Mask repair equipment and mask repair method

Abstract

A mask repair device and a mask repair method are provided, the mask repair device may include: a platform; a stereo imaging unit that measures a stereo image of a mask on the platform; a control unit that compares the stereo image with a normal image of the mask and generates a defect image of the mask; and a laser unit that irradiates a laser beam onto a defective portion of the mask under the control of the control unit. Based on the defect image, the control unit may control the laser unit so that the laser beam is sequentially irradiated onto m multiple layers of the defective portion while repeatedly moving in a first direction and a second direction that intersect each other.

Description

[0001] Korean Patent Application No. 10-2018-0127506, filed on October 24, 2018 in the Korean Intellectual Property Office, and entitled “MASK REPAIR APPARATUS AND MASK REPAIR METHOD” is hereby incorporated by reference in its entirety. Technical Field

[0002] The present disclosure relates to a mask repair device and a mask repair method. Background Art

[0003] Organic light emitting diode (OLED) display devices have attracted attention as next-generation flat panel display devices because they provide excellent brightness and viewing angle characteristics without requiring a light source unit as required by a liquid crystal display (LCD) device. Since no light source unit is required, OLED display devices can be made lighter and thinner than LCD devices. In addition, OLED display devices have other technical advantages (e.g., low power consumption, high brightness, and high response speed).

[0004] The OLED display device includes a plurality of organic light-emitting devices, each of which includes an anode, an organic light-emitting layer, and a cathode. When holes and electrons are injected into the organic light-emitting layer from the anode and the cathode, respectively, excitons are formed in the organic light-emitting layer. When the excitons undergo a transition to a ground state, light is emitted from the organic light-emitting device.

[0005] The process of manufacturing an organic light emitting device includes placing a mask on a substrate and providing an organic material onto the substrate through an opening of the mask. With recent technological advances, the demand for high-resolution display devices has increased, thereby increasing the number of organic light emitting devices in the display devices. Summary of the invention

[0006] According to an embodiment, a mask repairing apparatus may include: a platform; a stereoscopic imaging unit configured to measure a stereoscopic image of a mask set on the platform; a control unit configured to compare the stereoscopic image with a normal image of the mask to generate a defect image of the mask; and a laser unit configured to irradiate a laser beam onto a defective portion of the mask under the control of the control unit. Based on the defect image, the control unit may control the laser unit so that the laser beam is sequentially irradiated onto m multiple layers of the defective portion while repeatedly moving in a first direction and a second direction intersecting each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Features will become apparent to those skilled in the art by describing exemplary embodiments in detail with reference to the accompanying drawings, in which:

[0008] Figure 1 shows the structure of a mask repair device according to an embodiment;

[0009] Figure 2 Shows Figure 1 The planar structure of the mask;

[0010] Figure 3 Shows the formation of Figure 2 Abnormal openings in the mask;

[0011] Figure 4 Shown along Figure 3 A cross-sectional view taken along line II';

[0012] Figure 5 Shows Figure 1 Operation of a stereoscopic imaging unit;

[0013] Figure 6 shows the use of a control unit to Figure 5 An operation of correcting a stereoscopic image obtained by a stereoscopic imaging unit;

[0014] Figures 7 to 9 An operation of using a control unit to compare a stereoscopic image with a normal image to generate a defect image is shown;

[0015] Figures 10 to 16 An operation of repairing a mask using a laser beam is shown;

[0016] Fig.17 An operation of removing a second defective portion is shown;

[0017] Fig.18 An operation of removing a third defective portion is shown;

[0018] Fig.19 A process of changing the focus position of a laser beam according to an embodiment is shown;

[0019] Fig. 20 showing the provision of deposition material onto the substrate through the normal opening; and

[0020] Fig.21 The provision of deposition material onto a substrate through an abnormal opening is shown. DETAILED DESCRIPTION

[0021] Example embodiments will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown. However, example embodiments may be implemented in many different forms, and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concepts of the example embodiments to those of ordinary skill in the art. In the accompanying drawings, the thickness of layers and regions are exaggerated for clarity. Like reference numerals in the drawings represent like elements, and therefore their description will be omitted.

[0022] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be an intermediate element. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there is no intermediate element. Throughout the text, the same reference numerals represent the same elements. As used herein, the term "and / or" includes any and all combinations of one or more of the related listed items. Other words used to describe the relationship between elements or layers (e.g., "between" and "directly between", "adjacent to" and "directly adjacent to", "on" and "directly on") should be interpreted in a similar manner.

[0023] It will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first element, first component, first region, first layer or first part discussed below may be referred to as the second element, second component, second region, second layer or second part without departing from the teachings of the exemplary embodiments.

[0024] For ease of description, spatially relative terms such as "under", "below", "below", "above", "on", etc. may be used herein to describe the relationship between one element or feature and another (other) element or feature as shown in the figure. It will be understood that the spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is turned over, the element described as "below" or "below" other elements or features will subsequently be positioned as "above" the other elements or features. Therefore, the exemplary term "below" can include both above and below orientations. The device can be positioned otherwise (rotated 90 degrees or at other orientations), and the spatially relative descriptors used here are interpreted accordingly.

[0025] The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the exemplary embodiments. As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that if the terms "comprises" and "comprising" are used herein, such terms indicate the presence of the features, wholes, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groups thereof.

[0026] Example embodiments are described herein with reference to cross-sectional illustrations that are schematic representations of idealized embodiments (and intermediate structures) of example embodiments. As such, variations from the shapes of the illustrations resulting from, for example, manufacturing techniques and / or tolerances are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of the regions illustrated herein, but are to include deviations in shapes resulting from, for example, manufacturing.

[0027] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the example embodiments belong. It will also be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein.

[0028] Figure 1 FIG. 2 shows a mask repair device according to an embodiment. Figure 1 , the mask repair apparatus MRA according to the embodiment may include a stage STG, a stereo image measurement unit (hereinafter, stereo imaging unit) 3D, a laser unit LU, and a control unit CP.

[0029] The mask MK to which the repair process will be performed may be located on the platform STG. The mask MK may be formed of or include a metal material, for example, the mask MK may be a fine metal mask (FMM). The mask MK may have an elongated shape and define a plurality of openings therein. The details of the mask MK will be described below.

[0030] The stereo imaging unit 3D can be located above the mask MK and can measure the three-dimensional surface profile of the mask MK. Various non-contact measuring devices can be used as the stereo imaging unit 3D. For example, a phase shift interferometer, a white light scanning interferometer, a confocal scanning microscope system, etc. can be used as the stereo imaging unit 3D.

[0031] The stereo imaging unit 3D may irradiate light L onto the mask MK to measure the surface profile of the mask MK. The light L may be incident orthogonally to the upper surface of the mask MK. The surface profile of the mask MK may be defined as a stereo image of the surface of the mask MK. The stereo image of the mask MK obtained by the stereo imaging unit 3D may be provided to the control unit CP.

[0032] The control unit CP may compare the stereoscopic image of the mask MK with the normal image of the mask MK to generate a defect image corresponding to the defective portion of the mask MK. Based on the defect image, the control unit CP may control the position of the laser unit LU to allow the laser beam LAR to irradiate the defective portion of the mask MK.

[0033] Under the control of the control unit CP, the laser unit LU may generate a laser beam LAR and may irradiate the laser beam LAR onto the defective portion of the mask MK. The laser unit LU may irradiate the laser beam LAR onto the defective portion of the mask MK while repeatedly moving along a first direction and a second direction that intersect each other and are parallel to the upper surface of the mask MK. This operation will be described in more detail below. When the defective portion of the mask MK is removed by the laser beam LAR, the mask MK may be in a repair state.

[0034] The detailed operations of the stereoscopic imaging unit 3D, the laser unit LU, and the control unit CP will be described below.

[0035] Figure 2 It is shown Figure 1 FIG. 1 is a diagram showing a planar structure of the mask MK. Figure 2 The mask MK may have an elongated shape extending in the first direction DR1. The mask MK may include a plurality of opening groups OPG, and a plurality of openings OP are defined in each of the plurality of opening groups OPG.

[0036] The opening OP may include a normal opening and an abnormal opening. Figure 3 and Figure 4 The abnormal openings OP are described in more detail. The openings OP may be arranged in a certain shape.

[0037] The groove G may be defined in each of opposite ends of the mask MK in the first direction DR1. A direction crossing the first direction DR1 may be defined as a second direction DR2.

[0038] Although three opening groups OPG are shown, any number of opening groups OPG may be provided. A plurality of substrates may be respectively under the opening groups OPG, and an organic material for forming an organic light emitting layer may be deposited on the substrates through the openings OP of the opening groups OPG.

[0039] Figure 3 yes Figure 2 An enlarged view of the first area A1 of the mask MK. Figure 4 is along Figure 3 As an example, in Figure 3 An enlarged shape of the first area A1 of the mask MK having the abnormal openings E_OP1 , E_OP2 , and E_OP3 is shown in FIG.

[0040] Reference Figure 3 and Figure 4, the opening OP may include a normal opening N_OP and abnormal openings E_OP1, E_OP2, and E_OP3. The normal opening N_OP may be circular. In an embodiment, the normal opening N_OP may have various shapes such as an elliptical shape, a rectangular shape, a diamond shape, and the like.

[0041] The width of each of the normal openings N_OP along the first direction DR1 may increase from the first surface S1 of the mask MK toward the second surface S2 of the mask MK located opposite to the first surface S1 in a third direction DR3 intersecting both the first direction DR1 and the second direction DR2. The second surface S2 may be above the first surface S1. The width may be a value measured in a horizontal direction of, for example, the first direction DR1. The width of the first opening OP1 in the first surface S1 of the mask MK may be smaller than the width of the second opening OP2 defined in the second surface S2 of the mask MK. Similarly, along the second direction DR2, the width of the first opening OP1 in the first surface S1 of the mask MK may be smaller than the width of the second opening OP2 defined in the second surface S2 of the mask MK.

[0042] The abnormal openings E_OP1, E_OP2, and E_OP3 may have a shape different from that of the normal opening N_OP. The mask MK may include defect portions DFT1, DFT2, and DFT3 that define the abnormal openings E_OP1, E_OP2, and E_OP3, respectively.

[0043] The defective portions DFT1, DFT2, and DFT3 of the mask MK may be defined as portions having a shape different from the shape of the portion defining the normal opening N_OP of the mask MK. For example, when the shapes of the abnormal openings E_OP1, E_OP2, and E_OP3 are compared or overlapped with the shapes of the normal opening N_OP, there are portions that are different in shape. Such portions may be defined as defective portions DFT1, DFT2, and DFT3. As an example, with respect to the abnormal openings E_OP1 and E_OP2, in Figure 4 The shape of the normal opening N_OP is depicted by a dotted line.

[0044] The size of each of the abnormal openings E_OP1, E_OP2, and E_OP3 may be smaller than that of each of the normal openings N_OP. The abnormal openings may have a non-circular shape (e.g., the abnormal openings E_OP1 and E_OP3), or may have a circular shape with a diameter smaller than that of the normal opening N_OP (e.g., the abnormal opening E_OP2).

[0045] The abnormal openings E_OP1, E_OP2 and E_OP3 may include a first abnormal opening E_OP1, a second abnormal opening E_OP2 and a third abnormal opening E_OP3. The first defect portion DFT1 may protrude in the first direction DR1 to define the first abnormal opening E_OP1. The second defect portion DFT2 may be defined as a second abnormal opening E_OP2 that is circular and smaller than the normal opening N_OP. The third defect portion DFT3 may protrude in the second direction DR2 to define the third abnormal opening E_OP3. Except for the difference in the orientation of the protrusion, the third defect portion DFT3 and the first defect portion DFT1 may have a cross-sectional structure similar to each other.

[0046] As an example, the first defect portion DFT1 and the third defect portion DFT3 are shown as protruding in the first direction DR1 and the second direction DR2, respectively. In an embodiment, the mask MK may include defect portions protruding in various directions. In addition, the second abnormal opening E_OP2 is shown to be smaller than the normal opening N_OP. As an example, the area of ​​the normal opening N_OP may be closed. In this case, the opening OP is not formed.

[0047] Figure 5 Shows Figure 1 For ease of illustration and description, Figure 5 Shows the corresponding Figure 4 Hereinafter, an operation of measuring a stereoscopic image of a portion of the mask MK where the first abnormal opening E_OP1, the second abnormal opening E_OP2, and the normal opening N_OP are formed will be described.

[0048] Reference Figure 5 The stereo imaging unit 3D may be above the mask MK to irradiate light L onto the mask MK while moving over the mask MK (eg, moving in the first direction DR1 and the second direction DR2). The stereo imaging unit 3D may irradiate light L onto the mask MK to measure a stereoscopic image of the mask MK.

[0049] The exposed surface ES of the mask MK, which is exposed when viewed from a top plan view of the mask MK, can be measured as a stereoscopic image of the surface of the mask MK. Figure 5 In FIG. 8 , the exposed surface ES of the mask MK is depicted with a thicker line than the lines of other surfaces of the mask MK.

[0050] Since the light L is provided from an upper region of the mask MK toward the mask MK (e.g., orthogonal to the mask MK), the exposed surface ES of the mask MK may be irradiated with the light L. In other words, the exposed surface ES includes a surface on which the light L is incident. The stereoscopic imaging unit 3D may measure a stereoscopic image of the exposed surface ES irradiated with the light L.

[0051] The first defect portion DFT1 having the protrusion structure may include a top surface US exposed in a top plan view and a bottom surface LS not exposed in a top plan view.

[0052] The boundary between the top surface US and the bottom surface LS may be defined as an edge EG of the first defect portion DFT1. The edge EG may not be located at the same level as the first surface S1 of the mask MK. For example, the edge EG may be between the first surface S1 and the second surface S2 of the mask MK.

[0053] The top surface US of the first defective part DFT1 exposed to the light L may be measured in the stereoscopic image. The bottom surface LS of the first defective part DFT1 not exposed to the light L may not be measured in the stereoscopic image.

[0054] Similar to the portion of the mask MK defining the first abnormal opening E_OP1 , a stereoscopic image of the portion of the mask MK defining the third abnormal opening E_OP3 may be measured.

[0055] Figure 6 is an exemplary illustration of using the control unit CP to Figure 5 The stereo imaging unit obtains a stereo image and performs a correction operation on the stereo image. Figure 6 , the exposed surface ES of the mask MK exposed to the light L may be measured by a stereo image, and the stereo image may be provided to the control unit CP. However, the bottom surface LS of the first defect portion DFT1 may not be measured by a stereo image.

[0056] The control unit CP may correct the stereoscopic image of the first defect portion DFT1. The control unit CP may generate a virtual image of the bottom surface LS of the first defect portion DFT1 which is not exposed to the light L and is not measured by the stereoscopic image.

[0057] When the edge EG of the first defect portion DFT1 is located between the first surface S1 and the second surface S2, the control unit CP may analyze the measured stereoscopic image and may set the virtual side surface VS to be perpendicular to the bottom of the mask MK from the edge EG. That is, the virtual side surface VS may have a vertical side surface extending toward the first surface S1 along the third direction DR3, for example.

[0058] The bottom portion of the virtual side surface VS may be connected to the first surface S1 of the mask MK, for example, along the first direction DR1 and the second direction DR2. The control unit CP may combine the stereoscopic image measured by the stereoscopic imaging unit 3D with the virtual side surface VS to generate a stereoscopic image of the first defective portion DFT1. The stereoscopic image of the third defective portion DFT3 may be corrected in the same manner as the first defective portion DFT1.

[0059] Unlike the first defect portion DFT1, since the edge of the second defect portion DFT2 defined as the boundary between the top surface and the bottom surface of the second defect portion DFT2 is at the same level as the first surface S1 of the mask MK, the virtual side surface VS may not be generated on the second defect portion DFT2. In other words, since the entire second defect portion DFT2 is exposed to the light L, that is, there is no edge between the first surface S1 and the second surface S2, the stereoscopic image of the second defect portion DFT2 is complete. In addition, since there is no defect portion to be removed, the virtual side surface VS may not be generated on the normal opening E_OP.

[0060] Figures 7 to 9 An operation of comparing a stereoscopic image and a normal image using the control unit CP to generate a defective image is shown. An operation of generating a defective image with respect to the first defect portion DFT1 is described as an example.

[0061] Reference Figure 7 , the control unit CP may divide the stereoscopic image IMG into n first multi-level images IMG1-IMGn. Here, n is a positive integer. For example, the control unit CP may correct the stereoscopic image of the first defect portion DFT1, and then may divide the stereoscopic image IMG obtained from the portion of the mask MK defining the first abnormal opening E_OP1 into n first multi-level images IMG1-IMGn.

[0062] The n first multi-level images IMG1-IMGn may include n different stereo images IDFT1-IDFTn and n different opening images IOP1-IOPn. The k-th image IMGk may be the same as in Figure 6 The image corresponding to the edge EG of the first defect portion DFT1 shown in FIG. Here, k may be a positive integer.

[0063] Each of the n first multi-level images IMG1-IMGn may be an image corresponding to a thickness of about 0.5 micrometers. The thickness is measured along the third direction DR3. As an example, when the mask MK has a thickness of 20 micrometers, the number n may be 40.

[0064] Reference Figure 8, the control unit CP may divide the normal image N_IMG of the mask MK into n second multi-level images N_IMG1-N_IMGn. The normal image N_IMG of the mask MK may have an image having the same shape as the shape of a portion of the mask MK defining the normal opening N_OP.

[0065] The n second multi-level images N_IMG1-N_IMGn may correspond to the n first multi-level images IMG1-IMGn, respectively. Although not shown, the control unit CP may include a memory device used to store the normal image N_IMG including the n second multi-level images N_IMG1-N_IMGn.

[0066] Reference Figure 7 , Figure 8 and Fig. 9 , the control unit CP may compare the stereoscopic image IMG with the normal image N_IMG to generate a defect image IDT. The defect image IDT may include m multi-level defect images IDT1-IDTm.

[0067] For example, the control unit CP can Figure 7 The n first multilevel images IMG1-IMGn and Figure 8 The n second multi-level images N_IMG1-N_IMGn are compared to generate m multi-level defect images IDT1-IDTm. Here, m is a positive integer equal to or less than n.

[0068] The control unit CP may subtract the areas of the n second multi-level images N_IMG1-N_IMGn from the areas of the n first multi-level images IMG1-IMGn, respectively. For example, the control unit CP may remove the portions corresponding to the n second multi-level images N_IMG1-N_IMGn from the n first multi-level images IMG1-IMGn. Therefore, only m multi-level defect images IDT1-IDTm may remain after the subtraction.

[0069] As a result of the above operation, the control unit CP may generate m multi-level defect images IDT1-IDTm with respect to the first defect portion DFT1. The m multi-level defect images IDT1-IDTm may be images cut into m layers. The m multi-level defect images IDT1-IDTm may include first to m-th defect images IDT1 to IDTm sequentially stacked in a downward direction.

[0070] When the n first multi-level images defining the normal opening N_OP of the mask MK may have the same shape as the n second multi-level images N_IMG1 -N_IMGn, there will be no remaining image after the subtraction.

[0071] Similarly, the portion corresponding to the n second multi-level images N_IMG1-N_IMGn can be removed from the stereoscopic image defining the second abnormal opening E_OP2 of the mask MK to generate m multi-level defect images about the second defect portion DFT2. In addition, m multi-level defect images about the third defect portion DFT3 defining the third abnormal opening E_OP3 can be generated in the same manner as the first abnormal opening E_OP1.

[0072] The first defect portion DFT1 may extend from the first surface S1 to the second surface S2. In this case, the number of m multi-level defect images IDT1-IDTm may be equal to the number of n first multi-level images IMG1-IMGn. In other words, the number of m multi-level defect images IDT1-IDTm may be n.

[0073] In an embodiment, a defective portion that does not fully extend from the first surface S1 to the second surface S2 may occur in the mask MK. For example, the defective portion may be at a layer corresponding to the kth defect image to the mth defect image. In this case, the number of m multi-level defect images may be less than n.

[0074] Figures 10 to 16 is a diagram illustrating an operation of repairing the mask MK using the laser beam LAR. Hereinafter, an operation of removing the first defect portion DFT1 using the control unit CP and the laser unit LU will be described. Fig.10 shows an enlarged plan shape of a portion of the mask MK defining the first abnormal opening E_OP1, Figures 11 to 16 A vertical cross section of the first defect portion DFT1 is shown.

[0075] Reference Fig.10 and Fig.11 , the control unit CP may control the operation of the laser unit LU based on the m multi-level defect images IDT1-IDTm. Under the control of the control unit CP, the laser unit LU may irradiate the laser beam LAR onto the first defect portion DFT1.

[0076] Under the control of the control unit CP, the laser unit LU may be repeatedly moved in the first direction DR1 and the second direction DR2. Due to the movement of the laser unit LU, the laser beam LAR may be irradiated onto the first defect portion DFT1 while repeatedly moving in the first direction DR1 and the second direction DR2. In other words, the laser beam LAR may scan in the first direction DR1 and then move in the second direction DR2 to scan in the first direction DR1 again.

[0077] The first defect portion DFT1 may be divided into m multiple layers L1-Lm corresponding to the m multi-level defect images IDT1-IDTm. The m multiple layers L1-Lm may include first to m-th layers L1 to Lm corresponding to the first to m-th defect images IDT1 to IDTm, respectively.

[0078] Based on the m multi-level defect images IDT1-IDTm, the control unit CP may control the laser unit LU so that the laser beam LAR is sequentially irradiated onto the m multilayers L1-Lm of the first defect portion DFT1. The laser beam LAR may be irradiated onto the topmost first layer L1 of the m multilayers L1-Lm, and then the laser beam LAR may be sequentially irradiated onto other layers in the m multilayers L1-Lm.

[0079] Based on the first defect image IDT1 , the control unit CP may control the laser unit LU so that the laser beam LAR is first irradiated onto the first layer L1 corresponding to the first defect image IDT1 .

[0080] The spot diameter of the laser beam LAR may be substantially equal to or greater than 0 μm and may be less than 20 μm. The wavelength of the laser beam LAR may range from 500 nm to 550 nm. The moving distance of the laser beam LAR in the first direction DR1 may be greater than the moving distance in the second direction DR2, that is, the laser beam LAR may scan along the first direction DR1, translate along the second direction DR2, and then scan along the first direction DR1.

[0081] Reference Fig.12 Based on the second defect image IDT2, the control unit CP may control the laser unit LU so that the laser beam LAR is irradiated onto the second layer L2 corresponding to the second defect image IDT2. Therefore, the second layer L2 may be removed by the laser beam LAR.

[0082] Reference Fig.13 Based on the third defect image IDT3, the control unit CP may control the laser unit LU so that the laser beam LAR is irradiated onto the third layer L3 corresponding to the third defect image IDT3. Therefore, the third layer L3 may be removed by the laser beam LAR.

[0083] Reference Fig.14 Based on the k-th defect image IDTk, the control unit CP may control the laser unit LU so that the laser beam LAR is irradiated onto the k-th layer Lk corresponding to the k-th defect image IDTk. Therefore, the k-th layer Lk may be removed by the laser beam LAR.

[0084] Reference Fig.15Based on the k+1th defect image IDTk+1, the control unit CP may control the laser unit LU so that the laser beam LAR is irradiated onto the k+1th layer Lk+1 corresponding to the k+1th defect image IDTk+1. Therefore, the k+1th layer Lk+1 may be removed by the laser beam LAR.

[0085] As described above, since the defect images IDT1-IDTm are generated based on the stereoscopic image IMG, at least one of the defect images IDT1-IDTm may include a virtual side surface VS. Since the laser beam LAR is irradiated onto the first defect portion DFT1 based on the defect images IDT1-IDTm, the laser beam LAR may be irradiated onto an area corresponding to the virtual side surface VS. However, the virtual side surface VS represents a blank area of ​​the mask MK, so that even when the laser beam LAR is irradiated onto an area corresponding to the virtual side surface VS, the process of repairing the mask MK may be performed normally. In other words, the use of the virtual side surface VS ensures that even if the k-th layer Lk to the m-th layer Lm are not accurately represented by the stereoscopic image, they can be properly removed.

[0086] Reference Fig.16 Based on the m-th defect image IDTm, the control unit CP may control the laser unit LU so that the laser beam LAR is irradiated onto the m-th layer Lm corresponding to the m-th defect image IDTm. Therefore, the m-th layer Lm may be removed by the laser beam LAR.

[0087] According to the aforementioned operation, the laser beam LAR can be sequentially irradiated onto the m multilayers L1-Lm, so that the m multilayers L1-Lm can be sequentially removed. As a result, the first defect portion DFT1 can be removed, and the first abnormal opening E_OP1 can be repaired and used as a normal opening N_OP.

[0088] In an embodiment, the laser beam LAR may be provided to the first defect portion DFT1 while repeatedly moving in the first direction DR1 and the second direction DR2, and the first defect portion DFT1 may be divided into multiple layers L1-Lm, and the multiple layers L1-Lm may be removed sequentially. Therefore, the first defect portion DFT1 may be accurately removed. As a result, the first abnormal opening E_OP1 may be accurately repaired, and the repaired first abnormal opening E_OP1 may be effectively used as a normal opening N_OP.

[0089] Fig.17 is a diagram showing an operation of removing the second defect portion DFT2. Fig.18 is a diagram showing an operation of removing the third defect portion DFT3.

[0090] Reference Fig.17 and Fig.18, the laser beam LAR may be irradiated onto the second defect portion DFT2 and the third defect portion DFT3 while repeatedly moving in the first direction DR1 and the second direction DR2. The moving distance of the laser beam LAR in the first direction DR1 may be greater than the moving distance in the second direction DR2, for example, the laser beam LAR may scan in the first direction DR1, translate in the second direction DR2, and then scan in the first direction DR1.

[0091] The second defect portion DFT2 and the third defect portion DFT3 may also be removed in a manner similar to the method of removing the first defect portion DFT1. The second defect portion DFT2 and the third defect portion DFT3 may be divided into m multiple layers, and the m multiple layers may be sequentially removed from the top layer. Therefore, the second defect portion DFT2 and the third defect portion DFT3 may be accurately removed, and the second abnormal opening E_OP2 and the third abnormal opening E_OP3 may be accurately repaired and the repaired second abnormal opening E_OP2 and the repaired third abnormal opening E_OP3 may be effectively used as a normal opening N_OP.

[0092] By using the mask repair apparatus and the mask repair method according to the embodiment, the defective portions DFT1, DFT2, and DFT3 of the mask MK may be removed in a more precise manner, and the first to third abnormal openings E_OP1, E_OP2, and E_OP3 of the mask MK may be repaired in a more precise manner.

[0093] Fig.19 is a diagram showing a process of changing the focus position of a laser beam according to an embodiment. As an example, Fig.19 Shows the corresponding Fig.10 Floor plan.

[0094] Reference Fig.19 , the laser beam LAR' is provided to the first defect portion DFT1 while repeatedly moving in the second direction DR2 and the first direction DR1. The moving distance of the laser beam LAR' in the second direction DR2 may be greater than the moving distance in the first direction DR1, for example, the laser beam LAR' may be scanned in the second direction DR2, translated in the first direction DR1, and then scanned in the second direction DR2.

[0095] exist Fig.10 In the previous embodiment, the moving distance of the laser beam LAR in the first direction DR1 can be longer, but in Fig.19 The moving distance of the laser beam LAR' in the second direction DR2 may be greater than the moving distance in the first direction DR1. Figures 10 to 16 The operation of removing the first defect portion DFT1 is performed in substantially the same manner as described.

[0096] Fig. 20 The provision of deposition material onto the substrate through normal openings is shown. Fig.21 The deposition material is provided onto the substrate through the abnormal opening. In detail, Fig.21 An example of a first abnormal opening E_OP1 defined by a first defect portion DFT1 is shown.

[0097] Reference Fig. 20 , the substrate SUB may face the first surface S1. For example, the deposition material evaporated from the crucible may be provided onto the substrate SUB through the normal opening N_OP. For convenience of explanation, the traveling direction of the deposition material is shown by a dotted arrow.

[0098] The substrate SUB may include an active area VA on which the organic light emitting layer is to be formed. The area of ​​the substrate SUB provided with the deposition material may be defined as a deposition area EA. When the deposition material is provided onto the substrate SUB through the normal opening N_OP, the deposition area EA coincides with the active area VA. Therefore, the deposition material may be normally provided onto the active area VA to form the organic light emitting layer OL on the active area VA of the substrate SUB.

[0099] The width of the normal opening N_OP may increase away from the substrate SUB along the third direction DR3. In this case, the deposition material may be provided on a shadow region SA surrounding the deposition area EA. When the normal opening N_OP is used, the shadow region SA may be set within an error range of the deposition process.

[0100] Reference Fig.21 When the deposition material is provided onto the substrate SUB through the first abnormal opening E_OP1, the deposition area EA' provided with the deposition material will be smaller than Fig. 20 Since the deposition material is abnormally provided on the substrate SUB, the deposition area EA' may be smaller than the active area VA. In this case, the organic light emitting layer OL' may be abnormally formed on the substrate SUB.

[0101] Due to the first defect portion DFT1, the deposition material may be provided to the shadow area SA' surrounding the deposition area EA'. Fig.21 The shaded area SA' will be larger than Fig. 20 Although the first abnormal opening E_OP1 is described as an example of an abnormal opening, the same problem may occur in the second abnormal opening E_OP2 and the third abnormal opening E_OP3.

[0102] In the embodiment, since the first to third abnormal openings E_OP1 , E_OP2 , and E_OP3 are accurately repaired and used as the normal openings N_OP, the mask MK may be effectively used to perform a deposition process.

[0103] By way of summary and review, in order to increase the number of organic light emitting devices, a mask having more openings is used to form an organic light emitting pattern. However, when the number of openings provided in the mask increases, it is difficult to accurately form the openings, resulting in an increase in the failure rate of the mask.

[0104] The mask repair apparatus and the mask repair method according to the embodiment can allow defective portions of the mask to be removed in a more precise manner. Therefore, abnormal openings of the mask can be repaired more precisely.

[0105] According to an embodiment, a mask repair method may include: setting a mask having a plurality of openings on a platform; generating a stereoscopic image of the mask and dividing the stereoscopic image into n first multi-level images; comparing the n first multi-level images with n second multi-level images of a normal image of the mask to generate m multi-level defect images; and sequentially removing m multiple layers of a defective portion of the mask based on the m multi-level defect images. The m multiple layers may correspond to the m multi-level defect images, respectively.

[0106] Example embodiments have been disclosed herein, and although specific terms are employed, they are used and will be interpreted only in a general and descriptive sense, and not for purposes of limitation. In some cases, as will be apparent to one of ordinary skill in the art, as of the time of filing this application, unless otherwise expressly noted, features, characteristics, and / or elements described in conjunction with a specific embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention as set forth in the claims.

Claims

1. A mask repair device, the mask repair device include: platform; a stereo imaging unit for measuring a stereo image of the mask on the platform; a control unit, comparing the stereoscopic image with a normal image of the mask to generate a defect image of the mask; as well as a laser unit, under the control of the control unit, irradiating a laser beam onto the defective portion of the mask, Wherein, based on the defect image, the control unit controls the laser unit so that the laser beam is sequentially irradiated onto m layers of the defective portion while repeatedly moving in a first direction and a second direction intersecting each other, where m is a positive integer.

2. The mask repairing device according to claim 1, in, The diameter of the spot of the laser beam is greater than 0 μm and less than 20 μm.

3. The mask repairing device according to claim 1, in, The wavelength of the laser beam is in the range of 500 nm to 550 nm.

4. The mask repairing device according to claim 1, in, Each of the normal openings among the plurality of openings defined in the mask has a width that increases in a direction from a first surface of the mask to a second surface of the mask, and The second surface faces away from the first surface and is above the first surface.

5. The mask repairing device according to claim 4, in, The stereo imaging unit is located on the mask to measure a stereo image of an exposed surface of the mask that is exposed when viewed in a top plan view of the mask, and When an edge of a first defective portion in the measured stereoscopic image is located between the first surface and the second surface, the control unit sets a virtual side surface to be perpendicular to a bottom of the mask from the edge of the first defective portion.

6. The mask repairing device according to claim 1, in, The control unit divides the stereoscopic image into n first multi-level images and compares the n first multi-level images with the n second multi-level images of the normal image to generate m multi-level defect images, and The m layers correspond to the m multi-level defect images, respectively, where n is a positive integer and m is a positive integer equal to or less than n.

7. The mask repairing device according to claim 6, in, The control unit removes portions corresponding to the n second multi-level images from the n first multi-level images to generate the m multi-level defect images.

8. The mask repairing device according to claim 6, in, The control unit controls the laser unit based on the m multi-level defect images so that the laser beam is sequentially irradiated onto the m layers, and The laser unit irradiates the laser beam to the m layers sequentially from a first layer which is the topmost layer of the m layers.

9. The mask repairing device according to claim 1, in, The laser unit scans the laser beam in the first direction and translates the laser beam in the second direction.

10. The mask repairing device according to claim 1, in, The laser unit scans the laser beam along the second direction and translates the laser beam along the first direction.

Images