An etching apparatus
By setting up a liquid flow tank and a liquid flow generator on the etching unit, uniform flow of the etching solution is achieved, solving the problem of uneven etching, improving the performance and quality of silicon wafers, and reducing equipment costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TIANJIN AIKO SOLAR ENERGY TECH CO LTD
- Filing Date
- 2025-04-11
- Publication Date
- 2026-07-07
AI Technical Summary
In existing etching equipment, fluctuations in the surface of the etching solution cause uneven etching of silicon wafers, affecting their performance and quality.
A liquid flow tank is set on the etching unit, and the etching solution flows in from the supply port and out from the drain port through the liquid flow generator to form a uniform flow, ensuring stable contact between the lower surface of the silicon wafer and the etching solution.
It improves etching uniformity, reduces over-etching rate, enhances silicon wafer performance and quality, simplifies device structure, reduces equipment cost and manufacturing difficulty, and facilitates industrial production.
Smart Images
Figure CN224473681U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of solar cell technology, and in particular to an etching device. Background Technology
[0002] A solar cell is a thin photovoltaic semiconductor wafer that generates electricity directly using sunlight. It is also known as a "solar chip" or "photovoltaic cell". As long as the illuminance meets certain conditions, it can instantly output voltage and generate current when there is a circuit.
[0003] Etching is a crucial step in the manufacturing process of solar cells. In existing technologies, etching equipment typically consists of multiple parallel rollers within an etching tank. These rollers continuously transport silicon wafers (semi-finished cells), which float on the surface of the etching solution within the tank. This allows the lower surface of the wafer to come into contact with the etching solution and react, thus achieving the etching process. However, the rotation of the rollers during wafer transport disturbs the etching solution, causing fluctuations in its surface. This can lead to uneven distribution of the etching solution on the wafer surface, resulting in inconsistencies in etching depth and shape between different wafers or different areas of the same wafer. Consequently, problems such as uneven etching and over-etching occur, ultimately affecting the performance and quality of the silicon wafers. Utility Model Content
[0004] The purpose of this invention is to provide an etching device in response to the existing technological status quo.
[0005] Compared to existing technologies, the contact interface between the etching solution and the silicon wafer in this invention is more uniform and stable, effectively improving etching uniformity, reducing over-etching rate, and enhancing etching effect, thereby improving the performance and quality of the processed silicon wafer. Furthermore, this invention has a simpler overall structure, lower production precision requirements, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial-scale production.
[0006] To achieve the above objectives, the present invention adopts the following technical solution:
[0007] This utility model discloses an etching apparatus, comprising:
[0008] An etching unit includes a substrate on which a liquid flow channel is provided. The liquid flow channel is provided with a supply port for providing etching solution and a drain port for discharging etching solution.
[0009] A liquid flow generating device is configured to generate an etching solution into a liquid flow, the liquid flow being directed to flow into the liquid flow tank from at least one of the supply ports and out of the liquid flow tank from at least one of the drain ports.
[0010] In some embodiments, the same liquid flow tank is provided with a plurality of liquid supply ports and a plurality of liquid discharge ports.
[0011] In some embodiments, the liquid supply port and the liquid discharge port are arranged alternately in a first direction; or...
[0012] The supply port and the drain port are staggered in a first direction and staggered in a second direction, with the first direction and the second direction intersecting; or...
[0013] The multiple liquid supply ports and the multiple liquid discharge ports together form a rectangular array, and the liquid supply ports and the liquid discharge ports are arranged alternately along the direction from the center of the rectangular array to the four edges.
[0014] In some embodiments, the liquid supply port and the liquid discharge port are located on the bottom of the liquid flow tank, and both the liquid supply port and the liquid discharge port protrude from the bottom of the tank.
[0015] In some embodiments, the sidewall of the drain outlet is recessed from its end away from the bottom of the tank towards the bottom of the tank to form a side opening, wherein h1 > h2.
[0016] In the formula, h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2 is the relative distance from the end of the side opening near the bottom of the tank to the bottom of the tank.
[0017] In some embodiments, the outer side of the etching unit is further provided with a liquid receiving component capable of collecting the liquid overflowing from the liquid flow tank, wherein the opening of the liquid supply port is located at one end away from the bottom of the tank, wherein...
[0018] h1≥H, h2'≥H>h2,
[0019] In the formula, h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2' is the relative distance from the end of the drain port away from the bottom of the tank to the bottom of the tank; H is the depth of the liquid flow tank; and h2 is the relative distance from the end of the side opening near the bottom of the tank to the bottom of the tank.
[0020] In some embodiments, the difference between h1 and H is 0.2mm to 0.7mm, and the difference between h2' and H is 0.2mm to 0.7mm, wherein h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2' is the relative distance from the end of the drain port away from the bottom of the tank to the bottom of the tank; and H is the depth of the liquid flow tank.
[0021] In some embodiments, h1 = h2', where h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; and h2' is the relative distance from the end of the liquid discharge port away from the bottom of the tank to the bottom of the tank.
[0022] In some embodiments, the liquid supply port has an outlet pressure of 0.2 MPa to 0.5 MPa and an outlet flow rate of 180 ml / min to 250 ml / min.
[0023] In some embodiments, 0.98×≤S≤1.2×S0,
[0024] In the formula, S0 is the cross-sectional area of the workpiece to be processed, and S is the cross-sectional area inside the liquid flow tank.
[0025] In some embodiments, the device further includes a liquid supply channel, one end of which is connected to the liquid supply port, and the other end of which is provided with a supply source end for connecting to a liquid supply source. The liquid flow generating device includes a first pump for driving etching solution to be delivered from the supply source end to the liquid supply port, the first pump being disposed between the liquid supply port and the supply source end; and / or,
[0026] The device further includes a drain channel, one end of which is connected to the drain port. The liquid flow generating device includes a second pump for driving the etching liquid to be conveyed along the drain port toward the drain channel. The second pump is disposed on the drain channel and is connected to at least a portion of the drain port.
[0027] In some embodiments, the device further includes a first circulation channel, the two ends of which are respectively connected to the liquid supply channel and the liquid discharge channel; and / or,
[0028] The device further includes a second circulation channel, the two ends of which are respectively connected to the drain channel and the liquid supply source.
[0029] In some embodiments, the liquid supply channel includes a main liquid supply pipeline, one end of which is provided with a liquid supply branch. The number of liquid supply branches corresponds one-to-one with the number of liquid supply ports on the same liquid flow tank, and the end of each liquid supply branch away from the main liquid supply pipeline is connected to each of the liquid supply ports.
[0030] In some embodiments, the drainage channel includes a main drainage pipe, one end of which is provided with a drainage branch. The number of drainage branches corresponds one-to-one with the number of drainage ports on the same liquid flow tank, and the end of each drainage branch away from the main drainage pipe is connected to each of the drainage ports; or...
[0031] The drain outlet includes a gravity drain outlet and a negative pressure drain outlet. The drain channel includes a main drain pipe. One end of the main drain pipe is provided with a first branch and a second branch. The end of the first branch away from the main drain pipe is provided with a plurality of gravity drain branches for connecting with the gravity drain outlet. The number of gravity drain branches corresponds one-to-one with the number of gravity drain outlets on the same liquid flow tank. The second pump is provided on the second branch. The end of the second branch away from the main drain pipe is provided with a plurality of negative pressure drain branches for connecting with the negative pressure drain outlet. The number of negative pressure drain branches corresponds one-to-one with the number of negative pressure drain outlets on the same liquid flow tank.
[0032] In some embodiments, the apparatus includes a plurality of etching units, and the plurality of etching units are arranged in a row.
[0033] The beneficial effects of this utility model are as follows:
[0034] In this invention, an etching unit is provided in the device, and a liquid flow tank is provided on the etching unit. The liquid flow tank has a supply port and a drain port. Under the action of a liquid flow generating device, the etching solution flows into the liquid flow tank from at least one supply port and flows out of the liquid flow tank from at least one drain port, thus filling the liquid flow tank with flowing etching solution. In use, the silicon wafer is placed on the etching unit, and the etching solution flows uniformly on the lower surface of the silicon wafer. The lower surface of the silicon wafer makes stable contact with the flowing etching solution, and they react with each other, resulting in more uniform and stable etching of the silicon wafer. Compared with the prior art, the contact interface between the etching solution and the silicon wafer in this invention is more uniform and stable, which can effectively improve etching uniformity, reduce over-etching rate, and improve etching effect, thereby improving the performance and quality of the processed silicon wafer. At the same time, the overall structure of this invention is simpler, the production precision requirements of the device are lower, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial production. Attached Figure Description
[0035] Figure 1 This is a schematic diagram of the structure of an etching unit in an etching apparatus according to an embodiment of the present invention.
[0036] Figure 2 for Figure 1 A magnified view of part A.
[0037] Figure 3 This is a schematic diagram showing the arrangement of etching units in an etching apparatus according to an embodiment of the present invention.
[0038] Figure 4 This is a schematic diagram of the arrangement of etching units with silicon wafers placed in an etching apparatus according to an embodiment of the present invention.
[0039] Figure 5This is a schematic diagram of the structure of an etching device according to an embodiment of the present invention.
[0040] Figure 6 This is a schematic diagram of the etching unit in an embodiment of the present invention.
[0041] Figure 7 This is a schematic diagram of the etching unit in an embodiment of the present invention.
[0042] Figure 8 This is a schematic diagram of the etching unit in an embodiment of the present invention.
[0043] Figure 9 This is a partially enlarged longitudinal cross-sectional view of the etching unit in an embodiment of the present invention.
[0044] Figure 10 This is a schematic diagram of the liquid drainage of an etching device according to an embodiment of the present invention.
[0045] Figure 11 This is a schematic diagram of the structure of an etching device (including a first circulation channel) according to an embodiment of the present invention.
[0046] Figure 12 This is a schematic diagram of the structure of an etching device (including a second circulation channel) according to an embodiment of the present invention.
[0047] In the picture:
[0048] Etching unit 1; substrate 11; liquid flow tank 12; tank bottom 121; liquid supply port 13; liquid drain port 14; gravity drain port 14A and negative pressure drain port 14B; side opening 141;
[0049] Liquid flow generating device 2; first pump component 21; second pump component 22;
[0050] Liquid supply channel 3; main liquid supply line 31; liquid supply branch 32;
[0051] Liquid supply source 4;
[0052] Drainage channel 5; main drainage pipeline 51; drainage branch 52; gravity drainage branch 52A; negative pressure drainage branch 52B; first branch 53A and second branch 53B;
[0053] First circulation channel 61; Second circulation channel 62;
[0054] Silicon wafer 7. Detailed Implementation
[0055] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model. Furthermore, it should be understood that the specific embodiments described herein are merely for explaining this utility model and are not intended to limit this utility model.
[0056] In the description of this utility model, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined with "first," "second," etc., may explicitly or implicitly include one or more of the stated features. In the description of this utility model, "multiple" or "several" means two or more, unless otherwise explicitly specified.
[0057] In the description of this utility model, unless otherwise expressly specified and limited, the first feature "above" or "below" the second feature may include the first feature and the second feature being in direct contact, or the first feature and the second feature not being in direct contact but being in contact through another feature between them.
[0058] See Figure 1 , Figure 2 and Figure 5 As shown, this utility model discloses an etching apparatus, comprising:
[0059] Etching unit 1 includes a substrate 11, on which a liquid flow channel 12 is provided. The liquid flow channel 12 is provided with a supply port 13 for providing etching solution and a drain port 14 for discharging etching solution.
[0060] The liquid flow generating device 2 is configured to generate an etching solution into a liquid flow, wherein the liquid flow direction is from at least one liquid supply port 13 into the liquid flow tank 12 and from at least one liquid discharge port 14 out of the liquid flow tank 12.
[0061] As is understandable, liquid flow refers to flowing liquid, that is, the liquid flow generating device 2 provides the conveying power, and the etching liquid can flow under the action of the liquid flow generating device 2.
[0062] In this invention, an etching unit 1 is provided in the device, and a liquid flow tank 12 is provided on the etching unit 1. The liquid flow tank 12 has a supply port 13 and a drain port 14. Under the action of the liquid flow generating device 2, the etching solution flows into the liquid flow tank 12 from at least one supply port 13 and flows out of the liquid flow tank 12 from at least one drain port 14, thereby filling the liquid flow tank 12 with flowing etching solution. In use, the silicon wafer 7 is placed on the etching unit 1, and the etching solution flows uniformly on the lower surface of the silicon wafer 7. The lower surface of the silicon wafer 7 makes stable contact with the flowing etching solution, and they react with each other, making the etching of the silicon wafer 7 more uniform and stable. Compared with the prior art, the contact interface between the etching solution and the silicon wafer 7 in this invention is more uniform and stable, which can effectively improve the etching uniformity and reduce the over-etching rate. Experiments show that the over-etching rate of this invention can be reduced from 0.2% to 0.02% in existing etching equipment, improving the etching effect and thus improving the performance and quality of the processed silicon wafer 7. Meanwhile, the overall structure of this utility model is simpler, the production precision requirements of the device are lower, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial production.
[0063] Understandably, in this invention, the degree of etching can be controlled by adjusting etching-related parameters such as etching solution concentration, flow rate, and time.
[0064] In some embodiments, see Figure 1 and Figure 2 As shown, the same liquid flow tank 12 is provided with multiple liquid supply ports 13 and multiple liquid discharge ports 14.
[0065] By setting multiple liquid supply ports 13 and multiple liquid discharge ports 14, the etching solution can form a uniform liquid flow in the liquid flow tank 12, and can replace the etching solution that has reacted in the liquid flow tank 12 in a timely manner, ensuring that the etching solution reacting with the silicon wafer 7 always maintains an appropriate concentration, thereby effectively improving the etching uniformity, thereby improving the performance and quality of the processed silicon wafer 7, while ensuring high etching efficiency.
[0066] Understandably, the arrangement of the liquid supply port 13 and the liquid drain port 14 in the liquid flow tank 12 can be regular or irregular. Preferably, the liquid supply port 13 and the liquid drain port 14 are arranged regularly in the liquid flow tank 12. Specifically:
[0067] In the first implementation scheme, see Figure 6 As shown, the liquid supply port 13 and the liquid discharge port 14 are arranged alternately in the first direction.
[0068] In the second implementation scheme, see Figure 7As shown, the liquid supply port 13 and the liquid discharge port 14 are arranged alternately in the first direction and alternately in the second direction, with the first direction and the second direction being intersected.
[0069] In the third implementation scheme, preferably, see [link to implementation scheme]. Figure 1 , Figure 2 and Figure 8 As shown, multiple liquid supply ports 13 and multiple liquid discharge ports 14 together form a rectangular array. The liquid supply ports 13 and liquid discharge ports 14 are arranged alternately along the direction from the center of the rectangular array to the four edges. That is, in the rectangular array, the liquid supply ports 13 and liquid discharge ports 14 are arranged alternately in a rectangular arrangement. Specifically, the center of the rectangular array is a plurality of liquid supply ports 13 arranged along the first direction. A first ring of liquid discharge ports 14 arranged in a hollow rectangular array is provided around the liquid supply ports 13. A second ring of liquid supply ports 13 arranged in a hollow rectangular array is provided around the ring of liquid discharge ports 14. And so on, the liquid supply ports 13 and liquid discharge ports 14 are arranged alternately in a rectangular arrangement until the rectangular array extends to the four edges of the liquid flow tank 12. Similarly, the center of the rectangular array can also be multiple drain ports 14 arranged along the first direction. A first ring of supply ports 13 arranged in a hollow rectangular array is provided around the drain ports 14. In this way, the supply ports 13 and drain ports 14 are arranged alternately in a rectangular arrangement.
[0070] Through the first to third implementation schemes described above, the liquid supply port 13 and the liquid discharge port 14 can be more evenly distributed in the liquid flow tank 12, which is conducive to the formation of a uniform liquid flow in the liquid flow tank 12. Among them, the third implementation scheme has higher etching uniformity and better etching effect.
[0071] In some embodiments, see Figure 1 , Figure 2 and Figure 9 As shown, the liquid supply port 13 and the liquid discharge port 14 are located on the bottom 121 of the liquid flow tank 12, and both the liquid supply port 13 and the liquid discharge port 14 protrude from the bottom 121 of the tank.
[0072] During the etching process, impurities such as silicon chips are generated. The protruding design prevents these impurities from accumulating at the supply port 13 and drain port 14, preventing blockages and ensuring a stable supply of etching solution and smooth discharge of waste liquid. At the same time, the protruding supply port 13 allows the etching solution to flow more evenly into the liquid flow tank 12, avoiding the influence of the tank bottom 121 on liquid distribution, ensuring consistent etching conditions across all parts of the silicon wafer 7 surface, and improving etching uniformity and product quality.
[0073] In some embodiments, see Figure 9 As shown, the sidewall of the drain outlet 14 is recessed from the end away from the bottom of the tank 121 toward the bottom of the tank 121 to form a side opening 141, wherein h1 > h2.
[0074] In the formula, h1 is the relative distance from the opening of the liquid supply port 13 to the bottom of the tank 121; h2 is the relative distance from the end of the side opening 141 near the bottom of the tank 121 to the bottom of the tank 121.
[0075] The opening of the liquid supply port 13 is located at a relatively high height. Combined with the side opening 141 of the drain port 14, a height difference between the inlet and outlet is formed. This allows the newly injected etching solution to flow first to the contact interface between the etching solution and the silicon wafer 7, while the already reacted etching solution falls back due to gravity and is discharged through the side opening 141 of the drain port 14. The newly injected etching solution is discharged only after it has fully reacted with the silicon wafer 7, ensuring that the etching solution reacting with the silicon wafer 7 always maintains an appropriate concentration, improving the etching effect, thereby improving the performance and quality of the processed silicon wafer 7, while ensuring high etching efficiency and reducing the amount of etching solution wasted.
[0076] Preferably, the sidewall of the same drain outlet 14 is provided with a plurality of circumferentially evenly arranged side openings 141.
[0077] In some embodiments, see Figure 2 and Figure 9 As shown, the outer side of the etching unit is also provided with a liquid receiving component (not shown) capable of collecting the liquid overflowing from the liquid flow tank. The opening of the liquid supply port 13 is located at the end away from the bottom 121 of the tank.
[0078] h1≥H, h2'≥H>h2,
[0079] In the formula, h1 is the relative distance from the opening of the liquid supply port 13 to the bottom of the tank 121; h2' is the relative distance from the end of the drain port 14 away from the bottom of the tank 121 to the bottom of the tank 121; H is the depth of the liquid flow tank 12; and h2 is the relative distance from the end of the side opening 141 near the bottom of the tank 121 to the bottom of the tank 121.
[0080] In this embodiment, the silicon wafer 7 is supported on the etching unit 1 by the liquid supply port 13 and the liquid drain port 14, which need to be made of a material with a certain hardness. The opening of the liquid supply port 13 is at a relatively high height, which facilitates the newly injected etching solution to flow first to the contact interface between the etching solution and the silicon wafer 7. The already reacted etching solution falls back due to gravity and is discharged through the side opening 141 of the drain port 14. The newly injected etching solution can be discharged only after fully reacting with the silicon wafer 7, ensuring that the etching solution reacting with the silicon wafer 7 always maintains an appropriate concentration, improving the etching effect, ensuring high etching efficiency, and reducing the amount of etching solution wasted. At the same time, since h1 and h2' are higher than H, that is, the ends of the liquid supply port 13 and the drain port 14 that are far from the bottom 121 are both higher than the depth of the liquid flow tank 12, some etching solution can overflow through the edges of the liquid flow tank 12, ensuring that the liquid level of the etching solution is always kept at a height lower than the upper surface of the silicon wafer 7 (i.e., the silicon wafer 7 facing away from the liquid flow tank 12), effectively preventing the etching solution from flowing to the upper surface of the silicon wafer 7 and causing etching on the upper surface of the silicon wafer 7.
[0081] In some embodiments, the difference between h1 and H is 0.2mm to 0.7mm, and the difference between h2' and H is 0.2mm to 0.7mm, wherein h1 is the relative distance from the opening of the liquid supply port 13 to the bottom of the tank 121; h2' is the relative distance from the end of the drain port 14 away from the bottom of the tank 121 to the bottom of the tank 121; and H is the depth of the liquid flow tank 12.
[0082] For example, the difference between h1 and H is 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm or 0.7mm, but is not limited thereto.
[0083] For example, the difference between h2' and H is 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm or 0.7mm, but is not limited thereto.
[0084] The height of the etching solution relative to the silicon wafer 7 should not be too low, otherwise it will be difficult to ensure uniform contact between the etching solution surface and the lower surface of the silicon wafer 7. The height of the etching solution surface relative to the silicon wafer should not be too high, otherwise it will easily cause the upper surface of the silicon wafer 7 to also come into contact with the etching solution and react. Considering the surface tension of the etching solution, experiments have shown that when the difference between h1 and H is 0.2mm to 0.7mm and the difference between h2' and H is 0.2mm to 0.7mm, it can ensure that the etching solution surface is in uniform contact with the lower surface of the silicon wafer 7, and also ensure that the upper surface of the silicon wafer 7 is not etched by the etching solution, resulting in a higher product yield.
[0085] Preferably, h1 = h2', where h1 is the relative distance from the opening of the liquid supply port 13 to the bottom of the tank 121; h2' is the relative distance from the end of the drain port 14 away from the bottom of the tank 121 to the bottom of the tank 121, which can ensure that the silicon wafer 7 is flatter and is conducive to improving the uniformity of etching.
[0086] In some embodiments, the liquid outlet pressure of the liquid supply port 13 is 0.2MPa to 0.5MPa, and the liquid flow rate is 180ml / min to 250ml / min.
[0087] For example, the liquid outlet pressure of the liquid supply port 13 is 0.2MPa, 0.25MPa, 0.3MPa, 0.35MPa, 0.4MPa, 0.45MPa or 0.5MPa, but is not limited thereto.
[0088] For example, the flow rate of the liquid outlet 13 is 180ml / min, 185ml / min, 190ml / min, 195ml / min, 200ml / min, 205ml / min, 210ml / min, 215ml / min, 220ml / min, 225ml / min, 230ml / min, 235ml / min, 240ml / min, 245ml / min or 250ml / min, but is not limited to these.
[0089] Within this range, it can be ensured that the lightweight silicon wafer 7 will not be displaced by the liquid flow impact from the liquid supply port, and the etching solution can flow out smoothly from the opening of the liquid supply port. It can also be ensured that while there is enough etching solution to etch the lower surface of the silicon wafer 7, there will be no unnecessary waste of etching solution. The lower surface of the silicon wafer 7 can be in uniform contact with the continuously stable and slowly flowing etching solution, effectively improving the etching effect.
[0090] To avoid wasting etching solution, the cross-sectional area inside the liquid flow tank 12 can be set to be approximately the same size as the cross-sectional area of the silicon wafer 7 to be processed. In some embodiments, 0.98×S0≤S≤1.2×S0.
[0091] In the formula, S0 is the cross-sectional area of the workpiece to be processed, and S is the cross-sectional area inside the liquid flow tank 12.
[0092] The cross-sectional area inside the liquid flow tank 12 should not be too large to avoid horizontal displacement of the silicon wafer 7. At the same time, it is easy to increase unnecessary loss of etching solution.
[0093] In some embodiments, see Figure 5As shown, the device also includes a liquid supply channel 3, one end of which is connected to the liquid supply port 13, and the other end is provided with a supply end 33 for connecting to the liquid supply source 4. The liquid flow generating device 2 includes a first pump 21 for driving the etching liquid to be transported from the supply end 33 to the liquid supply port 13. The first pump 21 is located between the liquid supply port 13 and the supply end 33.
[0094] In use, the first pump 21 provides the power to transport new etching fluid from the source end 33 through the supply channel 3 to the supply port 13, and then enters the liquid flow tank 12 through the supply port 13.
[0095] For example, an external fixing device for fixing the silicon wafer 7 can also be used, such as a fixing bracket with a fixing suction cup, but it is not limited to this. It is only necessary to ensure that the silicon wafer 7 is fixed on a certain horizontal plane.
[0096] In some embodiments, see Figure 5 As shown, the device also includes a drain channel 5, one end of which is connected to a drain port 14. The liquid flow generating device 2 includes a second pump 22 for driving the etching liquid to be conveyed along the drain port 14 toward the drain channel 5. The second pump 22 is disposed on the drain channel 5 and is connected to at least a portion of the drain port 14.
[0097] For details, see Figure 5 As shown, the etching solution in the liquid flow tank 12 can be discharged from the drain port 14 via the drain channel 5 by its own weight. In this case, the drain port 14 is not connected to the second pump 22; see also Figure 10 As shown, the etching solution can also be generated by the second pump 22 to create negative pressure at the drain port 14. The second pump 22 provides the conveying power to discharge the etching solution in the liquid flow tank 12 from the drain port 14 through the drain channel 5. At the same time, since the second pump 22 generates negative pressure at the drain port 14, it can fix the silicon wafer 7, prevent the silicon wafer 7 from shifting, and ensure that the lower surface of the silicon wafer 7 can be in uniform contact with the continuously stable and slowly flowing etching solution, effectively improving the etching effect. Compared with the external fixing device to fix the silicon wafer 7, this fixing method is simpler and more convenient.
[0098] For example, a one-way valve may also be provided on the drain channel 5. The one-way valve is located at the upstream end of the second pump component 22 to prevent the etching solution in the drain channel 5 from flowing back.
[0099] In some embodiments, the end of the liquid supply channel 3 near the liquid supply port 13 can penetrate the base 11 and be connected to the liquid supply port 13, and the end of the liquid discharge channel 5 near the liquid discharge port 14 can also penetrate the base 11 and be connected to the liquid discharge port 14, so as to make the device layout compact.
[0100] In some embodiments, see Figure 11As shown, the device also includes a first circulation channel 61, the two ends of which are connected to the liquid supply channel 3 and the liquid discharge channel 5, respectively.
[0101] Understandably, during the etching process, when the concentration of the etching solution discharged from the liquid flow tank 12 through the drain port 14 still meets the etching concentration requirements, the etching solution discharged through the drain port 14 can re-enter the supply channel 3 through the drain channel 5 and the first circulation channel 61, and then re-enter the liquid flow tank 12 through the supply port 13 through the supply channel 3, until the etching solution discharged through the drain port 14 can no longer meet the etching concentration requirements, thereby making full use of the etching solution and reducing production costs.
[0102] In some embodiments, see Figure 12 As shown, the device also includes a second circulation channel 62, the two ends of which are connected to the drain channel 5 and the liquid supply source 4, respectively.
[0103] Understandably, during the etching process, when the concentration of the etching solution discharged from the liquid flow tank 12 through the drain port 14 still meets the etching concentration requirements, the etching solution discharged through the drain port 14 can re-enter the liquid supply source 4 through the drain channel 5 and the second circulation channel 62. Then, under the action of the first pump 21, it re-enters the liquid flow tank 12 through the liquid supply channel 3 from the liquid supply port 13 until the etching solution discharged through the drain port 14 can no longer meet the etching concentration requirements. This makes full use of the etching solution and reduces production costs.
[0104] In some embodiments, the liquid supply source 4 may be provided with a concentration adjustment zone. The etching solution discharged from the liquid flow tank 12 through the drain port 14 is subjected to concentration adjustment treatment in the concentration adjustment zone so that it meets the etching concentration requirements again and can then be reused.
[0105] In some embodiments, see Figure 5 , Figure 11 and Figure 12 As shown, the liquid supply channel 3 includes a main liquid supply pipeline 31, with a liquid supply branch 32 at one end. The number of liquid supply branches 32 corresponds one-to-one with the number of liquid supply ports 13 on the same liquid flow tank 12, and the end of each liquid supply branch 32 away from the main liquid supply pipeline 31 is connected to each liquid supply port 13. This allows for the delivery of etching solution using fewer first pump components 21, resulting in a simpler equipment structure and reduced equipment costs. Simultaneously, it facilitates the uniform entry of etching solution into the liquid flow tank 12 through each liquid supply port 13, thereby improving the etching effect.
[0106] In the first embodiment, when all the drain ports 14 on the same liquid flow tank 12 are connected to the second pump component 14, see [reference needed]. Figure 5 , Figure 11 and Figure 12As shown, the drainage channel 5 includes a main drainage pipe 51, with a drainage branch 52 at one end. The number of drainage branches 52 corresponds one-to-one with the number of drainage ports 14 on the same liquid flow tank 12, and the end of each drainage branch 52 away from the main drainage pipe 51 is connected to each drainage port 14. This allows for the delivery of etching solution using fewer second pumps 22, resulting in a simpler equipment structure and reduced equipment costs. Simultaneously, it facilitates the even discharge of etching solution from each drainage port 14 into the liquid flow tank 12, thus improving the etching effect.
[0107] In the second implementation, see Figure 1 , Figure 2 and Figure 10 As shown, when the drain port 14 on the same liquid flow tank 12 is only partially connected to the second pump 14, the drain port 14 includes a gravity drain port 14A and a negative pressure drain port 14B. The drain channel includes a main drain pipe 51. One end of the main drain pipe 51 is provided with a first branch 53A and a second branch 53B. The end of the first branch 53A away from the main drain pipe 51 is provided with a plurality of gravity drain branches 52A for connecting with the gravity drain port 14A. The number of gravity drain branches 52A corresponds one-to-one with the number of gravity drain ports 14A on the same liquid flow tank 12. The second pump 22 is provided on the second branch 53B. The end of the second branch 53B away from the main drain pipe 51 is provided with a plurality of negative pressure drain branches 52B for connecting with the negative pressure drain port 14B. The number of negative pressure drain branches 52B corresponds one-to-one with the number of negative pressure drain ports 14B on the same liquid flow tank 12.
[0108] Specifically, the etching solution in the liquid flow tank 12 can be discharged from the gravity drain port 14A via the drain channel 5 based on its own weight. Alternatively, the etching solution can be discharged from the negative pressure drain port 14B by the second pump 22, which provides the conveying power to discharge the etching solution in the liquid flow tank 12 from the drain port 14 via the drain channel 5. At the same time, since the second pump 22 generates negative pressure at the drain port 14, it can fix the silicon wafer 7. Compared with the first embodiment, the second embodiment can also reduce the energy consumption of the second pump 14.
[0109] In some embodiments, see Figure 2 and Figure 3 As shown, the device includes multiple etching units 1, which are arranged in a row to ensure that multiple silicon wafers 7 can be etched simultaneously, thereby improving etching efficiency and making the device layout more compact and reducing the device footprint.
[0110] In the description of this specification, references to terms such as "some embodiments," "exemplary," "example," or "for example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0111] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Although the present utility model has been disclosed above with reference to a preferred embodiment, it is not intended to limit the present utility model. Any person skilled in the art can make some modifications or alterations to the above-described technical content to create equivalent embodiments without departing from the scope of the present utility model. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present utility model without departing from the scope of the present utility model shall still fall within the scope of the present utility model.
Claims
1. An etching apparatus, characterized by, include: An etching unit includes a substrate on which a liquid flow channel is provided. The liquid flow channel is provided with a supply port for providing etching solution and a drain port for discharging etching solution. A liquid flow generating device is configured to generate an etching solution into a liquid flow, the liquid flow being directed to flow into the liquid flow tank from at least one of the supply ports and out of the liquid flow tank from at least one of the drain ports.
2. The etching apparatus of claim 1, wherein The same liquid flow tank is provided with multiple liquid supply ports and multiple liquid discharge ports.
3. The etching apparatus of claim 2, wherein The supply port and the drain port are arranged alternately in a first direction; or... The supply port and the drain port are staggered in a first direction and staggered in a second direction, with the first direction and the second direction intersecting; or... The multiple liquid supply ports and the multiple liquid discharge ports together form a rectangular array, and the liquid supply ports and the liquid discharge ports are arranged alternately along the direction from the center of the rectangular array to the four edges.
4. The etching apparatus of claim 1, wherein The liquid supply port and the liquid discharge port are located on the bottom of the liquid flow tank, and both the liquid supply port and the liquid discharge port protrude from the bottom of the tank.
5. The etching apparatus of claim 4, wherein The sidewall of the drain outlet is recessed from its end away from the bottom of the tank towards the bottom of the tank to form a side opening, wherein, h1 > h2, In the formula, h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2 is the relative distance from the end of the side opening near the bottom of the tank to the bottom of the tank.
6. The etching apparatus of claim 5, wherein The outer side of the etching unit is also provided with a liquid receiving component capable of collecting the liquid overflowing from the liquid flow tank. The opening of the liquid supply port is located at the end away from the bottom of the tank. h1≥H, h2'≥H>h2, In the formula, h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2' is the relative distance from the end of the drain port away from the bottom of the tank to the bottom of the tank; H is the depth of the liquid flow tank; and h2 is the relative distance from the end of the side opening near the bottom of the tank to the bottom of the tank.
7. The etching apparatus of claim 5, wherein The difference between h1 and H is 0.2mm to 0.7mm, and the difference between h2' and H is 0.2mm to 0.7mm, where h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2' is the relative distance from the end of the drain port away from the bottom of the tank to the bottom of the tank; and H is the depth of the liquid flow tank.
8. The etching apparatus of claim 5, wherein h1 = h2', where h1 is the relative distance from the opening of the liquid supply port to the bottom of the tank; h2' is the relative distance from the end of the liquid discharge port away from the bottom of the tank to the bottom of the tank.
9. The etching apparatus of claim 1, wherein The liquid supply port has an outlet pressure of 0.2MPa to 0.5MPa and an outlet flow rate of 180ml / min to 250ml / min.
10. An etching apparatus according to claim 1, characterized in that, 0.98×S0≤S≤1.2×S0, In the formula, S0 is the cross-sectional area of the workpiece to be processed, and S is the cross-sectional area inside the liquid flow tank.
11. An etching apparatus according to claim 1, characterized in that, The device further includes a liquid supply channel, one end of which is connected to the liquid supply port, and the other end is provided with a supply source end for connecting to a liquid supply source. The liquid flow generating device includes a first pump component for driving the etching solution to be transported from the supply source end to the liquid supply port, the first pump component being disposed between the liquid supply port and the supply source end; and / or, The device further includes a drain channel, one end of which is connected to the drain port. The liquid flow generating device includes a second pump for driving the etching liquid to be conveyed along the drain port toward the drain channel. The second pump is disposed on the drain channel and is connected to at least a portion of the drain port.
12. The etching apparatus of claim 11, wherein The device further includes a first circulation channel, the two ends of which are respectively connected to the liquid supply channel and the liquid discharge channel; and / or, The device further includes a second circulation channel, the two ends of which are respectively connected to the drain channel and the liquid supply source.
13. The etching apparatus of claim 11, wherein The liquid supply channel includes a main liquid supply pipeline, one end of which is provided with a liquid supply branch. The number of liquid supply branches corresponds one-to-one with the number of liquid supply ports on the same liquid flow tank, and the end of each liquid supply branch away from the main liquid supply pipeline is connected to each of the liquid supply ports.
14. The etching apparatus of claim 11, wherein The drainage channel includes a main drainage pipe, one end of which is provided with a drainage branch. The number of drainage branches corresponds one-to-one with the number of drainage ports on the same liquid flow tank, and the end of each drainage branch away from the main drainage pipe is connected to each of the drainage ports; or... The drain outlet includes a gravity drain outlet and a negative pressure drain outlet. The drain channel includes a main drain pipe. One end of the main drain pipe is provided with a first branch and a second branch. The end of the first branch away from the main drain pipe is provided with a plurality of gravity drain branches for connecting with the gravity drain outlet. The number of gravity drain branches corresponds one-to-one with the number of gravity drain outlets on the same liquid flow tank. The second pump is provided on the second branch. The end of the second branch away from the main drain pipe is provided with a plurality of negative pressure drain branches for connecting with the negative pressure drain outlet. The number of negative pressure drain branches corresponds one-to-one with the number of negative pressure drain outlets on the same liquid flow tank.
15. The etching apparatus according to any one of claims 1 to 14, wherein The device includes a plurality of etching units, and the plurality of etching units are arranged in a row.