Perovskite solar cell and preparation method thereof, photovoltaic module

Abstract

This application relates to the field of solar cell technology, and more particularly to a perovskite solar cell and its fabrication method, as well as a photovoltaic module. The fabrication method of the perovskite solar cell includes: a first carrier transport layer disposed on a surface of a conductive substrate; forming a perovskite thin film by depositing a perovskite precursor solution on the surface of the first carrier transport layer; during the film formation process, a protective gas is introduced into the environment, the gas flow of which forms an acute angle with the surface of the first carrier transport layer. This protective gas protects the environmental atmosphere during the perovskite thin film fabrication process, accelerates the evaporation of volatile solvents, reduces organic solvent residue, and forms a continuous and uniformly thick large-area perovskite thin film, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell device and promoting the industrialization of perovskite solar cells.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to a perovskite solar cell and its preparation method, as well as a photovoltaic module. Background Technology

[0002] Organic-inorganic hybrid perovskite materials possess advantages such as high absorption coefficients, tunable band gaps, long carrier diffusion lengths, and high defect tolerance. Furthermore, they offer advantages like simple fabrication processes and low manufacturing costs, making perovskite materials considered the most commercially viable new material in the photovoltaic market in recent years. After only a decade or so of research, single-junction perovskite solar cells have achieved high photoelectric conversion efficiencies, surpassing commercially available cadmium telluride and copper indium gallium selenide (CIGS) cells and approaching the 26.7% photoelectric conversion efficiency of mainstream crystalline silicon solar cells. Perovskite tandem solar cells combine high efficiency and low cost, and are considered one of the technologies with the potential for large-scale ground-mounted photovoltaic applications. With their outstanding advantages of high efficiency, low cost, and simple fabrication processes, perovskite tandem solar cells have gradually become a hot topic in global photovoltaic research in recent years. In the process of industrialization, the ability to rapidly fabricate large-area, uniformly thick, high-quality perovskite thin films is crucial. Currently, large-area perovskite thin film fabrication mainly employs slot coating technology, although inkjet printing and electrostatic spraying methods are also used to fabricate large-area perovskite thin films.

[0003] When preparing perovskite thin films using slit coating technology, the film thickness depends on the amount of liquid on the substrate. There is a significant difference in the amount of liquid at the recessed areas of the slit coating compared to the raised areas; the recessed areas have more liquid, resulting in a thicker film, while the raised areas have less liquid, resulting in a thinner perovskite film. Furthermore, the distance between the slit coating tip and the sample surface is approximately 100 μm, and a deviation of about 10-20 μm from the substrate can cause a thickness deviation of about 10% in the perovskite film, severely affecting the stability of the perovskite solar cell in subsequent operation. The edges of the slit coating also experience variations due to the three-phase interaction of the different liquid phases. The uniformity of the perovskite film at the edge is fundamentally different from that at the center. Poor quality of the perovskite film at the edge affects the efficiency and stability of the device. In order to make the organic solvent in the perovskite precursor solution evaporate quickly and reduce the solvent residue in the perovskite, the slot coating technology is to spread the solution on the surface to form a liquid film, and then evaporate the solvent by air knife or vacuum. This process usually starts the air knife operation or vacuum operation only after the solution has been fully spread. The air knife operation in the process will disrupt the fluid state of the liquid surface, resulting in surface mottled film and significantly damaging the uniformity of the film.

[0004] When preparing perovskite thin films using inkjet printing and electrostatic spraying technologies, nitrogen gas flow can be directly introduced during the spraying process to assist in the solvent evaporation of perovskite droplets. Whether it is electrostatic spraying or inkjet printing, the droplets reach the sample surface with a high initial velocity. Electrostatic spraying achieves high speed through the acceleration of charged droplets in an electric field, while inkjet printing uses piezoelectric ceramics to control the nozzle to apply instantaneous high pressure to accelerate the liquid towards the substrate surface. The droplet size of both methods is very small, ranging from 1 to 3 μm, and the velocity is fast. After the droplets reach the substrate, they reach a quasi-dry state and cannot continue to flow like a fluid. Excessive pre-drying may cause the perovskite droplets to fail to completely fuse, forming discrete granular films instead of continuous film layers.

[0005] Therefore, the main technical problem that needs to be solved is to provide a method for preparing large-area perovskite thin films with continuity and uniform thickness.

[0006] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the Invention

[0007] This application provides perovskite solar cells and their fabrication methods, as well as photovoltaic modules, to solve the technical problem of poor perovskite film quality when fabricating large-area perovskite thin films.

[0008] The first aspect of this application provides a method for fabricating a perovskite solar cell, comprising the following steps:

[0009] A conductive substrate is provided, wherein a first carrier transport layer is disposed on one surface of the conductive substrate; A perovskite precursor solution is deposited on the surface of the first carrier transport layer away from the conductive substrate to form a perovskite thin film; the perovskite thin film is then annealed to form a perovskite absorber layer. During the film-forming process, a protective gas is introduced into the environment from the perovskite precursor solution, and the gas flow of the protective gas forms an acute angle with the surface of the first carrier transport layer.

[0010] The perovskite precursor solution provided in this application provides a protective gas that is introduced into the environment during the deposition process. The gas flow of the protective gas forms an acute angle with the surface of the first carrier transport layer. This protective gas flow protects the environment during the perovskite thin film preparation process, accelerates the evaporation of volatile solvents, and reduces organic solvent residues. The acute angle between the gas flow and the surface of the first carrier transport layer allows the gas flow direction to form an angle with the first carrier transport layer, enabling perovskite droplets to fall vertically onto the surface of the first carrier transport layer. This results in the formation of a continuous and uniformly thick large-area perovskite thin film, improving the photoelectric conversion efficiency and stability of perovskite solar cell devices and promoting the industrialization of perovskite solar cells.

[0011] Optionally, the perovskite film is dried at 100-130°C for 20-60 seconds and then annealed to obtain a perovskite absorber layer.

[0012] The perovskite film provided in this application embodiment is dried at 100-130°C for 20-60 seconds, which can remove residual solvent in time and prevent the perovskite film containing solvent from being damaged by moisture.

[0013] Optionally, the temperature of the protective gas is 50-70°C, and the pressure of the protective gas is 0.1-0.5 MPa.

[0014] The protective gas provided in this application embodiment has a temperature of 50-70℃ and a pressure of 0.1-0.5MPa, which can precisely control the temperature of the preparation environment. When the protective gas pressure is 0.1-0.5MPa, it can avoid the problem of charged droplet trajectory deviation caused by excessive airflow, and also avoid the problem of uneven thickness caused by insufficient airflow intensity, slow solvent evaporation rate, and easy droplet flow. The combination of temperature and pressure of the protective gas can assist the evaporation of solvent in the perovskite precursor solution and the perovskite film crystallization process, realizing the evaporation of volatile solvents in perovskite droplets and partial residue of coordination solvents, controlling the crystallization state of perovskite in the subsequent crystallization growth process, reducing defects such as lattice vacancies and grain boundary pores, improving the uniformity and density of perovskite film, improving the charge transport efficiency of perovskite solar cells, and further improving the photoelectric conversion efficiency of solar cells.

[0015] Optionally, the perovskite precursor solution is deposited on the surface of the first carrier transport layer by inkjet printing or electrostatic spraying.

[0016] Optionally, the method for fabricating the perovskite solar cell further includes providing a passivation layer on the surface of the perovskite absorber layer; A second carrier transport material solution is formed on the surface of the passivation layer away from the conductive substrate, and then annealed to form the second carrier transport layer. During the film formation process, a protective gas is introduced into the environment from the second carrier transport material solution, and the gas flow of the protective gas forms an acute angle with the surface of the passivation layer.

[0017] This application provides a method where, during the film formation process of the second carrier transport material solution, a protective gas is introduced into the environment. The solvent in the second carrier transport material solution can be volatilized, thus not affecting the surface of the perovskite absorber layer. In particular, when water-soluble tin oxide is used to prepare the second carrier transport layer, the evaporation of water can prevent water from damaging the surface of the perovskite absorber layer.

[0018] Optionally, the temperature of the protective gas is 70-90°C.

[0019] When the temperature of the protective gas provided in this application embodiment is 70-90℃, the temperature of the preparation environment can be precisely controlled, and the evaporation efficiency of the solvent can be improved. In particular, when water is used as the solvent in the second carrier transport material solution, the evaporation of water can avoid water from damaging the surface of the perovskite absorber layer.

[0020] The protective gas flow provided in this embodiment forms an acute angle with the surface of the passivation layer. By introducing the protective gas flow, the environmental atmosphere during the preparation of the second carrier transport layer is protected, and the evaporation of the solvent in the solution of the second carrier transport material is accelerated.

[0021] Optionally, the method for fabricating the perovskite solar cell further includes sequentially depositing a passivation layer, an electron transport layer, a barrier layer, a transparent conductive layer, and an anti-reflection layer on the surface of the perovskite absorber layer away from the conductive substrate; A silver nanowire solution is deposited on the surface of the antireflective layer away from the conductive substrate, and then annealed to obtain the first gate line. A second gate line is obtained by printing silver paste on the first gate line, and after heating and curing, a top electrode is obtained by stacking the first gate line and the second gate line. During the film-forming process of the silver nanowire solution, a protective gas is introduced into the environment, and the gas flow of the protective gas forms an acute angle with the surface of the anti-reflective layer.

[0022] During the film formation process of the silver nanowire solution provided in this embodiment of the application on the surface of the antireflective layer away from the conductive substrate, the environment atmosphere during the preparation of the first gate line can be protected by introducing a protective gas into the environment, and the solvent in the silver nanowire solution can be evaporated.

[0023] Optionally, the temperature of the protective gas is 90-105°C.

[0024] During the film formation process of the silver nanowire solution provided in this application embodiment on the surface of the antireflective layer away from the conductive substrate, the solvent in the silver nanowire solution can be quickly evaporated by introducing a protective gas at 90-105°C into the environment, ensuring that the residual solvent has no destructive effect on the surface of the perovskite absorber layer.

[0025] The second aspect of this application provides a perovskite solar cell, which is prepared by the perovskite solar cell preparation method described above.

[0026] The perovskite solar cells provided in this application can obtain a large-area perovskite absorber layer with continuity and uniform thickness, thereby improving the charge transport efficiency of perovskite solar cells and further enhancing the photoelectric conversion efficiency of solar cells, which can promote the industrialization of perovskite solar cells.

[0027] Optionally, the perovskite solar cell includes a perovskite / crystalline silicon tandem solar cell.

[0028] A third aspect of this application provides a photovoltaic module, including a perovskite solar cell prepared by the method described above or a perovskite solar cell prepared as described above.

[0029] The embodiments of this application employing the above-described technical solution may have the following advantages: The perovskite precursor solution provided in this application provides a protective gas that is introduced into the environment during the deposition process. The gas flow of the protective gas forms an acute angle with the surface of the first carrier transport layer. This protective gas flow protects the environment during the perovskite thin film preparation process, accelerates the evaporation of volatile solvents, and reduces organic solvent residues. The acute angle between the gas flow and the surface of the first carrier transport layer allows the gas flow direction to form an angle with the first carrier transport layer, enabling perovskite droplets to fall vertically onto the surface of the first carrier transport layer. This results in the formation of a continuous and uniformly thick large-area perovskite thin film, improving the photoelectric conversion efficiency and stability of perovskite solar cell devices and promoting the industrialization of perovskite solar cells.

[0030] The perovskite solar cells provided in this application can obtain a large-area perovskite absorber layer with continuity and uniform thickness, thereby improving the charge transport efficiency of perovskite solar cells and further enhancing the photoelectric conversion efficiency of solar cells, which can promote the industrialization of perovskite solar cells. Attached Figure Description

[0031] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0032] Figure 1 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application.

[0033] Figure 2 This is a schematic diagram of the process of applying a solution using an electro-spray system.

[0034] Figure 3 This is a schematic diagram illustrating the process of applying a solution using an inkjet printing system.

[0035] Figure 4 The image shows a scanning electron microscope image of the cross-section of the perovskite absorber layer obtained in an embodiment of this application.

[0036] Explanation of reference numerals in the attached figures: Figure 1 The structure includes an n-type silicon substrate 100, a first intrinsic amorphous silicon layer 110, a second intrinsic amorphous silicon layer 120, an n-type microcrystalline silicon layer 130, a p-type microcrystalline silicon layer 140, a transparent electrode 150, a back electrode 160, a tunneling layer 200, a hole transport layer 300, a perovskite absorption layer 310, a passivation layer 320, an electron transport layer 330, a barrier layer 340, a transparent conductive layer 350, an anti-reflection layer 360, and a top electrode 370.

[0037] Figure 4 In the diagram, A represents the area with the lowest perovskite absorber layer thickness, and B represents the area with the highest perovskite absorber layer thickness. Detailed Implementation

[0038] The embodiments of this application are described in detail below, examples of which are illustrated in the accompanying drawings. In the drawings, for clarity, the dimensions of layers, regions, and elements, as well as their relative dimensions, may be exaggerated. Throughout, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. It should be noted that, unless otherwise specified, the features of this application and its embodiments can be combined with each other.

[0039] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0040] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0041] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0042] This application involves numerical intervals (i.e., numerical ranges). Unless otherwise specified, the distribution of selectable numerical values ​​within a numerical interval is considered continuous, and includes the two endpoints of the numerical interval (i.e., the minimum and maximum values), as well as every numerical value between these two endpoints. Unless otherwise specified, when a numerical interval refers only to integers within that interval, it includes the two endpoint integers of the numerical range, as well as every integer between the two endpoints, which is equivalent to directly listing every integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. The term "numerical interval" can be broadly included to include percentage intervals, ratio intervals, proportion intervals, etc.

[0043] Exemplary embodiments according to this application will now be described in more detail with reference to the accompanying drawings. It should be understood that these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0044] This application provides a method for fabricating a perovskite solar cell, comprising the following steps: A conductive substrate is provided, wherein a first carrier transport layer is disposed on one surface of the conductive substrate; A perovskite precursor solution is deposited on the surface of the first carrier transport layer away from the conductive substrate to form a perovskite thin film; the perovskite thin film is then annealed to form a perovskite absorber layer. During the film-forming process, a protective gas is introduced into the environment from the perovskite precursor solution, and the gas flow of the protective gas forms an acute angle with the surface of the first carrier transport layer.

[0045] In an optional embodiment, the first carrier transport layer includes a hole transport layer or an electron transport layer.

[0046] In an optional embodiment, the airflow of the protective gas forms an angle of 25°-65° (exemplary, such as 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) with the surface of the first carrier transport layer.

[0047] In an optional embodiment, the protective gas includes nitrogen, which is blown by an air knife.

[0048] In the perovskite precursor solution provided in this embodiment, nitrogen gas is blown through an air knife during the deposition process. The direction of the air knife is at an angle of 25°-65° to the surface of the first carrier transport layer. The introduction of nitrogen gas flow protects the environment during the perovskite thin film preparation process, accelerates the evaporation of volatile solvents, and reduces the residue of organic solvents. The air knife direction is limited to an angle of 25°-65° to the surface of the first carrier transport layer, allowing perovskite droplets to fall vertically onto the conductive substrate surface. This forms a continuous and uniformly thick large-area perovskite thin film, improving the photoelectric conversion efficiency and stability of perovskite solar cell devices and promoting the industrialization of perovskite solar cells.

[0049] In an optional embodiment, the first carrier transport layer may include a hole functional layer, such as a hole transport layer, a hole injection layer, an electron blocking layer, etc.

[0050] In an optional embodiment, the first carrier transport layer may include an electron transport layer.

[0051] In an optional embodiment, the perovskite film is dried at 100-130°C (exemplary, such as 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, etc.) for 20-60 seconds (exemplary, such as 20 seconds, 25 seconds, 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, 60 seconds, etc.) and then annealed to obtain a perovskite absorber layer.

[0052] In an optional embodiment, the perovskite film is dried in an infrared drying region.

[0053] The perovskite thin film provided in this application embodiment is dried in an infrared drying region of 100-130℃ (exemplary, such as 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, etc.) for 20-60s (exemplary, such as 20s, 25s, 30s, 35s, 40s, 45s, 50s, 55s, 60s, etc.) to remove residual solvent in a timely manner and prevent the perovskite thin film containing solvent from being damaged by moisture.

[0054] In an optional embodiment, the temperature of the protective gas is 50-70°C (exemplary, such as 50°, 55°, 60°, 65°, 70°, etc.), the pressure of the protective gas is 0.1-0.5MPa (exemplary, such as 0.1MPa, 0.2MPa, 0.3MPa, 0.4MPa, 0.5MPa, etc.), and the protective gas includes nitrogen; nitrogen is purged using an air knife.

[0055] The protective gas provided in this application embodiment has a temperature of 50-70℃ and a pressure of 0.1-0.5MPa, which can precisely control the temperature of the preparation environment. When the protective gas pressure is 0.1-0.5MPa, it can avoid the problem of charged droplet trajectory deviation caused by excessive airflow, and also avoid the problem of uneven thickness caused by insufficient airflow intensity, slow solvent evaporation rate, and easy droplet flow. The combination of temperature and pressure of the protective gas can assist the evaporation of solvent in the perovskite precursor solution and the perovskite film crystallization process, realizing the evaporation of volatile solvents in perovskite droplets and partial residue of coordination solvents, controlling the crystallization state of perovskite in the subsequent crystallization growth process, reducing defects such as lattice vacancies and grain boundary pores, improving the uniformity and density of perovskite film, improving the charge transport efficiency of perovskite solar cells, and further improving the photoelectric conversion efficiency of solar cells.

[0056] In an optional embodiment, the perovskite precursor solution is deposited on the surface of the first carrier transport layer by inkjet printing or electrostatic spraying.

[0057] This application provides a method for depositing a perovskite precursor solution onto the surface of a first carrier transport layer using inkjet printing or electrostatic spraying. During deposition, a protective gas is blown through the perovskite precursor solution using an air knife, providing a protective environment for the perovskite thin film preparation process and accelerating the evaporation of volatile solvents in the perovskite precursor solution, reducing organic solvent residue. By controlling the direction of the protective gas to form an angle of 25°-65° with the surface of the first carrier transport layer, and setting the protective gas pressure to 0.1-0.5 MPa, solutions with different properties can be made to achieve perpendicular deposition of perovskite precursor solution droplets onto the surface of the first carrier transport layer by adjusting the blowing direction and pressure of the protective gas. The protective gas can be heated, which accelerates the removal of volatile solvents from the perovskite precursor solution droplets without affecting the content of coordination solvents in the perovskite precursor solution.

[0058] In an optional embodiment, the method for fabricating the perovskite solar cell further includes providing a passivation layer on the surface of the perovskite absorber layer. A second carrier transport material solution is deposited on the surface of the passivation layer away from the conductive substrate, and then annealed at 100-130°C (exemplary, such as 100°C, 105°C, 110°C, 115°C, 120°C, 125°C, 130°C, etc.) (exemplary, such as 5 min, 8 min, 10 min, 12 min, 15 min, etc.) to form a second carrier transport layer. During the film formation process, a protective gas is introduced into the environment from the second carrier transport material solution, and the gas flow of the protective gas forms an acute angle with the surface of the passivation layer.

[0059] In an optional embodiment, the second carrier transport layer may include a hole functional layer, such as a hole transport layer, a hole injection layer, an electron blocking layer, etc.

[0060] In an optional embodiment, the second carrier transport layer may include an electron transport layer.

[0061] In an optional embodiment, when the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer.

[0062] In an optional embodiment, when the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer.

[0063] This application provides a method where, during the film formation process of the second carrier transport material solution, a protective gas is introduced into the environment. The solvent in the second carrier transport material solution can be volatilized, thus not affecting the surface of the perovskite absorber layer. In particular, when water-soluble tin oxide is used to prepare the second carrier transport layer, the evaporation of water can prevent water from damaging the surface of the perovskite absorber layer.

[0064] In an optional embodiment, the temperature of the protective gas is 70-90°C (exemplary, such as 70°C, 75°C, 80°C, 85°C, 90°C, etc.), and the protective gas includes nitrogen, which is blown by an air knife.

[0065] When the temperature of the protective gas provided in this application embodiment is 70-90℃, the temperature of the preparation environment can be precisely controlled, and the evaporation efficiency of the solvent can be improved. In particular, when water is used as the solvent in the second carrier transport material solution, the evaporation of water can avoid water from damaging the surface of the perovskite absorber layer.

[0066] In an optional embodiment, the airflow of the protective gas forms an angle of 25°-65° (exemplary, such as 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) with the surface of the passivation layer.

[0067] The protective gas flow provided in this embodiment forms an angle of 25°-65° with the surface of the passivation layer. By introducing the protective gas flow, the environmental atmosphere during the preparation of the second carrier transport layer is protected, and the evaporation of the solvent in the solution of the second carrier transport material is accelerated.

[0068] In an optional embodiment, the second carrier transport layer includes a hole transport layer or an electron transport layer.

[0069] In an optional embodiment, when the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer.

[0070] In an optional embodiment, when the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer.

[0071] In an optional embodiment, the method for preparing the perovskite solar cell further includes sequentially disposing of a passivation layer, an electron transport layer, a blocking layer, a transparent conductive layer, and an anti-reflection layer on the surface of the perovskite absorber layer away from the conductive substrate. A silver nanowire solution is deposited on the surface of the antireflective layer away from the conductive substrate, and then annealed to obtain the first gate line. A second gate line is obtained by printing silver paste on the first gate line, and after heating and curing, a top electrode is obtained by stacking the first gate line and the second gate line. During the film-forming process of the silver nanowire solution, a protective gas is introduced into the environment, and the gas flow of the protective gas forms an acute angle with the surface of the anti-reflective layer.

[0072] During the film formation process of the silver nanowire solution provided in this embodiment of the application on the surface of the antireflective layer away from the conductive substrate, the environment atmosphere during the preparation of the first gate line can be protected by introducing a protective gas into the environment, and the solvent in the silver nanowire solution can be evaporated.

[0073] In an optional embodiment, the airflow of the protective gas forms an angle of 25°-65° (exemplary, such as 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) with the surface of the antireflective layer, and the temperature of the protective gas is 90-105°C (exemplary, such as 90°C, 95°C, 100°C, 105°C, etc.), and the protective gas includes nitrogen; the nitrogen is blown by an air knife.

[0074] During the film formation process of the silver nanowire solution provided in this application embodiment on the surface of the antireflective layer away from the conductive substrate, the solvent in the silver nanowire solution can be quickly evaporated by introducing a protective gas at 90-105°C into the environment, ensuring that the residual solvent has no destructive effect on the surface of the perovskite absorber layer.

[0075] The method provided in this application, which involves blowing nitrogen gas through an air knife during the deposition process, controls the direction of the air knife to form an acute angle with the horizontal plane of the conductive substrate, particularly an angle of 25°-65°. This method is applicable not only to the preparation of perovskite thin films, but also to the preparation of SAM layers, passivation layers, electron transport layers, insulating protective layers, and electrode layers. When preparing SAM layers, passivation layers, or electron transport layers, a small amount of solvent that may damage the surface of the perovskite absorber layer can be introduced. This solvent can be volatilized during the spraying process and will not damage the surface of the perovskite absorber layer.

[0076] This application provides a perovskite solar cell, which is prepared by the perovskite solar cell preparation method described above.

[0077] In an optional embodiment, the perovskite solar cell includes a perovskite / crystalline silicon tandem solar cell.

[0078] This application provides a method for fabricating a perovskite / crystalline silicon tandem solar cell, comprising the following steps: S1. Fabrication of crystalline silicon bottom solar cells: S11. Using a chemical vapor deposition process, amorphous silicon (a-Si(i)) is deposited on the first and second surfaces on both sides of an n-type silicon wafer substrate at a deposition temperature of 180-210℃ (exemplary, such as 180℃, 190℃, 200℃, 205℃, 210℃, etc.) to obtain a first intrinsic amorphous silicon layer with a thickness of 5-10nm (exemplary, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, etc.) and a second intrinsic amorphous silicon layer with a thickness of 5-10nm (exemplary, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, etc.); S12. Using a chemical vapor deposition process, p-type microcrystalline silicon is deposited on the surface of the second intrinsic amorphous silicon layer at a deposition temperature of 180-210℃ (exemplary, such as 180℃, 190℃, 200℃, 205℃, 210℃, etc.) to obtain a p-type microcrystalline silicon layer with a thickness of 2-8nm (exemplary, such as 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, etc.); S13. Using a chemical vapor deposition process, n-type microcrystalline silicon is deposited on the surface of the first intrinsic amorphous silicon layer at a deposition temperature of 180-210℃ (exemplary, such as 180℃, 190℃, 200℃, 205℃, 210℃, etc.) to obtain an n-type microcrystalline silicon layer with a thickness of 2-8nm (exemplary, such as 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, etc.); S14. Using physical vapor deposition, ITO (indium tin oxide) is deposited on the surface of a p-type microcrystalline silicon layer at a deposition temperature of 70-90°C (exemplary, such as 70°C, 75°C, 80°C, 85°C, 90°C, etc.) to obtain a bottom transparent electrode with a thickness of 60-100nm (exemplary, such as 60nm, 70nm, 80nm, 90nm, 100nm, etc.); S15. Using physical vapor deposition, Ag is deposited on the surface of the bottom transparent electrode at a deposition temperature of 80-110℃ (exemplary, such as 80℃, 90℃, 100℃, 105℃, 110℃, etc.) to obtain a bottom back electrode with a thickness of 2-10nm (exemplary, such as 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, etc.); S2. Preparation of tunneling layer: Using physical vapor deposition, IZO (indium zinc oxide) is deposited on the surface of the n-type microcrystalline silicon layer of the crystalline silicon bottom cell at a deposition temperature of 70-90°C (exemplary, such as 70°C, 75°C, 80°C, 85°C, 90°C, etc.) to obtain a tunneling layer with a thickness of 10-20nm (exemplary, such as 10nm, 12nm, 15nm, 18nm, 20nm, etc.); S3. Fabrication of perovskite top solar cells: S31. Dissolve [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid in ethanol to prepare a [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid solution with a molar concentration of 0.2-2 mmol / L (exemplary, such as 0.2 mmol / L, 0.5 mmol / L, 0.8 mmol / L, 1.2 mmol / L, 1.5 mmol / L, 2 mmol / L, etc.). Take 80-120 μL (exemplary, such as 80 μL, 90 μL, 100 μL, 110 μL, 120 μL, etc.) of the [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid solution and drop it onto the surface of the tunneling layer obtained on the surface of the n-type microcrystalline silicon layer of the crystalline silicon bottom cell, at a speed of 3000-5000 rpm (exemplary, such as 30 rpm, etc.). Spin-coating at rotation speeds of 00 rpm, 3500 rpm, 4000 rpm, 4500 rpm, 5000 rpm, etc. for 5-20 seconds (exemplary values ​​such as 5 seconds, 8 seconds, 10 seconds, 12 seconds, 15 seconds, 18 seconds, 20 seconds, etc.) and then annealing on a heating stage at a temperature of 80-120℃ (exemplary values ​​such as 80℃, 90℃, 100℃, 105℃, 110℃, 115℃, 120℃, etc.) for 5-15 minutes (exemplary values ​​such as 5 minutes, 8 minutes, 10 minutes, 12 minutes, 15 minutes, etc.) to obtain a hole transport layer with a thickness of 1-30 nm (exemplary values ​​such as 1 nm, 2 nm, 3 nm, 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, 23 nm, 25 nm, 28 nm, 30 nm, etc.). S32. 85-90 mg (exemplary, such as 85 mg, 86 mg, 87 mg, 88 mg, 88.3 mg, 89 mg, 90 mg, etc.) of cesium iodide, 225-240 mg (exemplary, such as 225 mg, 227 mg, 229 mg, 230 mg, 232 mg, 233.3 mg, 235 mg, 238 mg, 240 mg, etc.) of formamidinium iodoformide, 185-190 mg (exemplary, such as 185 mg, 186 mg, 187 mg, 187.2 mg, 188 mg, 189 mg, 190 mg, etc.) of lead bromide, and 540-550 mg (exemplary, such as 540 mg, ... Lead iodide (542 mg, 544 mg, 546 mg, 548 mg, 548.6 mg, 550 mg, etc.) is dissolved in 1000 μL of a mixed solvent of DMF and DMSO (the volume ratio of DMF to DMSO is 3-5:1 (exemplary, such as 3:1, 4:1, 5:1, etc.)). The solution is then filtered through a 0.1-0.5 μm (exemplary, such as 0.1 μm, 0.22 μm, 0.4 μm, 0.5 μm, etc.) PTFE filter to obtain a FA molar concentration of 1-2 mol / L (exemplary, such as 1 mol / L, 1.2 mol / L, 1.5 mol / L, 1.8 mol / L, 2 mol / L, etc.). 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. Perovskite precursor solution; Using inkjet printing, the perovskite precursor solution is deposited onto the surface of the hole transport layer by spraying the solution through an inkjet printing system to form a perovskite thin film. After annealing at 110-130℃ (exemplary, such as 110℃, 115℃, 120℃, 125℃, 130℃, etc.) for 15-30 min (exemplary, such as 15 min, 18 min, 20 min, 22 min, 25 min, 30 min, etc.), a perovskite absorber layer with a thickness of 0.5-1.5 μm is obtained. In this embodiment, a crystalline silicon bottom cell is used. The n-type silicon wafer used in the crystalline silicon bottom cell undergoes texturing, which forms a pyramidal structure morphology microscopically, affecting the subsequent layer structure. The perovskite absorber layer obtained in this embodiment has a non-uniform thickness, such as... Figure 4 The image shown is a scanning electron microscope image of the cross-section of the perovskite absorber layer obtained in this embodiment of the application. Figure 4 In the diagram, A represents the area with the lowest perovskite absorber layer thickness, and B represents the area with the highest perovskite absorber layer thickness; through... Figure 4 It can be seen that the thickness of the perovskite absorber layer obtained in the embodiments of this application has a range value, which is 0.5-1.5 μm.

[0079] During the deposition of the perovskite precursor solution, nitrogen gas is blown through an air knife at a pressure of 0.1-0.5 MPa. The nitrogen gas enters the air knife channel and is then blown out as nitrogen gas. The direction of the air knife forms an angle of 25°-65° (exemplary angles such as 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) with the horizontal plane of the crystalline silicon substrate. The distance between the nozzle of the inkjet printing system and the crystalline silicon substrate is 5-15 mm (exemplary angle such as 0.1-0.5 MPa). (5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 12nm, 15nm, etc.) The advance speed of the inkjet printing system is 0.001-0.008mm / min (exemplary values ​​include 0.001mm / min, 0.002mm / min, 0.003mm / min, 0.004mm / min, 0.005mm / min, 0.006mm / min, 0.007mm / min, 0.008mm / min, etc.). S33. Dissolve 2-phenylethylamine hydroiodate and oleylamine iodine in methanol at a molar ratio of 3-5:1 (exemplary, such as 3:1, 4:1, 5:1, etc.) to prepare a passivation solution with a mass-volume concentration of 0.5-1.5 mg / mL (exemplary, such as 0.5 mg / mL, 0.8 mg / mL, 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, etc.). Place the passivation solution on the surface of the perovskite absorber layer and apply it at 3000-5000 rpm (exemplary, such as 3000 rpm, 3500 rpm, 400 rpm, etc.). Spin coat at a rotation speed of 0 rpm, 4500 rpm, 5000 rpm, etc. for 8-15 seconds (exemplary, such as 8 seconds, 10 seconds, 12 seconds, 15 seconds, etc.), then place it on a heating stage at a temperature of 80-110℃ (exemplary, such as 80℃, 90℃, 100℃, 105℃, 110℃, etc.) for annealing for 2-8 minutes (exemplary, such as 2 minutes, 4 minutes, 6 minutes, 8 minutes, etc.) to obtain a passivation layer with a thickness of 5-10 nm (exemplary, such as 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, etc.). S34. Fullerene (C60) is deposited on the surface of the passivation layer by thermal evaporation to obtain a fullerene electron transport layer with a thickness of 10-20 nm (exemplary, such as 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, etc.). S35. Atomic layer deposition is used to deposit tin dioxide on the surface of the fullerene electron transport layer to obtain a tin dioxide barrier layer with a thickness of 8-20 nm (exemplary, such as 8 nm, 10 nm, 13 nm, 15 nm, 18 nm, 20 nm, etc.). S36. IZO is deposited on the surface of the tin dioxide barrier layer using physical vapor deposition to obtain a top transparent conductive layer with a thickness of 50-90 nm (exemplary, such as 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, etc.); S37. Magnesium fluoride is deposited on the surface of the top transparent conductive layer by thermal evaporation to obtain an anti-reflective layer with a thickness of 100-200 nm (exemplary, such as 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, etc.); S38. Silver is deposited on the surface of the anti-reflective layer using a thermal evaporation method to obtain a silver gate line with a thickness of 600-1000nm (exemplary, such as 600nm, 700nm, 800nm, 900nm, 1000nm, etc.) as the top electrode.

[0080] In an optional embodiment, the method for preparing the perovskite absorber layer includes: Cesium iodide in doses of 85-90 mg (exemplary values ​​such as 85 mg, 86 mg, 87 mg, 88 mg, 88.3 mg, 89 mg, 90 mg, etc.), formamidin iodoformin in doses of 225-240 mg (exemplary values ​​such as 225 mg, 227 mg, 229 mg, 230 mg, 232 mg, 233.3 mg, 235 mg, 238 mg, 240 mg, etc.), and formamidin iodoformin in doses of 185-190 mg (exemplary values ​​such as 185 mg, 186 mg, 187 mg, 187.2 mg, 188 mg, etc.) Lead bromide (189 mg, 190 mg, etc.) and lead iodide (540-550 mg, exemplary values ​​such as 540 mg, 542 mg, 544 mg, 546 mg, 548 mg, 548.6 mg, 550 mg, etc.) were dissolved in 1000 μL of a mixed solvent of DMF and DMSO (the volume ratio of DMF to DMSO was 3-5:1, exemplary values ​​such as 3:1, 4:1, 5:1, etc.). The solution was then filtered through a 0.22 μm PTFE filter to obtain a FA concentration of 1-2 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br 0.23. Perovskite precursor solution; A perovskite precursor solution is deposited onto the surface of the hole transport layer using an inkjet printing system to form a perovskite film by spraying the solution. The perovskite film is then dried in an infrared drying region at 100-130℃ (exemplary values ​​such as 100℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, etc.) for 20-60 seconds (exemplary values ​​such as 20s, 25s, 30s, 35s, 40s, 45s, 50s, 55s, 60s). The perovskite precursor solution is then annealed for 15-30 minutes (exemplary values ​​such as 110℃, 115℃, 120℃, 125℃, 130℃, etc.) on a heating stage at a temperature of 110-130℃ for 15-30 minutes to obtain a perovskite absorber layer with a thickness of 0.5-1.5 μm. During the deposition process, nitrogen gas is blown through the perovskite precursor solution using an air knife, with a nitrogen gas pressure of 0.1-0.5 MPa. (Examples include 0.1MPa, 0.2MPa, 0.3MPa, 0.4MPa, 0.5MPa, etc.) The nitrogen gas enters the air knife channel and is then blown out as nitrogen air. The direction of the air knife forms an angle of 25°-65° (examples include 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) with the horizontal plane of the crystalline silicon solar cell. The distance between the nozzle of the inkjet printing system and the crystalline silicon solar cell is 5-15mm (examples include 5mm, 6mm, 7mm, etc.). The inkjet printing system has a feed rate of 0.001-0.008 mm / min (exemplary values ​​include 0.001 mm / min, 0.002 mm / min, 0.003 mm / min, 0.004 mm / min, 0.005 mm / min, 0.006 mm / min, 0.007 mm / min, 0.008 mm / min, etc.).

[0081] In an optional embodiment, the method for preparing the perovskite absorber layer includes: Cesium iodide in doses of 85-90 mg (exemplary values ​​such as 85 mg, 86 mg, 87 mg, 88 mg, 88.3 mg, 89 mg, 90 mg, etc.), formamidin iodoformin in doses of 225-240 mg (exemplary values ​​such as 225 mg, 227 mg, 229 mg, 230 mg, 232 mg, 233.3 mg, 235 mg, 238 mg, 240 mg, etc.), and formamidin iodoformin in doses of 185-190 mg (exemplary values ​​such as 185 mg, 186 mg, 187 mg, 187.2 mg, 188 mg, etc.) Lead bromide (189 mg, 190 mg, etc.) and lead iodide (540-550 mg, exemplary values ​​such as 540 mg, 542 mg, 544 mg, 546 mg, 548 mg, 548.6 mg, 550 mg, etc.) were dissolved in 1000 μL of a mixed solvent of DMF and DMSO (the volume ratio of DMF to DMSO was 3-5:1, exemplary values ​​such as 3:1, 4:1, 5:1, etc.). The solution was then filtered through a 0.22 μm PTFE filter to obtain a FA concentration of 1-2 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. A perovskite precursor solution is sprayed onto the surface of the hole transport layer using an electrospray system, forming a perovskite film. The perovskite film is then annealed for 15-30 minutes (exemplary values ​​such as 15 min, 18 min, 20 min, 22 min, 25 min, 30 min, etc.) on a heating stage at 100-130℃ for 15-30 minutes, obtaining a perovskite absorber layer with a thickness of 0.5-1.5 μm. During the deposition process, nitrogen gas is blown through the perovskite precursor solution using an air knife, with a nitrogen gas pressure of 0.1-0.5 MPa (exemplary values ​​such as 0.1 MPa, 0.2 MPa, 0.3 MPa). The nitrogen gas enters the air knife channel and is then blown out as nitrogen air. The direction of the air knife forms a 60° angle with the horizontal plane of the crystalline silicon bottom cell. The distance between the crystalline silicon bottom cell and the nozzle of the electro-spray system is 20-35mm. The voltage of the electro-spray system is set to 5-15kV (exemplary, such as 5kV, 6kV, 7kV, 8kV, 9kV, 10kV, 12kV, 15kV, etc.), and the propulsion speed is 0.001-0.008mm / min (exemplary, such as 0.001mm / min, 0.002mm / min, 0.003mm / min, 0.004mm / min, 0.005mm / min, 0.006mm / min, 0.007mm / min, 0.008mm / min, etc.).

[0082] In an optional embodiment, the method for preparing the electron transport layer includes: A tin oxide solution is sprayed onto the surface of the passivation layer using an electrospray system. After spraying, the layer is transferred to a hot plate at 100-130°C (exemplary values ​​such as 100°C, 105°C, 110°C, 115°C, 120°C, 130°C, etc.) for annealing for 8-15 minutes (exemplary values ​​such as 8 minutes, 10 minutes, 12 minutes, 15 minutes, etc.) to obtain a thickness of 10-40 nm (exemplary values ​​such as 10 nm, 12 nm, etc.). An electron transport layer (nm, 15nm, 18nm, 20nm, 22nm, 25nm, 28nm, 30nm, 33nm, 35nm, 38nm, 40nm, etc.) is formed; during the deposition process of the tin oxide solution, nitrogen gas at 70-90℃ (exemplary, such as 70℃, 75℃, 80℃, 85℃, 90℃, etc.) is blown by an air knife, and the pressure of the nitrogen gas is 0.1-0.5MPa (exemplary, such as 0.1MPa, 0.2MPa). The nitrogen gas is introduced into the air knife channel and then blown out as nitrogen air. The direction of the air knife is at an angle of 25°-65° (exemplary values ​​such as 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) to the horizontal plane of the crystalline silicon bottom cell. The distance between the crystalline silicon bottom cell and the nozzle of the electro-spray system is 20-35mm, and the voltage of the electro-spray system is set to 3-10kV (exemplary values ​​such as 0.3MPa, 0.4MPa, 0.5MPa, etc.). (e.g., 3kV, 4kV, 5kV, 6kV, 7kV, 8kV, 9kV, 10kV, etc.)) with a propulsion speed of 0.001-0.008 mm / min (exemplary values ​​such as 0.001 mm / min, 0.002 mm / min, 0.003 mm / min, 0.004 mm / min, 0.005 mm / min, 0.006 mm / min, 0.007 mm / min, 0.008 mm / min, etc.).

[0083] The tin oxide solution is obtained by adding tin oxide to a mixed solvent formed by water and isopropanol (the volume ratio of water to isopropanol is 1:(8-10)). The mass-volume concentration of tin oxide in the tin oxide solution is 1-5 mg / mL (exemplary, such as 1 mmol / L, 2 mmol / L, 3 mmol / L, 4 mmol / L, 5 mmol / L, etc.), and the particle size of tin oxide is 5-20 nm (exemplary, such as 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, etc.).

[0084] This application provides an embodiment in which nitrogen gas is blown through an air knife during the deposition process of the electron transport solution. The solvent in the electron transport solution can be evaporated without affecting the surface of the perovskite absorber layer. In particular, the tin oxide solution is obtained by adding tin oxide to a mixed solvent formed by water and isopropanol. After the water evaporates, it can avoid water from damaging the surface of the perovskite absorber layer, so that water-soluble high-performance tin oxide can be used as a raw material for preparing the electron transport layer in perovskite solar cells.

[0085] In an optional embodiment, the method for preparing the top electrode includes: A spray coating method is used, with a grid line mask placed on the surface of the antireflective layer. Silver nanowire solution is then sprayed and deposited onto the surface of the antireflective layer using an electrospray system. The layer is then annealed on a heating plate at 50-70°C (exemplary values ​​such as 50°C, 55°C, 60°C, 65°C, 70°C, etc.) for 8-15 minutes (exemplary values ​​such as 8 minutes, 10 minutes, 12 minutes, 15 minutes, etc.) to form a first grid line with a thickness of 100-200 nm. Printing is then performed on the first grid line. A second gate line is obtained by applying silver paste. After curing at 90-110℃ (exemplary, such as 90℃, 95℃, 100℃, 105℃, 110℃, etc.) for 4-10 minutes (exemplary, such as 4 minutes, 6 minutes, 8 minutes, 10 minutes, etc.), a top electrode with a thickness of 3-6μm (exemplary, such as 3μm, 3.5μm, 4μm, 4.5μm, 5μm, 5.5μm, 6μm, etc.) is obtained by stacking the first gate line and the second gate line.

[0086] During the deposition of the silver nanowire solution, nitrogen gas at 90-105°C (exemplary values ​​such as 90°C, 95°C, 100°C, 105°C, etc.) is blown out via an air knife. The nitrogen gas pressure is 0.1-0.5 MPa (exemplary values ​​such as 0.1 MPa, 0.2 MPa, 0.3 MPa, 0.4 MPa, 0.5 MPa, etc.). The nitrogen gas enters the air knife channel and is then blown out as nitrogen gas. The direction of the air knife forms an angle of 25°-65° (exemplary values ​​such as 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, etc.) with the horizontal plane of the crystalline silicon substrate. The distance between the crystalline silicon substrate and the nozzle of the electrospray system is 20-3... 5mm (exemplary, such as 20nm, 23nm, 25nm, 28nm, 30nm, 32nm, 35nm, etc.), setting the voltage of the electrospray system to 3-10kV (exemplary, such as 3kV, 4kV, 5kV, 6kV, 7kV, 8kV, 9kV, 10kV, etc.), and the propulsion speed to 0.001-0.008mm / min (exemplary, such as 0.001mm / min, 0.002mm / min, 0.003mm / min, 0.004mm / min, 0.005mm / min, 0.006mm / min, 0.007mm / min, 0.008mm / min, etc.).

[0087] The silver nanowire solution contains silver nanowires with a mass-volume concentration of 0.1-1 mg / mL (exemplary concentrations include 0.1 mg / mL, 0.3 mg / mL, 0.5 mg / mL, 0.8 mg / mL, 1 mg / mL, etc.), and the silver nanowire solution contains hypophosphoric acid with a molar concentration of 0.1-2 mmol / mL (exemplary concentrations include 0.1 mmol / L, 0.5 mmol / L, 1 mmol / L, 1.2 mmol / L, 1.5 mmol / L, 2 mmol / L, etc.).

[0088] In an optional embodiment, metal nanoparticles or nanowires are sprayed before grid line printing. The solvents used for the metal nanoparticles include acetonitrile, DMF, etc., which usually damage the surface of the perovskite absorber layer. However, metal nanoparticles and nanowires are easily oxidized. By using the silver nanowire solution provided in the embodiments of this application, nitrogen air at 90-105°C is blown by an air knife during the deposition process. Under the protection of nitrogen, the solvent in the silver nanowire solution can be quickly evaporated, avoiding the residual solvent from damaging the surface of the perovskite absorber layer.

[0089] The top electrode provided in this embodiment is composed of a silver nanowire solution sprayed and deposited onto the surface of an antireflective layer by an electrospray system, a first grid line formed by annealing, and a second grid line obtained by printing silver paste on the first grid line. The area of ​​the metallized region of the sprayed silver nanowire can be controlled within 5-10 μm, which can obtain a smaller grid line area than that obtained by directly printing silver, thereby reducing the amount of silver used.

[0090] This application provides a photovoltaic module, including a perovskite solar cell prepared by the perovskite solar cell preparation method described above or a perovskite solar cell prepared as described above.

[0091] The following section will present performance tests on the structure or fabrication method of the perovskite solar cell provided in the embodiments of this application, as well as related comparative examples.

[0092]

Example 1

[0093] The crystalline silicon bottom cell includes an n-type microcrystalline silicon layer 130, a first intrinsic amorphous silicon layer 110, an n-type silicon wafer substrate 100, a second intrinsic amorphous silicon layer 120, a p-type microcrystalline silicon layer 140, a transparent electrode 150, and a back electrode 160, which are stacked sequentially.

[0094] The perovskite top solar cell comprises, in sequence, a hole transport layer 300, a perovskite absorption layer 310, a passivation layer 320, an electron transport layer 330, a blocking layer 340, a transparent conductive layer 350, an anti-reflection layer 360, and a top electrode 370.

[0095] This application provides a method for fabricating a perovskite / crystalline silicon tandem solar cell, comprising the following steps: S1. Fabrication of crystalline silicon bottom solar cells: S11. Using chemical vapor deposition, amorphous silicon (a-Si(i)) is deposited on the first and second surfaces of an n-type silicon substrate 100 with a thickness of 150 μm at a deposition temperature of 200 °C, to obtain a first intrinsic amorphous silicon layer 110 with a thickness of 8 nm and a second intrinsic amorphous silicon layer 120 with a thickness of 8 nm. S12. Using chemical vapor deposition, p-type microcrystalline silicon is deposited on the surface of the second intrinsic amorphous silicon layer at a deposition temperature of 200℃ to obtain a p-type microcrystalline silicon layer 140 with a thickness of 6nm. S13. Using chemical vapor deposition, n-type microcrystalline silicon is deposited on the surface of the first intrinsic amorphous silicon layer at a deposition temperature of 200℃ to obtain an n-type microcrystalline silicon layer 130 with a thickness of 6nm. S14. Using physical vapor deposition, ITO (indium tin oxide) is deposited on the surface of a p-type microcrystalline silicon layer at a deposition temperature of 80℃ to obtain a bottom transparent electrode 150 with a thickness of 80nm. S15. Using physical vapor deposition, Ag is deposited on the surface of the bottom transparent electrode at a deposition temperature of 100℃ to obtain a bottom back electrode 160 with a thickness of 4nm. S2. Preparation of tunneling layer: IZO (indium zinc oxide) was deposited on the surface of the n-type microcrystalline silicon layer of the crystalline silicon bottom cell using physical vapor deposition at a deposition temperature of 80℃ to obtain a tunneling layer 200 with a thickness of 15nm. S3. Fabrication of perovskite top solar cells: S31. Dissolve [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid in ethanol to prepare a [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid solution with a molar concentration of 0.8 mmol / L. Take 100 μL of the [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid solution and drop it onto the surface of the tunneling layer obtained on the surface of the n-type microcrystalline silicon layer of the crystalline silicon bottom cell. Spin coat it at a speed of 4000 rpm for 12 s, and then place it on a heating stage at a temperature of 100℃ for annealing for 10 min to obtain a hole transport layer 300 with a thickness of 1-3 nm. S32. Dissolve 88.3 mg cesium iodide, 233.9 mg formamidine iodide, 187.2 mg lead bromide, and 548.6 mg lead iodide in a mixed solvent of 800 μL DMF and 200 μL DMSO. Filter the solution through a 0.22 μm PTFE filter to obtain FA with a molar concentration of 1.7 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. The perovskite precursor solution is deposited on the surface of the hole transport layer by inkjet printing. The perovskite thin film is formed by spraying the solution onto the surface of the hole transport layer. The perovskite thin film is then annealed on a heating stage at 120°C for 20 minutes to obtain a perovskite absorber layer 310 with a thickness of 0.5-1.5 μm. During the deposition process, nitrogen gas is blown through an air knife at a pressure of 0.2 MPa. The nitrogen gas enters the air knife channel and is then blown out as nitrogen gas. The direction of the air knife is at a 30° angle to the horizontal plane of the crystalline silicon base cell. The distance between the nozzle of the inkjet printing system and the crystalline silicon base cell is 8 mm, and the advance speed of the inkjet printing system is 0.001 mm / min. 3S34. Fullerene (C60) was deposited on the surface of the passivation layer by thermal evaporation to obtain an electron transport layer 330 with a thickness of 12 nm; S35. Tin dioxide was deposited on the surface of the fullerene electron transport layer using atomic layer deposition to obtain a barrier layer 340 with a thickness of 10 nm. S36. IZO was deposited on the surface of the tin dioxide barrier layer by physical vapor deposition to obtain a top transparent conductive layer 350 with a thickness of 70 nm. S37. Magnesium fluoride is deposited on the surface of the top transparent conductive layer by thermal evaporation to obtain an anti-reflection layer 360 with a thickness of 120 nm; S38. Silver is deposited on the surface of the antireflective layer by thermal evaporation to obtain a silver gate line with a thickness of 800 nm as the top electrode 370.

[0096] like Figure 3 The diagram illustrates a method for inkjet printing, specifically a process of spraying a solution using an inkjet printing system.

[0097]

Example 2

[0098] The details are as follows: S32. Dissolve 88.3 mg cesium iodide, 233.9 mg formamidine iodide, 187.2 mg lead bromide, and 548.6 mg lead iodide in a mixed solvent of 800 μL DMF and 200 μL DMSO. Filter the solution through a 0.22 μm PTFE filter to obtain FA with a molar concentration of 1.7 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. The perovskite precursor solution is deposited onto the surface of the hole transport layer by inkjet printing. The perovskite thin film is then dried in an infrared drying region at 120°C for 30 seconds and annealed on a heating stage at 120°C for 20 minutes to obtain a perovskite absorption layer with a thickness of 0.5-1.5 μm. During the deposition process, nitrogen gas is blown through an air knife at a pressure of 0.2 MPa. The nitrogen enters the air knife channel and is then blown out as nitrogen gas. The air knife direction forms a 30° angle with the horizontal plane of the crystalline silicon base cell. The distance between the nozzle of the inkjet printing system and the crystalline silicon base cell is 8 mm, and the advance speed of the inkjet printing system is 0.001 mm / min.

[0099] like Figure 3The diagram illustrates a method for inkjet printing, specifically a process of spraying a solution using an inkjet printing system.

[0100]

Example 3

[0101] The details are as follows: S32. Dissolve 88.3 mg cesium iodide, 233.9 mg formamidine iodide, 187.2 mg lead bromide, and 548.6 mg lead iodide in a mixed solvent of 800 μL DMF and 200 μL DMSO. Filter the solution through a 0.22 μm PTFE filter to obtain FA with a molar concentration of 1.7 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. The perovskite precursor solution is sprayed onto the surface of the hole transport layer using an electrospray system to form a perovskite film. The perovskite film is then annealed on a heating stage at 120°C for 20 minutes to obtain a perovskite absorber layer with a thickness of 0.5-1.5 μm. During the deposition process, nitrogen gas is blown through an air knife at a pressure of 0.2 MPa. The nitrogen gas enters the air knife channel and is then blown out as nitrogen gas. The direction of the air knife is at a 60° angle to the horizontal plane of the crystalline silicon base cell. The distance between the crystalline silicon base cell and the nozzle of the electrospray system is 30 mm. The voltage of the electrospray system is set to 10 kV, and the propulsion speed is 0.002 mm / min.

[0102] like Figure 2 The diagram shows a process of applying a solution using an electro-spray system.

[0103]

Example 4

[0104] The details are as follows: S34. A tin oxide solution is sprayed onto the surface of the passivation layer using an electrospray system to form a film. After spraying, the film is transferred to a 120°C heating plate for annealing for 10 minutes to obtain an electron transport layer with a thickness of 10-20 nm. During the deposition process, nitrogen gas at 85°C is blown through an air knife at a pressure of 0.2 MPa. The nitrogen gas enters the air knife channel and is then blown out as nitrogen gas. The direction of the air knife is at a 45° angle to the horizontal plane of the crystalline silicon base cell. The distance between the crystalline silicon base cell and the nozzle of the electrospray system is 30 mm. The voltage of the electrospray system is set to 5 kV, and the propulsion speed is 0.005 mm / min.

[0105] The tin oxide solution is obtained by adding tin oxide to a mixed solvent formed by water and isopropanol (the volume ratio of water to isopropanol is 1:9). The mass-volume concentration of tin oxide in the tin oxide solution is 2 mg / mL, and the particle size of tin oxide is 5-20 nm.

[0106] like Figure 2 The diagram shows a process of applying a solution using an electro-spray system.

[0107]

Example 5

[0108] The details are as follows: S32. Dissolve 88.3 mg cesium iodide, 233.9 mg formamidine iodide, 187.2 mg lead bromide, and 548.6 mg lead iodide in a mixed solvent of 800 μL DMF and 200 μL DMSO. Filter the solution through a 0.22 μm PTFE filter to obtain FA with a molar concentration of 1.7 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br0.2 3. The perovskite precursor solution was deposited on the surface of the hole transport layer by inkjet printing. The perovskite precursor solution was sprayed onto the surface of the hole transport layer by inkjet printing system to form a perovskite film. The perovskite film was then annealed on a heating stage at 120°C for 20 min to obtain a perovskite absorber layer with a thickness of 0.5-1.5 μm.

[0109] The distance between the nozzle of the inkjet printing system and the crystalline silicon base cell is 8mm, and the advance speed of the inkjet printing system is 0.001mm / min.

[0110] S38. Using a spraying method, a grid line mask is placed on the surface of the anti-reflective layer. Silver nanowire solution is sprayed and deposited on the surface of the anti-reflective layer through an electrospray system. The layer is then annealed on a heating plate at 60°C for 10 minutes to form a first grid line with a thickness of 100-200 nm. Silver paste is printed on the first grid line to obtain a second grid line. After curing at 100°C for 6 minutes, a top electrode with a thickness of 3-6 μm is obtained by stacking the first and second grid lines.

[0111] During the deposition process of the silver nanowire solution, nitrogen air at 100°C with a pressure of 0.2 MPa is blown out by an air knife. The nitrogen air enters the air knife channel and is then blown out as nitrogen air. The direction of the air knife is at a 45° angle to the horizontal plane of the crystalline silicon base cell. The distance between the crystalline silicon base cell and the nozzle of the electrospray system is 30 mm. The voltage of the electrospray system is set to 5 kV and the propulsion speed is 0.005 mm / min.

[0112] The silver nanowire solution has a mass-volume concentration of 0.5 mg / mL and contains hypophosphoric acid at a molar concentration of 1 mmol / mL.

[0113] like Figure 3 The diagram illustrates a method for inkjet printing, specifically a process of spraying a solution using an inkjet printing system.

[0114] Comparative Example 1 The perovskite / crystalline silicon tandem solar cell of Comparative Example 1 was prepared according to the preparation method of the perovskite / crystalline silicon tandem solar cell provided in Example 1, except that nitrogen gas was not blown during the deposition of the perovskite precursor solution.

[0115] The details are as follows: S32. Dissolve 88.3 mg cesium iodide, 233.9 mg formamidine iodide, 187.2 mg lead bromide, and 548.6 mg lead iodide in a mixed solvent of 800 μL DMF and 200 μL DMSO. Filter the solution through a 0.22 μm PTFE filter to obtain FA with a molar concentration of 1.7 mol / L.0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. The perovskite precursor solution was deposited on the surface of the hole transport layer by inkjet printing. The perovskite precursor solution was sprayed onto the surface of the hole transport layer by inkjet printing system to form a perovskite film. The perovskite film was then annealed on a heating stage at 120°C for 20 min to obtain a perovskite absorber layer with a thickness of 0.5-1.5 μm.

[0116] The distance between the nozzle of the inkjet printing system and the crystalline silicon base cell is 8mm, and the advance speed of the inkjet printing system is 0.001mm / min.

[0117] Comparative Example 2 The perovskite / crystalline silicon tandem solar cell of Comparative Example 2 was prepared according to the fabrication method of the perovskite / crystalline silicon tandem solar cell provided in Example 1. The difference is that in step S32, a spraying method is used to spray the perovskite precursor solution onto the surface of the hole transport layer through an electrospray system to form a perovskite thin film. The distance between the crystalline silicon bottom cell and the nozzle of the electrospray system is 30 mm, the voltage of the electrospray system is set to 10 kV, and the propulsion speed is 0.002 mm / min. Nitrogen gas is not blown into the perovskite precursor solution during the deposition process.

[0118] The details are as follows: S32. Dissolve 88.3 mg cesium iodide, 233.9 mg formamidine iodide, 187.2 mg lead bromide, and 548.6 mg lead iodide in a mixed solvent of 800 μL DMF and 200 μL DMSO. Filter the solution through a 0.22 μm PTFE filter to obtain FA with a molar concentration of 1.7 mol / L. 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 3. The perovskite precursor solution was sprayed onto the surface of the hole transport layer using an electrospray system to form a perovskite film. The perovskite film was then annealed on a heating stage at 120°C for 20 minutes to obtain a perovskite absorber layer with a thickness of 0.5-1.5 μm. The distance between the crystalline silicon bottom cell and the nozzle of the electrospray system was 30 mm. The voltage of the electrospray system was set to 10 kV, and the propulsion speed was 0.002 mm / min.

[0119] Comparative Example 3 The perovskite / crystalline silicon tandem solar cell of Comparative Example 3 was prepared according to the preparation method of the perovskite / crystalline silicon tandem solar cell provided in Example 4. The difference is that the tin oxide solution was sprayed and deposited on the surface of the passivation layer by spin coating to form a film; and nitrogen gas was not blown during the deposition of the tin oxide solution.

[0120] S34. Spin-coat the tin oxide solution onto the surface of the passivation layer at a spin speed of 5krpm for 20s to form a film. After spin-coating, transfer it to a heating plate at 120℃ and anneal for 10min to obtain an electron transport layer with a thickness of 10-20nm. The tin oxide solution is obtained by adding tin oxide to a mixed solvent formed by water and isopropanol (the volume ratio of water to isopropanol is 1:9). The mass-volume concentration of tin oxide in the tin oxide solution is 2 mg / mL, and the particle size of tin oxide is 5-20 nm.

[0121] Performance testing The perovskite / crystalline silicon tandem solar cells provided in Examples 1-5 and Comparative Examples 1-3 of this application were tested under standard test conditions to obtain the open-circuit voltage Voc, fill factor FF, short-circuit current density Jsc, and photoelectric conversion efficiency PCE of the corresponding perovskite / crystalline silicon tandem solar cells. The test results are shown in Table 1.

[0122] The fill factor (FF) used in this paper refers to the ratio of the actual maximum obtainable power (Pm or Vmp × Jmp) to the theoretical (not actually obtainable) power (Jsc × Voc). Therefore, FF can be determined by the following formula: FF = (Vmp × Jmp) / (Jsc × Voc), Where Jmp and Vmp represent the current density and voltage at the maximum power point (Pm), respectively, this point is obtained by changing the resistance in the circuit until J×V reaches its maximum value; Jsc and Voc represent the short-circuit current and open-circuit voltage, respectively. The fill factor is a key parameter for evaluating solar cells. Commercial solar cells typically have a fill factor of approximately 60% or higher.

[0123] The open-circuit voltage (Voc) used in this paper is the potential difference between the anode and cathode of the device under conditions of no external load connection.

[0124] The short-circuit current (Isc) used in this article is the maximum current flowing through the output terminal of a photovoltaic cell or module when it is short-circuited (voltage V=0) under STC conditions.

[0125] The power conversion efficiency (PCE) of solar cells used in this article refers to the percentage of power converted from absorbed light into electrical energy, expressed as a percentage (%). The PCE of a solar cell can be measured under standard test conditions (STC) based on incident light irradiance (E: W / m²). 2 ) and the surface area of ​​solar cells (Ac:m 2 The STC is calculated by dividing by the point of maximum power (Pm). STC typically refers to the value at a temperature of 25°C and an irradiance of 100 W / m². 2 The spectrum of air quality 1.5 (AM1.5).

[0126] Table 1 provides test data for the perovskite / crystalline silicon tandem solar cells provided in Examples 1-5 and Comparative Examples 1-3.

[0127] Table 1

[0128] As shown in Table 1 above, the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cells provided in Examples 1-5 is 31.33%-33.68%, which is significantly higher than the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cells provided in Comparative Examples 1-3 (24.96%-28.99%).

[0129] As shown in Table 1 above, compared to Example 1, the perovskite / crystalline silicon tandem solar cell fabrication method in Comparative Example 1 uses inkjet printing. The inkjet printing system sprays a solution to deposit a perovskite precursor solution onto the surface of the hole transport layer to form a perovskite thin film. Since nitrogen gas is not blown during the deposition process, the photoelectric conversion efficiency of the obtained solar cell decreases from 32.4% to 28.13%, and the fill factor decreases from 81.33% to 72.9%. This demonstrates that using inkjet printing to blow nitrogen gas during the deposition process improves the uniformity and density of the perovskite thin film, enhances charge transport efficiency, and further improves the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0130] As shown in Table 1 above, compared to Example 3, the perovskite / crystalline silicon tandem solar cell fabrication method provided in Comparative Example 2 uses a spraying method. The perovskite precursor solution is sprayed onto the surface of the hole transport layer using an electrospray system, and a perovskite thin film is deposited on the surface of the hole transport layer. Since nitrogen gas is not blown during the deposition process of the perovskite precursor solution, the photoelectric conversion efficiency of the obtained solar cell decreases from 33.68% to 28.99%, and the fill factor decreases from 83.64% to 74.3%. This demonstrates that using a spraying method with nitrogen gas blowing during the deposition process of the perovskite precursor solution can improve the uniformity and density of the perovskite thin film, enhance charge transport efficiency, and further improve the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0131] As shown in Table 1 above, compared with Example 4, in the preparation method of the perovskite / crystalline silicon tandem solar cell provided in Comparative Example 3, a spin-coating method is used to spray and deposit tin oxide solution onto the surface of the passivation layer; nitrogen gas is not blown during the deposition of the tin oxide solution; the photoelectric conversion efficiency of the obtained solar cell decreases from 32.7% to 24.96%, and the fill factor decreases from 81.93% to 65.45%. It can be seen that the spraying method used in Example 4, which uses an electrospray system to spray and deposit tin oxide solution onto the surface of the passivation layer, and blowing 85°C nitrogen gas during the deposition of the tin oxide solution, can improve the charge collection efficiency of the electron transport layer and further improve the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0132] As shown in Table 1 above, compared to Example 1, the perovskite / crystalline silicon tandem solar cell fabrication method in Example 2 involves drying the perovskite thin film in an infrared drying region at 120°C for 30 seconds, followed by annealing on a heating stage at 120°C for 20 minutes to obtain the perovskite absorber layer. Compared to Example 1, the perovskite / crystalline silicon tandem solar cell provided in Example 2 exhibits an increased photoelectric conversion efficiency from 32.4% to 33.64%, and a higher fill factor from 81.33% to 83.74%. This demonstrates that infrared drying followed by annealing after perovskite film deposition further optimizes the crystallinity of the perovskite film, improves charge transport efficiency, and ultimately enhances the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0133] As can be seen from Table 1 above, compared with Example 1, the perovskite / crystalline silicon tandem solar cell preparation method provided in Example 3 adopts a spraying method. The perovskite precursor solution is sprayed and deposited on the surface of the hole transport layer through an electrospray system, and a perovskite thin film is deposited on the surface of the hole transport layer. During the deposition process, the perovskite precursor solution is blown with nitrogen air at 60°C by an air knife, and the direction of the air knife is at a 60° angle to the horizontal plane of the crystalline silicon bottom cell. Compared to Example 1, the perovskite / crystalline silicon tandem solar cell provided in Example 3 showed an increase in photoelectric conversion efficiency from 32.4% to 33.68%, a fill factor from 81.33% to 83.64%, and a short-circuit current from 20.07 to 20.23. This demonstrates that spraying the perovskite precursor solution onto the surface of the hole transport layer using a spraying method, and blowing 60°C nitrogen gas through an air knife during the deposition process, can improve the uniformity and density of the perovskite film, enhance light absorption, increase charge transport efficiency, and further improve the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0134] As shown in Table 1 above, compared to Comparative Example 1, the perovskite / crystalline silicon tandem solar cell fabrication method provided in Example 5 uses a spraying method. Silver nanowire solution is sprayed and deposited onto the surface of the antireflective layer using an electrospray system to form the first grid line. During the deposition process, the silver nanowire solution is blasted with 100°C nitrogen gas using an air knife. Compared to Comparative Example 1, the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell obtained in Example 5 increased from 28.13% to 31.33%, the fill factor increased from 72.9% to 78.87%, and the short-circuit current increased from 19.51 mA / cm² to 20.02 mA / cm². This demonstrates that blasting 100°C nitrogen gas using an air knife during the deposition process improves the uniformity of the first grid line, enhances charge transport efficiency, and further improves the photoelectric conversion efficiency of the perovskite / crystalline silicon tandem solar cell.

[0135] This application embodiment can also provide a photovoltaic module (not shown), which includes the perovskite solar cell described above. The perovskite solar cell can be connected in series and / or in parallel with one or more other solar cells in a predetermined manner. Multiple cells can form a cell string, and adjacent cells can be connected together by string welding.

[0136] It should be noted that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," etc., are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. The directional terms "inner" and "outer" refer to the inside or outside relative to the outline of the component itself. For example, if a device in the drawings is inverted, a device described as "above" or "on top of" other devices or structures will subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein are interpreted accordingly.

[0137] It should also be noted that, in this application, the terms "one embodiment," "another embodiment," or "embodiment," etc., refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0138] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0139] It should also be noted that the above are merely preferred embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, Includes the following steps: A conductive substrate is provided, wherein a first carrier transport layer is disposed on one surface of the conductive substrate; A perovskite precursor solution is deposited on the surface of the first carrier transport layer away from the conductive substrate to form a perovskite thin film; the perovskite thin film is then annealed to form a perovskite absorber layer. During the film-forming process, a protective gas is introduced into the environment from the perovskite precursor solution, and the gas flow of the protective gas forms an acute angle with the surface of the first carrier transport layer.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The perovskite film is dried at 100-130℃ for 20-60 seconds and then annealed to obtain a perovskite absorber layer.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The temperature of the protective gas is 50-70℃, and the pressure of the protective gas is 0.1-0.5MPa.

4. The method for preparing a perovskite solar cell according to any one of claims 1-3, characterized in that, The perovskite precursor solution is deposited on the surface of the first carrier transport layer by inkjet printing or electrostatic spraying.

5. The method for preparing a perovskite solar cell according to any one of claims 1-3, characterized in that, It also includes setting a passivation layer on the surface of the perovskite absorber layer; A second carrier transport material solution is formed on the surface of the passivation layer away from the conductive substrate, and then annealed to form the second carrier transport layer. During the film formation process, a protective gas is introduced into the environment from the second carrier transport material solution, and the gas flow of the protective gas forms an acute angle with the surface of the passivation layer.

6. The method for preparing a perovskite solar cell according to claim 5, characterized in that, The temperature of the protective gas is 70-90℃.

7. The method for preparing a perovskite solar cell according to claim 1, characterized in that, It also includes a passivation layer, an electron transport layer, a blocking layer, a transparent conductive layer, and an anti-reflection layer sequentially disposed on the surface of the perovskite absorption layer away from the conductive substrate; A silver nanowire solution is deposited on the surface of the antireflective layer away from the conductive substrate, and then annealed to obtain the first gate line. A second gate line is obtained by printing silver paste on the first gate line, and after heating and curing, a top electrode is obtained by stacking the first gate line and the second gate line. During the film-forming process of the silver nanowire solution, a protective gas is introduced into the environment, and the gas flow of the protective gas forms an acute angle with the surface of the anti-reflective layer.

8. The method for preparing a perovskite solar cell according to claim 7, characterized in that, The temperature of the protective gas is 90-105℃.

9. A perovskite solar cell, characterized in that, The perovskite solar cell is prepared by the method described in any one of claims 1-8.

10. The perovskite solar cell according to claim 9, characterized in that, This includes perovskite / crystalline silicon tandem solar cells.

11. A photovoltaic module, characterized in that, This includes perovskite solar cells prepared by the method described in any one of claims 1-8, or perovskite solar cells as described in claim 9 or 10.

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