Display device and method for manufacturing a display device

Abstract

The present invention relates to a display device and a method for manufacturing the display device. The display device includes: a circuit element layer including a transistor; a display element layer including a first electrode connected to the transistor, a second electrode facing the first electrode, an organic pattern between the first electrode and the second electrode, a pixel defining layer having an opening exposing the first electrode, an auxiliary electrode spaced apart from the opening to cover a portion of the pixel defining layer and connected to the second electrode, a first protective pattern covering the second electrode, and a second protective pattern covering the first protective pattern; and an encapsulation layer covering the display element layer, wherein the first protective pattern and the second protective pattern have stresses in different directions from each other.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0010691, filed on January 28, 2019, which is hereby incorporated by reference herein in its entirety. Technical Field

[0003] Aspects of some example embodiments of the present disclosure herein relate to a display device and a method for manufacturing the display device. Background Art

[0004] With the development of technology, portable thin flat-panel display devices have become a popular type of display device. Among flat-panel display devices, light-emitting display devices, as self-luminous display devices, have a relatively wide viewing angle, relatively good contrast, and relatively fast response speed, and have therefore attracted attention as next-generation display devices. In addition, compared with inorganic light-emitting display devices, organic light-emitting display devices, in which the organic light-emitting layer is made of organic materials, have relatively good brightness, driving voltage, and response speed characteristics, and can also be multi-colored.

[0005] This organic light-emitting display device includes pixels that emit red, green, and blue visible light to achieve a natural color screen. An organic light-emitting layer that emits red visible light is formed in the red pixel, an organic light-emitting layer that emits green visible light is formed in the green pixel, and an organic light-emitting layer that emits blue visible light is provided in the blue pixel.

[0006] Here, if the organic light emitting layer is not formed to correspond only to a desired pixel but also formed in another sub-pixel, organic light emitting layers emitting different colors may be mixed, which may reduce image quality of the organic light emitting display device.

[0007] The above information disclosed in this Background section is only for enhancement of understanding of the background technology and therefore it may contain information that does not constitute prior art. Summary of the Invention

[0008] Aspects of some example embodiments of the present disclosure herein relate to a display device and a method for manufacturing the display device, and, for example, to a display device with improved process reliability and a method for manufacturing the display device.

[0009] Some exemplary embodiments of the present disclosure include a display device including a protective layer on an organic light emitting element to provide the organic light emitting element with relatively improved durability. Therefore, the corresponding display device may also have relatively improved reliability.

[0010] According to some example embodiments conceived in the present invention, a display device includes: a circuit element layer including a transistor; a display element layer including a first electrode connected to the transistor, a second electrode facing the first electrode, an organic pattern between the first electrode and the second electrode, a pixel defining layer in which an opening exposing the first electrode is defined, an auxiliary electrode spaced apart from the opening to cover a portion of the pixel defining layer and connected to the second electrode, a first protective pattern covering the second electrode, and a second protective pattern covering the first protective pattern; and an encapsulation layer covering the display element layer, wherein the first protective pattern and the second protective pattern have stress in directions different from each other.

[0011] According to some example embodiments, the first protection pattern may include a transparent conductive material.

[0012] According to some example embodiments, the second protection pattern may include an inorganic material.

[0013] According to some example embodiments, the first protection pattern may have tensile stress, and the tensile stress of the first protection pattern may range from 0 MPa to 200 MPa.

[0014] According to some example embodiments, the second protection pattern may have compressive stress, and the compressive stress of the second protection pattern may range from -200 MPa to 0 MPa.

[0015] According to some example embodiments, the first protection pattern may have a thickness greater than that of the second electrode and smaller than that of the second protection pattern.

[0016] According to some example embodiments, the first protection pattern may have to The thickness of the second protection pattern may be to thickness.

[0017] According to some example embodiments, the encapsulation layer may include a first encapsulation inorganic layer, a second encapsulation inorganic layer, and an encapsulation organic layer between the first encapsulation inorganic layer and the second encapsulation inorganic layer, each of the first encapsulation inorganic layer and the second encapsulation inorganic layer containing an inorganic material, and the first encapsulation inorganic layer may contact the second protective pattern and a portion of the auxiliary electrode exposed from the second protective pattern.

[0018] According to some example embodiments, the auxiliary electrode may include a lower portion contacting the pixel defining layer and an upper portion facing the lower portion, and a portion of the upper portion may be covered by the encapsulation layer.

[0019] According to some example embodiments, the remaining portion of the upper portion may be covered by a portion of each of the organic pattern, the second electrode, the first protection pattern, and the second protection pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification. The accompanying drawings illustrate aspects of some example embodiments of the inventive concept and, together with the description, serve to explain the principles of the inventive concept. In the drawings:

[0021] Figure 1 is a perspective view of a display device according to some example embodiments of the present inventive concept;

[0022] Figure 2 are cross-sectional views of display devices according to some example embodiments of the present inventive concepts;

[0023] Figure 3A is a block diagram of a display device according to some example embodiments of the present inventive concept;

[0024] Figure 3B yes Figure 3A The equivalent circuit diagram of the pixel;

[0025] Figure 3C is a schematic plan view illustrating a portion of a display panel according to some example embodiments of the inventive concept;

[0026] Figure 4 are cross-sectional views of display devices according to some example embodiments of the present inventive concepts;

[0027] Figure 5 are cross-sectional views of display devices according to some example embodiments of the present inventive concepts;

[0028] Figure 6 are cross-sectional views of display devices according to some example embodiments of the present inventive concepts;

[0029] Figure 7 is a cross-sectional view of a display device according to some example embodiments of the present inventive concept; and

[0030] Figures 8A to 8J are cross-sectional views illustrating a method for manufacturing a display device according to some example embodiments of the inventive concept. DETAILED DESCRIPTION

[0031] In this specification, it will also be understood that when an element (or region, layer, part, etc.) is referred to as being "on," "connected" or "coupled to" another element, it can be directly on, directly connected or directly coupled to the other element, or an intervening third element may also be present.

[0032] The same reference numerals refer to the same elements throughout. In addition, in the drawings, the thicknesses, ratios, and sizes of components are exaggerated for clarity of illustration.

[0033] The term "and / or" includes any and all combinations of one or more of the associated listed items.

[0034] It will be understood that although terms such as "first" and "second" are used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one component from other components. For example, an element referred to as a first element in one embodiment may be referred to as a second element in another embodiment without departing from the scope of the appended claims. Unless otherwise indicated, terms in the singular may include plural forms.

[0035] In addition, “under,” “below,” “above,” and the like are used to explain the relative relationship of components illustrated in the drawings. These terms may be relative concepts and are described based on the directions shown in the drawings.

[0036] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. In addition, terms (such as defined terms in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless so explicitly defined herein.

[0037] The meaning of “include” or “comprising” specifies attributes, fixed numbers, steps, operations, elements, parts or their combinations, but does not exclude other attributes, fixed numbers, steps, operations, elements, parts or their combinations. Hereinafter, aspects of some example embodiments of the present inventive concept will be described with reference to the accompanying drawings.

[0038] Figure 1 are perspective views of display devices according to some example embodiments of the inventive concept. Figure 2 are cross-sectional views of display devices according to some example embodiments of the inventive concept. Figure 3A is a block diagram of a display device according to some example embodiments of the inventive concept. Figure 3B yes Figure 3A Equivalent circuit diagram of a pixel. Figure 3C is a schematic plan view illustrating a portion of a display panel according to some example embodiments of the inventive concept. Figure 4 is a cross-sectional view of a display device according to some exemplary embodiments of the present invention. Figures 1 to 4 Aspects of display devices according to some example embodiments of the inventive concepts are described.

[0039] refer to Figure 1 According to some example embodiments of the present inventive concept, the display device DD may display an image IM through a display surface DD-IS. The display surface DD-IS is parallel to a surface defined by the first direction DR1 and the second direction DR2. A normal direction of the display surface DD-IS (i.e., a thickness direction of the display device DD) is indicated as a third direction DR3.

[0040] According to some example embodiments, a display device DD applicable to a mobile terminal is illustrated as an example. According to some example embodiments, electronic modules, camera modules, power modules, etc. mounted on a mainboard may be located together with the display device DD on a bracket / housing to constitute the mobile terminal. The display device DD according to some example embodiments of the present inventive concept may be applied to large-scale electronic devices such as televisions and monitors, as well as small and medium-sized electronic devices such as tablet PCs, vehicle navigation units, game consoles, and smart watches.

[0041] According to some example embodiments of the present inventive concept, the active area DD-DA may have a rectangular shape. The non-active area DD-NDA is adjacent to the active area DD-DA. The non-active area DD-NDA may surround the active area DD-DA. However, embodiments of the present inventive concept are not limited thereto. For example, the active area DD-DA and the non-active area DD-NDA may be designed to be relatively shaped, or the non-active area DD-NDA may be omitted.

[0042] refer to Figure 2 , the display device DD includes a base layer BL, a circuit element layer CL, a display element layer OL and an encapsulation layer TFE.

[0043] The base layer BL may be a base layer on which other components of the display device DD are located. The base layer BL may include a synthetic resin layer. The synthetic resin layer may be located on a working substrate used to manufacture the display device DD. Thereafter, a conductive layer, an insulating layer, etc. may be located on the synthetic resin layer. When the working substrate is removed, the synthetic resin layer corresponds to the base layer BL. The synthetic resin layer may be a flexible polyimide-based resin layer. Alternatively, the base layer BL may include a rigid glass substrate, a metal substrate, or an organic / inorganic composite substrate, but is not limited to a specific embodiment.

[0044] The circuit element layer CL is located on the base layer BL. The circuit element layer CL includes at least one insulating layer and circuit elements. The insulating layer provided in the circuit element layer CL includes at least one inorganic layer and / or at least one organic layer. The circuit elements include signal lines and pixel driver circuits. The circuit element layer CL can be formed by forming insulating layers, semiconductor layers, and conductive layers by coating or deposition, and patterning the insulating layers, semiconductor layers, and conductive layers by photolithography.

[0045] The display element layer OL is located on the circuit element layer CL and is electrically connected to the circuit element layer CL. The display element layer OL includes an organic light emitting element OD (see, for example, Figure 4 The display element layer OL may include a pixel definition layer PLE (see, for example, Figure 4 ) of the organic layer.

[0046] The encapsulation layer TFE is located on the display element layer OL. The encapsulation layer TFE covers the display element layer OL to block moisture and oxygen introduced from the outside, thereby protecting the display element layer OL. The encapsulation layer TFE may be provided in the form of a thin film including a plurality of inorganic layers and organic layers.

[0047] like Figure 3A As shown in FIG, the display device DD includes a timing controller TC, a gate driver SD, a data driver DG, and a pixel region PXP. However, this is merely an example. According to some example embodiments, at least one of the timing controller TC, the gate driver SD, and the data driver DG may be provided separately for the display device DD. According to some example embodiments, the timing controller TC, the gate driver SD, the data driver DG, and the pixel region PXP may be located on the circuit element layer CL.

[0048] The timing controller TC receives an input image signal to output image data I converted to match the operation mode of the display device DD. DATA And various control signals SCS and DCS.

[0049] The gate driver SD receives a gate drive control signal SCS from the timing controller TC. The gate driver SD receives the gate drive control signal SCS and generates a plurality of gate signals. The gate signals are continuously supplied to the display device DD.

[0050] The data driver DG receives the data driving control signal DCS and the converted image data I from the timing controller TC. DATA The data driver DG drives the image data I based on the data driving control signal DCS and the converted image data I DATA A plurality of data signals are generated and supplied to a display device DD.

[0051] The display device DD receives an electrical signal from the outside to display an image. The display device DD includes a plurality of gate lines SL1 to SLn, a plurality of data lines DL1 to DLm, and a plurality of pixels PX. 11 To PX nm .

[0052] The gate lines SL1 to SLn are arranged in a first direction DR1 to extend in a second direction DR2 crossing the first direction DR1. The gate lines SL1 to SLn sequentially receive gate signals from the gate driver SD.

[0053] The data lines DL1 to DLm cross the gate lines SL1 to SLn so as to be insulated from the gate lines SL1 to SLn. The data lines DL1 to DLm extend in a first direction DR1 and are arranged in a second direction DR2. The data lines DL1 to DLm receive data signals from a data driver DG.

[0054] The display device DD receives a first power voltage ELVDD and a second power voltage ELVSS from the outside. The pixel PX 11 To PX nm Each of the pixels PX is turned on in response to a corresponding gate signal. 11 To PX nm Each of the first power voltage ELVDD and the second power voltage ELVSS receives light in response to a corresponding data signal. The first power voltage ELVDD is a voltage having a level greater than that of the second power voltage ELVSS.

[0055] Pixel PX 11 To PX nm Connected to corresponding gate lines among the gate lines SL1 to SLn, and connected to corresponding data lines among the data lines DL1 to DLm.

[0056] Pixel PX 11 To PX nm Each pixel PX receives a gate signal from a corresponding gate line and a data signal from a corresponding data line. 11 To PX nm Each of the pixels PX is turned on in response to a corresponding gate signal. 11 To PX nm Each of generates light corresponding to a corresponding data signal to display an image.

[0057] Pixel PX 11 To PX nm Each of the CMOS devices includes at least one transistor, at least one capacitor, and an organic light emitting element. Figure 3B An example of an equivalent circuit of one pixel PX connected to one gate line SL among the gate lines SL1 to SLn, one data line DL among the data lines DL1 to DLm, and a power line PL is illustrated.

[0058] The pixel PX includes a first transistor T1, a second transistor T2, a capacitor Cst, and an organic light emitting element OD. The first transistor T1 includes an input electrode and an output electrode. The first transistor T1 outputs a data signal applied to the data line DL, which corresponds to a gate signal applied to the gate line SL.

[0059] The capacitor Cst includes a first capacitor electrode connected to the first transistor T1 and a second capacitor electrode receiving the first power voltage ELVDD. The capacitor Cst is charged with charges corresponding to a difference between a voltage corresponding to a data signal received from the first transistor T1 and the first power voltage ELVDD.

[0060] The second transistor T2 includes a control electrode connected to the output electrode of the first transistor T1 and the first capacitor electrode of the capacitor Cst, an input electrode receiving the first power voltage ELVDD through the power line PL, and an output electrode. The output electrode of the second transistor T2 is connected to the organic light emitting element OD.

[0061] The second transistor T2 controls the driving current flowing through the organic light emitting element OD in response to the charge stored in the capacitor Cst. The on-time of the second transistor T2 is determined by the amount of charge stored in the capacitor Cst. Basically, the output electrode of the second transistor T2 supplies a voltage having a level lower than the level of the first power voltage ELVDD to the organic light emitting element OD.

[0062] The organic light emitting element OD includes a first electrode connected to the second transistor T2 and a second electrode receiving the second power voltage ELVSS. The organic light emitting element OD may include a light emitting pattern between the first electrode and the second electrode.

[0063] The organic light emitting element OD emits light during the on period of the second transistor T2. The light generated in the organic light emitting element OD may have a color determined by the material used to form the light emitting pattern. For example, the light generated in the organic light emitting element OD may have one of red, green, blue, and white.

[0064] refer to Figure 3C , the display device DD may be divided into a plurality of emission regions and non-emission regions adjacent to the emission regions, and light generated from the organic light emitting element OD is emitted through the plurality of emission regions. Figure 3C The figure shows some emission areas PXA including the emission areas 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 area.

[0065] Emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 The emission region PXA is spaced apart from the non-emission region NPXA. 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 It can be arranged in various shapes. For example, the emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 The non-emission regions NPXA may be arranged in a matrix. Therefore, the non-emission regions NPXA may have a lattice shape. However, this is only an example. The emission regions PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 The arrangement is not limited to a particular embodiment.

[0066] Emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 The emission area PXA may correspond to a plurality of openings OP provided in the pixel defining layer PLE. 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 is positioned to be aligned with the organic light emitting element OD (see, for example, Figure 4 ) of the first electrode E1 (see, for example, Figure 4 ) overlap. Figure 3C In the emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 The overlapping first electrodes E1 are illustrated as dashed lines.

[0067] Figure 4 Illustration of the emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 1. A cross-sectional view of some regions in FIG. The circuit element layer CL may include a transistor TR and a plurality of insulating layers BI, IL1, IL2, and IH. The circuit element layer CL is located on the base layer BL.

[0068] The barrier layer BI is located on the base layer BL. The barrier layer BI may cover the base layer BL. The barrier layer BI may be an insulating layer including an inorganic material. For example, the barrier layer BI may include aluminum oxide (AlO x ), titanium oxide (TiO x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), zirconium oxide (ZrO x ) and hafnium oxide (HfO x ) at least one of the following. The barrier layer BI may be provided as a multi-layer inorganic layer. The barrier layer BI may prevent or reduce the situation of foreign matter introduced from the outside.

[0069] According to some example embodiments, the display device DD may further include a buffer layer. The buffer layer may be located on the barrier layer BI. The buffer layer may include an inorganic material or an organic material. The buffer layer may prevent or reduce the infiltration of impurities, moisture, or external air that may degrade the characteristics of the semiconductor pattern SL, which will be described later, and may also flatten the surface. Thus, the circuit element layer CL may be stably formed on the base layer BL.

[0070] The transistor TR includes a semiconductor pattern SL, a control electrode CE, an input electrode IE, and an output electrode OE. The transistor TR controls movement of charges in the semiconductor pattern SL through the control electrode CE to output an electrical signal input from the input electrode IE through the output electrode OE. Figure 4 Pictured Figure 3B The second transistor T2 among the transistors T1 and T2 illustrated in FIG. 1 , ie, one transistor TR corresponding to a driving transistor.

[0071] The semiconductor pattern SL is located on the barrier layer BI. The semiconductor pattern SL may include at least one of a crystalline semiconductor material, a metal oxide semiconductor material, polycrystalline silicon, and amorphous silicon. Although the control electrode CE is located on the semiconductor pattern SL in the transistor TR in some example embodiments of the present inventive concept, embodiments of the present inventive concept are not limited thereto. For example, the transistor TR may have a bottom-gate structure in which the control electrode CE is located on the base layer BL and covered by the first insulating layer IL1, and the semiconductor pattern SL is located on the first insulating layer IL1, but this is not limited to a specific embodiment.

[0072] The first insulating layer IL1 may be located between the semiconductor pattern SL and the control electrode CE. The first insulating layer IL1 covers the base layer BL and the semiconductor pattern SL. The first insulating layer IL1 includes an inorganic material, but is not limited to a specific embodiment.

[0073] The control electrode CE is located on the semiconductor pattern SL. The control electrode CE is spaced apart from the semiconductor pattern SL, with a first insulating layer IL1 between the control electrode CE and the semiconductor pattern SL. The control electrode CE may overlap with the semiconductor pattern SL.

[0074] The second insulating layer IL2 may be located between the control electrode CE and the input electrode IE and between the control electrode CE and the output electrode OE. The second insulating layer IL2 covers the first insulating layer IL1 and the control electrode CE. The second insulating layer IL2 includes an inorganic material, but is not limited to a specific embodiment.

[0075] The input electrode IE and the output electrode OE are located on the second insulating layer IL2. Each of the input electrode IE and the output electrode OE is connected to the semiconductor pattern SL through the first insulating layer IL1 and the second insulating layer IL2. However, this is only an example. For example, the input electrode IE and the output electrode OE may be directly connected to the semiconductor pattern SL.

[0076] The third insulating layer IH is located on the second insulating layer IL2. The third insulating layer IH may cover the transistor TR. The third insulating layer IH may be located between the transistor TR and the display element layer OL to electrically insulate the transistor TR from the display element layer OL.

[0077] The display element layer OL includes a pixel defining layer PLE, an organic light emitting element OD, an auxiliary electrode ES, a first protection pattern FL, and a second protection pattern SIL.

[0078] The pixel defining layer (PLE) is located on the third insulating layer (IH). An opening (OP) may be defined in the pixel defining layer (PLE). The pixel defining layer (PLE) includes an upper portion (PLE-U), a lower portion (PLE-B) facing the upper portion (PLE-U), and a side portion (PLE-S) connecting the upper portion (PLE-U) to the lower portion (PLE-B). The opening (OP) may be defined by the side portion (PLE-S) that passes through the pixel defining layer (PLE) to be exposed.

[0079] According to some example embodiments, the side portion PLE-S may be inclined toward the upper portion PLE-U of the pixel defining layer PLE on the first electrode E1. Thus, the cross-section of the opening OP may have a trapezoidal shape. However, this is merely an example. For example, the side portion PLE-S may be perpendicular to the first electrode E1 and the upper portion PLE-U, but this is not limited to a specific embodiment.

[0080] The opening OP may expose a portion of the first electrode E1. According to some example embodiments, the opening OP may be provided in plural to overlap with the corresponding first electrode. Figure 3C Description of the emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 correspond.

[0081] The organic light emitting element OD may include a first electrode E1, a second electrode E2, and an organic pattern EL. The organic light emitting element OD overlaps the active area DD-DA. According to some example embodiments, the organic light emitting element OD may further include a hole control layer.

[0082] The first electrode E1 is located on the third insulating layer IH. The first electrode E1 may pass through the third insulating layer IH and then be electrically connected to the transistor TR. The first electrode E1 may be provided in plurality. The plurality of first electrodes may be arranged with respect to the reference Figure 3C Description of the emission area PXA 22 、PXA 23 、PXA 24 、PXA 32 、PXA 33 and PXA 34 The corresponding emission areas in overlap.

[0083] The second electrode E2 is located on the first electrode E1. The second electrode E2 is positioned facing the first electrode E1. According to some example embodiments, the second electrode E2 may be arranged to overlap with the corresponding first electrode E1. A plurality of second electrodes E2 may be provided. The plurality of second electrodes may have an island pattern. Thus, each second electrode may be arranged to overlap with the corresponding first electrode.

[0084] Each of the second electrodes E2 may comprise an optically transparent transmissive electrode. For example, the second electrode E2 may comprise at least one of indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium oxide (IGO), indium zinc gallium oxide (IGZO), and mixtures / compounds thereof. Thus, the display device DD displays an image on its front surface. However, this is merely an example. For example, depending on the direction in which the image is displayed, the second electrode E2 may be a reflective electrode or a transflective electrode.

[0085] The organic pattern EL is located between the first electrode E1 and the second electrode E2. The organic light emitting element OD can activate the organic pattern EL according to the potential difference between the first electrode E1 and the second electrode E2 to generate light. The organic pattern EL can be provided in plurality to overlap with the corresponding first and second electrodes.

[0086] According to some example embodiments, the organic pattern EL may include a low-molecular organic material or a high-molecular organic material. For example, when red visible light is emitted from the organic pattern EL, the organic pattern EL may include tetraphenylnaphthacene (rubrene), tris(1-phenylisoquinoline)iridium(III) (Ir(piq)3), bis(2-benzo)[b]thiophen-2-yl-pyridine)(acetylacetonate)iridium(III) (Ir(btp)2(acac)), tris(dibenzoylmethane)(phenanthroline)europium(III) (Eu(dbm)3(phen)), tris[4,4'-di-tert-butyl-(2,2')- ...[4,4'-di-tert-butyl-(2,2')-bis(2-benzo)[b]thiophen-2-yl-pyridine)(acetylacetonate)iridium(III) (Ir( Pyridine] ruthenium (III) complex (Ru(dtb-bpy)3*2(PF6)), DCM1, DCM2, tris(thiophenoyltrifluoroacetone) europium (Eu(TTA)3), butyl-6-(1,1,7,7-tetramethylgulonidin-9-enyl)-4H-pyran (butyl-6-(1,1,7,7-tetramethylgulonidin-9-enyl)-4H-pyran: DCJTB), etc., and further include polymer light-emitting materials such as polyfluorene polymers, polyethylene polymers, etc.

[0087] In addition, in the case where the organic pattern EL emits green visible light, the organic pattern EL may include 3-(2-benzothiazolyl)-7-(diethylamino)coumarin 6, 2,3,6,7-tetrahydro-1,1,7,7,-tetramethyl-1H,5H,11H-10-(2-benzothiazolyl)quinolinone-[9,9a,1gh]coumarin (C545T), N,N'-dimethyl-quinacridone (DMQA), tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), etc. as green emission materials, and further include polymer light-emitting materials such as polyfluorene polymers, polyethylene polymers, etc.

[0088] In addition, in the case where the organic pattern EL emits blue visible light, the organic pattern EL may include oxadiazole dimer dye (Bis-DAPOXP), spiro compounds (Spiro-DPVBi, Spiro-6P), triarylamine compounds, bis(styryl)amine (DPVBi, DSA), 4,4'-bis(9-ethyl-3-carbazolylene)-1,1'-biphenyl (BCzVBi), perylene, 5,8,11-tetra-tert-butylperylene (TPBe), carbazole-3,3'-(1,4-phenylene-2,1 -ethylenediyl)bis[9-ethyl-(9C)](BCzVB), 4,4-bis[4-(di-p-tolylamino)phenylvinyl]biphenyl (DPAVBi), 4-[(di-p-tolylamino)phenylvinyl]stilbene (DPAVB), 4,4'-bis[4-(diphenylamino)phenylvinyl]biphenyl (BDAVBi), bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III (FIrPic), etc., and further include polymer light-emitting materials such as polyfluorene polymers, polyethylene polymers, etc.

[0089] The organic pattern EL according to some example embodiments may further include an electron control layer including a low molecular material. The electron control layer may include an electron transport layer and an electron injection layer.

[0090] According to some example embodiments, the organic light emitting element OD may further include a hole control layer. The hole control layer is located between the first electrode E1 and the organic pattern EL. The hole control layer may include a hole injection layer and a hole transport layer.

[0091] The hole control layer may have a single-layer structure of a hole injection layer or a hole transport layer, and may also have a single-layer structure made of a hole injection material or a hole transport material. In addition, the hole control layer may have a single-layer structure formed of a plurality of different materials, or have a structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / hole buffer layer, a hole injection layer / hole buffer layer, a hole transport layer / hole buffer layer, or a hole injection layer / hole transport layer / electron blocking layer laminated continuously from the first electrode E1, but is not limited thereto.

[0092] The auxiliary electrode ES may be located on the pixel defining layer PLE. For example, the auxiliary electrode ES may cover at least a portion of the side portion PLE-S and the upper portion PLE-U of the pixel defining layer PLE. The auxiliary electrode ES may include a lower portion ES-B contacting the pixel defining layer PLE and an upper portion ES-U facing the lower portion ES-B. The upper portion ES-U may contact the encapsulation layer TFE.

[0093] The auxiliary electrode ES may be provided in plurality. Since the auxiliary electrode ES is located on the upper portion PLE-U of the corresponding pixel defining layer PLE, the plurality of auxiliary electrodes ES may be arranged in a matrix form.

[0094] The auxiliary electrode ES may be electrically connected to the second electrode E2 of the organic light-emitting element OD. The auxiliary electrode ES may be located between adjacent organic light-emitting elements to electrically connect the second electrodes provided in different organic light-emitting elements. According to some exemplary embodiments, the plurality of second electrodes may have an island pattern. Thus, the second electrodes may be electrically connected to each other via the plurality of auxiliary electrodes. Thus, the second electrodes may function as a common electrode.

[0095] The first protective pattern FL is located on the second electrode E2. The first protective pattern FL may cover the second electrode E2. One end and a distal end of the first protective pattern FL may each be connected to upper portions of different auxiliary electrodes.

[0096] The first protection pattern FL may be located on the second electrode E2 to improve light efficiency of the organic light emitting element OD. In addition, the first protection pattern FL may be used to protect the organic light emitting element OD while the organic light emitting element OD is patterned.

[0097] According to some example embodiments, the first protective pattern FL may include a transparent conductive material. For example, the first protective pattern FL may include at least one of zinc oxide (ZnO), tin oxide (SnO2), indium zinc oxide (IZO), indium tin oxide (ITO), and indium gallium oxide (IGO). Therefore, when the organic light emitting element OD is provided as a front emission type, light generated in the organic pattern EL may pass through the first protective pattern FL and then be transmitted to the outside.

[0098] The first protective pattern FL may include a transparent conductive material to provide electrical connection between the second electrode E2 and the auxiliary electrode ES. For example, when forming the second electrode E2, the second electrode E2 may not function as a common electrode due to poor contact between the second electrode E2 and the auxiliary electrode ES. According to the present invention, the first protective pattern FL may contact the second electrode E2 and the adjacent auxiliary electrode to provide electrical connection between the second electrode E2 and the auxiliary electrode ES, thereby providing an organic light-emitting element OD with improved reliability.

[0099] The first protection pattern FL according to some example embodiments may have an approximate to approximately When the first protection pattern FL has a thickness less than about When the thickness of the first protection pattern FL is greater than about 100, the first protection pattern FL cannot be used to supplement the electrical connection between the second electrode E2 and the auxiliary electrode ES. When the thickness of the first protective pattern FL is greater than that of the organic pattern EL, the thickness of the first protective pattern FL located on the organic pattern EL may increase, so that light efficiency may be deteriorated. The first protective pattern FL may have a thickness greater than that of the organic pattern EL.

[0100] The second protection pattern SIL is positioned on the first protection pattern FL. The second protection pattern SIL may cover the first protection pattern FL. One end and a distal end of the second protection pattern SIL may each be connected to the upper portion of a different auxiliary electrode. The second protection pattern SIL may cover the first protection pattern FL to seal the organic light-emitting element OD together with the auxiliary electrode ES. Therefore, when forming the organic light-emitting element OD, the second protection pattern SIL can protect components provided in the organic light-emitting element OD from external impact, etching materials, or external air.

[0101] According to some example embodiments, the second protection pattern SIL may include an inorganic material. For example, the second protection pattern SIL may include silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon oxide (SiO x ), silicon carbide (SiC x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ) and zinc oxide (ZnO x ) at least one of.

[0102] The second protection pattern SIL according to some example embodiments may have an approximate to approximately When the second protection pattern SIL has a thickness less than about When the second protective pattern SIL has a thickness of more than about 100 nm, the second protective pattern SIL may not be used to protect the components provided in the organic light emitting element OD from external impact, etching materials or external air when forming the organic light emitting element OD. When the thickness of the first protection pattern FL is less than that of the second protection pattern SIL, the thickness of the second protection pattern SIL located on the organic pattern EL may increase to deteriorate light efficiency. According to some example embodiments of the inventive concept, the first protection pattern FL may have a thickness less than that of the second protection pattern SIL.

[0103] The first protection pattern FL and the second protection pattern SIL according to the inventive concept may respectively have stresses in directions different from each other.

[0104] When the organic light emitting element OD is patterned to be formed, the photoresist process may be performed multiple times on the area overlapping the opening OP of the pixel defining layer PLE. Here, the lift-off layer LOL (see FIG. 1 ) located on the circuit element layer CL Figure 8C ) and the photoresist layer PR (see Figure 8C ) can be etched into an undercut shape to deposit an organic material, thereby forming an organic light emitting element OD.

[0105] Since the previously formed organic pattern EL is exposed to the atmosphere while patterning adjacent organic light emitting elements, the organic pattern EL may be sealed by using the second protection pattern SIL to protect the organic pattern EL from etching materials or external air.

[0106] The first protection pattern FL according to the present inventive concept may have stress in a direction opposite to that of the second protection pattern SIL. For example, when the second protection pattern SIL has compressive stress under the same conditions, the first protection pattern FL may have tensile stress opposite to the compressive stress.

[0107] refer to Figure 8F and Figure 8G The process of forming the organic light-emitting element OD may include forming a third deposition layer FL-P on the lift-off layer LOL and the photoresist layer PR, and forming a fourth deposition layer SIL-P on the third deposition layer FL-P. According to some example embodiments, the first protection pattern FL may be a layer deposited simultaneously with the formation of the third deposition layer FL-P, and the second protection pattern SIL may be a layer deposited simultaneously with the formation of the fourth deposition layer SIL-P. Here, for ease of description, the first protection pattern FL and the second protection pattern SIL are represented as separate components. Therefore, the third deposition layer FL-P may have the same tensile stress as the first protection pattern FL, and the fourth deposition layer SIL-P may have the same compressive stress as the second protection pattern SIL.

[0108] According to some example embodiments of the present inventive concept, the undercut UC (referring to Figure 8C ) can have compressive stress under constant process conditions. The third deposition layer FL-P having a tensile stress opposite to that of the fourth deposition layer SIL-P can be located on the second deposition layer E2-P (see FIG. Figure 8F ) and the fourth deposition layer SIL-P to prevent or reduce the situation where the lift-off layer LOL and the photoresist layer PR are recessed.

[0109] Each of the third deposition layer FL-P and the first protection pattern FL according to some example embodiments may have a tensile stress of about 0 MPa to about 200 MPa.

[0110] When each of the third deposition layer FL-P and the first protection pattern FL has a tensile stress less than about 0 MPa, compressive stress may be applied in the same direction as that of the fourth deposition layer SIL-P to cause a phenomenon in which the lift-off layer LOL and the photoresist layer PR are recessed.

[0111] When each of the third deposition layer FL-P and the first protection pattern FL has a tensile stress less than about 200 MPa, a large stress may act in a direction opposite to the direction in which the lift-off layer LOL and the photoresist layer PR are recessed. As a result, the lift-off layer LOL may be peeled off from a component (such as the auxiliary electrode ES) located on the circuit element layer CL.

[0112] Each of the fourth deposition layer SIL-P and the second protection pattern SIL according to some example embodiments may have a compressive stress of about −200 MPa to about 0 MPa.

[0113] When each of the fourth deposition layer SIL-P and the second protection pattern SIL has a compressive stress less than about -200 MPa, a compressive stress greater than the tensile stress of the third deposition layer FL-P may act to cause a phenomenon in which the lift-off layer LOL and the photoresist layer PR are recessed.

[0114] When each of the fourth deposition layer SIL-P and the second protection pattern SIL has a tensile stress exceeding approximately 0 MPa, the stress of each of the fourth deposition layer SIL-P and the second protection pattern SIL may act in the same direction as the direction of the tensile stress of the third deposition layer FL-P to cause a phenomenon in which the peeling layer LOL is peeled off from a component (such as an auxiliary electrode ES) located on the circuit element layer CL.

[0115] The encapsulation layer TFE is located on the organic light emitting element OD. In this embodiment, the encapsulation layer TFE may include a first encapsulation inorganic layer LIL, an encapsulation organic layer OEL, and a second encapsulation inorganic layer UIL.

[0116] The first encapsulation inorganic layer LIL is located on the display element layer OL. The first encapsulation inorganic layer LIL may contact the second protection pattern SIL and a portion of the auxiliary electrode ES exposed from the second protection pattern SIL. The second encapsulation inorganic layer UIL is located on the first encapsulation inorganic layer LIL. The first and second encapsulation inorganic layers UIL may seal the encapsulation organic layer OEL.

[0117] Each of the first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL may include an inorganic material. For example, each of the first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL may include aluminum oxide (AlO x ), silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon carbide (SiC x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ) and zinc oxide (ZnO x ) at least one of.

[0118] The encapsulation organic layer OEL may be located between the first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL. The encapsulation organic layer OEL may include an organic material. For example, the encapsulation organic layer OEL may include at least one of epoxy, polyimide, polyethylene terephthalate, polycarbonate, polyethylene, and polyacrylate.

[0119] The first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL may be integrated to be located on the front surface of the display device DD in a plane. According to some example embodiments, each of the first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL may partially overlap with the encapsulation organic layer OEL. Therefore, the first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL may be spaced apart from each other in the third direction DR3 over a portion of the region (the encapsulation organic layer OEL is between the first encapsulation inorganic layer LIL and the second encapsulation inorganic layer UIL), and may be in direct contact with each other in the third direction DR3 over another portion of the region. The encapsulation layer TFE may seal the organic light emitting element OD to protect the organic light emitting element OD from foreign matter introduced from the outside.

[0120] Figure 5 is a cross-sectional view of a display device according to some example embodiments of the present invention. Figures 1 to 4 The components are the same as those of FIG. 1 , and therefore repeated descriptions will be omitted.

[0121] In the display device DD-1 according to some example embodiments, the second electrode E2-1 and the second protection pattern SIL-1 may be formed in the emission area PXA where light having colors different from each other is emitted. 22 、PXA 23 and PXA 24 contact with each other in one of the emission regions.

[0122] For example, the emission area PXA 22 、PXA 23 and PXA 24 One of the emission regions PXA 24 It is defined as an emission region to be formed later in the formation process. Since a single photolithography process is performed only on the emission region to be formed later, it is possible to 24 Omit overlapping areas Figure 4 The first protection pattern FL is formed.

[0123] Since the first protection pattern FL has an island pattern shape, the emission area PXA may be omitted. 22 、PXA 23 and PXA 24 One of the emission regions PXA 24 Therefore, the second electrode E2-1 and the second protection pattern SIL-1 may be formed in the emission region PXA. 24 in contact with each other.

[0124] According to some example embodiments, since there is no emission region PXA remaining in the subsequent process 24 The first protection pattern FL is omitted, so the manufacturing cost and process time for the display device DD-1 can be reduced.

[0125] Figure 6 is a cross-sectional view of a display device according to some example embodiments of the present invention. Figures 1 to 4 The components are the same as those of FIG. 1 , and therefore repeated descriptions will be omitted.

[0126] In the display device DD-2 according to some example embodiments, the first protection pattern FL-2 may be formed in the emission area PXA where light having colors different from each other is emitted. 22 、PXA 23 and PXA 24 The first encapsulation inorganic layer LIL contacts the encapsulation layer TFE in one of the emission regions.

[0127] For example, the emission area PXA 22 、PXA 23 and PXA 24 One of the emission regions PXA24 It can be defined as an emission region to be formed later in the formation process. Since a single photolithography process is performed only on the emission region to be formed later, it can be formed in the same manner as the emission region PXA. 24 Omit overlapping areas Figure 4 Since the second protection pattern SIL has an island pattern shape, the emission area PXA may be omitted. 22 、PXA 23 and PXA 24 One of the emission regions PXA 24 Therefore, the first protection pattern FL-2 may contact the emission area PXA 24 The first encapsulation inorganic layer LIL in.

[0128] According to some example embodiments, since there is no emission region PXA remaining in the subsequent process 24 The second protection pattern SIL is omitted, so the manufacturing cost and process time for the display device DD-2 can be reduced.

[0129] Figure 7 is a cross-sectional view of a display device according to some example embodiments of the present invention. Figures 1 to 4 The components are the same as those of FIG. 1 , and therefore repeated descriptions will be omitted.

[0130] In the display device DD-3 according to some example embodiments, the second electrode E2-3 may be located in the emission area PXA where light having different colors from each other is emitted. 22 、PXA 23 and PXA 24 The first encapsulation inorganic layer LIL contacts the encapsulation layer TFE in one of the emission regions.

[0131] For example, the emission area PXA 22 、PXA 23 and PXA 24 One of the emission regions PXA 24 It can be defined as an emission region to be formed later in the formation process. Since a single photolithography process is performed only on the emission region to be formed later, it can be formed in the same manner as the emission region PXA. 24 Omit overlapping areas Figure 4 Since each of the first protection pattern FL and the second protection pattern SIL has an island pattern shape, the emission area PXA may be omitted. 22 、PXA 23 and PXA 24 One of the emission regions PXA 24Therefore, the second electrode E2-3 may contact the emission region PXA 24 The first encapsulation inorganic layer LIL in.

[0132] According to some example embodiments, since there is no emission region PXA remaining in the subsequent process 24 The first protection pattern FL and the second protection pattern SIL are omitted, so the manufacturing cost and process time for the display device DD-3 can be reduced.

[0133] Figures 8A to 8J is a cross-sectional view illustrating a method for manufacturing a display device according to some example embodiments of the present inventive concept. Figures 1 to 4 The components of FIG. 1 are identical to those of FIG. 1 , and therefore repeated descriptions will be omitted. Figures 8A to 8J Methods for manufacturing a display device according to some example embodiments of the inventive concept are described.

[0134] A method for manufacturing a display device according to some example embodiments of the inventive concepts includes a process of providing an initial display device.

[0135] refer to Figure 8A The initial display device DD-A may be a substrate on which a first electrode E1 connected to a circuit element layer CL, a pixel defining layer PLE having an opening OP defined therein (at least a portion of the first electrode E1 is exposed through the opening OP), and an auxiliary electrode ES covering a portion of the pixel defining layer PLE are formed.

[0136] Afterwards, refer to Figure 8B , a method for manufacturing a display device includes a process of forming a lift-off layer and a process of forming a photoresist layer.

[0137] The peeling layer LOL may be formed on the initial display device DD-A. The peeling layer LOL includes a fluoropolymer. The fluoropolymer contained in the peeling layer LOL may be formed as a polymer containing about 20% by weight to about 60% by weight of fluorine. For example, the fluoropolymer contained in the peeling layer LOL may include at least one of polytetrafluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, a copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, a copolymer of chlorotrifluoroethylene and perfluoroalkyl vinyl ether, a copolymer of tetrafluoroethylene and perfluoroalkyl vinyl ether, and a copolymer of chlorotrifluoroethylene and perfluoroalkyl vinyl ether.

[0138] The lift-off layer LOL may be formed by coating, printing, deposition, etc. When the lift-off layer LOL is formed by coating and printing, a process of forming a photoresist layer PR after curing and polymerization may be performed if necessary.

[0139] The photoresist layer PR is formed on the lift-off layer LOL. The photoresist layer PR is formed by applying a photoresist composite material on the lift-off layer LOL. The photoresist layer PR can be positive or negative. In this embodiment, the positive type will be described as an example.

[0140] Afterwards, refer to Figure 8C , a process of forming an undercut UC is performed.

[0141] The undercut UC may be configured to expose a region of the photoresist layer PR overlapping with the opening OP, and then etch and remove the photoresist layer PR. Here, a portion of the lift-off layer LOL containing the fluoropolymer may be removed to form the undercut UC.

[0142] Afterwards, refer to Figure 8D , a process for forming an organic pattern EL is performed. The organic pattern EL can be formed by depositing a first deposition material containing an organic light-emitting material on the first electrode E1 exposed through the opening OP. Deposition can be performed by front deposition without using a mask. Thus, the first deposition material can be deposited on the portion exposed by the opening OP to form the organic pattern EL, and also deposited on the photoresist layer PR to form a first deposition layer EL-P.

[0143] The organic pattern EL can be formed into multiple layers by depositing one or more of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a light-emitting layer. Here, a variety of deposition materials can be used to deposit these layers. In this case, the first deposition layer EL-P can also be formed into multiple layers.

[0144] Afterwards, refer to Figure 8E , performing a process for forming a second electrode. The second electrode E2 may be formed to be connected to the auxiliary electrode ES. The second electrode E2 may be formed by applying a second deposition material containing a transparent conductive material onto the organic pattern EL exposed through the opening OP. The second electrode E2 may be formed by sputtering, physical vapor deposition (PVD), or electroplating.

[0145] The second electrode E2 may be formed using an isotropic method. Thus, the second electrode E2 may have a surface area greater than that of the entrance of the opening OP and may be formed to cover the upper portion of the organic pattern EL and a portion of the upper portion of the auxiliary electrode ES. Consequently, the second electrode E2 may be electrically connected to the auxiliary electrode ES.

[0146] The second deposition material may also be deposited in a front deposition manner without using a mask. Thus, the second deposition material may be deposited on the organic pattern EL to form the second electrode E2, and also deposited on the first deposition layer EL-P formed on the photoresist layer PR to form the second deposition layer E2-P.

[0147] Afterwards, refer to Figure 8F , performing a process of forming a first protective pattern. The first protective pattern FL may be formed to be connected to the second electrode E2. The first protective pattern FL may be formed by depositing a third deposition material including a metal or a transparent conductive material on the second electrode E2 exposed through the opening OP.

[0148] The first protection pattern FL can be formed using an isotropic method. Thus, the first protection pattern FL can have a surface area greater than the surface area of the entrance of the opening OP and be formed to cover the upper portion of the second electrode E2 and a portion of the upper portion of the auxiliary electrode ES. Thus, the first protection pattern FL can provide electrical connection between the second electrode E2 and the auxiliary electrode ES.

[0149] The deposition of the third deposition material may also be performed in a front deposition manner without using a mask. Thus, the third deposition material may be deposited on the second electrode E2 to form the first protection pattern FL, and also deposited on the second deposition layer E2-P formed on the photoresist layer PR to form a third deposition layer FL-P.

[0150] Afterwards, refer to Figure 8G , a process of forming a second protection pattern is performed. The second protection pattern SIL may be formed to cover the first protection pattern FL. The second protection pattern SIL may be formed by applying a fourth deposition material including an inorganic material on the first protection pattern FL exposed through the opening OP.

[0151] The second protection pattern SIL may be formed using an isotropic method. Thus, the second protection pattern SIL may have a surface area greater than that of the entrance of the opening OP and may be formed to cover the upper portion of the first protection pattern FL and a portion of the upper portion of the auxiliary electrode ES. Thus, the second protection pattern SIL may be used to protect components provided in the organic light-emitting element OD from external impact, etching materials, or external air.

[0152] The deposition of the fourth deposition material may also be performed in a front deposition manner without using a mask. Thus, the fourth deposition material may be deposited on the first protection pattern FL to form the second protection pattern SIL, and also deposited on the third deposition layer FL-P formed on the photoresist layer PR to form the fourth deposition layer SIL-P.

[0153] Afterwards, refer to Figure 8H , a process of removing the lift-off layer and the photoresist layer is performed. The lift-off layer LOL and the photoresist layer PR can be removed by a stripping method using a stripper.

[0154] Afterwards, refer to Figure 8I , Figures 8A to 8HThe process can be repeatedly performed to perform the adjacent emission area PXA 23 and PXA 24 A process of continuously forming organic light emitting elements OD.

[0155] According to some example embodiments, in order to prevent or reduce the 22 In the case where the organic pattern EL on the substrate is exposed to the atmosphere, the organic pattern EL including an organic material may be sealed using the second protective pattern SIL to protect the organic pattern EL from the etching material or the external air.

[0156] According to some example embodiments of the present inventive concept, the second protection pattern SIL may have compressive stress under constant process conditions. Therefore, the lift-off layer LOL and the photoresist layer PR may be recessed to cause defects in the organic light emitting element OD.

[0157] According to some example embodiments of the present inventive concepts, the third deposition layer FL-P and the first protection pattern FL may have an attractive force in a direction opposite to that of the fourth deposition layer SIL-P and the second protection pattern SIL. For example, when each of the fourth deposition layer SIL-P and the second protection pattern SIL has a compressive stress under constant process conditions, each of the third deposition layer FL-P and the first protection pattern FL may have a tensile stress opposite to the compressive stress. Therefore, the compressive stress of each of the fourth deposition layer SIL-P and the second protection pattern SIL can be offset by the tensile stress of each of the third deposition layer FL-P and the first protection pattern FL, thereby preventing or reducing the occurrence of recessing of the lift-off layer LOL and the photoresist layer PR.

[0158] Afterwards, refer to Figure 8J , perform the process of forming the encapsulation layer. The organic light emitting element OD is formed in the emission area PXA 22 、PXA 23 and PXA 24 Afterwards, the encapsulation layer TFE may be formed to cover the entire surface of the organic light emitting element OD.

[0159] According to an embodiment of the present inventive concept, when forming an organic light emitting element, protective patterns having stress in opposite directions may be arranged to protect components provided in the organic light emitting element from external impact, etching materials, external air, etc. Therefore, a display device with improved reliability may be provided.

[0160] It will be apparent to those skilled in the art that various modifications and variations can be made to the inventive concept.Thus, it is intended that the present disclosure covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

[0161] Therefore, the actual protection scope of the inventive concept should be determined by the technical scope of the appended claims and their equivalents.

Claims

1. A display device, comprising: a circuit element layer including transistors; a display element layer, comprising a first electrode connected to the transistor, a second electrode facing the first electrode, an organic pattern between the first electrode and the second electrode, a pixel defining layer having an opening exposing the first electrode, an auxiliary electrode spaced apart from the opening to cover a portion of the pixel defining layer, a first protection pattern covering the second electrode, and a second protection pattern covering the first protection pattern; as well as an encapsulation layer covering the display element layer, wherein the second electrode has an island pattern shape, and the auxiliary electrode electrically connects the second electrodes provided in different organic light emitting elements to each other, and The first protection pattern and the second protection pattern have stress in different directions.

2. The display device according to claim 1, wherein The first protection pattern includes a transparent conductive material.

3. The display device according to claim 1, wherein The second protection pattern includes an inorganic material. The display device according to claim 1 , wherein: The first protection pattern has tensile stress, and the tensile stress of the first protection pattern ranges from 0 MPa to 200 MPa.

5. The display device according to claim 1, wherein The second protection pattern has compressive stress, and the compressive stress of the second protection pattern ranges from -200 MPa to 0 MPa. The display device according to claim 1 , wherein: The first protection pattern has a thickness smaller than that of the second protection pattern.

7. The display device according to claim 6, wherein The first protection pattern has to thickness, and The second protection pattern has to thickness.

8. The display device according to claim 1, wherein The encapsulation layer includes a first encapsulation inorganic layer, a second encapsulation inorganic layer, and an encapsulation organic layer between the first encapsulation inorganic layer and the second encapsulation inorganic layer, each of the first encapsulation inorganic layer and the second encapsulation inorganic layer comprising an inorganic material, and The first encapsulating inorganic layer contacts the second protective pattern and a portion of the auxiliary electrode exposed from the second protective pattern.

9. The display device according to claim 1, wherein The auxiliary electrode includes a lower portion contacting the pixel defining layer and an upper portion facing the lower portion, and A portion of the upper portion is covered by the encapsulation layer.

10. The display device according to claim 9, wherein A remaining portion of the upper portion is covered by a portion of each of the organic pattern, the second electrode, the first protection pattern, and the second protection pattern.

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