Near-infrared medical area light source

Abstract

The utility model discloses a near-infrared medical area light source. The medical area light source comprises a vertical cavity surface emitting laser chip, a packaging substrate, a radiator, a fan and an optical assembly, the vertical cavity surface emitting laser chip comprises an upper distributed Bragg reflector (P-DBR), an active region and a lower distributed Bragg reflector (N-DBR), the vertical cavity surface emitting laser array emits light in a top emitting mode, the emitted laser beam is a circular light spot, an angle of about 12 + / -3 degrees is formed between the outer edge of the light beam and the perpendicular bisector of the chip, and the central wavelength of the light emitted by the chip is 810nm, 850nm or 940nm; near-infrared light chips which are used for indicating the working state of a light source and have the wavelength of red light or emit weak visible light are arranged at certain positions of the vertical cavity surface emission near-infrared laser chip array. The chip for indicating the working state is placed at the edge or the center of the pattern; one or more layers of diffusion plates are arranged above the near-infrared chip, and uniform near-infrared light emission can be obtained above the diffusion plates.

Description

Technical Field

[0001] This utility model belongs to the field of medical and health care and rehabilitation equipment, and particularly relates to a near-infrared medical surface light source. Background Technology

[0002] Infrared radiation is invisible light, with a wavelength range of 760 nm to 15 μm in the electromagnetic spectrum. Currently, medical infrared radiation is divided into two segments: short-wave infrared (also known as near-infrared, wavelength 760 nm to 1.5 μm) and long-wave infrared (including mid-infrared and far-infrared, wavelength 1.5 μm to 15 μm). As the wavelength of light increases (i.e., the photon energy decreases), its ability to penetrate human tissue gradually increases. Because near-infrared radiation penetrates deeper into human tissue, near-infrared therapy is more effective for soft tissue contusions (such as pathological damage to the skin, superficial and deep fascia, muscles, tendons, tendon sheaths, ligaments, joint capsules, synovial bursae, intervertebral discs, and peripheral nerves and blood vessels). Its mechanism of action is as follows:

[0003] It causes vasodilation, accelerated blood flow, improved local blood circulation, and enhanced tissue nutrition and metabolism; it also accelerates the absorption of local exudates and promotes the reduction of swelling.

[0004] It reduces the muscle tone of skeletal muscles, relaxes the smooth muscles of the gastrointestinal tract, and relieves muscle spasms.

[0005] It reduces sensory nerve excitation and raises the pain threshold. Simultaneously, improvements in blood circulation, relief from ischemia and hypoxia, absorption of exudates, reduction of swelling, and relief of spasms contribute to the analgesic effect.

[0006] Near-infrared therapy also has advantages in terms of safety. Because long-wave infrared devices generate a lot of heat during use, these devices require operation by a specialist, and patients are prone to burns when using similar home-use devices.

[0007] The Chinese utility model patent application of this utility model person, "A Short-Wave Infrared Integrated Medical Light Source and Its Application" (application number: 202010521887.4), discloses a short-wave infrared integrated medical light source packaged by a certain process, and proposes a short-wave infrared integrated medical light source system for medical and home rehabilitation treatment equipment with a vertical cavity surface emission laser chip array. The Chinese Utility Model Patent Application No. 202111111414.8 and the Utility Model Patent Application No. 202122310909.5 disclose a dual-path near-infrared integrated medical light source, comprising a packaging substrate, a vertical cavity surface-emitting near-infrared laser chip group, a red LED chip group, dual-path substrate electrodes, substrate positioning holes, and a lens group; the packaging substrate is covered with a high-strength thermally conductive and insulating thin film material, and the electrical connection circuit of the near-infrared laser chip group and the red LED chip group is prepared on the insulating and thermally conductive thin film; the lens group images the light emission image of the vertical cavity surface-emitting near-infrared laser chip packaged on the substrate at 15±10cm in front of the light outlet of the light source system.

[0008] The above-mentioned near-infrared medical light sources have certain limitations in their use. For example, the use of lenses results in a larger size and weight of the light source. Furthermore, due to the focusing effect of the lenses, the light power density near the central axis of the light source's output port is greater than that in other areas. The further away from the central area, the lower the power density.

[0009] In view of the technical difficulties and shortcomings in the use of existing near-infrared therapeutic light sources, this utility model discloses a near-infrared medical surface light source. Summary of the Invention

[0010] The purpose of this utility model is to address the technical difficulties and shortcomings encountered in the field of existing near-infrared therapeutic light sources. This utility model proposes a near-infrared medical surface light source, which is an improvement on our original medical near-infrared light source utility model, thereby reducing the size and weight of the medical light source and improving the radiation uniformity of the medical near-infrared light source.

[0011] The technical solution of this utility model is that the medical surface light source includes the following components: a vertical cavity surface-emitting laser chip (array), a packaging substrate, a heat sink, a fan, and optical components;

[0012] The vertical-cavity surface-emitting laser (VCSEL) chip comprises three parts: an upper distributed Bragg reflector (P-DBR), an active region, and a lower distributed Bragg reflector (N-DBR). The active region is made of GaInAs / GaAs material. The VCSEL array emits light from the top, and the emitted laser beam is a circular spot with its outer edge forming an angle of approximately 12±3° with the vertical axis of the chip.o The center wavelength of the light emitted by the chip is approximately 810 nm, 850 nm, or 940 nm, with 940 nm being the preferred wavelength; the optical power range of a single vertical cavity surface-emitting laser chip is 0.1-1 W.

[0013] The near-infrared medical surface light source may contain multiple vertical-cavity surface-emitting near-infrared laser chips, the specific number of which is determined by the total optical power designed for the light source. The near-infrared medical surface light source contains an integrated vertical-cavity surface-emitting near-infrared laser chip array. At certain positions of the vertical-cavity surface-emitting near-infrared laser chip array, chips with wavelengths of red light or emitting weakly visible near-infrared light are also placed to indicate the working status of the light source. The wavelength range is 600nm-820nm, such as an 808nm vertical-cavity surface-emitting near-infrared laser chip or an LED chip within this wavelength range. The chips for indicating the working status are placed at the edge or center of the pattern, and the number can be one or more. One or more diffuser plates are set above the near-infrared chip array, so that uniform near-infrared light emission can be obtained above the diffuser plates.

[0014] The near-infrared medical surface light source may contain multiple vertical cavity surface-emitting near-infrared laser chips. The specific number is determined according to the total optical power designed for the light source. Therefore, the near-infrared medical surface light source contains an integrated vertical cavity surface-emitting near-infrared laser chip array.

[0015] The multiple vertical cavity surface-emitting near-infrared laser chips can be arranged in a square outline, a rectangular outline, a near-circular outline, or any planar shape in the chip packaging area (light-emitting area) of the substrate 2.

[0016] The encapsulation substrate is primarily made of high thermal conductivity ceramic material or copper plate, preferably copper; the substrate is rectangular or square; the substrate thickness ranges from 1mm to 5mm; a high-strength thermally conductive insulating film is covered on the substrate, and a chip electrical connection circuit is fabricated on the thermally conductive insulating film, which is covered with a high-strength insulating film; positive and negative electrode areas for connecting the circuit are reserved on the insulating film covering the upper part of the substrate; the central area of ​​the substrate is the placement area for the vertical cavity surface-emitting laser chip; the chip encapsulation area (light-emitting area) of the substrate can be arranged in a square outline, a rectangular outline, a near-circular outline, or any planar shape; positive and negative electrodes are provided at one or both ends of the plane on the substrate where the circuit is printed, for connecting external circuits and powering the near-infrared light source array; positioning holes are also provided on opposite sides of the substrate, and the substrate is fixed to the heat sink at the bottom through the positioning holes with screws.

[0017] Since near-infrared light is invisible to the naked eye, in order to facilitate the operator's observation of the working status of the light source during treatment, chips with wavelengths of red light or emitting weakly visible near-infrared light can be placed at certain positions of the vertical cavity surface-emitting near-infrared laser chip array to indicate the working status of the light source. The wavelength range is 600nm-820nm, such as an 808nm vertical cavity surface-emitting near-infrared laser chip or an LED chip within this wavelength range. The chips for indicating the working status can be placed at the edge or center of the pattern, and the number can be one or multiple.

[0018] The vertical cavity surface-emitting near-infrared laser chip is packaged using the following steps:

[0019] Crystal bonding

[0020] The vertical cavity surface-emitting near-infrared laser chip is fixed in the chip placement area in the center of the substrate according to the designed array pattern; the shape of the chip array can be square, rectangular, circular, or any other arbitrary shape.

[0021] In order to bring out the bottom electrode, a metal pad with good thermal conductivity and electrical conductivity is used as an intermediate contact between the vertical cavity surface emission near-infrared laser chip and the substrate during chip packaging; the metal pad is preferably a gold or aluminum sheet.

[0022] wire bonding

[0023] Vertical cavity surface-emitting near-infrared laser chips can be connected in series to form a series chip group, and the series chip groups can be connected in parallel to form a hybrid chip array; the specific number of chips and electrical connection method depend on the total power of the near-infrared medical light source, the electrical parameters of a single chip, and the external power supply voltage or current.

[0024] The vertical cavity surface-emitting near-infrared laser chips are electrically connected using gold or aluminum wires, ultimately achieving connection with the circuitry on the substrate.

[0025] To prevent soldering failure caused by stress on the electrode leads between the chip and the substrate circuit during subsequent encapsulation and baking processes, an additional silicon wafer can be placed in the blank area of ​​the substrate chip placement area to serve as a soldering transition platform for the electrode leads.

[0026] Injection

[0027] Adhesive is injected into the area where the vertical cavity surface-emitting near-infrared laser chip is placed; the adhesive is a silicone-based adhesive commonly used in LED (light-emitting diode) chip packaging technology; the adhesive has high light transmittance and its shrinkage rate after curing should not be too large, so as not to damage the electrical connection between the vertical cavity surface-emitting near-infrared laser chips.

[0028] bake

[0029] Place the substrate that has been coated with adhesive in an oven to allow the adhesive to cure; the drying temperature and drying time will vary depending on the type of adhesive used.

[0030] The packaging substrate of the near-infrared medical surface light source is mainly made of high thermal conductivity ceramic material or copper plate; the substrate is rectangular or square; the substrate thickness ranges from 1mm to 5mm; a high-strength thermally conductive insulating film material is covered on the substrate, and a chip electrical connection circuit is prepared on the thermally conductive insulating film, which is covered with a high-strength insulating film; positive and negative electrode areas for connecting circuits are reserved on the insulating film covering the upper part of the substrate; the central area of ​​the substrate is the placement area for the vertical cavity surface emission laser chip; the chip packaging area of ​​the substrate is arranged in a square, rectangular, or near-circular outline; positive and negative electrodes are provided at one or both ends of the plane on the substrate where the circuit is printed, for connecting external circuits and powering the near-infrared light source array; positioning holes are also provided on two opposite sides of the substrate, and the substrate is fixed to the heat sink at the bottom through the positioning holes with screws.

[0031] Beneficial effects: Multiple low-power vertical-cavity surface-emitting near-infrared (VCE) chips are integrated and packaged on a thermally conductive ceramic or metal substrate to form a near-infrared chip array. One or more diffuser plates are placed above this near-infrared chip array, resulting in uniform near-infrared light emission in front of the diffuser plates, thus reducing the longitudinal dimension of the near-infrared light source. Without using the applicant's previous optical lenses, this invention improves upon the applicant's existing medical near-infrared light source, thereby reducing the size and weight of the medical light source and improving its radiation uniformity. It should be noted that this medical near-infrared light source is not limited to medical applications and can also be used in other industrial fields, such as security products. Attached Figure Description

[0032] Figure 1 A schematic diagram of the structure of a vertical cavity surface emitter near-infrared laser chip.

[0033] Figure 2 A schematic diagram of a substrate planar structure encapsulating a vertical cavity surface-emitting near-infrared laser chip array.

[0034] Figure 3 A schematic diagram of the planar structure of a near-infrared light source heat sink used to fix the packaging substrate.

[0035] Figure 4 Schematic diagram of the semi-frame support structure.

[0036] Figure 5 Schematic diagram of the planar structure of the diffuser plate. Specific Implementation

[0037] The present invention will now be described in detail with reference to specific embodiments. Example

[0038] The integrated vertical-cavity surface-emitting laser chip packaging structure of Example 1 is as follows: Figure 2 As shown.

[0039] Figure 2 This is a schematic diagram of a substrate planar structure encapsulating a vertical cavity surface-emitting near-infrared laser chip array.

[0040] The substrate 2 for packaging near-infrared light source chips can be made of high thermal conductivity ceramics (such as aluminum nitride) or high thermal conductivity metals, such as copper or aluminum, with copper being preferred.

[0041] The substrate 2 is rectangular or square, and the chip packaging area on one side A of the cuboid used for chip packaging can be rectangular or square. The substrate 2 has a relatively small thickness, ranging from 1mm to 5mm.

[0042] The substrate 2 has a special surface structure on one side A for welding the vertical cavity surface-emitting near-infrared laser chip. The bottom layer of this surface structure is a high thermal conductivity insulating film on which circuitry is fabricated. The top layer of this surface structure is a high thermal conductivity insulating layer, which can be made of the same material as the bottom insulating layer.

[0043] Positive and negative electrodes 6 and 7 are provided at one or both ends of the A side of the substrate 2 where the circuit is printed, for connecting external circuits and supplying power to the near-infrared light source array.

[0044] The substrate 2 is also provided with positioning holes 8 on two opposite sides, through which screws are used to fix the substrate 2 and the heat sink 3. Thermally conductive adhesive is applied between the substrate 2 and the heat sink 3, so that the heat generated when the vertical cavity surface emission near-infrared laser chip is working can be quickly transferred through the substrate to the heat sink 3 and diffused into the air.

[0045] The heat sink 3 has a flat surface, B, for fixing the substrate 2. Positioning holes 9 are provided on the two sides corresponding to surface B for fixing the substrate 2 with screws. Positioning holes 10 are provided at the four corners of the heat sink 3 for fixing the light source to external devices.

[0046] The back of the heat sink 3 is machined with dense serrations, the density of which is designed based on the heat generated by the vertical cavity surface-emitting near-infrared laser chip array during operation.

[0047] The fan 4 is used for air cooling of the heat sink 3. A sheet metal part 11 is also provided between the heat sink 3 and the fan 4 for fixing the fan 4 to the heat sink 3. The sheet metal part 11 is fixed to the heat sink 3 through positioning holes 12 provided on the side of the heat sink 3. The fan 4 is fixed with screws through positioning holes 13 on the sheet metal part 11.

[0048] The optical component 5 includes a bottom support 14 and a diffuser plate 15.

[0049] The support member 14 serves to isolate the vertical cavity surface-emitting near-infrared laser chip array from the diffuser plate 15. It can be made of resin or metal, preferably resin. The support member is semi-frame shaped with a thickness of 2mm-20mm, and its minimum thickness is not less than the thickness of the substrate 2. The optical system 5 includes two support members 14. The support member 14 has positioning holes 16 at the corners of its semi-frame shape, through which it is fixed to the heat sink 3 using screws.

[0050] The diffuser plate 15 is made of resin and primarily serves to homogenize the light, hence the name "light homogenizer." It maintains the intensity of the light source. Diffuser plates can be made of materials such as polycarbonate (PC), polystyrene (PS), polymethyl methacrylate (PMMA), PE, and special PP or PE materials, or even frosted glass with a frosted surface, especially a double-sided frosted structure, or a semi-transparent material. The thickness of the diffuser plate 15 is 1mm-10mm. Its function is to scatter the laser beam emitted by the vertical cavity surface-emitting near-infrared laser chip array, desensitizing it to laser characteristics and simultaneously achieving uniform output light intensity.

[0051] The diffuser plate 15 may have a shape that is substantially the same as the B-side of the heat sink 3, or a shape that is the same as the substrate 2, but it must be ensured that the laser beam emitted by the vertical cavity surface-emitting near-infrared laser chip array will not leak and cause harm to the human body. Positioning holes 17 are provided at the four corners of the diffuser plate 15 corresponding to the heat sink 3. The diffuser plate 15 is fixed to the support member 14 and the heat sink 3 with screws through the positioning holes 17, and is thus mounted on the support member 14.

[0052] The diffuser plate can adopt a single-layer double-sided frosted structure, or a multi-layer single-sided frosted structure, or a combination of single-layer double-sided frosted and multi-layer single-sided frosted structures, in order to obtain more uniform emitted light.

[0053] In the figure, the main material of the packaging substrate is copper, similar to that of a typical LED (light emitting diode) packaging substrate. The light-emitting area on the substrate (used to house the vertical cavity surface-emitting laser integrated chip array) is square with a side length of 22 mm. The substrate includes positive and negative electrodes 6 and 7 for connecting to an external DC power supply, and also includes through holes 8 for fixing to an external heat sink.

[0054] The vertical-cavity surface-emitting laser chip 1 on the substrate emits light at a wavelength of 940 nm. The laser chip array is arranged in a square with a side length of approximately 12 mm. To display the working status of the chip light source, two 780 nm LED beads are placed in the central area. The total number of chips in the integrated chip array is 36, arranged in a 6×6 matrix.

[0055] The chips in the chip array are connected in series in every 3 rows (or columns) of 18 chips, and then the two series-connected chip rows (or columns) are connected in parallel to form an 18-series-2-parallel circuit (hybrid circuit). After that, the positive and negative terminals of the hybrid circuit are connected to the positive and negative terminals reserved on the substrate, respectively.

[0056] A gold pad is placed between the single vertical cavity surface emission laser chip and the substrate. The gold pad is used to contact the bottom electrode of the chip and to lead out the bottom electrode for easy soldering.

[0057] To prevent the electrode leads in the light-emitting area from being subjected to stress during the encapsulation and drying process, which could cause soldering failure or lead breakage, the connection between the electrode leads at both ends of each series-connected chip row (or column) and the substrate electrode adopts a silicon wafer platform transition connection method.

[0058] Adhesive is injected into the area where the vertical cavity surface-emitting laser (VCSEL) chip is placed. The adhesive is a silicone-based adhesive commonly used in LED (light emitting diode) chip packaging technology. The adhesive has high light transmittance and its shrinkage rate after curing should not be too large to avoid damaging the electrical connection between the VCSEL chips.

[0059] Place the glued substrate in an oven to cure the glue; the curing temperature is 150°C. o C, curing time 3 hours.

[0060] The rated operating voltage of a single 940 nm vertical cavity surface-emitting laser chip 1 is 1.9V, the rated current is 200mA, and the luminous power is 355 mW.

[0061] The rated operating voltage of a single 780 nm red LED chip is 1.9 V and the current is 700 mA.

[0062] The integrated chip has a total operating current of 0.8A and a voltage of 35V.

[0063] The light source system includes a heat sink, a fan for cooling the heat sink, and an optical system.

[0064] Figure 3This is a schematic diagram of the planar structure of a near-infrared light source heat sink used to fix the packaging substrate. The heat sink is made of copper and has a planar size of 50mm × 50mm. One side of the copper heat sink is a planar structure for mounting the substrate, and the other side is machined with serrations. To provide forced heat dissipation for the copper heat sink, a 4010 ultra-quiet fan is installed above the heat sink serrations. The fan is mounted on the copper heat sink via sheet metal parts.

[0065] The substrate containing the integrated vertical cavity surface-emitting near-infrared laser chip array is fixed to the heat sink with screws through fixing holes, and thermally conductive adhesive is applied between the copper substrate and the copper heat sink.

[0066] The optical component includes an acrylic support structure with a semi-frame shape measuring 50mm × 20.5mm and a thickness of 5mm. Through holes are located at both corners. Figure 4 As shown.

[0067] The optical assembly includes a diffuser plate made of PS, with a planar dimension of 50mm × 50mm, double-sided roughened, a thickness of 1.5mm, consisting of two layers, and positioning holes at the four corners. Figure 5 As shown.

[0068] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A near-infrared medical facial light source, characterized by, The medical surface light source comprises the following components: A vertical cavity surface emitting laser chip, a packaging substrate, a heat sink, a fan and an optical assembly; The vertical cavity surface emitting laser chip comprises three parts: an upper distributed Bragg reflector (P-DBR), an active region and a lower distributed Bragg reflector (N-DBR); the active region material system is GaInAs / GaAs material; the light emission mode of the vertical cavity surface emitting laser chip adopts a top emission mode, and the emitted laser beam is a circular spot, the outer edge of the beam is about 12±3 o degrees to the median line of the chip, the central wavelength of the light emitted by the chip is 810 nm, 850 nm or 940 nm; the light power range of a single vertical cavity surface emitting laser chip is 0.1-1 W; The near-infrared medical surface light source comprises a plurality of vertical cavity surface emitting laser chips, and the specific number is determined according to the total light power designed by the light source, and is an integrated vertical cavity surface emitting laser chip; a vertical cavity surface emitting near-infrared laser chip or an LED chip in the wavelength range of 600-820 nm, such as an 808 nm vertical cavity surface emitting near-infrared laser chip, is arranged at some positions of the vertical cavity surface emitting laser chip array to indicate the working state of the light source; the working state indication LED chip is arranged at the edge or center of the surface light source pattern, and the number is one or more; a layer or more diffusion plates are arranged above the vertical cavity surface emitting laser array, and uniform near-infrared light emission can be obtained above the diffusion plate.

2. The near-infrared medical facial light source according to claim 1, characterized by, The material of the diffusion plate (15) is resin or ground glass, and the diffusion plate has a frosted surface; the thickness of the diffusion plate is 1-10 mm, which scatters the laser beams emitted by the vertical cavity surface emitting near-infrared laser chip array, so that the laser beams no longer have the characteristics of laser, and uniform light intensity is obtained.

3. The near infrared medical facial light source of claim 1, wherein, The wavelength is 940 nm.

4. The near infrared medical facial light source of claim 1, wherein, The packaging substrate is made of high-thermal-conductivity ceramic material or red copper plate; the substrate is rectangular or square; the thickness of the substrate is 1-5 mm; the substrate is covered with high-strength thermal-conductivity insulating film material, and a chip electrical connection circuit is prepared on the thermal-conductivity insulating film; the positive and negative electrode areas of the connection circuit are reserved on the upper insulating film of the substrate; the central area of the substrate is the placement area of the vertical cavity surface emitting laser chip; the chip packaging area of the substrate is arranged in a square, rectangular or circular contour; one end or both ends of the plane of the substrate printed with the circuit are provided with positive and negative electrodes for connecting external circuits to supply power to the near-infrared light source array; opposite edges of the substrate are also provided with positioning holes for fixing the substrate and the heat sink at the bottom by screws.

5. The near infrared medical facial light source of claim 4, wherein, Thermal-conductivity glue is coated between the substrate and the heat sink, so that the heat generated by the vertical cavity surface emitting near-infrared laser chip during operation can be quickly transmitted to the heat sink through the substrate and then diffused into the air.

6. The near infrared medical facial light source of claim 4, wherein, The heat sink has a flat surface for fixing the substrate; the corresponding two edges of the flat surface are provided with positioning holes for fixing the substrate by screws; the four corners of the heat sink are provided with positioning holes for fixing the light source and external equipment; the back surface of the heat sink is processed with dense teeth, and the density of the teeth is designed according to the heat generated by the vertical cavity surface emitting near-infrared laser chip array during operation.

7. The near infrared medical facial light source of claim 1, wherein, The fan is used for air cooling of the heat sink; a sheet metal part is arranged between the heat sink and the fan for fixing the fan on the heat sink; the sheet metal part is fixed with the heat sink through the positioning holes arranged on the side surface of the heat sink; the fan is fixed by screws through the positioning holes in the sheet metal part.

8. The near infrared medical facial light source of claim 1, wherein, The optical assembly comprises a bottom support and a diffusion plate; the support is used to isolate the vertical cavity surface emitting near-infrared laser chip array and the diffusion plate, and is made of resin or metal; the support is in the shape of a half frame, has a thickness of 2-20 mm, and has a minimum thickness not less than the thickness of the substrate; the optical assembly comprises two supports; the supports are provided with positioning holes at the corners of the half frame, and are fixed to the heat sink by screws through the positioning holes; the diffusion plate is made of polycarbonate PC, polystyrene PS, polymethyl methacrylate PMMA, PE, PP, PE, or ground glass, has a frosted structure or is a translucent material; the diffusion plate has a thickness of 1-10 mm, is used to scatter the laser beams emitted by the vertical cavity surface emitting near-infrared laser chip array, so that the laser beams no longer have the characteristics of laser, and uniform outgoing light is obtained; the diffusion plate has a shape substantially consistent with the plane of the heat sink, or has a shape consistent with the substrate, but it is ensured that the laser beams emitted by the vertical cavity surface emitting near-infrared laser chip array will not leak to cause harm to the human body; the diffusion plate is provided with positioning holes at the four corners corresponding to the heat sink, and is fixed to the supports and the heat sink by screws through the positioning holes; the diffusion plate is arranged on the supports; the diffusion plate adopts a single-layer double-sided frosted structure, a multi-layer single-sided frosted structure, or a combination structure of a single-layer double-sided frosted structure and a multi-layer single-sided frosted structure, so as to obtain more uniform outgoing light.

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