An intelligent power module with integrated switching power supply

Abstract

The present application provides an intelligent power module with an integrated switching power supply, comprising: an HVIC chip, which includes a VSS port, a high-side output port, and a low-side output port, wherein the high-side output ports only include the HO1 port and the HO2 port, and the low-side output ports only include the LO1 port and the LO2 port; an inverter unit, wherein the inverter unit only includes a first triode transistor, a second triode transistor, a third triode transistor, and a fourth triode transistor; a switching power supply, which includes a power MOS transistor and a control circuit; the gate of the power MOS transistor is connected to the control circuit, the drain of the power MOS transistor is connected to the P point, and the source of the power MOS transistor is connected to the VSS port.

Description

Technical Field

[0001] The present application relates to the field of circuits, and in particular to an intelligent power module with an integrated switching power supply. Background Art

[0002] An intelligent power module (IPM) is a power drive product that combines power electronics and integrated circuit technology. It integrates power switching devices and high-voltage drive circuits, and also includes built-in fault detection circuits for overvoltage, overcurrent, and overheating. The IPM receives control signals from the control chip to drive subsequent circuits and transmits system status detection signals back to the control chip. Compared with traditional discrete solutions, IPMs are gaining a growing market share due to their high integration and reliability. They are particularly well-suited for motor drive inverters and various inverter power supplies, making them ideal power electronics devices for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drives, and variable-frequency home appliances.

[0003] For low-power motors, current IPM circuit topologies lack a single-phase full-bridge inverter structure. Furthermore, when the IPM needs to operate to drive a load such as a motor, it requires a switching power supply that rectifies the mains power to generate a DC voltage. However, there are currently no IPMs that integrate a single-phase full-bridge inverter structure with a switching power supply. This can only be achieved by connecting discrete switching power supplies, driver chips, and multiple transistors to a peripheral control circuit. This approach results in complex circuit design and occupies a large area on the circuit board.

[0004] Therefore, the existing technology has defects and is in urgent need of improvement. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide an intelligent power module with an integrated switching power supply, which can greatly simplify the peripheral circuit design of the module.

[0006] An embodiment of the present application provides an intelligent power module with an integrated switching power supply, comprising:

[0007] An HVIC chip comprising a VSS port, a high-side output port, and a low-side output port, wherein the high-side output port comprises only an HO1 port and an HO2 port, and the low-side output port comprises only an LO1 port and an LO2 port;

[0008] an inverter unit, wherein the inverter unit comprises only a first triode transistor, a second triode transistor, a third triode transistor, and a fourth triode transistor;

[0009] The first triode transistor has a gate connected to the HO1 port, a drain connected to point P, and a source connected to point A;

[0010] The second triode transistor has a gate connected to the LO1 port, a drain connected to the source of the first triode transistor, and a source connected to the VSS port of the HVIC chip;

[0011] The third triode transistor has a gate connected to the HO2 port, a drain connected to the drain of the first triode transistor, and a source connected to point B;

[0012] the fourth triode transistor, having a gate connected to the LO2 port, a drain connected to the source of the third triode transistor, and a source connected to the source of the second triode transistor;

[0013] A switching power supply includes a power MOS tube and a control circuit; the gate of the power MOS tube is connected to the control circuit, the drain is connected to point P, and the source is connected to the VSS port; the control circuit is arranged inside the HVIC chip.

[0014] Preferably, in the intelligent power module of the integrated switching power supply according to the embodiment of the present application, the power MOS tube is a laterally diffused metal oxide semiconductor field effect transistor, and the laterally diffused metal oxide semiconductor field effect transistor is arranged inside the HVIC chip.

[0015] Preferably, in the intelligent power module of the integrated switching power supply according to the embodiment of the present application, the power MOS tube is a vertical double diffused metal oxide semiconductor field effect transistor, and the vertical double diffused metal oxide semiconductor field effect transistor is arranged outside the HVIC chip.

[0016] Preferably, in the intelligent power module of the integrated switching power supply of the embodiment of the present application, the control circuit includes a current detection control circuit, a logic circuit, a drive circuit and a variable oscillator, and the HVIC chip further includes a CONTROL port, a MODE port and a FREQUENCY port;

[0017] The current detection control circuit and the variable oscillator are both connected to the logic circuit, and the current detection control circuit is connected to the CONTROL port, and the variable oscillator is connected to the FREQUENCY port; the input end of the drive circuit is connected to the logic circuit, and the output end of the drive circuit is connected to the gate of the power MOS tube; the logic circuit is connected to the MODE port.

[0018] Preferably, in the intelligent power module of the integrated switching power supply of the embodiment of the present application, a temperature protection module, a soft start module, an automatic restart module and a protection mode selection module are provided in the logic circuit.

[0019] Preferably, the intelligent power module of the integrated switching power supply of the embodiment of the present application further includes a Schottky diode and a high-voltage fast recovery diode;

[0020] The anode of the Schottky diode is connected to point P, and the cathode of the Schottky diode is connected to the cathode of the high-voltage fast recovery diode. The anode of the cathode of the high-voltage fast recovery diode is connected to the drain of the power MOS tube.

[0021] Preferably, the intelligent power module of the integrated switching power supply according to the embodiment of the present application further includes a first bootstrap capacitor and a second bootstrap capacitor;

[0022] The HVIC chip further includes a VB1 port and a VS1 port, wherein the VB1 port is connected to the VS1 port via the first bootstrap capacitor; the HVIC chip further includes a VB2 port and a VS2 port, wherein the VB2 port is connected to the VS2 port via a second bootstrap capacitor.

[0023] Preferably, the intelligent power module of the integrated switching power supply according to the embodiment of the present application further includes a sampling resistor;

[0024] A first end of the sampling resistor is connected to the source of the second triode transistor, and a second end of the sampling resistor is connected to the VSS port;

[0025] An overcurrent protection circuit is provided in the HVIC chip, which is used to stop working when the current collected by the sampling resistor exceeds a set threshold;

[0026] The HVIC chip further includes an ITRIP port, the overcurrent protection circuit is connected to the ITRIP port, and the ITRIP port is pulled down to the VSS port through a filter capacitor inside the HVIC chip.

[0027] Preferably, in the intelligent power module of the integrated switching power supply described in the embodiment of the present application, the first triode transistor, the second triode transistor, the third triode transistor and the fourth triode transistor are all IGBT transistors;

[0028] Each IGBT transistor is connected to a fast recovery diode, wherein the anode of the fast recovery diode is connected to the source of the IGBT transistor, and the cathode of the fast recovery diode is connected to the drain of the IGBT transistor.

[0029] Preferably, in the intelligent power module of the integrated switching power supply of the embodiment of the present application, the gate of each IGBT transistor is connected to an IGBT gate drive resistor, and the IGBT gate drive resistor is provided inside the HVIC chip.

[0030] The embodiment of the present application uses a single HVIC chip to control a single-phase full-bridge circuit formed by two groups of triode transistors, and a switching power supply is integrated on the template. Only an external transformer is required to directly supply 15V voltage to the module, and then power amplification is performed through the HVIC chip and triode transistors to realize functions such as motor drive and inversion. It can also power devices such as the MCU control chip connected to the module. There is no need to connect an external switching power supply. The circuit design is simple and easy to use. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0032] Figure 1A This is a structural diagram of an intelligent power module with an integrated switching power supply in Example 1 of the present application.

[0033] Figure 1B This is a schematic diagram of an HVIC chip of an intelligent power module with an integrated switching power supply in Example 1 of the present application.

[0034] Figure 1C This is a side structural diagram of an intelligent power module with an integrated switching power supply in Example 1 of the present application.

[0035] Figure 2A This is a structural diagram of an intelligent power module with an integrated switching power supply in Example 2 of the present application.

[0036] Figure 2B This is a schematic diagram of an HVIC chip of an intelligent power module with an integrated switching power supply in Example 2 of the present application.

[0037] Figure 2C This is a side structural diagram of an intelligent power module with an integrated switching power supply in Example 2 of the present application. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application.

[0039] In the description of this application, it should be noted that the terms "inner" and "outer" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or the orientations or positional relationships in which the product of this application is typically placed when in use. These terms are intended solely to facilitate the description of this application and simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first" and "second" and the like are used solely for distinction and should not be construed as indicating or implying relative importance.

[0040] It should also be noted that, unless otherwise expressly specified or limited, the terms "disposed" and "connected" should be understood broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to direct connections, indirect connections through an intermediate medium, or internal connections between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0041] Please also refer to Figures 1A-1C , Figures 1A-1C This is a schematic diagram of the structure of Example 1 of the present application, wherein: Figure 1A This is a circuit structure diagram of an intelligent power module with an integrated switching power supply in Example 1 of the present application. It should be noted that: Figure 1AThe outer frame lines 88 in the figure are only schematic packaging lines of the intelligent power module of the embodiment of the present application, and do not refer to the connection lines of the various components or pins in the intelligent power module of the embodiment of the present application. The intelligent power module with an integrated switching power supply includes: an HVIC chip 10, which includes a VSS port, a high-side output port, and a low-side output port. The high-side port includes and only includes the HO1 port and the HO2 port, and the low-side output port includes and only includes the LO1 port and the LO2 port; an inverter unit, which includes and only includes a first triode transistor 20, a second triode transistor 30, a third triode transistor 40, and a fourth triode transistor 50. Among them, a first triode transistor 20 has a gate connected to the HO1 port, a drain connected to point P, and a source connected to point A; a second triode transistor 30 has a gate connected to the LO1 port, a drain connected to the source of the first triode transistor 20, and a source connected to the VSS port of the HVIC chip 10; a third triode transistor 40 has a gate connected to the HO2 port, a drain connected to the drain of the first triode transistor 20, and a source connected to point B; a fourth triode transistor 50 has a gate connected to the LO2 port, a drain connected to the source of the third triode transistor 40, and a source connected to the source of the second triode transistor 30; a switching power supply, which includes a power MOS transistor 11 and a control circuit 12, wherein the gate of the power MOS transistor 11 is connected to the control circuit 12, the drain is connected to point P, and the source is connected to the VSS port; the control circuit 12 is arranged inside the HVIC chip 10 and is used to control the on / off state and duty cycle of the power MOS transistor 11.

[0042] It should be noted that if Figure 1A As shown, point P is the high-voltage input terminal of the intelligent power module of the integrated control chip of the embodiment of the present application, point A is the first output terminal A of the intelligent power module of the integrated control chip of the embodiment of the present application, point B is the second output terminal B of the intelligent power module of the integrated control chip of the embodiment of the present application, and point N is the low-voltage reference terminal of the intelligent power module of the integrated control chip of the embodiment of the present application. In actual application, the first output terminal A and the second output terminal B are interfaces for the motor load, while point P is used to connect to the power supply of the motor load, and point N is connected to the source of the second triode transistor 30 and the fourth triode transistor 50, and is connected to the VSS port.

[0043] In Example 1, Figure 1BAs shown, in the intelligent power module of the integrated switching power supply according to the embodiment of the present application, the power MOS transistor 11 is a laterally diffused metal-oxide semiconductor field-effect transistor (LDMOS transistor), which is disposed within the HVIC chip 10. The LDMOS transistor is suitable for low-power applications. It should be noted that the LDMOS transistor is a 600V high-voltage MOS transistor, with its drain connected to the D pin on the module and its source connected to the S pin.

[0044] Furthermore, in the intelligent power module of the integrated switching power supply of Example 1 of the present application, the control circuit 12 includes a current detection control circuit, a logic circuit, a drive circuit, and a variable oscillator, and the HVIC chip 10 also includes a CONTROL port, a MODE port, and a FREQUENCY port; the current detection control circuit and the variable oscillator are both connected to the logic circuit, and the current detection control circuit is connected to the CONTROL port, and the variable oscillator is connected to the FREQUENCY port; the input end of the drive circuit is connected to the logic circuit, and the output end of the drive circuit is connected to the gate of the power MOS tube 11; and the logic circuit is connected to the MODE port. Among them, the current detection control circuit is used to detect the current size, and the variable oscillator is used to control the duty cycle of the power MOS tube 11 according to the current size detected by the current detection circuit. The larger the current, the smaller the duty cycle of the power MOS tube 11.

[0045] In addition, in some embodiments of the present application, a temperature protection module, a soft start module, an automatic restart module, and a protection mode selection module are provided in the logic circuit 12. The temperature protection module is used to protect the control circuit when the temperature exceeds a set threshold, the soft start module is used to reduce the impact of the starting current on the power MOS tube 11 and protect the device, the automatic start module is used for automatic startup, and the protection mode selection module is used to select a protection mode.

[0046] It should be noted that the CONTROL port, MODE port and FREQUENCY port of the HVIC chip 10 are led out as the CONTROL pin, MODE pin and FREQUENCY pin of the module. The CONTROL pin, MODE pin and FREQUENCY pin are connected to the MCU chip for receiving or feeding back corresponding signals to regulate the control circuit 12 and realize regulation of the switching power supply.

[0047] In practical applications, the intelligent power module of the integrated switching power supply of the embodiment of the present application further includes a Schottky diode and a high-voltage fast recovery diode combination 56, wherein the anode of the Schottky diode is connected to point P, and the cathode of the Schottky diode is connected to the cathode of the high-voltage fast recovery diode, and the anode of the cathode of the high-voltage fast recovery diode is connected to the drain of the power MOS transistor 11. The Schottky diode and high-voltage fast recovery diode combination 56 is used for bidirectional flyback or protection of the power MOS transistor 11.

[0048] Reference Figures 2A-2C , Figures 2A-2C This is a schematic diagram of the structure of Example 2 of the present application, wherein: Figure 2A This is a circuit structure diagram of an intelligent power module with an integrated switching power supply in Example 2 of the present application. It should be noted that: Figure 2A The outer frame line 88 in the figure is only a schematic diagram of the packaging of the intelligent power module of the embodiment of the present application, and does not refer to the connection lines of the components or pins in the intelligent power module of the embodiment of the present application. The structure of the intelligent power module of the integrated switching power supply of the embodiment 2 of the present application is similar to that of the embodiment 1 of the present application, except that: in the embodiment 2, as shown in FIG. Figure 2B As shown, the power MOS transistor 11 in Example 2 of the present application is a vertical double-diffused metal oxide semiconductor field effect transistor (VDMOS transistor), which is disposed outside the HVIC chip 10. VDMOS transistors are suitable for high-power applications. In Example 2 of the present application, the HVIC chip 10 is also provided with an LO3 port, through which the control circuit 12 is connected to the gate of the VDMOS transistor.

[0049] In some embodiments, the HVIC chip 10 further includes a VCC port, a HIN1 port, a HIN2 port, a LIN1 port, and a LIN2 port. The above-mentioned VCC port, HIN1 port, HIN2 port, LIN1 port, and LIN2 port are respectively derived as the VCC pin, HIN1 pin, HIN2 pin, LIN1 pin, and LIN2 pin of the entire intelligent power module. The VSS port is also derived as the VSS pin of the entire intelligent power module. The HIN1 pin, HIN2 pin, LIN1 pin, and LIN2 pin are all connected to the MCU chip for receiving corresponding control signals given by the MCU chip. Among them, the VCC port is the positive terminal of the power supply of the HVIC chip 10, the VSS port is the negative terminal of the power supply of the HVIC chip 10, the VSS pin is the common ground terminal of the intelligent power module, and the VSS pin is connected to the low voltage reference terminal N point.

[0050] In practical applications, the intelligent power module of the integrated switching power supply of the embodiment of the present application can supply 15V voltage to the module itself as long as an external transformer is connected, and can even supply 5V power to the MCU chip, etc., without the need for an external switching power supply, and the circuit design is simple. Specifically, one end of the primary coil of the transformer is connected to the high-voltage input terminal P point, and the other end is connected to the D pin led out of the drain of the power MOS tube 11. One end of its secondary coil is connected to the VCC pin of the module, and the other end is connected to the VSS pin to supply power to the HVIC chip 10. Therefore, through the control of the MCU chip, the on-off, duty cycle and current size of the power MOS tube 11 can be adjusted to control the current and on-off frequency of the transformer through the primary coil, so as to achieve the purpose of supplying power to the HVIC chip 10.

[0051] It should be noted that if Figure 1B and 2B As shown, Figure 1B This is a schematic diagram of an HVIC chip 10 of an intelligent power module in Example 1 of the present application. Figure 2B This is a schematic diagram of an HVIC chip 10 of an intelligent power module in Example 2 of the present application. The VCC pin of the intelligent power module is connected to the power supply circuit inside the HVIC chip 10 through the VCC port of the HVIC chip 10 to provide operating power to the HVIC chip 10. The HIN1 pin of the intelligent power module is connected to the first high-side drive circuit inside the HVIC chip 10 through the HIN1 port of the HVIC chip 10, and outputs a control signal through the HO1 port of the HVIC chip 10 to determine the on / off of the first triode transistor 20; the HIN2 pin of the intelligent power module is connected to the second high-side drive circuit inside the HVIC chip 10 through the HIN2 port of the HVIC chip 10, and outputs a control signal through the HO2 port of the HVIC chip 10 to determine the on / off of the third triode transistor 40; the LIN1 pin of the intelligent power module is connected to the first low-side drive circuit inside the HVIC chip 10 through the LIN1 port of the HVIC chip 10, and outputs a control signal through the LO1 port of the HVIC chip 10 to determine the on / off of the second triode transistor 30; the LIN2 pin of the intelligent power module is connected to the second low-side drive circuit inside the HVIC chip 10 through the LIN2 port of the HVIC chip 10, and outputs a control signal through the LO2 port of the HVIC chip 10 to determine the on / off of the fourth triode transistor 50.

[0052] The second triode 30 and the first triode 20 form a full-bridge circuit A1. The third triode 40 and the fourth triode 50 form a full-bridge circuit A2. In full-bridge circuit A1, only one of the first triode 20 and the second triode 30 can be turned on; in full-bridge circuit A2, only one of the third triode 40 and the fourth triode 50 can be turned on. Therefore, the first triode 20 and the fourth triode 50 form a group of paths, driven by the same set of signals and turned on / off simultaneously; the third triode 40 and the second triode 30 form another group of paths, driven by the same set of signals and turned on / off simultaneously.

[0053] In actual applications, the PWM waves sent by the MCU chip through the HIN1, HIN2, LIN1, and LIN2 ports are used to control the on / off of the four triode transistors via the level signals output by the HO1, HO2, LO1, and LO2 ports of the HVIC chip 10. One path, formed by the first triode transistor 20 and the fourth triode transistor 50, and one path, formed by the third triode transistor 40 and the second triode transistor 30, is turned on to achieve variable frequency drive of the motor.

[0054] It should be noted that, accordingly, interlocking and dead zone circuits are provided between the first high-side drive circuit and the second low-side drive circuit, and between the second high-side drive circuit and the first low-side drive circuit inside the HVIC chip 10, so as to ensure that only one of the two triode transistors in the full-bridge circuit can be turned on to prevent short circuit.

[0055] It should be further explained that the HVIC chip 10 is also internally provided with a power undervoltage protection circuit, which is connected to the power circuit to protect the intelligent power module and devices. Furthermore, the two high-side drive circuits are also connected to the high-side undervoltage protection circuit to protect the intelligent power module and devices.

[0056] Furthermore, in some embodiments, the intelligent power module further includes a first bootstrap capacitor 101 and a second bootstrap capacitor 102. The HVIC chip 10 further includes a VB1 port and a VS1 port, and a VB2 port and a VS2 port. The VB1 port is connected to the VS1 port via the first bootstrap capacitor 101. The VB2 port is connected to the VS2 port via the second bootstrap capacitor 102. The VB1 port is the positive power supply terminal of the first bootstrap capacitor 101, and the VS1 port is the negative power supply terminal of the first bootstrap capacitor 101; the VB2 port is the positive power supply terminal of the second bootstrap capacitor 102, and the VS2 port is the negative power supply terminal of the second bootstrap capacitor 102. The first bootstrap capacitor 101 and the second bootstrap capacitor 102 are used for energy storage and power supply (or voltage boosting), providing a voltage boost for the power supply of the HVIC chip 10. The intelligent power module also includes two bootstrap diodes. The VCC port of the HVIC chip 10 is connected to the anodes of the two bootstrap diodes through the power supply circuit. The cathodes of the two bootstrap diodes are connected to the first bootstrap capacitor 101 and the second bootstrap capacitor 102 via the VB1 port and the VB2 port, respectively. The bootstrap diodes are used for rectification to prevent current backflow and protect the power supply circuit. In existing intelligent power modules, the configuration is mostly a three-way full-bridge driver IC + six triode transistors, which makes the module package area too large and makes it difficult to place the high-power device bootstrap capacitor inside the module. The only option is to connect the corresponding bootstrap capacitor externally. However, the external bootstrap capacitor makes the module less usable and less reliable.

[0057] In some embodiments, the intelligent power module further includes a sampling resistor 55, one end of which is connected to the source of the second triode transistor 30 and the source of the fourth triode transistor 50, and the other end is connected to the VSS port and the low voltage reference terminal N. Furthermore, the HVIC chip 10 is provided with an ITRIP port, which is an overcurrent protection port of the HVIC chip 10. The HVIC chip 10 is provided with an overcurrent protection circuit, which is connected to the ITRIP port, and the ITRIP port is pulled down to the VSS port through a filter capacitor inside the HVIC chip 10.

[0058] Of course, it can be understood that in some embodiments, the HVIC chip 10 is also provided with an over-temperature protection switch, an over-voltage protection switch, an enable protection switch, an error reporting circuit, etc. For the over-temperature protection switch, the over-voltage protection switch, the enable protection switch, and the error reporting circuit, the HVIC chip 10 is correspondingly provided with a VTS port, an OV port, an EN port, and a FO port. The above-mentioned VTS port, EN port, and FO port can be connected to the MCU chip through a universal I / O interface, and correspondingly receive or feedback corresponding signals to the MCU chip, while the OV port is connected to the high-voltage input terminal P point to detect whether the voltage at the high-voltage input terminal P point exceeds the set threshold value, and the device is included. Among them, the over-temperature protection switch is a positive temperature coefficient temperature protection switch. In addition, the FO port of the HVIC chip 10 is internally pulled up to the VCC port through a resistor.

[0059] In some embodiments, the first triode transistor 20, the second triode transistor 30, the third triode transistor 40, and the fourth triode transistor 50 of the intelligent power module of the integrated switching power supply of the embodiments of the present application are one of an IGBT transistor, a reverse-conducting IGBT transistor, or a MOSFET transistor. In the intelligent power module of the integrated switching power supply in Examples 1 and 2 of the present application, the first triode transistor 20, the second triode transistor 30, the third triode transistor 40, and the fourth triode transistor 50 are all IGBT transistors. Each IGBT transistor 18 is connected to a fast recovery diode 19, the anode of the fast recovery diode 19 is connected to the source of the IGBT transistor 18, and the cathode of the fast recovery diode 19 is connected to the drain of the IGBT transistor 18.

[0060] Furthermore, in Examples 1 and 2 of the present application, the gate of each IGBT transistor 18 is connected to an IGBT gate drive resistor, which is provided inside the HVIC chip 10 to prevent the driving current from being instantaneously too large and causing oscillation.

[0061] like Figure 1C As shown, Figure 1C This is a side structural diagram of an intelligent power module with an integrated control chip in Example 1 of this application. Figure 1CIn the illustrated embodiment, the HVIC chip 10 and the Schottky diode and high-voltage fast recovery diode combination 56 are bonded to the insulating substrate 15 using silver glue or solder, and the IGBT transistor 18 and the fast recovery diode 19 are bonded to the insulating substrate 15 using solder; the HVIC chip 10 and the Schottky diode and high-voltage fast recovery diode combination 56 are then connected to the insulating substrate circuit using gold, copper, aluminum, or other bonding wires 14, and the IGBT transistor 18 is connected to the insulating substrate circuit or the HVIC chip 10 using aluminum bonding wires; the lead frame 16 is bonded to the insulating substrate 15 using solder; and finally, the substrate and all chips and bonding wires are encapsulated using epoxy molding material 17, leaving only the pins exposed.

[0062] like Figure 2C As shown, Figure 2C This is a side structural diagram of an intelligent power module with an integrated control chip in Example 2 of this application. Figure 2C In the illustrated embodiment, the HVIC chip 10, the Schottky diode and high-voltage fast recovery diode combination 56, and the power MOS transistor 11 are bonded to the insulating substrate 15 using silver glue or solder, and the HVIC chip 10, the Schottky diode and high-voltage fast recovery diode combination 56, and the power MOS transistor 11 are connected to the insulating substrate circuit using gold, copper, aluminum, or other bonding wires 14, and the HVIC chip 10 is connected to the power MOS transistor 11 using gold, copper, aluminum, or other bonding wires 14.

[0063] The intelligent power module of the present application embodiment forms a four-way drive circuit on the HVIC chip, namely two channels of high-side drive circuits and two channels of low-side drive circuits, and internally includes upper and lower bridge drivers, enable, undervoltage, overcurrent, overvoltage, overtemperature, error reporting and other functional circuits, as well as a bootstrap circuit. The HVIC chip, IGBT transistors, fast recovery diodes, bootstrap capacitors, and sampling resistors form an IPM circuit to achieve the complete function of a single-phase full-bridge IPM without the need for external bootstrap capacitors, sampling resistors, etc.; and an integrated switching power supply on the module, which includes an oscillator with adjustable duty cycle, a current detection circuit, a logic circuit, and a drive circuit. The duty cycle of the power MOS tube is controlled according to the current detected by the current detection circuit; and two connection methods for the switching power supply device are designed, namely, a 600V high-voltage LDMOS tube is integrated inside the HVIC chip or an external VDMOS tube is connected, corresponding to low-power applications and high-power applications. Both connection methods do not require external access to the switching power supply, simplifying the circuit design and making it easy to use.

[0064] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. An intelligent power module with an integrated switching power supply, characterized in that: include: An HVIC chip comprising a VSS port, a high-side output port, and a low-side output port, wherein the high-side output port comprises only an HO1 port and an HO2 port, and the low-side output port comprises only an LO1 port and an LO2 port; an inverter unit, wherein the inverter unit comprises only a first triode transistor, a second triode transistor, a third triode transistor, and a fourth triode transistor; The first triode transistor has a gate connected to the HO1 port, a drain connected to point P, and a source connected to point A; The second triode transistor has a gate connected to the LO1 port, a drain connected to the source of the first triode transistor, and a source connected to the VSS port of the HVIC chip; The third triode transistor has a gate connected to the HO2 port, a drain connected to the drain of the first triode transistor, and a source connected to point B; the fourth triode transistor, having a gate connected to the LO2 port, a drain connected to the source of the third triode transistor, and a source connected to the source of the second triode transistor; A switching power supply comprising a power MOS transistor and a control circuit; the gate of the power MOS transistor is connected to the control circuit, the drain of the power MOS transistor is connected to point P, and the source of the power MOS transistor is connected to the VSS port; the control circuit is disposed within the HVIC chip; the power MOS transistor is a laterally diffused metal oxide semiconductor field effect transistor or a vertical double diffused metal oxide semiconductor field effect transistor; When the power MOS tube is a laterally diffused metal oxide semiconductor field effect transistor, the laterally diffused metal oxide semiconductor field effect transistor is arranged inside the HVIC chip; When the power MOS tube is a vertical double diffused metal oxide semiconductor field effect transistor, the vertical double diffused metal oxide semiconductor field effect transistor is arranged outside the HVIC chip; The control circuit includes a current detection control circuit, a logic circuit, a drive circuit and a variable oscillator, and the HVIC chip also includes a CONTROL port, a MODE port and a FREQUENCY port; The current detection control circuit and the variable oscillator are both connected to the logic circuit, and the current detection control circuit is connected to the CONTROL port, and the variable oscillator is connected to the FREQUENCY port; the input end of the drive circuit is connected to the logic circuit, and the output end of the drive circuit is connected to the gate of the power MOS tube; the logic circuit is connected to the MODE port.

2. The intelligent power module of the integrated switching power supply according to claim 1, characterized in that: The logic circuit is provided with a temperature protection module, a soft start module, an automatic restart module and a protection mode selection module.

3. The intelligent power module of the integrated switching power supply according to claim 1, characterized in that: Also includes Schottky diodes and high-voltage fast recovery diodes; The anode of the Schottky diode is connected to point P, and the cathode of the Schottky diode is connected to the cathode of the high-voltage fast recovery diode. The anode of the cathode of the high-voltage fast recovery diode is connected to the drain of the power MOS tube.

4. The intelligent power module of the integrated switching power supply according to claim 1, characterized in that: Also comprising a first bootstrap capacitor and a second bootstrap capacitor; The HVIC chip further includes a VB1 port and a VS1 port, wherein the VB1 port is connected to the VS1 port via the first bootstrap capacitor; the HVIC chip further includes a VB2 port and a VS2 port, wherein the VB2 port is connected to the VS2 port via a second bootstrap capacitor.

5. The intelligent power module of the integrated switching power supply according to claim 1, characterized in that: Also includes a sampling resistor; A first end of the sampling resistor is connected to the source of the second triode transistor, and a second end of the sampling resistor is connected to the VSS port; An overcurrent protection circuit is provided in the HVIC chip, which is used to stop working when the current collected by the sampling resistor exceeds a set threshold; The HVIC chip further includes an ITRIP port, the overcurrent protection circuit is connected to the ITRIP port, and the ITRIP port is pulled down to the VSS port through a filter capacitor inside the HVIC chip.

6. The intelligent power module of the integrated switching power supply according to claim 1, characterized in that: The first triode transistor, the second triode transistor, the third triode transistor and the fourth triode transistor are all IGBT transistors; Each IGBT transistor is connected to a fast recovery diode, wherein the anode of the fast recovery diode is connected to the source of the IGBT transistor, and the cathode of the fast recovery diode is connected to the drain of the IGBT transistor.

7. The intelligent power module of the integrated switching power supply according to claim 6, characterized in that: The gate of each IGBT transistor is connected to an IGBT gate drive resistor, and the IGBT gate drive resistor is arranged inside the HVIC chip.

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