Magnesium hydrogen co-doped indium zinc oxide thin film transistor based on co-sputtering technology and preparation method of magnesium hydrogen co-doped indium zinc oxide thin film transistor

The fabrication of magnesium-hydrogen co-doped indium zinc oxide thin-film transistors by co-sputtering technology has solved the problems of low mobility in amorphous silicon thin films and high cost in polycrystalline silicon thin films, achieving high carrier mobility and stability, reducing fabrication costs, and optimizing the performance of oxide thin-film transistors.

CN122373420APending Publication Date: 2026-07-10XINJIANG UNIVERSITY
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Patent Information

Application Number
CN202610513652.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-17
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In existing technologies, amorphous silicon thin-film transistors have low mobility and unstable illumination, while polycrystalline silicon thin-film transistors have high manufacturing costs and are not conducive to large-scale promotion. Traditional single-target magnetron sputtering methods are costly and difficult to precisely control the element doping ratio, resulting in poor performance of oxide thin-film transistor devices.

Method used

Magnesium-hydrogen co-doped indium zinc oxide thin film transistors were fabricated using co-sputtering technology. By combining radio frequency magnetron sputtering and DC sputtering, the oxygen vacancy concentration and carrier concentration were controlled, and hydrogen plasma treatment was used to optimize the device interface states, thereby achieving high carrier mobility and stability.

Benefits of technology

It achieves high carrier mobility and excellent operational stability, reduces fabrication costs, simplifies the process flow, and improves the electrical performance and stability of thin-film transistors.

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Abstract

The invention provides a low-cost and high-efficiency magnesium-hydrogen co-doped indium zinc oxide thin film transistor with a co-sputtering technology and a preparation method of the magnesium-hydrogen co-doped indium zinc oxide thin film transistor. The device is specifically prepared as follows: heavily doped N-type silicon and silicon dioxide are taken as a grid electrode and an insulating layer is taken as a substrate, a double-target co-sputtering method is adopted to deposit an indium zinc oxide magnesium-doped semiconductor channel layer, hydrogen plasma treatment is carried out, direct current sputtering deposition aluminum is taken as an electrode, patterning is carried out on the deposition by using a mask plate, and the device is prepared. And finally, the high-performance magnesium-hydrogen co-doped indium zinc oxide thin film transistor is developed. Magnesium is doped with indium zinc oxide at a proper atomic concentration through double-target co-sputtering to improve the defects and control the oxygen vacancy concentration, and the interface defect state and the carrier transport characteristic of the device are regulated and controlled through hydrogen plasma treatment, so that the preparation process has the advantages of high efficiency, low cost and the like; the obtained device has relatively high carrier mobility and shows good stability, and technical reference is provided for optimizing a low-cost and high-efficiency new co-doping process.
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