A dual-wavelength laser
By using a dual-wavelength semiconductor laser with an external cavity structure, combined with on-chip integration technology and temperature control, the problems of power instability and system complexity of existing dual-wavelength lasers have been solved, achieving stable output of highly coherent dual-wavelength lasers, which are suitable for high-frequency microwave signal generation and terahertz wave applications.
Patent Information
- Application Number
- CN202610548098.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-23
- Publication Date
- 2026-07-17
AI Technical Summary
Existing dual-wavelength lasers suffer from problems such as unstable power, complex systems, large size, low conversion efficiency, and susceptibility to external influences, which limit their widespread adoption in industrial and high-precision scientific applications.
A dual-wavelength semiconductor laser with an external cavity structure includes a gain medium, an optical resonant cavity, a mode converter, and an optical filter. High coherence dual-wavelength laser output is achieved through on-chip integration technology. The laser's operating temperature is kept stable by utilizing the four-wave mixing nonlinear effect within the optical resonant cavity and combining it with a temperature controller.
It achieves stable output of dual-wavelength lasers, reduces noise photon density, improves frequency stability and phase noise performance, simplifies system structure, reduces cost, and is suitable for on-chip integration and high-frequency microwave signal generation, terahertz wave and laser ranging, and other fields.
Smart Images
Figure CN122418418A_ABST