Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a mask member configured to surround the periphery of a substrate held by a rotary holding portion; a collection member disposed in an exhaust path between the mask member and the rotary holding portion; and a solvent supply portion disposed above the collection member and configured to supply a solvent to the collection member. The solvent supply portion includes: an inner storage chamber configured to surround the periphery of the substrate when viewed from above; an outer storage chamber configured to surround the periphery of the inner storage chamber when viewed from above; and a partition wall extending in a circumferential direction so as to divide the inner storage chamber and the outer storage chamber. A plurality of communication holes are formed through the partition wall such that the solvent introduced into the outer storage chamber can flow into the inner storage chamber. A plurality of dripping holes are formed through the bottom wall of the inner storage chamber such that the solvent in the inner storage chamber can drip onto the collection member. The present invention can effectively remove cotton-like masses.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus. Background Art

[0002] In Patent Document 1, there is disclosed a substrate processing apparatus including: an annular mask member configured to face a peripheral portion of a substrate held by a rotary holding portion; and a collecting member disposed in an exhaust path between the rotary holding portion and the mask member.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Utility Model Registration No. 3175893 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] In recent years, in the manufacture of MEMS (Micro-Electro-Mechanical Systems) and the like, in order to perform three-dimensional processing of a substrate, a relatively thick resist film (resist thick film) having a film thickness of, for example, about 5 μm to 60 μm may be formed on the surface of the substrate. As a material for the resist thick film, for example, a coating liquid (e.g., polyimide) having a high viscosity and being difficult to flow on the substrate surface can be used. The viscosity of such a coating liquid is, for example, 2000 cP or more.

[0008] When this coating liquid is dropped onto the substrate surface and spin-coated while the substrate is rotated at a certain degree of high speed, the coating liquid is coated on the entire surface of the substrate, and the uniformity of the thickness of the coating film is improved. However, a lot of the coating liquid is thrown out from the outer peripheral edge of the substrate, so it is difficult to form a coating film having a desired thickness.

[0009] On the other hand, when, in order to obtain a thicker resist film, this coating liquid is dropped onto the substrate surface and spin-coated while the substrate is rotated at a certain degree of low speed, a part of the coating film is thrown out from the outer peripheral edge of the substrate. Since the viscosity of the coating liquid is high, the coating film thrown out from the outer peripheral edge of the substrate extends linearly from the outer peripheral edge, forming a linear portion extending radially outward from the outer peripheral edge. In this process, the coating film and the linear portion gradually dry and gel. The gelled linear portion drops downward below the substrate and is entangled with each other to form a cotton-like mass (hereinafter, referred to as "cotton-like mass").

[0010] In the apparatus of Patent Document 1, the cotton-like lumps generated during the spin coating process can be collected by the collection member. Therefore, there are sometimes cases where the cotton-like lumps narrow the flow path area of the exhaust path, making it difficult to exhaust at a set exhaust pressure. In order to remove the cotton-like lumps, it is considered to supply a solvent to the collection member after the spin coating process. In this case, since the process of removing the cotton-like lumps takes time, the processing efficiency (productivity) of the substrate may decrease.

[0011] Then, the present invention describes a substrate processing apparatus capable of effectively removing cotton-like lumps.

[0012] Technical solutions for solving technical problems

[0013] A substrate processing apparatus according to an aspect of the present invention includes: a holding unit configured to hold a substrate and rotate it; a coating liquid supply unit configured to supply a coating liquid to the substrate; a mask member disposed to surround the periphery of the substrate held by the rotary holding unit; a collection member disposed in the exhaust path between the mask member and the rotary holding unit; and a solvent supply unit disposed above the collection member and configured to supply a solvent to the collection member. The solvent supply unit includes: an inner storage chamber configured to surround the periphery of the substrate when viewed from above; an outer storage chamber configured to surround the periphery of the inner storage chamber when viewed from above; and a partition wall extending in the circumferential direction of the substrate so as to divide the inner storage chamber and the outer storage chamber. A plurality of dripping holes arranged at a predetermined interval in the circumferential direction are formed in the inner storage chamber. An introduction hole for introducing the solvent is formed in the outer storage chamber. A plurality of communication holes arranged at a predetermined interval in the circumferential direction are formed in the partition wall. The plurality of communication holes are formed to penetrate the partition wall so that the solvent introduced into the outer storage chamber can flow into the inner storage chamber. The plurality of dripping holes are formed to penetrate the bottom wall of the inner storage chamber so that the solvent in the inner storage chamber can drip onto the collection member.

[0014] Advantages of the invention

[0015] The substrate processing apparatus according to the present invention can effectively remove cotton-like lumps. Description of the drawings

[0016] Figure 1 is a perspective view showing an example of a substrate processing system.

[0017] Figure 2 is along Figure 1 a sectional view taken along line II-II of.

[0018] Figure 3 is a top view showing an example of a processing module.

[0019] Figure 4 is a schematic view showing an example of a liquid processing unit.

[0020] Figure 5 It is a perspective view showing a partial cutaway of the release member.

[0021] Figure 6 It is a vertical sectional view showing an example of the release member.

[0022] Figure 7 It is a top view showing an example of the collection member.

[0023] Figure 8 It is a block diagram showing an example of the main part of the substrate processing system.

[0024] Figure 9 It is a schematic diagram showing an example of the hardware configuration of the controller.

[0025] Figure 10 It is a flowchart for explaining the wafer processing steps.

[0026] Figure 11 It is a vertical sectional view showing another example of the release member.

[0027] Figure 12 It is a vertical sectional view showing another example of the release member.

[0028] Explanation of Reference Numerals

[0029] 1... Substrate processing system, 2... Coating and developing apparatus (substrate processing apparatus), 20... Rotating holding part, 30... Mask member, 40... Coating liquid supply part, 50, 60... Solvent supply part (other solvent supply parts), 70... Solvent supply part, 80... Collection member, 90... Sensor, 100... Release member, 102... Outer peripheral wall, 104... Inner peripheral wall, 106... Bottom wall, 108... Top wall, 110... Partition wall, 112... Introduction hole, 114... Communication hole, 116... Dripping hole, 118... Protruding member, 122... Introduction hole (other introduction hole), 124... Communication hole (other communication hole), 126... Dripping hole (other dripping hole), 128... Protruding member (other protruding member), CH... Path (exhaust path), Ctr... Controller (control part), U1... Liquid processing unit (substrate processing apparatus), V1... Outer storage chamber, V2... Inner storage chamber, V11... Outer storage chamber (other outer storage chamber), V12... Inner storage chamber (other inner storage chamber), W... Wafer (substrate). Detailed Description of the Invention

[0030] Next, with reference to the accompanying drawings, an example of an embodiment of the present invention will be described in more detail. In the following description, the same reference numerals are used for the same elements or elements having the same functions, and repeated descriptions are omitted.

[0031] [Substrate Processing System]

[0032] As shown in Figure 1 and Figure 2 FIGS., the substrate processing system 1 includes a coating / developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller Ctr (control unit).

[0033] The exposure apparatus 3 performs an exposure process (pattern exposure) on a resist film formed on the surface of a wafer W (substrate). The exposure apparatus 3 can also selectively irradiate an energy ray onto an exposure target portion of the resist film (photo-curable film) by, for example, immersion exposure or other methods.

[0034] As the energy ray, for example, ionizing radiation and non-ionizing radiation can be cited. Ionizing radiation is radiation having sufficient energy to ionize an atom or a molecule. As the ionizing radiation, for example, extreme ultraviolet (EUV), electron beam, ion beam, X-ray, α-ray, β-ray, γ-ray, heavy particle beam, and proton beam can be cited. Non-ionizing radiation is radiation that does not have sufficient energy to ionize an atom or a molecule. As the non-ionizing radiation, for example, g-line, i-line, KrF excimer laser, ArF excimer laser, and F2 excimer laser can be cited.

[0035] The coating / developing apparatus 2 is configured to be able to perform a process of forming a resist film on the surface of the wafer W before the exposure process performed by the exposure apparatus 3, and a process of developing the resist film after the exposure process. The wafer W can be in a disk shape, a part of a circle can be cut off, or it can be in a shape different from a circle such as a polygon. The wafer W can be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (flat panel display) substrate, or various other substrates. The diameter of the wafer W can be, for example, on the order of 200 mm to 450 mm.

[0036] As shown in Figures 1 to 3 FIGS., the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

[0037] As shown in Figure 1 and Figure 3As shown, the carrier block 4 has a carrier station 12 and a loading / unloading section 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 houses at least one wafer W in a sealed state. On the side surface 11a of the carrier 11, a switch door (not shown) for loading / unloading the wafer W is provided. The carrier 11 is detachably provided on the carrier station 12 with the side surface 11a facing the loading / unloading section 13 side.

[0038] The loading / unloading section 13 is located between the carrier station 12 and the processing block 5. The loading / unloading section 13 has a plurality of switch doors 13a. When the carrier 11 is placed on the carrier station 12, the switch door of the carrier 11 is in a state facing the switch door 13a. By simultaneously opening the switch door 13a and the switch door on the side surface 11a, the inside of the carrier 11 communicates with the inside of the loading / unloading section 13. A transfer arm A1 is built in the loading / unloading section 13. The transfer arm A1 is configured to be able to take out the wafer W from the carrier 11 and transfer it to the processing block 5, receive the wafer W from the processing block 5 and send it back into the carrier 11.

[0039] As Figures 1 to 3 shown, the processing block 5 has processing modules PM1 to PM4. These processing modules can be arranged, for example, in the order of processing module PM4, processing module PM1, processing module PM2, and processing module PM3 from the floor side.

[0040] The processing module PM1 is configured to be able to form a base film on the surface of the wafer W and is also called a BCT module. As Figure 2 and Figure 3 shown, the processing module PM1 houses a plurality of units U11, U21 and a transfer arm A2 for transferring the wafer W to these units U11, U21. The unit U11 is configured to be able to apply a coating liquid for forming a base film on the wafer W, for example. The unit U21 is configured to be able to perform heat treatment to cure the coating film formed on the wafer W by the unit U11 to form a base film. As the base film, for example, an antireflection (SiARC) film can be cited.

[0041] The processing module PM2 is configured to form an intermediate film (hard mask) on the base film and is also called an HMCT module. As Figure 2 and Figure 3 shown, the processing module PM2 houses a plurality of units U12, U22 and a transfer arm A3 for transferring the wafer W to these units U12, U22. The unit U12 is configured to be able to apply a coating liquid for forming an intermediate film to the wafer W. The unit U22 is configured to be able to perform heat treatment to cure the coating film formed on the wafer W by the unit U12 to form an intermediate film. As the intermediate film, for example, a SOC (spin on carbon) film and an amorphous carbon film can be cited.

[0042] The processing module PM3 is configured to be able to form a resist film having thermosetting and photosensitivity on the intermediate film, and is also referred to as the COT module. As Figure 2 and Figure 3 shown, the processing module PM3 incorporates a plurality of units U13, U23 and a transfer arm A4 for transferring the wafer W to these units U13, U23. The unit U13 is configured to be able to apply a coating liquid for forming a resist film onto the wafer W. The unit U23 is configured to be able to perform a heat treatment (PAB: Pre Applied Bake) to cure the coating film formed on the wafer W by the unit U13 to form a resist film.

[0043] The processing module PM4 is configured to be able to perform a development process on the exposed resist film, and is also referred to as the DEV module. As Figure 2 and Figure 3 shown, the processing module PM4 incorporates a plurality of units U14, U24 and a transfer arm A5 for transferring the wafer W to these units U14, U24. The processing module PM4 also incorporates a transfer arm A6 that directly transfers the wafer W between the shelf unit 14 and the shelf unit 15 (described later) without passing through these units U14, U24. The unit U14 is configured to be able to partially remove the resist film to form a resist pattern. This unit U24 is configured, for example, to be able to perform a heat treatment (PEB: Post Exposure Bake) before the development process, a heat treatment (PB: Post Bake) after the development process, etc.

[0044] Hereinafter, the units U11 to U14 are collectively referred to as the liquid processing unit U1 (substrate processing device), and the units U21 to U24 are collectively referred to as the heat treatment unit U2.

[0045] As Figure 2 and Figure 3 shown, the processing block 5 includes a shelf unit 14 on the side of the carrier block 4. The shelf unit 14 is provided from the ground to the processing module PM3 and is divided in the vertical direction into a plurality of compartments arranged side by side. A transfer arm A7 is provided near the shelf unit 14. The transfer arm A7 raises and lowers the wafer W between the compartments of the shelf unit 14.

[0046] The processing block 5 includes a shelf unit 15 at the interface block 6. The shelf unit 15 is provided from the ground to the upper part of the processing module PM4 and is divided in the vertical direction into a plurality of compartments arranged side by side.

[0047] The interface block 6 is internally provided with a transfer arm A8 and is connected to the exposure apparatus 3. The transfer arm A8 is configured to be able to take out the wafer W of the shelf unit 15 and transfer it to the exposure apparatus 3, receive the wafer W from the exposure apparatus 3, and send it back to the shelf unit 15.

[0048] The controller Ctr is composed of one or more control computers and is configured to be able to control the substrate processing system 1 partially or wholly.

[0049] [Structure of the liquid processing unit]

[0050] Next, with reference to Figures 4 to 7 , the liquid processing unit U1 will be described in more detail. As Figure 4 shown, the liquid processing unit U1 includes a rotation holding part 20, a mask member 30, a coating liquid supply part 40, a solvent supply part 50, 60, 70, a collection member 80, a sensor 90, and a blower B.

[0051] The rotation holding part 20 has a rotation part 21, a shaft 22, and a holding part 23. The rotation part 21 operates based on an operation signal from the controller Ctr to rotate the shaft 22. The rotation part 21 is a power source such as an electric motor. The holding part 23 is provided at the front end of the shaft 22. The wafer W can be placed on the holding part 23. The holding part 23 holds the wafer W substantially horizontally, for example, by adsorption. That is, the rotation holding part 20 is configured to be able to rotate the wafer W around a rotation axis Ax perpendicular to the front surface Wa of the wafer W in a state where the posture of the wafer W is substantially horizontal. Since the rotation axis Ax passes through the approximate center of the circular wafer W, it is also the central axis. As Figure 4 illustrated, it is also possible for the rotation holding part 20 to rotate the wafer W clockwise at a specified rotational speed when viewed from above.

[0052] The mask member 30 is provided around the rotation holding part 20. The mask member 30 functions as a liquid collection container and receives the liquid supplied to the wafer W for processing the wafer W. The mask member 30 includes a bottom wall 31, an outer peripheral wall 32, an inner peripheral wall 33, a partition wall 34, a drain pipe 35, an exhaust pipe 36, an inclined wall 37, and a partition wall 38.

[0053] The bottom wall 31 is in a circular ring shape surrounding the rotation holding part 20. The outer peripheral wall 32 is in a cylindrical shape surrounding the inner peripheral wall 33 and the inclined wall 37. The outer peripheral wall 32 extends vertically upward from the outer peripheral edge of the bottom wall 31. The outer peripheral wall 32 is located outside the peripheral edge of the wafer W held by the rotation holding part 20. Therefore, the outer peripheral wall 32 is configured to be able to prevent the liquid thrown off from the wafer W held and rotated by the rotation holding part 20 from scattering.

[0054] The inner peripheral wall 33 is cylindrical and surrounds the rotation holding portion 20. The inner peripheral wall 33 extends vertically upward from the inner peripheral edge of the bottom wall 31. The inner peripheral wall 33 is located inside the periphery of the wafer W held by the rotation holding portion 20. The upper end portion 33a of the inner peripheral wall 33 is closed by the partition wall 38. A through hole is formed in the central portion of the partition wall 38, and the shaft 22 is inserted through the through hole.

[0055] The partition wall 34 is cylindrical. The partition wall 34 is located between the outer peripheral wall 32 and the inner peripheral wall 33 and extends vertically upward from the bottom wall 31. That is, the partition wall 34 surrounds the inner peripheral wall 33. The upper end of the partition wall 34 is spaced from the inclined wall 37 located above the partition wall 34.

[0056] The inclined wall 37 is attached to the upper end portion 33a of the inner peripheral wall 33 so as to project to the outside of the partition wall 34. The inclined wall 37 is in the shape of an umbrella (mountain shape) protruding upward. That is, the inclined wall 37 has an inclined surface S that slopes downward as it goes outward in the radial direction of the rotation axis of the rotation holding portion 20. The inclined surface S faces the peripheral edge portion of the wafer W held by the rotation holding portion 20 in the vertical direction.

[0057] The drain pipe 35 is connected to the liquid discharge hole 31a formed in the bottom wall 31 between the outer peripheral wall 32 and the partition wall 34. The liquid slung off from the wafer W to the outside flows through the path CH between the outer peripheral wall 32 or the outer peripheral wall 102 (described later) and the inclined surface S (described later) of the inclined wall 37, is guided to between the outer peripheral wall 32 and the partition wall 34, and is discharged through the liquid discharge hole 31a and the drain pipe 35. That is, the path CH constitutes a drainage path.

[0058] The exhaust pipe 36 is connected to the discharge hole 31b formed in the portion of the bottom wall 31 between the partition wall 34 and the inner peripheral wall 33. The down flow flowing through the peripheral edge portion of the wafer W flows along the path CH, passes between the upper end portion of the partition wall 34 and the inclined wall 37, is guided to between the inner peripheral wall 33 and the partition wall 34, and is discharged through the gas discharge hole 31b and the exhaust pipe 36. That is, the path CH also constitutes an exhaust path.

[0059] The coating liquid supply unit 40 is configured to be able to supply the coating liquid L1 to the front surface Wa of the wafer W. Examples of the coating liquid L1 include a photoresist material for forming a photoresist film and a non-photoresist material for forming a non-photoresist film. In order to form a thick resist film R with a film thickness of, for example, about 5 μm to 60 μm, a material with a high viscosity of the coating liquid L1 and that is difficult for the coating liquid L1 to flow on the front surface Wa of the wafer W (for example, polyimide) can be used. The lower limit of the viscosity of the coating liquid L1 can be, for example, about 100 cP. The upper limit of the viscosity of the coating liquid L1 can be, for example, about 7000 cP, or can be 6000 cP, or can also be 5000 cP.

[0060] The coating liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle N1, a pipe 44, and a drive mechanism 45. The liquid source 41 is configured as a supply source of the coating liquid L1. The pump 42 is configured to be able to operate based on an operation signal from the controller Ctr, suck the coating liquid L1 from the liquid source 41, and send it to the nozzle N1 via the pipe 44 and the valve 43. The valve 43 is configured to be able to operate based on an operation signal from the controller Ctr, and open and close the pipe 44 before and after the valve 43.

[0061] The nozzle N1 is disposed above the wafer W such that the discharge port faces the front surface Wa of the wafer W. The nozzle N1 is configured to be able to discharge the coating liquid L1 sent from the pump 42 onto the front surface Wa of the wafer W. The pipe 44 is connected in sequence from the upstream side to the liquid source 41, the pump 42, the valve 43, and the nozzle N1. The drive mechanism 45 operates based on an operation signal from the controller Ctr, and moves the nozzle N1 in the horizontal direction and the vertical direction. The drive mechanism 45 is, for example, a servo motor with an encoder, and can also control the moving speed and the moving position of the nozzle N1.

[0062] The solvent supply unit 50 (other solvent supply unit) is configured to be able to supply the solvent L2 to the front surface Wa of the wafer W. The solvent L2 can also be various diluents.

[0063] The solvent supply unit 50 includes a liquid source 51, a pump 52, a valve 53, a nozzle N2, a pipe 54, and a drive mechanism 55. The liquid source 51 is configured as a supply source of the solvent L2. The pump 52 operates based on an operation signal from the controller Ctr, sucks the solvent L2 from the liquid source 51, and transports it to the nozzle N2 via the pipe 54 and the valve 53. The valve 53 is configured to be able to operate based on an operation signal from the controller Ctr, and open and close the pipe 54 before and after the valve 53.

[0064] The nozzle N2 is disposed above the wafer W such that the discharge port faces the front surface Wa of the wafer W. The nozzle N2 is configured to be able to discharge the solvent L2 transported from the pump 52 onto the front surface Wa of the wafer W. The pipe 54 is connected in sequence from the upstream side to the liquid source 51, the pump 52, the valve 53, and the nozzle N2. The drive mechanism 55 operates based on an operation signal from the controller Ctr, and moves the nozzle N2 in the horizontal direction and the vertical direction. The drive mechanism 55 is, for example, a servo motor with an encoder, and can also control the moving speed and the moving position of the nozzle N2.

[0065] The solvent supply unit 60 (other solvent supply unit) is configured to be able to supply the solvent L3 to the back surface Wb of the wafer W. The solvent L3 is, for example, various diluents, and can also be the same as the solvent L2.

[0066] The solvent supply unit 60 includes a liquid source 61, a pump 62, a valve 63, a nozzle N3, and a pipe 64. The liquid source 61 is configured as a supply source of the solvent L3. The pump 62 is configured to be able to operate based on an operation signal from the controller Ctr, suck the solvent L3 from the liquid source 61, and send it to the nozzle N3 via the pipe 64 and the valve 63. The valve 63 is configured to be able to operate based on an operation signal from the controller Ctr, and open and close the pipe 64 before and after the valve 63.

[0067] The nozzle N3 is disposed below the wafer W such that the discharge port faces the back surface Wb of the wafer W. More specifically, the discharge port of the nozzle N3 faces the outer peripheral edge side of the wafer W and obliquely upward. The nozzle N3 can discharge the solvent L3 sent from the pump 62 to the vicinity of the outer peripheral edge of the back surface Wb of the wafer W. The pipe 64 is connected in sequence from the upstream side to the liquid source 61, the pump 62, the valve 63, and the nozzle N3.

[0068] The solvent supply unit 70 is configured to be able to supply the solvent L4 to the collection member 80. The solvent L4 is, for example, various diluents, and may be the same as the solvent L2.

[0069] The solvent supply unit 70 includes a liquid source 71, a pump 72, a valve 73, a pipe 74, and a release member 100. The liquid source 71 is configured as a supply source of the solvent L4. The pump 72 is configured to be able to operate based on an operation signal from the controller Ctr, suck the solvent L4 from the liquid source 71, and send it to the release member 100 via the pipe 74 and the valve 73. The valve 73 is configured to be able to operate based on an operation signal from the controller Ctr, and open and close the pipe 74 before and after the valve 73.

[0070] The release member 100 is located above the mask member 30 (outer peripheral wall 32). The release member 100 is configured to surround the peripheral edge portion of the wafer W held by the rotation holding portion 20. The release member 100 may be cylindrical or substantially C-shaped. That is, the release member 100 may surround the entire peripheral edge portion of the wafer W held by the rotation holding portion 20, or may partially surround the peripheral edge portion of the wafer W held by the rotation holding portion 20.

[0071] As Figure 5 and Figure 6 shown, the release member 100 includes an outer peripheral wall 102, an inner peripheral wall 104, a bottom wall 106, a top wall 108, and a partition wall 110.

[0072] The outer peripheral wall 102 is configured to surround the inner peripheral wall 104, the bottom wall 106, the top wall 108, and the partition wall 110. The outer peripheral wall 102 may be cylindrical and extend in the vertical direction. The outer peripheral wall 102 may also be installed at the upper end portion of the mask member 30 (outer peripheral wall 32). The outer peripheral wall 102 may be integrally formed with the mask member 30 (outer peripheral wall 32), or may be separate from the mask member 30 (outer peripheral wall 32).

[0073] The inner peripheral wall 104 is configured to surround the outer peripheral edge of the wafer W held by the rotation holding unit 20. The inner peripheral wall 104 may also be in the shape of a cylinder extending in the vertical direction.

[0074] The bottom wall 106 is configured to connect the outer peripheral wall 102 and the inner peripheral wall 104. The bottom wall 106 may also extend obliquely upward as it goes from the outer peripheral wall 102 to the inner peripheral wall 104. The bottom wall 106 may be in an annular shape (ring shape). The bottom wall 106 may be integrally formed with the outer peripheral wall 102 and the inner peripheral wall 104, or may be separate from the outer peripheral wall 102 and the inner peripheral wall 104.

[0075] The top wall 108 is configured to connect the outer peripheral wall 102 and the inner peripheral wall 104. The top wall 108 is located above the bottom wall 106. The top wall 108 may be in an annular shape (ring shape). The top wall 108 may be integrally formed with the outer peripheral wall 102 and the inner peripheral wall 104, or may be separate from the outer peripheral wall 102 and the inner peripheral wall 104.

[0076] The partition wall 110 is located between the outer peripheral wall 102 and the inner peripheral wall 104. The partition wall 110 may be in the shape of a cylinder extending in the vertical direction. The partition wall 110 may be integrally formed with the bottom wall 106 and extend vertically upward from the bottom wall 106. The partition wall 110 may also be integrally formed with the top wall 108 and extend vertically downward from the top wall 108. The partition wall 110 may also be separate from the bottom wall 106 and the top wall 108.

[0077] The partition wall 110 is configured to divide the space surrounded by the outer peripheral wall 102, the inner peripheral wall 104, the bottom wall 106, and the top wall 108 into two spaces in the radial direction (hereinafter, simply referred to as "radial direction") of the wafer W held by the rotation holding unit 20. That is, the outer peripheral wall 102, the bottom wall 106, the top wall 108, and the partition wall 110 form an outer storage chamber V1 surrounded by them. The inner peripheral wall 104, the bottom wall 106, the top wall 108, and the partition wall 110 form an inner storage chamber V2 surrounded by them. The outer storage chamber V1 and the inner storage chamber V2 are configured to be able to store the solvent L4 inside. The outer storage chamber V1 is located on the outer side of the inner storage chamber V2. The outer storage chamber V1 and the inner storage chamber V2 may also be in an annular shape respectively.

[0078] An introduction hole 112 that penetrates the outer peripheral wall 102 is formed in the outer peripheral wall 102 so as to communicate the outer storage chamber V1 and the space outside the release member 100. The solvent L4 sucked from the liquid source 71 by the pump 72 is introduced into the outer storage chamber V1 through the introduction hole 112. The introduction hole 112 may extend in the horizontal direction.

[0079] A plurality of communication holes 114 penetrating the partition wall 110 are formed in the partition wall 110 in such a way as to communicate the outer storage chamber V1 and the inner storage chamber V2. The solvent L4 in the outer storage chamber V1 is supplied into the inner storage chamber V2 through the plurality of communication holes 114. The plurality of communication holes 114 are arranged along the extending direction of the partition wall 110 (the circumferential direction of the wafer W held by the rotation holding unit 20) (hereinafter, simply referred to as "circumferential direction"). The plurality of communication holes 114 may also be arranged at substantially equal intervals along the circumferential direction.

[0080] As Figure 5 shown, the diameters of the plurality of communication holes 114 may increase as they go from the outer storage chamber V1 to the inner storage chamber V2. That is, the plurality of communication holes 114 may be configured such that the flow path area increases as they go from the outer storage chamber V1 to the inner storage chamber V2. The plurality of communication holes 114 may also be configured such that the flow path area is substantially constant as they go from the outer storage chamber V1 to the inner storage chamber V2.

[0081] As Figure 5 shown, the introduction hole 112 may be arranged such that when viewed from above, it does not overlap with any of the plurality of communication holes 114 in the radial direction. The introduction hole 112 may also be arranged such that when viewed from above, in the radial direction, it overlaps with a region near the center of the partition wall 110 corresponding to two communication holes 114 that are adjacent to each other in the circumferential direction among the plurality of communication holes 114. That is, the introduction hole 112 may not face the plurality of communication holes 114 in the radial direction, but face the partition wall 110.

[0082] In a portion 106b of the bottom wall 106 that forms the inner storage chamber V2 (see Figure 6 ), a plurality of dripping holes 116 penetrating the bottom wall 106 are formed in such a way as to communicate the inner storage chamber V2 and the space (path CH) inside the release member 100. The solvent L4 flowing into the inner storage chamber V2 from the outer storage chamber V1 through the communication holes 114 drips downward through the plurality of dripping holes 116. The plurality of dripping holes 116 are arranged along the circumferential direction. The plurality of dripping holes 116 may also be arranged at substantially equal intervals along the circumferential direction. The plurality of dripping holes 116 may extend in the vertical direction.

[0083] A protruding member 118 protruding downward from the lower surface of the portion 106a may also be formed in a portion 106a of the bottom wall 106 that forms the outer storage chamber V1 (refer to Figure 6 ). The protruding member 118 may be cylindrical, or may be a protruding strip in a substantially C shape, or may be a member in which a plurality of protruding strips in an arc shape are arranged in a ring shape as a whole. The protruding member 118 may be arranged above the collecting member 80. The protruding member 118 may be integrally formed with the bottom wall 106, or may be separate from the bottom wall 106.

[0084] The collecting member 80 is configured to be able to collect cotton-like masses. The collecting member 80 is arranged so as to block the path CH. That is, the collecting member 80 extends in such a way as to connect the outer peripheral wall 32 or the outer peripheral wall 102 to the inclined surface S of the inclined wall 37. The collecting member 80 may be in a circular ring shape (ring shape) (refer to Figure 7 ), or may be in a substantially C shape.

[0085] As Figure 7 shown, a plurality of through holes 82 are formed in the collecting member 80. The shape of the plurality of through holes 82 is not particularly limited. The plurality of through holes 82 may be, for example, rectangular, circular, or polygonal. When the plurality of through holes 82 are rectangular, as Figure 7 shown, the long side direction of the through hole 82 may be along the radial direction. As Figure 7 shown, the plurality of through holes 82 may be arranged in the circumferential direction.

[0086] The sensor 90 is configured to be able to detect the state of the collecting member 80. The sensor 90 is configured to send the detected state of the collecting member 80 to the controller Ctr. The sensor 90 may also be configured to be able to detect, for example, the temperature of the collecting member 80. In this case, the controller Ctr may determine whether the collecting member 80 is in a dry state based on the temperature change of the collecting member 80 caused by the heat of vaporization of the solvent. The sensor 90 may also be configured to be able to detect, for example, the humidity near the collecting member 80. In this case, the controller Ctr may determine whether the collecting member 80 is in a dry state based on the humidity change.

[0087] The blower B is arranged above in the liquid processing unit U1. The blower B is configured to be able to operate based on an operation signal from the controller Ctr and form a downward flow (downward air flow) toward the mask member 30 and the release member 100.

[0088] [Structure of the controller]

[0089] As Figure 8 shown, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are only for convenience to divide the functions of the controller Ctr into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by executing a program, and may also be implemented by a dedicated circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit, application-specific integrated circuit) integrating them.

[0090] The reading unit M1 reads a program from a computer-readable storage medium RM. The storage unit M2 stores processing scenarios, setting data input by an operator through an external input device (not shown), and the like.

[0091] The processing unit M3 processes various data. For example, based on various data stored in the storage unit M2, the processing unit M3 generates operation signals for operating the liquid processing unit U1 and the heat treatment unit U2. For example, based on various data stored in the storage unit M2, the processing unit M3 can also generate operation signals for operating the rotation holding unit 20, pumps 42, 52, 62, 72, valves 43, 53, 63, 73, drive mechanisms 45, 55, etc.

[0092] The instruction unit M4 sends the operation signals generated in the processing unit M3 to various devices.

[0093] The hardware of the controller Ctr is constituted by, for example, one or more control computers. The controller Ctr has, for example Figure 9 the shown circuit Ctr1 as a hardware configuration. The circuit Ctr1 can be constituted by circuitry. Specifically, the circuit Ctr1 includes a processor Ctr2, a flash memory Ctr3 (storage unit), a memory Ctr4 (storage unit), a driver Ctr5, and an input / output port Ctr6. The processor Ctr2 executes a program in cooperation with at least one of the flash memory Ctr3 and the memory Ctr4, and performs signal input / output via the input / output port Ctr6, thereby constituting the above respective functional modules. The flash memory Ctr3 and the memory Ctr4 function as the storage unit M2. The driver Ctr5 is a circuit that drives various devices of the substrate processing system 1. The input / output port Ctr6 performs signal input / output between the driver Ctr5 and various devices of the substrate processing system 1 (for example, the rotation holding unit 20, pumps 42, 52, 62, 72, valves 43, 53, 63, 73, drive mechanisms 45, 55, etc.).

[0094] In the present embodiment, the substrate processing system 1 has one controller Ctr, but may also have a controller group (control unit) constituted by a plurality of controllers Ctr. When the substrate processing system 1 has a controller group, the above functional modules can be respectively implemented by one controller Ctr, or can be implemented by a combination of two or more controllers Ctr. When the controller Ctr is constituted by a plurality of computers (circuit Ctr1), the above functional modules can be respectively implemented by one computer (circuit Ctr1), or can be implemented by a combination of two or more computers (circuit Ctr1). The controller Ctr can have a plurality of processors Ctr2. In this case, the above functional modules can be respectively implemented by one processor Ctr2, or can be implemented by a combination of two or more processors Ctr2.

[0095] [Wafer Processing Method]

[0096] Refer to Figure 10 , and the processing method of the wafer W will be described. First, the controller Ctr controls the pump 72 and the valve 73 to supply the solvent L4 from the releasing member 100 to the collecting member 80 (refer to Figure 10 step S11). For example, the solvent L4 sucked from the liquid source 71 by the pump 72 is introduced into the outer storage chamber V1 through the introduction hole 112. Thus, the outer storage chamber V1 is filled with the solvent L4. During the process of the outer storage chamber V1 being filled with the solvent L4, the solvent L4 flows into the inner storage chamber V2 through the communication hole 114. Thus, the inner storage chamber V2 is filled with the solvent L4.

[0097] During the process of the inner storage chamber V2 being filled with the solvent L4, when the solvent L4 reaches the plurality of dripping holes 116, the solvent L4 is released from the lower ends of the plurality of dripping holes 116. The solvent L4 released from the lower ends of the plurality of dripping holes 116 does not immediately fall, but flows along the lower surface of the bottom wall 106 towards the protruding member 118 due to surface tension. When the solvent L4 reaches the protruding member 118, the solvent L4 accumulates at the lower end of the protruding member 118. When the solvent L4 accumulated at the lower end of the protruding member 118 exceeds a specified amount, the solvent L4 drips from the lower end of the protruding member 118. Thus, the solvent L4 is supplied to the collecting member 80 located below the protruding member 118. Therefore, when there is a cotton-like mass in the collecting member 80, the solvent L4 is supplied to the cotton-like mass, and the cotton-like mass can be dissolved and removed.

[0098] Next, the controller Ctr controls each part of the substrate processing system 1 to transfer the wafer W from the carrier 11 to the liquid processing unit U1 (refer to Figure 10 step S12).

[0099] Next, the controller Ctr controls the rotation holding part 20 to make the holding part 23 hold the wafer W, and rotates the wafer W at a specified rotation speed. In this state, the controller Ctr controls the pump 42, the valve 43 and the driving mechanism 45 to release the coating liquid L1 from the nozzle N1 onto the front surface Wa of the wafer W. Thus, the coating liquid L1 slowly spreads towards the outer periphery on the front surface Wa of the wafer W. Thus, the coating liquid L1 dries and gels to form a coating film CF on the front surface Wa of the wafer W (refer to Figure 10 step S13).

[0100] Next, the controller Ctr controls the pump 62 and the valve 63 to supply the solvent L3 from the nozzle N3 to the back surface Wb of the wafer W and near the outer peripheral edge Wc (refer to Figure 10Step S14). The solvent L3 that has reached the outer periphery slightly refluxes at the outer periphery and further flows outward. At this time, the portion of the coating film CF protruding from the outer periphery is removed by the solvent L3.

[0101] Next, the controller Ctr controls each part of the substrate processing system 1 to transfer the wafer W from the liquid processing unit U1 to the heat treatment unit U2 (refer to Figure 10 Step S15). Next, the controller Ctr controls the heat treatment unit U2 to heat the coating film CF together with the wafer W. Thereby, the coating film CF is cured into a resist film (refer to Figure 10 Step S16). In this way, the processing of the wafer W is completed, and a resist film is formed on the front surface Wa of the wafer W.

[0102] Next, the controller Ctr controls each part of the substrate processing system 1 to transfer the wafer W from the heat treatment unit U2 to the liquid processing unit U1 (refer to Figure 10 Step S17). Next, the controller Ctr controls the rotation holding unit 20 to rotate the wafer W at a specified rotational speed. In addition, the controller Ctr controls the pump 52, the valve 53, and the drive mechanism 55 to discharge the solvent L2 downward (to the peripheral portion of the wafer W) from the nozzle N2 in a state where the nozzle N2 is located above the peripheral portion of the wafer W when viewed from above (refer to Figure 10 Step S18). Thereby, the peripheral portion (bulging portion) of the resist film is removed. In addition, the processes of steps S17 and S18 can be performed when the viscosity of the coating liquid L1 is higher than a specified value, etc., and this processing does not always have to be performed.

[0103] In the above method for processing the wafer W, the solvent L2 can also be supplied to the peripheral portion of the wafer W before the solvent L3 is supplied to the back surface Wb of the wafer W and near the outer periphery Wc. The operation of supplying the solvent L3 to the back surface Wb of the wafer W and near the outer periphery Wc and the operation of supplying the solvent L2 to the peripheral portion of the wafer W can also be performed substantially simultaneously. At least one of the operation of supplying the solvent L3 to the back surface Wb of the wafer W and near the outer periphery Wc and the operation of supplying the solvent L2 to the peripheral portion of the wafer W can also be performed.

[0104] In the above method for processing the wafer W, the process of step S11 can also be performed after the process of step S18. In this case, the process of step S11 can also be performed only after the last wafer W among at least one wafer W accommodated in the carrier 11 is processed in step S18. The process of step S11 can be performed in a state where no wafer W exists in the mask member 30, and can also be performed in a state where a wafer W exists in the mask member 30 (for example, a state where the wafer W is held by the holding portion 23).

[0105] [Function]

[0106] According to the above example, the solvent L4 introduced into the outer storage chamber V1 from the introduction hole 112 fills the outer storage chamber V1 while being gradually supplied to the inner storage chamber V2 through the plurality of communication holes 114. At this time, since the plurality of communication holes 114 are arranged at regular intervals in the circumferential direction on the partition wall 110, the pressure of the solvent L4 flowing into the inner storage chamber V2 is substantially the same. Therefore, the flow rates of the solvent L4 dripping from the plurality of dripping holes 116 become substantially the same, and thus the solvent L4 is supplied to the entire collection member 80 substantially uniformly. Therefore, the cotton-like mass collected by the collection member 80 can be effectively removed.

[0107] According to the above example, the release member 100 may include a protruding member 118 that protrudes from the lower surface of the bottom wall 106 toward the collection member 80 located below. In this case, even when the solvent L4 released from the dripping hole 116 does not immediately fall downward but flows along the lower surface of the bottom wall 106, the solvent L4 accumulates at the protruding member 118 and then falls from the lower end of the protruding member 118 toward the collection member 80. In addition, when the solvents L2 and L3 are supplied to the back surface Wb and the peripheral portion of the wafer W, the solvents L2 and L3 that are thrown to the surroundings as the wafer W rotates collide with the protruding member 118 and fall from the protruding member 118 toward the collection member 80. Therefore, the solvent can be supplied to the collection member 80 more effectively.

[0108] According to the above example, the diameters of the plurality of communication holes 114 increase as the solvent L4 goes from the outer storage chamber V1 to the inner storage chamber V2. In this case, when the solvent L4 flows from the communication hole 114 into the inner storage chamber V2, the flow velocity of the solvent L4 decreases. Therefore, the solvent L4 flowing into the inner storage chamber V2 easily diffuses uniformly in the inner storage chamber V2. Therefore, the flow rates of the solvent L4 dripping from the plurality of dripping holes 116 become closer, and thus the cotton-like mass collected by the collection member 80 can be removed more effectively.

[0109] According to the above example, the introduction hole 112 may also be arranged so as not to overlap any of the plurality of communication holes 114 in the radial direction when viewed from above. In this case, it is possible to suppress the situation where the solvent L4 introduced into the outer storage chamber V1 from the introduction hole 112 immediately flows into a specific communication hole 114, and the solvent L4 easily flows into the inner storage chamber V2 from the specific communication hole 114. Therefore, the solvent L4 easily flows into the inner storage chamber V2 more uniformly. Therefore, the flow rates of the solvent L4 dripping from the plurality of dripping holes 116 become closer, and thus the cotton-like mass collected by the collection member 80 can be removed more effectively.

[0110] According to the above example, the introduction hole 112 can also be configured to overlap, in the radial direction when viewed from above, with a region near the center of the partition wall 110 corresponding to two communication holes 114 among the plurality of communication holes 114, where the two communication holes 114 are two communication holes adjacent in the circumferential direction among the plurality of communication holes 114. In this case, the solvent L4 introduced from the introduction hole 112 first collides with the partition wall 110, and then flows in the circumferential direction to fill the outer storage chamber V1. Therefore, the solvent L4 can more easily flow into the inner storage chamber V2 more uniformly.

[0111] According to the above example, the viscosity of the coating liquid L1 can be 100 cP or more. In this case, even when using a high-viscosity coating liquid L1 that is particularly likely to generate cotton-like lumps, the generation of cotton-like lumps can be suppressed.

[0112] [Modified Example]

[0113] It should be considered that the disclosure of this specification is illustrative rather than restrictive in all aspects. Various omissions, substitutions, changes, etc. can be made to the above examples without departing from the scope and spirit of the claims.

[0114] (1) It can also be that the release member 100 includes a plurality of inner storage chambers. For example, the release member 100 can further include an inner storage chamber V2 and an inner storage chamber V12 (other inner storage chambers), where the inner storage chamber V12 is located above the inner storage chamber V2 and is configured to surround the periphery of the wafer W when viewed from above. It can also be as Figure 11 illustrated, the outer storage chamber V1, the inner storage chamber V2, and the inner storage chamber V12 are separated by the partition wall 110.

[0115] It can also be that the inner storage chamber V2 is formed by the space surrounded by the bottom wall 106 and the partition wall 110. It can also be that the inner storage chamber V12 is formed by the space surrounded by the inner peripheral wall 104, the bottom wall 106, the top wall 108, and the partition wall 110.

[0116] It can also be that in the partition wall 110, in addition to the plurality of communication holes 114, a plurality of communication holes 124 (other communication holes) are formed that penetrate the partition wall 110 in a manner of communicating the outer storage chamber V1 and the inner storage chamber V12. The solvent L4 in the outer storage chamber V1 is supplied into the inner storage chamber V2 through the plurality of communication holes 114, and is supplied into the inner storage chamber V12 through the plurality of communication holes 124. The plurality of communication holes 124 are arranged in the circumferential direction. The plurality of communication holes 124 can also be arranged at substantially equal intervals in the circumferential direction.

[0117] In a portion 106c of the bottom wall 106 that forms the inner storage chamber V12, a plurality of dripping holes 126 (other dripping holes) are formed that penetrate the bottom wall 106 in a manner that connects the inner storage chamber V12 and the space (path CH) inside the release member 100. The solvent L4 that flows into the inner storage chamber V12 from the outer storage chamber V1 through the communication hole 124 drips downward through the plurality of dripping holes 126. The plurality of dripping holes 126 are arranged in the circumferential direction. The plurality of dripping holes 126 may be arranged at substantially equal intervals in the circumferential direction. The plurality of dripping holes 126 may also extend in the vertical direction. The lower ends (discharge ports) of the plurality of dripping holes 126 may be located above the inclined surface S of the inclined wall 37 or above the collection member 80.

[0118] In accordance with Figure 11 In the manner exemplified, since the solvent L4 is released from the dripping holes 116 and 126 respectively, the solvent L4 is supplied not only to the collection member 80 but also to the entire inner wall surface (the inclined surface S of the inclined wall 37) of the mask member 30. Therefore, it is also possible to effectively remove the cotton-like mass on the inclined surface S.

[0119] (2) The release member 100 may also include a plurality of outer storage chambers and a plurality of inner storage chambers. For example, the release member 100 may further include: an inner storage chamber V12 (other inner storage chamber) that is located above the inner storage chamber V2 and is configured to surround the periphery of the wafer W when viewed from above; and an outer storage chamber V11 (other outer storage chamber) that is located above the outer storage chamber V1 and is configured to surround the periphery of the inner storage chamber V12 when viewed from above. It may also be as Figure 12 shown, the outer storage chamber V1, the inner storage chamber V2, the outer storage chamber V11, and the inner storage chamber V12 are partitioned by a partition wall 110.

[0120] The outer storage chamber V1 may be formed by a space surrounded by the outer peripheral wall 102, the bottom wall 106, and the partition wall 110. The outer storage chamber V11 may be formed by a space surrounded by the outer peripheral wall 102, the top wall 108, and the partition wall 110. The inner storage chamber V2 may be formed by a space surrounded by the bottom wall 106 and the partition wall 110. The inner storage chamber V12 may be formed by a space surrounded by the inner peripheral wall 104, the bottom wall 106, the top wall 108, and the partition wall 110.

[0121] An introduction hole 122 (other introduction hole) that penetrates the outer peripheral wall 102 in a manner that connects the outer storage chamber V11 and the space outside the release member 100 may be formed in the outer peripheral wall 102. The solvent L4 sucked from the liquid source 71 by the pump 72 is introduced into the outer storage chamber V1 through the introduction hole 112 and into the outer storage chamber V11 through the introduction hole 122. The introduction hole 122 may extend in the horizontal direction.

[0122] Alternatively, in addition to the plurality of communication holes 114, a plurality of communication holes 124 (other communication holes) penetrating the partition wall 110 in a manner of communicating the outer storage chamber V11 and the inner storage chamber V12 may be formed in the partition wall 110. The solvent L4 in the outer storage chamber V1 is supplied into the inner storage chamber V2 through the plurality of communication holes 114. The solvent L4 in the outer storage chamber V11 is supplied into the inner storage chamber V12 through the plurality of communication holes 124. The plurality of communication holes 124 are arranged in the circumferential direction. The plurality of communication holes 124 may be arranged at substantially equal intervals in the circumferential direction.

[0123] Alternatively, the introduction hole 122 may be arranged such that when viewed from above, it does not overlap with any of the plurality of communication holes 124 in the radial direction. Alternatively, the introduction hole 122 may be arranged such that when viewed from above, in the radial direction, it overlaps with a region near the center of the partition wall 110 corresponding to two communication holes 124 that are two circumferentially adjacent communication holes among the plurality of communication holes 124. That is, the introduction hole 122 may not face the plurality of communication holes 124 in the radial direction, but face the partition wall 110.

[0124] In a portion 106c of the bottom wall 106 that forms the inner storage chamber V12, a plurality of dripping holes 126 (other dripping holes) penetrating the bottom wall 106 in a manner of communicating the inner storage chamber V12 and the space (path CH) inside the release member 100 are formed. The solvent L4 flowing into the inner storage chamber V12 from the outer storage chamber V11 through the communication hole 124 drips downward through the plurality of dripping holes 126. The plurality of dripping holes 126 are arranged in the circumferential direction. The plurality of dripping holes 126 may be arranged at substantially equal intervals in the circumferential direction. The plurality of dripping holes 126 may extend in the vertical direction. The lower ends (discharge ports) of the plurality of dripping holes 126 may be located above the inclined surface S of the inclined wall 37, or may be located above the collection member 80.

[0125] According to Figure 12 the exemplified manner, since the solvent L4 is released from the dripping holes 116 and 126 respectively, the solvent L4 is supplied not only to the collection member 80, but also to the entire inner wall surface (the inclined surface S of the inclined wall 37) of the mask member 30. Therefore, the cotton-like mass on the inclined surface S can also be effectively removed. In addition, according to Figure 12 the exemplified manner, the solvent L4 flowing in the outer storage chamber V1 and the inner storage chamber V2 is independent of the solvent L4 flowing in the outer storage chamber V11 and the inner storage chamber V12. Therefore, the flow rate of the solvent L4 released from the dripping hole 116 and the flow rate of the solvent L4 released from the dripping hole 126 do not affect each other. Therefore, the flow rate of the solvent L4 dripping from the dripping hole 116 and the flow rate of the solvent L4 dripping from the dripping hole 126 are substantially the same, so that the cotton-like mass can be removed more effectively.

[0126] (3) It can also be as Figure 12 illustrated. A protruding member 128 (other protruding member) protruding downward from the lower surface of a part 106c that forms an inner storage chamber V12 is formed in a part of the bottom wall 106 where the inner storage chamber V12 is formed. The protruding member 128 can be cylindrical, can be a substantially C-shaped ridge, or can be a member in which a plurality of arc-shaped ridges are arranged in a ring as a whole. The protruding member 128 can also be arranged above the inclined surface S of the inclined wall 37. The protruding member 128 can be integrally formed with the bottom wall 106 or can be separate from the bottom wall 106.

[0127] In accordance with this method, the solvent L4 released from the dropping hole 126 is difficult to be attracted to the solvent L4 released from the dropping hole 116 due to surface tension and is more likely to fall downward from the lower end of the protruding member 128. Therefore, the solvent L4 effectively drops from the dropping hole 126 onto the inner wall surface of the mask member 30 (the inclined surface S of the inclined wall 37), and thus the cotton-like mass on the inclined surface S can be removed more effectively.

[0128] (4) There is no particular limitation on the timing of supplying the solvent L4 from the solvent supply unit 70 (the releasing member 100) to the collecting member 80. The controller Ctr can, for example, control the pump 72 and the valve 73 to supply the solvent L4 from the releasing member 100 to the collecting member 80 when the collecting member 80 is dry. In this case, when a situation where the solvent L4 is needed occurs, the solvent is supplied to the collecting member 80. Therefore, the amount of the solvent L4 used can be reduced, and the cotton-like mass can be effectively removed.

[0129] The controller Ctr can also, for example, control the solvent supply unit 70 to supply the solvent L4 to the collecting member 80 when a predetermined time (for example, about 40 seconds to 60 seconds) has elapsed since the solvent was supplied to the collecting member 80. The controller Ctr can also, for example, control the solvent supply unit 70 to supply the solvent L4 to the collecting member 80 when no new solvent is supplied from the solvent supply unit 50 or the solvent supply unit 60 during the period from when the solvent is supplied to the collecting member 80 until the predetermined time has elapsed. In this case, by setting the predetermined time shorter than the time for the solvent to vaporize, the solvent can be automatically supplied to the collecting member 80 before the collecting member 80 dries. Therefore, the amount of the solvent used can be reduced, and the cotton-like mass can be effectively and automatically removed. The predetermined time can be, for example, about 40 seconds to 60 seconds.

[0130] The controller Ctr can also control the solvent supply unit 70 to supply the solvent L4 to the collection unit 80 when the drying state of the collection unit 80 is detected by the sensor 90, for example. In this case, the drying state of the collection unit 80 can be detected more accurately by the sensor. Therefore, before the collection unit 80 dries, the minimum amount of solvent required can be automatically supplied to the collection unit 80. Therefore, the amount of solvent used can be further reduced, and the cotton-like mass can be removed effectively and automatically.

[0131] (5) It is also possible that the height position of the area of the bottom surface of the inner storage chamber V2 where the dripping holes 116 are formed is higher than the height position of other areas of the bottom surface of the inner storage chamber V2. In this case, when the pump 72 is stopped and the solvent L4 is no longer supplied to the outer storage chamber V1 and the inner storage chamber V2, the dripping of the solvent L4 from the dripping holes 116 also stops immediately. Therefore, the dripping of the solvent L4 from the dripping holes 116 can be controlled with higher precision. The height position of the area of the bottom surface of the inner storage chamber V2 where the dripping holes 116 are formed can be the same as the height position of other areas of the bottom surface of the inner storage chamber V2, or can be lower than the height position of other areas of the bottom surface of the inner storage chamber V2. The height position of the area of the bottom surface of the inner storage chamber V12 where the dripping holes 126 are formed can be set in the same manner as described above.

[0132] [Other examples]

[0133] Example 1: A substrate processing apparatus according to an example of the present invention includes: a rotation holding unit configured to hold and rotate a substrate; a coating liquid supply unit configured to supply a coating liquid to the substrate; a mask member disposed to surround the substrate held by the rotation holding unit; a collection member disposed in an exhaust path between the mask member and the rotation holding unit; and a solvent supply unit disposed above the collection member and configured to supply a solvent to the collection member. The solvent supply unit includes: an inner storage chamber configured to surround the periphery of the substrate when viewed from above; an outer storage chamber configured to surround the inner storage chamber when viewed from above; and a partition wall extending in the circumferential direction of the substrate so as to divide the inner storage chamber and the outer storage chamber. A plurality of dripping holes are formed in the inner storage chamber at regular intervals in the circumferential direction. An introduction hole for introducing the solvent is formed in the outer storage chamber. A plurality of communication holes are formed in the partition wall at regular intervals in the circumferential direction. The plurality of communication holes are formed to penetrate the partition wall in such a manner that the solvent introduced into the outer storage chamber can flow into the inner storage chamber. The plurality of dripping holes are formed to penetrate the bottom wall of the inner storage chamber in such a manner that the solvent in the inner storage chamber can drip onto the collection member. In this case, the solvent introduced into the outer storage chamber from the introduction hole fills the outer storage chamber while gradually being supplied to the inner storage chamber through the plurality of communication holes. At this time, since the plurality of communication holes are formed in the partition wall at regular intervals in the circumferential direction, the pressure of the solvent flowing into the inner storage chamber becomes substantially the same. Therefore, the flow rates of the solvent dripping from the plurality of dripping holes become substantially the same, so that the solvent is supplied to the entire collection member substantially uniformly. Therefore, the cotton-like mass collected by the collection member can be effectively removed.

[0134] Example 2: In the apparatus of Example 1, the solvent supply unit may further include a protruding member protruding from the lower surface of the bottom wall of the solvent supply unit toward the collection member located below. In this case, when the solvent released from the dripping hole does not immediately fall downward but flows along the lower surface of the bottom wall of the solvent supply unit, the solvent also accumulates on the protruding member and falls from the lower end of the protruding member onto the collection member. Additionally, for example, when performing a process of supplying a solvent to the back surface or the periphery of the substrate, the solvent thrown to the periphery as the substrate rotates collides with the protruding member and falls from the protruding member onto the collection member. Therefore, the solvent can be supplied to the collection member more effectively.

[0135] Example 3: In the apparatus of Example 1 or Example 2, the plurality of communication holes may include communication holes having a diameter that increases as the solvent goes from the outer storage chamber to the inner storage chamber. In this case, when the solvent flows into the inner storage chamber through the communication holes, the flow rate of the solvent decreases. Therefore, the solvent flowing into the inner storage chamber is more likely to uniformly diffuse in the inner storage chamber. Therefore, the flow rates of the solvent dripping from the plurality of dripping holes become closer, so that the cotton-like mass collected by the collection member can be removed more effectively.

[0136] Example 4: In any of the devices of Examples 1 to 3, the introduction hole may also be configured such that, when viewed from above, it does not overlap with any of the plurality of communication holes in the radial direction of the substrate. In this case, it is possible to suppress the solvent introduced from the introduction hole from immediately flowing into a specific communication hole in the outer storage chamber, and it is easy for the solvent to flow into the inner storage chamber from the specific communication hole. Therefore, the solvent becomes easier to flow into the inner storage chamber more uniformly. Therefore, since the flow rates of the solvent dripping from the plurality of dripping holes become closer, it is possible to more effectively remove the cotton-like mass collected by the collection member.

[0137] Example 5: In the device of Example 4, the introduction hole may also be configured such that, when viewed from above, in the radial direction, it overlaps with a region near the center of the partition wall corresponding to two communication holes that are two communication holes adjacent to each other in the circumferential direction among the plurality of communication holes. In this case, the solvent introduced from the introduction hole first collides with the partition wall and then flows circumferentially to fill the outer storage chamber. Therefore, the solvent becomes easier to flow into the inner storage chamber more uniformly.

[0138] Example 6: In any of the devices of Examples 1 to 5, the solvent supply unit may also include another inner storage chamber located above the inner storage chamber and configured to surround the periphery of the substrate when viewed from above. The partition wall divides the inner storage chamber, the other inner storage chamber, and the outer storage chamber. A plurality of other dripping holes arranged at a predetermined interval in the circumferential direction are formed in the other inner storage chamber, and a plurality of other communication holes arranged at a predetermined interval in the circumferential direction are formed in the partition wall. The plurality of other communication holes are formed to penetrate the partition wall in such a way that the solvent introduced into the outer storage chamber can flow into the other inner storage chamber, and the plurality of other dripping holes are formed to penetrate the bottom wall of the other inner storage chamber in such a way that the solvent in the other inner storage chamber can drip downward. In this case, since the solvent can be released from the dripping holes and the other dripping holes respectively, the solvent is supplied not only to the collection member but also to the entire inner wall surface of the mask member. Therefore, it is also possible to effectively remove the cotton-like mass on the inner wall surface.

[0139] Example 7: In any of the apparatuses of Examples 1 to 5, the solvent supply unit may further include: another inner storage chamber located above the inner storage chamber and configured to surround the periphery of the substrate when viewed from above; and another outer storage chamber located above the outer storage chamber and configured to surround the periphery of the other inner storage chamber when viewed from above. A partition wall divides the inner storage chamber, the outer storage chamber, the other inner storage chamber, and the other outer storage chamber. A plurality of other dripping holes are formed in the other inner storage chamber at a predetermined interval in the circumferential direction. Another introduction hole for introducing the solvent is formed in the other outer storage chamber. A plurality of other communication holes are formed in the partition wall at a predetermined interval in the circumferential direction. The plurality of other communication holes are formed to penetrate the partition wall in such a manner that the solvent introduced into the other outer storage chamber can flow into the other inner storage chamber. The plurality of other dripping holes are formed to penetrate the bottom wall of the other inner storage chamber in such a manner that the solvent in the other inner storage chamber can drip downward. In this case, the same operational effects as in Example 6 can be obtained. Further, in this case, the solvent flowing in the outer storage chamber and the inner storage chamber is independent of the solvent flowing in the other outer storage chamber and the other inner storage chamber. Therefore, the flow rate of the solvent released from the dripping holes is not affected by the flow rate of the solvent released from the other dripping holes. Therefore, the flow rate of the solvent dripping from the dripping holes is also substantially the same as the flow rate of the solvent dripping from the other dripping holes, so that the cotton-like mass can be removed more effectively.

[0140] Example 8: In the apparatus of Example 6 or 7, the solvent supply unit may further include another protruding member protruding downward from the lower surface of the bottom wall of the other inner storage chamber. The plurality of other dripping holes include other dripping holes formed to penetrate the other inner storage chamber and the other protruding member. In this case, the solvent released from the other dripping holes is less likely to be attracted to the solvent released from the dripping holes due to surface tension and is more likely to fall downward from the lower end of the other protruding member. Therefore, the solvent effectively drips from the other dripping holes onto the inner wall surface of the mask member, so that the cotton-like mass on the inner wall surface can be cleaned more effectively.

[0141] Example 9: In any of the apparatuses of Examples 1 to 8, it may further include a control unit configured to be able to control the solvent supply unit. The control unit can perform the following processing: when the collection member is dry, control the solvent supply unit so that the solvent drips from the plurality of dripping holes. In this case, when a situation where the solvent is required occurs, the collection member is supplied with the solvent. Therefore, the amount of solvent used can be reduced, and the cotton-like mass can be removed effectively.

[0142] Example 10: In the apparatus of Example 9, it may also include another solvent supply unit configured to be able to supply a solvent to the substrate. The control unit can perform the following processing: During the period from when the solvent is supplied from the solvent supply unit or the other solvent supply unit until a predetermined time has elapsed, when no new solvent is supplied from the other solvent supply unit, the control unit controls the solvent supply unit to cause the solvent to drip from the plurality of dripping holes. In this case, by setting the predetermined time shorter than the time for the solvent to vaporize, the solvent can be automatically supplied to the collection member before the collection member dries. Therefore, the amount of solvent used can be reduced, and the cotton-like mass can be effectively and automatically removed.

[0143] Example 11: In the apparatus of Example 9, it may also include a sensor configured to be able to detect the dry state of the collection member. The control unit can perform the following processing: When the sensor detects the dry state of the collection member, the control unit controls the solvent supply unit to cause the solvent to drip from the plurality of dripping holes. In this case, the dry state of the collection member can be detected more accurately by the sensor. Therefore, the minimum amount of solvent required can be automatically supplied to the collection member before the collection member dries. Therefore, the amount of solvent used can be reduced, and the cotton-like mass can be effectively and automatically removed.

[0144] Example 12: In any of the apparatuses of Examples 1 to 11, the viscosity of the coating liquid may be 100 cP or more. In this case, even when using a high-viscosity coating liquid that is particularly likely to generate a cotton-like mass, the generation of the cotton-like mass can be suppressed.

Claims

1. A substrate processing apparatus, characterized in that, Comprising: A rotation holding part configured to hold a substrate and rotate the same; A coating liquid supply part configured to supply a coating liquid to the substrate; A mask member configured to surround the periphery of the substrate held by the rotation holding part; A collection member disposed in an exhaust path between the mask member and the rotation holding part; And A solvent supply part disposed above the collection member and configured to supply a solvent to the collection member, The solvent supply part includes: An inner storage chamber configured to surround the periphery of the substrate when viewed from above; An outer storage chamber configured to surround the periphery of the inner storage chamber when viewed from above; And A partition wall extending along the circumferential direction of the substrate so as to divide the inner storage chamber and the outer storage chamber, A plurality of dripping holes are formed in the inner storage chamber at regular intervals along the circumferential direction, An introduction hole for introducing a solvent is formed in the outer storage chamber, A plurality of communication holes are formed in the partition wall at regular intervals along the circumferential direction, The plurality of communication holes are formed so as to penetrate the partition wall in such a manner that the solvent introduced into the outer storage chamber can flow into the inner storage chamber, The plurality of dripping holes are formed so as to penetrate the bottom wall of the inner storage chamber in such a manner that the solvent in the inner storage chamber can drip onto the collection member.

2. The substrate processing apparatus according to claim 1, wherein: The solvent supply part further includes a protruding member protruding from the lower surface of the bottom wall of the solvent supply part toward the collection member located below.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The plurality of communication holes include communication holes whose diameters increase as going from the outer storage chamber to the inner storage chamber.

4. The substrate processing apparatus according to claim 1 or 2, wherein: The introduction hole is configured such that when viewed from above, it does not overlap with any of the plurality of communication holes in the radial direction of the substrate.

5. The substrate processing apparatus according to claim 4, wherein: The introduction hole is configured such that when viewed from above, in the radial direction, it overlaps with a region near the center corresponding to the partition wall between two communication holes, where the two communication holes are two adjacent communication holes among the plurality of communication holes in the circumferential direction.

6. The substrate processing apparatus according to claim 1 or 2, wherein: The solvent supply part further includes another inner storage chamber located above the inner storage chamber and configured to surround the periphery of the substrate when viewed from above, The partition wall divides the inner storage chamber, the other inner storage chamber, and the outer storage chamber, A plurality of other dripping holes are formed in the other inner storage chamber at regular intervals along the circumferential direction, A plurality of other communication holes are formed in the partition wall at regular intervals along the circumferential direction, The plurality of other communication holes are formed so as to penetrate the partition wall in such a manner that the solvent introduced into the outer storage chamber can flow into the other inner storage chamber, The plurality of other dripping holes are formed to penetrate the bottom wall of the other inner storage chamber in such a manner that the solvent in the other inner storage chamber can drip downward.

7. The substrate processing apparatus according to claim 1 or 2, wherein: The solvent supply unit further includes: Another inner storage chamber, which is located above the inner storage chamber and configured to surround the periphery of the substrate when viewed from above; and Another outer storage chamber, which is located above the outer storage chamber and configured to surround the periphery of the other inner storage chamber when viewed from above, The partition wall divides the inner storage chamber, the outer storage chamber, the other inner storage chamber, and the other outer storage chamber, A plurality of other dripping holes are formed in the other inner storage chamber at regular intervals along the circumferential direction, Another introduction hole for introducing the solvent is formed in the other outer storage chamber, A plurality of other communication holes are formed in the partition wall at regular intervals along the circumferential direction, The plurality of other communication holes are formed to penetrate the partition wall in such a manner that the solvent introduced into the other outer storage chamber can flow into the other inner storage chamber, The plurality of other dripping holes are formed to penetrate the bottom wall of the other inner storage chamber in such a manner that the solvent in the other inner storage chamber can drip downward.

8. The substrate processing apparatus according to claim 6, wherein: The solvent supply unit further includes another protruding member protruding downward from the lower surface of the bottom wall of the other inner storage chamber, The plurality of other dripping holes include other dripping holes formed to penetrate the other inner storage chamber and the other protruding member.

9. The substrate processing apparatus according to claim 7, wherein: The solvent supply unit further includes another protruding member protruding downward from the lower surface of the bottom wall of the other inner storage chamber, The plurality of other dripping holes include other dripping holes formed to penetrate the other inner storage chamber and the other protruding member.

10. The substrate processing apparatus according to claim 1 or 2, wherein: It further includes a control unit configured to be able to control the solvent supply unit, The control unit can perform the following processing: when the collection member is dry, control the solvent supply unit so that the solvent drips from the plurality of dripping holes.

11. The substrate processing apparatus according to claim 10, wherein: It further includes another solvent supply unit configured to be able to supply the solvent to the substrate, The control unit can perform the following processing: during the period from when the solvent is supplied from the solvent supply unit or the other solvent supply unit until a predetermined time has elapsed, when no new solvent is supplied from the other solvent supply unit, control the solvent supply unit so that the solvent drips from the plurality of dripping holes.

12. The substrate processing apparatus according to claim 10, wherein: It further includes a sensor configured to be able to detect the dry state of the collection member, The control unit can perform the following processing: when the sensor detects that the collection member is in a dry state, control the solvent supply unit so that the solvent drips from the plurality of dripping holes.

13. The substrate processing apparatus according to claim 1 or 2, characterized in that: The viscosity of the coating liquid is 100 cP or more.

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