radar device

Abstract

Radar device (1) comprising: a substrate (2) comprising a plurality of conductor layers (20, 21, 22) arranged on a front surface (201) or a rear surface (202), wherein the conductor layers include a plurality of high-frequency conductor layers (21, 22) for transmitting a high-frequency signal; a semiconductor component (3) which is arranged facing the front surface of the substrate, is in contact with the majority of conductor layers on the substrate via conductive components (35), and is configured to generate a high-frequency signal; and an adhesive (4) configured to bond the semiconductor component to the front surface of the substrate, wherein the semiconductor component has a bottom surface (301) and a plurality of side surfaces (302A, 302B, 302C) which includes a first side surface (302A) which is directed in a first direction (D1) from a central section to an edge in a plane of the front surface or the rear surface, all of the plurality of high-frequency conductor layers or a high-frequency conductor layer set (27) which is included in the plurality of high-frequency conductor layers, at least high-frequency conductor layers which bend in the plane of the front surface or the rear surface and extend on the front surface or the rear surface from inner ends (211, 221) facing the bottom surface (301) to outer ends (212, 222) positioned in the first direction from the first side surface (302A), and The adhesive is in contact with the front surface except at points where the majority of formed high-frequency conductor layers are in contact with the front surface, and with the side surfaces of the semiconductor component.

Description

Technical field

[0001] The present disclosure relates to a radar device. State of the art

[0002] A radar device is used to determine the presence or absence of any object within its detection range using high-frequency radar. For example, a radar device is used to detect the presence of another vehicle in front of the user's vehicle or the distance between the user's vehicle and the other vehicle.

[0003] A radar device includes a semiconductor component positioned facing the front surface of an insulating substrate. The front surface of the substrate contains multiple high-frequency conductive layers for transmitting high-frequency signals, electrically connected to the semiconductor component. The semiconductor component is bonded to these conductive layers, which contain the high-frequency conductive layers, by means of a soldering compound. Additionally, the semiconductor component and the substrate are bonded together with adhesive to prevent the semiconductor component from shifting relative to the substrate due to temperature changes.

[0004] PTL 1, for example, describes a semiconductor device that includes high-frequency conductive elements. In this semiconductor device, a semiconductor package and a base are connected via the high-frequency conductive elements and interconnects, and the semiconductor package and base are fixed with a filler material. The high-frequency conductive elements and the filler material are positioned without overlapping in a state suitable for orthogonal projection onto the main surface of the base.

[0005] PTL 2 relates to a printed circuit board assembly comprising a printed circuit board, an integrated circuit chip, a ball grid array, a barrier material, and an adhesive material. The printed circuit board has a mounting surface that defines a plurality of contact pads, as well as a continuous conductor track that connects a selected group of the contact pads. The integrated circuit chip comprises an electrical circuit with a plurality of solder pads. The ball grid array comprises a plurality of solder balls arranged between the contact pads and the solder pads. The plurality of solder balls establishes an electrical connection between the electrical circuit and the contact pads. The barrier material is arranged between a series of solder balls that are attached to the selected group of contact pads to form a barrier.The barrier separates an underfilled area from a non-underfilled area between the printed circuit board and the integrated circuit chip. The barrier is in direct contact with the row of solder balls, the integrated circuit chip, and the continuous conductor track. The adhesive material is in direct contact with a portion of the underfilled area, and the barrier prevents the adhesive from penetrating into the non-underfilled area. List of prior art patent literature PTL 1 JP 3 221 210 U PTL 2 EP 3 383 148 A2 Summary of the invention

[0006] In the semiconductor device described in PTL 1, high-frequency conductor layers for transmitting high-frequency signals are arranged over the base in a manner that is not particularly advantageous with respect to the positional relationship to the filler material, which serves as an adhesive.

[0007] If the high-frequency conductive layers, which transmit high-frequency signals, are designed to be longer, the signal strength can decrease. Therefore, the high-frequency conductive layers can be designed to have the shortest possible length to prevent simple attenuation of high-frequency signals. Additionally, the filler material does not need to be in contact with the high-frequency conductive elements to reduce attenuation of high-frequency signals, as described in PTL 1.

[0008] To create shorter high-frequency conductor layers, the high-frequency conductor layers can be distributed around the semiconductor component above the substrate (base). However, in this case, an antenna layer connected to high-frequency conductor layers can constitute a larger proportion of the radar device, increasing its overall size. Due to the limited space available for the radar device, reductions in its overall size are necessary.

[0009] In PTL 1, the semiconductor package is fixed to the base by bonding its bottom surface to the base surface via the filler material. However, the semiconductor device comprises various components, such as the base, the semiconductor package, the high-frequency conductive elements, the interconnects, and the filler material, each with different coefficients of linear expansion. Therefore, for example, a temperature increase can cause various thermal stresses on the components, displacing the semiconductor package relative to the substrate in a direction parallel to the substrate surface. As a result, cracking can occur in the high-frequency conductive elements, the interconnects, or other components.

[0010] To reduce attenuation of high-frequency signals, the size of the device, and cracking due to thermal stress, the high-frequency conductor layers and the adhesive are to be arranged in a further improved manner relative to the semiconductor component.

[0011] The present disclosure is intended to provide a radar device which enables a suitable arrangement of the high-frequency conductor layers and the adhesive relative to the semiconductor component in order to reduce attenuation of high-frequency signals, the size of the device and cracking due to thermal stress.

[0012] One aspect or embodiment of the present disclosure provides for a radar device comprising the following: a substrate comprising a plurality of conductor layers arranged on a front surface or a rear surface, wherein the conductor layers include a plurality of high-frequency conductor layers for transmitting a high-frequency signal; a semiconductor component, which is arranged facing the front surface of the substrate, is in contact with the majority of conductor layers on the substrate via conductive components, and generates a high-frequency signal; and an adhesive that bonds the semiconductor component to the front surface of the substrate.

[0013] The semiconductor component has a bottom surface and a plurality of side surfaces, including a first side surface oriented in a first direction from a central section to an edge in a plane of the front or rear surface. All of the plurality of high-frequency conductor layers, or a set of high-frequency conductor layers included in the plurality of high-frequency conductor layers, include at least high-frequency conductor layers that bend in the plane of the front or rear surface and extend on the front or rear surface from inner ends facing the bottom surface to outer ends positioned in the first direction from the first side surface.

[0014] Except at the locations of the majority of formed high-frequency conductor layers, the adhesive is in contact with the front surface and is in contact with the side surfaces of the semiconductor component.

[0015] In the radar device, the high-frequency conductor layers and the adhesive are arranged advantageously relative to the semiconductor components.

[0016] More precisely, the majority of the total high-frequency conductor layers, or the high-frequency conductor layer set, includes at least high-frequency conductor layers that bend in the plane of the substrate's front surface. As a result, the outer ends of the majority of the total high-frequency conductor layers, or the high-frequency conductor layer set, are positioned in the first direction, starting from the first side surface of the semiconductor component. This arrangement allows for the reduction of high-frequency signal attenuation by minimizing the length of the formed high-frequency conductor layers and enables a reduction in device size by maximizing the density of the high-frequency conductor layers.

[0017] Except at the locations of the majority of the formed high-frequency conductive layers, the adhesive is in contact with the front surface of the substrate and the side surfaces of the semiconductor component. This arrangement allows the adhesive to hold the side surfaces of the semiconductor component in place, even when the semiconductor component is subjected to thermal stresses due to differences in the linear expansion coefficients of components such as the substrate, conductive layers, semiconductor component, conductive parts, and the adhesive. Thus, the semiconductor component cannot be displaced relative to the substrate in a direction parallel to the front surface of the substrate, preventing, for example, cracking of the conductive parts.

[0018] Accordingly, the foregoing radar device enables a suitable arrangement of the high-frequency conductor layers and the adhesive relative to the semiconductor component in order to reduce attenuation of high-frequency signals, the size of the device and cracking due to thermal stress. Brief description of the drawings

[0019] The functions, features, and advantages of this disclosure will become clear from the following detailed description with reference to the accompanying drawings. The drawings of this disclosure are listed below. Fig. 1 a top view of a radar device according to a first embodiment, showing the front surface of its substrate; Fig. 2 a top view of a surface comprising a semiconductor component and high-frequency conductor layers in the radar device according to the first embodiment, showing the front surface of the substrate; Fig. 3 a top view of antenna conductor layers in the radar device according to the first embodiment, showing the rear surface of the substrate; Fig. 4 a top view of a surface comprising the semiconductor component, the high-frequency conductor layers and adhesives in the radar device according to the first embodiment, showing the front surface of the substrate; Fig. 5 an enlarged top view of a surface containing an adhesive in the radar device according to the first embodiment, showing the front surface of the substrate; Fig. 6 a cross-sectional view of an area comprising the semiconductor component, the high-frequency conductor layers and an adhesive, in the radar device according to the first embodiment; Fig. 7 a cross-sectional view of a surface comprising a semiconductor component, high-frequency conductive layers and an adhesive, in another radar device according to the first embodiment; Fig. 8 a cross-sectional view of a surface comprising a semiconductor component, high-frequency conductive layers and an adhesive, in another radar device according to the first embodiment; Fig. 9 a cross-sectional view of a surface comprising a semiconductor component, high-frequency conductive layers and an adhesive, in another radar device according to the first embodiment; Fig. 10 an enlarged top view of an area containing adhesives in another radar device according to the first embodiment, showing the front surface of the substrate; Fig. 11 a top view of a surface comprising a semiconductor component, high-frequency conductive layers and adhesives in a radar device according to a second embodiment, showing the front surface of its substrate; Fig. 12. A top view of a surface comprising a semiconductor component, high-frequency conductive layers and adhesives, in another radar device according to the second embodiment, showing the front surface of the substrate; and Fig. 13 a top view of a surface comprising a semiconductor component, high-frequency conductive layers and adhesives, in another radar device according to the second embodiment, showing the front surface of the substrate. Description of the embodiments

[0020] Preferred embodiments of the radar device described above will now be described with reference to the drawings. First embodiment

[0021] A radar device 1 according to this embodiment comprises a substrate 2, a semiconductor component 3 and an adhesive 4, as described in the Fig. 1, Fig. 2, Fig. 3, Fig. 4 to Fig. Figure 5 shows that the substrate 2 has a front surface 201 on which a plurality of conductive layers 20, 21, and 22 are arranged, and the plurality of high-frequency conductive layers 21 and 22 transmit high-frequency signals. The semiconductor component 3 is arranged facing the front surface 201 of the substrate 2, connects the plurality of conductive layers 20, 21, and 22 on the substrate 2 to conductive components 35, and generates high-frequency signals. The adhesive 4 bonds the semiconductor component 3 to the front surface 201 of the substrate 2.

[0022] The semiconductor component 3 has a bottom surface 301 and a plurality of side surfaces 302A, 302B, and 302C, wherein the first side surface 302A faces in a first direction D1 from a central section to an edge in a plane of the front surface 201. All of the plurality of high-frequency conductor layers 21 and 22 include at least high-frequency conductor layers that bend in a plane of the front surface 201 and extend on the front surface 201 from inner ends 211 and 221, which are oriented towards the bottom surface 301, to outer ends 212 and 222, which are positioned in the first direction D1 from the first side surface 302A.The adhesive 4 is in contact with the front surface 201 except at the locations of the majority of formed high-frequency conductor layers 21 and 22, and is in contact with the side surfaces 302A, 302B and 302C of the semiconductor component 3.

[0023] The radar device 1 according to the present embodiment will now be described in detail. Radar device 1

[0024] The radar device 1 is used to determine the presence or absence of any object within the radar detection range by means of a high-frequency radar. The radar device 1 according to the present embodiment is mounted on a vehicle and is used to detect the presence of another vehicle in front of the user's vehicle or the distance between the user's vehicle and the other vehicle. The radar device 1 includes a millimeter-wave radar that uses millimeter waves in the frequency band of 30 to 300 GHz. The high-frequency waves have frequencies from 3 MHz to 300 GHz.

[0025] The radar device 1 is installed on the front of a vehicle. More precisely, the radar device 1 is installed behind the emblem, which is located, for example, on the radiator grille at the front of the vehicle. In the present embodiment, the radar device 1 is installed on a vehicle. The radar device 1 is also used for a radar monitoring system on the vehicle. The radar monitoring system uses a control device on the vehicle to detect an object using high-frequency radar.

[0026] In radar device 1, a direction extending in a plane of the front surface 201 of substrate 2 from a central section to an edge of substrate 2 is designated as the first direction D1. The first direction D1 is defined as a direction that is orthogonal to one side of the substantially rectangular substrate 2. In the plane of the front surface 201 of substrate 2, the directions perpendicular to the first direction D1 are designated as second directions D2. The second directions D2 denote directions opposite to the first direction D1 and perpendicular to it.

[0027] In the plane of the front surface 201 of substrate 2, the direction opposite to the first direction D1 is designated as a third direction D3. The direction in which the semiconductor component 3 and the substrate 2 are oriented towards each other, or the direction perpendicular to the planes of the front surface 201 of substrate 2 and its rear surface 202, is designated as a vertical direction H. The side surface of the semiconductor component 3 oriented in the first direction D1 is designated as the first side surface 302A. The pair of side surfaces of the semiconductor component 3 oriented in the second directions D2 are designated as the second side surfaces 302B. The side surface of the semiconductor component 3 oriented in the third direction D3 is designated as the third side surface 302C. Substrate 2

[0028] As in the Fig. 1 and Fig. As shown in Figure 3, the substrate 2 includes an insulating substrate body 200, the majority of conductor layers 20, 21 and 22 provided on the front surface 201 of the substrate body 200, and antenna conductor layers 23 provided on the rear surface 202 of the substrate body 200. Fig. Figure 1 illustrates the front surface 201 of substrate 2, whereas Fig. Figure 3 illustrates the rear surface 202 of the substrate 2. The substrate body 200 is a flat base. The front surface 201 and the rear surface 202 are designed as the main surfaces, occupying the largest area of ​​the substrate body 200. The antenna conductor layers 23 are connected to the high-frequency conductor layers 21 and 22 of the majority of conductor layers 20, 21, and 22. Antenna conductor layers 23

[0029] As in the Fig. 1 and Fig. As shown in Figure 3, the antenna conductor layers 23 form antennas for transmitting or receiving high-frequency signals. The antenna conductor layers 23 include transmit antenna conductor layers 23 for transmitting modulated waves (high-frequency waves) generated in the semiconductor component 3 to an object, as transmit waves, and receive antenna conductor layers 23 for receiving waves emitted from the transmit antenna and reflected by an object, as receive waves. Some of the high-frequency conductor layers 21 and 22 are connected to the transmit antenna conductor layers 23, and others are connected to the receive antenna conductor layers 23. In this embodiment, the antenna conductor layers 23 are provided on the rear surface 202 of the substrate 2.Any of the antenna conductor layers 23 can be the transmitting antenna conductor layers 23 or the receiving antenna conductor layers 23, and the transmitting antenna conductor layers 23 and the receiving antenna conductor layers 23 are indicated by the same reference symbol. High-frequency conductor layers 21, 22

[0030] As in Fig. Figure 2 shows the high-frequency conductor layers 21 and 22, which are used to transmit high-frequency signals. The conductor layers 20, 21, and 22, which include the high-frequency conductor layers 21 and 22, are composed of copper foil provided on the front surface 201 of the substrate 2. In this embodiment, some of the high-frequency conductor layers 21 and 22 transmit high-frequency signals from the semiconductor component 3 to the transmit-antenna conductor layers 23, and others transmit high-frequency signals from the receive-antenna conductor layers 23 to the semiconductor component 3. The inner ends 211 and 221 of the high-frequency conductor layers 21 and 22 denote the end sections of the high-frequency conductor layers 21 and 22 that face the bottom surface 301 of the semiconductor component 3.The outer ends 212 and 222 of the high-frequency conductor layers 21 and 22 designate the end sections which are located opposite the inner ends 211 and 221 of the high-frequency conductor layers 21 and 22 and away from the semiconductor component 3.

[0031] As in the Fig. 1 and Fig. As shown in Figure 2, all of the high-frequency conductor layers 21 and 22 are positioned on the substrate 2 in the first direction D1 originating from the semiconductor component 3. The majority of high-frequency conductor layers 21 and 22 are composed of a majority of first high-frequency conductor layers 21 extending in the first direction D1 from the first side surface 302A of the semiconductor component 3, and a majority of second high-frequency conductor layers 22 extending outwards in the second direction D2 from the pair of second side surfaces 302B, which are arranged at right angles to the first side surface 302A of the semiconductor component 3, and bending in the first direction D1. The majority of second high-frequency conductor layers 22 are arranged on both sides in the second direction D2, with the majority of first high-frequency conductor layers 21 inserted between the sides.The outer ends 212 and 222 of all of the first high-frequency conductor layers 21 and the second high-frequency conductor layers 22 are positioned in the first direction D1 starting from the first side surface 302A of the semiconductor component 3.

[0032] This arrangement, in which the high-frequency conductor layers 21 and 22 are collected in the first direction D1, allows for a reduction in the size of the device.

[0033] As in Fig. As shown in Figure 3, any plurality of first high-frequency conductor layers 21 and any plurality of second high-frequency conductor layers 22 can be connected to the transmitting antenna conductor layers 23, or these can be connected to the receiving antenna conductor layers 23. The antenna conductor layers 23 connected to the first high-frequency conductor layers 21 in this embodiment extend from the first high-frequency conductor layers 21 in the third direction D3, which is opposite to the first direction D1. The antenna conductor layers 23 connected to the second high-frequency conductor layers 22 in this embodiment extend from the second high-frequency conductor layers 22 in the first direction D1.Each antenna conductor layer 23 has a main body 231 extending in the first direction D1, and extensions 232 projecting from the body in both of the second directions D2.

[0034] This arrangement allows the antenna conductor layers 23 to be suitably arranged in a confined space on the rear surface 202 of the substrate 2.

[0035] As in Fig. As shown in Figure 2, the first high-frequency conductor layers 21, which are arranged adjacent to the second high-frequency conductor layers 22, extend from the first side surface 302A in the first direction D1 and bend outwards in the second direction D2 towards the second high-frequency conductor layers 22. More precisely, the first high-frequency conductor layer 21 (which is shown in Figure 2) extends Fig. 2 (specified by 21A), which is positioned in the second direction D2 to the right and is arranged adjacent to the second high-frequency conductor layer 22, which is positioned in the second direction D2 to the right, extending from the first side surface 302A in the first direction D1 and bending outwards towards the right second high-frequency conductor layer 22 in the second direction D2 to the right. In other words, the first high-frequency conductor layer 21, which is positioned in the second direction D2 to the right, in this embodiment extends in the first direction D1 from the first side surface 302A near the inner end 211, bends halfway to the right in the second direction D2 between the inner end 211 and the outer end 212, and extends in the first direction D1 near the outer end 212. It should be noted that the second direction D2 to the right is the direction to the right in Fig. 2 is.

[0036] This arrangement allows the front surface 201 of the substrate 2 to have a space for the application of the adhesive 4 between the first high-frequency conductor layer 21, which lies to the right in the second direction D2, and the second high-frequency conductor layer 22, which lies to the right in the second direction D2.

[0037] The first high-frequency conductor layer 21 (which is in Fig. 2 (specified by 21A), which is positioned to the left in the second direction D2 and is adjacent to the second high-frequency conductor layer 22, which is also positioned to the left in the second direction D2, extends from the first side surface 302A in the first direction D1 and bends outwards towards the left second high-frequency conductor layer 22 in the second direction D2. In other words, the first high-frequency conductor layer 21, which is positioned to the left in the second direction D2, in this embodiment extends in the first direction D1 from the first side surface 302A near the inner end 211, bends to the left in the second direction D2 halfway between the inner end 211 and the outer end 212, and extends in the first direction D1 near the outer end 212.

[0038] This arrangement allows the front surface 201 of the substrate 2 to have a space for the application of the adhesive 4 between the first high-frequency conductor layer 21, which lies to the left in the second direction D2, and the second high-frequency conductor layer 22, which lies to the left in the second direction D2.

[0039] Between the first high-frequency conductor layer 21, which lies to the right in the second direction D2, and the first high-frequency conductor layer 21, which lies to the left in the second direction D2, is the middle first high-frequency conductor layer 21 (which is in Fig. 2 (specified by 21B) is positioned at the midpoint of the width in the second direction D2, and extends straight in the first direction D1.

[0040] As in the Fig. 1 and Fig. As shown in Figure 2, at least two outer ends 212 and 222 of all the high-frequency conductor layers 21 and 22 are arranged in the second directions D2, which are orthogonal to the first direction D1 in the plane of the front surface 201 of the substrate 2. In this embodiment, the outer ends 212 and 222 of all the high-frequency conductor layers 21 and 22 are aligned in a row in the second directions D2, which are orthogonal to the first direction D1 in the plane of the front surface 201 of the substrate 2.

[0041] This arrangement allows the antenna conductor layers 23 to be connected to the outer ends 212 and 222 of the majority of high-frequency conductor layers 21 and 22, which are aligned in a row. The antenna conductor layers 23 can thus be designed such that they have a suitably regulated length, which allows the antenna conductor layers 23 to be arranged compactly in a confined space.

[0042] The high-frequency conductor layers 21 and 22 on the front surface 201 of the substrate 2 are surrounded by ground conductor layers 24. The ground conductor layers 24 surrounding the high-frequency conductor layers 21 and 22 are connected to ground. The ground conductor layers 24 are arranged completely around the ends and both sides of the high-frequency conductor layers 21 and 22 in the plane of the front surface 201. This arrangement reduces attenuation of high-frequency signals in the high-frequency conductor layers 21 and 22. Fig. Figure 2 illustrates the high-frequency conductor layers 21 and 22, which are sandwiched between the ground conductor layers 24, their surfaces being covered with resistive layers 25.

[0043] To prevent unwanted attenuation of high-frequency signals, the outer ends 212 and 222 of the high-frequency conductor layers 21 and 22 are connected to the ground conductor layers 24 and the antenna conductor layers 23 in this embodiment. The outer ends 212 and 222 can also be configured as end sections 241 of the ground conductor layers 24, which are aligned in a row in the second directions D2. Other conductor layers 20

[0044] As in Fig. As shown in Figure 2, various conductive layers 20, other than the high-frequency conductive layers 21 and 22, are provided on the front surface 201 of the substrate 2. Electronic components are arranged on the front surface 201 or the rear surface 202 of the substrate 2 and electrically connected to the semiconductor component 3. The conductive layers 20, which are other than the high-frequency conductive layers 21 and 22, are used to electrically connect the semiconductor component 3 and the electronic components. The conductive layers 20, which are other than the high-frequency conductive layers 21 and 22, are arranged on the front surface 201 of the substrate 2 in a space that is positioned in the third direction D3 opposite the space in the first direction D1 in which the high-frequency conductive layers 21 and 22 are arranged.In other words, the conductor layers 20, which are different from the high-frequency conductor layers 21 and 22, are arranged on the front surface 201 of the substrate 2 such that they extend outwards from the third side surface 302C, which is located opposite the first side surface 302A of the semiconductor component 3, and from parts of the pair of second side surfaces 302B, which are positioned in the third direction D3.

[0045] As in the Fig. 6, Fig. 7 to Fig. As shown in Figure 8, the surfaces of the conductor layers 20, which are different from the high-frequency conductor layers 21 and 22, as well as the surfaces of the ground conductor layers 24 on the front surface 201 of the substrate 2, are covered with resistive layers 25, which serve as protective films protecting the copper foil that forms the conductor layers 20 or the ground conductor layers 24. The surfaces of the high-frequency conductor layers 21 and 22, as well as the antenna conductor layers 23, are not covered with resistive layers 25 in order to avoid attenuating the high-frequency signals. Fig. 6, Fig. 7 to Fig. Figure 8 are schematic cross-sectional views viewed in a direction orthogonal to the first direction D1 or the second direction D2. Conductive component 35

[0046] As in the Fig. 6, Fig. 7 to Fig. As shown in Figure 8, the conductive components 35 are also referred to as solder balls and are solder materials that electrically connect the conductor of the semiconductor component 3 and the conductor layers 20, 21, and 22. The conductive components 35 are provided on the conductor in the bottom surface 301 of the semiconductor component 3. When the semiconductor component 3 is arranged above the substrate 2, the conductive components 35 come into contact with the conductor layers 20, 21, and 22 of the substrate 2 and are joined together with the conductor layers 20, 21, and 22. Semiconductor component 3

[0047] As in the Fig. 6, Fig. 7 to Fig. As shown in Figure 8, the semiconductor component 3 includes a circuit section 31 that generates a high-frequency signal, a molded resin section 32, which is a resin that covers the circuit section 31, and a base resin section 33, which is provided in the base surface 301 of the semiconductor component 3. The circuit section 31 includes semiconductor elements that serve, for example, as a synthesizer that generates a high-frequency signal, a mixing device that mixes a transmitting wave and a receiving wave, an analog-to-digital converter that converts an analog signal into a digital signal, and a digital signal processor that analyzes digital signals.

[0048] The base resin section 33 is made of a material different from that of the molded resin section 32, or more precisely, a resin with a lower elastic modulus than that of the molded resin section 32. The molded resin section 32 and the base resin section 33 are, for example, made of thermosetting resins. An elastic modulus indicates the resistance of an object to deformation. An elastic modulus E is expressed as σ / ε, which is the value determined by dividing a load σ on an object by a strain ε on the object. The base resin section 33, which has a low elastic modulus, can be easily deformed, and it is less likely to be held in place by the adhesive 4.

[0049] As in Fig. As shown in Figure 4, the semiconductor component 3 has the shape of a rectangular solid and includes the bottom surface 301, which faces the front surface 201 of the substrate 2, an upper surface 303, which is positioned opposite the bottom surface 301, and the four side surfaces 302A, 302B, and 302C, which are positioned between the bottom surface 301 and the upper surface 303. The semiconductor component 3 has a rectangular shape, with the bottom surface 301 and the upper surface 303 occupying the largest area.

[0050] The resin forming substrate 2 has a surface roughness represented as a mean arithmetic roughness Ra in the range of 0.4 to 0.6 µm, whereas the resin forming substrate 2 has a maximum height Rz in the range of 2 to 3 µm. The resin forming the formed resin section 32 of semiconductor component 3 has a mean arithmetic roughness Ra in the range of 0.6 to 1.0 µm, whereas the resin forming the formed resin section 32 of semiconductor component 3 has a maximum height Rz in the range of 3 to 6 µm. If the front surface 201 of the substrate 2 and the formed resin section 32 of the semiconductor component 3 each have a mean arithmetic roughness Ra and a maximum height Rz within the aforementioned areas, the adhesive 4 can be easily applied to the substrate 2 and the formed resin section 32. Adhesive 4

[0051] As in the Fig. 4 and Fig. As shown in Figure 5, the adhesive 4 supports the conductive components 35, which join the conductor of the semiconductor component 3 to the conductive layers 20, 21, and 22 on the substrate 2, preventing the semiconductor component 3 from being displaced relative to the substrate 2. The adhesive 4 is made of a curable resin that undergoes essentially no plastic deformation when heated. In this embodiment, the adhesive 4 is made using epoxy resin as the thermosetting resin. The adhesive 4 can also be made of a photocurable resin. The adhesive 4 is also applied to the side surfaces 302A, 302B, and 302C of the semiconductor component 3 to prevent the semiconductor component 3 from being displaced relative to the substrate 2 in the plane of the front surface 201.

[0052] As in the Fig. 6, Fig. 7 to Fig. As shown in Figure 8, the adhesive 4 extends continuously from the bottom surface 301 of the semiconductor component 3 to the side surfaces 302A, 302B, and 302C, bonding the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3 to the front surface 201 of the substrate 2. In other words, the adhesive 4 extends continuously from the bottom surface 301 of the semiconductor component 3 and the front surface 201 of the substrate 2 to the side surfaces 302A, 302B, and 302C of the semiconductor component 3. The adhesive 4 can be in contact with the front surface 201 of the substrate 2 as well as with the surfaces of the resistive layers 25, which protect the conductive layers 20 on the front surface 201 of the substrate 2.

[0053] As in Fig. As shown in Figure 4, in this embodiment the adhesive 4 is distributed in such a way as to cover four corners 301A that are contained in the bottom surface 301 of the semiconductor component 3. More precisely, the adhesive 4 is in contact with the four corners 301A of the bottom surface 301 of the semiconductor component 3, the side surfaces 302A, 302B, and 302C of the semiconductor component 3 are arranged adjacent to each of the four corners 301A, and areas on the front surface 201 of the substrate 2 include the locations facing the four corners 301A. This arrangement achieves a balanced application of the adhesive 4 to the semiconductor component 3 and allows the semiconductor component 3 to be stably supported relative to the substrate 2 using a small amount of adhesive 4.The adhesive 4, which is provided at each corner 301A of the bottom surface 301 of the semiconductor component 3, bonds the bottom surface 301 and the side surfaces 302A, 302B and 302C of the semiconductor component 3 to the front surface 201 of the substrate 2.

[0054] Around the four corners 301A of the semiconductor component 3, the continuously applied straight adhesive 4 has a length L in the range of 0.5 to 1.2 mm along one of the side surfaces 302A, 302B, and 302C in the plane of the front surface 201 of the substrate 2. For the continuously applied adhesive 4 with a length L less than 0.5 mm, the adhesive 4 cannot provide sufficient strength to bond the semiconductor component 3 to the substrate 2. For the continuously applied adhesive 4 with a length L greater than 1.2 mm, the large area of ​​the adhesive 4 makes it difficult to position the semiconductor component 3 and the conductor layers 20, 21, and 22 in a confined space.

[0055] The adhesive 4 is not in contact with the high-frequency conductor layers 21 and 22, with a gap of 0.1 mm or more being formed between the adhesive 4 and the high-frequency conductor layers 21 and 22. If the gap between the adhesive 4 and the high-frequency conductor layers 21 and 22 is less than 0.1 mm, the high-frequency signals may be attenuated.

[0056] As in the Fig. 4 and Fig. As shown in Figure 5, a section of the adhesive 4 is in contact with an area on the front surface 201 of the substrate 2, which does not include the locations of the majority of formed high-frequency conductor layers 21 and 22 and is sandwiched between the first high-frequency conductor layer 21 and the second high-frequency conductor layer 22, and extends to the side surfaces 302A and 302B of the semiconductor component 3. This arrangement allows the adhesive 4 to be placed in a suitable position that is not in contact with the high-frequency conductor layers 21 and 22 on the front surface 201 of the substrate 2.

[0057] A section of the adhesive 4 is in contact with an area on the front surface 201 that does not include the areas of the majority of formed high-frequency conductive layers 21 and 22, which include the areas facing a corner 301A of the bottom surface 301 of the semiconductor component 3, and is sandwiched between the first high-frequency conductive layer 21 and the second high-frequency conductive layer 22, and extends to the side surfaces 302A and 302B of the semiconductor component 3 that are adjacent to corner 301A. The contact of the section of the adhesive 4 with the side surfaces 302A and 302B that are adjacent to corner 301A of the semiconductor component 3 can effectively prevent the semiconductor component 3 from being displaced relative to the substrate 2 in the plane of the front surface 201.

[0058] As in the Fig. 6, Fig. 7 to Fig. As shown in Figure 8, the adhesive 4 is preferably provided extending from the bottom surface 301 of the semiconductor component 3 up to the highest possible position in the vertical direction H on the side surfaces 302A, 302B, and 302C of the semiconductor component 3 to effectively prevent the semiconductor component 3 from being displaced relative to the substrate 2 in the plane of the front surface 201. If the semiconductor component 3 has a thickness T in the vertical direction H, which is orthogonal to the bottom surface 301, the adhesive 4 extends from the bottom surface 301 to a thickness within the range of 1 / 3 T up to and including T with the side surfaces. This arrangement can effectively prevent the semiconductor component 3 from being displaced relative to the substrate 2 in the plane of the front surface 201.

[0059] If the adhesive 4 is in contact with the side surface 302A, 302B or 302C in the vertical direction H starting from the bottom surface 301 to a thickness of less than 1 / 3 T of the side surface, it cannot be sufficiently prevented that the semiconductor component 3 is displaced relative to the substrate 2 in the plane of the front surface 201.

[0060] As in Fig. As shown in Figure 9, the adhesive 4 can be in continuous contact in the vertical direction H with the entire side surfaces 302A, 302B and 302C of the semiconductor component 3, or, in other words, with the side surfaces 302A, 302B and 302C, the bottom surface 301 and the top surface 303 of the semiconductor component 3. The adhesive 4 can extend from the side surfaces 302A, 302B and 302C of the semiconductor component 3 to the top surface 303 of the semiconductor component 3.

[0061] The adhesive 4 is in contact with the base resin section 33, which is positioned in the base surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3, and with the formed resin section 32, which is positioned in the side surfaces of the semiconductor component 3. The base resin section 33 in the semiconductor component 3 is thin. The base resin section 33 extends from the base surface 301 to a thickness of less than 1 / 3 T of the side surfaces 302A, 302B, and 302C.

[0062] The base resin section 33, which has a low elastic modulus, can be easily deformed, and it is less likely to be held by the adhesive 4. In contrast, the formed resin section 32, which has a higher elastic modulus than the base resin section 33, is more likely to be held by the adhesive 4 than the base resin section 33. Thus, the contact of the adhesive 4 with both the formed resin section 32 and the base resin section 33 can enhance the effect of the adhesive 4 in holding the semiconductor component 3.

[0063] In this embodiment, the adhesive 4 has a viscosity that is maximized to prevent it from simply spreading on the front surface 201 of the substrate 2, thereby increasing the holding area to the highest possible position on the side surfaces 302A, 302B, and 302C of the semiconductor component 3. In this embodiment, the aspect ratio of the adhesive 4 is defined using the dimension in the vertical direction H and the dimension in the first direction D1 or the second direction D2 to indicate that the adhesive 4 is less likely to spread horizontally and accumulate vertically.

[0064] A typical aspect ratio is expressed as the ratio between a horizontal dimension and a vertical dimension in cross-section. However, the adhesive 4 is applied locally to the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3. Furthermore, the aspect ratio varies across different cross-sections of the adhesive 4. Thus, instead of using cross-sectional values, the aspect ratio of the adhesive 4 is expressed by the ratio between the maximum dimensions in the vertical direction H and the first direction D1 or the second direction D2. Along the total length of the adhesive 4 in the vertical direction H, the maximum dimension in the vertical direction H is taken at the point of the adhesive 4 in contact with the side surface 302A, 302B, or 302C, and the maximum dimension in the first direction D1 or the second direction D2 is measured from the entire length of the adhesive 4 in the vertical direction H.The entire lateral length of the adhesive was measured at 4.

[0065] As in the Fig. 6, Fig. 7 to Fig. As shown in Figure 8, the aspect ratio Y / X of the adhesive 4 is defined as described below. The lateral dimension of the adhesive 4 is defined as the maximum width of the region of the adhesive 4 in contact with the front surface 201 of the substrate 2, extending from the side surface 302A, 302B, or 302C of the semiconductor component 3 to the end in the first direction D1 or the second direction D2, which is orthogonal to the side surface 302A, 302B, or 302C. At the region of the adhesive 4 in contact with the side surface 302A, 302B, or 302C of the semiconductor component 3, the maximum height, extending from the bottom surface 301 of the semiconductor component 3 in the height direction H, which is orthogonal to the bottom surface 301, is specified by Y.

[0066] The aspect ratio Y / X of the adhesive 4 is greater than or equal to 0.3. An aspect ratio Y / X of 0.3 represents the limit within which the adhesive 4 can spread on the front surface 201. If the aspect ratio Y / X of the adhesive 4 is less than 0.3, it is difficult to apply the adhesive 4 to the highest possible position on the side surfaces 302A, 302B, and 302C of the semiconductor component 3. The aspect ratio Y / X of the adhesive 4 is preferably greater than or equal to 1.

[0067] As in Fig. As shown in Figure 8, the adhesive 4 can have a maximum height Y in the height direction H at the point that is in contact with the side surface 302A, 302B, or 302C of the semiconductor component 3. As shown in the Fig. 6 or Fig. As shown in Figure 7, the adhesive 4 can be highest in the height direction H at a location other than the location that is in contact with the side surface 302A, 302B, or 302C of the semiconductor component 3. Furthermore, the maximum height Y of the adhesive 4 in this case is defined as the maximum height at the location that is in contact with the side surface 302A, 302B, or 302C of the semiconductor component 3.

[0068] The aspect ratio Y / X of the adhesive 4 can increase by increasing the viscosity of the adhesive 4 applied to the substrate 2 and the semiconductor component 3. The viscosity of the adhesive 4 can, for example, fall within the range of 217 to 743 Pa s. The adhesive 4 contains resin components and filler as filler materials. The viscosity of the adhesive 4 is adjusted by adjusting the filler content of the adhesive 4. More precisely, the viscosity of the adhesive 4 increases as the filler content of the adhesive 4 is increased.

[0069] The thixotropic value of adhesive 4 can be expressed as a value greater than or equal to 3.1 according to JIS K6800. Thixotropy, or a thixotropic property, is an index indicating the property that something becomes less viscous when agitated and more viscous when allowed to stand after agitation. Thixotropy is expressed as the viscosity ratio between two states with different rotational or agitation excitations, and a higher thixotropic value indicates that agitation more significantly alters a viscosity. A thixotropic value less than or equal to 4.1 is sufficient to maintain adequate fluidity.

[0070] The Fig. 6, Fig. 7, Fig. 8 to Fig. Figure 9 illustrates the attachment of the semiconductor component 3 to the substrate 2 using adhesives 4, which have different viscosities and thus different aspect ratios. Fig. In 6, the aspect ratio Y / X of the adhesive 4 is slightly larger than 0.3, and the adhesive 4 is in contact with a large area on the front surface 201 of the substrate 2, starting from the bottom surface 301 of the semiconductor component 3 and the side surfaces 302A, 302B and 302C. Fig. 9 The adhesive 4 is provided in the vertical direction H over the entire side surfaces 302A, 302B and 302C of the semiconductor component 3, covering the semiconductor component 3 from the bottom surface 301 to the height of the upper surface 303. In the Fig. 6 and Fig. 9 the adhesive 4 reaches the surface of the resistive layer 25 on the ground conductor layer 24, which surrounds the high-frequency conductor layers 21 and 22.

[0071] In Fig. In 7, the Y / X aspect ratio of the adhesive 4 is approximately 0.5, and the adhesive 4 is contained by the ground conductor layer 24, which surrounds the high-frequency conductor layers 21 and 22 on the front surface 201 of the substrate 2. In this case, a portion of the adhesive 4 is contained by a barrier 26 formed near corner 301A of the bottom surface 301 of the semiconductor component 3 by the edge of the ground conductor layer 24 and the edge of the resistive layer 25 on the front surface 201 of the substrate 2. This arrangement controls the spread of the adhesive 4 on the front surface 201 of the substrate 2 and prevents the adhesive 4 from coming into contact with the high-frequency conductor layers 21 and 22.

[0072] In Fig. In Figure 8, the Y / X aspect ratio of the adhesive 4 is approximately 2, and the adhesive 4 is positioned as high as possible on the side surfaces 302A, 302B, and 302C of the semiconductor component 3. This arrangement also prevents the adhesive 4 from coming into contact with the high-frequency conductor layers 21 and 22.

[0073] The adhesive 4 does not need to be spread in a way that covers the four corners 301A of the bottom surface 301 of the semiconductor component 3. As shown in Fig. As shown in Figure 10, the adhesive 4 can be divided and applied to the bottom surface 301 and the side surfaces 302A and 302B on both sides of each of the four corners 301A of the bottom surface 301 of the semiconductor component 3. Furthermore, for example, an inkjet printer can be used to form excellent protective walls around the areas on the front surface 201 of the substrate 2 that face the four corners 301A of the bottom surface 301 of the semiconductor component 3. The excellent protective walls have the form of containment (surrounding the corners 301A) and prevent the adhesive 4 from leaking out. The adhesive 4 can be poured into the interior of the excellent protective walls. Application of adhesive 4

[0074] In the present embodiment, the adhesive 4 is advantageously applied to the substrate 2 and the semiconductor component 3 to prevent the adhesive 4 from adhering to the high-frequency conductive layers 21 and 22. After the conductive components 35, which are provided on the bottom surface 301 of the semiconductor component 3, have been joined with the conductive layers 20, 21 and 22 on the substrate 2, the adhesive 4 is ejected from a nozzle and applied to an area on the substrate 2 near the semiconductor component 3.

[0075] To eliminate the problem of the adhesive 4 forming strings from the nozzle tip during application, the stringy material can be dripped onto the adhesive 4 by temporarily retracting the nozzle over the adhesive 4 after application. This prevents the stringy material of the adhesive 4 from coming into contact with the high-frequency conductor layers 21 and 22. This arrangement, in which the adhesive 4 does not come into contact with the high-frequency conductor layers 21 and 22, can reduce attenuation of high-frequency signals in these layers, or, in other words, conductor layer loss.

[0076] To reduce uneven application, the application of the adhesive 4, which is sprayed or ejected from the nozzle, can be started from an area that is closer to the high-frequency conductor layers 21 and 22. Difference between linear expansion coefficients

[0077] The radar device 1 includes components such as the substrate 2, the conductive layers 20, 21 and 22, the semiconductor component 3, the conductive components 35 and the adhesive 4, which are made of different materials and have different coefficients of linear expansion. In a process in which the radar device 1 is heated and cooled, the differences between the coefficients of linear expansion of the components cause thermal stresses that affect the semiconductor component 3. Functional effects

[0078] In the radar device 1 according to this embodiment, the high-frequency conductor layers 21 and 22 and the adhesive 4 can be arranged advantageously relative to the semiconductor component 3.

[0079] The majority of the entire second high-frequency conductor layers 22 extend outwards from the second side surfaces 302B of the semiconductor component 3 in the second directions D2, bend in the first direction D1 of the front surface 201 of the substrate 2, and extend in the first direction D1 beyond the first side surface 302A of the semiconductor component 3. The outer ends 212 of all the first high-frequency conductor layers 21 and the outer ends 222 of all the second high-frequency conductor layers 22 are arranged in the first direction D1 from the first side surface 302A of the semiconductor component 3 and aligned in a row in the second directions D2.

[0080] The arrangement allows the attenuation of high-frequency signals to be reduced by minimizing the length of the majority of formed high-frequency conductor layers 21 and 22, and allows the size of the device to be reduced by arranging the majority of high-frequency conductor layers 21 and 22 compactly.

[0081] The adhesive 4 is in contact with the four corners 301A of the bottom surface 301 of the semiconductor component 3 and the side surfaces 302A, 302B, and 302C, which are adjacent to the four corners 301A, and is in contact with the front surface 201 of the substrate 2, except at the locations of the majority of formed high-frequency conductive layers 21 and 22. This arrangement enables the adhesive 4 to hold the side surfaces 302A, 302B, and 302C of the semiconductor component 3, even when the semiconductor component 3 is subjected to thermal stresses due to differences in the linear expansion coefficients of components such as the substrate 2, the conductive layers 20, 21, and 22, the semiconductor component 3, the conductive components 35, and the adhesive 4.Thus, the semiconductor component 3 cannot be displaced relative to the substrate 2 in a direction parallel to the front surface 201 of the substrate 2, which prevents, for example, cracking of the conductive components 35. This can extend the service life of the conductive components 35, which are formed from solder.

[0082] Accordingly, the radar device 1 according to the present embodiment enables a suitable arrangement of the high-frequency conductor layers 21 and 22 and the adhesive 4 relative to the semiconductor component 3 in order to reduce attenuation of high-frequency signals, the size of the device and cracking due to thermal stress.

[0083] The radar device 1 according to the present embodiment is installed on a vehicle as a radar monitoring system. On a vehicle, there is a greater need for a smaller size of the radar device 1 to prevent it from interfering with other installed components. On a vehicle, the radar device 1, in which the high-frequency conductive layers 21 and 22 and the adhesive 4 are suitably arranged, exhibits more pronounced functional effects. On a vehicle, the radar device 1 is more strongly affected by heat or vibration, and thus the effect of preventing, for example, cracking in the conductive components 35 becomes more apparent. Second embodiment

[0084] A radar device 1 according to the present embodiment includes high-frequency conductor layers 21 and 22 and an adhesive 4, which are arranged differently than in the first embodiment.

[0085] As in Fig. As shown in Figure 11, the adhesive 4 can be applied to surfaces other than the four corners 301A of the bottom surface 301 of the semiconductor component 3. Furthermore, in this case, the adhesive 4 is applied to the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3, as well as the front surface 201 of the substrate 2. In this case, the application of the adhesive 4 can be facilitated by reducing the amount of adhesive 4 required.

[0086] The adhesive 4 can be applied to the four corners 301A of the bottom surface 301 of the semiconductor component 3 and to the four sides of the bottom surface 301 of the semiconductor component 3, except for the areas of the formed high-frequency conductor layers 21 and 22. In this case, the adhesive 4 is also applied to the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3, as well as to the front surface 201 of the substrate 2. In this case, the adhesive 4 can bond the semiconductor component 3 more firmly to the substrate 2.

[0087] As in Fig. As shown in Figure 12, the high-frequency conductor layers 21 and 22 can be located on the rear surface 202 of the substrate 2. In this case, the conductive components 35 on the bottom surface 301 of the semiconductor component 3 are electrically connected to the high-frequency conductor layers 21 and 22 on the rear surface 202 of the substrate 2 via conductors in through-holes formed in the substrate 2. In this case, the antenna conductor layers 23 can be located on the front surface 201 of the substrate 2. Furthermore, in this case, the adhesive 4 is applied to the bottom surface 301 and the side surfaces 302A, 302B, and 302C of the semiconductor component 3, as well as to the front surface 201 of the substrate 2. This structure creates additional space on the front surface 201 of the substrate 2 and increases the flexibility regarding the arrangement of elements such as the antenna conductor layers 23.

[0088] As in Fig.As shown in Figure 13, the majority of high-frequency conductor layers 21 and 22 can include the high-frequency conductor layers 28, which need not be provided on the front surface 201 and the rear surface 202 of the substrate 2 in the first direction D1. In this case, a high-frequency conductor layer set 27 of a majority of high-frequency conductor layers 21 and 22 can be provided on the front surface 201 or the rear surface 202 of the substrate 2 in the first direction D1, whereas the remaining high-frequency conductor layers 28 can be provided on the front surface 201 or the rear surface 202 of the substrate 2 in the second direction D2 or the third direction D3.The outer ends 212 and 222 of the high-frequency conductor layers 21 and 22, which are included in the high-frequency conductor layer set 27, can be arranged in the first direction D1 starting from the first side surface 302A of the semiconductor component 3, whereas the outer ends of the remaining high-frequency conductor layers 28 can be arranged in the third direction D3 starting from the first side surface 302A. This structure can increase the flexibility with regard to the arrangement of elements such as the high-frequency conductor layers 21, 22 and 28, as well as the antenna conductor layers 23.

[0089] The other components and functional effects of the radar device 1 according to the present embodiment are the same as in the first embodiment. Furthermore, in this embodiment, the same reference numerals as those used in the first embodiment denote the same components as in the first embodiment.

[0090] The radar device 1 can be installed in multiple positions within a vehicle. In this case, multiple radar devices 1 can be used to form a radar surveillance system on the vehicle. The radar device 1 does not have to be used for a vehicle, but can also be used for other means of transport such as a train or an aircraft.

[0091] The present disclosure is not limited to the embodiments mentioned, but can be implemented in different embodiments without deviating from their concept and scope. The present disclosure includes various modifications and changes that fall within the scope of equivalence. The configurations of embodiments can also be combined. Furthermore, various combinations and forms of components that arise from the present disclosure also fall within the technical scope of the disclosure.

Claims

[1] Radar device (1) comprising: a substrate (2) comprising a plurality of conductor layers (20, 21, 22) arranged on a front surface (201) or a rear surface (202), wherein the conductor layers include a plurality of high-frequency conductor layers (21, 22) for transmitting a high-frequency signal; a semiconductor component (3) which is arranged facing the front surface of the substrate, is in contact with the majority of conductor layers on the substrate via conductive components (35), and is configured to generate a high-frequency signal; and an adhesive (4) configured to bond the semiconductor component to the front surface of the substrate, wherein the semiconductor component has a bottom surface (301) and a plurality of side surfaces (302A, 302B, 302C) which includes a first side surface (302A) which is directed in a first direction (D1) from a central section to an edge in a plane of the front surface or the rear surface, all of the plurality of high-frequency conductor layers or a high-frequency conductor layer set (27) which is included in the plurality of high-frequency conductor layers, at least high-frequency conductor layers which bend in the plane of the front surface or the rear surface and extend on the front surface or the rear surface from inner ends (211, 221) facing the bottom surface (301) to outer ends (212, 222) positioned in the first direction from the first side surface (302A), and The adhesive is in contact with the front surface except at points where the majority of formed high-frequency conductor layers are in contact with the front surface, and with the side surfaces of the semiconductor component. [2] Radar device according to claim 1, wherein the plurality of high-frequency conductor layers comprises the following: one or more first high-frequency conductor layers (21) extending in the first direction from the first side surface, and one or more second high-frequency conductor layers (22) extending outwards in second directions (D2) orthogonal to the first side surface from a pair of second side surfaces (302B) extending in the plane of the front surface and bending in the first direction, wherein the outer ends of all of the first high-frequency conductor layers and the second high-frequency conductor layers are positioned in the first direction starting from the first side surface of the semiconductor component. [3] Radar device according to claim 1, wherein the plurality of high-frequency conductor layers or the high-frequency conductor layer set comprises the following: one or more first high-frequency conductor layers (21) extending in the first direction from the first side surface, and one or more second high-frequency conductor layers (22) extending outwards in second directions (D2) orthogonal to the first side surface from a pair of second side surfaces (302B) extending in the plane of the front surface and bending in the first direction, wherein a section of the adhesive is in contact with an area on the front surface of the substrate that does not include the locations of the majority of high-frequency conductor layers, the area is sandwiched between the first high-frequency conductor layer and the second high-frequency conductor layer, and extends to the side surfaces of the semiconductor component. [4] Radar device according to claim 2 or 3, wherein the first high-frequency conductor layers, which are arranged adjacent to the second high-frequency conductor layers, extend from the first side surface in the first direction and bend outwards in the second direction towards the second high-frequency conductor layers, and a section of the adhesive is in contact with an area on the front surface that does not include the locations of the majority of high-frequency conductor layers, which includes a location that is arranged facing a corner (301A) of the bottom surface of the semiconductor component, and is sandwiched between the first high-frequency conductor layer and the second high-frequency conductor layer, and extends to the side surfaces that are adjacent to the corner. [5] Radar device according to any one of claims 1 to 4, wherein the outer ends of the plurality of high-frequency conductor layers or the high-frequency conductor layer set include at least outer ends that are aligned in a direction orthogonal to the first direction in the plane of the front surface of the substrate. [6] Radar device according to any one of claims 1 to 5, wherein the semiconductor component includes a circuit section (31) configured to generate the high-frequency signal, a molded resin section (32) comprising a resin covering the circuit section, a bottom resin section (33) provided in the bottom surface of the semiconductor component comprising a material different from that of the molded resin section, and a resin having an elastic modulus lower than that of the molded resin section, and the adhesive is in contact with the bottom resin section, which is positioned in the bottom surface and side surfaces of the semiconductor component, and the molded resin section, which is positioned in the side surfaces of the semiconductor component. [7] Radar device according to any one of claims 1 to 6, wherein the outer ends of the plurality of high-frequency conductor layers are connected to antenna conductor layers (23) provided on the front surface or the rear surface of the substrate. [8] Radar device according to any one of claims 1 to 7, wherein the conductor layers, which are different from the majority of high-frequency conductor layers, each include a resistive layer (25) on the front surface of the substrate to protect the conductor layer on its surface, and at least part of the adhesive is contained by a barrier (26) which has an edge of the conductive layer and an edge of the resistive layer on the front surface of the substrate near the corner of the bottom surface of the semiconductor component. [9] Radar device according to any one of claims 1 to 8, wherein the adhesive is in contact with the side surfaces starting from the bottom surface to a thickness greater than or equal to 1 / 3 T when the semiconductor component has a thickness T in a direction orthogonal to the bottom surface. [10] Radar device according to any one of claims 1 to 9, wherein if the adhesive has a spot that is in contact with the front surface of the substrate and has a maximum width X extending from the side surface of the semiconductor component to one end in a direction orthogonal to the side surface, and the adhesive has a spot that is in contact with the side surface of the semiconductor component and has a maximum height Y extending from the bottom surface of the semiconductor component in a direction orthogonal to the bottom surface, The adhesive has an aspect ratio Y / X that is greater than or equal to 0.

3. [11] Radar device according to any one of claims 1 to 10, wherein the semiconductor component has the shape of a rectangular solid, and the adhesive is in contact with four corners of the bottom surface of the semiconductor component, the side surfaces of the semiconductor component are adjacent to each of the four corners, and surfaces on the front surface of the substrate include locations facing the four corners. [12] Radar device according to any one of claims 1 to 11, wherein the outer ends of all of the plurality of high-frequency conductor layers are aligned in a direction orthogonal to the first direction in the plane of the front surface of the substrate. [13] Vehicle equipped with the radar device according to any one of claims 1 to 12. [14] Radar monitoring system comprising the radar device according to any one of claims 1 to 12.

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