Semiconductor devices

Abstract

The semiconductor device (50) of the present invention comprises: a thick copper component (14) forming a plurality of external electrode terminals (5, 6) and having a semiconductor chip (1) mounted on one of the terminals; a printed circuit board (3) arranged on the surface of the thick copper component (14) and having an opening (29) exposing a portion of the surface of the thick copper component (14), a wiring pattern (21) and a conductive through hole (7) connecting the pattern (21) to the thick copper component (14); a chip (1) mounted on the surface of the thick copper component (14) exposed by the opening (29) and connected to the pattern (21) via a metal wire (12); an electronic component (4) mounted on the surface of the printed circuit board (3) opposite to the thick copper component (14) and connected to the pattern (21); and a cover (10) or epoxy resin (28) sealing the surface of the printed circuit board (3) opposite to the thick copper component (14), the chip (1), the electronic component (4) and the metal wire (12).

Description

Technical Field

[0001] The present application relates to a semiconductor device. Background Art

[0002] For wireless communication systems represented by mobile phone base stations, the fifth generation mobile communication system (5G) is expected to be enabled as the next generation communication method in the future. Compared with previous systems, this communication system is a communication method that can connect a large number of simultaneous and large-capacity connections, and it is particularly believed that antennas are set in many areas centered on high-density areas. In order to achieve these requirements, a small, low-power, and low-cost semiconductor device is required, which does not have an extreme cost increase compared to the semiconductor device used in the fourth generation mobile communication system.

[0003] Currently, in consideration of customer convenience, semiconductor devices for wireless communications such as mobile communication systems adopt the following module structure, that is, high-frequency circuits are formed on a printed circuit substrate, semiconductor element chips (semiconductor chips) and electronic components such as chip capacitors are simultaneously mounted on these circuits, and high-frequency signals are integrated on the printed circuit substrate.

[0004] In general, the printed circuit board used in the semiconductor device of the module structure uses an organic substrate with glass epoxy resin as the base material. However, the thermal conductivity of these base materials is very poor, so the thermal impedance is high. In the case of an amplifier using a semiconductor element (active element) that performs active operation with a high power density, such as a GaN (Gallium Nitride) element, the temperature rise of the semiconductor element causes the characteristics to deteriorate. Therefore, the thermal impedance of the semiconductor element itself must be reduced, and the gate spacing of the semiconductor element constituting the amplifier must be widened to more than the necessary amount, so that there is a problem that the size of the chip formed with the semiconductor element becomes larger. With the increase in the chip size of the semiconductor element, the mounting area increases, and thus the increase in the package size of the semiconductor device becomes a problem. If the size of the semiconductor element becomes larger, the cost of the chip increases, so it is desired that the size of the semiconductor element is as small as possible.

[0005] In order to reduce the thermal impedance of semiconductor devices, there are also structures such as QFN (Quad Flat Non lead package) and MMIC (Monolithic Microwave Integrated Circuit) with built-in high-frequency circuit is directly mounted on a copper frame, or a semiconductor device is formed by forming a high-frequency circuit as a passive element on another chip (semiconductor chip) of a semiconductor such as GaAs (Gallium Arsenide) to reduce costs and directly mounting an active element (semiconductor chip) on a copper frame, thereby reducing the thermal impedance of the semiconductor device. However, if a large number of semiconductor chips are used, the mounting area increases, thereby increasing the package size of the semiconductor device.

[0006] In a package structure using a lead frame such as QFN, the semiconductor chip of active components and passive components is directly mounted on a copper frame. However, if the high-frequency circuit used becomes complicated, for example, in the case of using a Doherty circuit used in a high-output amplifier for a base station, in order to construct the entire Doherty circuit on one chip, that is, to make it MMIC, the chip size becomes huge, and it is generally difficult to make the entire circuit IC and put it in one package at frequencies below 6 GHz. In addition, even at frequencies above 6 GHz, the cost of the chip increases, thereby increasing the cost of the semiconductor device.

[0007] In order to accommodate a complex high-frequency circuit in one package, a printed circuit board with multilayer wiring is generally used. Patent document 1 discloses a semiconductor device having a first glass epoxy substrate on which a semiconductor element is mounted on the surface, a second glass epoxy substrate on which solder bumps are formed, and a plurality of solid electrolytic capacitors embedded in a composite layer between the first glass epoxy substrate and the second glass epoxy substrate.

[0008] Patent Document 1: Japanese Patent Application Publication No. 2006-216755 ( Figure 1 )

[0009] The packaging structure of the semiconductor device disclosed in Patent Document 1 can form a circuit using multi-layer wiring and electronic components such as solid electrolyte capacitors formed on the first and second glass epoxy substrates (printed circuit boards), so that complex high-frequency circuits can be mounted on the semiconductor device. However, for a conventional printed circuit board, that is, a two-sided printed circuit board (two-sided printed circuit board) with a high-frequency circuit formed on the upper and lower surfaces (front and back), or a printed circuit board (multi-layer printed circuit board) stacked using a build-up method, the thermal conductivity is low, so that the heat generated by the semiconductor element cannot be fully dissipated, that is, the heat dissipation is poor. Therefore, the thermal impedance of the semiconductor device becomes higher, and as a result, in order to reduce the thermal impedance of the active element itself, it is necessary to expand the gate interval of the active element, thereby causing the problem of increasing the chip size of the active element.

[0010] The semiconductor device package structure disclosed in Patent Document 1 can carry a complex high-frequency circuit, but due to the insufficient heat dissipation of the printed circuit board, the chip size of the semiconductor element increases, and there is a problem of increasing the package size of the semiconductor device. Therefore, the semiconductor device package structure disclosed in Patent Document 1 cannot carry a complex high-frequency circuit while having high heat dissipation without increasing the package size. Summary of the invention

[0011] The purpose of the technology disclosed in this application specification is to provide a semiconductor device having high heat dissipation performance and capable of mounting a complex high-frequency circuit, that is, to provide a semiconductor device capable of maintaining high heat dissipation performance even when a complex high-frequency circuit is mounted.

[0012] An example of a semiconductor device disclosed in the present application specification is a semiconductor device in which a plurality of external electrode terminals connected to a device to be installed are formed on the back side and a semiconductor chip for processing high-frequency signals is mounted. An example of a semiconductor device comprises: a thick copper component, forming a plurality of external electrode terminals, and a semiconductor chip is mounted on one of the plurality of external electrode terminals; and a printed circuit substrate, arranged on the surface of the thick copper component, and having an opening portion that exposes a portion of the surface of the thick copper component, a wiring pattern, and a conductive through hole that connects the wiring pattern to the thick copper component. An example of a semiconductor device also comprises: a semiconductor chip, mounted on the surface of the thick copper component exposed through the opening portion, and connected to the wiring pattern through a metal wire; an electronic component, mounted on the surface of the printed circuit substrate that is opposite to the thick copper component and connected to the wiring pattern; and a cover or epoxy resin that seals the surface of the printed circuit substrate that is opposite to the thick copper component, the semiconductor chip, the electronic component, and the metal wire.

[0013] A semiconductor device of an example disclosed in the present application specification has a semiconductor chip mounted on the surface of a thick copper member exposed through an opening formed in a printed circuit board, and the back surface of the thick copper member is exposed, so that even if a complex high-frequency circuit is installed, high heat dissipation performance can be maintained. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of a cross section of the semiconductor device according to the first embodiment.

[0015] Figure 2 Yes means Figure 1 A diagram showing a component arrangement on the surface side of a semiconductor device.

[0016] Figure 3 Yes means Figure 1 FIG. 1 is a diagram of the back side of a semiconductor device.

[0017] Figure 4 This is a schematic diagram of a cross section of another semiconductor device according to the first embodiment.

[0018] Figure 5 It is a schematic diagram of a cross section of a semiconductor device according to the second embodiment.

[0019] Figure 6 It is a schematic diagram of a cross section of a semiconductor device according to a third embodiment.

[0020] Figure 7 It is a schematic diagram of a cross section of a semiconductor device according to a fourth embodiment.

[0021] Figure 8 It is a schematic diagram of a cross section of a semiconductor device according to a fifth embodiment.

[0022] Fig. 9 Yes means Figure 8 Figure 1. A first example of a connected component.

[0023] Fig.10 Yes means Figure 8 FIG. 4 is a diagram of a second example of a connected component.

[0024] Fig.11 Yes means Figure 8 FIG. 1 is a diagram of the back side of a semiconductor device.

[0025] Fig.12 It is a schematic diagram of a cross section of a semiconductor device according to a sixth embodiment.

[0026] Fig.13 It is a schematic diagram of a cross section of a semiconductor device on which a semiconductor chip and a ceramic substrate are mounted. DETAILED DESCRIPTION

[0027] Implementation Method 1

[0028] Figure 1 It is a schematic diagram of a cross section of the semiconductor device according to the first embodiment. Figure 2 Yes means Figure 1 A diagram showing a component arrangement on the surface side of a semiconductor device, Figure 3 Yes means Figure 1 FIG. 1 is a diagram of the back side of a semiconductor device. Figure 1 The schematic diagram of the cross section is Figure 2 Schematic diagram of the cross section of AA in . The semiconductor device 50 of embodiment 1 includes a printed circuit board 3, semiconductor chips 1, 2, electronic components 4, a thick copper component 14 formed on the back side of the printed circuit board 3, and a cover 10 that seals the semiconductor chips 1, 2, the electronic components 4, and the surface (the surface opposite to the back side) of the printed circuit board 3. The printed circuit board 3 is a general-purpose printed circuit board that is generally used. The printed circuit board 3 includes a resin substrate 23 using a material based on a resin such as FR-4 (Flame Retardant Type 4) or FR-5 (Flame Retardant Type 5), a high-frequency circuit formed by a wiring pattern 21 on the surface or inner layer of the resin substrate 23, and an opening 29 that is a hole formed by passing through a part of the printed circuit board 3. The thick copper component 14 is thick copper having a thickness of more than 100 μm, and external electrode terminals 5, 6 are formed by the thick copper component 14. The external electrode terminals 5 are external electrode terminals on which the semiconductor chips 1 and 2 are mounted, and the external electrode terminals 6 are external electrode terminals arranged on the outer peripheral side of the external electrode terminals 5. The opening 29 of the printed circuit board 3 is formed to expose a portion of the surface of the external electrode terminals 5. The semiconductor chip 1 is a semiconductor chip that processes high-frequency signals with a frequency of more than 1 GHz and outputs a power of more than 1 W, that is, a semiconductor element (active element) that performs active operation with high power density is formed. The active element formed on the semiconductor chip 1 is, for example, a GaN element with high power density. The semiconductor chip 2 is a semiconductor chip that is formed with passive elements such as a transmission line that constitutes a part of the high-frequency circuit mounted on the semiconductor device 50. The semiconductor chip 2 is, for example, a chip of a semiconductor such as GaAs.

[0029] exist Figure 1 , a printed circuit board 3 having two layers of wiring patterns 21 (a first wiring pattern 22a and a second wiring pattern 22b) is shown. The wiring pattern on the surface side of the printed circuit board 3 is the first wiring pattern 22a, and the wiring pattern formed in the inner layer of the printed circuit board 3 is the second wiring pattern 22b. Figure 2As shown, the first wiring pattern 22a is patterned by a plurality of wirings 25. The second wiring pattern 22b is also patterned by a plurality of wirings 25 in the same manner as the first wiring pattern 22a. The electronic component 4 is a passive element such as a chip capacitor, and is a component constituting a high-frequency circuit of the semiconductor device 50. The electronic component 4 is placed on the position where the wiring 25 of the first wiring pattern 22a is set, that is, on the configured solder, using a mounter, and the solder is melted by reflow or the like, thereby fixing it to the printed circuit board 3.

[0030] The semiconductor chips 1 and 2 are directly mounted on the surface of the external electrode terminal 5 exposed through the opening 29 of the printed circuit board 3 (the surface facing the printed circuit board 3) through a die bonding material 8. The die bonding material 8 is a silver paste or sintered silver having a low curing temperature (less than 260°C) and low thermal resistance. The opening 29, which is a through hole formed in the printed circuit board 3, is formed as a cavity 9. The semiconductor chips 1 and 2 mounted on the surface of the external electrode terminal 5 are connected to the first wiring pattern 22a on the surface of the printed circuit board 3 through a metal wire 12. The first wiring pattern 22a on the surface of the printed circuit board 3 is connected to the second wiring pattern 22b inside the printed circuit board 3 through a conductive via 7 filled with copper in the through hole 27, that is, a conductive via 7. The second wiring pattern 22b is connected to the external electrode terminals 5 and 6 formed on the back side of the printed circuit board 3 through the conductive via 7 filled with copper in the through hole 27. The wiring pattern 21 formed on the printed circuit board 3 and the external electrode terminals 5 and 6 are electrically connected via the conductive via 7. In general, a metal plating layer is formed on the inner surface of the through hole 27, and the resin base material 23 of the printed circuit board 3 is filled inside the metal plating layer. However, the through hole 7 of the first embodiment is a structure in which the through hole 27 is filled with copper, so the heat dissipation performance of the printed circuit board 3 can be improved.

[0031] Figure 1 The printed circuit board 3 of the multilayer structure shown is manufactured by, for example, repeatedly performing lamination of a resin base material 23 and a metal layer (copper layer) for wiring, hole opening processing (through hole forming processing), via hole filling, and wiring forming processing after forming wiring constituting a high-frequency circuit using a build-up method. In addition, the printed circuit board 3 is not limited to a printed circuit board of a multilayer structure, that is, a multilayer printed circuit board, and may be a single-sided printed circuit board with a wiring layer only on the surface, or a double-sided printed circuit board with wiring layers formed on the surface and the back.

[0032] The assembly method of the semiconductor device 50 is described. A printed circuit board with thick copper is prepared in which a thick copper component 14 is formed on the back side of the printed circuit board 3 where the opening 29 is not formed. Solder is formed at a desired position on the first wiring pattern 22a on the surface side of the printed circuit board 3 by a solder printing method or the like. The electronic component 4 is placed on the solder using a chip mounter, and the solder is melted by reflow or the like, thereby fixing it to the printed circuit board 3 (electronic component mounting process). In addition, in order to remove the flux component contained in the solder as needed, there is also a case where a cleaning solution is used for cleaning.

[0033] On the thick copper printed circuit board on which the electronic components 4 are mounted, an opening 29 reaching the thick copper component 14 is formed by laser or drilling in the region where the semiconductor chips 1 and 2 are mounted (opening forming step). After the opening 29 is formed on the thick copper printed circuit board, the semiconductor chips 1 and 2 are directly mounted on the surface of the external electrode terminal 5 exposed through the opening 29 (the surface facing the printed circuit board 3) through the patch material 8 (semiconductor chip mounting step).

[0034] Thereafter, the wiring pattern 21 formed on the printed circuit board 3 is connected to the semiconductor chips 1 and 2 using metal wires 12 such as gold wires (wire connection step). In addition, in the wire connection step, the semiconductor chip 1 is connected to the semiconductor chip 2 using metal wires 12. Through the wire connection step, the semiconductor chip 1 having active elements is connected to the semiconductor chip 2 having passive elements and a high-frequency circuit outside the semiconductor chip 2, so that an electrical signal flows between the semiconductor chip 1 having active elements and the high-frequency circuit. The basic structure of the semiconductor device 50 after performing the electronic component mounting step, the opening forming step, the semiconductor chip mounting step, and the wire connection step is formed. Figure 1 The structure such as the cover 10 is removed.

[0035] For the basic structure of the semiconductor device 50 after the electronic component mounting step, the opening forming step, the semiconductor chip mounting step, and the wire connecting step, the printed circuit board 3, the electronic component 4, and the semiconductor chips 1 and 2 are sealed by a cover 10 formed of metal or resin (cover sealing step). Figure 4 As shown, the basic structure of the semiconductor device 50 may be sealed by epoxy resin 28 . Figure 4 FIG. 1 is a schematic diagram of a cross section of another semiconductor device according to Embodiment 1. Figure 4In the case of the semiconductor device 50 shown, a resin sealing step is performed. In the resin sealing step, the basic structure of the semiconductor device 50 is inserted into a transfer mold and the printed circuit board 3, the electronic component 4, and the semiconductor chips 1 and 2 are sealed with the molten epoxy resin 28.

[0036] When the printed circuit board 3 subjected to the cover sealing step or the resin sealing step is formed so as to seal a plurality of semiconductor devices 50 , the printed circuit board 3 is divided into pieces using a dicing machine or the like to separate the semiconductor devices one by one.

[0037] exist Figure 2 , a semiconductor device 50 having one semiconductor chip 1 and two semiconductor chips 2 is shown, but the present invention is not limited thereto. At least one semiconductor chip 1 may be mounted. In addition, when the semiconductor device 50 includes a Doherty circuit, two active elements are required, and thus two active elements are formed on the semiconductor chip 1. In addition, when the semiconductor device 50 includes a Doherty circuit, two active elements may be formed on each semiconductor chip 1. In this case, two semiconductor chips 1 are mounted on the semiconductor device 50.

[0038] The printed circuit board 3 used for the semiconductor device 50 of the first embodiment is a general-purpose printed circuit board having a through opening 29 formed in a local area in a single-sided printed circuit board or a double-sided printed circuit board with a high-frequency circuit formed on the surface, or a multi-layer printed circuit board formed by stacking printed circuit boards with high-frequency circuits. The semiconductor device 50 of the first embodiment is a structure in which the printed circuit board 3, which is a general-purpose printed circuit board, and the thick copper member 14 are combined. The semiconductor device 50 of the first embodiment directly mounts one or more semiconductor chips 1, or one or more semiconductor chips 1 and a semiconductor chip 2 constituting a part of the high-frequency circuit, on the bottom surface of the cavity 9 formed in the printed circuit board 3, that is, the surface of the external electrode terminal 5 exposed through the opening 29. Therefore, the semiconductor device 50 of the first embodiment dissipates the heat generated from the semiconductor chip 1 with an active element formed thereon to the thick copper member 14 (external electrode terminal 5), and can effectively dissipate the heat without passing through the resin base material 23 of the printed circuit board 3 having poor thermal conductivity. Therefore, the semiconductor device 50 of the first embodiment can ensure high heat dissipation and prevent the degradation of high-frequency characteristics caused by heat. In addition, the semiconductor device 50 of the first embodiment directly mounts one or more semiconductor chips 1, or one or more semiconductor chips 1 and a semiconductor chip 2 constituting a part of a high-frequency circuit, on the surface of the external electrode terminal 5 through the patch material 8 with low thermal impedance, thereby achieving higher heat dissipation and thus achieving excellent high-frequency characteristics.

[0039] In addition, the semiconductor device 50 of the first embodiment can carry electronic components 4 such as chip capacitors by using the printed circuit substrate 3, and a high-frequency circuit for integrating high-frequency signals is formed on the printed circuit substrate, that is, high-frequency integration can be performed through the printed circuit substrate 3. In addition, the semiconductor device 50 of the first embodiment can form a part of the high-frequency circuit in the printed circuit substrate 3 by using the printed circuit substrate 3 with a multilayer structure, so that a complex high-frequency circuit can be formed without extremely increasing the area of ​​the front side and the back side of the semiconductor device.

[0040] The semiconductor device 50 of the first embodiment can realize the basic functions, namely, the function of integrating high-frequency signals of 1 GHz or more for signal processing of the semiconductor chip 1 used in the mobile communication system, etc., and the function of discharging the heat generated by the power of 1 W or more output by the semiconductor chip 1, by combining the printed circuit substrate 3 of the multilayer structure and the thick copper component 14. The semiconductor device 50 of the first embodiment can realize a complex circuit structure represented by the Doherty circuit used in the base station amplifier by combining the printed circuit substrate 3 of the multilayer structure and the thick copper component 14. The semiconductor device 50 of the first embodiment can realize high heat dissipation by combining the printed circuit substrate 3 of the multilayer structure and the thick copper component 14, so there is no need to increase the gate interval of the active element formed on the semiconductor chip 1, that is, the miniaturization of the semiconductor chip 1 can be realized, so it can be realized inexpensively. The semiconductor device 50 of the first embodiment has a packaging structure that has a sufficient heat dissipation function even if a complex circuit structure is installed, so it can realize high-performance high-frequency characteristics.

[0041] As described above, the semiconductor device 50 of the first embodiment is a semiconductor device in which a plurality of external electrode terminals 5 and 6 connected to the mounted mounting target device are formed on the back surface and a semiconductor chip 1 for processing high-frequency signals is mounted. The semiconductor device 50 of the first embodiment includes: a thick copper component 14, in which a plurality of external electrode terminals 5 and 6 are formed, and the semiconductor chip 1 is mounted on one of the plurality of external electrode terminals 5 and 6; and a printed circuit board 3, which is arranged on the surface of the thick copper component 14 and includes an opening 29 that exposes a portion of the surface of the thick copper component 14, a wiring pattern 21, and a conductive through hole 7 that connects the wiring pattern 21 and the thick copper component 14. The semiconductor device 50 of the first embodiment further comprises: a semiconductor chip 1 mounted on the surface of the thick copper member 14 exposed through the opening 29 and connected to the wiring pattern 21 through the metal wire 12; an electronic component 4 mounted on the surface of the printed circuit board 3 on the side opposite to the thick copper member 14 and connected to the wiring pattern 21; and a cover 10 or epoxy resin 28 for sealing the surface of the printed circuit board 3 on the side opposite to the thick copper member 14, the semiconductor chip 1, the electronic component 4, and the metal wire 12. The semiconductor device 50 of the first embodiment has such a structure that the semiconductor chip 1 is mounted on the surface of the thick copper member 14 exposed through the opening 29 formed in the printed circuit board 3 and the back side of the thick copper member 14 is exposed, so that even if a complex high-frequency circuit is mounted, high heat dissipation can be maintained.

[0042] Implementation Method 2

[0043] Figure 5 Schematic diagram of the cross section of the semiconductor device involved in the second embodiment. The same reference numerals are given to the same structural elements as those of the semiconductor device 50 of the first embodiment, and repeated descriptions are omitted. In addition, in other embodiments, the same reference numerals are given to the same structural elements as those of the semiconductor device 50 of the first embodiment, and repeated descriptions are omitted. The semiconductor device 50 of the second embodiment is different from the semiconductor device 50 of the first embodiment in that a recess 11 is formed on the side of the opening 29 of the printed circuit board 3, that is, the recess 11 is provided on the side of the opening 29. The recess 11 can be located at any position on the side of the opening 29.

[0044] The cavity 9 formed in the printed circuit board 3 shown in the first embodiment is preferably as small as possible because the area of ​​the printed circuit board 3 used to constitute other high-frequency circuits is limited. Therefore, it is difficult to ensure a sufficiently wide area as the mounting area in the cavity 9, that is, the surface area of ​​the external electrode terminal 5 exposed through the opening 29, as the area for mounting the semiconductor chips 1 and 2 by the patch material 8 such as silver paste or sintered silver, so high accuracy is required for the coating amount and coating position of the patch material 8. Therefore, when the coating amount and position accuracy of the patch material 8 vary and the patch material 8 is coated in the cavity 9 in an amount greater than the necessary amount, the patch material 8 climbs up the side of the opening 29, and the patch material 8 may contaminate the connection area of ​​the first wiring pattern 22a connecting the metal wire 12. However, since the semiconductor device 50 of the second embodiment has the recess 11 formed on the side of the opening 29 of the printed circuit board 3, the unnecessary patch material 8 escapes into the recess 11, thereby preventing the patch material 8 from climbing up the surface of the printed circuit board 3.

[0045] The semiconductor device 50 of the second embodiment can make the unnecessary patch material 8 escape to the recess 11, so the high coating accuracy of the patch material 8 is not required. Since the semiconductor device 50 of the second embodiment does not need to improve the coating accuracy of the patch material 8, the functional constraints of the device for coating the patch material 8 can be reduced. In addition, the semiconductor device 50 of the second embodiment can prevent the patch material 8 from climbing up the side of the opening 29, thereby preventing the contamination of the connection area of ​​the metal wire 12 in the printed circuit board 3, thereby improving the assembly yield of the semiconductor device 50, thereby achieving high-quality metal wire connection (wire bonding). In addition, since the semiconductor device 50 of the second embodiment has the structure of the semiconductor device 50 of the first embodiment, it has the same effect as the semiconductor device 50 of the first embodiment.

[0046] Implementation 3

[0047] Figure 6 Schematic diagram of the cross section of the semiconductor device involved in the third embodiment. The semiconductor device 50 of the third embodiment is different from the semiconductor device 50 of the first embodiment in that the height of the first wiring pattern 22a formed on the surface of the printed circuit board 3 is -10% to +10% of the height of the semiconductor chips 1 and 2 based on the thick copper part 14. Figure 6 , an example is shown in which the height of the first wiring pattern 22a formed on the surface of the printed circuit board 3 relative to the thick copper component 14 is equal to the height of the semiconductor chips 1 and 2 relative to the thick copper component 14, that is, an example in which the surface position of the first wiring pattern 22a formed on the surface of the printed circuit board 3 is equal to the surface position of the semiconductor chips 1 and 2. Figure 6As shown, the surface position of the first wiring pattern 22a based on the thick copper member 14 is equal to the surface position of the semiconductor chips 1 and 2. For the semiconductor device 50 of the third embodiment, the surface position of the first wiring pattern 22a based on the thick copper member 14 is equal to the surface position of the semiconductor chips 1 and 2, so the length of the metal wire 12 connecting the first wiring pattern 22a of the printed circuit board 3 and the semiconductor chips 1 and 2 can be formed to be the shortest.

[0048] A method for making the surface position of the first wiring pattern 22a based on the thick copper component 14 equal to the surface position of the semiconductor chips 1 and 2 is described. The first method is a method of thinning the thickness of the printed circuit board 3 to make the surface position of the first wiring pattern 22a based on the thick copper component 14 equal to the surface position of the semiconductor chips 1 and 2. For example, the thickness of the printed circuit board 3 can be changed by selecting the dielectric constant of the resin base material 23 of the printed circuit board 3. In addition, the thickness of the first wiring patterns 22a and 22b can also be changed. The second method is a method of thickening the semiconductor chips 1 and 2 to make the surface position of the first wiring pattern 22a based on the thick copper component 14 equal to the surface position of the semiconductor chips 1 and 2. The third method is a method of using the first method and the second method together to make the surface position of the first wiring pattern 22a based on the thick copper component 14 equal to the surface position of the semiconductor chips 1 and 2. In Figure 6 , an example is shown in which the surface position of the first wiring pattern 22 a with respect to the thick copper member 14 is made equal to the surface position of the semiconductor chips 1 and 2 by the third method.

[0049] In the example where the height of the first wiring pattern 22a formed on the surface of the printed circuit board 3 based on the thick copper member 14 is equal to the height of the semiconductor chips 1 and 2 based on the thick copper member 14, the length of the metal wire 12 connecting the first wiring pattern 22a of the printed circuit board 3 and the semiconductor chips 1 and 2 can be formed to be the shortest. However, as long as the height of the first wiring pattern 22a formed on the surface of the printed circuit board 3 based on the thick copper member 14 is -10% to +10% of the height of the semiconductor chips 1 and 2 based on the thick copper member 14, the first wiring pattern 22a and the semiconductor chips 1 and 2 can be connected by the metal wire 12 of a sufficiently short length.

[0050] The high-frequency circuit formed on the printed circuit board 3 includes a metal wire 12 that connects the semiconductor chip 1 formed with active elements, the semiconductor chip 2 formed with passive elements, and the first wiring pattern 22a. If the length of the metal wire 12 can be shortened, the structure of the high-frequency circuit formed after the connection process of the metal wire 12 can be made free. In other words, the adjustment of the high-frequency circuit can be made easy. If the metal wire 12 is longer than necessary, it is necessary to form a circuit for offsetting the unnecessary length after the connection process of the metal wire 12, so that the adjustment of the high-frequency circuit becomes complicated, the adjustment work becomes longer, and the productivity is reduced.

[0051] The semiconductor device 50 of the third embodiment can improve the degree of freedom of the structure of the high-frequency circuit, that is, the degree of freedom of the design of the high-frequency circuit, by shortening the length of the metal wire 12 connecting the semiconductor chips 1 and 2 and the first wiring pattern 22a formed on the surface of the printed circuit board 3. In addition, the semiconductor device 50 of the third embodiment can suppress the deviation of the high-frequency characteristics caused by the deviation of the wire length by configuring the metal wire 12 with a short wire length. Since the semiconductor device 50 of the third embodiment has the structure of the semiconductor device 50 of the first embodiment, it has the same effect as the semiconductor device 50 of the first embodiment.

[0052] Implementation 4

[0053] Figure 7 Schematic diagram of the cross section of the semiconductor device involved in the fourth embodiment. The semiconductor device 50 of the fourth embodiment is different from the semiconductor device 50 of the first embodiment in that the printed circuit board 3 is a multilayer printed circuit board, and the height of the second wiring pattern 22b inside exposed by the opening 29 formed in a step shape is -10% to +10% of the height of the semiconductor chips 1 and 2 based on the thick copper part 14. Figure 7 , an example is shown in which the height of the second wiring pattern 22b exposed by the step-shaped opening 29 with respect to the thick copper part 14 is equal to the height of the semiconductor chips 1 and 2 with respect to the thick copper part 14, that is, the surface position of the second wiring pattern 22b exposed by the step-shaped opening 29 is equal to the surface position of the semiconductor chips 1 and 2. Figure 7 As shown, the surface position of the second wiring pattern 22b inside the printed circuit board 3 based on the thick copper component 14 is equal to the surface position of the semiconductor chips 1 and 2. Since the surface position of the second wiring pattern 22b inside the printed circuit board 3 based on the thick copper component 14 is equal to the surface position of the semiconductor chips 1 and 2, the semiconductor device 50 of the fourth embodiment can form the length of the metal wire 12 connecting the second wiring pattern 22b of the printed circuit board 3 and the semiconductor chips 1 and 2 to the shortest.

[0054] When the high-frequency circuit mounted on the semiconductor device 50 is complex, the number of layers of the multi-layer printed circuit substrate 3 is increased, thereby increasing the thickness of the printed circuit substrate 3. When the surface position of the first wiring pattern 22a on the surface of the printed circuit substrate 3 based on the thick copper component 14 is higher than the surface position of the semiconductor chips 1 and 2, the wiring pattern (second wiring pattern 22b) inside the multi-layer printed circuit substrate 3 is appropriately selected and an opening 29 is formed in a manner that exposes the wiring pattern (second wiring pattern 22b), thereby making the surface position of the second wiring pattern 22b inside the printed circuit substrate 3 based on the thick copper component 14 equal to the surface position of the semiconductor chips 1 and 2. In addition, when the high-frequency circuit mounted on the semiconductor device 50 is not complex, the number of layers of the multi-layer printed circuit substrate 3 can also be appropriately selected. Figure 7 , an example is shown in which the number of layers of the multi-layer printed circuit substrate 3 is selected to be 2, that is, a double-layer printed circuit substrate 3 is used and the surface position of the second wiring pattern 22b inside the printed circuit substrate 3 based on the thick copper component 14 is equal to the surface position of the semiconductor chips 1 and 2.

[0055] In addition, the step-shaped opening 29 may be formed by appropriately selecting the wiring pattern (second wiring pattern 22b) inside the printed circuit board 3 exposed through the opening 29, and the three methods described in the third embodiment. Another method for making the surface position of the second wiring pattern 22b equal to the surface position of the semiconductor chips 1 and 2 based on the thick copper component 14 is described. The first method is a method of reducing the thickness of the printed circuit board 3 and appropriately selecting the wiring pattern (second wiring pattern 22b) inside the printed circuit board 3 exposed through the opening 29 to make the surface position of the second wiring pattern 22b equal to the surface position of the semiconductor chips 1 and 2 based on the thick copper component 14. For example, the thickness of the printed circuit board 3 can be changed by selecting the dielectric constant of the resin base material 23 of the printed circuit board 3. In addition, the thickness of the first wiring patterns 22a and 22b can also be changed. The second method is a method of making the surface position of the second wiring pattern 22b based on the thick copper member 14 equal to the surface position of the semiconductor chips 1 and 2 by thickening the semiconductor chips 1 and 2 and appropriately selecting the wiring pattern (second wiring pattern 22b) inside the printed circuit board 3 exposed through the opening 29 to form a stepped opening 29. The third method is a method of making the surface position of the second wiring pattern 22b based on the thick copper member 14 equal to the surface position of the semiconductor chips 1 and 2 by using the first method and the second method together.

[0056] In the example where the height of the second wiring pattern 22b exposed through the opening 29 formed in a step shape with respect to the thick copper member 14 is equal to the height of the semiconductor chips 1 and 2 with respect to the thick copper member 14, the length of the metal wire 12 connecting the second wiring pattern 22b of the printed circuit board 3 and the semiconductor chips 1 and 2 can be formed to be the shortest. However, as long as the height of the second wiring pattern 22b exposed through the opening 29 formed in a step shape with respect to the thick copper member 14 is -10% to +10% of the height of the semiconductor chips 1 and 2 with respect to the thick copper member 14, the second wiring pattern 22b can be connected to the semiconductor chips 1 and 2 by the metal wire 12 of a sufficiently short length.

[0057] The high-frequency circuit formed on the printed circuit board 3 includes a metal wire 12 that connects the semiconductor chip 1 formed with active elements, the semiconductor chip 2 formed with passive elements, and the wiring pattern. If the length of the metal wire 12 can be shortened, the structure of the high-frequency circuit formed after the connection process of the metal wire 12 can be made free. In other words, the adjustment of the high-frequency circuit can be made easy. If the metal wire 12 is longer than necessary, it is necessary to form a circuit for offsetting the unnecessary length after the connection process of the metal wire 12, so that the adjustment of the high-frequency circuit becomes complicated and the adjustment work becomes longer, thereby reducing productivity.

[0058] The semiconductor device 50 of the fourth embodiment exposes the wiring pattern (second wiring pattern 22b) inside the printed circuit board 3 of the multilayer structure through the stepped opening 29, and shortens the line length of the metal wire 12 connecting the exposed second wiring pattern 22b to the semiconductor chips 1 and 2, thereby improving the degree of freedom of the structure of the high-frequency circuit, that is, the degree of freedom of design of the high-frequency circuit. In addition, the semiconductor device 50 of the fourth embodiment can suppress the deviation of the high-frequency characteristics caused by the deviation of the line length by forming the metal wire 12 with a short line length. Since the semiconductor device 50 of the fourth embodiment has the structure of the semiconductor device 50 of the first embodiment, it has the same effect as the semiconductor device 50 of the first embodiment.

[0059] Implementation method 5

[0060] Figure 8 It is a schematic diagram of a cross section of a semiconductor device according to a fifth embodiment. Fig. 9 Yes means Figure 8 A diagram of the first example of a connected component, Fig.10 yes Figure 8 FIG. 4 is a diagram of a second example of a connected component. Fig.11 Yes means Figure 8The semiconductor device 50 of the fifth embodiment differs from the semiconductor device 50 of the first embodiment in that the semiconductor device 50 includes a first printed circuit substrate (front side printed circuit substrate) 3a disposed on the front side of the thick copper member 14 (the mounting surface side of the semiconductor chips 1 and 2), and a second printed circuit substrate (back side printed circuit substrate) 3b disposed on the back side of the thick copper member 14 (the surface opposite to the mounting surface of the semiconductor chips 1 and 2). The semiconductor device 50 of the fifth embodiment is Figure 1 In addition to the structure shown, a second printed circuit board 3 b is further arranged on the back side of the thick copper member 14 .

[0061] The semiconductor device 50 of the fifth embodiment includes a first printed circuit board 3a, a second printed circuit board 3b, semiconductor chips 1 and 2, an electronic component 4, a thick copper component 14 formed on the back side of the first printed circuit board 3a, and a cover 10 that seals the semiconductor chips 1 and 2, the electronic component 4, and the surface (the surface opposite to the back side) of the first printed circuit board 3a. The semiconductor chips 1 and 2 are directly mounted on the surface (the surface opposite to the first printed circuit board 3a) of the thick copper component 14 exposed through the opening 29 of the first printed circuit board 3a through the patch material 8. The first printed circuit board 3a is the same as the printed circuit board 3 described in the first embodiment. The second printed circuit board 3b is different from the first printed circuit board 3a in that the opening 29 is not formed. Since the opening 29 of the first printed circuit board 3a is formed in the opening forming step, the structure and manufacturing method of the second printed circuit board 3b are the same except for the opening 29. The thick copper member 14 of the fifth embodiment is different from the first embodiment in that it is disposed inside the semiconductor device 50 and is not exposed, and therefore no external electrode terminals 5 and 6 are formed. The external electrode terminals 5 and 6 are not formed on the thick copper member 14 but on the wiring pattern (first wiring pattern 22a) on the exposed surface of the second printed circuit board 3b.

[0062] exist Figure 8, printed circuit boards 3a and 3b having two layers of wiring patterns 21 (first wiring pattern 22a and second wiring pattern 22b) are shown. The wiring pattern on the exposed surface side (the side opposite to the thick copper component 14) of the printed circuit board 3a is the first wiring pattern 22a, and the wiring pattern formed in the inner layer inside the printed circuit board 3 is the second wiring pattern 22b. The wiring pattern on the exposed surface side (the side opposite to the thick copper component 14) of the printed circuit board 3b is the first wiring pattern 22a, and the wiring pattern formed in the inner layer inside the printed circuit board 3 is the second wiring pattern 22b. The first wiring pattern 22a and the second wiring pattern 22b are patterned by a plurality of wirings 25, and constitute a part of a high-frequency circuit mounted on a semiconductor device 50. The layers (first wiring pattern 22a and second wiring pattern 22b) of the printed circuit boards 3a and 3b are connected by vias 7 filled with copper in through-holes 27, i.e., conductive vias 7. In order to improve the heat dissipation of the printed circuit boards 3a and 3b, the second wiring pattern 22b of the inner layer in the printed circuit boards 3a and 3b is partially connected to the thick copper component 14 through the via hole 7 filled with copper in the through hole 27. The high-frequency circuits of the printed circuit boards 3a and 3b are connected via the conductive connecting component 19 filled in the through hole 13 formed in the thick copper component 14 or the resin 15 arranged on the outer peripheral side of the thick copper component 14.

[0063] The through hole 13 is usually filled with the resin (resin base material 23) of the printed circuit board 3 arranged on the front and back surfaces of the thick member. Figure 8 As shown, when the thickness of the thick copper component 14 is greater than the thickness of the two printed circuit boards 3a and 3b, it cannot be filled with the resin (resin base material 23) of the printed circuit boards 3a and 3b on the front and back sides. In this case, the filling of the through hole 13 with resin usually requires an additional step of embedding the filling component in the through hole 13 before connecting the resin base material 23 of the printed circuit boards 3a and 3b on the front and back sides. Fig. 9 , Fig.10 The connection member 19 as the filling member filled in the through-hole 13 will be described.

[0064] Fig. 9 The illustrated first connection member 19 includes an insulating resin 16 formed on the inner surface of the through hole 13 , a metal 17 formed on the inner surface of the resin 16 , and a conductive resin 18 formed on the inner surface of the metal 17 . Fig.10The second connecting member 19 shown includes an insulating resin 16 formed on the inner surface of the through hole 13, a metal 17 formed on the inner surface of the resin 16, and an insulating resin 16 formed on the inner surface of the metal 17. The method for forming the first connecting member 19 is described. First, the inner surface of the through hole 13 is filled with the insulating resin 16, and a through hole is formed therein. A layer of the metal 17 is formed on the inner surface of the through hole by electroplating or the like, and the inner surface of the metal 17 is filled with a conductive resin 18. The method for forming the second connecting member 19 is the same as the method for forming the first connecting member 19. However, the method for forming the second connecting member 19 is different from the method for forming the first connecting member 19 in that the inner surface of the metal 17 is filled with the insulating resin 16.

[0065] In the semiconductor device 50 of the fifth embodiment, the external electrode terminals 5 and 6 are not formed on the thick copper member 14 but are formed on the wiring pattern (first wiring pattern 22a) of the exposed surface of the second printed circuit board 3b. Fig.11 As shown, the external electrode terminals 5 and 6 are formed by the patterned wiring pattern (first wiring pattern 22a). The external electrode terminal 5 is an external electrode terminal connected to the thick copper component 14 on which the semiconductor chips 1 and 2 are mounted, and the external electrode terminal 6 is an external electrode terminal arranged on the outer peripheral side of the external electrode terminal 5. Figure 8 , an example is shown in which the external electrode terminal 5 is connected to the thick copper component 14 via the via hole 7, the second wiring pattern 22b of the second printed circuit board 3b, and the via hole 7. In addition, an example is shown in which the external electrode terminal 6 is connected to the second wiring pattern 22b of the first printed circuit board 3a via the via hole 7, the second wiring pattern 22b of the second printed circuit board 3b, and the connecting component 19 filled in the through hole 13. For the semiconductor device 50 of the fifth embodiment, since the external electrode terminals 5 and 6 on the back side of the semiconductor device can be formed by the wiring pattern (first wiring pattern 22a) on the exposed surface of the printed circuit board 3b, the electrodes on the back side of the semiconductor device 50 can be laid out and designed according to the structural device (installation target device) such as the wireless communication system in which the semiconductor device is installed. That is, the semiconductor device 50 of the fifth embodiment can increase the degree of freedom in designing the electrode pattern on the back side. In addition, the semiconductor device 50 of the fifth embodiment has high heat dissipation performance because the semiconductor chips 1 and 2 are directly mounted on the surface of the thick copper member 14 exposed through the opening 29 of the first printed circuit board 3a by the patch material 8, and the thick copper member 14 is connected to the external electrode terminal 5 on the back side of the semiconductor device. That is, even if the semiconductor device 50 of the fifth embodiment has a plurality of multilayer substrates, high heat dissipation performance can be ensured because the thick copper member 14 on which the semiconductor chips 1 and 2 are directly mounted is connected to the external electrode terminal 5 on the back side of the semiconductor device.

[0066] In the semiconductor device 50 of the first embodiment, since the external electrode terminals 5 and 6 are formed by the thick copper member 14, the processing accuracy is limited by the thickness of the thick copper member 14 when etching the external electrode terminals 5 and 6. In this case, the wiring pattern of the mounting target device on which the semiconductor device 50 is mounted is also restricted by the processing accuracy of the external electrode terminals 5 and 6, so there is sometimes a disadvantage that the wiring pattern of the mounting target device needs to be enlarged. However, the semiconductor device 50 of the fifth embodiment adopts the structure shown in the fifth embodiment, and the pattern of the external electrode terminals 5 and 6 on the back of the semiconductor device can be laid out according to the wiring pattern of the mounting target device. In addition, in the semiconductor device 50 of the fifth embodiment, the external electrode terminal 5 (electrode terminal connected to the ground line) on the back of the semiconductor device is connected to the thick copper member 14 through the through hole 7 filled with copper in the through hole 27 and the second wiring pattern 22b of the second printed circuit board 3b, so that high heat dissipation can be achieved.

[0067] Compared with the case where the external electrode terminals 5 and 6 are formed by the thick copper component 14, the semiconductor device 50 of the fifth embodiment has the external electrode terminals 5 and 6 on the back side formed by the second wiring pattern 22b of the printed circuit board 3b, so the pattern layout of the external electrode terminals 5 and 6 on the back side has a greater degree of freedom, so that the size and position of the external electrode terminals 5 and 6 can be designed according to the layout of the wiring pattern of the installation target device. Since the semiconductor device 50 of the fifth embodiment can increase the degree of freedom in the design of the installation target device, it is possible to perform effective heat dissipation design in the installation target device. The semiconductor device 50 of the fifth embodiment has the thick copper component 14 in the same manner as the semiconductor device 50 of the first embodiment, and the thick copper component 14 on which the semiconductor chips 1 and 2 are directly mounted is connected to the external electrode terminals 5 on the back side of the semiconductor device, so that the same effect as the semiconductor device 50 of the first embodiment is achieved.

[0068] As described above, the semiconductor device 50 of the fifth embodiment is a semiconductor device in which a plurality of external electrode terminals 5 and 6 connected to a mounting target device are formed on the back surface and a semiconductor chip 1 for processing high-frequency signals is mounted. The semiconductor device 50 of the fifth embodiment includes a thick copper member 14 on which the semiconductor chip 1 is mounted, a printed circuit board (front side printed circuit board) 3a arranged on the surface of the thick copper member 14, and another printed circuit board 3b, i.e., a back side printed circuit board, arranged on the back surface of the thick copper member 14. The printed circuit board 3a includes an opening 29 that exposes a portion of the surface of the thick copper member 14, a wiring pattern 21, and a conductive via 7 that connects the wiring pattern 21 to the thick copper member 14. The other printed circuit board (back side printed circuit board) 3b is a printed circuit board that includes another wiring pattern 21 and another conductive via 7 that connects the other wiring pattern 21 to the thick copper member 14, and is a printed circuit board in which the plurality of external electrode terminals 5 and 6 are formed by the other wiring pattern 21 formed so as to be exposed on the side opposite to the thick copper member 14. The semiconductor device 50 of the fifth embodiment further comprises: a conductive connection member 19 for connecting a wiring pattern 21 to another wiring pattern 21; a semiconductor chip 1 mounted on the surface of the thick copper member 14 exposed through the opening 29 and connected to the wiring pattern 21 through the metal wire 12; an electronic component 4 mounted on the surface of the printed circuit board 3 opposite to the thick copper member 14 and connected to the wiring pattern 21; and a cover 10 or epoxy resin 28 for sealing the surface of the printed circuit board 3 opposite to the thick copper member 14, the semiconductor chip 1, the electronic component 4, and the metal wire 12. The semiconductor device 50 of the fifth embodiment has such a structure that the semiconductor chip 1 is mounted on the surface of the thick copper member 14 exposed through the opening 29 formed in the printed circuit board 3, and the back surface of the thick copper member 14 is connected to the exposed external electrode terminals 5 and 6, so that even if a complex high-frequency circuit is mounted, high heat dissipation can be maintained.

[0069] Implementation 6

[0070] Fig.12It is a schematic diagram of the cross section of the semiconductor device involved in the sixth embodiment. The semiconductor device 50 of the sixth embodiment is different from the semiconductor device 50 of the fifth embodiment in that the second printed circuit substrate 3b has an opening 29 formed in a manner to include the area directly below the semiconductor chip 1, and a copper layer 24 filling the opening 29. The second printed circuit substrate 3b, which is arranged on the back side of the thick copper component 14 (the side opposite to the mounting surface of the semiconductor chips 1 and 2), has an opening 29 formed in a manner to include the area directly below the semiconductor chip 1 in which the active element is formed. That is, the opening 29 formed in the second printed circuit substrate 3b is formed to include a position symmetrical to the area on which the semiconductor chip 1 is mounted with respect to the thick copper component 14, that is, a semiconductor chip symmetrical area. The copper layer 24 is formed to fill the opening 29 formed in the second printed circuit substrate 3b, that is, it is arranged to cover a position symmetrical to the area on which the semiconductor chip 1 is mounted with respect to the thick copper component 14, that is, a semiconductor chip symmetrical area. In Fig.12 , an example is shown in which the opening 29 of the second printed circuit substrate 3b is formed in a wider range than the opening 29 formed in the first printed circuit substrate 3a. The opening 29 of the second printed circuit substrate 3b is formed in the opening forming step of the second printed circuit substrate 3b. In the opening forming step of the second printed circuit substrate 3b, before forming the first wiring pattern 22a on the outermost surface (exposed surface on the back side), the opening 29 that reaches the thick copper component 14 is formed by laser or drilling. Thereafter, the copper layer 24 is grown in the opening 29 by electroplating, for example, to be coplanar with the resin substrate 23 before the formation of the first wiring pattern 22a. The first wiring pattern 22a is formed on the exposed surface of the resin substrate 23 and the copper layer 24 (external electrode terminal forming step). The external electrode terminals 5 and 6 are formed on the first wiring pattern 22a on the exposed surface of the second printed circuit substrate 3b.

[0071] exist Fig.12 In the figure, an example is shown in which the external electrode terminal 5 is connected to the thick copper component 14 through two connection paths. The first connection path is the same as that of the fifth embodiment, and is a path through the through hole 7 filled with copper in the through hole 27 and the second wiring pattern 22b of the second printed circuit substrate 3b. The second connection path is a path through the copper layer 24. The semiconductor device 50 of the sixth embodiment directly mounts the semiconductor chips 1 and 2 on the surface of the thick copper component 14 exposed through the opening 29 of the first printed circuit substrate 3a through the patch material 8, and connects the thick copper component 14 to the external electrode terminal 5 on the back side of the semiconductor device through two connection paths, so that it has high heat dissipation. That is, even if the semiconductor device 50 of the sixth embodiment has a plurality of multilayer substrates, it is possible to ensure high heat dissipation because the thick copper component 14 on which the semiconductor chips 1 and 2 are directly mounted is connected to the external electrode terminal 5 on the back side of the semiconductor device.

[0072] The semiconductor device 5 of the fifth embodiment connects the external electrode terminal 5 which is not thick copper to the thick copper member 14 via the via hole 7 filled with copper in the through hole 27 and the second wiring pattern 22b of the second printed circuit board 3b. Therefore, compared with the case where the external electrode terminal 5 is formed by the thick copper member 14, if the heat generated by the semiconductor chip 1 formed with the active element becomes larger, the heat dissipation performance may be deteriorated. However, the semiconductor device 50 of the sixth embodiment forms the opening 29 in the second printed circuit board 3b arranged on the back side (the side opposite to the mounting surface of the semiconductor chips 1 and 2) of the thick copper member 14 so as to include the area directly below the semiconductor chip 1 formed with the active element, and connects the thick copper member 14 to the external electrode terminal 5 via the copper layer 24 filling the opening 29. Therefore, compared with the semiconductor device 50 of the fifth embodiment, the heat dissipation performance can be improved, and the heat dissipation performance equivalent to the case where the external electrode terminal 5 is formed by the thick copper member 14 can be ensured.

[0073] The semiconductor device 50 of the sixth embodiment achieves the same heat dissipation as when the external electrode terminals 5 are formed of the thick copper member 14, and similarly to the semiconductor device 50 of the fifth embodiment, the degree of freedom in the pattern layout of the external electrode terminals 5 and 6 on the back surface is increased, so that the size and position of the external electrode terminals 5 and 6 can be designed according to the layout of the wiring pattern of the device to be installed. Since the semiconductor device 50 of the sixth embodiment can increase the degree of freedom in the design of the device to be installed, effective heat dissipation design can be performed in the device to be installed. The semiconductor device 50 of the sixth embodiment has the thick copper member 14 similarly to the semiconductor device 50 of the first embodiment, and the thick copper member 14 on which the semiconductor chips 1 and 2 are directly mounted is connected to the external electrode terminals 5 on the back surface of the semiconductor device, thereby achieving the same effect as the semiconductor device 50 of the first embodiment.

[0074] In the first to sixth embodiments, the examples in which the passive elements of a part of the high-frequency circuit are formed on the semiconductor chip 2 are described. However, it is also possible to Fig.13 As shown, a ceramic substrate on which passive elements are formed is mounted on the surface of the external electrode terminal 5 exposed through the opening 29 . Fig.13 Schematic diagram of a cross section of a semiconductor device equipped with a semiconductor chip and a ceramic substrate. Fig.13 In the figure, it is shown that Figure 1 The semiconductor chip 2 is changed to an example of a ceramic substrate 32. The ceramic substrate 32 is mounted on the surface of the external electrode terminal 5 exposed through the opening 29 by an adhesive member 33.

[0075] In addition, the semiconductor device 50 of embodiments 1 to 6 may also be equipped with a semiconductor element that outputs less than 1W of power. Even if a semiconductor element that outputs less than 1W of power is installed and resin-sealed, high heat dissipation can be maintained. In addition, the present application describes various illustrative embodiments and examples, but the various features, forms, and functions described in one or more embodiments are not limited to the application of a specific embodiment, and can be applied to the embodiment alone or in various combinations. Therefore, countless variations that are not exemplified can be imagined within the technical scope disclosed in the specification of this application. For example, it includes the case where at least one structural element is deformed, added, or omitted, and it also includes the case where at least one structural element is extracted and combined with structural elements of other embodiments.

[0076] Description of Reference Numerals

[0077] 1…semiconductor chip; 2…semiconductor chip; 3…printed circuit board; 3a…printed circuit board; 3b…printed circuit board (back side printed circuit board); 4…electronic component; 5…external electrode terminal; 6…external electrode terminal; 7…through hole; 10…cover; 11…recess; 12…metal wire; 14…thick copper component; 16…resin; 17…metal (metal layer); 18…conductive resin; 19…connecting component; 21…wiring pattern; 22a…first wiring pattern; 22b…second wiring pattern; 24…copper layer; 28…epoxy resin; 29…opening; 32…ceramic substrate; 50…semiconductor device.

Claims

1. A semiconductor device having a plurality of external electrode terminals connected to a mounting target device to be mounted formed on the back surface and having a semiconductor chip for processing high-frequency signals mounted thereon, characterized in that: The semiconductor device comprises: a thick copper component on which the semiconductor chip is mounted; a printed circuit board disposed on the surface of the thick copper member and comprising an opening for exposing a portion of the surface of the thick copper member, a wiring pattern, and a conductive via connecting the wiring pattern and the thick copper member; A back side printed circuit board is another printed circuit board arranged on the back side of the thick copper component and having another wiring pattern and another conductive through hole connecting the other wiring pattern and the thick copper component, and the plurality of external electrode terminals are constituted by the other wiring pattern formed in a manner exposed to the side opposite to the thick copper component; a conductive connection member connecting the wiring pattern to the other wiring pattern; The semiconductor chip is mounted on the surface of the thick copper member exposed by the opening and connected to the wiring pattern through a metal wire; an electronic component mounted on a surface of the printed circuit board that is opposite to the thick copper component and connected to the wiring pattern; as well as A cover or epoxy resin is used to seal the surface of the printed circuit board opposite to the thick copper component, the semiconductor chip, the electronic component, and the metal wire. The back side printed circuit board includes a copper layer connecting one of the external electrode terminals formed on the surface opposite to the thick copper member to the back side of the thick copper member. The copper layer is formed so as to fill the opening formed in the back side printed circuit board so as to include a semiconductor chip symmetric region which is a position symmetric to a region where the semiconductor chip is mounted with reference to the thick copper member.

2. The semiconductor device according to claim 1, wherein: The connection member includes an insulating resin formed on the outer peripheral side, a metal layer formed on the inner side of the resin, and a conductive resin formed on the inner side of the metal layer.

3. The semiconductor device according to claim 1, wherein: The connection member includes an insulating resin formed on the outer peripheral side, a metal layer formed on the inner side of the resin, and an insulating resin formed on the inner side of the metal layer.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that The printed circuit board has a recessed portion on a side surface of the opening.

5. The semiconductor device according to any one of claims 1 to 3, characterized in that The wiring pattern formed on the surface of the printed circuit board opposite to the thick copper member has a height based on the thick copper member that is -10% to +10% of the height of the semiconductor chip based on the thick copper member.

6. The semiconductor device according to any one of claims 1 to 3, characterized in that The printed circuit substrate is a multi-layer printed circuit substrate, The opening of the printed circuit board is formed in a step-like shape so as to expose a part of the wiring pattern formed inside. The height of the wiring pattern exposed through the opening, with respect to the thick copper member, is -10% to +10% of the height of the semiconductor chip with respect to the thick copper member.

7. The semiconductor device according to any one of claims 1 to 3, characterized in that The semiconductor chip is formed with active elements, The semiconductor device further includes another semiconductor chip or a ceramic substrate on which passive elements are formed. The other semiconductor chip or the ceramic substrate is mounted on the surface of the thick copper member exposed by the opening, and is connected to the wiring pattern and the semiconductor chip through a metal wire. The other semiconductor chip or the ceramic substrate is sealed by the cover or epoxy resin.

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