A thin film thickness measurement device and method based on a pixel array type silicon detector
Patent Information
- Application Number
- CN202610868581.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-16
- Publication Date
- 2026-08-28
AI Technical Summary
目前常见的薄膜厚度检测技术主要为以下三种，一是基于扫描电子显微镜（Scanning Electron Microscope，SEM）获取对应质量检测样品的高分辨率图像，沿着定义的路径进行测量并自动记录路径上各点的高度信息，将高度信息作为样品厚度信息，但这种方法无法进行自动测量，且测量较为复杂，不能随时进行现场的实时测量
本申请提供了一种基于像素阵列型硅探测器的薄膜厚度测量装置，通过设置X射线发生器生成X射线，并将X射线穿过待测薄膜照射在像素阵列型硅探测器上，同时利用读出电子学和上位机确定对应的X射线能谱，从而通过X射线能谱确定待测薄膜中每一层薄膜的厚度分布；本申请采用X射线能谱对待测薄膜进行厚度测量，充分发挥了像素阵列型硅探测器在电荷收集上的高灵敏度和高分辨率，实现了薄膜厚度的高灵敏度在线检测，以更简便的方式完成薄膜厚度的高精度实时测量，解决了工业上基于像素阵列型硅探测器的薄膜厚度测量方法复杂，测量精度低等问题，在半导体和新能源电池等领域具有广泛的应用前景。
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Figure CN122650865A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of thin film thickness measurement technology, and in particular to a thin film thickness measurement device and method based on a pixel array silicon detector. Background Technology
[0002] Thin film thickness and uniformity testing technology is a key quality control aspect in fields such as semiconductors, new energy, and optical coatings. In the new energy field, the uniformity of separator thickness (e.g., ±0.1 μm) in lithium-ion batteries directly affects ion transport rates and battery safety. In the semiconductor field, thin film thickness significantly alters parameters such as resistance and dielectric constant of electronic devices; when the thickness falls below a critical value, interface states and quantum tunneling effects can lead to abnormal resistance or short circuits. In the field of optical coatings, the thickness of optical thin films determines transmission, reflection, and absorption characteristics.
[0003] As thin film materials evolve towards ultrathinness and functional integration, traditional testing methods face increasing challenges in terms of accuracy, efficiency, and applicability. Currently, common thin film thickness measurement technologies mainly fall into three categories: First, using a scanning electron microscope (SEM) to acquire high-resolution images of the sample for quality testing, measuring along a defined path and automatically recording the height information at each point on the path, using this height information as the sample thickness. However, this method cannot be automated, is complex, and cannot perform real-time on-site measurements. Second, using the FP cavity formed by the front and rear surfaces of the separator to measure the separator thickness. However, this method cannot meet the needs of real-time measurement on the production line. Third, using algorithm calibration to achieve dynamic noise reduction. This method allows laser sensors to measure the thickness of any coating length in lithium batteries on-site and in real-time. However, the use of lasers requires periodic calibration and is significantly affected by ambient light interference, resulting in insufficient stability. In addition, existing technologies also use fixed high and low thresholds (4keV, 8keV) of photon technology detectors to divide the X-ray energy spectrum into two energy segments, and calculate the surface density of the stacked material by statistically counting the photons at both ends. However, the low-energy segment photon penetration is weak, which can easily lead to signal loss.
[0004] Therefore, based on the above problems, there is an urgent need to provide a new thin film thickness measurement device based on a pixel array silicon detector, which can achieve high-precision measurement of thin film thickness. Summary of the Invention
[0005] The purpose of this application is to provide a method, apparatus, device, medium, and product for measuring thin film thickness based on a pixel array silicon detector, which can achieve high-precision measurement of thin film thickness.
[0006] To achieve the above objectives, this application provides the following solution: In a first aspect, this application provides a thin film thickness measurement device based on a pixel array silicon detector, comprising: an X-ray generator, a thin film fixing module, a pixel array silicon detector, readout electronics, and a host computer; The thin film fixing module is used to fix the thin film to be tested; the thin film to be tested is a multilayer thin film. The X-ray generator is used to generate X-rays; the X-rays pass through the thin film under test and irradiate the pixel array silicon detector. The pixel array silicon detector is used to convert X-rays into electrical signals; The readout electronics are used to condition the electrical signal to obtain a conditioned signal; The host computer is used to determine the corresponding X-ray energy spectrum based on the conditioned signal; and to determine the thickness distribution of each layer of the thin film under test based on the X-ray energy spectrum.
[0007] Optionally, the X-ray generator, the thin film fixing module, and the pixel array silicon detector are arranged on the same axis.
[0008] Optionally, the energy range of the X-rays is 1keV-10keV.
[0009] Optionally, the film to be tested is a polyolefin film, a single or multilayer composite material, or a coated structure film.
[0010] Optionally, the modes of the thin film fixing module include: static mode and dynamic mode; The static mode refers to the film fixing device being set to a stationary position. The dynamic mode is that the film fixing device moves horizontally at a constant speed within a preset range.
[0011] Optionally, the pixel array silicon detector includes: a control module, a pixel array, a data processing module, and a power supply module; The control module is used to configure the state of the pixel array silicon detector; The pixel array is used to receive X-rays and convert the X-rays into electrical signals; The data processing module is used to summarize the electrical signals; The power supply module is used to supply power to the control module, pixel array, and data processing module.
[0012] Optionally, the pixel array silicon detector is a photodetector.
[0013] Optionally, the readout electronics include: a pre-signal processing module, a core processor, a communication interface module, and a peripheral power supply module; The pre-processing unit is used to pre-process the electrical signal to obtain a pre-processed digital signal. The core processor is used to condition the pre-processed digital signal to obtain a conditioned signal; The communication interface module is used to communicate with the pixel array silicon detector and the host computer, respectively. The peripheral power supply module is used to power the pixel array silicon detector.
[0014] Secondly, this application provides a thin film thickness measurement method based on a pixel array silicon detector, comprising: A pixel array silicon detector is irradiated with X-rays of different energy spectrum distributions; and the corresponding X-ray energy spectrum data pairs are determined using readout electronics and a host computer; the X-ray energy spectrum data pairs include: X-ray energy spectrum passing through the film under test and X-ray energy spectrum not passing through the film under test; Based on X-ray energy spectroscopy data and the Lambert-Beer law, the thickness distribution of each layer of the thin film under test is determined, and the thickness is measured. The film under test is moved and its thickness is measured multiple times. The thickness uniformity of each layer of the film under test is determined based on the thickness measurement results.
[0015] Optionally, the step of determining the thickness distribution of each layer of the thin film under test based on X-ray energy spectrum data and the Lambert-Beer law, and then performing thickness measurement, specifically includes: Using formula and formula Determine the thickness distribution of each layer of the thin film to be tested; in, For the first X-ray energy flux passing through the thin film under test For the first X-ray energy flux that does not penetrate the film under test The multiplication symbol is used. Number the number of thin film layers to be tested. The number of thin film layers, It is a constant. For the first Thin film in energy The linear attenuation coefficient below, For the first The thickness of the thin film, For observed variables, , For multilayer thin films to the first The total logarithmic attenuation of the X-rays , The coefficient matrix, For thickness vectors, , This represents the total number of X-ray types.
[0016] According to the specific embodiments provided in this application, this application has the following technical effects: This application provides a thin film thickness measurement device based on a pixel array silicon detector. An X-ray generator is used to generate X-rays, which are then passed through the thin film under test and irradiated onto the pixel array silicon detector. Simultaneously, readout electronics and a host computer determine the corresponding X-ray energy spectrum, thereby determining the thickness distribution of each layer of the thin film under test. This application uses X-ray energy spectroscopy to measure the thickness of the thin film under test, fully leveraging the high sensitivity and high resolution of the pixel array silicon detector in charge collection. It achieves high-sensitivity online detection of thin film thickness, enabling high-precision real-time measurement of thin film thickness in a simpler way. This solves the problems of complexity and low accuracy in industrial thin film thickness measurement methods based on pixel array silicon detectors, and has broad application prospects in the fields of semiconductors and new energy batteries. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is a schematic diagram of a thin film thickness measurement device based on a pixel array silicon detector according to an embodiment of this application; Figure 2 This is a schematic diagram illustrating the process of energy spectrum detection of X-rays of different energies in one embodiment of this application; Figure 3 This is a flowchart illustrating a thin film thickness measurement method based on a pixel array silicon detector in one embodiment of this application. Detailed Implementation
[0019] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0020] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0021] This application does not employ dual-energy X-ray absorption, does not set fixed electron thresholds for energy band segmentation, and does not calculate areal density through dual-energy counting. Instead, it measures the geometric thickness of the thin film by acquiring the complete X-ray energy spectrum and integrating the energy-weighted flux. In an exemplary embodiment, such as... Figure 1 As shown, a thin film thickness measurement device based on a pixel array silicon detector is provided. The thin film thickness measurement device based on a pixel array silicon detector includes: an X-ray generator, a thin film fixing module, a pixel array silicon detector, readout electronics, and a host computer.
[0022] The X-ray generator, thin-film fixing module, and pixel array silicon detector are arranged on the same axis; and the X-ray generator, thin-film fixing module, and pixel array silicon detector are kept in parallel relationship, with the distance between the X-ray generator and the detector adjustable.
[0023] The X-ray generator is used to produce X-rays with different energy spectrum distributions. The X-rays are stable low-energy X-rays with an energy range of 1 keV-10 keV. The radiation intensity of the X-rays can be adjusted and selected automatically. The type of X-ray source is either a radiation source or an X-ray tube. When measuring the thickness of the thin film under test, the X-rays pass through the film and irradiate a pixel array silicon detector.
[0024] Specifically, the X-ray generator (or X-ray source) needs to be perfectly aligned with the collimation aperture, which must be able to project completely onto the effective area of the thin film under test and the pixel array silicon detector; the pixel array silicon detector and the thin film under test need to be placed horizontally to ensure that the X-ray emission intensity remains stable.
[0025] The film fixing module is used to fix the film to be tested. The module has two modes: static and dynamic. In static mode, the film fixing device is stationary; in dynamic mode, the device moves horizontally at a constant speed within a preset range. The film to be tested can be a multilayer film, or a single-layer film depending on the specific requirements. The thickness of the film ranges from submicron to millimeter, and the material can be a polyolefin film, a single or multilayer composite material, or a coated film. During thickness measurement, the film remains horizontal and flat.
[0026] When measuring the thickness of the thin film to be tested, ensure that the X-ray generator, pixel array silicon detector, readout electronics and host computer are fixed, and select the mode of the thin film fixing module according to the actual situation. When performing high-precision thickness measurement or thickness calibration, the thin film fixing module adopts static mode; when performing production line thickness measurement or generating thickness position distribution map in real time, the thin film fixing module adopts dynamic mode.
[0027] Pixel array silicon detectors are photodetectors used to convert X-rays into electrical signals. Specifically, pixel array silicon detectors are high-sensitivity and high-resolution photodetectors fabricated using semiconductor processes. The array distribution of pixel array silicon detectors allows them to independently detect rectangular or strip-shaped pixel units of X-rays and convert them into electrical signals.
[0028] Pixel array silicon detectors selectively integrate analog-to-digital converters (ADCs) to convert the analog charge signals (electrical signals) generated by the corresponding pixel units into digital signals. When the pixel array silicon detector integrates an ADC, its output is a digital signal, and the readout electronics do not require an integrated ADC and amplifier circuit. In this case, the pixel array silicon detector obtains the X-ray energy spectrum distribution through the ADC, rather than using traditional photon threshold counting statistics. When the pixel array silicon detector does not integrate an ADC, its output is an electrical signal, and the readout electronics integrate an ADC and amplifier circuit.
[0029] The pixel array silicon detector includes a control module, a pixel array, a data processing module, and a power supply module. The control module is used to configure the state of the pixel array silicon detector; the pixel array is used to receive X-rays and convert them into electrical signals; the data processing module is used to summarize the electrical signals and transmit the summarized electrical signals to the readout electronics; the power supply module is used to supply power to the control module, pixel array, and data processing module.
[0030] The readout electronics are electrically connected to the pixel array silicon detector (via wire bonding) and are used to condition the digital signal to obtain a conditioned digital signal. The readout electronics include a pre-processing module, a core processor, a communication interface module, and a peripheral power supply module. Specifically, the pre-processing unit pre-processes the electrical signal to obtain a pre-processed digital signal. When the pixel array silicon detector integrates an analog-to-digital converter (ADC), the pre-processing unit converts the digital signal output by the pixel array silicon detector into a digital signal recognizable by the core processor (the pre-processed digital signal). When the pixel array silicon detector does not integrate an ADC, the pre-processing unit integrates an ADC and an amplifier, and converts the electrical signal output by the pixel array silicon detector into a digital signal recognizable by the core processor. The core processor is a Field Programmable Gate Array (FPGA) or Application-Specific Integrated Circuit (ASIC), and it is used to condition the pre-processed digital signal to obtain a conditioned signal. Furthermore, in one exemplary embodiment, the core processor can also control the pixel array silicon detector via a control module. The control signal is transmitted from the host computer to the core processor, and then to the control module of the pixel array silicon detector. A communication interface module is used to communicate with both the pixel array silicon detector and the host computer. An external power supply module supplies power to the pixel array silicon detector. When measuring the thickness of the film under test, electromagnetic interference (EMI) shielding is applied to the readout electronics. Optical fiber is used for signal transmission, and the conditioned signal is uploaded to the host computer (computer or industrial control computer) via gigabit Ethernet communication.
[0031] The host computer is used to determine the corresponding X-ray energy spectrum based on the conditioned signal; and to determine the thickness distribution of each layer of the thin film under test based on the X-ray energy spectrum.
[0032] Specifically, the X-ray energy spectrum determination process is as follows: When the readout electronics start working, X-rays strike the pixel array of the pixel array silicon detector, are absorbed, and generate electron-hole pairs. These pairs are collected by photodiodes inside the pixels, thus converting the X-rays into electrical signals. The electrical signals are conditioned by the readout electronics and uploaded to a host computer. The host computer extracts the time and amplitude information from the conditioned signal and performs appropriate binning and statistical analysis on a large number of X-rays according to their corresponding energy values and accuracy requirements, thereby obtaining the energy spectrum distribution curve (X-ray energy spectrum distribution). The host computer does not set a dedicated electronic threshold for photon counting and segmentation throughout the process. By comparing the changes in the X-ray energy spectrum that penetrates the film under test with those that do not, the film thickness information for the corresponding region of each pixel unit can be obtained.
[0033] Based on the same inventive concept, embodiments of this application also provide a method for measuring the thin film thickness of a pixel array silicon detector, applied to a thin film thickness measurement device, such as... Figure 2 As shown, the thin film thickness measurement method based on a pixel array silicon detector includes S1-S3, wherein: S1: X-rays with different energy distributions are used to irradiate a pixel array silicon detector; and the corresponding X-ray energy spectrum data pairs are determined using readout electronics and a host computer; the X-ray energy spectrum data pairs include: X-ray energy spectrum passing through the film under test and X-ray energy spectrum not passing through the film under test.
[0034] Specifically, without a thin film, the X-ray generator, pixel array silicon detector, and readout electronics are turned on. Simultaneously, the parameters of the readout electronics and pixel array silicon detector are configured and initialized using a host computer. The pixel array silicon detector is irradiated with X-rays of different energy distributions, and the X-ray energy spectrum of the portion not penetrating the film under test is collected over a period of time. This X-ray energy spectrum, unaffected by film attenuation, is used to calibrate the thin film thickness measurement device based on the pixel array silicon detector and serves as a reference for subsequent thickness inversion. After calibrating the thin film thickness measurement device based on the pixel array silicon detector, the film under test is placed relatively horizontally between the X-ray generator and the pixel array silicon detector, ensuring that the test area of the film is located at the center of the collimated X-ray beam. The surface of the film under test is kept flat, and the placement height of the film under test must remain stable. Similarly, the pixel array silicon detector is irradiated with X-rays of different energies, and the X-ray energy spectrum passing through the film under test is collected. This X-ray energy spectrum is affected by film attenuation.
[0035] S2: Based on the X-ray energy spectrum data and the Lambert-Beer law, determine the thickness distribution of each layer of the thin film under test and perform thickness measurement.
[0036] The thickness and thickness uniformity of each pixel of the thin film under test are calculated based on the X-ray energy spectrum data. The relationship between the X-ray energy spectrum passing through the thin film under test and the thickness of the transmitted object follows the Lambert-Beer law. Based on the X-ray energy spectrum data and the thickness information of each pixel, a two-dimensional thickness distribution on the surface of the thin film under test can be generated to evaluate the thickness uniformity of the thin film under test.
[0037] Specifically, when low-energy X-rays penetrate the thin film under test, the energy spectrum attenuation of the X-rays is mainly dominated by the photoelectric effect. During penetration, incident photons, through photoelectric interactions with atoms in the material, have some energy absorbed by the thin film under test, resulting in linear attenuation of the X-rays. Since the Compton scattering cross-section decreases exponentially with decreasing incident photon energy, the broadening effect of Compton scattering on the energy spectrum in the X-ray energy region can be ignored. The energy spectrum distribution of the X-rays after attenuation by the thin film under test can be approximated as the net transmission energy spectrum corrected only by the photoelectric absorption effect. The absorption of X-rays by the thin film under test follows the Lambert-Beer law. For monochromatic X-rays of a specific energy E, the attenuation relationship is as follows: ; in, The X-ray energy flux passing through the thin film under test. This represents the X-ray energy flux that does not penetrate the film under test. The linear attenuation coefficient of the thin film material is related to the energy of the X-ray. The information is solely contributed by the photoelectric effect and can be obtained directly from a known photon cross-section database. is the thickness of the film to be measured, and is the effective thickness obtained based on the average effect of the actual structure of the material.
[0038] In actual measurements, the data obtained is the corresponding energy spectrum. It is the spectral flux at a single energy point, not the energy flux at a single energy point. The spectral flux refers to the total number of photon events passing through a unit area per unit time. It is obtained by weighted integration over energy, rather than by unweighted interval integration over the number of photons. The spectral flux is a scalar value, and the calculation formula is as follows: ; The spectral flux is calculated by multiplying the energy of each photon event by the number of photons in that energy range, and then summing the results over all energy ranges. The spectral flux represents the overall output intensity of X-rays. By statistically analyzing the spectral flux passing through the film under test at each pixel unit within the same fixed time interval, the thickness of the film under test can be obtained through fitting, thus yielding a two-dimensional thickness distribution map of the film surface.
[0039] The thin film to be tested in this application is a multilayer thin film, such as... Figure 3 As shown, X-rays with different energy spectral distributions pass through a thin film under test and irradiate a pixel array silicon detector, and energy spectral detection is performed. The attenuation model of the X-ray energy spectrum passing through the thin film under test is as follows: ; in, For the first X-ray energy flux passing through the thin film under test For the first X-ray energy flux that does not penetrate the film under test , The multiplication symbol is used. Number the number of thin film layers to be tested. Number of thin film layers , It is a constant. For the first Thin film in energy The linear attenuation coefficient below, For the first The thickness of the thin film, This represents the total number of X-ray types.
[0040] Let the multilayer thin film be the first Total logarithmic attenuation of X-rays and define the coefficient matrix. Thickness vector and observed variables The equation can be obtained as follows: ; in, , For matrix The Line number The elements of the column.
[0041] By solving the equation using the least squares method, the thickness of each thin film layer in the thickness vector can be obtained.
[0042] S3: Move the film to be tested and perform multiple thickness measurements, and determine the thickness uniformity of each layer of the film to be tested based on the thickness measurement results.
[0043] Move the position of the film to be tested and repeat the process of S1 and S2. Based on the change in the thickness of each film layer, the thickness uniformity distribution map can be obtained.
[0044] This application combines low-energy X-rays with a high-resolution pixel array silicon detector. By analyzing X-ray energy spectrum data, the thickness of the thin film under test can be measured without relying on optical or mechanical scanning, thus improving the convenience of thickness measurement. Secondly, for thin films with multilayer composite materials or coated structures, this application establishes an attenuation model and matrix equation based on multi-energy X-ray energy spectrum, and calculates the thickness of each layer using the least squares method, thereby improving the calculation accuracy. Furthermore, this application can perform real-time thickness detection in production line environments without complex calibration processes, and is less affected by factors such as ambient light and temperature, making it suitable for online detection in large-scale production and improving its applicability.
[0045] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0046] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.
Claims
1. A thin film thickness measurement device based on a pixel array silicon detector, characterized in that, The thin film thickness measurement device based on a pixel array silicon detector includes: an X-ray generator, a thin film fixing module, a pixel array silicon detector, readout electronics, and a host computer; The thin film fixing module is used to fix the thin film to be tested; the thin film to be tested is a multilayer thin film. The X-ray generator is used to generate X-rays; the X-rays pass through the thin film under test and irradiate the pixel array silicon detector. The pixel array silicon detector is used to convert X-rays into electrical signals; The readout electronics are used to condition the electrical signal to obtain a conditioned signal; The host computer is used to determine the corresponding X-ray energy spectrum based on the conditioned signal; and to determine the thickness distribution of each layer of the thin film under test based on the X-ray energy spectrum.
2. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The X-ray generator, thin film fixing module, and pixel array silicon detector are arranged on the same axis.
3. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The energy range of the X-rays is 1keV-10keV.
4. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The film to be tested is a polyolefin film, a single or multilayer composite material, or a coated film.
5. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The thin film fixing module has two modes: static mode and dynamic mode. The static mode refers to the film fixing device being set to a stationary position. The dynamic mode is that the film fixing device moves horizontally at a constant speed within a preset range.
6. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The pixel array silicon detector includes: a control module, a pixel array, a data processing module, and a power supply module; The control module is used to configure the state of the pixel array silicon detector; The pixel array is used to receive X-rays and convert the X-rays into electrical signals; The data processing module is used to summarize the electrical signals; The power supply module is used to supply power to the control module, pixel array, and data processing module.
7. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The pixel array silicon detector is a photodetector.
8. The thin film thickness measurement device based on a pixel array silicon detector according to claim 1, characterized in that, The readout electronics include: a pre-signal processing module, a core processor, a communication interface module, and a peripheral power supply module; The pre-processing unit is used to pre-process the electrical signal to obtain a pre-processed digital signal. The core processor is used to condition the pre-processed digital signal to obtain a conditioned signal; The communication interface module is used to communicate with the pixel array silicon detector and the host computer, respectively. The peripheral power supply module is used to power the pixel array silicon detector.
9. A method for measuring thin film thickness based on a pixel array silicon detector, applied to the thin film thickness measuring device based on a pixel array silicon detector as described in any one of claims 1-8, characterized in that, The thin film thickness measurement method based on pixel array silicon detectors includes: A pixel array silicon detector is irradiated with X-rays of different energy spectrum distributions; and the corresponding X-ray energy spectrum data pairs are determined using readout electronics and a host computer; the X-ray energy spectrum data pairs include: X-ray energy spectrum passing through the film under test and X-ray energy spectrum not passing through the film under test; Based on X-ray energy spectroscopy data and the Lambert-Beer law, the thickness distribution of each layer of the thin film under test is determined, and the thickness is measured. The film under test is moved and its thickness is measured multiple times. The thickness uniformity of each layer of the film under test is determined based on the thickness measurement results.
10. The thin film thickness measurement method based on a pixel array silicon detector according to claim 9, characterized in that, The process of determining the thickness distribution of each layer of the thin film under test based on X-ray energy dispersive spectroscopy data and the Lambert-Beer law, and then measuring the thickness, specifically includes: Using formula and formula Determine the thickness distribution of each layer of the thin film to be tested; in, For the first X-ray energy flux passing through the thin film under test For the first X-ray energy flux that does not penetrate the film under test The multiplication symbol is used. Number the number of thin film layers to be tested. The number of thin film layers, It is a constant. For the first Thin film in energy The linear attenuation coefficient below, For the first The thickness of the thin film, For observed variables, , For multilayer thin films to the first The total logarithmic attenuation of the X-rays , The coefficient matrix, For thickness vectors, , This represents the total number of X-ray types.