Silicon-carbon composite material, preparation method and application thereof

By in-situ growing single-walled carbon nanotubes and filling them with spherical conductive carbon black in porous carbon materials, a conductive framework and nodes are formed, solving the electron transport problem in silicon-carbon composite materials during high-rate charge and discharge processes. This achieves full coverage of the conductive network and improves the rate performance and cycle stability of the material.

CN122417834APending Publication Date: 2026-07-17SHENZHEN HIGHPOWER TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN HIGHPOWER TECH CO LTD
Filing Date
2026-04-29
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing silicon-carbon composite materials have insufficient electron transport rate during high-rate charge and discharge, resulting in reduced capacity and poor cycle stability. Furthermore, the conductive network inside the porous carbon is not fully covered, affecting the requirements of high-end applications.

Method used

A conductive framework is formed by in-situ growth of single-walled carbon nanotubes in the pores of porous carbon, and spherical conductive carbon black is filled in the conductive framework to form a continuous transport path through micropores, mesopores and macropores. The spherical conductive carbon black and single-walled carbon nanotubes form multi-point contact to achieve full coverage of the conductive network, and nano-silicon is deposited on the conductive framework.

Benefits of technology

It improves the rate performance and cycle stability of silicon-carbon composite materials, promotes full coverage of the conductive network in the porous carbon channels, reduces the disconnection between nano-silicon and the conductive network, and enhances the high-rate performance and long cycle life of the material.

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Abstract

本申请提供一种硅碳复合材料及其制备方法、应用。上述的硅碳复合材料包括多孔碳、单壁碳纳米管、球形导电炭黑和纳米硅，单壁碳纳米管原位生长于多孔碳的孔道处形成导电骨架，球形导电炭黑填充附着于导电骨架，且球形导电炭黑与导电骨架一并用于沉积纳米硅。上述的硅碳复合材料，能实现多孔碳的孔道内的导电网络的较全面覆盖，进而能较好地提高硅碳复合材料的倍率性能与循环稳定性。
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Citation Information

Patent Citations

  • Porous carbon few-walled carbon nanotube silicon nano composite material and preparation and application methods thereof

    CN118352507A