Optical semiconductor devices and methods for manufacturing optical semiconductor devices

Abstract

This invention provides an optical semiconductor device with minimal increase in dark current even under high temperature and high humidity conditions, and a method for manufacturing the same. The disclosed optical semiconductor device includes: an electrode, and at least a portion of an optical filter connected to the electrode. The optical semiconductor device has the optical filter, characterized in that the optical filter comprises a dielectric multilayer film, a protective film comprising SiO2 or Si3N4 on the uppermost layer of the optical filter, and an intermediate layer between the uppermost layer and the protective film, which is darker than the uppermost layer and the protective film as observed in a cross-sectional TEM image.