Polarized high-power laser

Abstract

This invention discloses a polarization-based high-power laser, comprising at least two sets of beam output devices. Each set of beam output devices forms an optical path. Optical path one passes through one set of beam output devices, a beam compression lens group, and a half-wave plate to reach a polarization combining prism. Optical path two passes through another set of beam output devices and a beam compression lens group to reach the polarization combining prism. The beam from optical path one is perpendicular to the beam from optical path two when it enters the polarization combining prism. The beams from optical path one and optical path two converge at the polarization combining prism and then enter a coupling lens before reaching the input end of an optical fiber. This invention decomposes a unidirectional optical path into two optical paths, resulting in smaller differences in the optical path travel between the beam output devices in each path. This shortens the long-distance optical path travel, improves beam consistency, and enhances the laser's operating accuracy.

Description

Technical Field

[0001] This invention relates to the field of laser technology, and in particular to a polarization-type high-power laser. Background Technology

[0002] In the field of semiconductor lasers, small size and high power have become the trends in practical applications and production development. Currently, a single high-power 450nm laser transistor cannot achieve 100-watt-level optical output, and the manufacturing difficulty and high cost of a single high-power laser transistor hinder its widespread adoption. Some existing technologies employ unidirectional high-density integrated lasers. Because multiple transistor light sources need to be integrated onto a single base or substrate to form an independent component, a common approach is to tightly arrange a large number of transistor light sources on different steps, while ensuring that these transistor light sources do not interfere with each other. Therefore, the resulting large number of beams are located in different spaces, and the optical path distances of these transistor light sources on the base before reaching the optical fiber vary significantly from far to near, resulting in differences in the generated beam spots and poor beam consistency. Improvements are needed to address this issue. Summary of the Invention

[0003] To address the shortcomings of existing unidirectional high-density integrated lasers, such as significant differences in the optical path travel of transistor light sources and poor beam consistency, the applicant provides a structurally sound polarized high-power laser. This laser can reduce the differences in the optical path travel of high-density integrated lasers, shorten long-distance optical path travel, improve beam consistency, and enhance the working accuracy of the laser. Furthermore, it can activate a backup unit for self-repair when some transistor light sources fail, ensuring continued operation and effectively extending the service life.

[0004] The technical solution adopted in this invention is as follows:

[0005] A polarization-type high-power laser includes at least two sets of beam output devices, each set of beam output devices forming an optical path. Optical path one passes through a set of beam output devices, a beam compression lens group, and a half-wave plate to reach a polarization combining prism. Optical path two passes through another set of beam output devices and a beam compression lens group to reach a polarization combining prism. When the beam of optical path one enters the polarization combining prism, it is perpendicular to the beam of optical path two entering the polarization combining prism. The beams of optical path one and optical path two merge at the polarization combining prism and then enter a coupling lens, and then reach the input end of an optical fiber.

[0006] As a further improvement to the above technical solution:

[0007] The beam output device includes a base and multiple beam output units. The base is divided into multiple steps of different heights, and the multiple beam output units are arranged in rows on different steps.

[0008] Each beam output unit includes multiple transistor light sources, multiple sets of beam shaping lenses, and a reflector. The transistor light sources in each beam output unit are arranged in a row, and the transistor light sources and beam shaping lens sets are arranged in front and behind each other.

[0009] The light beam emitted by a transistor light source is linearly polarized.

[0010] The reflector forms a 45° angle with the beam emitted by the transistor light source. The light from the transistor light sources arranged in rows with different heights in the beam output device is reflected by the reflector to form a beam array.

[0011] In optical path one, the beam array emitted by the beam output device is located horizontally, while in optical path two, the beam array emitted by the beam output device is located vertically.

[0012] In a beam output device, the transistor light sources of all beam output units on the base are divided into a standby group and a working group. The transistor light source of the standby group is activated when the transistor light source of the working group fails.

[0013] The beam compression lens group is a combination of positive and negative lenses.

[0014] The optical axis of the half-wave plate forms a 45° angle with the polarization direction of the linearly polarized light emitted by the beam output device in optical path one. After the beam passes through the half-wave plate, the polarization direction rotates by 90°.

[0015] The polarizing beam combiner is composed of two right-angle crystal prisms with their 45° inclined planes facing each other, forming a cubic structure. The light beam from the first optical path is transmitted when it reaches the two right-angle crystal prisms, while the light beam from the second optical path is reflected when it reaches the two right-angle crystal prisms on their 45° inclined planes.

[0016] The beneficial effects of this invention are as follows:

[0017] This invention includes at least two sets of beam output devices, each forming an optical path. The beams from optical path one and optical path two converge at a polarization combining prism. The beam from optical path one is transmitted through two right-angle crystal prisms, while the beam from optical path two is reflected at a 45° angle when it reaches the two right-angle crystal prisms. The beam from optical path one is perpendicular to the beam from optical path two when it enters the polarization combining prism. After converging at the polarization combining prism, the beams from optical path one and optical path two enter a coupling lens and then reach the input end of the optical fiber. Compared to the prior art, this invention decomposes a unidirectional optical path into two optical paths, resulting in smaller differences in the optical path travel in the beam output devices of each path, shortening the long-distance optical path travel, improving beam spot consistency, and enhancing the working accuracy of the laser. The transistor light sources of all beam output units on the base of this invention are divided into a standby group and a working group. Under normal circumstances, the transistor light sources of the standby group are in an inactive state. When an abnormality is detected in the transistor light source of the working group, the transistor light source of the standby group is automatically activated to automatically repair the abnormality of the laser, ensuring the overall stability and reliability of the laser and effectively extending the service life of the laser. Attached Figure Description

[0018] Figure 1 This is a perspective view of the present invention.

[0019] Figure 2 This is a top view of the present invention.

[0020] In the diagram: 1. Base; 2. Beam output unit; 21. Transistor light source; 22. Beam shaping lens; 23. Reflector; 3. Beam compression lens group; 31. Positive lens; 32. Negative lens; 4. Half-wave plate; 5. Polarizing beam combiner prism; 6. Coupler lens; 7. Optical fiber. Detailed Implementation

[0021] The specific embodiments of the present invention will now be described with reference to the accompanying drawings.

[0022] like Figure 1 and Figure 2 As shown, the polarization high-power laser of the present invention consists of two sets of beam output devices forming optical path one and optical path two, respectively. Optical path one passes through a set of beam output devices, a beam compression lens group 3, and a half-wave plate 4 to reach a polarization combining prism 5. Optical path two passes through another set of beam output devices and a beam compression lens group 3 to reach a polarization combining prism 5. When the beam of optical path one enters the polarization combining prism 5, it is perpendicular to the beam of optical path two entering the polarization combining prism 5. After the beams of optical path one and optical path two merge at the polarization combining prism 5, they enter the coupling lens 6 and then reach the input end of the optical fiber 7.

[0023] The beam output device includes a base 1 and multiple beam output units 2. The base 1 is made of metal or ceramic material with a thermal conductivity greater than 100 W / mK. The base 1 is divided into multiple steps of different heights, and the multiple beam output units 2 are arranged in rows on different steps. Each beam output unit 2 includes multiple transistor light sources 21, multiple sets of beam shaping lenses 22, and a reflector 23. The transistor light sources 21 of each beam output unit 2 are arranged in a row, with the transistor light sources 21 and the beam shaping lens sets 22 corresponding to each other in a straight optical path. The beam emitted by the transistor light sources 21 is linearly polarized. The reflector 23 forms a 45° angle with the beam emitted by the transistor light sources 21. The light from the rows of transistor light sources 21 with height differences in the beam output device is reflected by the reflector 23 to form a beam array. The beam array emitted by the beam output device in optical path one is located laterally, and the beam array emitted by the beam output device in optical path two is located longitudinally. The beam array emitted by the beam output device in optical path one passes through the beam compression lens group 3 and the half-wave plate 4 before entering one side of the polarization combining prism 5. The beam array emitted from beam two passes through beam compression lens group 3 and then enters another vertical plane of polarization beam combiner prism 5.

[0024] The beam compression lens group 3 is a combination of a positive lens 31 and a negative lens 32, used to compress the beam width. Both surfaces of the positive lens 31 and the negative lens 32 are coated with anti-reflection films to increase light transmission. The optical axis of the half-wave plate 4 forms a 45° angle with the polarization direction of the linearly polarized light emitted from the transistor light source 21 in optical path one. After passing through the half-wave plate 4, the beam's polarization direction rotates by 90°. The polarization beam combiner prism 5 is composed of two right-angle crystal prisms with their 45° inclined planes facing each other, forming a cubic structure. The beam from optical path one, after being redirected by the half-wave plate 4, is transmitted to the two right-angle crystal prisms. The beam from optical path two is reflected at the 45° inclined planes of the two right-angle crystal prisms. The reflected beam has the same direction as the transmitted beam from optical path one and both enter the coupling lens 6. After coupling by the coupling lens 6, it enters the optical fiber 7 and is emitted into the outside via the optical fiber 7.

[0025] The transistor light source 21 adopts a transistor package, forming a hermetically sealed structure with a circular mounting base and a metal sleeve. The opening of the metal sleeve is sealed with glass for emitting the light beam. The package pin of the transistor light source 21 is powered by a circuit board. A heat dissipation material is placed between the circular mounting base and the base 1 for heat dissipation. The transistor light source 21 preferably uses a transistor that emits linearly polarized light with a wavelength of 450nm. The emitting end of the transistor light source 21 corresponds to the beam shaping lens 22. The beam shaping lens 22 shapes the beam with a divergence angle emitted by the light source. The shaped beam enters the corresponding reflector 23 and is transmitted forward after reflection. The base 1 has a total of M steps, and N transistor light sources 21 are distributed on each step, containing a total of N×M transistor light sources 21, wherein preferably M≥4 and N≥4.

[0026] In a beam output device, all the transistor light sources 21 of the beam output units 2 on the base 1 are divided into a backup group and a working group. Under fault-free conditions, the number of transistor light sources 21 in the backup group accounts for more than 20% of the number of working group transistor light sources. For example, if the beam output device has 10 units as backup and 50 units as working group transistor light sources, during normal operation, the 50 working group transistor light sources 21 are activated to output beams, achieving a high-power output of 150W. The package structure of the transistor light source 21 includes a detector for monitoring the backlight current value. Under normal circumstances, the transistor light sources 21 in the backup group are in an inactive state. When an abnormality is detected in a working group transistor light source 21, the backup group transistor light source 21 is automatically activated to automatically repair the laser abnormality, ensuring the overall stability and reliability of the laser and effectively extending the laser's service life.

[0027] The above description is an explanation of the present invention and not a limitation thereof. The present invention can be modified in any form without departing from its spirit. For example, the present invention can also increase the number of optical paths, forming three or more optical paths before coupling, ultimately coupling them into a single high-power laser. For instance, by setting three beam output devices and using two polarization beam combiners to merge the beams in five steps, this constitutes a superposition of some components in the present invention and is also within the scope of protection of the present invention.

Claims

1. A polarization-type high-power laser, characterized in that: It includes at least two sets of beam output devices, each set of beam output devices forming an optical path. Optical path one passes through a set of beam output devices, a beam compression lens group (3), and a half-wave plate (4) to reach a polarization combining prism (5). Optical path two passes through another set of beam output devices and a beam compression lens group (3) to reach a polarization combining prism (5). When the beam of optical path one enters the polarization combining prism (5), it is perpendicular to the beam of optical path two entering the polarization combining prism (5). The beams of optical path one and optical path two converge at the polarization combining prism (5) and then enter the coupling lens (6), and then reach the input end of the optical fiber (7). The beam output device includes a base (1) and multiple beam output units (2). The base (1) is divided into multiple steps of different heights, and multiple beam output units (2) are connected to the optical fiber (7). The beam output units (2) are arranged in rows on different steps; each beam output unit (2) includes multiple transistor light sources (21), multiple sets of beam shaping lenses (22) and a reflector (23). The transistor light sources (21) of each beam output unit (2) are arranged in rows, and the transistor light sources (21) and the beam shaping lenses (22) are arranged in front and behind each other. The beam emitted by the transistor light source (21) is linearly polarized light. The beam compression lens group (3) is a combination of a positive lens (31) and a negative lens (32). The reflector (23) forms a 45° angle with the beam emitted by the transistor light source (21). The light from the transistor light sources (21) arranged in rows with height differences in the beam output device is reflected by the reflector (23) to form a beam array.

2. The polarization-type high-power laser according to claim 1, characterized in that: In optical path one, the beam array emitted by the beam output device is located horizontally, while in optical path two, the beam array emitted by the beam output device is located vertically.

3. The polarization-type high-power laser according to claim 1, characterized in that: In a beam output device, the transistor light sources (21) of all beam output units (2) on the base (1) are divided into a standby group and a working group. The transistor light source (21) of the standby group is activated when the transistor light source (21) of the working group fails.

4. The polarization-type high-power laser according to claim 1, characterized in that: The optical axis of the half-wave plate (4) forms a 45° angle with the polarization direction of the linearly polarized light emitted by the beam output device in the optical path one. After the beam passes through the half-wave plate (4), the polarization direction rotates by 90°.

5. The polarization-type high-power laser according to claim 1, characterized in that: The polarization beam combiner (5) is composed of two crystal right-angle prisms with their 45° inclined planes facing each other, forming a cube structure. The beam of light path one is transmitted when it reaches the two crystal right-angle prisms, and the beam of light path two is reflected when it reaches the two crystal right-angle prisms on the 45° inclined plane.

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