Fixture frame assembly, semiconductor package having lead frame and fixture frame, and method for manufacturing the same

Abstract

A molded semiconductor package includes a lead frame having one or more first leads integrally formed with a die pad and extending outwardly from the pad in a first direction. A semiconductor die is attached to the die pad on a first side of the die. A metal clamp of a clamp frame is attached to a power terminal on a second side of the die. One or more second leads integrally formed with the metal clamp extend outwardly from the clamp in a second direction different from the first direction. The die is embedded in a molding compound. The first lead and the second lead are exposed to different sides of the molding compound and do not overlap vertically with each other. Within the molding compound, the clamp transitions from a first level above the power terminal to a second level in the same plane as the leads.

Description

Background Art

[0001] A power semiconductor package includes a power semiconductor die embedded in a molding compound. Electrical connections in the molding compound are formed between the terminals of the power semiconductor die and the package leads. The leads are part of the lead frame to which the power semiconductor die is attached. Some types of power semiconductor packages use a metal clamp to connect the source terminal on the top side of the power semiconductor die to the lead post of the lead frame. The clamp assembly typically includes two parts: the metal clamp itself and the lead post. The two parts are typically welded together, so a pad area is required for attaching the clamp on the lead frame. The clamp pad area consumes space on the lead frame because the attachment of the clamp to the lead frame is completed by welding, diffusion welding or similar processes. The contact area required for the clamp cannot be used for additional die areas in the package. Moreover, the clamp attachment process is completed in a serial manner, so it is slow and costly. In addition, the gate terminal of the power semiconductor is typically contacted by a bonding wire, which requires an additional process step with additional equipment investment and has different requirements on the surfaces on the die and the lead frame.

[0002] Therefore, there is a need for an improved contact structure for a power semiconductor package. Summary of the invention

[0003] According to an embodiment of a method for manufacturing a molded semiconductor package, the method includes: providing a lead frame, the lead frame including a die pad and one or more first leads integrally formed with the die pad and extending outwardly from the die pad in a first direction, the die pad and the one or more first leads being attached to the periphery of the lead frame; attaching a first side of a semiconductor die to the die pad; aligning a fixture frame with the lead frame so that a first pre-bent metal fixture of the fixture frame is vertically aligned with a power terminal on a second side of the semiconductor die opposite to the first side, the fixture frame also including one or more second leads, the one or more second leads being aligned with the first side of the semiconductor die. The first pre-bent metal clamp is formed as a whole, extends outward from the first pre-bent metal clamp along a second direction different from the first direction and is attached to the periphery of the clamp frame; the first pre-bent metal clamp is attached to the power terminal on the second side of the semiconductor tube core; the semiconductor tube core is embedded in the molding compound so that the one or more first leads and the one or more second leads protrude from the molding compound in a substantially planar direction and do not overlap vertically with each other; and on the outside of the molding compound, the one or more first leads are separated from the periphery of the lead frame and the one or more second leads are separated from the periphery of the clamp frame.

[0004] Separating the one or more first leads from the periphery of the lead frame and separating the one or more second leads from the periphery of the clamp frame on the outside of the molding compound may include: stamping the one or more first leads and the one or more second leads on the outside of the molding compound, or cutting the one or more first leads and the one or more second leads on the outside of the molding compound.

[0005] Either alone or in combination, the method may further include attaching a second pre-bent metal clamp of the clamp frame to a control terminal on the second side of the semiconductor die, wherein the clamp frame further includes a third lead extending outward from the second pre-bent metal clamp and attached to the periphery of the clamp frame, wherein after the semiconductor die is embedded in the molding compound, the third lead protrudes from the molding compound and does not vertically overlap with the one or more first leads.

[0006] Either alone or in combination, the method may further include separating the third lead from the periphery of the clamp frame outside the molding compound via the same stamping process used to separate the one or more first leads from the periphery of the lead frame and to separate the one or more second leads from the periphery of the clamp frame.

[0007] Either individually or in combination, the one or more first leads may protrude from a first side of the molding compound after being separated from the periphery of the lead frame, and the one or more second leads may protrude from a second side of the molding compound different from the first side after being separated from the periphery of the clamp frame.

[0008] Either alone or in combination, the method may further include electroplating portions of the one or more first leads protruding from the first side of the molding compound and portions of the one or more second leads protruding from the second side of the molding compound to form wettable lead surfaces on different sides of the molding compound.

[0009] Alone or in combination, the leadframe may be unbent.

[0010] Alone or in combination, the clamp frame may include alignment features to assist in aligning the clamp frame with the lead frame.

[0011] Alone or in combination, the clip frame may be stacked on top of the lead frame in the area of ​​mold runners used during embedding of the semiconductor die in the molding compound.

[0012] Alone or in combination, the method may further include pressing the clamp frame against the lead frame to provide a tight seal during embedding of the semiconductor die in the molding compound.

[0013] According to an embodiment of a molded semiconductor package, the molded semiconductor package may include: a lead frame, the lead frame including a die pad and one or more first leads, the one or more first leads are integrally formed with the die pad and extend outwardly from the die pad in a first direction; a semiconductor die, the semiconductor die attached to the die pad on a first side of the semiconductor die; a clamp frame, the clamp frame including a first metal clamp and one or more second leads, the first metal clamp being attached to a power terminal on a second side of the semiconductor die opposite to the first side, the one or more second leads are integrally formed with the first metal clamp and extend outwardly from the first metal clamp in a second direction different from the first direction; and a molding compound, the molding compound embedding the semiconductor die, wherein the one or more first leads and the one or more second leads are exposed to different sides of the molding compound and do not vertically overlap each other, wherein, within the molding compound, the first metal clamp transitions from a first level above the power terminal on the second side of the semiconductor die to a second level in the same plane as the one or more first leads and the one or more second leads.

[0014] Either alone or in combination, the clamp frame may further include a second metal clamp attached to a control terminal on the second side of the semiconductor die, and a third lead extending outward from the second metal clamp, and the third lead may be exposed to one side of the molding compound and not vertically overlap with the one or more first leads.

[0015] Either alone or in combination, the one or more first leads may protrude from a first side of the mold compound, and the one or more second leads may protrude from a second side of the mold compound different from the first side.

[0016] Portions of the one or more first leads protruding from the first side of the mold compound and portions of the one or more second leads protruding from the second side of the mold compound are at least partially plated, either alone or in combination, to form wettable lead surfaces on different sides of the mold compound.

[0017] Either alone or in combination, the first metal clip may be bent at at least two different places within the mold compound.

[0018] Either individually or in combination, the semiconductor die may be a power transistor die, the power terminal on the first side of the power semiconductor die may be a drain or collector terminal, the power terminal on the second side of the power semiconductor die may be a source or emitter terminal, and the power semiconductor die may be attached to the die pad in a drain-down or collector-down configuration.

[0019] Either individually or in combination, the semiconductor die may be a power transistor die, the power terminal on the first side of the power semiconductor die may be a source or emitter terminal, the power terminal on the second side of the power semiconductor die may be a drain terminal, and the power semiconductor die may be attached to the die pad in a source-down or emitter-down configuration.

[0020] Either alone or in combination, the lead frame may include additional leads attached to control terminals at the first side of the power semiconductor die, and the additional leads may be exposed to the same side of the mold compound as the one or more first leads.

[0021] Either individually or in combination, the die pad and the first metal clamp are bent in the same direction, and the first metal clamp is bent to a lesser extent than the die pad, so that the one or more first leads formed integrally with the die pad and the one or more second leads formed integrally with the first metal clamp terminate in the same plane and are configured to be surface mounted on the first side of the molded semiconductor package.

[0022] Alone or in combination, the die pad is at least partially uncovered by the molding compound on a second side of the molded semiconductor package opposite the first side of the molded semiconductor package to provide a heat dissipation path on an opposite side of the molded semiconductor package configured for surface mounting.

[0023] According to an embodiment of a method for manufacturing a molded semiconductor package, the method includes: providing a lead frame panel, the lead frame panel including a plurality of unit lead frames connected to each other, each unit lead frame including a die pad and one or more first leads, the one or more first leads being integrally formed with the die pad and extending outwardly from the die pad in a first direction, the die pad and the one or more first leads being attached to the periphery of the unit lead frame; attaching a separate semiconductor die to each of the die pads on a first side, each semiconductor die including a power terminal on a second side opposite to the first side; aligning a fixture frame panel with the lead frame panel, the fixture frame panel including a plurality of unit fixture frames connected to each other, each unit fixture frame including a first pre-bent metal fixture and one or more second leads, the first pre-bent metal fixture being attached to the The corresponding power terminals on the second side of one of the semiconductor tube cores are vertically aligned, and the one or more second leads are integrally formed with the first pre-bent metal clamp, extend outward from the first pre-bent metal clamp along a second direction different from the first direction and are attached to the outer periphery of the unit clamp frame; each first pre-bent metal clamp is attached to the power terminal on the second side of the corresponding semiconductor tube core; the semiconductor tube core is embedded in the molding compound so that each of the one or more first leads and each of the one or more second leads protrude from the molding compound in a substantially planar direction and do not overlap vertically with each other; and on the outside of the molding compound, each of the one or more first leads is separated from the outer periphery of the corresponding unit lead frame and each of the one or more second leads is separated from the outer periphery of the corresponding unit clamp frame.

[0024] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The elements of the drawings are not necessarily to scale relative to each other. Similar reference numerals indicate corresponding similar parts. Unless mutually exclusive, the features of the various illustrative embodiments may be combined. The embodiments are illustrated in the drawings and described in detail in the following detailed description.

[0026] Figure 1A to Figure 1C An embodiment of a molded semiconductor package having a leadframe to which a semiconductor die is attached and a separate clip frame for contacting one or more terminals on a top side of the semiconductor die is shown. Figure 1A The semiconductor package is shown after molding but before singulation. Figure 1B The semiconductor package is shown after die attach but before placement of the fixture frame. Figure 1CThe semiconductor package is shown after placement of the fixture frame but before molding.

[0027] Figure 2 An embodiment of a method of manufacturing molded semiconductor packages, each having a leadframe to which a semiconductor die is attached and a separate clip frame for contacting one or more terminals on a top side of the semiconductor die, is shown.

[0028] Figures 3A to 3D Shows Figure 2 lead frame panel and jig frame panel during different stages of the manufacturing method shown in, Figure 3A and Figure 3C An enlarged partial view.

[0029] Figure 4A and Figure 4B Corresponding partial views of clamp frame panels according to other embodiments are shown.

[0030] Figure 5 A perspective view of a portion of a clip frame panel is shown vertically aligned with a corresponding portion of a lead frame panel according to another embodiment.

[0031] Fig. 6A and Figure 6B Shows from Figure 5 8 is a diagram showing different views of an embodiment of a semiconductor package as produced by a panel assembly but prior to molding.

[0032] Fig. 7A and Figure 7B Shows Figure 6A-6B A different view of the semiconductor package shown in , but after molding.

[0033] Figure 8 Shows Figure 7A-7B , a cross-sectional view of a semiconductor package after surface mounting to a circuit board and top-side cooling via a heat sink.

[0034] Specific implementation method

[0035] Embodiments described herein provide a molded semiconductor package including a lead frame to which a semiconductor die is attached and a separate fixture frame for contacting one or more terminals on the top side of the semiconductor die. Each fixture for contacting a terminal on the top side of the semiconductor die is disposed in a frame separate from the lead frame to which the semiconductor die is attached. Thus, the lead frame contains leads and contacts for some but not all of the die terminals. The separate fixture frame provides leads and contacts for the remaining die terminals.

[0036] Figure 1A to Figure 1CAn embodiment of a molded semiconductor package 100 is shown prior to singulation, ie, physical separation from other molded semiconductor packages formed simultaneously. Figure 1A The semiconductor package 100 is shown after molding but before singulation. Figure 1B The semiconductor package 100 is shown after die attach but before placement of a fixture frame. Figure 1C The semiconductor package 100 is shown after placement of the fixture frame but before molding.

[0037] The molded semiconductor package 100 includes a lead frame 102 and a separate fixture frame 104. The lead frame 102 includes a die pad 106 and one or more first leads 108, which are integrally formed with the die pad 106 and extend outwardly from the die pad 106 along a first direction x1. That is, the die pad 106 and the one or more first leads 108 are formed or composed of the same material without a joint and are at the same potential (e.g., power supply, ground, etc.). In some cases, only a single first lead 108 may be integrally formed with the die pad 106 and extend outwardly from the die pad 106 along the first direction x1. For example, the die pad 106 and the one or more first leads 108 may be integrally formed with the die pad 106 and extend outwardly from the die pad 106 along the first direction x1. Figure 1B The lead frame 102 may be cut along the dashed line marked A1 in the figure or along the dashed line marked A2. In other cases, more than one first lead 108 may be integrally formed with the die pad 106 and extend outwardly from the die pad 106 along the first direction x1. Figure 1B The dotted line marked A3 in FIG. 1 cuts the lead frame 102. Therefore, the term "first lead" is used herein to refer to one or more first leads 108 that may be integrally formed with the die pad 106 and extend outwardly from the die pad 106 along the first direction x1.

[0038] In each case, the die pad 106 is an area of ​​the lead frame 102 to which one or more semiconductor dies 110 are attached. At least one semiconductor die 110 is attached to the die pad 106 of the lead frame 102, and each semiconductor die 110 attached to the die pad 106 is embedded in a plastic molding compound 112, such as an epoxy molding compound.

[0039] The semiconductor die 110 attached to the lead frame 102 can be a vertical device because the primary current path is between the top and bottom sides of the die 110. In this case, the power terminals of the semiconductor die 110 (out of view) are attached to the die pad 106 of the lead frame 102. The semiconductor die 110 can instead be a lateral device because the primary current path is along the top side of the die 110. In this case, all of the power terminals of the semiconductor die 110 are disposed on the top side of the die 110 facing away from the die pad 106 of the lead frame 102. More than one semiconductor die 110 can be attached to the lead frame 102 and / or the molded semiconductor package 100 can include more than one lead frame 102, with one or more semiconductor die 110 attached to each lead frame 102.

[0040] The independent fixture frame 104 of the molded semiconductor package 100 includes at least a first metal fixture 114 and one or more second leads 116, which are integrally formed with the first metal fixture 114 and extend outwardly from the first metal fixture 114 along a second direction x2 different from the first direction x1. In some cases, only a single second lead 116 may be integrally formed with the first metal fixture 114 and extend outwardly from the first metal fixture 114 along the second direction x2. For example, Figure 1C The dotted line marked as B1 in FIG. 1 cuts the fixture frame 104. In other cases, more than one second lead 116 may be integrally formed with the first metal fixture 114 and extend outward from the first metal fixture 114 along the second direction x2. Figure 1C The dashed line marked as B2 in FIG. 1 cuts the clamp frame 104. Therefore, the term "second lead" is used herein to refer to one or more second leads 116 that may be integrally formed with the first metal clamp 114 of the clamp frame 104 and extend outwardly from the first metal clamp 114 along the second direction x2.

[0041] In each case, the different directions x1, x2 in which the first and second leads 108, 116 extend depend on the type of molded semiconductor package 100. For example, for a SSO8 (shrink small outline package), TSOP (thin small outline package), TSON (thin small outline no lead), TOLL (transistor outline no lead) or other type of dual row flat package, the first leads 108 of the lead frame 102 and the second leads 116 of the clamp frame 104 extend in opposite directions x1, x2 and are disposed on opposite sides of the molded semiconductor package 100. For a QFP (quad flat package), QFN (quad flat no lead package) or other type of quad row flat package, the first leads 108 of the lead frame 102 and the second leads 116 of the clamp frame 104 extend in different, but not necessarily opposite, directions x1, x2 and are disposed on different, but not necessarily opposite sides of the molded semiconductor package 100. In the case of multiple first leads 108 and / or multiple second leads 118, all leads 108 / 116 of the same kind (e.g., power, ground, etc.) do not necessarily need to extend in the same direction. For example, for a QFN package, one first lead 108 may be provided on each side of the lead frame 102, and all second leads 116 may be provided on the fixture frame 104, for example, also on four sides. Even in this case, the first leads 108 of the lead frame 102 will not vertically overlap any of the second leads 116 of the fixture frame 104.

[0042] Figure 1A to Figure 1C The molded semiconductor package 100 shown in the Figure is shown as a dual-row leadless flat package. In general, the molded semiconductor package embodiments described herein can be implemented in any type of dual-row or quad-row flat package. For some types of packages, a portion of each first lead 108 of the lead frame 102 and a portion of each second lead 116 of the clamp frame 104 are not covered by the mold compound 112. The uncovered portions of the leads 108, 116 may be flush, recessed, or slightly protruding from the mold compound 112. For other types of packages, the first leads 108 of the lead frame 102 and the second leads 116 of the clamp frame 104 protrude outward from different, but not necessarily opposite, sides 120 of the mold compound 112.

[0043] In each case, the first leads 108 of the lead frame 102 and the second leads 116 of the clip frame 104 are exposed to different sides 120 of the mold compound 112 but do not vertically overlap each other. Figure 1A Each of the first leads 108 of the lead frame 102 and each of the second leads 116 of the clip frame 104 are shown to be exposed to a different side 120 of the mold compound 120 . Figure 1CIt is shown that each first lead 108 of the lead frame 102 and each second lead 116 of the clamp frame 104 do not vertically overlap each other. One or more tie bars 122 may be provided to further stabilize the die pad 106 during the die attach and molding process. The tie bars 122 are severed during the separation process, as are each first lead 108 of the lead frame 102 and each second lead 116 of the clamp frame 104, to physically separate the molded semiconductor package 100 from other molded semiconductor packages manufactured simultaneously.

[0044] The metal clip 114 of the clip frame 104 transitions from a first level above the power terminals 124 on the top side of the semiconductor die 110 to a second level in the same plane as the first leads 108 of the lead frame 102 and the second leads 116 of the clip frame 104 within the mold compound 112. That is, the metal clip 114 of the clip frame 104 may be pre-bent so that the clip 114 may be attached to the power terminals 124 on the top side of the semiconductor die 110, for example, by welding, and so that each of the clip frame leads 116 formed integrally with and extending outwardly from the metal clip 114 may reach the same level as the first leads 108 of the lead frame 102. In one embodiment, the metal clip 114 of the clip frame 104 may be bent at at least two different places 126, 128 within the mold compound 112 to provide a transition from the first level to the second level. The lead frame 102 may not be bent, allowing a die attach material (not shown), such as solder paste, sintering paste, glue, etc., to be easily applied to the die pad 106 of the lead frame 102 using a printing process such as stencil printing or screen printing, or a dispensing or jetting process, etc. Even if the lead frame 102 is not bent, the lead frame 102 may still include cast areas, dimples, grooves, etc.

[0045] By using a separate clamp frame 104 to implement some of the package leads, the size of the die pad 106 to which the semiconductor die 110 is attached can be increased, for example, by about 20% or more, because the metal clamp 116 is not attached to a separate lead post of the lead frame 102. Instead, each lead 116 provided by the clamp frame 104 is integrally formed with the metal clamp 116 and terminates at the same level as the first lead 108 of the lead frame 102. Therefore, no separate lead post is required to accommodate the metal clamp 116. By using the clamp frame 104 described herein, the area allocated for contacting the separate lead posts with a conventional metal clamp can be used to accommodate a larger semiconductor die without increasing the overall size of the molded semiconductor package 100.

[0046] In one embodiment, the semiconductor die 110 is a vertical power transistor die, such as a power MOSFET (metal oxide semiconductor field effect transistor) die, an IGBT (insulated gate bipolar transistor) die, etc., and the power terminal on the bottom side of the power semiconductor die 110 (out of view) is a drain or collector terminal. According to the present embodiment, the power terminal 124 on the top side of the power semiconductor die 110 is a source or emitter terminal, and the power semiconductor die 110 is attached to the die pad 106 of the lead frame 102 in a drain-down configuration in the case of a MOSFET, or a collector-down configuration in the case of an IGBT. Further according to the present embodiment, the control (gate) terminal 130 of the semiconductor die 110 is located on the top side of the die 110 having the source terminal 124. The clamp frame 104 may also include an additional metal clamp 132 attached to the control terminal 130 on the top side of the semiconductor die 110 and an additional lead 134 extending outwardly from the additional metal clamp 132 and formed integrally with the additional metal clamp 132. The additional leads 134 of the clamp frame 104 are exposed on one side of the mold compound 112 and do not vertically overlap with the first leads 108 of the lead frame 102. The additional metal clamp 132 of the clamp frame 104 can transition from a first level above the power terminals 124 on the top side of the semiconductor die 110 to a second level in the same plane as the leads 108 of the lead frame 102 and the leads 116, 134 of the clamp frame 104. Figure 1C Such an additional metal clamp 132 is shown provided as part of the clamp frame 104 .

[0047] By providing the additional metal clamp 132 as part of the clamp frame 104, no wire bonds are needed to contact the control terminal 130 on the top side of the semiconductor die 110, since the gate contact is also provided by the clamp frame 104. However, wire bonds may be used to contact the control terminal 130 on the top side of the semiconductor die 110 instead of the clamp frame 104. In this case, the bond wire connection would extend from the control terminal 130 on the top side of the semiconductor die 110 to an additional lead (not shown) of the lead frame 102 or an additional lead (also not shown) of the clamp frame 104.

[0048] In another embodiment, the semiconductor die 110 is a vertical power transistor die, and the power terminal on the bottom side of the power semiconductor die 100 is a source or emitter terminal. According to the present embodiment, the power terminal 124 on the top side of the power semiconductor die 110 is a drain or collector terminal, and the die 110 is attached to the die pad 106 of the lead frame 102 in a source-down configuration in the case of a MOSFET, or an emitter-down configuration in the case of an IGBT. Further according to the present embodiment, the control (gate) terminal 130 of the semiconductor die is located on the bottom side of the die 110 having the source or emitter terminal. The lead frame 102 may include additional leads (not shown) attached to the control terminal 130 on the bottom side of the power semiconductor die 110. The additional leads of the lead frame 102 may be exposed on the same side of the mold compound 112 as the first leads 108 of the lead frame 102.

[0049] In yet another embodiment, the semiconductor die 110 is a lateral power transistor die, such as a HEMT (high electron mobility transistor) die, a driver die for a power transistor die, a controller die, etc. According to this embodiment, all power terminals are disposed on the top side of the power semiconductor die 110 and a thermal connection is provided between the back side of the die 110 and the die pad 106 of the lead frame 102.

[0050] The molded semiconductor package 100 can use different interconnection technologies to contact the semiconductor die 110 and the metal clamp 114 of the clamp frame 104. Individually or in combination, more than one semiconductor die can be embedded in the mold compound 112, and the clamp frame 104 can include more than one metal clamp to accommodate different dies. If more than one terminal is provided on the top side of the semiconductor die 110, the clamp frame 104 can be used as an exclusive interconnection of all terminals on the top side of each semiconductor die. Alternatively, if more than one terminal is provided on the top side of the semiconductor die 110, the clamp frame 104 can be used in combination with other interconnection types, such as wire bonding, metal strips, etc. to form a connection with the terminal on the top side of each semiconductor die. Individually or in combination, in the case of including more than one semiconductor die 110 in the same molded semiconductor package 100, the clamp frame 104 can provide one or more interconnections between multiple dies. For example, the clamp frame 104 can provide interconnection between an IGBT power transistor die and a freewheeling diode die included in the same molded semiconductor package 100. In another example, the clamp frame 104 can connect two power transistor dies (e.g., MOSFETs) included in the same molded semiconductor package 100 via a half-bridge configuration. One power transistor die can be mounted in a drain-down configuration and the other power transistor die can be mounted in a source-down configuration. In another case, both power transistor dies can be mounted in the same drain-down or source-down configuration. In each case, the clamp frame 104 can be used to connect two or more semiconductor dies included in the same molded semiconductor package 100 at the respective top sides of the dies.

[0051] Figure 2 An embodiment of a method of manufacturing a molded semiconductor package is shown, each molded semiconductor package having a lead frame to which a semiconductor die is attached and a separate clamp frame for contacting one or more terminals on a top side of the semiconductor die. Figure 1A to Figure 1C The molded semiconductor package 100 is shown and described above. Figures 3A to 3D Shows Figure 2 1 and 2. The lead frame panel 300 and the fixture frame panel 302 during different stages of the manufacturing method shown in FIG. Figure 3A and Figure 3C An enlarged partial view.

[0052] Figure 2The manufacturing method shown in includes providing a lead frame panel 300, which includes a plurality of unit lead frames 304 connected to each other (frame 200). Each unit lead frame 304 includes a die pad 306 and one or more first leads 308, which are integrally formed with the die pad 306 and extend outwardly from the die pad 306 along a first direction x1. The die pad 306 and the one or more first leads 308 are attached to the periphery 310 of the corresponding unit lead frame 304. One or more connecting rods 312 may be provided to further fix each corresponding die pad 306 to the periphery 310 of the corresponding unit lead frame 304. The lead frame panel 300 can be formed of a metal sheet, and typical techniques such as stamping, punching, etching, etc. can be used to form the lead frame features described herein. Exemplary materials for the lead frame panel 300 include metals such as copper, aluminum, nickel, iron, zinc, etc. and alloys thereof.

[0053] Figure 2 The manufacturing method shown in FIG. 2 also includes attaching an individual semiconductor die 314 to each die pad 306 of the lead frame panel 300 on the bottom side (block 210 ). Figure 3A Several lead frame units 304 of the lead frame panel 300 are shown after a die attach process. Each semiconductor die 314 includes a power terminal 316 on the top side of the die. Depending on the type of semiconductor die 314, each die 314 may also have a power terminal at the bottom side of the die (out of view). The lead frame panel 300 may be unbent, allowing for easy application of die attach material such as solder paste, sintering paste, glue, etc. to the die pad 306 of each unit lead frame 304. Even if the lead frame panel 300 is unbent, the lead frame panel 300 may still include cast areas, indentations, grooves, etc. The die attach material may be applied to the die pad 306 using typical processes, such as a printing process (e.g., stencil printing, screen printing, etc.), a dispensing process, a spraying process, etc. Each semiconductor die 314 may also include a control (gate) terminal 318 on the top side of the die or the bottom side of the die (e.g., for power transistors).

[0054] Figure 2 The manufacturing method shown in FIG. 2 also includes vertically aligning the fixture frame panel 302 with the lead frame panel 300 (block 220 ). Figure 3B A fixture frame panel 302 is shown vertically aligned with the lead frame panel 300, Figure 3CAn enlarged area of ​​the overlapped structure is shown. The jig frame panel 302 can be pressed against the lead frame panel 300 to provide a tight seal during the molding of the semiconductor die 314. The unit jig frames 304 can be stacked on top of corresponding unit jig frames 320 in the mold runner 322 area used by the jig frame panel 302 during the molding process. Typically, the jig frame panel 302 includes a plurality of unit jig frames 320 connected to each other. Each unit jig frame 320 includes a first pre-bent metal jig 324 vertically aligned with a corresponding power terminal 316 on the top side of one of the semiconductor dies 314, and one or more second leads 326 integrally formed with the first pre-bent metal jig 324. The metal clip 324 is pre-bent before the package assembly process to form the metal clip 324 so that after assembly, the clip 324 is connected to the front side of the semiconductor tube core 314, and each second lead 326 of the unit clip frame 320 is at the same level as each first lead 308 of the unit lead frame 304.

[0055] The second leads 326 of each unit clamp frame 320 extend outward from the first pre-bent metal clamp 324 in a second direction x2 that is different from the extension direction x1 of the first leads 308 of the corresponding unit lead frame 304, and are attached to the outer periphery 328 of the unit clamp frame 320. The first pre-bent metal clamp 324 of the unit clamp frame 320 can transition from a first level that is higher than the power terminals 316 on the top side of the corresponding semiconductor die 314 to a second level in the same plane as the first leads 308 of the unit lead frame 304 and the second leads 326 of the unit clamp frame 320, as described previously herein. For example, the first metal clamp 324 of the unit clamp frame 320 can be bent at least two different places to provide a transition from the first level to the second level.

[0056] Figure 2The manufacturing method shown in also includes attaching each first pre-bent metal clip 324 of the unit clamp frame 320 to the power terminal 316 on the top side of the corresponding semiconductor die 314 (block 230). Force / weight can be applied during the clamp attachment process to achieve the correct height of the unit clamp frame 320. Each first pre-bent metal clip 324 of the unit clamp frame 320 can be attached to the second power terminal 316 on the top side of the corresponding semiconductor die 314 using the same or different type of die attachment material used to attach the semiconductor die 314 to the die pad 306 of the unit lead frame 304. One or both of the joints between the die pad 306 and the die 314 and / or between the metal clip 324 and the top side power terminal 316 of the die 314 can be achieved by, for example, diffusion welding, so that no additional application of connecting material is performed. In turn, each first pre-bent metal clamp 324 of the unit clamp frame 320 may be attached to the power supply terminal 316 on the top side of the corresponding semiconductor die 314 before attaching the semiconductor die 314 to the corresponding unit lead frame 304. That is, the process may be performed before block 210. Figure 2 In block 230. Generally, unless explicitly stated, no particular order of steps is required. In either case, after the chip assembly process, soldering, sintering, etc. of the die attach area can be completed by, for example, reflow.

[0057] In the case where the semiconductor die 314 has a control (gate) terminal 318 on the top side of the die 314, the unit clamp frames 320 can each also include a second pre-bent metal clamp 330. The second metal clamp 330 of the unit clamp frame 320 can be pre-bent in the same manner as the first metal clamp 324 of the unit clamp frame 320 to transition from the same first level above the power terminals 316 on the top side of the semiconductor die 314 to a second level in the same plane as the first leads 308 of the unit lead frame 304 and the second leads 326 of the unit clamp frame 320. Each unit clamp frame 320 can also include additional leads 332 extending outward from the second pre-bent metal clamp 330 and attached to the periphery 328 of the unit clamp frame 320.

[0058] In the case where the unit clamp frame 320 includes a second pre-bent clamp 330 for contacting the control terminal 318 of the semiconductor die 314, the manufacturing method can also include attaching the second pre-bent metal clamp 330 of each unit clamp frame 320 to the control terminal 318 on the top side of the corresponding semiconductor die 314, thereby providing a gate contact of the metal clamp 330 instead of a wire bond. As previously described herein, a wire bond connection can be used instead, or the control terminal 318 can be provided on the bottom side of the semiconductor die 314 instead of the top side, in which case each unit lead frame 304 includes an additional lead (not shown) for contacting the gate terminal 318 on the bottom side of the semiconductor die 314.

[0059] Figure 2 The manufacturing method shown in also includes embedding the semiconductor die 314 in the molding compound 334 so that each first lead 308 of the unit lead frame 304 and each second lead 326 of the unit clamp frame 320 are in a substantially planar direction, e.g. Figures 3A to 3D The molded components 330 protrude from the mold compound 334 in the x1 and x2 directions in FIG. 1 and do not vertically overlap each other (block 240 ). Figure 3D A semiconductor die 314 is shown embedded in a mold compound 334. The cell fixture frame 320 may be pressed against the corresponding cell lead frame 304 to provide a tight seal during embedding of the semiconductor die 314 in the mold compound 334. The cell lead frame 304 may be partially etched or cast from the bottom side to allow for a larger die pad at a given insulation distance and / or to improve locking with the mold compound 334.

[0060] For each molded semiconductor package 336, the leads 308 of the unit lead frame 304 and the leads 326, 332 of the fixture frame 320 are in different, but not necessarily opposite, directions, e.g. Figures 3A to 3D The semiconductor die 314 extends in the x1 and x2 directions of the molded semiconductor package 336 and is disposed on different but not necessarily opposite sides of the molded semiconductor package 336. The semiconductor die 314 may be embedded in the molding compound 334 using any typical molding process, such as injection molding, extrusion compression molding, film assisted molding (FAM), reaction injection molding (RIM), resin transfer molding (RTM), map molding, blow molding, etc. Common molding compounds and resins include, but are not limited to, thermosetting resins, gel elastomers, sealants, potting compounds, composites, optical gradient materials, etc.

[0061] Figure 2 The manufacturing method shown in the figure also includes separating each lead 308 from the outer periphery 310 of the corresponding unit lead frame 304 and separating each lead 326, 332 from the outer periphery of the corresponding unit clamp frame 320 at the outer side of the mold compound 334. In one embodiment, each lead 308 of the unit lead frame 304 is separated from the outer periphery of the corresponding unit lead frame 304 and each lead 326, 332 of the unit clamp frame 320 is separated from the outer periphery 328 of the corresponding unit clamp frame 320 at the outer side of the mold compound 334 by stamping the leads 308, 326, 332 at the outer side of the mold compound 334. In another embodiment, each lead 308 of the unit lead frame 304 is separated from the periphery of the corresponding unit lead frame 304 and each lead 326, 332 of the unit clamp frame 320 is separated from the periphery 328 of the corresponding unit clamp frame 320 on the outside of the molding compound 334 by cutting the leads 308, 326, 332 on the outside of the molding compound 334.

[0062] Since the leads 308, 326, 332 are openly arranged and free of molding compound 334, lead cutting is simpler and no (metal) smearing effects should occur, especially since the leads 326, 332 of the clamp frame 320 do not vertically overlap the leads 308 of the lead frame 304. The overall complexity of the manufacturing process is also reduced by using only a single clamp frame panel 302 (which makes the assembly process easy because, regardless of whether the frames 300, 302 are provided on top of each other by a person or a machine, only a single action is required instead of attaching several metal clamps (or rows of metal clamps) to a single lead frame panel). In addition, using a single clamp frame panel 302 also eliminates the problem of clamp tilting / rotation compared to attaching several metal clamps (or rows of metal clamps) to a single lead frame panel, because all unit clamp frames 320 are fixed to the same clamp frame panel 302.

[0063] In the case where each unit clamp frame 320 includes a second pre-bent clamp 330 for contacting the control terminal 316 on the top side of the corresponding semiconductor die 314, the manufacturing method may also include separating the leads 332 integrally formed with the second pre-bent metal clamp 330 from the outer periphery 328 of the corresponding unit clamp frame 320 via the same separation process on the outside of the mold compound 334, such as punching or cutting used to separate each lead 308 from the outer periphery 310 of the corresponding unit lead frame 304 and each lead 326, 332 from the outer periphery 328 of the corresponding unit clamp frame 320. For some types of packages, a portion of each lead 308 of the unit lead frame 304 and a portion of each lead 326, 332 of the unit clamp frame 320 of each molded package 336 may not be covered by the mold compound 334. The uncovered portions of the leads 308, 326, 332 may be flush, recessed, or slightly protruding from the mold compound 334. For some types of packages, each lead 308 of the unit lead frame 304 and each lead 326 , 332 of the unit clip frame 320 of each molded package 336 may protrude outwardly from different, but not necessarily opposing, sides of the mold compound 334 .

[0064] The manufacturing method may also include electroplating or chemically plating portions of each lead 308 of the unit lead frame 304 and portions of each lead 326, 332 of the unit fixture frame 320 that protrude from different sides 338 of the molding compound 334 to form wettable lead surfaces at different sides 338 of the molding compound 334 of each molded semiconductor package 336, allowing for easier inspection of subsequent solder connections between the leads 308, 326, 332 of the molded semiconductor package 336 to a circuit board because the wetted / solder joints are easily visible.

[0065] Figures 3A to 3D The assembly shown in FIG. 2 may instead be manufactured upside down, with the fixture attachment process (block 230) performed before the die attachment process (block 210), and / or printing processes such as stenciling or screen printing may be used independently on the lead frame panel 300 and the fixture frame panel 302. For power transistor dies, the semiconductor die 314 may instead be placed source down (or emitter down), and each unit lead frame 304 may provide source and gate contacts, while the metal fixture 334 of the corresponding unit fixture frame 320 forms a single pad for the drain only. Each unit fixture frame panel 302 and / or lead frame panel 300 may have alignment features 340, such as dimples, holes, etc., to assist in aligning the fixture frame panel 302 and the corresponding lead frame panel 300. For example, an optical alignment process or a pin alignment process may be used to align the fixture frame panel 302 and the lead frame panel 300.

[0066] Figure 4A and Figure 4B A corresponding partial view of a fixture frame panel 302 according to other embodiments is shown. There may be a crossover between the unit fixture frames 320 and the corresponding unit lead frames 304.

[0067] To reduce the insulation distance and avoid short circuits, the edge of the first metal clamp 324 may include a wavy feature 400 that extends upward in a wavy manner at the edge of the corresponding semiconductor chip 314. To accommodate more than one die size per clamp 324, additional wavy features 402 may be added inward from the edge of the clamp. For example, each first metal clamp 324 may have two intersecting (lateral) wavy features 402 to accommodate four different chip sizes. Figure 4A The areas marked as 404, 406 and Figure 4B The areas marked 408, 410 in the figure represent areas of different chip sizes that can be accommodated by the same first metal fixture 324 by providing wavy features 400, 402. The wavy features 400, 402 can also be formed as slots or cast bottom sides or some combination of the two. Features such as indentations, slots, crosses, etc. can be applied to the first metal fixture 324, for example to mitigate die tilt / rotation and / or improve mold locking.

[0068] Heat dissipation can be enhanced by implementing top-side cooling for a surface mounted device (SMD) package, where the top side is the side of the SMD package opposite to the side on which the leads of the SMD package are surface mounted to a circuit board such as a printed circuit board (PCB). In a typical SMD-based design, the output power is constrained by the thermal limits of the PCB material because the heat is dissipated through the circuit board. With top-side cooling, thermal decoupling of the circuit board and the semiconductor is provided, which achieves higher power density and / or improved system life. Effective top-side cooling means that the dissipated heat can be extracted from the circuit board, thereby increasing the current that the device can safely carry. Described next is the top-side cooling enhancement of the aforementioned embodiments of this document.

[0069] Figure 5 A portion of the fixture frame panel 500 is shown vertically aligned with a corresponding portion of the lead frame panel 502. For ease of illustration, the semiconductor die is Figure 5 504 are not shown as being attached to the corresponding die pads 504 of the lead frame panel 502. As previously described herein, any type of semiconductor die may be attached to the die pads 504 of the lead frame panel 502. One or more leads 506 are integrally formed with each die pad 504 of the lead frame panel 502.

[0070] The fixture frame panel 500 includes at least a first pre-bent metal fixture 508 and one or more leads 510 integrally formed with the first pre-bent metal fixture 508, as previously described herein. During the package assembly process, for example, as previously described herein according to Figure 2 As described above, the jig frame panel 500 is aligned with the lead frame panel 502 so that each first pre-bent metal jig 508 of the jig frame panel 500 is vertically aligned with the power terminal of the corresponding semiconductor die on the side facing the jig frame panel 500. Figure 5 The semiconductor die is not shown in the drawing to provide an unobstructed view of the lead frame panel 502. The fixture frame panel 500 may also include an additional pre-bent metal fixture 512, such as a control terminal for attaching to the top side of the semiconductor die corresponding to the die pad 504 of the lead frame panel 502, and an additional lead 514 formed integrally with the additional pre-bent metal fixture 508.

[0071] according to Figure 5 In the embodiment shown in FIG. 5 , the lead frame panel 502 is also pre-bent. For example, each die pad 504 and / or each lead 506 integrally formed with a corresponding die pad 504 of the lead frame panel 502 may be pre-bent as shown in FIG. Figure 5 The upward bend is shown so that the area of ​​each die pad 504 to which the semiconductor die is to be attached is disposed in a different plane than the rest of the lead frame panel 502 .

[0072] The fixture frame panel 500 is also pre-bent, as previously described herein. Figure 5 In the embodiment shown in , each first metal clamp 508 and / or each lead 510 integrally formed with the corresponding first metal clamp 508 is pre-bent upward in the same direction as the die pad 504 and / or the corresponding lead 506 of the lead frame panel 502, but the bending degree is less. The lesser degree of pre-bending of the clamp frame panel 500 takes into account the height of the semiconductor die to be attached to the die pad 504 of the lead frame panel 502. Therefore, the leads 506 of the lead frame panel 502 and the leads 510 of the clamp frame panel 500 will terminate in the same planar column assembly. Such a configuration provides an SMD package with top-side cooling, in which heat is dissipated at the exposed die pad 504 without having to pass through a circuit board, such as a PCB, to which the SMD package is to be attached via the leads 506, 510. Each additional metal clamp 512 (if provided) of the clamp frame panel 500 and / or each lead 514 formed integrally with the corresponding additional metal clamp 512 is similarly pre-bent upward in the same direction as the tube core pad 504 and / or corresponding lead 506 of the lead frame panel 502, but also bent to a lesser extent, like the first metal clamp 508 and / or corresponding lead 506 of the lead frame panel 502.

[0073] Figure 5 The metal clamps 508, 512 of the jig frame panel 500 and the die pads 504 of the lead frame panel 502 are shown to be pre-bent. However, the corresponding leads 510, 514 of the jig frame panel 500 and the corresponding leads 506 of the lead frame panel 502 may alternatively be pre-bent. In yet another embodiment, the metal clamps 508, 512 and the corresponding leads 510, 514 of the jig frame panel 500 and the die pads 504 and the corresponding leads 506 of the lead frame panel 502 may be pre-bent such that the jig frame panel 500 and the lead frame panel 502 are pre-bent in at least two sections. In each case, the side of the die pad 504 facing away from the jig frame panel 500 may remain at least partially uncovered in the final SMD package to provide a metal surface for attaching a heat sink or other structure for dissipating heat from the top side of the SMD package.

[0074] Fig. 6A and Figure 6B An embodiment of a semiconductor package is shown after die attach and panel assembly, but before molding. Fig. 6A A top perspective view is shown, while Figure 6BA side view is shown. According to the present embodiment, the power semiconductor die 600 has a first power terminal 602, such as a drain or source terminal attached to the die pad 504 by a die attach material 604 such as a solder paste, sinter paste, glue, etc. The power semiconductor die 600 has a second power terminal 606, such as a drain or source terminal and a control terminal 610 such as a gate terminal on the opposite side of the die 600 from the first power terminal 602. The second power terminal 606 of the die 600 is attached to a first pre-bent metal fixture 508 cut from the fixture frame panel 500 by a die attach material 610 such as a solder paste, sinter paste, glue, etc. The control terminal 608 of the die 600 is similarly attached to an additional pre-bent metal fixture 512 cut from the fixture frame panel 500 by a die attach material 612 such as a solder paste, sinter paste, glue, etc.

[0075] By pre-bending the die pad 504 of the lead frame panel 502 and the metal clips 508, 512 of the jig frame panel 500 in the same direction, but pre-bending the metal clips 508, 512 of the jig frame panel 500 to a lesser degree (α1>α2) than the die pad 504 of the lead frame panel 502, the leads 506 taken from the lead frame panel 502 and the leads 510 taken from the jig frame panel 500 terminate in the same plane (P_leads) after assembly. Such a package configuration allows the package to be surface mounted to a circuit board at the surface 614 of the leads 506, 510 facing away from the semiconductor die 600, and allows top-side cooling at the surface 616 of the exposed die pad 504. Fig. 6A and Figure 6B The package shown in can be molded wherein at least a portion of the surface 616 of the die pad 504 is configured for top side cooling of the remaining portion not covered by the molding compound.

[0076] Fig. 7A shows a bottom perspective view of the package after molding, Figure 7B A top side perspective view of the package after molding is shown. The package is configured to be surface mounted to a circuit board at the bottom surface 614 of the leads 506, 510. The package is also configured for top side cooling at the top surface 616 of the die pad 504. At least a portion of the top surface 616 of the die pad 504 remains uncovered by the mold compound 700 to enable efficient top side cooling.

[0077] Figure 8A cross-sectional view of a package attached to a PCB 800 in an SMD configuration is shown. The PCB 800 may be a single or multi-layer board in which one or more copper board layers 802 are laminated to and / or between board layers 804 of a non-conductive substrate such as FR-4. The package is surface mounted to the PCB 800 at the bottom surface 614 of the package surfaces 506, 510. At least a portion of the top surface 616 of the die pad 504 remains uncovered by the mold compound 700 to provide a heat dissipation path at the opposite side of the molded semiconductor package configured for surface mounting.

[0078] For example, a heat sink 806 may be attached to the top side of the package so that the heat energy generated during device operation is mostly dissipated through the heat sink 806 as shown by the dashed arrows, rather than through the PCB 800. A thermal interface material 808, such as thermal grease, a polymer matrix with thermally conductive particles, etc., may be provided between the heat sink 806 and the exposed surface 616 of the die pad 504 on the top side of the package to enhance the thermal interface between the heat sink 806 and the die pad 504. The heat sink 806 is illustrated as Figure 8 Generally, any type of heat sink 806 (air cooling, liquid cooling, etc.) can be used.

[0079] Terms such as "first", "second", etc. are used to describe various elements, regions, parts, etc., and are not intended to be limiting. Similar terms refer to similar elements throughout the specification.

[0080] As used herein, the terms "having", "comprising", "including", "containing", etc. are open terms, indicating the presence of stated elements or features, but not excluding additional elements or features. The articles "a", "an", "the" are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

[0081] It is to be understood that the features of the various embodiments described herein may be combined with each other, unless specifically stated otherwise.

[0082] Although specific embodiments have been illustrated and described herein, it will be appreciated by those skilled in the art that a variety of alternative and / or equivalent embodiments may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any modifications or variations of the specific embodiments described herein. Therefore, it is intended that the present invention be limited only by the claims and their equivalents.

Claims

1. A method of manufacturing a molded semiconductor package, the method comprising: providing a lead frame, the lead frame comprising a die pad and one or more first leads integrally formed with the die pad and extending outwardly from the die pad in a first direction, the die pad and the one or more first leads being attached to an outer periphery of the lead frame; attaching a first side of a semiconductor die to the die pad; aligning a fixture frame with the lead frame so that a first pre-bent metal fixture of the fixture frame is vertically aligned with a power terminal of a second side of the semiconductor die opposite to the first side, the fixture frame further comprising one or more second leads, the one or more second leads being integrally formed with the first pre-bent metal fixture, extending outwardly from the first pre-bent metal fixture in a second direction different from the first direction and attached to a periphery of the fixture frame; attaching the first pre-bent metal fixture to the power terminal on the second side of the semiconductor die; embedding the semiconductor die in a molding compound such that the one or more first leads and the one or more second leads protrude from the molding compound in a substantially planar direction and do not vertically overlap each other; as well as The one or more first leads are separated from the periphery of the lead frame and the one or more second leads are separated from the periphery of the clip frame outside the molding compound.

2. The method according to claim 1, wherein: Outside the mold compound, separating the one or more first leads from the periphery of the lead frame and separating the one or more second leads from the periphery of the clamp frame comprises: The one or more first leads and the one or more second leads are punched out of the mold compound.

3. The method according to claim 1, wherein: Outside the mold compound, separating the one or more first leads from the periphery of the lead frame and separating the one or more second leads from the periphery of the clamp frame comprises: The one or more first leads and the one or more second leads are cut outside the mold compound.

4. The method according to claim 1, further comprising: attaching a second pre-bent metal fixture of the fixture frame to a control terminal of the second side of the semiconductor die, wherein the clamp frame further comprises a third lead extending outwardly from the second pre-bent metal clamp and attached to the outer periphery of the clamp frame, Wherein, after embedding the semiconductor die in the molding compound, the third leads protrude from the molding compound and do not vertically overlap the one or more first leads.

5. The method according to claim 4, further comprising: The third lead is separated from the periphery of the clamp frame outside the molding compound via the same stamping process used to separate the one or more first leads from the periphery of the lead frame and to separate the one or more second leads from the periphery of the clamp frame.

6. The method according to claim 1, wherein: The one or more first leads protrude from a first side of the molding compound after being separated from the periphery of the lead frame, and wherein the one or more second leads protrude from a second side of the molding compound different from the first side after being separated from the periphery of the clamp frame.

7. The method according to claim 6, further comprising: Portions of the one or more first leads protruding from the first side of the mold compound and portions of the one or more second leads protruding from the second side of the mold compound are electroplated to form wettable lead surfaces on different sides of the mold compound.

8. The method according to claim 1, wherein: The lead frame is not bent.

9. The method according to claim 1, wherein: The clamp frame includes alignment features to assist in aligning the clamp frame with the lead frame.

10. The method according to claim 1, wherein: The clip frame is stacked on top of the lead frame in the area of ​​mold runners used during embedding of the semiconductor die in the molding compound.

11. The method according to claim 1, further comprising: The clamp frame is pressed against the lead frame to provide a tight seal during embedding of the semiconductor die in the molding compound.

12. A molded semiconductor package comprising: a lead frame comprising a die pad and one or more first leads, the one or more first leads being integrally formed with the die pad and extending outwardly from the die pad in a first direction; a semiconductor die attached to the die pad on a first side of the semiconductor die; a clamp frame comprising a first metal clamp attached to a power terminal on a second side of the semiconductor die opposite the first side, and one or more second leads, the one or more second leads being integrally formed with the first metal clamp and extending outwardly from the first metal clamp in a second direction different from the first direction; as well as a molding compound, the molding compound embedding the semiconductor die, wherein the one or more first leads and the one or more second leads are exposed to different sides of the molding compound and do not vertically overlap each other, Wherein, within the mold compound, the first metal clip transitions from a first level above the power terminals of the second side of the semiconductor die to a second level in the same plane as the one or more first leads and the one or more second leads.

13. The molded semiconductor package according to claim 12, wherein The clamp frame also includes a second metal clamp and a third lead, wherein the second metal clamp is attached to the control terminal of the second side of the semiconductor tube core, and the third lead extends outward from the second metal clamp, and wherein the third lead is exposed to one side of the molding compound and does not vertically overlap with the one or more first leads.

14. The molded semiconductor package according to claim 12, wherein: The one or more first leads protrude from a first side of the mold compound, and wherein the one or more second leads protrude from a second side of the mold compound different from the first side.

15. The molded semiconductor package according to claim 14, wherein Portions of the one or more first leads protruding from the first side of the mold compound and portions of the one or more second leads protruding from the second side of the mold compound are at least partially plated to form wettable lead surfaces on different sides of the mold compound.

16. The molded semiconductor package according to claim 12, wherein The first metal clip is bent in at least two different places within the mold compound.

17. The molded semiconductor package according to claim 12, wherein: The semiconductor die is a power transistor die, wherein the power terminal on the first side of the power transistor die is a drain or collector terminal, wherein the power terminal on the second side of the power transistor die is a source or emitter terminal, and wherein the power transistor die is attached to the die pad in a drain-down or collector-down configuration.

18. The molded semiconductor package according to claim 12, wherein: The semiconductor die is a power transistor die, wherein the power terminal on the first side of the power transistor die is a source or emitter terminal, wherein the power terminal on the second side of the power transistor die is a drain terminal, and wherein the power transistor die is attached to the die pad in a source-down or emitter-down configuration.

19. The molded semiconductor package according to claim 18, wherein The lead frame includes additional leads attached to control terminals at the first side of the power transistor die, and wherein the additional leads are exposed to the same side of the mold compound as the one or more first leads.

20. The molded semiconductor package according to claim 12, wherein The die pad and the first metal clamp are bent in the same direction, and wherein the first metal clamp is bent to a lesser extent than the die pad, so that the one or more first leads integrally formed with the die pad and the one or more second leads integrally formed with the first metal clamp terminate in the same plane and are configured to be surface mounted on the first side of the molded semiconductor package.

21. The molded semiconductor package according to claim 12, wherein The die pad is at least partially uncovered by the molding compound at a second side of the molded semiconductor package opposite the first side of the molded semiconductor package to provide a heat dissipation path at an opposite side of the molded semiconductor package configured for surface mounting.

22. A method of manufacturing a molded semiconductor package, the method comprising: Providing a lead frame panel, the lead frame panel comprising a plurality of unit lead frames connected to each other, each unit lead frame comprising a die pad and one or more first leads, the one or more first leads being integrally formed with the die pad and extending outwardly from the die pad in a first direction, the die pad and the one or more first leads being attached to the periphery of the unit lead frame; attaching a separate semiconductor die to each of said die pads on a first side, each semiconductor die including a power supply terminal on a second side opposite to said first side; Aligning a jig frame panel with the lead frame panel, the jig frame panel comprising a plurality of unit jig frames connected to each other, each unit jig frame comprising a first pre-bent metal jig and one or more second leads, the first pre-bent metal jig being vertically aligned with a corresponding power terminal on the second side of one of the semiconductor dies, the one or more second leads being integrally formed with the first pre-bent metal jig, extending outwardly from the first pre-bent metal jig in a second direction different from the first direction and attached to an outer periphery of the unit jig frame; attaching each first pre-bent metal fixture to the power terminal of the second side of the corresponding semiconductor die; embedding the semiconductor die in a molding compound such that each of the one or more first leads and each of the one or more second leads protrude from the molding compound in a substantially planar direction and do not vertically overlap one another; as well as Each of the one or more first leads is separated from the outer circumference of a corresponding unit lead frame and each of the one or more second leads is separated from the outer circumference of a corresponding unit clamp frame outside the mold compound.

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