Catalyst influenced pattern transfer technology

Abstract

Various embodiments of the present invention generally relate to semiconductor device architectures and manufacturing techniques. More particularly, some embodiments of the present invention relate to the use of catalyst-influenced chemical etching (CICE) techniques applied to the etching of silicon in three-dimensional memory architectures and transistors. CICE is a catalyst-based etching method that can be used on semiconductors and multilayer semiconductors. Various embodiments of the CICE process can use catalysts to etch semiconductor substrates and create high aspect ratio features. Manufacturing tools for achieving this are also disclosed. This should enable the adoption of this technology in the manufacture of semiconductor devices.