Display device and method of manufacturing the same

Abstract

The present invention discloses a display device and a method for manufacturing the display device in order to minimize film modification caused by external light, and provides a method for manufacturing the display device, comprising: a step of forming an insulating inorganic film on a substrate; a step of forming a display element above the insulating inorganic film; a step of forming a first sealed inorganic film on the display element; a step of irradiating light of an ultraviolet (UV) wavelength onto the first sealed inorganic film; and a step of forming a sealed organic film on the first sealed inorganic film.

Description

Technical Field

[0001] The present disclosure relates to a display device and a method for manufacturing the same, and more particularly, to a display device and a method for manufacturing the same in which film modification caused by external light is minimized. Background Art

[0002] Among display devices, organic light emitting display devices have advantages of not only wide viewing angle and excellent contrast but also fast response speed, and therefore have attracted much attention as next-generation display devices.

[0003] Generally, an organic light-emitting display device has thin film transistors and organic light-emitting elements formed on a substrate, and the organic light-emitting elements work by self-luminescence. Such an organic light-emitting display device is used as a display part of both small products such as mobile phones and large products such as televisions.

[0004] Organic light-emitting elements are susceptible to moisture and oxygen. Therefore, a sealing layer may be provided on the organic light-emitting element to seal the organic light-emitting element, thereby protecting the organic light-emitting element from external influences. The sealing layer has a multilayer structure in which organic films and inorganic films are alternately stacked. Summary of the invention

[0005] However, such conventional display devices have a problem in that the inorganic film included in the sealing layer undergoes film modification due to external light, which results in poor optical properties of the organic light-emitting element and reduced reliability of the display device.

[0006] The present disclosure is intended to solve various problems including the above-mentioned problems, and aims to provide a display device and a manufacturing method thereof in which film modification caused by external light is minimized. However, such a subject is exemplary, and the scope of the present disclosure is not limited thereto.

[0007] According to one aspect of the present disclosure, there is provided a method for manufacturing a display device, comprising: a step of forming an insulating inorganic film on a substrate; a step of forming a display element above the insulating inorganic film; a step of forming a first sealed inorganic film on the display element; a step of irradiating light of an ultraviolet (UV) wavelength onto the first sealed inorganic film; and a step of forming a sealed organic film on the first sealed inorganic film.

[0008] According to this embodiment, the method for manufacturing the display device may further include: forming a second encapsulated inorganic film on the encapsulated organic film; and irradiating light having an ultraviolet (UV) wavelength onto the second encapsulated inorganic film.

[0009] According to this embodiment, the step of irradiating the first sealed inorganic film with light of ultraviolet (UV) wavelength may be to generate hydrogen (H2) in the first sealed inorganic film. 2) steps.

[0010] According to the present embodiment, the first encapsulating inorganic film may have a smaller hydrogen (H) group content than the insulating inorganic film.

[0011] According to this embodiment, the first encapsulated inorganic film may include silicon nitride (SiN X ) and silicon oxynitride (SiO X N Y ) at least one of ).

[0012] According to this embodiment, after the step of irradiating the first sealed inorganic film with light having an ultraviolet (UV) wavelength, the first sealed inorganic film may satisfy the following reaction formula 1.

[0013] [Reaction 1]

[0014] NH x +Si-H y →NH x-1 +Si-H y-1 +H 2

[0015] Si+N→Si-N

[0016] According to this embodiment, the first encapsulated inorganic film may include silicon oxide (SiO X ).

[0017] According to this embodiment, after the step of irradiating the first sealed inorganic film with light having an ultraviolet (UV) wavelength, the first sealed inorganic film may satisfy the following reaction formula 2.

[0018] [Reaction 2]

[0019] OH x +Si-H y →OH x-1 +Si-H y-1 +H 2

[0020] Si+O→Si-O

[0021] According to the present embodiment, after the step of irradiating the first sealed inorganic film with light having an ultraviolet (UV) wavelength, the transmittance of the first sealed inorganic film in the ultraviolet wavelength region may be increased.

[0022] According to the present embodiment, the step of irradiating the first sealed inorganic film with light having an ultraviolet (UV) wavelength may be performed using a lamp emitting light having an ultraviolet (UV) wavelength or a plasma method.

[0023] According to other viewpoints of the present disclosure, a display device is provided, comprising: a substrate; a pixel circuit layer, arranged on the substrate and including an insulating inorganic film and a thin film transistor; a display element, electrically connected to the thin film transistor; and a thin film sealing layer, arranged on the display element and including a first sealed inorganic film and a sealed organic film, wherein the first sealed inorganic film has a lower hydrogen (H) group content than the insulating inorganic film.

[0024] According to this embodiment, the thin film sealing layer may further include: a second sealed inorganic film disposed on the sealed organic film, and the second sealed inorganic film has a lower hydrogen (H) group content than the insulating inorganic film.

[0025] According to this embodiment, the insulating inorganic film and the first encapsulating inorganic film may include silicon nitride (SiN X ) and silicon oxynitride (SiO X N Y ) at least one of ).

[0026] According to the present embodiment, the first encapsulated inorganic film may have fewer NH bonds and Si—H bonds than the insulating inorganic film.

[0027] According to the present embodiment, the first encapsulated inorganic film may have more Si—N bonds than the insulating inorganic film.

[0028] According to this embodiment, the insulating inorganic film and the first encapsulating inorganic film may include silicon oxide (SiO X ).

[0029] According to the present embodiment, the first encapsulated inorganic film may have fewer OH bonds and Si—H bonds than the insulating inorganic film.

[0030] According to this embodiment, the first encapsulated inorganic film may have more Si—O bonds than the insulating inorganic film.

[0031] According to the present embodiment, the transmittance of the first encapsulating inorganic film may be higher than the transmittance of the insulating inorganic film in an ultraviolet (UV) region.

[0032] According to this embodiment, the display element may include: a pixel electrode; a counter electrode located above the pixel electrode; and an intermediate layer including a light-emitting layer between the pixel electrode and the counter electrode, and the thin film sealing layer is arranged on the counter electrode to completely seal the display element from the outside.

[0033] Other aspects, features, and advantages besides the foregoing will be apparent from the following detailed description, claims, and drawings for implementing the disclosure.

[0034] Such general and specific aspects may be implemented using a system, a method, a computer program, or any combination of systems, methods, and computer programs.

[0035] (Effect of Publicity)

[0036] According to an embodiment of the present disclosure constructed as above, a display device and a method for manufacturing the same in which film modification caused by external light is minimized can be realized. Of course, the scope of the present disclosure is not limited to such effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 1 is a perspective view schematically showing a display device 1 according to an embodiment of the present disclosure.

[0038] Figure 2 FIG. 1 is a plan view schematically showing a display device 1 according to an embodiment of the present disclosure.

[0039] Figure 3 is an equivalent circuit diagram of a pixel that may be included in the display device 1 according to an embodiment of the present disclosure.

[0040] Figures 4 to 7 is a cross-sectional view schematically showing a part of a manufacturing process of the display device 1 according to an embodiment of the present disclosure.

[0041] Figure 8 is a cross-sectional view schematically showing a portion of the display device 1 manufactured by the manufacturing method according to an embodiment of the present disclosure.

[0042] Fig. 9 This is a table comparing components of an inorganic film of a display device 1 according to an embodiment of the present disclosure before and after light irradiation treatment (solar treatment) is performed.

[0043] Fig.10 1 is a graph showing changes in transmittance before and after a light irradiation treatment (Solar Treatment) is performed on an inorganic film of a display device 1 according to an embodiment of the present disclosure.

[0044] Description of Reference Numerals

[0045] 1: Display device

[0046] 100: Substrate

[0047] 110: Insulating inorganic film

[0048] 112: Buffer layer

[0049] 114: Gate insulation layer

[0050] 116: Interlayer insulation layer

[0051] 180: Insulating organic film

[0052] 190: Pixel Definition Film

[0053] 210: Pixel electrode

[0054] 220: Middle layer

[0055] 230: Counter electrode

[0056] 300: Film sealing layer

[0057] 310: The first sealed inorganic membrane

[0058] 320: Sealed organic membrane

[0059] 330: Second sealed inorganic membrane DETAILED DESCRIPTION

[0060] The present disclosure is susceptible to various modifications and may have a variety of embodiments, specific embodiments of which are illustrated in the drawings and described in detail in the detailed description. Figure 1 The effects and features of the present disclosure and methods for achieving them will become clear from the detailed embodiments described below. However, the present disclosure is not limited to the embodiments disclosed below, and can be implemented in various forms.

[0061] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the attached drawings. When describing with reference to the drawings, the same or corresponding components are given the same reference numerals, and repeated description thereof is omitted.

[0062] In the following embodiments, the terms "first" and "second" are used for the purpose of distinguishing one constituent element from other constituent elements, and are not intended to be limiting.

[0063] In the following embodiments, an expression in the singular includes an expression in the plural unless clearly indicated differently in the context.

[0064] In the following embodiments, terms such as including or having mean that the features or constituent elements described in the specification exist, and do not preclude the possibility of adding one or more other features or constituent elements.

[0065] In the following embodiments, when a film, region, constituent element, etc. is expressed as existing above or on other parts, it includes not only the case where it exists directly above other parts, but also the case where other films, regions, constituent elements, etc. are interposed.

[0066] In the drawings, the dimensions of the components may be exaggerated or reduced for convenience of explanation. For example, the dimensions and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and the present disclosure is not necessarily limited to those shown in the drawings.

[0067] When an embodiment can be implemented in different ways, a specific process sequence can also be performed in a sequence different from the described sequence. For example, two processes described successively can also be performed substantially simultaneously, or in a sequence opposite to the described sequence.

[0068] In the present specification, "A and / or B" means A, or means B, or means A and B. Also, "at least one of A and B" means A, or means B, or means A and B.

[0069] In the following embodiments, when it is expressed that a film, region, constituent element, etc. is connected, it includes the case where the film, region, constituent element is directly connected and / or the case where the film, region, constituent element is indirectly connected with other films, regions, constituent elements in the middle. For example, in this specification, when it is expressed that a film, region, constituent element, etc. is electrically connected, it includes the case where the film, region, constituent element, etc. is directly electrically connected and / or the case where the film, region, constituent element, etc. is indirectly electrically connected with other films, regions, constituent elements, etc. in the middle.

[0070] Hereinafter, as a display device 1 according to an embodiment of the present disclosure, an organic light emitting display device is described as an example, but the display device of the present disclosure is not limited thereto. As another embodiment, the display device 1 of the present disclosure may be a display device such as an inorganic light emitting display device (Inorganic Light Emitting Display or inorganic EL display device) or a quantum dot light emitting display device (Quantum dot Light Emitting Display). For example, the light emitting layer of the display element provided in the display device 1 may contain organic matter, or contain inorganic matter, or contain quantum dots, or contain organic matter and quantum dots, or contain inorganic matter and quantum dots.

[0071] Figure 1 It is a perspective view schematically showing a display device 1 according to an embodiment of the present disclosure.

[0072] Reference Figure 1 The display device 1 includes a display area DA where an image is presented and a non-display area NDA where no image is presented. The display device 1 can provide an image by using light emitted from a plurality of pixels P arranged in the display area DA.

[0073] Although Figure 1The display device 1 in which the display area DA is a quadrilateral is shown in FIG. 1 , but the present disclosure is not limited thereto. The shape of the display area DA may be a circle, an ellipse, or a polygon such as a triangle or a pentagon. Figure 1 The display device 1 shows a flat panel display device in a planar form, but the display device 1 can of course be implemented in various forms such as a flexible, foldable, and rollable display device.

[0074] Figure 2 FIG. 1 is a plan view schematically showing a display device 1 according to an embodiment of the present disclosure.

[0075] Reference Figure 2 The display device 1 includes a plurality of pixels P arranged in a display area DA. The plurality of pixels P may include display elements such as organic light emitting elements OLED. Each pixel P may emit, for example, red, green, blue or white light through the organic light emitting element OLED. The pixel P referred to in this specification may be understood as a pixel that emits light of any color of red, green, blue and white as described above.

[0076] The display area DA may be covered by the thin film sealing layer 300 and protected from external air or moisture. The thin film sealing layer 300 may be integrally arranged to correspond to the entire surface of the display area DA, and extend toward the edge side of the substrate 100 with a portion thereof being located on the non-display area NDA. The thin film sealing layer 300 may be arranged to cover a portion or all of the first scan drive circuit 120, the second scan drive circuit 130, the data drive circuit 150, the first power supply wiring 160, and the second power supply wiring 170 described later. The organic light emitting element OLED has the characteristic of being easily affected by external factors such as moisture and oxygen, and the reliability of the display device 1 may be improved by sealing the organic light emitting element OLED with the thin film sealing layer 300.

[0077] Each pixel P may be electrically connected to a peripheral circuit disposed in the non-display area NDA, in which a first scan driving circuit 120, a second scan driving circuit 130, a terminal 140, a data driving circuit 150, a first power supply wiring 160, and a second power supply wiring 170 may be disposed.

[0078] The first scan driving circuit 120 may provide a scan signal to each pixel P through a scan line SL. The first scan driving circuit 120 may provide a light emission control signal to each pixel P through a light emission control line EL. The second scan driving circuit 130 may be arranged side by side with the first scan driving circuit 120 with the display area DA in the middle. A portion of the pixels P arranged in the display area DA may be electrically connected to the first scan driving circuit 120, and the remaining portion may be connected to the second scan driving circuit 130. As another embodiment, the second scan driving circuit 130 may be omitted.

[0079] The terminal 140 may be disposed on one side of the substrate 100. The terminal 140 may be exposed without being covered by the insulating layer and electrically connected to the printed circuit board PCB. The terminal PCB-P of the printed circuit board PCB may be electrically connected to the terminal 140 of the display device 1. The printed circuit board PCB transmits a signal or power supply of a control unit (not shown) to the display device 1.

[0080] The control signal generated in the control unit can be transmitted to the first scan driving circuit 120 and the second scan driving circuit 130 through the printed circuit board PCB. The control unit can provide the first power supply voltage ELVDD and the second power supply voltage ELVSS to the first power supply wiring 160 and the second power supply wiring 170 through the first connection wiring 161 and the second connection wiring 171. The first power supply voltage ELVDD can be provided to each pixel P through the driving voltage line PL connected to the first power supply wiring 160, and the second power supply voltage ELVSS is provided to the counter electrode of each pixel P connected to the second power supply wiring 170.

[0081] The data driving circuit 150 is electrically connected to the data line DL. The data signal of the data driving circuit 150 may be provided to each pixel P through the connection wiring 151 connected to the terminal 140 and the data line DL connected to the connection wiring 151. Figure 2 The data driving circuit 150 is shown to be disposed on the printed circuit board PCB, but as another embodiment, the data driving circuit 150 may be disposed on the substrate 100. For example, the data driving circuit 150 may be disposed between the terminal 140 and the first power supply wiring 160.

[0082] The first power supply wiring 160 may include a first sub wiring 162 and a second sub wiring 163 extending side by side in the x direction with the display area DA in the middle. The second power supply wiring 170 may partially surround the display area DA in a ring shape with one side open.

[0083] Figure 3 is an equivalent circuit diagram of a pixel that may be included in the display device 1 according to an embodiment of the present disclosure.

[0084] Reference Figure 3 , each pixel P includes: a pixel circuit PC connected to the scan line SL and the data line DL; and an organic light emitting element OLED connected to the pixel circuit PC.

[0085] The pixel circuit PC includes a driving thin film transistor Td, a switching thin film transistor Ts and a storage capacitor Cst. The switching thin film transistor Ts is connected to the scan line SL and the data line DL, and transmits the data signal Dm input through the data line DL to the driving thin film transistor Td according to the scan signal Sn input through the scan line SL.

[0086] The storage capacitor Cst is connected to the switching thin film transistor Ts and the driving voltage line PL, and stores a voltage corresponding to a difference between a voltage received from the switching thin film transistor Ts and a first power voltage ELVDD (or driving voltage) supplied to the driving voltage line PL.

[0087] The driving thin film transistor Td can be connected to the driving voltage line PL and the energy storage capacitor Cst, and control the driving current flowing from the driving voltage line PL through the organic light emitting element OLED according to the voltage value stored in the energy storage capacitor Cst. The organic light emitting element OLED can emit light with a predetermined brightness through the driving current.

[0088] Figure 3 The case where the pixel circuit PC includes two thin film transistors and one energy storage capacitor is described in the figure, but the present disclosure is not limited thereto. As another embodiment, the pixel circuit PC may include seven thin film transistors and one energy storage capacitor. As another embodiment, the pixel circuit PC may also include more than two energy storage capacitors.

[0089] Figures 4 to 7 is a cross-sectional view schematically showing a part of a manufacturing process of the display device 1 according to an embodiment of the present disclosure, Figure 8 is a cross-sectional view schematically showing a portion of the display device 1 manufactured by the manufacturing method according to an embodiment of the present disclosure.

[0090] First, refer to Figure 4 , an insulating inorganic film 110 may be formed on the substrate 100 .

[0091] The substrate 100 may include glass or a polymer resin. The polymer resin may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate or cellulose acetate propionate, etc. The substrate 100 including the polymer resin may have flexible, rollable or bendable properties. The substrate 100 may be a multilayer structure including a layer including the aforementioned polymer resin and an inorganic layer (not shown).

[0092] The insulating inorganic film 110 may be formed as a single layer or multiple layers. The insulating inorganic film 110 may include, for example, silicon oxide (SiO 2 ), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium dioxide (HfO 2 ) or zinc oxide (ZnO 2 )wait.

[0093] The insulating inorganic film 110 may include a pixel circuit PC. The insulating inorganic film 110 including the pixel circuit PC may be understood as including multiple layers of inorganic films, electrodes and wirings constituting the pixel circuit PC being interposed between the inorganic films, and the electrodes and wirings being electrically connected to each other through contact holes formed in a portion of the inorganic film.

[0094] Reference Figure 8 , the insulating inorganic film 110 may include a buffer layer 112, a gate insulating layer 114, and an interlayer insulating layer 116. That is, the insulating inorganic film 110 may be a multilayer structure including the buffer layer 112, the gate insulating layer 114, and the interlayer insulating layer 116. The buffer layer 112, the gate insulating layer 114, and the interlayer insulating layer 116 may include, for example, silicon oxide (SiO X ), silicon nitride (SiN X ) and silicon oxynitride (SiO X N Y). In addition, the buffer layer 112, the gate insulating layer 114 and the interlayer insulating layer 116 may be formed by chemical vapor deposition (CVD), for example, by plasma enhanced CVD (PECVD).

[0095] The buffer layer 112 may be disposed on the substrate 100 to planarize the upper surface of the substrate 100 and to block the inflow of impurities from the substrate 100 .

[0096] As described above, the insulating inorganic film 110 may include a pixel circuit PC such as Figure 8 As shown, the pixel circuit PC may include a thin film transistor TFT. The thin film transistor TFT includes: a semiconductor layer 111; a gate electrode 113 configured to overlap at least a portion of the semiconductor layer 111; and a source electrode 115a and a drain electrode 115b electrically connected to the semiconductor layer 111. Figure 8 The top-gate thin film transistor TFT in which the gate electrode 113 is located on the upper part of the semiconductor layer 111 is disclosed, but as another embodiment, the thin film transistor TFT can also be set as a bottom-gate thin film transistor TFT in which the gate electrode 113 is located on the lower part of the semiconductor layer 111.

[0097] The semiconductor layer 111 may be formed on the buffer layer 112. The semiconductor layer 111 may include an oxide semiconductor or a silicon semiconductor. When the semiconductor layer 111 is formed of an oxide semiconductor, it may include, for example, an oxide of at least one substance selected from the group consisting of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti) and zinc (Zn). For example, the semiconductor layer 111 may be an ITZO (InSnZnO) semiconductor layer, an IGZO (InGaZnO) semiconductor layer, etc. When the semiconductor layer 111 is formed of a silicon semiconductor, it may include, for example, amorphous silicon (a-Si) or low temperature polycrystalline silicon (Low Temperature Poly-Silicon; LTPS).

[0098] A gate electrode 113 may be formed on the semiconductor layer 111, with a gate insulating layer 114 interposed therebetween. For example, the gate electrode 113 may be formed as a single layer or multiple layers by one or more metals selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). The gate electrode 113 may be connected to a gate line that applies an electrical signal to the gate electrode 113.

[0099] A source electrode 115a and / or a drain electrode 115b may be formed on the gate electrode 113 with the interlayer insulating layer 116 interposed therebetween. The source electrode 115a and / or the drain electrode 115b may be electrically connected to the semiconductor layer 111 through contact holes formed in the interlayer insulating layer 116 and the gate insulating layer 114.

[0100] Refer again Figure 4 , an insulating organic film 180 may be formed on the insulating inorganic film 110. Figure 4 The insulating organic film 180 is shown as a single layer, but the insulating organic film 180 may be formed in multiple layers. The insulating organic film 180 may planarize the upper surface of the pixel circuit PC, thereby planarizing the surface on which the organic light emitting element OLED is to be disposed.

[0101] The insulating organic film 180 may also include conventional general-purpose polymers such as BCB (Benzocyclobutene), polyimide, HMDSO (Hexamethyldisiloxane), polymethylmethacrylate (PMMA), or polystyrene (PS), polymer derivatives having a phenolic group, acrylic polymers, imide polymers, aromatic ether polymers, amide polymers, fluorine polymers, paraxylene polymers, vinyl alcohol polymers, and blends thereof, etc. As another embodiment, the insulating organic film 180 may also include organic substances and inorganic substances.

[0102] The pixel electrode 210 may be formed on the insulating organic film 180 . The pixel electrode 210 may be a (semi-) light-transmitting electrode or a reflective electrode. The pixel electrode 210 may be electrically connected to the pixel circuit PC through a contact hole formed in the insulating organic film 180 .

[0103] As an embodiment, the pixel electrode 210 may include a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof, and a transparent or semi-transparent electrode layer formed on the reflective film. The transparent or semi-transparent electrode layer may include indium tin oxide (ITO; indium tin oxide), indium zinc oxide (IZO; indium zinc oxide), zinc oxide (ZnO; zinc oxide), indium oxide (In 2 O 3At least one selected from the group consisting of indium oxide (IGO), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). For example, the pixel electrode 210 may have a structure in which ITO / Ag / ITO are stacked.

[0104] A pixel defining film 190 may be formed on the insulating organic film 180. The pixel defining film 190 may define the light emitting area of ​​the pixel by having an opening 190OP that exposes the central portion of the pixel electrode 210. In addition, the pixel defining film 190 may prevent arcing from occurring at the edge of the pixel electrode 210 by increasing the distance between the edge of the pixel electrode 210 and the counter electrode 230 above the pixel electrode 210. The pixel defining film 190 includes an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, HMDSO (hexamethyldisiloxane), and phenolic resin, and may be formed by spin coating or the like.

[0105] An intermediate layer 220 including an organic light emitting layer may be formed on the pixel electrode 210 exposed by the pixel defining film 190. The organic light emitting layer may include an organic substance containing a fluorescent or phosphorescent substance emitting red, green, blue or white light. The organic light emitting layer may be formed of a low molecular organic substance or a high molecular organic substance.

[0106] Although not shown in the figure, functional layers such as a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL) can be selectively configured below and above the organic light-emitting layer. A plurality of pixel electrodes 210 can be provided, and the intermediate layer 220 can be configured to correspond to the plurality of pixel electrodes 210, respectively. However, it is not limited thereto. The intermediate layer 220 can be deformed in various forms such as a layer that can include a plurality of pixel electrodes 210 as a whole.

[0107] The counter electrode 230 may be formed on the intermediate layer 220. The counter electrode 230 may be a light-transmitting electrode or a reflective electrode. As an embodiment, the counter electrode 230 may be a transparent or semi-transparent electrode, and may be formed of a metal thin film having a small work function including Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and compounds thereof.

[0108] As an optional embodiment, ITO, IZO, ZnO or In 2 O 3 The counter electrode 230 may be arranged across the display area DA and the non-display area NDA, and may be arranged above the intermediate layer 220 and the pixel defining film 190. The counter electrode 230 may be integrally formed in a plurality of organic light emitting elements OLED and correspond to a plurality of pixel electrodes 210.

[0109] When the pixel electrode 210 is configured as a reflective electrode and the counter electrode 230 is configured as a light-transmitting electrode, light emitted from the intermediate layer 220 is emitted toward the counter electrode 230 side, and the display device can become a full-luminescent type.

[0110] As another embodiment, when the pixel electrode 210 is formed of a transparent or semi-transparent electrode and the counter electrode 230 is formed of a reflective electrode, the light emitted from the intermediate layer 220 is emitted toward the substrate 100 side, and the display device can become a back-emitting type. However, the present embodiment is not limited thereto, and the display device of the present embodiment can also be a double-sided emitting type that emits light toward both the front and back directions.

[0111] Afterwards, if Figures 5 to 7 As shown, a thin film sealing layer 300 may be formed on the counter electrode 230. The thin film sealing layer 300 may include at least one organic film and at least one inorganic film. In the full-luminescent display device 1 of an embodiment of the present disclosure, the thin film sealing layer 300 is located above the organic light-emitting element OLED, and the light emitted from the organic light-emitting element OLED can be recognized from the outside through the thin film sealing layer 300.

[0112] This thin film sealing layer 300 is located in the upper layer of the display device 1 and is easily exposed to ultraviolet rays (UV) incident from the outside. In particular, when ultraviolet rays (UV) irradiate the inorganic film of the thin film sealing layer 300, the optical properties of the inorganic film change, and the transmittance changes in the visible light region. Such an increase in the transmittance of the inorganic film shows a greater change in blue light, and there is a problem of bluish images in the display area DA. In addition, when ultraviolet rays (UV) irradiate the inorganic film of the thin film sealing layer 300, hydrogen (H2O) is generated as hydrogen bonds in the inorganic film dissociate. 2 ), due to the generation of hydrogen (H 2 ) causes the problem of defective organic light-emitting elements OLED.

[0113] In the display device 1 according to an embodiment of the present disclosure, after the inorganic film included in the thin film sealing layer 300 is formed, ultraviolet rays (UV) are irradiated to the inorganic film to forcibly change the film properties of the inorganic film, thereby minimizing the color change of the entire display area DA due to the change in transmittance of the inorganic film caused by ultraviolet rays (UV) incident from the outside or the change in the color of the entire display area DA due to hydrogen (H 2 ) causes defects in the organic light-emitting element OLED.

[0114] Reference Figure 5 , a first encapsulated inorganic film 310 may be formed on the counter electrode 230. The first encapsulated inorganic film 310 may include, for example, silicon oxide (SiO 2 ), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium dioxide (HfO 2 ) or zinc oxide (ZnO 2 ) etc. The first encapsulated inorganic film 310 may be formed by chemical vapor deposition (CVD), for example, by plasma enhanced CVD (PECVD).

[0115] After the first sealed inorganic film 310 is formed, light with an ultraviolet (UV) wavelength is irradiated to the first sealed inorganic film 310. As a method of irradiating light with an ultraviolet (UV) wavelength, for example, a lamp with a UV wavelength such as a Xe lamp, a metal halide lamp, a UV lamp, a mercury lamp, or a plasma treatment that emits light in the UV band can be used. Degassing OG may occur in the first sealed inorganic film 310 irradiated with ultraviolet (UV), which can be understood as hydrogen (H2) generated by the dissociation of hydrogen bonds inside the first sealed inorganic film 310. 2 ).

[0116] As an embodiment, when the first encapsulating inorganic film 310 is made of silicon nitride (SiN X ) or silicon oxynitride (SiO X N Y ) is formed, the first enclosed inorganic film 310 irradiated with ultraviolet light (UV) can satisfy the chemical reaction as shown in the following reaction formula 1.

[0117] [Reaction 1]

[0118] NH x +Si-H y →NHx-1 +Si-H y-1 +H 2

[0119] Si+N→Si-N

[0120] Referring to the above reaction formula 1, it can be seen that the NH bonds and Si-H bonds in the first sealed inorganic film 310 are decomposed to generate hydrogen (H 2 That is, it can be seen that when ultraviolet (UV) rays are irradiated to the first sealed inorganic film 310, the NH bonds and Si-H bonds are relatively reduced, and the Si-N bonds are relatively increased in the composition ratio within the first sealed inorganic film 310.

[0121] Therefore, compared with the same material, such as silicon nitride (SiN X ) or silicon oxynitride (SiO X N Y ) compared to the insulating inorganic film 110 formed by a first encapsulating inorganic film 310, the first encapsulating inorganic film 310 may contain less hydrogen (H) group content, relatively fewer NH bonds and Si-H bonds, and relatively more Si-N bonds.

[0122] As an example, when the first encapsulating inorganic film 310 is made of silicon oxide (SiO X ) is formed, the first enclosed inorganic film 310 irradiated with ultraviolet light (UV) can satisfy the chemical reaction as shown in the following reaction formula 2.

[0123] [Reaction 2]

[0124] OH x +Si-H y →OH x-1 +Si-H y-1 +H 2

[0125] Si+O→Si-O

[0126] Referring to the above reaction formula 2, it can be seen that the OH bonds and Si-H bonds in the first sealed inorganic film 310 are decomposed to generate hydrogen (H 2 That is, it can be seen that when the ultraviolet (UV) rays are irradiated to the first sealed inorganic film 310, the OH bonds and Si-H bonds are relatively reduced and the Si-O bonds are relatively increased in the composition ratio within the first sealed inorganic film 310.

[0127] Therefore, compared with the same material, such as silicon oxide (SiO X ) formed by a first encapsulated inorganic film 310, the first encapsulated inorganic film 310 may contain less hydrogen (H) group content, relatively fewer OH bonds and Si-H bonds, and relatively more Si-O bonds.

[0128] Afterwards, if Figure 6 As shown, a sealed organic film 320 may be formed on the first sealed inorganic film 310. The sealed organic film 320 may be formed to be thicker than the first sealed inorganic film 310, and the upper surface thereof may be formed to be substantially flat. Although not shown, the first sealed inorganic film 310 may extend from the display area DA to the edge side of the substrate 100, while the sealed organic film 320 may be formed only to a dam portion (not shown) formed in a manner surrounding the display area DA. The dam portion may prevent the sealed organic film 320 from overflowing.

[0129] The encapsulated organic film 320 may include a polymer substance. The polymer substance may include acrylic resin, epoxy resin, polyimide, polyethylene, etc. As an embodiment, the encapsulated organic film 320 may include acrylate.

[0130] Afterwards, if Figure 7 As shown, a second encapsulated inorganic film 330 may be formed on the encapsulated organic film 320. The method for forming the second encapsulated inorganic film 330 is similar to that of reference Figure 5 The method of forming the first encapsulating inorganic film 310 is the same as described above.

[0131] The second encapsulating inorganic film 330 may include, for example, silicon oxide (SiO 2 ), silicon nitride (SiN X ), silicon oxynitride (SiON), aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium dioxide (HfO 2 ) or zinc oxide (ZnO 2 ) etc. The second encapsulating inorganic film 330 may be formed by chemical vapor deposition (CVD), for example, by plasma enhanced CVD (PECVD).

[0132] After forming the second sealed inorganic film 330, light with an ultraviolet (UV) wavelength is irradiated to the second sealed inorganic film 330. As a method of irradiating light with an ultraviolet (UV) wavelength, for example, a lamp with a UV wavelength such as a Xe lamp, a metal halide lamp, a UV lamp, a mercury lamp, or a plasma treatment that emits light in the UV band can be used. Degassing OG may occur in the second sealed inorganic film 330 irradiated with ultraviolet (UV), which can be understood as hydrogen bonds dissociated in the second sealed inorganic film 330 to generate hydrogen (H 2 ).

[0133] As an embodiment, when the second encapsulating inorganic film 330 is made of silicon nitride (SiN X ) or silicon oxynitride (SiO X N Y ) is formed, a chemical reaction such as the above reaction formula 1 may occur in the second encapsulated inorganic film 330 irradiated with ultraviolet light (UV). In addition, as an embodiment, when the second encapsulated inorganic film 330 is made of silicon oxide (SiO X ) is formed, a chemical reaction as shown in the above-mentioned reaction formula 2 may occur in the second encapsulated inorganic film 330 irradiated with ultraviolet light (UV).

[0134] Reference Figure 8 The display device 1 manufactured by the aforementioned manufacturing method may include the first encapsulated inorganic film 310 and the second encapsulated inorganic film 330 treated by ultraviolet (UV) irradiation, and the insulating inorganic film 110 not treated by ultraviolet (UV) irradiation. As another embodiment, a portion of the buffer layer 112, the gate insulating layer 114, and the interlayer insulating layer 116 included in the insulating inorganic film 110 may be treated by ultraviolet (UV) irradiation, and the other portion may not be treated by ultraviolet (UV) irradiation.

[0135] As an example, when the first encapsulating inorganic film 310 and the insulating inorganic film 110 (eg, the gate insulating layer 114) include the same material (eg, silicon nitride (SiN X )), there may be a difference in the ratio of components in the first enclosed inorganic film 310 and the insulating inorganic film 110. As described above, compared with the insulating inorganic film 110 that has not been treated with ultraviolet (UV) irradiation, the first enclosed inorganic film 310 treated with ultraviolet (UV) irradiation may have a smaller ratio of NH bonds and Si-H bonds and a larger ratio of Si-N bonds.

[0136] Such a difference in the component ratio within the film may also be the same in the case of the second encapsulating inorganic film 330 .

[0137] Compared with the insulating inorganic film 110 not subjected to UV irradiation treatment, the first sealed inorganic film 310 subjected to UV irradiation treatment has a smaller ratio of NH bonds and Si-H bonds and a larger ratio of Si-N bonds, which may mean that hydrogen bonds in the first sealed inorganic film 310 are dissociated by UV irradiation to generate hydrogen (H 2 ). Therefore, the ratio of hydrogen (H) contained in the first encapsulating inorganic film 310 may be smaller than the ratio of hydrogen (H) contained in the insulating inorganic film 110. That is, in an inorganic film formed of the same substance, the composition ratio in the film may be changed depending on the presence or absence of ultraviolet (UV) irradiation treatment.

[0138] Fig. 9 This is a table comparing components of an inorganic film of a display device 1 according to an embodiment of the present disclosure before and after light irradiation treatment (solar treatment) is performed.

[0139] Reference Fig. 9 , a table comparing the composition of the inorganic film of the display device 1, such as the first sealed inorganic film 310 and / or the second sealed inorganic film 330, before and after ultraviolet (UV) irradiation treatment. In this experimental example, the first sealed inorganic film 310 and / or the second sealed inorganic film 330 are made of silicon nitride (SiN X ) or silicon oxynitride (SiO X N Y )form. Fig. 9 The table was derived by FT-IR analysis.

[0140] First, it can be seen that when the first encapsulated inorganic film 310 and / or the second encapsulated inorganic film 330 is made of silicon nitride (SiN X ) is formed, silicon nitride (SiN X ) The NH bonds contained in the film decreased by 1.1% from 3.3% to 2.2%, and the Si-N bonds ~ Si-O bonds increased by 0.8% from 86.7% to 87.5%.

[0141] In addition, it can be seen that when the first encapsulated inorganic film 310 and / or the second encapsulated inorganic film 330 is made of silicon oxynitride (SiO X N Y ) is formed, silicon oxynitride (SiO X N Y )The NH bonds contained in the film decreased by 0.6% from 4.5% to 3.9%, and the Si-N bonds ~ Si-O bonds increased by 0.6% from 87.1% to 87.7%.

[0142] Thus, it can be seen that when the inorganic film is intentionally subjected to ultraviolet (UV) irradiation treatment, the NH bonds are reduced and the Si-N bond to Si-O bond are increased. In the display device 1, the insulating inorganic film 110 between the substrate 100 and the organic light emitting element OLED is less likely to be modified by ultraviolet (UV) or external light than the first sealed inorganic film 310 and the second sealed inorganic film 330 located above the organic light emitting element OLED, and therefore, the ultraviolet (UV) irradiation treatment may not be performed.

[0143] At this time, compared with the insulating inorganic film 110 formed of the same material, the film components of the first encapsulated inorganic film 310 and the second encapsulated inorganic film 330 intentionally subjected to ultraviolet (UV) irradiation treatment contain a relatively lower ratio of NH bonds and a relatively higher ratio of Si-N bonds and Si-N bonds to Si-O bonds. X ) film or silicon oxynitride (SiO X N Y ) film, the ratio of NH bonds, Si-N bonds, and Si-N bonds to Si-O bonds contained in the film can be different depending on whether or not it is treated with ultraviolet (UV) irradiation.

[0144] When an inorganic film is intentionally irradiated with ultraviolet light (UV), the NH bonds decrease and the Si-N to Si-O bonds increase. This can be understood as hydrogen (H) bonds dissociating in the film to generate hydrogen (H 2 ). Hydrogen (H 2 ) may cause a defect in the organic light-emitting element OLED while moving between the films of the display device 1, so the inorganic film may be intentionally irradiated with ultraviolet light (UV) to discharge hydrogen (H) during the process. 2 ), thereby further improving the reliability of the display device 1.

[0145] Fig.10 Graph showing changes in transmittance before and after light irradiation treatment (solar treatment) is performed on the inorganic film of the display device 1 according to an embodiment of the present disclosure.

[0146] Reference Fig.10 , shows a transmittance change curve of the inorganic film of the display device 1, such as the first sealed inorganic film 310 and / or the second sealed inorganic film 330, before and after ultraviolet (UV) irradiation treatment. In this experimental example, the inorganic film is made of silicon nitride (SiN X )( Fig.10 (a)) or silicon oxynitride (SiO X N Y )( Fig.10 (b)) is formed, and the curve graph shows the change in transmittance in the visible light region.

[0147] Silicon Nitride (SiN X ) film and silicon oxynitride (SiO X N Y ) films all showed an increase in transmittance after ultraviolet (UV) irradiation treatment. In particular, it was found that silicon nitride (SiN X ) film and silicon oxynitride (SiO X N Y) The transmittance of the film increases significantly in the low-wavelength region, such as the blue light region.

[0148] In this way, the transmittance of the inorganic film treated with ultraviolet (UV) light increases in the blue light region, so the R, G, and B values ​​of the organic light-emitting element OLED can be set by considering the increased transmittance to prevent the image presented in the display area DA from being bluish.

[0149] The present disclosure is described with reference to the embodiments shown in the accompanying drawings, but they are only exemplary, and anyone with ordinary knowledge in the technical field will understand that various modifications and other equivalent embodiments can be implemented. Therefore, the true technical protection scope of the present disclosure should be determined by the technical concept of the attached claims.

Claims

1. A method for manufacturing a display device, in, include: forming an insulating inorganic film on a substrate; forming a display element on the insulating inorganic film; forming a first sealed inorganic film on the display element; a step of irradiating the first sealed inorganic film with light of ultraviolet wavelength; and forming a sealed organic film on the first sealed inorganic film, After the step of irradiating the first sealed inorganic film with light having an ultraviolet wavelength, the transmittance of the first sealed inorganic film in the ultraviolet wavelength region increases.

2. The method for manufacturing a display device according to claim 1, in, The manufacturing method of the display device further includes: forming a second encapsulated inorganic film on the encapsulated organic film; and The step of irradiating the second sealed inorganic film with light having an ultraviolet wavelength.

3. The method for manufacturing a display device according to claim 1, in, The step of irradiating the first sealed inorganic film with light having an ultraviolet wavelength is a step of generating hydrogen gas in the first sealed inorganic film.

4. The method for manufacturing a display device according to claim 3, in, The first encapsulated inorganic film has a smaller hydrogen radical content than the insulating inorganic film.

5. The method for manufacturing a display device according to claim 1, in, The first encapsulated inorganic film includes at least one of silicon nitride and silicon oxynitride.

6. The method for manufacturing a display device according to claim 5, in, After the step of irradiating the first sealed inorganic film with light of ultraviolet wavelength, the first sealed inorganic film satisfies the following reaction formula 1: [Reaction 1] NH x +Si-H y →NH x-1 +Si-H y-1 +H 2 Si+N→Si-N.

7. The method for manufacturing a display device according to claim 1, in, The first encapsulated inorganic film includes silicon oxide.

8. The method for manufacturing a display device according to claim 7, in, After the step of irradiating the first sealed inorganic film with light of ultraviolet wavelength, the first sealed inorganic film satisfies the following reaction formula 2: [Reaction 2] Olympic Games x +Si-H y →OH x-1 +Si-H y-1 +H 2 Si+O→Si-O.

9. The method for manufacturing a display device according to claim 1, in, The step of irradiating the first sealed inorganic film with light having an ultraviolet wavelength uses a lamp or a plasma method that emits light having an ultraviolet wavelength.

10. A display device, in, have: substrate; A pixel circuit layer, disposed on the substrate, and comprising an insulating inorganic film and a thin film transistor; A display element electrically connected to the thin film transistor; as well as The thin film sealing layer is disposed on the display element and includes a first sealing inorganic film and a sealing organic film, wherein the first sealing inorganic film has a lower hydrogen group content than the insulating inorganic film. In the ultraviolet region, the transmittance of the first encapsulating inorganic film is higher than the transmittance of the insulating inorganic film.

11. The display device according to claim 10, in, The film sealing layer also includes: A second sealed inorganic membrane is disposed on the sealed organic membrane, The second encapsulated inorganic film has a smaller hydrogen radical content than the insulating inorganic film.

12. The display device according to claim 10, in, The insulating inorganic film and the first encapsulating inorganic film include at least one of silicon nitride and silicon nitride oxide.

13. The display device according to claim 12, in, The first encapsulated inorganic film has fewer NH bonds and Si—H bonds than the insulating inorganic film.

14. The display device according to claim 12, in, The first encapsulated inorganic film has more Si-N bonds than the insulating inorganic film.

15. The display device according to claim 10, in, The insulating inorganic film and the first encapsulating inorganic film include silicon oxide.

16. The display device according to claim 15, in, The first encapsulated inorganic film has fewer OH bonds and Si—H bonds than the insulating inorganic film.

17. The display device according to claim 15, in, The first encapsulated inorganic film has more Si—O bonds than the insulating inorganic film.

18. The display device according to claim 10, in, The display element comprises: a pixel electrode; a counter electrode located above the pixel electrode; and an intermediate layer including a light-emitting layer between the pixel electrode and the counter electrode. The thin film sealing layer is disposed on the counter electrode to completely seal the display element from the outside.

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