Apparatus and method for manufacturing wafers

Abstract

Embodiments of the present disclosure relate to apparatuses and methods for manufacturing wafers. Various embodiments provide apparatuses and methods for manufacturing wafers, such as SiC wafers. The apparatuses include a support having a plurality of arms for supporting a substrate. The arms allow for minimization of physical contact between the support and the substrate. As a result, when the substrate is melted, the surface tension between the arms and the melted material is reduced, and the melted material will be less likely to adhere to the support.

Description

Technical Field

[0001] This disclosure relates to apparatus and methods for manufacturing semiconductor wafers. Background Technology

[0002] Semiconductor devices are typically fabricated in silicon wafers. However, silicon carbide (SiC) wafers have become increasingly popular, at least in part due to the chemical and physical properties of SiC. For example, SiC typically has a higher bandgap than silicon. As a result, even at relatively thin thicknesses, SiC exhibits a higher breakdown voltage than silicon. Therefore, SiC is desirable for applications involving high voltages, such as power applications.

[0003] SiC can exist in a variety of different crystal structures or polytypes. The most common polytypes are cubic polytypes (3C polytypes), hexagonal polytypes (4H and 6H polytypes), and rhombic polytypes (15R polytypes). 3C SiC wafers have unique properties compared to other wafer polytypes. For example, compared to 4H SiC wafers, 3C SiC wafers typically have lower trap density and / or higher channel electron mobility. Summary of the Invention

[0004] This disclosure relates to apparatus and methods for manufacturing semiconductor wafers such as silicon carbide (SiC) wafers.

[0005] According to one embodiment, the apparatus includes a body, a heater, an inlet pipe, an outlet pipe, a support, and a container. The support is located on the container and within the reaction chamber. The support includes multiple arms for supporting a substrate or wafer, such as a silicon substrate. The arms allow for minimal physical contact between the support and the substrate. As a result, when the substrate melts, the surface tension between the arms and the molten material decreases, and the molten material is less likely to adhere to the support itself.

[0006] According to one embodiment, a method is used to manufacture a SiC wafer. The method includes placing a silicon substrate on a support and forming a first layer of silicon carbide on the silicon substrate by exposing it to a precursor flow (i.e., heteroepitaxial growth). The silicon substrate has a first melting temperature, and the silicon carbide has a second melting temperature higher than the first melting temperature. The method further includes heating a reaction chamber to a temperature higher than the first melting temperature and lower than the second melting temperature, causing the silicon substrate to begin melting. The molten silicon substrate is discharged through an opening in the support and into a container. The temperature of the reaction chamber is maintained until the first silicon carbide layer is substantially separated from the silicon substrate. Simultaneously or subsequently, the first silicon carbide layer is exposed to the precursor flow to form a second silicon carbide layer (i.e., homogeneous epitaxy). Once the second silicon carbide layer reaches a desired thickness, any remaining portion of the silicon substrate coupled to the first silicon carbide layer is removed by an etching process. Attached Figure Description

[0007] Figure 1 This is a cross-sectional view of an apparatus according to an embodiment of the present disclosure.

[0008] Figure 2 This is a perspective view of a support member according to an embodiment of the present disclosure.

[0009] Figure 3 yes Figure 2 Plan view of the support components.

[0010] Figure 4 It is along Figure 3 The cross-sectional view of the support member along the axis shown.

[0011] Figure 5 It is along Figure 3 The cross-sectional view of the support member along the axis shown.

[0012] Figure 6 yes Figure 2 An enlarged perspective view of the arm of the support component.

[0013] Figure 7 yes Figure 6 Enlarged plan view of the arm.

[0014] Figure 8 It is the edge of the arm Figure 7 The enlarged cross-sectional view of the shaft shown.

[0015] Figures 9 to 13 This illustrates the use of embodiments disclosed herein. Figure 1 Cross-sectional views of the various stages of the method for manufacturing wafers using the apparatus. Detailed Implementation

[0016] In the following description, certain specific details are set forth in order to provide a thorough understanding of various embodiments of the present disclosure. However, those skilled in the art will understand that the present disclosure may be practiced without these specific details. In some instances, well-known details associated with, for example, reaction chambers, manufacturing processes, and / or semiconductor wafers, have not been described to avoid obscuring the description of embodiments of the present disclosure.

[0017] Throughout this specification, references to "one embodiment" or "a embodiment" mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Therefore, the phrases "one embodiment" or "a embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, in one or more embodiments, particular features, structures, or characteristics may be combined in any suitable manner.

[0018] In the accompanying drawings, the same reference numerals denote similar features or elements. The dimensions and relative positions of features in the drawings need not be drawn to scale.

[0019] U.S. Patent Application No. 15 / 715,940, entitled "Apparatus for Manufacturing Asilicon Carbide Wafer," discloses a solution for manufacturing silicon carbide (SiC) wafers. The manufacturing of the SiC wafer disclosed in U.S. Patent Application No. 15 / 715,940 includes, for example, placing a silicon substrate on a support having multiple strips and openings, growing a 3C-SiC epitaxial layer on the silicon substrate, and then separating the silicon substrate from the 3C-SiC epitaxial layer by melting the silicon substrate. The molten silicon is discharged into a container through multiple openings in the support. Subsequently, the inventors discovered that the support disclosed in U.S. Patent Application No. 15 / 715,940 may not always properly discharge the molten silicon into the container. Instead, the inventors discovered that, due to the surface tension between the molten silicon and the support, the molten silicon sometimes adheres to or sticks to the support itself.

[0020] This document describes an improved apparatus and method for manufacturing wafers such as SiC wafers. As described in U.S. Patent Application No. 15 / 715,940, this apparatus can solve one or more problems associated with manufacturing SiC wafers.

[0021] Figure 1 This is a cross-sectional view of a device 10 according to one embodiment. The device 10 includes a main body 12, a heater 14, an input pipe 16, an output pipe 18, a support member 20, and a container 22.

[0022] The body 12 forms a reaction chamber 24. The reaction chamber 24 provides an enclosed space for various reactions to occur. The support 20 and the container 22 are located within the reaction chamber 24. In one embodiment, the body 12 is made of an insulating material that thermally insulates the reaction chamber 24 from the external environment.

[0023] Heater 14 is coupled to body 12. Heater 14 heats reaction chamber 24 and any contents within reaction chamber 24 (e.g., support 20, container 22, gas, substrate, wafer, or other various objects). Heater 14 can be any type of heating device. For example, heater 14 can be an induction heater including, for example, multiple coils; a resistance heater including, for example, a resistor covered with carbide; etc.

[0024] Inlet conduit 16 provides a fluid path from the external environment of device 10 into reaction chamber 24. In one embodiment, as will be referred to below. Figures 9 to 13As discussed in further detail, the input pipe 16 is used to input the precursor and gas into the reaction chamber 24.

[0025] The output conduit 18 provides a fluid path from the reaction chamber 24 to the environment outside the reaction chamber 24. In one embodiment, as will be referred to below. Figures 9 to 13 In more detail, the output pipe 18 is used to discharge the reaction gas from the reaction chamber 24.

[0026] In one embodiment, device 10 is a horizontal flux reaction chamber. In this embodiment, as... Figure 1 As shown, the input pipe 16 and the output pipe 18 are horizontally aligned with each other, and the gas flows longitudinally along, for example, the upper surface of the support member 20. Other configurations are also possible. For example, in one embodiment, the device 10 is a vertical flow reaction chamber. In this embodiment, the input pipe 16 and the output pipe 18 are vertically aligned with each other, and the gas flows laterally across, for example, the upper surface of the support member 20.

[0027] Support 20 is located on container 22 and within reaction chamber 24. Support 20 provides a platform for receiving and holding various objects, such as substrates or wafers, within reaction chamber 24. See below for reference. Figures 9 to 13 In more detail, during the fabrication of a SiC wafer, a silicon substrate is placed on a support 20. The support 20 is commonly referred to as a base.

[0028] As will be discussed below Figures 2 to 8 In more detail, the support 20 includes a frame 26 positioned on and supported by the container 22; and the frame 26 is disposed on the container 22. An opening 28 provides drainage through which material can flow; multiple arms 30 support, for example, a silicon substrate.

[0029] Container 22 is positioned within reaction chamber 24 and directly beneath support 20. Support 20 rests on container 22. Container 22 collects any material discharged through opening 28 of support 20. Container 22 includes a base. Bottom 32 is directly beneath opening 28 and arm 30 of support 20. Sidewall 34 is directly beneath frame 26 of support 20. In one embodiment, sidewall 34 is in direct physical contact with frame 26 of support 20.

[0030] Figure 2 This is a perspective view of a support member 20 according to an embodiment of the present disclosure. Figure 3 This is a plan view of the support member 20 according to an embodiment of the present disclosure. Figure 4 The support member 20 according to an embodiment of the present disclosure is along Figure 3 The cross-sectional view of the axis shown. Figure 5 The support member 20 according to an embodiment of the present disclosure is along Figure 3The cross-sectional view of the axis shown. Let's review together. Figures 2 to 5 It is beneficial. The support member 20 includes a frame 26, an opening 28, and an arm 30.

[0031] Box 26 physically couples multiple arms 30 together. As previously mentioned... Figure 1 As discussed, frame 26 rests on the side wall 34 of container 22. Frame 26 can have any shape. For example, the shape of frame 26 can be circular or rectangular. In one embodiment, such as Figure 3 As shown in the best embodiment, the support member 20 has a circular shape.

[0032] An opening 28 is formed within a frame 26. In other words, the opening 28 is surrounded and enclosed by the frame 26. The opening 28 provides a drain through which material can flow. For example, as will be shown below relative to... Figures 9 to 13 As discussed in further detail, the silicon substrate is placed on the support 20 and melted and discharged through the opening 28.

[0033] Arms 30 are physically coupled to each other via frame 26 and cantilevered out from frame 26. Specifically, as... Figure 1 and Figure 2 As best shown, each of the plurality of arms has a fixed end attached to frame 26. A free end opposite the fixed end hangs from container 22. In one embodiment, as... Figures 2 to 3 As shown, arm 30 extends from frame 26 toward the center of opening 28. Arm 30 is used to support a substrate or wafer within reaction chamber 24. For example, a silicon substrate is placed on support 20 to fabricate a SiC wafer, as will be discussed in further detail below.

[0034] In one embodiment, all arms 30 may have the same length. In another embodiment, arms 30 may have varying lengths. For example, in one embodiment, arms 30 may comprise multiple sets of arms, each set having a different length. For example, as... Figure 2 and Figure 3 As best shown, arm 30 includes two sets of arms: a first set of arms 36 having a first length L1, and a second set of arms 38 having a second length L2, the second length L2 being less than the first length L1. By having multiple sets of arms with different lengths, support 20 can support wafers of different sizes. For example, see reference... Figure 3 The first set of arms 36 is configured to support a first circular substrate 40 having a profile having a first radius, and the second set of arms 38 is configured to support a second circular substrate having a profile 42 having a second radius greater than the first radius.

[0035] In one embodiment, all arms of arm 30 lie in the same plane. For example, as Figures 3 to 5As shown, the first set of arms 36 and the second set of arms 38 are located in the same plane. In another embodiment, arm 30 may have arms positioned in different parallel planes. For example, in one embodiment, the first set of arms 36 is located in a first plane, while the second set of arms 38 is located in a second plane that is above and parallel to the first plane. In other words, the second set of arms 38 is located above the first set of arms 36. Having arms located in different planes minimizes the number of arms that contact the substrate positioned on the support 20. With contour 42 located on the second set of arms 38, the second circular substrate will not contact the first set of arms 36 because the first set of arms 36 is located below the second set of arms 38.

[0036] In one embodiment, the arms in a plurality of arms are positioned alternately. For example, as Figure 2 and 3 As shown in the best arrangement, the first set of arms 36 and the second set of arms 38 are placed alternately around the frame 26.

[0037] Although both the first group of arms 36 and the second group of arms 38 include four arms, each group of arms in the multiple groups of arms may include any number of arms. For example, the first group of arms 36 may include 3, 5, 6, or 8 arms.

[0038] In one embodiment, the arms 30 are spaced apart from each other. For example, as Figures 2 to 3 As shown, the arms 30 are spaced apart from each other through the opening 28. This spacing ensures that the arms 30 do not block or obstruct material discharge through the opening 28.

[0039] In one embodiment, the arms 30 are spaced substantially equal to each other along the frame 26. For example, see reference... Figure 3 Arms 30 are spaced apart from each other by a distance D1 along frame 26.

[0040] As previously described, in one embodiment, arm 30 comprises multiple sets of arms, each set having a different length. In one embodiment, the arms of each set are spaced substantially equally apart along frame 26. For example, see reference... Figure 3 The first set of arms 36 can be separated from each other by a second distance D2. Similarly, the second set of arms 38 can be separated from each other by a third distance D3. In one embodiment, the second distance D2 and the third distance D3 are substantially equal to each other.

[0041] As previously mentioned, the support disclosed in U.S. Patent Application No. 15 / 715,940 may not always properly discharge molten silicon into the container. Instead, the inventors have found that, due to the surface tension between the molten silicon and the support, the molten silicon sometimes adheres to or sticks to the support itself. To address this issue, in one or more embodiments, arm 30 is configured to minimize physical contact between arm 30 and a substrate (e.g., a silicon substrate) placed on arm 30. By minimizing the physical contact between arm 30 and the substrate placed on arm 30, the surface tension between arm 30 and the molten material (e.g., molten silicon) is reduced when the substrate melts. As a result, the molten material is less likely to adhere to or stick to arm 30, but instead flows out of arm 30 and into container 22.

[0042] Figure 6 This is an enlarged perspective view of the arm 30 of the support member 20 according to an embodiment of the present disclosure. Figure 7 This is an enlarged plan view of arm 30. Figure 8 It is arm 30 along Figure 7 An enlarged sectional view of the axis shown. Figures 6 to 8 It is helpful to review them together. Arm 30 includes a main body portion 44 and a protruding portion 46.

[0043] The main body portion 44 includes a first end physically coupled to the frame 26 and a second end physically coupled to the protrusion portion 46. In one embodiment, as Figures 2 to 3 As shown, arm 30 extends from frame 26 toward arm 26. Body portion 44 is used to position protrusion 46 away from frame 26. This ensures that when a substrate is placed on protrusion 46 and then melted, the molten material does not flow to the center of opening 28, frame 26, and into container 22. Body portion 44 includes upper surface 48 and side surface 50.

[0044] The upper surface 48 of the main body portion 44 is planar. In one embodiment, the upper surface 48 is substantially coplanar with the upper surface 52 of the frame 26.

[0045] The side surface 50 of the main body 44 is slanted or inclined. The side surface 50 is inclined downward or flat, so that molten material can easily slide out of the main body 33 and into the container 22 through the opening 28.

[0046] The protrusion 46 is physically coupled to the main body portion 44. The protrusion 46 is used to support the substrate within the reaction chamber 24. The protrusion 46 includes an upper surface 54 and a side surface 56.

[0047] The upper surface 54 of the protrusion 46 provides a flat surface for the substrate to rest upon. For example, as will be discussed below... Figure 9In more detail, during the fabrication of the SiC wafer, the silicon substrate is positioned on the upper surface 54. In one embodiment, the upper surface 54 of the protrusion 46 and the upper surface 48 of the body portion 44 are substantially parallel to each other.

[0048] The upper surface 54 minimizes physical contact between the support 20 and the substrate (particularly the arm 30) placed on the support 20. That is, when the substrate is placed on the upper surface 54, the substrate will physically contact the upper surface 54, but will not physically contact the rest of the support 20 (e.g., frame 26, the main body portion 44 of the arm 30, and the side surfaces 56 of the protrusion 46, etc.). Therefore, when the substrate melts, the surface tension between the support 20 and the molten material (e.g., molten silicon) is reduced. As a result, the molten material is less likely to adhere to or stick to the arm 30, but will instead flow out of the arm 30 and into the container 22.

[0049] Similar to the side surface 50 of the main body portion 44, the side surface 56 of the protruding portion 46 slopes downward or is inclined, allowing molten material to easily slide out of the protruding portion 46, through the opening 28, and into the container 22. The protruding portion 46 may include any number of side surfaces 56 (e.g., one, three, four, or five side surfaces). For example, in Figures 6 to 8 In the illustrated embodiment, the protrusion 46 is pyramidal, having four side surfaces 56 and a top surface 54 at the apex of the pyramid. As another example, the protrusion 46 may be conical, having a single side surface 56 and a top surface 54 at the apex of the cone.

[0050] The protrusion 46 raises or protrudes the substrate placed on its upper surface 54, positioning it above the main body 44 and / or the frame 26. For example, as Figure 8 As shown, the distance D4 between the upper surface 54 protruding from the upper surface 48 of the main body portion 44 and the upper surface 48 is defined as D4. In one embodiment, the distance D4 is between 0.5 and 3 millimeters. (Refer to...) Figure 13 In more detail, the substrate located on the protrusion 46, particularly the upper surface 54 of the protrusion 46, is raised to allow etching gas to flow and contact the lower surface of the substrate.

[0051] The support member 20 can be made of a variety of materials. For example, the support member 20 can be made of graphite, iron, copper, aluminum, nickel, etc. In one embodiment, the support member 20 is made of a material with a high melting temperature, such that the support member 20 will not melt when the heater 14 is turned on. In one embodiment, the melting temperature of the support member 20 is greater than the melting temperature of the substrate intended to be melted in the reaction chamber 24.

[0052] In one embodiment, the support member 20, which includes the frame 26 and the arm 30, is a single continuous piece. For example, the support member 20 may be formed from a single piece of material.

[0053] Various manufacturing techniques can be used to manufacture the support member 20. For example, the support member 20 can be manufactured by stamping a flat plate of material using a forming press.

[0054] Figures 9 to 13 This illustrates the use of embodiments disclosed herein. Figure 1 Cross-sectional views of various stages in a method for manufacturing wafers using a device. Figures 9 to 13 In the illustrated embodiment, a SiC wafer, such as a 3C SiC wafer, was fabricated. Note that, for simplicity, Figures 9 to 13 The main body 12, heater 14, input pipe 16 and output pipe 18 are not shown.

[0055] like Figure 9 As shown, a substrate of the first material is placed on the support 20 and within the reaction chamber 24. Figure 9 In the illustrated embodiment, a silicon substrate 58 is placed on a support 20 and within a reaction chamber 24. The silicon substrate 58 is located on the upper surface 54 of the protrusion 46 of the arm 30. In one embodiment, the silicon substrate 58 has a crystalline structure. In one embodiment, the reaction chamber 24 is at room temperature when the silicon substrate 58 is placed on the support 20.

[0056] Once the silicon substrate 58 is placed on the support 20, the reaction chamber 24 is sealed and heated to a first temperature by the heater 14. In one embodiment, the first temperature is between 450 and 550 degrees Celsius. The reaction chamber 24 is also configured to have a first pressure level. In one embodiment, the first pressure level is between 8E-5 and 12E-5 bar.

[0057] After the reaction chamber 24 is heated to a first temperature, it is heated to a second temperature greater than the first temperature by heater 14. In one embodiment, the second temperature is between 1050 and 1150 degrees Celsius. The reaction chamber 24 is also configured to have a second pressure level greater than the first pressure level. In one embodiment, the second pressure level is between 75 and 125 mbar.

[0058] During the remainder of the process, reaction chamber 24 is maintained at the second pressure level.

[0059] After heating the reaction chamber 24 to a second temperature, the silicon substrate 58 is immersed in hydrogen (H2). H2 is introduced into the reaction chamber 24 through the inlet pipe 16. Additionally, the silicon substrate 58 undergoes an activation process by introducing hydrogen chloride (HCl) into the reaction chamber 24 through the inlet pipe 16.

[0060] The reaction chamber 24 is then heated to a third temperature, greater than the second temperature, by heater 14. In one embodiment, the third temperature is between 1340 and 1400 degrees Celsius.

[0061] While or after heating reaction chamber 24 to a third temperature, a carbon precursor is introduced into reaction chamber 24 through inlet pipe 16. The carbon precursor carbonizes the surface silicon atoms of silicon substrate 58 to form a thin SiC layer (e.g., on the order of a few nanometers), such as 3C SiC. This is commonly referred to as ramp carbonization. As described below, the SiC thin layer acts as a seed for SiC growth.

[0062] Once reaction chamber 24 reaches the third temperature, a silicon precursor is added to the carbon precursor within reaction chamber 24. By introducing the silicon precursor into reaction chamber 24, the growth of the second material layer begins. Specifically, as... Figure 10 As shown, the first SiC layer 60 begins epitaxial growth from a thin SiC layer. This is commonly referred to as heteroepitaxial growth.

[0063] While H2 continues to flow into the reaction chamber 24 through the inlet pipe 16, a melting process takes place. Specifically, the reaction chamber 24 is heated to a fourth temperature by the heater 14. This fourth temperature is greater than the melting temperature of the silicon substrate 58 and less than the melting temperature of the first SiC layer 60. In one embodiment, the fourth temperature is between 1550 and 1650 degrees Celsius. As a result, as... Figure 11 As shown, the silicon substrate 58 is melted and discharged into the container 22. That is, the molten silicon material 66 of the silicon substrate 58 flows through the opening 28 from the upper side 62 of the support member 20, and the molten silicon material 66 of the silicon substrate 58 is collected in the container 22.

[0064] As previously described, the upper surface 54 minimizes physical contact between the support 20 and the substrate placed on the support 20. In this case, since the silicon substrate 58 is placed on the upper surface 54 of the protrusion 46 of the arm 30, the silicon substrate 58 will have physical contact with the upper surface 54, but not with the rest of the support 20 (e.g., frame 26, the main body portion 44 of the arm 30, and the side surfaces 56 of the protrusion 46, etc.). Therefore, when the silicon substrate 58 melts, the surface tension between the support 20 and the molten silicon material 66 decreases. As a result, the molten silicon material 66 is less likely to adhere to or stick to the arm 30, but will instead flow out of the arm 30 and into the container 22.

[0065] Furthermore, as previously described, the main body portion 44 and the protrusion portion 46 of the arm 30 have side surfaces 50 and 56, respectively, which are downwardly inclined or tilted. As a result, the molten silicon material 66 can easily slide out of the arm 30, through the opening 28, and into the container 22.

[0066] In one embodiment, the reaction chamber 24 is maintained at a fourth temperature until all silicon substrates 58 are removed from the first SiC layer 60.

[0067] In one embodiment, the reaction chamber 24 is maintained at a fourth temperature until the silicon substrate 58 substantially melts and separates from the first SiC layer 60. For example, as... Figure 11 As shown, the fourth temperature of the reaction chamber 24 can be maintained until a small remaining portion 70 of the silicon substrate 58 (e.g., a thin layer of silicon material) remains on the support 20. In this embodiment, as referenced... Figure 13 In more detail, the remaining portion 70 of the silicon substrate 58 is retained. The silicon substrate 58 is removed by a subsequent etching process.

[0068] like Figure 12 As shown, the silicon and carbon precursors are introduced into the reaction chamber 24 through the inlet pipe 16. By introducing the silicon and carbon precursors into the reaction chamber 24, the thickness of the first SiC layer 60 continues to increase. In other words, a second SiC layer 68 begins to grow on the first SiC layer 60. This is commonly referred to as homoepitaxial growth. In one embodiment, the flow of the silicon and carbon precursors occurs simultaneously with the melting of the silicon substrate 58. In another embodiment, the flow of the silicon and carbon precursors is performed after the melting process of the silicon substrate 58 is complete.

[0069] When the second SiC layer 68 reaches the desired thickness, the flow of silicon and carbon precursors ceases. Furthermore, any reactive gases in reaction chamber 24 are removed from reaction chamber 24 via output conduit 18.

[0070] As previously discussed, in one embodiment, the reaction chamber 24 is maintained at a fourth temperature until all silicon substrate 58 is removed from the first SiC layer 60. In this embodiment, after the second SiC layer 68 reaches the desired thickness, the reaction chamber 24 is shut off, vented, and returned to a lower temperature (e.g., room temperature). In one embodiment, the resulting SiC wafer 72 is then immersed in H2 or Ar.

[0071] As previously described, in one embodiment, the reaction chamber 24 is maintained at a fourth temperature until the silicon substrate 58 substantially melts and separates from the first SiC layer 60. In this embodiment, after the second SiC layer 68 reaches the desired thickness, the remaining portion 70 of the silicon substrate 58 is then removed by a subsequent etching process. Figure 13As shown, an etching gas, such as hydrochloric acid (HCl), is introduced into the reaction chamber 24 through inlet pipe 16. The remaining portion 70 of the silicon substrate 58, still coupled to the first SiC layer 60, is then removed by the etching gas. The removed remaining portion 70 of the silicon substrate 58 is collected in container 22. Once the remaining portion 70 of the silicon substrate 58 has been removed, the reaction chamber 24 is shut off, vented, and returned to a lower temperature (e.g., room temperature). In one embodiment, the resulting SiC wafer 72 is subsequently immersed in H2 or Ar.

[0072] Note that because the raised portion 46 of arm 30 raises or protrudes above the first SiC layer 60, the second SiC layer 68, and the remaining portion 70 above the main portion 44 and / or frame 26, the remaining portion 70 of the silicon substrate 58 can be removed by a subsequent etching process. By raising the first SiC layer 60, the second SiC layer 68, and the remaining portion 70, etching gas can flow to contact the remaining portion 70, which is located below the first SiC layer 60.

[0073] Although there has been considerable discussion about the apparatus 10 for manufacturing SiC wafers, the apparatus 10 can be used in any process in which the first material layer is melted and separated from the second material layer.

[0074] Various embodiments provide an apparatus and method for manufacturing a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate, such as a silicon substrate. The arms are configured to minimize physical contact between the support and the substrate. As a result, when the substrate melts, the surface tension between the arms and the molten material is reduced, and the molten material is less likely to adhere to or stick to the support.

[0075] The various embodiments described above can be combined to provide other embodiments. These and other changes can be made to the embodiments based on the detailed description above. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of equivalents defined by the claims. Therefore, the claims are not limited to the disclosure.

Claims

1. An apparatus comprising: Chamber; The container in the chamber; Supports in the chamber and on the container, The support member includes: a frame, an opening in the frame, and multiple arms. Each of the plurality of arms has a fixed end and a free end opposite to the fixed end. The fixed end is attached to the frame. The free end extends into the opening and is suspended from the container. Each of the plurality of arms includes a main body portion and a protruding portion.

2. The apparatus of claim 1, wherein each of the plurality of arms extends from the frame and toward the center of the opening.

3. The device according to claim 1, wherein the main body portion has a first end attached to the frame and a second end attached to the protrusion.

4. The device of claim 3, wherein the protrusion includes an upper surface and a plurality of angled side surfaces.

5. The apparatus of claim 1, wherein the frame and the opening have a circular shape.

6. The apparatus according to claim 1, further comprising: A heater is configured to heat the chamber; An input conduit is configured to introduce gas into the chamber; and An output conduit is configured to remove the gas from the chamber.

7. The apparatus of claim 1, wherein the container includes a sidewall, and the support is positioned on the sidewall.

8. A support member, comprising: box; The opening in the frame; and Multiple arms extending into the opening, Each of the plurality of arms extends cantilevered from the frame. Each of the plurality of arms includes: a main body portion coupled to the frame; And the protruding portion, coupled to the main body portion, The support member is positioned on the container.

9. The support member according to claim 8, wherein the plurality of arms includes a first set of arms having a first length and a second set of arms having a second length, the second length being greater than the first length.

10. The support member according to claim 8, wherein the protruding portion includes an upper surface and a plurality of angled side surfaces.

11. The support member of claim 10, wherein the main body portion includes an upper surface and a plurality of angled side surfaces.

12. The support member of claim 11, wherein the upper surface of the protruding portion is positioned above the upper surface of the main body portion.

13. The support member according to claim 11, wherein the upper surface of the main body portion is coplanar with the surface of the frame.

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