Integrated assembly and method of forming an integrated assembly

Abstract

The present invention relates to integrated assemblies and methods of forming integrated assemblies. Some embodiments include an integrated assembly having an insulating mass block located above a conductive base structure. A conductive interconnect extends through the insulating mass block to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes a combination of nitrogen and a first metal. The conductive liner laterally surrounds a container-shaped conductive structure. The container-shaped conductive structure includes a second metal. A conductive plug is located within the container-shaped conductive structure. Some embodiments include methods of forming a conductive interconnect within an integrated assembly.

Description

Technical Field

[0001] Conductive interconnects suitable for use in integrated assemblies and methods of forming the conductive interconnects. Background Art

[0002] Conductive interconnects have many uses in integrated assemblies. For example, conductive interconnects can be used to couple word lines of a memory array with word line driver circuits and / or to couple bit lines of a memory array with sense amplifier circuits.

[0003] Problems may be encountered during fabrication of the conductive interconnects. For example, keyholes (i.e., voids) may be problematically formed in the conductive interconnects and may increase the resistivity (i.e., reduce the conductivity) of the conductive interconnects. As another example, it may be difficult to form conductive interconnects over copper-containing substrates due to problematic exposure of the copper to etching conditions during formation of the conductive interconnects. The etching conditions may alter the copper-containing substrate and undesirably increase resistance (i.e., reduce conductance).

[0004] It is desirable to develop new conductive interconnects and to develop new methods of forming conductive interconnects. Summary of the invention

[0005] The present invention relates to an integrated assembly, which includes: an insulating mass block, which is located above a conductive base structure; and a conductive interconnect, which extends through the insulating mass block to the upper surface of the conductive base structure, the conductive interconnect including: a conductive liner, which extends around the outer lateral periphery of the conductive interconnect, the conductive liner including a combination of nitrogen and a first metal; a container-shaped conductive structure, which is laterally surrounded by the conductive liner and includes a second metal; and a conductive plug, which is located within the container-shaped conductive structure.

[0006] The present invention also relates to an integrated assembly, which includes: a first layer, which includes a memory array and a conductive interconnect; the conductive interconnect passes through an insulating mass and directly abuts against an upper surface of a conductive base structure; the conductive interconnect includes a lining material and a container-shaped conductive structure, wherein the lining material laterally surrounds the container-shaped conductive structure; the container-shaped conductive structure defines an upwardly open container; the conductive interconnect includes a conductive plug located within the upwardly open container; a sense / access line is located within the first layer and is electrically coupled to the memory cells of the memory array and to the conductive interconnect; and a second layer, which is vertically offset from the first layer and includes a circuit electrically coupled to the sense / access line via the conductive interconnect.

[0007] The present invention also relates to a method of forming an integrated assembly, comprising: forming a structure including an insulating mass located above a conductive base structure; forming an opening extending through the insulating mass to expose an upper surface of the conductive base structure; forming a conductive liner in the opening and above the upper surface of the insulating mass, the conductive liner comprising a combination of nitrogen and a first metal; the conductive liner narrows the opening; the conductive liner has a first portion located above the upper surface of the insulating mass and has a second portion located within the opening; forming a conductive material above the conductive liner and within the narrowed opening; the conductive material comprises a second metal; selectively etching the conductive material relative to the conductive liner to remove the conductive material from above the first portion of the conductive liner and leaving a remaining portion of the conductive material located within the narrowed opening; the remaining portion of the conductive material is a container-shaped conductive structure located within the narrowed opening, the container-shaped conductive structure defining an upwardly open container; and forming a conductive plug within the upwardly open container. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figures 1A to 1C is a diagrammatic, cross-sectional side view of an assembly at an example process stage of an example method for etching and depositing metal.

[0009] Figures 2A to 2H is a diagrammatic cross-sectional side view of an integrated assembly at an example process stage of an example method for forming a conductive interconnect.

[0010] Figure 2H-1 yes Figure 2H A top view of a conductive interconnect.

[0011] Figure 3 is a diagrammatic cross-sectional side view of an example integrated assembly.

[0012] Figure 3A yes Figure 3 A diagrammatic top view of an example integrated assembly. Figure 3 The view is along the Figure 3A Line 3-3.

[0013] Figure 4 is a diagrammatic representation of an example memory array.

[0014] Figure 5 is a diagrammatic cross-sectional side view of an example multilayer assembly. DETAILED DESCRIPTION

[0015] Some embodiments include new methods of making conductive structures in which wet etching is utilized to selectively remove metal-containing materials relative to metal nitride-containing materials using an etchant containing ammonium hydroxide. The resulting conductive structures can be used as electrical interconnects. In some embodiments, the electrical interconnects can be used to couple circuits within one layer of a multilayer assembly (e.g., sense / access lines) with other circuits within another layer of the multilayer assembly (e.g., word line drivers, sense amplifiers, etc.). Example embodiments are described with reference to FIGS. 1-5.

[0016] Figures 1A to 1C Used to describe an example process in which a metal-containing material is selectively removed relative to an underlying liner and in which additional metal-containing material is then re-deposited over the liner.

[0017] refer to Figure 1A , assembly (construction, arrangement, etc.) 300 includes a semiconductor substrate 302. The substrate 302 supports an insulating layer 304, a liner 306, and a metal-containing material 308.

[0018] Base 302 is shown as including silicon (Si). Base 302 may be referred to as a semiconductor substrate. The term "semiconductor substrate" means any construction including a semiconducting material, including but not limited to bulk semiconducting material such as a semiconducting wafer (alone or in an assembly including other materials) and a layer of semiconducting material (alone or in an assembly including other materials). The term "substrate" refers to any supporting structure, including but not limited to the semiconductor substrates described above. The silicon of base 302 may be in any suitable form; and may, for example, include single crystal silicon, polycrystalline silicon, etc.

[0019] The insulating layer 304 is shown to include silicon dioxide (SiO2). In other embodiments, the insulating layer 304 may include other suitable electrically insulating compositions.

[0020] The liner 306 is shown to include tungsten nitride (WN). Tungsten nitride is an example of a material including a metal and nitrogen. In general, the liner 306 may include any suitable material including a metal and nitrogen; and in some embodiments may include one or more of TaSiN (tantalum silicon nitride), TaN (tantalum nitride), TiSiN (titanium silicon nitride), TiN (titanium nitride), WN (tungsten nitride), and WSiN (tungsten silicon nitride), among others, where the chemical formula indicates the composition and not the specific stoichiometry.

[0021] Metal-containing material 308 is shown as comprising tungsten (W), and thus comprises a common metal with liner 306. In other embodiments, the metal within metal-containing material 308 may be different than the metal within liner 306. The metal within material 308 may be any suitable metal; and in some embodiments may include one or more of tungsten (W), tantalum (Ta), titanium (Ti), etc.

[0022] refer to Figure 1B , the metal-containing material 308 is selectively removed relative to the liner 306. For purposes of interpreting the present invention and the claims thereto, a first material is considered to be "selectively removed" relative to a second material if the first material is removed faster than the second material, which may include, but is not limited to, a process that is 100% selective for the first material relative to the second material.

[0023] Selective removal of the metal-containing material 308 relative to the metal nitride-containing material 306 may be accomplished using a wet etch with an etchant comprising ammonium hydroxide (NH4OH). In some embodiments, the etchant may consist of, or consist essentially of, ammonium hydroxide and water. The concentration of ammonium hydroxide in the etchant may be at least about 2 weight percent (wt%); and in some embodiments may be in a range from about 10 wt% to less than or equal to about 90 wt%. In some embodiments, the etchant may be formed by mixing a stock solution of ammonium hydroxide (29 wt% in water) with water. For example, the ratio of water to stock solution may be 5:1, 50:1, 100:1, 2000:1, etc.

[0024] In some embodiments, the etchant and the metal-containing material 308 may be at a temperature of at least about 50° C. during the selective etching of the metal-containing material 308, at a temperature of at least about 55° C. during the selective etching of the metal-containing material 308, at a temperature of at least about 60° C. during the selective etching of the metal-containing material 308, at a temperature of at least about 65° C. during the selective etching of the metal-containing material 308, etc.

[0025] In some applications, it has been found that an increased nitrogen concentration within the liner 306 makes the liner less susceptible to attack during an etch used to remove the metal-containing layer 308. In some embodiments, the liner 306 will include a nitrogen concentration of at least about 20 atomic percent (at%), at least about 30 at%, etc. In some embodiments, the nitrogen concentration will be in a range from at least about 10 at% to less than or equal to about 75 at%.

[0026] The liner 306 may include, consist essentially of, or consist of a combination of a metal and nitrogen. Alternatively, the liner may include other components in addition to the metal and nitrogen, such as one or both of argon and boron. Argon may be included from a "flowing gas" utilized during the deposition process. Boron may be provided as B2H6 during deposition of the tungsten-containing material (or other suitable material) 308 onto the liner 306 to enhance nucleation of such material.

[0027] refer to Figure 1CTungsten (or any other suitable metal-containing material) may be deposited over the liner 306 to form a second metal-containing material 310 over the liner 306. The second metal-containing material 310 may replace at least a portion of the first metal-containing material 308.

[0028] Figures 1A to 1C The processing can be used to form conductive interconnects. Figures 2A to 2H An example process for forming an example conductive interconnect is described.

[0029] refer to Figure 2A , an assembly (construction, arrangement, etc.) 10 includes an insulating mass 12 located above a conductive base structure 14.

[0030] Conductive base structure 14 includes conductive material (base material) 16. Conductive material 16 may include any suitable conductive composition; for example, one or more of various metals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.), metal-containing compositions (e.g., metal silicides, metal nitrides, metal carbides, etc.), and / or conductively doped semiconductor materials (e.g., conductively doped silicon, conductively doped germanium, etc.). In some embodiments, conductive material 16 may include, consist essentially of, or consist of one or both of tungsten and copper.

[0031] Conductive base structure 14 extends through insulating material 18. Material 18 may comprise any suitable composition; and in some embodiments may comprise, consist essentially of, or consist of silicon dioxide.

[0032] The conductive base structure 14 has an upper surface 15 .

[0033] The insulating mass 12 comprises an upper region 20 including a first material 22 and a lower region 24 including a second material 26 .

[0034] First material 22 of upper region 20 may comprise any suitable composition; and in some embodiments may comprise, consist essentially of, or consist of silicon dioxide.

[0035] Lower region 24 is an optional region that can be used in applications where conductive substrate 14 includes copper. Material 26 of optional region 24 can include a composition suitable for blocking copper migration; and in some embodiments can include, consist essentially of, or consist of a combination of silicon and carbon (e.g., silicon carbide).

[0036] Masking material 28 is located over insulating proof-mass 12 and is used to define openings to be etched through proof-mass 12. Material 28 may include carbon-containing material 30, anti-reflective coating 32 (eg, deposited anti-reflective coating DARC), and photoresist 34.

[0037] An opening 36 has been patterned in the photoresist 34. The opening may be formed using a photolithography process.

[0038] refer to Figure 2B , extending the opening 36 through the insulating mass 12 to expose the upper surface 15 of the base structure 14, and then removing the masking material 28 ( Figure 2A ) to leave an exposed upper surface 39 of the insulating mass 12.

[0039] In the embodiment shown, only a portion of the upper surface 15 of the base structure 14 is exposed within the opening 36 , and other portions 17 of the upper surface 15 remain covered by the material 26 of the insulating mass 12 .

[0040] The illustrated opening has an arcuate sidewall 37. In other embodiments, the sidewalls may have other configurations; and may be straight, tapered, etc. The illustrated arcuate sidewalls may present particular difficulties to conventional manufacturing processes because the arcuate sidewalls may problematically result in seams (keyholes) or other undesirable structures. Therefore, the arcuate sidewalls 37 are utilized to demonstrate the particular advantages that may be achieved utilizing the processes described herein. However, it should be understood that the processes described herein may be applicable to other configurations than those specifically illustrated in the present invention.

[0041] refer to Figure 2C , a conductive liner 38 is formed within opening 36 and above upper surface 39 of insulating mass 12. Conductive liner 38 includes conductive liner material 40. The conductive liner material may include any suitable composition; and in some embodiments may include the conductive liner material described above as being suitable for Figure 1A Thus, liner material 40 may include, consist essentially of, or consist of a combination of nitrogen and the first metal. In some embodiments, liner material 40 may include one or more of TaSiN, TaN, TiSiN, TiN, WN, and WSiN; wherein the chemical formula indicates the composition and not a particular stoichiometry. In some embodiments, liner material 40 may additionally include one or both of boron and argon.

[0042] The conductive liner 38 narrows the opening 36. The conductive liner has a first portion 41 located above the upper surface 39 of the insulating mass 12 and has a second portion 43 located within the opening 36.

[0043] In the illustrated embodiment, the conductive liner 38 does not cover the entire upper surface 15 of the conductive base structure 14. This may result from poor coverage of the liner material 40 on the surface 15 at the bottom of the opening 36 (which may occur if the opening 36 has a high aspect ratio). The illustrated embodiment shows the liner 38 in a configuration where the liner does not completely cover the bottom of the opening 36 in order to emphasize that the processing described herein is suitable even in applications where the upper surface of the base 16 remains exposed within the opening 36 after the liner 38 is formed. In other embodiments, the liner 38 may completely cover the surface 15 at the bottom of the opening 36.

[0044] refer to Figure 2D , a conductive material 42 is formed over the conductive liner 38 and within the narrowed opening 36. The conductive material 42 may include, consist essentially of, or consist of one or more metals; and in some embodiments may include the metals described above as being suitable for use in the embodiment of the present invention. Figure 1A The metal within metal-containing conductive material 42 may be referred to as a second metal to distinguish it from the first metal within liner 38. The first and second metals may be the same as each other (e.g., both may include tungsten), or may be different from each other (e.g., the first metal of liner 38 may include tungsten and the second metal of conductive material 42 may include titanium).

[0045] Conductive material 42 is shown as poorly filling opening 36, so that seams (keyholes, voids) 44 remain. In conventional manufacturing processes, seams 44 can be problematic. The process described herein ultimately opens the seams and then fills the seams with conductive material to illuminate the seams, and therefore can be advantageous relative to conventional manufacturing processes.

[0046] refer to Figure 2E , the conductive material 42 is selectively etched relative to the conductive liner 38. This selective etching can be performed using the above relative to Figure 1B The selective etching removes conductive material 42 from over first portion 41 of liner 38 , while leaving a remaining portion of conductive material 42 within opening 36 .

[0047] Figure 2E Etched open seam 44 ( Figure 2D ), and thus leaves the remaining portion of the conductive material 42 as a container-shaped conductive structure 48. The container-shaped shape of the conductive structure 48 defines a container 50 that is open upward.

[0048] In the illustrated embodiment, container structure 48 has a bottom surface 49 that directly contacts upper surface 15 of conductive base structure 14 .

[0049] refer to Figure 2F, a conductive liner 52 is formed over liner 38 and within opening 36. Liner 52 includes liner material 54. In some embodiments, liners 38 and 52 may be referred to as first and second conductive liners, respectively; and liner materials 40 and 54 may be referred to as first and second conductive liner materials, respectively.

[0050] The second liner material 54 may include any suitable conductive composition; for example, one or more of various metals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.), metal-containing compositions (e.g., metal silicides, metal nitrides, metal carbides, etc.), and / or conductively doped semiconductor materials (e.g., conductively doped silicon, conductively doped germanium, etc.). In some embodiments, the second liner material 54 may include a metal and nitrogen, and may include any of the compositions described above as being suitable for the first liner material 40. The second liner material 54 may include the same composition as the first liner material 40 (e.g., both may include tungsten nitride), or may include a different composition than the first liner material 40 (e.g., the first liner material 40 may include tungsten nitride, and the second liner material 54 may include titanium nitride).

[0051] The second liner 52 may be omitted in some embodiments.

[0052] The second liner 52 narrows the upwardly open container 50 of the container-shaped structure 48. In some embodiments, the second liner 52 can be formed to be very thin, and can, for example, have a thickness less than or equal to about The second liner 52 may form a uniform surface across materials 40 and 42 for subsequent deposition of another conductive material (specifically, see below). Figure 2G Conductive material 56 as described).

[0053] refer to Figure 2G , a conductive material 56 is formed over liner 52 and within opening 36. Conductive material 56 may include any suitable conductive composition; for example, one or more of various metals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.), metal-containing compositions (e.g., metal silicides, metal nitrides, metal carbides, etc.), and / or conductively doped semiconductor materials (e.g., conductively doped silicon, conductively doped germanium, etc.). In some embodiments, conductive material 56 may include one or more metals and / or metal-containing compositions; and may, for example, include, consist essentially of, or consist of one or more of tantalum, titanium, tungsten, tantalum nitride, titanium nitride, tungsten nitride, etc.

[0054] refer to Figure 2H, construction 10 is subjected to planarization (e.g., chemical mechanical polishing, CMP) to form a planarized upper surface 57 extending across materials 22, 40, 42, 54, and 56. Materials 40, 42, 54, and 56 together form a conductive interconnect 58 extending through insulating mass 12 to upper surface 15 of conductive base structure 14. Planarization patterns conductive material 56 into conductive plugs 60 within upwardly open receptacles 50 of receptacle-shaped structure 48.

[0055] Figure 2H-1 exhibit Figure 2H 1. A top view of a region of assembly 10 at a processing stage of FIG. Figure 2H-1 The top view of FIG. 5 shows that the conductive liner 38 extends around the outer lateral perimeter of the conductive interconnect 58 and laterally surrounds the container-shaped conductive structure 48. In the illustrated embodiment, the conductive interconnect 58 is arranged along Figure 2H-1 In other embodiments, the conductive interconnect may be arranged along Figure 2H-1 The top view of the image has other shapes; and for example, it can be square, rectangular, oval, etc.

[0056] Conductive interconnects 58 may be used to electrically couple circuit components to each other within an integrated circuit. Figure 3 Example applications of conductive interconnects 58 are described.

[0057] Figure 3An assembly (arrangement, construction, etc.) 100 is shown that includes a memory cell 62 of a memory array 64. The memory cell is diagrammatically illustrated as a box with a dashed boundary. The memory cell 62 may be any suitable memory cell; and in some embodiments may include a phase change material (PCM) as a programmable material (e.g., may include a bidirectional memory material, and specifically may include a chalcogenide). For example, the programmable material may include one or more of germanium (Ge), antimony (Sb), tellurium (Te), and indium (In). In a particular embodiment, the programmable material may, for example, include, consist essentially of, or consist of GeSbTe or InGeTe, where the chemical formula indicates the composition rather than specifying a particular stoichiometry. In some embodiments, the memory cell may include a programmable material configured for use in a self-select device; for example, a chalcogenide material may serve as both a storage element and a selection device. Chalcogenides may be used alone in a self-select device, or may be utilized in combination with another composition. Example self-select PCM devices (wherein a PCM device is a device including phase change material) are described in U.S. Pat. Nos. 8,847,186 (Redaelli et al.) and 10,134,470 (Tortorelli et al.), which list Micron Technology, Inc. as assignee. In some embodiments, memory cell 62 may include a programmable material in combination with a select device rather than in a self-select configuration.

[0058] Memory cells 62 are separated from one another by regions including insulating material 22 (eg, by regions including silicon dioxide).

[0059] The word line (access line) 66 is relative to Figure 3 6. The cross-sectional view of FIG. 6 extends into and out of the page. The word line includes a conductive word line material 68. The word line material 68 may include any suitable conductive composition; for example, one or more of various metals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.), metal-containing compositions (e.g., metal silicides, metal nitrides, metal carbides, etc.), and / or conductively doped semiconductor materials (e.g., conductively doped silicon, conductively doped germanium, etc.).

[0060] A bit line (sense line, digit line) 70 extends across the memory cell 62 and across the conductive interconnect 58; and extends orthogonally relative to the direction of the word line 66. The bit line 70 includes a conductive bit line material 72. The conductive bit line material may include any suitable conductive composition; for example, one or more of various metals (e.g., titanium, tungsten, cobalt, nickel, platinum, ruthenium, etc.), metal-containing compositions (e.g., metal silicides, metal nitrides, metal carbides, etc.), and / or conductively doped semiconductor materials (e.g., conductively doped silicon, conductively doped germanium, etc.).

[0061] Figure 3 The illustration indicates that word line 66 is located below memory cell 62 and bit line 70 is located above the memory cell. In other applications, the relative orientation of the word lines and bit lines may be reversed so that the bit lines are located below the memory cells and the word lines are located above the memory cells. The terms "access / sense line", "word line / bit line", "bit line / word line", and "sense / access line" may be used herein to generically refer to bit lines and word lines in the context in which the indicated structure may be either a word line or a bit line.

[0062] Figure 3 The conductive interconnect 58 can be viewed as being along Figure 3 The cross-section of includes a first side 73 and a second side 75 in opposing relationship with the first side. The memory cells 62 adjacent to (or along) the first side 73 can be considered to correspond to the first set 74 of memory cells of the memory array 64, and the memory cells 62 adjacent to (or along) the second side 75 can be considered to correspond to the second set 76 of memory cells of the memory array 64. The bit line 70 is located above the memory cells 62 of the first set 74 and the second set 76, and is located above the conductive interconnect 58; and is electrically coupled to the memory cells 62 of the first set 74 and the second set 76, and is electrically coupled to the conductive interconnect 58.

[0063] Figure 3 Optional copper barrier material 26 (not shown but may be provided in embodiments where base structure 14 comprises copper) Figure 2A ).

[0064] Figure 3A A top view of assembly 100 is shown. Figure 3A The view is not relative to Figure 3 The views are in proportion and utilize the assembly 100 with Figure 3 In any case, Figure 3 The cross section can be understood as roughly along Figure 3A Line 3-3.

[0065] Figure 3A A top view of Figure 3The conductive interconnect 58 is one of a plurality of substantially identical conductive interconnects; wherein the term "substantially identical" means identical within reasonable tolerances of fabrication and measurement. The conductive interconnects are arranged along a line, wherein the line is arranged along a line relative to Figure 3 The plane of the cross section will extend in directions both into the page and out of the page.

[0066] It should be understood that although Figure 3 The cross section of FIG. 5 includes only one of the conductive interconnects 58 between the illustrated first and second sets (74, 76) of memory cells, but in other embodiments, there may be multiple interconnects along the same line. Figure 3 Therefore, although Figure 3A A single row of interconnects 58 is shown, but in other embodiments, there may be multiple rows of such interconnects (e.g., interconnects 58 may be arranged in a matrix). Also, it should be understood that Figure 3A The illustrated interconnect 58 may represent a large number of substantially identical interconnects. For example, in some embodiments, there may be hundreds, thousands, hundreds of thousands, millions, etc. of conductive interconnects 58.

[0067] Figure 3 The bit line 70 is one of a plurality of bit lines formed across the memory array 64, such as Figure 3A . The illustrated bit line 70 may represent a large number of substantially identical bit lines. For example, in some embodiments, there may be hundreds, thousands, hundreds of thousands, millions, etc. of bit lines 70. In the illustrated embodiment, each of the bit lines extends across one of the illustrated conductive interconnects 58. The conductive interconnects 58 are arranged at Figure 3A , shown in dashed view to indicate that it is located below the bit line 70.

[0068] Figure 3 and 3A Memory array 64 may have any suitable configuration. Figure 4 Schematically illustrates an example configuration of a memory array 64. This configuration includes memory cells 62 at the intersections where word lines (WL1-WL4) cross bit lines (BL1-BL4). Each of the memory cells is uniquely addressed by a combination of one of the word lines and one of the bit lines.

[0069] Figure 3 and 3A The conductive interconnect 58 may be used to enable circuits from one layer to couple with circuits from another layer within a multilayer stack. For example, Figure 5 A multilayer stack 150 is shown having three layers 160, 162, and 164 in a vertical stack. Figure 5The vertical stacked arrangement of can be extended upward to include additional layers. Layers 160, 162, and 164 can be viewed as examples of tiers stacked one above the other. The tiers can be within different semiconductor dies (wafers), or at least two of the tiers can be within the same semiconductor die. Bottom layer 160 can include control circuitry and / or sensing circuitry (e.g., can include word line drivers, sense amplifiers, etc.; and can include CMOS circuits, as shown). Upper layers 162 and 164 can include memory arrays, such as, Figure 3 and 3A The memory arrays 64 of the various layers may be identical to each other (e.g., may all be arrays of PCM devices), or may be different relative to each other (e.g., some may be arrays of PCM devices and others may not). Also, one or more of the upper layers may include control circuitry or other logic circuitry.

[0070] Conductive interconnects 58 are illustrated as enabling connections from circuits of layers 162 and 164 to circuits of layer 160, with such connections being shown diagrammatically with dashed arrows 161. Sense / access lines 70 associated with memory array 64 within layer 162 (which may be referred to as a memory layer) may be electrically coupled to circuits associated with layer 160 via connections 161. For example, bit lines associated with memory array 64 may be electrically coupled to sense amplifiers within layer 160 via connections 161. As another example, word lines associated with memory array 64 may be electrically coupled to word line drivers within layer 160 via connections 161.

[0071] The assemblies and structures discussed above may be used within integrated circuits (where the term "integrated circuit" means an electronic circuit supported by a semiconductor substrate); and may be incorporated into electronic systems. Such electronic systems may be used, for example, in memory modules, device drivers, power modules, communication modems, processor modules, and application-specific modules, and may include multi-layer, multi-chip modules. The electronic systems may be any of a wide range of systems (e.g., cameras, wireless devices, displays, chipsets, set-top boxes, gaming devices, lighting devices, vehicles, clocks, televisions, mobile phones, personal computers, automobiles, industrial control systems, aircraft, etc.).

[0072] Unless otherwise specified, the various materials, substances, compositions, etc. described herein may be formed using any suitable method now known or yet to be developed, including, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etc.

[0073] The terms "dielectric" and "insulating" may be used to describe materials with insulating electrical properties. The terms are considered synonymous in this disclosure. The use of the term "dielectric" in some instances and the term "insulating" (or "electrically insulating") in other instances is intended to provide language changes within this specification to simplify preamble basis within the appended claims and is not intended to indicate any significant chemical or electrical differences.

[0074] The terms "electrically connected" and "electrically coupled" may both be used in the present invention. The terms are considered synonymous. The use of one term in some instances and another term in other instances is intended to provide language changes within this specification to simplify the preamble basis within the appended claims.

[0075] The specific orientations of the various embodiments in the drawings are for illustrative purposes only, and the embodiments may be rotated relative to the orientation shown in some applications. The description provided herein and the appended claims are directed to any structure having the described relationships between the various features, regardless of whether the structure is in a specific orientation of the drawings or rotated relative to such orientation.

[0076] The cross-sectional views illustrated in the accompanying drawings show only features within the plane of the cross-section and, to simplify the drawing, do not show material behind the plane of the cross-section unless otherwise indicated.

[0077] When a structure is referred to above as being "on," "adjacent," or "against" another structure, it may be directly on the other structure or there may also be intervening structures. In contrast, when a structure is referred to as being "directly on," "directly adjacent," or "directly against" another structure, there are no intervening structures. The terms "directly below," "directly above," and the like do not indicate direct physical contact (unless expressly stated otherwise), but rather indicate vertical alignment.

[0078] A structure (eg, layer, material, etc.) may be referred to as "vertically extending" to indicate that the structure extends generally upward from an underlying base (eg, substrate). A vertically extending structure may extend generally orthogonally relative to an upper surface of the base, or not.

[0079] Some embodiments include an integrated assembly having an insulating mass located above a conductive base structure. A conductive interconnect extends through the insulating mass to an upper surface of the conductive base structure. The conductive interconnect includes a conductive liner extending around an outer lateral periphery of the interconnect. The conductive liner includes a combination of nitrogen and a first metal. The conductive liner laterally surrounds a container-shaped conductive structure. The container-shaped conductive structure includes a second metal. A conductive plug is located within the container-shaped conductive structure.

[0080] Some embodiments include an integrated assembly including a first layer having a memory array and a conductive interconnect. The conductive interconnect passes through an insulating mass and directly against an upper surface of a conductive base structure. The conductive interconnect includes a liner material and a container-shaped conductive structure, wherein the liner material laterally surrounds the container-shaped conductive structure. The container-shaped conductive structure defines an upwardly open container. The conductive interconnect includes a conductive plug located within the upwardly open container. Sense / access lines are located within the first layer and are electrically coupled to memory cells of the memory array and to the conductive interconnect. A second layer is vertically offset from the first layer and includes circuitry electrically coupled to the sense / access lines via the conductive interconnect.

[0081] Some embodiments include a method of forming an integrated assembly. A construction is formed that includes an insulating mass located above a conductive base structure. An opening is formed to extend through the insulating mass to expose an upper surface of the conductive base structure. A conductive liner is formed within the opening and above the upper surface of the insulating mass. The conductive liner includes a combination of nitrogen and a first metal. The conductive liner narrows the opening. A conductive material is formed above the conductive liner and within the narrowed opening. The conductive material includes a second metal. A conductive material is selectively etched relative to the conductive liner to remove the conductive material from above the upper surface of the insulating mass leaving a remaining portion of the conductive material within the narrowed opening. The remaining portion of the conductive material is a container-shaped conductive structure located within the narrowed opening. The container-shaped conductive structure defines an upwardly open container. A conductive plug is formed within the upwardly open container.

[0082] In compliance with the statute, the subject matter disclosed herein has been described in language more or less specific with respect to structural and methodological features. However, it is to be understood that since the means disclosed herein include example embodiments, the claims are not limited to the specific features shown and described. Therefore, the claims are to be given the full scope by the literal terms and appropriately interpreted in accordance with the doctrine of equivalents.

Claims

1. An integrated assembly comprising: an insulating mass located above the conductive base structure; and a conductive interconnect extending through the insulating mass to an upper surface of the conductive base structure, the conductive interconnect comprising: a conductive liner extending around an outer lateral perimeter of the conductive interconnect, the conductive liner comprising a combination of nitrogen and a first metal; a container-shaped conductive structure, which is laterally surrounded by the conductive liner and includes a second metal; a conductive plug located in the container-shaped conductive structure; and A liner is located between the container-shaped conductive structure and the conductive plug.

2. The integrated assembly of claim 1, wherein the conductive liner comprises one or more of TaSiN, TaN, TiSiN, TiN, WN, and WSiN, wherein chemical formulas indicate compositions and not specific stoichiometry.

3. The integrated assembly of claim 1, wherein the first metal and the second metal are the same as one another.

4. The integrated assembly of claim 3, wherein the first metal and the second metal are tungsten.

5. The integrated assembly of claim 4, wherein the conductive plug comprises tungsten.

6. The integrated assembly of claim 1, wherein the first metal and the second metal are different from each other.

7. The integrated assembly of claim 1, wherein a bottom surface of the container-shaped conductive structure directly contacts the upper surface of the conductive base structure.

8. The integrated assembly of claim 1, wherein the container-shaped conductive structure is configured to include an upwardly open container.

9. The integrated assembly of claim 1 wherein the liner comprises the same composition as the conductive liner.

10. The integrated assembly of claim 1 wherein the liner comprises a different composition than the conductive liner.

11. The integrated assembly of claim 1, wherein the conductive base structure comprises tungsten or copper.

12. An integrated assembly according to claim 1, wherein the conductive interconnect has a first side and has a second side in a relative relationship with the first side; and the integrated assembly includes, along a cross-section, a first set of memory cells of a memory array along the first side of the conductive interconnect and a second set of memory cells of the memory array along the second side of the conductive interconnect; and wherein a sense / access line is located above the memory cells of the first set and the second set and above the conductive interconnect; and wherein the sense / access line is electrically coupled to the memory cells of the first set and the second set and to the conductive interconnect.

13. The integrated assembly of claim 12, wherein the memory cell comprises a chalcogenide as a programmable material.

14. An integrated assembly comprising: A first layer including a memory array and conductive interconnects that pass through the insulating mass and directly abut against an upper surface of the conductive base structure; The conductive interconnect comprises a lining material and a container-shaped conductive structure, wherein the lining material laterally surrounds the container-shaped conductive structure; the container-shaped conductive structure defines an upwardly open container; the conductive interconnect comprises a conductive plug located in the upwardly open container; sense / access lines located within the first layer and electrically coupled to memory cells of the memory array and to the conductive interconnects; and A second layer is vertically separated from the first layer and includes circuitry electrically coupled to the sense / access lines via the conductive interconnects.

15. The integrated assembly of claim 14, wherein the conductive interconnect is one of a plurality of substantially identical conductive interconnects.

16. The integrated assembly of claim 15, wherein the sense / access line is one of a number of substantially identical sense / access lines.

17. The integrated assembly of claim 14, wherein the conductive base structure comprises tungsten or copper.

18. An integrated assembly according to claim 14, wherein the lining material is a first lining material, and the integrated assembly further includes a second lining material located within the upwardly open container and narrowing the upwardly open container; the conductive plug is located within the narrowed upwardly open container.

19. The integrated assembly of claim 18, wherein the second liner material comprises the same composition as the first liner material.

20. The integrated assembly of claim 18, wherein the second liner material comprises a different composition than the first liner material.

21. The integrated assembly of claim 14, wherein: The liner material comprises a combination of nitrogen and a first metal; and The container-shaped structure includes a second metal.

22. The integrated assembly of claim 21, wherein the first metal and the second metal are the same as one another.

23. The integrated assembly of claim 22, wherein the first metal and the second metal are tungsten.

24. The integrated assembly of claim 23, wherein the conductive plug comprises tungsten.

25. The integrated assembly of claim 21, wherein the first metal and the second metal are different from each other.

26. The integrated assembly of claim 14, wherein: The second layer is located below the first layer; The sense / access line is one of a bit line or a word line; and The circuit includes one of a sense amplifier circuit electrically coupled to the bit line via the conductive interconnect or a word line driver circuit electrically coupled to the word line via the conductive interconnect.

27. A method of forming an integrated assembly, comprising: forming a construction comprising an insulating mass positioned above a conductive base structure; forming an opening extending through the insulating mass to expose an upper surface of the conductive base structure; forming a conductive liner within the opening and above the upper surface of the insulating mass, the conductive liner comprising a combination of nitrogen and a first metal; the conductive liner narrowing the opening; the conductive liner having a first portion located above the upper surface of the insulating mass and having a second portion located within the opening; forming a conductive material over the conductive liner and within the narrowed opening; The conductive material includes a second metal; selectively etching the conductive material relative to the conductive liner to remove the conductive material from above the first portion of the conductive liner and leave a remaining portion of the conductive material within the narrowed opening; the remaining portion of the conductive material is a container-shaped conductive structure within the narrowed opening, the container-shaped conductive structure defining an upwardly open container; and A conductive plug is formed in the upwardly open container.

28. The method of claim 27, wherein the conductive liner comprises a conductive liner material comprising one or more of TaSiN, TaN, TiSiN, TiN, WN, and WSiN, wherein a chemical formula indicates composition and not a specific stoichiometry; wherein a concentration of nitrogen within the conductive liner material is at least 10 atomic percent (at %); and wherein the selective etching utilizes an etchant comprising ammonium hydroxide.

29. The method of claim 28, wherein the conductive liner comprises tungsten nitride, and wherein the conductive material comprises tungsten.

30. The method of claim 28, wherein the conductive liner material further comprises one or both of argon and boron.

31. The method of claim 27, wherein the conductive base structure comprises tungsten or copper.

32. The method of claim 27, wherein the conductive liner is a first conductive liner, and the method further comprises forming a second conductive liner within the upwardly opening container to narrow the upwardly opening container; and wherein forming the conductive plug comprises forming the conductive plug within the narrowed upwardly opening container.

33. The method of claim 27, wherein the conductive liner, the conductive material, and the conductive plug together form a conductive interconnect within a first layer of a multilayer structure, and the method further comprises coupling the conductive interconnect with a circuit along a second layer of the multilayer structure; and wherein the second layer is vertically separated from the first layer.

34. A method according to claim 33, wherein the first layer includes a memory array and includes sense / access lines associated with the memory array; and the method further includes coupling the conductive interconnect with one of the sense / access lines, and coupling the one of the sense / access lines to the circuit along the second layer via the conductive interconnect.

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