Method for highly efficient decomposition of silicon semiconductor layer from photovoltaic panels and decomposition device

Abstract

The method for highly efficient decomposition of the silicon semiconductor layer from photovoltaic panels stripped of electronic accessories, frames, glass layer and covering polymer film is based on the fact that in the first step the covering polymer film (D), the semiconductor silicon layer (A) and the underlying polymer film (B) on the carrier (C) of the photovoltaic panel in the laser module are continuously exposed to the action of a laser beam from at least one laser head. The laser beam has a pulsed character with a frequency of min. 130 kHz and a pulse length of min. 250 ns and has an energy of max. 0.05 mJ / cm2. Subsequently, under the influence of the thermal energy of the laser beam, the covering polymer film (D) and the underlying polymer film (B) are evaporated and the silicon fragments (A1) together with the metal interconnecting conductors (A2) of the semiconductor silicon layer are released from the carrier (C) of the photovoltaic panel, while when the laser beam is applied to the covering polymer film (D), the semiconductor silicon layer (A) and the underlying polymer film (B), the vapors from the evaporated covering polymer film (D) and the underlying polymer film (B) are captured by the suction device. In the second step, the released silicon fragments (A1) are separated from the metal interconnecting conductors (A2) in the separation module.