Gap filling layer, method for forming the same, and semiconductor device
The multilayer dielectric layer structure solves the cracking problem when the dielectric layer fills the trench, ensuring the stability and reliability of the semiconductor device.
CN110880511BActive Publication Date: 2026-07-17SAMSUNG ELECTRONICS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2019-09-05
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing technologies are prone to cracking when using different types of dielectric layers to fill trenches, leading to operational defects in semiconductor devices.
Method used
A multi-layer dielectric structure is adopted, including a first dielectric layer, a second dielectric layer and a third dielectric layer. By controlling the density and deposition rate of each layer, a U-shaped or tubular structure is formed to avoid the occurrence of cracks.
Benefits of technology
It effectively prevents cracks in the dielectric layer during annealing and planarization processes, thereby improving the reliability and stability of semiconductor devices.
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Smart Images
Figure CN110880511B_ABST
Abstract
Apparatuses including gap fill layers, methods of forming gap fill layers, and semiconductor devices are provided. An apparatus including a gap fill layer can include an upper layer on an underlying layer defining a trench extending from a top surface of the upper layer toward the underlying layer, and the gap fill layer can be a multi-layer structure filling the trench. The gap fill layer can include a first dielectric layer filling a first portion of the trench and having a top surface proximate the top surface of the upper layer, a second dielectric layer filling a second portion of the trench and having a top surface proximate the top surface of the upper layer and recessed more toward the underlying layer than the top surface of the first dielectric layer, and a third dielectric layer filling a remaining portion of the trench and covering the top surface of the second dielectric layer.
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