Magnetic sensor, magnetic head, and magnetic recording device

Abstract

To provide a magnetic sensor, a magnetic head, and a magnetic recorder, which improve resolution.SOLUTION: A magnetic sensor 70A comprises a first shield 41 to a sixth shield 46, first and second magnetic layers 11 and 12, and a first member 31. The first magnetic layer 11 is between the third shield 43 and the fourth shield 44. The second magnetic layer 12 is between the first magnetic layer 11 and the second shield 42 and is between the fifth shield 45 and the sixth shield 46. The second magnetic layer 12 is electrically connected to the fifth shield 45 and the sixth shield 46. The first member 31 includes a first region 31a and a second region 31b. The first region 31a is provided between the third shield 43 and the first magnetic layer 11. The second region 31b is provided between the first magnetic layer 11 and the fourth shield 44.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a magnetic sensor, a magnetic head, and a magnetic recording device. [Background technology]

[0002] There are magnetic sensors that use a magnetic layer. Information is recorded on a magnetic recording medium such as an HDD (Hard Disk Drive) using a magnetic head that includes the magnetic sensor. It is desirable to improve the resolution of magnetic sensors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent No. 7,576,948 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention provide a magnetic sensor, a magnetic head, and a magnetic recording device that can improve resolution. [Means for solving the problem]

[0005] According to an embodiment, the magnetic sensor includes a first shield, a second shield, a third shield, a fourth shield, a fifth shield, a sixth shield, a first magnetic layer, a second magnetic layer, a first member, a first terminal, a second terminal, a third terminal, and a fourth terminal. The third shield is provided between the first shield and the second shield. The fourth shield is provided between the first shield and the second shield. A second direction from the third shield to the fourth shield intersects with a first direction from the first shield to the second shield. The fifth shield is provided between the third shield and the second shield. The sixth shield is provided between the fourth shield and the second shield. A direction from the fifth shield to the sixth shield is along the second direction. The first magnetic layer is provided between the first shield and the second shield. The first magnetic layer is between the third shield and the fourth shield in the second direction. The second magnetic layer is provided between the first magnetic layer and the second shield. The second magnetic layer is between the fifth shield and the sixth shield in the second direction. The second magnetic layer is electrically connected to the fifth shield and the sixth shield. The first member includes a first region and a second region. The first region is provided between the third shield and the first magnetic layer. The second region is provided between the first magnetic layer and the fourth shield. The first terminal is electrically connected to the fifth shield. The second terminal is electrically connected to the sixth shield. The third terminal is electrically connected to the first magnetic layer. The fourth terminal is electrically connected to the second magnetic layer. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the magnetic sensor according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view illustrating the magnetic sensor according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view illustrating the magnetic sensor according to the first embodiment. [Figure 4]FIG. 4 is a schematic perspective view illustrating the magnetic head and magnetic recording device according to the second embodiment. [Figure 5] FIG. 5 is a schematic perspective view illustrating a part of the magnetic recording device according to the embodiment. [Figure 6] FIG. 6 is a schematic perspective view illustrating the magnetic recording device according to the embodiment. [Figure 7] 7A and 7B are schematic perspective views illustrating a part of the magnetic recording device according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1 and 2 are schematic cross-sectional views illustrating the magnetic sensor according to the first embodiment. 1 , the magnetic sensor 70A according to the embodiment includes a first shield 41, a second shield 42, a third shield 43, a fourth shield 44, a fifth shield 45, a sixth shield 46, a first magnetic layer 11, a second magnetic layer 12, a first member 31, a first terminal 51, a second terminal 52, a third terminal 53, and a fourth terminal 54. In this example, the magnetic sensor 70A includes a first conductive region 21 and a second conductive region 22.

[0009] The third shield 43 is provided between the first shield 41 and the second shield 42. The fourth shield 44 is provided between the first shield 41 and the second shield 42. A second direction D2 from the third shield 43 to the fourth shield 44 intersects with the first direction D1 from the first shield 41 to the second shield 42.

[0010] The first direction D1 is the X-axis direction. One direction perpendicular to the X-axis direction is the Y-axis direction. The direction perpendicular to the X-axis and Y-axis directions is the Z-axis direction. The second direction D2 is, for example, the Y-axis direction.

[0011] The fifth shield 45 is provided between the third shield 43 and the second shield 42. The sixth shield 46 is provided between the fourth shield 44 and the second shield 42. The direction from the fifth shield 45 to the sixth shield 46 is along the second direction D2.

[0012] The first magnetic layer 11 is provided between the first shield 41 and the second shield 42. The first magnetic layer 11 is located between the third shield 43 and the fourth shield 44 in the second direction D2. The first magnetic layer 11 is, for example, a ferromagnetic layer.

[0013] The second magnetic layer 12 is provided between the first magnetic layer 11 and the second shield 42. The second magnetic layer 12 is located between the fifth shield 45 and the sixth shield 46 in the second direction D2. The second magnetic layer 12 is, for example, a ferromagnetic layer. The second magnetic layer 12 is, for example, electrically connected to the fifth shield 45 and the sixth shield 46.

[0014] The first conductive region 21 is provided between the fifth shield 45 and the second magnetic layer 12. The first conductive region 21 is electrically connected to the fifth shield 45 and the second magnetic layer 12. The first conductive region 21 is nonmagnetic. The first conductive region 21 may be, for example, a continuous layer. The first conductive region 21 may be, for example, a mesh-like region. The first conductive region 21 may include, for example, a plurality of discontinuous island-like regions.

[0015] The second conductive region 22 is provided between the second magnetic layer 12 and the sixth shield 46. The second conductive region 22 is electrically connected to the second magnetic layer 12 and the sixth shield 46. The second conductive region 22 is nonmagnetic. The second conductive region 22 may be, for example, a continuous layer. The second conductive region 22 may be, for example, a mesh-like region. The second conductive region 22 may include, for example, a plurality of discontinuous island-like regions. The first conductive region 21 and the second conductive region 22 are provided as needed, and may be omitted.

[0016] The first member 31 includes a first region 31a and a second region 31b. The first region 31a is provided between the third shield 43 and the first magnetic layer 11. The second region 31b is provided between the first magnetic layer 11 and the fourth shield 44.

[0017] The first terminal 51 is electrically connected to the fifth shield 45. The second terminal 52 is electrically connected to the sixth shield 46. The first terminal 51 is electrically connected to the second magnetic layer 12 via the fifth shield 45 (and the first conductive region 21). The second terminal 52 is electrically connected to the second magnetic layer 12 via the sixth shield 46 (and the second conductive region 22).

[0018] The third terminal 53 is electrically connected to the first magnetic layer 11. For example, the third terminal 53 may be electrically connected to the first magnetic layer 11 via the first shield 41. The fourth terminal 54 is electrically connected to the second magnetic layer 12. For example, the fourth terminal 54 may be electrically connected to the second magnetic layer 12 via the second shield 42.

[0019] Such a magnetic sensor 70A can detect the target magnetic field with high spatial resolution. According to the embodiment, a magnetic sensor capable of improving resolution can be provided.

[0020] For example, a first current i1 can be supplied between the first terminal 51 and the second terminal 52. For example, the magnetic sensor 70A may include a first circuit 75a. The first circuit 75a can supply the first current i1 between the first terminal 51 and the second terminal 52. The first current i1 flows through the second magnetic layer 12. The first current i1 includes a component along the second direction D2.

[0021] The magnetic sensor 70A is capable of detecting a voltage Vx between the third terminal 53 and the fourth terminal 54. For example, the magnetic sensor 70A may include a second circuit 75b. The second circuit 75b is capable of detecting a value corresponding to the voltage Vx between the third terminal 53 and the fourth terminal 54.

[0022] When a first current i1 flows between the first terminal 51 and the second terminal 52, a voltage Vx between the third terminal 53 and the fourth terminal 54 can change depending on the magnetic field to be detected.

[0023] The magnetic field to be detected includes a component along a third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Z-axis direction.

[0024] For example, in the first state, a magnetic field to be detected is applied to both the first magnetic layer 11 and the second magnetic layer 12 in the same direction. In the second state, the direction of the magnetic field to be detected applied to the first magnetic layer 11 is opposite to the direction of the magnetic field to be detected applied to the second magnetic layer 12. In the magnetic sensor 70A, the voltage Vx in the first state is different from the voltage Vx in the second state. By detecting a change in the voltage Vx, the first state and the second state can be distinguished and detected. For example, a change in the direction of the magnetic field to be detected in the region between the first magnetic layer 11 and the second magnetic layer 12 can be detected. For example, a change in the magnetic field to be detected in a minute region can be detected. According to the embodiment, the resolution can be improved.

[0025] In the magnetic sensor 70A, the magnetic field to be detected may be based on the direction of magnetization recorded on a magnetic recording medium, for example, and information recorded on the magnetic recording medium can be detected with high resolution.

[0026] In one example, the concentration of the first element in the first region 31a is higher than the concentration of the first element in the first conductive region 21, and the concentration of the first element in the second region 31b is higher than the concentration of the first element in the second conductive region 22. Alternatively, the first conductive region 21 and the second conductive region 22 do not contain the first element. The first element includes at least one selected from the group consisting of oxygen and nitrogen.

[0027] For example, the first region 31a and the second region 31b include an oxide, a nitride, or an oxynitride. In one example, at least one of the first region 31a and the second region 31b further includes a second element including at least one selected from the group consisting of Si, Al, Ta, Hf, and Mg. The first region 31a and the second region 31b include at least one selected from the group consisting of silicon oxide, silicon nitride, and aluminum oxide. The first region 31a and the second region 31b are, for example, insulating.

[0028] On the other hand, at least one of the first conductive region 21 and the second conductive region 22 contains at least one selected from the group consisting of Cu, Au, Ag, Pt, Al, Pd, Ta, Ru, Hf, W, Mo, Ir, Cr, Tb, and Rh. At least one of the first conductive region 21 and the second conductive region 22 may contain at least one selected from the group consisting of Au, Ta, Pt, Ru, Hf, W, Mo, Ir, Cr, Tb, and Rh. These materials, for example, have a large spin-orbit interaction. Use of a material with a large spin-orbit interaction suppresses unnecessary spin transmission. The conductivity of the first conductive region 21 and the second conductive region 22 is higher than that of the first region 31a and the second region 31b.

[0029] For example, the first current i1 changes the magnetization direction of the second magnetic layer 12. The change in the magnetization direction of the second magnetic layer 12 includes, for example, a rotation component around the X-axis direction. On the other hand, the first current i1 does not substantially flow through the first magnetic layer 11. Therefore, the effect of the change in the direction of the first magnetic layer 11 caused by the first current i1 on the change in voltage Vx is small. It is believed that the difference in voltage Vx occurs due to this effect and the effect of the difference between the first state and the second state regarding the magnetic field to be detected.

[0030] 2, the first magnetic layer 11 has a first magnetization 11M. The second magnetic layer 12 has a second magnetization 12M. For example, the first magnetization 11M and the second magnetization 12M have components in the second direction D2. For example, the direction of the first magnetization 11M is opposite to the direction of the second magnetization 12M. For example, the first magnetic layer 11 may be antiferromagnetically coupled to the second magnetic layer 12.

[0031] For example, when the magnetic field to be detected in the first state is applied to the antiferromagnetically coupled first magnetic layer 11 and second magnetic layer 12, the change in the magnetization direction of these magnetic layers is small. In contrast, when the magnetic field to be detected in the second state is applied to the antiferromagnetically coupled first magnetic layer 11 and second magnetic layer 12, the change in the magnetization direction of these magnetic layers is large. A change in the Z-axis component of the magnetization due to the change in the magnetization direction can be detected as a difference in the change in voltage Vx based on the first current i1.

[0032] As shown in FIG. 2, the third shield 43 has a third magnetization 43M. The fourth shield 44 has a fourth magnetization 44M. The fifth shield 45 has a fifth magnetization 45M. The sixth shield 46 has a sixth magnetization 46M. For example, the orientations of the third magnetization 43M and the fourth magnetization 44M may be the same as the orientation of the first magnetization 11M. For example, the orientations of the fifth magnetization 45M and the sixth magnetization 46M may be the same as the orientation of the second magnetization 12M.

[0033] 1, the magnetic sensor 70A may further include a first intermediate layer 61, a second intermediate layer 62, and a third intermediate layer 63. The first intermediate layer 61 is provided between the first magnetic layer 11 and the second magnetic layer 12 and is nonmagnetic. The second intermediate layer 62 is provided between the third shield 43 and the fifth shield 45 and is nonmagnetic. The third intermediate layer 63 is provided between the fourth shield 44 and the sixth shield 46 and is nonmagnetic.

[0034] In one example, at least one of the first intermediate layer 61, the second intermediate layer 62, and the third intermediate layer 63 contains Ru. In this case, the thickness of at least one of these layers along the first direction D1 is 0.1 nm to 1.0 nm, or 1.4 nm to 2.2 nm, or 2.6 nm to 3.5 nm. This configuration makes it easy to obtain antiferromagnetic coupling.

[0035] In another example, at least one of the first intermediate layer 61, the second intermediate layer 62, and the third intermediate layer 63 contains Ir. In this case, the thickness of at least one of these layers along the first direction D1 is 0.3 nm to 0.8 nm, or 1.1 nm to 1.6 nm. This configuration makes it easy to obtain antiferromagnetic coupling. For example, it is easy to obtain antiferromagnetic coupling while suppressing leakage of the first current i1 to the first magnetic layer 11.

[0036] In an embodiment, at least one of the first intermediate layer 61, the second intermediate layer 62, and the third intermediate layer 63 may be configured to correspond to, for example, the peak (second peak or first peak, etc.) of the RKKY (Ruderman-Kittel-Kasuya-Yosida) bond.

[0037] 1, in the magnetic sensor 70A, the first member 31 may further include a third region 31c and a fourth region 31d. The third region 31c is provided between the first shield 41 and the third shield 43. The fourth region 31d is provided between the first shield 41 and the fourth shield 44.

[0038] For example, the third region 31c and the fourth region 31d are insulating. For example, the first region 31a may be continuous with the third region 31c. The second region 31b may be continuous with the fourth region 31d. The boundary between the first region 31a and the third region 31c may be clear or unclear. The boundary between the second region 31b and the fourth region 31d may be clear or unclear. For example, the material of the third region 31c may be the same as the material of the first region 31a. For example, the material of the fourth region 31d may be the same as the material of the second region 31b.

[0039] 1, the first member 31 may further include a fifth region 31e and a sixth region 31f. The fifth region 31e is provided between the fifth shield 45 and the second shield 42. The sixth region 31f is provided between the sixth shield 46 and the second shield 42. The fifth region 31e and the sixth region 31f are insulating.

[0040] 1, a portion of the first region 31a may be provided between the second intermediate layer 62 and the first intermediate layer 61. A portion of the second region 31b may be provided between the first intermediate layer 61 and the third intermediate layer 63.

[0041] 1, the magnetic sensor 70A may further include a fourth intermediate layer 64 and a fifth intermediate layer 65. The fourth intermediate layer 64 is provided between the first shield 41 and the first magnetic layer 11 and is nonmagnetic. The fifth intermediate layer 65 is provided between the second magnetic layer 12 and the second shield 42 and is nonmagnetic.

[0042] The fourth intermediate layer 64 and the fifth intermediate layer 65 may contain, for example, at least one selected from the group consisting of Ti, Cu, Ru, Ta, Cr, Hf, and Mg, which makes it easier for the first current i1 to pass through the second magnetic layer 12. The fourth intermediate layer 64 and the fifth intermediate layer 65 may contain, for example, at least one nitride or oxide selected from the group consisting of Ti, Cu, Ru, Ta, Cr, Hf, and Mg.

[0043] As shown in FIG. 2, the thickness of the first conductive region 21 along the second direction D2 is defined as the first conductive region thickness t21. The thickness of the second conductive region 22 along the second direction D2 is defined as the second conductive region thickness t22. The first conductive region thickness t21 may be, for example, 1.0 nm or more and 5.0 nm or less. The second conductive region thickness t22 may be, for example, 1.0 nm or more and 5.0 nm or less. Such thicknesses make it easier to suppress unnecessary spin transmission while ensuring magnetic interaction with the shield.

[0044] 2, the thickness of the first magnetic layer 11 along the first direction D1 is defined as a first magnetic layer thickness t11. The thickness of the second magnetic layer 12 along the first direction D1 is defined as a second magnetic layer thickness t12. In the embodiment, the first magnetic layer thickness t11 is 2.0 nm or more and 10.0 nm or less. The second magnetic layer thickness t12 is 2.0 nm or more and 10.0 nm or less.

[0045] In the magnetic sensor 70A, the stack provided between the first shield 41 and the second shield 42 includes the first magnetic layer 11, the first intermediate layer 61, and the second magnetic layer 12. The stack is thin, making it easy to achieve high resolution.

[0046] For example, the magnetization direction of the second magnetic layer 12 changes due to the magnetic field to be detected. The change in the voltage Vx due to the change in the magnetization direction when the first current i1 is supplied may be based on, for example, the anomalous Hall effect (AHE). For example, the second magnetic layer 12 has the anomalous Hall effect.

[0047] For example, the second magnetic layer 12 includes at least one selected from the group consisting of CoMnGa, CoMnAl, and FePt. Such materials tend to provide a large anomalous Hall effect and, for example, a large detection output. CoMnGa and CoMnAl are, for example, Heusler alloy materials.

[0048] In the embodiment, the first region 31a and the second region 31b suppress the first current i1 from flowing through the first magnetic layer 11. Therefore, even if the first magnetic layer 11 contains a material with a large anomalous Hall effect, the anomalous Hall effect is suppressed. The material of the first magnetic layer 11 may be the same as the material of the second magnetic layer 12.

[0049] In the embodiment, the anomalous Hall effect may be small in the first magnetic layer 11. Even if a portion of the first current i1 flows through the first magnetic layer 11, adverse effects can be suppressed. For example, the material of the first magnetic layer 11 is preferably different from the material of the second magnetic layer 12. For example, the first magnetic layer 11 includes at least one selected from the group consisting of Co, Ni, and Fe. The first magnetic layer 11 may include at least one selected from the group consisting of CoFe, CoNiFe, NiFe, CoZrNb, FeN, FeSi, and FeAlSi. The first magnetic layer 11 may include, for example, a soft magnetic material having a relatively high saturation magnetic flux density and magnetic anisotropy in the in-plane direction. The above materials have a relatively small anomalous Hall effect. For example, it is easy to increase the change (difference) in voltage Vx between the first state and the second state.

[0050] As will be described below, the thickness of the first magnetic layer 11 (first magnetic layer thickness t11) may be different from the thickness of the second magnetic layer 12 (second magnetic layer thickness t12).

[0051] FIG. 3 is a schematic cross-sectional view illustrating the magnetic sensor according to the first embodiment. 3, in the magnetic sensor 70B according to the embodiment, the thickness of the first magnetic layer 11 (first magnetic layer thickness t11) is thinner than the thickness of the second magnetic layer 12 (second magnetic layer thickness t12). Except for this, the configuration of the magnetic sensor 70B may be the same as the configuration of the magnetic sensor 70A.

[0052] A small first magnetic layer thickness t11 further suppresses the influence of the anomalous Hall effect in the first magnetic layer 11. For example, it is easy to increase the change (difference) in the voltage Vx between the first state and the second state.

[0053] In the magnetic sensor 70B, the second magnetic layer 12 may include, for example, at least one selected from the group consisting of Co, Ni, and Fe. The second magnetic layer 12 may include, for example, at least one selected from the group consisting of CoMnGa, CoMnAl, and FePt. CoMnGa and CoMnAl are Heusler alloy materials. The material of the first magnetic layer 11 may be different from the material of the second magnetic layer 12. For example, the first magnetic layer 11 may include at least one selected from the group consisting of Co, Ni, and Fe. The first magnetic layer 11 may include, for example, at least one selected from the group consisting of CoFe, CoNiFe, NiFe, CoZrNb, FeN, FeSi, and FeAlSi.

[0054] (Second embodiment) FIG. 4 is a schematic perspective view illustrating the magnetic head and magnetic recording device according to the second embodiment. As shown in FIG. 4, the magnetic head 110 according to the embodiment includes a reproducing unit 70. The reproducing unit 70 includes the magnetic sensor according to the first embodiment (magnetic sensor 70A or magnetic sensor 70B). The magnetic head 110 is used together with a magnetic recording medium 80. In this example, the magnetic head 110 includes a recording unit 90. The recording unit 90 of the magnetic head 110 records information on the magnetic recording medium 80. The reproducing unit 70 reproduces the information recorded on the magnetic recording medium 80.

[0055] The magnetic recording medium 80 includes, for example, a medium substrate 82 and a magnetic recording layer 81 provided on the medium substrate 82. The magnetization 83 of the magnetic recording layer 81 is controlled by a recording unit 90. The recording unit 90 includes, for example, a first magnetic pole 91 and a second magnetic pole 92. The first magnetic pole 91 is, for example, a main magnetic pole. The second magnetic pole 92 is, for example, a trailing shield. The recording unit 90 may include a recording element 93. The recording element 93 may include a magnetic field control element or a high-frequency oscillation element. The recording element 93 may be omitted.

[0056] The reproducing unit 70 includes, for example, a first reproducing magnetic shield 72a, a second reproducing magnetic shield 72b, and a magnetic reproducing element 71. The magnetic reproducing element 71 is provided between the first reproducing magnetic shield 72a and the second reproducing magnetic shield 72b. The magnetic reproducing element 71 can output a signal corresponding to the magnetization 83 of the magnetic recording layer 81.

[0057] The first reproducing magnetic shield 72a corresponds to, for example, the first shield 41 (see FIG. 1). The second reproducing magnetic shield 72b corresponds to, for example, the second shield 42 (see FIG. 1). The magnetic reproducing element 71 includes a stack including a first magnetic layer 11, a second magnetic layer 12, and a first intermediate layer 61. In FIG. 4, the third shield 43, the fourth shield 44, the fifth shield 45, the sixth shield 46, etc. are omitted.

[0058] 4, magnetic recording medium 80 moves relative to magnetic head 110 in medium movement direction 85. Information corresponding to magnetization 83 of magnetic recording layer 81 is controlled by magnetic head 110 at any position. Information corresponding to magnetization 83 of magnetic recording layer 81 is reproduced by magnetic head 110 at any position.

[0059] FIG. 5 is a schematic perspective view illustrating a part of the magnetic recording device according to the embodiment. FIG. 5 illustrates a head slider. The magnetic head 110 is provided on a head slider 159. The head slider 159 includes, for example, Al2O3 / TiC. The head slider 159 moves relative to the magnetic recording medium while floating above or in contact with the magnetic recording medium.

[0060] The head slider 159 has, for example, an air inflow side 159A and an air outflow side 159B. The magnetic head 110 is disposed on the side of the air outflow side 159B of the head slider 159. This allows the magnetic head 110 to move relative to the magnetic recording medium while floating above or in contact with the magnetic recording medium.

[0061] FIG. 6 is a schematic perspective view illustrating the magnetic recording device according to the embodiment. 7A and 7B are schematic perspective views illustrating a part of the magnetic recording device according to the embodiment. The magnetic recording device may be a magnetic recording and reproducing device. As shown in FIG. 6, a rotary actuator is used in the magnetic recording device 150 according to the embodiment. The recording medium disk 180 is mounted on a spindle motor 180M. The recording medium disk 180 is rotated in the direction of the arrow AR by the spindle motor 180M. The spindle motor 180M responds to a control signal from a drive control unit. The magnetic recording device 150 according to the embodiment may include a plurality of recording medium disks 180. The magnetic recording device 150 may include a recording medium 181. The recording medium 181 is, for example, an SSD (Solid State Drive). The recording medium 181 may be, for example, a non-volatile memory such as a flash memory. For example, the magnetic recording device 150 may be a hybrid HDD (Hard Disk Drive).

[0062] The head slider 159 records and reproduces information to be recorded on the recording medium disk 180. The head slider 159 is provided at the tip of the thin-film suspension 154. Near the tip of the head slider 159, a magnetic head according to the embodiment is provided.

[0063] When the recording medium disk 180 rotates, the pressing pressure from the suspension 154 and the pressure generated at the air bearing surface (ABS) of the head slider 159 are balanced. The distance between the air bearing surface of the head slider 159 and the surface of the recording medium disk 180 is a predetermined flying height. In an embodiment, the head slider 159 may be in contact with the recording medium disk 180. For example, a contact traveling type may be applied.

[0064] The suspension 154 is connected to one end of an arm 155 (e.g., an actuator arm). The arm 155 has, for example, a bobbin portion. The bobbin portion holds a drive coil. A voice coil motor 156 is provided at the other end of the arm 155. The voice coil motor 156 is a type of linear motor. The voice coil motor 156 includes, for example, a drive coil and a magnetic circuit. The drive coil is wound around the bobbin portion of the arm 155. The magnetic circuit includes a permanent magnet and an opposing yoke. The drive coil is provided between the permanent magnet and the opposing yoke. The suspension 154 has one end and the other end. The magnetic head is provided at one end of the suspension 154. The arm 155 is connected to the other end of the suspension 154.

[0065] Arm 155 is held by ball bearings. The ball bearings are provided at two locations, above and below bearing portion 157. Arm 155 can rotate and slide using voice coil motor 156. The magnetic head can be moved to any position on recording medium disk 180.

[0066] FIG. 7(a) is an enlarged perspective view of a head stack assembly 160, illustrating the configuration of a portion of the magnetic recording device. FIG. 7B is a perspective view illustrating a magnetic head assembly (head gimbal assembly: HGA) 158 that is part of the head stack assembly 160. As shown in FIG.

[0067] 7(a), the head stack assembly 160 includes a bearing portion 157, a head gimbal assembly 158, and a support frame 161. The head gimbal assembly 158 extends from the bearing portion 157. The support frame 161 extends in the opposite direction to the extension direction of the head gimbal assembly 158. The support frame 161 supports a coil 162 of the voice coil motor 156.

[0068] As shown in FIG. 7( b ), the head gimbal assembly 158 has an arm 155 extending from a bearing portion 157 and a suspension 154 extending from the arm 155 .

[0069] A head slider 159 is provided at the tip of the suspension 154. The head slider 159 is provided with the magnetic head according to the embodiment.

[0070] A magnetic head assembly (head gimbal assembly) 158 according to the embodiment includes a magnetic head according to the embodiment, a head slider 159 provided with the magnetic head, a suspension 154, and an arm 155. The head slider 159 is provided at one end of the suspension 154. The arm 155 is connected to the other end of the suspension 154.

[0071] The suspension 154 has, for example, lead wires (not shown) for recording and reproducing signals. The suspension 154 may also have, for example, lead wires (not shown) for a heater for adjusting the flying height. The suspension 154 may also have lead wires (not shown) for an oscillation element, for example. These lead wires are electrically connected to a plurality of electrodes provided on the magnetic head.

[0072] The magnetic recording device 150 is provided with a signal processing unit 190. The signal processing unit 190 uses a magnetic head to record and reproduce signals on a magnetic recording medium. The input / output lines of the signal processing unit 190 are connected to, for example, electrode pads of the head gimbal assembly 158, and are electrically connected to the magnetic head.

[0073] The magnetic recording device 150 according to the embodiment includes a magnetic recording medium, a magnetic head according to the embodiment, a movable unit, a position control unit, and a signal processing unit. The movable unit enables the magnetic recording medium and the magnetic head to be moved relatively while being separated from each other or in contact with each other. The position control unit aligns the magnetic head with a predetermined recording position on the magnetic recording medium. The signal processing unit records and reproduces signals on the magnetic recording medium using the magnetic head.

[0074] For example, the magnetic recording medium is a recording medium disk 180. The movable part includes, for example, a head slider 159. The position control unit includes, for example, a head gimbal assembly 158.

[0075] The embodiment may include the following configurations (for example, technical solutions). (Configuration 1) A first shield; A second shield; a third shield provided between the first shield and the second shield; a fourth shield provided between the first shield and the second shield, wherein a second direction from the third shield to the fourth shield intersects with a first direction from the first shield to the second shield; a fifth shield provided between the third shield and the second shield; a sixth shield provided between the fourth shield and the second shield, the sixth shield extending from the fifth shield to the sixth shield being aligned with the second direction; a first magnetic layer provided between the first shield and the second shield, the first magnetic layer being between the third shield and the fourth shield in the second direction; a second magnetic layer provided between the first magnetic layer and the second shield, the second magnetic layer being between the fifth shield and the sixth shield in the second direction, and the second magnetic layer being electrically connected to the fifth shield and the sixth shield; a first member including a first region and a second region, the first region being provided between the third shield and the first magnetic layer, and the second region being provided between the first magnetic layer and the fourth shield; a first terminal electrically connected to the fifth shield; a second terminal electrically connected to the sixth shield; a third terminal electrically connected to the first magnetic layer; a fourth terminal electrically connected to the second magnetic layer; A magnetic sensor comprising:

[0076] (Configuration 2) The magnetic sensor according to configuration 1, wherein the voltage between the third terminal and the fourth terminal when a first current flows between the first terminal and the second terminal can change depending on the magnetic field to be detected.

[0077] (Configuration 3) a nonmagnetic first conductive region provided between the fifth shield and the second magnetic layer and electrically connected to the fifth shield and the second magnetic layer; a nonmagnetic second conductive region provided between the second magnetic layer and the sixth shield and electrically connected to the second magnetic layer and the sixth shield; Furthermore, The magnetic sensor of configuration 1 or 2, wherein the concentration of the first element in the first region is higher than the concentration of the first element in the first conductive region, and the concentration of the first element in the second region is higher than the concentration of the first element in the second conductive region, or the first conductive region and the second conductive region do not contain the first element, and the first element includes at least one selected from the group consisting of oxygen and nitrogen.

[0078] (Configuration 4) 4. The magnetic sensor according to configuration 3, wherein at least one of the first region and the second region further includes a second element including at least one selected from the group consisting of Si, Al, Ta, Hf, and Mg.

[0079] (Configuration 5) 5. The magnetic sensor of claim 3 or 4, wherein at least one of the first conductive region and the second conductive region includes at least one selected from the group consisting of Au, Ta, Pt, Ru, Hf, W, Mo, Ir, Cr, Tb, and Rh.

[0080] (Configuration 6) a non-magnetic first intermediate layer provided between the first magnetic layer and the second magnetic layer; a nonmagnetic second intermediate layer provided between the third shield and the fifth shield; a nonmagnetic third intermediate layer provided between the fourth shield and the sixth shield; Furthermore, A magnetic sensor described in any one of configurations 1 to 5, wherein at least one of the first intermediate layer, the second intermediate layer, and the third intermediate layer contains Ru, and the thickness of at least one of the first intermediate layer along the first direction is 0.1 nm or more and 1.0 nm or less, or 1.4 nm or more and 2.2 nm or less, or 2.6 nm or more and 3.5 nm or less.

[0081] (Configuration 7) a non-magnetic first intermediate layer provided between the first magnetic layer and the second magnetic layer; a nonmagnetic second intermediate layer provided between the third shield and the fifth shield; a nonmagnetic third intermediate layer provided between the fourth shield and the sixth shield; Furthermore, A magnetic sensor described in any one of configurations 1 to 5, wherein at least one of the first intermediate layer, the second intermediate layer, and the third intermediate layer contains Ir, and the thickness of at least one of the first intermediate layer along the first direction is 0.3 nm or more and 0.8 nm or less, or 1.1 nm or more and 1.6 nm or less.

[0082] (Configuration 8) 6. The magnetic sensor according to any one of configurations 1 to 5, wherein the first magnetic layer is antiferromagnetically coupled to the second magnetic layer.

[0083] (Configuration 9) 9. The magnetic sensor according to any one of configurations 1 to 8, wherein the second magnetic layer includes at least one selected from the group consisting of CoMnGa, CoMnAl, and FePt.

[0084] (Configuration 10) 10. The magnetic sensor of any one of configurations 1 to 9, wherein the material of the first magnetic layer is different from the material of the second magnetic layer.

[0085] (Configuration 11) 11. The magnetic sensor of claim 9, wherein a first magnetic layer thickness along the first direction of the first magnetic layer is smaller than a second magnetic layer thickness along the first direction of the second magnetic layer.

[0086] (Configuration 12) The first member is a third region provided between the first shield and the third shield; a fourth region provided between the first shield and the fourth shield; further comprising 12. The magnetic sensor according to any one of configurations 1 to 11, wherein the third region and the fourth region are insulating.

[0087] (Configuration 13) the first region is continuous with the third region, 13. The magnetic sensor of claim 12, wherein the second region is continuous with the fourth region.

[0088] (Configuration 14) The first member is a fifth region provided between the fifth shield and the second shield; a sixth region provided between the sixth shield and the second shield; further comprising 14. The magnetic sensor according to any one of configurations 1 to 13, wherein the fifth region and the sixth region are insulating.

[0089] (Configuration 15) a nonmagnetic fourth intermediate layer provided between the first shield and the first magnetic layer; a nonmagnetic fifth intermediate layer provided between the second magnetic layer and the second shield; Furthermore, 15. The magnetic sensor according to any one of configurations 1 to 14, wherein the fourth intermediate layer and the fifth intermediate layer include at least one selected from the group consisting of Ti, Cu, Ru, Ta, Cr, Hf, and Mg.

[0090] (Configuration 16) a thickness of the first conductive region along the second direction is 1.0 nm or more and 5.0 nm or less; 6. The magnetic sensor according to any one of configurations 3 to 5, wherein the second conductive region has a second conductive region thickness along the second direction of 1.0 nm to 5.0 nm.

[0091] (Configuration 17) A first shield; A second shield; a third shield provided between the first shield and the second shield; a fourth shield provided between the first shield and the second shield, wherein a second direction from the third shield to the fourth shield intersects with a first direction from the first shield to the second shield; a fifth shield provided between the third shield and the second shield; a sixth shield provided between the fourth shield and the second shield, the sixth shield extending from the fifth shield to the sixth shield being aligned with the second direction; a first magnetic layer provided between the first shield and the second shield, the first magnetic layer being between the third shield and the fourth shield in the second direction; a second magnetic layer provided between the first magnetic layer and the second shield, the second magnetic layer being between the fifth shield and the sixth shield in the second direction, the second magnetic layer being electrically connected to the fifth shield and the sixth shield, and the second magnetic layer being antiferromagnetically coupled to the first magnetic layer; a first member including a first region and a second region, the first region being provided between the third shield and the first magnetic layer, and the second region being provided between the first magnetic layer and the fourth shield; a first terminal electrically connected to the fifth shield; a second terminal electrically connected to the sixth shield; a third terminal electrically connected to the first magnetic layer; a fourth terminal electrically connected to the second magnetic layer; A magnetic sensor comprising:

[0092] (Configuration 18) 18. The magnetic sensor according to any one of configurations 1 to 17, wherein the second magnetic layer has an Anomalous Hall Effect.

[0093] (Configuration 19) A magnetic head comprising the magnetic sensor according to any one of configurations 1 to 18.

[0094] (Configuration 20) a magnetic head according to configuration 19; a magnetic recording medium; Equipped with The magnetic recording device, wherein the magnetic sensor is capable of reproducing information recorded on the magnetic recording medium.

[0095] According to the embodiments, it is possible to provide a magnetic sensor, a magnetic head, and a magnetic recording device that can improve resolution.

[0096] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0097] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the magnetic sensor, magnetic head, and magnetic recording device, such as the shield, magnetic layer, conductive region, member, intermediate layer, and terminal, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0098] Any combination of two or more elements of each embodiment to the extent technically possible is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

[0099] In addition, all magnetic sensors, magnetic heads, and magnetic recording devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the magnetic sensors, magnetic heads, and magnetic recording devices described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0100] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0101] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0102] 11, 12: first and second magnetic layers, 11M, 12M: first and second magnetizations, 21, 22: first and second conductive regions, 31: first member, 31a-32f: first to sixth regions, 41-46: first to sixth shields, 43M-46M: third to sixth magnetizations, 51-54: first to fourth terminals, 61-65: first to fifth intermediate layers, 70: reproduction unit, 70A, 70B: magnetic sensor, 71: magnetic reproduction element, 72a, 72b: first and second reproduction magnetic shields, 75a, 75b: first and second circuits, 80: magnetic recording medium, 81: magnetic recording layer, 82: medium substrate, 83: magnetization, 85: medium movement direction, 90: recording unit, 91, 92: first and second magnetic poles, 93: recording element, 110: magnetic head, 150: magnetic recording device, 154: suspension, 155: arm, 156: voice coil motor, 157: bearing portion, 158: head gimbal assembly, 159: head slider, 159A: air inlet side, 159B: air outlet side, 160: head stack assembly, 161: support frame, 162: coil, 180: recording medium disk, 180M: spindle motor, 181: recording medium, 190: signal processing unit, AR: arrow, D1 to D3: first to third directions, Vx: voltage, i1: first current, t11, t12: first and second magnetic layer thicknesses, t21, t22: first and second conductive region thicknesses

Claims

1. A first shield; A second shield; and a third shield provided between the first shield and the second shield; a fourth shield provided between the first shield and the second shield, wherein a second direction from the third shield to the fourth shield intersects with a first direction from the first shield to the second shield; a fifth shield provided between the third shield and the second shield; a sixth shield provided between the fourth shield and the second shield, the sixth shield extending from the fifth shield to the sixth shield being aligned with the second direction; a first magnetic layer provided between the first shield and the second shield, the first magnetic layer being between the third shield and the fourth shield in the second direction; a second magnetic layer provided between the first magnetic layer and the second shield, the second magnetic layer being between the fifth shield and the sixth shield in the second direction, and the second magnetic layer being electrically connected to the fifth shield and the sixth shield; a first member including a first region and a second region, the first region being provided between the third shield and the first magnetic layer, and the second region being provided between the first magnetic layer and the fourth shield; a first terminal electrically connected to the fifth shield; a second terminal electrically connected to the sixth shield; a third terminal electrically connected to the first magnetic layer; a fourth terminal electrically connected to the second magnetic layer; A magnetic sensor comprising:

2. 2. The magnetic sensor according to claim 1, wherein a voltage between the third terminal and the fourth terminal when a first current flows between the first terminal and the second terminal is variable depending on a magnetic field to be detected.

3. a nonmagnetic first conductive region provided between the fifth shield and the second magnetic layer and electrically connected to the fifth shield and the second magnetic layer; a nonmagnetic second conductive region provided between the second magnetic layer and the sixth shield and electrically connected to the second magnetic layer and the sixth shield; Furthermore, 2. The magnetic sensor of claim 1, wherein the concentration of the first element in the first region is higher than the concentration of the first element in the first conductive region, and the concentration of the first element in the second region is higher than the concentration of the first element in the second conductive region, or the first conductive region and the second conductive region do not contain the first element, and the first element includes at least one selected from the group consisting of oxygen and nitrogen.

4. 4. The magnetic sensor according to claim 3, wherein at least one of the first conductive region and the second conductive region includes at least one selected from the group consisting of Au, Ta, Pt, Ru, Hf, W, Mo, Ir, Cr, Tb, and Rh.

5. The magnetic sensor according to claim 1 , wherein the first magnetic layer is antiferromagnetically coupled to the second magnetic layer.

6. 2. The magnetic sensor according to claim 1, wherein the second magnetic layer includes at least one selected from the group consisting of CoMnGa, CoMnAl, and FePt.

7. The magnetic sensor according to claim 1 , wherein a first magnetic layer thickness along the first direction of the first magnetic layer is thinner than a second magnetic layer thickness along the first direction of the second magnetic layer.

8. A first shield; A second shield; and a third shield provided between the first shield and the second shield; a fourth shield provided between the first shield and the second shield, wherein a second direction from the third shield to the fourth shield intersects with a first direction from the first shield to the second shield; a fifth shield provided between the third shield and the second shield; a sixth shield provided between the fourth shield and the second shield, the sixth shield extending from the fifth shield to the sixth shield being aligned with the second direction; a first magnetic layer provided between the first shield and the second shield, the first magnetic layer being between the third shield and the fourth shield in the second direction; a second magnetic layer provided between the first magnetic layer and the second shield, the second magnetic layer being between the fifth shield and the sixth shield in the second direction, the second magnetic layer being electrically connected to the fifth shield and the sixth shield, and the second magnetic layer being antiferromagnetically coupled to the first magnetic layer; a first member including a first region and a second region, the first region being provided between the third shield and the first magnetic layer, and the second region being provided between the first magnetic layer and the fourth shield; a first terminal electrically connected to the fifth shield; a second terminal electrically connected to the sixth shield; a third terminal electrically connected to the first magnetic layer; a fourth terminal electrically connected to the second magnetic layer; A magnetic sensor comprising:

9. A magnetic head comprising the magnetic sensor according to any one of claims 1 to 8.

10. The magnetic head according to claim 9; a magnetic recording medium; Equipped with The magnetic recording device, wherein the magnetic sensor is capable of reproducing information recorded on the magnetic recording medium.

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