A detection unit, an ultra-wideband light detector and a detection method

Abstract

Disclosed are a detection unit, an ultra-wideband light detector and a detection method. The detection unit comprises an NbS3 crystal sheet and two electrodes. The two electrodes are arranged at the two ends of the length direction of the NbS3 crystal sheet and form ohmic contact with the NbS3 crystal sheet respectively. The ultra-wideband light detector comprises the detection unit and a detection circuit for collecting the potential difference data of the detection unit. The two electrodes are electrically connected to the detection circuit. The detection method mainly comprises the following steps: fixing the detector, irradiating the detector and collecting the data of the detection circuit. The present application relates to a detection unit, an ultra-wideband light detector and a detection method, which can overcome the problem of narrow detection bandwidth. The detection bandwidth can cover the ultraviolet to the terahertz waveband, has an ultra-wide detection bandwidth, and has the advantages of high speed and sensitivity.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of detection, in particular to a detection unit, an ultra-wideband light detector and a detection method. BACKGROUND

[0002] The light detector can convert the optical signal into the electrical signal, and then detect the optical power incident to the surface thereof. The ultra-wideband light detector can simultaneously detect different wave bands, such as ultraviolet, visible light, infrared and even terahertz electromagnetic wave radiation, and has a very important role in many fields such as infrared imaging, remote sensing, environmental monitoring, astronomical detection and spectral analysis. However, due to the limitation of photosensitive materials, the current light detector can only work in a specific wave band, and the current ultra-wideband spectral detection is realized by integrating different wave band detection methods and ensuring that each part works synchronously. The biggest problem of this method is that the device structure is very complex, which is difficult to apply to practice. Therefore, using a single device for terahertz to ultraviolet ultra-wideband light detection has become a research hotspot at present.

[0003] Restricted by the size of the material itself band gap, the detectors based on WSe2 (see Kim H S, Chauhan K R, Kim J, et al. Flexible vanadium oxide film for broadband transparent photodetector [J]. Applied Physics Letters, 2017, 110(10): 101907.), Bi single crystal (see Yao J D, Shao J M, Yang G W. Ultra-broadband and high-responsive photodetectors based on bismuth film at room temperature [J]. Scientific Reports, 2015, 5: 12320.), MoS2 (see Xie Y, Zhang B, Wang S, et al. Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717nm [J]. Advanced Materials, 2017, 29(17): 1605972.) and black phosphorus (see Xie Y, Zhang B, Wang S, et al. Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717nm [J]. Advanced Materials, 2017, 29(17): 1605972.) can only achieve broadband detection from ultraviolet to infrared band, and it is difficult to cover the terahertz band. Graphene and topological insulator have Dirac cone energy band structure, and are considered as the darling of ultra-wideband optical detection. Unfortunately, for graphene, the light absorption rate of single-layer graphene is only 2.3%, which makes the responsivity of graphene detector only a few mV / W (CN 107104167A). For topological insulator, only the surface has Dirac cone structure, and also faces the problem of low absorption. In addition, the zero band gap structure makes the dark current of graphene and topological insulator-based optical detection larger, which seriously affects the signal-to-noise ratio of the device.Although there are graphene heterojunctions (see Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene-Bi2Se3 Heterostructure), topological insulator heterojunctions (see Yao, J.; Shao, J.; Wang, Y.; Zhao, Z.; Yang, G. Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments. Nanoscale 2015, 7, 12535-12541.) and graphene detectors with three-dimensional microtube structures (CN107394001A), however, they either need additional bias or need to introduce relatively complex preparation processes, which restricts the application of the devices in practice. In summary, an ultra-wideband spectral detector covering terahertz to ultraviolet is needed for further research. SUMMARY

[0004] The embodiment of the present application provides a detection unit, an ultra-wideband light detector and a detection method, which can overcome the problem of narrow detection bandwidth, the detection bandwidth can cover from ultraviolet to terahertz band, has an ultra-wide detection bandwidth, and has the advantages of high speed and sensitivity.

[0005] To solve the above technical problems, the following technical solutions are adopted in the present application:

[0006] A detection unit for ultra-wideband light detection, comprising an NbS3 crystal sheet and two electrodes, the two electrodes are respectively arranged at the two ends of the length direction of the NbS3 crystal sheet, and respectively form an ohmic contact with the NbS3 crystal sheet.

[0007] The present application also provides an ultra-wideband light detector, comprising the above-mentioned detection unit, and a detection circuit for collecting the potential difference data of the detection unit, the two electrodes are respectively electrically connected with the detection circuit.

[0008] A possible design comprises a substrate for supporting the detection unit, and the detection unit is fixed on the substrate.

[0009] A possible design is that the two electrodes are two metal electrodes made of the same material.

[0010] One possible design, two of the electrodes are made of two different metals.

[0011] One possible design, the detecting unit further comprises a gate dielectric layer, a gate electrode and an antenna, two of the electrodes are source electrode and drain electrode, the gate dielectric layer is laid on the upper surface of the heterojunction formed by the NbS3 crystal sheet and the two electrodes, the gate electrode is arranged on the upper end of the gate dielectric layer and located at the center of the NbS3 crystal sheet, and the antenna is connected with the source electrode and the gate electrode respectively.

[0012] One possible design, the antenna comprises a first antenna and a second antenna, the first antenna is connected with the source electrode, and the second antenna is connected with the gate electrode.

[0013] One possible design, the material of the gate dielectric layer comprises SiO2, Al2O3, HfO2 or hexagonal boron nitride.

[0014] One possible design, the antenna is arranged as a spiral antenna, a bowtie antenna or a log-periodic antenna.

[0015] One possible design, both of the electrodes are in the form of a sheet and are fixed on the upper surface of the substrate or the upper surface of the NbS3 crystal sheet.

[0016] One possible design, the substrate is in the form of a sheet and is made of sapphire, Si / SiO2, quartz, glass or mica.

[0017] One possible design, there are multiple detecting units, and the multiple detecting units are arranged in a linear array or a planar array.

[0018] One possible design, the detecting circuit is an electrical measuring device for reading the potential difference.

[0019] One possible design, multiple detecting units are arranged on a substrate in a linear array, the substrate comprises a first substrate and a second substrate arranged at intervals, and two electrodes of any detecting unit are fixed on the first substrate and the second substrate respectively, and the two ends of the NbS3 crystal sheet form ohmic contacts with the two electrodes respectively.

[0020] One possible design, there are multiple substrates, the multiple substrates are arranged on the same plane, and the substrate and the detecting unit are in one-to-one correspondence, the two electrodes of each detecting unit penetrate through the corresponding substrate, and the NbS3 crystal sheet of the detecting unit is arranged on one side of the substrate and forms ohmic contacts with the two electrodes at the two ends.

[0021] One possible design, the cross section of the electrode is in the form of a rectangle, and the electrode forms a pin on the side of the substrate away from the NbS3 crystal sheet.

[0022] The application further provides a detection method of the above-mentioned ultra-wideband light detector, comprising:

[0023] Fixing the detector, fixing the detector on an optical translation stage;

[0024] Irradiating the detector, controlling the light source to irradiate the detector so that the light spot generated by the light source falls on the NbS3 crystal sheet;

[0025] Collecting detection circuit data, reading and recording the potential difference change data between the two ends of the detection unit.

[0026] The detector of the embodiment of the application has the following beneficial effects:

[0027] When the detector of the embodiment of the application is irradiated by the light source, the detection unit containing the NbS3 crystal generates a temperature gradient, and then generates a potential difference proportional to the light intensity between the two ends of the detection unit, and the potential difference is amplified and read out through the detection circuit, so that the ultra-wideband light detection is realized.

[0028] The detection bandwidth of the detector of the embodiment of the application can cover from ultraviolet to terahertz waveband, has an ultra-wide detection bandwidth, and has the advantages of high speed and sensitivity.

[0029] The detector of the embodiment of the application is simple to prepare, low in cost, and has a broad prospect in practical application.

[0030] Other features and advantages of the application will be set forth in the following description of the application, and in part will become apparent to those skilled in the art upon examination of the following specification or can be learned by practice of the application. The objects and other advantages of the application can be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. BRIEF DESCRIPTION OF DRAWINGS

[0031] The application will be further described below with reference to the drawings:

[0032] Figure 1 It is a schematic diagram of the detector of embodiment one;

[0033] Figure 2 It is a connection diagram of the detector of embodiment one;

[0034] Figure 3 It is a schematic diagram of the detector of embodiment two;

[0035] Figure 4 It is a schematic diagram of the detector of embodiment three;

[0036] Figure 5 It is a schematic diagram of the detection unit of embodiment three;

[0037] Figure 6A connection diagram of the probe for example three;

[0038] Figure 7 A schematic diagram of the probe for example four;

[0039] Figure 8 A schematic diagram of the probe for example five.

[0040] Fig. 1 is a schematic diagram of the NbS3 crystal sheet, Fig. 2 is a schematic diagram of the source electrode, Fig. 3 is a schematic diagram of the drain electrode, Fig. 4 is a schematic diagram of the substrate, Fig. 4-1 is a schematic diagram of the first substrate, Fig. 4-2 is a schematic diagram of the second substrate, Fig. 5 is a schematic diagram of the gate dielectric layer, Fig. 6 is a schematic diagram of the gate electrode, Fig. 7 is a schematic diagram of the first antenna, Fig. 8 is a schematic diagram of the second antenna, Fig. 9 is a schematic diagram of the metal wire, Fig. 10 is a schematic diagram of the light, and Fig. 11 is a schematic diagram of the detection circuit. DETAILED DESCRIPTION

[0041] In order to make the purposes, technical solutions and advantages of the present application clearer, the embodiments of the present application will be described below with reference to the drawings. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other in any manner without conflict.

[0042] Please refer to Figure 1 and Figure 2 the ultra-wideband light probe of the first embodiment of the present application. As shown in Figure 1 and Figure 2 , the probe comprises a detection unit and a detection circuit 11 for collecting data of the detection unit, wherein the detection unit comprises a NbS3 crystal sheet 1 and electrodes, two electrodes are arranged at the two ends of the NbS3 crystal sheet 1 in the length direction and form ohmic contact with the NbS3 crystal sheet 1, and the two electrodes are electrically connected with the detection circuit 11. Thus, the probe can convert the light irradiated thereon into an electrical signal, which is read out by the detection circuit 11, thereby realizing ultra-wideband light detection.

[0043] First, the NbS3 crystal sheet 1 is composed of NbS3 crystal and has a long strip shape. NbS3 is a typical quasi-one-dimensional semiconductor material, which has rich physical properties, such as Peierls phase transition and charge density wave. In recent years, low-dimensional materials with unique physical properties have gradually become a research hotspot, which also opens up a new research field of ultra-wideband detection methods. At present, the research on terahertz detection based on low-dimensional materials is mostly focused on two-dimensional materials such as graphene and black phosphorus. In addition to these materials, there are still many quasi-one-dimensional materials to be explored, such as the above-mentioned NbS3. However, the current research on NbS3 is mostly focused on crystal structure, band structure and charge density wave phase transition characteristics, and there is little research on photoelectric detection methods or even terahertz detection methods.

[0044] For example, Figure 1 and Figure 2As shown, the two electrodes are two metal electrodes of the same material, which are respectively provided with source electrode 2 and drain electrode 3. The source electrode 2 and the drain electrode 3 are both in the form of a sheet and are respectively arranged on the upper surface of the NbS3 crystal sheet 1 and form a good ohmic contact with the NbS3 crystal sheet 1. Thus, after the NbS3 crystal sheet 1 and the two electrodes are fixed, a "NbS3-metal" heterojunction is formed. At the same time, the source electrode 2 and the drain electrode 3 are respectively electrically connected to the detection circuit 11 through a lead wire (not shown in the figure) to form a loop, so as to transmit the electrical signal generated by the NbS3 crystal sheet 1 to the detection circuit 11 for measurement.

[0045] In addition, the detector further includes a substrate 4 for supporting the detection unit. The substrate 4 is in the form of a sheet, and the NbS3 crystal sheet 1 is fixed on the upper end surface of the substrate 4. The substrate 4 can provide stable mechanical support for the detector, and the material thereof includes but is not limited to sapphire, Si / SiO2, quartz, glass or mica. In this embodiment, the substrate 4 is made of sapphire.

[0046] Thus, it can be seen that the detector is simple to prepare and has relatively low cost. Moreover, the detection method is also simple and fast. Specifically, the detection method mainly includes fixing the detector, irradiating the detector and collecting the data of the detection circuit 11. During detection, first, the substrate of the detector is fixed on a stable optical translation stage so that it can face the light directly. Second, the light source is turned on so that the light rays 10 can be focused on the "NbS3-metal" heterojunction through the optical path, i.e., the light spot falls on the NbS3 crystal sheet 1. The diameter of the light spot should be smaller than the length of the NbS3 crystal sheet 1. In general, the size of the light spot in the laboratory is usually 1-2 mm, so that the light spot can only fall on one place of the NbS3 crystal sheet 1 and cannot cover the entire NbS3 crystal sheet 1. At this time, under the irradiation of the light, the temperature of the NbS3 crystal material rises, generating a photothermal effect, thereby generating a significant current in a few milliseconds. The current intensity depends on the power of the electromagnetic wave, and the photocurrent in the loop increases linearly with the increase of the power of the electromagnetic wave. It can also be understood that the irradiation of the light rays will cause a temperature difference between the two ends of the detection unit, and this temperature difference will generate a potential difference proportional to the light intensity between the two ends. Finally, the potential difference can be amplified and read out by the detection circuit 11, thereby realizing the ultra-wideband light detection. Thus, it can be seen that the detection response is less than 10 milliseconds, the response is fast, the reaction is sensitive, and the detection bandwidth is ultra-wide, which can cover the ultraviolet to terahertz waveband and has wide application.

[0047] Please refer to Figure 3The ultra-wideband light detector of the second embodiment of the present application. The detector comprises a detecting unit and a detecting circuit for collecting data of the detecting unit, wherein the detecting unit further comprises a NbS3 crystal sheet 1 and electrodes, and two electrodes of the detector are metal electrodes of different materials, i.e. the source electrode 2 and the drain electrode 3 are of different materials, so that the detecting unit forms a heterojunction of "NbS3-metal". In addition, a coupling antenna can be arranged at the electrodes to improve the absorption.

[0048] Thus, in the detecting process, the size of the selected light spot should be much larger than the length of the NbS3 crystal sheet 1, so that the light irradiates on the whole detecting unit. Since the materials of the two metal electrodes at the two ends of the detecting unit are different, the Fermi energy levels at the two ends are different, so that the Seebeck coefficients at the two ends are different. The photothermal effect is generated under the light irradiation, which can generate a significant current in a few milliseconds, and the current intensity depends on the power of the electromagnetic wave. With the increase of the power of the electromagnetic wave, the photocurrent in the loop linearly increases, and the data can be read out by the detecting circuit to realize the ultra-wideband light detection.

[0049] Please refer to Figures 4 to 6 The ultra-wideband light detector of the third embodiment of the present application. Compared with the detector of the first embodiment, the detecting unit further comprises a gate dielectric layer 5, a gate electrode 6 and an antenna, and the two electrodes are the source electrode 2 and the drain electrode 3.

[0050] Specifically, the gate dielectric layer 5 is laid on the upper surface of the heterojunction formed by the NbS3 crystal sheet 1 and the two electrodes, and the gate dielectric layer 5 includes but is not limited to SiO2, Al2O3, HfO2 or hexagonal boron nitride. In this embodiment, the gate dielectric layer 5 is made of SiO2. The gate electrode 6 is also in the form of a sheet, which is deposited on the upper end of the gate dielectric layer 5 and located at the center of the NbS3 crystal sheet 1. The gate electrode 6 can gate control the detecting unit through the gate dielectric layer. In addition, the source electrode 2 and the gate electrode 6 are both provided with an antenna, which comprises a first antenna 7 arranged on the source electrode 2 and a second antenna 8 arranged on the gate electrode 6. The first antenna 7 and the second antenna 8 are both metal pieces, and form a bowtie antenna which can be coupled under the condition of being electrified. The antenna is not limited to the bowtie antenna, and can also be a spiral antenna or a logarithmic-periodic antenna. Meanwhile, the drain electrode 3 is connected to the detecting circuit 11 through a metal wire 9, and the source electrode 2 is also connected to the detecting circuit 11, forming a loop.

[0051] The size of the selected light spot is much larger than the length of the NbS3 crystal sheet 1 during the detection process, so that the light is irradiated on the entire detection unit. Under the light irradiation condition, due to the antenna coupling, the channel material (i.e. the NbS3 crystal) between the source electrode 2 and the gate electrode 6 absorbs more energy, and the temperature is higher than that of the material between the gate electrode 6 and the drain electrode 3, thereby generating a photo-thermal effect, and a significant current is generated within a few milliseconds. The current intensity depends on the power of the electromagnetic wave, and as the power of the electromagnetic wave increases, the photocurrent in the loop linearly increases, and the detection circuit 11 can read the data to realize the ultra-wideband light detection.

[0052] Referring to Figure 7 The ultra-wideband light detector of the fourth embodiment of the present application shown in FIG. 4, compared with the detector of the first embodiment, the substrate 4 is provided with a plurality of detection units, and the plurality of detection units are arranged in a linear array, and can also be arranged in a surface array.

[0053] Specifically, the substrate 4 includes a first substrate 4-1 and a second substrate 4-2 arranged at intervals, and the first substrate 4-1 and the second substrate 4-2 are arranged in parallel. The two electrodes of any detection unit are fixed on the first substrate and the second substrate respectively, as shown in Figure 7 The drain electrode 3 is arranged on the side of the second substrate 4-2 facing away from the first substrate 4-1, and the source electrode 2 is arranged on the side of the first substrate 4-1 facing the second substrate 4-2. Notably, the NbS3 crystal sheet 1 is in a cylindrical shape, one end of which penetrates through the second substrate 4-2 and forms a good ohmic contact with the drain electrode 3, and the other end is fixed on the first substrate 4-1 and forms a good ohmic contact with the source electrode 2. Of course, the source electrode 2 and the drain electrode 3 can also be arranged on the first substrate 4-1 and the second substrate 4-2 respectively, facing each other or facing away from each other. In addition, a plurality of detection circuits 11 (not shown in the figure) correspond to the detection units one by one, and read the potential difference generated by each corresponding detection unit.

[0054] Therefore, when the same or different light irradiates the plurality of detection units at the same time, by reading the data of each detection unit, the plurality of ultra-wideband light detection processes can be carried out simultaneously.

[0055] Referring to Figure 8 The ultra-wideband light detector of the fifth embodiment of the present application shown in FIG. 5, compared with the detector of the first embodiment, includes a plurality of detection units and a substrate 4, and the plurality of substrates 4 and the detection units correspond to each other to form a surface array.

[0056] Specifically, a plurality of identical substrates 4 are arranged on the same plane, and the NbS3 crystal sheet 1 is arranged between the source electrode 2 and the drain electrode 3, and is arranged on one side of the substrate 4 and forms a good ohmic contact with the source electrode 2 and the drain electrode 3, respectively. In addition, the source electrode 2 and the drain electrode 3 are both rectangular in cross section, both extend through the substrate 4 and extend downward to form pins, and the two pins can be inserted into the interface of the detection circuit 11 (not shown in the figure), thereby eliminating the lead connection. A plurality of detection circuits 11 (not shown in the figure) correspond to the detection units one by one, and respectively read the data of the corresponding detection units.

[0057] Therefore, when the same or different light rays simultaneously irradiate a plurality of detection units, by reading the data of each detection unit, a plurality of ultra-wideband light detection processes can be performed simultaneously.

[0058] In combination with the above embodiments, it can be seen that the detection bandwidth of the detector can cover from ultraviolet to terahertz waveband, has an ultra-wide detection bandwidth, and also has the advantages of high-speed sensitivity and rapid response. At the same time, the detector is simple to prepare and low in cost, and has a broad prospect in practical applications. In addition, although the detector in the above embodiments is realized by the photothermal electric effect, however, it should be understood by those skilled in the art that in other embodiments, other detection principles including but not limited to radiation heat effect, pyroelectric effect, etc. can also be used.

[0059] In the description of the present application, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, "connecting" can be fixed connection, or detachable connection, or integrally connected; can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0060] In the description of the present application, the terms "one embodiment", "some embodiments", "a specific embodiment" and the like mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0061] Although the embodiments of the present application are disclosed as above, the content described is only the embodiments adopted for the purpose of facilitating the understanding of the present application, and is not intended to limit the present application. Any person skilled in the art of the present application can make any modification and change in the form and details without departing from the spirit and scope of the present application disclosed, but the patent protection scope of the present application shall be subject to the scope defined by the appended claims.

Claims

1. An ultra-wideband photodetector, comprising: The detection unit and a detection circuit for collecting the potential difference data on the detection unit; The detection unit is used for ultra-wideband light detection, and the detection unit comprises an NbS3 crystal sheet and two electrodes, the two electrodes are respectively arranged at two ends of the length direction of the NbS3 crystal sheet, and respectively form ohmic contact with the NbS3 crystal sheet. Under light irradiation, the NbS3 crystal sheet absorbs energy and temperature rises, generates photothermal effect, and the detection unit containing the NbS3 crystal generates temperature gradient, and further generates potential difference proportional to light intensity at two ends of the detection unit. The two electrodes are respectively electrically connected with the detection circuit, and the detection circuit amplifies and reads out the potential difference.

2. The super wideband optical detector of claim 1, wherein, The detection unit is fixed on the substrate.

3. The ultra-wideband optical probe of claim 2, wherein, The two electrodes are two metal electrodes of the same material.

4. The ultra-wideband optical probe of claim 2, wherein, The two electrodes are two metal electrodes of different materials.

5. The ultra-wideband optical probe of claim 2, wherein, The detection unit further comprises a gate dielectric layer, a gate electrode and an antenna, the two electrodes are source electrode and drain electrode, the gate dielectric layer is laid on the upper surface of the heterojunction formed by the NbS3 crystal sheet and the two electrodes, the gate electrode is arranged at the upper end of the gate dielectric layer and located at the center of the NbS3 crystal sheet, and the antenna is connected with the source electrode and the gate electrode respectively.

6. The super wideband optical detector of claim 5, wherein, The antenna comprises a first antenna and a second antenna, the first antenna is connected with the source electrode, and the second antenna is connected with the gate electrode.

7. The ultra-wideband optical probe of claim 5, wherein, The material of the gate dielectric layer comprises SiO2, Al2O3, HfO2 or hexagonal boron nitride.

8. The ultra-wideband optical probe of claim 5, wherein, The antenna is a spiral antenna, a butterfly antenna or a log-periodic antenna.

9. The super wideband optical detector of claim 3 or 4 or 5, wherein, Both electrodes are in the form of a sheet and are fixed on the upper surface of the substrate or the upper surface of the NbS3 crystal sheet.

10. The ultra-wideband optical probe of any one of claims 2-8, wherein, The substrate is in the form of a sheet and is made of sapphire, Si / SiO2, quartz, glass or mica.

11. The ultra-wideband optical probe of any one of claims 2-8, wherein, The detection unit has a plurality of detection units arranged in a linear array or a two-dimensional array.

12. The ultra-wideband optical probe according to any one of claims 1-8, wherein, The detection circuit is an electrical measurement device for reading the potential difference.

13. The ultra-wideband optical probe of claim 11, wherein, The plurality of detection units are arranged on the substrate in a linear array, and the substrate comprises a first substrate and a second substrate arranged at intervals, and the two electrodes of any detection unit are fixed on the first substrate and the second substrate respectively, and the two ends of the NbS3 crystal sheet form ohmic contact with the two electrodes respectively.

14. The ultra-wideband optical probe of claim 11, wherein, The substrate has a plurality of substrates arranged on the same plane, and the substrate and the detection unit correspond to each other, the two electrodes of each detection unit penetrate through the corresponding substrate, and the NbS3 crystal sheet of the detection unit is arranged on one side of the substrate and forms ohmic contact with the two electrodes at two ends.

15. The ultra-wideband optical probe of claim 14, wherein, The electrode cross section is in the form of a rectangle, and the electrode forms a pin on the side of the substrate away from the NbS3 crystal sheet.

16. A method of detecting with an ultra-wideband photodetector as claimed in any one of claims 1-15, characterized in that The method comprises the following steps: Fixing the detector on the optical translation stage; Irradiating the detector, controlling the light source to irradiate the detector so that the light spot generated by the light source falls on the NbS3 crystal sheet; Collecting the detection circuit data, reading and recording the potential difference change data of the two ends of the detection unit.

Images