Substrate transport device, substrate transport method, and computer storage medium

Abstract

The circuit board is transported to the target position with high precision. [Solution] A substrate transport device for transporting substrates, which is provided in a housing common to a heat treatment unit for heat treating the substrates, and transports the substrates to a rotational processing unit that holds and rotates the substrates for processing, and comprises a transport arm that supports and moves the substrates, and a control unit that controls the operation of the transport arm, wherein the control unit obtains the eccentric position of the substrate held by the rotational processing unit with respect to the rotational center of the rotational processing unit based on the maximum and minimum temperatures that can be set as the processing temperature in the heat treatment unit, and adjusts the position of the transport arm when the substrates are handed over to the rotational processing unit based on the eccentric position.

Description

Technical Field

[0001] The present disclosure relates to a substrate transfer device, a substrate transfer method, and a computer storage medium.

Background Art

[0002] Patent Document 1 discloses a technique for stopping a transfer mechanism at a target position.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure transfers a substrate to a target position with high precision.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate transfer device for transferring a substrate, which is provided in a common housing with a heat treatment unit for heat - treating the substrate, and transfers the substrate to a rotary processing unit that holds and rotates the substrate to perform processing. The substrate transfer device includes a transfer arm that supports and moves the substrate, and a control unit that controls the operation of the transfer arm. The control unit acquires an eccentric position of the substrate held by the rotary processing unit with respect to the rotation center of the rotary processing unit based on the maximum temperature and the minimum temperature that can be set as the processing temperature in the heat treatment unit, and adjusts the position of the transfer arm at the time of delivering the substrate to the rotary processing unit based on the eccentric position.

Effects of the Invention

[0006] According to the present disclosure, a substrate can be transferred to a target position with high precision.

Brief Description of the Drawings

[0007] [Figure 1] This is a plan view showing a schematic configuration of a coating and developing apparatus as a substrate processing system equipped with a substrate transport device according to this embodiment. [Figure 2] This diagram shows a schematic representation of the configuration of the central part in the depth direction of a coating and developing apparatus. [Figure 3] This figure shows a schematic configuration of the first stacking block. [Figure 4] This is a schematic diagram of the configuration of the resist film formation module. [Figure 5] This is a diagram illustrating the schematic configuration of the heating module. [Figure 6] This is a side view showing a schematic configuration of the main transport mechanism. [Figure 7] This is a functional block diagram of a control unit according to the first embodiment, and is a functional block diagram relating to the transport of a wafer to a resist film forming module, which is a rotary processing device. [Figure 8] This is a flowchart illustrating an example of the adjustment flow for the handover position according to the first embodiment. [Figure 9] This is a functional block diagram of a control unit according to a second embodiment, relating to the transport of a wafer to a resist film formation module. [Figure 10] This is a flowchart illustrating an example of the adjustment flow for the handover position according to the second embodiment. [Figure 11] This is a plan view showing a schematic configuration of a modified coating and developing apparatus equipped with a substrate transport device according to this embodiment. [Figure 12] This is a schematic diagram of the internal configuration on the front side of the coating and developing apparatus. [Figure 13] This diagram shows a schematic representation of the internal configuration on the back side of the coating and developing apparatus. [Figure 14] This is a longitudinal cross-sectional side view showing a schematic of the internal configuration of the coating and developing apparatus. [Figure 15] This is a side view of the conveying mechanism. [Modes for carrying out the invention]

[0008] The substrate transport apparatus and substrate transport method according to this embodiment will be described below with reference to the drawings. In this specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] <Coating and developing equipment> Figure 1 is a plan view showing a schematic configuration of the coating and developing apparatus 1 as a substrate processing system equipped with a substrate transport device according to this embodiment. Figure 2 is a diagram showing a schematic configuration of the central part in the depth direction (X direction) of the coating and developing apparatus 1. Figure 3 is a diagram showing a schematic configuration of the first lamination processing block, which will be described later. Figure 4 is a diagram showing a schematic configuration of the resist film formation module 21, which will be described later. Figure 5 is a diagram showing a schematic configuration of the heating module 24, which will be described later. Figure 6 is a side view showing a schematic configuration of the main transport mechanism 3A, which will be described later.

[0010] As shown in Figures 1 and 2, the coating and developing apparatus 1 is arranged such that a carrier block D1, a first lamination block D2, a second lamination block D3, and an interface block D4 are aligned in this order in the width direction (Y direction in Figure 1, etc.). Adjacent blocks among the carrier block D1, the first lamination block D2, the second lamination block D3, and the interface block D4 are connected to each other. Furthermore, the carrier block D1, the first lamination block D2, the second lamination block D3, and the interface block D4 are each provided with housings D1a, D2a, D3a, and D4a, respectively, and are partitioned from each other. Inside housings D1a, D2a, D3a, and D4a, transport areas for semiconductor wafers (hereinafter referred to as "wafers") W, which serve as substrates, are formed.

[0011] An exposure device E is connected to the interface block D4 on the opposite side (positive side in the Y direction) from the second stacking block D3.

[0012] In the coating and developing apparatus 1, wafers W are transported while stored in a carrier C, for example, called a FOUP (Front Opening Unify Pod). The first stacking processing block D2 and the second stacking processing block D3 are each partitioned so as to be divided into two vertical sections. Each partitioned section constitutes a processing block having a processing module and a main transport mechanism for transporting wafers W to the processing module. Hereinafter, the lower and upper sections of the first stacking processing block D2, which is partitioned into two vertical sections, will be referred to as processing block 2A and processing block 2B, respectively, and similarly, the lower and upper sections of the second stacking processing block D3, which is partitioned into two sections, will be referred to as processing block 2C and processing block 2D, respectively.

[0013] Processing blocks 2A and 2C are adjacent to each other in the horizontal direction, the width direction (Y direction), and these processing blocks 2A and 2C are sometimes collectively referred to as the lower processing block. Similarly, processing blocks 2B and 2D are adjacent to each other in the horizontal direction, the width direction (Y direction), and these processing blocks 2B and 2D are sometimes collectively referred to as the upper processing block. Figure 1 shows the upper processing block. Each of these upper processing blocks, processing blocks 2B and 2D, is provided with a shuttle (also called a bypass transport mechanism). This shuttle transports the wafer W toward the downstream block in the transport path, without passing through the processing module.

[0014] Note that a "module" refers to the area where the wafer W is placed, excluding the transport mechanism (including the shuttle). Modules that perform processing on the wafer W are described as processing modules as described above, and this processing includes acquiring images for inspection.

[0015] For example, the carrier block D1 has a carrier mounting table 11 at the end opposite to the first lamination processing block D2 (the positive Y-direction side in Figures 1 and 2). The carrier mounting table 11 is provided with multiple mounting plates 12 arranged in the depth direction (X-direction in Figure 1, etc.) on which the carrier C is placed when the carrier C is loaded into or unloaded from the coating and developing apparatus 1.

[0016] Furthermore, the carrier block D1 has a transfer tower T1 at the center of the depth direction (X direction) at the end of the first stacking processing block D2 side (the positive Y direction side in Figure 1, etc.). The transfer tower T1 is constructed by stacking modules, such as transfer modules on which wafers W are temporarily placed, in multiple stages in the vertical direction.

[0017] Furthermore, the carrier block D1 is provided with a transport mechanism 14 in its central part, which is in the horizontal direction (width direction, Y direction), that is movable along a transport path 13 extending in the depth direction (X direction). The transport mechanism 14 is also movable in the vertical direction and around the vertical axis (θ direction), and can transport wafers W between the carrier C on the mounting plate 12 and the modules in the transfer tower T1.

[0018] Furthermore, the carrier block D1 is located on the rear side of the transfer tower T1 (the positive X-direction side in Figure 1, etc.), and a hydrophobic treatment module 15 for performing hydrophobic treatment on the wafer W is provided at the rear end of the carrier block D1. The hydrophobic treatment module 15 may be stacked in multiple stages in the vertical direction.

[0019] Furthermore, the carrier block D1 is provided with a transport mechanism 16 between the transfer tower T1 and the hydrophobic treatment module 15. The transport mechanism 16 is movable in the vertical direction and around the vertical axis (θ direction), and can transport wafers W between modules in the transfer tower T1 and the hydrophobic treatment module 15, and between modules in the transfer tower T1, etc. The transport mechanism 16 can also transport wafers W to the transfer module TRS12B for the shuttle 4B provided in the processing block 2B.

[0020] As shown in Figure 3, the first stacking block D2 has multiple layers (e.g., four or more layers; eight layers in the example shown) of resist film formation modules 21, which serve as liquid processing modules, stacked on the front side (negative side in the X direction). Specifically, the front part of the first stacking block D2 is divided along the vertical direction and partitioned into multiple layers (e.g., four or more; eight layers in the example shown), and a resist film formation module 21 is provided in each layer. Hereinafter, the eight layers will be referred to as layers E1 to E8 from bottom to top. The lower layers E1 to E4 are included in processing block 2A, and the upper layers E5 to E8 are included in processing block 2B.

[0021] As shown in Figures 1 and 3, a wafer transport area 22 is provided on the far side (positive X-direction side) of layers E5 to E8 of the processing block 2B. In the width direction (Y-direction), the transport area 22 is formed in a plan view as a band extending from one end to the other of the processing block 2B, and in the vertical direction, it is formed extending from layer E5 to layer E8. On the far side (positive X-direction side) of the transport area 22, a processing module stack 23 is provided, in which processing modules are stacked in multiple stages (six stages in the example shown in the figures). For example, two processing module stacks 23 are provided with a gap in the width direction (Y-direction). Each processing module stack 23 includes, for example, a heating module 24 as a heat treatment unit that performs heat treatment to remove solvent from the resist film on the wafer W.

[0022] The transport area 22 contains, for example, a part of the main transport mechanism 3B, which functions as a substrate transport device. The main transport mechanism 3B is movable in the width direction (Y direction in the figure), the vertical direction, and around the vertical axis (θ direction), and can transport wafers W to each processing module within the processing block 2B. The main transport mechanism 3B can transport wafers W to modules located at the same height as the processing block 2B among the modules in the transfer tower T1 and the transfer tower T2 described later, which are adjacent to the processing block 2B in the width direction (Y direction in the figure). Furthermore, the main transport mechanism 3B can also transport wafers W to the transfer module TRS for the shuttle 4B provided in the processing block 2B.

[0023] Furthermore, a partitioned, flat space 5B is provided below the processing module stack 23 of the processing block 2B. Space 5B is formed from one end to the other in the width direction (Y direction) of the processing block 2B. The shuttle 4B and shuttle transfer modules TRS12B and TRS12D are provided in space 5B.

[0024] Processing blocks 2A, 2C, and 2D have the same configuration as processing block 2B, except for the differences described later. Each of processing blocks 2A, 2C, and 2D is equipped with a main transport mechanism corresponding to the main transport mechanism 3B, but instead of "B", the same letter used for the processing block having the main transport mechanism will be used in the following explanation and drawings. Specifically, "3A" will be used for the main transport mechanism of processing block "2A". The other main transport mechanisms corresponding to the main transport mechanism 3B can also transport wafers W to the processing module and shuttle transfer module TRS within the processing block in which the main transport mechanism is installed, or to the transfer tower adjacent to the processing block in the width direction (Y direction).

[0025] Furthermore, the code for the space where a shuttle can be installed, corresponding to space 5B mentioned above, uses the same letter as the one attached to the processing block instead of "B". In addition, if a shuttle is provided in a processing block, the code for that shuttle also uses the same letter as the one attached to that processing block. Furthermore, the same letter as the one attached to the processing block where the shuttle is provided is used for the shuttle transfer module TRS. In addition, for the shuttle transfer module TRS used for the same shuttle, 11 is added to the interface block D4 side and 12 to the carrier block D1 side, respectively, before the letter attached to the processing block. To give a concrete example of these code rules, 4D is used for a shuttle provided in processing block 2D, and the transfer modules on the interface block D4 side and carrier block D1 side for this shuttle 4D use TRS11D and TRS12D, respectively.

[0026] One difference between processing block 2A and processing block 2B is that in processing block 2A, the transport area 22 is formed in the vertical direction, extending from layer E1 to layer E4.

[0027] The second stacking block D3 has a configuration substantially the same as the first stacking block D2. Below, the second stacking block D3 will be described, focusing on the differences from the first stacking block D2.

[0028] The processing block 2D of the second stacking processing block D3 has the same positional relationship as processing block 2B in terms of the transport area 22, processing module stack 23, main transport mechanism, and space for installing the shuttle stacked on the processing module. However, layers E5 to E8 of processing block 2D are provided with a developing module for developing the wafer W with a developing solution. The processing module stack 23 of processing block 2D is also provided with a heating module as a heat processing unit, but this heating module is for PEB. Furthermore, the processing module stack 23 of processing block 2D is provided with an inspection module that images the wafer W to determine whether or not there is an abnormality in the wafer W (i.e., acquires an image of the wafer W for inspection). The space 5D for the shuttle in processing block 2D is located at the same height as space 5B and is in communication with space 5B. Space 5D is provided with the shuttle 4D and shuttle transfer modules TRS11B and 11D.

[0029] One difference between processing block 2C and processing block 2D is that in processing block 2C, the transport area 22 is formed in the vertical direction, extending from hierarchy E1 to hierarchy E4.

[0030] A transfer tower T2 is provided at the end of the transport area 22 of the second stacking block D3 that is on the side of the first stacking block D2 (the negative Y-direction side in Figure 1, etc.). In a plan view, the transfer tower T2 is positioned so that a portion of it overlaps with the end of the transport area 22 of the first stacking block D2 that is on the side of the second stacking block D3 (the positive Y-direction side in Figure 1, etc.). The transfer tower T2 is constructed by stacking transfer modules and other modules in multiple stages in the vertical direction.

[0031] Interface block D4 is equipped with a transfer tower T3 in the central part that extends in the depth direction (X direction in Figure 1). This transfer tower T3 is constructed by stacking transfer modules and other modules vertically in multiple stages. Transport mechanisms 31, 32, and 33 are provided on the front side (negative X direction), the back side (positive X direction), and the exposure device E side (positive Y direction in Figure 1, etc.) of the transfer tower T3, respectively. Transport mechanisms 31, 32, and 33 are movable in the vertical direction and around the vertical axis (θ direction).

[0032] On the front side (negative X-direction side) of the transport mechanism 31, there is a back surface cleaning module 35 that supplies cleaning solution to the back surface of the wafer W for cleaning. The back surface cleaning module 35 may be stacked in multiple layers in the vertical direction. On the back side (positive X-direction side) of the transport mechanism 32, there is a post-exposure cleaning module 36 that supplies cleaning solution to the surface of the wafer W after exposure. The post-exposure cleaning module 36 may be stacked in multiple layers in the vertical direction. Each of the transport mechanisms 31 to 33 can transport the wafer W to a module in the transfer tower T3. Furthermore, the transport mechanism 31 can transport the wafer W to the back surface cleaning module 35, the transport mechanism 32 to the post-exposure cleaning module 36, and the transport mechanism 33 to the exposure apparatus E.

[0033] Here, we will describe shuttles 4B and 4D, and the transfer modules (TRS) for each shuttle. Shuttle 4B transports wafer W from processing block 2D to carrier block D1. As shown in Figure 1, of the transfer modules TRS11B and 12B for shuttle 4B, transfer module TRS12B is located at the end of space 5B on the carrier block D1 side (negative Y direction) so that wafer W can be transferred to and from the transport mechanism 14 of carrier block D1. Transfer module TRS11B is located at the end of space 5D on the processing block 2B side (negative Y direction) so that wafer W can be transferred to and from the main transport mechanism 3D of processing block 2D, on the interface block D4 side (positive Y direction) of transfer tower T2.

[0034] Shuttle 4D transports wafer W from processing block 2B to interface block D4. Of the transfer modules TRS11D and 12D for shuttle 4D, transfer module TRS11D is located at the interface block D4 side (positive Y direction) end of space 5D so that wafer W can be transferred to and from the transport mechanism 32 of interface block D4. Transfer module TRS12D is located at the processing block 2D side (positive Y direction) end of space 5B, on the carrier block D1 side (negative Y direction) of the transfer tower T2, so that wafer W can be transferred to and from the main transport mechanism 3B of processing block 2B.

[0035] Shuttle 4A transports wafer W from processing block 2C to carrier block D1. The placement of transfer modules TRS11A and 12A for shuttle 4A is the same as that of transfer modules TRS11B and 12B for shuttle 4B.

[0036] Furthermore, shuttle 4C transports wafer W from processing block 2A to interface block D4. The placement of the transfer modules TRS11C and 12C for shuttle 4C is the same as that of the transfer modules TRS11D and 12D for shuttle 4B.

[0037] Furthermore, the coating and developing apparatus 1 is provided with at least one control unit 10. The control unit 10 processes computer-executable instructions that cause the coating and developing apparatus 1 to perform the various processes described herein. The control unit 10 may be configured to control each element of the coating and developing apparatus 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 10 may be included in the coating and developing apparatus 1. The control unit 10 may include a processing unit, a storage unit, and a communication interface. The control unit 10 is implemented, for example, by a computer. The processing unit may be configured to read a program from the storage unit that provides logic or routines that enable various control operations, and to perform various control operations by executing the read program. This program may be stored in the storage unit in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit and read from the storage unit and executed by the processing unit. The medium may be various storage media H that are readable by a computer, or it may be a communication line connected to a communication interface. The storage media H may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit), or it may be one or more circuits. The storage unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating and developing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0038] The aforementioned resist film formation module 21 and developing module are supplied with a predetermined processing solution onto the wafer W, for example, by a spin coating method. In the spin coating method, for example, the processing solution is discharged onto the wafer W from a discharge nozzle, and the wafer W is held and rotated to diffuse the processing solution onto the surface of the wafer W. In other words, the resist film formation module 21 and developing module are rotary processing devices that hold and rotate a substrate to perform processing.

[0039] As shown in Figure 4, the resist film formation module 21 includes a spin chuck 201 for holding and rotating the wafer W, and a discharge nozzle (not shown) for discharging a processing liquid such as a resist solution onto the wafer W. The resist film formation module 21 also includes a cup 202 that surrounds the wafer W held by the spin chuck 201 and collects the processing liquid scattered from the wafer W. The developing module has a similar configuration to the resist film forming module, except that the processing solution discharged from the discharge nozzle is different.

[0040] Furthermore, as shown in Figure 5, the aforementioned heating module 24 includes, for example, a heating plate 401 for heating the wafer W, a plate 402 for transferring the wafer W between the heating plate 401 and the main transport mechanisms 3A to 3D and for cooling the wafer W, a rectifier plate 403 provided above the heating plate 401, and exhaust sections 404 and 405 for exhausting air from the transport area 22 and the heating module 24.

[0041] As shown in Figures 1, 3, and 6, the main transport mechanism 3A includes an upper and lower guide 301, a lateral guide 302, and a transport arm 303.

[0042] The upper and lower guides 301 extend along the vertical direction. For example, in a plan view, the upper and lower guides 301 are positioned adjacent to the transport area 22 in the depth direction (X direction in the figure) and between the processing module stacks 23. Furthermore, the upper and lower guides 301 are positioned so as not to interfere with the shuttle 4A and the wafer W being transported by the shuttle 4A.

[0043] The lateral guide 302 extends along the width direction (Y direction in the figure) and moves along the upper and lower guides 301. For example, the lateral guide 302 is provided at the far end (positive X direction in the figure) of the transport area 22.

[0044] The transport arm 303 supports and moves the wafer W. Specifically, the transport arm 303 holds the wafer W and moves it in the horizontal direction (X and Y directions in the figure) and around the vertical axis (θ direction). The transport arm 303 includes a movable body 311 that moves along a lateral guide 302 and a base 312 that rotates relative to the movable body 311. The transport arm 303 also has a fork 313. The fork 313 is an example of a substrate support part that is movably configured to support a substrate and moves back and forth relative to the base 312. Multiple forks 313 may be provided on a single transport arm 303.

[0045] The main transport mechanisms 3B, 3C, and 3D are configured in the same way as the main transport mechanism 3A.

[0046] <Wafer Processing> Next, an example of wafer processing and transport path using the coating and developing apparatus 1 will be described.

[0047] For example, first, a wafer W is brought into the carrier block D1 of the coating and developing apparatus 1 and placed on the mounting plate 12, then removed from the carrier C by the transport mechanism 14 and transported to the transfer module of the transfer tower T1.

[0048] Next, the wafer W is transported by the transport mechanism 16 to the hydrophobic treatment module 15, where it undergoes hydrophobic treatment. After that, the wafer W is returned to the transfer tower T1 by the transport mechanism 16.

[0049] Next, the wafer W is transported to the resist film formation module 21 by the main transport mechanism 3A or the main transport mechanism 3B, where a resist film is formed.

[0050] Specifically, first, the operation of the transport arm 303 of the main transport mechanism 3A or the main transport mechanism 3B is controlled by the control unit 10 to transport the wafer W to the resist film formation module 21.

[0051] More specifically, the fork 313 supporting the wafer W is moved from its base end standby position to a transfer position on the spin chuck 201 of the resist film formation module 21. This transfer position is pre-adjusted by a method described later. For the sake of simplicity, in the following explanation, the position of the wafer W on the fork 313, i.e., the positional relationship between the fork 313 and the wafer W supported by the fork 313, will be assumed to be the same each time.

[0052] After the fork 313 moves to a pre-adjusted transfer position, the lifting pins (not shown) in the resist film formation module 21 are raised, and the wafer W is transferred to the lifting pins. Next, the fork 313 is returned to the standby position, and the lifting pins are lowered, transferring the wafer W to the spin chuck 201 of the resist film formation module 21, where it is held. Then, resist liquid is dispensed from the discharge nozzle onto the wafer W, which is rotated by the spin chuck 201, and a resist film is formed on the wafer W.

[0053] After the resist film is formed, EBR (Edge Bead Removal) processing is performed using the same resist film formation module 21.

[0054] Specifically, a removal liquid such as a solvent is discharged from the discharge nozzle onto the wafer W, which is rotated by the spin chuck 201, and the resist film on the peripheral edge of the wafer W is removed in a circular pattern centered on the wafer W.

[0055] Subsequently, the wafer W is transported by the main transport mechanism 3A or the main transport mechanism 3B to the heating module 24 in the first stacking block, where it undergoes a pre-baking process. Next, the wafer W is transported by the main transport mechanism 3A or the main transport mechanism 3B to the transfer module of the transfer tower T2, and then transported by the main transport mechanism 3C or the main transport mechanism 3D to the transfer module of the transfer tower T3 in the interface block D4. Alternatively, the wafer W after the resist film formation may be transported from the processing block 2A to the transfer tower T3 via the main transport mechanism 3A, the shuttle 4C, the transfer modules TRS12C, 11C, and the transport mechanism 32, bypassing the second stacking block D3.

[0056] Next, the wafer W is transported by the transport mechanism 31 to the back surface cleaning module 35, where its back surface is cleaned. After that, the wafer W is returned to the transfer tower T3 by the transport mechanism 31, and then transported to the exposure apparatus E by the transport mechanism 33, where it undergoes exposure processing. After exposure, the wafer W is returned to the transfer tower T3 by the transport mechanism 33, and then transported by the transport mechanism 32 to the post-exposure cleaning module 36, where it is cleaned.

[0057] After cleaning by the post-exposure cleaning module 36, the wafer W is first returned to the transfer tower T3 by the transport mechanism 32. Then, by the main transport mechanism 3C or the main transport mechanism 3D, it is transported within the second stacking block D3 in the order of heating module → developing module → inspection module, and undergoes PEB (Post Exposure Cleaning). After the baking process, a resist pattern is formed, and then it is determined whether or not there are any abnormalities. Next, the wafer W is returned to the transfer tower T2 by the main transfer mechanism 3C or the main transfer mechanism 3D, and then returned to the transfer tower T1 by the main transfer mechanism 3A or the main transfer mechanism 3B. Alternatively, the wafer W processed by the inspection module may be returned to the transfer tower T1 via the main transfer mechanism 3C, shuttle 4A, transfer modules TRS11A, 12A and transfer mechanism 16, bypassing the first stacking processing block D2 from the processing block 2D.

[0058] Then, the wafer W is returned to the carrier C from the transfer tower T1 by the transfer mechanism 14. This completes the wafer processing series.

[0059] (First Embodiment) <Control Unit 10> Figure 7 is a functional block diagram of the control unit 10 according to the first embodiment, and is a functional block diagram relating to the transport of the wafer W to the resist film forming module 21, which is a rotary processing device.

[0060] As shown in Figure 7, the control unit 10 according to this embodiment includes a temperature acquisition unit 510, a position acquisition unit 511, a transfer position adjustment unit 512, and an operation control unit 513, which are realized when the aforementioned processing unit reads and executes a program stored in the memory unit. Of these, the position acquisition unit 511 and the transfer position adjustment unit 512 are for adjusting the aforementioned transfer position. This transfer position adjustment is performed for each resist film forming module 21 and each transport arm 303. However, in the following description, only the adjustment of the transfer position for one resist film forming module 21 by the transport arm 303 of the main transport mechanism 3A will be explained.

[0061] The temperature acquisition unit 510 acquires the maximum and minimum temperatures that can be set as processing temperatures for the heating module 24. Specifically, the temperature acquisition unit 510 acquires the maximum and minimum temperatures that can be set for the heating plate 401 of the heating module 24. This acquisition is performed, for example, for each heating module 24. In this case, the maximum and minimum temperatures may differ for each heating module 24. Furthermore, the maximum and minimum temperatures are input by an operator via an input unit such as a touch panel or keyboard on the control unit 10 when the coating and developing apparatus 1 is started up, and are stored in the memory unit. For example, the temperature acquisition unit 510 acquires the maximum and minimum temperatures stored in the memory unit. Furthermore, the maximum temperature may be the highest temperature among the possible temperatures, excluding those that are set less frequently. Similarly, the lowest temperature may be the lowest temperature among the possible temperatures, excluding those that are set less frequently.

[0062] Based on the maximum and minimum temperatures acquired by the temperature acquisition unit 510, the position acquisition unit 511 acquires the eccentric position of the wafer W held in the resist film formation module 21 with respect to the rotation center of the resist film formation module 21.

[0063] Specifically, the position acquisition unit 511 acquires the eccentric position of the center of the wafer W held by the spin chuck 201 of the resist film formation module 21 with respect to the rotation center of the spin chuck 201, based on the highest and lowest temperatures acquired by the temperature acquisition unit 510. Hereinafter, "eccentric position" means the eccentric position of the center of the wafer W held by the spin chuck 201 of the resist film formation module 21 with respect to the rotation center of the spin chuck 201.

[0064] More specifically, the position acquisition unit 511 first acquires the eccentric position P corresponding to the highest temperature. MAX And the eccentric position P corresponding to the lowest temperature. Min And, obtain.

[0065] Eccentric position P corresponding to the highest temperature MAXThis is the eccentric position obtained when the heating module 24 is actually heated to its maximum temperature. Specifically, it is the eccentric position obtained when each of the heating modules 24 is actually heated to its maximum temperature. More specifically, it is as follows: With the heating plates 401 of each heating module 24 heated to their maximum temperature, the fork 313 of the transport arm 303 is moved to the pre-adjustment transfer position P0 to transfer the wafer W to the resist film forming module 21 to be set. Subsequently, EBR processing is performed on the resist film forming module 21 to be set, and the eccentric position based on the result of that EBR processing corresponds to the eccentric position P corresponding to the maximum temperature. MAX That is the case.

[0066] The eccentric position (specifically its X and Y coordinates) from the EBR processing results is calculated, for example, as follows. Note that the "X coordinate" and "Y coordinate" are the X and Y coordinates of the transport arm 303, respectively.

[0067] First, the removal width of the resist film by EBR treatment is obtained for the following four points. Two points with different X coordinates but the same Y coordinate. Two points whose Y coordinates are different but whose X coordinates are the same. The difference in removal width between the former two points is calculated as the X-coordinate of the eccentric position, and the difference in removal width between the latter two points is calculated as the Y-coordinate of the eccentric position. In this way, the eccentric position can be calculated from the results of the EBR treatment.

[0068] Furthermore, the width of the resist film removed by EBR processing can be calculated from the imaging results, i.e., the image, of the wafer W by the inspection module provided on the processing module stack 23. Furthermore, the width of the resist film removed by the EBR treatment may be measured outside the coating and developing apparatus 1. The calculation of the decentration position from the resist film removal width by the EBR process may be performed by the position acquisition unit 511. Further, the calculation of the decentration position from the resist film removal width by the EBR process may be performed outside the coating and developing apparatus 1, and the calculated decentration position may be input from an operator via an input unit such as a touch panel that the control unit 10 has, and the control unit 10 (the position acquisition unit 511 in this embodiment) may acquire it.

[0069] On the other hand, the decentration position P corresponding to the lowest temperature Min is the decentration position obtained when the heating module 24 is actually set to the lowest temperature. Specifically, it is the decentration position obtained when each of all the heating modules 24 is actually set to the lowest temperature for that heating module 24. More specifically, with the hot plate 401 of each of all the heating modules 24 set to the lowest temperature for that heating module 24, for the resist film forming module 21 to be set, the fork 313 of the transfer arm 303 is moved to the delivery position P0 before adjustment, and the wafer W is delivered. Thereafter, the EBR process performed in the resist film forming module 21 to be set is performed, and the decentration position based on the result of the EBR process is the decentration position P corresponding to the lowest temperature Min is.

[0070] These decentration positions P corresponding to the highest temperature MAX and the decentration position P corresponding to the lowest temperature Min Based on this, the position acquisition unit 511 acquires the decentration position P for adjustment Cal . The decentration position P for adjustment Cal is, for example, the decentration position P corresponding to the highest temperature MAX and the decentration position P corresponding to the lowest temperature Min is the center of. That is, the decentration position P for adjustment Cal is represented by the following formula. P Cal =(P MAX +P Min ) ) / 2

[0071] The delivery position adjustment unit 512 adjusts the decentration position P for adjustment CalBased on this, the handover position is adjusted. Specifically, the handover position adjustment unit 512 adjusts the pre-adjustment handover position P0, which is a temporary handover position predetermined when the coating and developing apparatus 1 is started up, to the adjustment eccentric position P Cal Based on this, the adjusted delivery position Pp is calculated to eliminate eccentricity. The formula for calculating the adjusted delivery position Pp is as follows, for example. Pp = P0 - P Cal

[0072] The motion control unit 513 controls the movement of the transport arm 303. For example, after calculating the adjusted handover position Pp, the motion control unit 513 controls the movement of the transport arm 303 to move the fork 313 from the aforementioned standby position to the adjusted handover position Pp.

[0073] Based on the temperature acquisition unit 510, position acquisition unit 511, transfer position adjustment unit 512, and operation control unit 513 described above, the control unit 10 acquires the eccentric position based on the maximum and minimum temperatures that can be set as processing temperatures in the heating module 24, and adjusts the position of the transport arm 303 when transferring the wafer W to the resist film forming module 21 based on the eccentric position. Specifically, the control unit 10 acquires the eccentric position P corresponding to the maximum temperature. MAX And the eccentric position P corresponding to the lowest temperature. Min Based on this, the eccentric position P for adjustment Cal Obtain the eccentric position P for the adjustment. Cal Based on this, the position of the transport arm 303 is adjusted when transferring the wafer W to the resist film formation module 21.

[0074] <Flowchart for adjusting the handover location> Figure 8 is a flowchart illustrating an example of the adjustment flow for the delivery position according to the first embodiment. The delivery position is adjusted, for example, when the coating and developing apparatus 1 is started up.

[0075] As shown in Figure 8, first, the temperature acquisition unit 510 acquires the maximum and minimum temperatures that can be set as processing temperatures in the heating module 24 (step S1). Specifically, first, the temperature acquisition unit 510 acquires the above-mentioned maximum and minimum temperatures, which were previously input by an operator via the input unit of the control unit 10 and stored in the memory unit, for each heating module 24.

[0076] Next, the position acquisition unit 511 acquires the eccentric position based on the maximum and minimum temperatures acquired in step S1 (step S2). The eccentric position obtained here is the eccentric position when the wafer W is transferred from the transport arm 303 to the resist film formation module 21 at the transfer position P0 before adjustment.

[0077] Step S2 includes the following steps S2a to S2c.

[0078] In step S2a, the position acquisition unit 511 acquires the eccentric position P corresponding to the highest temperature. MAX To obtain

[0079] Specifically, first, the control unit 10 raises the heating plates 401 of all heating modules 24 to the maximum temperature for each heating module 24. Subsequently, the control unit 10 moves the fork 313 of the transport arm 303 supporting the wafer W to the resist film formation module 21 to be configured, to the pre-adjustment transfer position P0, and transfers the wafer W to it. Next, the control unit 10 causes the resist film formation module 21 to be configured to perform the resist film formation process and the EBR process.

[0080] Next, the position acquisition unit 511 acquires the eccentric position of the wafer W after EBR processing. Specifically, the control unit 10 transports the wafer W after EBR processing to an inspection module provided on one of the processing module stacks 23, and has the inspection module image the wafer W. From the image of the wafer W after EBR processing obtained in this way, the position acquisition unit 511 obtains the removal width of the wafer W due to EBR processing when the hot plates 401 of all heating modules 24 are set to their maximum temperature. Then, the position acquisition unit 511 calculates the eccentric position during EBR processing based on the acquired removal width. Alternatively, the wafer W after EBR processing may be moved by an operator to a measuring device outside the coating and developing apparatus 1, and the removal width of the wafer W due to the EBR processing may be obtained by the measuring device when all the heating plates 401 of the heating modules 24 are at their maximum temperature. The removal width input from the operator via the input unit of the control unit 10 is then obtained, and the position acquisition unit 511 calculates the eccentric position during EBR processing based on the obtained removal width. Alternatively, the calculation of the eccentric position during EBR processing based on the removal width of the wafer W may be performed outside the coating and developing apparatus 1, and this calculation result may be input by the operator via the input unit of the control unit 10 and obtained by the position acquisition unit 511.

[0081] The eccentric position obtained in this way during EBR processing corresponds to the eccentric position P corresponding to the highest temperature. MAX This is how it works. Furthermore, with the heating plates 401 of all heating modules 24 at their maximum temperature, the above process is repeated for multiple wafers W, and the position acquisition unit 511 determines a representative position (for example, an average value) of the eccentric position during the EBR process applied to multiple wafers W, and sets the eccentric position P corresponding to the maximum temperature. MAX You may acquire it as such.

[0082] In step S2b, the position acquisition unit 511 acquires the eccentric position P corresponding to the lowest temperature. Min Obtain it. Specifically, first, the control unit 10 sets the heating plates 401 of all heating modules 24 to the lowest temperature for each heating module 24. Subsequently, the control unit 10 moves the fork 313 of the transport arm 303 supporting the wafer W to the resist film formation module 21 to be configured, to the pre-adjustment transfer position P0, and transfers the wafer W to it. Next, the control unit 10 causes the resist film formation module 21 to be configured to perform the resist film formation process and the EBR process.

[0083] Next, the position acquisition unit 511 acquires the eccentric position of the wafer W after EBR processing. Specifically, the control unit 10 transports the wafer W after EBR processing to an inspection module provided on one of the processing module stacks 23, and has the inspection module image the wafer W. From the image of the wafer W after EBR processing obtained in this way, the position acquisition unit 511 obtains the removal width of the wafer W due to EBR processing when the hot plates 401 of all heating modules 24 are set to the lowest temperature. Then, the position acquisition unit 511 calculates the eccentric position during EBR processing based on the acquired removal width. Alternatively, similar to step S2a, the acquisition of the wafer W removal width by EBR processing when the hot plates 401 of all heating modules 24 are set to the lowest temperature, and the calculation of the eccentric position during EBR processing may be performed outside the coating and developing apparatus 1 and input by an operator via the input section of the control unit 10.

[0084] The eccentric position obtained in this way during EBR processing corresponds to the eccentric position P at the lowest temperature. Min This is how it works. Furthermore, with the heating plates 401 of all heating modules 24 set to the lowest temperature, the above process is repeated for multiple wafers W, and the position acquisition unit 511 determines a representative position (for example, an average value) of the eccentric position during the EBR process applied to multiple wafers W, and sets the eccentric position P corresponding to the lowest temperature. Min You may acquire it as such.

[0085] Note that step S2b may be performed before step S2a.

[0086] In step S2c, the position acquisition unit 511 acquires the eccentric position P corresponding to the highest temperature acquired in steps S2a and S2b. MAX and the eccentric position P corresponding to the lowest temperature Min Based on this, the eccentric position P for adjustment Cal Specifically, the position acquisition unit 511 adjusts the eccentric position P according to the following formula. Cal Obtain it. P Cal =(P MAX +P Min ) / 2

[0087] After step S2, the transfer position adjustment unit 512 adjusts to the eccentric position P. Cal Based on this, the handover position is adjusted (step S3). Specifically, the handover position adjustment unit 512 adjusts the handover position P0 before adjustment and the eccentric position P for adjustment. Cal Therefore, the adjusted handover position Pp is calculated according to the following formula. Pp = P0 - P Cal

[0088] This completes the series of steps for adjusting the handover location. During actual processing after adjustment, i.e., during mass production, the adjusted delivery position is used as the delivery position.

[0089] <Main effects of this embodiment> If the transfer position is adjusted in a configuration different from this embodiment (hereinafter referred to as the comparative configuration), the wafer W on the fork 313, which has been moved to the adjusted transfer position, may become significantly eccentric with respect to the spin chuck during mass production after the adjustment. The form of comparison is, for example, the eccentric position P corresponding to the lowest temperature that can be set as the processing temperature in the heating module 24. Min This configuration uses an eccentric position for adjustment, and adjusts the delivery position based on this eccentric position. In this configuration, when mass production occurs after the delivery position adjustment, if the temperature of all heating modules 24 (specifically the heating plates 401) is set to the maximum possible temperature, the wafer W on the fork 313 of the main transport mechanism 3A, which has been moved to the adjusted delivery position, becomes significantly eccentric with respect to the spin chuck. The reason for this is as follows. For example, the length of the upper and lower guides 301 of the main transport mechanism 3A changes due to the heat from the heating module 24 (specifically, the heating plate 401). As a result, the upper and lower guides 301 deform by bending, as shown by the dashed line in Figure 6, and consequently the position of the fork 313 shifts. Therefore, the eccentric position P corresponding to the highest temperature is affected. MAX and the eccentric position P corresponding to the lowest temperature Min It is far from that point. Therefore, the eccentric position P corresponding to the lowest temperature. MinIn a configuration where the transfer position is adjusted using an eccentric position for adjustment, when mass production occurs after the transfer position adjustment, if the temperature of all heating modules 24 (specifically the heating plates 401) reaches the maximum temperature, the wafer W on the fork 313 of the main transport mechanism 3A, which has been moved to the adjusted transfer position, becomes significantly eccentric with respect to the spin chuck.

[0090] In contrast, in this embodiment, the eccentric position P corresponding to the highest temperature is MAX and the eccentric position P corresponding to the lowest temperature Min Based on this, the eccentric position P for adjustment Cal This is obtained, and the eccentric position P for adjustment is obtained. Cal Based on this, the handover position is adjusted. Adjustment eccentric position P Cal This corresponds to the eccentric position P of the highest temperature. MAX Also, the eccentric position P corresponding to the lowest temperature. Min It is also relatively close to this. Therefore, according to this embodiment, even if the temperature of all heating modules 24 (specifically the heating plates 401) is set to the maximum or minimum temperature during mass production after the adjustment of the transfer position, the degree of eccentricity of the wafer W on the fork 313 of the main transport mechanism 3A, which has been moved to the adjusted transfer position, relative to the spin chuck 201 can be kept within a relatively narrow range. In other words, according to this embodiment, the wafer W can be transported to the target position with high precision relative to the spin chuck 201, regardless of the temperature of the heating modules 24.

[0091] (Second Embodiment) <Control Unit 10> Figure 9 is a functional block diagram of the control unit 10 according to the second embodiment, and is a functional block diagram relating to the transport of the wafer W to the resist film formation module 21.

[0092] As shown in Figure 9, the control unit 10 according to this embodiment includes a temperature acquisition unit 510, an intermediate temperature acquisition unit 610, a position acquisition unit 611, a handover position adjustment unit 612, and an operation control unit 513, which are realized when the aforementioned processing unit reads and executes a program stored in the memory unit. Of these, the intermediate temperature acquisition unit 610, the position acquisition unit 611, and the handover position adjustment unit 612 are for adjusting the aforementioned handover position.

[0093] The temperature acquisition unit 510 acquires the maximum and minimum temperatures that can be set as processing temperatures in the heating module 24, similar to the first embodiment.

[0094] The intermediate temperature acquisition unit 610 acquires the intermediate temperature between the highest and lowest temperatures acquired by the temperature acquisition unit 510. Specifically, the intermediate temperature acquisition unit 610 calculates the average of the above-mentioned highest and lowest temperatures and acquires it as the intermediate temperature.

[0095] The position acquisition unit 611 determines the eccentric position P corresponding to the intermediate temperature. Mid Obtain it.

[0096] Eccentric position P corresponding to intermediate temperature Mid This is the eccentric position obtained when the heating module 24 is actually brought to an intermediate temperature. Specifically, it is the eccentric position obtained when each of the heating modules 24 is actually brought to an intermediate temperature for that heating module 24. More specifically, it is as follows: With the heating plates 401 of each heating module 24 brought to an intermediate temperature for that heating module 24, the fork 313 of the transport arm 303 is moved to the pre-adjustment transfer position P0 to transfer the wafer W to the resist film forming module 21 to be set. After that, EBR processing is performed on the resist film forming module 21 to be set, and the eccentric position based on the result of that EBR processing is the eccentric position P corresponding to the intermediate temperature. Mid That is the case.

[0097] The transfer position adjustment unit 612 is positioned at an eccentric position P corresponding to the intermediate temperature. MidBased on this, the handover position is adjusted. Specifically, the handover position adjustment unit 512 adjusts the handover position P0 before adjustment to an eccentric position P corresponding to the intermediate temperature. Mid Based on this, the adjusted delivery position Pp is calculated to eliminate eccentricity. The formula for calculating the adjusted delivery position Pp is as follows, for example. Pp = P0 - P Mid

[0098] The motion control unit 513 controls the movement of the transport arm 303, similar to that in the first embodiment.

[0099] Based on the temperature acquisition unit 510, intermediate temperature acquisition unit 610, position acquisition unit 611, transfer position adjustment unit 612, and operation control unit 513 described above, the control unit 10 acquires an eccentric position based on the maximum and minimum temperatures that can be set as processing temperatures in the heating module 24, and adjusts the position of the transport arm 303 when transferring the wafer W to the resist film forming module 21 based on the eccentric position. Specifically, the control unit 10 acquires an intermediate temperature between the maximum and minimum temperatures and the eccentric position P corresponding to the intermediate temperature. Mid Obtain the eccentric position P corresponding to the intermediate temperature. Mid Based on this, the position of the transport arm 303 is adjusted when transferring the wafer W to the resist film formation module 21.

[0100] <Flowchart for adjusting the handover location> Figure 10 is a flowchart illustrating an example of the adjustment flow for the handover position according to the second embodiment.

[0101] As shown in Figure 10, in step S1, the maximum and minimum temperatures that can be set as processing temperatures in the heating module 24 are acquired by the temperature acquisition unit 510, and then the intermediate temperature acquisition unit 610 acquires an intermediate temperature between the above-mentioned maximum and minimum temperatures (step S11). Specifically, the intermediate temperature acquisition unit 610 calculates the average of the highest and lowest temperatures acquired in step S1 and acquires it as the intermediate temperature.

[0102] Next, the position acquisition unit 611 determines the eccentric position P corresponding to the intermediate temperature. Mid Obtain (step S12).

[0103] Specifically, first, the control unit 10 brings the heating plates 401 of all heating modules 24 to an intermediate temperature for each heating module 24. Subsequently, the control unit 10 moves the fork 313 of the transport arm 303 supporting the wafer W to the resist film formation module 21 to be configured, to the pre-adjustment transfer position P0, and transfers the wafer W to it. Next, the control unit 10 causes the resist film formation module 21 to be configured to perform the resist film formation process and the EBR process.

[0104] Next, the position acquisition unit 611 acquires the eccentric position of the wafer W after EBR processing. Specifically, the control unit 10 transports the wafer W after EBR processing to an inspection module provided on one of the processing module stacks 23, and the inspection module images the wafer W. From the image of the wafer W after EBR processing obtained in this way, the position acquisition unit 611 obtains the removal width of the wafer W due to EBR processing when the hot plates 401 of all heating modules 24 are set to an intermediate temperature. Then, the position acquisition unit 511 calculates the eccentric position during EBR processing based on the acquired removal width. Alternatively, as in step S2a described above, the acquisition of the wafer removal width by EBR processing when the hot plates 401 of all heating modules 24 are set to an intermediate temperature, and the calculation of the eccentric position during EBR processing may be performed outside the coating and developing apparatus 1 and input by an operator via the input section of the control unit 10.

[0105] The eccentric position obtained in this way during EBR processing corresponds to the eccentric position P at the intermediate temperature. Mid This is how it works. Furthermore, with the heating plates 401 of all heating modules 24 set to an intermediate temperature, the above process is repeated for multiple wafers W, and the position acquisition unit 611 acquires a representative position (for example, an average value) of the eccentric position during the EBR process applied to multiple wafers W, which corresponds to the eccentric position P at the intermediate temperature. Mid You may acquire it as such.

[0106] Subsequently, the transfer position adjustment unit 612 adjusts to the eccentric position P corresponding to the intermediate temperature. Mid Based on this, the handover position is adjusted (step S13). Specifically, the handover position adjustment unit 612 adjusts the handover position P0 before adjustment and the eccentric position P corresponding to the intermediate temperature. Mid Therefore, the adjusted handover position Pp is calculated according to the following formula. Pp = P0 - P MIN

[0107] This completes the series of steps for adjusting the handover location. During actual processing after adjustment, i.e., during mass production, the adjusted delivery position is used as the delivery position.

[0108] <Main effects of this embodiment> The comparison in the aforementioned example is the eccentric position P corresponding to the lowest possible temperature. Min Adjustment eccentric position P Cal This configuration adjusts the transfer position based on the eccentric position used for adjustment, that is, it sets the temperature of the heating module 24 (specifically, the heating plate 401) to the lowest possible temperature when adjusting the transfer position. In this comparative configuration, the temperature of the heating module 24 (specifically, the heating plate 401) may differ significantly between the time of adjusting the transfer position and the time of mass production after the transfer position adjustment. Since a significant difference in the temperature of the heating module 24 (specifically, the heating plate 401) leads to a significant difference in the deformation of the upper and lower guides 301 of the main transport mechanism 3A, in the comparative configuration, the wafer W on the fork 313, which has been moved to the adjusted transfer position, may become significantly eccentric with respect to the spin chuck during mass production after the transfer position adjustment.

[0109] In contrast, in this embodiment, the temperature of the heating module 24 (specifically, the heating plate 401) during the adjustment of the transfer position is set to an intermediate temperature between the maximum and minimum temperatures that can be set. Therefore, the temperature difference of the heating module 24 (specifically, the heating plate 401) between the time of adjustment of the transfer position and mass production after the adjustment of the transfer position can be suppressed. Accordingly, according to this embodiment, even if the temperature of all heating modules 24 (specifically, the heating plates 401) is set to the maximum or minimum temperature during mass production after the adjustment of the transfer position, the degree of eccentricity of the wafer W on the fork 313 of the main transport mechanism 3A with respect to the spin chuck 201 can be kept within a relatively narrow range. In other words, even with this embodiment, the wafer W can be transported to the target position with high precision relative to the spin chuck 201, regardless of the temperature of the heating module 24.

[0110] <Modified example of a coating and developing apparatus> Figure 11 is a plan view showing a schematic configuration of a modified coating and developing apparatus equipped with a substrate transport device according to this embodiment. Figures 12 and 13 show schematic diagrams of the internal configuration of the front and rear sides of the coating and developing apparatus, respectively. Figure 14 is a longitudinal cross-sectional side view showing a schematic diagram of the internal configuration of the coating and developing apparatus.

[0111] As shown in Figures 11 to 13, the coating and developing apparatus 1A includes a carrier station 702 where carriers C are brought in and out of the apparatus, for example, to and from the outside, and a processing station 703 equipped with a plurality of processing modules for performing predetermined processes such as resist film formation. The coating and developing apparatus 1 has an interface station 705 adjacent to the processing station 703 on the positive Y side (right side in Figure 11) for transferring wafers W to and from the exposure apparatus 7044. The carrier station 702, processing station 703, and interface station 705 are integrally connected.

[0112] The carrier station 702 is divided into, for example, a carrier loading / unloading section 710 and a wafer transport section 711. For example, the carrier loading / unloading section 710 is located at the negative Y-side (left side in Figure 11) end of the coating / developing apparatus 1A. The carrier loading / unloading section 710 is provided with a carrier mounting table 712. Multiple mounting plates 713, for example, four, are provided on the carrier mounting table 712. The mounting plates 713 are arranged in a row in the horizontal X-direction (up and down direction in Figure 11). Carriers C can be placed on these mounting plates 713 when loading or unloading carriers C to and from the outside of the coating / developing apparatus 1A.

[0113] The wafer transport unit 711 is provided with a transport device 721 that is movable along a transport path 720 extending in the X direction (up and down direction in Figure 11). The transport device 721 is also movable in the up and down direction and around the vertical axis (θ direction), and can transport wafers W between the carrier C on each mounting plate 713 and the transfer module of the third block G3 of the processing station 703, which will be described later.

[0114] The processing station 703 is equipped with multiple modules, such as the first to fourth blocks G1, G2, G3, and G4. For example, the first block G1 is located on the front side of the processing station 703 (negative X direction in Figure 11), and the second block G2 is located on the rear side of the processing station 703 (positive X direction in Figure 1). A third block G3 is located on the carrier station 702 side of the processing station 703 (negative Y direction in Figure 11), and a fourth block G4 is located on the interface station 705 side of the processing station 703 (positive Y direction in Figure 1).

[0115] In the first block G1, as shown in Figure 12, a plurality of liquid processing modules are arranged from bottom to top in the following order: a developing module 730, a lower anti-reflective film forming module 731 which forms an anti-reflective film (hereinafter referred to as the "lower anti-reflective film") on the lower layer of the resist film on the wafer W, a resist film forming module 21, and an upper anti-reflective film forming module 732 which forms an anti-reflective film (hereinafter referred to as the "upper anti-reflective film") on the upper layer of the resist film on the wafer W.

[0116] For example, the developing module 730, the lower anti-reflective coating forming module 731, the resist coating forming module 21, and the upper anti-reflective coating forming module 732 are each arranged in a horizontal line of four. The number and arrangement of these developing modules 730, lower anti-reflective coating forming module 731, resist coating forming module 21, and upper anti-reflective coating forming module 732 can be arbitrarily selected.

[0117] For example, in the second block G2, as shown in Figure 13, heating modules 24 and adhesion modules 740 for improving the adhesion between the resist liquid and the wafer W are arranged in a vertical direction, etc. The number and arrangement of these heating modules 24 and adhesion modules 740 can also be arbitrarily selected.

[0118] For example, the third block G3 has multiple transfer modules 751 arranged from bottom to top. Also, the fourth block G4 has multiple transfer modules 761 arranged from bottom to top.

[0119] As shown in Figure 11, a wafer transport area R is formed in the region enclosed by the first block G1 to the fourth block G4.

[0120] Furthermore, a wafer transport module 800 is provided next to the third block G3 on the positive X-direction side. The wafer transport module 800 has a transport arm 800a that is movable, for example, in the X-direction, θ-direction, and vertical direction. The wafer transport module 800 can move up and down while supporting the wafer W with the transport arm 800a, and transport the wafer W to each transfer module in the third block G3.

[0121] Interface station 5 is provided with a wafer transport module 810 and a transfer module 811. The wafer transport module 810 has a transport arm 810a that is movable, for example, in the Y direction, θ direction and vertical direction. The wafer transport module 810 can transport the wafer W between each transfer module, transfer module 811 and exposure apparatus 704 in the fourth block G4 by supporting the wafer W with the transport arm 810a.

[0122] Further explanation will be given regarding the wafer transport region R. As shown in Figure 14, the wafer transport region R is composed of four transport regions R1 to R4 stacked in order from bottom to top, and each of the transport regions R1 to R4 is formed to extend in the direction from the third block G3 to the fourth block G4 (the Y direction in the figure). A liquid processing module such as a resist film formation module 21 is placed on one side of the width direction (the X direction in the figure) of the transport regions R1 to R4, and a heating module 24, for example, is placed on the other side.

[0123] Furthermore, a transport arm 900a of the transport mechanism 900 as a substrate transport device according to this disclosure is located in each of the transport regions R1 to R4. The transport mechanism 900 transports the wafer W to a module (such as a resist film forming module 21) adjacent to the transport region (such as a resist film forming module 21) in the transport region R1 to R4 where the transport mechanism 900 is located.

[0124] Furthermore, the processing station 703 of the coating and developing apparatus 1A includes a housing 770, as shown in Figure 11. The aforementioned modules are housed inside the housing 770. The inside of the housing 770 is also partitioned into separate transport areas. The housing 770 includes a housing 771 that houses the guide 901 and the like, as shown in Figure 15.

[0125] Furthermore, as shown in Figures 11 and 15, the transport mechanism 900 includes a guide 901 that extends along the length direction (Y direction in Figure 15, etc.) of the transport region R1 to R4, and a transport arm 900a that supports the wafer W and moves it in the horizontal direction (X and Y directions in the figures), the vertical direction, and the direction around the vertical axis (θ direction).

[0126] The transport arm 900a includes a frame 902 that moves along a guide 901, a lifting body 903 that moves up and down along the frame 902, and a base 904 that rotates relative to the lifting body 903. The transport arm 900a also has a fork 905. The fork 905 is movably configured to support the wafer W and moves forward and backward relative to the base 904.

[0127] Furthermore, the transport mechanism 900 includes a drive mechanism (not shown) that moves the fork 905 linearly in the forward / backward direction (X direction in the figure) relative to the base 904, and a drive mechanism (not shown) that rotates the base 904 relative to the lifting body 903, i.e., moves it in the θ direction. The transport mechanism 900 also includes a drive mechanism (not shown) that moves the lifting body 903 up and down along the frame 902, and a drive mechanism 950 that moves the frame 902 along the guide 901.

[0128] The drive mechanism 950 includes the aforementioned guide 901 and further includes an actuator (not shown), such as a motor, as a drive source that generates a driving force to move the frame 902 along the guide 901. The drive mechanism 850 is housed in the aforementioned housing 771. A housing 772, which houses the heating plate 401 of the heating module 24, is stacked on top of the housing 771.

[0129] In the coating and developing apparatus 1 having the transport mechanism 900 described above, when the processing temperature setting of the heating module 24 is changed, the housing 771, which houses the guides 901 and other components of the transport mechanism 900, may shrink due to the influence of the hot plate 401, causing the guides 901 to deform. As a result, the wafer W on the fork 905, which has been moved to the transfer position, may become eccentric with respect to the spin chuck 201 of the resist film formation module 21.

[0130] The method for adjusting the delivery position according to this disclosure can also be applied to the delivery position of the fork 905 to the resist film forming module 21.

[0131] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0132] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that are obvious to those skilled in the art from the description herein, in addition to or instead of the effects described herein.

[0133] Furthermore, the following configuration examples also fall within the technical scope of this disclosure. (1) A substrate transport device for transporting substrates, This device is located within a common housing with the heat treatment unit that heat-treats the aforementioned substrate, and transports the substrate to the rotational unit that holds and rotates the substrate for processing. A transport arm that supports and moves the aforementioned substrate, The system includes a control unit that controls the movement of the transport arm, A substrate transport device comprising: a control unit which, based on the maximum and minimum temperatures that can be set as the processing temperature in the heat processing unit, obtains the eccentric position of the substrate held in the rotation processing unit with respect to the rotation center of the rotation processing unit, and adjusts the position of the transport arm when transferring the substrate to the rotation processing unit based on the eccentric position. (2) The substrate transport apparatus according to (1), wherein the control unit acquires an eccentric position for adjustment based on the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature, and adjusts the position of the transport arm at the time of transfer based on the eccentric position for adjustment. (3) The substrate transport apparatus according to (2), wherein the eccentric position for adjustment is the center of the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature. (4) The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the maximum temperature. The substrate transport apparatus according to (2) or (3), wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the minimum temperature. (5) Multiple heat treatment units are provided within the common housing, The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the maximum temperature that can be set as the processing temperature in the heat treatment unit. The substrate transport apparatus according to (4), wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the minimum temperature that can be set as the processing temperature in the heat treatment unit. (6) The substrate transport apparatus according to (1), wherein the control unit acquires an intermediate temperature between the highest temperature and the lowest temperature, acquires the eccentric position corresponding to the intermediate temperature, and adjusts the position of the transport arm at the time of transfer based on the eccentric position corresponding to the intermediate temperature. (7) The substrate transport apparatus according to (6), wherein the intermediate temperature is the average value of the maximum temperature and the minimum temperature. (8) The substrate transport apparatus according to (6) or (7), wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the intermediate temperature. (9) Multiple heat treatment units are provided within the common housing, The substrate transport apparatus according to (8), wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually brought to the intermediate temperature of the heat treatment unit. (10) A substrate transport method for transporting substrates, The process includes transporting the substrate using a transport arm to a rotation processing unit, which is located in a housing shared with a heat processing unit for heat treatment of the substrate, and which holds and rotates the substrate for processing. A substrate transport method comprising the step of adjusting the position of the transport arm when the substrate is transferred to the rotation processing unit, based on the eccentric position of the substrate held in the rotation processing unit with respect to the rotation center of the rotation processing unit, which is obtained based on the maximum and minimum temperatures that can be set as the processing temperature in the heat processing unit. (11) The substrate transport method according to (10), wherein the adjustment step involves obtaining an eccentric position for adjustment based on the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature, and adjusting the position of the transport arm at the time of transfer based on the eccentric position for adjustment. (12) The substrate transport method according to (11), wherein the eccentric position for adjustment is the center of the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature. (13) The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the maximum temperature, The substrate transport method according to (11) or (12), wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the minimum temperature. (14) Multiple heat treatment units are provided within the common housing, The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the maximum temperature that can be set as the processing temperature in the heat treatment unit. The substrate transport method according to (13), wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the minimum temperature that can be set as the processing temperature in the heat treatment unit. (15) The substrate transport method according to (10), wherein the adjustment step involves obtaining an intermediate temperature between the highest temperature and the lowest temperature, obtaining the eccentric position corresponding to the intermediate temperature, and adjusting the position of the transport arm at the time of transfer based on the eccentric position corresponding to the intermediate temperature. (16) The substrate transport method according to (15), wherein the intermediate temperature is the average value of the maximum temperature and the minimum temperature. (17) The substrate transport method according to (15) or (16), wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the intermediate temperature. (18) Multiple heat treatment units are provided within the common housing, The substrate transport method according to (17), wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually brought to the intermediate temperature of the heat treatment unit. (19) A readable computer storage medium storing a program that operates on a computer of a control unit that controls a substrate transport device, so as to cause the substrate transport device to execute a substrate transport method for transporting substrates, The substrate transport method includes a step of transporting the substrate using the transport arm of the substrate transport device to a rotation processing unit, which is located in a housing shared with a heat processing unit for heat treating the substrate, and which holds and rotates the substrate for processing. The transport step includes adjusting the position of the transport arm when transferring the substrate to the rotation processing unit, based on the eccentric position of the substrate held by the rotation processing unit with respect to the rotation center of the rotation processing unit, which is obtained based on the maximum and minimum temperatures that can be set as the processing temperature in the heat processing unit. [Explanation of Symbols]

[0134] 3A, 3B, 3C, 3D main transport mechanism 10 Control Unit 21. Resist film formation module 24 Heating Modules 303 Transport Arm 770 cabinets 900 Conveying mechanism 900a transport arm D1a, D2a, D3a, D4a enclosure H storage medium W wafer

Claims

1. A substrate transport device for transporting substrates, This device is located within a common housing with the heat treatment unit that heat-treats the aforementioned substrate, and transports the substrate to the rotational unit that holds and rotates the substrate for processing. A transport arm that supports and moves the aforementioned substrate, The system includes a control unit that controls the movement of the transport arm, A substrate transport device comprising: a control unit which, based on the maximum and minimum temperatures that can be set as the processing temperature in the heat processing unit, obtains the eccentric position of the substrate held in the rotation processing unit with respect to the rotation center of the rotation processing unit, and adjusts the position of the transport arm when transferring the substrate to the rotation processing unit based on the eccentric position.

2. The substrate transport apparatus according to claim 1, wherein the control unit acquires an eccentric position for adjustment based on the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature, and adjusts the position of the transport arm at the time of transfer based on the eccentric position for adjustment.

3. The substrate transport apparatus according to claim 2, wherein the eccentric position for adjustment is the center between the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature.

4. The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the maximum temperature. The substrate transport apparatus according to claim 2 or 3, wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the minimum temperature.

5. Multiple heat treatment units are provided within the common housing. The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the maximum temperature that can be set as the processing temperature in the heat treatment unit. The substrate transport apparatus according to claim 4, wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the minimum temperature that can be set as the processing temperature in the heat treatment unit.

6. The substrate transport apparatus according to claim 1, wherein the control unit acquires an intermediate temperature between the highest temperature and the lowest temperature, acquires the eccentric position corresponding to the intermediate temperature, and adjusts the position of the transport arm at the time of transfer based on the eccentric position corresponding to the intermediate temperature.

7. The substrate transport apparatus according to claim 6, wherein the intermediate temperature is the average value of the maximum temperature and the minimum temperature.

8. The substrate transport apparatus according to claim 6 or 7, wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the intermediate temperature.

9. Multiple heat treatment units are provided within the common housing. The substrate transport apparatus according to claim 8, wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually brought to the intermediate temperature of the heat treatment unit.

10. A substrate transport method for transporting substrates, The process includes transporting the substrate using a transport arm to a rotation processing unit, which is located in a housing shared with a heat processing unit for heat treatment of the substrate, and which holds and rotates the substrate for processing. A substrate transport method comprising the step of adjusting the position of the transport arm when the substrate is transferred to the rotation processing unit, based on the eccentric position of the substrate held in the rotation processing unit with respect to the rotation center of the rotation processing unit, which is obtained based on the maximum and minimum temperatures that can be set as the processing temperature in the heat processing unit.

11. The substrate transport method according to claim 10, wherein the adjustment step involves obtaining an eccentric position for adjustment based on the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature, and adjusting the position of the transport arm at the time of transfer based on the eccentric position for adjustment.

12. The substrate transport method according to claim 11, wherein the eccentric position for adjustment is the center between the eccentric position corresponding to the highest temperature and the eccentric position corresponding to the lowest temperature.

13. The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the maximum temperature. The substrate transport method according to claim 11 or 12, wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the minimum temperature.

14. Multiple heat treatment units are provided within the common housing. The eccentric position corresponding to the maximum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the maximum temperature that can be set as the processing temperature in the heat treatment unit. The substrate transport method according to claim 13, wherein the eccentric position corresponding to the minimum temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually set to the minimum temperature that can be set as the processing temperature in the heat treatment unit.

15. The substrate transport method according to claim 10, wherein the adjustment step involves obtaining an intermediate temperature between the highest temperature and the lowest temperature, obtaining the eccentric position corresponding to the intermediate temperature, and adjusting the position of the transport arm at the time of transfer based on the eccentric position corresponding to the intermediate temperature.

16. The substrate transport method according to claim 15, wherein the intermediate temperature is the average value of the maximum temperature and the minimum temperature.

17. The substrate transport method according to claim 15 or 16, wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when the heat treatment unit is actually brought to the intermediate temperature.

18. Multiple heat treatment units are provided within the common housing. The substrate transport method according to claim 17, wherein the eccentric position corresponding to the intermediate temperature is the eccentric position of the substrate obtained when each of the heat treatment units is actually brought to the intermediate temperature of the heat treatment unit.

19. A readable computer storage medium containing a program that runs on a computer in a control unit that controls a substrate transport device, so as to cause the substrate transport device to execute a substrate transport method for transporting substrates, The substrate transport method includes a step of transporting the substrate using the transport arm of the substrate transport device to a rotation processing unit, which is located in a housing shared with a heat processing unit for heat treating the substrate, and which holds and rotates the substrate for processing. The transport step includes adjusting the position of the transport arm when transferring the substrate to the rotation processing unit, based on the eccentric position of the substrate held by the rotation processing unit with respect to the rotation center of the rotation processing unit, which is obtained based on the maximum and minimum temperatures that can be set as the processing temperature in the heat processing unit.

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