Liquid composition and combustion method of liquid composition

Abstract

[Problem] To provide a composition for use as a developer in photolithography, a fuel for combustion, or the like. [Solution] A composition including a liquid and a metal, wherein the liquid includes one or more substances selected from the group consisting of a fatty acid, a furan derivative, and a turpentine derivative, and the content of the metal is 10 ppb or less.

Description

Technical Field

[0001] Some aspects of the present invention relate to a composition that is liquid under predetermined conditions (e.g., at room temperature and atmospheric pressure) and is used as a chemical liquid, such as a developer used in photolithography processes, or as a fuel for combustion. The present invention also relates to methods for manufacturing devices using the said composition and methods for combusting the said composition. Background Technology

[0002] In advanced semiconductor devices, patterns currently have half-pitches below 20 nm and are formed using a variety of micropatterning processes. Examples of micropatterning processes include double patterning, known as SADP, SAQP, or SAOP; EUV (Extreme Ultraviolet) exposure; electron beam writing; and nanoimprint lithography.

[0003] In double patterning, an NTD (Negative Tone Development) process is used to suppress the roughness of the sidewalls of the resist pattern. In this process, an organic solvent (e.g., butyl acetate, amyl acetate, hexyl acetate, heptyl acetate, octyl acetate, nonyl acetate, anisole, or methyl isobutyl ketone) is used as the developer.

[0004] In EUV exposure, photoresist materials are being replaced by new ones to improve EUV absorption efficiency. Examples of these new photoresist materials include metal oxide resists (MOR) and backbone-breaking resist polymers. In the development of these materials, organic solvents (such as butyl acetate, amyl acetate, hexyl acetate, heptyl acetate, octyl acetate, nonyl acetate, anisole, or methyl isobutyl ketone) are used as developers.

[0005] In electron beam lithography, photoresist materials are being replaced by new photoresist materials to improve their absorption efficiency for electron beams. Essentially, this new photoresist material uses photoresists similar to those used for EUV exposure, and a developer similar to those used for EUV exposure is also used.

[0006] In nanoimprint lithography, a development-like process is performed in which an organic solvent (e.g., butyl acetate, amyl acetate, hexyl acetate, heptyl acetate, octyl acetate, nonyl acetate, anisole, or methyl isobutyl ketone) is applied to promote the removal of residual film and the adhesive film beneath it after the resist pattern is transferred, and to reduce sidewall roughness.

[0007] As disclosed in Japanese Unresolved Patent Publication No. 2018-22141, the aforementioned developer is an organic material (liquid) derived from fossil resources.

[0008] In addition, in order to achieve carbon neutrality, SVO (straight-run vegetable oil) fuels are increasingly being added to fossil fuels and used in cars or jet aircraft.

[0009] Existing technical documents

[0010] Patent documents

[0011] Patent Document 1: Japanese Unresolved Patent Publication No. 2018-22141 Summary of the Invention

[0012] The problem to be solved by the present invention

[0013] The aforementioned developer is an organic material (liquid) derived from fossil resources, and its manufacturing process releases carbon dioxide, an energy source. Furthermore, after the development process, the developer is not collected and reused; instead, it is entirely discarded and burned as industrial waste, releasing carbon dioxide. Moreover, because the reuse of the developer could lead to defective semiconductor devices and increased purification costs, developers manufactured using fossil resources are discarded after a single use.

[0014] Developers inherently play a crucial role in the formation of fine patterns because they influence resolution, roughness, defect initiation, and dimensional variations. However, only a limited number of developers are superior to conventional petroleum-derived developers in the formation of fine patterns.

[0015] The means to solve this problem

[0016] Compositions according to some aspects of the invention comprise a liquid and a metal. The liquid comprises one or more substances selected from the group consisting of fatty acids, furan derivatives, and turpentine derivatives, and the metal content is less than 10 ppb.

[0017] Compositions according to some aspects of the invention comprise a liquid and a plurality of fine particles. The liquid comprises one or more substances selected from the group consisting of fatty acids, furan derivatives, and turpentine derivatives, and each of the plurality of fine particles has a diameter of 0.15 micrometers or more and less than 0.2 micrometers.

[0018] In the above composition, the number of fine particles is preferably 100 particles / cm. 3 the following.

[0019] In the above composition, the viscosity of the composition is preferably below 8 mPa·s.

[0020] In the above composition, the furan derivative is preferably at least one of furfural, furfuryl alcohol, and tetrahydrofurfuryl alcohol.

[0021] In the above composition, the turpentine derivative is preferably at least one of dihydroterpinene acetate and terpinene methyl ether.

[0022] In the above composition, at least one of the fatty acids, furan derivatives and turpentine derivatives is preferably obtained from biological materials.

[0023] In the above composition, the composition is preferably used as a patterning developer in the manufacture of semiconductor devices.

[0024] In the above composition, the composition is preferably liquid at room temperature and atmospheric pressure.

[0025] A method for manufacturing a composition according to some aspects of the present invention includes a filtration step of filtering a material to be purified using a filter to obtain the above-described composition.

[0026] In the method for manufacturing the above composition, the filtration step is preferably a multi-stage filtration step, wherein the material to be purified is passed through two or more filters, the two or more filters being different in at least one aspect selected from the group consisting of filter material, pore size and impurities to be removed.

[0027] A method for manufacturing an apparatus according to some aspects of the present invention includes a composition preparation step for preparing the above-described composition and a photolithography step for performing photolithography, electron beam tracing, or nanoimprint lithography, wherein the composition is used as a developer in the photolithography step.

[0028] In the manufacturing method of the above-mentioned device, the photolithography technique is preferably double patterning photolithography or EUV photolithography.

[0029] The manufacturing method of the above-mentioned apparatus preferably further includes a recycling step of recovering the composition used in the photolithography step after the photolithography step.

[0030] A method for burning a composition according to some aspects of the present invention includes a step of using the composition recovered in the recycling step of the manufacturing method of the above-described apparatus as fuel.

[0031] According to some aspects of the invention, novel liquid compositions can be provided. These liquid compositions are biologically derived materials, rather than materials derived from fossil resources, and can be used for the same purposes in the same manner as conventional developers. For example, the raw materials for the liquid composition are extracted from plants, and the extracted raw materials are filtered, metals are removed, fine particles are removed, etc., to obtain the liquid composition. When this liquid composition is used as a developer for semiconductor devices, it is referred to as a biomass developer. In particular, plants absorb carbon dioxide while growing, thus contributing to carbon neutrality.

[0032] Examples of biomass color developers include: fatty acids, which are components of plant oils extracted from plants; furan derivatives, which are obtained by chemically reacting sugars or plant oils extracted from plants; and turpentine (terpene) derivatives. Such materials are preferably liquids at room temperature and atmospheric pressure, have low viscosity, are capable of dissolving the exposed portions of the resist, and do not readily dissolve the unexposed portions of the resist. Furthermore, after development with a developer, the sidewall roughness (edge ​​roughness) of the fine resist pattern is preferably low, and localized minor defects (failures) in which the fine pattern does not form are preferably few.

[0033] The aforementioned biomass developer includes, for example, any one of plant-derived fatty acids containing linoleic acid, oleic acid, and palmitic acid, plant-derived furan derivatives, and plant-derived turpentine derivatives. The developer preferably has a viscosity of less than 8 mPa·s at room temperature, contains less than 100 fine particles with a diameter of 0.15 micrometers or more and less than 0.2 micrometers, and has a metal content of less than 10 ppb.

[0034] The combustion method of the liquid composition according to this embodiment includes the step of preparing the liquid composition at room temperature and atmospheric pressure. The liquid composition comprises any one of plant-derived fatty acids containing linoleic acid, oleic acid, and palmitic acid, plant-derived furan derivatives, and plant-derived turpentine derivatives, has a viscosity of less than 8 mPa·s at room temperature, contains less than 100 fine particles with a diameter of 0.15 micrometers or more and less than 0.2 micrometers, and has a metal content of less than 10 ppb. The combustion method further includes the steps of using the liquid composition as a developer for double patterning, EUV (extreme ultraviolet) exposure, electron beam lithography, or nanoimprint lithography, and using the liquid composition recovered after use as a developer as fuel. When recovered after development, the liquid composition contains less than 1% of components derived from fossil resources and is a biomass component suitable for use as fuel.

[0035] Advantages of the present invention

[0036] The liquid compositions according to some aspects of the invention have relatively low viscosity and sufficiently low impurity concentration, thus enabling their use as developers in photolithography processes. When the liquid composition is used as a developer, the developer has low viscosity, capable of dissolving the exposed portions of the resist, and not readily dissolving the unexposed portions of the resist. Furthermore, after development using the developer, the sidewall roughness (edge ​​roughness) of the fine resist pattern is small, and there are fewer localized minor defects where the fine pattern does not form. Moreover, during the manufacture and processing of the biomass developer, carbon dioxide emissions are 0.2 kg to 0.5 kg per kilogram of developer, significantly lower than those of conventional developers derived from fossil resources.

[0037] The composition recovered after development is a liquid composition that can be reused as biomass fuel for biomass power generation, biomass fuel for heat sources such as boilers, biojet fuel, etc., and thus greatly contributes to reducing carbon dioxide emissions. Detailed Implementation

[0038] [General Processes for Semiconductor Devices]

[0039] <Dual Patterning>

[0040] In dual patterning, firstly, a resist pattern with a relatively large pitch size is formed, at least twice the target pitch. Next, dry etching is performed to reduce the width of the protruding resist portions to approximately half. Subsequently, a vacuum thin-film deposition method, such as ALD (Atomic Layer Deposition), is applied to the sidewalls of the narrowed protruding resist portions to form a thin film of an inorganic compound, such as SiO2, until the width of the protruding resist portions is restored to approximately its original size. Then, the resist is selectively removed only by dry etching. In this way, a raised / recessed pattern of an inorganic compound with a pitch half the original pitch size is formed.

[0041] Fine patterns are formed by performing this process once or multiple times. Here, after exposure to ultraviolet light with a wavelength of, for example, 193 nm and baking, the biomass developer of this embodiment is used to develop the resist to form an embossed pattern. Chemically amplified resists are representative resists. Chemically amplified resists are prepared by mixing resin, photoacid generator (PAG), and quencher. For example, a resist containing the following structural formula (resin: 83 wt%; PAG: 16.5 wt%; quencher: 0.5 wt%) and PGMEA (propylene glycol monomethyl ether acetate) as a solvent can be used. The biomass developer of this embodiment can be used for development in NTD (negative tone development process).

[0042] resin

[0043] Chemical Formula 1

[0044] PAG

[0045] Chemical Formula 2

[0046] Extinction agent

[0047] Chemical Formula 3

[0048] <EUV exposure and electron beam drawing>

[0049] In EUV exposure, exposure is performed using an EUV scanner (for example, ASML NXE series with a wavelength of 13.5 nm and NA of 0.33, ASML EXE series with a wavelength of 13.5 nm and NA of 0.55, or ASML HYPER series with a wavelength of 13.5 nm and NA of 0.75) to form a resist pattern. A resist capable of forming a pattern after electron beam drawing by development with the biomass developer of the present embodiment is used. A resist capable of forming a pattern by electron beam drawing is developed after EUV exposure, thereby forming a concavo-convex pattern. Metal oxide resist (MOR) or main chain scission type resist is used as a representative resist.

[0050] An organotin oxide hydroxide or an organometallic complex containing the following Chemical Formulas 4 and 5 is used as the MOR. The MOR is dissolved in a solvent (for example, anisole) at about 2% by weight, applied onto a wafer, and baked. After exposure, the MOR is baked and developed with the biomass developer of the present embodiment, thereby forming a pattern.

[0051] Chemical Formula 4

[0052] Chemical Formula 5

[0053] Methyl chloroacrylate / methylstyrene copolymer or the like is used as the main chain scission type resist. About 2% by weight of the copolymer is dissolved in a solvent (such as anisole), applied onto a wafer, and baked. After exposure, the resist is baked and developed with the biomass developer of the present embodiment, thereby forming a pattern.

[0054] In electron beam lithography, metal oxide resists (MOR) or backbone-breaking resists are used for EUV exposure. Interrelation between electron beam lithography and EUV exposure in resist patterning results has been reported, and resists that provide favorable results in electron beam lithography also provide favorable results in EUV exposure.

[0055] Nanoimprint lithography

[0056] In nanoimprint lithography, firstly, a master template (called a stencil) with fine patterns is prepared, and a pattern of a photoresist, which is a UV-curable resin, is transferred and formed from the master template. To form the fine patterns on the stencil, the photoresist applied to the stencil substrate is electron-beam patterned, and then developed using the biomass developer of this embodiment, thereby forming the fine patterns. The photoresist used here is the same as that used for electron-beam patterning. Next, the stencil and a wafer are introduced into a nanoimprint apparatus (manufactured by Canon Inc.), and nanoimprinting is performed.

[0057] After applying a photoresist (UV-curable resin) onto a wafer using methods such as inkjet printing, the stencil surface is brought into contact with and pressed against the photoresist. UV light is then applied to cure the photoresist, and the stencil is separated, thereby transferring a fine pattern onto the wafer. Next, to reduce the thickness (RLT) of the recesses in the photoresist (called residual film) and decrease the roughness of the pattern edges, development is performed using the biomass developer of this embodiment, followed by dry etching to remove the residual film. A free radical-curable photoresist (UV-curable resin) is used as the photoresist. For example, a solvent-free UV-curable photoresist containing fluorene diacrylate (20 wt%), isobornyl acrylate (25%), trimethylolpropane triacrylate (50%), and a polymerization initiator (Irgacure 184) (5%) is used.

[0058] [A composition that is liquid at room temperature and atmospheric pressure; a biomass developer]

[0059] Compositions that are liquid at room temperature and atmospheric pressure and used in the above-mentioned double patterning, EUV (extreme ultraviolet) exposure, electron beam tracing or nanoimprint lithography will be described.

[0060] In the following text, plant oils extracted from plants, etc., will be used as the biomass developer in this embodiment (hereinafter also simply referred to as developer).

[0061] Various fatty acids, furan derivatives, or turpentine derivatives are obtained from fatty acids that are components of vegetable oils, or by chemically reacting sugars or vegetable oils extracted from plants. Specifically, various fatty acids, furan derivatives, or turpentine derivatives are obtained through the following processes.

[0062] For various fatty acids, 100% vegetable oils such as rice bran oil, corn oil, soybean oil, rapeseed oil, coconut oil, castor oil, and sunflower oil are used. These fatty acids (rice bran oil (fatty acid K), corn oil (fatty acid C), soybean oil (fatty acid S), rapeseed oil (fatty acid A), coconut oil (fatty acid Y), castor oil (fatty acid HM), and sunflower oil (fatty acid H)) are obtained by filtering crude vegetable oil (produced by pressing plant materials using an oil press).

[0063] Furfural, furfuryl alcohol, and tetrahydrofurfural are used as furan derivatives. Furfural is obtained by treating D-xylose from corn cobs (manufactured by Okamura Oil Mill Co., Ltd.) with sulfuric acid and further hydrolyzing the treated D-xylose (top part of Formula 6). Furfural is obtained by hydrogenating furfural with water, carbon dioxide, and a highly active supported palladium catalyst (middle part of Formula 6). Tetrahydrofurfural is obtained by hydrogenating furfuryl alcohol with water, carbon dioxide, and a highly active supported palladium catalyst (bottom part of Formula 6).

[0064] Chemical Formula 6

[0065] Dihydroterpinene acetate, isoborneol acetate, dihydroterpinyloxyethanol, and terpinene methyl ether were used as turpentine oil derivatives. To prepare dihydroterpinene acetate, water, bio-based acetyl chloride, and scandium trifluoromethanesulfonate were added to and reacted with turpentine oil (75% pinene and carene) extracted from pine resin to produce terpineol. Terpineol was hydrogenated and esterified with bio-based acetyl chloride to obtain dihydroterpinene acetate. To prepare terpinene methyl ether, water, bio-based acetyl chloride, and scandium trifluoromethanesulfonate were added to and reacted with turpentine oil (75% pinene and carene) extracted from pine resin to produce terpineol. Sulfuric acid and bio-based methanol were added to terpineol to methylate it, thereby obtaining terpinene methyl ether. Commercially available products (turpentine oil derivatives) were used as isoborneol acetate and dihydroterpinyloxyethanol.

[0066] <Filtering>

[0067] When using a composition that is liquid at room temperature and atmospheric pressure as a biomass developer, the composition is filtered. Conditions A to K are set based on the number of filtration operations using fine particle removal filters (filter sizes: 25 nm, 10 nm, and 5 nm), metal removal filters, and fine particle removal filters (filter size: 1 nm). Details of these conditions are as follows.

[0068] Condition A: In the following order (the same applies below), pass through a 25 nm filter once, a 10 nm filter once, a 5 nm filter once, a metal removal filter twice, and a 1 nm filter twice.

[0069] Condition B: Pass through a 25 nm filter once, a 10 nm filter once, a metal removal filter twice, and a 1 nm filter twice.

[0070] Condition C: Pass through a 25 nm filter once, a 10 nm filter once, a 5 nm filter once, a metal removal filter once, and a 1 nm filter twice.

[0071] Condition D: Pass through a 25 nm filter once, a 10 nm filter once, a metal removal filter once, and a 1 nm filter twice.

[0072] Condition E: Pass through a 10 nm filter once, through a metal removal filter once, and through a 1 nm filter twice.

[0073] Condition F: Pass through a 25 nm filter once, a 10 nm filter once, a 5 nm filter once, a metal removal filter once, and a 1 nm filter once.

[0074] Condition G: Pass through a 25 nm filter once, a 10 nm filter once, a metal removal filter once, and a 1 nm filter once.

[0075] Condition H: Pass through a 25 nm filter once, through a metal removal filter once, and through a 1 nm filter once.

[0076] Condition I: Pass through a 25 nm filter once, a 10 nm filter once, a 5 nm filter once, a metal removal filter once, and a 5 nm filter once.

[0077] Condition J: Pass through a 25 nm filter once, a 10 nm filter once, a metal removal filter once, and a 5 nm filter once.

[0078] Condition K: Pass through a 25 nm filter once, through a metal removal filter once, and through a 5 nm filter once.

[0079] Evaluation Results of Biomass Developers

[0080] The evaluation criteria for developers include: viscosity at room temperature, number of fine particles with a diameter greater than 0.15 micrometers and less than 0.2 micrometers, and metal content. The metal elements used to measure metal content are Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Pd, Ag, Cd, In, Sn, Ba, Hf, Ta, W, Os, Ir, Pt, Au, and Pb, and the value of the element with the highest content among these elements is measured.

[0081] The evaluation results of the developer shown in Table 1 were obtained under filtration condition A. Condition A is the most stringent filtration condition described above.

[0082] <Pattern Evaluation Results>

[0083] Table 1 also shows the results obtained through the following process: drawing line / void patterns in the resist by electron beam tracing, developing the resist with each developer, and examining the obtained patterns. Evaluation criteria for the pattern results included: minimum half-pitch (hp) of the formed pattern, amount of development in the unexposed areas, LWR (linewidth roughness), CDU (critical dimension uniformity), and the number of minute defects in which no lines / voids were formed.

[0084] The photoresist used is a copolymer of methyl chloroacrylate / methylstyrene / imide compounds (Mw = 200,000), dissolved in PGMEA as a solvent to a concentration of 2% by weight. The photoresist is applied to a silicon wafer to a thickness of 40 nm, baked, and then patterned using an electron beam tracing apparatus. Subsequently, the photoresist is developed using the biomass developer of this embodiment.

[0085] For advanced semiconductor devices, the minimum power density (hp) is preferably 20 nm or less, the development amount in the unexposed area is preferably 1 nm or less, the light ripple (LWR) is preferably 1 nm or less, the condenser density (CDU) is preferably 1.5 nm or less, and per 1 μm 2 The number of defects is preferably less than 10.

[0086] In Table 1, fatty acids, furan derivatives, or turpentine derivatives that are favorable in all respects of minimum half-pitch, amount of development in unexposed portions, LWR (line width roughness), CDU (critical dimensional uniformity), and the number of tiny defects in which no lines / voids are formed are marked with a double circle (◎) in the determination column; while materials that are unfavorable even in only one evaluation result are marked with a cross (×).

[0087] Table 1

[0088] Table 2 shows the proportions of linoleic acid, erucic acid, oleic acid, palmitic acid, linolenic acid, and stearic acid in fatty acids K, C, S, A, Y, HM, and H.

[0089] Table 2

[0090] A comparison between favorable and unfavorable fatty acids (fatty acids K, C, S, and A) and unfavorable fatty acids (fatty acids Y, HM, and H) shows that favorable fatty acids contain linoleic acid, oleic acid, and palmitic acid. In contrast, it should be understood that each unfavorable fatty acid does not contain at least one of linoleic acid, oleic acid, and palmitic acid.

[0091] In addition, furfural, furfuryl alcohol and tetrahydrofurfuryl alcohol provided favorable results as furan derivatives, and dihydroterpineyl acetate and terpineyl methyl ether provided favorable results as turpentine derivatives.

[0092] <Relationship between evaluation results of biomass developers and pattern evaluation results>

[0093] To evaluate whether there was a correlation between the developer evaluation results and the pattern evaluation results, the filtration conditions were varied. Therefore, fatty acids K and C, furfural, tetrahydrofurfuryl alcohol, terpineyl methyl ether, and dihydroterpineyl acetate were selected, providing favorable pattern evaluation results as shown in Table 1. The filtration conditions were varied to reduce the developer viscosity at room temperature, the number of fine particles in the developer with a diameter greater than 0.15 μm and less than 0.2 μm, and the metal content in the developer, and the effects of these factors on the pattern evaluation results were evaluated. The results are shown in Tables 3 and 4 below.

[0094] Table 3

[0095] Table 4

[0096] These results show that even for the fatty acids (fatty acids containing linoleic acid, oleic acid, and palmitic acid) that provide favorable results in Table 1, furan derivatives (furfural, furfuryl alcohol, and tetrahydrofurfuryl alcohol), and turpentine derivatives (dihydroterpineol acetate and terpineol methyl ether), the pattern evaluation results are unfavorable unless the developer meets all of the following conditions: viscosity is 8 mPa·s or less; the number of fine particles with a diameter of 0.15 μm or more and less than 0.2 μm in the developer is 100 or less; and the metal content in the developer is 10 ppb or less.

[0097] Therefore, in this embodiment, the biomass developer preferably includes any one of fatty acids containing linoleic acid, oleic acid, and palmitic acid, furan derivatives, and turpentine derivatives. Further understood, the biomass developer preferably has a viscosity of 8 mPa·s or less at room temperature, contains 100 or fewer fine particles with a diameter of 0.15 micrometers or more and less than 0.2 micrometers, and has a metal content of 10 ppb or less.

[0098] [Biomass fuel]

[0099] The biomass developer recovered after development can be used as fuel. The biomass fuel recovered after development is also a liquid composition at room temperature and atmospheric pressure.

[0100] The biomass developer according to this embodiment is recovered after development. The recovered biomass developer is used as fuel for an AC 100-V generator driven by a diesel engine (6 kVA, 50Hz, manufactured by Sveaverken). As a result, 100V AC power can be generated without any problems. It has been found that even after use, the developer of this embodiment can be used as a biomass fuel to generate biomass electricity, comparable to SVO fuel.

[0101] Industrial availability

[0102] Plant-derived developers can be used to form favorable fine patterns. Carbon dioxide emissions can be significantly reduced, and the developers can be recovered after use and reused as biomass fuel for biomass power generation, biomass fuel for heat sources such as boilers, biojet fuel, etc. Therefore, even after being used as a developer, the biomass fuel of this embodiment greatly contributes to reducing carbon dioxide emissions.

Claims

1. A composition comprising a liquid and a metal, The liquid comprises one or more substances selected from the group consisting of fatty acids, furan derivatives, and turpentine derivatives, and The content of the metal is less than 10 ppb.

2. A composition comprising a liquid and a plurality of fine particles, The liquid comprises one or more substances selected from the group consisting of fatty acids, furan derivatives, and turpentine derivatives, and Each of the plurality of fine particles has a diameter of more than 0.15 micrometers and less than 0.2 micrometers.

3. The composition of claim 2, wherein the plurality of fine particles is in a quantity of 100 particles / cm 3 The following.

4. The composition according to claim 1 or 2, wherein the viscosity of the composition is below 8 mPa·s.

5. The composition of claim 1 or 2, wherein the furan derivative is at least one of furfural, furfuryl alcohol, and tetrahydrofurfuryl alcohol.

6. The composition of claim 1 or 2, wherein the turpentine derivative is at least one of dihydroterpinene acetate and terpinene methyl ether.

7. The composition of claim 1 or 2, wherein at least one of the fatty acid, the furan derivative, and the turpentine derivative is obtained from biological material.

8. The liquid composition of claim 1 or 2, wherein the composition is used as a patterning developer in the manufacture of a semiconductor device.

9. The composition of claim 1 or 2, wherein the liquid is liquid at room temperature and atmospheric pressure.

10. A method of manufacturing the composition according to claim 1 or 2, the method comprising a filtration step of filtering a material to be purified using a filter to obtain the composition.

11. The method of manufacturing the composition of claim 10, wherein the filtration step is a multi-stage filtration step, wherein the material to be purified is passed through two or more filters, the two or more filters being different in at least one aspect selected from the group consisting of filter material, pore size and impurities to be removed.

12. A method for manufacturing an apparatus, the method comprising: The composition preparation steps for preparing the composition according to claim 1 or 2; as well as The photolithography steps include photolithography, electron beam tracing, or nanoimprint lithography. The composition is used as a developer in the photolithography step.

13. The method of manufacturing the device as claimed in claim 12, wherein the photolithography is a double patterning photolithography or an EUV photolithography.

14. The method of manufacturing the apparatus of claim 12, further comprising a recycling step of recovering the composition used in the photolithography step after performing the photolithography step.

15. A method of combustion of a composition, the method comprising the step of using the composition recovered in the recycling step of the method for manufacturing the device of claim 14 as fuel.

Images