Semiconductor equipment
The semiconductor device's innovative groove structure separates IGBT and FRD regions, addressing electrostatic protection failures and improving reliability by preventing interference during manufacturing.
JP2026108922APending Publication Date: 2026-07-01HISENSE HOME APPLIANCES GRP CO LTD
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Patent Information
- Application Number
- JP2024213387
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-11-20
- Filing Date
- 2024-12-06
- Publication Date
- 2026-07-01
AI Technical Summary
Technical Problem
Existing semiconductor devices with stripe-shaped grooves face electrostatic protection failures at the groove edges, leading to low stability and reliability.
Method used
The semiconductor device incorporates a unique groove structure with multiple first and second grooves, connection grooves, and dummy gate grooves to separate the insulated gate bipolar transistor (IGBT) and fast recovery diode (FRD) regions, ensuring they do not interfere during manufacturing, thereby maintaining performance and reliability.
Benefits of technology
The groove structure effectively prevents interference between IGBT and FRD regions, ensuring consistent performance and enhancing the overall reliability of the semiconductor device.
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Smart Images
Figure 2026108922000001_ABST
Abstract
This prevents the IGBT region and FRD region from interfering with each other during the manufacturing process, thereby improving the reliability of semiconductor devices. [Solution] The semiconductor device includes a substrate, a drift layer, and two sub-groove sections 1211 in which spacing grooves 121 are spaced apart in a first direction. Each sub-groove section includes a first groove containing a plurality of gate groove groups and a plurality of dummy gate groove sections, a second groove spaced apart between the two sub-grooves in a first direction, two first connecting grooves 140 connected to one end of the dummy gate groove near the second groove, one of which connects one end of the plurality of second grooves and the other connecting the other end of the plurality of second grooves, and a second connecting groove 150 connecting one end of the gate groove in the gate groove group near the second groove.
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