Heterojunction solar cell, shingled module and manufacturing method

Abstract

The present invention provides a heterojunction solar cell, a shingled module, and a method for manufacturing a heterojunction solar cell. The heterojunction solar cell includes a substrate layer, an intrinsic amorphous silicon thin film layer, a doped layer, a transparent conductive layer, and an electrode. The intrinsic amorphous silicon thin film layers located on the top side and the bottom side of the substrate layer both include a four-layer structure, and these four-layer structures are different from each other. According to the present invention, the intrinsic amorphous silicon thin film layer structures on the top side and the bottom side of the substrate layer both include a four-layer structure, and the compositions of these four-layer structures are all different from each other. When combined together, they can give full play to the advantages of the intrinsic amorphous silicon thin film layer to a great extent and can improve the overall electrical performance or efficiency of the solar cell.

Description

Technical Field

[0001] The present invention relates to the field of energy, and particularly to a heterojunction solar cell wafer, a shingled module, and a manufacturing method of a heterojunction solar cell wafer. Background Art

[0002] With the accelerating consumption rate of conventional fossil energies such as coal, oil, and natural gas globally, the ecological environment has been deteriorating continuously. In particular, greenhouse gas emissions have led to increasingly severe global climate change, and the sustainable development of human society has been seriously threatened. Countries around the world have successively formulated their respective energy development strategies to address the limitations of conventional fossil energy resources and the environmental problems brought about by their exploitation and utilization. Solar energy has become one of the most important renewable energies due to its characteristics of reliability, safety, extensiveness, long lifespan, environmental friendliness, and abundant resources, and is expected to become the main pillar of future global power supply.

[0003] In the process of a new round of energy transformation, China's photovoltaic industry has grown into a strategic emerging industry with international competitive advantages. However, the development of the photovoltaic industry still faces many problems and challenges. Conversion efficiency and reliability are the biggest technical obstacles restricting the development of the photovoltaic industry, while cost control and scale-up pose economic constraints.

[0004] Currently, heterojunction solar cells are regarded as the next-generation ultra-high-efficiency solar cell technology with the most potential for industrialization due to a series of advantages such as high conversion efficiency, short manufacturing process flow, wafer thinning, low temperature coefficient, no light-induced degradation, and high bifaciality for bifacial power generation.

[0005] The top side and the bottom side of the existing heterojunction solar cell wafers both include multi-layer structures, and these layers are relatively independent of each other and not mutually matched, that is, simply combining these layers together will not fully exert their respective advantages. Moreover, for any single layer, the performance in different aspects usually restricts each other. For example, a single layer cannot achieve both excellent electrical conductivity and light transmittance; and if the function of a single layer is maximized, it may affect the overall electrical performance or efficiency of the solar cell wafer, that is, the function of a single film layer and the overall efficiency of the solar cell wafer cannot be balanced.

[0006] Therefore, it is necessary to provide a heterojunction solar cell wafer, a shingled module, and a manufacturing method of a heterojunction solar cell wafer to at least partially solve the above problems. Summary of the Invention

[0007] The object of the present invention is to provide a heterojunction solar cell, a shingled module and a manufacturing method of the heterojunction solar cell. In the heterojunction solar cell of the present invention, the intrinsic amorphous silicon thin film layer structures on the top side and the bottom side of the substrate layer both include a four-layer structure, and the compositions of these four layers are all different from each other. When combined together, they can give full play to the advantages of the intrinsic amorphous silicon thin film layer to a great extent and can improve the overall electrical performance or efficiency of the solar cell.

[0008] Specifically, among these four layers, the composition of the first intrinsic amorphous silicon thin film layer is such that the amorphous silicon thin film layer will not become long-range ordered and will not grow into epitaxial silicon, and the light absorption performance of the first intrinsic amorphous silicon thin film layer is poor, thus improving the short-circuit current of the cell; the second intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar cell; the third intrinsic amorphous silicon thin film layer can provide hydrogen passivation while having a small thickness, reduce the contact resistance of the film layer, improve the fill factor, reduce the light absorption of the film layer, and increase the short-circuit current; the fourth intrinsic amorphous silicon thin film layer can be relatively dense, thus effectively preventing the diffusion of doped atoms. In addition, this layer structure can also have a high transmittance, thereby increasing the short-circuit current.

[0009] Moreover, in the present invention, the doped layers on the top side and the bottom side of the intrinsic amorphous silicon thin film layer can both have a two-layer structure, namely an amorphous silicon layer with a lower doping concentration and a microcrystalline silicon layer with a higher doping concentration. In this way, relatively few impurity atoms diffuse outward from the amorphous silicon layer, and the microcrystalline silicon layer can form a good contact with the transparent conductive layer to reduce the contact resistance and improve the fill factor. In addition, the microcrystalline silicon layer has a high transmittance, which can reduce the light absorption of the film layer, thereby increasing the short-circuit current.

[0010] According to a first aspect of the present invention, there is provided a heterojunction solar cell, which includes a substrate sheet and electrodes provided on the top surface and the bottom surface of the substrate sheet. The substrate sheet includes:

[0011] a monocrystalline silicon substrate layer;

[0012] two groups of intrinsic amorphous silicon thin film layers, the two groups of intrinsic amorphous silicon thin film layers include a first group of intrinsic amorphous silicon thin film layers provided on the top side of the monocrystalline silicon substrate layer and a second group of intrinsic amorphous silicon thin film layers provided on the bottom side of the monocrystalline silicon substrate layer. The first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers both include the following four layers arranged in sequence from the direction of the monocrystalline silicon substrate layer pointing to the electrode:

[0013] a first intrinsic amorphous silicon thin film layer, and the first intrinsic amorphous silicon thin film layer is an overall layered structure of carbon

[0014] group-doped silicon;

[0015] The second layer of intrinsic amorphous silicon thin film layer, and the second layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a silicon

[0016] source atmosphere;

[0017] The third layer of intrinsic amorphous silicon thin film layer, and the third layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere

[0018] ;

[0019] The fourth layer of intrinsic amorphous silicon thin film layer, and the fourth layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere

[0020] ;

[0021] The N-type doping layer is located on the top side of the first group of intrinsic amorphous silicon thin film layers;

[0022] The P-type doping layer is located on the bottom side of the second group of intrinsic amorphous silicon thin film layers;

[0023] The transparent conductive layer is respectively disposed on the top side of the N-type doping layer and the bottom side of the P-type doping layer, and the electrode is disposed on the surface of the transparent conductive layer.

[0024] In one embodiment, the first layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of silane doped with at least one of alkane, alkene, and alkyne.

[0025] In one embodiment, the third layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas in which the ratio of the amount of hydrogen gas to the amount of silane gas is in the range of 3 - 15.

[0026] In one embodiment, the fourth layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas in which the ratio of the amount of alkane to the amount of hydrogen gas is in the range of 1 / 20 - 3 / 5.

[0027] In one embodiment, both the N-type doping layer and the P-type doping layer each include a first doping layer in contact with the fourth layer of intrinsic amorphous silicon thin film layer and a second doping layer in contact with the transparent conductive layer. The first doping layer is an integral layered structure of amorphous silicon, and the second doping layer is an integral layered structure of microcrystalline silicon. The doping concentration of the second doping layer is greater than the doping concentration of the first doping layer.

[0028]

[0029]

[0030]

[0030] In one embodiment, the first doped layer of the N-type doped layer is a monolithic layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and phosphine;

[0031] The second doped layer of the N-type doped layer is a monolithic layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, phosphine, and carbon dioxide.

[0032] In one embodiment, the first doped layer of the P-type doped layer is a monolithic layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and trimethylboron;

[0033] The second doped layer of the P-type doped layer is a monolithic layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, borane, and carbon dioxide.

[0034] In one embodiment, the doping amount of phosphorus in the first doped layer of the N-type doped layer is 14 ppm - 17 ppm.

[0035] In one embodiment, the crystallinity of the second doped layer of the N-type doped layer is 40% - 65%, and the doping amount of phosphorus in the second doped layer of the N-type doped layer is 18 ppm - 22 ppm.

[0036] In one embodiment, the doping amount of boron in the first doped layer of the P-type doped layer is 14 ppm - 17 ppm.

[0037] In one embodiment, the crystallinity of the second doped layer of the P-type doped layer is 40% - 65%, and the doping amount of boron in the second doped layer of the P-type doped layer is 18 ppm - 22 ppm.

[0038] In one embodiment, the substrate layer is an N-type single-crystalline silicon substrate layer.

[0039] According to the second aspect of the present invention, there is provided a shingled module, characterized in that the shingled module is formed by connecting heterojunction solar cells in a shingled manner according to any one of the above solutions.

[0040] According to the third aspect of the present invention, there is provided a heterojunction solar cell, the heterojunction solar cell comprising a substrate sheet and electrodes provided on the top surface and the bottom surface of the substrate sheet, the substrate sheet comprising:

[0041] Two groups of intrinsic amorphous silicon thin film layers, the two groups of intrinsic amorphous silicon thin film layers comprising a first group of intrinsic amorphous silicon thin film layers provided on the top side of the single-crystalline silicon substrate layer and a second group of intrinsic amorphous silicon thin film layers provided on the bottom side of the single-crystalline silicon substrate layer, and both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each comprise a four-layer structure;

[0042] An N-type doped layer, the N-type doped layer being located on the top side of the first group of intrinsic amorphous silicon thin film layers;

[0043] A P-type doped layer, the P-type doped layer being located on the bottom side of the second group of intrinsic amorphous silicon thin film layers;

[0044] A transparent conductive layer, the transparent conductive layer being disposed on the top side of the N-type doped layer and the bottom side of the P-type doped layer respectively, and the electrodes being disposed on the surface of the transparent conductive layer,

[0045] Moreover, both the N-type doped layer and the P-type doped layer each include a first doped layer in contact with the intrinsic amorphous silicon thin film layer and a second doped layer in contact with the transparent conductive layer. The first doped layer is an integral layer structure of amorphous silicon, and the second doped layer is an integral layer structure of microcrystalline silicon. The doping concentration of the second doped layer is greater than that of the first doped layer.

[0046] In one embodiment, the first doped layer of the N-type doped layer is an integral layer structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and phosphine;

[0047] The second doped layer of the N-type doped layer is an integral layer structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, phosphine, and carbon dioxide.

[0048] In one embodiment, the first doped layer of the P-type doped layer is an integral layer structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and trimethylboron;

[0049] The second doped layer of the P-type doped layer is an integral layer structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, borane, and carbon dioxide.

[0050] In one embodiment, the doping amount of phosphorus in the first doped layer of the N-type doped layer is 14 ppm - 17 ppm.

[0051] In one embodiment, the crystallinity of the second doped layer of the N-type doped layer is 40% - 65%, and the doping amount of phosphorus in the second doped layer of the N-type doped layer is 18 ppm - 22 ppm.

[0052] In one embodiment, the doping amount of boron in the first doped layer of the P-type doped layer is 14 ppm - 17 ppm.

[0053] In one embodiment, the crystallinity of the second doped layer of the P-type doped layer is 40% - 65%, and the doping amount of boron in the second doped layer of the P-type doped layer is 18 ppm - 22 ppm.

[0054] According to the fourth aspect of the present invention, a shingled module is provided, which is formed by connecting heterojunction solar cells in a shingled manner according to any one of the above solutions.

[0055] According to the fifth aspect of the present invention, a method for manufacturing a heterojunction solar cell is provided. The method includes the steps of manufacturing a whole heterojunction solar cell and scribing the whole heterojunction solar cell into pieces. Among them, the step of manufacturing the whole heterojunction solar cell further includes the following steps:

[0056] Providing a monocrystalline silicon substrate layer;

[0057] Providing a first group of intrinsic amorphous silicon thin film layers on the top side of the monocrystalline silicon substrate layer, and providing a second group of intrinsic amorphous silicon thin film layers on the bottom side of the monocrystalline silicon substrate layer;

[0058] Providing an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, and providing a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers;

[0059] Providing a transparent conductive layer on the top side of the N-type doped layer and on the bottom side of the P-type doped layer;

[0060] Applying electrodes on the exposed surfaces of the transparent conductive layer,

[0061] Among them, the steps of providing the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include the following steps:

[0062] Depositing a first layer of intrinsic amorphous silicon thin film layer on the top surface or the bottom surface of the monocrystalline silicon substrate layer with a mixed gas of silicon doped with a carbon group element;

[0063] Depositing a second layer of intrinsic amorphous silicon thin film layer on the exposed surface of the first layer of intrinsic amorphous silicon thin film layer with a silicon source atmosphere;

[0064] Depositing a third layer of intrinsic amorphous silicon thin film layer on the exposed surface of the second layer of intrinsic amorphous silicon thin film layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere;

[0065] Depositing a fourth layer of intrinsic amorphous silicon thin film layer on the exposed surface of the third layer of intrinsic amorphous silicon thin film layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere.

[0066] In one embodiment, the step of providing the first layer of intrinsic amorphous silicon thin film layer includes: depositing a first layer of intrinsic amorphous silicon thin film layer with a mixed gas of silane doped with at least one of an alkane, an alkene, and an alkyne.

[0067] In one embodiment, the step of setting the third layer of intrinsic amorphous silicon thin film layer includes: forming the third layer of intrinsic amorphous silicon thin film layer by depositing with a mixed gas in which the ratio of the amounts of hydrogen gas and silane gas is in the range of 3-15.

[0068] In one embodiment, the step of setting the fourth layer of intrinsic amorphous silicon thin film layer includes: forming the fourth layer of intrinsic amorphous silicon thin film layer by depositing with a mixed gas in which the ratio of the amounts of alkane and hydrogen is in the range of 1 / 20 - 3 / 5.

[0069] In one embodiment, the steps of setting the N-type doped layer and the steps of setting the P-type doped layer both include the following steps:

[0070] On the fourth layer of intrinsic amorphous silicon thin film layer, a first doped layer made of amorphous silicon is formed using a mixed gas having a first doping concentration;

[0071] On the first doped layer, a second doped layer made of microcrystalline silicon is formed using a mixed gas having a second doping concentration greater than the first doping concentration.

[0072] In one embodiment, the steps of setting the N-type doped layer include the following steps:

[0073] Forming the first doped layer by depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and phosphine;

[0074] Forming the second doped layer by depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, phosphine, and carbon dioxide.

[0075] In one embodiment, the steps of setting the P-type doped layer include the following steps:

[0076] Forming the first doped layer by depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and trimethylboron;

[0077] Forming the second doped layer by depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, borane, and carbon dioxide.

[0078] In one embodiment, the step of manufacturing the first doped layer of the N-type doped layer includes: controlling the proportions of the components in the mixed gas so that the doping amount of phosphorus in the first doped layer of the formed N-type doped layer is 14 ppm - 17 ppm.

[0079] In one embodiment, the step of manufacturing the second doped layer of the N-type doped layer includes: controlling the proportions of the components in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40% - 65% and the doping amount of phosphorus is 18 ppm - 22 ppm.

[0080] In one embodiment, the step of manufacturing the first doped layer of the P-type doped layer includes: controlling the ratio of each component in the mixed gas so that the doping amount of boron in the first doped layer of the formed P-type doped layer is 14 ppm - 17 ppm.

[0081] In one embodiment, the step of manufacturing the second doped layer of the P-type doped layer includes: controlling the ratio of each component in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40% - 65% and the doping amount of boron is 18 ppm - 22 ppm.

[0082] In one embodiment, the single-crystalline silicon substrate layer is set as an N-type single-crystalline silicon substrate layer.

[0083] According to the sixth aspect of the present invention, a method for manufacturing a heterojunction solar cell is provided. The method includes the steps of manufacturing the whole heterojunction solar cell and splitting the whole heterojunction solar cell into chips. Among them, the step of manufacturing the whole heterojunction solar cell further includes the following steps:

[0084] Set a single-crystalline silicon substrate layer;

[0085] Set a first group of intrinsic amorphous silicon thin film layers on the top side of the single-crystalline silicon substrate layer, and set a second group of intrinsic amorphous silicon thin film layers on the bottom side of the single-crystalline silicon substrate layer. Both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include a four-layer structure;

[0086] Set an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, and set a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers;

[0087] Set a transparent conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer;

[0088] Apply an electrode on the exposed surface of the transparent conductive layer,

[0089] Among them, the steps of setting the N-type doped layer and setting the P-type doped layer both include the following steps:

[0090] Generate a first doped layer made of amorphous silicon on the fourth layer of intrinsic amorphous silicon thin film layer using a mixed gas with a first doping concentration;

[0091] Generate a second doped layer made of microcrystalline silicon on the first doped layer using a mixed gas with a second doping concentration greater than the first doping concentration.

[0092] In one embodiment, the step of setting the N-type doped layer includes the following steps:

[0093] The first doped layer is formed by depositing a mixed gas composed of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and phosphine.

[0094] The second doped layer is formed by depositing a mixed gas composed of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, phosphine, and carbon dioxide.

[0095] In one embodiment, the step of setting the P-type doped layer includes the following steps:

[0096] The first doped layer is formed by depositing a mixed gas composed of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and trimethylboron.

[0097] The second doped layer is formed by depositing a mixed gas composed of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, borane, and carbon dioxide.

[0098] In one embodiment, the step of manufacturing the first doped layer of the N-type doped layer includes: controlling the proportion of each component in the mixed gas so that the doping amount of phosphorus in the first doped layer of the formed N-type doped layer is 14 ppm - 17 ppm.

[0099] In one embodiment, the step of manufacturing the second doped layer of the N-type doped layer includes: controlling the proportion of each component in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40% - 65% and the doping amount of phosphorus is 18 ppm - 22 ppm.

[0100] In one embodiment, the step of manufacturing the first doped layer of the P-type doped layer includes: controlling the proportion of each component in the mixed gas so that the doping amount of boron in the first doped layer of the formed P-type doped layer is 14 ppm - 17 ppm.

[0101] In one embodiment, the step of manufacturing the second doped layer of the P-type doped layer includes: controlling the proportion of each component in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40% - 65% and the doping amount of boron is 18 ppm - 22 ppm.

[0102] According to the present invention, in the heterojunction solar cell, the intrinsic amorphous silicon thin film layer structures on the top side and the bottom side of the substrate layer both include a four-layer structure, and the components of these four layers are all different from each other. When combined together, they can greatly exert the advantages of the intrinsic amorphous silicon thin film layer and can improve the overall electrical performance or efficiency of the solar cell.

[0103] Specifically, in these four-layer structures, the composition of the first-layer intrinsic amorphous silicon thin film layer enables the amorphous silicon thin film layer not to become long-range ordered and not to grow into epitaxial silicon, and the light absorption performance of the first-layer intrinsic amorphous silicon thin film layer is poor, thereby improving the short-circuit current of the cell; the second-layer intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar cell; the third-layer intrinsic amorphous silicon thin film layer can provide hydrogen passivation while having a small thickness, reduce the contact resistance of the film layer, improve the fill factor, reduce the light absorption of the film layer, and increase the short-circuit current; the fourth-layer intrinsic amorphous silicon thin film layer can be relatively dense, thus effectively preventing the diffusion of doped atoms. In addition, this layer structure can also have a high transmittance, thereby increasing the short-circuit current.

[0104] Moreover, in the present invention, the doping layers on the top and bottom sides of the intrinsic amorphous silicon thin film layer can both have a two-layer structure, namely, an amorphous silicon layer with a lower doping concentration and a microcrystalline silicon layer with a higher doping concentration. This makes the impurity atoms diffusing outward from the amorphous silicon layer relatively few, and the microcrystalline silicon layer can form a good contact with the transparent conductive layer to reduce the contact resistance and improve the fill factor. In addition, the microcrystalline silicon layer has a high transmittance, which can reduce the light absorption of the film layer, thereby increasing the short-circuit current. BRIEF DESCRIPTION OF THE DRAWINGS

[0105] To better understand the above and other objects, features, advantages and functions of the present invention, reference may be made to the preferred embodiments shown in the drawings. The same reference numerals in the drawings refer to the same components. Those skilled in the art should understand that the drawings are intended to schematically illustrate the preferred embodiments of the present invention and have no limiting effect on the scope of the present invention. The components in the drawings are not drawn to scale.

[0106] Figure 1 FIG. is a schematic diagram of a heterojunction solar cell according to a preferred embodiment of the present invention;

[0107] Figure 2 FIG. is a schematic diagram of a heterojunction solar cell according to another preferred embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0108] Now referring to the drawings, the specific embodiments of the present invention will be described in detail. What is described here is only the preferred embodiments of the present invention. Those skilled in the art can think of other ways to implement the present invention based on the preferred embodiments, and these other ways also fall within the scope of the present invention.

[0109] The present invention provides a heterojunction solar cell, a shingled module, and a method for manufacturing a heterojunction solar cell. Figure 1 and Figure 2 show schematic diagrams of heterojunction solar cells according to two preferred embodiments of the present invention.

[0110] The first embodiment

[0111] Reference Figure 1 , in the first embodiment, the heterojunction solar cell wafer includes a substrate wafer, a positive electrode is printed on the top surface of the substrate wafer, and a back electrode is printed on the bottom surface. The positive electrode and the back electrode are preferably made of silver. The substrate wafer further includes a plurality of cell layers stacked on top of each other in a direction perpendicular to the substrate wafer. The plurality of cell layers include a single-crystalline silicon substrate layer, a first group of intrinsic amorphous silicon thin film layers, a second group of intrinsic amorphous silicon thin film layers, a doping layer, and a transparent conductive layer. The single-crystalline silicon substrate layer can be, for example, an N-type single-crystalline silicon substrate layer.

[0112] The first group of intrinsic amorphous silicon thin film layers is disposed on the top side of the single-crystalline silicon substrate layer, and the second group of intrinsic amorphous silicon thin film layers is disposed on the bottom side of the single-crystalline silicon substrate layer. Both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include a first layer of intrinsic amorphous silicon thin film layer, a second layer of intrinsic amorphous silicon thin film layer, a third layer of intrinsic amorphous silicon thin film layer, and a fourth layer of intrinsic amorphous silicon thin film layer arranged in sequence from the direction of the single-crystalline silicon substrate layer pointing to the electrode.

[0113] Among them, the first layer of intrinsic amorphous silicon thin film layer is an integral layered structure of silicon doped with a carbon group element; the second layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a silicon source atmosphere; the third layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere; the fourth layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere.

[0114] Preferably, the first layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of silane doped with at least one of an alkane, an alkene, and an alkyne; the third layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas in which the ratio of the amount of hydrogen gas to the amount of silane gas is in the range of 3 - 15; the fourth layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas in which the ratio of the amount of alkane to the amount of hydrogen gas is in the range of 1 / 20 - 3 / 5.

[0115] The structures of these four layers of intrinsic amorphous silicon thin film layers have different compositions from each other, and when combined together, they can largely exert the advantages of the intrinsic amorphous silicon thin film layers and can improve the overall electrical performance or efficiency of the solar cell wafer.

[0116] Specifically, the composition of the first layer of intrinsic amorphous silicon thin film layer enables the amorphous silicon thin film layer not to become long-range ordered and not to grow into epitaxial silicon, and the light absorption performance of the first layer of intrinsic amorphous silicon thin film layer is poor, thereby improving the short-circuit current of the cell; the second layer of intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar cell; the third layer of intrinsic amorphous silicon thin film layer can provide hydrogen passivation while having a small thickness, reduce the contact resistance of the film layer, improve the fill factor, reduce the light absorption of the film layer, and increase the short-circuit current; the fourth layer of intrinsic amorphous silicon thin film layer can be relatively dense, effectively preventing the diffusion of doped atoms. In addition, this layer structure can also have a high transmittance, thereby increasing the short-circuit current.

[0117] Continue to refer to Figure 1 , the doping layer on the top side of the first group of intrinsic amorphous silicon thin film layers is an N-type doping layer doped with phosphorus, and the doping layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers is a P-type doping layer doped with boron. The N-type doping layer and the P-type doping layer can be a single-layer structure or a structure of at least two layers.

[0118] This embodiment also provides a shingled module, which is formed by arranging multiple Figure 1 heterojunction solar cells in a shingled manner.

[0119] This embodiment also provides a method for manufacturing the heterojunction solar cell as Figure 1 shown. The method includes the steps of manufacturing the whole heterojunction solar cell and scribing the whole heterojunction solar cell. Among them, the step of manufacturing the whole heterojunction solar cell further includes the following steps: setting a single-crystalline silicon substrate layer; setting a first group of intrinsic amorphous silicon thin film layers on the top side of the single-crystalline silicon substrate layer, and setting a second group of intrinsic amorphous silicon thin film layers on the bottom side of the single-crystalline silicon substrate layer; setting an N-type doping layer on the top side of the first group of intrinsic amorphous silicon thin film layers, and setting a P-type doping layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers; setting a transparent conductive layer on the top side of the N-type doping layer and the bottom side of the P-type doping layer; applying electrodes on the exposed surfaces of the transparent conductive layer.

[0120] Among them, the steps of setting the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include the following steps: depositing a first layer of intrinsic amorphous silicon thin film layer on the top surface or the bottom surface of the single crystal silicon substrate layer with a mixed gas of silicon doped with a carbon group element; depositing a second layer of intrinsic amorphous silicon thin film layer on the exposed surface of the first layer of intrinsic amorphous silicon thin film layer with a silicon source atmosphere; depositing a third layer of intrinsic amorphous silicon thin film layer on the exposed surface of the second layer of intrinsic amorphous silicon thin film layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere; depositing a fourth layer of intrinsic amorphous silicon thin film layer on the exposed surface of the third layer of intrinsic amorphous silicon thin film layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere.

[0121] Preferably, the step of setting the first layer of intrinsic amorphous silicon thin film layer includes: depositing a first layer of intrinsic amorphous silicon thin film layer with a mixed gas of silane doped with at least one of alkane, alkene, and alkyne. The step of setting the third layer of intrinsic amorphous silicon thin film layer includes: depositing a third layer of intrinsic amorphous silicon thin film layer with a mixed gas in which the ratio of the amounts of hydrogen gas and silane gas is in the range of 3-15. The step of setting the fourth layer of intrinsic amorphous silicon thin film layer includes: depositing a fourth layer of intrinsic amorphous silicon thin film layer with a mixed gas in which the ratio of the amounts of alkane and hydrogen is in the range of 1 / 20-3 / 5.

[0122] In addition, the steps of setting the N-type doping layer and the steps of setting the P-type doping layer each include the following steps: generating a first doping layer made of amorphous silicon on the fourth layer of intrinsic amorphous silicon thin film layer with a mixed gas having a first doping concentration; generating a second doping layer made of microcrystalline silicon on the first doping layer with a mixed gas having a second doping concentration greater than the first doping concentration.

[0123] Preferably, the step of setting the N-type doping layer includes the following steps: depositing a first doping layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a mixture of silane and phosphine; depositing a second doping layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a mixture of silane, phosphine, and carbon dioxide.

[0124] More preferably, the step of manufacturing the first doping layer of the N-type doping layer includes: controlling the ratio of each component in the mixed gas so that the doping amount of phosphorus in the first doping layer of the N-type doping layer formed is 14 ppm-17 ppm. The step of manufacturing the second doping layer of the N-type doping layer includes: controlling the ratio of each component in the mixed gas so that the crystallinity of the second doping layer of the N-type doping layer formed is 40%-65% and the doping amount of phosphorus is 18 ppm-22 ppm.

[0125] Similarly preferably, the step of setting the P-type doping layer includes the following steps: forming a first-layer doping layer by depositing a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and trimethylboron; forming a second-layer doping layer by depositing a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, borane, and carbon dioxide.

[0126] More preferably, the step of manufacturing the first-layer doping layer of the P-type doping layer includes: controlling the proportion of each component in the mixed gas so that the doping amount of boron in the first-layer doping layer of the formed P-type doping layer is 14 ppm - 17 ppm. The step of manufacturing the second-layer doping layer of the P-type doping layer includes: controlling the proportion of each component in the mixed gas so that the crystallinity of the second doping layer of the formed P-type doping layer is 40% - 65% and the doping amount of boron is 18 ppm - 22 ppm.

[0127] Second Embodiment

[0128] Figure 2 Figure 10 shows a heterojunction solar cell sheet according to the second preferred embodiment of the present invention. The heterojunction solar cell sheet in this embodiment includes a substrate sheet, a positive electrode is printed on the top surface of the substrate sheet, and a back electrode is printed on the bottom surface. The positive electrode and the back electrode are preferably made of silver. The substrate sheet further includes a plurality of cell layers stacked on top of each other in a direction perpendicular to the substrate sheet. The plurality of cell layers include a single-crystalline silicon substrate layer, a first group of intrinsic amorphous silicon thin film layers, a second group of intrinsic amorphous silicon thin film layers, a doping layer, and a transparent conductive layer.

[0129] Among them, both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include a four-layer structure, and these four-layer structures can be as described in the previous embodiment or other structures different from the previous embodiment.

[0130] In Figure 2 the shown embodiment, both the N-type doping layer and the P-type doping layer include a two-layer structure - a first doping layer in contact with the fourth-layer intrinsic amorphous silicon thin film layer and a second doping layer in contact with the transparent conductive layer. The first doping layer is an amorphous silicon layer with a lower doping concentration, and the second doping layer is a microcrystalline silicon layer with a higher doping concentration.

[0131] Specifically, the first doping layer of the N-type doping layer is an integral layer structure formed by depositing a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and phosphine; the second doping layer of the N-type doping layer is an integral layer structure formed by depositing a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, phosphine, and carbon dioxide.

[0132] Preferably, the doping amount of phosphorus in the first doping layer of the N-type doping layer is 14 ppm - 17 ppm, the crystallinity of the second doping layer of the N-type doping layer is 40% - 65%, and the doping amount of phosphorus in the second doping layer of the N-type doping layer is 18 ppm - 22 ppm.

[0133] The first doping layer of the P-type doping layer is an integral layer structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and trimethylboron; the second doping layer of the P-type doping layer is an integral layer structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, borane, and carbon dioxide.

[0134] Preferably, the doping amount of boron in the first doping layer of the P-type doping layer is 14 ppm - 17 ppm, the crystallinity of the second doping layer of the P-type doping layer is 40% - 65%, and the doping amount of boron in the second doping layer of the P-type doping layer is 18 ppm - 22 ppm.

[0135] Both the top and bottom doping layers of the intrinsic amorphous silicon thin film layer are set to have a two-layer structure - an amorphous silicon layer with a lower doping concentration and a microcrystalline silicon layer with a higher doping concentration. This makes the impurity atoms diffusing out from the amorphous silicon layer relatively less, and the microcrystalline silicon layer can form a good contact with the transparent conductive layer to reduce the contact resistance and improve the fill factor. Moreover, the higher transmittance of the microcrystalline silicon layer can reduce the light absorption of the film layer, thereby increasing the short-circuit current.

[0136] This embodiment also provides an overlapping shingle module, which can be composed of Figure 2 the heterojunction solar cells shown in

[0137] This embodiment also provides a method for manufacturing the heterojunction solar cell as shown in Figure 2 The method includes the steps of manufacturing the whole heterojunction solar cell and splitting the whole heterojunction solar cell into pieces. Among them, the step of manufacturing the whole heterojunction solar cell further includes the following steps: setting a monocrystalline silicon substrate layer; setting a first group of intrinsic amorphous silicon thin film layers on the top side of the monocrystalline silicon substrate layer, and setting a second group of intrinsic amorphous silicon thin film layers on the bottom side of the monocrystalline silicon substrate layer. Both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include a four-layer structure; setting an N-type doping layer on the top side of the first group of intrinsic amorphous silicon thin film layers, and setting a P-type doping layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers; setting a transparent conductive layer on the top side of the N-type doping layer and the bottom side of the P-type doping layer; applying electrodes on the exposed surfaces of the transparent conductive layer.

[0138] Among them, the steps of setting the N-type doping layer and the steps of setting the P-type doping layer both include the following steps: generating a first doped layer made of amorphous silicon on the fourth layer of intrinsic amorphous silicon thin film layer by using a mixed gas with a first doping concentration; generating a second doped layer made of microcrystalline silicon on the first doped layer by using a mixed gas with a second doping concentration greater than the first doping concentration.

[0139] Preferably, the steps of setting the N-type doping layer include the following steps: depositing to form the first doped layer by using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and phosphine; depositing to form the second doped layer by using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, phosphine, and carbon dioxide.

[0140] More preferably, the step of manufacturing the first doped layer of the N-type doping layer includes: controlling the ratio of each component in the mixed gas so that the doping amount of phosphorus in the first doped layer of the formed N-type doping layer is 14 ppm - 17 ppm. The step of manufacturing the second doped layer of the N-type doping layer includes: controlling the ratio of each component in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doping layer is 40% - 65% and the doping amount of phosphorus is 18 ppm - 22 ppm.

[0141] Equally preferably, the steps of setting the P-type doping layer include the following steps: depositing to form the first doped layer by using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and trimethylboron; depositing to form the second doped layer by using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, borane, and carbon dioxide.

[0142] More preferably, the step of manufacturing the first doped layer of the P-type doping layer includes: controlling the ratio of each component in the mixed gas so that the doping amount of boron in the first doped layer of the formed P-type doping layer is 14 ppm - 17 ppm. The step of manufacturing the second doped layer of the P-type doping layer includes: controlling the ratio of each component in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doping layer is 40% - 65% and the doping amount of boron is 18 ppm - 22 ppm.

[0143] In the heterojunction solar cell of the present invention, the intrinsic amorphous silicon thin film layer structures on the top side and the bottom side of the substrate layer both include a four-layer structure, and the components of these four layers are all different from each other. Combining them together can give full play to the advantages of the intrinsic amorphous silicon thin film layer to a large extent and can improve the overall electrical performance or efficiency of the solar cell.

[0144] Specifically, in these four-layer structures, the composition of the first-layer intrinsic amorphous silicon thin film layer enables the amorphous silicon thin film layer not to become long-range ordered and not to grow into epitaxial silicon, and the light absorption performance of the first-layer intrinsic amorphous silicon thin film layer is poor, thus improving the short-circuit current of the cell; the second-layer intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar cell; the third-layer intrinsic amorphous silicon thin film layer can provide hydrogen passivation while having a small thickness, reduce the contact resistance of the film layer, improve the fill factor, reduce the light absorption of the film layer, and increase the short-circuit current; the fourth-layer intrinsic amorphous silicon thin film layer can be relatively dense, thus effectively preventing the diffusion of doped atoms. In addition, this layer structure can also have a high transmittance, thereby increasing the short-circuit current.

[0145] Moreover, in the present invention, the doped layers on the top side and the bottom side of the intrinsic amorphous silicon thin film layer can both have a two-layer structure, namely, an amorphous silicon layer with a lower doping concentration and a microcrystalline silicon layer with a higher doping concentration. This makes the impurity atoms diffusing outward from the amorphous silicon layer relatively few, and the microcrystalline silicon layer can form a good contact with the transparent conductive layer to reduce the contact resistance and improve the fill factor. Also, the microcrystalline silicon layer has a high transmittance, which can reduce the light absorption of the film layer, thereby increasing the short-circuit current.

[0146] The above description of various embodiments of the present invention is provided for a person of ordinary skill in the relevant art for the purpose of description. It is not intended to exclude or limit the present invention to a single disclosed embodiment. As above, a person of ordinary skill in the art taught above will understand various alternatives and modifications of the present invention. Therefore, although some alternative embodiments have been specifically described, a person of ordinary skill in the art will understand or relatively easily develop other embodiments. The present invention is intended to include all alternatives, modifications, and variations of the present invention described herein, as well as other embodiments falling within the spirit and scope of the present invention described above.

Claims

1. A heterojunction solar cell, the heterojunction solar cell comprising a substrate sheet and electrodes disposed on the top surface and the bottom surface of the substrate sheet, characterized in that, The substrate sheet includes: a single-crystalline silicon substrate layer; two groups of intrinsic amorphous silicon thin film layers, the two groups of intrinsic amorphous silicon thin film layers include a first group of intrinsic amorphous silicon thin film layers disposed on the top side of the single-crystalline silicon substrate layer and a second group of intrinsic amorphous silicon thin film layers disposed on the bottom side of the single-crystalline silicon substrate layer, and both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include the following four-layer structure arranged in sequence from the direction of the single-crystalline silicon substrate layer pointing to the electrode: a first-layer intrinsic amorphous silicon thin film layer, the first-layer intrinsic amorphous silicon thin film layer being an integral layered structure of silicon doped with a carbon group element; a second-layer intrinsic amorphous silicon thin film layer, the second-layer intrinsic amorphous silicon thin film layer being an integral layered structure deposited from a silicon source atmosphere; a third-layer intrinsic amorphous silicon thin film layer, the third-layer intrinsic amorphous silicon thin film layer being an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere; a fourth-layer intrinsic amorphous silicon thin film layer, the fourth-layer intrinsic amorphous silicon thin film layer being an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere; an N-type doped layer, the N-type doped layer being located on the top side of the first group of intrinsic amorphous silicon thin film layers; a P-type doped layer, the P-type doped layer being located on the bottom side of the second group of intrinsic amorphous silicon thin film layers; a transparent conductive layer, the transparent conductive layer being respectively disposed on the top side of the N-type doped layer and the bottom side of the P-type doped layer, and the electrode being disposed on the surface of the transparent conductive layer.

2. The heterojunction solar cell according to claim 1, wherein The first-layer intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of silane doped with at least one of alkane, alkene, and alkyne.

3. The heterojunction solar cell according to claim 1, wherein, The third-layer intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas in which the ratio of the amount of hydrogen gas to the amount of silane gas is in the range of 3 - 15.

4. The heterojunction solar cell according to claim 1, characterized in that The fourth-layer intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas in which the ratio of the amount of alkane to the amount of hydrogen is in the range of 1 / 20 - 3 / 5.

5. The heterojunction solar cell according to claim 1, characterized in that, Both the N-type doped layer and the P-type doped layer each include a first doped layer in contact with the fourth-layer intrinsic amorphous silicon thin film layer and a second doped layer in contact with the transparent conductive layer. The first doped layer is an integral layered structure of amorphous silicon, and the second doped layer is an integral layered structure of microcrystalline silicon. The doping concentration of the second doped layer is greater than that of the first doped layer.

6. The heterojunction solar cell according to claim 5, wherein The first doped layer of the N-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and phosphine; the second doped layer of the N-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, phosphine, and carbon dioxide.

7. The heterojunction solar cell according to claim 5, wherein, The first doped layer of the P-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and trimethylboron; the second doped layer of the P-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, borane, and carbon dioxide.

8. The heterojunction solar cell according to claim 5 or 6, characterized in that, The doping amount of phosphorus in the first doped layer of the N-type doped layer is 14 ppm - 17 ppm.

9. The heterojunction solar cell according to claim 5 or 6, characterized in that, The crystallinity of the second doped layer of the N-type doped layer is 40%-65%, and the doping amount of phosphorus in the second doped layer of the N-type doped layer is 18 ppm - 22 ppm.

10. The heterojunction solar cell according to claim 5 or 7, characterized in that, The doping amount of boron in the first doped layer of the P-type doped layer is 14 ppm - 17 ppm.

11. The heterojunction solar cell according to claim 5 or 7, characterized in that, The crystallinity of the second doped layer of the P-type doped layer is 40%-65%, and the doping amount of boron in the second doped layer of the P-type doped layer is 18 ppm - 22 ppm.

12. The heterojunction solar cell according to claim 1, characterized in that, The substrate layer is an N-type monocrystalline silicon substrate layer.

13. A shingled component, characterized in that, The shingled module is formed by connecting the heterojunction solar cells according to any one of claims 1-12 in a shingled manner.

14. A heterojunction solar cell, the heterojunction solar cell comprising a substrate sheet and electrodes disposed on a top surface and a bottom surface of the substrate sheet, the substrate sheet comprising: Two groups of intrinsic amorphous silicon thin film layers, the two groups of intrinsic amorphous silicon thin film layers include a first group of intrinsic amorphous silicon thin film layers disposed on the top side of the monocrystalline silicon substrate layer and a second group of intrinsic amorphous silicon thin film layers disposed on the bottom side of the monocrystalline silicon substrate layer. Both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include a four-layer structure; an N-type doped layer, the N-type doped layer is located on the top side of the first group of intrinsic amorphous silicon thin film layers; A P-type doped layer, the P-type doped layer is located on the bottom side of the second group of intrinsic amorphous silicon thin film layers; A transparent conductive layer, the transparent conductive layer is respectively disposed on the top side of the N-type doped layer and the bottom side of the P-type doped layer. The electrode is disposed on the surface of the transparent conductive layer. And both the N-type doped layer and the P-type doped layer each include a first doped layer in contact with the intrinsic amorphous silicon thin film layer and a second doped layer in contact with the transparent conductive layer. The first doped layer is an amorphous silicon integral layered structure, and the second doped layer is a microcrystalline silicon integral layered structure. The doping concentration of the second doped layer is greater than that of the first doped layer; Wherein, each of the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers includes the following four-layer structure arranged in sequence from the direction of the monocrystalline silicon substrate layer pointing to the electrode: a first layer of intrinsic amorphous silicon thin film layer, the first layer of intrinsic amorphous silicon thin film layer is an integral layered structure of carbon group element doped silicon; a second layer of intrinsic amorphous silicon thin film layer, the second layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a silicon source atmosphere; a third layer of intrinsic amorphous silicon thin film layer, the third layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere; a fourth layer of intrinsic amorphous silicon thin film layer, the fourth layer of intrinsic amorphous silicon thin film layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere.

15. The heterojunction solar cell according to claim 14, characterized in that, The first doped layer of the N-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and phosphine; the second doped layer of the N-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, phosphine, and carbon dioxide.

16. The heterojunction solar cell according to claim 14, wherein, The first doped layer of the P-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and trimethylboron; the second doped layer of the P-type doped layer is an integral layered structure deposited from a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, borane, and carbon dioxide.

17. The heterojunction solar cell according to claim 14 or 15, characterized in that, The doping amount of phosphorus in the first doped layer of the N-type doped layer is 14 ppm - 17 ppm.

18. The heterojunction solar cell according to claim 14 or 15, characterized in that, The crystallinity of the second doped layer of the N-type doped layer is 40% - 65%, and the doping amount of phosphorus in the second doped layer of the N-type doped layer is 18 ppm - 22 ppm.

19. The heterojunction solar cell according to claim 14 or 16, characterized in that, The doping amount of boron in the first doped layer of the P-type doped layer is 14 ppm - 17 ppm.

20. The heterojunction solar cell according to claim 14 or 16, characterized in that, The crystallinity of the second doped layer of the P-type doped layer is 40% - 65%, and the doping amount of boron in the second doped layer of the P-type doped layer is 18 ppm - 22 ppm.

21. A shingled component, characterized in that, The shingled module is formed by connecting the heterojunction solar cells described in any one of claims 14 - 20 in a shingled manner.

22. A method for manufacturing a heterojunction solar cell, characterized in that, The method includes the steps of manufacturing a whole heterojunction solar cell wafer and scribing the whole heterojunction solar cell wafer. Among them, the step of manufacturing the whole heterojunction solar cell wafer further includes the following steps: setting a single-crystalline silicon substrate layer; setting a first group of intrinsic amorphous silicon thin film layers on the top side of the single-crystalline silicon substrate layer, and setting a second group of intrinsic amorphous silicon thin film layers on the bottom side of the single-crystalline silicon substrate layer; setting an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, and setting a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers; setting a transparent conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer; applying electrodes on the exposed surfaces of the transparent conductive layer. Among them, the steps of setting the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include the following steps: depositing a first layer of intrinsic amorphous silicon thin film layer on the top surface or the bottom surface of the single-crystalline silicon substrate layer with a mixed gas of silicon doped with at least one of a carbon group element; depositing a second layer of intrinsic amorphous silicon thin film layer on the exposed surface of the first layer of intrinsic amorphous silicon thin film layer with a silicon source atmosphere; depositing a third layer of intrinsic amorphous silicon thin film layer on the exposed surface of the second layer of intrinsic amorphous silicon thin film layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere; depositing a fourth layer of intrinsic amorphous silicon thin film layer on the exposed surface of the third layer of intrinsic amorphous silicon thin film layer with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere.

23. The method according to claim 22, wherein The step of setting the first layer of intrinsic amorphous silicon thin film layer includes: depositing a first layer of intrinsic amorphous silicon thin film layer with a mixed gas of silane doped with at least one of an alkane, an alkene, and an alkyne.

24. The method according to claim 22, wherein The step of setting the third layer of intrinsic amorphous silicon thin film layer includes: depositing a third layer of intrinsic amorphous silicon thin film layer with a mixed gas in which the ratio of the amount of hydrogen gas to the amount of silane gas is in the range of 3 - 15.

25. The method according to claim 22, characterized in that, The steps of setting the fourth layer of intrinsic amorphous silicon thin film layer include: depositing with a mixed gas having a ratio of the amounts of alkane and hydrogen in the range of 1 / 20 - 3 / 5 to form the fourth layer of intrinsic amorphous silicon thin film layer.

26. The method according to claim 22, wherein The steps of setting the N-type doped layer and the steps of setting the P-type doped layer both include the following steps: generating a first doped layer made of amorphous silicon on the fourth layer of intrinsic amorphous silicon thin film layer using a mixed gas having a first doping concentration; generating a second doped layer made of microcrystalline silicon on the first doped layer using a mixed gas having a second doping concentration greater than the first doping concentration.

27. The method according to claim 26, characterized in that, The steps of setting the N-type doped layer include the following steps: depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and phosphine to form the first doped layer; depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, phosphine, and carbon dioxide to form the second doped layer.

28. The method according to claim 27, wherein The steps of setting the P-type doped layer include the following steps: depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane and trimethylboron to form the first doped layer; depositing with a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and silane, borane, and carbon dioxide to form the second doped layer.

29. The method according to claim 27, wherein The steps of manufacturing the first doped layer of the N-type doped layer include: controlling the proportion of each component in the mixed gas so that the doping amount of phosphorus in the first doped layer of the formed N-type doped layer is 14 ppm - 17 ppm.

30. The method according to claim 27, wherein The steps of manufacturing the second doped layer of the N-type doped layer include: controlling the proportion of each component in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40% - 65% and the doping amount of phosphorus is 18 ppm - 22 ppm.

31. The method according to claim 28, wherein The steps of manufacturing the first doped layer of the P-type doped layer include: controlling the proportion of each component in the mixed gas so that the doping amount of boron in the first doped layer of the formed P-type doped layer is 14 ppm - 17 ppm.

32. The method according to claim 28, wherein The steps of manufacturing the second doped layer of the P-type doped layer include: controlling the proportion of each component in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40% - 65% and the doping amount of boron is 18 ppm - 22 ppm.

33. The method according to claim 22, wherein Set the single-crystalline silicon substrate layer as an N-type single-crystalline silicon substrate layer.

34. A method for manufacturing a heterojunction solar cell, characterized in that, The method includes the steps of manufacturing a whole heterojunction solar cell wafer and cleaving the whole heterojunction solar cell wafer. Among them, the step of manufacturing the whole heterojunction solar cell wafer further includes the following steps: setting a monocrystalline silicon substrate layer; setting a first group of intrinsic amorphous silicon thin film layers on the top side of the monocrystalline silicon substrate layer, and setting a second group of intrinsic amorphous silicon thin film layers on the bottom side of the monocrystalline silicon substrate layer. Both the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each include a four-layer structure; setting an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, and setting a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers; setting a transparent conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer; applying electrodes on the exposed surfaces of the transparent conductive layer. Among them, the step of setting the N-type doped layer and the step of setting the P-type doped layer both include the following steps: generating a first doped layer made of amorphous silicon material on the fourth layer of intrinsic amorphous silicon thin film layer using a mixed gas with a first doping concentration; generating a second doped layer made of microcrystalline silicon material on the first doped layer using a mixed gas with a second doping concentration greater than the first doping concentration. Among them, the step of setting the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each includes the following steps: depositing a first layer of intrinsic amorphous silicon thin film layer on the top surface or bottom surface of the monocrystalline silicon substrate layer using a mixed gas of silicon doped with a carbon group element; depositing a second layer of intrinsic amorphous silicon thin film layer on the exposed surface of the first layer of intrinsic amorphous silicon thin film layer using a silicon source atmosphere; depositing a third layer of intrinsic amorphous silicon thin film layer on the exposed surface of the second layer of intrinsic amorphous silicon thin film layer using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a silicon source atmosphere; depositing a fourth layer of intrinsic amorphous silicon thin film layer on the exposed surface of the third layer of intrinsic amorphous silicon thin film layer using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, a silicon source atmosphere, and a carbon source atmosphere.

35. The method according to claim 34, wherein The step of setting the N-type doped layer includes the following steps: depositing a first doped layer using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and phosphine; depositing a second doped layer using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, phosphine, and carbon dioxide.

36. The method according to claim 34, characterized in that, The step of setting the P-type doped layer includes the following steps: depositing a first doped layer using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, and trimethylboron; depositing a second doped layer using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, silane, borane, and carbon dioxide.

37. The method according to claim 35, characterized in that, The step of manufacturing the first doped layer of the N-type doped layer includes: controlling the ratio of each component in the mixed gas so that the doping amount of phosphorus in the first doped layer of the N-type doped layer formed is 14 ppm - 17 ppm.

38. The method according to claim 35, wherein The step of manufacturing the second doped layer of the N-type doped layer includes: controlling the ratio of each component in the mixed gas so that the crystallinity of the second doped layer of the N-type doped layer formed is 40% - 65% and the doping amount of phosphorus is 18 ppm - 22 ppm.

39. The method according to claim 36, wherein The steps of manufacturing the first doped layer of the P-type doped layer include: controlling the proportion of each component in the mixed gas so that the doping amount of boron in the first doped layer of the P-type doped layer formed is 14 ppm - 17 ppm.

40. The method according to claim 36, characterized in that, The steps of manufacturing the second doped layer of the P-type doped layer include: controlling the proportion of each component in the mixed gas so that the crystallinity of the second doped layer of the P-type doped layer formed is 40% - 65% and the doping amount of boron is 18 ppm - 22 ppm.

Images