Modeling method, modeling device, electronic device, and storage medium

Abstract

This application provides a modeling method, a modeling apparatus, an electronic device, and a storage medium; the modeling method includes: constructing a fourth model based on a first model, a second model, and a third model; the fourth model is used to predict the lifetime of an isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

Description

Technical Field

[0001] This application relates to the field of isotope power lifetime prediction technology, specifically to a modeling method, modeling device, electronic device, and storage medium. Background Technology

[0002] A radioisotope thermoelectric generator (RTG) is a device that converts the energy released by the decay of radioisotopes into electrical energy through thermoelectric conversion technology. It offers advantages such as compact structure, long lifespan, and maintenance-free operation. These advantages have led to widespread attention in many advanced research fields, such as deep space exploration and deep-sea exploration. RTGs generally require long-term operation, but due to their inherent characteristics, their output performance decreases with increasing service time, affecting the normal operation of the payload instruments. Therefore, assessing the lifespan of the RTG is essential to ensure a reliable power supply for missions. Summary of the Invention

[0003] This application provides a modeling method, a modeling apparatus, an electronic device, and a storage medium.

[0004] The modeling method provided in this application includes: Based on the first model, the second model, and the third model, a fourth model is constructed; the fourth model is used to predict the lifetime of the isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

[0005] The modeling apparatus provided in this application embodiment includes: Modeling unit: used to construct a fourth model based on the first model, the second model, and the third model; the fourth model is used to predict the lifetime of the isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

[0006] The electronic device provided in this application includes a processor and a memory. The memory is used to store computer programs, and the processor is used to call and run the computer programs stored in the memory to execute the modeling method provided in any embodiment of this application.

[0007] The storage medium provided in this application embodiment is used to store a computer program that causes a computer to execute the modeling method provided in any embodiment of this application.

[0008] The modeling method, modeling apparatus, electronic device, and storage medium provided in this application decompose the factors affecting the lifetime of isotopic power supplies into three parts: temperature difference attenuation, irradiation damage attenuation, and thermal aging attenuation, and establish corresponding mathematical models for each, thereby constructing a comprehensive prediction model. This decomposition method allows each attenuation mechanism to be modeled independently, facilitating parameter estimation and verification. Furthermore, using multiple sub-models for combined prediction can more accurately reflect the impact of complex coupled factors on power supply lifetime during actual service, improving the physical interpretability and prediction accuracy of the model. Attached Figure Description

[0009] Figure 1 A schematic diagram of the attenuation factors of RTG provided in the embodiments of this application; Figure 2 A schematic diagram illustrating the implementation process of the modeling method provided in this application embodiment; Figure 3 A schematic diagram illustrating the fourth and fifth relationships provided in the embodiments of this application; Figure 4 A schematic diagram of the sixth and seventh relationships provided for embodiments of this application; Figure 5 A schematic diagram of the ninth relationship provided for an embodiment of this application; Figure 6 A schematic diagram of the eighth relationship provided in the embodiments of this application; Figure 7 This is a schematic diagram of the modeling apparatus provided in the embodiments of this application; Figure 8 A schematic structural diagram of an electronic device provided in the embodiments of this application; Figure 9 This is a schematic structural diagram of the chip provided in an embodiment of this application. Detailed Implementation

[0010] The technical solutions of the embodiments of this application will now be described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0011] It should be noted that, in the embodiments of this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, in the embodiments of this application, the character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0012] In the description of the embodiments of this application, the term "correspondence" may indicate that there is a direct or indirect correspondence between two things, or that there is an association between two things, or that there is a relationship of instruction and being instructed, configuration and being configured, etc.

[0013] To facilitate understanding of the technical solutions of the embodiments of this application, the relevant technologies of the embodiments of this application are described below. The following relevant technologies are optional solutions and can be combined with the technical solutions of the embodiments of this application in any way, and they all fall within the protection scope of the embodiments of this application.

[0014] Lifetime assessment of isotope power supplies (RTGs) is typically conducted at the early stages of a mission. This requires a combination of understanding the power supply's lifespan degradation mechanism and analyzing test data to develop a reliable and effective evaluation method during the power supply development phase. However, due to the long lifespan of RTGs (generally exceeding 5 years), assessing their lifespan through normal operating condition experiments is time-consuming and impractical in engineering. Traditional RTG lifespan assessments often extrapolate the end-of-mission output from short-term operating data of RTG prototypes. However, the performance degradation mechanism of RTGs changes significantly in the early and late stages of service, with the degradation rate differing greatly between the early and mid-to-late stages. Extrapolation methods introduce substantial analytical errors. In recent years, with the continuous development of artificial intelligence and machine learning technologies, researchers have proposed using data-driven prediction methods based on machine learning to assess RTG lifespan. These methods do not require consideration of the RTG's intrinsic degradation mechanism; instead, they train the model using test data of various parameters during operation and then predict the RTG's operating status and output performance at the end of its lifespan. However, this method heavily relies on actual RTG test data and cannot meet the lifespan analysis needs of the RTG product development phase or the early stages of a mission.

[0015] like Figure 1 As shown, Figure 1 This is a schematic diagram of the attenuation factors of RTG provided in the embodiments of this application. The attenuation of the output performance of RTG system under service environment is essentially the attenuation of the performance of thermoelectric conversion device. The specific attenuation factors can be divided into the thermal power attenuation of radioactive isotope heat source (RHU) and the performance attenuation of thermoelectric conversion device (DD). The DD performance attenuation can be further divided into irradiation attenuation and high temperature attenuation.

[0016] Heat source power decay refers to the reduction in heat generated by the remaining fuel due to radioactive nuclear fuel decay, resulting in decreased input heat flow to thermoelectric devices, a smaller temperature difference ΔT across the thermoelectric device's conversion material, reduced thermal insulation efficiency of the insulation material, and changes in the integral function of the thermoelectric converter's ZT value. These combined factors cause the RTG's output power to gradually decrease.

[0017] Device irradiation attenuation refers to the irradiation damage to thermoelectric device materials caused by radiation (such as gamma rays, neutrons, etc.) generated by the RHU, resulting in device performance degradation and a decrease in the output performance of the RTG system.

[0018] High-temperature thermal aging degradation of devices refers to the reduction in the performance of thermoelectric devices due to chemical reactions occurring inside the devices under high-temperature conditions, resulting in a decrease in the output performance of the RTG system.

[0019] In the modeling process, the three attenuation factors mentioned above are considered to be independent of each other.

[0020] refer to Figure 2 , Figure 2 This is a schematic diagram illustrating the implementation process of the modeling method provided in the embodiments of this application, such as... Figure 2 As shown, the modeling method provided in this application embodiment includes the following steps: Step 101: Based on the first model, the second model, and the third model, construct a fourth model; the fourth model is used to predict the lifetime of the isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

[0021] The first model is a mathematical model characterizing the impact of reduced thermal power due to radioactive nuclear fuel decay on the performance of isotope power sources. Specifically, the first model describes the gradual decrease in thermal power of the heat source as service time increases, thus indirectly affecting the output power of the power source. The first model is established based on the physical law of thermoelectric conversion efficiency changing with temperature difference, and belongs to a typical exponential decay model.

[0022] The second model is a mathematical model that characterizes the decline in output performance caused by radiation damage to the materials of thermoelectric devices. The second model takes into account the structural damage and performance degradation that occur in devices under long-term radiation exposure.

[0023] The third model refers to a mathematical model that characterizes the decline in output performance caused by thermal aging of device materials due to high-temperature environments. The third model reflects the performance degradation caused by chemical reactions, oxidation, sublimation, and other processes that occur in materials under long-term high-temperature conditions.

[0024] The fourth model is a power supply lifetime prediction model constructed by comprehensively building upon the three independent attenuation mechanisms mentioned above. The expression for the fourth model is: In other words, the fourth model couples the effects of three attenuation factors simultaneously, thereby enabling full-lifecycle prediction of the RTG system's output power. The fourth model not only considers the impact of a single factor on power supply performance but also the nonlinear superposition effect of multiple factors, thus improving prediction accuracy. For example, during the mid-service phase, due to the combined effects of irradiation and thermal aging, the device performance degradation rate accelerates significantly. During this phase, the fourth model accurately reflects the trend of significantly accelerated device performance degradation, avoiding errors introduced by traditional extrapolation methods.

[0025] In practical implementation, by introducing a multi-factor coupled modeling method, this application can effectively solve the prediction bias problem caused by model simplification or insufficient data in traditional methods, and achieve high-precision prediction of isotope power source lifetime.

[0026] In this embodiment of the application, the modeling method further includes: Based on the first relationship, the device temperature difference decay ratio function is determined; the first relationship characterizes the relationship between the temperature difference decay rate and the remaining amount of heat source material in the isotope power source; based on the temperature difference decay ratio function, the first model is constructed. Based on the second relationship, the device irradiation damage attenuation ratio function is determined; the second relationship characterizes the relationship between the irradiation damage of the device material and the cumulative irradiation dose of the material; based on the device irradiation damage attenuation ratio function, the second model is constructed. Based on the third relationship, the thermal aging decay ratio function of the device material is determined; the third relationship characterizes the relationship between the thermal aging decay rate of the device material and the output power; based on the thermal aging decay ratio function of the device material, the third model is constructed.

[0027] In this embodiment, the first relationship characterizes the relationship between the temperature difference decay rate and the remaining amount of heat source material in the isotopic power source. The temperature difference decay rate is proportional to the RTG output power and satisfies the first-order decay rate equation: , The temperature difference decay ratio function, ;in, Let be the thermal power attenuation coefficient. The expression for the first model is: ,in, The initial power is given. The temperature difference decay ratio function reflects the decreasing trend of thermoelectric conversion efficiency in the RTG system due to the decay of heat source material over time. The constructed first model can be used to separately evaluate the output power decrease caused by changes in the remaining amount of heat source material, thus providing basic parameters for subsequent integrated models.

[0028] In this embodiment, the second relationship characterizes the relationship between the irradiation damage to the device material and the cumulative irradiation dose to the material. The irradiation damage to the device material is proportional to the cumulative irradiation dose to the material, and the RTG output power attenuation caused by irradiation damage is proportional to the output power, satisfying the first-order attenuation rate equation. , Let be the irradiation attenuation ratio function. ;in, Let be the radiation damage attenuation coefficient of the device material. The expression for the second model is: The device irradiation damage attenuation ratio function can simulate the performance degradation process of device materials due to the cumulative increase in irradiation dose under long-term service conditions. The second model can be used to separately evaluate the impact of irradiation factors on RTG output performance and provide key inputs for the final lifetime prediction model.

[0029] In this embodiment, the thermal aging of the device material is a complex decay process composed of multiple aging factors, including sublimation of thermoelectric materials, decrease in the ZT value of thermoelectric materials, and aging of the device connection interface. The third relationship characterizes the relationship between the thermal aging decay rate of the device material and the output power. The thermal aging decay rate of the device material is proportional to the nth power of the output power (n≠1), expressed as: , ;in, Let n be the thermal aging degradation coefficient of the device material, and n be the degradation order; let ,but The expression for the third model is: ,in This represents the thermal aging degradation proportionality function. The thermal aging degradation proportionality function of the device material can accurately describe the performance degradation trend caused by thermal aging at different service temperatures. The third model is used to separately evaluate the impact of thermal aging on output power, thereby further improving the overall lifetime prediction model. Based on this, in one optional embodiment of this application, The temperature difference attenuation ratio function is: ;in, The thermal power attenuation coefficient; The radiation damage attenuation ratio function of the device is: ;in, The radiation damage attenuation coefficient of the device material; The thermal aging degradation ratio function of the device material is: ;in, denoted as the thermal aging degradation coefficient of the device material, and n is the degradation order.

[0030] The fourth model can be represented as .

[0031] In this embodiment, a first model, a second model, and a third model are constructed to correspond to three independent attenuation mechanisms: temperature difference attenuation, irradiation damage, and thermal aging, respectively. By constructing the first, second, and third models, the complex multi-factor attenuation problem can be decomposed into multiple single-factor models, which facilitates experimental data fitting and parameter estimation. This allows for more accurate prediction of the full-lifetime output performance of the isotope power supply, thereby improving the reliability and mission assurance capabilities of the power supply system.

[0032] In this embodiment, an exponential function is used to describe the temperature difference decay and irradiation damage decay process, which can effectively fit the nonlinear performance degradation trend in actual service. Introducing the decay order n to describe the thermal aging process enhances the model's adaptability to complex chemical reactions and material degradation behavior, thereby improving the model's versatility and applicability.

[0033] In this embodiment of the application, the modeling method further includes: Based on multiple preset heating power thresholds and radioactive decay equations, a fourth relationship is determined; the fourth relationship characterizes the relationship between the decay time and heating power of the isotopic heat source. Based on the fourth relationship, a fifth relationship is determined using a simulated prototype of the isotope power supply; the fifth relationship characterizes the relationship between the decay time and the output power of the simulated prototype. The thermal power attenuation coefficient is determined based on the temperature difference attenuation ratio function and the fifth relationship.

[0034] In this embodiment of the application, based on the structure of the isotope power supply product, an electric thermoelectric generator (ETG) is prepared. By controlling the electric input power of the electric thermoelectric generator, the thermal output state of the isotope heat source at different service periods is simulated.

[0035] The steps are as follows: 1) Select multiple preset RHU heating power thresholds According to the radioactive decay equation ( It is the decay constant. (This refers to the initial design thermal power of the heat source), and the "degradation time - thermal power" data for RHUs with different service years are calculated: That is, the fourth relation; 2) Based on the RHU's "decay time - thermal power" data, set the thermal power of the ETG's heat source. Once the ETG system reaches thermal equilibrium, measure the ETG's output power to obtain the "decay time - output power" data: That is, the fifth relationship; reference Figure 3 , Figure 3This is a schematic diagram of the fourth and fifth relationships provided in the embodiments of this application.

[0036] 3) Based on the logarithmic linearization characteristics of the first model, the least squares linear regression method is used to estimate and determine the heat power attenuation coefficient. .

[0037] In this embodiment, an electrical simulation prototype is used to replace the nuclear heat source for the experiment, avoiding the risks of handling radioactive materials and significantly shortening the experimental cycle. Simultaneously, the actual output power data obtained through the simulation prototype can be used to invert the thermal power attenuation coefficient, thereby improving the reliability of the model parameters.

[0038] In this embodiment of the application, the parameter estimation method further includes: A sixth relationship was obtained by conducting multiple irradiation tests on thermoelectric conversion devices; the sixth relationship characterizes the relationship between irradiation time and cumulative irradiation dose. The output power of the thermoelectric conversion device was tested after multiple irradiation tests, and the seventh relationship was obtained; the seventh relationship characterizes the relationship between irradiation time and the output power of the thermoelectric device. Based on the sixth relation, the seventh relation, and the device irradiation damage attenuation ratio function, the irradiation damage attenuation coefficient of the device material is determined.

[0039] In this embodiment, the radiation damage attenuation coefficient of the device material is estimated through accelerated irradiation testing. Accelerated irradiation testing increases the irradiation dose rate and intensity, simulating the performance degradation process of the device under long-term actual irradiation conditions in a short time. A suitable irradiation source is selected based on the type of radiation from the RHU, and the acceleration factor N (the ratio of the experimental dose rate to the actual irradiation dose rate) is determined. Simultaneously, it is necessary to avoid deviations from the failure mechanism due to excessive acceleration (e.g., excessively high dose rates may induce unnatural degradation of the material).

[0040] The radiation dose rate of normally in-service devices is: ;in, It is the decay constant; the irradiation dose rate of the device during accelerated irradiation testing using an N-fold acceleration factor is: Integrating over time yields the cumulative radiation dose received during normal operation of the device. The cumulative irradiation dose of the device when irradiated using an N-fold acceleration factor: .

[0041] The steps are as follows: 1) The initial radiation dose rate of the internal thermoelectric components of the RTG under service environment was obtained by means of actual measurement or Monte Carlo modeling calculation. The accelerated irradiation dose rate is ; 2) Based on the principle that the attenuation of device output power is proportional to the total irradiation dose, multiple device cumulative dose thresholds were selected for accelerated testing. According to the formula and formula The "irradiation time - cumulative dose" data for normal service and accelerated testing were calculated as follows: That is, the sixth relation; 3) Conduct multiple accelerated irradiation experiments based on the accelerated irradiation “irradiation time-cumulative dose” data, with different irradiation times for different groups.

[0042] 4) After the accelerated irradiation test, the output power of each group of irradiated thermoelectric devices was tested under normal device service temperature conditions to obtain the "irradiation time-output power" data for normal service and accelerated testing. That is, the seventh relation; such as Figure 4 As shown, Figure 4 A schematic diagram illustrating the sixth and seventh relationships provided in the embodiments of this application; 5) Based on the log-linearization characteristics of the second model, the least squares linear regression method is used to estimate and determine the optimal irradiance attenuation coefficient k2 of the model.

[0043] In this embodiment, device performance data under different irradiation conditions are obtained through accelerated irradiation tests, and parameter estimation is performed by combining the irradiation damage attenuation ratio function. This enables the rapid acquisition of key model parameters without relying on long-term natural irradiation tests, significantly improving the efficiency and feasibility of parameter estimation.

[0044] In this embodiment of the application, the modeling method further includes: An accelerated lifetime model is constructed using the Arrhenius model; the accelerated lifetime model characterizes the effect of temperature stress on device lifetime; the device lifetime is the time it takes for the output power of the thermoelectric conversion device to decay to a preset power. Based on the accelerated lifetime model, an eighth relationship is obtained; the eighth relationship characterizes the relationship between the device lifetime and output power of the isotope power supply at a first temperature; the first temperature is the normal service temperature of the isotope power supply. Based on the thermal aging decay ratio function of the device material and the eighth relationship, the thermal aging decay coefficient and the decay order of the device material are determined.

[0045] In this embodiment of the application, extrapolation based on the accelerated lifetime model yields the "lifetime-output power" data of the device under normal service temperature stress T0: This refers to the eighth relationship, which, based on the third model, uses nonlinear regression to fit the "lifetime-output power" data. ,get From parameters a and b, the thermal aging degradation coefficient of the device material can be further obtained. And the decay order n.

[0046] In this embodiment of the application, the construction of the accelerated lifespan model using the Arrhenius model includes: The accelerated lifespan model is obtained by taking the logarithm of both sides of the equation of the Arrhenius model; wherein, the Arrhenius model is... ,in, For device lifetime; A is the prefactor, a constant characterizing the device product characteristics; E is the activation energy; K is the Boltzmann constant; T is the temperature stress. Based on multiple preset output power thresholds, life test experiments were conducted at different high temperature stress points to obtain multiple sets of ninth relationships; the ninth relationship characterizes the relationship between the device life and temperature stress. Based on the multiple sets of ninth relationships and the accelerated lifetime model, the values ​​of A, E, and K are determined.

[0047] In this embodiment, temperature is used as the accelerating stress, denoted by the symbol T. Increasing the device operating temperature accelerates the internal chemical reaction rate of the device, thereby increasing the thermal aging rate of the device material. The relationship between device lifetime and temperature stress is represented by the Arrhenius model: Taking the logarithm of both sides yields the accelerated life model. ,in, , .

[0048] The accelerated life test procedure is as follows: 1) Select multiple high-temperature stress points The selection of high-temperature stress points should be higher than the normal service temperature of the device, and should cover the temperature range in which the device's thermal aging is significantly accelerated but no new failure mechanism is introduced.

[0049] 2) Select multiple output power thresholds .

[0050] 3) Conduct high-temperature stress tests simultaneously using multiple groups. Under operating conditions, the device lifespan assessment test monitors the device's output power in real time. When the device's output power decays to a set threshold Pj, a set of "temperature-lifespan" data can be obtained. When the device output power decays to the last set threshold, a total of j sets of "temperature-lifetime" data are obtained. That is, the ninth relation, such as Figure 5 The above, Figure 5 This is a schematic diagram of the ninth relationship provided in the embodiments of this application. Figure 5 The multiple hollow points in the data are data points.

[0051] 4) In In the plane, based on the log-linearization characteristics of the accelerated life model, the number of life tests in each group is estimated by linear fitting using the least squares method to obtain the accelerated life model parameters c and d, and the values ​​of A, E and K can be obtained.

[0052] refer to Figure 6 , Figure 6 A schematic diagram of the eighth relationship provided in the embodiments of this application, as shown below. Figure 6 As shown, Figure 6 The decay curves of device lifetime under different high-temperature stresses are shown. The dashed line represents the decay curve of device lifetime at normal service temperature.

[0053] In this embodiment, the impact of temperature stress on device lifetime is quantified using the Arrenness model, and parameter estimation is performed by combining high-temperature accelerated life test data, which can effectively improve the accuracy of the thermal aging degradation model. Simultaneously, this method avoids the limitations of conventional long-cycle life tests and is suitable for early lifetime prediction needs during the RTG development phase. By obtaining device lifetime data at different temperatures through high-temperature accelerated testing and performing regression analysis using a logarithmic Arrenness model, key parameters in the model, such as the pre-factor A and activation energy E, can be accurately estimated, thereby improving the predictive and generalization capabilities of the thermal aging model.

[0054] The modeling method provided in this application greatly simplifies the model complexity by summarizing the power attenuation process into three independent attenuation factors, thus providing a clear framework for subsequent research. It replaces normal service testing with accelerated evaluation methods, such as using an electrical simulated heat source instead of a nuclear heat source, and conducting accelerated irradiation and high-temperature life tests. This effectively reduces testing costs, avoids the risks of handling radioactive materials, and significantly shortens the testing cycle and simplifies the testing process. Furthermore, the model is built based on actual RTG full-life test data, significantly improving reliability. Moreover, parameter estimation does not depend on actual prototype data, enabling full-life-cycle output performance prediction during the development phase, thus powerfully promoting the research and application of RTG technology.

[0055] This application also provides a modeling apparatus, with reference to... Figure 7 , Figure 7 This is a schematic diagram of the modeling apparatus provided in an embodiment of this application. The modeling apparatus in this embodiment includes: Modeling unit: used to construct a fourth model based on the first model, the second model, and the third model; the fourth model is used to predict the lifetime of the isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

[0056] In this embodiment, the modeling unit is used to: determine a device temperature difference decay ratio function based on a first relationship; the first relationship characterizes the relationship between the temperature difference decay rate and the remaining amount of heat source material in the isotope power supply; construct a first model based on the temperature difference decay ratio function; determine a device irradiation damage decay ratio function based on a second relationship; the second relationship characterizes the relationship between irradiation damage to the device material and the cumulative irradiation dose of the material; construct a second model based on the device irradiation damage decay ratio function; determine a device material thermal aging decay ratio function based on a third relationship; the third relationship characterizes the relationship between the device material thermal aging decay rate and the output power; construct a third model based on the device material thermal aging decay ratio function.

[0057] In this embodiment of the application, the temperature difference attenuation ratio function is: ;in, The thermal power attenuation coefficient is given by the device irradiation damage attenuation ratio function. ;in, The radiation damage attenuation coefficient of the device material is given by the thermal aging attenuation ratio function of the device material. ;in, denoted as the thermal aging degradation coefficient of the device material, and n is the degradation order.

[0058] In this embodiment of the application, the modeling unit is used to: determine a fourth relationship based on multiple preset heating power thresholds and radioactive decay equations; the fourth relationship characterizes the relationship between the decay time and heating power of the isotope heat source; based on the fourth relationship, determine a fifth relationship through a simulated prototype of the isotope power source; the fifth relationship characterizes the relationship between the decay time and output power of the simulated prototype; and determine the heating power decay coefficient based on the temperature difference decay ratio function and the fifth relationship.

[0059] In this embodiment of the application, the modeling unit is used to: obtain a sixth relationship by conducting multiple irradiation tests on the thermoelectric conversion device; the sixth relationship characterizes the relationship between irradiation time and cumulative irradiation dose; test the output power of the thermoelectric conversion device after multiple irradiation tests to obtain a seventh relationship; the seventh relationship characterizes the relationship between irradiation time and output power of the thermoelectric conversion device; and determine the irradiation damage attenuation coefficient of the device material based on the sixth relationship, the seventh relationship, and the device irradiation damage attenuation ratio function.

[0060] In this embodiment of the application, the modeling unit is used to construct an accelerated lifetime model using the Arrhenius model; the accelerated lifetime model characterizes the effect of temperature stress on device lifetime; the device lifetime is the time it takes for the output power of the thermoelectric conversion device to decay to a preset power. Based on the accelerated lifetime model, an eighth relationship is obtained; the eighth relationship characterizes the relationship between the device lifetime and output power of the isotope power supply at a first temperature; the first temperature is the normal service temperature of the isotope power supply; based on the thermal aging decay ratio function of the device material and the eighth relationship, the thermal aging decay coefficient and decay order of the device material are determined.

[0061] In this embodiment of the application, the modeling unit is used to obtain the accelerated lifespan model by taking the logarithm of both sides of the equation of the Arrhenius model; wherein, the Arrhenius model is... ,in, A is the device lifetime; A is the prefactor, a constant characterizing the device product characteristics; E is the activation energy; K is the Boltzmann constant; T is the temperature stress. Based on multiple preset output power thresholds, lifetime assessment tests are conducted at different high-temperature stress points to obtain multiple sets of ninth relationships; the ninth relationship characterizes the relationship between the device lifetime and temperature stress; based on the multiple sets of ninth relationships and the accelerated lifetime model, the values ​​of A, E, and K are determined.

[0062] Those skilled in the art should understand that Figure 7 The functions of each unit in the modeling device shown can be understood by referring to the relevant descriptions of the aforementioned methods. Figure 7 The functions of each unit in the modeling device shown can be implemented by a program running on a processor or by specific logic circuits.

[0063] Figure 8 This is a schematic structural diagram of an electronic device provided in an embodiment of this application. Figure 8 The electronic device shown includes a processor 810, which can call and run computer programs from memory to implement the modeling method provided in the embodiments of this application.

[0064] Optionally, such as Figure 8 As shown, the electronic device may also include a memory 820. The processor 810 can retrieve and run computer programs from the memory 820 to implement the modeling method provided in the embodiments of this application.

[0065] The memory 820 can be a separate device independent of the processor 810, or it can be integrated into the processor 810.

[0066] Optionally, such as Figure 8 As shown, the electronic device may also include a transceiver 830, which the processor 810 can control to communicate with other devices. Specifically, it can send information or data to other devices or receive information or data sent by other devices.

[0067] The transceiver 830 may include a transmitter and a receiver. The transceiver 830 may further include an antenna, and the number of antennas may be one or more.

[0068] The electronic device can implement the corresponding processes implemented by the modeling device in the various methods of the embodiments of this application, which will not be described in detail here for the sake of brevity.

[0069] For example, embodiments of this application also provide a computer program product, including a computer program that can be executed by a processor 810 of an electronic device to perform the steps described in any of the foregoing methods.

[0070] Figure 9 This is a schematic structural diagram of the chip according to an embodiment of this application. Figure 9 The chip shown includes a processor 910, which can call and run computer programs from memory to implement the methods in the embodiments of this application.

[0071] Optionally, such as Figure 9 As shown, the chip may also include a memory 920. The processor 910 can retrieve and run computer programs from the memory 920 to implement the methods described in this embodiment.

[0072] The memory 920 can be a separate device independent of the processor 910, or it can be integrated into the processor 910.

[0073] Optionally, the chip may also include an input interface 930. The processor 910 can control the input interface 930 to communicate with other devices or chips; specifically, it can acquire information or data sent by other devices or chips.

[0074] Optionally, the chip may also include an output interface 940. The processor 910 can control the output interface 940 to communicate with other devices or chips, specifically, to output information or data to other devices or chips.

[0075] This chip can be applied to the electronic devices in the embodiments of this application, and the chip can implement the corresponding processes implemented by the electronic devices in the various methods of the embodiments of this application. For the sake of brevity, it will not be described in detail here.

[0076] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a system-on-a-chip, system chip, chip system, or system-on-a-chip, etc.

[0077] It should be understood that the processor in the embodiments of this application may be an integrated circuit chip with signal processing capabilities. In implementation, the steps of the above method embodiments can be completed by integrated logic circuits in the processor's hardware or by instructions in software form. The processor described above can be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of this application can be directly embodied in the execution of a hardware decoding processor, or executed by a combination of hardware and software units in the decoding processor. The software units can be located in random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, registers, or other mature storage media in the art. The storage medium is located in memory, and the processor reads information from the memory and, in conjunction with its hardware, completes the steps of the above method.

[0078] It is understood that the memory in the embodiments of this application can be volatile memory or non-volatile memory, or may include both volatile and non-volatile memory. The non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. The volatile memory can be random access memory (RAM), which is used as an external cache. By way of example, but not limitation, many forms of RAM are available, such as Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Enhanced Synchronous DRAM (ESDRAM), Synchlink DRAM (SLDRAM), and Direct Rambus RAM (DR RAM). It should be noted that the memory used in the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

[0079] It should be understood that the above-described memory is exemplary and not a limiting description. For example, the memory in the embodiments of this application may also be static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), and direct memory bus RAM (DR RAM), etc. That is to say, the memory in the embodiments of this application is intended to include, but is not limited to, these and any other suitable types of memory.

[0080] This application also provides a storage medium for storing a computer program. This storage medium can be applied to the electronic device in this application embodiment, and the computer program causes the computer to execute the corresponding processes implemented by the electronic device in the various methods of this application embodiment; for brevity, these will not be elaborated further here.

[0081] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0082] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0083] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0084] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0085] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0086] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or electronic device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0087] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for predicting the lifetime of an isotope power source, characterized in that, include: Based on the first model, the second model, and the third model, a fourth model is constructed; the fourth model is used to predict the lifetime of the isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

2. The method according to claim 2, characterized in that, The method further includes: Based on the first relationship, the device temperature difference decay ratio function is determined; the first relationship characterizes the relationship between the temperature difference decay rate and the remaining amount of heat source material in the isotope power source; based on the temperature difference decay ratio function, the first model is constructed. Based on the second relationship, the device irradiation damage attenuation ratio function is determined; the second relationship characterizes the relationship between the irradiation damage of the device material and the cumulative irradiation dose of the material; based on the device irradiation damage attenuation ratio function, the second model is constructed. Based on the third relationship, the thermal aging decay ratio function of the device material is determined; the third relationship characterizes the relationship between the thermal aging decay rate of the device material and the output power; based on the thermal aging decay ratio function of the device material, the third model is constructed.

3. The method according to claim 2, characterized in that, include: The temperature difference attenuation ratio function is: ;in, The thermal power attenuation coefficient; The radiation damage attenuation ratio function of the device is: ;in, The radiation damage attenuation coefficient of the device material; The thermal aging degradation ratio function of the device material is: ;in, denoted as the thermal aging degradation coefficient of the device material, and n is the degradation order.

4. The method according to claim 3, characterized in that, Also includes: The fourth relationship is determined based on multiple preset heating power thresholds and radioactive decay equations; The fourth relationship characterizes the relationship between the decay time and thermal power of the isotopic heat source. Based on the fourth relationship, the fifth relationship is determined using a simulated prototype of the isotope power source; The fifth relationship characterizes the relationship between the decay time and output power of the simulated prototype; The thermal power attenuation coefficient is determined based on the temperature difference attenuation ratio function and the fifth relationship.

5. The method according to claim 3, characterized in that, include: The sixth relationship was obtained by conducting multiple irradiation tests on thermoelectric conversion devices; The sixth relationship characterizes the relationship between irradiation time and cumulative irradiation dose; The output power of the thermoelectric conversion device was tested after multiple irradiation tests, and the seventh relationship was obtained. The seventh relationship characterizes the relationship between irradiation time and the output power of the thermoelectric conversion device; Based on the seventh relationship and the device irradiation damage attenuation ratio function, the irradiation damage attenuation coefficient of the device material is determined.

6. The method according to claim 3, characterized in that, Also includes: An accelerated lifetime model was constructed using the Arrhenius model; the accelerated lifetime model characterizes the effect of temperature stress on device lifetime. The device lifetime is the time it takes for the output power of the thermoelectric conversion device to decay to a preset power. Based on the accelerated lifetime model, the eighth relationship is obtained; The eighth relationship characterizes the relationship between the device lifetime and output power of the isotope power supply at the first temperature; The first temperature is the normal operating temperature of the isotope power supply; Based on the thermal aging decay ratio function of the device material and the eighth relationship, the thermal aging decay coefficient and the decay order of the device material are determined.

7. The method according to claim 6, characterized in that, The construction of the accelerated lifespan model using the Arrennis model includes: The accelerated lifespan model is obtained by taking the logarithm of both sides of the equation of the Arrhenius model; wherein, the Arrhenius model is... ,in, For device lifetime; A is the prefactor, a constant characterizing the device product characteristics; E is the activation energy; K is the Boltzmann constant; T is the temperature stress. Based on multiple preset output power thresholds, life test experiments were conducted at different high temperature stress points to obtain multiple sets of ninth relationships; the ninth relationship characterizes the relationship between the device life and temperature stress. Based on the multiple sets of ninth relationships and the accelerated lifetime model, the values ​​of A, E, and K are determined.

8. A modeling apparatus, characterized in that, include: Modeling unit: used to construct a fourth model based on the first model, the second model, and the third model; the fourth model is used to predict the lifetime of the isotope power source; wherein, the first model characterizes the effect of device temperature difference decay on the lifetime of the isotope power source; the second model characterizes the effect of device material irradiation damage decay on the lifetime of the isotope power source; and the third model characterizes the effect of device material thermal aging on the lifetime of the isotope power source.

9. An electronic device, characterized in that, include: A processor and a memory, the memory for storing a computer program, the processor for calling and running the computer program stored in the memory to perform the modeling method as described in any one of claims 1 to 7.

10. A storage medium, characterized in that, Used to store computer programs that cause a computer to perform the modeling method as described in any one of claims 1 to 7.

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