Substrate processing device

Abstract

The present invention provides a substrate processing device. The substrate processing device comprises: a processing container; a mounting table, which is arranged inside the processing container and can mount a substrate; and a component forming an anode arranged between the processing container and the mounting table, the component having a flow path for a heat exchange medium to flow. The present invention can improve thermal responsiveness.

Description

Technical Field

[0001] The invention relates to a substrate processing device. Background Art

[0002] For example, there is known a substrate processing apparatus for performing predetermined processing on a substrate such as a wafer.

[0003] Patent document 1 discloses a substrate processing device, which includes: a cylindrical chamber having an opening; a deposition shielding member arranged along the inner wall of the chamber and having an opening at a position corresponding to the opening of the chamber; and an opening and closing member for opening and closing the opening of the deposition shielding member.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2015-126197 Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] In one aspect, the present invention provides a substrate processing apparatus having improved thermal responsiveness.

[0009] Technical solutions for solving technical problems

[0010] In order to solve the above-mentioned technical problem, according to one method, a substrate processing device is provided, which includes: a processing container; a loading table, which is arranged inside the above-mentioned processing container and can load the substrate; and a component for forming an anode arranged between the above-mentioned processing container and the above-mentioned loading table, and the above-mentioned component has a flow path for the flow of heat exchange medium.

[0011] Effects of the Invention

[0012] In one aspect, a substrate processing apparatus having improved thermal responsiveness can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment.

[0014] Figure 2 This is a perspective view showing an example of an opening and closing member of a plasma processing apparatus according to an embodiment.

[0015] Figure 3 This is a partial cross-sectional perspective view showing an example of the internal structure of an opening and closing member of a plasma processing apparatus according to an embodiment.

[0016] Figure 4 This is a perspective view showing an example of the simulation result of the temperature distribution.

[0017] Figure 5 It is a schematic diagram showing the flow of the refrigerant in the flow path.

[0018] Figure 6 This is a cross-sectional view showing a portion of the internal structure of a baffle of a plasma processing apparatus according to an embodiment.

[0019] Figure 7 (a) means Figure 6 The HH cross section, Figure 7 (b) means Figure 6 Figure 2. Section II of FIG.

[0020] Description of Reference Numerals

[0021] 2 Processing container

[0022] 2a Opening (first opening)

[0023] 5. Workbench (loading table)

[0024] 20 baffle (component)

[0025] 20a Gap

[0026] 22 Opening and closing parts (components)

[0027] 23 Sediment shield (component)

[0028] 23a Opening (second opening)

[0029] 71, 73 Introduction tube

[0030] 72, 74 discharge pipe

[0031] S1 Plasma Processing Chamber

[0032] S2 Exhaust space

[0033] 201~203 flow path

[0034] 221, 231 flow path

[0035] 221a Outflow surface

[0036] 222 Side wall

[0037] 223 Rib

[0038] 224 Housing parts

[0039] 225 Separator

[0040] 206, 226 Heat exchange promoting components

[0041] 227 Inflow channel

[0042] 228, 229 outflow pathways. DETAILED DESCRIPTION

[0043] Hereinafter, the mode for implementing the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0044] [Plasma processing device]

[0045] First, use Figure 1 A plasma processing apparatus (substrate processing apparatus) according to one embodiment will be described. Figure 1 It is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment.

[0046] The plasma processing apparatus performs a predetermined process (for example, etching process, film forming process, cleaning process, ashing process, etc.) on a substrate such as a wafer W.

[0047] The plasma processing apparatus includes a substantially cylindrical processing container 2 formed of, for example, aluminum having an anodized surface. The processing container 2 is grounded.

[0048] A substantially cylindrical support table 4 is provided at the bottom of the processing chamber 2 via an insulating plate 3 such as ceramic. A table 5 is provided on the support table 4 to hold a wafer W and function as a lower electrode. The table 5 is also referred to as a mounting table 5 .

[0049] A cooling chamber 7 is provided inside the support table 4. A refrigerant is introduced into the cooling chamber 7 via a refrigerant introduction pipe 8. The refrigerant circulates in the cooling chamber 7 and is discharged from a refrigerant discharge pipe 9. A gas passage 14 for supplying a heat exchange medium (e.g., He gas, etc.) to the back side of the wafer W is formed in the insulating plate 3, the support table 4, the work table 5, and the electrostatic chuck 11. The heat of the work table 5 is transferred to the wafer W by the heat exchange medium, and the wafer W is maintained at a predetermined temperature.

[0050] A circular electrostatic chuck 11 having a diameter substantially the same as that of the wafer W is provided at the center of the upper side of the worktable 5. An adsorption electrode 12 is disposed between the electrostatic chuck 11 and the insulating material. The adsorption electrode 12 is connected to a DC power supply 13, and a DC voltage is applied from the DC power supply 13, thereby electrostatically adsorbing the wafer W to the electrostatic chuck 11 by Coulomb force.

[0051] A circular peripheral ring (also called a focus ring) 15 is arranged at the upper peripheral edge of the workbench 5 so as to surround the wafer W placed on the electrostatic chuck 11. The peripheral ring 15 is formed of a conductive material such as silicon, and has the function of improving the uniformity of the plasma. The side surfaces of the workbench 5 are covered by a workbench side surface covering member 60.

[0052] A gas shower head 40 is provided above the workbench 5. The gas shower head 40 is provided opposite to the workbench 5 functioning as a lower electrode, and also functions as an upper electrode. The gas shower head 40 is supported on the top of the processing container 2 via an insulating material 41. The gas shower head 40 includes an electrode plate 24 and an electrode support 25 of a conductive material supporting the electrode plate 24. The electrode plate 24 is made of a conductor or semiconductor such as silicon or SiC, and has a plurality of gas holes 45. The electrode plate 24 forms an opposing surface opposite to the workbench 5.

[0053] A gas inlet 26 is provided at the center of the electrode support 25, and the gas inlet 26 is connected to a gas supply pipe 27. The gas supply pipe 27 is connected to a processing gas supply source 30 via an on-off valve 28 and a mass flow controller (MFC) 29. The processing gas supply source 30 supplies processing gas for plasma processing such as etching and cleaning gas for cleaning processing. The gas is flow-controlled by the mass flow controller (MFC) 29, and is transported to the gas diffusion chamber 44 via the gas supply pipe 27 and the gas inlet 26 according to the opening and closing of the on-off valve 28. The gas diffuses in the gas diffusion chamber 44 and is introduced into the interior of the processing container 2 from a plurality of gas holes 45.

[0054] A deposit shield 23 is detachably provided in the processing container 2, and is used to prevent reaction products generated during plasma processing such as etching from adhering to the inner wall of the processing container 2. The deposit shield 23 is grounded. In addition, the deposit shield 23 may also be provided in the exhaust space S2 on the outer peripheral side of the support table 4 and the workbench 5.

[0055] The baffle plate 20 formed in an annular shape is provided between the deposit shielding member 23 and the stage 5. For the deposit shielding member 23 and the baffle plate 20, a material obtained by coating an aluminum material with a ceramic such as alumina or yttrium oxide (Y2O3) can be appropriately used.

[0056] The baffle 20 has the function of making the gas flow uniform and uniformly exhausting the gas from the plasma processing chamber S1 to the exhaust space S2. The plasma processing chamber S1 is a plasma generation space (plasma processing space) formed by the workbench 5, the gas shower head 40, the deposit shield 23 and the baffle 20. Inside the plasma processing chamber S1, a predetermined plasma is generated by the gas supplied from the gas shower head 40, and a predetermined process is performed on the wafer W by the plasma.

[0057] A portion of the plasma processing chamber S1 can be opened and closed by the opening and closing member 22. That is, an opening portion 2a for carrying the wafer W into and out of the plasma processing chamber S1 is provided in the processing container 2. A gate valve GV for opening and closing the opening portion 2a is provided on the side wall of the processing container 2. In addition, an opening portion 23a is provided in the sediment shielding member 23 at a position corresponding to the opening portion 2a. The opening and closing member 22 is driven up and down by the elevator 55 to open and close the opening portion 23a. The opening and closing member 22 is grounded. When the wafer W is carried in and out, the gate valve GV is opened, and the opening and closing member 22 is opened by driving the elevator 55 to lower the opening and closing member 22, and the wafer W is carried into the plasma processing chamber S1 from the opening of the opening and closing member 22, or the wafer W is carried out from the plasma processing chamber S1.

[0058] A flow path 221 (also referred to below) through which a refrigerant (heat exchange medium) flows is provided inside the opening and closing member 22. Figure 3 ). The refrigerant is introduced into the flow path 221 via the inlet pipe 71. The refrigerant circulates in the flow path 221 and is discharged from the discharge pipe 72. In addition, a flow path 231 for the refrigerant to circulate is provided inside the deposit shielding member 23. The refrigerant is introduced into the flow path 23 via the inlet pipe 73. The refrigerant circulates in the flow path 231 and is discharged from the discharge pipe 74. In addition, a flow meter for detecting the flow rate of the refrigerant, a regulator for adjusting the flow rate of the refrigerant, etc. may be provided. The control device 100 described later controls the flow rate of the refrigerant supplied to the flow path 221 according to the heat input amount of the plasma from the plasma processing chamber S1 to the opening and closing member 22. Thus, the temperature of the opening and closing member 22 can be made within the desired temperature range. Similarly, the control device 100 controls the flow rate of the refrigerant supplied to the flow path 231 according to the heat input amount of the plasma from the plasma processing chamber S1 to the deposit shielding member 23. Thus, the temperature of the deposit shielding member 23 can be made within the desired temperature range. In addition, the type of the refrigerant is not limited, and for example, it may be a gas such as dry air, or a liquid such as cooling water.

[0059] An exhaust space S2 for exhaust is formed below the baffle plate 20 at the lower side of the plasma processing chamber S1 , thereby preventing plasma from entering the exhaust space S2 at the downstream side of the baffle plate 20 .

[0060] The first high frequency power source 51 generates high frequency power HF for plasma generation. The first high frequency power source 51 generates high frequency power HF with a frequency of 60 MHz, for example. The first high frequency power source 51 is connected to the gas shower head 40 via a matching device 52. The matching device 52 is a circuit for matching the output impedance of the first high frequency power source 51 with the input impedance of the load side (upper electrode side).

[0061] The second high-frequency power supply 53 generates a high-frequency bias power LF for introducing ions into the wafer W. The second high-frequency power supply 53 generates a high-frequency bias power LF with a frequency of, for example, 20 MHz. The second high-frequency power supply 53 is connected to the workbench 5 via a matching device 54. The matching device 54 is a circuit for matching the output impedance of the second high-frequency power supply 53 with the input impedance of the load side (lower electrode side).

[0062] The bottom of the processing container 2 is connected to an exhaust pipe 31, and the exhaust pipe 31 is connected to an exhaust device 35. The exhaust device 35 has a vacuum pump such as a turbomolecular pump, which can evacuate the processing container 2 to a predetermined reduced pressure atmosphere. In addition, a gate valve GV is provided on the side wall of the processing container 2, and the wafer W is sent into and out of the processing container 2 by opening and closing the gate valve GV.

[0063] The plasma processing apparatus is controlled by a control device 100. The control device 100 is a computer having a communication interface (I / F) 105, a CPU 110, a memory 115, and the like. The memory 115 stores a control program and a recipe, wherein the control program is used to control various plasma processes such as etching performed by the plasma processing apparatus by the CPU 110, and the recipe is a program that causes each part of the plasma processing apparatus to perform a process according to a process condition. The CPU 110 controls each part of the plasma processing apparatus (elevator 55, exhaust device 35, DC power supply 13, first high frequency power supply 51, second high frequency power supply 53, process gas supply source 30, etc.) using the recipe and control program stored in the memory 115.

[0064] Next, use Figure 2 and Figure 3 , the opening and closing member 22 and the sediment shielding member 23 having the flow paths 221 and 231 are further described. In addition, in the following description, the opening and closing member 22 having the flow path 221 is used as an example for description. In addition, the structure of the flow path 231 of the sediment shielding member 23 is the same as the structure of the flow path 221 of the opening and closing member 22, and repeated description is omitted.

[0065] Figure 2 It is a perspective view showing an example of the opening and closing tool 22 of the plasma processing apparatus according to one embodiment. Figure 3 1 is a partial cross-sectional perspective view showing an example of the internal structure of the opening and closing member 22 of the plasma processing device according to one embodiment. Figure 3 This is a diagram showing a cutaway view of the side wall portion 222 on the side facing the plasma processing chamber S1.

[0066] like Figure 2As shown, the opening and closing member 22 has a side wall portion 222 and a rib 223. The side wall portion 222 is a component for closing the opening portion 23a of the sediment shielding member 23, and is bent into an arc shape along the shape of the cylindrical sediment shielding member 23. The rib 223 is formed in a manner extending from the lower end side of the side wall portion 222 toward the center direction of the processing container 2. The lower surface side of the rib 223 is supported by the lifter 55. When the opening portion 23a is closed by the opening and closing member 22, the upper surface of the rib 223 can be in contact with the sediment shielding member 23. In addition, the upper end of the side wall portion 222 can be in contact with the sediment shielding member 23. As a result, the sediment shielding member 23 is electrically connected to the opening and closing member 22, and the opening and closing member 22 is grounded.

[0067] like Figure 3 As shown, a flow path 221 for refrigerant to flow is formed inside the side wall portion 222 of the opening and closing member 22. In other words, the opening and closing member 22 includes: a shell member 224 having a space inside and forming a shell; a partition member 225 disposed inside the shell member 224 and forming the flow path 221; and a heat exchange promotion member 226 disposed on the flow path 221.

[0068] The housing member 224 is provided with an inflow passage 227 and outflow passages 228 and 229 that communicate the internal space with the outside. Figure 3 In the example shown, an inflow passage 227 is formed at the center and at the lower side in the circumferential direction, and outflow passages 228 and 229 are formed at the outer side and at the lower side in the circumferential direction.

[0069] The partition member 225 is disposed inside the housing member 224 to form a flow path 221 from the inflow path 227 to the outflow paths 228 and 229. Figure 3 In the figure, a structure is shown in which one end of the flow path 221 is connected to the inflow path 227, and the flow path 221 is branched in the middle to go back and forth up and down and go to the circumferential outside. In addition, a structure is shown in which the other end of the flow path 221 is connected to the outflow paths 228 and 229, respectively, but it is not limited to this.

[0070] The heat exchange promoting component 226 is disposed in the flow path 221 formed by the shell component 224 and the partition component 225. In other words, the heat exchange promoting component 226 is configured in a manner that hinders the flow of the refrigerant flowing in the flow path 221. The heat exchange promoting component 226 increases the contact area with the refrigerant flowing in the flow path 221, and promotes heat exchange between the opening and closing member 22 and the refrigerant. In addition, the heat exchange promoting component 226 supports the shell component 224 from the inside. Thereby, the strength and rigidity of the opening and closing member 22 with a hollow structure can be ensured. The heat exchange promoting component 226 can have, for example, a mesh-like or columnar structure, or can have a lattice structure (lattice structure). In addition, the shape and configuration of the heat exchange promoting component 226 are not limited thereto.

[0071] Although not shown in the figure, the heat exchange promoting member 226 may have a structure in which a space is provided inside the rib 223, and the internal space has a lightweight structure that ensures the strength and rigidity of a mesh or columnar structure, a lattice structure, a honeycomb structure, or the like.

[0072] Figure 4 It is a perspective view showing an example of a simulation result of the temperature distribution of the refrigerant in the flow path 221 . Figure 5 2 is a schematic diagram showing the flow of the refrigerant in the flow path 221. Figure 4 (a) and Figure 5 (a) shows a case where a heat exchange promoting component 226 is provided in the flow path 221. Figure 4 (b) and Figure 5 (b) shows the case where the heat exchange promoting member 226 is not provided. Figure 4 The simulation results are shown in the figure with darker shading as the temperature increases. Figure 5 In the diagram, arrows are used to indicate the flow of refrigerant.

[0073] The following simulation was performed: the heat input amount from the plasma processing chamber S1 to the shutter 22 was set to 1 W / m 2 , the temperature distribution of the refrigerant when dry air is used as the refrigerant and flows from the inlet passage 227 to the outlet passages 228 and 229 is simulated. Figure 3 As shown, the flow path 221 has a bilaterally symmetrical shape, and therefore only one side is simulated. Figure 4 Indicated by Figure 3 The simulation results for the area shown by the dashed line A.

[0074] like Figure 4 As shown in (b), it can be confirmed that the temperature of the refrigerant on the outflow surface 221a increases compared to the temperature of the refrigerant on the inflow surface by allowing the refrigerant to flow through the flow path 221. Specifically, the temperature of the refrigerant on the outflow surface 221a increases by a maximum of 0.2°C compared to the temperature of the refrigerant on the inflow surface. In other words, it can be confirmed that the opening and closing member 22 can be cooled.

[0075] In addition, if Figure 4 As shown in (a), it can be confirmed that by configuring the heat exchange promotion member 226 in the flow path 221, the temperature of the refrigerant on the outflow surface 221a is Figure 4Specifically, the temperature of the refrigerant on the outflow surface 221a increased by a maximum of 0.43°C compared to the temperature of the refrigerant on the inflow surface. That is, it can be confirmed that the heat exchange performance between the opening and closing member 22 and the refrigerant is improved by configuring the heat exchange promotion member 226 in the flow path 221.

[0076] In addition, in Figure 4 The corner area shown by the dotted line C in (b) forms an area where the temperature of the refrigerant becomes high. Figure 5 As shown in (b), when the refrigerant flows from the inlet passage 227 into the flow path 221, the refrigerant mainly flows in the approximate center of the flow path 221, and a vortex is generated in the area indicated by the dotted line E. In the area indicated by the dotted line F between the flow of the vortex and the corner of the flow path 221, the refrigerant precipitates. The refrigerant in the corner increases in temperature due to heat exchange with the opening and closing member 22, and is difficult to flow to the outflow surface 221a due to precipitation. Therefore, as shown in FIG. Figure 4 As shown in (b), in the corner region indicated by the dotted line C, a region where the temperature of the refrigerant becomes high is formed.

[0077] In this regard, a heat exchange promoting component 226 is arranged in the flow path 221, such as Figure 5 The rectifying effect is achieved as shown in (a). Figure 5 As shown in (a), the heat exchange promoting member 226 is arranged in a manner that hinders the flow of the refrigerant. As a result, the flow of the refrigerant in the flow path 221 is branched by the heat exchange promoting member 226. The branched refrigerant is also supplied to the corner area shown by the dotted line D. Therefore, the refrigerant supplied to the corner area flows toward the outflow surface 221a. Figure 4 As shown in (a), in the corner region indicated by the dotted line B, the region where the temperature of the refrigerant becomes high is eliminated.

[0078] As described above, the plasma processing apparatus according to one embodiment includes the shutter 22 having the flow path 221 and the deposit shielding member 23 having the flow path 231 , and the refrigerant flows through the flow paths 221 and 231 .

[0079] However, as the device structure of the chip W is miniaturized and highly integrated, the contact holes and the like are developing toward a high aspect ratio. Therefore, in etching with a high aspect ratio, the high-frequency bias power LF is being developed to a low frequency and a high power. Therefore, the potential difference between the switch 22 and the deposit shielding member 23, which are at ground potential, and the plasma becomes larger. The increase and acceleration of consumption due to ion sputtering and the temperature rise of the components due to the increase in heat input from the plasma (deterioration of temperature controllability) have become technical problems.

[0080] In this regard, according to the plasma processing apparatus of one embodiment, the shutter 22 and the deposit shielding member 23 can be temperature-controlled by flowing the refrigerant in the flow paths 221 and 231. Thus, for example, even if the heat input to the shutter 22 and the deposit shielding member 23 increases due to the high-frequency bias power LF, the shutter 22 and the deposit shielding member 23 can be cooled so as to be within a predetermined temperature range.

[0081] In addition, the opening and closing member 22 and the deposit shielding member 23 can adopt a hollow structure, which can be made lighter than a solid (middle-solid) opening and closing member and deposit shielding member. By making the opening and closing member 22 and the deposit shielding member 23 lighter, the heat capacity is also reduced. As a result, the thermal responsiveness when the temperature of the opening and closing member 22 and the deposit shielding member 23 is controlled by making the refrigerant flow in the flow paths 221 and 231 is improved. As a result, the opening and closing member 22 and the deposit shielding member 23 can be quickly brought into the target temperature range, so the productivity of substrate processing of the plasma processing device is also improved.

[0082] In addition, when maintaining the plasma processing apparatus, for example, the deposit shielding member 23 needs to be removed from the processing container 2, but by making the deposit shielding member 23 lightweight, the workability can be improved. In addition, by making the shutter 22, which is a movable member, lightweight, the output of the lifter 55 can be reduced. In addition, the material costs of the shutter 22 and the deposit shielding member 23 can be reduced.

[0083] In addition, by providing the heat exchange promoting member 226 in the flow paths 221 and 231, the contact area with the refrigerant flowing in the flow paths 221 and 231 is increased, thereby improving the heat exchange performance. In addition, on the downstream side of the heat exchange promoting member 226 configured as an obstacle in the flow path 221, a flow of the refrigerant that is peeled off and then attached is formed, thereby improving the heat exchange performance. As a result, the thermal responsiveness when the temperature of the opening and closing member 22 and the sediment shielding member 23 is controlled by allowing the refrigerant to flow in the flow paths 221 and 231 is improved. In addition, by providing the heat exchange promoting member 226 in the flow paths 221 and 231, as Figure 5 (a) and Figure 5 As shown in (b) in contrast, the occurrence of precipitation at the corners of the flow path 221 is suppressed. Thus, the uniformity of the temperature distribution of the shutter 22 and the deposit shielding member 23 can be improved.

[0084] Furthermore, by forming the heat exchange promoting member 226 inside the flow paths 221 and 231 having a hollow structure, it is possible to ensure the strength and rigidity of the shutter 22 and the deposit shielding member 23 .

[0085] In addition, if Figure 1As shown in the figure, the structure in which the flow path is provided in the shutter 22 and the deposit shielding member 23 is described, but the present invention is not limited thereto, and a structure in which the flow path is provided in at least one of the shutter 22 and the deposit shielding member 23 may also be adopted.

[0086] For example, the structure may be such that the flow path 231 is provided only in the deposit shielding member 23. The deposit shielding member 23 has a substantially cylindrical shape and is arranged so as to surround the entire plasma processing chamber S1. In this regard, the shutter member 22 is arranged in a partial range of the substantially cylindrical shape. Therefore, the flow path 231 is provided in the deposit shielding member 23 so as to surround the entire plasma processing chamber S1.

[0087] In addition, for example, a structure in which the flow path 221 is provided only in the opening and closing member 22 may be used. The deposit shielding member 23 is in contact with other components such as the processing container 2, and the input heat from the plasma processing chamber S1 is dissipated to other components. On the other hand, the opening and closing member 22 is a movable member, and therefore, compared with the deposit shielding member 23, the contact with other components is less, and the heat dissipation to other components is also reduced. Therefore, there is a possibility that the temperature of the opening and closing member 22 is higher than the temperature of the deposit shielding member 23. In this regard, by providing the flow path 221 in the opening and closing member 22, for example, the temperature of the opening and closing member 22 can be made consistent with the temperature of the deposit shielding member 23. As a result, the uniformity of the temperature of the plasma processing chamber S1 is improved.

[0088] Next, the manufacturing method of the opening and closing member 22 and the sediment shielding member 23 is described. The opening and closing member 22 and the sediment shielding member 23 form flow paths 221 and 231 inside thereof, thereby forming a hollow structure. Therefore, it is preferred that the opening and closing member 22 and the sediment shielding member 23 are manufactured by 3D printing technology and additive manufacturing technology. Specifically, a stacking forming technology using metal materials can be used. For example, a forming technology that forms by irradiating powdered metal with lasers and electron beams to sinter it, a forming technology that forms by supplying powdered metal and wires and using lasers and electron beams to melt and deposit the materials, etc. can be used. In addition, the above-mentioned forming method is an example and is not limited to this.

[0089] In addition, in the opening and closing member 22 and the sediment shielding member 23, the shell member 224 constituting the shell, the partition member 225 for forming the flow path 221, and the heat exchange promotion member 226 provided in the flow path 221 are described as being made of the same material. However, the present invention is not limited thereto, and different types of materials may be used. For example, the shell member 224 and the partition member 225 may be made of aluminum, and the heat exchange promotion member 226 may be formed of a metal material with high thermal conductivity (e.g., Cu). In addition, the heat exchange promotion member 226 may also be made of a metal material with high strength.

[0090] The shutter 22 and the deposit shielding member 23 described above are disposed between the processing container 2 and the stage 5 , have a flow path through which a heat exchange medium flows, and are examples of members forming an anode.

[0091] The stage 5 is a member forming a cathode, and the member forming an anode opposite to the member forming a cathode includes an upper electrode (gas showerhead 40 ) and a baffle 20 in addition to a shutter 22 and a deposit shielding member 23 .

[0092] [Baffle]

[0093] Below, refer to Figure 6 and Figure 7 Next, the baffle 20 as another example of a member forming the anode will be described. Figure 6 1 is a cross-sectional view showing a part of the internal structure of the baffle plate 20 of the plasma processing apparatus according to the embodiment. Figure 7 (a) means Figure 6 (b) is a diagram of the HH cross section, Figure 7 (b) means Figure 6 (b) Diagram of section II.

[0094] The baffle 20 is formed in an annular shape. Figure 6 (a) shows a part of the cross section when the baffle plate 20 is cut in the horizontal direction. Figure 6 (b) Lieutenant General Figure 6 The region G of (a) is shown in an enlarged manner. The baffle plate 20 has a plurality of slits 20a. The plurality of slits 20a are all identical and are arranged substantially in parallel. The plurality of slits 20a each have a long side direction in the width direction of the baffle plate 20 and are arranged at equal intervals in the circumferential direction. Each slit 20a penetrates the baffle plate 20.

[0095] Inside the baffle 20, a flow path 201 is formed between each slit 20a. The flow path 201 has two ends near the inner end of each slit 20a, one end of which serves as an inlet IN and the other end of which serves as an outlet OUT. In addition, the flow path 201 is formed to form a U-shaped bend outside the outer end of each slit 20a. That is, the flow path 201 is formed in a U shape along each slit 20a, and meanders between the plurality of slits 20a. Inside the baffle 20, two annular flow paths 202 and a flow path 203 are formed inside each slit 20a.

[0096] The U-shaped flow path 201 described above is connected to the flow path 202 at the inlet IN at one end, and is connected to the flow path 203 at the outlet OUT at the other end. The refrigerant output from the cooling unit (not shown) flows in the flow path 202, and is branched to the multiple flow paths 201 at the multiple inlet INs. The branched refrigerant flows in the flow paths 201 formed around each slit 20a, merges into the flow path 203 at the multiple outlets OUT, and returns to the cooling unit again. Thus, by making the refrigerant flow in the order of flow path 202 → flow path 201 → flow path 203, the temperature of the entire baffle 20 can be controlled, and the thermal responsiveness is improved.

[0097] In addition, the direction of the refrigerant flowing in the flow path 202 and the flow path 203 is not limited to Figure 6 In the direction shown in (b). In addition, the baffle 20 is formed into a hollow structure, and the shape of the formed flow paths 201 to 203 is not limited thereto. For example, the inlet IN and the outlet OUT may be reversed, and the refrigerant output from the cooling unit flows in the order of flow path 203 → flow path 201 → flow path 202. The flow paths 201 to 203 may also have a flow meter for detecting the flow rate of the refrigerant, a regulator for adjusting the flow rate of the refrigerant, etc.

[0098] In addition, the flow path 201 is not limited to being arranged around the entire slit 20a of the baffle 20. Regarding the flow path 201, for example, the flow path 201 can be arranged in a manner to surround two or more adjacent slits 20a among the plurality of slits 20a, or it can be arranged at a position symmetrical with respect to the center of the baffle 20. In addition, the flow path 202 and / or the flow path 203 can also be arranged on the inner side of the inner peripheral end of the slit 20a. In addition, the flow path can also be arranged on the outer side of the outer peripheral end of the slit 20a, and the flow paths described above can also be combined. However, in order to improve temperature controllability and thermal responsiveness, it is preferred that the flow paths 201 are equally spaced and arranged as closely as possible.

[0099] A plurality of heat exchange promoting members 206 are dispersedly provided inside the flow path 201. The heat exchange promoting members 206 may be rod-shaped, plate-shaped, or may have other structures (such as a lattice structure) to achieve weight reduction. Figure 6 (b), the heat exchange promoting components 206 are alternately arranged near the outer side surface and the inner side surface of the flow path 201 in a manner that crosses each other inside the flow path 201. However, it is not limited to this, and the heat exchange promoting components 206 can be arranged at a position that hinders the flow of the refrigerant flowing in the flow path 201. The heat exchange promoting components 206 increase the contact area with the refrigerant flowing in the flow path 201, thereby promoting heat exchange between the baffle 20 and the refrigerant. In this way, the thermal responsiveness can be further optimized. In addition, the shape and configuration of the heat exchange promoting components 206 are not limited to this.

[0100] The heat exchange promoting member 206 provided in the main body 20b of the baffle 20 and the flow path 201 may be made of the same material or different materials. For example, aluminum may be used for the baffle main body, and a metal material with high thermal conductivity (e.g., Cu) may be used for the heat exchange promoting member 206. In addition, a metal material with high strength may be used for the heat exchange promoting member 206.

[0101] express Figure 6 (b) HH cross section Figure 7 In (a), the flow path 201 before the U-bend is shown. The flow path 201 before the U-bend is formed along the upper surface just below the upper surface of the baffle 20. The flow path 201 is formed at the same height as the flow path 202, and the flow path 201 and the flow path 202 intersect approximately vertically at the position of the inlet IN. The refrigerant flowing in the flow path 202 flows into the flow path 201 at the inlet IN.

[0102] express Figure 6 (b) Section II Figure 7 In (b), the flow path 201 after the U-bend is illustrated. The flow path 201 after the U-bend is formed along the upper surface just below the upper surface of the baffle 20, and its front portion goes to the discharge port OUT and has a step, formed at the same height as the discharge port OUT. Thus, the flow path 201 before the step is formed at a position higher than the flow path 203, and the flow path 201 after the step is formed at the same height as the flow path 203, and the flow path 201 and the flow path 203 intersect approximately vertically at the position of the discharge port OUT. Thus, the refrigerant flowing in the flow path 201 merges at the discharge port OUT and easily flows into the flow path 203 formed at a position lower than the flow path 201 before the step.

[0103] The heat exchange promoting member 206 is closely arranged in the flow path 201 before the U-shaped bend than the flow path 201 after the U-shaped bend. Thus, the contact area with the refrigerant flowing in the flow path 201 before the U-shaped bend than the flow path 201 after the U-shaped bend is increased, and the heat exchange between the baffle 20 and the refrigerant is promoted. The heat exchange promoting member 206 is also provided in the flow path 201 after the U-shaped bend, thereby promoting the heat exchange between the baffle 20 and the refrigerant.

[0104] In addition, the configuration of the heat exchange promotion component 206 is not limited thereto. For example, the heat exchange promotion component 206 may be arranged at the same intervals throughout the flow path 201. In addition, the heat exchange promotion component 206 may be of the same shape or of different shapes. In addition, the heat exchange promotion component 206 may be arranged crosswise with each other in the flow path 201, may be arranged in parallel, or may be arranged in other configurations.

[0105] By using the opening and closing member 22, the deposit shielding member 23, and the baffle 20 of the plasma processing apparatus of the embodiment, the temperature of the entire anode-forming member can be controlled by flowing the refrigerant in the flow paths 221, 231, and the flow paths 201 to 203. Thus, for example, even if the heat input amount to the anode-forming members such as the opening and closing member 22, the deposit shielding member 23, and the baffle 20 increases due to the high power of the high-frequency bias power LF, the anode-forming member can be cooled so that the anode-forming member is within a predetermined temperature range. In addition, a part of the anode-forming member, such as the baffle 20, the opening and closing member 22, and the deposit shielding member 23, can also be controlled to a locally different temperature.

[0106] Regarding the manufacturing method of the baffle 20, flow paths 201 to 203 are formed inside the baffle 20 to form a hollow structure. Therefore, it is preferred that the baffle 20 is manufactured by 3D printing technology or additive manufacturing technology. Specifically, a stacking forming technology using metal materials can be used. For example, a forming technology that forms by irradiating powdered metal with lasers and electron beams to sinter it, a forming technology that forms by supplying powdered metal and metal wires and using lasers and electron beams to melt and deposit the materials, etc. can be used. In addition, the above-mentioned forming method is an example and is not limited to this.

[0107] Although the embodiments of the substrate processing apparatus have been described above, the present invention is not limited to the above embodiments, and various modifications and improvements can be made within the scope of the gist of the present invention described in the scope of the patent application.

[0108] The case where the opening and closing member 22 and the deposit shielding member 23 are cooled by flowing the refrigerant in the flow path 221 of the opening and closing member 22 and the flow path 231 of the deposit shielding member 23 is described. However, the present invention is not limited thereto, and the opening and closing member 22 and the deposit shielding member 23 may be heated by flowing a high-temperature refrigerant. In addition, the opening and closing member 22 and the deposit shielding member 23 may also have a heater. Thus, the temperature control can be performed so that the opening and closing member 22 and the deposit shielding member 23 are at a predetermined temperature.

[0109] Furthermore, although the slit 20 a is exemplified as the hole provided in the baffle plate 20 , the present invention is also applicable to the baffle plate 20 of a hole type other than a slit hole, such as a perfect circle or an elliptical circular hole.

[0110] The plasma processing device of one embodiment can be applied to ALD (Atomic Layer Deposition) devices, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP), etc. In addition, a plasma processing device is cited as an example of a substrate processing device for description, but the substrate processing device only needs to perform a prescribed process (e.g., film forming process, etching process, etc.) on the substrate, and is not limited to a plasma processing device. For example, it can be a CVD device.

[0111] In this specification, a chip (semiconductor chip) W is listed as an example of a substrate, but the substrate is not limited to this, and can be various substrates used for LCD (Liquid Crystal Display), FPD (Flat Panel Display), photomasks, CD substrates, printed circuit boards, etc.

Claims

1. A substrate processing device, characterized in that: include: a plasma processing chamber having a first opening; a hollow sediment shielding member disposed in the plasma processing chamber to define a plasma processing space, the hollow sediment shielding member having a second opening at a position corresponding to the first opening, and the hollow sediment shielding member being grounded; and a hollow opening and closing member for opening and closing the second opening, the hollow opening and closing member being in contact with the hollow deposit shielding member and being grounded when closing the second opening, and defining the plasma processing space together with the hollow deposit shielding member, Each of the hollow sediment shielding member and the hollow opening and closing member has: a housing member having an inner space formed on a surface exposed to the plasma processing space; A partition member forming a flow path for a heat exchange medium to flow in the entire area of ​​the internal space; and A heat exchange promoting member disposed in the flow path, The heat exchange promoting member has a lattice structure to support the housing member from the inside, The housing member and the partition member are formed of a first metal material, The heat exchange promoting member is formed of a second metal material having higher thermal conductivity and / or higher strength than the first metal material.

2. The substrate processing device according to claim 1, characterized in that: Also includes: A mounting table disposed in the plasma processing chamber; and a baffle plate disposed between the mounting platform and the hollow sediment shielding member, The baffle plate includes an additional flow path through which a heat exchange medium flows, and an additional heat exchange promoting member provided in the additional flow path.

3. The substrate processing device according to claim 2, characterized in that: The baffle is formed of the first metal material, The additional heat exchange promoting member is formed of the second metal material.

4. The substrate processing device according to any one of claims 1 to 3, characterized in that: The first metal material is aluminum, and the second metal material is copper.

5. The substrate processing device according to claim 1, wherein: The hollow sediment shielding member and the hollow opening and closing member can be formed by 3D printing technology or additive manufacturing technology.

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