Evaporation mask, evaporation mask assembly, evaporation mask device and display device

Abstract

The present invention provides a vapor deposition mask, comprising: a first surface side, a second surface side and a through hole, characterized in that the thickness T from the first surface side to the second surface side satisfies the relationship: 5um≤T≤40um; the first surface side at least comprises a plurality of first recesses, the first recesses surround the through hole, the first recesses comprise a first opening and a first etching surface; the second surface side at least comprises a plurality of second recesses, the second recesses are recessed toward the first surface side, and the second recesses and the first recesses penetrate each other to form a through hole; a longitudinal section perpendicular to the first surface side and the second surface side is defined, the longitudinal section width of the first opening is defined as D, and the longitudinal section width of the through hole is defined as F, then the relationship: 1um≤D-F≤4um is satisfied. This prevents the first etching from directly etching through the metal coil during the vapor deposition mask manufacturing process.

Description

[Technical field]

[0001] The present invention relates to the technical field of optical masks, and in particular to an evaporation mask, an evaporation mask assembly, an evaporation mask device and a display device. [Background technology]

[0002] In recent years, the displays used in mobile terminals such as smartphones and tablets have been required to be very fine (number of pixels: 400ppi or more). In the future, ultra high definition (UHD) will be required for mobile terminals, and it is expected that OLED panels with higher resolution (number of pixels: 800ppi) will be required. In the manufacture of OLED panels, a vapor deposition mask is required. In order to cope with the high precision of OLED panels, the vapor deposition mask also needs to be highly refined. Using a vapor deposition mask with a smaller thickness is conducive to improving the refinement.

[0003] The evaporation mask is usually formed by etching the metal coil twice on its upper and lower surfaces, and the size of the through hole is determined by the smallest size formed in the two etchings. Figure 1 In the existing etching method, when the thickness of the metal coil is greater than 40um, the etching amount of the first etching is large, and the hanging size t of the first concave portion formed is larger than the opening size s. Figure 2 , it is only necessary to control the etching amount of the second etching so that the opening size at X is greater than or equal to the opening size s of the first etching, so as to ensure that the opening size s of the first etching is the through hole size u. The existing method is easy to realize the parameter control of the first etching and the second etching. Figure 3 When the thickness of the metal coil is 40um or less, the existing method is easy to etch through the metal coil, resulting in process failure. At the same time, the existing etching method, when the thickness of the metal coil is greater than 40um, Figure 2 The cross-sectional height v from the upper surface Y of the metal coil to the through hole X in the embodiment can be controlled at 6um, but when the thickness of the metal coil is less than or equal to 40um, the cross-sectional height v needs to be controlled below 4um, and the second etching of the existing etching method is difficult to achieve this accuracy. Therefore, it is necessary to provide a method for manufacturing a vapor deposition mask that avoids the first etching directly etching through the metal coil when the thickness T of the metal coil is not greater than 40um. [Summary of the invention]

[0004] The object of the present invention is to provide a vapor deposition mask, component, device and organic display device to solve the problem that the metal coil is easily etched through during the first etching process when the thickness of the metal coil is not more than 40um during the vapor deposition mask manufacturing process.

[0005] The technical solution of the present invention is as follows: a vapor deposition mask, which is used in vapor deposition of a vapor deposition material onto a vapor deposition substrate, and the vapor deposition mask comprises:

[0006] A first surface side, which constitutes a side of the evaporation mask facing the evaporation substrate;

[0007] A second surface side, which constitutes a side of the evaporation mask opposite to the first surface side; and

[0008] a through hole penetrating through the first surface side and the second surface side,

[0009] Characterized in that the thickness T from the first surface side to the second surface side satisfies the relationship: 5um≤T≤40um;

[0010] The first surface side includes at least a plurality of first recesses, the first recesses surround the through hole, the first recesses include a first opening and a first etched surface, the first etched surface is a surface formed by being recessed from the first opening toward the second surface side; the second surface side includes at least a plurality of second recesses, the second recesses are recessed toward the first surface side, the second recesses and the first recesses penetrate each other to form a through hole, and the first etched surface connects the first opening and the through hole; a longitudinal section perpendicular to the first surface side and the second surface side is defined, the longitudinal section width of the first opening is defined as D, and the longitudinal section width of the through hole is defined as F, then the relationship is satisfied: 1um≤DF≤4um.

[0011] More preferably, the first surface further includes a first supporting portion, and the first supporting portion surrounds the first recess.

[0012] More preferably, the first supporting portion is a plane, and the thickness T from the first surface side to the second surface side is the thickness from the first supporting portion to the second surface side.

[0013] More preferably, the second surface side further includes a second supporting portion, the second supporting portion is a plane, and the thickness T from the first surface side to the second surface side is the thickness from the first supporting portion to the second supporting portion.

[0014] More preferably, the second supporting portion is formed between a plurality of the second recessed portions, and a projection of the second supporting portion on the first surface side is located inside the first supporting portion.

[0015] More preferably, the second recess includes a second opening and a second etched surface, the second opening is connected to the second support portion, the second etched surface bends and extends from the second opening toward the through hole, and the second etched surface connects the second opening and the through hole.

[0016] A vapor deposition mask assembly comprises any of the above described vapor deposition masks.

[0017] A vapor deposition mask device comprises the vapor deposition mask assembly as described above.

[0018] An organic display device is obtained by performing evaporation using the evaporation mask device as described above.

[0019] The beneficial effect of the present invention is that by limiting the longitudinal section width of the first opening of the evaporation mask to D and the longitudinal section width of the through hole to F, the relationship is satisfied: 1um≤DF≤4um, so that during the manufacturing process of the evaporation mask, when the thickness T of the metal coil is not greater than 40um, the through hole can be formed by two etchings, thereby avoiding the first etching directly corroding the metal coil.

Brief Description of the Drawings

[0020] Figure 1 It is a schematic structural diagram of the evaporation mask device of the present invention;

[0021] Figure 2 It is a schematic structural diagram of the evaporation mask assembly of the present invention;

[0022] Figure 3 This is a schematic structural diagram of the evaporation mask of the present invention, in which the first surface of the mask faces upward;

[0023] Figure 4 This is a schematic structural diagram of the vapor deposition mask of the present invention, in which the second surface of the mask faces upward;

[0024] Figure 5 for Figure 3 Schematic diagram of the cross section at AA;

[0025] Figure 6 for Figure 3 Schematic diagram of the cross section at BB;

[0026] Figure 7 It is a schematic diagram of the process of manufacturing a vapor deposition mask of the present invention;

[0027] Figure 8 is a schematic structural diagram of a first bonding device of the present invention;

[0028] Fig. 9 It is a schematic structural diagram of the exposure device of the present invention;

[0029] Fig.10 It is a structural schematic diagram of the developing device of the present invention;

[0030] Fig.11 It is a schematic diagram of the conveying sequence of the metal coil in the manufacturing device of the present invention;

[0031] Fig.12is a cross-sectional view of the evaporation mask structure corresponding to step S20 of the present invention;

[0032] Fig.13 is a cross-sectional view of the evaporation mask structure corresponding to step S40 of the present invention;

[0033] Fig.14 is a cross-sectional view of the evaporation mask structure corresponding to step S50 of the present invention;

[0034] Fig.15 is a cross-sectional view of the evaporation mask structure corresponding to step S60 of the present invention;

[0035] Fig.16 It is a cross-sectional view of the evaporation mask structure corresponding to step S70 of the present invention. [Specific implementation method]

[0036] The present invention will be further described below in conjunction with the accompanying drawings and implementation modes.

[0037] (Evaporation mask device 4000)

[0038] This embodiment provides a vapor deposition mask device 4000, see Figure 1 The evaporation mask device 4000 includes: an evaporation mask component 1000, an evaporation component 2000 and an evaporation substrate 3000. The evaporation component 2000 is heated to generate vaporized or sublimated evaporation material 2300 and evaporates it on the evaporation substrate 3000 through the evaporation mask component 1000.

[0039] Preferably, see Figure 2 The evaporation mask assembly 1000 includes an evaporation mask 100 and a frame 200, a through area 210 is provided in the middle of the frame 200, the evaporation substrate 3000 is arranged in the through area 210, the evaporation mask 100 is fixed to the frame 200 and is tightly fitted with the evaporation substrate 3000, and the evaporation material 2300 is attached to the evaporation substrate 3000 fitted with the evaporation mask 100 through the evaporation mask 100.

[0040] More preferably, the vapor deposition substrate 3000 is made of glass material. In this embodiment, the vapor deposition substrate 3000 is specifically an electrode glass provided with electrodes.

[0041] Preferably, the evaporation assembly 2000 includes a heater 2100, a crucible 2200 and an evaporation material 2300, the evaporation material 2300 is placed in the crucible 2200, and the heater 2100 is used to heat the crucible 2200. Specifically, the evaporation material 2300 is an organic light-emitting material. The heater 2100 heats the crucible 2200 to make the evaporation material 2300 vaporize or sublimate and rise, and is tightly attached to the side of the evaporation substrate 3000 facing the evaporation assembly 2000 through the evaporation mask 100. In this embodiment, the evaporation substrate 3000 is an electrode glass, and the electrode of the electrode glass adsorbs the vaporized evaporation material 2300 to improve the evaporation effect.

[0042] (Evaporation mask assembly 1000)

[0043] This embodiment provides a vapor deposition mask assembly 1000, which is used to form a part of the vapor deposition mask device 4000. Figure 2 The evaporation mask assembly 1000 includes a frame 200 and an evaporation mask 100. The number of the evaporation masks 100 is several. In this embodiment, the number of the evaporation masks 100 is 7. The 7 strip-shaped evaporation masks 100 are fixed on the frame 200 at intervals.

[0044] Preferably, the frame 200 is a rectangular structure with a through-area 210 formed inside, the evaporation mask 100 is welded to the frame 200 through a stretched net, and the effective area 110 of the evaporation mask 100 is placed in the through-area 210 of the frame 200, and the frame 200 supports the evaporation mask 100. In this embodiment, the frame 200 is made of a metal material that can be fixed by magnetic adsorption.

[0045] More preferably, the vapor deposition mask 100 includes an effective area 110, a surrounding area 120 and a fixed area 130. A plurality of effective areas 110 are arranged on a strip-shaped vapor deposition mask 100. In this embodiment, five effective areas 110 are arranged at intervals on the vapor deposition mask 100. The surrounding area 120 surrounds the effective area 110 and mainly plays a role in supporting the effective area 110. The fixed area 130 is connected to the surrounding area 120, and the fixed area 130 is fixed to the frame 200.

[0046] Preferably, see Figure 3 and Figure 4The effective area 110 is provided with a plurality of through holes 30, through which the evaporation material 2300 is tightly attached to the evaporation substrate 3000. The through holes 30 can be designed into a plurality of arbitrary sizes and shapes according to actual needs and can be organically arranged and combined to obtain the required pattern. The process of the evaporation material 2300 adhering to the evaporation substrate 3000 can be understood as the process of transferring the actually required pattern to the evaporation substrate 3000 through the effective area 110 of the evaporation mask 100.

[0047] (Evaporation mask 100)

[0048] This embodiment provides a vapor deposition mask 100, which is used to form a part of the vapor deposition mask assembly 1000. Figure 2 The evaporation mask 100 includes an active area 110, a peripheral area 120 and a fixed area 130. A strip-shaped evaporation mask 100 is provided with a plurality of active areas 110, the peripheral area 120 surrounds the active area 110, and the fixed area 130 is connected to the peripheral area 120. The evaporation mask 100 is formed by etching a metal coil 40. In this embodiment, the metal coil 40 is specifically a nickel-iron alloy, also known as invar alloy, which is 36% nickel with a thermal expansion coefficient of about 1 ppm / °C.

[0049] Preferably, see Figure 3 and Figure 4 ,, the effective area 110 includes a first surface side 10, a second surface side 20 and a through hole 30, the first surface side 10 constitutes a side of the evaporation mask 100 facing the evaporation substrate 3000, and the second surface side 20 constitutes a side of the evaporation mask 100 opposite to the first surface side 10. In this embodiment, the second surface side 20 faces the evaporation component 2000, and the through hole 30 penetrates the first surface side 10 and the second surface side 20 along the thickness direction of the evaporation mask 100.

[0050] Specifically, there are multiple through holes 30, and the multiple through holes 30 are arranged at a certain interval in the effective area 110 according to actual needs. The evaporation material 2300 is evaporated on the evaporation substrate 3000 to obtain the required pattern according to the size and shape of the through holes 30 and the organic arrangement and combination of the through holes 30.

[0051] Specifically, see Figure 3 The first surface side 10 includes a first recess 11 and a first support portion 12, the first recess 11 surrounds the through hole 30, the first support portion 12 is a plane, the first support portion 12 surrounds the first recess 11, and the first support portion 12 is used to fit with the evaporation substrate 3000.

[0052] Specifically, see Figure 4 The second surface side 20 includes a second recess 21 and a second support portion 22, the second recess 21 surrounds the through hole 30, and the number of the second recess 21 is multiple. The second support portion 22 is a plane, and the second support portion 22 is formed between the multiple second recesses 21, and the projection of the second support portion 22 on the first surface side 10 is located inside the first support portion 12. In this embodiment, four second recesses 21 surround one second support portion 22, and the second support portion 22 extends in a direction away from the first surface side 10. The thickness from the second support portion 22 to the first support portion 12 on the first surface side 10 is equal to the thickness of the metal coil 40 used for etching to form the evaporation mask 100 plate.

[0053] Specifically, the evaporation mask 100 is formed by etching the metal coil 40 . In the concept of the present invention, the thickness T of the metal coil 40 satisfies the relationship: 5um≤T≤40um.

[0054] Specifically, see Figure 5 and Figure 6 The first concave portion 11 includes a first opening 111 and a first etched surface 112, wherein the first opening 111 is located on the first surface side 10, and the first etched surface 112 is an arc surface formed by being recessed from the first opening 111 to the second surface side 20. Moreover, the first opening 111 is connected to the first supporting portion 12, and the first etched surface 112 is bent and extended from the first opening 111 to the direction of the through hole 30, and the first etched surface 112 connects the first opening 111 and the through hole 30.

[0055] Specifically, see Figure 5 and Figure 6 The second recess 21 includes a second opening 211 and a second etched surface 212, the second opening 211 is connected to the second support portion 22, the second etched surface 212 bends and extends from the second opening 211 toward the through hole 30, and the second etched surface 212 connects the second opening 211 and the through hole 30.

[0056] More preferably, a longitudinal section perpendicular to the first surface side 10 and the second surface side 20 is defined, and the longitudinal section width of the first opening 111 is D, and the longitudinal section width of the through hole 30 is F, satisfying the relationship: 1um≤DF≤4um. When the above relationship is satisfied, during the etching process of the evaporation mask 100, the through hole 30 can be formed through two etchings when the thickness T of the metal coil 40 is not greater than 40um, thereby avoiding the first etching directly etching through the metal coil 40.

[0057] (Method for Manufacturing Vapor Deposition Mask 100)

[0058] This embodiment provides a method for manufacturing an evaporation mask 100, which is used to manufacture the evaporation mask 100. Figure 7 to Figure 16 , the manufacturing method comprises:

[0059] Step S10: providing a metal coil 40 .

[0060] Specifically, the metal coil 40 includes an upper surface 41 and a lower surface 42, the upper surface 41 is opposite to the lower surface 42, the thickness T of the metal coil 40 is the thickness from the upper surface 41 to the lower surface 42, and satisfies the relationship: 5um≤T≤40um;

[0061] Preferably, the metal coil 40 is used for etching to form the evaporation mask 100. In this embodiment, the metal coil 40 is specifically a nickel-iron alloy, which is a 36% nickel-iron alloy with a thermal expansion coefficient of about 1 ppm / °C. This method can suppress the dimensional change caused by the evaporation heat temperature.

[0062] Preferably, the upper surface 41 and the lower surface 42 of the metal coil 40 need to be cleaned and inspected by conventional pickling before etching. Specifically, the upper surface 41 and the lower surface 42 of the metal coil 40 are sprayed with acid or alkali, and the metal coil 40 can be released by the reel 61 and slowly passed through the cleaning device, and then reeled after cleaning for the subsequent process. Foreign matter on the surface of the metal coil 40 can be removed, metal dopants on the surface of the metal coil 40 can be removed, and hole shape defects can be prevented.

[0063] Step S20 : ​​vacuum laminating the dry film photoresist 50 on the upper surface 41 and the lower surface 42 of the metal coil 40 .

[0064] Specifically, the dry film photoresist 50 includes a first dry film photoresist 51 and a second dry film photoresist 52 . The first dry film photoresist 51 is attached to the upper surface 41 of the metal coil 40 , and the second dry film photoresist 52 is attached to the lower surface 42 of the metal coil 40 .

[0065] Specifically, the dry film photoresist 50 is bonded to the upper surface 41 and the lower surface 42 of the metal coil 40 by heat pressing. Before heat pressing bonding, the metal coil 40 is rolled up in the winder 61, and the metal coil 40 is released by the winder 61 and slowly passes through the preheating device 623, and the preheating device 623 preheats the upper surface 41 and the lower surface 42 of the metal coil 40. The preheated metal coil 40 slowly passes through the hot pressing roller 625 to bond with the dry film photoresist 50. Before hot pressing and laminating, the dry film photoresist 50 is rolled up in another winder 61. The dry film photoresist 50 of the present embodiment is also covered with at least a substrate layer 53 for supporting and protecting the dry film photoresist 50. The dry film photoresist 50 is slowly released from the winder 61 and the substrate layer 53 is peeled off. The dry film photoresist 50 with the substrate layer 53 peeled off is laminated to the metal coil 40 through the hot pressing roller 625. The metal coil 40 laminated with the dry film photoresist 50 is rolled up in the winder 61 for easy transfer to the next process.

[0066] Preferably, the process of hot pressing the dry film photoresist 50 to the metal coil 40 is performed in a vacuum environment to improve the adhesion between the dry film photoresist 50 and the upper surface 41 and the lower surface 42 of the metal coil 40. This prevents the dry film photoresist 50 from being drawn into and generating bubbles between the metal coil 40, improves the adhesion of the dry film photoresist 50, and prevents hole shape defects.

[0067] Step S30: patterning the dry film photoresist 50 by exposure and development.

[0068] Specifically, the dry film photoresist 50 is used for exposure and development to form a patterned dry film photoresist 50, and the patterned dry film photoresist 50 is used as a mask to transfer the designed pattern to the metal coil 40 for etching to form the required size and shape of the first side 10, the second side 20 and the through hole 30.

[0069] Specifically, exposure and development are performed in the exposure device 63 and the development device 64, respectively.

[0070] Specifically, the exposure device 63 at least includes a plurality of winders 61, a plurality of conveying rollers 632 and an exposure machine 633. In this embodiment, the exposure machine 633 is a vertical exposure machine 633, and the metal coil 40 attached with the dry film photoresist 50 is wound in the winder 61. The metal coil 40 is released from the winder 61 and is driven by the plurality of conveying rollers 632, thereby passing through the exposure machine 633 from top to bottom.

[0071] Specifically, the exposure machine 633 at least includes an exposure lamp 6331, an exposure machine frame 6332, a vacuum seal 6333, a first exposure mask 6334, and a second exposure mask 6335. The exposure machine frame 6332 is arranged in pairs, the first exposure mask 6334 and the second exposure mask 6335 are respectively arranged in the exposure machine frame 6332, and the first exposure mask 6334 and the second exposure mask 6335 are respectively located on both sides of the metal coil 40. Specifically, the first exposure mask 6334 is located on the side of the metal coil 40 where the first dry film photoresist 51 is attached, and the second mask is located on the side of the metal coil 40 where the second dry film photoresist 52 is attached, and the first exposure mask 6334 and the second exposure mask 6335 are opposite to each other and are arranged at a distance.

[0072] Before exposure, the first exposure mask 6334 and the second exposure mask 6335 are first aligned with each other with an alignment accuracy of less than 2 um.

[0073] More preferably, a metal coil 40 bonded to the dry film photoresist 50 is sandwiched between the first exposure mask 6334 and the second exposure mask 6335, and exposure is performed after vacuum bonding.

[0074] During exposure, a vacuum environment is formed between the first exposure mask 6334 and the second exposure mask 6335 through the vacuum seal 6333, so that the metal coil 40 is exposed in a vacuum environment. At this time, for the evaporation mask 100, the first exposure mask 6334 faces the first surface side 10 of the evaporation mask 100, and the second exposure mask 6335 faces the second surface side 20 of the evaporation mask 100, and the ambient temperature t of the first exposure mask 6334 and the second exposure mask 6335 is controlled at: -2°C ≤ t ≤ 2°C.

[0075] Specifically, in this embodiment, the exposure mask is a glass substrate patterned with chromium, and the exposure mask is one of soda-lime glass or quartz glass. In this embodiment, the exposure mask is soda-lime glass, and the chromium is specifically a diaphragm disposed on the glass substrate and an oxide diaphragm disposed on the diaphragm. This embodiment adopts the following specific parameters:

[0076]

[0077] After exposure, the metal coil 40 is wound up in the winder 61. This can minimize the tension applied to the metal plate, minimize the temperature deviation in the pattern, minimize the pattern size deviation in the glass pattern, and prevent the position deviation defect of the hole.

[0078] Specifically, the developing device 64 adopts a well-known developing device 64, and the exposed metal coil 40 is patterned in the developing device 64 to transfer the designed pattern to the dry film photoresist 50. Specifically, the patterned first dry film photoresist 51 is used to etch the upper surface 41 of the metal coil 40 to form the first side 10 of the evaporation mask 100, and the patterned second dry film photoresist 52 is used to etch the lower surface 42 of the metal coil 40 to form the second side 20 and the through hole 30 of the evaporation mask 100.

[0079] Step S40: etching the upper surface 41 through the patterned dry film photoresist 50 to form a first surface side 10;

[0080] Specifically, the dry film photoresist 50 includes a first dry film photoresist 51 and a second dry film photoresist 52. In this step, the upper surface 41 is etched by the patterned first dry film photoresist 51 to form the first side 10. Specifically, the patterned first dry film photoresist 51 is used as an etching mask to transfer the designed pattern to the upper surface 41 of the metal coil 40 to form the designed first side 10.

[0081] Specifically, the first surface side 10 includes at least a plurality of first recesses 11, the first recesses 11 include a first opening 111 and a first etched surface 112, the first opening 111 is located on the upper surface 41, the first opening 111 is flush with the upper surface 41, and the first etched surface 112 is a curved surface formed by the first opening 111 being recessed toward the lower surface 42. It can be understood that the first opening 111 is an opening profile formed by the first recess 11 on the upper surface 41, and the first etched surface 112 is a curved surface formed during the recessing of the first recess 11 toward the lower surface 42.

[0082] Specifically, before performing step S40 , in order to obtain etching conditions during actual etching, an etching condition adjustment process is first performed.

[0083] Specifically, in order to obtain the etching conditions during actual etching, the guide plate is first passed through the etching device. In this embodiment, the guide plate is made of 0.3 mm PET material (polyethylene terephthalate), and the etching surface for the first etching is pasted under the guide plate. In this embodiment, the upper surface 41 of the metal coil 40 is the etching surface for the first etching. Various etching conditions are obtained through etching tests combined with computer simulation.

[0084] Specifically, after the etching condition extraction is completed, the metal coil 40 actually used for etching is set in the etching equipment, and the guide plate is connected to the metal coil 40 actually used for etching. In this embodiment, the upper surface 41 is facing downward and the upper surface 41 is etched, and the etching liquid etches the upper surface 41 through the patterned first dry film photoresist 51 to form the first side 10. In this embodiment, the degree of etching is controlled by limiting the structural size of the first opening 111, and the specific process parameters can be specifically set according to the actual situation, and the process parameters are debugged with the structural size of the first opening 111 finally formed as the standard. After the etching is completed, it is fully washed with pure water, dried and then rolled up. In this way, the hole size during mass production can be correctly controlled.

[0085] Step S50: vacuum laminating resin 70 on the first surface side 10 to fill the first concave portion 11;

[0086] Specifically, the first groove is buried with resin 70 under vacuum environment. In this embodiment, the resin 70 covers the first surface side 10 in a fitting manner and buries the first concave portion 11 of the first surface side 10. The use of a vacuum environment is conducive to improving the tightness of the resin 70 and the first groove to prevent the etching liquid from entering the first concave portion 11 through the through hole 30. In this embodiment, the resin 70 is a thermoplastic acid-resistant resin 70. The resin 70 is a thin film structure in which the resin is coated on the substrate PET. As a result, bubbles can be prevented from entering between the resin and the first concave portion 11, and hole shape defects can be prevented.

[0087] Step S60: etching the lower surface 42 through the patterned dry film photoresist 50 to form the second surface side 20;

[0088] Specifically, in this step, the lower surface 42 is etched by the patterned second dry film photoresist 52 to form the second side 20. Specifically, the patterned second dry film photoresist 52 is used as an etching mask to transfer the designed pattern to the lower surface 42 of the metal coil 40 to form the designed second side 20.

[0089] Specifically, the second surface side 20 includes at least a plurality of second recesses 21, the second recesses 21 are recessed toward the upper surface 41, the second recesses 21 and the first recesses 11 penetrate each other to form a through hole 30, and the first etched surface 112 connects the first opening 111 and the through hole 30; it can be understood that a plurality of first recesses 11 correspond one-to-one to a plurality of second recesses 21, and a plurality of through holes 30 are formed through them.

[0090] Specifically, a longitudinal section perpendicular to the upper surface 41 and the lower surface 42 is defined, and the longitudinal section width of the first opening 111 is D, and the longitudinal section width of the through hole 30 is F, satisfying the relationship: 1um≤DF≤4um; when the above relationship is satisfied, during the etching process of the evaporation mask 100, the through hole 30 can be formed through two etchings when the thickness T of the metal coil 40 is not greater than 40um, thereby avoiding the first etching directly etching through the metal coil 40.

[0091] Specifically, before performing step S40, an etching condition adjustment step is first performed to obtain the etching conditions during actual etching. In order to obtain the etching conditions during actual etching, the guide plate is first passed through an etching device. In this embodiment, the guide plate is made of 0.3 mm PET material (Polyethylene terephthalate), and the etching surface for the first etching is attached to the lower part of the guide plate. In this embodiment, the lower surface 42 of the metal coil material 40 is the etching surface for the second etching, and the corresponding etching conditions are obtained by combining etching tests and computer simulations.

[0092] Specifically, after the etching condition extraction is completed, the metal coil 40 actually used for etching is set in the etching equipment, and the guide plate is connected to the metal coil 40 actually used for etching. In this embodiment, the upper surface 41 is etched downward, and the etching liquid etches the upper surface 41 through the patterned first dry film photoresist 51 to form the first side 10. In this embodiment, the degree of etching is controlled by limiting the structural size of the first opening 111. The specific process parameters can be set according to the actual situation, and the process parameters are adjusted based on the structural size of the first opening 111 finally formed. After the etching is completed, it is fully washed with pure water, dried and rolled up.

[0093] Step S70: stripping the resin 70 and the dry film photoresist 50;

[0094] The metal coil 40 is released into the stripping device, and the resin 70, the first dry film photoresist 51 and the second dry film photoresist 52 are stripped and fully washed with pure water. In this embodiment, the stripping treatment is achieved by one or a combination of inorganic alkali or organic alkali. In this way, the stripping of resin and the drying of dry film photoresist can be achieved in the same device.

[0095] Step S80: After stripping is completed, the metal coil 40 is cut into a plurality of metal sheets.

[0096] Specifically, the metal coil 40 is cut along a direction perpendicular to the winding direction of the metal coil 40 to form a plurality of sheet-shaped metal sheets.

[0097] Step S90: cutting the metal sheet to form a plurality of strip-shaped evaporation masks 100 .

[0098] Specifically, according to the designed evaporation mask 100 , the metal sheet is cut into strip-shaped evaporation masks 100 .

[0099] More preferably, after obtaining the strip-shaped evaporation mask 100 , a corresponding inspection process is performed according to actual needs.

[0100] Specifically, the automatic appearance inspection process automatically inspects all through holes 30 in the separated and cut evaporation mask 100 by comparing the through holes 30 on the periphery of the inspection target through hole; the average value of the peripheral through holes 30 is compared with the target through holes 30 by image processing; the comparative inspection is performed by comparing the area of ​​the through holes, as well as the shortest dimension and the longest dimension.

[0101] Specifically, the inspection process is confirmed, abnormal through-holes 30 are found, and a failure determination is performed.

[0102] Specifically, in the appearance sorting process, qualified vapor deposition masks 100 and defective vapor deposition masks 100 are sorted out according to actual requirements.

[0103] Specifically, in the dimension inspection step, a qualified vapor deposition mask 100 is placed, and the dimension parameters of the vapor deposition mask 100 are measured using a vapor deposition mask measuring machine.

[0104] Specifically, in the size sorting process, qualified vapor deposition masks 100 and defective vapor deposition masks 100 are selected according to actual requirements.

[0105] Specifically, in the visual appearance process, a qualified vapor deposition mask 100 is placed, and a vapor deposition mask visual inspection station is used to inspect the vapor deposition mask 100 for foreign matter, deformation, and the like.

[0106] Specifically, in the visual appearance sorting step, qualified vapor deposition masks 100 and defective vapor deposition masks 100 are sorted out according to actual requirements.

[0107] Specifically, in the packaging step, the qualified vapor deposition masks 100 screened through the above steps are arranged in a vacuum package according to a specified number.

[0108] In this embodiment, the key parameters involved in the evaporation mask 100 and the process are as follows:

[0109] Wherein, T is the thickness of the metal coil 40 , D is the longitudinal section width of the first opening 111 , and F is the longitudinal section width of the through hole 30 .

[0110] parameter size unit T 5 um D 7 um F 8 um

[0111] As another example, the following parameters may also be used:

[0112] parameter size unit T 25 um D 40 um F 42 um

[0113] As another example, the following parameters may also be used:

[0114] parameter size unit T 40 um D 55 um F 59 um

[0115] (Evaporation Mask Manufacturing Apparatus 60)

[0116] This embodiment provides a vapor deposition mask manufacturing device 60 for implementing the vapor deposition mask manufacturing method 100. Figures 8 to 16 The manufacturing device 60 includes: a winder 61, a first laminating device 62, an exposure device 63, a developing device 64, a first etching device 65, a second laminating device 66, a second etching device 67, a stripping device 68, a first cutting device 691 and a second cutting device 692. The metal coil 40 is transported by the winder 61 and passes through the first laminating device 62, the exposure device 63, the developing device 64, the first etching device 65, the second laminating device 66, the second etching device 67, the stripping device 68, and the first cutting device 691 in sequence.

[0117] Preferably, the coiler 61 is used to coil or release the metal coil 40;

[0118] Specifically, there are several winders 61, which are used in the first laminating device 62, the exposure device 63, the developing device 64, the first etching device 65, the second laminating device 66, the second etching device 67, the stripping device 68, the first cutting device 691 and the second cutting device 692. The winders 61 are used in pairs, one winder 61 releases the metal coil 40 wrapped thereon, and the other winder 61 winds up the metal coil 40 and wraps it thereon, so that the metal coil 40 slowly passes through the corresponding process equipment. The setting of the winder 61 can be flexibly used in combination with the conveying roller 632, the tensioning wheel, etc. according to actual needs.

[0119] More preferably, the first laminating device 62 is used to vacuum-laminate the dry film photoresist 50 on the upper surface 41 and the lower surface 42 of the metal coil 40 .

[0120] Specifically, the first bonding device 62 includes a vacuum chamber 621, a first winder 622, a preheating device 623, a second winder 624 and a hot pressing roller 625. The first winder 622, the preheating device 623, the second winder 624 and the hot pressing roller 625 are arranged in the vacuum chamber 621. The first winder 622 is arranged in pairs, and is used to convey the metal coil 40 so that it passes slowly through the preheating device 623 and the hot pressing roller 625 in sequence. The second winder 624 is used in conjunction with the first winder 622 and the hot pressing roller 625, and is used to convey the dry film photoresist 50 so that it is bonded to the upper surface 41 and the lower surface 42 of the metal coil 40 at the position of the hot pressing roller 625. In this embodiment, the dry film photoresist 50 is provided with a substrate layer 53 . The second winder 624 peels off the substrate layer 53 before attaching the dry film photoresist 50 to the metal coil 40 . The peeling process may adopt a known peeling method.

[0121] Specifically, before hot-pressing lamination, the metal coil 40 is rolled up in the first winder 622, and the metal coil 40 is released from the first winder 622 and slowly passes through the preheating device 623. The preheating device 623 preheats the upper surface 41 and the lower surface 42 of the metal coil 40, and the preheated metal coil 40 slowly passes through the hot-pressing roller 625 to be laminated with the dry film photoresist 50. Before hot-pressing lamination, the dry film photoresist 50 is rolled up in the second winder 624, and the dry film photoresist 50 is slowly released from the second winder 624 and peeled off the substrate layer 53. The dry film photoresist 50 peeled off the substrate layer 53 is laminated with the metal coil 40 through the hot-pressing roller 625, and the metal coil 40 laminated with the dry film photoresist 50 is rolled up in the first winder 622 to facilitate transfer to the next process.

[0122] Specifically, the vacuum chamber 621 forms a vacuum environment, and the process of hot pressing the dry film photoresist 50 to the metal coil 40 is performed in the vacuum environment, thereby improving the adhesion between the dry film photoresist 50 and the upper surface 41 and the lower surface 42 of the metal coil 40 .

[0123] Preferably, the exposure device 63 is used to expose the dry film photoresist 50. The exposure device 63 includes a third winder 631, a conveying roller 632, and an exposure machine 633. The third winder 631 is arranged in pairs, and is used to convey the metal coil 40 so that it slowly passes through the exposure machine 633. The conveying roller 632 cooperates with the third winder 631 to convey the metal coil 40. In this embodiment, the exposure machine 633 is a vertical exposure machine 633. When the metal coil 40 passes through the exposure machine 633, the pattern and material on the metal coil 40 release the tension before vacuum adhesion.

[0124] Specifically, the exposure machine 633 includes an exposure lamp 6331, an exposure machine frame 6332, a vacuum seal 6333, a first exposure mask 6334, and a second exposure mask 6335. The exposure machine frame 6332 is arranged in pairs, the first exposure mask 6334 and the second exposure mask 6335 are respectively arranged in the exposure machine frame 6332, and the first exposure mask 6334 and the second exposure mask 6335 are respectively located on both sides of the metal coil 40. Specifically, the first exposure mask 6334 is located on the side of the metal coil 40 where the first dry film photoresist 51 is attached, and the second mask is located on the side of the metal coil 40 where the second dry film photoresist 52 is attached, and the first exposure mask 6334 and the second exposure mask 6335 are opposite and spaced apart.

[0125] Specifically, the developing device 64 is used to develop the dry film photoresist 50 to achieve patterning. In this embodiment, the developing device 64 includes a developing device 641 and a fourth winder 642. The fourth winder 642 is arranged in pairs and is used to convey the metal coil 40 to slowly pass through the developing device 641. The developing device 641 adopts a well-known device for achieving development.

[0126] Specifically, the first etching device 65 etches the upper surface 41 through the patterned dry film photoresist 50 to form the first surface side 10 .

[0127] Specifically, the first surface side 10 includes at least a plurality of first recesses 11, the first recess 11 includes a first opening 111 and a first etched surface 112, the first opening 111 is flush with the upper surface 41, and the first etched surface 112 is a surface that is recessed from the first opening 111 to the lower surface 42. In this embodiment, the first etched surface 112 is a curved surface.

[0128] Specifically, the second laminating device 66 is used to vacuum-laminate the resin 70 on the first surface side 10 to fill the first recess 11 .

[0129] Specifically, the second etching device 67 etches the lower surface 42 through the patterned dry film photoresist 50 to form the second surface side 20 .

[0130] Specifically, the second surface side 20 includes at least a plurality of second recesses 21, the second recesses 21 are recessed toward the upper surface 41, the second recesses 21 and the first recesses 11 penetrate each other to form a through hole 30, and the first etched surface 112 connects the first opening 111 and the through hole 30; a longitudinal section perpendicular to the upper surface 41 and the lower surface 42 is defined, and the longitudinal section width of the first opening 111 is D, and the longitudinal section width of the through hole 30 is F, satisfying the relationship: 1um≤DF≤4um;

[0131] Specifically, the stripping device 68 is used to strip the resin 70 and the dry film photoresist 50. In this embodiment, the stripping device 68 implements the stripping process by using one or a combination of inorganic bases or organic bases;

[0132] Specifically, the first cutting device 691 is used to cut the metal coil 40 into a plurality of metal sheets.

[0133] Specifically, the second cutting device 692 is used to cut the metal sheet to form a plurality of strip-shaped evaporation masks 100 .

[0134] (Organic Display Device)

[0135] This embodiment provides an organic display device.

[0136] The organic display device is manufactured by vapor deposition using the vapor deposition mask device 4000 .

[0137] Thus, by limiting the longitudinal section width of the first opening of the evaporation mask to D and the longitudinal section width of the through hole to F, the relationship 1um≤DF≤4um is satisfied. Thus, during the manufacturing process of the evaporation mask, when the thickness of the metal coil T is not greater than 40um, a through hole can be formed through two etchings, thereby avoiding the first etching directly corroding the metal coil.

[0138] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not drive the essence of the corresponding technical solutions away from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A vapor deposition mask, the vapor deposition mask being used in vapor deposition of a vapor deposition material onto a vapor deposition substrate, the vapor deposition mask Modules include: A first surface side, which constitutes a side of the evaporation mask facing the evaporation substrate; a second surface side constituting a side of the vapor deposition mask opposite to the first surface side; and a through hole penetrating the first surface side and the second surface side, Characterized in that the thickness T from the first surface side to the second surface side satisfies the relationship: 5um≤T≤25um; The first surface side includes at least a plurality of first recesses, the first recesses surround the through hole, the first recesses include a first opening and a first etched surface, the first etched surface is a surface formed by being recessed from the first opening to the second surface side; the second surface side includes at least a plurality of second recesses, the second recesses are recessed toward the first surface side, the second recesses and the first recesses penetrate to form a through hole, and the first etched surface connects the first opening and the through hole; a longitudinal section perpendicular to the first surface side and the second surface side is defined, the longitudinal section width of the first opening is defined as D, and the longitudinal section width of the through hole is defined as F, then the relationship is satisfied: 1um≤DF≤4um; The first surface side further includes a first support portion, the first support portion surrounding the first recess; The second surface side further includes a second support portion, the second support portion is a plane, and the thickness T from the first surface side to the second surface side is the thickness from the first support portion to the second support portion; The second supporting portion is formed between the plurality of second recessed portions, and a projection of the second supporting portion on the first surface side is located inside the first supporting portion; The second concave portion includes a second opening and a second etched surface, the second opening is connected to the second supporting portion, the second etched surface bends and extends from the second opening toward the through hole, and the second etched surface connects the second opening and the through hole.

2. The evaporation mask according to claim 1, characterized in that: The first support portion is a plane, and a thickness T from the first surface side to the second surface side is a thickness from the first support portion to the second surface side.

3. A vapor deposition mask assembly, characterized in that: It comprises the evaporation mask as described in any one of claims 1-2.

4. A vapor deposition mask device, characterized in that: It comprises a vapor deposition mask assembly as claimed in claim 3.

5. An organic display device, characterized in that: The organic display device is obtained by performing vapor deposition using the vapor deposition mask device as claimed in claim 4.

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