Semiconductor device including a composite material clamp

Abstract

A semiconductor device includes: a first semiconductor die including a first surface, a second surface opposite the first surface, and a contact pad disposed on the first surface; another contact pad spaced apart from the semiconductor die; a clip including a first layer made of a first metal material and a second layer made of a second metal material different from the first metal material; wherein the first layer of the clip is connected to the contact pad, and the second layer of the clip is connected to the another contact pad.

Description

Field of the Invention

[0001] The present disclosure relates to semiconductor devices and to a process for connecting a clip to two different contact pads. Background Art

[0002] An important aspect of semiconductor device fabrication involves making interconnections, particularly between different semiconductor dies or between a semiconductor die and external leads. In this regard, clips or bonding wires are often used as intermediate connection elements. These intermediate connection elements are configured to establish an electrical connection between, for example, a contact pad of a semiconductor die and an external lead or between contact pads of different semiconductor dies. To achieve this, strong and stable connection links must be made on both sides of the interconnection.

[0003] To this end, problems can arise due to the fact that, for example, a clip designed to be used as an intermediate connection element is made of a material that may be different from the material of the contact pad of a semiconductor die or from the material of an external lead or from the material of the contact pad of another semiconductor die. In addition, the implementation of a soldering process often seems to be necessary for making the connection, but the fact is that the metallization layer of a particular contact pad is not solderable. The solution to all of these problems always requires a simple and cost-effective fabrication method.

[0004] In the case of power semiconductor devices, such as power semiconductor transistor devices, the problems described above become particularly important due to the high currents flowing through these devices and the high power consumption generated, as well as the thermal load on all of the device components and regions involved. Summary of the Invention

[0005] A first aspect of the present disclosure relates to a semiconductor device. The semiconductor device includes: a first semiconductor die including a first surface, a second surface opposite the first surface, and a contact pad disposed on the first surface; another contact pad spaced apart from the semiconductor die; a clip including a first layer made of a first metal material and a second layer made of a second metal material different from the first metal material; wherein the first layer of the clip is connected to the contact pad, and the second layer of the clip is connected to the other contact pad.

[0006] The clip having the above configuration can be referred to as a composite clip and is capable of being connected to different surface materials to obtain a stable and easily manufacturable interconnection. Specifically, such a composite clip allows for an interconnection solution that does not require a solderable contact pad of a semiconductor die or front side metallization of a semiconductor die. For example, the composite clip can be used in a semiconductor device to connect a first contact pad to an external lead. Additionally, the composite clip can be used in a system of a packaged product that (for example) contains two or more semiconductor dies having different front side metallizations of semiconductor dies. These and other possible applications will be outlined in more detail below.

[0007] In an embodiment of a semiconductor device according to a first aspect, the first and second layers of the clip are interconnected, in particular completely or directly interconnected with each other. According to an embodiment thereof, each of the first and second layers comprises the shape of an elongated strip, wherein two elongated strips are interconnected along their respective longitudinal surfaces. The thickness comprised by each of the elongated strips is defined as the extension between a first longitudinal surface and an opposite second longitudinal surface. The thicknesses of the elongated strips of the first and second layers can be equal to or different from each other.

[0008] In an embodiment of a semiconductor device according to a first aspect, the other contact portion is an external lead. According to another embodiment thereof, the clip comprises a horizontal portion and a bent portion, wherein the horizontal portion is at least partially disposed over the semiconductor die, and wherein the bent portion is at least partially disposed over the external lead. Specifically, the bent portion can be formed such that the bending angle can be in the range between 90° and 180°. For a clip having the shape described above, in the case of comprising two elongated connected strips, such a spatial configuration is obtained, wherein in the horizontal portion the first layer of the clip faces the contact pad, and in the bent portion the second layer faces the lead. In an embodiment of a semiconductor device according to a first aspect, the semiconductor device further comprises a die pad, wherein the semiconductor die is attached to the die pad with its second surface. According to another embodiment thereof, the external lead and the die pad are disposed in the same plane or in different planes. According to another embodiment thereof, the external lead and the die pad are part of the same lead frame.

[0009] In an embodiment of the semiconductor device according to the first aspect, the material of the contact pad is similar to or the same as the first metal material, and / or the material of the other contact pad is similar to or the same as the second metal material. For example, in the case where the other contact pad is an external lead, the external lead may be made of Cu, and the second layer of the clip may also be made of Cu, and the contact pad of the semiconductor die may be made of Al, and the second layer of the clip may also be made of Al.

[0010] In an embodiment of the semiconductor device according to the first aspect, the semiconductor device further includes a second semiconductor device including a first surface and a second surface opposite to the first surface, wherein the other contact pad is a contact pad provided on the second surface of the second semiconductor die. According to another embodiment thereof, the first layer of the clip includes an opening provided above the other contact pad of the second semiconductor die, wherein the second layer of the clip extends into the opening so as to contact the other contact pad of the second semiconductor die. According to another embodiment thereof, the semiconductor device includes a second die pad, wherein the second semiconductor die is attached to the second die pad with the second surface. According to another embodiment thereof, the first and second die pads may be provided in the same plane or different planes, and / or may be part of the same lead frame.

[0011] In an embodiment of the semiconductor device according to the first aspect, one or more of the first and second layers of the clip may be configured as a continuous layer or an uninterrupted layer, or one or more of them may be configured as a structured layer or a layer having one or more openings formed therein.

[0012] The second aspect of the present disclosure also relates to a semiconductor device. The semiconductor device according to the second aspect includes: a first surface, a second surface opposite to the first surface, and a contact pad provided on the first surface; a clip including a first layer made of a first metal material and a second layer made of a second material different from the first metal material; wherein the first layer of the clip is connected to the contact pad, and the second layer of the clip is exposed.

[0013] In an embodiment of the semiconductor device according to the second aspect, the second semiconductor device further includes a die pad, wherein the semiconductor die is attached to the die pad with its second surface.

[0014] According to an embodiment of the semiconductor device of the second aspect, the semiconductor device further includes external leads, wherein the first metal layer of the clip is connected to the external leads. According to another example thereof, the external leads and the die pads are disposed in the same plane, and / or the external leads and the die pads are parts of the same lead frame.

[0015] The semiconductor device according to the second aspect provides the possibility of implementing double-sided cooling. More specifically, the die pads can be exposed at the lower main surface of the semiconductor device, and the second layer of the clip can be exposed at the upper main surface of the semiconductor device, the upper main surface being opposite to the lower main surface. Heat sinks can be attached to both the upper main surface and the lower main surface of the semiconductor device, so that excessive heat generated by the semiconductor device can be dissipated through opposite sides of the semiconductor device. In such an embodiment, the second layer of the clip can include high thermal conductivity, especially can be made of a metallic material.

[0016] According to an embodiment of the semiconductor device of the second aspect, the second layer of the clip includes a metallic material, especially Al. This has the advantage that it is known that Al has robustness against corrosion, so that the exposed Al layer can be used to protect the semiconductor device from external influences.

[0017] According to an embodiment of the semiconductor device of the second aspect, the first layer of the clip includes a metallic material, especially Cu.

[0018] According to an embodiment of the semiconductor device of the second aspect, the second layer of the clip includes a non-metallic material, wherein the non-metallic material can be selected to achieve optimal properties regarding resistance to oxidation and / or corrosion and / or other external influences.

[0019] Other embodiments of the semiconductor device of the second aspect can be formed according to the embodiments of the first aspect, or can be formed by adding one or more features described in the embodiments further described below.

[0020] The third aspect of the present disclosure relates to a process for connecting a clip to two different contact pads, the process including providing a clip including a first metal layer made of a first metal material and a second metal layer made of a second metal material different from the first metal material, connecting the first metal layer to a first contact pad by a first connection process, and connecting the second metal layer to a second contact pad by a second connection process.

[0021] According to an embodiment of the process of the third aspect, the process is implemented such that any one of the semiconductor devices according to the first or second aspect is fabricated.

[0022] According to an embodiment of the process of the third aspect, the first metal material is Cu, and the second metal material is Al.

[0023] According to an embodiment of the process of the third aspect, the second connection process is similar to or equivalent to the first connection process. According to another embodiment thereof, both the first and second connection processes include ultrasonic welding.

[0024] According to an embodiment of the process of the third aspect, the second connection process is different from the first connection process.

[0025] Other embodiments of the process of the third aspect may be formed according to the embodiments of the semiconductor device of the first or second aspect, or may be formed by adding one or more features described in the embodiments of the semiconductor device further described below.

[0026] A fourth aspect of the present disclosure relates to a composite clip, which includes a first layer made of a first metal material and a second layer made of a second material different from the first metal material, wherein the clip includes a first horizontal portion and a second bent portion, and wherein the second bent portion is bent at an angle of at least 90° with respect to the first horizontal portion.

[0027] According to an embodiment of the composite clip of the fourth aspect, the angle at which the second bent portion is bent with respect to the first horizontal portion is in the range between 90° and 180°.

[0028] According to an embodiment of the composite clip of the fourth aspect, the first metal material is Cu, and the second material is a metal material, especially Al.

[0029] According to an embodiment of the composite clip of the fourth aspect, the second material is a non-metal material or a non-conductive material. Specifically, the second material may be a corrosion-resistant or oxidation-resistant material.

[0030] According to an embodiment of the composite clip of the fourth aspect, the clip is made by a rolling process, which is a metal forming process, wherein metal is passed through a pair or more pairs of rollers to reduce the thickness and make the thickness uniform. To manufacture the clip according to the fourth aspect, two different metals or materials are supplied to the rollers. Further forming or shaping steps may be performed on the clip later to generate a bent portion or a descending portion, etc.

[0031] Other embodiments of the composite clip of the fourth aspect may be formed according to the embodiments of the semiconductor device of the first or second aspect, or may be formed by adding one or more features described in the embodiments further described below. Description of the Drawings

[0032] The accompanying drawings are included to provide a further understanding of the various aspects and are incorporated into and form a part of this specification. The drawings illustrate the various aspects and, together with the description, are used to explain the principles of the various aspects. Many other aspects and many of the intended advantages of the various aspects will be readily appreciated as they become better understood by reference to the following detailed description. The elements in the drawings are not necessarily drawn to scale relative to each other. Like reference numerals may indicate corresponding like parts.

[0033] Figure 1 It includes part A and part B, and shows an example of a semiconductor device according to the first aspect in a longitudinal sectional view (A) along the chip length and a cross-sectional view (B), wherein, in this example, the second layer of the clip is connected to the external lead.

[0034] Figure 2 It includes part A and part B, and shows an example of a composite clip in a perspective view (A) and a cross-sectional side view (B), in which the clip includes a horizontal part and a bent part, and wherein the bent part is bent at an angle of 90° relative to the horizontal part.

[0035] Figure 3 It includes part A and part B, and shows an example of a composite clip in a first perspective view (A) and a second perspective view (B), in which the clip includes a horizontal part and a bent part, and wherein the bent part is bent at an angle of 180° relative to the horizontal part.

[0036] Figure 4 It includes part A and part B, and shows an example of a composite clip in a first perspective view (A) and a second perspective view (B), in which the clip includes a horizontal part and a bent part, and wherein the bent part is bent at an angle of 180° relative to the horizontal part, and wherein the second layer of the clip includes through holes for applying ultrasonic radiation to achieve ultrasonic welding.

[0037] Figure 5 It includes part A, part B and part C, and shows an example of a semiconductor device according to the first aspect in a longitudinal sectional view (A) along the chip length, a first cross-sectional view (B) through the semiconductor device along the plane of the first semiconductor die, and a second cross-sectional view (C) through the semiconductor device along the plane of the second semiconductor die. In this example, the semiconductor device includes two semiconductor dies, wherein the first layer of the clip is connected to the first semiconductor die, and the second layer of the clip is connected to the second semiconductor die.

[0038] Figure 6It includes part A and part B, and shows an example of a semiconductor device according to the second aspect in a longitudinal cross-sectional view (A) along the chip length and a cross-sectional view (B) through the semiconductor device in a plane of the semiconductor die. In this example, the second layer of the clip is exposed to the outside.

[0039] Figure 7 Shows a flowchart of an example of a process for connecting a clip to two different contact pads according to the third aspect. Detailed Description

[0040] In the following detailed description, reference will be made to the drawings which illustrate, by way of example, specific aspects in which the present disclosure may be practiced. In this regard, directional terms such as "top", "bottom", "front", "back" may be used with reference to the orientation of the drawings being described. Since the components of the devices described may be placed in many different orientations, the directional terms are used for illustrative purposes only and do not limit in any way. Other aspects may be adopted and structural or logical changes may be made without departing from the principles of the present disclosure. Therefore, the following detailed description should not be understood in a limiting sense, and the principles of the present disclosure are defined by the appended claims.

[0041] Figure 1 It includes part A and part B, and shows an example of a semiconductor device according to the first aspect. Figure 1 The semiconductor device 10 includes a semiconductor die 3 having a first surface, a second surface opposite to the first surface, and a contact pad 3A provided on the first surface, and an external lead 2 spaced apart from the semiconductor die 3. The semiconductor device 10 further includes a clip 4 including a first layer 4A made of a first metal material and a second layer 4B made of a second metal material different from the first metal material. The first layer 4A of the clip 4 is connected to the contact pad 3A, and the second layer 4B of the clip 4 is connected to the external lead 2.

[0042] The semiconductor device 10 may further include a die pad 1, wherein the semiconductor die 3 may be attached to the die pad 1 with its second surface. It may also be the case that, as Figure 1 shown, the external lead 2 and the die pad 1 are provided in the same plane, and in addition or alternatively, the external lead 2 and the die pad 1 are part of the same lead frame.

[0043] Figure 1 The semiconductor device 10 may further include a sealant 5 which encapsulates the semiconductor die 3, the die pad 1, the external lead 2, and the clip 4 as Figure 1 shown such that the external lead 2 and the die pad 1 are exposed with their respective lower surfaces.

[0044] The material of the contact pad 3A may be similar to or the same as the first metal material, and / or the material of the external lead 2 may be similar to or the same as the second metal material. Specifically, the situation may be that the material of the contact pad 3A is Al, and the first metal material of the first layer 4A of the clip 4 is also Al. In addition, the material of the external lead 2 may be Cu, and the second metal material of the second layer 4B of the clip 4 may also be Cu.

[0045] As can be seen from Figure 1 part A in, the clip 4 may include a horizontal portion 4.1 and a bent portion 4.2, wherein the horizontal portion 4.1 is at least partially disposed above the semiconductor die 3, and wherein the bent portion 4.2 is at least partially disposed above the external lead 2. In the bent portion 4.2, the clip 4 bends back at an angle of 180°, such that the second layer 4B faces the external lead 2, and the first layer 4A does not face the external lead 2.

[0046] The semiconductor die 3 may include contact pads on both the first surface and the second surface. Specifically, the semiconductor die 3 may include a vertical transistor (or diode) structure, for example, an insulated gate bipolar transistor (IGBT) including a source contact pad 3A disposed on the first surface and a drain contact pad (not shown) disposed on the second surface, wherein the drain contact pad is electrically connected to the die pad 1 via a solder layer 3B.

[0047] Figure 2 includes part A and part B, and shows an example of a composite clip according to the fourth aspect. As Figure 2 shown, the clip 14 includes a first lower layer 14A made of a first material and a second upper layer 14B made of a second material. The first layer 14A may include Al, and the second layer 14B may include Cu. Figure 2 The clip 14 of further includes a substantially horizontal portion 14.1 and a bent portion 14.2. The bent portion 14.2 bends downward at an angle of 90° with respect to the horizontal portion 14.1. Thus, the shape of the clip 14 is set such that the first layer 14A can be connected to the contact pad of the semiconductor die in the horizontal portion 14.1, and the lower end of the bent portion 14.2 can be connected to the external lead, wherein the contact pad of the semiconductor die and the external lead may be made of different materials. As Figure 2 shown in the example of, the horizontal portion 14.1 may further include a descending section 14.11, and the size and shape of the descending section may substantially correspond to the size and shape of the contact pad of the semiconductor die.

[0048] Figure 3 includes part A and part B, and shows an example of a composite clip according to the fourth aspect. Figure 3The collet 24 includes a first lower layer 24A and a second upper layer 24B, and these two layers can be made of different materials. The collet 24 further includes a substantially horizontal portion 24.1 and a bent portion 24.2. The bent portion 24.2 is bent back 180° relative to the horizontal portion 24.1. In addition, the bent portion 24.2 includes a lower end portion 24.21 having a laterally extending body. The horizontal portion 24.1 includes a descending section 24.11 designed to contact a contact pad of (for example) a semiconductor die.

[0049] Figure 4 Includes part A and part B, and shows an example of a collet according to the fourth aspect. As Figure 4 The shown collet 34 includes a first lower layer 34A and a second upper layer 34B, wherein the layers can be made of different materials. The collet 34 further includes a substantially horizontal portion 34.1 and a bent portion 34.2, wherein the bent portion 34.2 is bent 180° relative to the horizontal portion 34.1. The horizontal portion 34.1 further includes a descending section 34.11 designed to contact a contact pad of a semiconductor die. The collet 34 further includes a through hole 34.12 in a region of the horizontal portion 34.1 adjacent to the bent portion 34.2. The through hole 34.12 extends through the first layer 34A and the second layer 34B of the collet 34 and defines an area for ultrasonically welding the collet to a chip carrier.

[0050] Figure 5 Includes part A, part B and part C, and shows an example of a semiconductor device according to the first aspect. Figure 5 The semiconductor device 50 includes a first semiconductor die 53 including a first surface, a second surface opposite to the first surface, and a contact pad 53A provided on the first surface. The semiconductor device 50 further includes a second semiconductor die 55 including a first surface and a second surface opposite to the first surface, and a contact pad 55A provided on the first surface of the second semiconductor die 55. The semiconductor device 50 further includes a collet 54 including a first layer 54A made of a first metal material and a second layer 54B made of a second metal material different from the first metal material. The first layer 54A of the collet 54 is connected to the contact pad 53A of the first semiconductor die 53, and the second layer 54B of the collet 54 is connected to the contact pad 55A of the second semiconductor die 55.

[0051] As Figure 5 As shown in part A of [], the first layer 54A of the collet 54 may include an opening 54A.1 provided above the contact pad 55A of the second semiconductor die, wherein the second layer 54B extends into the opening 54A.1 so as to contact the contact pad 55A. The opening 54A.1 may have substantially the same size and shape as the contact pad 55A.

[0052] The semiconductor device 50 may further include a second die pad 52, wherein the second semiconductor die 55 may be attached to the second die pad 52 with its second surface.

[0053] The semiconductor device 50 may include a vertical structure like the first semiconductor die 53 and may also include a vertical transistor or vertical diode structure.

[0054] The semiconductor device 50 may further include a sealant 56, which may encapsulate the first semiconductor die 53 and the second semiconductor die 55, the first die pad 51 and the second die pad 52, and the clip 54 such that only the first die pad 51 and the second die pad 52 are exposed outwardly at the lower surface of the semiconductor device 50.

[0055] Figure 6 It includes part A and part B and shows an example of a semiconductor device according to the second aspect. Figure 6 The semiconductor device 60 includes a semiconductor die 62 including a first surface, a second surface opposite to the first surface, and a contact pad 62A provided on the first surface. The semiconductor device 60 further includes a clip 64 including a first metal layer 64A and a second layer 64B, wherein the first metal layer 64A of the clip 64 is connected to the contact pad, and the second layer 64B of the clip 64 is exposed outwardly.

[0056] The semiconductor device 60 may further include a die pad 61, wherein the semiconductor die 62 may be attached to the die pad 61 with its second surface.

[0057] The semiconductor device 60 may further include an external lead 65, wherein the first metal layer 64A of the clip 64 may be connected to the external lead 65. The external lead 65 and the die pad 61 may be arranged in the same plane and / or may be part of the same lead frame.

[0058] The semiconductor device 60 may further include a sealant 66, which may encapsulate the semiconductor die 62, the die pad 61, the clip 64, and the lead 65 such that the clip 64 is exposed on the upper surface of the semiconductor device 60, and the die pad 61 and the lead 65 are exposed on the lower surface of the semiconductor device 60. Such a configuration allows for double-sided cooling of the semiconductor device 60 by applying corresponding heat sinks to the upper surface and the lower surface of the semiconductor device 60.

[0059] The collet 64 may include a substantially horizontal portion 64.1 and a bent portion 64.2, wherein the angle at which the bent portion 64.2 bends downward relative to the horizontal portion 64.1 is in the range between 70° and 90°, and wherein the lower end of the first layer 64A is connected to the external lead 65, for example, via an intermediate solder layer.

[0060] The first lower layer 64A of the collet 64 may include or be composed of Cu, and the second upper layer 64B of the collet 64 may include or be composed of Al. It is known that Al has robustness against corrosion, such that the second layer 64B can also serve as an ideal passivation protection layer or anti-corrosion protection layer or anti-oxidation protection layer at the upper surface of the semiconductor device 60. The second layer 64B of the collet 64 may also be composed of a non-conductive material and, in addition, may be selected according to optimal anti-corrosion characteristics or anti-oxidation characteristics.

[0061] Figure 7 A flowchart showing an example of a process for connecting a collet to two different contact pads is shown.

[0062] As Figure 7 shown, the process 70 includes providing a collet (71) including a first metal layer and a second metal layer, wherein the collet and its first and second metal layers may include any of the features or characteristics described above in connection with the semiconductor device according to the first and second aspects or the collet according to the fourth aspect.

[0063] Figure 7 The process 70 further includes connecting the first metal layer to a first contact pad by a first connection process (72) and connecting the second metal layer to a second contact pad by a second connection process (73). The second contact pad may be an external lead or may be a contact pad of a semiconductor die.

[0064] The first and second connection processes may be similar or equivalent, or they may be different from each other. In the first case, for example, each of the first and second connection processes may include ultrasonic welding. In the second case, for example, one of the first and second connection processes may be ultrasonic welding and the other connection process may be another connection process, for example, soldering.

[0065] As used in this specification, the terms "connect", "couple", "electrically connect" and / or "electrically couple" may not necessarily mean that the elements must be directly connected or coupled together. Intermediate elements may be provided between the elements that are "connected", "coupled", "electrically connected" or "electrically coupled".

[0066] Additionally, as used herein, the term "above" with respect to, for example, a material layer formed on or located "above" the surface of an object can be used to indicate that the material layer can be "directly" on (e.g., formed on, deposited on, etc.) the implied surface "above", e.g., in direct contact therewith. The term "above" as used herein with respect to, for example, a material layer formed on or located "above" a surface can also be used to indicate that the material layer can be "indirectly" on (e.g., formed on, deposited on, etc.) the implied surface "above", e.g., one or more additional layers are disposed between the implied surface and the material layer.

[0067] Additionally, to the extent that the terms "comprising", "containing", "including", "having" or variations thereof are used in the detailed description and / or claims, such terms are intended to be inclusive in a manner similar to the term "including". That is, as used herein, the terms "comprising", "containing", "including", "having", "include", etc. are open-ended terms that indicate the presence of the stated element or feature, but do not preclude additional elements or features. The articles "a" and "the" are intended to include the plural as well as the singular, unless the context clearly dictates otherwise.

[0068] Furthermore, the term "exemplary" as used herein is intended to mean serving as an example, instance, or illustration. Any aspect or design described herein as "exemplary" is not necessarily to be construed as advantageous over other aspects or designs. Rather, the use of the term "exemplary" is intended to present the principles in a concrete manner. As used in this application, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless otherwise specified or clear from the context, "X employs A or B" is intended to mean any permutation in the natural inclusive permutation combination. That is, if X employs A; X employs B; or X employs both A and B, then "X employs A or B" is satisfied in any of the foregoing instances. Additionally, the article "a" as used in this application and the appended claims can generally be construed to mean "one or more", unless otherwise specified or clear from the context that it refers to the singular form. Also, at least one of A and B, etc. generally refers to A or B or both A and B.

[0069] Devices and methods for manufacturing the devices are described herein. The remarks made in connection with the described devices also hold for the corresponding methods, and vice versa. For example, if specific components of a device are described, then the corresponding method for manufacturing the device can include the act of providing the components in a suitable manner, even if such act is not explicitly described or shown in the drawings. Additionally, the features of the various exemplary aspects described herein can be combined with each other, unless otherwise specifically stated.

[0070] Although the present disclosure has been shown and described with respect to one or more embodiments, equivalent variations and modifications will occur to those skilled in the art at least in part based on a reading and understanding of this specification and the drawings. The present disclosure includes all such modifications and variations and is limited only by the concepts of the following claims. Specifically, with respect to the various functions performed by the components described above (e.g., elements, resources, etc.), the terms used to describe such components are intended to correspond (unless otherwise indicated) to any component that performs the specified function of the described component (e.g., functionally equivalent), even though such component may not be structurally equivalent to the disclosed structure that performs the functions in the exemplary embodiments illustrated herein of the present disclosure. In addition, although specific features of the present disclosure may have been disclosed with respect to only one of several embodiments, such features may be combined with one or more other features of the other embodiments where appropriate and advantageous for any given or particular application.

Claims

1. A semiconductor device (10, 50), comprising: A first semiconductor die (3, 53) including a first surface, a second surface opposite the first surface, and a contact pad (3A, 53A) disposed on the first surface; Another contact pad (2, 55A) spaced apart from the first semiconductor die (3, 53); A clip (4, 54) including a first layer (4A, 54A) made of a first metal material and a second layer (4B, 54B) made of a second metal material different from the first metal material; wherein The first layer (4A, 54A) of the clip (4, 54) is connected to the contact pad (3A, 53A), and the second layer (4B, 54B) of the clip (4, 54) is connected to the another contact pad (2, 55A).

2. The semiconductor device (10, 50) according to claim 1, further comprising: A first die pad (1, 51); Wherein The first semiconductor die (3, 53) is attached to the first die pad (1, 51) with its second surface.

3. The semiconductor device (10, 50) according to claim 1 or 2, wherein - The material of the contact pad (3A, 53A) is the same as the first metal material; and / or - The material of the another contact pad (2, 55A) is the same as the second metal material.

4. The semiconductor device (10, 50) according to claim 1 or 2, wherein One of the first metal material and the second metal material is Cu, and the other is Al.

5. The semiconductor device (10) according to claim 1 or 2, wherein The another contact pad (2) is an external lead (2).

6. The semiconductor device (10) according to claim 5, wherein The collet (4) includes a horizontal portion (4.1) and a bent portion (4.2), wherein, The horizontal portion (4.1) is at least partially disposed above the first semiconductor die (3), and wherein the bent portion (4.2) is at least partially disposed above the external lead (2).

7. The semiconductor device (10) according to claim 2, wherein said another contact pad is an external lead, and wherein, The lower surfaces of both the external lead and the first die pad are in the same plane.

8. The semiconductor device according to claim 2 or 7, wherein The other contact pad is an external lead, and wherein, The lower surfaces of the external lead and the first die pad are attached to the same lead frame.

9. The semiconductor device (50) according to claim 1 or 2, further comprising: A second semiconductor die (55) including a first surface and a second surface opposite the first surface; Wherein The another contact pad (55A) is a contact pad (55A) disposed on the second surface of the second semiconductor die (55).

10. The semiconductor device (50) according to claim 9, wherein The first layer (54A) includes an opening (54A.1) disposed over the other contact pad (55A), wherein, The second layer (54B) extends into the opening (54A.1) so as to contact the another contact pad (55A).

11. The semiconductor device (50) according to claim 9, further comprising A second die pad (52), wherein The second semiconductor die (55) is attached to the second die pad (52) with its second surface.

12. A semiconductor device (60) comprising a semiconductor die (62) including a first surface, a second surface opposite to the first surface, and a contact pad (62A) provided on the first surface; a clip (64) including a first layer (64A) made of a first metal material and a second layer (64B) made of a second material different from the first metal material; wherein the first layer (64A) of the clip (64) is connected to the contact pad (62A), and the second layer (64B) of the clip (64) is exposed.

13. The semiconductor device (60) according to claim 12, further comprising: a die pad (61); wherein the semiconductor die (62) is attached to the die pad (61) with its second surface.

14. The semiconductor device (60) according to claim 12 or 13, further comprising an external lead (65), wherein the first layer (64A) of the clip (64) is connected to the external lead (65).

15. The semiconductor device (60) according to claim 12 or 13, wherein one of the first metal material and the second material is Cu, and the other is Al.

16. The semiconductor device (60) according to claim 12 or 13, wherein the second material is a non-conductive material.

17. A process for connecting a clip to two different contact pads, the process comprising: providing a clip including a first metal layer made of a first metal material and a second metal layer made of a second metal material different from the first metal material; connecting the first metal layer to a first contact pad by a first connection process; and connecting the second metal layer to a second contact pad by a second connection process.

18. The process according to claim 17, wherein the second connection process is the same as the first connection process.

19. The process according to claim 18, wherein both the first connection process and the second connection process include ultrasonic welding.

20. The process according to claim 17, wherein the second connection process is different from the first connection process.

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