Color conversion substrate and display device

Abstract

A color conversion substrate and a display device are provided. The color conversion substrate includes: a substrate including a first light-transmitting region and a light-shielding region surrounding the first light-transmitting region; a first color filter located on the substrate in the first light-transmitting region; a first wavelength conversion pattern located in a first microcavity on the first color filter and including a first wavelength shifter; and a light-shielding member located on the substrate and in the light-shielding region. The first microcavity includes an open side, and the light-shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0030048, filed on March 15, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a color conversion substrate and a display device. Background Art

[0003] With the development of multimedia, display devices are becoming increasingly important. Therefore, various display devices such as liquid crystal display devices (LCDs) and organic light emitting diode display devices (OLEDs) are being used.

[0004] Among display devices, self-luminous display devices include self-luminous elements such as organic light-emitting diodes. A self-luminous element may include two electrodes facing each other and a light-emitting layer interposed between the two electrodes. For example, when the self-luminous element is an organic light-emitting diode, electrons and holes supplied from the two electrodes can recombine in the light-emitting layer to generate excitons. When the generated excitons change from an excited state to a ground state, light can be emitted.

[0005] Because such self-luminous display devices do not require a light source, they consume low power, can be made lightweight and thin, and have wide viewing angles, high brightness and contrast, and fast response speeds. Due to these high-quality characteristics, they are attracting attention as next-generation display devices.

[0006] As one way to make each pixel of a display device uniquely display one primary color, a color conversion pattern or a wavelength conversion pattern may be provided in each pixel on a light path extending from a light source to a viewer. Summary of the Invention

[0007] Aspects of the present disclosure provide a color conversion substrate and a display device having improved display quality.

[0008] However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referencing the detailed description of the present disclosure given below.

[0009] An embodiment of a color conversion substrate includes: a substrate including a first light-transmitting region and a light-blocking region surrounding the first light-transmitting region; a first color filter disposed on the substrate and in the first light-transmitting region; a first wavelength conversion pattern disposed in a first microcavity on the first color filter and including a first wavelength shifter; and a light-blocking member disposed on the substrate and in the light-blocking region. The first microcavity includes an open side, and the light-blocking member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity.

[0010] An embodiment of a display device includes: a first substrate including a first light-emitting region, a second light-emitting region, and a non-light-emitting region surrounding the first and second light-emitting regions; a first anode located on the first substrate and in the first light-emitting region; a second anode located on the first substrate and in the second light-emitting region; a light-emitting layer located on the first and second anodes; a cathode located on the light-emitting layer; a filler located on the cathode; a second substrate located on the filler; a first color filter located on a surface of the second substrate facing the first substrate and overlapping the first light-emitting region; a second color filter located on the surface of the second substrate and overlapping the second light-emitting region; a first wavelength conversion pattern located in a first microcavity on the first color filter and including a first wavelength shifter; a second wavelength conversion pattern located in a second microcavity on the second color filter and including a second wavelength shifter; and a light shielding member located on the surface of the second substrate and overlapping the non-light-emitting region. The first microcavity and the second microcavity each include an open side. The light shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity and in direct contact with the second wavelength conversion pattern at the open side of the second microcavity.

[0011] An embodiment of a display device includes: a first substrate including a first light-emitting region, a second light-emitting region, and a non-light-emitting region surrounding the first and second light-emitting regions; a first anode located on the first substrate and in the first light-emitting region; a second anode located on the first substrate and in the second light-emitting region; a light-emitting layer located on the first and second anodes; a cathode located on the light-emitting layer; a thin-film encapsulation layer located on the cathode; a first microcavity located on the thin-film encapsulation layer and in the first light-emitting region; a second microcavity located on the thin-film encapsulation layer and in the second light-emitting region; a first wavelength conversion pattern located in the first microcavity and including a first wavelength shifter; a second wavelength conversion pattern located in the second microcavity and including a second wavelength shifter; a first color filter located on the first wavelength conversion pattern; a second color filter located on the second wavelength conversion pattern; and a light shielding member located on the thin-film encapsulation layer and in the non-light-emitting region. The first microcavity and the second microcavity each include an open side. The light shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity and in direct contact with the second wavelength conversion pattern at the open side of the second microcavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] These and / or other aspects will become more apparent and easier to understand through the following description of the embodiments with reference to the accompanying drawings, in which:

[0013] Figure 1 is a perspective view of a display device according to an embodiment;

[0014] Figure 2 It is along Figure 1 A schematic cross-sectional view of the display device taken along line Xa-Xa';

[0015] Figure 3 yes Figure 1 and Figure 2 Schematic plan view of a display substrate in a display area of ​​a display device shown in FIG;

[0016] Figure 4 yes Figure 1 and Figure 2 A schematic plan view of a second substrate in a display area of ​​a display device shown in FIG;

[0017] Figure 5 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment taken along line X1-X1';

[0018] Figure 6 yes Figure 5 an enlarged cross-sectional view of a portion Q;

[0019] Figure 7 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment taken along line X2-X2';

[0020] Figure 8 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment taken along line X3-X3';

[0021] Figure 9 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment taken along line X4-X4';

[0022] Figure 10 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment taken along line X5-X5';

[0023] Figure 11is a plan view showing a schematic arrangement of light-shielding patterns in a second substrate of a display device according to an embodiment;

[0024] Figure 12 is a plan view showing a schematic arrangement of color filters in a second substrate of a display device according to an embodiment;

[0025] Figure 13 is a plan view showing a schematic arrangement of microcavities in a second substrate of a display device according to an embodiment;

[0026] Figure 14 is a plan view showing a schematic arrangement of first wavelength conversion patterns, second wavelength conversion patterns, and light-transmitting patterns in a second substrate of a display device according to an embodiment;

[0027] Figure 15 is a plan view showing a schematic arrangement of a color mixing prevention member in a second substrate of a display device according to an embodiment;

[0028] Figure 16 is a plan view showing a schematic arrangement of a light shielding member in a second substrate of a display device according to an embodiment;

[0029] Figure 17 、 Figure 18 、 Figure 19 、 Figure 20 and Figure 21 is based on Figure 8 A cross-sectional view illustrating a process of manufacturing a second substrate of a display device according to an embodiment of the present invention;

[0030] Figure 22 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment taken along line X1-X1';

[0031] Figure 23 It is along Figure 3 and Figure 4 The X2-X2' interception is based on Figure 22 A cross-sectional view of a display device according to an embodiment of the present invention;

[0032] Figure 24 It is along Figure 3 and Figure 4 The X3-X3' interception is based on Figure 22 A cross-sectional view of a display device according to an embodiment of the present invention;

[0033] Figure 25 It is along Figure 3 and Figure 4 The X4-X4' interception is based on Figure 22 A cross-sectional view of a display device according to an embodiment of the present invention;

[0034] Figure 26 It is along Figure 3 and Figure 4 The X5-X5' interception is based on Figure 22 A cross-sectional view of a display device according to an embodiment of the present invention; and

[0035] Figure 27 、 Figure 28 、 Figure 29 、 Figure 30 and Figure 31 is based on Figure 24 A cross-sectional view illustrating a process of manufacturing a first substrate of a display device according to an embodiment is shown with reference to a structure of FIG. DETAILED DESCRIPTION

[0036] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the present invention may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art. Throughout the specification, like reference numerals represent like components. In the drawings, the thickness of layers and regions is exaggerated for clarity.

[0037] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

[0038] For ease of description, spatially relative terms such as "under," "below," "down," "above," "up," etc. may be used herein to describe the relationship of one element or feature to another (other) element or feature as shown in the figures. It will be understood that spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as "under" or "beneath" another element or feature will then be positioned as "above" the other element or feature. Thus, the exemplary term "under" may encompass both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein interpreted accordingly.

[0039] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, the first element, component, region, layer, or part discussed below may be named a second element, component, region, layer, or part without departing from the teachings of the inventive concept.

[0040] The embodiments are described herein with reference to plan views and cross-sectional views that are schematic diagrams of idealized embodiments of the present disclosure. As such, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are to be expected. Therefore, the embodiments of the present disclosure should not be construed as limited to the specific shapes of the regions shown herein, but are to include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the present disclosure.

[0041] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0042] Figure 1 is a perspective view of a display device 1 according to the embodiment. Figure 2 It is along Figure 1 Schematic cross-sectional view of the display device 1 taken along line Xa-Xa'.

[0043] Reference Figure 1 and Figure 2 The display device 1 can be applied to various electronic devices, including small and medium-sized electronic devices such as tablet personal computers (PCs), smartphones, car navigation units, cameras, center information displays (CIDs) installed in cars, wristwatch-type electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles; as well as large and medium-sized electronic devices such as televisions, exterior billboards, monitors, PCs, and notebook computers. However, these are merely examples, and the display device 1 can also be applied to other electronic devices without departing from the scope of the present disclosure.

[0044] In some embodiments, the display device 1 may be rectangular in plan view. The display device 1 may include two first sides extending in a first direction D1 and two second sides extending in a second direction D2 intersecting the first direction D1. Each corner where the first and second sides of the display device 1 meet may be a right angle, but may also be curved (e.g., rounded). In some embodiments, the first side may be shorter than the second side. The planar shape of the display device 1 is not limited to the above examples and may also be circular or other shapes.

[0045] The display device 1 may include a display area DA that displays an image and a non-display area NDA that does not display an image. In some embodiments, the non-display area NDA may be located around the display area DA and may surround the display area DA.

[0046] Unless otherwise defined, the terms “on,” “up,” “above,” “top,” and “upper surface” used herein refer to the direction indicated by the arrow indicating the third direction D3 intersecting the first direction D1 and the second direction D2 in the drawings, and the terms “under,” “under,” “below,” “bottom,” and “lower surface” used herein refer to the direction opposite to the direction indicated by the arrow indicating the third direction D3 in the drawings.

[0047] Regarding the schematic stacking structure of the display device 1, in some embodiments, the display device 1 includes a first substrate 10 and a second substrate 30 facing the first substrate 10, and may also include a sealing portion 50 that combines the first substrate 10 and the second substrate 30, and a filler 70 located between the sealing portions 50 and filling the space between the first substrate 10 and the second substrate 30.

[0048] The first substrate 10 may include elements and circuits for displaying images (e.g., pixel circuits such as switching elements), a pixel-defining layer that defines the luminous and non-luminous regions within the display area DA, and self-luminous elements. In exemplary embodiments, the self-luminous elements may include at least one of organic light-emitting diodes (OLEDs), quantum dot LEDs, inorganic micro-LEDs (e.g., micro-LEDs), and inorganic nano-LEDs (e.g., nano-LEDs). For ease of description, the self-luminous elements will be described below as OLEDs, but they are not limited to this.

[0049] The second substrate 30 may be located on the first substrate 10 and may face the first substrate 10. In some embodiments, the second substrate 30 may include a color conversion pattern that converts the color of incident light. In other words, the second substrate 30 may be a color conversion substrate. In some embodiments, the color conversion pattern may include at least one of a color filter and a wavelength conversion pattern. Hereinafter, the second substrate and the color conversion substrate will be used interchangeably and represented by the same reference numerals.

[0050] The sealing portion 50 may be located between the first substrate 10 and the second substrate 30 in the non-display area NDA. The sealing portion 50 may be provided in the non-display area NDA along the edges of the first substrate 10 and the second substrate 30 to surround the display area DA in a plan view. The first substrate 10 and the second substrate 30 may be coupled to each other via the sealing portion 50.

[0051] In some embodiments, the sealing portion 50 may be made of an organic material, for example, epoxy resin.

[0052] The filler 70 may be located in a space between the first substrate 10 and the second substrate 30 that is surrounded by the sealing portion 50. The filler 70 may fill the space between the first substrate 10 and the second substrate 30.

[0053] In some embodiments, the filler 70 may be made of a light-transmitting material. In some embodiments, the filler 70 may be made of an organic material. For example, the filler 70 may be made of a silicon-based organic material or an epoxy-based organic material. In some embodiments, the filler 70 may be omitted.

[0054] Figure 3 yes Figure 1 and Figure 2 , more specifically, Figure 3 is a schematic plan view of the display substrate 10 in the display area DA. Figure 4 yes Figure 1 and Figure 2 Schematic plan view of the second substrate 30 in the display area DA of the display device 1 is shown in FIG.

[0055] Reference Figure 3 and Figure 4 as well as Figure 1 and Figure 2 A non-emission area NLA and a plurality of emission areas LA1 to LA6 may be defined in the first substrate 10 in the display area DA. Each of the emission areas LA1 to LA6 may be a region where light generated by a light emitting element of the first substrate 10 is emitted from the first substrate 10, and the non-emission area NLA may be a region where light is not emitted from the first substrate 10.

[0056] In some embodiments, the light emitted from the first substrate 10 in each of the light emitting areas LA1 to LA6 may be light of a first color. In some embodiments, the light of the first color may be blue light and may have a peak wavelength in the range of about 440 nm to about 480 nm.

[0057] In some embodiments, the first light-emitting area LA1, the second light-emitting area LA2, and the third light-emitting area LA3 may be sequentially repeated along the first direction D1 in the first row RL1 of the first substrate 10 in the display area DA. In addition, the fourth light-emitting area LA4, the fifth light-emitting area LA5, and the sixth light-emitting area LA6 may be sequentially repeated along the first direction D1 in the second row RL2, and the second row RL2 is adjacent to the first row RL1 along the second direction D2.

[0058] In some embodiments, the first width WL1 of the first light-emitting region LA1 measured along the first direction D1 may be smaller than each of the second width WL2 of the second light-emitting region LA2 measured along the first direction D1 and the third width WL3 of the third light-emitting region LA3 measured along the first direction D1. In some embodiments, the second width WL2 of the second light-emitting region LA2 and the third width WL3 of the third light-emitting region LA3 may be different from each other. For example, the second width WL2 of the second light-emitting region LA2 may be larger than the third width WL3 of the third light-emitting region LA3. In addition, in some embodiments, the area of ​​the first light-emitting region LA1 may be smaller than each of the area of ​​the second light-emitting region LA2 and the area of ​​the third light-emitting region LA3, or the area of ​​the first light-emitting region LA1 may be larger than each of the area of ​​the second light-emitting region LA2 and the area of ​​the third light-emitting region LA3.

[0059] In some embodiments, the fourth light-emitting region LA4 adjacent to the first light-emitting region LA1 along the second direction D2 is different from the first light-emitting region LA1 only in that it is located in the second row RL2, and can be the same or substantially the same as the first light-emitting region LA1 in width, area, and structure of elements set in the region.

[0060] Similarly, in some embodiments, the second light-emitting region LA2 and the fifth light-emitting region LA5 adjacent to each other along the second direction D2 may have the same or substantially the same structure, and the third light-emitting region LA3 and the sixth light-emitting region LA6 adjacent to each other along the second direction D2 may have the same or substantially the same structure.

[0061] A light-blocking area BA and a plurality of light-transmitting areas TA1 to TA6 may be defined in the second substrate 30 in the display area DA. Each of the light-transmitting areas TA1 to TA6 may be an area through which light emitted from the first substrate 10 is transmitted through the second substrate 30 and provided to the outside of the display device 1. The light-blocking area BA may be an area through which light emitted from the first substrate 10 is not transmitted.

[0062] In some embodiments, the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3 may be sequentially repeated along the first direction D1 in the first row RL1 of the second substrate 30 in the display area DA. The first light-transmitting area TA1 may correspond to the first light-emitting area LA1 or may (at least partially) overlap with the first light-emitting area LA1. Similarly, the second light-transmitting area TA2 may correspond to the second light-emitting area LA2 or (at least partially) overlap with the second light-emitting area LA2, and the third light-transmitting area TA3 may correspond to the third light-emitting area LA3 or (at least partially) overlap with the third light-emitting area LA3.

[0063] In some embodiments, light of a first color provided from the first substrate 10 can be emitted outside the display device 1 through the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. The light emitted from the display device 1 in the first light-transmitting area TA1 is referred to as first output light, the light emitted from the display device 1 in the second light-transmitting area TA2 is referred to as second output light, and the light emitted from the display device 1 in the third light-transmitting area TA3 is referred to as third output light. The first output light can be light of the first color, the second output light can be light of a second color different from the first color, and the third output light can be light of a third color different from both the first and second colors. In some embodiments, the first color can be blue light having a peak wavelength in the range of approximately 440 nm to approximately 480 nm, as described above, and the second color can be red light having a peak wavelength in the range of approximately 610 nm to approximately 650 nm. Furthermore, the third color can be green light having a peak wavelength in the range of approximately 510 nm to approximately 550 nm.

[0064] The fourth light-transmitting area TA4, the fifth light-transmitting area TA5, and the sixth light-transmitting area TA6 may be sequentially repeated along the first direction D1 in the second row RL2, and the second row RL2 is adjacent to the first row RL1 along the second direction D2. The fourth light-transmitting area TA4 may correspond to the fourth light-emitting area LA4 or (at least partially) overlap with the fourth light-emitting area LA4, the fifth light-transmitting area TA5 may correspond to the fifth light-emitting area LA5 or (at least partially) overlap with the fifth light-emitting area LA5, and the sixth light-transmitting area TA6 may correspond to the sixth light-emitting area LA6 or (at least partially) overlap with the sixth light-emitting area LA6.

[0065] In some embodiments, similar to the first light-emitting area LA1, the second light-emitting area LA2, and the third light-emitting area LA3, the first width WT1 of the first light-transmitting area TA1 measured along the first direction D1 may be smaller than each of the second width WT2 of the second light-transmitting area TA2 measured along the first direction D1 and the third width WT3 of the third light-transmitting area TA3 measured along the first direction D1. In some embodiments, the second width WT2 of the second light-transmitting area TA2 and the third width WT3 of the third light-transmitting area TA3 may be different from each other. For example, the second width WT2 of the second light-transmitting area TA2 may be larger than the third width WT3 of the third light-transmitting area TA3. In addition, in some embodiments, the area of ​​the first light-transmitting area TA1 may be smaller than each of the area of ​​the second light-transmitting area TA2 and the area of ​​the third light-transmitting area TA3, or the area of ​​the first light-transmitting area TA1 may be larger than each of the area of ​​the second light-transmitting area TA2 and the area of ​​the third light-transmitting area TA3.

[0066] In some embodiments, the first and fourth light-transmitting areas TA1 and TA4 adjacent to each other along the second direction D2 may be identical or substantially identical in width, area, structure of elements disposed therein, and color of light emitted from the display device 1 .

[0067] Similarly, the second light-transmitting area TA2 and the fifth light-transmitting area TA5 adjacent to each other along the second direction D2 may have the same or substantially the same structure, and may be the same or substantially the same in color of light emitted from the display device 1. In addition, the third light-transmitting area TA3 and the sixth light-transmitting area TA6 adjacent to each other along the second direction D2 may have the same or substantially the same structure, and may be the same or substantially the same in color of light emitted from the display device 1.

[0068] The light-blocking area BA may be located in the display area DA around the light-transmitting areas TA1 to TA6 of the second substrate 30. In some embodiments, the light-blocking area BA may be divided into a first light-blocking area BA1, a second light-blocking area BA2, a third light-blocking area BA3, a fourth light-blocking area BA4, a fifth light-blocking area BA5, a sixth light-blocking area BA6, and a seventh light-blocking area BA7.

[0069] The first light-shielding area BA1 can be located between the first light-transmitting area TA1 and the second light-transmitting area TA2 along the first direction D1, the second light-shielding area BA2 can be located between the second light-transmitting area TA2 and the third light-transmitting area TA3 along the first direction D1, and the third light-shielding area BA3 can be located between the third light-transmitting area TA3 and the first light-transmitting area TA1 along the first direction D1.

[0070] The fourth light-blocking area BA4 can be located between the fourth light-transmitting area TA4 and the fifth light-transmitting area TA5 along the first direction D1, the fifth light-blocking area BA5 can be located between the fifth light-transmitting area TA5 and the sixth light-transmitting area TA6 along the first direction D1, and the sixth light-blocking area BA6 can be located between the sixth light-transmitting area TA6 and the fourth light-transmitting area TA4 along the first direction D1.

[0071] The seventh light-blocking area BA7 may be located between the first row RL1 and the second row RL2 adjacent to each other along the second direction D2.

[0072] The structure of the display device 1 will now be described in more detail.

[0073] Figure 5 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 1 according to the embodiment is taken along line X1-X1'. Figure 6 yes Figure 5 An enlarged cross-sectional view of portion Q. Figure 7 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 1 according to the embodiment is taken along line X2 - X2 ′. Figure 8 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 1 according to the embodiment is taken along line X3 - X3 ′. Figure 9 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 1 according to the embodiment is taken along line X4 - X4 ′. Figure 10 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 1 according to the embodiment is taken along line X5 - X5 ′.

[0074] Reference Figures 5 to 10 as well as Figure 3 and Figure 4 The display device 1 may include the first substrate 10 and the second substrate 30 as described above, and may further include a filler 70 located between the first substrate 10 and the second substrate 30 .

[0075] The first substrate 110 may be made of a light-transmitting material. In some embodiments, the first substrate 110 may be a glass substrate or a plastic substrate. When the first substrate 110 is a plastic substrate, it may be flexible. In some embodiments, the first substrate 110 may further include a separate layer, such as a buffer layer or an insulating layer, located on the glass substrate or the plastic substrate.

[0076] In some embodiments, the light emitting areas LA1 to LA6 and the non-light emitting area NLA may be defined in the first base 110 as described above.

[0077] like Figure 5 、 Figure 7 、 Figure 8 and Figure 9 As shown in FIG, the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, and the sixth switching element T6 can be located on the first substrate 110. In some embodiments, the first switching element T1, the second switching element T2, the third switching element T3, the fourth switching element T4, the fifth switching element T5, and the sixth switching element T6 can all be disposed in the non-emission area NLA. In some embodiments, the first switching element T1 can be located in the first emission area LA1, the second switching element T2 can be located in the second emission area LA2, the third switching element T3 can be located in the third emission area LA3, the fourth switching element T4 can be located in the fourth emission area LA4, the fifth switching element T5 can be located in the fifth emission area LA5, and the sixth switching element T6 can be located in the sixth emission area LA6.

[0078] In some embodiments, each of the switching elements T1 to T6 may be a thin film transistor including polysilicon or a thin film transistor including an oxide semiconductor.

[0079] Although not shown in the drawings, a plurality of signal lines (eg, gate lines, data lines, power lines, etc.) for transmitting signals to each of the switching elements T1 to T6 may be located on the first base 110 .

[0080] The insulating film 130 may be located on the switching elements T1 to T6. In some embodiments, the insulating film 130 may be a planarization film. In some embodiments, the insulating film 130 may be made of an organic film. The insulating film 130 may include, for example, an acrylic resin, an epoxy resin, an imide resin, or an ester resin. In some embodiments, the insulating film 130 may include a positive photosensitive material or a negative photosensitive material.

[0081] The first anode AE1, the second anode AE2, the third anode AE3, the fourth anode AE4, the fifth anode AE5, and the sixth anode AE6 may be located on the insulating film 130. The first anode AE1 may be (at least partially) located in the first emission area LA1, but at least a portion of the first anode AE1 may extend to the non-emission area NLA. The second anode AE2 may be (at least partially) located in the second emission area LA2, but at least a portion of the second anode AE2 may extend to the non-emission area NLA. The third anode AE3 may be (at least partially) located in the third emission area LA3, but at least a portion of the third anode AE3 may extend to the non-emission area NLA. The fourth anode AE4 may be (at least partially) located in the fourth emission area LA4, but at least a portion of the fourth anode AE4 may extend to the non-emission area NLA. The fifth anode AE5 may be (at least partially) located in the fifth emission area LA5, but at least a portion of the fifth anode AE5 may extend to the non-emission area NLA. The sixth anode AE6 may be (at least partially) located in the sixth emission area LA6, but at least a portion of the sixth anode AE6 may extend to the non-emission area NLA. The first anode AE1 can pass through the insulating film 130 and be connected to the first switching element T1, the second anode AE2 can pass through the insulating film 130 and be connected to the second switching element T2, the third anode AE3 can pass through the insulating film 130 and be connected to the third switching element T3, the fourth anode AE4 can pass through the insulating film 130 and be connected to the fourth switching element T4, the fifth anode AE5 can pass through the insulating film 130 and be connected to the fifth switching element T5, and the sixth anode AE6 can pass through the insulating film 130 and be connected to the sixth switching element T6.

[0082] In some embodiments, the first anode AE1, the second anode AE2, and the third anode AE3 may differ in width and / or area. For example, the width of the first anode AE1 may be smaller than the width of the second anode AE2, and the width of the third anode AE3 may be smaller than the width of the second anode AE2, but the width of the third anode AE3 may be larger than the width of the first anode AE1. Alternatively, in some embodiments, the area of ​​the first anode AE1 may be smaller than the area of ​​the second anode AE2, and the area of ​​the third anode AE3 may be smaller than the area of ​​the second anode AE2, but the area of ​​the third anode AE3 may be larger than the area of ​​the first anode AE1. The width and / or area of ​​the fourth anode AE4 may be the same as or substantially the same as the width and / or area of ​​the first anode AE1, the width and / or area of ​​the fifth anode AE5 may be the same as or substantially the same as the width and / or area of ​​the second anode AE2, and the width and / or area of ​​the sixth anode AE6 may be the same as or substantially the same as the width and / or area of ​​the third anode AE3.

[0083] Anodes AE1 to AE6 may be reflective electrodes. In such an embodiment, each of anodes AE1 to AE6 may be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr. In an embodiment, each of anodes AE1 to AE6 may further include a metal oxide layer stacked on the metal layer. In exemplary embodiments, each of anodes AE1 to AE6 may have a two-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF2, or a multi-layer structure of ITO / Ag / ITO.

[0084] The pixel-defining layer 150 may be located on the anodes AE1 to AE6. The pixel-defining layer 150 may include openings that expose the anodes AE1 to AE6, respectively, and may define a first light-emitting area LA1, a second light-emitting area LA2, a third light-emitting area LA3, a fourth light-emitting area LA4, a fifth light-emitting area LA5, a sixth light-emitting area LA6, and a non-light-emitting area NLA. That is, the area of ​​the first anode AE1 not covered by the pixel-defining layer 150 may be the first light-emitting area LA1. Similarly, the area of ​​the second anode AE2 not covered by the pixel-defining layer 150 may be the second light-emitting area LA2, and the area of ​​the third anode AE3 not covered by the pixel-defining layer 150 may be the third light-emitting area LA3. Furthermore, the area where the pixel-defining layer 150 is located may be the non-light-emitting area NLA. The fourth light-emitting area LA4, the fifth light-emitting area LA5, and the sixth light-emitting area LA6 may also be defined as the areas of the fourth anode AE4, the fifth anode AE5, and the sixth anode AE6, respectively, not covered by the pixel-defining layer 150.

[0085] In some embodiments, the pixel defining layer 150 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0086] In some embodiments, the pixel defining layer 150 may (at least partially) overlap the light blocking pattern 221 described later. In addition, the pixel defining layer 150 may (at least partially) overlap the color mixing prevention member 370 and the light blocking member 380 described later.

[0087] The light emitting layer OL may be positioned on the anodes AE1 to AE6 and the pixel defining layer 150 .

[0088] In some embodiments, the light emitting layer OL may be a continuous layer formed over the light emitting areas LA1 to LA6 and the non-light emitting area NLA. The light emitting layer OL will be described in more detail later.

[0089] The cathode CE may be located on the light emitting layer OL.

[0090] In some embodiments, the cathode CE may be translucent or transparent. When the cathode CE is translucent, it may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg). Furthermore, when the thickness of the cathode CE is tens to hundreds of angstroms, the cathode CE may be translucent.

[0091] When the cathode CE has transparency, it may include a transparent conductive oxide (TCO). For example, the cathode CE may include tungsten oxide (W x O y ), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO) or magnesium oxide (MgO).

[0092] The first anode AE1, light-emitting layer OL, and cathode CE may constitute a first light-emitting element ED1; the second anode AE2, light-emitting layer OL, and cathode CE may constitute a second light-emitting element ED2; the third anode AE3, light-emitting layer OL, and cathode CE may constitute a third light-emitting element ED3. Similarly, the fourth anode AE4, light-emitting layer OL, and cathode CE may constitute a fourth light-emitting element ED4; the fifth anode AE5, light-emitting layer OL, and cathode CE may constitute a fifth light-emitting element ED5; and the sixth anode AE6, light-emitting layer OL, and cathode CE may constitute a sixth light-emitting element ED6. Each of the first light-emitting element ED1, the second light-emitting element ED2, the third light-emitting element ED3, the fourth light-emitting element ED4, the fifth light-emitting element ED5, and the sixth light-emitting element ED6 may emit output light L1, which may be provided to the second substrate 30. The color of the output light L1 emitted from each light-emitting element may be the same. For example, the output light L1 may be blue light.

[0093] In some embodiments, the light emitting layer OL may have a series structure. Figure 6 The light-emitting layer OL may include: a first stack ST1 including a first light-emitting layer EML1; a second stack ST2 located on the first stack ST1 and including a second light-emitting layer EML2; a third stack ST3 located on the second stack ST2 and including a third light-emitting layer EML3; a first charge generation layer CGL1 located between the first stack ST1 and the second stack ST2; and a second charge generation layer CGL2 located between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 may at least partially overlap one another.

[0094] The first light emitting layer EML1, the second light emitting layer EML2, and the third light emitting layer EML3 may be disposed to at least partially overlap each other.

[0095] In some embodiments, light emitted from each of the first, second, and third light-emitting layers EML1, EML2, and EML3 may have a peak wavelength less than approximately 610 nm. Each of the first, second, and third light-emitting layers EML1, EML2, and EML3 may not emit light having a peak wavelength within a range from approximately 610 nm to approximately 680 nm, for example, red light.

[0096] In some embodiments, the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 may all emit light of a first color, for example, blue light. For example, each of the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 may be a blue light-emitting layer and may include an organic material.

[0097] In some embodiments, each of the first light emitting layer EML1, the second light emitting layer EML2, and the third light emitting layer EML3 may include a host and a dopant. The host is not particularly limited as long as it is a generally used material. For example, tris(8-hydroxyquinolinolato)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(N-vinylcarbazole) (PVK), 9,10-di(naphthalene-2-yl)anthracene (AND), 4,4',4''-tri(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tri(N-phenylbenzimidazol-2-yl)benzene (TPBi), 2-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), or 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN) can be used as a host.

[0098] Each of the first, second, and third light-emitting layers EML1, EML2, and EML3 that emit blue light may include a fluorescent material including any one of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), polyfluorene (PFO)-based polymers, and polyparaphenylenevinylene (PPV)-based polymers. Alternatively, a phosphorescent material including an organometallic complex such as (4,6-F2ppy)2Irpic may be used.

[0099] According to the above-described embodiment, compared with a related art light emitting element not having a tandem structure (ie, not adopting a structure in which a plurality of light emitting layers are stacked), light efficiency can be increased and a long life can be achieved.

[0100] The first charge generation layer CGL1 may be located between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may inject charges into each light-emitting layer. The first charge generation layer CGL1 may control the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be disposed on the n-type charge generation layer CGL11 and may be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0101] The first charge generation layer CGL1 may have a structure in which an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12 are combined with each other. The n-type charge generation layer CGL11 is configured to supply electrons to the first light-emitting layer EML1, and the p-type charge generation layer CGL12 is configured to supply holes to the second light-emitting layer EML2 included in the second stack ST2. Because the first charge generation layer CGL1, located between the first stack ST1 and the second stack ST2, is configured to supply charges to each light-emitting layer, luminous efficiency can be improved and driving voltage can be reduced compared to conventional displays.

[0102] The first stack ST1 may further include a first hole transport layer HTL1 , a first electron blocking layer BIL1 , and a first electron transport layer ETL1 .

[0103] The first hole transport layer HTL1 can facilitate hole transport and may include a hole transport material. The hole transport material may include, but is not limited to: carbazole derivatives such as N-phenylcarbazole or polyvinylcarbazole; fluorene derivatives; triphenylamine derivatives such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD) or 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA); N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB); or 4,4'-cyclohexylene-bis[N,N-bis(4-methylphenyl)aniline] (TAPC).

[0104] The first electron blocking layer BIL1 may be located on the first hole transport layer HTL1 and may be located between the first hole transport layer HTL1 and the first light-emitting layer EML1. The first electron blocking layer BIL1 may include a hole transport material and a metal or a metal compound to prevent or at least reduce electrons generated by the first light-emitting layer EML1 from entering the first hole transport layer HTL1. In some embodiments, the first hole transport layer HTL1 and the first electron blocking layer BIL1 may be formed as a single layer in which their respective materials are mixed.

[0105] The first electron transport layer ETL1 may be located on the first light emitting layer EML1 and may be located between the first charge generation layer CGL1 and the first light emitting layer EML1. In some embodiments, the first electron transport layer ETL1 may include an electron transport material such as tris-(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TA Z), 4-(naphthalene-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinolato-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), bis(benzoquinolinolato-10-hydroxy)beryllium (Bebq2), 9,10-di(naphthalene-2-yl)anthracene (AND), or mixtures thereof. However, embodiments are not limited to any particular type of electron transport material.

[0106] The second stack ST2 may be positioned on the first charge generation layer CGL1 and may further include a second hole transport layer HTL2 , a second electron blocking layer BIL2 , and a second electron transport layer ETL2 .

[0107] The second hole transport layer HTL2 may be positioned on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as that of the first hole transport layer HTL1, or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer HTL1.

[0108] The second electron blocking layer BIL2 may be located on the second hole transport layer HTL2 and may be located between the second hole transport layer HTL2 and the second light emitting layer EML2. The second electron blocking layer BIL2 may have the same material and structure as the first electron blocking layer BIL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron blocking layer BIL1.

[0109] The second electron transport layer ETL2 may be located on the second light emitting layer EML2 and may be located between the second charge generation layer CGL2 and the second light emitting layer EML2. The second electron transport layer ETL2 may have the same material and structure as the first electron transport layer ETL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer ETL1.

[0110] The second charge generation layer CGL2 may be located on the second stack ST2 and may be located between the second stack ST2 and the third stack ST3 .

[0111] The second charge generation layer CGL2 may have the same structure as the first charge generation layer CGL1. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 closer to (e.g., adjacent to) the second stack ST2 and a p-type charge generation layer CGL22 closer to (e.g., adjacent to) the cathode CE. The p-type charge generation layer CGL22 may be located above the n-type charge generation layer CGL21.

[0112] The second charge generation layer CGL2 may have a structure in which an n-type charge generation layer CGL21 and a p-type charge generation layer CGL22 are in contact with each other. The first charge generation layer CGL1 and the second charge generation layer CGL2 may be made of different materials or the same material.

[0113] The third stack ST3 may be positioned on the second charge generation layer CGL2 and may further include a third hole transport layer HTL3 , a third electron blocking layer BIL3 , and a third electron transport layer ETL3 .

[0114] The third hole transport layer HTL3 may be located on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer HTL1. The third electron blocking layer BIL3 may be located on the third hole transport layer HTL3 and may be located between the third hole transport layer HTL3 and the third light-emitting layer EML3. The third electron blocking layer BIL3 may have the same material and structure as the first electron blocking layer BIL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron blocking layer BIL1.

[0115] The third electron transport layer ETL3 may be located on the third light emitting layer EML3 and may be located between the cathode CE and the third light emitting layer EML3. The third electron transport layer ETL3 may have the same material and structure as the first electron transport layer ETL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer ETL1.

[0116] like Figure 5 and Figures 7 to 10As shown in FIG, thin-film encapsulation layer 170 is located on cathode CE. Thin-film encapsulation layer 170 is common to both emission areas LA1 to LA6 and non-emission area NLA. In some embodiments, thin-film encapsulation layer 170 directly covers cathode CE. In some embodiments, a capping layer (not shown) covering cathode CE may be located between thin-film encapsulation layer 170 and cathode CE. In such embodiments, thin-film encapsulation layer 170 may directly cover the capping layer.

[0117] In some embodiments, the thin film encapsulation layer 170 may include a first encapsulation inorganic layer 171 , an encapsulation organic layer 173 , and a second encapsulation inorganic layer 175 sequentially stacked on the cathode CE.

[0118] In some embodiments, each of first encapsulating inorganic layer 171 and second encapsulating inorganic layer 175 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

[0119] In some embodiments, the encapsulating organic layer 173 may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, or perylene resin.

[0120] The stack structure of the thin film encapsulation layer 170 is not limited to the above example and may be changed in various ways.

[0121] Now refer to Figures 11 to 16 as well as Figures 5 to 10 Description of the second substrate 30. In the current embodiment, the second substrate 30 is the color conversion substrate as described above.

[0122] Figure 11 is a plan view illustrating a schematic arrangement of light-shielding patterns 221 in the second substrate 30 of the display device 1 according to one embodiment. Figure 12 is a plan view illustrating a schematic arrangement of color filters 231 , 233 , and 235 in the second substrate 30 of the display device 1 according to one embodiment. Figure 13 is a plan view illustrating a schematic arrangement of microcavities C1 to C6 in the second substrate 30 of the display device 1 according to the embodiment. Figure 14 is a plan view illustrating a schematic arrangement of first wavelength conversion patterns 340 , second wavelength conversion patterns 350 , and light-transmitting patterns 330 in the second substrate 30 of the display device 1 according to one embodiment. Figure 15 is a plan view illustrating a schematic arrangement of a color mixing prevention member 370 in the second substrate 30 of the display device 1 according to one embodiment. Figure 16is a plan view showing a schematic arrangement of a light shielding member 380 in the second substrate 30 of the display device 1 according to one embodiment.

[0123] Reference Figures 5 to 16 , Figures 5 to 10 The second substrate 310 shown in FIG can be made of a light-transmitting material. In some embodiments, the second substrate 310 may include a glass substrate or a plastic substrate. In some embodiments, the second substrate 310 may further include a separate layer on the glass substrate or the plastic substrate, for example, an insulating layer such as an inorganic layer.

[0124] In some embodiments, the light-transmitting areas TA1 to TA6 and the light-blocking area BA may be as follows: Figure 4 is shown as being defined in the second matrix 310 .

[0125] like Figure 5 and Figures 7 to 11 As shown in FIG, the light shielding pattern 221 may be located on the surface of the second base 310 facing the first substrate 10. The light shielding pattern 221 may be located in the light shielding area BA to block the transmission of light. In some embodiments, the light shielding pattern 221 may be as shown in FIG. Figure 11 The grid is set as a basic form in plan view as shown in .

[0126] In some embodiments, the light-shielding pattern 221 may include an organic light-shielding material, and may be formed by coating the organic light-shielding material and exposing and developing the organic light-shielding material.

[0127] like Figure 5 and Figures 7 to 12 As shown in , the first color filter 231 , the second color filter 233 , and the third color filter 235 may be located on a surface of the second base 310 facing the first substrate 10 .

[0128] In some embodiments, the first color filter 231 in the first light-transmitting area TA1 and the first color filter 231 in the fourth light-transmitting area TA4 may be spaced apart from each other along the second direction D2.

[0129] The first color filter 231 may transmit only a first color of light (e.g., blue light) and may block or absorb a second color of light (e.g., red light) and a third color of light (e.g., green light). In some embodiments, the first color filter 231 may be a blue color filter and may include a blue colorant such as a blue dye or a blue pigment.

[0130] The second color filter 233 may be located in the second light-transmitting area TA2 and the fifth light-transmitting area TA5 , and the third color filter 235 may be located in the third light-transmitting area TA3 and the sixth light-transmitting area TA6 .

[0131] In some embodiments, the second color filter 233 can block or absorb light of a first color (e.g., blue light). That is, the second color filter 233 can function as a blue-blocking filter that blocks blue light. In some embodiments, the second color filter 233 can transmit only light of a second color (e.g., red light) and block or absorb light of the first color (e.g., blue light) and light of a third color (e.g., green light). For example, the second color filter 233 can be a red color filter and can include a red colorant.

[0132] The third color filter 235 can block or absorb light of a first color (e.g., blue light). In other words, the third color filter 235 can also function as a blue-blocking filter that blocks blue light. In some embodiments, the third color filter 235 can transmit only light of a third color (e.g., green light) and can block or absorb light of a first color (e.g., blue light) and light of a second color (e.g., red light). For example, the third color filter 235 can be a green filter and can include a green colorant.

[0133] In some embodiments, at least a portion of each of one side and the other side of the first color filter 231, at least a portion of each of one side and the other side of the second color filter 233, and at least a portion of each of one side and the other side of the third color filter 235 can be located in the shading area BA and can overlap with the shading pattern 221.

[0134] like Figure 5 and Figures 7 to 10 As shown in FIG, a first capping layer 391 may be located on the surface of the second base 310 (e.g., indirectly located on the surface of the second base 310) to cover the light-shielding pattern 221, the first color filter 231, the second color filter 233, and the third color filter 235. In some embodiments, the first capping layer 391 may be in direct contact with the first color filter 231, the second color filter 233, and the third color filter 235. In some embodiments, the first capping layer 391 may also be in contact with the light-shielding pattern 221.

[0135] The first capping layer 391 can prevent impurities such as moisture or air from being introduced from the outside and damaging or contaminating the light-shielding pattern 221, the first color filter 231, the second color filter 233, and the third color filter 235. In addition, the first capping layer 391 can prevent the colorant contained in the first color filter 231, the second color filter 233, and the third color filter 235 from diffusing to other elements such as the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350. In some embodiments, the first capping layer 391 can be made of an inorganic material. For example, the first capping layer 391 can be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, or silicon oxynitride.

[0136] like Figure 5 、 Figures 7 to 10 and Figure 13 As shown in FIG, the microcavity may be located on the first capping layer 391. For example, a first microcavity C1, a second microcavity C2, a third microcavity C3, a fourth microcavity C4, a fifth microcavity C5, and a sixth microcavity C6 may be located on the first capping layer 391.

[0137] The first microcavity C1 may be located in the first light-transmitting area TA1. In some embodiments, a side surface C1a of the first microcavity C1 may be located in the seventh light-shielding area BA7 and face the side surface C4a of the fourth microcavity C4, and may be open. In one embodiment, when the side surface C1a of the first microcavity C1 is open, it may mean that the side surface C1a of the first microcavity C1 is not covered by the second cover layer 393, which will be described later.

[0138] The second microcavity C2 may be located in the second light-transmitting area TA2. In some embodiments, a side surface C2a of the second microcavity C2 may be located in the seventh light-shielding area BA7 and face a side surface C5a of the fifth microcavity C5, and may be open.

[0139] The third microcavity C3 may be located in the third light-transmitting area TA3. In some embodiments, a side surface C3a of the third microcavity C3 may be located in the seventh light-shielding area BA7 and face a side surface C6a of the sixth microcavity C6, and may be open.

[0140] The fourth microcavity C4 may be located in the fourth light-transmitting area TA4. In some embodiments, a side surface C4a of the fourth microcavity C4 may be located in the seventh light-shielding area BA7 and face the side surface C1a of the first microcavity C1, and may be open.

[0141] The fifth microcavity C5 may be located in the fifth light-transmitting area TA5. In some embodiments, a side surface C5a of the fifth microcavity C5 may be located in the seventh light-blocking area BA7 and face a side surface C2a of the second microcavity C2, and may be open.

[0142] The sixth microcavity C6 may be located in the sixth light-transmitting area TA6. In some embodiments, a side surface C6a of the sixth microcavity C6 may be located in the seventh light-blocking area BA7 and face a side surface C3a of the third microcavity C3, and may be open.

[0143] The open side of each of the microcavities C1 to C6 may be used as an inlet through which a material is injected into the microcavity in a process of manufacturing the second substrate 30 .

[0144] The first to sixth microcavities C1 , C2 , C3 , C4 , C5 , and C6 may be defined between the first to second capping layer 391 and a second capping layer 393 to be described later.

[0145] like Figure 5 、 Figures 7 to 10 and Figure 14 As shown in , the light-transmitting pattern 330 , the first wavelength conversion pattern 340 , and the second wavelength conversion pattern 350 may be located on the first cover layer 391 .

[0146] In some embodiments, the light-transmitting pattern 330 , the first wavelength conversion pattern 340 , and the second wavelength conversion pattern 350 may be formed using an inkjet method.

[0147] The light-transmitting pattern 330 may be located on the first capping layer 391 (e.g., directly on the first capping layer 391) and may be located in the first light-transmitting area TA1 and the fourth light-transmitting area TA4. The light-transmitting pattern 330 may (at least partially) overlap with the first color filter 231. In some embodiments, the light-transmitting pattern 330 may be located in the first microcavity C1 and the fourth microcavity C4 and may fill or substantially fill the first microcavity C1 and the fourth microcavity C4.

[0148] The light-transmitting pattern 330 can transmit incident light. The output light L1 provided by the first light-emitting element ED1 can be blue light as described above. The output light L1 as blue light passes through the light-transmitting pattern 330 and the first color filter 231 and is emitted from the display device 1. In other words, the light output from the first light-transmitting area TA1 can be blue light.

[0149] In some embodiments, the light-transmitting pattern 330 may include a first base resin 331 , and may further include a first scatterer 333 dispersed in the first base resin 331 .

[0150] The first matrix resin 331 may be made of a material having high light transmittance. In some embodiments, the first matrix resin 331 may be made of an organic material. For example, the first matrix resin 331 may include an organic material such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0151] The first scatterers 333 may have a refractive index different from that of the first base resin 331 and may form an optical interface with the first base resin 331. For example, the first scatterers 333 may be light-scattering particles. The first scatterers 333 may be any material that scatters at least a portion of the transmitted light. For example, the first scatterers 333 may be metal oxide particles or organic particles. Examples of metal oxides include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), and tin oxide (SnO2). Examples of organic particulate materials include acrylic resin and urethane resin. Regardless of the incident direction of the light, the first scatterers 333 can scatter the incident light in random directions without substantially changing the wavelength of the light transmitted through the light-transmitting pattern 330.

[0152] The first wavelength conversion pattern 340 may be located on the first capping layer 391 (e.g., directly on the first capping layer 391) and may be located in the second light-transmitting area TA2 and the fifth light-transmitting area TA5. The first wavelength conversion pattern 340 may (at least partially) overlap the second color filter 233. In some embodiments, the first wavelength conversion pattern 340 may be located in the second microcavity C2 and the fifth microcavity C5 and may fill or substantially fill the second microcavity C2 and the fifth microcavity C5.

[0153] The first wavelength conversion pattern 340 can convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light having the converted or shifted specific peak wavelength. In some embodiments, the first wavelength conversion pattern 340 can convert blue light, which is the output light L1 provided by the second light-emitting element ED2, into red light having a peak wavelength in the range of approximately 610 nm to approximately 650 nm and output the red light.

[0154] In some embodiments, the first wavelength conversion pattern 340 may include a second base resin 341 and first wavelength shifters 345 dispersed in the second base resin 341. The first wavelength conversion pattern 340 may further include second scatterers 343 dispersed in the second base resin 341.

[0155] The second base resin 341 may be made of a material having high light transmittance. In some embodiments, the second base resin 341 may be made of an organic material. In some embodiments, the second base resin 341 may be made of the same material as the first base resin 331, or may include at least one of the materials exemplified as the constituent materials of the first base resin 331.

[0156] The first wavelength shifter 345 can convert or shift the peak wavelength of the incident light to another specific peak wavelength. In some embodiments, the first wavelength shifter 345 can convert the first color light (i.e., output light L1), which is blue light provided by the second light-emitting element ED2, into red light having a single peak wavelength in the range of approximately 610 nm to approximately 650 nm, and output the red light.

[0157] Examples of the first wavelength shifter 345 may include quantum dots, quantum rods, and phosphors. For example, quantum dots may be a particle material that emits light of a specific color when electrons transition or move from a conduction band to a valence band.

[0158] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have a specific band gap depending on their composition and size. Therefore, quantum dots can absorb light and then emit light with a unique wavelength. Examples of semiconductor nanocrystals that are quantum dots include Group IV element nanocrystals, Group IV compound nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, Group IV-VI compound nanocrystals, and combinations thereof.

[0159] The II-VI compound can be a binary compound selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a ternary compound selected from InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnP, CdZnS ...SeS, CdSeS, CdSeTe, CdSTe, CdSeS, CdSeS, CdSeTe, CdSTe, CdSeS, CdSeS, CdSeTe, CdSTe, CdZnS, CdZnS, Cd nSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and / or a quaternary compound selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0160] The III-V compound may be: a binary compound selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; a ternary compound selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and / or a quaternary compound selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, GaAlNP and mixtures thereof.

[0161] The Group IV-VI compound may be a binary compound selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a ternary compound selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and / or a quaternary compound selected from SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The Group IV element may be selected from silicon (Si), germanium (Ge), and mixtures thereof. The Group IV compound may be a binary compound selected from silicon carbide (SiC), silicon germanium (SiGe), and mixtures thereof.

[0162] In one embodiment, the binary, ternary, and / or quaternary compounds may be present in a uniform concentration within the particle, or may be present in the same particle at locally varying concentrations. Furthermore, they may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0163] In some embodiments, quantum dots may have a core-shell structure comprising a core comprising the above-described nanocrystals and a shell surrounding the core. The shell of each quantum dot may serve as a protective layer for maintaining semiconductor properties by preventing or at least mitigating chemical denaturation of the core, and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. The shell of each quantum dot may be, for example, a metal oxide or a non-metal oxide, a semiconductor compound, or a combination thereof.

[0164] For example, the metal oxide or non-metal oxide may be, but is not limited to, a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4.

[0165] In addition, the semiconductor compound can be, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, or AlSb.

[0166] The light emitted from the first wavelength shifter 345 can have a full width at half maximum (FWHM) of the emission wavelength spectrum of approximately 45 nm or less (approximately 40 nm or less, or approximately 30 nm or less). Therefore, the color purity and color gamut of the display device 1 can be improved compared to conventional display devices without the first wavelength shifter 345. Furthermore, the light emitted from the first wavelength shifter 345 can be radiated in various directions regardless of the incident direction of the incident light. Therefore, the lateral visibility of the second color displayed in the second light-transmitting area TA2 can be improved compared to conventional display devices without the first wavelength shifter 345.

[0167] A portion of the output light L1, which is blue light provided by the second light-emitting element ED2, transmits through the first wavelength conversion pattern 340 without being converted into red light by the first wavelength shifter 345. Of the output light L1, the component that is incident on the second color filter 233 and not converted by the first wavelength conversion pattern 340 can be blocked by the second color filter 233. On the other hand, the red light, which has been converted by the first wavelength conversion pattern 340 (e.g., the first wavelength shifter 345) into a portion of the output light L1, can transmit through the second color filter 233 and be emitted to the outside. Therefore, the light output from the second light-transmitting area TA2 can be red light.

[0168] The second scatterers 343 may have a refractive index different from that of the second matrix resin 341 and may form an optical interface with the second matrix resin 341. For example, the second scatterers 343 may be light scattering particles. Other details of the second scatterers 343 are substantially the same as or similar to those of the first scatterers 333, and thus a detailed description thereof is omitted.

[0169] The second wavelength conversion pattern 350 may be located on the first capping layer 391 (e.g., directly on the first capping layer 391) and may be located in the third light-transmitting area TA3 and the sixth light-transmitting area TA6. The second wavelength conversion pattern 350 may (at least partially) overlap with the third color filter 235. In some embodiments, the second wavelength conversion pattern 350 may be located in the third microcavity C3 and the sixth microcavity C6 and may fill or substantially fill the third microcavity C3 and the sixth microcavity C6.

[0170] The second wavelength conversion pattern 350 can convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light having the converted or shifted specific peak wavelength. In some embodiments, the second wavelength conversion pattern 350 can convert blue light, which is the output light L1 provided by the third light-emitting element ED3, into green light in a range of approximately 510 nm to approximately 550 nm and output green light.

[0171] In some embodiments, the second wavelength conversion pattern 350 may include a third base resin 351 and second wavelength shifters 355 dispersed in the third base resin 351. In some embodiments, the second wavelength conversion pattern 350 may further include third scatterers 353 dispersed in the third base resin 351.

[0172] The third matrix resin 351 may be made of a material having high light transmittance. In some embodiments, the third matrix resin 351 may be made of an organic material. In some embodiments, the third matrix resin 351 may be made of the same material as the first matrix resin 331, or may include at least one of the materials exemplified as the constituent materials of the first matrix resin 331.

[0173] The second wavelength shifter 355 can convert or shift the peak wavelength of the incident light to another specific peak wavelength. In some embodiments, the second wavelength shifter 355 can convert blue light having a peak wavelength in the range of approximately 440 nm to approximately 480 nm to green light having a peak wavelength in the range of approximately 510 nm to approximately 550 nm.

[0174] Examples of the second wavelength shifter 355 may include quantum dots, quantum rods, and phosphors. The second wavelength shifter 355 is substantially the same as or similar to the first wavelength shifter 345 described above, and thus a detailed description thereof is omitted.

[0175] In some embodiments, the first wavelength shifter 345 and the second wavelength shifter 355 may be composed entirely of quantum dots. In such embodiments, the particle size of the quantum dots constituting the first wavelength shifter 345 may be larger than the particle size of the quantum dots constituting the second wavelength shifter 355.

[0176] The third scatterers 353 may have a refractive index different from that of the third matrix resin 351 and may form an optical interface with the third matrix resin 351. For example, the third scatterers 353 may be light scattering particles. Other details of the third scatterers 353 are substantially the same as or similar to those of the second scatterers 343, and thus a detailed description thereof is omitted.

[0177] like Figure 5 and Figures 7 to 10 As shown in FIG, a second capping layer 393 may be located on (e.g., directly on) the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The second capping layer 393 may cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The second capping layer 393 may be in contact with the first capping layer 391 and may seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350, thereby preventing impurities such as moisture or air from being introduced from the outside and damaging and / or contaminating the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.

[0178] In some embodiments, the second capping layer 393 may be made of an inorganic material. In some embodiments, the second capping layer 393 may be made of the same material as the first capping layer 391 , or may include at least one of the materials mentioned in the description of the first capping layer 391 .

[0179] In some embodiments, the second capping layer 393 together with the first capping layer 391 may define a first microcavity C1 , a second microcavity C2 , a third microcavity C3 , a fourth microcavity C4 , a fifth microcavity C5 , and a sixth microcavity C6 .

[0180] In some embodiments, the second capping layer 393 may not cover the side surfaces C1a of the first microcavity C1, C2a of the second microcavity C2, C3a of the third microcavity C3, C4a of the fourth microcavity C4, C5a of the fifth microcavity C5, and C6a of the sixth microcavity C6.

[0181] like Figure 5 and Figure 15As shown in FIG, the anti-color mixing member 370 may be located on the second cover layer 393 (e.g., directly on the second cover layer 393). The anti-color mixing member 370 may be located in the light-blocking area BA and may block the transmission of light. In some embodiments, the anti-color mixing member 370 may be located between the light-transmitting pattern 330 and the first wavelength conversion pattern 340, and between the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350, to prevent color mixing between adjacent (e.g., neighboring) light-transmitting areas. In some embodiments, the anti-color mixing member 370 may be formed in a stripe shape extending along the second direction D2.

[0182] In some embodiments, the anti-color mixing member 370 may be located in the first light-blocking area BA1, the second light-blocking area BA2, the third light-blocking area BA3, the fourth light-blocking area BA4, the fifth light-blocking area BA5, and the sixth light-blocking area BA6 of the light-blocking area BA. In some embodiments, the anti-color mixing member 370 may not be located in the seventh light-blocking area BA7. Alternatively, in some embodiments, a portion of the anti-color mixing member 370 may be located in the seventh light-blocking area BA7.

[0183] In some embodiments, the color mixing prevention member 370 may include an organic light-shielding material, and may be formed by coating the organic light-shielding material and exposing and developing the organic light-shielding material.

[0184] A first insulating layer 394 covering the color mixing prevention member 370 may be positioned on the second capping layer 393 .

[0185] In some embodiments, the first insulating layer 394 may cover a portion of the side and the top of each of the microcavities C1 to C6, but may not cover the side C1a of the first microcavity C1, the side C2a of the second microcavity C2, the side C3a of the third microcavity C3, the side C4a of the fourth microcavity C4, the side C5a of the fifth microcavity C5, and the side C6a of the sixth microcavity C6.

[0186] In some embodiments, the first insulating layer 394 may be made of an organic material. The first insulating layer 394 may be hardened by a curing process to maintain the shape of each of the microcavities C1 to C6. In some embodiments, the first insulating layer 394 may be omitted.

[0187] The second insulating layer 395 may be located on the first insulating layer 394 (eg, directly on the first insulating layer 394). The second insulating layer 395 may be made of a material such as silicon nitride (SiN x ) or silicon oxide (SiO x). The second insulating layer 395 may cover the upper surface of the first insulating layer 394 and protect the first insulating layer 394. In some embodiments, like the first insulating layer 394, the second insulating layer 395 may not cover the side surface C1a of the first microcavity C1, the side surface C2a of the second microcavity C2, the side surface C3a of the third microcavity C3, the side surface C4a of the fourth microcavity C4, the side surface C5a of the fifth microcavity C5, and the side surface C6a of the sixth microcavity C6.

[0188] The light blocking member 380 may be located on the second insulating layer 395 (eg, directly on the second insulating layer 395). The light blocking member 380 may be located in the seventh light blocking area BA7 of the light blocking area BA. In some embodiments, the light blocking member 380 may be, for example, Figure 16 As shown in FIG, the light shielding member 380 is formed into a stripe shape extending along the first direction D1. The light shielding member 380 can prevent or at least reduce the light emitted from any light-emitting area from entering another unintended light-transmitting area. For example, the light shielding member 380 can prevent or at least reduce the light emitted from the first light-emitting area LA1 from entering the fourth light-transmitting area TA4, the fifth light-transmitting area TA5, the sixth light-transmitting area TA6, etc. (for example, any area other than the first light-emitting area LA1).

[0189] In some embodiments, a portion of the light shielding member 380 may seal each of the microcavities C1 to C6, the portion being located in the seventh light shielding area BA7 in which the side C1a of the first microcavity C1, the side C2a of the second microcavity C2, the side C3a of the third microcavity C3, the side C4a of the fourth microcavity C4, the side C5a of the fifth microcavity C5, and the side C6a of the sixth microcavity C6 are located. That is, the light shielding member 380 may serve as a sealing member for sealing each of the microcavities C1 to C6, and a portion of the light shielding member 380 may cover the side C1a of the first microcavity C1, the side C2a of the second microcavity C2, the side C3a of the third microcavity C3, the side C4a of the fourth microcavity C4, the side C5a of the fifth microcavity C5, and the side C6a of the sixth microcavity C6.

[0190] In some embodiments, a portion of each of the sealed microcavities C1 to C6 of the light blocking member 380 may be in direct contact with the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Furthermore, in some embodiments, a portion of each of the sealed microcavities C1 to C6 of the light blocking member 380 may be in direct contact with the first capping layer 391, and may also be in direct contact with the first insulating layer 394 and the second insulating layer 395.

[0191] In some embodiments, the light blocking member 380 may include an organic light blocking material, and may be formed by coating the organic light blocking material and exposing and developing the organic light blocking material.

[0192] A third insulating layer 396 covering the light blocking member 380 may be located on (eg, directly on) the second insulating layer 395 , and a fourth insulating layer 397 may be located on (eg, directly on) the third insulating layer 396 .

[0193] The third insulating layer 396 and the fourth insulating layer 397 may seal elements located thereunder. In some embodiments, the third insulating layer 396 may be made of an organic insulating material, and the fourth insulating layer 397 may be made of an inorganic insulating material.

[0194] As described above, the filler 70 may be located in the space between the second substrate 30 and the first substrate 10. In some embodiments, the filler 70 may be, for example, Figure 5 and Figures 7 to 10 39. As shown in FIG. 39, the filler 70 is located between the fourth insulating layer 397 and the thin film encapsulation layer 170. In some embodiments, the filler 70 may be in direct contact with the fourth insulating layer 397 and the thin film encapsulation layer 170.

[0195] Now we will refer to Figures 17 to 21 A process of manufacturing the second substrate 30 will be described.

[0196] Figure 17 、 Figure 18 、 Figure 19 、 Figure 20 and Figure 21 is based on Figure 8 sectional views illustrating a process of manufacturing the second substrate 30 of the display device 1 according to an embodiment are shown based on the structure of FIG.

[0197] Reference Figures 17 to 21 as well as Figures 5 to 16 First, a first color filter 231 is formed on the second substrate 310 (see Figure 5 ), the second color filter 233, the third color filter 235 (see Figure 5 ) and the light shielding pattern 221, and as Figure 17 As shown in FIG, a first capping layer 391 is formed on the first color filter 231 , the second color filter 233 , the third color filter 235 and the light shielding pattern 221 .

[0198] Then, a sacrificial pattern SP is formed on the first capping layer 391. The sacrificial pattern SP may be formed over two light-transmitting regions adjacent to each other along the second direction D2, and a portion of the sacrificial pattern SP may be positioned in the seventh light-blocking area BA7.

[0199] In some embodiments, the sacrificial pattern SP may be formed by applying a photosensitive organic material and exposing and developing the photosensitive organic material. In some embodiments, the sacrificial pattern SP may have a thickness ranging from about 1 μm to about 20 μm.

[0200] Next, a second capping layer 393 is formed on the first capping layer 391 to cover the sacrificial pattern SP. In some embodiments, the second capping layer 393 may be made of an inorganic insulating material and may be formed using a plasma-enhanced chemical vapor deposition (PECVD) process. In some embodiments, the thickness of the second capping layer 393 may be in a range of approximately 1,000 Å to approximately 20,000 Å.

[0201] Next, an anti-color mixing member 370 is formed on the second cover layer 393 (see FIG. Figure 5 ), and a first insulating layer 394 is formed on the second capping layer 393 to cover the color mixing prevention member 370 (see Figure 5 The first insulating layer 394 may be formed by applying a photosensitive organic material and exposing and developing the photosensitive organic material, and may be formed to expose a portion of the second capping layer 393 located in the seventh light-shielding area BA7.

[0202] Next, the second insulating layer 395 is formed on the first insulating layer 394. The second insulating layer 395 may be formed to cover the first insulating layer 394.

[0203] Then, if Figure 18 As shown in FIG, portions of the second insulating layer 395 and the second capping layer 393 that are not covered by the first insulating layer 394 in the seventh light-blocking area BA7 are removed to expose the sacrificial pattern SP.

[0204] Then, if Figure 19 As shown in , the exposed sacrificial pattern SP is removed by supplying a material ET such as a developer or stripper solution to the exposed sacrificial pattern SP (or by using an ashing (eg, plasma ashing) process). Then, as shown in FIG. Figure 20 As shown in FIG, microcavities such as a second microcavity C2 having an open side surface C2a and a fifth microcavity C5 having an open side surface C5a are formed in the locations where the sacrificial patterns SP are located. Similarly, a first microcavity C1 (see FIG) is formed, each having open side surfaces C1a, C3a, C4a, and C6a. Figure 7 ), the third microcavity C3 (see Figure 9 ), the fourth microcavity C4 (see Figure 7 ) and the sixth microcavity C6 (see Figure 9 ).

[0205] Next, when the ink is ejected into the open portion of each micro-chamber using the nozzle NZ, the ejected ink is ejected into each micro-chamber by capillary action. Figure 20 As shown in FIG, when ink 340 a containing the second scatterer 343 and the first wavelength shifter 345 is ejected between the side surface C2 a of the second microcavity C2 and the side surface C5 a of the fifth microcavity C5, the ink 340 a can be injected into the second microcavity C2 and the fifth microcavity C5 by capillary action to fill or substantially fill the second microcavity C2 and the fifth microcavity C5.

[0206] Similarly, in the third microcavity C3 (see Figure 9 ) of the side C3a (see Figure 9 ) and the sixth microcavity C6 (see Figure 9 ) on the side of C6a (see Figure 9 ) is provided between the second wavelength shifter 355 (see Figure 9 ) and the third scatterer 353 (see Figure 9 ) ink, and can be in the first micro-chamber C1 (see Figure 7 ) of the side C1a (see Figure 7 ) and the fourth microcavity C4 (see Figure 7 ) is provided between the side surfaces C4a including a first scattering body 333 (see Figure 7 ) ink.

[0207] Then, for example Figure 21 As shown in FIG, a light blocking member 380 is formed on the second insulating layer 395. A portion of the light blocking member 380 may seal an open side of each microcavity to prevent a material injected into each microcavity from flowing out of the microcavity.

[0208] Next, a third insulating layer 396 and a fourth insulating layer 397 are sequentially formed on the second insulating layer 395 to cover the light blocking member 380 , thereby manufacturing the second substrate 30 .

[0209] Then, the sealant 70 and the sealant (ie, the seal portion) 50 (see Figure 3 ) etc. and the manufactured second substrate 30 and display substrate 10 (see Figure 10 As a result, the display device 1 is manufactured.

[0210] In the display device according to the above-described embodiment, a microcavity is defined, and ink is injected into the microcavity to form a wavelength conversion pattern. Therefore, the efficiency of material use in the manufacturing process can be improved. Furthermore, because the size of each microcavity can be easily controlled by adjusting the size of the sacrificial pattern, the thickness of the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern can be easily controlled. Furthermore, because the shape of each microcavity can be easily controlled by adjusting the shape of the sacrificial pattern, the shapes of the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern can be easily controlled.

[0211] Figure 22 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 2 according to the embodiment taken along line X1-X1'. Figure 23 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 2 according to the embodiment is taken along line X2-X2'. Figure 24 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 2 according to the embodiment is taken along line X3 - X3 ′. Figure 25 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 2 according to the embodiment is taken along line X4-X4'. Figure 26 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 2 according to the embodiment is taken along line X5 - X5 ′.

[0212] Reference Figures 22 to 26 , in addition to the first substrate 10a including Figure 5 The second substrate 30 (see Figure 5 ) of all elements except the second base 310 and the light shielding pattern 221 and the second substrate 30a and the second substrate 30 (see Figure 5 ) except that it only includes the second base 310, the display device 2 according to the illustrated embodiment is different from Figure 5 Therefore, the following description of the current embodiment mainly focuses on the differences, and the description of the elements that are the same as or similar to those of the previous embodiment will be briefly given or omitted.

[0213] The first substrate 10a will now be described.

[0214] The description of the first base 110 , the description of the elements positioned between the first base 110 and the thin film encapsulation layer 170 , and the description of the thin film encapsulation layer 170 are the same as above.

[0215] The first capping layer 391a may be located on the thin film encapsulation layer 170. In some embodiments, the first capping layer 391a may be in contact with the thin film encapsulation layer 170. A more detailed description of the first capping layer 391a is provided in conjunction with the display device 1 (see FIG. Figure 5 ) of the first cover layer 391 (see Figure 5 ) are essentially the same description.

[0216] The microcavities may be located on the first capping layer 391a. For example, the first microcavity C11, the second microcavity C21, the third microcavity C31, the fourth microcavity C41, the fifth microcavity C51, and the sixth microcavity C61 may be located on the first capping layer 391a.

[0217] The first microcavity C11 may be located in the first light-emitting area LA1 and may include an open side surface C11a. The second microcavity C21 may be located in the second light-emitting area LA2 and may include an open side surface C21a. The third microcavity C31 may be located in the third light-emitting area LA3 and may include an open side surface C31a. The fourth microcavity C41 may be located in the fourth light-emitting area LA4 and may include an open side surface C41a. The fifth microcavity C51 may be located in the fifth light-emitting area LA5 and may include an open side surface C51a. The sixth microcavity C61 may be located in the sixth light-emitting area LA6 and may include an open side surface C61a.

[0218] The first microcavity C11, the second microcavity C21, the third microcavity C31, the fourth microcavity C41, the fifth microcavity C51, and the sixth microcavity C61 may be located between the first capping layer 391a and the second capping layer 393a to be described later. Figure 13 The structures shown in are basically the same or similar.

[0219] The light-transmitting pattern 330 , the first wavelength conversion pattern 340 , and the second wavelength conversion pattern 350 may be located on the first capping layer 391 a (eg, directly on the first capping layer 391 a ).

[0220] The light-transmitting pattern 330 may be located on the first capping layer 391a and may be located in the first and fourth light-emitting areas LA1 and LA4. In some embodiments, the light-transmitting pattern 330 may be located in the first and fourth microcavities C11 and C41 and may fill or substantially fill the first and fourth microcavities C11 and C41.

[0221] The first wavelength conversion pattern 340 may be located on the first capping layer 391a (e.g., directly on the first capping layer 391a) and may be located in the second light emitting area LA2 and the fifth light emitting area LA5. In some embodiments, the first wavelength conversion pattern 340 may be located in the second microcavity C21 and the fifth microcavity C51 and may fill or substantially fill the second microcavity C21 and the fifth microcavity C51.

[0222] The second wavelength conversion pattern 350 may be located on the first cover layer 391a (e.g., directly on the first cover layer 391a) and may be located in the third light emitting area LA3 and the sixth light emitting area LA6. In some embodiments, the second wavelength conversion pattern 350 may be located in the third microcavity C31 and the sixth microcavity C61 and may fill or substantially fill the third microcavity C31 and the sixth microcavity C61.

[0223] Other details of the light-transmitting pattern 330 , the first wavelength conversion pattern 340 , and the second wavelength conversion pattern 350 are the same as those described above, and thus detailed descriptions thereof are omitted.

[0224] The second cover layer 393a may be located on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350 (e.g., directly on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350). The second cover layer 393a may cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Because the description of the second cover layer 393a is similar to that of the display device 1 (see FIG. Figure 5 ) of the second cover layer 393 (see Figure 5 ) are basically the same, so a more detailed description is omitted.

[0225] The anti-color mixing member 370a can be located on the second cover layer 393a (for example, directly on the second cover layer 393a). The anti-color mixing member 370a can be located in the non-light emitting area NLA to block the transmission of light. In some embodiments, the anti-color mixing member 370a can be located between the light-transmitting pattern 330 and the first wavelength conversion pattern 340 and between the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 to prevent color mixing between adjacent (for example, adjacent) light-transmitting areas. In some embodiments, the planar structure of the anti-color mixing member 370a can be the same as Figure 15 The anti-color mixing member 370 shown in Figure 15 ) have basically the same or similar planar structures.

[0226] The first color filter 231, the second color filter 233, and the third color filter 235 may be located on the second cover layer 393a (e.g., directly on the second cover layer 393a). A portion of each of the first color filter 231, the second color filter 233, and the third color filter 235 may be located on the anti-color mixing member 370a (e.g., directly on the anti-color mixing member 370a).

[0227] The first color filter 231 may be located in the first and fourth light emitting areas LA1 and LA4 , the second color filter 233 may be located in the second and fifth light emitting areas LA2 and LA5 , and the third color filter 235 may be located in the third and sixth light emitting areas LA3 and LA6 .

[0228] In some embodiments, the first color filter 231 , the second color filter 233 , and the third color filter 235 may maintain the shape of each of the microcavities C11 to C61 .

[0229] In some embodiments, the first color filter 231 may cover a portion of the side surfaces and the top of each of the first microcavity C11 and the fourth microcavity C41, but may not cover the side surfaces C11a of the first microcavity C11 and the side surfaces C41a of the fourth microcavity C41. Furthermore, the second color filter 233 may cover a portion of the side surfaces and the top of each of the second microcavity C21 and the fifth microcavity C51, but may not cover the side surfaces C21a of the second microcavity C21 and the side surfaces C51a of the fifth microcavity C51. Furthermore, the third color filter 235 may cover a portion of the side surfaces and the top of each of the third microcavity C31 and the sixth microcavity C61, but may not cover the side surfaces C31a of the third microcavity C31 and the side surfaces C61a of the sixth microcavity C61.

[0230] Other details of the first color filter 231 , the second color filter 233 , and the third color filter 235 are the same or substantially the same as the above details.

[0231] The first insulating layer 395a may be located on the first color filter 231, the second color filter 233, and the third color filter 235 (e.g., directly on the first color filter 231, the second color filter 233, and the third color filter 235). The first insulating layer 395a may be made of an inorganic insulating material and may not cover the side surfaces C11a, C21a, C31a, C41a, C51a, or C61a of each of the microcavities C11 to C61. Other details of the first insulating layer 395a are similar to those of the display device 1 (see FIG. 1 ). Figure 5 ) of the second insulating layer 395 (see Figure 5 ) are basically the same, so their detailed description is omitted.

[0232] The light blocking member 380a may be located on the first insulating layer 395a (eg, directly on the first insulating layer 395a). The light blocking member 380a may be located in the non-emission area NLA and may overlap the light blocking area BA.

[0233] In some embodiments, Figure 11 The light shielding pattern 221 shown (see Figure 11 ), the planar shape of the light shielding member 380a may be a grid shape.

[0234] In some embodiments, a portion of the light blocking member 380a overlapping the seventh light blocking area BA7 may seal each of the microcavities C11 to C61. That is, a portion of the light blocking member 380a may cover the side surface C11a of the first microcavity C11, the side surface C21a of the second microcavity C21, the side surface C31a of the third microcavity C31, the side surface C41a of the fourth microcavity C41, the side surface C51a of the fifth microcavity C51, and the side surface C61a of the sixth microcavity C61.

[0235] A portion of the light blocking member 380 a overlapping the seventh light blocking area BA7 may be in direct contact with the light-transmitting pattern 330 , the first wavelength conversion pattern 340 , and the second wavelength conversion pattern 350 .

[0236] In some embodiments, the light blocking member 380 a may include an organic light blocking material, and may be formed by coating the organic light blocking material and exposing and developing the organic light blocking material.

[0237] A second insulating layer 396 a covering the light blocking member 380 a may be located on the first insulating layer 395 a , and a third insulating layer 397 a may be located on the second insulating layer 396 a .

[0238] The second insulating layer 396a and the third insulating layer 397a may seal the elements located thereunder. In some embodiments, the second insulating layer 396a may be made of an organic insulating material, and the third insulating layer 397a may be made of an inorganic insulating material.

[0239] The second substrate 30 a including the second base 310 may be positioned on the first substrate 10 a , and the filler 70 may be positioned between the second substrate 30 a and the first substrate 10 a .

[0240] In the current embodiment, the second substrate 30 a and the filler 70 may be omitted.

[0241] In the display device 2 according to the current embodiment, it is possible to reduce the alignment tolerance between elements located in each light-emitting area (for example, the alignment tolerance between the light-emitting element and the wavelength conversion pattern, the alignment tolerance between the pixel defining layer and the anti-color mixing component, and / or the alignment tolerance between the pixel defining layer and the shading component).

[0242] Now refer to Figures 27 to 31 The process of manufacturing the first substrate 10 a is described, and mainly focuses on the process of manufacturing the elements located on the thin film encapsulation layer 170 .

[0243] Figure 27 、 Figure 28 、 Figure 29 、 Figure 30 and Figure 31 is based on Figure 24 sectional views showing a process of manufacturing the first substrate 10a of the display device 2 according to the embodiment are based on the structure of FIG.

[0244] Reference Figures 27 to 31 as well as Figures 22 to 26 First, a first capping layer 391a is formed on the thin film encapsulation layer 170, and a sacrificial pattern SP is formed on the first capping layer 391a. Figure 3 ) A sacrificial pattern SP is formed on two adjacent light emitting regions, and a portion of the sacrificial pattern SP may be positioned in the non-light emitting region NLA. Other details of the sacrificial pattern SP may be the same as those described above. Figures 17 to 21 Details of the sacrificial patterns SP described are substantially the same or similar.

[0245] Next, a second capping layer 393a is formed on the first capping layer 391a to cover the sacrificial pattern SP, and a color mixing prevention member 370a (see FIG. 14 ) is formed on the second capping layer 393a. Figure 22 ), and then a first color filter 231, a second color filter 233 and a third color filter 235 are formed.

[0246] Next, a first insulating layer 395a is formed on the first, second, and third color filters 231, 233, and 235. The first insulating layer 395a may be formed to cover the second capping layer 393a.

[0247] Then, if Figure 28 As shown in FIG, the first insulating layer 395 a and the second capping layer 393 a in the non-light emitting area NLA are removed to expose the sacrificial pattern SP.

[0248] Then, if Figure 29 As shown in , the exposed sacrificial pattern SP is removed by supplying a material ET such as a developer or stripper solution to the exposed sacrificial pattern SP (or by using an ashing (eg, plasma ashing) process). Then, a microcavity is formed in the location where the sacrificial pattern SP is located. Figure 30 , a second microcavity C21 having an open side surface C21 a and a fifth microcavity C51 having an open side surface C51 a are shown by way of example.

[0249] When the ink is ejected into the open portion of each micro-chamber using the nozzle NZ, the ejected ink is ejected into each micro-chamber by capillary action. Figure 30 , a process of injecting ink 340 a containing the second scatterer 343 and the first wavelength shifter 345 into the second microcavity C21 and the fifth microcavity C51 is illustrated by way of example.

[0250] Then, if Figure 31 As shown in FIG, a light blocking member 380a is formed on the first insulating layer 395a. The light blocking member 380a may be formed in a grid shape in a plan view, and a portion of the light blocking member 380a may respectively seal the open side surfaces C11a to C61a of each microcavity C11 to C61.

[0251] Next, a second insulating layer 396 a and a third insulating layer 397 a are sequentially formed on the first insulating layer 395 a to cover the light blocking member 380 a , thereby manufacturing the first substrate 10 a .

[0252] The display device 2 according to the above-described embodiment can reduce the possibility of misalignment between elements, can easily control the thickness of the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern by adjusting the size of the microcavity, and can easily control the shapes of the light-transmitting pattern, the first wavelength conversion pattern, and the second wavelength conversion pattern by adjusting the shape of the sacrificial pattern.

[0253] According to the embodiment, it is possible to provide a display device having improved display quality compared to a related art display device.

[0254] However, the effects of the embodiments are not limited to the effects set forth herein. The above and other effects of the embodiments will become more apparent to those skilled in the art to which the embodiments pertain by referring to the claims.

[0255] Summarizing the specific embodiments, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the present invention. Therefore, the disclosed preferred embodiments of the invention are used in a general and descriptive sense only, and not for the purpose of limitation.

Claims

1. A color conversion substrate, comprising: A substrate comprising a first light-transmitting area and a light-shielding area surrounding the first light-transmitting area; a first color filter located on the substrate in the first light-transmitting area; a first wavelength conversion pattern, comprising a first wavelength shifter, wherein the first wavelength conversion pattern is located in a first microcavity on the first color filter; a light shielding member located on the base and in the light shielding area; a first covering layer, located on the first color filter; as well as a second cover layer, located on the first wavelength conversion pattern, wherein the first microcavity comprises an open side, wherein the first microcavity is defined between the first cover layer and the second cover layer, and The light shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity.

2. The color conversion substrate according to claim 1, wherein The light blocking member extends along a first direction, and the first light-transmitting region and the light blocking region are adjacent to each other along a second direction intersecting the first direction.

3. The color conversion substrate of claim 1 , further comprising: a first insulating layer, located on the second cover layer, wherein the first insulating layer comprises an organic insulating material; as well as a second insulating layer, located on the first insulating layer, wherein the second insulating layer comprises an inorganic insulating material; Wherein, the light shielding member is in direct contact with the first insulating layer.

4. The color conversion substrate of claim 3, further comprising: a third insulating layer, located on the second insulating layer and covering the light shielding member; as well as a fourth insulating layer, located on the third insulating layer, Wherein, the third insulating layer comprises an organic insulating material, and Wherein, the fourth insulating layer includes an inorganic insulating material.

5. A color conversion substrate, comprising: a substrate comprising a first light-transmitting region, a light-shielding region surrounding the first light-transmitting region, and a second light-transmitting region adjacent to the first light-transmitting region along a first direction, wherein the first light-transmitting region and the light-shielding region are adjacent to each other along a second direction intersecting the first direction; a first color filter located on the substrate in the first light-transmitting area; a first wavelength conversion pattern, comprising a first wavelength shifter, wherein the first wavelength conversion pattern is located in a first microcavity on the first color filter; a light shielding member located on the base and in the light shielding area; a second color filter, located on the substrate and in the second light-transmitting area; as well as a second wavelength conversion pattern located in a second microcavity on the second color filter; wherein the first microcavity comprises an open side, The light shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity, The second wavelength conversion pattern includes a second wavelength shifter, The second microcavity includes an open side, and The light blocking member is in direct contact with the second wavelength conversion pattern at the opened side of the second microcavity. 6 . The color conversion substrate of claim 5 , further comprising a color mixing prevention member between the first wavelength conversion pattern and the second wavelength conversion pattern.

7. The color conversion substrate according to claim 6, further comprising a cover layer on the first wavelength conversion pattern and the second wavelength conversion pattern. in, The color mixing prevention component is located on the cover layer.

8. The color conversion substrate according to claim 7, further comprising an insulating layer on the color mixing preventing member. in, The color mixing prevention member is located between the cover layer and the insulating layer, and The light shielding member includes a portion located on the insulating layer.

9. The color conversion substrate of claim 5, further comprising: a third light-transmitting area, located in the substrate; a third color filter, located on the substrate and in the third light-transmitting area; as well as a light-transmitting pattern located in the third microcavity on the third color filter, The third light-transmitting area is located on one side of the first light-transmitting area along the first direction and is opposite to the second light-transmitting area. Wherein, the first light-transmitting area is located between the third light-transmitting area and the second light-transmitting area. wherein the third microcavity comprises an open side, and The light shielding member is in direct contact with the light-transmitting pattern at the open side of the third microcavity.

10. The color conversion substrate of claim 9, wherein: the third color filter includes a blue colorant, any one of the first color filter and the second color filter includes a red colorant, The other of the first color filter and the second color filter includes a green colorant, and The first wavelength shifter and the second wavelength shifter include quantum dots.

11. The color conversion substrate of claim 9, wherein: The base defines a fourth light-transmitting area opposite to the first light-transmitting area, The light-shielding area is located between the fourth light-transmitting area and the first light-transmitting area. The first color filter is also located in the fourth light-transmitting area, The first wavelength conversion pattern is further located in a fourth microcavity on the first color filter in the fourth light-transmitting region. The fourth microcavity includes an open side, and The open side of the first microcavity and the open side of the fourth microcavity face each other.

12. A display device, comprising: A first substrate including a first light-emitting area, a second light-emitting area, and a non-light-emitting area surrounding the first light-emitting area and the second light-emitting area; a first anode, located on the first substrate and in the first light emitting region; a second anode, located on the first substrate and in the second light emitting region; a light-emitting layer, located on the first anode and the second anode; a cathode, located on the light-emitting layer; a filler, located on the cathode; a second substrate, located on the filler; a first color filter located on a surface of the second substrate facing the first substrate and overlapping the first light emitting region; a second color filter located on the surface of the second substrate and overlapping the second light emitting region; a first wavelength conversion pattern located in the first microcavity on the first color filter, the first wavelength conversion pattern comprising a first wavelength shifter; a second wavelength conversion pattern located in a second microcavity on the second color filter, wherein the second wavelength conversion pattern comprises a second wavelength shifter; a light shielding member located on the surface of the second substrate and overlapping the non-light emitting area; a first covering layer, located on the first color filter; as well as a second cover layer, located on the first wavelength conversion pattern, wherein the first microcavity and the second microcavity both include open sides, wherein the first microcavity is defined between the first cover layer and the second cover layer, and The light shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity, and is in direct contact with the second wavelength conversion pattern at the open side of the second microcavity.

13. The display device according to claim 12, wherein: The light emitting layer includes two or more blue light emitting layers stacked on each other.

14. The display device according to claim 13, wherein: the first color filter comprising a red colorant, The second color filter includes a green colorant, and The first wavelength shifter and the second wavelength shifter include quantum dots.

15. A display device, comprising: A first substrate including a first light-emitting area, a second light-emitting area, and a non-light-emitting area surrounding the first light-emitting area and the second light-emitting area; a first anode, located on the first substrate and in the first light emitting region; a second anode, located on the first substrate and in the second light emitting region; a light-emitting layer, located on the first anode and the second anode; a cathode, located on the light-emitting layer; a thin film encapsulation layer, located on the cathode; a first microcavity located on the thin film encapsulation layer and in the first light-emitting region; a second microcavity located on the thin film encapsulation layer and in the second light emitting region; a first wavelength conversion pattern, located in the first microcavity, the first wavelength conversion pattern comprising a first wavelength shifter; a second wavelength conversion pattern, located in the second microcavity, the second wavelength conversion pattern comprising a second wavelength shifter; a first color filter, located on the first wavelength conversion pattern; a second color filter, located on the second wavelength conversion pattern; a light shielding member located on the thin film encapsulation layer and in the non-light emitting area; as well as A first cover layer and a second cover layer are located on the thin film encapsulation layer, Wherein, the first color filter and the second color filter are located on the second cover layer, wherein the first microcavity and the second microcavity are defined between the first cover layer and the second cover layer, wherein the first microcavity and the second microcavity both include open sides, and The light shielding member is in direct contact with the first wavelength conversion pattern at the open side of the first microcavity, and is in direct contact with the second wavelength conversion pattern at the open side of the second microcavity.

16. The display device according to claim 15, further comprising a color mixing prevention member located between the first wavelength conversion pattern and the second wavelength conversion pattern and located in the non-light emitting area, wherein: Each of the first color filter and the second color filter includes a portion located on the color mixing prevention member. 17 . The display device according to claim 15 , further comprising a first insulating layer on the first color filter and the second color filter, wherein: The light blocking member includes a portion located on the first insulating layer.

18. The display device according to claim 17, further comprising: a second insulating layer, located on the first insulating layer, the second insulating layer covering the light shielding member; as well as a third insulating layer, located on the second insulating layer, Wherein, the second insulating layer comprises an organic insulating material, and Wherein, the third insulating layer includes an inorganic insulating material.

Images