Package and method of manufacturing the same

Abstract

A package includes a plurality of tube cores, a retaining wall structure, a plurality of conductive structures, an encapsulation body and a redistribution structure. The retaining wall structure surrounds at least one of the tube cores. The retaining wall structure has an inner surface facing the at least one tube core and an outer surface opposite to the inner surface. The conductive structure surrounds the at least one tube core. The encapsulation body encapsulates the tube core, the retaining wall structure and the conductive structure. At least a portion of the encapsulation body is located between the inner surface and the outer surface of the retaining wall structure and penetrates the retaining wall structure. The redistribution structure is arranged on the encapsulation body and is electrically connected to the tube core and the conductive structure.

Description

Technical Field

[0001] The embodiment of the present invention relates to a package. More specifically, the embodiment of the present invention relates to a package with a retaining wall structure. Background Art

[0002] The semiconductor industry has experienced rapid growth due to the continued increase in the integration density of various electronic components (i.e., transistors, diodes, resistors, capacitors, etc.). To a large extent, the increase in integration density comes from the repeated reduction of the minimum feature size, which enables more smaller components to be integrated into a given area. These smaller electronic components also require the use of smaller packages that occupy less area than previous packages. Currently, integrated fan-out packages are becoming increasingly popular due to their compactness. To prevent electromagnetic field interference from blocking the operation of the die in the integrated fan-out package, appropriate shielding mechanisms can be implemented within the system. Summary of the invention

[0003] A package includes a plurality of tube cores, a retaining wall structure, a plurality of conductive structures, an encapsulation body and a rewiring structure. The retaining wall structure surrounds at least one of the tube cores. The retaining wall structure has an inner surface facing the at least one tube core and an outer surface opposite to the inner surface. The conductive structure surrounds the at least one tube core. The encapsulation body encapsulates the tube core, the retaining wall structure and the conductive structure. At least a portion of the encapsulation body is located between the inner surface and the outer surface of the retaining wall structure and penetrates the retaining wall structure. The rewiring structure is arranged on the encapsulation body. The rewiring structure is electrically connected to the tube core and the conductive structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] The various aspects of the present disclosure will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

[0005] Figure 1 is a schematic top view of a package according to some embodiments of the present disclosure.

[0006] Figures 2A to 2M yes Figure 1 Schematic cross-sectional view of the manufacturing process of one area of ​​the package body.

[0007] Figure 3A is a schematic perspective view of a retaining wall structure according to some embodiments of the present disclosure.

[0008] Figure 3Byes Figure 3A A schematic enlarged view of the staggered portion of the retaining wall structure.

[0009] Figure 4A is a schematic perspective view of a retaining wall structure according to some alternative embodiments of the present disclosure.

[0010] Figure 4B yes Figure 4A Schematic enlargement of an area of ​​the retaining wall structure.

[0011] Figure 4C is a schematic enlarged view of an area of ​​a retaining wall structure according to some alternative embodiments of the present disclosure.

[0012] Figure 5 is a schematic cross-sectional view of a region of a package according to some alternative embodiments of the present disclosure.

[0013] Figure 6 is a schematic cross-sectional view of a region of a package according to some alternative embodiments of the present disclosure.

[0014] Description of Figure Numbers

[0015] 10: Encapsulation

[0016] 100: Retaining wall structure

[0017] 100a: Inner surface

[0018] 100b: outer surface

[0019] 100c, T 104a , T 104b : Top surface

[0020] 100d: bottom surface

[0021] 102: Framework

[0022] 104: Interlaced

[0023] 104a: Main body

[0024] 104b: Bridge

[0025] 110: Seed material layer

[0026] 110a: Seed layer

[0027] 120: Precursor powder layer

[0028] 120a: Unsintered part

[0029] 120b: Sintering part

[0030] 200: Conductive structure

[0031] 300: First die

[0032] 300a: rear surface

[0033] 300b: front surface

[0034] 300c: Active surface

[0035] 300': Second tube core

[0036] 300”: The third tube core

[0037] 310: Semiconductor substrate

[0038] 320: Conductive pad

[0039] 330: Passivation layer

[0040] 340: Post passivation layer

[0041] 350: Conductive vias

[0042] 360: Protective layer

[0043] 400: Encapsulation material

[0044] 400a: Encapsulated body

[0045] 500: Rewiring Structure

[0046] 500a: Interlayer dielectric layer

[0047] 500b: Rewiring conductive layer

[0048] 600: Conductive terminal

[0049] 700: Chip

[0050] 702: Conductive joint

[0051] 800: Cover

[0052] 900: Conductive sheet

[0053] 900a: first conductive sheet

[0054] 900b: second conductive sheet

[0055] AD: Adhesive layer

[0056] C: Carrier board

[0057] CH: Through Channel

[0058] DB: Debonding layer

[0059] EM: Launcher

[0060] H100 , H 104a , H 104b , H CH :high

[0061] L: Laser beam

[0062] R, R': Area

[0063] T 100 :thickness

[0064] d1, d2, d4: spacing

[0065] d3: width DETAILED DESCRIPTION

[0066] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the following description in which a first feature is formed "on" a second feature or "on" a second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may reuse figure numerals and / or letters in various examples. This repetition is for the purpose of brevity and clarity, rather than itself representing the relationship between the various embodiments and / or configurations discussed.

[0067] Furthermore, for ease of description, spatially relative terms such as "beneath," "below," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or feature to another (other) element or feature as shown in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may have other orientations (rotated 90 degrees or at other orientations), and the spatially relative terms used herein should be interpreted accordingly.

[0068] The present disclosure may also include other features and processes. For example, a test structure may be included to help perform verification testing on a three-dimensional (3D) package or a three-dimensional integrated circuit (3DIC) device. The test structure may, for example, include a test pad formed in a redistribution layer or on a substrate so that the three-dimensional package or the three-dimensional integrated circuit can be tested, a probe and / or a probe card can be used, etc. Verification testing can be performed on intermediate structures and final structures. In addition, the structures and methods disclosed herein can be used in combination with a test method including intermediate verification of a known good die to improve yield and reduce costs.

[0069] Figure 1 is a schematic top view of a package 10 according to some embodiments of the present disclosure. Figure 1 The package 10 includes a first tube core 300, a second tube core 300', a third tube core 300", a retaining wall structure 100 and an encapsulation body 400a. The encapsulation body 400a encapsulates the first tube core 300, the second tube core 300', the third tube core 300" and the retaining wall structure 100. For simplicity, Figure 1 Only the first tube core 300, the second tube core 300', the third tube core 300", the retaining wall structure 100 and the encapsulation body 400a are shown to show the relative positions of these components, and some components in the package body 10 are omitted in the figure. The description of other components in the package body 10 will be discussed in detail later. In some embodiments, the package body 10 may be referred to as an integrated fan-out package (InFO) package. However, the present disclosure is not limited to this. In some alternative embodiments, the package body 10 may be other types of packages.

[0070] In some embodiments, the first die 300, the second die 300' and the third die 300" may be the same type of die that performs the same function. In some alternative embodiments, the first die 300, the second die 300' and the third die 300" may be different types of die that perform different functions. The first die 300, the second die 300' and the third die 300" may be internal memory die (e.g., dynamic random access memory (DRAM), static random access memory (SRAM), non-volatile random access memory (NVRAM) and / or similar internal memory die), logic die, or radio frequency (RF) die. It should be noted that although in Figure 1Three dies are shown in FIG. 1 , but this number of dies is merely used as an exemplary representation. In some alternative embodiments, a greater number of dies or a lesser number of dies may be found in package 10 .

[0071] The retaining wall structure 100 has an inner surface 100a and an outer surface 100b opposite to the inner surface 100a. Figure 1 As shown, the inner surface 100a of the retaining wall structure 100 faces the first tube core 300. In other words, the retaining wall structure 100 surrounds the first tube core 300. In some embodiments, the first tube core 300 can be a radio frequency tube core, and the retaining wall structure 100 surrounding the first tube core 300 can provide an electromagnetic interference (EMI) shielding function. In some embodiments, since the retaining wall structure 100 only surrounds one of the three tube cores, the retaining wall structure 100 can be referred to as a compartment shielding structure. However, the present disclosure is not limited to this. In some alternative embodiments, the retaining wall structure 100 can surround all three tube cores to form a conformal shielding structure. The configuration and formation method of the retaining wall structure 100 will be discussed below.

[0072] Figures 2A to 2M yes Figure 1 Schematic cross-sectional view of the manufacturing process of a region R of the package 10 in FIG. The following description will focus on the manufacturing process in the region R of the package 10. Figure 2A , a carrier C is provided. The carrier C may be a glass substrate. However, the present disclosure is not limited thereto. Other suitable materials may be used as the carrier C, as long as the material can withstand the following manufacturing process while supporting the components formed thereon. A peeling layer DB and a seed material layer 110 are sequentially formed on the carrier C. In some embodiments, the peeling layer DB is formed on the upper surface of the carrier C and is located between the carrier C and the seed material layer 110. In some embodiments, the peeling layer DB may be a light-to-heat conversion (LTHC) release layer. The seed material layer 110 may include a titanium layer, a copper layer, a titanium / copper composite layer, or any other suitable conductive material. The seed material layer 110 may be formed, for example, by a sputtering process, a physical vapor deposition (PVD) process, or other similar processes. In some embodiments, the seed material layer 110 helps to enhance the adhesion between the peeling layer DB and the components subsequently formed thereon.

[0073] Reference Figure 2B, a precursor powder layer 120 is formed on the seed material layer 110. In some embodiments, the precursor powder layer 120 may be in a liquid form or a slurry form. For example, the precursor powder layer 120 may include a binder and a conductive powder randomly dispersed in the binder. In some embodiments, the binder may include water, isopropyl alcohol, a resin, or a combination thereof. In some embodiments, the conductive powder is a heat-fusible powder. For example, the conductive powder may include copper powder, stainless steel powder, solder powder, gold powder, nickel iron (NiFe) powder, nickel iron chromium (NiFeCr) powder, powder formed by alloys thereof, or a combination thereof. In some embodiments, the precursor powder layer 120 may also include a dispersing agent to enhance the dispersion of the conductive powder in the binder. However, the present disclosure is not limited thereto. In some alternative embodiments, the precursor powder layer 120 may be free of a binder and may consist only of conductive powder.

[0074] Reference Figure 2C , an emitting device EM is provided to selectively sinter the hot-melt conductive powder. In some embodiments, external energy can be provided in certain areas of the precursor powder layer 120 to form a desired pattern. For example, the emitting device EM can provide a laser beam L to sinter part of the precursor powder layer 120. The precursor powder layer 120 exposed to the laser energy is sintered into a solid mass, thereby forming a sintered portion 120b. That is, when irradiated with the laser beam L, the precursor powder layer 120 is divided into an unsintered portion 120a and a sintered portion 120b. The sintered portion 120b corresponds to the desired pattern. After the sintered portion 120b is formed, Figure 2B and Figure 2C The steps shown can be repeated multiple times to form a desired pattern. For example, after the emitting device EM completes the scanning Figure 2C After the precursor powder layer 120 is formed, another layer of precursor powder (not shown) is deposited on the precursor powder layer 120. Then, the emission device EM scans the newly formed precursor powder layer to selectively sinter a portion of the newly formed precursor powder layer. After several repetitions of the steps, the sintered portion 120b may be constructed as shown in FIG. Figure 2D Height shown.

[0075] Reference Figure 2C and Figure 2DAfter the sintered portion 120b of the precursor powder layer 120 is built to a desired shape / height, the unsintered portion 120a of the precursor powder layer 120 is removed. In some embodiments, the unsintered portion 120a of the precursor powder layer 120 can be removed by blowing away the conductive powder of the unsintered portion 120a. However, the present disclosure is not limited thereto. Other suitable stripping methods can be used to remove the unsintered portion 120a.

[0076] Reference Figure 2D and Figure 2E , removing a portion of the seed material layer 110 to form a seed layer 110a. In some embodiments, the seed material layer 110 (eg, Figure 2C 120b) to form a seed layer 110a. That is, the seed material layer 110 not covered by the sintered portion 120b is removed. In some embodiments, the sintered portion 120b and the seed layer 110a may be collectively referred to as a retaining wall structure 100. However, since the seed layer 110a and the sintered portion 120b are formed at different stages by different processes, an interface (such as Figure 2E For simplicity, the interface will be omitted in the following figures. FIG. 2B to FIG. 2D The process shown can be referred to as a three-dimensional printing process. Figure 2B to Figure 2D The steps shown may correspond to a selective laser sintering (SLS) process. That is, the retaining wall structure 100 is formed on the carrier C by a three-dimensional printing process. In some embodiments, the material of the retaining wall structure 100 includes copper, stainless steel, solder, gold, nickel iron (NiFe), nickel iron chromium (NiFeCr), alloys thereof, or combinations thereof. Since the retaining wall structure 100 is formed by a three-dimensional printing process, the retaining wall structure 100 may have a smooth sidewall profile. In some embodiments, due to the flexibility provided by the three-dimensional printing process, the retaining wall structure 100 may be manufactured to any desired height. FIG. 3A to FIG. 3B as well as FIG. 4A to FIG. 4C Let's discuss the construction of the retaining wall structure 100.

[0077] Figure 3A is a schematic perspective view of a retaining wall structure 100 according to some embodiments of the present disclosure. Figure 3AThe retaining wall structure 100 may be divided into a frame portion 102 and a staggered portion 104. The staggered portion 104 is connected to the frame portion 102 to form a loop structure. In some embodiments, the retaining wall structure 100 has a height H of 50 μm to 1000 μm along the z-axis direction. 100 On the other hand, the retaining wall structure 100 has a thickness T of 50 μm to 500 μm along the x-axis direction. 100 In some embodiments, the thickness T of the retaining wall structure 100 is 100 It can represent the distance between the inner surface 100a and the outer surface 100b. Figure 3A As shown, the frame portion 102 has a uniform height and a uniform thickness. In other words, the height and thickness of the frame portion 102 correspond to the height H and thickness of the retaining wall structure 100, respectively. 100 and thickness T 100 On the contrary, the staggered portion 104 does not have a uniform height. Figure 3B The shape and size of the staggered portion 104 are described.

[0078] Figure 3B yes Figure 3A Schematic enlarged view of the staggered portion 104 of the retaining wall structure 10. Figure 3B , the staggered portion 104 includes a plurality of main body portions 104a and a plurality of bridge portions 104b. The main body portions 104a are separated from each other and connected by corresponding bridge portions 104b. In some embodiments, the main body portions 104a are arranged along the x-axis direction. In other words, the main body portions 104a are parallel to each other. On the other hand, the bridge portions 104b are arranged in parallel along the y-axis direction to connect the main body portions 104a. In some embodiments, the bridge portions 104b and the main body portions 104a may form an angle. The angle may be greater than 0° and less than 180°. For example, Figure 3B As shown, the bridge portion 104b may be perpendicular to the main body portion 104a.

[0079] In some embodiments, the spacing between two adjacent main body portions 104a is in the range of 30 μm to 1000 μm. For example, the spacing d1 between two adjacent main body portions 104 along the x-axis direction may be in the range of 30 μm to 1000 μm. Similarly, the spacing d2 between two adjacent main body portions 104 along the y-axis direction may also be in the range of 30 μm to 1000 μm. In some embodiments, the spacing d2 is equivalent to the length of the bridge portion 104b in the y-axis direction. That is, the length of the bridge portion 104b may be in the range of 30 μm to 1000 μm. The relationship between the spacing d1 and the spacing d2 is not particularly limited. In some embodiments, the spacing d1 may be greater than the spacing d2. However, it does not constitute a limitation in the present disclosure. In some alternative embodiments, the spacing d1 may be equal to or less than the spacing d2.

[0080] In some embodiments, the height H of the main body 104a in the z-axis direction is 104a The height of the frame portion 102 (the height H of the retaining wall structure 100) 100 That is, the height H of the main body 104a is the same as 104a It may be in the range of 50 μm to 1000 μm. On the other hand, the height H of the bridge portion 104 b in the z-axis direction is 104b Smaller than the height H of the main body 104a 104a For example, the height H of the bridge portion 104b is 104b The height H of the main body 104a may be in the range of 30 μm to 970 μm. 104a The height H of the bridge portion 104b 104b The ratio between them ranges from 1:19 to 33:1.

[0081] In some embodiments, the top surface T of the main body 104a 104a The top surface T of the bridge portion 104b 104b Since the height H of the main body 104a 104a Greater than the height H of the bridge portion 104b 104b , and the top surface T of the main body 104a 104a The top surface T of the bridge portion 104b 104b The bridge portions 104b are coplanar, so a hollow portion is formed under each bridge portion 104b. The hollow portion under each bridge portion 104b and the space between two adjacent bridge portions 104b can be collectively referred to as a through channel CH. In some embodiments, the through channel CH penetrates the retaining wall structure 100 to communicate the inner surface 100a and the outer surface 100b of the retaining wall structure 100.

[0082] Reference again Figure 3AAlthough the staggered portion 104 is shown as being located on one side of the retaining wall structure 100, the present disclosure is not limited thereto. In some alternative embodiments, the staggered portion 104 may be located on two sides, three sides, or all four sides of the retaining wall structure 100. When the staggered portion 104 is located on all four sides of the retaining wall structure 100, the retaining wall structure 100 is composed of four staggered portions 104 without a frame portion 102. It should be noted that Figure 3A and Figure 3B The structure shown in the figure is only an exemplary illustration of the retaining wall structure 100, and the present disclosure is not limited thereto. In some alternative embodiments, the retaining wall structure 100 may be constructed in other forms. FIG. 4A to FIG. 4C An alternative configuration of the retaining wall structure 100 will now be described.

[0083] Figure 4A is a schematic perspective view of a retaining wall structure 100 according to some alternative embodiments of the present disclosure. Figure 4B yes Figure 4A A schematic enlarged view of a region R' of the retaining wall structure 100 in FIG. Figure 4A and Figure 4B The retaining wall structure 100 may be a closed loop structure having a plurality of through-channels CH. In some embodiments, each through-channel CH penetrates the retaining wall structure 100 to connect the inner surface 100a and the outer surface 100b of the retaining wall structure 100. Figure 4A The retaining wall structure 100 is shown as a square loop, but the present disclosure is not limited thereto. The retaining wall structure 100 may be a loop structure of other geometric shapes, such as a polygonal loop or a circular loop. In some embodiments, the retaining wall structure 100 has a uniform thickness T of 50 μm to 500 μm. 100 For example, the thickness T of the retaining wall structure 100 between the inner surface 100a and the outer surface 100b is 100 In some embodiments, the height H of the retaining wall structure 100 in the z-axis direction may be the same as that in the y-axis direction. 100 (maximum height).

[0084] In some embodiments, the through channel CH may be a semi-cylindrical through channel, such as Figure 4A and Figure 4B As shown. However, the present disclosure is not limited thereto. In some alternative embodiments, the through-channel CH may be a polygonal column-shaped through-channel or a cylindrical through-channel. In some embodiments, each through-channel CH may have a width d3 (in the case of a polygonal column-shaped through-channel) or a diameter (in the case of a semi-cylindrical through-channel or a cylindrical through-channel) between 30 μm and 1000 μm in the x-axis direction. On the other hand, each through-channel CH has a height H of 15 μm to 500 μm in the z-axis direction.CH In other words, the height H of the through channel CH CH The height H of the retaining wall structure 100 100 The ratio between is in the range of 1:67 to 10:1. In some embodiments, the spacing d4 between two adjacent through-channels CH may be in the range of 30 μm to 940 μm. In some embodiments, there is no particular limitation on the relationship between the width (or diameter) d3 of the through-channel CH and the spacing d4 between two adjacent through-channels CH. In some embodiments, the width (or diameter) d3 may be greater than the spacing d4. However, it does not constitute a limitation in the present disclosure. In some alternative embodiments, the width (or diameter) d3 may be equal to or less than the spacing d4.

[0085] It should be noted that in Figure 4B In the embodiment, the through channel CH is shown as being located at the bottom of the retaining wall structure 100, so that the bottom surface of the retaining wall structure 100 is interrupted by the through channel CH. However, the present disclosure is not limited thereto. The through channel CH may be located at other positions of the retaining wall structure 100. Figure 4C is a schematic enlarged view of a region R' of a retaining wall structure 100 according to some alternative embodiments of the present disclosure. Figure 4C , the cylindrical through channel CH is located in the middle of the retaining wall structure 100. In other words, the through channel CH is separated from both the top surface 100c and the bottom surface 100d of the retaining wall structure 100. Figure 4C The through channel CH and the retaining wall structure 100 may have the same Figure 4B The through channel CH shown in FIG. 1 has the same size as the retaining wall structure 100 , and thus a detailed description thereof is omitted here.

[0086] Reference again Figure 4A Although the through-channel CH is shown as being located on two opposite side walls of the retaining wall structure 100, the present disclosure is not limited thereto. In some alternative embodiments, the through-channel CH may be located on two adjacent side walls of the retaining wall structure 100. In some alternative embodiments, the through-channel CH may be located on one side wall, three side walls, or four side walls of the retaining wall structure 100.

[0087] refer to Figure 2F, a plurality of conductive structures 200 adjacent to the retaining wall structure 100 are formed on the stripping layer DB. In some embodiments, the method for forming the conductive structure 200 includes the following steps. First, a first photoresist layer (not shown) is provided on the retaining wall structure 100 to protect the retaining wall structure 100. Afterwards, a seed material layer (not shown) is formed on the stripping layer DB and the first photoresist layer. In some embodiments, the seed material layer includes a titanium / copper composite layer formed by a sputtering process. Subsequently, a second photoresist layer (not shown) having an opening is formed on the seed material layer. The opening of the second photoresist layer exposes the expected position of the conductive structure 200 formed subsequently. Afterwards, an electroplating process is performed to form a metal material layer (e.g., a copper layer) on the seed material layer exposed by the opening of the second photoresist layer. Then, the second photoresist layer and the seed material layer below it are removed to form the conductive structure 200. Afterwards, the first photoresist layer is also removed. The foregoing method is merely an exemplary description of the manufacturing method of the conductive structure 200, and the present disclosure is not limited thereto. In some alternative embodiments, the conductive structure 200 and the retaining wall structure 100 may share a common Figure 2A For example, after forming the sintered portion 120b and removing the unsintered portion 120a (eg, Figure 2D ), the conductive structure 200 can be formed by a method similar to the above process before removing the seed material layer 110. In some alternative embodiments, the conductive structure 200 can be formed by picking up a pre-fabricated conductive structure and placing it on the peeling layer DB. In some alternative embodiments, the conductive structure 200 can be formed simultaneously with the retaining wall structure 100 by the same three-dimensional printing process.

[0088] like Figures 2D to 2F As shown, the retaining wall structure 100 is formed before the conductive structure 200 is formed. However, the present disclosure is not limited thereto. In some alternative embodiments, the step of forming the conductive structure 200 may be before the step of forming the retaining wall structure 100. In this case, the conductive structure 200 and the retaining wall structure 100 may share a common Figure 2A For example, after forming the seed material layer 110 (eg Figure 2AAs shown, a photoresist layer (not shown) having an opening is formed on the seed material layer 110. The opening of the photoresist layer exposes the expected position of the conductive structure 200 to be formed subsequently. Afterwards, an electroplating process is performed to form a metal material layer (e.g., a copper layer) on the seed material layer 110 exposed by the opening of the photoresist layer. Then, the photoresist layer is removed to obtain a plurality of metal patterns (not shown) standing on the seed material layer 110. The metal patterns and the portion of the seed material layer 110 located below the metal patterns can then constitute the conductive structure 200. Subsequently, while the peeling layer DB is still blanketly covered with the seed material layer 110, a stripping process is performed. FIG. 2B to FIG. 2D Afterwards, the seed material layer 110 not covered by the sintered portion 120 b and the metal pattern is removed to form the conductive structure 200 and the barrier wall structure 100 .

[0089] In some embodiments, the conductive structure 200 is formed to have substantially the same height as the retaining wall structure 100 . However, the present disclosure is not limited thereto. In some alternative embodiments, the conductive structure 200 may be shorter or taller than the retaining wall structure 100 .

[0090] Reference Figure 2G , a first tube core 300 is formed on the peeling layer DB. The first tube core 300 is surrounded by both the retaining wall structure 100 and the conductive structure 200. In some embodiments, the conductive structure 200 is disposed inside the retaining wall structure 100, so that the conductive structure 200 is located between the retaining wall structure 100 and the first tube core 300 (e.g. Figure 2G In some alternative embodiments, the conductive structure 200 is located outside the retaining wall structure 100 , so that the retaining wall structure 100 is located between the first tube core 300 and the conductive structure 200 .

[0091] In some embodiments, the first tube core 300 is picked up and placed on the stripping layer DB. The first tube core 300, for example, includes a semiconductor substrate 310, a plurality of conductive pads 320, a passivation layer 330, a post-passivation layer 340, a plurality of conductive vias 350 and a protective layer 360. In some embodiments, the conductive pad 320 is disposed on the semiconductor substrate 310. The passivation layer 330 is formed on the semiconductor substrate 310 and has a contact opening that partially exposes the conductive pad 320. The semiconductor substrate 310 may be a silicon substrate, which includes active components (e.g., transistors, etc.) and passive components (e.g., resistors, capacitors, inductors, etc.) formed in the silicon substrate. The conductive pad 320 may be an aluminum pad, a copper pad or other suitable metal pad. The passivation layer 330 may be a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or a dielectric layer formed by other suitable dielectric materials. In addition, the post-passivation layer 340 is formed on the passivation layer 330. The rear passivation layer 340 covers the passivation layer 330 and has a plurality of contact openings. The conductive pad 320 is partially exposed by the contact openings of the rear passivation layer 340. The rear passivation layer 340 may be a dielectric layer formed of a polyimide (PI) layer, a polybenzooxazole (PBO) layer, or other suitable polymers. In addition, a conductive via 350 is formed on the conductive pad 320. In some embodiments, the conductive via 350 is plated on the conductive pad 320. A protective layer 360 is formed on the rear passivation layer 340 to cover the conductive via 350.

[0092] like Figure 2G As shown, the first die 300 has a rear surface 300a and a front surface 300b opposite to the rear surface 300a. In some embodiments, the rear surface 300a of the first die 300 is attached (or adhered) to the peeling layer DB through an adhesive layer AD. In some embodiments, the adhesive layer AD may include a die attach film (DAF). On the other hand, the front surface 300b of the first die 300 faces upward. Figure 2G As shown, the top surface (front surface 300b) of the first tube core 300 is lower than the top surface of the conductive structure 200 and the top surface of the retaining wall structure 100. However, the present disclosure is not limited thereto. In some alternative embodiments, the top surface of the first tube core 300 can be substantially coplanar with the top surface of the conductive structure 200 and / or the top surface of the retaining wall structure 100.

[0093] Reference Figure 2H, an encapsulation material 400 is formed on the peeling layer DB to encapsulate the retaining wall structure 100, the conductive structure 200 and the first tube core 300. In some embodiments, the encapsulation material 400 is a molding compound, a molding underfill, a resin (such as an epoxy resin), etc. The encapsulation material 400 can be formed by a molding process (such as a compression molding process). In some embodiments, the encapsulation material 400 is applied on the carrier C and the peeling layer DB. As described above, since the retaining wall structure 100 has at least one through channel CH connecting the inner surface 100a and the outer surface 100b of the retaining wall structure 100, the encapsulation material 400 can flow into the interior of the retaining wall structure 100 through the through channel CH, thereby encapsulating the first tube core 300 and the conductive structure 200.

[0094] Reference Figure 2H and Fig.2I , grinding the encapsulation material 400 and the protection layer 360 of the first tube core 300 until the top surface of the conductive through hole 350 is exposed. After grinding the encapsulation material 400, an encapsulation body 400a is formed on the peeling layer DB to encapsulate the first tube core 300, the retaining wall structure 100 and the conductive structure 200. In some embodiments, the encapsulation body 400a fills the through channel CH of the retaining wall structure 100. That is, at least a portion of the encapsulation body 400a is located between the inner surface 100a and the outer surface 100b of the retaining wall structure 100 and penetrates the retaining wall structure 100. In some embodiments, the portion of the encapsulation body 400a that penetrates the retaining wall structure 100 may have the same geometric shape as the through channel CH of the retaining wall structure 100. For example, as described above, in some embodiments, the through channel CH may be a semi-cylindrical through channel, a cylindrical through channel, or a polygonal cylindrical through channel. Therefore, in some embodiments, the portion of the enclosure 400a that penetrates the retaining wall structure 100 may be a semi-cylinder, a cylinder, or a polygonal cylinder. In some embodiments, the portion of the enclosure 400a that penetrates the retaining wall structure 100 may have the same width (in the case of a polygonal cylinder), diameter (in the case of a semi-cylinder or a cylinder), and / or height as the through-channel CH. For example, the portion of the enclosure 400a that penetrates the retaining wall structure 100 may have a width of 30 μm to 1000 μm in the x-axis direction (which may correspond to Figure 4B d3) or diameter and has a height of 15 μm to 500 μm in the z-axis direction (corresponding to Figure 4B The height H shown in CH In some embodiments, the height of the portion of the enclosure 400a that passes through the retaining wall structure 100 (which may correspond to Figure 4B Height H shown CH) and the height H of the retaining wall structure 100 100 (like Figure 4B In some embodiments, when the through channel CH is separated from both the top surface 100c and the bottom surface 100d of the retaining wall structure 100 (as shown in FIG. Figure 4C As shown in FIG. 1 , the portion of the enclosure 400a that passes through the retaining wall structure 100 is also separated from the top surface 100c and the bottom surface 100d of the retaining wall structure 100.

[0095] The through channel CH of the retaining wall structure 100 provides a channel for the encapsulation material 400, so that the encapsulation material 400 can be uniformly filled into the interior of the retaining wall structure 100, thereby ensuring the encapsulation reliability of the encapsulation body 400a. In some embodiments, the encapsulation material 400 is polished by a mechanical polishing process and / or a chemical mechanical polishing (CMP) process. In some embodiments, during the polishing process of the encapsulation material 400, the protective layer 360 is polished to reveal the conductive via 350. In some embodiments, some parts of the conductive via 350, some parts of the conductive structure 200, and some parts of the retaining wall structure 100 are also slightly polished. After polishing, the first tube core 300 has an active surface 300c and a rear surface 300a opposite to the active surface 300c. The exposed portion of the conductive via 350 is located on the active surface 300c of the first tube core 300. It is worth noting that the top surface of the conductive structure 200 , the top surface of the retaining wall structure 100 , the top surface of the protection layer 360 , and the top surface of the conductive via 350 are substantially coplanar with the top surface of the encapsulation body 400 a .

[0096] Reference Figure 2JA rewiring structure 500 electrically connected to the conductive via 350 of the first tube core 300, the conductive structure 200 and the retaining wall structure 100 is formed on the top surface of the conductive structure 200, the top surface of the encapsulation body 400a, the top surface of the retaining wall structure 100, the top surface of the conductive via 350 and the top surface of the protective layer 360. In other words, the rewiring structure 500 is formed on the active surface 300c of the first tube core 300. In some embodiments, the rewiring structure 500 includes a plurality of interlayer dielectric layers 500a and a plurality of rewiring conductive layers 500b that are alternately stacked. The rewiring conductive layer 500b is electrically connected to the conductive via 350 of the tube core 300. At the same time, the rewiring conductive layer 500b is also electrically connected to the conductive structure 200 and the retaining wall structure 100 embedded in the encapsulation body 400a. In some embodiments, the top surface of the conductive via 350, the top surface of the conductive structure 200, and the top surface of the retaining wall structure 100 contact the bottommost redistribution conductive layer 500b of the redistribution structure 500. In some embodiments, the top surface of the conductive via 350, the top surface of the conductive structure 200, and the top surface of the retaining wall structure 100 are partially covered by the bottommost interlayer dielectric layer 500a. Figure 2J As shown, the topmost redistribution conductive layer 500b includes a plurality of pads. In some embodiments, the pads include a plurality of under-ball metallurgy (UBM) patterns for ball mounting. It is worth noting that the number of interlayer dielectric layers 500a and redistribution conductive layers 500b is not limited in the present disclosure. Although not shown, it should be understood that the redistribution structure 500 also has a plurality of pads. Figure 1 The second die 300 ′ and the third die 300 ″ are shown to be electrically connected.

[0097] refer to Figure 2K After forming the redistribution structure 500, a plurality of conductive terminals 600 are placed on the topmost redistribution conductive layer 500b (UBM pattern). In some embodiments, the conductive terminals 600 include solder balls. In some embodiments, the conductive terminals 600 can be placed on the UBM pattern by a ball placement process.

[0098] Reference Figure 2K and Figure 2L After forming the conductive terminal 600 on the redistribution structure 500, the encapsulation body 400a, the retaining wall structure 100, the conductive structure 200 and the adhesive layer AD are peeled off from the peeling layer DB to remove the carrier C and the peeling layer DB. In some embodiments, the peeling layer DB (e.g., the photothermal conversion release layer) can be irradiated by ultraviolet (UV) laser so that the carrier C and the peeling layer DB can be peeled off. Thereafter, the structure is turned over.

[0099] Reference Figure 2M , a chip 700 is disposed on the conductive structure 200 relative to the rewiring structure 500. In some embodiments, the chip 700 is disposed on the conductive structure 200 through a conductive connection 702. In some embodiments, the conductive connection 702 may include a solder ball. The chip 700 may include an internal memory chip (e.g., a DRAM, SRAM, NVRAM, and / or similar internal memory chip) or a logic chip. The chip 700 may be electrically connected to the first die 300 through the conductive connection 702, the conductive structure 200, and the rewiring conductive layer 500b of the rewiring structure 500 in sequence.

[0100] After the chip 700 is disposed on the conductive structure 200, a cover 800 is formed to cover the chip 700. For example, the cover 800 can be disposed on the encapsulation body 400a opposite to the redistribution structure 500. In some embodiments, the cover 800 is made of a conductive material. The cover 800 may include the same material as the retaining wall structure 100 or the cover 800 may include a material different from the retaining wall structure 100. For example, the material of the cover 800 may include copper, stainless steel, solder, gold, nickel iron (NiFe), nickel iron chromium (NiFeCr), alloys thereof, combinations thereof, or any other suitable conductive material. In some embodiments, the cover 800 is formed to accommodate the chip 700. For example, as Figure 2M As shown, the cover 800 may present a U-shape that is turned upside down in the cross-sectional view. In some embodiments, the cover 800 is electrically and physically connected to the retaining wall structure 100. For example, the retaining wall structure 100 and the cover 800 may be electrically grounded. Since the retaining wall structure 100 and the cover 800 together form a wall surrounding the first tube core 300 and the chip 700, the retaining wall structure 100 and the cover 800 may be used together as an EMI shielding structure for the first tube core 300 and the chip 700. At the same time, since the retaining wall structure 100 and the cover 800 are made of conductive materials, the retaining wall structure 100 and the cover 800 may also be suitable as a heat dissipation structure. In other words, the heat generated by the first tube core 300 and the chip 700 during operation can be dissipated into the atmosphere through the path generated by the retaining wall structure 100 and the cover 800. With the help of the retaining wall structure 100 and the cover 800, the reliability of the package 10 can be fully improved.

[0101] Figure 5 is a schematic cross-sectional view of a region R of a package body 10 according to some alternative embodiments of the present disclosure. Figure 5 The structure shown is Figure 2M The structures shown are similar, so similar components are represented by the same reference numerals and their detailed description is omitted here. Figure 5In some embodiments, the conductive structure 200 is disposed outside the retaining wall structure 100, so that the retaining wall structure 100 is located between the first tube core 300 and the conductive structure 200. Figure 5 As shown, the cover 800 is attached to the retaining wall structure 100, the encapsulation body 400a and the adhesive layer AD. In some embodiments, the cover 800 is electrically and physically connected to the retaining wall structure 100. For example, the retaining wall structure 100 and the cover 800 can be electrically grounded. Since the retaining wall structure 100 and the cover 800 together form a wall surrounding the first tube core 300, the retaining wall structure 100 and the cover 800 can be used together as an EMI shielding structure for the first tube core 300. Accordingly, the reliability of the package 10 can be fully enhanced.

[0102] In some embodiments, a plurality of conductive patches 900 are formed on the conductive structure 200. For example, the conductive patch 900 can be formed by photolithography and etching processes. In some embodiments, the material of the conductive patch 900 includes aluminum, titanium, copper, nickel, tungsten and / or alloys thereof. In some embodiments, the radio frequency (RF) signal from the first die 300 can be sequentially transmitted to the conductive patch 900 through the redistribution conductive layer 500b and the conductive structure 200. Accordingly, the conductive patch 900 can be used as a patch antenna.

[0103] Figure 6 is a schematic cross-sectional view of a region R of a package body 10 according to some alternative embodiments of the present disclosure. Figure 6 The structure shown is Figure 2M The structures shown are similar, so similar components are represented by the same reference numerals and their detailed description is omitted here. Figure 6 In one embodiment, a plurality of conductive sheets 900 are formed on the conductive structure 200, the encapsulation body 400a and the adhesive layer AD. The conductive sheet 900 may be composed of a plurality of first conductive sheets 900a and a plurality of second conductive sheets 900b. The first conductive sheet 900a is physically and electrically connected to the conductive structure 200, while the second conductive sheet 900b is physically isolated from the conductive structure 200. For example, the conductive sheet 900 may be formed by photolithography and etching processes. In some embodiments, the material of the conductive sheet 900 includes aluminum, titanium, copper, nickel, tungsten and / or alloys thereof. In some embodiments, a radio frequency (RF) signal from the first die 300 may be sequentially transmitted to the first conductive sheet 900a through the redistribution conductive layer 500b and the conductive structure 200. Thereafter, the signal may be electrically coupled horizontally from the first conductive sheet 900a to the second conductive sheet 900b. Accordingly, the conductive sheet 900 may be used as a patch antenna.

[0104] In some embodiments, the retaining wall structure 100 can receive the RF signal from the first tube core 300 through the redistribution conductive layer 500b. Accordingly, the retaining wall structure 100 can act as one of the electrodes of a dipole antenna. In other words, the retaining wall structure 100 can couple with other conductive components embedded in the encapsulation body 400a to transmit RF signals.

[0105] According to some embodiments of the present invention, the package includes a plurality of tube cores, a retaining wall structure, a plurality of conductive structures, an encapsulation body and a rewiring structure. The retaining wall structure surrounds at least one of the tube cores. The retaining wall structure has an inner surface facing the at least one tube core and an outer surface opposite to the inner surface. The conductive structure surrounds the at least one tube core. The encapsulation body encapsulates the tube core, the retaining wall structure and the conductive structure. At least a portion of the encapsulation body is located between the inner surface and the outer surface of the retaining wall structure and penetrates the retaining wall structure. The rewiring structure is disposed on the encapsulation body. The rewiring structure is electrically connected to the tube core and the conductive structure.

[0106] According to some embodiments of the present invention, the material of the retaining wall structure includes copper, stainless steel, solder, gold, nickel iron (NiFe), nickel iron chromium (NiFeCr), alloys thereof, or combinations thereof.

[0107] According to some embodiments of the present invention, the retaining wall structure has a height between 50 μm and 1000 μm and a thickness between 50 μm and 500 μm.

[0108] According to some embodiments of the present invention, at least a portion of the encapsulation includes a semi-cylinder, a cylinder or a polygonal cylinder, and a width or a diameter of at least a portion of the encapsulation is in a range from 30 μm to 1000 μm.

[0109] According to some embodiments of the present invention, at least a portion of the enclosure is spaced apart from a top surface and a bottom surface of the retaining wall structure.

[0110] According to some embodiments of the present invention, a ratio between a height of at least a portion of the enclosure and a height of the retaining wall structure is in a range from 1:67 to 10:1.

[0111] According to some embodiments of the present invention, the package further includes a cover, which is disposed on the package relative to the redistribution structure, and the cover is connected to the retaining wall structure.

[0112] According to some embodiments of the present invention, the package further includes a plurality of conductive patches disposed on the package and the conductive structure, and at least a portion of the conductive patches is electrically connected to the conductive structure.

[0113] According to some embodiments of the present invention, the package includes a plurality of tube cores, a retaining wall structure, a plurality of conductive structures, an encapsulation body and a rewiring structure. The retaining wall structure surrounds at least one of the tube cores. The retaining wall structure includes a framed portion and a staggered portion connected to the frame portion. The staggered portion includes a plurality of main body portions and a plurality of bridge portions. The main body portions are separated from each other and connected by corresponding bridge portions. The height of the bridge portion is less than the height of the main body portion. The top surface of the main body portion is coplanar with the top surface of the bridge portion. The conductive structure surrounds the at least one tube core. The encapsulation body encapsulates the tube core, the retaining wall structure and the conductive structure. The rewiring structure is disposed on the encapsulation body. The rewiring structure is electrically connected to the tube core and the conductive structure.

[0114] According to some embodiments of the present invention, the material of the retaining wall structure includes copper, stainless steel, solder, gold, nickel iron (NiFe), nickel iron chromium (NiFeCr), alloys thereof, or combinations thereof.

[0115] According to some embodiments of the present invention, the retaining wall structure has a height between 50 μm and 1000 μm and a thickness between 50 μm and 500 μm.

[0116] According to some embodiments of the present invention, the main body portions are parallel to each other, and the bridge portion is perpendicular to the main body portions.

[0117] According to some embodiments of the present invention, a distance between two adjacent main body portions is in a range of 30 μm to 1000 μm, and a ratio between the height of the main body portion and the height of the bridge portion is in a range of 1:19 to 33:1.

[0118] According to some embodiments of the present invention, the package further includes a cover, which is disposed on the package relative to the redistribution structure, and the cover is connected to the retaining wall structure.

[0119] According to some embodiments of the present invention, the package further includes a plurality of conductive sheets disposed on the package and the conductive structure, and at least a portion of the conductive sheets is electrically connected to the conductive structure.

[0120] According to some embodiments of the present invention, a method for manufacturing a package includes at least the following steps. A carrier is provided. A retaining wall structure and a plurality of conductive structures are formed on the carrier. The conductive structure is adjacent to the retaining wall structure. The retaining wall structure is formed by a three-dimensional printing process. The retaining wall structure includes at least one through channel passing through the retaining wall structure. A tube core is placed on the carrier. The retaining wall structure and the conductive structure surround the tube core. An encapsulation material is applied on the carrier so that the encapsulation material flows through the through channel to form an encapsulation body. The encapsulation body fills the through channel and encapsulates the retaining wall structure, the tube core and the conductive structure. A rewiring structure is formed on the packaging body. The rewiring structure is electrically connected to the tube core.

[0121] According to some embodiments of the present invention, the step of forming the retaining wall structure on the carrier includes at least the following steps: forming a seed material layer on the carrier; depositing a precursor powder layer on the seed material layer; sintering a portion of the precursor powder layer using a laser beam; and removing an unsintered portion of the precursor powder layer and the seed material layer located below the unsintered portion of the precursor powder layer to form the retaining wall structure.

[0122] According to some embodiments of the present invention, the method further includes forming a plurality of conductive terminals on the redistribution structure.

[0123] According to some embodiments of the present invention, the method further includes forming a cover on the enclosure at a position opposite to the redistribution structure, and the cover is connected to the retaining wall structure.

[0124] According to some embodiments of the present invention, the method further includes forming a plurality of conductive sheets on the encapsulation body and the conductive structure, and at least a portion of the conductive sheets is electrically connected to the conductive structure.

[0125] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art should know that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and they can make various changes, substitutions and modifications to them without departing from the spirit and scope of the present disclosure.

Claims

1. A package, characterized in that: include: Multiple dies; a retaining wall structure surrounding at least one of the plurality of tube cores, wherein the retaining wall structure has an inner surface facing the at least one tube core of the plurality of tube cores and an outer surface opposite to the inner surface; a plurality of conductive structures surrounding the at least one die of the plurality of dies; An encapsulation body encapsulating the plurality of tube cores, the retaining wall structure and the plurality of conductive structures, wherein at least a portion of the encapsulation body is located between the inner surface and the outer surface of the retaining wall structure, connecting the inner surface and the outer surface of the retaining wall structure and penetrating the retaining wall structure; as well as A redistribution structure is disposed on the encapsulation body, wherein the redistribution structure is electrically connected to the plurality of dies and the plurality of conductive structures. 2 . The package according to claim 1 , wherein a material of the retaining wall structure comprises copper, stainless steel, solder, gold, nickel-iron, nickel-iron-chromium, alloys thereof, or a combination thereof. 3 . The package according to claim 1 , wherein the retaining wall structure has a height ranging from 50 μm to 1000 μm and a thickness ranging from 50 μm to 500 μm. 4 . The package according to claim 1 , wherein the at least a portion of the encapsulation body comprises a semi-cylinder, a cylinder or a polygonal column, and a width or a diameter of the at least a portion of the encapsulation body is in a range of 30 μm to 1000 μm. 5 . The package according to claim 1 , wherein the at least a portion of the encapsulation body is spaced apart from a top surface and a bottom surface of the retaining wall structure. 6 . The package according to claim 1 , wherein a ratio between a height of the at least a portion of the encapsulation and a height of the retaining wall structure is in a range of 1:67 to 10:

1. 7 . The package body according to claim 1 , further comprising a cover body, wherein the cover body is disposed on the encapsulation body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure. 8 . The package according to claim 1 , further comprising a plurality of conductive sheets on the package and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

9. A package, characterized in that: include: Multiple dies; a retaining wall structure surrounding at least one of the plurality of tube cores, wherein the retaining wall structure comprises a frame portion and an interlaced portion connected to the frame portion, the interlaced portion comprises a plurality of main body portions and a plurality of bridge portions, the plurality of main body portions are separated from each other and connected by corresponding bridge portions, the height of the plurality of bridge portions is smaller than the height of the plurality of main body portions, and the top surfaces of the plurality of main body portions are coplanar with the top surfaces of the plurality of bridge portions, wherein the retaining wall structure has an inner surface facing the at least one tube core of the plurality of tube cores and an outer surface opposite to the inner surface; a plurality of conductive structures surrounding the at least one die of the plurality of dies; An encapsulation body encapsulating the plurality of tube cores, the retaining wall structure and the plurality of conductive structures, wherein at least a portion of the encapsulation body is located between the inner surface and the outer surface of the retaining wall structure, connecting the inner surface and the outer surface of the retaining wall structure and penetrating the retaining wall structure; as well as A redistribution structure is disposed on the encapsulation body, wherein the redistribution structure is electrically connected to the plurality of dies and the plurality of conductive structures. 10 . The package body according to claim 9 , wherein the material of the retaining wall structure comprises copper, stainless steel, solder, gold, nickel-iron, nickel-iron-chromium, alloys thereof or combinations thereof. 11 . The package according to claim 9 , wherein the retaining wall structure has a height ranging from 50 μm to 1000 μm and a thickness ranging from 50 μm to 500 μm. 12 . The package body according to claim 9 , wherein the plurality of main body portions are parallel to each other, and the plurality of bridge portions are perpendicular to the plurality of main body portions. 13 . The package according to claim 9 , wherein a distance between two adjacent main body portions is in a range of 30 μm to 1000 μm, and a ratio between the height of the main body portion and the height of the bridge portion is in a range of 1:19 to 33:

1. 14 . The package body according to claim 9 , further comprising a cover body, wherein the cover body is disposed on the encapsulation body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure. 15 . The package according to claim 9 , further comprising a plurality of conductive sheets disposed on the encapsulation body and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

16. A method for manufacturing a package, characterized in that: include: Provide carrier board; forming a retaining wall structure and a plurality of conductive structures on the carrier, wherein the plurality of conductive structures are adjacent to the retaining wall structure, the retaining wall structure is formed by a three-dimensional printing process, and the retaining wall structure includes at least one through-channel passing through the retaining wall structure; Placing a tube die on the carrier, wherein the retaining wall structure and the plurality of conductive structures surround the tube die, wherein the retaining wall structure has an inner surface facing the tube die and an outer surface opposite to the inner surface, and the at least one through channel communicates the inner surface and the outer surface of the retaining wall structure; Applying an encapsulation material on the carrier so that the encapsulation material flows through the at least one through-channel to form an encapsulation body, wherein the encapsulation body fills the at least one through-channel and encapsulates the retaining wall structure, the tube die and the plurality of conductive structures; as well as A redistribution structure is formed on the encapsulation body, wherein the redistribution structure is electrically connected to the die.

17. The method for manufacturing a package according to claim 16, wherein the step of forming the retaining wall structure on the carrier comprises: forming a seed material layer on the carrier; depositing a precursor powder layer on the seed material layer; Sintering a portion of the precursor powder layer using a laser beam; as well as The unsintered portion of the precursor powder layer and the seed material layer below the unsintered portion of the precursor powder layer are removed to form the retaining wall structure.

18. The method for manufacturing a package according to claim 16, further comprising: A plurality of conductive terminals are formed on the redistribution structure.

19. The method for manufacturing a package according to claim 16, further comprising: A cover body is formed on the enclosure body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure.

20. The method for manufacturing a package according to claim 16, further comprising: A plurality of conductive sheets are formed on the encapsulation body and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

21. A package, characterized in that: include: Multiple dies; a retaining wall structure surrounding at least one of the plurality of tube cores, wherein the retaining wall structure has an inner surface facing the at least one tube core of the plurality of tube cores and an outer surface opposite to the inner surface; An encapsulation body encapsulating the plurality of tube cores and the retaining wall structure, wherein a first portion of the encapsulation body penetrates the retaining wall structure, is located between the inner surface and the outer surface of the retaining wall structure, and communicates with the inner surface and the outer surface of the retaining wall structure; as well as A redistribution structure is disposed on the encapsulation body, wherein the redistribution structure is electrically connected to the plurality of tube cores and the retaining wall structure. 22 . The package according to claim 21 , wherein a material of the retaining wall structure comprises copper, stainless steel, solder, gold, nickel-iron, nickel-iron-chromium, alloys thereof, or combinations thereof.

23. The package of claim 21, wherein the first portion of the encapsulation is in direct contact with at least a portion of a bottom surface of the retaining wall structure.

24. The package of claim 21, wherein the first portion of the encapsulation comprises a semi-cylinder, a cylinder, or a polygonal cylinder.

25. The package of claim 21, wherein the first portion of the encapsulation is spaced apart from a top surface and a bottom surface of the retaining wall structure.

26. The package of claim 21, wherein the encapsulation further comprises a second portion in contact with the inner surface and a third portion in contact with the outer surface, and the second portion of the encapsulation is connected to the third portion of the encapsulation through the first portion of the encapsulation.

27. The package body according to claim 21, further comprising a cover body, wherein the cover body is disposed on the encapsulation body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure.

28. The package according to claim 21, further comprising: A plurality of conductive structures embedded in the encapsulation body; as well as A plurality of conductive sheets are disposed on the package and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

29. A package, characterized in that: include: Multiple dies; a retaining wall structure surrounding at least one of the plurality of tube cores, wherein the retaining wall structure comprises a frame portion and a staggered portion connected to the frame portion, wherein the retaining wall structure has an inner surface facing the at least one tube core of the plurality of tube cores and an outer surface opposite to the inner surface; An encapsulation body encapsulating the plurality of tube cores and the retaining wall structure, wherein a first portion of the encapsulation body penetrates the interlaced portion, is located between the inner surface and the outer surface of the retaining wall structure, and communicates with the inner surface and the outer surface of the retaining wall structure; as well as A redistribution structure is disposed on the encapsulation body, wherein the redistribution structure is electrically connected to the plurality of tube cores and the retaining wall structure. 30 . The package according to claim 29 , wherein the material of the retaining wall structure comprises copper, stainless steel, solder, gold, nickel-iron, nickel-iron-chromium, alloys thereof, or combinations thereof.

31. A package according to claim 29, wherein the encapsulation body further includes a second portion located inside the frame portion and a third portion located outside the frame portion, and the second portion of the encapsulation body is connected to the third portion of the encapsulation body through the first portion of the encapsulation body. 32 . The package body according to claim 29 , wherein the staggered portion comprises a plurality of main body portions and a plurality of bridge portions connecting two adjacent main body portions, the plurality of main body portions are parallel to each other, and the plurality of bridge portions are perpendicular to the plurality of main body portions. 33 . The package of claim 32 , wherein the first portion of the encapsulant is located between the plurality of body portions, and at least a portion of the first portion is located under the plurality of bridge portions.

34. The package body according to claim 29, further comprising a cover body, wherein the cover body is disposed on the encapsulation body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure.

35. The package of claim 29, further comprising: A plurality of conductive structures embedded in the encapsulation body; A plurality of conductive sheets are disposed on the package and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

36. A method for manufacturing a package, characterized in that: include: Provide carrier board; forming a retaining wall structure on the carrier plate by a three-dimensional printing process, wherein the retaining wall structure comprises at least one through channel connecting the inner surface and the outer surface of the retaining wall structure; placing a tube die on the carrier, wherein the inner surface of the retaining wall structure faces the tube die; Applying encapsulation material on the carrier and filling the encapsulation material into the at least one through channel to form an encapsulation body; as well as A redistribution structure is formed on the encapsulation body, wherein the redistribution structure is electrically connected to the die.

37. The method for manufacturing a package according to claim 36, wherein the step of forming the retaining wall structure on the carrier comprises: forming a seed material layer on the carrier; depositing a precursor powder layer on the seed material layer; Sintering a portion of the precursor powder layer using a laser beam; as well as The unsintered portion of the precursor powder layer and the seed material layer below the unsintered portion of the precursor powder layer are removed to form the retaining wall structure.

38. The method for manufacturing a package according to claim 36, further comprising: A cover body is formed on the enclosure body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure.

39. The method for manufacturing a package according to claim 36, further comprising: forming a plurality of conductive structures on the carrier, wherein the plurality of conductive structures are formed to be located between the tube core and the retaining wall structure; as well as A plurality of conductive sheets are formed on the encapsulation body and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures. 40 . The method for manufacturing a package according to claim 39 , wherein the retaining wall structure and the plurality of conductive structures are formed simultaneously.

41. A package, characterized in that: include: Multiple dies; a retaining wall structure surrounding at least one of the plurality of tube cores; An encapsulation body encapsulating the plurality of tube cores and the retaining wall structure, wherein the encapsulation body comprises a first portion, a second portion and a third portion, the first portion is surrounded by the retaining wall structure, the second portion surrounds the retaining wall structure, and the third portion connects the first portion and the second portion and penetrates the retaining wall structure; as well as A redistribution structure is disposed on the encapsulation body, wherein the redistribution structure is electrically connected to the plurality of tube cores and the retaining wall structure.

42. The package according to claim 41, wherein the material of the retaining wall structure comprises copper, stainless steel, solder, gold, nickel-iron, nickel-iron-chromium, alloys thereof, or combinations thereof.

43. The package of claim 41, wherein the third portion of the encapsulation is in direct contact with at least a portion of a bottom surface of the retaining wall structure.

44. The package of claim 41, wherein the third portion of the encapsulation comprises a semi-cylinder, a cylinder, or a polygonal cylinder.

45. The package of claim 41, wherein the third portion of the encapsulation is spaced apart from top and bottom surfaces of the retaining wall structure.

46. ​​The package of claim 41, wherein the retaining wall structure is sandwiched between the first portion of the enclosure and the second portion of the enclosure, and the third portion penetrates the retaining wall structure.

47. The package body according to claim 41, further comprising a cover body, wherein the cover body is arranged on the encapsulation body relative to the redistribution structure, wherein the cover body is connected to the retaining wall structure.

48. The package of claim 41 , further comprising: A plurality of conductive structures embedded in the encapsulation body; as well as A plurality of conductive sheets are disposed on the package and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

49. A package, characterized in that: include: Die; a retaining wall structure surrounding the tube core, wherein the retaining wall structure comprises a frame portion and a staggered portion connected to the frame portion, wherein the retaining wall structure has an inner surface facing the tube core and an outer surface opposite to the inner surface; as well as An encapsulation body encapsulates the tube core and the retaining wall structure, wherein a first portion of the encapsulation body is located below the staggered portion, connects the inner surface and the outer surface of the retaining wall structure, and is located between the inner surface and the outer surface of the retaining wall structure.

50. The package according to claim 49, wherein a material of the retaining wall structure comprises copper, stainless steel, solder, gold, nickel-iron, nickel-iron-chromium, alloys thereof, or combinations thereof.

51. A package according to claim 49, wherein the encapsulation body further includes a second portion located inside the frame portion and a third portion located outside the frame portion, and the second portion of the encapsulation body is connected to the third portion of the encapsulation body through the first portion of the encapsulation body.

52. The package body according to claim 49, wherein the staggered portion comprises a plurality of main body portions and a plurality of bridge portions connecting two adjacent main body portions, the plurality of main body portions are parallel to each other, and the plurality of bridge portions are perpendicular to the plurality of main body portions.

53. The package of claim 52, wherein the first portion of the encapsulation is located below the plurality of bridges.

54. The package body according to claim 49, further comprising a cover body, wherein the cover body is disposed on the enclosure, wherein the cover body is connected to the retaining wall structure.

55. The package of claim 49, further comprising: A plurality of conductive structures embedded in the encapsulation body; as well as A plurality of conductive sheets are disposed on the package and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures.

56. A method for manufacturing a package, characterized in that: include: Provide carrier board; forming a retaining wall structure on the carrier, wherein the retaining wall structure divides the space on the carrier into a first area surrounded by the retaining wall structure and a second area surrounding the retaining wall structure, and the retaining wall structure includes a hollow portion connecting the first area and the second area; placing a die in the first region on the carrier; Applying encapsulation material on the carrier plate and filling the encapsulation material into the hollow part of the retaining wall structure to form an encapsulation body, comprising: forming a first portion of the encapsulation in the first region; forming a second portion of the encapsulation in the second region; and forming a third portion of the enclosure in the hollow portion of the retaining wall structure to connect the first portion with the second portion; and A redistribution structure is formed on the encapsulation body, wherein the redistribution structure is electrically connected to the die.

57. The method for manufacturing a package according to claim 56, wherein the step of forming the retaining wall structure on the carrier comprises: forming a seed material layer on the carrier; depositing a precursor powder layer on the seed material layer; Sintering a portion of the precursor powder layer using a laser beam; as well as The unsintered portion of the precursor powder layer and the seed material layer below the unsintered portion of the precursor powder layer are removed to form the retaining wall structure.

58. The method for manufacturing a package according to claim 56, further comprising: A cover body is formed on the enclosure body opposite to the redistribution structure, wherein the cover body is connected to the retaining wall structure.

59. The method for manufacturing a package according to claim 56, further comprising: forming a plurality of conductive structures in the first region on the carrier, wherein the plurality of conductive structures are formed to be located between the die and the retaining wall structure; as well as A plurality of conductive sheets are formed on the encapsulation body and the plurality of conductive structures, wherein at least a portion of the plurality of conductive sheets is electrically connected to the plurality of conductive structures. 60 . The method for manufacturing a package according to claim 59 , wherein the retaining wall structure and the plurality of conductive structures are formed simultaneously.

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