Gate mechanism and substrate processing apparatus

Abstract

The present application provides a shutter mechanism and a substrate processing apparatus capable of enlarging an opening and capable of pressing a valve core with a uniform force. The shutter mechanism opens and closes an opening of a cylindrical chamber of a substrate processing apparatus, and has a valve core and a lifting mechanism. A length of the valve core in a direction along an inner periphery of the chamber is more than half of an inner periphery length of the chamber. The lifting mechanism is two or more, is connected to a lower portion of the valve core, and lifts the valve core.

Description

Technical Field

[0001] This disclosure relates to a gate mechanism and a substrate processing apparatus. Background Technology

[0002] Conventionally, a plasma processing apparatus is known that performs desired plasma processing on a wafer, which is a substrate for a semiconductor device. The plasma processing apparatus includes, for example, a chamber housing the wafer, and within the chamber are disposed a stage on which the wafer is placed, functioning as a lower electrode; and an upper electrode opposite to the stage. Furthermore, at least one of the stage and the upper electrode is connected to a high-frequency power source, and the stage and the upper electrode are subjected to high-frequency power within the processing chamber space. In the case of the plasma processing apparatus, the high-frequency power is used to convert the processing gas supplied to the processing chamber space into plasma, generating ions, etc., which are then directed toward the wafer to perform desired plasma processing on the wafer, such as etching.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-126197 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a gate mechanism and a substrate processing apparatus that can enlarge the opening and push the valve core with a uniform force.

[0008] Solution for solving the problem

[0009] The gate mechanism of this disclosure opens and closes the opening of a cylindrical chamber of a substrate processing apparatus. The gate mechanism includes a valve core and a lifting mechanism. The length of the valve core along the inner circumference of the chamber is more than half the inner circumference of the chamber. Two or more lifting mechanisms are connected to the lower part of the valve core to raise and lower the valve core.

[0010] The effects of the invention

[0011] Using this disclosure, the opening can be enlarged, and the valve core can be pushed with a uniform force. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating an example of a substrate processing apparatus according to an embodiment of the present disclosure.

[0013] Figure 2 This is a partially enlarged view showing an example of a cross-section of the gate mechanism of this embodiment.

[0014] Figure 3 This is a diagram showing an example of the appearance of the gate mechanism according to this embodiment.

[0015] Figure 4 This is a diagram showing an example of the appearance of the chamber in this embodiment.

[0016] Figure 5 This is a diagram showing an example of the appearance of the chamber in this embodiment.

[0017] Figure 6 This is a diagram showing an example of the appearance of the chamber in this embodiment. Detailed Implementation

[0018] Hereinafter, embodiments of the disclosed gate mechanism and substrate processing apparatus will be described in detail based on the accompanying drawings. The disclosed technology is not limited to the following embodiments.

[0019] In the case of a plasma processing apparatus, an opening for feeding and unloading semiconductor wafers is provided on the side wall of the chamber, and a gate valve is provided to open and close the opening. The feeding and unloading of semiconductor wafers are performed by opening and closing the gate valve. Inside the chamber, a deposition shield is provided along the inner wall of the chamber to prevent the adhesion of etching byproducts (deposits). The deposition shield also has an opening, which is aligned with the opening of the chamber.

[0020] The gate valve is positioned outside the chamber (on the delivery chamber side), thus creating a space where the opening protrudes towards the delivery chamber side. If plasma generated within the chamber diffuses into the space of the opening, the uniformity of the plasma deteriorates, leading to degradation of the gate valve's sealing components. Therefore, the openings of the chamber and the deposit shielding member are configured to be blocked by the gate. Furthermore, for the gate, for example, a gate actuator is positioned below the opening, and the gate is opened and closed by means of the actuator.

[0021] However, in recent years, there has been a focus on conveying internal components exceeding the outer diameter of the wafer through the chamber opening, leading to efforts to enlarge the opening and increase the size of the gate's valve core. However, increasing the size of the gate's valve core increases the contact area between the valve core and the pushed-down deposit shielding element, making it difficult to ensure sufficient conductivity between them. Therefore, it is desirable to enlarge the opening and to push the valve core with a uniform force.

[0022] [Structure of the substrate processing device]

[0023] Figure 1This figure shows an example of a substrate processing apparatus according to one embodiment of the present disclosure. Hereinafter, the substrate processing apparatus is described as a plasma processing apparatus, but it is not limited to this, and any substrate processing apparatus having a gate member may also be used.

[0024] exist Figure 1 In this embodiment, the plasma processing apparatus 1 is configured as a capacitively coupled parallel-plate plasma etching apparatus. For example, the plasma processing apparatus 1 includes a cylindrical chamber (processing chamber) 10, which is formed of aluminum with anodized (anodized) surface treatment. The chamber 10 is safely grounded. However, it is not limited to this; the plasma processing apparatus 1 is not limited to a capacitively coupled parallel-plate plasma etching apparatus, and can also be any form of plasma processing apparatus such as inductively coupled plasma (ICP), microwave plasma, magnetron plasma, etc.

[0025] A cylindrical base support 12 is disposed at the bottom of the chamber 10, separated by an insulating plate 11 such as ceramic. A conductive base 13 made of, for example, aluminum is disposed on the base support 12. The base 13 has a structure that functions as a lower electrode and is used to hold a substrate, such as a semiconductor wafer W, on which etching is performed.

[0026] An electrostatic chuck (ESC) 14 is disposed on the upper surface of the base 13. The ESC 14 is used to hold the wafer W by electrostatic attraction. The ESC 14 includes: an electrode plate 15 formed of a conductive film; and a pair of insulating layers, such as Y₂O₃, Al₂O₃, AlN, or other dielectrics, that hold the electrode plate 15. The electrode plate 15 is electrically connected to a DC power supply 16 via connection terminals. The ESC 14 holds the wafer W by attracting and holding it using a Coulomb force or a Johnsen-Rahbek force generated by the DC voltage applied by the DC power supply 16.

[0027] Additionally, a plurality of push pins (e.g., three) are disposed on the upper surface of the electrostatic chuck 14 where the wafer W is held. These push pins are lifting pins that protrude freely from the upper surface of the electrostatic chuck 14. These push pins are connected to a motor (not shown) via a ball screw (not shown), and due to the rotational motion of the motor, which is converted into linear motion by the ball screw, these push pins protrude freely from the upper surface of the electrostatic chuck 14. Thus, the push pins penetrate the electrostatic chuck 14 and the base 13, moving up and down relative to the inner space in a protruding / retracting manner. When the electrostatic chuck 14 holds the wafer W during etching, the push pins are housed within the electrostatic chuck 14. When the etched wafer W is removed from the plasma generation space S, the push pins protrude from the electrostatic chuck 14, lifting the wafer W upwards away from the electrostatic chuck 14.

[0028] A side ring 17, formed of, for example, silicon (Si), is disposed on the outer periphery of the upper surface of the base 13 to improve the uniformity of etching. A cover ring 54, which protects the side portion of the side ring 17, is disposed on the outer periphery of the side ring 17. In addition, the sides of the base 13 and the base support 12 are covered by a cylindrical member 18, formed of, for example, quartz (SiO2).

[0029] A refrigerant chamber 19 is disposed inside the base support 12, extending, for example, circumferentially. Refrigerant at a predetermined temperature, such as cooling water, is circulated to the refrigerant chamber 19 from an external cooling device (not shown) via piping 20a and piping 20b. The refrigerant chamber 19 uses the temperature of the refrigerant to control the processing temperature of the wafer W on the base 13.

[0030] In addition, a heat transfer gas, such as helium (He) gas, is supplied from a heat transfer gas supply mechanism (not shown) to the space between the upper surface of the electrostatic chuck 14 and the back surface of the wafer W via a gas supply line 21, thereby efficiently and uniformly controlling the heat flow between the wafer W and the base 13.

[0031] An upper electrode 22 is arranged above the base 13, parallel to and opposite to the base 13. The space formed between the base 13 and the upper electrode 22 functions as a plasma generation space S (processing chamber space). The upper electrode 22 includes: an outer upper electrode 23, which is annular or circular in shape, arranged opposite the base 13 with a predetermined gap; and an inner upper electrode 24, which is circular in shape, arranged radially inside the outer upper electrode 23 in an insulated manner. Furthermore, regarding plasma generation, the outer upper electrode 23 is dominant, while the inner upper electrode 24 is auxiliary.

[0032] An annular gap (void) of, for example, 0.25 mm to 2.0 mm is formed between the outer upper electrode 23 and the inner upper electrode 24, and a dielectric 25, for example, made of quartz, is disposed in the gap. Alternatively, a ceramic body may be disposed in the gap instead of the dielectric 25 made of quartz. The outer upper electrode 23 and the inner upper electrode 24 sandwich the dielectric 25, thereby forming a capacitor. The capacitance C1 of the capacitor can be selected or adjusted to a desired value according to the size of the gap and the dielectric constant of the dielectric 25. In addition, an annular insulating shielding member 26 is hermetically disposed between the outer upper electrode 23 and the sidewall of the chamber 10, and the insulating shielding member 26 is formed, for example, of alumina (Al2O3) or yttrium oxide (Y2O3).

[0033] The outer upper electrode 23 is preferably formed of a low-resistance conductor or semiconductor, such as silicon, with low Joule heating. The upper high-frequency power supply 31 is electrically connected to the outer upper electrode 23 via an upper matching device 27, an upper power supply rod 28, a connector 29, and a power supply cylinder 30. The upper matching device 27 is used to match the internal (or output) impedance of the upper high-frequency power supply 31 with the load impedance, functioning in a way that makes the output impedance and load impedance of the upper high-frequency power supply 31 appear to be consistent when plasma is generated within the chamber 10. Additionally, the output terminal of the upper matching device 27 is connected to the upper end of the upper power supply rod 28.

[0034] The power supply cylinder 30 is formed of a generally cylindrical or conical conductive plate, such as an aluminum or copper plate. Its lower end is continuously connected circumferentially to the outer upper electrode 23, and its upper end is electrically connected to the lower end of the upper power supply rod 28 via a connector 29. On the outside of the power supply cylinder 30, the sidewall of the chamber 10 extends above the height of the upper electrode 22, forming a cylindrical grounding conductor 10a. The upper end of the cylindrical grounding conductor 10a is electrically insulated from the upper power supply rod 28 by means of a cylindrical insulating member 69. In this structure, in the load circuit observed from the connector 29, the power supply cylinder 30, the outer upper electrode 23, and the grounding conductor 10a form a coaxial line with the power supply cylinder 30 and the outer upper electrode 23 as waveguides.

[0035] The inner upper electrode 24 has an upper electrode plate 32 and an electrode support 33. The upper electrode plate 32 is formed of a semiconductor material such as silicon or silicon carbide (SiC) and has a plurality of electrode plate vent holes (first vent holes) not shown. The electrode support 33 is a conductive material that supports the upper electrode plate 32 in a manner that allows the upper electrode plate 32 to be attached and detached, and is formed of, for example, aluminum with an anodized surface. The upper electrode plate 32 is fastened to the electrode support 33 by means of bolts (not shown). The heads of the bolts are protected by an annular protective ring 53 disposed at the lower part of the upper electrode plate 32.

[0036] On the upper electrode plate 32, vent holes for each electrode plate penetrate the upper electrode plate 32. A buffer chamber for introducing the processing gas (described later) is formed inside the electrode support 33. The buffer chamber includes two buffer chambers separated by an annular partition member 43: a central buffer chamber 35 and a peripheral buffer chamber 36. The lower part of the buffer chamber is open. The annular partition member 43 is made of, for example, an O-ring seal. A cooling plate (hereinafter referred to as "C / P") 34 (intermediate member) is disposed below the electrode support 33 to block the lower part of the buffer chamber. The C / P 34 is formed of aluminum with an anodized surface and has a plurality of C / P vent holes (second vent holes), not shown. Each C / P vent hole penetrates the C / P 34.

[0037] Additionally, a spacer 37 made of semiconductor materials such as silicon or silicon carbide is sandwiched between the upper electrode plate 32 and C / P 34. The spacer 37 is a circular plate-shaped member having: a plurality of annular grooves on the upper surface, which are formed concentrically with the circular plate on the surface of the spacer 37 opposite to C / P 34 (hereinafter referred to as the "upper surface"); and a plurality of spacer vent holes (third vent holes), which penetrate the spacer 37 and open at the bottom of each annular groove on the upper surface.

[0038] Regarding the inner upper electrode 24, the processing gas introduced into the buffer chamber from the processing gas supply source 38 (described later) is supplied to the plasma generation space S via the C / P vent of C / P 34, the spacer gas flow path of spacer 37, and the electrode plate vent of upper electrode plate 32. Here, the central buffer chamber 35, together with the plurality of C / P vents, spacer gas flow paths, and electrode plate vents located below it, constitutes a central nozzle (processing gas supply path). Furthermore, the peripheral buffer chamber 36, together with the plurality of C / P vents, spacer gas flow paths, and electrode plate vents located below it, constitutes a peripheral nozzle (processing gas supply path).

[0039] In addition, such as Figure 1As shown, a processing gas supply source 38 is disposed outside the chamber 10. The processing gas supply source 38 supplies processing gas to the central buffer chamber 35 and the peripheral buffer chamber 36 at a desired flow rate ratio. Specifically, the gas supply pipe 39 from the processing gas supply source 38 branches into two branch pipes 39a and 39b midway. Branch pipe 39a is connected to the central buffer chamber 35, and branch pipe 39b is connected to the peripheral buffer chamber 36. Branch pipe 39a has a flow control valve 40a (flow control device), and branch pipe 39b has a flow control valve 40b (flow control device). The flow path from the processing gas supply source 38 to the central buffer chamber 35 and the peripheral buffer chamber 36 is set to be equal. Therefore, the flow rate ratio of the processing gas supplied to the central buffer chamber 35 and the peripheral buffer chamber 36 can be arbitrarily adjusted by adjusting the flow control valves 40a and 40b. In addition, a mass flow controller (MFC) 41 and an on / off valve 42 are disposed on the gas supply pipe 39.

[0040] Based on the above structure, in the case of plasma processing apparatus 1, the flow rate ratio of the processing gas introduced into the central buffer chamber 35 and the peripheral buffer chamber 36 is adjusted, thereby arbitrarily adjusting the ratio (FC / FE) of the flow rate FC of the gas ejected from the central nozzle and the flow rate FE of the gas ejected from the peripheral nozzle. Furthermore, the flow rate per unit area of ​​the processing gas ejected from the central nozzle and the flow rate per unit area of ​​the processing gas ejected from the peripheral nozzle can also be adjusted separately. In addition, by configuring two processing gas supply sources corresponding to branch pipes 39a and 39b respectively, the gas type or gas mixing ratio of the processing gas ejected from the central nozzle and the processing gas ejected from the peripheral nozzle can be set individually or separately. However, this is not a limitation; plasma processing apparatus 1 may also be an apparatus where the ratio of the flow rate FC of the gas ejected from the central nozzle and the flow rate FE of the gas ejected from the peripheral nozzle cannot be adjusted.

[0041] Additionally, the upper high-frequency power supply 31 is electrically connected to the electrode support 33 of the inner upper electrode 24 via the upper matching unit 27, the upper power supply rod 28, the connector 29, and the upper power supply cylinder 44. A variable capacitor 45, capable of adjusting its capacitance, is disposed midway through the upper power supply cylinder 44. Alternatively, refrigerant chambers or cooling jackets (not shown) may also be provided on the outer upper electrode 23 and the inner upper electrode 24, and the temperature of the electrodes may be controlled using refrigerant supplied from an external cooling device (not shown).

[0042] An exhaust port 46 is provided at the bottom of chamber 10. An automatic pressure control valve (hereinafter referred to as "APC valve") 48, which is a variable butterfly valve, and a turbomolecular pump (hereinafter referred to as "TMP") 49 are connected to this exhaust port 46 via an exhaust manifold 47. The APC valve 48 and TMP 49 work together to depressurize the plasma generation space S within chamber 10 to the desired vacuum level. Furthermore, an annular baffle 50 with multiple vent holes is arranged between the exhaust port 46 and the plasma generation space S, surrounding the base 13, to prevent plasma leakage from the plasma generation space S to the exhaust port 46.

[0043] Additionally, an opening 51 for feeding and discharging the wafer W is provided on the outer side wall of the chamber 10, and a gate valve 52 is provided to open and close the opening 51. Inside the chamber 10, a first deposition shield 71 and a second deposition shield 72 are provided along the inner wall of the chamber 10 in a removable manner. The first deposition shield 71 is the upper component of the deposition shield and is positioned above the opening 51 of the chamber 10. The second deposition shield 72 is the lower component of the deposition shield and is located at the lower part of the baffle 50. The lower part of the first deposition shield 71 contacts the upper part of the valve core 81 of the gate mechanism 80 (described later), thereby closing the opening 51. The first deposition shield 71 and the second deposition shield 72 can be constructed by, for example, coating aluminum with a ceramic such as Y2O3. In addition, the lower part of the first deposit shield 71 is covered with a conductive material, such as stainless steel or nickel alloy, so that it can be connected to the valve core 81 in contact with it.

[0044] The wafer W is fed in and out by opening and closing the gate valve 52. The gate valve 52 is located on the outside of the chamber 10 (the delivery chamber side), thus forming a space with an opening 51 protruding towards the delivery chamber side. Therefore, plasma generated within the chamber 10 diffuses into this space, causing deterioration of plasma uniformity and degradation of the sealing components of the gate valve 52. Therefore, the valve core 81 blocks the space between the first deposit shield 71 and the second deposit shield 72, thereby blocking the opening 51 of the chamber 10 and the plasma generation space S. Furthermore, a lifting mechanism 82 that drives the valve core 81 is located, for example, below the second deposit shield 72. The valve core 81 is driven vertically by the lifting mechanism 82, causing the opening 51 between the first and second deposit shields 71 ​​to open and close. The valve core 81 and the lifting mechanism 82 can also be collectively referred to as the gate mechanism 80.

[0045] Furthermore, in the plasma processing apparatus 1, the base 13, which serves as the lower electrode, is electrically connected to the lower high-frequency power supply (first high-frequency power supply) 59 via a lower matching device 58. The lower matching device 58 is used to match the internal (or output) impedance of the lower high-frequency power supply 59 with the load impedance, and functions in a way that makes the internal impedance of the lower high-frequency power supply 59 appear to match the load impedance when plasma is generated in the plasma generation space S within the chamber 10. Additionally, another second lower high-frequency power supply (second high-frequency power supply) can also be connected to the lower electrode.

[0046] Furthermore, in the plasma processing apparatus 1, the inner upper electrode 24 is electrically connected to a low-pass filter (LPF) 61, which grounds the high-frequency power from the upper high-frequency power supply 31, but rather the high-frequency power from the lower high-frequency power supply 59. Preferably, the LPF 61 is composed of an LR filter or an LC filter. Since a single wire can apply sufficiently large reactance to the high-frequency power from the upper high-frequency power supply 31, it is possible to use only one wire to electrically connect to the inner upper electrode 24 instead of an LR filter or an LC filter. On the other hand, the base 13 is electrically connected to a high-pass filter (HPF) 62 for grounding the high-frequency power from the upper high-frequency power supply 31.

[0047] Next, in the case of etching in the plasma processing apparatus 1, the gate valve 52 and valve core 81 are first opened, and the wafer W to be processed is fed into the chamber 10 and placed on the base 13. Then, a processing gas, such as a mixture of C4F8 gas and argon (Ar) gas, is introduced into the central buffer chamber 35 and the peripheral buffer chamber 36 at a predetermined flow rate and flow ratio by means of the processing gas supply source 38. In addition, the pressure of the plasma generation space S in the chamber 10 is set to a value suitable for etching, such as any value in the range of a few mTorr to 1 Torr, by means of the APC valve 48 and TMP 49.

[0048] Furthermore, high-frequency power for plasma generation is applied to the upper electrode 22 (outer upper electrode 23, inner upper electrode 24) at a predetermined power using the upper high-frequency power supply 31, and high-frequency power for biasing is applied to the lower electrode of the base 13 at a predetermined power using the lower high-frequency power supply 59. Additionally, a DC voltage is applied to the electrode plate 15 of the electrostatic chuck 14 using the DC power supply 16, causing the wafer W to be electrostatically attached to the base 13.

[0049] Therefore, plasma is generated in the plasma generation space S by using the processing gas ejected from the nozzle, and the free radicals and ions generated at this time are used to perform physical or chemical etching on the surface of the wafer W to be processed.

[0050] In the plasma processing apparatus 1, a high frequency (a frequency range in which ions cannot move) is applied to the upper electrode 22, thereby increasing the plasma density to an ideal dissociation state. Furthermore, high-density plasma can also be formed under relatively low pressure conditions.

[0051] On the other hand, in the upper electrode 22, the outer upper electrode 23 serves as the main high-frequency electrode for plasma generation, while the inner upper electrode 24 is secondary. The ratio of the electric field strength acting on electrons directly below the upper electrode 22 can be adjusted using the upper high-frequency power supply 31 and the lower high-frequency power supply 59. Therefore, the spatial distribution of ion density in the radial direction can be controlled, allowing for arbitrary and precise control of the spatial characteristics of reactive ion etching.

[0052] [Detailed Description of Gate Mechanism 80]

[0053] Figure 2 This is a partially enlarged view showing an example of a cross-section of the gate mechanism of this embodiment. Figure 3 This is a diagram showing an example of the appearance of the gate mechanism according to this embodiment. Figure 2 and Figure 3 As shown, the gate mechanism 80 includes: a valve core 81, the length of which along the inner circumference of the chamber 10 is more than half the inner circumference of the chamber 10; and two or more lifting mechanisms 82, which cause the valve core 81 to rise and fall. For example Figure 3 As shown, the valve core 81 can be an annular valve core along the inner circumference of the chamber 10. The valve core 81 has a conductive member 83 and a conductive member 84. When the opening 51 is closed, the conductive member 83 abuts against the first deposit shield 71, and the conductive member 84 abuts against the second deposit shield 72.

[0054] The valve core 81 is formed from materials such as aluminum, and its cross-section is approximately L-shaped. The surface of the valve core 81 is coated with materials such as Y2O3. A conductive member 83 is disposed at the upper end of the valve core 81. In addition, a conductive member 84 is disposed at the stepped portion of the valve core 81. The conductive members 83 and 84, also called conductive strips or spiral tubes, are conductive elastic members. In addition, the conductive members 83 and 84 can be made of materials such as stainless steel or nickel alloy. The conductive members 83 and 84 are formed, for example, by rolling a strip-shaped member into a spiral shape. In addition, the conductive members 83 and 84 can also be, for example, a helical spring with a U-shaped sleeve. In short, the conductive members 83 and 84 are flattened when the valve core 81 comes into contact with the first deposit shield 71 and the second deposit shield 72.

[0055] The lifting mechanism 82 has a rod, which is fixed and connected to the lower part of the valve core 81 by means of threaded components or the like. The lifting mechanism 82 moves the rod up and down by means of, for example, a cylinder or a motor. When a cylinder is used in the lifting mechanism 82, it is controlled in such a way that the flow rate of dry air supplied to each lifting mechanism 82 is equal. Figure 3 In this example, the three lifting mechanisms 82 are arranged at equal intervals of 120 degrees. Each lifting mechanism 82 can lift and lower the valve core 81 without bending or tilting by lifting and lowering at the same speed at the same time. In addition, for example, if the valve core 81 is semi-circular along the inner circumference of the chamber 10, lifting and lowering can be performed in the same way by providing lifting mechanisms 82 at both ends.

[0056] In the gate mechanism 80, the valve core 81 is pushed upward by the lifting mechanism 82 to close the opening 51, and pulled downward by the lifting mechanism 82 to open the opening 51. With the valve core 81 in the closed opening 51 state, the upper conductive member 83 of the valve core 81 abuts against the first deposit shield 71, and the lower conductive member 84 of the valve core 81 abuts against the second deposit shield 72. Thus, the valve core 81 is electrically connected to the first and second deposit shields 71 ​​and 72 via the conductive members 83 and 84. The first and second deposit shields 71 ​​and 72 are in contact with the grounded chamber 10. Therefore, the valve core 81 is grounded via the first and second deposit shields 71 ​​and 72 when the opening 51 is closed.

[0057] Furthermore, in the gate mechanism 80, the valve core 81 corresponds to a portion of a conventional sediment shielding member, thus representing a portion of a conventional sediment shielding member divided into multiple parts. Conventional sediment shielding members are heavier, making maintenance more difficult. However, in this embodiment, the division into a first sediment shielding member 71, a second sediment shielding member 72, and the valve core 81 makes maintenance easier.

[0058] [Appearance of Chamber 10]

[0059] Figures 4 to 6 This is a diagram showing an example of the appearance of the chamber in this embodiment. Wherein, in Figures 4 to 6 For ease of explanation, the diagram shows the state with the base 13, upper electrode 22, power supply cylinder 30, and valve core 81 omitted. Figures 4 to 6 As shown, three lifting mechanisms 82 are provided at equal intervals, for example, in chamber 10 at 120-degree intervals. The opening 51 has a width that can transport not only the wafer W, but also, for example, the edge ring 17 and the cover ring 54. A gate valve 52 can be connected to the outer side of the opening 51. The annular valve core 81 moves upward, thereby closing the opening 51.

[0060] According to this embodiment, the gate mechanism 80 opens and closes the opening 51 of the cylindrical chamber 10 of the substrate processing apparatus (plasma processing apparatus 1). The gate mechanism 80 includes a valve core 81 and a lifting mechanism 82. The length of the valve core 81 along the inner circumference of the chamber 10 is more than half the inner circumference of the chamber 10. Two or more lifting mechanisms 82 are connected to the lower part of the valve core 81, causing the valve core 81 to rise and fall. As a result, the opening 51 can be enlarged, and the valve core 81 can be pushed against the first deposit shielding member 71 with a uniform force. Furthermore, bias in the conduction between the valve core 81 and the first deposit shielding member 71 can be eliminated. Additionally, the load on each lifting mechanism 82 can be reduced. That is, the lifting mechanism 82 can be miniaturized.

[0061] Furthermore, according to this embodiment, the valve core 81 is annular. As a result, the valve core 81 will not tilt, and the valve core 81 can be pushed against the first deposit shielding member 71 with a uniform force.

[0062] Furthermore, according to this embodiment, there are three or more lifting mechanisms 82. As a result, the valve core 81 will not tilt, and the valve core 81 can be pushed against the first deposit shielding member 71 with a uniform force.

[0063] Furthermore, according to this embodiment, the lifting mechanisms 82 are arranged at equal intervals. As a result, the valve core 81 will not tilt, and the valve core 81 can be pushed against the first deposit shielding member 71 with a uniform force.

[0064] Furthermore, according to this embodiment, the valve core 81 has a conductive member 83 on the conductive surface that is to contact the upper member (first deposit shielding member 71) provided along the inner wall of the upper part of the chamber 10. As a result, the bias in the conduction between the valve core 81 and the first deposit shielding member 71 can be eliminated.

[0065] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not intended to limit the invention. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the claims and their spirit.

[0066] Furthermore, in the above embodiments, plasma processing apparatus 1 is exemplified as a substrate processing apparatus, but it is not limited to this. For example, it can also be applied to substrate processing apparatuses that do not use plasma but instead perform processing with alternating multiple processing gases, such as atomic layer deposition (ALD).

Claims

1. A substrate processing apparatus comprising: The chamber is cylindrical and has an opening for feeding in the substrate to be processed, the opening extending in a circumferential direction along a portion of the chamber. First sediment shielding element and second sediment shielding element; A base, which is disposed within the cavity; The upper electrode is arranged above the base in a manner parallel to and opposite to the base; A side ring, located on the outer periphery of the upper surface of the base disposed within the cavity; A cover ring, located on the outer periphery of the side ring; as well as A gate mechanism that opens and closes the opening. The gate mechanism has the following features: The valve core is annular, and the length of the valve core along the inner circumference of the chamber is more than half of the inner circumference of the chamber. as well as The lifting mechanism, consisting of two or more components, is connected to the lower part of the valve core to cause the valve core to rise and fall. The valve core has a first conductive member disposed at its upper end and a second conductive member disposed at its stepped portion. In the closed position, the first conductive member abuts against the first deposit blocking member, and the second conductive member abuts against the second deposit blocking member. In this configuration, two or more lifting mechanisms are arranged at equal intervals along the annular valve core. Specifically, two or more lifting mechanisms are configured to lift and lower the valve core simultaneously and at the same speed, and are configured to cause the valve core to contact the first deposit shield and the second deposit shield. The first deposit shielding element is in contact with the inner periphery of the chamber. The first deposit shielding member is also connected to an insulating shielding member, which is annular and hermetically disposed between the outer surface of the upper electrode and the side wall of the chamber. The opening is sized to allow the cap ring to be conveyed.

2. The substrate processing apparatus according to claim 1, wherein, The lifting mechanism consists of three or more components.

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