Baking system

By designing a baking system including chamber, gas jet structure, exhaust structure, atmosphere analyzer and gas supply, the negative impact of oxygen, moisture and impurities on the film quality of organic luminescent display devices is solved, and high quality is achieved and long-lived film formation.

CN111180613BActive Publication Date: 2025-02-25SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN201911084849.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-06-04
Filing Date
2019-11-08
Publication Date
2025-02-25
Estimated Expiration
2039-11-08

AI Technical Summary

Technical Problem

During the thin film process of forming an organic light emitting display device, oxygen, moisture and impurities may come into contact with the organic solution of the target substrate, resulting in damage to the film characteristics of the organic layer, which in turn affects the quality and life of the light emitting display device.

Method used

A baking system is designed, which includes a chamber, a table, a gas injection structure, an exhaust structure, an atmosphere analyzer and a gas supply. Through these components, the system can control oxygen, moisture and impurities in the chamber, providing a controlled process environment to ensure high-quality formation of the film.

Benefits of technology

The baking system effectively removes oxygen, moisture and impurities, improves the quality and life of the organic light emitting display device, and ensures high reliability of the film.

✦ Generated by Eureka AI based on patent content.

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Abstract

A baking system is provided, which may include: a chamber having an inner space; a stage disposed in the inner space of the chamber and having a target substrate disposed on the stage; a gas injection structure providing a process gas in the chamber; an exhaust structure; an atmosphere analyzer monitoring moisture and oxygen in the chamber; and a gas supplier controlling a flow rate of the process gas based on information provided from the atmosphere analyzer. The exhaust structure may include an intake portion disposed in the inner space and an exhaust portion connected to the intake portion and disposed outside the chamber.
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Description

[0001] This patent application claims the priority benefit of Korean Patent Application No. 10-2018-0137442 filed on November 9, 2018 and Korean Patent Application No. 10-2019-0065966 filed on June 4, 2019 in the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to a baking system and a method for manufacturing a light-emitting display device using the baking system, and in particular, to a highly reliable baking system and a method for manufacturing a light-emitting display device using the baking system. Background Art

[0003] An organic light emitting display device is one of the self-luminous display devices and is becoming a next-generation display device due to its technical advantages such as wide viewing angle, good contrast, and fast response speed.

[0004] The organic light-emitting display device includes an anode electrode, a cathode electrode, and a light-emitting layer disposed between the anode electrode and the cathode electrode. The light-emitting layer is formed of an organic light-emitting material. When positive and negative voltages are applied to the anode electrode and the cathode electrode, respectively, holes injected from the anode electrode move to the light-emitting layer through the hole injection layer and the hole transport layer, and electrons injected from the cathode electrode move to the light-emitting layer through the electron injection layer and the electron transport layer. In the light-emitting layer, electrons recombine with holes to generate excitons. When the excitons transition from an excited state to a ground state, light is emitted from the light-emitting layer.

[0005] Here, the hole injection layer, the hole transport layer, and the light emitting layer are formed by spraying an organic solution containing an organic material onto a target substrate using a solution coating method such as an inkjet printing method or a nozzle printing method, and then drying the organic solution. Summary of the invention

[0006] Oxygen, moisture, and impurities may exist in the baking system and the target substrate on which the organic solution is sprayed. During the process of forming a thin film of a light-emitting display device, oxygen, moisture, and impurities may come into contact with the organic solution of the target substrate, negatively affecting the film properties of the organic layer. This may lead to degradation of the quality and life of the light-emitting display device.

[0007] Embodiments of the inventive concept provide a baking system configured to control oxygen, moisture, and impurities in a chamber during a process of forming a thin film of a light-emitting display device, thereby providing a controlled process environment suitable for forming the thin film. In addition, embodiments of the inventive concept provide a baking system capable of improving the quality and life of a light-emitting display device and a method of manufacturing a light-emitting display device using the baking system.

[0008] According to an embodiment of the inventive concept, a baking system may include: a chamber having an internal space; a table disposed in the internal space of the chamber and having a target substrate disposed on the table; a gas injection structure providing a process gas in the chamber; an exhaust structure including a suction part disposed in the internal space and an exhaust part connected to the suction part and disposed outside the chamber; an atmosphere analyzer monitoring moisture and oxygen in the chamber; and a gas supplier controlling a flow rate of the process gas based on information provided from the atmosphere analyzer.

[0009] In an embodiment, the baking system may further include a guide portion disposed between the suction portion and the gas injection structure. The guide portion may include one or more openings, and the process gas may be discharged to the exhaust structure through the one or more openings of the guide portion.

[0010] In an embodiment, the baking system may further include a cooling part disposed in the guide part and configured to reduce a temperature of an inner space of the chamber.

[0011] In an embodiment, the gas injection structure may include a first injection structure and a second injection structure spaced apart from the first injection structure and configured to generate a gas flow in a direction different from a direction of the gas flow generated by the first injection structure.

[0012] In an embodiment, the first injection structure may include a first delivery pipe connected to the gas supplier, a first distribution pipe connected to the first delivery pipe, and a first injection pipe connected to the first distribution pipe. The first injection pipe may include a first injection hole configured to inject the process gas.

[0013] In an embodiment, the first injection pipe may further include a second injection hole configured to inject the process gas in a direction different from a direction in which the first injection hole injects the process gas.

[0014] In an embodiment, the second injection structure may include a second delivery pipe connected to the gas supplier, a second distribution pipe connected to the second delivery pipe, and a second injection pipe connected to the second distribution pipe. The second injection pipe may include a third injection hole configured to inject the process gas.

[0015] In an embodiment, the gas injection structure may further include a dummy portion disposed between the first injection structure and the second injection structure and extending along the second injection pipe. The process gas injected through the second injection pipe may be deflected by the dummy portion and may be exhausted to the exhaust structure.

[0016] In an embodiment, the stage may include a heating portion that provides heat to the target substrate.

[0017] In an embodiment, the stage may include a loading part configured to load the target substrate into the chamber and a supporting part connected to the loading part. The height of the loading part may be controlled by the supporting part.

[0018] In an embodiment, the exhaust structure may further include an exhaust control part connected to the exhaust part and configured to control an exhaust amount of the process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Example embodiments of the inventive concepts will be more clearly understood from the following brief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting example embodiments as described herein.

[0020] Figure 1 is a cross-sectional view schematically illustrating a baking system according to an embodiment of the inventive concept.

[0021] Figure 2 is a plan view illustrating a target substrate according to an embodiment of the inventive concept.

[0022] Figure 3 is along Figure 2 A cross-sectional view taken along line II'.

[0023] Figure 4A and Figure 4B is a cross-sectional view illustrating a display device according to an embodiment of the inventive concept.

[0024] Figure 5A is a perspective view illustrating components of a baking system according to an embodiment of the inventive concept.

[0025] Figure 5B is along Figure 5A A cross-sectional view taken along line II-II'.

[0026] Figure 5C is along Figure 5A A cross-sectional view taken along line III-III'.

[0027] Figure 5D is a cross-sectional view illustrating components of a baking system according to an embodiment of the inventive concept.

[0028] Figure 6 is a perspective view illustrating components of a baking system according to an embodiment of the inventive concept.

[0029] Figure 7 is along Figure 6 A cross-sectional view taken along line IV-IV'.

[0030] Figure 8 is a cross-sectional view schematically illustrating a baking system according to an embodiment of the inventive concept.

[0031] Fig. 9 is a block diagram illustrating a method of manufacturing a display device according to an embodiment of the inventive concept.

[0032] FIG. 10A to FIG. 10C is a cross-sectional view of a display device according to an embodiment of the inventive concept.

[0033] Fig.11 is a cross-sectional view schematically illustrating a baking system according to an embodiment of the inventive concept.

[0034] Fig.12 is a block diagram illustrating a method of manufacturing a display device according to an embodiment of the inventive concept.

[0035] It should be noted that these drawings are intended to illustrate the general characteristics of methods, structures and / or materials used in certain example embodiments and are intended to supplement the written description provided below. However, these drawings are not to scale and may not accurately reflect the precise structure or performance characteristics of any given example embodiment and should not be interpreted as defining or limiting the range of values ​​or properties included in the example embodiments. For example, the relative thickness and positioning of molecules, layers, regions and / or structural elements may be reduced or exaggerated for clarity. The use of similar or identical reference numerals in the drawings is intended to indicate the presence of similar or identical elements or features. DETAILED DESCRIPTION

[0036] Example embodiments of the inventive concepts will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown. However, example embodiments of the inventive concepts may be implemented in many different forms and should not be construed as limited to the example embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the inventive concepts of the example embodiments to those of ordinary skill in the art. In the accompanying drawings, the thickness of layers and regions is exaggerated for clarity. Like reference numerals in the drawings represent like elements, and therefore their repeated description will be omitted.

[0037] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, the element may be directly connected or directly coupled to another element, or one or more intermediate elements may be present. On the contrary, when an element is referred to as being "directly connected" or "directly coupled" to another element, there is no intermediate element between them. Throughout this disclosure, the same reference numerals represent the same elements. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. Other words (e.g., "between" and "directly between", "adjacent" and "directly adjacent", "on" and "directly on") used to describe the relationship between an element or layer should be interpreted in the same manner.

[0038] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed herein may be named a second element, component, region, layer or section without departing from the teachings of the example embodiments.

[0039] For ease of description, spatially relative terms such as "under ...", "below ...", "below ...", "above ...", "on ...", etc. may be used herein to describe the relationship of one element or feature to another (additional) element or feature as shown in the figure. It will be understood that spatially relative terms are intended to include different orientations of systems, devices, elements, layers, etc. in use or operation in addition to the orientations depicted in the figure. For example, if the system, device, element, or layer in the figure is flipped, the element described as "below" or "below" other elements or features will subsequently be positioned as "above" other elements or features. Therefore, the exemplary term "below ..." can include both above and below orientations. Systems, devices, elements, or layers may be positioned otherwise (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0040] The terms used herein are for the purpose of describing specific embodiments and are not intended to limit the exemplary embodiments. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "one", and "the" are also intended to include the plural forms. It will also be understood that if the terms "comprise" and its variations and / or "include" and its variations are used herein, the stated features, wholes, steps, operations, elements, and / or components are indicated, but the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groups thereof are not excluded.

[0041] Some example embodiments of the inventive concepts are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures). As such, variations from the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are contemplated. Thus, the example embodiments of the inventive concepts should not be construed as limited to the particular shapes of the regions shown herein, but rather are to include deviations in shape that may result, for example, from manufacturing.

[0042] Unless otherwise defined, the terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments of the inventive concepts belong. It will also be understood that terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless so explicitly defined herein.

[0043] Figure 1 is a cross-sectional view schematically showing a baking system according to an embodiment of the inventive concept. Figure 1 The structure of the baking system is described in more detail.

[0044] Reference Figure 1 , a baking system AP according to an embodiment of the inventive concept may include a chamber CV, a stage ST, a gas supplier GS, a gas injection structure GO, an exhaust structure EH, a guide BF, and an atmosphere analyzer RG.

[0045] The chamber CV may define an internal space. Some elements of the baking system AP are disposed in the internal space of the chamber CV. The internal space of the chamber CV may be an isolated space that can be hermetically sealed from the external atmosphere. The chamber CV may isolate the target substrate DP from the external atmosphere, and a baking process for forming a desired thin film on the target substrate DP may be performed in the internal space. Although not shown, a door may be provided in the side wall of the chamber CV to allow the target substrate DP to enter and leave the internal space of the chamber CV.

[0046] The stage ST may include a loading part BS, a supporting part SH, and a heating part HT. The stage ST may be disposed in an inner space of the chamber CV to support the target substrate DP. The stage ST may be disposed in a lower portion of the chamber CV.

[0047] The target substrate DP may be disposed on the loading part BS. The heating part HT may be disposed between the loading part BS and the target substrate DP and may provide heat to the target substrate DP. However, the inventive concept is not limited to this example, and in an embodiment, the heating part HT may be disposed as an internal element of the loading part BS.

[0048] The support part SH may support the loading part BS. The support part SH may include a lifting device for adjusting the height of the loading part BS in the inner space of the chamber CV. Figure 1 A pair of support parts SH provided to support opposite ends of the loading part BS is shown, but the inventive concept is not limited to this example. For example, the support part SH may include a rotating device provided at the center of the loading part BS to rotate the loading part BS to adjust the height of the loading part BS.

[0049] The baking system AP may include a gas supplier GS, a supply pipe SLC, and a gas valve VG. The gas supplier GS may be disposed outside the chamber CV and may supply a process gas to the chamber CV. The supply pipe SLC may be a pipe for conveying a process gas provided from the gas supplier GS into the chamber CV. The gas valve VG may open / close the supply pipe SLC and may control a flow rate of the process gas provided from the gas supplier GS into the chamber CV.

[0050] The gas injection structure GO may include a first injection structure NI, a dummy portion DB, a second injection structure SN, and a distribution channel NL (eg, Figure 8 ). The gas injection structure GO may be connected to the supply line SLC, and may be used to inject the process gas provided from the gas supplier GS into the chamber CV.

[0051] The first injection structure NI may be disposed in the chamber CV. For example, the first injection structure NI may be disposed on the stage ST. The first injection structure NI may be connected to the supply pipe SLC to inject a process gas provided from the gas supply GS toward the target substrate DP. The process gas injected from the first injection structure NI may react with the organic solution included in the target substrate DP. For example, the process gas may be an inert gas. Nitrogen (N 2 ) gas, argon (Ar) gas, hydrogen (H 2 ) gas, carbon monoxide (CO) gas and any combination thereof as the inert gas.

[0052] The dummy portion DB may be disposed along an edge of the first injection structure NI. The dummy portion DB may be disposed between the first injection structure NI and the second injection structure SN. For example, the dummy portion DB may extend in the first direction D1 and the second direction D2 to surround the first injection structure NI. The dummy portion DB may prevent impurities, moisture, and oxygen that may be generated by the airflow in the chamber CV from entering the target substrate DP.

[0053] The second injection structure SN may be spaced apart from the first injection structure NI, and the dummy portion DB may be disposed between the first injection structure NI and the second injection structure SN. The second injection structure SN may be disposed along an edge of the dummy portion DB. For example, the second injection structure SN may extend in the first direction D1 and the second direction D2 to surround the dummy portion DB. Figure 1 Although not shown, the second spray structure SN may be connected to the supply line SLC and may spray the process gas provided from the gas supplier GS to generate a gas flow in the chamber CV.

[0054] According to an embodiment of the inventive concept, the dummy portion DB and the second spraying structure SN may divide the inner space of the chamber CV into at least two separate areas, one of which is used to perform a baking process on the target substrate DP. For example, the airflow generated by the second spraying structure SN may be blocked by the dummy portion DB, and the airflow generated by the second spraying structure SN may be prevented from being connected to the airflow formed on the target substrate DP.

[0055] The exhaust structure EH may include a suction part HD, an exhaust part HL, and an exhaust control part HC. The exhaust structure EH may be used to exhaust process gas, impurities, moisture, and oxygen from the inside of the chamber CV to the outside.

[0056] The suction part HD may be disposed in the chamber CV. For example, the suction part HD may be disposed adjacent to the upper region of the chamber CV. The suction part HD may be disposed above the gas injection structure GO. The suction part HD may effectively inhale the gas flow flowing from the lower region of the chamber CV toward the upper region. Figure 1 As shown in , the suction portion HD may have an inclined side surface such that the lower portion of the suction portion HD is wider than the upper portion thereof. Therefore, the difference in path length of the airflow sucked at the edge region and the center region of the chamber CV can be reduced.

[0057] The exhaust part HL may be connected to the suction part HD, and may be disposed outside the chamber CV. The exhaust part HL may be a path through which the airflow sucked by the suction part HD is exhausted to the outside.

[0058] The exhaust control unit HC may be disposed outside the chamber CV and may control or maintain the internal pressure of the chamber CV. For example, the exhaust control unit HC may exhaust the internal airflow of the chamber CV to the outside of the chamber CV, thereby controlling the internal pressure of the chamber CV. This may control the environment of the chamber CV to create an environment suitable for the thin film on the target substrate DP. In addition, the exhaust control unit HC may quickly inhale impurities, moisture, and / or oxygen that may be generated during the baking process while maintaining the internal pressure of the chamber CV. The exhaust control unit HC may be or include at least one of a dry pump and a turbo pump.

[0059] The suction valve VL may open or close the exhaust portion HL, and may control the flow rate of the exhaust gas to the outside of the chamber CV.

[0060] The atmosphere analyzer RG can be arranged near the chamber CV. The atmosphere analyzer RG can monitor or measure the internal environmental conditions of the chamber CV. For example, the atmosphere analyzer RG can monitor the amount of impurities, moisture and oxygen in the chamber CV before the baking process of the target substrate DP. The atmosphere analyzer RG can also monitor the amount of impurities, moisture and oxygen generated from the chamber CV and the target substrate DP during the baking process. The atmosphere analyzer RG enables the baking process of the target substrate DP to be performed in a desired environment by monitoring the amount of impurities, moisture and oxygen before and / or during the baking process. In addition, the atmosphere analyzer RG can monitor the amount of impurities, moisture and oxygen that may remain in the chamber CV after the baking process, and this can enable subsequent processes to be performed under the desired internal environmental conditions of the chamber CV.

[0061] The atmosphere analyzer RG may be, for example, a residual atmosphere analyzer (RGA). However, the inventive concept is not limited to this example, and any analyzer that can monitor the amount of moisture and oxygen in the chamber CV may be used as the atmosphere analyzer RG.

[0062] The connection line CL may connect the atmosphere analyzer RG to the gas supplier GS. Information about the amount of impurities, moisture, and oxygen in the chamber CV may be provided from the atmosphere analyzer RG to the gas supplier GS through the connection line CL, and based on the information provided from the atmosphere analyzer RG, the gas supplier GS may supply process gas (also referred to herein as reaction gas) into the chamber CV to control the internal environmental conditions of the chamber CV to be the desired conditions suitable for the baking process.

[0063] According to an embodiment of the inventive concept, since the atmosphere analyzer RG that monitors the internal environmental conditions of the chamber CV is provided in the baking system AP, not only moisture and oxygen generated before and after the baking process but also moisture and oxygen that may be generated from the target substrate DP and from the internal space of the chamber CV during the baking process can be removed. Therefore, the baking system AP can improve the reliability of the target substrate DP obtained by the baking process.

[0064] Figure 2 is a plan view illustrating a target substrate according to an embodiment of the inventive concept. Figure 3 is along Figure 2 A cross-sectional view taken along line II'. Figure 4A and Figure 4B is a cross-sectional view showing a display device according to an embodiment of the inventive concept. Figure 1 The same elements described will be identified by the same or similar reference numerals without repeating their overlapping descriptions.

[0065] Reference Figure 2 and Figure 3The target substrate DP may include a base layer SUB, a plurality of preliminary pixels PX-A, a barrier layer BI, a first insulating layer ILD1, a second insulating layer ILD2, a third insulating layer IH, and a pixel defining layer PLE. The target substrate DP may be divided into a display area DA and a non-display area NDA surrounding the display area DA.

[0066] In the target substrate DP, a plurality of preliminary pixels PX-A may be arranged in a matrix shape. Each of the preliminary pixels PX-A may include a transistor TR, a first electrode E1, and a preliminary organic layer EL-A.

[0067] The base layer SUB may be a bottom layer of other elements on which the target substrate DP is disposed. In one embodiment, the base layer SUB may include a synthetic resin layer. The base layer SUB may be a flexible polyimide-based resin layer, but the inventive concept is not limited to this example. In another embodiment, the base layer SUB may include a rigid glass substrate, a metal substrate, or an organic / inorganic composite substrate.

[0068] The barrier layer BI may be disposed on the base layer SUB. The barrier layer BI may cover the base layer SUB. The barrier layer BI may be an insulating layer including an inorganic material. For example, the barrier layer BI may be made of aluminum oxide (AlO x ), titanium oxide (TiO x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), zirconium oxide (ZrO x ) and hafnium oxide (HfO x ) or includes aluminum oxide (AlO x ), titanium oxide (TiO x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), zirconium oxide (ZrO x ) and hafnium oxide (HfO x ). The barrier layer BI may have a multilayer structure including a plurality of inorganic layers. The barrier layer BI may prevent external contamination materials from passing therethrough.

[0069] The transistor TR may include a semiconductor pattern SL, a control electrode CE, an input electrode IE, and an output electrode OE. The transistor TR may control the flow of charges through the semiconductor pattern SL in response to an electrical signal applied to the control electrode CE. For example, the transistor TR may output an electrical signal from the input electrode IE to the output electrode OE in response to an electrical signal applied to the control electrode CE.

[0070] The semiconductor pattern SL may be disposed on the base layer SUB. The semiconductor pattern SL may include at least one of a crystalline semiconductor material, a metal oxide semiconductor material, polycrystalline silicon, and amorphous silicon. Figure 3 , the control electrode CE of the transistor TR is shown as being disposed on the semiconductor pattern SL, but the inventive concept is not limited to this example. In an embodiment, the control electrode CE may be disposed on the base layer SUB and may be covered by the first insulating layer ILD1, and the semiconductor pattern SL may be disposed on the first insulating layer ILD1. That is, the transistor TR may have a bottom gate structure, but the inventive concept is not limited to this example or a specific embodiment.

[0071] The first insulating layer ILD1 may be disposed between the semiconductor pattern SL and the control electrode CE. The first insulating layer ILD1 may cover the base layer SUB and the semiconductor pattern SL. The first insulating layer ILD1 may include an inorganic material, but the inventive concept is not limited to this example or specific embodiment.

[0072] The control electrode CE may be disposed on the semiconductor pattern SL. The control electrode CE may be spaced apart from the semiconductor pattern SL with the first insulating layer ILD1 interposed therebetween. The control electrode CE may overlap at least a portion of the semiconductor pattern SL.

[0073] The second insulating layer ILD2 may be disposed between the control electrode CE and the input electrode IE and between the control electrode CE and the output electrode OE. The second insulating layer ILD2 may cover the first insulating layer ILD1 and the control electrode CE. The second insulating layer ILD2 may include an inorganic material, but the inventive concept is not limited to this example or specific embodiment.

[0074] The input electrode IE and the output electrode OE may be disposed on the second insulating layer ILD2. The input electrode IE and the output electrode OE may penetrate the first insulating layer ILD1 and the second insulating layer ILD2 and may be respectively coupled to two different portions of the semiconductor pattern SL. However, the inventive concept is not limited to these examples, and in embodiments, the input electrode IE and the output electrode OE may be directly coupled to the semiconductor pattern SL.

[0075] The third insulating layer IH may be disposed on the second insulating layer ILD2. The third insulating layer IH may cover the transistor TR. The third insulating layer IH may be disposed between the transistor TR and the pixel defining layer PLE.

[0076] The pixel defining layer PLE may be disposed on the third insulating layer IH. A plurality of openings may be defined in the pixel defining layer PLE. The pixel defining layer PLE may include an organic material.

[0077] The first electrode E1 may be disposed on the third insulating layer IH. The first electrode E1 may penetrate the third insulating layer IH and may be electrically coupled to the transistor TR. In an embodiment, a plurality of first electrodes E1 may be provided. At least a portion of each first electrode E1 may be exposed through a corresponding opening among the openings defined in the pixel defining layer PLE.

[0078] The preliminary organic layer EL-A may be disposed on the first electrode E1 exposed through the opening of the pixel defining layer PLE. According to an embodiment of the inventive concept, the preliminary organic layer EL-A may be formed by spraying an organic solution into the opening of the pixel defining layer PLE using a solution coating method (e.g., an inkjet printing method or a nozzle printing method); and then removing at least a portion of the organic solvent from the organic solution by drying the organic solution for a specific time.

[0079] The organic solution may be, for example, one of a hole injection solution, a hole transport solution, a light emitting solution, an electron transport solution, and an electron injection solution, but the inventive concept is not limited to this example or specific embodiment.

[0080] The baking process according to an embodiment of the inventive concept may remove the remaining organic solvent of the preliminary organic layer EL-A from the target substrate DP.

[0081] Reference Figure 4A and Figure 4B , a baking process is performed on the preliminary organic layer EL-A to remove the remaining organic solvent from the preliminary organic layer EL-A, and as a result, an organic layer EL having a desired layer thickness can be formed. The organic layer EL formed after the baking process may correspond to an element of the organic light emitting element OD. For example, the organic layer EL may include at least one of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.

[0082] The organic layer EL may be disposed on the first electrode E1. After the baking process, the organic layer EL may be formed on the first electrode E1 to have a desired thickness and provide a flat surface. In an embodiment, the organic layer EL may refer to a plurality of organic layers formed by repeating a printing process, a drying process, and a baking process. For example, the organic layer EL may be a multilayer structure in which a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are stacked.

[0083] The second electrode E2 may be disposed on the organic layer EL and the pixel defining layer PLE. The second electrode E2 may be provided in the form of a single pattern or an overall pattern covering the pixel defining layer PLE and the first electrode E1. Therefore, the organic light emitting element OD included in the pixel PX may include the first electrode E1, the organic layer EL, and the second electrode E2.

[0084] The encapsulation layer TFE may be disposed on the organic light emitting element OD. The encapsulation layer TFE may cover the organic light emitting element OD and may prevent external impurities, moisture, and oxygen from entering the organic light emitting element OD. The encapsulation layer TFE may include an inorganic layer and / or an organic layer. For example, the encapsulation layer TFE may include a first inorganic layer LIL, a first organic layer OEL, and a second inorganic layer UIL. The first inorganic layer LIL may be disposed on the second electrode E2. The second inorganic layer UIL may be spaced apart from the first inorganic layer LIL, and the first organic layer OEL is disposed between the first inorganic layer LIL and the second inorganic layer UIL. The second inorganic layer UIL, together with the first inorganic layer LIL, may seal or encapsulate the first organic layer OEL.

[0085] Each of the first inorganic layer LIL and the second inorganic layer UIL may include an inorganic material. For example, each of the first inorganic layer LIL and the second inorganic layer UIL may be made of aluminum oxide (AlO x ), silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), Silicon Carbide (SiC x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ) and zinc oxide (ZnO x ) or includes aluminum oxide (AlO x ), silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), Silicon Carbide (SiC x ), titanium oxide (TiO x ), zirconium oxide (ZrOx) and zinc oxide (ZnO x ) at least one of.

[0086] The first organic layer OEL may be disposed between the first inorganic layer LIL and the second inorganic layer UIL. The first organic layer OEL may be formed of an organic material, or include an organic material. For example, the first organic layer OEL may be formed of at least one of epoxy resin, polyimide, polyethylene terephthalate, polycarbonate, polyethylene, and polyacrylate, or include at least one of epoxy resin, polyimide, polyethylene terephthalate, polycarbonate, polyethylene, and polyacrylate.

[0087] The baking process performed on the preliminary organic layer EL-A may include spraying an inert gas from the gas supplier GS through the first spray structure NI toward the preliminary organic layer EL-A. The inert gas sprayed from the first spray structure NI may contact the preliminary organic layer EL-A and may generate a gas flow toward the suction part HD.

[0088] If the baking system AP performs an exhaust step to reduce the internal pressure of the chamber CV when the air flow is generated, the remaining organic solvent can be evaporated from the preliminary organic layer EL-A, and thus the organic layer EL having a flat surface can be formed. Here, the inert gas sprayed from the first spraying structure NI can prevent moisture, oxygen, and impurities remaining in the organic solvent during and / or after the drying process from entering the preliminary organic layer EL-A.

[0089] In addition, the process gas injected through the second injection structure SN may generate a gas flow to exhaust impurities, moisture, and oxygen escaping from the inner space of the chamber CV during the baking process to the outside through the exhaust structure EH, and thus the organic layer EL may be manufactured to have improved reliability properties.

[0090] According to an embodiment of the inventive concept, during the baking process, the atmosphere analyzer RG may be used to monitor the amount of impurities, moisture, and oxygen in the chamber CV, and the baking system AP may control the flow rate of the reaction gas provided from the gas supplier GS, thereby manufacturing the organic layer EL having desired characteristics.

[0091] Figure 5A is a perspective view illustrating components of a baking system according to an embodiment of the inventive concept. Figure 5B is along Figure 5A A cross-sectional view taken along line II-II'. Figure 5C is along Figure 5A A cross-sectional view taken along line III-III'. Figure 5D is a cross-sectional view illustrating components of a baking system according to an embodiment of the inventive concept.

[0092] Reference Figure 5A The gas injection structure GO may include a first injection structure NI, a dummy portion DB, and a second injection structure SN. The first injection structure NI may include a first delivery pipe NL-T, a first distribution pipe NL-C, and a first injection pipe NL-R. The second injection structure SN may include a second delivery pipe SN-T, a second distribution pipe SN-C, and a second injection pipe SN-R.

[0093] The first delivery pipe NL-T can be connected to the supply pipe SLC (see, for example, Figure 1). The first delivery pipe NL-T may extend in the third direction D3. The first delivery pipe NL-T may deliver the process gas provided through the supply pipe SLC to the first distribution pipe NL-C. In an embodiment, the first injection structure NI may include a plurality of first delivery pipes NL-T connected to two or more portions of the first distribution pipe NL-C.

[0094] The first distribution pipe NL-C may extend in the first direction D1 and may be connected to the first injection pipe NL-R. The first distribution pipe NL-C may provide the process gas provided from the first delivery pipe NL-T to the first injection pipe NL-R. In an embodiment, the first injection structure NI may include a plurality of first distribution pipes NL-C connected to two opposite ends of the first injection pipe NL-R. Therefore, the first distribution pipe NL-C may support the first injection pipe NL-R.

[0095] The first spray pipe NL-R may extend in the second direction D2 and may be used to spray the process gas provided from the first distribution pipe NL-C onto the target substrate DP. The first spray pipe NL-R may include a plurality of spray holes for spraying the process gas. For example, the first spray pipe NL-R may include a first spray hole H1 and a second spray hole H2 spaced apart from each other. The spray holes H1 and H2 may be defined to penetrate the first spray pipe NL-R.

[0096] The dummy portion DB may be disposed between the first injection structure NI and the second injection structure SN. In an embodiment, the dummy portion DB may extend in the second direction D2. The gas injection structure GO may include a plurality of dummy portions DB disposed at opposite ends of the first distribution pipe NL-C.

[0097] According to an embodiment of the inventive concept, the dummy portion DB and the second spraying structure SN may divide the inner space of the chamber CV into at least two separate areas, one of which is used to perform a baking process on the target substrate DP. For example, the airflow generated by the second spraying structure SN may be blocked by the dummy portion DB, and the airflow generated by the second spraying structure SN may be prevented from connecting to the airflow formed on the target substrate DP.

[0098] The second injection structure SN may be disposed to be spaced apart from the first injection structure NI and the dummy part DB. The second injection structure SN may extend in the first direction D1 and the second direction D2 to surround the first injection structure NI and the dummy part DB.

[0099] The second delivery pipe SN-T can be connected to the supply pipe SLC (see, for example, Figure 1). The second delivery pipe SN-T may extend in the third direction D3. The second delivery pipe SN-T may deliver the process gas provided through the supply pipe SLC to the second distribution pipe SN-C. The second injection structure SN may include a plurality of second delivery pipes SN-T connected to two or more portions of the second distribution pipe SN-C.

[0100] The second distribution pipe SN-C may extend in the first direction D1 and may be connected to the second injection pipe SN-R. The second distribution pipe SN-C may provide the process gas provided from the second delivery pipe SN-T to the second injection pipe SN-R. The second injection structure SN may include a plurality of second distribution pipes SN-C connected to two opposite ends of the second injection pipe SN-R. Therefore, the second distribution pipe SN-C may support the second injection pipe SN-R.

[0101] The second injection pipe SN-R may extend in the second direction D2 and may be used to inject the process gas provided from the second distribution pipe SN-C to the inner space of the chamber CV except for the target substrate DP. The second injection pipe SN-R may include a third injection hole H3 for injecting the process gas. The third injection hole H3 may be defined to penetrate the second injection pipe SN-R.

[0102] Reference FIG. 5B to FIG. 5D , the first injection hole H1 and the second injection hole H2 may be formed to generate airflows in different directions. When viewed in a cross-sectional view, the first injection pipe NL-R may include a plurality of paired injection holes spaced apart from each other in the second direction D2, where each of the paired injection holes includes injection holes H1 and H2 spaced apart from each other in the first direction D1. In an embodiment, a plurality of first injection pipes NL-R may be arranged in the first direction D1. Adjacent first injection pipes NL-R among the first injection pipes NL-R may be arranged such that the first injection hole H1 and the second injection hole H2 of the first injection pipe NL-R face each other.

[0103] According to an embodiment of the inventive concept, since a plurality of paired spray holes are arranged in the second direction D2, the process gas may be uniformly sprayed from the plurality of first spray pipes NL-R toward the target substrate DP.

[0104] Reference Figure 5D , the gas flow generated by the process gas injected from the third injection hole H3 may flow toward the upper portion of the chamber CV and may be blocked by the dummy portion DB, and thus the gas flow generated by the process gas injected from the third injection hole H3 may be separated from the gas flow generated on the target substrate DP. The gas flow generated by the process gas injected from the third injection hole H3 may be prevented from flowing toward the inner sidewall CV-O of the chamber CV, thereby preventing impurities, moisture, and oxygen from entering the target substrate DP.

[0105] Figure 6 is a perspective view illustrating components of a baking system according to an embodiment of the inventive concept. Figure 7 is along Figure 6 In the following description, reference is made to Figure 1 The same elements described will be identified by the same or similar reference numerals without repeating their overlapping descriptions.

[0106] Reference Figure 6 The guide portion BF according to an embodiment of the inventive concept may be provided in the suction portion HD (eg, see Figure 1 ) between the guide portion BF and the gas injection structure GO. The guide portion BF may include a plurality of openings BF-O. The guide portion BF may adjust the flow of the airflow flowing from the target substrate DP toward the suction portion HD to achieve a uniform exhaust airflow. Although not shown, the guide portion BF may also include a sub-opening disposed at an edge region of the guide portion BF and between the openings BF-O, but the inventive concept is not limited to this example or specific embodiment.

[0107] Reference Figure 7 The baking system AP may further include a cooling section CP. The cooling section CP may be disposed in the guide section BF or integrated into the guide section BF. The cooling section CP may cool the water which is heated by heating the heating section HT (see, for example, Figure 1 ) moisture generated by heat supplied to the target substrate DP, and removes the moisture from the chamber CV.

[0108] Figure 8 Schematically shows a cross-sectional view of a baking system according to an embodiment of the inventive concept. Figure 1 The same elements described will be identified by the same or similar reference numerals without repeating their overlapping descriptions.

[0109] The baking system AP-1 according to an embodiment of the inventive concept may include a first device AP1, a second device AP2, and a connection part CH. The second device AP2 may be connected to the reference Figures 1 to 7 The baking system described corresponds to AP.

[0110] The first apparatus AP1 may include a first chamber CV1, a first stage ST1, a cooling part CS, and a pump VC. The first chamber CV1 may define an internal space. Some components or elements of the first apparatus AP1 are disposed in the internal space of the first chamber CV1. The internal space of the first chamber CV1 may be isolated from the external atmosphere. Therefore, the first chamber CV1 may isolate the target substrate DP from the external atmosphere.

[0111] The first stage ST1 may be disposed in the inner space of the first chamber CV1 to support the target substrate DP. The first stage ST1 may be disposed in the lower portion of the first chamber CV1. The first stage ST1 may include a first loading part BS1, a first supporting part SH1, and a first heating part HT1.

[0112] The first loading part BS1, the first supporting part SH1, and the first heating part HT1 of the first stage ST1 may have the same Figure 1 The functions of the loading portion BS, the supporting portion SH, and the heating portion HT of the stage ST are described as being the same as those of the loading portion BS, the supporting portion SH, and the heating portion HT.

[0113] The cooling part CS may be disposed in the inner space of the first chamber CV1. The cooling part CS may be disposed to be spaced apart from the first stage ST1. The cooling part CS may cool moisture generated by heat supplied from the first heating part HT1 to the target substrate DP and remove moisture from the first chamber CV1.

[0114] The pump VC may be disposed outside the first chamber CV1 . The pump VC may discharge impurities, moisture, and oxygen in the first chamber CV1 to the outside through the suction line VCL.

[0115] The connection portion CH may be connected to each of the first device AP1 and the second device AP2, and may be used as a passage between the first device AP1 and the second device AP2. The connection portion CH may be connected to the side wall of each of the first device AP1 and the second device AP2 to load / unload or convey the target substrate DP. The inventive concept is not limited to a specific method of conveying the target substrate DP to the first device AP1 and the second device AP2. That is, various changes may be made to the method of conveying the target substrate DP without departing from the scope of the inventive concept.

[0116] The first apparatus AP1 may first remove the preliminary organic layer EL-A (eg, see FIG. 1 ) which may be supplied into or included on the target substrate DP in a drying process performed on the target substrate DP before the baking process. Figure 3 ). Therefore, the first device AP1 can reduce the amount of moisture and oxygen discharged by the baking process using the second device AP2. This can reduce the processing time and cost required to control the amount of moisture and oxygen in the second device AP2.

[0117] In addition, moisture and oxygen included in the target substrate DP may be removed before the baking process, and then the amount of moisture and oxygen before, during, and after the baking process may be controlled using the atmosphere analyzer RG of the second device AP2. This may improve the organic layer EL (e.g., see FIG. 1 ) formed on the target substrate DP. Figure 4A )’s lifespan.

[0118] Fig. 9 is a block diagram illustrating a method of manufacturing a display device according to an embodiment of the inventive concept. FIG. 10A to FIG. 10C is a cross-sectional view of a display device according to an embodiment of the inventive concept. Figures 1 to 8 The same elements described will be identified by the same or similar reference numerals without repeating their overlapping descriptions.

[0119] Reference Fig. 9 , the method of manufacturing a display device according to an embodiment of the inventive concept may include providing a target substrate (in S100), providing a process gas (in S200), performing a monitoring step (in S300), and forming an organic layer (in S400). Performing the monitoring step (in S300) may include controlling the flow rate of the process gas by monitoring (in S300-1). It controls the flow rate of the process gas based on the monitored internal environmental conditions of the chamber. In the following, reference will be made to Figure 1 A method of manufacturing a display device according to an embodiment of the inventive concept will be described with reference to the baking system AP shown in FIG.

[0120] Reference Fig. 10A According to an embodiment of the inventive concept, a baking process may be performed on a target substrate DP (eg, see Figure 1 ) is a process of printing an organic solution on the substrate. The base substrate BL may include Figure 4A The base layer SUB, the transistor TR and the insulating layers BI, ILD1, ILD2 and IH.

[0121] A pixel defining layer PLE having an opening may be formed on the base substrate BL, and the opening may overlap at least a portion of the first electrode E1. The nozzle NZ may spray an organic solution including an organic solvent into the opening of the pixel defining layer PLE. The sprayed organic solution may form an initial organic layer EL-S, which may have a convex shape in the opening. The organic solution may be, for example, one of a hole injection solution, a hole transport solution, a light emitting solution, an electron transport solution, and an electron injection solution, but the inventive concept is not limited to this example or specific embodiment.

[0122] In an embodiment, a portion of the pixel defining layer PLE exposed through the preliminary organic layer EL-S may have a hydrophobic property. Therefore, the preliminary organic layer EL-S may be locally formed in the opening without spreading onto the upper surface of the pixel defining layer PLE.

[0123] Next, refer to Fig. 10B, a drying process may be performed to remove the organic solvent included in the initial organic layer EL-S. The drying process may partially remove the organic solvent from the initial organic layer EL-S. As a result, a preliminary organic layer EL-A may be formed. For example, the drying process may remove 90% to 95% of the organic solvent in the initial organic layer EL-S.

[0124] The drying process may be performed at room temperature. In this case, impurities, moisture, and oxygen in the atmosphere may enter the target substrate DP, and the organic layer EL of the organic light emitting element OD may suffer from degradation of its life span and reliability. Therefore, the baking process may be performed to remove impurities, moisture, and oxygen that enter the target substrate DP during the drying process.

[0125] Reference Fig. 9 , providing the target substrate (in S100 ) may include loading the target substrate DP, in which the preliminary organic layer EL-A is formed on the base substrate BL, on the stage ST.

[0126] In an embodiment, in order to remove impurities, moisture, and oxygen that may have entered the target substrate DP during the drying process, providing the target substrate (in S100) may further include using Figure 8 The first apparatus AP1 removes moisture and oxygen from the target substrate DP.

[0127] Next, providing the process gas (in S200 ) may include injecting the process gas provided from the gas supplier GS into the chamber CV through the gas injection structure GO.

[0128] Here, the flow rate of the reaction gas supplied from the gas supplier GS may be controlled based on information on the internal environmental condition of the chamber CV provided by the atmosphere analyzer RG.

[0129] Next, performing the monitoring step (in S300) may include monitoring the internal environmental condition of the chamber CV using the atmosphere analyzer RG. Since changes in the environmental condition of the chamber CV may occur during the baking process, moisture and oxygen may be generated from the chamber CV itself, and moisture and oxygen remaining in the target substrate DP may penetrate into the chamber CV.

[0130] According to an embodiment of the inventive concept, even when the baking process is performed, the internal environmental conditions of the chamber CV can be continuously monitored by the atmosphere analyzer RG, and the flow rate of the reaction gas provided from the gas supplier GS can be adjusted based on the monitoring result. Therefore, the baking system AP can effectively remove impurities, moisture, and oxygen that may be generated during the baking process, thereby forming an organic layer EL with improved reliability. In an embodiment, during the baking process, the concentration of moisture in the chamber CV can be maintained at less than or equal to 0.3ppm.

[0131] Next, refer to Fig. 10C The step of forming the organic layer (in S400 ) may include removing the remaining organic solvent in the preliminary organic layer EL-A. By removing the remaining organic solvent, the organic layer EL having a desired thickness and a flat surface may be formed on the first electrode E1 .

[0132] In an embodiment, after forming the organic layer (in S400), an additional step may be performed to remove moisture and oxygen from the internal space of the chamber CV. After forming the organic layer EL, the atmosphere analyzer RG may be used to monitor impurities, moisture, and oxygen remaining in the chamber CV, and the atmosphere analyzer RG may be used to provide internal environmental conditions suitable for subsequent processes.

[0133] Fig.11 is a cross-sectional view schematically illustrating a baking system according to an embodiment of the inventive concept. Fig.12 is a block diagram illustrating a method for manufacturing a display device according to an embodiment of the inventive concept. Figures 1 to 10C The same elements described will be identified by the same or similar reference numerals without repeating their overlapping descriptions.

[0134] Reference Fig.11 , the baking system AP-2 according to the present embodiment may include a chamber CV, a stage ST, a gas supplier GS, a gas injection structure GO, an exhaust structure EH, a guide part BF and an atmosphere analyzer RG, and the chamber CV may include cooling parts CTR1 and CTR2.

[0135] The chamber CV, the stage ST, the gas supplier GS, the gas injection structure GO, the exhaust structure EH, the guide part BF and the atmosphere analyzer RG of the baking system AP-2 may be configured to have the same Figure 1 The features of the chamber CV, stage ST, gas supplier GS, gas injection structure GO, exhaust structure EH, guide part BF and atmosphere analyzer RG of the described baking system AP are substantially the same features. Hereinafter, the cooling parts CTR1 and CTR2 will be described in more detail below.

[0136] The cooling parts CTR1 and CTR2 according to the present embodiment can provide an environment in which the organic solution can be continuously evaporated from the target substrate DP. Due to the heat provided from the heating part HT, the organic solution provided on the target substrate DP may evaporate into the inner space of the chamber CV. If the evaporated organic solution in the inner space of the chamber CV becomes saturated, the organic solution may no longer evaporate from the target substrate DP. This may cause the organic layer EL (e.g., see Figure 4A ) is invalid.

[0137] Since the cooling parts CTR1 and CTR2 provide a temperature lower than the boiling point of the organic solution, the organic solution evaporated into the inner space of the chamber CV may be adsorbed onto the cooling parts CTR1 and CTR2. Therefore, by evaporating the organic solution using the cooling parts CTR1 and CTR2, the baking system AP-2 may provide an environment capable of continuously heating the target substrate DP and form the organic layer EL with improved reliability.

[0138] The cooling parts CTR1 and CTR2 may be disposed in the inner space of the chamber CV. For example, the first cooling part CTR1 may be disposed to surround the inner wall of the chamber CV. In addition, the second cooling part CTR2 may be disposed below the loading part BS. The second cooling part CTR2 may be disposed to be parallel to the loading part BS. Therefore, the evaporated organic solution may be uniformly adsorbed.

[0139] Reference Fig.12 , the method for manufacturing a display device may include providing a target substrate (in S100), providing a process gas (in S200), performing a monitoring step (in S300-1), removing an evaporated organic solution (in S300-2), and forming an organic layer (in S400).

[0140] Can be used with reference Fig. 9 Providing a target substrate (in S100), providing a process gas (in S200), performing a monitoring step (in S300) and forming an organic layer (in S400) are performed in the same or substantially similar manner as described for providing a target substrate (in S100), providing a process gas (in S200), performing a monitoring step (in S300) and forming an organic layer (in S400).

[0141] Removal of the evaporated organic solution according to the present embodiment (in S300-2) may be performed by the cooling parts CTR1 and CTR2. Since the cooling parts CTR1 and CTR2 adsorb the evaporated organic solution onto the inner space of the chamber CV, the baking system AP-2 may provide an inner environmental condition capable of constantly heating the target substrate DP and thereby evaporating the organic solution to form the organic layer EL with improved reliability.

[0142] In addition, although not shown, after the baking process of the target substrate DP is completed, an additional step of heating the cooling parts CTR1 and CTR2 may be further performed after the chamber CV is evacuated.

[0143] When the cooling parts CTR1 and CTR2 are heated, the organic solution adsorbed on the cooling parts CTR1 and CTR2 may evaporate, and the cooling parts CTR1 and CTR2 may return to their original states. The cooling parts CTR1 and CTR2 may be reused or reworked in a subsequent process.

[0144] The baking system according to an embodiment of the inventive concept may include an atmosphere analyzer for monitoring the internal environmental conditions of the chamber. Therefore, the baking system can remove not only moisture and oxygen generated from the target substrate before, after, and during the baking process, but also moisture and oxygen generated from the internal space of the chamber, so that the baking system can perform the baking process in a highly reliable manner.

[0145] While example embodiments of the inventive concepts have been particularly shown and described, it will be understood by those skilled in the art that changes and departures in form and details may be made therein without departing from the spirit and scope of the inventive concepts.

Claims

1. A baking system, comprising a first device, a second device, and a connecting portion connecting the first device and the second device, the connecting portion serving as a passage for a target substrate between the first device and the second device, in, The first apparatus includes: a first chamber having an inner space; a first stage disposed in the inner space of the first chamber to support the target substrate; a cooling portion disposed in the inner space of the first chamber; and a pump disposed outside the first chamber, and Wherein, the second device comprises: a second chamber having an interior space; a second stage disposed in the interior space of the second chamber to support the target substrate; a gas injection structure for providing a process gas in the second chamber; an exhaust structure including a suction portion disposed in the inner space of the second chamber and an exhaust portion connected to the suction portion and disposed outside the second chamber; an atmosphere analyzer to monitor moisture and oxygen in the second chamber; and A gas supplier is connected to the atmosphere analyzer only through a connection line, and controls the flow rate of the process gas based on information provided from the atmosphere analyzer, wherein information about the amount of moisture and oxygen in the second chamber is provided from the atmosphere analyzer to the gas supplier through the connection line.

2. The baking system according to claim 1, further comprising a guide portion disposed between the suction portion and the gas injection structure, in, The guide portion includes one or more openings, and The process gas is discharged to the exhaust structure through the one or more openings of the guide portion.

3. The baking system according to claim 2, wherein: The second apparatus further includes a cooling portion provided in the guide portion and configured to reduce a temperature of the inner space of the second chamber.

4. The baking system according to claim 1, wherein: The gas injection structure includes a first injection structure and a second injection structure that is spaced apart from the first injection structure and configured to generate a gas flow in a direction different from a direction of the gas flow generated by the first injection structure.

5. The baking system according to claim 4, wherein: The first injection structure includes a first delivery pipe connected to the gas supplier, a first distribution pipe connected to the first delivery pipe, and a first injection pipe connected to the first distribution pipe, and The first injection pipe includes a first injection hole configured to inject the process gas.

6. The baking system according to claim 5, wherein: The first injection pipe further includes a second injection hole configured to inject the process gas in a direction different from a direction in which the first injection hole injects the process gas.

7. The baking system according to claim 4, wherein: The second injection structure includes a second delivery pipe connected to the gas supplier, a second distribution pipe connected to the second delivery pipe, and a second injection pipe connected to the second distribution pipe, and The second injection pipe includes a third injection hole configured to inject the process gas.

8. The baking system according to claim 7, wherein: The gas injection structure further includes a dummy portion, which is disposed between the first injection structure and the second injection structure and extends along the second injection pipe, and The process gas injected through the second injection pipe is deflected by the dummy portion and discharged to the exhaust structure.

9. The baking system according to claim 1, wherein: Each of the first stage and the second stage includes a heating portion that provides heat to the target substrate.

10. The baking system according to claim 1, wherein: Each of the first stage and the second stage includes a loading part configured to load the target substrate into a corresponding chamber of the first chamber and the second chamber and a supporting part connected to the loading part, and Wherein, the height of the loading part is controlled by the supporting part.

11. The baking system according to claim 1, wherein: The exhaust structure further includes an exhaust control portion connected to the exhaust portion and configured to control an exhaust amount of the process gas.

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