Lateral oriented metal-oxide-semiconductor device and a method of manufacturing lateral oriented metal-oxide-semiconductor

Abstract

A B S T R A C T According to a first example ofthe disclosure a single cell lateral oriented Metal- Oxide-Semiconductor device is proposed. The device comprises a semiconductor comprising a first surface; a first region having a first conductivity type; an at least one pair of trenches, wherein each trench extends from the first surface into the first region, each of the trench comprising an insulating element and a conductive element, wherein the insulating element is arranged in between the conductive element and the first region, and wherein the insulating element has a substantially uniform width; a second region having a second conductivity type being different from the first conductivity type, wherein the second region extends from the first surface into the first region and is located on an outer side of the pair of trenches and adjacent to the trench, and a third region having a second conductivity type being different from the first conductivity type, wherein the third region extends from the first surface into the first region and is located in between trenches and adjacent to the trench, and an insulating region on the first surface comprising openings to provide electrical contacts to the second and third region. This disclosure also relates to a method of manufacturing a lateral oriented Metal-Oxide-Semiconductor device. Figure 1