Method of processing light emitting elements and system and device using the same

Abstract

A light emitting element processing method includes: distributing a plurality of light emitting element groups on a wafer into a plurality of categories, the light emitting elements of each light emitting element group including a wafer horizontal pitch and a wafer vertical pitch; transferring the light emitting elements of the same category from each wafer to a substrate; transferring the light emitting elements from each substrate of at least one category to a first stage carrier according to a first predetermined pattern, the light emitting elements on the first stage carrier having a first horizontal pitch and a first vertical pitch; and transferring the light emitting elements from the first stage carrier to a second stage carrier according to a second predetermined pattern, the light emitting elements of the second predetermined pattern having a second horizontal pitch and a second vertical pitch. The first predetermined pattern arranges two adjacent light emitting elements of the substrate arranged in a first direction to be placed at non-adjacent positions in the first direction on the first stage carrier.

Description

TECHNICAL FIELD

[0001] The present invention relates to a method of processing light emitting elements, including, for example, light emitting diodes (LEDs) and laser diodes (LDs), and particularly to a method of processing light emitting elements based on at least one predetermined pattern for adjusting the pitch of LEDs and mixing the LEDs. BACKGROUND

[0002] Displays are core components of various electronic devices, such as smartphones, tablet computers, notebook computers, desktop computers, televisions, and display modules. Current display technologies range from LCDs, OLEDs, and AMOLEDs. Although the resolution of displays is constantly improving, current micro-LED technology is still in the research and development stage.

[0003] Micro light emitting diode dies fabricated by semiconductor processes are subject to significant deviations in light emission wavelength, luminous intensity, or chromaticity scale due to small variations in material formulation during fabrication. According to the present invention, mixing diode dies having various emission wavelengths, luminous intensities, or various chromaticity scales is one of the effective methods for obtaining uniform distribution on a display. SUMMARY

[0004] In view of the above, one of the objects of the present invention is to provide a method of processing light emitting elements having a specific arrangement and a light emitting device using the same, which can improve the fading area or light spot. These drawbacks on a display are usually caused by deviations in the light emission wavelength, luminous intensity, or chromaticity scale of the light emitting diode dies therein.

[0005] To achieve the above object, the present application provides a method for processing light emitting elements, comprising: assigning one of a plurality of LED groups on at least one wafer to one of a plurality of categories, one LED group comprising a plurality of LED dies on the same wafer; transferring LED groups of the same category from the wafer to a substrate; transferring the LED groups on the substrate with at least one light emitting color to a first stage carrier according to a first predetermined pattern, the LED dies on the first stage carrier having a first horizontal pitch and a first vertical pitch; and transferring the LED dies on the first stage carrier with at least one light emitting color to a second stage carrier according to a second predetermined pattern, the LED dies on the second stage carrier having a second horizontal pitch and a second vertical pitch. The first predetermined pattern is used to arrange two adjacent LED dies on the substrate in a first direction, and the two adjacent LED dies are placed in two non-adjacent positions in the first direction on the first stage carrier.

[0006] In one embodiment, the first predetermined pattern comprises a selection pattern of the light emitting elements on the first stage carrier in a two-dimensional matrix. The light emitting elements on the first stage carrier can be divided into a plurality of light emitting element units, each light emitting element unit being in the form of a two-dimensional sub-matrix, which can correspond to the second horizontal pitch and the second vertical pitch of the light emitting elements on the second stage carrier. The second predetermined pattern is used to arrange the light emitting elements on the second stage carrier in an array, which can be divided into a plurality of two-dimensional sub-arrays, the arrangement of each two-dimensional sub-array (on the second stage carrier) corresponding to the position of a two-dimensional sub-matrix (on the first stage carrier). The number of light emitting element units in each two-dimensional matrix is a multiple of the number of first stage carriers providing the light emitting elements to be transferred, and the light emitting elements in the light emitting element units are used to be transferred to the second stage carrier.

[0007] In one embodiment, if the number of light emitting elements of each category of the same light emitting color in one matrix is greater than 20% of the maximum number of light emitting elements of each category in each matrix, the number of light emitting elements of other categories of the same light emitting color must be lower than the maximum number within a quantity deviation.

[0008] In one embodiment, the first predetermined number order of a plurality of light emitting elements of each category of the same light emitting color in a first matrix is the same as the second predetermined number order of a plurality of light emitting elements of each category of the same light emitting color in a second matrix. When the first number of a plurality of light emitting elements of a specific category of the same light emitting color in the first matrix is within a quantity deviation of the second number of a plurality of light emitting elements of the same specific category of the same light emitting color in the second matrix, the same light emitting color of the first matrix and the second matrix is considered to have the same predetermined number order.

[0009] In one embodiment, each LED die on a wafer has a horizontal wafer pitch and a vertical wafer pitch, the LED dies on the first stage carrier have a first horizontal pitch and a first vertical pitch, and the LED dies on the second stage carrier have a second horizontal pitch and a second vertical pitch. The horizontal wafer pitch is smaller than the first horizontal pitch or the second horizontal pitch; or the vertical wafer pitch is smaller than the first vertical pitch or the second vertical pitch.

[0010] In a second embodiment, the at least one category includes a first category and a second category. Alternatively, the at least one category includes more than two categories.

[0011] In a third embodiment, the present application provides a method for processing light emitting elements, the method comprising: selecting a plurality of pre-mixed LED dies having a plurality of light emission colors, each pre-mixed LED die being located on a first stage carrier; and placing the pre-mixed LED dies having the light emission colors on a second stage carrier according to a predetermined pattern. The predetermined pattern arranges the first stage carriers of the light emission colors in a first direction such that two adjacent pre-mixed LED dies on the first stage carriers are placed at two non-adjacent positions in the first direction on the second stage carrier.

[0012] In a fourth embodiment, the present application provides a LED supply carrier (e.g., a first or second stage carrier) comprising: at least one carrier; and a plurality of LED dies on the carrier. The plurality of LED dies are assigned to a plurality of groups of diodes, each group of diodes being assigned to a two-dimensional matrix of the same size. According to the present application, more than 60% of the square matrices of the two-dimensional matrix on the carrier are divergent. Each divergent matrix has a difference between a maximum value and a minimum value of a category of LED dies having the same light emission color in the corresponding square matrix that is greater than 50% of a difference between a maximum value and a minimum value of the category of LED dies having the same light emission color on the carrier.

[0013] In a fifth embodiment, the present application provides a light emitting diode supply carrier (e.g., a first or second stage carrier) comprising: at least one carrier; and a plurality of light emitting diode dies on the carrier, wherein more than 60% of the plurality of light emitting diode dies are divergent; and wherein a divergent index of the divergent light emitting diode dies is greater than a reference value. The divergent index is calculated by dividing a sum of |CS-CC| by N, wherein the sum of |CS-CC| is a sum of all absolute values resulting from a difference between a value of a category (CC) of the divergent light emitting diode die and a value of a category (CS) of one of a plurality of light emitting diode dies in a vicinity of the divergent light emitting diode die, the plurality of light emitting diode dies in the vicinity having a same emission color as the divergent light emitting diode die, and N is a number of the plurality of light emitting diode dies in the vicinity.

[0014] In a sixth embodiment, the present application provides a light emitting element device comprising: a carrier (e.g., a first or second stage carrier) comprising a circuit; and a plurality of light emitting diode dies disposed on the carrier and electrically coupled to the circuit to control emission of light from the light emitting diode dies, wherein the light emitting diode dies are divided into a plurality of groups of diodes, each group of diodes being assigned to a two-dimensional matrix having a same matrix size, and wherein more than 60% of the plurality of two-dimensional matrices are divergent. According to the present application, a difference between a maximum value and a minimum value of a category of the light emitting diode dies having a same emission color in each divergent matrix is greater than 50% of a difference between a maximum value and a minimum value of the category of the light emitting diode dies having the same emission color on the carrier.

[0015] In a seventh embodiment, the present application provides a light emitting element device comprising: a carrier (e.g., a first or second stage carrier) comprising a circuit; and a plurality of light emitting diode dies disposed on the carrier and electrically coupled to the circuit to control emission of light from the light emitting diode dies, wherein more than 60% of the plurality of light emitting diode dies are divergent. According to the present application, a divergent index of the divergent light emitting diode dies is greater than a reference value. The divergent index is calculated by dividing a sum of |CS-CC| by N, wherein the sum of |CS-CC| is a sum of all absolute values resulting from a difference between a value of a category (CC) of the divergent light emitting diode die and a value of a category (CS) of one of a plurality of light emitting diode dies in a vicinity of the divergent light emitting diode die, the plurality of light emitting diode dies in the vicinity having a same emission color as the divergent light emitting diode die, and N is a number of the plurality of light emitting diode dies in the vicinity.

[0016] In an eighth embodiment, the present application provides a method for processing light emitting elements, the method comprising: providing a plurality of carriers; selecting one of the plurality of carriers; selecting at least one group of diodes from a first wafer having a first light emitting color to a substrate, and selecting adjacent light emitting diode dies from the group of diodes on the substrate to be placed in the selected one of the carriers in sequence; selecting at least one group of diodes from a second wafer having a second light emitting color (e.g., placing the group of diodes on another substrate), and selecting light emitting diode dies from the group of diodes on the second wafer to be placed in the selected carriers in sequence, wherein the light emitting diode dies of the second light emitting color are adjacent to the light emitting diode dies of the first light emitting color on the selected carriers; and when all of the carriers have been filled with the light emitting diode dies, placing the carriers on a light emitting element device in a predetermined pattern. The predetermined pattern arranges one carrier and a next carrier to be placed on two non-adjacent locations on the light emitting element device according to the order in which the light emitting diode dies are placed on the carriers.

[0017] In a ninth embodiment, the present application provides a method for processing light emitting elements, the method comprising: providing a plurality of carriers; selecting a group of diodes from a first wafer having a first light emitting color to a substrate, and selecting adjacent light emitting diode dies from the substrate to be placed in different carriers in sequence; selecting a group of diodes from a second wafer having a second light emitting color to another substrate, and selecting light emitting diode dies from the another substrate to be placed in the different carriers in sequence, respectively, wherein the light emitting diode dies of the second light emitting color are adjacent to the light emitting diode dies of the first light emitting color, respectively. When all of the carriers have been filled with the light emitting diode dies, placing the carriers on a light emitting element device in a predetermined pattern. The predetermined pattern arranges one carrier and a next carrier to be placed on two non-adjacent locations on the light emitting element device according to the order in which the light emitting diode dies are transferred from the wafer on the wafer.

[0018] In a tenth embodiment, the present application provides a method for processing light emitting elements, the method comprising: providing a plurality of carriers; selecting a first group of diode clusters and a second group of diode clusters from a first wafer having a first light emission color and placing the first and second groups of diode clusters on a substrate, and selecting light emitting diode dies from the first and second groups of diode clusters on the substrate and placing the light emitting diode dies on different carriers, respectively, wherein a percentage of the light emitting diode dies from the first and second groups of diode clusters are placed on at least one same carrier; selecting a third group of LEDs from a second wafer having a second light emission color and placing the third group of LEDs on another substrate, and selecting light emitting diode dies from the another substrate and placing the light emitting diode dies on different carriers, respectively, the light emitting diode dies of the second light emission color being adjacent to the light emitting diode dies of the first light emission color on the carriers, respectively. When all the carriers are loaded with the light emitting diode dies, the plurality of carriers are placed on a light emitting element device according to a predetermined pattern, the predetermined pattern arranging a carrier and a next carrier to be placed on two non-adjacent positions on the light emitting element device according to an order of transferring the light emitting diode dies from the wafers.

[0019] In a eleventh embodiment, the present application provides a method for processing light emitting elements, the method comprising: assigning a plurality of light emitting diode dies on two first color light wafers of a first category and a plurality of light emitting diode dies on two second color light wafers of a second category; selecting two groups of diodes of the first category from the two first color light wafers respectively; placing the two groups of diodes of the first category on two first color light carriers respectively in sequence (or, selecting light emitting diode dies from one group of diodes of the first category in sequence, placing the plurality of light emitting diode dies of the group of diodes of the first category in sequence on a first color light carrier, selecting light emitting diode dies from another group of diodes of the first category in sequence, and placing the plurality of light emitting diode dies on the first color light carrier in sequence); selecting two groups of diodes of the second category from the two second color light wafers respectively; placing the two groups of diodes of the second category on two second color light carriers respectively in sequence (or, selecting light emitting diode dies from one group of diodes of the second category in sequence, placing the plurality of light emitting diode dies of the group of diodes of the second category in sequence on a second color light carrier, selecting light emitting diode dies from another group of diodes of the second category in sequence, and placing the plurality of light emitting diode dies on the second color light carrier in sequence); selecting a plurality of groups of light emitting diode dies from the first color and second color light carriers in sequence, each group comprising two light emitting diode dies of the first category and two light emitting diode dies of the second category, the light emitting diode dies of the second category being adjacent to the light emitting diode dies of the first category respectively; and placing the plurality of groups of light emitting diode dies on a plurality of pixel carriers respectively, wherein the pixel carriers are placed on a light emitting element device according to a predetermined pattern, the predetermined pattern arranging a pixel carrier and a next pixel carrier according to the order in which the light emitting diode dies are placed on the pixel carriers, so as to be placed at two non-adjacent positions on the light emitting element device. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figures 1-3 An operation schematic diagram of a method for processing light emitting elements according to the first embodiment of the present application is shown.

[0021] Figures 4-5 An operation schematic diagram of selection of the direction of selection of light emitting diode dies according to the present application is shown.

[0022] Figure 6 A flowchart of a transfer printing process according to the present application is shown.

[0023] Figure 7 A flowchart of an embodiment of a direct release layer method according to the present application is shown.

[0024] Figures 8 to 23 An operation schematic diagram of an embodiment of changing pitch and mixing dies according to the present application is shown.

[0025] Figures 24 to 35 A schematic diagram illustrating operation is shown in another embodiment of the pitch-changing and hybrid mold process according to the present invention.

[0026] Figures 36-1 to 36-11 A schematic diagram illustrating the options for the unit mapping table according to the present invention is shown.

[0027] Figures 37 to 37-2 A schematic diagram illustrating two flowcharts of hybrid light-emitting diode chips based on a unit mapping table in two embodiments of the present invention.

[0028] Figures 38 to 39-4 A schematic diagram illustrating the number distribution of light-emitting diode chips according to the present invention is shown.

[0029] Figures 39-5 to 39-7 A schematic diagram illustrating the number distribution of light-emitting diode chips in the prior art.

[0030] Figures 40 to 44 A schematic diagram illustrating the operation of a method for processing a light-emitting element according to a second embodiment of the present invention is shown.

[0031] Figures 45 to 46-1 A schematic diagram illustrating the options for category combinations according to the present invention.

[0032] Figure 47 A flowchart illustrating an embodiment of the direct release layer method according to the present invention is shown.

[0033] Figure 48 and Figure 49 A schematic diagram illustrating a method for processing a light-emitting element according to a third embodiment of the present invention is shown.

[0034] Figure 50 and Figure 51 A schematic diagram of a light-emitting diode supply carrier according to a fourth embodiment of the present invention is shown.

[0035] Figure 52 and Figure 53 A schematic diagram of a light-emitting diode supply carrier according to a fifth embodiment of the present invention is shown.

[0036] Figure 54 and Figure 55 A schematic diagram illustrating the method of processing the light-emitting element according to the sixth and seventh embodiments of the present invention is shown.

[0037] Figures 56-60 A schematic diagram illustrating a method for processing a light-emitting diode die according to the eighth embodiment of the present invention is shown.

[0038] Figures 61 to 65 A schematic diagram illustrating a method for processing light-emitting diode chips according to the ninth embodiment of the present invention is shown.

[0039] Figures 66 to 70 A schematic diagram illustrating a method of processing light emitting diode dies according to a tenth embodiment of the present disclosure.

[0040] Figures 71 to 78 A schematic diagram illustrating a method of processing light emitting diode dies according to an eleventh embodiment of the present disclosure.

[0041] Figures 79 to 81 A schematic diagram illustrating a method of processing light emitting diode dies according to a twelfth embodiment of the present disclosure.

[0042] Symbol explanation

[0043] 1-16: Light emitting diode dies

[0044] (1,1), (1,2), (1,A), (1,A+1): Diode groups

[0045] A, B, C, D: Matrices

[0046] B1, B2, B3, B11, B12, B13, B21, B22, B23, B31, B32, B33, B34, B35, B36: Substrates

[0047] C1, C2, C3, C4, C5, C6, C7, C8: Categories

[0048] M, N: Numbers of rows and columns

[0049] PA, PB: Pitches

[0050] R1, R2: Ratios

[0051] S11, S12, S21-S24, S31-S34, S41-S45, S51-S56, S61-S64: Steps

[0052] T1,1, T1,2, T1,3, T1,L: First stage carriers

[0053] T2,1: Second stage carrier

[0054] Tp1, Tp2, Tp3: Pixel carriers

[0055] Tr1,1, Tr1,2: First light-out-color carriers

[0056] Tr2,1, Tr2,2: Second light-out-color carriers

[0057] Tr3,1, Tr3,2: Third light-out-color carriers

[0058] Tr1, Tr2, Tr3: Carriers

[0059] W1, W2, W4, W5, Wf, Ws, Wt, Wf1, Wf2, Ws1, Ws2, Wt1, Wt2: wafer

[0060] X, Y: axial direction DETAILED DESCRIPTION

[0061] The purposes, technical details, features and effects of the present application will be better understood by referring to the following embodiments, which are described in detail, and referring to the accompanying drawings.

[0062] The present application provides a processing method for multi-stage hybrid light emitting elements. In the specification, the term "light emitting diode die" represents one example of a light emitting element taken from a wafer. For example, when applied to a laser light emitting diode die, the "light emitting diode die" in the embodiments can represent a "laser light emitting diode die". Similarly, when applied to a laser light emitting diode die, the term "diode group" can represent a "laser light emitting diode group", and the term "diode unit" can represent a "laser light emitting diode unit". In addition, the term "first stage carrier" represents a substrate, a carrier, or a container that holds the light emitting diode die taken from the wafer. The term "second stage carrier" represents a next substrate, a next carrier, or a next container that holds the hybrid light emitting diode die from the first stage carrier. The term "first predetermined pattern" represents a transfer pattern for selecting the light emitting diode die from the substrate (or wafer) to be transferred to the first stage carrier. The term "second predetermined pattern" represents a next transfer pattern for selecting the light emitting diode die from the first stage carrier to be transferred to the second stage carrier. The term "light emitting diode supply carrier" represents a carrying tool for providing the light emitting diode die to a user. The terms "first direction" and "second direction" are two reference directions for assisting in explaining the pick-and-place of the light emitting diode die. The term "diode group" represents a group of selected light emitting diode dies on the wafer, substrate, or carrier. The term "light emitting element device" is a device, such as a display. The substrate, carrier, and container can be a blue tape, a glass fiber substrate, a BT resin (Bismaleimide Triazine Resin) substrate, an epoxy substrate, a phenol resin substrate, or a PCB substrate. In the present application, the materials of the substrate, the first stage carrier, and the second stage carrier can not be limited to the same material. The user can determine the applied material according to the requirements.

[0063] In the present invention, the transfer of LED dies between different transport elements (e.g. carriers, modules and substrates) can be performed by a transfer tool. The transfer tool can selectively comprise a selection member for selecting LED dies, a laser device for improving or forming an adhesive layer, or the above-mentioned carriers for accommodating LED dies. In addition, the transfer tool can also have a tip, a clip, a robotic transport device, a needle ejector or a wafer carrier for moving a wafer.

[0064] [First embodiment]

[0065] With reference to Figure 1 , Figure 2 and Figure 3 , the present invention provides a method for processing LED dies, which comprises a two-stage mixing of LED dies from wafers. The method comprises: assigning one of a plurality of categories to a plurality of LED die groups on at least one wafer, each LED die group comprising LED dies of the same wafer and of the same emission color (e.g. LED die groups (1,1), (1,2), (1,A) and (1,A+1) on wafer W1 in Figure 1 and wafer W2 in Figure 2 , each LED die group belonging to the same category; transferring LED die groups of the same category (e.g. LED die groups (1,1), (1,2), (1,A) and (1,A+1)) from the same wafer to the same substrate (LED die groups (1,1), (1,2), (1,A) and (1,A+1) from wafer W1 to substrate S1); transferring LED die groups (each LED die group comprising a plurality of LED dies) from more than one substrate (e.g. substrates S1 and S2 in Figure 1 and Figure 2 ) to the same first stage carrier (e.g. T1,1) according to a first predetermined pattern; Figure 1 and Figure 2 , according to the first predetermined pattern, arranging two adjacent LED die groups on substrates S1 and S2 in a first direction on two non-adjacent positions of the first stage carrier (T1,1) in a first direction (in practice, the first direction can be different from the direction shown in the figure); and according to a second predetermined pattern, transferring a plurality of LED dies (the LED dies on the two first stage carriers T1,1 can belong to two different emission colors or the same emission color) from a plurality of first stage carriers (e.g. T1,1 and T1,2) to a second stage carrier (e.g. T2,1). In Figure 3 , a second stage carrier T2,1 is shown by way of example. In Figure 1 , Figure 2In some embodiments, the number of LED dies on each first stage carrier (T1,1) can be determined based on the design of the group on the transfer tool. For example, each group of dies can include more than 50, 100, 500, 1000, or other number. The groups are selected from a predetermined range on the wafer, and the optical properties of the LED dies in the group are similar. The optical properties can be emission wavelength, luminous intensity level, or chromaticity scale. In one embodiment, the LED dies are assigned to the same class (or, in one embodiment, the wafer groups are assigned to multiple classes by identifying the emission wavelength, luminous intensity, or chromaticity scale of the LED dies), and LED dies of the same class from different wafers are arranged on the same substrate. The substrate can be a temporary substrate, such as a blue tape, a glass fiber substrate, or other substrate. Groups 1,1 and 1,2 can be assigned to the same class. Groups transferred from wafers W1 and W2 are transferred to the same first stage carrier T1,1 and belong to the same class.

[0066] However, groups from different substrates to the same first stage carrier are not limited to the same class. In one embodiment, groups on substrates B1 and B2 can belong to different classes. LED dies of the same emission color on the first stage carrier can belong to the same class or different classes.

[0067] When the LED dies on the first stage carrier belong to different classes, a method of processing LED dies according to the present application includes assigning multiple classes to multiple groups of dies on at least one wafer; transferring groups of dies of the same class from the at least one wafer to substrates; transferring multiple LED dies from multiple substrates of at least one class of the same emission color to a first stage carrier according to a first predetermined pattern (to mix LED dies of the same emission color; or to mix LED dies of the same emission color and adjust the pitch of the LED dies); and transferring LED dies from the first stage carrier of at least one emission color to a second stage carrier according to a second predetermined pattern (to mix LED dies of different emission colors; or to mix LED dies of different emission colors and adjust the pitch of the LED dies). According to the first predetermined pattern, LED dies on the substrate in two adjacent positions in a first direction are placed in two non-adjacent positions of LED dies on the first stage carrier in the first direction.

[0068] In one embodiment, the first predetermined pattern can include a mixing of the light emitting diode dies (mixing light emitting diode dies of the same light emission color), or a pitch and mixing of the light emitting diode dies (pitching and mixing light emitting diode dies of the same light emission color). The second predetermined pattern can include another mixing of the light emitting diode dies (mixing light emitting diode dies of another light emission color), or a pitch and mixing of the light emitting diode dies of different light emission colors. These patterns are described in more detail in subsequent embodiments.

[0069] Referring to Figure 3 In each of the second stage carriers, the light emitting diode dies have a second horizontal pitch and a second vertical pitch. The second horizontal pitch is equal to or greater than the first horizontal pitch, or the second vertical pitch is equal to or greater than the first vertical pitch. The first and second horizontal pitches and the first and second vertical pitches are measured from a reference center position of the same surface of two adjacent light emitting diode dies in the horizontal and vertical directions, or two corresponding edges of two adjacent light emitting diode dies in the horizontal and vertical directions. The reference center of the adjacent light emitting diode dies can be the geometric center of the light emitting diode dies, or the geometric center of the light emitting diode dies within the light emission range. The definition of the reference center position can be determined by the user according to the implementation requirements.

[0070] Referring to Figure 1 , Figure 2 , and Figure 3 The first direction is illustrated as a horizontal direction, and the second direction is illustrated as a vertical direction. The directions illustrated in the drawings are for illustrative purposes only and do not limit the implementation of the present application. In this embodiment, the first direction and the second direction form a right angle. However, in Figure 1 , Figure 2 , and Figure 3 The directions of the first and second directions illustrated are examples. If necessary, the directions of the first and second directions can be the same. For example, the first and second directions are two horizontal, vertical, or other directions. The details of the directions are described in subsequent embodiments.

[0071] Referring to Figure 3 According to the second predetermined pattern, the light emitting diode dies of the first stage carrier at two adjacent positions in the second direction are placed at two non-adjacent positions in the second direction of the second stage carrier (e.g., T2,1).

[0072] In one embodiment, the number of wafers used to process LED dies can be determined based on the desired functionality. For example, the number of wafers can include at least 2, 3, 4, or 5. Generally, the number of wafers can be determined based on the desired uniformity of the LED dies on the carrier. For example, LED dies from more wafers can provide more options for light wavelengths, light intensities, or color indices, as well as a more uniform distribution of LED dies on the carrier. The light wavelength can be a peak wavelength or a dominant wavelength of the light.

[0073] Referring to Figure 4 and Figure 5 a horizontal direction, a vertical direction, a positive slope diagonal direction, and a negative slope diagonal direction, and arrangements of LED dies on a wafer, substrate, or carrier are illustrated. For example, the positive and negative slope diagonal directions can refer to two directions that are diagonally aligned in an array of LED dies (e.g., the positive and negative slope diagonal directions can be diagonal directions that are aligned with the diagonal of the array of LED dies). In one embodiment, the first and second directions are selected from the group consisting of the horizontal direction, the vertical direction, the positive slope diagonal direction, and the negative slope diagonal direction. In one embodiment, the first and second directions are the positive slope diagonal direction and the respective negative slope diagonal direction. In one embodiment, the first and second directions can be the positive slope diagonal direction and the horizontal direction. Figure 43 In another embodiment, the first and second directions are selected from the group consisting of the horizontal direction, the vertical direction, the positive slope diagonal direction, and the negative slope diagonal direction. In one embodiment, the first and second directions are the positive slope diagonal direction and the respective negative slope diagonal direction. In one embodiment, the first and second directions can be the positive slope diagonal direction and the horizontal direction.

[0074] In one embodiment, the first direction (or the second direction) can not be limited to any one of the directions illustrated in the figures, but can be a combination of two directions that are not parallel to each other. Alternatively, the first direction (or the second direction) can be selected from at least one of the group consisting of the horizontal direction, the vertical direction, the positive slope diagonal direction, and the negative slope diagonal direction. For example, the first and second directions can be a combination of the horizontal direction and a combination of the vertical direction, the positive slope diagonal direction, and the negative slope diagonal direction, or the like. For example, the first and second directions can have an angle therebetween.

[0075] In one embodiment, the first and second directions form a right angle. For example, the first and second directions can be the horizontal direction and the vertical direction, or the first and second directions can be the positive slope diagonal direction and the negative slope diagonal direction. In one embodiment, the first and second directions are the same direction. For example, the first and second directions can be the horizontal direction, or the first and second directions can be the vertical direction.

[0076] In a first embodiment, a plurality of diode groups is placed on each first stage carrier by a transfer printing process. Referring to Figure 6 , the transfer printing process comprises: selecting light emitting diode dies on a portion of a substrate by adhesion of an adhesive layer in a transfer tool (S11); and placing (or releasing) the selected light emitting diode dies on the first stage carrier by forming distributed bumps in corresponding locations on the adhesive layer (S12).

[0077] In an embodiment, the light emitting diode dies are placed from a plurality of first stage carriers on each second stage carrier by a direct release layer method. Referring to Figure 7 In an embodiment, the process comprises: forming an adhesive layer of light emitting diode dies on the first stage carrier (S21); defining the light emitting diode dies on the first stage carrier as a plurality of diode units separated thereon, each diode unit having a first direction dimension corresponding to the second horizontal pitch and a second direction dimension corresponding to the second vertical pitch, and selecting the light emitting diode dies on the first stage carrier by the adhesive layer (S22); creating contacts between the diode dies and the second stage carrier according to a first predetermined pattern (S23); and placing the selected diode dies on the second stage carrier from the adhesive layer by weakening the adhesive layer at locations on the adhesive layer corresponding to the selected diode dies in the diode units by exposure to light (S24).

[0078] Referring to Figure 3 , the second predetermined pattern places two non-adjacent ones of the two adjacent light emitting diode dies on the second stage carrier (T2,1) in the second direction. However, the second predetermined pattern is not limited to the embodiment shown in Figure 3 .

[0079] An example of the second predetermined pattern in conjunction with the first predetermined pattern and the light emitting diode die transfer step is described as follows. Referring to Figure 8 , the light emitting diode dies assigned on each first stage carrier (T1,1, T1,2,... T1,L) according to the first predetermined pattern are assigned in a two-dimensional array form for placing the light emitting diode dies on the second stage carrier according to the second predetermined pattern. According to Figure 8 , the second predetermined pattern takes a two-dimensional sub-array form. The two-dimensional sub-array is used to sequentially arrange the light emitting diode dies thereon to each second stage carrier. The second predetermined pattern comprises a selection pattern and a placement pattern, the selection pattern arranging the selection of the light emitting diode dies in an (M x N) two-dimensional matrix form. The (M x N) two-dimensional matrix can be divided into (L x L) diode units. In Figure 8, M = L x R1, N = L x R2. Each diode unit is arranged in the form of a (R1 x R2) two-dimensional secondary matrix of LED dies. The placement pattern divides the LED dies from the first stage carrier into (L x R1 x R2) two-dimensional sub-arrays of (L x L) LED dies in the second stage carrier. The number of two-dimensional sub-arrays is the product of L (e.g. 3), R1 (e.g. 4), and R2 (e.g. 3), which equals 36. Importantly, the integers R1 and R2 are determined according to the second horizontal and vertical pitches. The integers R1 and R2 can be independent of the integer L. In one embodiment, the plurality of diode units are incorporated into a matrix (which can also be in the form of tiles); each tile contains m x L units, where m is an integer greater than 2.

[0080] With respect to the LED die transfer process, the horizontal pitch ratio between the first and second horizontal pitches of the first and second predetermined patterns, the vertical pitch ratio between the first and second vertical pitches of the first and second predetermined patterns, and the corresponding arrangement of the LED dies of the first and second predetermined patterns are described in detail below. In the first predetermined pattern, the first horizontal pitch and the first vertical pitch between two adjacent LED dies are defined according to the horizontal and vertical directions between the centers of the corresponding reference surfaces (e.g. the centers of the LED dies) (see FIG. 2A). Figure 1 In the second predetermined pattern, the second horizontal pitch and the second vertical pitch are defined according to the horizontal and vertical directions between the reference center positions of two adjacent LED dies. The reference center position of an LED die can be the geometric center of the LED die, or the geometric center of the active area of the LED die. The user can determine the reference center position according to the implementation needs. For example, the horizontal pitch ratio between the first and second horizontal pitches can be defined but not limited to R1 (e.g. 4), and the vertical pitch ratio between the first and second vertical pitches can be defined but not limited to R2 (e.g. 3). The pitch ratio configuration can also be performed in the corresponding predetermined pattern of the LED dies. Figure 8 Above, L is the number of the first stage carrier, for example, but not limited to 3. In addition, the LED dies in the array are located in the corresponding rows and columns, which are used to represent the first predetermined pattern (see FIG. 2A). Figure 8(Middle). The array has L (e.g., 3) rows and L (e.g., 3) columns. This arrangement is used to divide multiple two-dimensional subarrays, each of which is a diode unit. Each diode unit takes the form of a two-dimensional submatrix (R1xR2, e.g., 4x3), which is the matrix in the first predetermined pattern. In the first predetermined pattern, the matrix has M columns and N rows, with the light-emitting diode chips located in the corresponding rows and columns of the matrix. For example, M is equal to LxR1 (e.g., 12), and N is equal to LxR2 (e.g., 9). On the other hand, in the second predetermined pattern, there are (LxR1xR2; e.g., 36) two-dimensional subarrays. The two-dimensional subarrays are illustrated in... Figure 8 Below. Each two-dimensional subarray has LxL (e.g., 9) blocks in L (e.g., 3) columns and L (e.g., 3) rows. LxL (e.g., 9) light-emitting diode (LED) chips are arranged in corresponding positions in the rows and columns. The second horizontal pitch is equal to a horizontal dimension of the diode cell measured in the first direction. The second vertical pitch is equal to a vertical dimension of the diode cell measured in the second direction. Furthermore, an LED chip is positioned at the upper left position in each two-dimensional subarray in a second predetermined pattern. The horizontal pitch ratio of the first horizontal pitch to the second horizontal pitch is equal to R1, and the vertical pitch ratio of the first vertical pitch to the second vertical pitch is equal to R2. The second horizontal pitch is larger than the first horizontal pitch, and the second vertical pitch is larger than the first vertical pitch, primarily to facilitate subsequent manufacturing processes on the second-stage carrier.

[0081] The die transfer process depends on how the sequence transfers the LED die from the first-stage carrier to the second-stage carrier, and on the unit-picking sequence within the unit being transferred, as described below. (Refer to...) Figure 9The unit mapping table includes L or 3 columns and L or 3 rows. The consecutive integers from 1 to L (e.g., 1 to 3) are arranged in the rows and columns of the corresponding unit mapping table. The numbers in each column are not repeated with the numbers in each row of the unit mapping table. Each row and column in the unit mapping table is mapped to a diode cell in the first predetermined pattern matrix that has the same row and column as the number in the unit mapping table. The numbers in the unit mapping table represent the mapping relationship between the diode cells in the first predetermined pattern of the first stage carrier and the positions in the second predetermined pattern of the second stage carrier, and the order relationship of placement. The light emitting diode dies of the selected diode cell are transferred to the corresponding positions in the second predetermined pattern of the second stage carrier according to the numbers in the unit mapping table. In addition, the intra-cell selection sequence is used to control the sequence of the selected diode cells from the currently selected first stage carrier to be transferred in the order of the ordered arrangement of the numbers from 1 to L (e.g., 1 to 3), followed by shifting the leading number (e.g., switching to 2 or 3) and repeating the mapped sequential placement. The numbers are initialized. Thus, the intra-cell selection sequence adopts a sequence shifting scheme. Each time the intra-cell selection sequence is shifted, the intra-cell selection sequence is rearranged, in which the leading number is appended to the end of the previous sequence, and each of the remaining numbers is sequentially moved one position forward in the intra-cell selection sequence. The numbers correspond to the corresponding numbers in the unit mapping table, in which the rows and columns are mapped to the corresponding diode cells in the matrix of the first predetermined pattern. The diode cells mapped by the numbers in the unit mapping table are selected according to the numbers in the intra-cell selection sequence.

[0082] The second predetermined pattern formed by the die transfer process is shown in Figures 9 to 13 , Figures 14 to 18 and Figures 19 to 23 , Figure 37 Another perspective flowchart of the die transfer process is shown. In Figure 37 , the die transfer process can generally include sequentially selecting one of the first stage carriers (S31), e.g., the first stage carrier (T1, 1) as shown in Figures 9 to 13 , selecting the first stage carrier (T1, 2) as shown in Figures 9 to 13 , selecting the first stage carrier (T1, 3) as shown in Figures 14 to 18 ; selecting light emitting diode dies from the diode cells in the first predetermined pattern of the selected first stage carrier according to the intra-cell selection sequence and the unit mapping table (S32), e.g., the diode cell of the first stage carrier (T1, 1) is mapped by the row and column of the number 1 in the unit mapping table and selected in the intra-cell selection sequence as shown in Figure 9 and Figure 10; in the upper left position of the corresponding two-dimensional sub-array in the second predetermined pattern, the light emitting diode dies are selected until all light emitting diode dies on the first stage carrier are arranged (S33), for example, the light emitting diode dies of the first stage carrier (T1,1) are selected according to the number 3 in the selection sequence in the unit mapping table, and then, as shown in Figure 12 With Figure 13 the corresponding array elements in the two-dimensional sub-arrays in the second predetermined pattern; and reordering the selection sequence in the unit, and continuing to select the next carrier in sequence (S34).

[0083] The foregoing steps (S31-S34) only outline the general principles of how the light emitting diode dies in the two-dimensional sub-arrays of the second predetermined pattern are arranged. The arrangement according to the foregoing die transfer process can be implemented by two embodiments. Referring to Figure 37-1 , one of the embodiments of the die transfer process includes the following steps:

[0084] Step S41: in the selection sequence in the unit, set the initial sequence number to 1 and the current carrier number to 1, and select one of the first stage carriers in sequence. As shown in Figure 9 , according to the first leading number 1 in the selection sequence in the unit, set the initial sequence number to 1, and the currently selected carrier is T1,1.

[0085] Step S42: select L diode units of the selected carrier, and map the rows and columns of the L groups of numbers in the unit mapping table. As in the second predetermined pattern, arrange in sequence the same row and column of each group of diode units corresponding to the sequentially arranged two-dimensional sub-arrays on the second stage carrier, as shown in Figures 10 to 13 . In the selected first stage carrier (T1,1), select the light emitting diode dies corresponding to the first sequence integer in the unit mapping table on different two-dimensional sub-arrays, to the second stage carrier (as shown in Figure 9 and Figure 10 ), until the (R1xR2) light emitting diode dies in the diode units corresponding to the leading number (1) in the unit mapping table are completely selected. Then, in the unit mapping table 1( Figure 11 ), the number 2 is the second sequence integer, in the selected first stage carrier (T1,1), select in sequence the light emitting diode dies corresponding to the second sequence integer in the unit mapping table, and place the pre-mixed light emitting diode dies on other two-dimensional sub-arrays on the second stage carrier, until the light emitting diode dies corresponding to the second sequence integer in the unit mapping table in the diode units are completely selected, asFigure 12 The leading digit of the cell selection sequence can be arranged to correspond to the L digits in the unit mapping table in turn. The rows and columns of the selected two-dimensional sub-array correspond to the L mapped diode cells in the matrix of the first predetermined pattern. For example, referring to Figure 12 The leading digit of the cell selection sequence can be arranged to correspond to the L digits in the unit mapping table in turn. The rows and columns of the selected two-dimensional sub-array correspond to the L mapped diode cells in the matrix of the first predetermined pattern. For example, referring to Figure 13 The leading digit of the cell selection sequence can be arranged to correspond to the L digits in the unit mapping table in turn. The rows and columns of the selected two-dimensional sub-array correspond to the L mapped diode cells in the matrix of the first predetermined pattern. For example, referring to

[0086] Step S43: Rearrange the cell selection sequence to generate a new leading digit, and move each of the remaining digits in the cell selection sequence by one digit in sequence. For example, the cell selection sequence is initialized as (1, 2, 3) at the first arrangement, and then as (2, 3, 1), as shown in Figure 14 .

[0087] Step S44: Increase the current carrier in sequence by one, and prepare to select the next carrier of the first stage carrier, as shown in Figure 14 and Figure 19 .

[0088] Step S45: Reinitialize the cell selection sequence, and rearrange the leading digit and the other subsequent digits in sequence, and move each digit in the cell selection sequence by one position in sequence until the leading digit in the cell selection sequence is equal to the current carrier number, and return to step S41.

[0089] The present embodiment of the die transfer process emphasizes the transfer of all the die of the diode unit according to the first predetermined pattern in the digital map to the selected first stage carriers. According to the second predetermined pattern, the same number, such as 1, 2 or 3, in the unit map table in the second stage carriers is processed in the RlxR2or 12 two-dimensional sub-arrays in the second stage carriers. According to the next number in the unit selection sequence and the same number in the unit map table, the processing is performed in the subsequent RlxR2two-dimensional sub-arrays or the 12 two-dimensional sub-arrays in the second predetermined pattern. According to the above embodiment of selecting and placing the die, the spatial relationship between the die and the first stage carriers remains the same on the substrate and on the first stage carriers. That is, the spatial relationship of any die on the substrate is substantially the same as that on the first stage carriers. For example, the adjacent die on the substrate are the consecutive die on the first stage carriers, and the spatial relationship of the die on the first stage carriers is substantially the same as that on the second stage carriers. When the selected die is at the "upper left corner" of the two-dimensional sub-matrix, the placed die is at the "upper left corner" of the two-dimensional sub-array. That is, the spatial relationship between the die in the sub-matrix (the first predetermined pattern) and the two-dimensional sub-array (the second predetermined pattern) is the same. Similarly, the spatial relationship between the die in the matrix and the array is the same.

[0090] Reference Figure 37-2 Another embodiment related to the die transfer process includes the following steps:

[0091] Step S51: Set the current carrier number to 1 and select the first stage carriers in sequence. As shown in FIG. 5, the current carrier number is set to 1 and the first stage carrier currently selected is T1,1. Figure 24

[0092] Step S52: Select L or 3 diode units in the selected carrier according to the leading number in the unit selection sequence in the corresponding unit map table and arrange the L diode units in sequence to the rows and columns of the second predetermined pattern. The rows and columns of the two-dimensional sub-array of the second stage carrier correspond to the rows and columns of the diode units in the matrix of the first predetermined pattern. As shown in FIG. 6, the L diode units in the selected carrier T1,1 are arranged to the rows and columns of the second predetermined pattern. The rows and columns of the two-dimensional sub-array of the second stage carrier correspond to the rows and columns of the diode units in the matrix of the first predetermined pattern. Figures 24 to 26 ​As shown, the L or 3 diode cells in the first predetermined pattern matrix are mapped by the row and column corresponding to the number sequence 1, 2, 3 in the unit mapping table corresponding to the leading number. The leading numbers 1, 2, 3 in the unit selection sequence in step S54 generates a periodical replacement. The L or 3 LED dies are located in the mapped diode cells, which are located in the same row and column, and the second predetermined pattern sequentially selects the 2D sub-arrays from the LxR1xR2 or 36 2D sub-arrays to place the LED dies. Unlike the previous embodiment, the present embodiment repeatedly transfers L or 3 LED dies from L or 3 respective diode cells each time, and the mapping in the unit mapping table and the unit selection sequence is performed by a common number (in the previous embodiment, the mapping in the unit mapping table and the unit selection sequence is performed by different numbers, and in the present embodiment, the mapping in the unit mapping table and the unit selection sequence is performed by the same number). From the first predetermined pattern of the selected carrier to the unit mapping table sequentially selected from the second predetermined pattern, the same number on the unit mapping table corresponding to the transferred (LxR1xR2) or 36 LED dies is not the same number according to the second predetermined pattern shown in the above embodiment.

[0093] The transmission process is described as follows. First, one carrier (T1, 1) of the first stage carrier is selected, and the first sequence integer and the second sequence integer are assigned in the unit mapping table as the first sequence integer in the unit mapping table, Figure 24 the first sequence integer in the unit mapping table = 1, and the second sequence integer in the unit mapping table = 2. Then, the LED dies corresponding to the first sequence integer in the unit mapping table are selected from the diode cells, and the LED dies are placed on the row and column corresponding to the first sequence integer on the 2D sub-array, as shown in Figure 24 Then, the LED dies corresponding to the second sequence integer in the unit mapping table are selected from the diode cells in the matrix, and the LED dies are placed on the row and column corresponding to the second sequence integer in another 2D sub-array, as shown in Figure 25 The above operation is continued until the (R1xR2) premixed LED dies corresponding to the first sequence integer and the second sequence integer in the unit mapping table in the diode cells have been completely selected. The above steps are repeated for the next sequence integer, as shown in Figure 26 , Figure 27

[0094] Step S53: Determine whether all the LED dies of the selected first stage carrier have been completely arranged to the second stage carrier. When there are no LED dies in the selected first stage carrier, the present step will terminate the repeated die transfer in step S52.

[0095] ​Step S54: When all the LED dies of the selected carrier are not completely arranged, the number in the unit picking sequence is repeatedly switched with the leading number, and the remaining relevant numbers are sequentially processed. A number in the unit picking sequence is switched, and then the step S52 is resumed. The present step is mainly to repeatedly shift the number in the unit picking sequence once when the LED dies of the selected carrier are not completely arranged to the second stage carrier.

[0096] Step S55: The current carrier number is incremented by one number, as shown in Figure 28

[0097] Step S56: The unit picking sequence is reinitialized and the leading number of the unit picking sequence to be processed subsequently and each remaining sequence number in the unit picking sequence are moved one position sequence, until the leading number in the unit picking sequence is equal to the current carrier number, wherein the reordering of the leading number follows the number of the leading carrier beside some unit picking sequence, and the step S51 is resumed to repeat the above steps, as shown in Figures 29 to 35

[0098] The present embodiment is related to the process of die transfer, emphasizing the transfer of LxL or 9 LED dies of a diode unit mapped by L or 3 different numbers in the unit mapping table and arranged in each subsequent L or 3 two-dimensional subarray in the second predetermined pattern in a repetitive operation manner. In addition, the unit mapping can also be adjusted. Refer to Figures 36-1 to 36-3 , which shows other unit mapping tables according to the present application.

[0099] In the above embodiments, the different first stage carriers (T1,1, T1,2, and T1,3) can belong to the same category, different categories with the same light emission color, or different light emission colors.

[0100] According to one aspect of the present application, the LED dies with the same light emission color, while the LED dies on the second stage carrier can belong to different categories with the same light emission color, for example, four categories. Refer to Figure 38 , in which the LED dies in a matrix can have different light emission colors, and the number of LED dies of different categories with the same light emission color on the second stage carrier is substantially equal (the number of LED dies allocated to each category is the same). The LED dies will be divided into a plurality of two-dimensional matrices, which have the same matrix size. Refer to Figure 39-1 , the selected number of LED dies allocated to each category is substantially based on the respective predetermined category ratio, and the respective predetermined category ratio is the same. Therefore, the actual number of LED dies allocated to each category is close to each other. Refer to Figure 39-1 ​​, each class of the same light emission color in the matrix (or in one matrix) has a quantity distribution curve, which is composed of the quantity of the light emitting diode dies corresponding to each class in the matrix (X axis is class, Y axis is quantity). In the present embodiment, the matrix has a quantity distribution curve, which has a quantity deviation from the expected quantity less than 5%, 10%, 15%, or 20% (as desired), and the matrix is a conformed matrix according to the present feature. In addition, according to the mixing process of the present application, the quantity of the conformed matrix is greater than a threshold ratio of the quantity of all the matrices on the carrier in the second stage. In one embodiment, the threshold ratio can be 5%, 10%, 30%, 40%, 50%, 80%, or other ratios. The quantity deviation described above, for example, in the same matrix, one class of light emitting diode dies has the maximum quantity, and another class of light emitting diode dies has the minimum quantity, and the ratio of the maximum quantity to the minimum quantity is greater than a threshold ratio; the difference between the ratio of one class of light emitting diode dies to the total quantity of light emitting diode dies in the matrix and the ratio of another class of light emitting diode dies to the total quantity of light emitting diode dies in the matrix; or the difference between the quantity of one class of light emitting diode dies and the quantity of an adjacent class of light emitting diode dies in the same matrix. The user can determine the definition and operation of the ratio as desired.

[0101] Figure 39-2 is Figure 39-1 An example of the fine distribution. Each class of the same light emission color is divided into multiple sub-classes, and the quantity distribution curve is provided to show the quantity of light emitting diode dies corresponding to each sub-class. In one class, the quantity distribution curve in the matrix is not a natural (Gaussian) distribution curve. However, the degree of uniform mixing of the light emitting diode dies on the carrier cannot be determined only by the difference in the quantity of light emitting diode dies between different classes in the matrix. That is, according to the quantity distribution of the light emitting diode dies in the same class, the degree of uniform mixing of the light emitting diode dies on the carrier can be determined. According to the present application, the quantity distribution curve of the light emitting diode dies should not be a natural distribution curve, nor a Gaussian distribution curve (see the prior art Figure 39-5Please refer to the following explanation). The LED die quantity distribution curve can be a horizontal straight line or a step curve with multiple horizontal straight lines. In the second stage, the LED die quantity of different categories can be optionally arranged in a predetermined quantity order, or the LED die quantity of different categories can be equal to each other or have a ratio to each other. In an embodiment, if the quantity of each category of light emitting elements of the same light emitting color in a matrix is greater than 20% of the maximum quantity of light emitting elements in each category in the matrix, the quantity of each category of light emitting elements must be less than the quantity deviation of the maximum quantity.

[0102] Please refer to Figures 39-3 to 39-4 In the embodiment of "the predetermined quantity order is a ratio of different categories", the LED die quantity of different categories has a predetermined quantity priority order on the carrier (for example, the LED die quantity of category 3 > the LED die quantity of category 1 > the LED die quantity of category 2 > the LED die quantity of category 4. The LED die quantity distribution curve should not be a normal distribution curve (the quantity distribution curve does not contain a single peak). Please refer to Figures 39-5 to 39-7 In the prior art, the quantity distribution of LED dies is a normal distribution curve, and the prior art LED die mixture has a long tail phenomenon without the category selection process of the present application. The LED die quantity distribution curve can be a step curve. The LED dies on the carrier can be divided into multiple two-dimensional square matrices, which have the same size. When the order of the LED die quantity of different categories of the same light emitting color in the matrix is the same as the predetermined quantity order, the matrix is a matrix that meets the requirements. That is, when the mixing degree is high enough, the characteristics of the predetermined quantity order are maintained in the matrix. According to the present application, the proportion of the matrix that meets the requirements on the carrier to all matrices on the carrier is greater than a threshold ratio. In an embodiment, the threshold ratio is 5%, 10%, 30%, 40%, 50%, 80%, or other ratios.

[0103] In the embodiment of "the predetermined quantity order is a ratio of different categories", the present application provides another processing method of the matrix that meets the requirements. The quantity deviation between different matrices is less than 5%, 10%, 15%, or 20%. In detail, the quantity deviation between the LED die quantity of the same category in different matrices is less than 5%, 10%, 15%, or 20%.

[0104] Please refer to Figure 38If the different categories are substantially equal to each other or are in proportion to each other, in an embodiment, the assigned number of light emitting diode dies assigned to each category in the matrix is determined according to a predetermined category ratio of light emitting diode dies assigned to each category in the matrix or is based on the number of light emitting diode dies assigned to each category on the vehicle. For example, a reference matrix can have the lowest difference between the actual number and the average of the actual number assigned to each category of all matrices on the vehicle. In an embodiment, the first predetermined number ordering of the plurality of light emitting elements of each category of the same light emission color in the first matrix is the same as the second predetermined number ordering of the plurality of light emitting elements of each category of the same light emission color in the second matrix. When the first number of the plurality of light emitting elements of a particular category of the same light emission color in the first matrix is within a number deviation of the second number of the plurality of light emitting elements of the same particular category of the same light emission color in the second matrix, the first matrix and the second matrix are considered to have the same predetermined number ordering.

[0105] In an embodiment, the range of each category can be determined according to functional requirements. For example, the wavelength range of each category can be less than 2 nm (e.g., 0.1 nm, 0.5 nm, 1 nm, 2 nm, or other wavelength bands). In addition, the wavelength range of each subcategory can be less than 2 nm (e.g., 0.1 nm, 0.5 nm, 1 nm, 2 nm, or other wavelength bands). Importantly, the range of a subcategory is narrower than the range of a category, which can be determined according to the accuracy or resolution of the optical wavelength detection facility. For example, in an embodiment, the lowest wavelength limit and the highest wavelength limit of the X-axis of the number distribution graph are integers. The lowest wavelength limit is determined by the closest integer value that is greater than the minimum light emission wavelength of the light emitting diode dies in the matrix. The highest wavelength limit is determined by the closest integer value that is less than the maximum light emission wavelength of the light emitting diode dies in the matrix.

[0106] In another embodiment, the range of each category can be the light emission intensity determined by the light emission energy (Po (mW) or luminous intensity (Iv (mcd)). For example, the range of each category can be 5% to 10% of the light emission intensity, such as 8%. The percentage of light emission intensity can be defined according to the ratio of the maximum value and the minimum value of the light emission intensity.

[0107] According to one aspect, the present application provides a system for processing light emitting diode dies, comprising an optical inspection device for assigning a plurality of categories to a plurality of groups of dies on at least one wafer; a first transfer tool for transferring groups of dies of the same category from the at least one wafer to a plurality of substrates; a second transfer tool for transferring the light emitting diode dies from the plurality of substrates to a first stage carrier based on a first predetermined pattern; and a third transfer tool for transferring the light emitting diode dies from the at least one light emitting color first stage carrier to a second stage carrier based on a second predetermined pattern, the first predetermined pattern arranging two light emitting diode dies on a substrate that are adjacent in a first direction to positions of two light emitting diode dies on the first stage carrier that are not adjacent in the first direction.

[0108] In an embodiment of the system for processing light emitting diode dies, the first, second, and third transfer tools comprise a pick function for picking the light emitting diode dies from the substrates or carriers, and a place function for placing the light emitting diode dies on the substrates or carriers.

[0109] In the above first embodiment, the size of the groups of dies can be predetermined. However, the distribution of categories on different wafers is usually random. That is, the size and arrangement of the groups of dies can be flexibly adjusted to better accommodate different category distributions on different wafers. In an embodiment, after the categories of the light emitting diode dies are determined, the category information of the light emitting diode dies on the wafer can be used to analyze the optimal size of the groups of light emitting elements. The light emitting diode dies on the wafer are divided into the same groups of light emitting diode dies according to the size that the groups of dies can possibly have. This analysis can be done by a computing system or other computing device.

[0110] [Second Embodiment]

[0111] With reference to Figure 40 and Figure 41 , the present application provides a method for processing light emitting diode dies by picking light emitting diode dies of a first category and a second category from wafers. The method comprises: individually assigning a category to each light emitting diode die of a plurality of wafers (e.g., wafers W1 and W2 in Figure 40 and Figure 41 ), wherein the categories include the first category and the second category; and transferring a plurality of light emitting diode dies of the first category (the light emitting diode dies can be transferred from one carrier to the next carrier, or the light emitting diode dies can be transferred to the next carrier by configuration of a plurality of groups of dies) from the wafer W1 to a substrate B1, and from the wafer W2 to a substrate B2. Light emitting diode dies having the same optical property, such as the same light emitting wavelength or the same light emitting intensity, on the same wafer are transferred to the same substrate on the same wafer. In Figure 40 and Figure 41In the first embodiment, the first predetermined pattern arranges two adjacent first category LED dies on each substrate (B1 or B2) in the first direction, and places the LED dies in two non-adjacent positions in the first direction on the first carrier. The LED dies on each wafer (W1 or W2) have a horizontal wafer pitch and a vertical wafer pitch, and the LED dies on the first carrier have a first horizontal pitch and a first vertical pitch. The second horizontal pitch of the LED dies on the second carrier is greater than the first horizontal pitch, and the second vertical pitch of the LED dies on the second carrier is greater than the first vertical pitch.

[0112] In the second embodiment, the LED dies on the first carrier belong to a first category; that is, the LED dies on the same first carrier have the same category. The category of each LED die can be selected from one or more of the following: an emission wavelength, an emission intensity, and a color index.

[0113] The number of wafers in the above embodiments can be determined according to the application; for example, at least two, three, four, or five wafers.

[0114] Please refer to Figure 42 and Figure 43 The method further includes: transferring a plurality of LED dies of a second category from a wafer (e.g., wafer W1) to a substrate (B3); transferring the LED dies from the substrate (B3) to a second carrier of the first carrier according to a first predetermined pattern; and transferring the LED dies from the LED dies of the first category on the first carrier, and the LED dies of the second category on the first carrier, to the second carrier according to a second predetermined pattern. Figure 42 In the first embodiment, the first predetermined pattern arranges two adjacent first category LED dies on each substrate (B1 or B2) in the first direction, and places the LED dies in two non-adjacent positions in the first direction on the first carrier. The LED dies on each wafer (W1 or W2) have a horizontal wafer pitch and a vertical wafer pitch, and the LED dies on the first carrier have a first horizontal pitch and a first vertical pitch. The second horizontal pitch of the LED dies on the second carrier is greater than the first horizontal pitch, and the second vertical pitch of the LED dies on the second carrier is greater than the first vertical pitch. Figure 43 In the second embodiment, the LED dies on the first carrier belong to a first category; that is, the LED dies on the same first carrier have the same category. The category of each LED die can be selected from one or more of the following: an emission wavelength, an emission intensity, and a color index.

[0115] In the second embodiment, at least one of the first and second predetermined patterns can be formed according to a positioning sequence, wherein the positioning sequence comprises a plurality of positions selected from the locations of the LED dies in the first stage carrier and a plurality of positions for placing the LED dies on the second stage carrier. For example, according to the positioning sequence, the second predetermined pattern places the LED dies from one first stage carrier to the second stage carrier, and a mapping relationship is formed between the positions of the LED dies between the two carriers. The positioning sequence comprises a first positioning sequence and a second positioning sequence, and according to the specific sequence, the rows and columns for mapping the placement of the LED dies on the first and second stage carriers are determined. The first and second positioning sequences are positioning sequences applied in different directions. For example, the horizontal and vertical directions (for example, the X direction in the horizontal direction and the Y direction in the vertical direction) or the positive and negative diagonal directions. For example, when the first element in the first positioning sequence and the first element in the second positioning sequence are also 1, the positions of the first elements in the first and second positioning sequences correspond to (1, 1). The first LED die on the first stage carrier is mapped to the position (1, 1) on the second stage carrier. From the first positioning sequence (or the second positioning sequence), a variety of offsets (or the number of LED dies in the interval) between the interval of the LED dies from one LED die to the next LED die can be selected. The offset between the elements selected from the first and second positioning sequences is selected from the offsets in the group. The interval between the LED dies placed in one and the next represents the number of LED dies accommodated. From one perspective, the elements selected by the first and second positioning sequences are randomly selected from a group of mapping positions of the LED dies. For example, a group of randomly selected offsets includes -3, -1, 2, 3, and 4. According to the random selection, the offsets selected from the group of the first positioning sequence are 2, -1, 4, 3, 2, and -1 in turn, and the offsets selected from the group of the second positioning sequence are 4, 2, 3, 1, 2, and 3 in turn. Therefore, the positions of the LED dies placed in the horizontal direction are 3, 2, 6, 9, 11, and 10 in turn, and the positions of the LED dies placed in the vertical direction are 5, 7, 10, 9, 11, and 14 in turn. In short, the positions of the LED dies placed are (3, 5), (2, 7), (6, 10), (9, 9), (11, 11), and (10, 14) in turn (the two numbers represent the horizontal direction position and the vertical direction position, respectively). Please refer to the top view in Figure 44 , which illustrates the result of the mixing of the LED dies according to the positioning sequence described above. In Figure 44 , the LED dies are shown in several gray scales, which correspond to different categories of the LED dies. As shown in Figure 44 , the LED dies are distributed in a highly mixed state. Please refer to Figure 44The partial view of the bottom, where the categories of LEDs (4 or 6 categories) are distributed evenly. If necessary, the random offset can include more numbers, such as 5, 6, 7, etc. in addition to -3, -1, 2, 3, and 4 mentioned above.

[0116] In the second embodiment, the second predetermined pattern can arrange two adjacent LED dies of the first category and two adjacent LED dies of the second category in a third direction on the first stage carrier to two non-adjacent positions on the second stage carrier. The first direction, the second direction, and the third direction can be selectively aligned with the horizontal direction, the vertical direction, the positive slope diagonal direction, or the negative slope diagonal direction (see the explanation of Figure 5 ).

[0117] Please refer to Figure 45 , the first category of LED dies belongs to the first light emitting wavelength band and the first light emitting intensity level, and the second category of LED dies belongs to the second light emitting wavelength band and the second light emitting intensity. Please refer to Figure 46 , the first category of LED dies belongs to the first light emitting wavelength band and the first light emitting intensity, and the second category of LED dies belongs to the first light emitting wavelength band and the second light emitting intensity. Please refer to Figure 46-1 , the first category of LED dies belongs to the first light emitting wavelength band, the first light emitting intensity, and another light emitting intensity beside the first light emitting intensity. The second category of LED dies belongs to the second light emitting wavelength band, the second light emitting intensity, and another light emitting intensity beside the second light emitting intensity. Figure 45 、 Figure 46 and Figure 46-1 explain three embodiments of the present application, which show that the categories can be determined according to the implementation purpose, and the user can determine the characteristics that can be included in the categories of LED dies. For example, the first and second categories only have different brightness levels. Alternatively, the first and second categories have different light emitting wavelength bands. In one embodiment, the first category of LED dies belongs to the first light emitting wavelength band and the light emitting intensity level including the first light emitting intensity and the second light emitting intensity. In one embodiment, the first category of LED dies and the second category of LED dies belong to different light emitting wavelength bands and / or different light emitting intensities. That is, the categories of LED dies can be determined according to the implementation purpose, and are not limited to the above-mentioned embodiments.

[0118] In one embodiment, the first category of LED dies and the second category of LED dies are respectively placed on the first stage carrier by a transfer process. Please refer to Figure 6In one embodiment, the transfer printing process includes: picking up the LED dies from the substrate by adhering the LED dies to the adhesive layer of the transfer tool (S11); and placing (or releasing) the LED dies on one of the first stage carriers from the adhesive layer by forming a plurality of bumps on the adhesive layer (S12).

[0119] In one embodiment, the first type of LED dies and the second type of LED dies are placed on the first stage carriers by a direct release layer process, respectively. Referring to Figure 47 In one embodiment, the direct release layer process includes: forming an adhesive layer on the substrate (S61); picking up the LED dies from the substrate by the adhesive layer (S62); establishing contact between the LED dies and the first stage carriers (S63); and placing the picked up LED dies on the first stage carriers by weakening the LED dies' positions on the adhesive layer by exposure to light (S64).

[0120] [Third Embodiment]

[0121] Please refer to Figure 48 In one embodiment, the method for handling the LED dies with multiple light emission colors includes: selecting a plurality of pre-mixed LED dies with multiple light emission colors (e.g., red, green and blue); and placing each light emission color of the pre-mixed LED dies on a carrier according to a predetermined pattern. The predetermined pattern places a plurality of adjacent pre-mixed LED dies in the first stage carriers in the first direction on a plurality of non-adjacent positions in the first direction of the second stage carriers.

[0122] In one embodiment, the plurality of light emission colors of the pre-mixed LED dies collectively generate a white light emission color. For example, when the light emission colors of the pre-mixed LED dies include red and green, the pre-mixed LED dies can collectively generate a yellow light. Alternatively, the pre-mixed LED dies with red, green and blue light emission colors collectively generate a white light emission color.

[0123] Please refer to Figure 49 In one embodiment, the predetermined pattern arranges the pre-mixed LED dies with red, green and blue light emission colors on the second stage carriers in the second direction in the order of red, green and blue.

[0124] Figure 48 And Figure 49In some embodiments, the first and second directions are shown as two independent directions. The first and second directions can be selectively aligned with at least one of a horizontal direction, a vertical direction, a positive slope diagonal direction, and a negative slope diagonal direction. Alternatively, the first direction (or the second direction) can be a combination of two directions that are not parallel to each other. The first direction (or the second direction) is selectively aligned with one of a horizontal direction, a vertical direction, a positive slope diagonal direction, and a negative slope diagonal direction.

[0125] In a third embodiment, the premix LED dies can be placed on the second stage carrier by a transfer process. The transfer process of the third embodiment is similar to the transfer printing process of the first and second embodiments, as described above with respect to Figure 6 In the present embodiment, the premix LED dies can be similar to the LED dies of the first and second embodiments. The transfer printing process of the third embodiment can include selecting a portion of the premix LED dies by the adhesive layer of the transfer tool, where the plurality of bumps of the adhesive layer correspond to the selected premix LED dies, and placing (or releasing) the selected LED dies from the plurality of bumps of the adhesive layer on the plurality of locations of the second stage carrier.

[0126] In one embodiment, the premix LED dies are placed on the second stage carrier by a direct release layer process. The transfer printing process of the third embodiment is similar to the transfer printing process of the first and second embodiments, as described above with respect to Figure 7 and Figure 47 In the present embodiment, the premix LED dies can be similar to the LED dies of the first and second embodiments. The direct release layer process of the third embodiment can include forming an adhesive layer on the premix LED dies of the first stage carrier, individually defining the premix LED dies on the first stage carrier as a plurality of premix LED units, and selecting the premix LED dies from each premix LED unit on the first stage carrier on the adhesive layer to have a first direction dimension and a second direction dimension, where the first direction dimension corresponds to the second horizontal pitch and the second direction dimension corresponds to the second vertical pitch. Contact is established between the selected premix LED dies and the second stage carrier, and the selected premix LED dies are placed from the adhesive layer to the second stage carrier by exposing the adhesive layer to light at locations of the selected LED dies in the premix LED units to weaken the adhesive layer. The direct release layer process of the third embodiment is similar to the direct release layer process of the first embodiment, as described above with respect to the first embodiment. In the present embodiment, the premix LED dies can be similar to the LED dies arranged in the first embodiment.

[0127] The first stage carrier of the third embodiment (with respect to the selected LED dies of the first embodiment) can be applied toFigures 8 to 23 The transfer method described in the first embodiment is replaced by the light emitting diode dies on the first stage carriers. The details of the transfer method can be referred to the description of the previous embodiments, which are not repeated here. In addition, the predetermined pattern of the third embodiment can further process the pre-mixed light emitting diode dies (please refer to the light emitting diode dies in the drawings) including: (a) selecting a first stage carrier (T1, 1) Figure 9 ); (b) assigning a first sequence integer 1 in the cell mapping table 1, Figure 9 ); (c) selecting the pre-mixed light emitting diode dies in the matrix corresponding to the first sequence integer in the cell mapping table in order, and placing the selected pre-mixed light emitting diode dies on different sub-arrays Figure 9 and Figure 10 ) until the pre-mixed light emitting diode dies corresponding to the first sequence integer (R1 x R2) in the cell mapping table 1 are completely selected; (d) assigning at least a second sequence integer (the second sequence integer 2 in the cell mapping table 1) in the cell mapping table for the selected first stage carrier (T1, 1), and selecting the pre-mixed light emitting diode dies from the diode cells in order according to the order corresponding to the second sequence integer in the cell mapping table on the selected first stage carrier (T1, 1), and placing the selected pre-mixed light emitting diode dies on other sub-arrays on the second stage carrier Figure 11 ) until the pre-mixed light emitting diode dies corresponding to the second sequence integer in the cell mapping table (R1 x R2) are completely selected Figure 12 ); and (e) selecting the next first stage carrier and repeating steps (b) to (d) Figures 14 to 23 ). Importantly, the number of diode cells in each two-dimensional matrix is a multiple of the number of first stage carriers providing light emitting diode dies for transfer to the second stage carrier. For example, when different first stage carriers respectively provide light emitting diode dies of red, green and blue light emitting colors, each second stage carrier also respectively includes a plurality of light emitting diode dies of red, green and blue light emitting colors. The second horizontal pitch h2 is X times the first horizontal pitch h1 (h2 = x h1). The second vertical pitch v2 is Y times the first vertical pitch v1 (v2 = Y x v1), where X and Y are integers greater than 1. After transferring the light emitting diode dies of the first stage carriers, the Z number of light emitting diode dies on the first stage carriers are transferred to the second stage carrier. These light emitting diode dies are divided into a plurality of cells; each cell contains X x Y number of light emitting diode dies in a two-dimensional matrix (X, Y).

[0128] The predetermined pattern of the third embodiment can be applied to Figures 24 to 35 the transfer method described in the first embodiment, which is replaced by the light emitting diode dies on the first stage carriers. The details of the transfer method can be referred to the description of the previous embodiments, which are not repeated here.

[0129] In one embodiment, three sequence integers are used to map the LED dies in the first stage of the selection sequence. Please refer to Figures 36-1 to 36-3 wherein several unit mapping tables are provided for illustration of other options for selecting and placing LED dies on the carriers. The user can determine the appropriate unit mapping table according to the application purpose.

[0130] In one embodiment, the unit mapping table of three sequence integers can not be limited to the 3x3 matrix as described above. Please refer to Figures 36-4 to 36-9 wherein the unit mapping table can be a 3x4 matrix, a 3x5 matrix, or other types of unit mapping tables. In addition, the number of sequence integers can not be limited to three. For example, four is also a possible number of sequence integers for adjusting the pitch and mixing LED dies. Please refer to Figure 36-10 and Figure 36-11 wherein an example of a unit mapping table of four sequence integers is shown. Therefore, according to the present application, the number of sequence integers can be determined according to the number of wafers providing LED dies, such as two, five, or other integers, wherein the related unit mapping table can be modified accordingly.

[0131] The predetermined pattern of the third embodiment can be applied to the process described in Figures 37 to 37-2 . The details can be referred to the description of the previous embodiments, which are not repeated here. In addition, the predetermined pattern arranges the method of mixing LED dies, comprising: (a) setting a leading sequence integer and an initial sequence integer corresponding to a current carrier number in a cell selection; (b) selecting L rows and columns from the unit mapping table, wherein the numbers in the unit mapping table are the same as the leading sequence integer in the cell selection order, arranging the L mixed LED dies in the selected cell in the same order, and arranging the mixed LED dies in the selected cell until all the mixed LED dies in the selected cell are arranged, wherein the rows and columns of the selected cell are the same as the rows and columns of the L LED cells in the two-dimensional subarray; (c) re-arranging the next leading sequence integer in the cell selection order by shifting one position in the cell selection sequence and adjusting the cell selection sequence and the other remaining sequence integers in order; (d) increasing the current carrier number by 1; (e) re-initializing the cell selection order by tracing back each of the remaining sequence integers by shifting one position in the cell selection sequence, re-arranging the leading sequence integer in the cell selection sequence in order, and re-arranging the other sequence integers by shifting one position in order until the leading carrier number in the cell selection sequence is equal to the current carrier number, and returning to step (a).

[0132] According to the above mixed light emitting diode chip embodiments, a uniform distribution of light emitting diode chips can be obtained. The present application provides a light emitting element supply carrier or a light emitting element device with a high uniformity of light emitting wavelength, light emitting intensity, or color index.

[0133] [Fourth embodiment]

[0134] Please refer to Figure 50 and Figure 51 A light emitting diode supply carrier includes at least one carrier and a plurality of light emitting diode chips placed on each carrier. The plurality of light emitting diode chips is divided into a plurality of diode groups, which are respectively assigned to a same plurality of two-dimensional matrices in a matrix size (for example, but not limited to Figure 50 3x3 matrix in ), wherein more than 40% of the diode matrices are uniform (for example, Figure 51 In one embodiment, the uniform carrier has more than 30%, 40%, 70%, or 80% of the uniform matrices. Figure 51 An embodiment is illustrated, wherein there is a difference between the maximum and minimum values of the number of light emitting diode chip categories in any matrix in the light emitting color of the same matrix. According to a category of light emitting diode chips, the difference in the uniform matrix is greater than 50% of the maximum difference in the number of light emitting diode chip categories in the carrier. In one embodiment, the difference in the number of light emitting diode chips in the carrier is greater than 30%, 40%, 70%, or 80% of the maximum difference in the number of light emitting diode chips is considered uniform. Figure 51 In , the category of light emitting diode chips is illustrated by using wavelength as an example to calculate the category.

[0135] Figure 50 and Figure 51 The illustrated matrix is used to illustrate light emitting diode chips with the same light emitting color. For the needs of calculation, each matrix can include more light emitting diode chips with the same light emitting color, such as 500, 8000, 10000, 15000, or other quantities (if from the perspective of carrying a Micro-LED carrier, there are at least 5000 light emitting diode chips on the carrier). If the light emitting diode chips on the carrier include various light emitting colors, only the light emitting diode chips with the same light emitting color are considered in the calculation to calculate the maximum and minimum values. In other words, this embodiment only needs to calculate according to the information of the least number of light emitting diode chips with the same light emitting color in the matrix.

[0136] Figure 51The embodiment of the fourth embodiment is an example of the calculation of the category. The embodiment should not be limited to the wavelength. The luminous intensity can also be a physical characteristic that is determined by the uniform mixing. Those skilled in the art can understand how to deal with the embodiment related to the luminous intensity from the wavelength calculation of the embodiment of the fourth embodiment. Therefore, the details of the embodiment related to the luminous intensity are not described in detail here. In an embodiment, Figure 51 The values in the matrix shown in Table 4 are the average values of a group of LED dies. Specifically, Figure 51 The average value of the value 543 nm in Table 4 is 9 adjacent LED dies. The number of LED dies in the matrix can be adjusted, for example, 4, 6, 9, 16, or other numbers.

[0137] In an embodiment, when the mixed LED dies have a higher degree of uniform mixing on the LED supply carrier, the percentage of the uniform mixing matrix on the carrier can be higher. For example, more than 40% of the matrix on the carrier is uniformly mixed. Each uniformly mixed matrix is defined as the difference between the maximum value and the minimum value of the category value of the same light emission color, which is greater than 50% of the maximum difference of the category value of all LED dies in the carrier. The uniform mixing state judgment technique described in the fourth embodiment can be applied to other embodiments of the present application.

[0138] [The fifth embodiment]

[0139] Please refer to Figure 52 and Figure 53 , the LED supply carrier includes at least one carrier and a plurality of LED dies (for example, LED dies 1 to 16, as shown in Figure 52 , wherein more than 60% of the LED dies and the majority of the LED dies around them form a matrix that is uniformly mixed, and the uniformly mixed LED dies are defined as the matrix with them as the center having a uniform mixing index greater than a reference value. The LED supply carrier can be applied to the light emitting element device. Figure 52 and Figure 53 The LED dies shown in the matrix in Table 4 are used to illustrate the calculation method of the LED dies of the same light emission color. For technical needs, the number of LED dies of the same light emission color in each matrix can be higher, for example, 500, 8000, 1000, 15000, or other numbers.

[0140] Please refer to Figure 52, the LED dies 1 to 16 can be divided into groups and assigned to a plurality of two-dimensional matrices A, B, C and D. In the matrix, the LED die 6 is the central LED die, and the LED dies 1, 2, 3, 5, 7, 9, 10 and 11 are the surrounding LED dies, whose category values are used to calculate the uniformity index. The surrounding LED dies 1, 2, 3, 5, 7, 9, 10 and 11 in the matrix A can be the central LED dies of other matrices. For example, the surrounding LED die 7 in the matrix A is the central LED die of the matrix B; the surrounding LED die 10 in the matrix A is the central LED die of the matrix C; and the surrounding LED die 11 in the matrix A is the central LED die of the matrix D. In other words, the uniformity index can be considered as the difference of the matrices, which are calculated to estimate the uniformity of the matrix, as shown in Figure 53 .

[0141] In Figure 53 , the uniformity index is calculated by dividing the sum of the absolute values of the differences between the category values of the central LED die (CC) of the matrix and the category values of the surrounding LED dies of the same color in the matrix by N, where N is the number of the LED dies of the same color in the matrix. In other words, the uniformity index is the average of the differences between the central LED die and the surrounding LED dies (CS) of the matrix. In one embodiment, Figure 53 , the category values in the matrix shown in Figure 53 are the average values of a group of LED dies. Specifically, Figure 53 , the average value of the category value 543 nm is 9 adjacent LED dies. The number of LED dies in the group can be adjusted, for example, 4, 6, 9 and 16.

[0142] In the fifth embodiment, the category can be the emission wavelength or the emission intensity. When the category is the emission wavelength, the reference value is the wavelength threshold; or when the category is the emission intensity, the reference value is the intensity threshold.

[0143] Figure 53 The matrix shown in Figure 53 is an example of the wavelength category. For example, when the wavelength threshold (reference value) is 3 nm, which is smaller than the uniformity index corresponding to the central LED die of the matrix in Figure 53 , the central LED die in Figure 53 is uniform. Or, when the wavelength threshold (reference value) is 3.5 nm, which is larger than the uniformity index corresponding to the central LED die of the matrix in Figure 53 , the central LED die in Figure 53 is not uniform.The central LED dies in the matrix shown are not homogenized. On the carrier, the homogenization can be calculated based on the matrix formed on the LED dies in the carrier and the surrounding LED dies. The homogenization determination feature described in the fifth embodiment can also be applied to other embodiments of the present specification.

[0144] Furthermore, the above-mentioned "more than 60% of the LED dies are homogenized" is an example and not a limitation. The percentage can be determined according to the implementation requirements. For example, according to the present specification, the percentage can be 70% or more in a higher homogenization carrier requirement.

[0145] [Sixth Embodiment]

[0146] Compared with the fourth embodiment, the sixth embodiment further includes a circuit for controlling the LED dies. Please refer to Figure 54 A light emitting element device includes a carrier, a plurality of LED dies placed on the carrier, and a circuit mounted on the carrier and electrically coupled to the plurality of LED dies to control the light emission of the LED dies. The plurality of LED dies are divided into a plurality of diode groups, each assigned to a plurality of two-dimensional matrices of the same size. According to the method of the present specification, more than 60% of the matrices are homogenized. In the homogenized matrix, the difference between the maximum and minimum values of the same light emission color LED die category is greater than 50% of the maximum difference in the number of the same category of LED dies on the carrier. For the determination of homogenization, please refer to the explanation of the fourth embodiment.

[0147] Figure 54 The LED dies in the matrix shown are used to illustrate the LED dies of the same light emission color. Due to technical requirements, there can be more LED dies of the same light emission color in each matrix, such as 5000, 8000, 10000, 15000, or other quantities. When the LED dies on the carrier include LED dies of various light emission colors and different indices are determined based on the minimum count of LED dies of each same light emission color in the matrix, the vertical and horizontal dimensions of the matrix can be increased to include enough LED dies to meet the minimum count of LED dies of each same light emission color in the matrix. The combination of the circuit and the carrier described in the sixth embodiment can be applied to other embodiments disclosed in the present specification in the form of a circuit, such as another carrier, circuit, or module.

[0148] [Seventh Embodiment]

[0149] Compared with the fifth embodiment, the seventh embodiment provides a light emitting element device further including a circuit for controlling the light emission of the plurality of LED dies. Please refer to Figure 55A light emitting element device includes a carrier on which a plurality of light emitting diode dies are placed, and a circuit mounted on the carrier and coupled to the plurality of light emitting diode dies to control light emission of the plurality of dies. More than 60% of the light emitting diode dies are homogenously mixed with surrounding light emitting diode dies in a matrix calculated by a homogeneity index, wherein a homogenously mixed light emitting diode die is defined as having a homogeneity index greater than a reference value. Reference is made to Figure 52 With Figure 53 The homogeneity index is calculated according to a sum of |CS-CC| and N. The sum of |CS-CC| is according to all absolute values of differences between values of a category of a light emitting diode die in a center of a matrix (CC) and values of a category of a plurality of surrounding light emitting diode dies in the matrix (CS), where the surrounding light emitting diode dies have the same light emission color as the center light emitting diode die, and N is a count of light emitting diode dies close to the matrix. For details of determining the differences and the reference value, reference is made to the explanation of the fifth embodiment.

[0150] In the above embodiments, the percentage of the light emitting diode dies that are homogenously mixed with the light emitting diode dies in close proximity can not be limited to 60%. For example, when the light emitting diode dies on the light emitting element device are mixed in more categories, the percentage can be higher, such as 70%, 80%, or other higher percentages.

[0151] Figure 55 The light emitting diode dies in the illustrated matrix are an embodiment of light emitting diode dies having the same light emission color. The light emitting diode dies having the same light emission color are used for illustration. For functional requirements, the number of light emitting diode dies having the same light emission color in each matrix can be more, such as 5000, 800, 10000, 15000, or other numbers. When the light emitting diode dies in the matrix include various light emission colors, to determine whether the light emitting diode dies in the matrix are homogenously mixed among the light emitting diode dies that are homogenously mixed, according to the minimum number of light emitting diode dies having the same light emission color, the vertical and horizontal dimensions of the matrix can be adjusted to include enough light emitting diode dies to meet the minimum number requirement of light emitting diode dies having the same light emission color in the matrix. The elements described in the sixth embodiment can be a combination of a circuit, a carrier, or a module.

[0152] In an embodiment, the light emitting element device can be a micro light emitting diode display (Micro-LED display, mini-LED display) or a backlight module.

[0153] [The eighth embodiment]

[0154] Reference is made to Figure 56The present invention further provides a method for processing light-emitting diode (LED) chips, comprising: providing a first wafer Wf having a first emission color, a second wafer Ws having a second emission color, a plurality of substrates, and a plurality of carriers Tr1, Tr2, Tr3, ...; selecting a group of diodes of the same type from the first wafer Wf and placing it on a substrate B11; sequentially selecting (e.g., selecting one after another) adjacent LED chips in a first direction from the group of diodes on substrate B11 and placing them sequentially on a predetermined portion of the selected carrier Tr1 (e.g., adjacent positions of carriers Tr1 in a second direction); repeating the step of selecting LED chips from the group of diodes on substrate B11 until the predetermined portion of carrier Tr2 is completely filled with LED chips from the group of diodes on substrate B11; repeating the step of selecting LED chips from the group of diodes on substrate B11 until the predetermined portion of carrier Tr3 is completely filled with LED chips from the group of diodes on substrate B11; and from the second wafer Ws... Figure 57 A group of diodes of the same type is selected from the diode group on substrate B12 and placed on substrate B12. Adjacent LED chips in the first direction are sequentially selected (e.g., one after another) from the diode group on substrate B12 and placed sequentially in other predetermined portions of the selected carrier Tr1 (e.g., adjacent positions of carrier Tr1 in the second direction). The step of selecting LED chips from the diode group on substrate B12 is repeated until the other predetermined portions of the selected carrier Tr1 are completely filled with LED chips from the diode group on substrate B12. The step of selecting LED chips from the diode group on substrate B12 is repeated until the other predetermined portions of the selected carrier Tr2 are completely filled with LED chips from the diode group on substrate B12. The step of selecting LED chips from the diode group on substrate B12 is repeated until the other predetermined portions of the selected carrier Tr3 are completely filled with LED chips from the diode group on substrate B12. The LED chips on carriers Tr1, Tr2, Tr3, etc., are completely placed on the light-emitting element device according to a predetermined pattern. Figure 58 In one embodiment, a predetermined pattern is established by placing LED chips on a carrier according to a placement order (e.g., LED chips are first placed on carrier Tr1, then carrier Tr2, and then carrier Tr3), and then placed in corresponding non-adjacent positions on the light-emitting element device (e.g., according to a random arrangement method). In one embodiment, an LED chip from carrier Tr1 is positioned next to an LED chip from carrier Tr2. For details regarding the predetermined pattern, please refer to the foregoing embodiments; related descriptions are not detailed here. Figure 57 As shown, the light-emitting diode (LED) chips of wafers Ws and Wf are placed in a first direction of the substrate. In one embodiment, the LED chips of wafers Ws and Wf are placed in a second direction of the substrate.

[0155] Please see Figure 59 and Figure 60 In the eighth embodiment, the method for processing light-emitting diode (LED) chips may further include: selecting a group of diodes from a third wafer Wt having a third emission color and placing it on a substrate B13; sequentially placing LED chips from the substrate B13 onto a carrier Tr1; repeating the step of selecting LED chips from the diode groups on the substrate B13 until LED chips from the diode groups on the substrate B13 are completely arranged in other predetermined portions on the carrier Tr1; repeating the step of selecting LED chips from the substrate B13 until LED chips from the diode groups on the substrate B13 are completely arranged in other predetermined portions on the carrier Tr2; repeating the step of selecting LED chips B13 until LED chips are completely arranged in other predetermined portions on the carrier Tr3; and transferring the LED chips from the carriers Tr1, Tr2, and Tr3 to a light-emitting element device. Figure 60 The light-emitting diode (LED) chip is disposed in a first direction of the light-emitting element device or carrier, such as... Figures 58 to 60 As shown. In one embodiment, the light-emitting diode chip may also be disposed in a second direction on the light-emitting element device or carrier.

[0156] It is important to note that LED chips selected from the same diode group are considered to have substantially the same optical characteristics. For example, the difference between the maximum and minimum emission wavelengths of the LED chips in the diode group is less than 1% of the minimum. In another embodiment, the difference between the maximum and minimum emission wavelengths of the LED chips in the diode group is less than 3% of the minimum.

[0157] [Ninth Embodiment]

[0158] refer to Figure 61 The present invention further provides a method for processing light-emitting diode (LED) chips, comprising: providing a plurality of substrates and a plurality of carriers Tr1, Tr2, Tr3, etc.; selecting a diode group from a first wafer Wf having a first emission color and placing it on a substrate B21; then sequentially selecting LED chips from the diode group on the substrate B21 and placing them sequentially on predetermined areas of different carriers Tr1, Tr2, Tr3, etc.; repeating the selection of LED chips from the diode group on the substrate B21 and sequentially placing the LED chips on different carriers Tr1, Tr2, Tr3, etc.; transferring the LED chips from a second wafer Ws having a second emission color to a substrate B22 (… Figure 62The process involves sequentially placing LED chips onto different carriers Tr1, Tr2, Tr3, etc., where LED chips of the second emitting color on carriers Tr1, Tr2, Tr3, etc., are adjacent to LED chips of the first emitting color, respectively. The process of selecting LED chips from the diode group on substrate B22 is repeated, and the LED chips are placed on different carriers Tr1, Tr2, Tr3, etc. When all carriers Tr1, Tr2, Tr3, etc., are fully aligned with the LED chips, the LED chips on carriers Tr1, Tr2, Tr3, etc., are transferred to the light-emitting element device according to a predetermined pattern. Figure 63 In one embodiment, a predetermined pattern is used to place LED chips onto carriers according to a sequence of transfer from the substrate (e.g., the LED chips are first placed on carrier Tr1, then on carrier Tr2, and then on carrier Tr3, placed at two non-adjacent locations on the light-emitting element device). For details of the predetermined pattern, please refer to the above embodiment, which is not elaborated here.

[0159] See Figure 64 and Figure 65 In the ninth embodiment, the method for processing light-emitting diode (LED) chips may further include: selecting a group of diodes from a third wafer Wt having a third emission color and moving it to a substrate B23; sequentially selecting LED chips from the diode groups on substrate B23 and placing them on different carriers Tr1, Tr2, Tr3, etc.; repeating the step of selecting LED chips from the diode groups on substrate B23 and placing them on different carriers Tr1, Tr2, Tr3, etc.; and transferring the LED chips on carriers Tr1, Tr2, Tr3, etc., to a light-emitting element device (LED device). Figure 65 In this embodiment, the carrier has multiple predetermined sections (e.g., 200 predetermined sections) for placing LED chips. During this process, the predetermined sections on carrier Tr1 may not be fully placed (e.g., placed on 50 sections), and then LED chips from substrate B23 continue to be placed on the multiple predetermined sections on carrier Tr2. Figures 61 to 65 As shown, the light-emitting diode (LED) chip is disposed in a first direction on the light-emitting element device or carrier. In one embodiment, the LED chip may also be disposed in a second direction on the light-emitting element device or carrier.

[0160] [Tenth Embodiment]

[0161] refer to Figure 66The present application also provides a method for processing LED dies, comprising: (a) providing a plurality of carriers Tr1, Tr2, Tr3, etc.; (b) selecting a first LED group and a second LED group from a first wafer Wf of a first light emitting color, placing the first and second LED groups on different substrates B31 and B32, and selecting LED dies from the first and second LED groups on the substrates B31 and B32, respectively, and placing the LED dies on predetermined areas of different areas of the carriers Tr1, Tr2, Tr3, etc., wherein a portion of the LED dies of the first and second LED groups are placed together in at least one of the carriers Tr1, Tr2, Tr3, etc. (for example, but not limited to the carrier Tr3); repeating the steps of selecting LED dies from the LED groups on the substrates B31 and B32, and transferring the LED dies to the carriers Tr1, Tr2, Tr3, etc.; selecting a third LED group from a second wafer Ws of a second light emitting color, placing the third LED group on substrates B33 and B34, and selecting LED dies from the substrates B33 and B34, respectively, and placing the LED dies on the carriers Tr1, Tr2, Tr3, etc. (in one embodiment, two LED groups are selected and placed on the carriers, wherein the two LED groups include the third LED group and a fourth LED group), wherein the LED dies of the second light emitting color (from the substrates B33 and B34) are adjacent to the LED dies of the first light emitting color on the carriers Tr1, Tr2, Tr3, etc., respectively; repeating the steps of selecting LED dies from the LED groups, and transferring the LED dies from the substrates B33 and B34 to the carriers Tr1, Tr2, Tr3, etc.; and when all the carriers Tr1, Tr2, Tr3, etc. are fully placed with LED dies, placing the carriers Tr1, Tr2, Tr3, etc. on a light emitting device according to a predetermined pattern. Figure 67 ) In one embodiment, the carriers are arranged according to a predetermined pattern of the sequence of selecting LED dies from the carriers (for example, the LED dies on the carrier Tr1 are selected first, followed by the carrier Tr2, and then the carrier Tr3). In one embodiment, the LED dies are placed on the light emitting device at corresponding non-adjacent positions after the LED dies are removed from the carriers. For details, please refer to the above embodiments, which are not described in detail. Figure 68 ) In one embodiment, the carriers are arranged according to a predetermined pattern of the sequence of selecting LED dies from the carriers (for example, the LED dies on the carrier Tr1 are selected first, followed by the carrier Tr2, and then the carrier Tr3). In one embodiment, the LED dies are placed on the light emitting device at corresponding non-adjacent positions after the LED dies are removed from the carriers. For details, please refer to the above embodiments, which are not described in detail.

[0162] Reference Figure 69 With Figure 70, the method of processing LED dies can further comprise: selecting a fifth die group or a sixth die group from a third wafer Wt having a third color of light emission; placing the fifth die group or the sixth die group on a third color of light emission substrate B35 and B36; and selecting LED dies from the substrate B35 and B36 and placing the LED dies on different carriers Tr1, Tr2, Tr3, etc. respectively; repeating the step of selecting LED dies from the substrate B35 and B36 and placing the LED dies on different carriers Tr1, Tr2, Tr3, etc. respectively; and placing the carriers Tr1, Tr2, Tr3 on a light emitting element device Figure 70 . The LED dies are arranged in a first direction on the light emitting element device or the carriers, as shown in Figures 67 to 70 . In an embodiment, the LED dies are arranged in a second direction on the light emitting element device or the carriers.

[0163] Note that the LED dies of one die group can be placed in adjacent positions on the same carrier. For example, three LED dies of a first die group are arranged in a row on a carrier. In another embodiment, nine LED dies of the first die group are arranged in a 3X3 matrix on the carrier Tr1.

[0164] [Eleventh Embodiment]

[0165] Referring to Figure 71 , the present application further provides a method of processing LED dies, comprising: testing LED dies on first color wafers Wf1 and Wf2 and defining different categories of LED dies on the wafers according to the test results; selecting a first category of LED dies on the two first color wafers; testing LED dies on second color wafers Ws1 and Ws2 and defining different categories of LED dies on the wafers according to the test results Figure 72 ; selecting a first die group and a second die group of the first category from the two wafers Wf1 and Wf2 respectively Figure 71 ; placing the first die group and the second die group of the first category on a substrate and transferring the LED dies from the substrate to two first color carriers Tr1,1 and Tr1,2; selecting a third die group and a fourth die group of a second category from the second color wafers Ws1 and Ws2 respectively Figure 72 ; sequentially selecting the third die group and the fourth die group of the second category from the substrate and placing the third die group and the fourth die group on two second color carriers Tr2,1 and Tr2,2 respectively; and referring to Figure 75, selecting a plurality of groups of light emitting diodes in order from the first light-extraction color carriers (Tr1,1 and Tr1,2) and the second light-extraction color carriers (Tr2,1 and Tr2,2), and placing the groups of light emitting diodes on the pixel carriers Tp1, Tp2 and Tp3, wherein each group of light emitting diodes includes two light emitting diode dies of a first type and a second type, and the light emitting diode dies of the second type on the pixel carriers Tp1, Tp2 and Tp3 are respectively adjacent to the light emitting diode dies of the first type; when the light emitting diode dies are completely arranged on all the pixel carriers, a predetermined pattern according to the sequence of placing the light emitting diode dies on the pixel carriers, the order of arranging a pixel carrier and a next pixel carrier (for example, the light emitting diode dies are first placed on the pixel carrier Tp1, then the pixel carrier Tp2, and then the pixel carrier Tp3) to be placed on the light emitting element device at two non-adjacent positions. In an embodiment, the pixel carriers can be placed at adjacent positions on the light emitting element device. In an embodiment, the light emitting diode dies are selected from the light emitting diode dies of the first type and the second type on the pixel carriers to be placed at adjacent positions on the light emitting element device. In an embodiment, the light emitting diode dies are arranged in a pixel form on the pixel carriers. For details of the predetermined pattern, please refer to the above-mentioned embodiments, which are not described here. As shown in Figure 75 , the light emitting diode dies of different types are arranged in a first direction of the pixel carriers, as shown in Figure 75 . In an embodiment, the light emitting diode dies of different types are arranged in a second direction of the pixel carriers.

[0166] In an embodiment, the above-mentioned step of placing the first and second groups of diodes of the first type on the two first light-extraction color carriers (Tr1,1 and Tr1,2) can be performed in another way: referring to Figure 73 , selecting the light emitting diode dies of the first group of diodes, and placing the light emitting diode dies of the first type on the first light-extraction color carriers (Tr1,1 and Tr1,2), and selecting the light emitting diode dies of the first type from the second group of diodes and placing them on the first light-extraction color carriers (Tr1,1 and Tr1,2).

[0167] In an embodiment, the above-mentioned step of placing the third and fourth groups of diodes of the second type in order on the two second light-extraction color carriers (Tr2,1 and Tr2,2) can be performed in another way: referring to Figure 74From the third diode group of the second category, LED chips of the third diode group are selected in sequence and placed in the second light-emitting color carrier (Tr2,1 and Tr2,2); from the fourth diode group of the second category, LED chips of the fourth diode group are selected in sequence and placed in the second light-emitting color carrier (Tr2,1 and Tr2,2).

[0168] refer to Figure 76 , 77 Compared with 78, the method for processing light-emitting diode (LED) chips may further include: designating a third category to a plurality of LED chips on two third-color wafers (Wt1 and Wt2) having a third emission color, and transferring the fifth and sixth diode groups of the third category thereon to two substrates; sequentially selecting the fifth and sixth diode groups on the substrates and placing them on two third-color emission carriers (Tr3,1 and Tr3,2); refer to Figure 78 Diode groups are selected sequentially from the first light-emitting color carrier (Tr1, 1 and Tr1, 2), the second light-emitting color carrier (Tr2, 1 and Tr2, 2), and the third light-emitting color carrier (Tr3, 1 and Tr3, 2), and placed on multiple pixel carriers (Tp1, Tp2, and Tp3). Each diode group includes LED chips of a first category, a second category, and a third category. The LED chips of the third category are adjacent to the LED chips of the second category on the pixel carriers (Tp1, Tp2, and Tp3). The pixel carriers (Tp1, Tp2, and Tp3) are then placed on the light-emitting element device. Figure 78 ).like Figure 78 As shown, the light-emitting diode (LED) chips are arranged in a first direction of the pixel carrier. In one embodiment, the LED chips are arranged in a second direction of the pixel carrier.

[0169] In one embodiment, the number of light-emitting diode (LED) chips on the light-emitting element device can be in the millions, tens of millions, or hundreds of millions. The number of LED chips depends on the size and resolution of the light-emitting element device, as well as the size of the LED chips within the device. The LED chip size may be less than 20 μm, between 20 μm and 100 μm, between 100 μm and 300 μm, or greater than 300 μm.

[0170] In one embodiment, the step of sequentially placing the fifth and sixth diode groups of the third category on the two third-color carriers (Tr3,1 and Tr3,2) can be performed in another manner: refer to Figure 77, selecting, in order, light emitting diode dies from a fifth diode group of the third category and placing the light emitting diode dies on the third color carrier (Tr3, 1 and Tr3, 2); selecting, in order, light emitting diode dies from a sixth diode group of the third category and placing the light emitting diode dies on the third color carrier (Tr3, 1 and Tr3, 2).

[0171] In the above embodiments, the first, second and third light emitting colors can be selected from the groups of red, green and blue light emitting diodes. It is noted that the same light emitting color can further be a range of light emitting wavelengths. For example, the difference between the maximum and minimum light emitting wavelengths of the light emitted by the light emitting diode dies is less than 1% of the minimum light emitting wavelength of the light emitted by the light emitting diodes of the same light emitting color.

[0172] [Eleventh Embodiment]

[0173] Referring to Figure 79 where most of the light emitting diode dies arranged on the wafer W4 can be in the form of a plurality of diode groups, each diode group having a plurality of light emitting diode dies of the same category. In this embodiment, there are four categories. The categories can be determined based on optical properties, such as light emitting wavelength, light emitting intensity or color index. The size (or proportion) of the light emitting diode dies in each diode group is the same, and the number of light emitting diode dies in each diode group can but is not limited to be the same. For example, when the light emitting diode dies in a predetermined group can belong to multiple categories, or the quality of the light emitting diode dies in one group can not be stable, the number of qualified light emitting diode dies in the group of the same size / proportion can be different. When the number of qualified light emitting diode dies in one group is less than a predetermined number (corresponding to the size / proportion of the group), diode dies can be selected from other groups to fill the vacant positions in the group. Figure 79 An embodiment is shown in Figure 79 The numbers shown are not limited to the numbers shown, but can be determined according to requirements.

[0174] Referring again to Figure 79The bottom of the diagram shows the normal distribution curve of the optical characteristics of the LED chips on wafer W4. It is important to note that the highest value of the number of LED chips in the diode group is close to the average value in the normal distribution curve (e.g., at a mean of 0), excluding the portion of wafer W4 without diode groups. Typically, diode groups of the same size on wafer W4 leave a region without diode groups in the wafer W4 configuration, containing some ungrouped LED chips. This arrangement facilitates fast and efficient LED chip transfer operations, where diode groups of the same type can be transferred to a substrate, and diode groups from different substrates can have an initial LED chip mix on the first-stage carrier. Figure 79A It does this by transferring groups of diodes instead of selecting individual LED chips.

[0175] In one embodiment, please refer again Figure 79A The pitch A between the LED chips on wafer W4 is equal to the pitch B between the nearest LED chips in adjacent diode groups. Specifically, the operation of transferring diode groups from the substrate to the first-stage carrier may not require pitch adjustment between adjacent LED chips. Furthermore, the spacing (pitch PB) between the nearest LED chips in adjacent diode groups is the same as the spacing (pitch PA) between adjacent LED chips on wafer W4, and this transfer operation can be accomplished through a direct release layer.

[0176] like Figure 80 As shown, different types of diode groups are arranged sequentially on the substrate, repeatedly arranged on the first-stage carrier. Each row on the first-stage carrier has multiple elements or corresponding blocks. Diode groups of categories 1, 2, 3, and 4 are repeatedly transferred from wafer W4 to the corresponding rows of blocks in a sequential order (the categories of diode groups are in the order 1, 2, 3, 4, 1, 2, 3, 4, ...). The arrows illustrate the operations related to the mapping relationship of the transfer of LED chips from different categories in the first row of the first-stage carrier, and the multiple subarrays corresponding to the first row of the second-stage carrier. Multiple subarrays are arranged in the row direction of the second-stage carrier, and each subarray in the corresponding row has multiple elements or corresponding blocks, as shown in the figure. Figure 80 In the first stage carrier, a proportion (e.g., possibly but not limited to 25%) of the diode groups in the first row of the first stage carrier is transferred to the corresponding blocks in the first row of the second stage carrier.

[0177] Figure 80A Draw Figure 80The next step shown, where arrows indicate subsequent operations related to the mapping relationship between LED dies, involves transferring LED dies from different categories of diode groups in the first row of the first-stage carrier to a subarray in the first row of the second-stage carrier. Figure 80 compared to, Figure 80A The light-emitting diode die shown is from the diode group in the first row of the first-stage carrier, which is more... Figure 80 Shifting one diode group to the right, each block of the subarray on the second-stage carrier includes LED chips of two different categories. Users can refer to the above embodiment for synchronously adjusting the distance and mixing operation (such as random arrangement methods) when placing LED chips on the subarray blocks. After this step, each block of the subarray on the first row of the second-stage carrier includes one proportion (e.g., 25%) of the first category of LED chips and another proportion (e.g., 25%) of the second category of LED chips.

[0178] Please see Figure 80B In this process, LED chips from the diode groups in the first row of the first-stage carrier are transferred to subarrays in the second row of the second-stage carrier. The arrows illustrate subsequent operations related to the mapping relationship between the LED chips, which involves transferring LED groups of different types from the first row of the first-stage carrier to subarrays in the second row of the second-stage carrier. Therefore, LED chips from the diode groups in the first row of the first-stage carrier are transferred not only to subarrays in the first row of the second-stage carrier but also to subarrays in the second row of the second-stage carrier. Thus, LED chips from the diode groups in the first row of the first-stage carrier can be distributed to subarrays in both rows of the second-stage carrier. From a different perspective, LED chips from the first row of the first-stage carrier can be distributed in two different directions (a third and a fourth direction), involving a mixing and chip allocation process.

[0179] See Figure 80C Compared to Figure 80B , Figure 80C The LED chips provided on the diode group in the first row of the first-stage carrier shown in the diagram move to the right to the next subarray block on the second row of the second-stage carrier, each block comprising two different categories of LED chips. Each block of the subarray on the second row of the second-stage carrier contains one proportion (e.g., 25%) of one category of LED chips and another proportion (e.g., 25%) of another category of LED chips.

[0180] exist Figure 80D In the first row of the first-stage carrier, the light-emitting diode chips provided by the diode group are... Figure 80CIn the second stage, the first row of the second stage carrier is moved to the right to the next block. In this way, the blocks of the sub-array on the first row of the second stage carrier comprise three different categories of LED dies. The blocks of the sub-array on the first row of the second stage carrier comprise one proportion (e.g. 25%) of one category of LED dies, another proportion (e.g. 25%) of another category of LED dies, and another proportion (e.g. 25%) of another category of LED dies. Furthermore, the blocks of the sub-array on the first row of the second stage carrier comprise LED dies from the same diode group of the first row of the first stage carrier. Figure 80D In the second stage, the first row of the second stage carrier is moved to the right to the next block. In this way, the blocks of the sub-array on the first row of the second stage carrier comprise three different categories of LED dies. The blocks of the sub-array on the first row of the second stage carrier comprise one proportion (e.g. 25%) of one category of LED dies, another proportion (e.g. 25%) of another category of LED dies, and another proportion (e.g. 25%) of another category of LED dies. Furthermore, the blocks of the sub-array on the first row of the second stage carrier comprise LED dies from the same diode group of the first row of the first stage carrier. Figure 80E In the second stage, the first row of the second stage carrier is moved to the right to the next block. In this way, the blocks of the sub-array on the first row of the second stage carrier comprise three different categories of LED dies. The blocks of the sub-array on the first row of the second stage carrier comprise one proportion (e.g. 25%) of one category of LED dies, another proportion (e.g. 25%) of another category of LED dies, and another proportion (e.g. 25%) of another category of LED dies. Furthermore, the blocks of the sub-array on the first row of the second stage carrier comprise LED dies from the same diode group of the first row of the first stage carrier.

[0181] In the twelfth embodiment, the operation of one wafer, one first stage carrier and one second stage carrier is described. LED dies from multiple wafers can be transferred to one first stage carrier via the substrate, or LED dies from one wafer can be transferred to multiple first stage carriers via the substrate. Furthermore, LED dies from multiple first stage carriers can be transferred to one second stage carrier. Alternatively, LED dies from one first stage carrier can be transferred to multiple second stage carriers.

[0182] Furthermore, when multiple wafers comprise at least two wafers with different light emission colors, please refer to Figure 81 wherein multiple wafers with two different light emission colors are described. Wafer W4 corresponds to light emission color 1 and categories C1, C2, C3 and C4, and wafer W5 corresponds to light emission color 2 and categories C5, C6, C7 and C8. Please refer to Figure 81 wherein LED dies in the blocks of one sub-array have different light emission colors. LED dies with different light emission colors from wafers W4 and W5 are transferred to two first stage carriers, respectively, and then placed on the same blocks of the sub-array of the second stage carrier. The user can refer to the above embodiments to apply the mixing process of LED dies simultaneously to handle at least two light emission color dies from different carriers, which is not described here.

[0183] The allocation of the categories of LED dies as shown is for illustration only, and the categories can be estimated by sensing optical properties of a few LED dies on the wafer. Thus, the determination of the categories can be performed quickly without calculating a large number of optical properties of all LED dies on the wafer.

[0184] In one aspect, the present application provides a light emitting element device, comprising: a carrier; and a plurality of light emitting elements arranged on the carrier in a predetermined matrix dimension, wherein the plurality of light emitting elements are classified into a plurality of categories in a number proportion. The number proportion does not conform to a normal distribution curve (e.g., each category of light emitting elements has a proportion of 25%). In one embodiment, the categories of light emitting wavelengths can be defined in ranges of 0.5 nm, 1 nm, 2 nm, 5 nm, etc. in instrument precision or resolution. The categories of light emitting intensities can be defined in ranges of 5%, 6%, 8%, 10%, or other optical powers of optical power (Po); or 5%, 6%, 8%, 10%, or other proportions of luminous intensity (Iv).

[0185] The present application has been described herein in considerable detail in order to comply with the Patent Statutes and to provide those skilled in the art with the information needed to apply the novel principles of the present application, and to construct and use such as required. However, it is to be understood that the application is not to be limited to the precise details of the various embodiments discussed herein. Various modifications can be made to the embodiments described without departing from the spirit and scope of the application.

Claims

1. A light-emitting element device, comprising: Vehicles; and Multiple light-emitting elements are disposed on the carrier, and the multiple light-emitting elements have multiple categories and are divided into multiple matrices; in, These multiple matrices can be distinguished from each other. The light-emitting elements in these multiple matrices all have the same emission color. These categories are further classified according to emitted wavelength, emitted light intensity, or color code. Among them, the multiple matrices are two-dimensional matrices, each of which contains a central light-emitting element and several surrounding light-emitting elements, which surround the central light-emitting element; Each of the multiple matrices has a uniform mixing index. For each matrix, the uniform mixing index is the average of the differences between the class values ​​of the central light-emitting element and the class values ​​of the surrounding light-emitting elements. Among these matrices, a predetermined percentage of the matrices has a homogeneity index greater than a reference value, where the predetermined percentage is a value of not less than 60%, and the reference value is a wavelength threshold or an intensity threshold.

2. The apparatus of claim 1, wherein, The number of these multiple light-emitting elements is no less than 5,000.

3. The apparatus of claim 1, wherein, Any two of these matrices have the same number of light-emitting elements.

4. The apparatus of claim 1, wherein, Each of these matrices has a quantity distribution curve corresponding to the multiple categories, and the quantity distribution curve is a combination of multiple straight lines.

5. The apparatus of claim 4, wherein, The quantity distribution curve does not contain a single peak.

6. The apparatus of claim 4, wherein, The lower limit, upper limit, or both of the quantity distribution curve do not include a long-tailed distribution.

7. The apparatus of claim 1, wherein, Any two of these matrices have the same size.

8. The apparatus of claim 1, wherein, The multiple categories contain at least four categories.

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