Heated susceptor design for improved heat transfer and temperature uniformity

Abstract

Embodiments of the present disclosure are generally directed to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal includes a body having a heater embedded therein. The body includes a patterned surface including a first region having a first plurality of posts extending from a base surface of the body at a first height and a second region surrounding the central region, the first region having a second plurality of posts extending from the base surface at a second height greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts is substantially coplanar and defines a substrate receiving surface.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to methods and apparatus for heated susceptors used in semiconductor device manufacturing processes. Background Art

[0002] In the manufacture of electronic devices on substrates, substrates such as semiconductor substrates are subjected to many thermal processes. Thermal processes are usually performed in a processing chamber where materials are deposited or removed, or the substrate is heated in a controlled manner. Such processes include epitaxial deposition, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), etching, annealing, etc.

[0003] The substrate is typically supported in the processing chamber by a heated substrate support or susceptor that transfers heat to the substrate. However, due to the design and layout of the heating mechanism, the susceptor may provide a non-uniform temperature field, which prevents certain portions of the substrate from being heated at the same rate as other portions of the substrate. This results in temperature non-uniformity of the heated substrate.

[0004]

[0006] Therefore, there is a need for an improved susceptor that provides greater temperature uniformity in a substrate heated thereon. Summary of the invention

[0005] Embodiments of the present disclosure are generally directed to an apparatus and method for a pedestal that can be used to increase temperature uniformity in a substrate supported thereon. In one embodiment, a pedestal is disclosed that includes a body having a heater embedded therein. The body includes a patterned surface that includes a first region and a second region surrounding the central region, the first region having a first plurality of posts extending from a base surface of the body at a first height, the second region having a second plurality of posts extending from the base surface at a second height greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts is substantially coplanar and defines a substrate receiving surface.

[0006] In another embodiment, a pedestal is disclosed, the pedestal comprising a body having a heater embedded therein. The body comprising a patterned surface, the patterned surface comprising a central region having a first plurality of posts extending from a base surface of the body at a first height and a peripheral region surrounding the central region, the central region having a first plurality of posts extending from a base surface of the body at a second height greater than the first height, the second region having a second plurality of posts extending from the base surface at a second height greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts is substantially coplanar and defines a substrate receiving surface.

[0007] In another embodiment, a method is disclosed, the method comprising forming a ceramic body having a heater embedded therein; forming a plurality of pillars in an upper surface of the ceramic body such that each pillar extends a first height from the ceramic body; placing a mask on a first portion of the plurality of pillars; and increasing a first depth of a second portion of the plurality of pillars. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to be able to understand the above features of the present disclosure in detail, the disclosure briefly summarized above can be described in more detail with reference to the embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the drawings only show exemplary embodiments and should not be considered as limiting the scope, and other equivalent embodiments may be allowed.

[0009] Figure 1 is a schematic cross-sectional view of a process chamber according to one embodiment described herein.

[0010] Figure 2A An embodiment having a patterned surface Figure 1 A top plan view of the base.

[0011] Figure 2B yes Figure 2A Cross-sectional view of the base.

[0012] FIG. 3A to FIG. 3D It is shown Figure 2A and Figure 2B Various cross-sectional views of one embodiment of a method of manufacturing a susceptor are shown and described in FIG.

[0013] FIG. 4A to FIG. 4D It is shown Figure 2A and Figure 2B Various cross-sectional views of another embodiment of a susceptor manufacturing method are shown and described in FIG.

[0014] Figures 5 to 7 are cross-sectional views of various other embodiments of bases having patterned surfaces with the profiles shown.

[0015] Fig. 8A According to another embodiment, Figure 1 A top plan view of the base used in the chamber.

[0016] Figure 8B yes Fig. 8A An enlarged plan view of a portion of the base.

[0017] Fig. 9 According to another embodiment, Figure 1 A top plan view of the base used in the chamber.

[0018] Fig.10 According to another embodiment, Figure 1 A top plan view of the base used in the chamber.

[0019] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0020] Embodiments of the present disclosure generally relate to a heated pedestal for a process chamber. The heated pedestal includes a patterned surface of grooves surrounding a plurality of protrusions or posts. The posts have different heights on the pedestal. A method for manufacturing the pedestal is also disclosed. The heated pedestal with the patterned surface improves temperature uniformity, which enables more uniform transfer of heat to a substrate, which improves temperature uniformity of a substrate clamped or placed on the heated pedestal. The improved temperature uniformity improves film thickness uniformity of a film processed on the substrate.

[0021] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which film processing is performed in a manufacturing process. For example, depending on the application, the substrate surface on which processing can be performed includes materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys and other conductive materials. Substrates include, but are not limited to, semiconductor substrates. The substrate can be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal and / or bake the substrate surface. As disclosed in more detail below, in addition to performing film processing directly on the surface of the substrate, any of the disclosed film processing steps can also be performed on a bottom layer formed on the substrate, and the term "substrate surface" is intended to include such bottom layers as indicated by the context. Therefore, for example, in the case where a film / layer or a portion of a film / layer has been deposited on the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0022] Figure 1 1 is a schematic cross-sectional view of a processing chamber 100 according to one embodiment described herein. The processing chamber 100 may be a chemical vapor deposition (CVD) chamber, a plasma enhanced chemical vapor deposition (PECVD) chamber, or other thermal process chamber. An exemplary processing chamber that may benefit from the embodiments described herein is available from Applied Materials, Inc., Santa Clara, CA. It is contemplated that other similarly equipped process chambers from other manufacturers may also benefit from the embodiments described herein.

[0023] The processing chamber 100 includes a chamber body 102, a susceptor 104 disposed within the chamber body 102, and a lid assembly 106 coupled to the chamber body 102 and enclosing the susceptor 104 in a processing region 120. The lid assembly 106 includes a gas distributor 112. A substrate 107 is provided to the processing region 120 through an opening 126 formed in the chamber body 102.

[0024] An isolator 110 separates a gas distributor 112, which may be a dielectric material such as a ceramic or a metal oxide, for example, aluminum oxide and / or aluminum nitride, from the chamber body 102. The gas distributor 112 includes an opening 118 for allowing process gas to enter the processing region 120. The process gas may be supplied to the processing chamber 100 via a conduit 114, and the process gas may enter a gas mixing region 116 before flowing through the opening 118. An exhaust port 152 is formed in the chamber body 102 at a location below the susceptor 104. The exhaust port 152 may be connected to a vacuum pump (not shown) to remove unreacted substances and byproducts from the processing chamber 100.

[0025] The gas distributor 112 may be coupled to a power source 141, such as an RF generator or a DC power source. The DC power source may supply continuous and / or pulsed DC power to the gas distributor 112. The RF generator may supply continuous and / or pulsed RF power to the gas distributor 112. During operation, the power source 141 is turned on to supply power to the gas distributor 112 to facilitate formation of a plasma in the processing region 120.

[0026] The susceptor 104 may be formed of a ceramic material, such as a metal oxide or nitride or an oxide / nitride mixture, such as aluminum, aluminum oxide, aluminum nitride, or an aluminum oxide / nitride mixture. The susceptor 104 is supported by an axis 143. The susceptor 104 may be grounded. A heater 128 is embedded in the susceptor 104. The heater 128 may be a plate, a porous plate, a mesh, a wire mesh, or any other distributed arrangement. The heater 128 is coupled to a power source 132 via a connector 130. The power source 132 may be a power source for controlling the heater 128. In some embodiments, the heater 128 may be an electrode so that the susceptor 104 is used as an electrostatic chuck. Thus, the power source may also be an RF generator. When the heater 128 is used as an electrode, the power source 132 may be used to control the properties of the plasma formed in the processing region 120, or to facilitate the generation of plasma within the processing region 120. For example, the power source 141 and the power source 132 may be tuned to two different frequencies to facilitate the ionization of a variety of substances in the processing region 120. In one example, power source 141 and power source 132 may be used to generate a capacitively coupled plasma within processing region 120 .

[0027] The base 104 includes a patterned surface 142 for supporting the substrate 107. The base 104 may also include a cutout 140. The cutout 140 may alternatively be an edge ring. The substrate 107 and the cutout 140 may be concentrically disposed on the surface 142 of the base 104.

[0028] Figure 2A is an embodiment having a patterned surface 142 Figure 1 A top plan view of the base 104 is shown. Figure 2B yes Figure 2A A cross-sectional view of the base 104 is shown.

[0029] Figure 2A The illustrated base 104 includes a peripheral ledge 202 surrounded by a cutout 140. The patterned surface 142 includes two distinct regions, such as a central region 200 surrounded by a peripheral region 205. The patterned surface 142 includes a plurality of posts 210 having an upper surface 215 defining a substrate receiving surface 220. The central region 200 differs from the peripheral region 205 in the height of the posts 210 formed therein. The upper surface 215 of each of the plurality of posts 210 is substantially coplanar.

[0030] Each of the plurality of pillars 210 is shown as a rectangle in plan view, but the pillars 210 may be circular, elliptical, hexagonal, or other shapes in plan view. Fig. 8A and Fig. 9 In the figure, it is shown as a circle. Figure 2A Also shown are a plurality of lift pin holes 212 .

[0031] In some embodiments, the surface area of ​​the central region 200 is less than the surface area of ​​the peripheral region 205. For example, if the diameter of the patterned surface 142 is about 12 inches, the surface area of ​​the peripheral region 205 is about 113 square inches, and the surface area of ​​the central region 200 is about 11 square inches. In some embodiments, the surface area of ​​the peripheral region 205 is about 900% of the surface area of ​​the central region 200. The upper surface 215 of each of the plurality of pillars 210 includes a surface roughness (average surface roughness or Ra) of about 40 micro-inches.

[0032] like Figure 2B As shown, the plurality of pillars 210 include a plurality of first pillars 225A in the peripheral region 205 and a plurality of second pillars 225B in the central region 200. The height 230 of each of the plurality of first pillars 225A is greater than the height 235 of the plurality of second pillars 225B. The height 230 and the height 235 are measured from the upper surface or base surface 232 of the base 104. In some embodiments, the height 230 of each of the plurality of first pillars 225A is about 0.002 inches to about 0.0024 inches, such as about 0.0022 inches. In some embodiments, when compared to the height 230 of the plurality of first pillars 225A, the height 235 of each of the plurality of second pillars 225B is about 0.0005 inches to about 0.0007 inches, such as about 0.0006 inches. Although only two different heights of pillars 210 (ie, height 230 and height 235 ) are shown, patterned surface 142 may include an additional plurality of pillars having heights different from heights 230 and 235 .

[0033] In some embodiments, height 230 is about 1.5 times greater than height 235. In some embodiments, height 230 is about 2 times greater than height 235. In some embodiments, height 230 is about 2.5 times greater than height 235. In some embodiments, height 230 is about 3 times greater than height 235. In some embodiments, height 230 is about 3.5 times greater than height 235. In some embodiments, base surface 232 of pedestal 104 has an Ra greater than the Ra of upper surface 215 of each of plurality of pillars 210. For example, base surface 232 has an Ra of about 63 microinches.

[0034] In other embodiments, the height 235 of each of the plurality of second pillars 225B is about 15 micrometers (μm), and the height 230 of each of the plurality of first pillars 225A is about 30 μm. In other embodiments, the height 235 of each of the plurality of second pillars 225B is about 15 μm, and the height 230 of each of the plurality of first pillars 225A is about 55 μm. In other embodiments, the height 235 of each of the plurality of second pillars 225B is about 30 μm, and the height 230 of each of the plurality of first pillars 225A is about 55 μm.

[0035] The difference in heights 230 and 235, and / or the difference in surface area between the central region 200 and the peripheral region 205, changes the rate of heat transfer between the susceptor 104 and the substrate supported thereon. The changed rate of heat transfer changes the temperature distribution of the substrate. In some embodiments, the difference in heights 230 and 235 and / or the difference in surface area between the central region 200 and the peripheral region 205 improves the temperature uniformity in the substrate, which improves the deposition uniformity on the substrate. In some embodiments, making the height 235 of each of the plurality of second pillars 225B less than the height 230 of each of the plurality of first pillars 225A increases the temperature in the center of the substrate. Increasing the temperature at the center of the substrate can improve the temperature uniformity of the entire substrate, which improves the deposition uniformity on the substrate.

[0036] The heights 230 and 235 of the pillars 210 make the base surface 232 of the base 104 a multi-layer structure. For example, the base surface 232 of the central region 200 defines a raised surface 240 compared to the base surface 232 of the peripheral region 205, which is referred to as a recessed surface 245. Figure 2B The convex surface 240 and the concave surface 245 of the base 104 shown in FIG. 1 define a profile, such as an upside-down or inverted U-shaped profile 250 .

[0037] FIG. 3A to FIG. 3D It is shown Figure 2A and Figure 2B Various cross-sectional views of one embodiment of a method of manufacturing the susceptor 104 are shown and described in FIG.

[0038] Figure 3A A ceramic body 300 is shown with a heater 128 embedded therein. Figure 3B In the embodiment, a plurality of pillars 210 are formed in the ceramic body 300 by removing a portion of a surface 302 of the ceramic body 300. The surface 302 becomes an upper surface 215 of the plurality of pillars 210. In some embodiments, each pillar 210 is formed by a machining process, such as a milling process performed on the ceramic body 300.

[0039] like Figure 3C As shown, after forming a plurality of pillars 210 on the ceramic body, a mask pattern 305 is placed on a portion of the ceramic body 300 and all of the pillars 210. For example, the mask pattern 305 includes a central mask 310 and a peripheral mask 315. The central mask 310 covers the central portion of the ceramic body 300 and the pillars 210 therein, and corresponds to the central region 200 of the base 104 after the pillars are formed. The peripheral mask 315 covers the remaining portion of the pillars 210 and corresponds to the peripheral region 205 of the base 104 after the pillars are formed. With the mask pattern 305 in place, a plurality of first pillars 225A are formed to a height 230 by a shot peening process. The central mask 310 shields the central portion of the ceramic body 300 and the pillars 210, and the peripheral mask 315 shields the upper surfaces 215 of the pillars 210 in the peripheral portion of the ceramic body 300.

[0040] like Figure 3D As shown, the mask pattern 305 is removed, and the base 104 is formed to have a plurality of first pillars 225A and a plurality of second pillars 225B in the peripheral region 205 and the central region 200, respectively.

[0041] FIG. 4A to FIG. 4D It is shown Figure 2A and Figure 2B Various cross-sectional views of another embodiment of a method of manufacturing the base 104 are shown and described in FIG.

[0042] Figure 4A A ceramic body 300 is shown with a heater 128 embedded therein. Figure 4B In the embodiment, the first mask pattern 400 is placed on the ceramic body 300 to form the plurality of pillars 210 to a height 415. The first mask pattern 400 includes a plurality of openings 405 formed therein, and a separate mask 410 to protect the surface 302 of the ceramic body 300.

[0043] exist Figure 4C , a second mask pattern 420 is placed on the ceramic body 300. The second mask pattern 420 is similar to the mask pattern 305. The central mask 310 covers the central portion of the ceramic body 300 and the pillars 210 therein, and corresponds to the central region 200 of the base 104 after the pillars are formed. The peripheral mask 315 covers the remaining portions of the pillars 210, and corresponds to the peripheral region 205 of the base 104 after the pillars are formed. With the mask pattern 305 in place, a plurality of first pillars 225A are formed to a height 230 by a shot peening process. The central mask 310 shields the central portion of the ceramic body 300 and the pillars 210, and the peripheral mask 315 shields the upper surfaces 215 of the pillars 210 in the peripheral portion of the ceramic body 300.

[0044] like Figure 4D As shown, the second mask pattern 420 is removed, and the base 104 is formed to have a plurality of first pillars 225A and a plurality of second pillars 225B in the peripheral region 205 and the central region 200, respectively.

[0045] Figures 5 to 7 1 is a cross-sectional view of various other embodiments of a base 104 having a patterned surface with a profile as shown. Figure 1 Various profiles of the susceptor 104 used in the processing chamber 100.

[0046] Figure 5 The base 104 is shown having a U-shaped profile 500. The U-shaped profile 500 includes a plurality of first posts 225A in the peripheral region 205 and / or on the convex surface 240. A plurality of second posts 225B in the central region 200 and / or on the concave surface 245.

[0047] Figure 6 A base 104 is shown having an M-shaped profile 600. The M-shaped profile includes two sets of second pluralities of posts 225B positioned on a raised surface 240. The raised surface 240 is surrounded by three sets of first pluralities of posts 225A positioned on a recessed surface 245 (in a central region and a peripheral region).

[0048] Figure 7 A base 104 having a W-shaped profile 700 is shown. The W-shaped profile includes three sets of multiple second posts 225B positioned on a raised surface 240 (in a central region and a peripheral region). The raised surface 240 is adjacent to one of two sets of multiple first posts 225A positioned on a recessed surface 245. Figure 6 and Figure 7 1. The first plurality of pillars 225A and the second plurality of pillars 225B are shown at only two different heights, but the patterned surface 142 may include additional plurality of pillars at different heights than shown.

[0049] As the requirements for feature sizes and multi-operation integration processes used in logic and 3D NAND devices continue to increase, it is beneficial to deposit thick films (such as oxide / nitride / carbon based patterned films, etc.) very uniformly on silicon substrates using PECVD processes. Therefore, general specifications and, in the case of patterned films, local deviations from uniformity drive customer specifications. The pedestal 104 as described herein meets or exceeds these specifications.

[0050] In the case of PECVD processing, contact with the substrate must be controlled in order to obtain reliable substrate contact and prevent gross contamination of the back side of the substrate (which typically contains the device layers). This control is achieved by a pattern of pillars on the heater that provides repeatable contact and minimizes problems caused by variable contact, such as defects that create localized barrier layers on a perfectly flat heater. However, as a result of this pattern of pillars, the local temperature of the substrate varies at each contact location. Although temperature variations were acceptable for previous generations, more uniform temperature control is sought for current and future nodes. For example, in conventional hard mask films, this local temperature variation results in a local variation of thickness of about 1%, and a corresponding local variation in the film dielectric constant (k), resulting in problems with integration and yield loss. However, the first section of the present disclosure describes a patterned surface 142 that improves substrate temperature uniformity over conventional methods. The following section describes how substrate processing issues arising from the pattern of pillars 210 can be addressed, which results in better substrate temperature uniformity.

[0051] As described herein, extensive testing and simulations were performed on the pedestal 104. The pedestal 104 as described herein improves temperature uniformity by reducing the temperature difference (Δ) in the substrate by 0.4 degrees Celsius or more.

[0052] Testing also included minimizing local temperature variations within the substrate. To minimize local temperature variations, the magnitude of hot spots originating from contact between the substrate and the posts 210 will be minimized. Based on thermal simulation results, this was achieved by: reducing the diameter of each post 210; reducing the height of the posts 210; and / or increasing the density of posts 210 in the patterned surface 142. However, a negative consequence of reducing the diameter is poor clamping and increased backside damage due to small post size (i.e., less contact area results in high pressure at the contact area).

[0053] Improving the thermal uniformity of a substrate typically involves increasing the column density and / or reducing the column height. However, reducing the column height will constrict the airflow below the substrate. Reducing the column height may also produce different shear forces on the substrate, which can cause the substrate to slide out of position on the base. Increasing the column density also has the same flow contraction effect and sliding problems as reducing the column height. A simple way to solve the flow contraction and / or sliding problems is to make the column diameter smaller. However, this results in a loss of clamping force on the substrate and limits the entry bend of the substrate. Therefore, one solution is to have high conductivity at the center of the base with smaller diameter columns, but as the columns move radially away from the center, the column diameter increases. This approach provides a high column-to-substrate contact area, and therefore provides a high clamping force applied to the substrate.

[0054] An additional competing factor is that increasing the pillar density leads to thermal non-uniformity, making hot / cold spots on the substrate apparent (such as electrode terminal locations in the pedestal 104). This can be addressed by selective post-removal near such hot / cold spots. A possible problem is that if too many pillars are removed, pillar removal may again lead to poor thermal uniformity. For example, pillar removal increases the spacing between the pillars and increases thermal non-uniformity.

[0055] Fig. 8A is a top plan view of a base 104 according to another embodiment. Figure 8B yes Fig. 8A An enlarged plan view of a portion of the base 104. The base 104 described herein can be manufactured according to the above method.

[0056] The base 104 includes a patterned surface 142 having a plurality of posts 210 positioned thereon in a substantially radially oriented pattern. For example, a portion of the plurality of posts 210 are positioned in radially oriented rows 800 that are generally straight in plan view. Another portion of the plurality of posts 210 is arranged in inwardly curved rows 805. Each inwardly curved row 805 has a first portion 810A in the peripheral region 205 and a second portion 810B in the central region 200. The posts 210 in the first portion 810A are generally straight rows or straight lines of posts 210. The posts 210 in the second portion 810B are generally curved toward the center 812 of the base 104. In the illustrated embodiment, three pairs of radially oriented rows 800 are positioned at intervals of approximately 120 degrees. A plurality of inwardly curved rows 805 are positioned between pairs of radially oriented rows 800. The center 812 does not include a post to prevent hot or cold spots on the substrate (ie, "bare locations" described below).

[0057] Figure 8B An edge 815 of the peripheral region 205 of the base 104 is shown where a portion of the plurality of posts 210 form a triangular pattern 820. The orientation of the posts 210 in the triangular pattern 820 is generally linear.

[0058] Fig. 9 1 is a top plan view of a base 104 according to another embodiment. The base 104 includes a patterned surface 142 having a plurality of posts 210 positioned thereon in a spiral pattern 900 (e.g., geometric hypotrochoids and / or epitrochoids). The spiral pattern 900 includes a plurality of spirals 905 formed by the plurality of posts 210. Fig. 9The illustrated pedestal 104 also includes a plurality of bare locations 910 where posts can be positioned. The bare locations 910 correspond to locations where posts will be formed (based on the remaining pattern or spacing of other posts), but one or more posts are not included to prevent hot or cold spots on the substrate. The pedestal 104 described herein can be manufactured according to the above method.

[0059] The plurality of posts 210 are arranged in a spiral pattern 900 to prevent a straight flow path and / or provide a tortuous flow path for the gas applied to the back side of the substrate positioned on the susceptor 104. The tortuous flow path prevents the formation of high velocity flow patterns that would cause the wafer to slip.

[0060] In some embodiments, FIG. 8A to FIG. 9 In the plan view shown in , the plurality of pillars 210 are circular, and each of the plurality of pillars 210 includes a diameter of about 1 millimeter (mm) to about 2 mm. The number of pillars 210 (for a 300 mm substrate) is about 121 pillars to about 2500 pillars on the patterned surface 142. The outermost pillars 210 of the edge 815 (at Figure 8B The distance between the innermost portion of the perimeter ledge 202 (shown in FIG. 1 ) and the perimeter ledge 202 is about 105 mm to about 3 mm. The contact area of ​​the pillars 210 is about 0.14 percent to about 11 percent (the contact area is the total area of ​​the upper surface 215 of each pillar 210 in contact with the substrate).

[0061] Fig.10 1 is a top plan view of a susceptor 104 according to another embodiment. The susceptor 104 includes a patterned surface 142 having a plurality of posts 210 positioned thereon in a pattern that is symmetrical with respect to a radial axis 1000 . Fig.10 The illustrated pedestal 104 also includes a plurality of bare locations 910 where posts can be positioned. The bare locations 910 correspond to locations where posts will be formed (based on the remaining pattern or spacing of other posts), but do not include one or more posts to prevent hot or cold spots on the substrate. The pedestal 104 described herein can be manufactured according to the above method.

[0062] The plurality of columns 210 are Fig.10 The symmetrical pattern shown is arranged to prevent straight flow paths and / or provide a tortuous flow path for the gas applied to the back side of the substrate positioned on the susceptor 104. The tortuous flow path prevents the formation of high-speed flow patterns that would cause the wafer to slip. For example, Fig.10 The base 104 shown in FIG. 1 includes a plurality of serpentine column rows 1005 extending radially from the center of the base 104 .

[0063] In some embodiments, FIG. 8A to FIG. 10In the plan view shown in , the plurality of pillars 210 are circular, and each of the plurality of pillars 210 includes a diameter of about 1 millimeter (mm) to about 2 mm. The number of pillars 210 (for a 300 mm substrate) on the patterned surface 142 is about 121 pillars to about 2500 pillars. The outermost pillars 210 of the edge 815 (at Figure 8B The distance between the innermost portion of the perimeter ledge 202 (shown in FIG. 1 ) and the perimeter ledge 202 is about 105 mm to about 3 mm. The contact area of ​​the pillars 210 is about 0.14 percent to about 11 percent (the contact area is the total area of ​​the upper surface 215 of each pillar 210 in contact with the substrate).

[0064] In some embodiments, the diameter of the column 210 decreases from the edge to the center. For example, the column near the edge 815 can have a diameter of about 2 mm, the column 210 in the central area 200 can have a diameter of about 0.75 mm, and the column 210 between the edge 815 and the central area 200 can have a diameter of about 1 mm. In other embodiments, the diameter of the column 210 increases from the edge to the center. The gradual change in column diameter from the center to the edge maximizes the conductivity, thereby improving substrate processing and increasing thermal uniformity. The increase in column diameter toward the edge also helps to increase the contact area between the column and the substrate, which increases the total clamping force applied to the substrate. This is beneficial for substrates with large curvatures.

[0065] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A base, comprising: A main body having a heater disposed therein, wherein the main body comprises: A patterned surface, the patterned surface comprising: a first region having a first plurality of posts extending from a base surface of the body at a first height; and A second region, the second region surrounding the first region, the second region having a second plurality of posts extending from the substrate surface at a second height greater than the first height, wherein the upper surface of each of the first plurality of posts and the second plurality of posts is arranged in a spiral pattern, is coplanar and defines a substrate receiving surface, when a gas is applied between the substrate surface and a substrate supported on the patterned surface, the spiral pattern prevents a straight flow path, and wherein the patterned surface includes one or more bare locations, the one or more bare locations are disposed between the first plurality of posts and the second plurality of posts. 2 . The susceptor according to claim 1 , wherein the average surface roughness of the base surface is greater than the average surface roughness of the upper surface of each of the pillars. The susceptor of claim 1 , wherein the second height is 1.5 times the first height. The susceptor according to claim 1 , wherein the second height is twice the first height. The susceptor of claim 1 , wherein the second height is 2.5 times the first height. The susceptor of claim 1 , wherein the second height is three times the first height.

7. The susceptor of claim 1, further comprising a third plurality of posts extending from the base surface at a height different from the first height and the second height. The susceptor of claim 1 , wherein a surface area of ​​the first region is smaller than a surface area of ​​the second region.

9. A base, comprising: A main body having a heater embedded in the main body, the main body comprising: A patterned surface, the patterned surface comprising: a central region having a first plurality of posts extending from a base surface of the body at a first height; a peripheral region surrounding the central region, the peripheral region having a second plurality of posts extending from the substrate surface at a second height greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts is arranged in a spiral pattern, is coplanar, and defines a substrate receiving surface, the spiral pattern preventing a straight-line flow path when a gas is applied between the substrate surface and a substrate supported on the patterned surface; and One or more bare locations, the one or more bare locations are disposed between the first plurality of posts and the second plurality of posts.

10. The susceptor of claim 9, wherein the base surface has an average surface roughness greater than an average surface roughness of an upper surface of each of the posts.

11. The susceptor of claim 9, wherein each of the first plurality of posts is positioned on a convex surface and each of the second plurality of posts is positioned on a concave surface.

12. The susceptor of claim 9, wherein the second height is 1.5 times the first height.

13. The susceptor of claim 9, wherein the second height is twice the first height.

14. The susceptor of claim 9, wherein the second height is 2.5 times the first height.

15. The susceptor of claim 9, wherein the second height is three times the first height.

16. The susceptor of claim 9, wherein the second height is 3.5 times the first height.

17. The susceptor of claim 9, wherein the surface area of ​​the central region is smaller than the surface area of ​​the peripheral region.

18. A base, comprising: A body having a heater embedded in the body, wherein the body comprises: A patterned surface, the patterned surface comprising: a first region having a first plurality of posts extending from a base surface of the body at a first height; a second region surrounding the first region, the second region having a second plurality of posts extending from the substrate surface at a second height greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are coplanar, arranged in a spiral pattern and define a substrate receiving surface, the spiral pattern preventing a straight-line flow path when a gas is applied between the substrate surface and a substrate supported on the patterned surface; and One or more bare positions, corresponding to positions where columns among the first plurality of columns and the second plurality of columns will be located in the spiral pattern, wherein the substrate surface, the first plurality of columns, and the second plurality of columns provide a tortuous flow path when gas is applied to the first region and the second region.

19. The susceptor of claim 18, wherein each of the first plurality of posts and the second plurality of posts comprises a diameter, and the diameter increases from a center of the patterned surface to an edge of the patterned surface.

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