Stress-controllable amorphous phase carbon film and preparation method thereof
By controlling the doping ratio of the deposition gas, stress-controllable amorphous carbon films are prepared using the PECVD method, which solves the problem of difficult stress control in amorphous carbon films, achieving stress controllability and modulus improvement, and is suitable for semiconductor processes.
CN122279518APending Publication Date: 2026-06-26PIOTECH (SHANGHAI) CO LTD
9 Cites 0 Cited by
Patent Information
- Application Number
- CN202411929311.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-24
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
In the prior art, the stress state of amorphous carbon thin films is difficult to control, leading to problems such as wafer warping and stress exceeding the controllable range when improving film performance.
Method used
By controlling the doping ratio of deposition gases such as C2-C4 alkynes, C2-C4 alkenes, and C1-C4 alkanes, amorphous carbon films can be deposited using the PECVD method, achieving controllable stress.
Benefits of technology
Amorphous carbon thin films with tensile stress, compressive stress, and neutral stress were obtained. The film stress was controlled within a certain range, the modulus was increased, the stress increase caused by high modulus was solved, and the process adjustment space was increased.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention belongs to the field of semiconductors, and particularly relates to a stress-controllable amorphous phase carbon film and a preparation method thereof. The stress of the amorphous phase carbon film ranges from-100 MPa to 100 MPa. The amorphous carbon film with specific tensile stress, compressive stress and neutral stress is obtained by controlling the doping ratio of deposition gases such as C2-C4 alkyne, C2-C4 olefin, C1-C4 alkane and the like under the condition of traditional PECVD film deposition. The preparation method for obtaining the stress-controllable amorphous phase carbon film through deposition gas doping is developed, the preparation method is simple, the process is stable and controllable, meanwhile, process adjusting parameters can be increased, and the preparation method is suitable for the manufacturing procedure with the high requirement for the stress state.
Need to check novelty before this filing date? Find Prior Art