IGBT power semiconductor testing equipment

Abstract

The present invention provides an IGBT power semiconductor test device, which relates to an IGBT power semiconductor test technology. It solves the problem that the main circuit of the test device in the prior art will bring unnecessary stray inductance. The IGBT power semiconductor test device includes an IGBT double pulse test circuit, the IGBT double pulse test circuit has a multi-stage test inductance load, and the high-voltage capacitor of the IGBT double pulse test circuit is a busbar capacitor group, the busbar capacitor group is formed by low-inductance energy storage capacitors connected in parallel through a laminated busbar, and the laminated busbar capacitor group has a symmetrical capacitor connection port; each low-inductance energy storage capacitor is connected in parallel with a high-frequency absorption capacitor to absorb the voltage spikes generated during the test. The present invention realizes the test of the dynamic working characteristics and losses of power semiconductor modules such as IGBT, reduces the influence of stray inductance in the circuit on the test results, and improves the overall test accuracy.

Description

Technical Field

[0001] The invention belongs to the technical field of power semiconductors, in particular to an IGBT power semiconductor testing technology. Background Art

[0002] Usually, we mainly know a certain IGBT by reading the corresponding data sheet. The parameters described in the data sheet are obtained based on some given external parameter conditions. The external parameters in actual applications are personalized and often different. Therefore, some of these parameters cannot be used directly. Therefore, the performance of IGBT can be more accurately evaluated through double pulse testing, such as patents: CN201510144297.3 A test method and test circuit for dynamic equalizing characteristics and reverse recovery characteristics of SiC IGBT series valve group; CN201910828489.4 A press-fit IGBT module test system and test method; CN201610890393.7 A test method and device for testing IGBT dynamic switching characteristics using double pulse technology; CN201610893753.9 A high-power IGBT dynamic test circuit and control method. However, the main circuit of the test equipment will bring unnecessary stray inductance, which seriously affects the accuracy of the test results. Reducing the stray inductance parameters in the test circuit is the key to accurate testing. Summary of the invention

[0003] The purpose of the present invention is to solve the above problems in the prior art and to provide an IGBT power semiconductor test device. The IGBT power semiconductor test device can reduce the stray inductance in the test loop.

[0004] The purpose of the present invention can be achieved through the following technical solutions:.

[0005] In certain embodiments, it includes an IGBT double pulse test circuit, characterized in that the IGBT double pulse test circuit has a multi-stage test inductive load, and the high-voltage capacitor of the IGBT double pulse test circuit is a busbar capacitor group, and the busbar capacitor group is formed by low-inductance energy storage capacitors connected in parallel through a laminated busbar, and the laminated busbar capacitor group has a symmetrical capacitor connection port; each low-inductance energy storage capacitor is connected in parallel with a high-frequency absorption capacitor to absorb voltage spikes generated during the test.

[0006] In some embodiments, it also includes a negative copper busbar, a load copper busbar, a load copper busbar, a first load connection block, a second load connection block, a third load connection block, and a fourth load connection block; wherein the negative copper busbar is connected to the negative pole of the laminated busbar, and the load copper busbar is connected to the positive pole of the laminated busbar; the load copper busbar is installed between the negative copper busbar and the load copper busbar through an insulating block, and the negative copper busbar, the load copper busbar, and the load copper busbar are in the same plane.

[0007] In some embodiments, the multi-stage test inductive load is a first air-core inductor, a second air-core inductor, a third air-core inductor, and a fourth air-core inductor, one end of which is commonly connected to the load copper busbar, the other end of the first air-core inductor is connected to the first load connection block, the second air-core inductor is connected to the second load connection block, the third air-core inductor is connected to the third load connection block, and the fourth air-core inductor is connected to the fourth load connection block, and the first load connection block, the second load connection block, the third load connection block, and the fourth load connection block are respectively connected to the copper busbar through insulating blocks; at the negative copper busbar, the first load connection block is connected to the second load connection block, the third load connection block is connected to the third load connection block, and the fourth load connection block is connected to the copper busbar through insulating blocks; Four copper bar static contacts corresponding to the static contacts of the upper connection blocks of the four load connection blocks are connected above, and four copper bar static contacts corresponding to the static contacts of the lower connection blocks of the four load connection blocks are connected below the negative copper bar, so that each connection block static contact and a copper bar static contact form a contact pair, and a telescopic contact block is provided corresponding to each contact pair, and two telescopic contact block contacts corresponding to the contact pair are provided on the telescopic contact block, and the two contacts on the telescopic contact block are electrically connected, and the contact block telescopic cylinder controls the movement of the telescopic contact block relative to the copper bar to realize the on-off connection of the electrical connection between the connection block static contact and the copper bar static contact.

[0008] In some embodiments, a short-circuit test circuit is further included, wherein the short-circuit test circuit includes a first short-circuit fixed contact pair respectively fixed to the negative copper busbar and the load copper busbar, and a second short-circuit fixed contact pair respectively fixed to the load copper busbar and the positive copper busbar, and a first short-circuit telescopic contact block and a second short-circuit telescopic contact block are respectively provided corresponding to the first short-circuit fixed contact pair and the second short-circuit fixed contact pair; two contacts corresponding to the short-circuit fixed contact pair are provided on the telescopic contact block, and the first short-circuit telescopic cylinder and the second short-circuit telescopic cylinder control the movement of the telescopic contact block relative to the short-circuit fixed contact pair, thereby controlling the on and off of the short-circuit fixed contact pair.

[0009] In some embodiments, the product testing probe of the testing device is arranged under the needle bed, and a product tray to be tested is arranged under the needle bed. The product tray to be tested is controlled by a lifting device to rise and fall relative to the needle bed so that the probe can contact or leave the corresponding contact point of the product to be tested.

[0010] In certain embodiments, a short-circuit test circuit is further included, wherein the short-circuit test circuit includes a first short-circuit fixed contact pair respectively fixed to the negative copper busbar and the load copper busbar, and a second short-circuit fixed contact pair respectively fixed to the load copper busbar and the positive copper busbar; a first short-circuit telescopic contact block and a second short-circuit telescopic contact block are respectively provided corresponding to the first short-circuit fixed contact pair and the second short-circuit fixed contact pair; two contacts corresponding to the short-circuit fixed contact pair are provided on the telescopic contact block, and the two contacts on the telescopic contact block are electrically connected; the first short-circuit telescopic cylinder and the second short-circuit telescopic cylinder control the movement of the telescopic contact block relative to the short-circuit fixed contact pair, thereby controlling the on and off of the short-circuit fixed contact pair.

[0011] In some embodiments, a conveyor belt for conveying the product to be tested is arranged under the needle bed, the product tray to be tested has support legs, and the product tray to be tested is supported on the test product conveying track by lifting legs, and the lifting legs include a scissors-type lifting mechanism, the inner end of the rod body at the upper part of the scissors-type lifting mechanism is connected to the telescopic device, the outer end of the rod body above the scissors-type lifting mechanism is hinged to the end of the guide rod, the guide rod is slidably arranged on the guide seat, and the guide seat is fixed on the product tray to be tested, the telescopic direction of the telescopic device is perpendicular to the moving direction of the product tray to be tested, and two groups of conveyor belts are arranged in parallel on the product conveying track to be tested, which are defined as an inner conveyor belt and an outer conveyor belt, and the two conveyor belts are driven by independent driving devices respectively, and sliding sleeves are arranged on the two middle hinge shafts of the rod body at the bottom of the scissors-type lifting mechanism, and a support rod is slidably matched in the sliding sleeve, and the lower end of the support rod is supported by casters, so that the scissors-type lifting mechanism is supported on the casters.

[0012] Compared with the existing technology, this IGBT power semiconductor test equipment has the following advantages:

[0013] The present invention realizes the test of dynamic working characteristics and loss of power semiconductor modules such as IGBT, reduces the influence of stray inductance in the loop on the test result, improves the overall test accuracy, and reduces the stray inductance parameters in the test loop by using specific laminated busbars, specific loop connection methods, and specific switch contacts. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In the accompanying drawings (which are not necessarily drawn to scale), like reference numerals may describe similar components in different views. Like reference numerals with different letter suffixes may represent different examples of similar components. The accompanying drawings generally illustrate various embodiments discussed herein by way of example and not limitation.

[0015] Figure 1 is the test circuit schematic;

[0016] Figure 2 is a schematic diagram of the test apparatus;

[0017] Figure 3 yes Figure 2 Schematic diagram of top view;

[0018] Figure 4 yes Figure 2 Schematic diagram without the telescopic cylinder;

[0019] Figure 5 yes Figure 4 Schematic diagram of top view;

[0020] Figure 6 is a schematic diagram of the contact block telescopic cylinder;

[0021] Figure 7 is a schematic diagram of the first recovery telescopic cylinder;

[0022] Figure 8 It is a schematic diagram of the second embodiment.

[0023] In the figure, negative copper bar 1, load copper bar 2, positive copper bar 3, IGBT 4, energy storage capacitor 5, needle bed 6, tray 7;

[0024] Scissor lift mechanism 8, inner end 801, outer end 802, sliding sleeve 803, telescopic device 9, guide rod 10, guide seat 101, inner conveyor belt 11, outer conveyor belt 12, driving wheel 13, support rod 131;

[0025] Laminated busbar 14, first air-core inductor 151, second air-core inductor 152, third air-core inductor 153, fourth air-core inductor 154, first load connection block 161, second load connection block 162, third load connection block 163, fourth load connection block 164; connection block static contact 160, copper bus static contact 101;

[0026] Telescopic contact block 17, telescopic contact block contact 171, contact block telescopic cylinder 18;

[0027] A first short-circuit fixed contact pair 191, a second short-circuit fixed contact pair 192, a first short-circuit telescopic contact block 201, a second short-circuit telescopic contact block 202, a first short-circuit telescopic cylinder 211 and a second short-circuit telescopic cylinder 212;

[0028] Fast recovery diode 22, diode moving cylinder 23, first recovery fixed contact pair 241, second recovery fixed contact pair 242, first recovery telescopic contact block 251, second recovery telescopic contact block 252, first recovery telescopic cylinder 261, second recovery telescopic cylinder 262. DETAILED DESCRIPTION

[0029] The following are specific embodiments of the present invention, and the technical solutions of the present invention are further described in conjunction with the accompanying drawings, but the present invention is not limited to these embodiments, and the following embodiments do not limit the invention involved in the claims. In addition, all combinations of the features described in the embodiments are not necessarily required for the solutions of the invention.

[0030] It should be understood by those skilled in the art that all directional references (e.g., above, below, upward, up, down, down, top, bottom, left, right, vertical, horizontal, etc.) are used descriptively in the drawings to aid the reader's understanding and do not represent limitations (e.g., to position, orientation, or use, etc.) on the scope of the present invention as defined by the appended claims. In addition, the term "substantially" may refer to slight inaccuracies or slight deviations of conditions, amounts, values, or dimensions, etc., some of which are within manufacturing deviations or tolerances.

[0031] Example

[0032] like Figures 1 to 7 As shown, an IGBT power semiconductor test device includes a test circuit composed of a high-voltage DC power supply, an energy storage capacitor 5, a multi-stage test inductor as a load, and a product under test DUT. The product under test DUT includes two upper and lower IGBTs, each of which has an anti-parallel diode. Before the test, the high-voltage DC power supply charges the energy storage capacitor, which provides electrical energy during the test. The IGBT is tested by applying a double pulse to the base of the IGBT, wherein the pulse transmission is implemented by a NI7841 board with FPGA programming function. The signal acquisition system can be composed of a high-voltage isolation probe, a current shunt, a Rogowski coil, a current transformer, an oscilloscope and other test devices, and the product test probe is used to achieve contact or separation with the product under test IGBT4, thereby obtaining the electrical signal changes of the IGBT under the action of the double pulse.

[0033] The product testing probe is arranged under the needle bed 6, and a product tray 7 to be tested is arranged under the needle bed. The product tray to be tested is controlled by a lifting device to rise and fall relative to the needle bed so that the probe can contact or leave the corresponding contact point of the product to be tested.

[0034] The test waveform can be displayed by an oscilloscope and the test data can be stored in a PC through LAN communication. The data can be processed by a LabVIEW host computer algorithm, and finally specific test indicators can be displayed on the PC to judge the performance of the tested components.

[0035] The main line of the circuit line is in the form of a copper bar, including a negative copper bar 1, a load copper bar 2, and a positive copper bar 3 with the same physical structure; the load copper bar 2 is installed between the negative copper bar 1 and the positive copper bar 3 through an insulating block, and the negative copper bar 1, the load copper bar 2, and the positive copper bar 3 are in the same plane, and the negative copper bar 1 and the positive copper bar 3 are symmetrical about the load copper bar 2, thereby ensuring the formation of current mutual inductance and reducing the stray inductance generated by the current in the loop. The copper bars are separated by insulating materials to prevent short circuits.

[0036] The energy storage capacitor of the IGBT double pulse test circuit is a busbar capacitor group, which is composed of a laminated busbar 14 and 12 low-inductance energy storage capacitors, wherein the 12 low-inductance energy storage capacitors are connected to the busbar in parallel, and the laminated busbar is pressed by positive and negative thin copper bars and insulating sheets. The specially made laminated busbar has positive and negative output ports in the middle, and 6 capacitor connection ports are symmetrically arranged on both sides to achieve symmetrical functions and reduce stray inductance. One side of the laminated busbar is provided with positive and negative wiring terminals for external charging, discharging, and voltage monitoring. Among them, the negative copper bar 1 is connected to the negative pole of the laminated busbar, and the positive copper bar 3 is connected to the positive pole of the laminated busbar.

[0037] Each of the energy storage capacitors is connected in parallel with a high-frequency absorption capacitor to absorb voltage spikes generated during the test process.

[0038] The energy storage capacitor has a discharge circuit, which includes a high-voltage contactor and a high-voltage power resistor. The high-voltage contactor is closed to discharge energy from the busbar capacitor group. The high-voltage contactor is normally closed. In the default state, a closed circuit is formed with the busbar capacitor group to ensure the safety of the main test circuit. The circuit is opened only during testing.

[0039] The IGBT double pulse test circuit has a multi-stage test inductor load, which is the first air-core inductor 151, the second air-core inductor 152, the third air-core inductor 153, and the fourth air-core inductor 154, wherein the inductance of the first air-core inductor is 100uH, the inductance of the second air-core inductor is 200uH, the inductance of the third air-core inductor is 500uH, and the inductance of the fourth air-core inductor is 1000uH. The purpose of the multi-stage test inductor load grading is: for small current testing, switch to large inductance to slow down the current building rate and facilitate control; for large current testing, switch to small inductance to increase the current building rate.

[0040] The hollow inductor is wound by a special film-wrapped wire, wherein the film-wrapped wire is specifically twisted by 1000 strands of 0.08 mm enameled wire, and the outer film of the film-wrapped wire is specifically composed of a high-temperature resistant polyimide film, wherein both sides of the polyimide film are adhesively treated so that the outer film and the enameled twisted wire can be tightly bonded. At the same time, during the process of winding the coil, the outer films can also be bonded by hot air treatment, so that the hollow inductor is more compact and the stability of the hollow inductor is enhanced.

[0041] One ends of the first air-core inductor, the second air-core inductor, the third air-core inductor and the fourth air-core inductor are commonly connected to the load copper bus 2 .

[0042] The other end of the first air-core inductor is connected to the first load connection block 161 , the second air-core inductor is connected to the second load connection block 162 , the third air-core inductor is connected to the third load connection block 163 , and the fourth air-core inductor is connected to the fourth load connection block 164 .

[0043] The first load connection block, the second load connection block, the third load connection block and the fourth load connection block are respectively connected to the load copper bus 2 through insulating blocks, and each load connection block has a connection block static contact 160 at both upper and lower ends.

[0044] Four copper bar static contacts 101 corresponding to the static contacts of the upper connection blocks of the four load connection blocks are connected above the negative copper bar 1, and four copper bar static contacts corresponding to the static contacts of the lower connection blocks of the four load connection blocks are connected below the negative copper bar 3, so that each connection block static contact and a copper bar static contact constitute a contact pair, and a telescopic contact block 17 is provided corresponding to each contact pair, and two telescopic contact block contacts 171 corresponding to the contact pair are provided on the telescopic contact block, and the two contacts on the telescopic contact block are electrically connected. The contact block telescopic cylinder 18 controls the movement of the telescopic contact block relative to the copper bar to realize the on-off of the electrical connection between the connection block static contact and the copper bar static contact, that is, to realize the switching of the power loads with different inductance values, and the telescopic contact block corresponds to the T1 to T8 contact switches in the circuit diagram.

[0045] It also includes a short-circuit test circuit, which includes a first short-circuit fixed contact pair 191 fixed to the negative copper bar 1 and the load copper bar 2, and a second short-circuit fixed contact pair 192 fixed to the load copper bar 2 and the positive copper bar 3. Corresponding to the first short-circuit fixed contact pair and the second short-circuit fixed contact pair, a first short-circuit telescopic contact block 201 and a second short-circuit telescopic contact block 202 are respectively provided; the telescopic contact block is provided with two contacts corresponding to the short-circuit fixed contact pair, and the two contacts on the telescopic contact block are electrically connected. The first short-circuit telescopic cylinder 211 and the second short-circuit telescopic cylinder 212 control the movement of the telescopic contact block relative to the short-circuit fixed contact pair, thereby controlling the on and off of the short-circuit fixed contact pair, corresponding to the T11 and T12 contact switches in the circuit diagram.

[0046] It also includes two fast recovery diodes 22, which are current-resistant diodes. Each of the current-resistant diodes is controlled by a diode moving cylinder 23 to contact or separate from the negative copper bus 1, the load copper bus 2 and the positive copper bus 3.

[0047] It includes a first restoration fixed contact pair 241 respectively fixed to the negative copper bar 1 and the load copper bar 2, and a second restoration fixed contact pair 242 respectively fixed to the load copper bar 2 and the positive copper bar 3.

[0048] A first recovery telescopic contact block 251 and a second recovery telescopic contact block 252 are respectively provided corresponding to the first recovery fixed contact pair and the second recovery fixed contact pair;

[0049] Two contacts corresponding to the restoration fixed contact pair are provided on the restoration telescopic contact block. The two contacts on the restoration telescopic contact block are electrically connected. The first restoration telescopic cylinder 261 and the second restoration telescopic cylinder 262 control the movement of the telescopic contact block relative to the restoration fixed contact pair, thereby controlling the on and off of the restoration fixed contact pair, corresponding to the T9 and T10 contact switches in the circuit diagram.

[0050] Embodiment 2

[0051] like Figure 8 As shown, a conveyor belt for conveying the product to be tested is arranged below the needle bed, and the product tray to be tested has support legs, and the product tray to be tested is supported on the product conveying track by the lifting legs. The lifting legs include a scissor lift mechanism 8, which is a parallelogram deformation mechanism formed by a plurality of parallel rods hingedly connected, and is often used on scissor lift vehicles. The inner end 801 of the rod body at the upper part of the scissor lift mechanism is connected to the telescopic device 9, which can be a linear motor, etc. The outer end 802 of the rod body above the scissor lift mechanism is hingedly connected to the end of the guide rod 10, and the guide rod is slidably arranged on the guide seat 101, and the guide seat is fixed on the product tray to be tested.

[0052] The telescopic direction of the telescopic device is perpendicular to the moving direction of the pallet of the product to be tested (i.e., the direction of the guide rail). Two groups of conveyor belts are arranged side by side on the conveying track of the product to be tested, which are defined as an inner conveyor belt 11 and an outer conveyor belt 12. The two conveyor belts are driven by independent driving devices respectively, so that they have different speeds or conveying directions. Each group of conveyor belts has two synchronous conveyor belt bodies. Slide sleeves 803 are arranged on the two middle hinge shafts of the rod body at the bottom of the scissor lift mechanism, and a support rod 131 is slidably matched in the slide sleeve. The lower end of the support rod is supported by a caster 13, so that the scissor lift mechanism is supported on the caster to facilitate its movement between the inner and outer conveyor belts. The outer conveyor belt can remain stationary under normal conditions.

[0053] The inner conveyor belt 11 drives multiple trays to move. When a tray is located under the needle bed, if it is necessary to detect the product on the tray,

[0054] The telescopic device can be extended to push the scissor lift mechanism toward both sides of the product pallet to be tested, so that the scissor lift mechanism moves to the outside below the product pallet to be tested, that is, the caster moves from the inner conveyor belt 11 to the outer conveyor belt 12, and the end of the guide rod 10 is stuck on the guide seat and cannot continue to move outward, and the telescopic device continues to extend to extend the scissor lift mechanism, that is, the product pallet to be tested is raised, so that the needle bed probe contacts the product to realize detection.

[0055] The other pallet telescopic devices on the inner conveyor are in a retracted state so that they can pass under the raised pallets without affecting the conveyance of these pallets to other stations for other operations.

[0056] After the test, the pallet can be reversely deformed, i.e., retracted, by the scissor lift mechanism, so that the casters are moved from the outer conveyor belt 12 to the inner conveyor belt 11 and are continuously brought to the next station. In this way, the test can be carried out without affecting the transmission of other products.

[0057] Although some terms are used more frequently in this article, the possibility of using other terms is not excluded. These terms are used only to more conveniently describe and explain the essence of the present invention; interpreting them as any additional restrictions is contrary to the spirit of the present invention. The execution order of actions, steps, etc. in the devices and methods shown in the specification and the drawings can be implemented in any order as long as there is no special explicit limitation on the order and the output of the previous processing is not used in the subsequent processing. The use of "first", "next", etc. for the convenience of description does not mean that it must be implemented in such an order.

[0058] The specific embodiments described herein are merely examples of the spirit of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, but they will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

Claims

1. An IGBT power semiconductor test device, comprising an IGBT double pulse test circuit, It is characterized in that The IGBT double pulse test circuit has a multi-stage test inductive load. The high-voltage capacitor of the IGBT double pulse test circuit is a busbar capacitor group. The busbar capacitor group is formed by connecting low-inductance energy storage capacitors in parallel through laminated busbars. The laminated busbar capacitor group has a symmetrical capacitor connection port; each low-inductance energy storage capacitor is connected in parallel with a high-frequency absorption capacitor to absorb the voltage spikes generated during the test; the high-voltage capacitor has a discharge circuit, which includes a high-voltage contactor and a high-voltage power resistor. The closed high-voltage contactor is used to discharge the busbar capacitor group. The high-voltage contactor is normally closed; the hollow inductor of the multi-stage test inductive load is wound by a special film-wrapped wire, which is made of 1000 strands of 0.08mm enameled wire are twisted, and the outer membrane of the membrane-covered wire is composed of a high-temperature resistant polyimide film, and the polyimide film is adhesively treated on both sides; the product test probe of the test device is arranged under the needle bed, and a product tray to be tested is arranged under the needle bed, and a conveyor belt for conveying the product to be tested is arranged under the needle bed, and the product tray to be tested has support legs, and the product tray to be tested is supported on the product conveying track to be tested by lifting legs, and the lifting legs include a scissor lift mechanism, and the inner end of the rod body on the upper part of the scissor lift mechanism is connected to the telescopic device, and the outer end of the rod body above the scissor lift mechanism is hinged to the end of the guide rod, and the guide rod is slidably arranged on the guide seat, and the guide The seat is fixed on the pallet of the product to be tested, the telescopic direction of the telescopic device is perpendicular to the moving direction of the pallet of the product to be tested, two sets of conveyor belts are arranged in parallel on the conveying track of the product to be tested, and the scissor lift mechanism is supported on casters; the multi-level test inductive load is a first hollow inductor, a second hollow inductor, a third hollow inductor, and a fourth hollow inductor, one end of which is commonly connected to the load copper bus, the other end of the first hollow inductor is connected to the first load connection block, the second hollow inductor is connected to the second load connection block, the third hollow inductor is connected to the third load connection block, the fourth hollow inductor is connected to the fourth load connection block, the first load connection block, the second load connection block, the third load connection block, the fourth ... The four load connection blocks are connected to the copper busbar through insulating blocks respectively; four copper busbar static contacts corresponding to the static contacts of the upper connection blocks of the four load connection blocks are connected above the negative copper busbar, and four copper busbar static contacts corresponding to the static contacts of the lower connection blocks of the four load connection blocks are connected below the negative copper busbar, so that each connection block static contact and a copper busbar static contact form a contact pair, and a telescopic contact block is provided corresponding to each contact pair, and two telescopic contact block contacts corresponding to the contact pair are provided on the telescopic contact block, and the two contacts on the telescopic contact block are electrically connected, and the contact block telescopic cylinder controls the movement of the telescopic contact block relative to the copper busbar to realize the on-off of the electrical connection between the connection block static contact and the copper busbar static contact.

2. The IGBT power semiconductor testing device according to claim 1, It is characterized in that It also includes a negative copper bar, a load copper bar, a load copper bar, a first load connection block, a second load connection block, a third load connection block, and a fourth load connection block; wherein the negative copper bar is connected to the negative pole of the laminated busbar, and the load copper bar is connected to the positive pole of the laminated busbar; the load copper bar is installed between the negative copper bar and the load copper bar through an insulating block, and the negative copper bar, the load copper bar, and the load copper bar are in the same plane.

3. The IGBT power semiconductor testing device according to claim 2, It is characterized in that The multi-stage test inductor load is divided into grades. For small current test, switch to large inductor to slow down the current building rate for easy control; for large current test, switch to small inductor to increase the current building rate.

4. The IGBT power semiconductor testing device according to claim 3, It is characterized in that It also includes a short-circuit test circuit, the short-circuit test circuit includes a first short-circuit fixed contact pair respectively fixed to the negative copper busbar and the load copper busbar, and A second short-circuit fixed contact pair is respectively fixed to the load copper bar and the positive copper bar, and a first short-circuit telescopic contact block and a second short-circuit telescopic contact block are respectively provided corresponding to the first short-circuit fixed contact pair and the second short-circuit fixed contact pair; two contacts corresponding to the short-circuit fixed contact pair are provided on the telescopic contact block, and the first short-circuit telescopic cylinder and the second short-circuit telescopic cylinder control the movement of the telescopic contact block relative to the short-circuit fixed contact pair, thereby controlling the on and off of the short-circuit fixed contact pair; It also includes two fast recovery diodes, which are current-resistant diodes. Each of the current-resistant diodes is controlled by a diode moving cylinder to contact or separate from the negative copper bus, the load copper bus and the positive copper bus.

5. The IGBT power semiconductor testing device according to claim 4, It is characterized in that The product tray to be tested is controlled by a lifting device to rise and fall relative to the needle bed, so that the probe can contact or leave the corresponding contact point of the product to be tested.

6. The IGBT power semiconductor testing device according to claim 5, It is characterized in that The two groups of conveyor belts are defined as an inner conveyor belt and an outer conveyor belt respectively. The two conveyor belts are driven by independent driving devices respectively. Slide sleeves are arranged on the two middle hinge shafts of the rod body at the bottom of the scissors lift mechanism. A support rod slides in the slide sleeve, and a caster is supported at the lower end of the support rod.

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