High-bias-voltage-tolerant single-photosensitive-material organic photoelectric detector and preparation method thereof

By connecting a single-component photosensitive unit and an optical-optical gain-variable resistor unit in series, the problems of dark current surge and low photoresponse in single-component organic photodetectors under high bias voltage are solved, achieving stable operation and high photocurrent under high bias voltage, and improving external quantum efficiency and detectivity.

CN122458593APending Publication Date: 2026-07-24TIANFU JIANGXI LAB
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Patent Information

Application Number
CN202610340980.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-19
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

Existing single-component organic photodetectors exhibit extremely low photoresponse at low bias voltages, while at high bias voltages, dark current surges or even breaks down, rendering them unable to function properly and making it difficult to achieve a balance between high photocurrent and high external quantum efficiency.

Method used

A single-component photosensitive unit and a photo-optical gain-variable resistor unit are connected in series. The nonlinear impedance characteristics of the photo-optical gain-variable resistor unit are utilized to suppress dark current with high impedance in the dark state and promote exciton dissociation and charge transport with low impedance under illumination. Combined with a specific molecular configuration and a non-fullerene acceptor material with high quadrupole moment, it assists in exciton dissociation and improves the recombination efficiency of photogenerated carriers.

Benefits of technology

It operates stably under high reverse bias voltages from -4 V to -10 V, with dark current density controlled at the order of 10-7 A/cm2. The photoresponsivity and external quantum efficiency are significantly improved, and the device maintains stability and achieves high photocurrent under high bias voltage.

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Abstract

The invention relates to the technical field of optoelectronic devices and organic semiconductors, in particular to a high-bias-tolerance single-photosensitive-material organic photoelectric detector and a preparation method thereof, and is technically characterized in that a single-component organic thin film is adopted as a single-component photosensitive unit and is connected in series with an optical-optical gain variable resistance unit; by adopting a series connection structure of a single-component photosensitive unit and a light-light gain variable resistance unit and utilizing nonlinear impedance characteristics (dark-state high impedance and illumination low impedance) of the light-light gain variable resistance unit, the technical problem that a traditional single-component organic photoelectric detector is incapable of bearing high reverse bias voltage due to dark current surge under high bias voltage is successfully solved; the dark current is still maintained at the magnitude of 10 <-7 > A / cm and is not broken down under the high reverse bias voltage of-4V to-10V, meanwhile, the exciton dissociation efficiency is remarkably improved, the external quantum efficiency which is up to 55% and the detection rate of 1012Jones are achieved, and the narrow-band spectral response and high-sensitivity effects are achieved.
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