Substrate processing device and manufacturing method thereof

Abstract

The present invention provides a substrate processing device and a manufacturing method thereof. The processing liquid ejected from the nozzle unit has sufficient corrosion resistance and can reliably prevent the ejected processing liquid from being charged. The substrate processing device has a nozzle unit. The nozzle unit has a pipe and a nozzle arranged at the top of the pipe, and the pipe has a first layer, a second layer, and a third layer. The nozzle is formed of a corrosion-resistant resin having conductivity. The third layer covers the first layer and the second layer from the outside, and covers a part of the nozzle from the outside.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a manufacturing method thereof. Background Art

[0002] In the manufacturing process of a semiconductor device, etching, ion implantation, and the like are performed using a resist formed on a substrate as a mask, and then unnecessary resist is removed from the substrate.

[0003] As a method for removing the resist, there is known an SPM treatment in which a treatment liquid such as SPM (Sulfuric Acid Hydrogen Peroxide Mixture) which is a mixture of sulfuric acid and hydrogen peroxide is supplied to a substrate to remove the resist. In order to improve the resist removal capability, the SPM is supplied to the substrate from a nozzle unit in a state heated to a high temperature (see, for example, Patent Document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2013-207080 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] However, in the substrate processing using the processing liquid in the past, the processing liquid is charged, and when the charged processing liquid is supplied to the substrate, discharge sometimes occurs due to the potential difference between the processing liquid and the substrate. If discharge occurs between the processing liquid and the substrate, the film and circuit pattern on the substrate will be damaged.

[0009] The present disclosure is made in consideration of such a point, and provides a substrate processing apparatus and a manufacturing method thereof that have sufficient corrosion resistance to a processing liquid ejected from a nozzle unit and can reliably prevent the ejected processing liquid from being charged.

[0010] Solutions for solving problems

[0011] The present invention discloses a substrate processing device, which comprises: a substrate holding mechanism that holds a processed substrate; and a nozzle unit that sprays a processing liquid onto the processed substrate held by the substrate holding mechanism. In the substrate processing device, the nozzle unit comprises: a pipe that supplies the processing liquid; and a nozzle that is arranged at the top end of the pipe and sprays the processing liquid toward the processed substrate. The pipe comprises a first layer formed of a corrosion-resistant resin, a second layer formed of a rigid material, and a third layer formed of a corrosion-resistant resin, which are arranged in sequence from the inside. The nozzle is formed of a corrosion-resistant resin having conductivity. The third layer covers the first layer and the second layer from the outside and covers a portion of the nozzle from the outside.

[0012] In the above substrate processing apparatus, the shower head may be embedded in the pipe.

[0013] In the above substrate processing apparatus, the first layer may be conductive and the first layer may be bonded to the shower head, or the second layer may be conductive and the second layer may be bonded to the shower head.

[0014] In the above substrate processing apparatus, a wire may be connected to the shower head.

[0015] In the above substrate processing apparatus, the shower head may be fused to the first layer and the third layer.

[0016] In the above substrate processing apparatus, the first layer may be formed of a PFA tube having conductivity.

[0017] In the above substrate processing apparatus, the second layer may be formed of a SUS tube.

[0018] In the above substrate processing apparatus, the third layer may be formed of a PFA tube.

[0019] In the above substrate processing apparatus, the shower head may be formed of a PFA material having electrical conductivity.

[0020] In the above substrate processing apparatus, the shower head may include an extension portion of the first layer of the pipe and a covering portion covering the extension portion from outside.

[0021] The present invention discloses a method for manufacturing a substrate processing device, which includes: a substrate holding mechanism that holds a processed substrate; and a nozzle unit that sprays a processing liquid onto the processed substrate held by the substrate holding mechanism, the method for manufacturing the substrate processing device comprising the following steps: a step of preparing a piping, the piping having a first layer formed of a corrosion-resistant resin, a second layer formed of a rigid material, and a third layer formed of a corrosion-resistant resin that are arranged in sequence from the inside, the piping supplying the processing liquid; a step of preparing a nozzle that is formed of a corrosion-resistant resin having conductivity and sprays the processing liquid toward the processed substrate; and a step of embedding the nozzle into the top end of the piping, the third layer covering the first layer and the second layer from the outside and covering a portion of the nozzle from the outside.

[0022] Effects of the Invention

[0023] According to the present disclosure, the nozzle unit has sufficient corrosion resistance against the discharged processing liquid, and the processing liquid discharged from the nozzle unit can be reliably prevented from being charged. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[0025] Figure 2 It is a schematic plan view showing the structure of a processing unit (substrate processing apparatus).

[0026] Figure 3A is a side sectional view showing a nozzle unit according to an embodiment of the present disclosure, and is taken along Figure 2 A-A' line diagram.

[0027] Figure 3B This is an enlarged view showing the static elimination effect.

[0028] Figure 3C This is an enlarged view showing the static elimination effect.

[0029] Figure 3D It is a cross-sectional view showing the wire.

[0030] Figure 4 It is an enlarged view showing the tip portion of the nozzle unit.

[0031] Figure 5A This is a cross-sectional view showing an example of the first layer.

[0032] Figure 5B It is a cross-sectional view showing an example of a nozzle.

[0033] Figure 6 It is a side cross-sectional view showing a nozzle unit according to a modified example of the present disclosure. DETAILED DESCRIPTION

[0034] <Embodiments of the present disclosure>

[0035] Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, the present invention is not limited to the embodiments described below.

[0036] In addition, the following description will take as an example a case where the treatment liquid is SPM (Sulfuric Acid Hydrogen Peroxide Mixture) which is a mixed liquid of sulfuric acid and hydrogen peroxide water.

[0037] Figure 1 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0038] like Figure 1 As shown, the substrate processing system 1 includes a carrying-in / out station 2 and a processing station 3. The carrying-in / out station 2 and the processing station 3 are provided adjacent to each other.

[0039] The loading and unloading station 2 includes a carrier loading unit 11 and a conveying unit 12. A plurality of carriers C are loaded on the carrier loading unit 11, and the plurality of carriers C accommodate a plurality of substrates to be processed, for example, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state.

[0040] The conveying unit 12 is disposed adjacent to the carrier loading unit 11, and is provided with a substrate conveying device 13 and a delivery unit 14 therein. The substrate conveying device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 13 is capable of moving in the horizontal direction and the vertical direction and rotating about the vertical axis, and conveys the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0041] The processing station 3 is provided adjacent to the conveyor 12. The processing station 3 includes a conveyor 15 and a plurality of processing units (substrate processing apparatuses of the present disclosure) 16. The plurality of processing units 16 are arranged on both sides of the conveyor 15.

[0042] The conveying section 15 is provided with a substrate conveying device 17 inside. The substrate conveying device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and conveys the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0043] The processing unit 16 performs a predetermined substrate process on the wafer W conveyed by the substrate conveying device 17 .

[0044] In addition, the substrate processing system 1 includes a control device 4. The control device 4 includes, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes to be performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0045] The program may be recorded on a computer-readable storage medium or loaded from the storage medium to the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0046] In the substrate processing system 1 configured as described above, first, the substrate conveyor 13 of the transport station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate conveyor 17 of the processing station 3 and is transported to the processing unit 16.

[0047] After being processed by the processing unit 16, the wafer W is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

[0048] Next, refer to Figure 2 Next, a schematic structure of the processing unit (substrate processing apparatus of the present disclosure) 16 will be described. Figure 2 It is a schematic plan view showing the structure of the processing unit 16 .

[0049] like Figure 2 As shown, the processing unit (substrate processing device) 16 includes: a chamber 21; a substrate holding mechanism 22 disposed in the chamber 21 and rotatably holding a wafer W; a recovery cup 23; and a nozzle unit 30 that sprays a processing liquid toward the wafer W.

[0050] The substrate holding mechanism 22 holds the wafer W horizontally and rotates the held wafer W around a vertical axis. The recovery cup 23 is disposed to surround the substrate holding mechanism 22 and is used to receive and recover the processing liquid that is scattered to the outside of the wafer W due to the centrifugal force generated by the rotation.

[0051] The nozzle unit 30 is disposed in the chamber 21 and supplies the processing liquid toward the wafer W from above the wafer W. Such a nozzle unit 30 includes: a pipe 30A that supplies the processing liquid; a nozzle head 40 that is provided at the top of the pipe 30A and sprays the processing liquid toward the wafer W; and a nozzle support part 25 that holds the pipe 30A of the nozzle unit 30, and the nozzle support part 25 is configured to be able to rise and fall and to be able to rotate.

[0052] Next, use Figure 2 and Figure 3A to Figure 3C The configuration of the nozzle unit 30 is discussed in further detail.

[0053] like Figure 2 and Figure 3A to Figure 3C As shown, the nozzle unit 30 includes: a pipe 30A that supplies a processing liquid; a nozzle head 40 that is provided at the top of the pipe 30A; and a nozzle support part 25 that supports the pipe 30A so that it can be raised and lowered and rotatable. The nozzle unit 30 sprays SPM toward the wafer W.

[0054] Here, when the SPM is used for, for example, resist removal, it is ejected from the shower head 40 toward the wafer W at a high temperature of about 160°C.

[0055] The nozzle unit 30 is further described. The pipe 30A of the nozzle unit 30 is formed in a substantially L-shape when viewed from the side, and has a first layer 31 formed of a corrosion-resistant resin, a second layer 32 formed of a rigid material, and a third layer 33 formed of a corrosion-resistant resin, which are arranged in order from the inside. In addition, the nozzle head 40 of the nozzle unit 30 is formed independently of the pipe 30A and is formed of a conductive corrosion-resistant resin embedded in the top end of the pipe 30A.

[0056] Specifically, as the first layer 31 of the pipe 30A, a thermoplastic material having chemical resistance and heat resistance to SPM, for example, a PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether) tube having electrical conductivity can be used.

[0057] In addition, as the second layer 32 , a SUS (stainless steel) pipe which functions as a framework for ensuring the rigidity of the pipe 30A and has conductivity can be used.

[0058] Furthermore, as the third layer 33 , a thermoplastic material having chemical resistance and heat resistance to SPM, for example, a PFA tube can be used.

[0059] Furthermore, the shower head 40 can be made of a PFA material having electrical conductivity.

[0060] like Figure 3A to Figure 3CAs shown in FIG. 1 , the nozzle unit 30 further includes a conductor 50, which is provided on the base end side of the pipe 30A and has conductivity. A conductive joint 51, for example, a joint 51 made of a conductive PFA material, is installed at the base end of the pipe 30A. The pipe 30A is plugged into the nozzle support 25 via the conductive joint 51 installed at the base end. In this case, the nozzle support 25 has conductivity, and the pipe 30A is plugged into the nozzle support 25 in a manner that is freely detachable from the conductive nozzle support 25 via the joint 51. Therefore, by plugging a new pipe 30A and a nozzle head 40 into the nozzle support 25, the pipe 30A and the nozzle head 40 can be easily replaced.

[0061] The conductor 50 provided at the base end of the pipe 30A is used to seal and cover the pipe 30A from the outside. In addition, a portion of the second layer 32 is removed from the pipe 30A covered by the conductor 50, and a mounting member 50a for mounting the conductor 50 on the pipe 30A is provided in the conductor 50 corresponding to the portion where the second layer 32 is removed.

[0062] Furthermore, in the portion of the pipe 30A covered with the conductor 50 , the outer surface of the first layer 31 having conductivity of the pipe 30A is electrically connected to the conductor 50 .

[0063] In this case, if Figure 3A and Figure 3C As shown, in the pipe 30A, the first layer 31 penetrates the conductor 50 and further toward the base end side ( Figure 3A The base end of the pipe 30A is formed by extending to the right side of the first layer 31, and a conductive joint 51 is installed at the base end of the first layer 31.

[0064] In addition, the second layer 32 is disposed in the conductor 50 toward the base end side of the pipe 30A ( Figure 3A However, the conductor 50 passes through the mounting member 50a in the right direction and extends toward the right side. Figure 3C The right side of the part ends.

[0065] Furthermore, the third layer 33 is disposed in the conductor 50 toward the base end side of the pipe 30A ( Figure 3A ), but in front of the mounting member 50a in the conductor 50 ( Figure 3C The left side of ) ends.

[0066] Next, the materials and structures of the first layer 31 to the third layer 33 of the pipe 30A and the nozzle 40 are further described. The first layer 31 of the pipe 30A is made of a PFA tube having conductivity as described above, and can be made of, for example, Figure 5ANE (Non Explosion: non-explosion-proof) type PFA tube as shown. The first layer 31 composed of the NE type PFA tube has: a tube body 31a made of PFA; and four carbon conductive parts 31b, which are provided on the outer surface of the PFA tube body 31a and extend in the longitudinal direction of the tube body 31a. The four conductive parts 31b are provided on the outer surface of the tube body 31a at intervals of 90 degrees along the circumferential direction. Therefore, the first layer 31 has conductivity along the longitudinal direction on its outer surface.

[0067] In addition, the second layer 32 is composed of the SUS tube as described above, and the second layer 32 has conductivity as a whole.

[0068] As described above, the third layer 33 is made of a PFA tube, has chemical resistance and heat resistance to SPM, but does not have electrical conductivity. However, the present invention is not limited thereto, and the third layer 33 may be made of a PFA tube, has chemical resistance and heat resistance to SPM, and also has electrical conductivity. In this case, in addition to the first layer 31 and the second layer 32, the third layer 33 may be used to release the electric charge in the treatment liquid to the outside.

[0069] Furthermore, the nozzle head 40 is fitted into the front end side of the pipe 30A and is basically provided independently from the pipe 30A.

[0070] The top end 41 of the nozzle 40 is directed toward the wafer W. In addition, as will be discussed later, at least the inner surface of the nozzle 40 has conductivity from the top end 41 toward the pipe 30A side, and the processing liquid sprayed from the top end 41 of the nozzle 40 toward the wafer W is de-charged, thereby reliably preventing the processing liquid sprayed toward the wafer W from being charged.

[0071] Such a nozzle 40 is formed of a conductive PFA material, for example, Figure 5B AS (Anti-Static) type PFA material is used as shown. Figure 5B As shown, the nozzle 40 has: a cylindrical main body 40a made of PFA; four carbon conductive parts 40b, which are arranged on the outer surface 42 of the main body 40a and extend in the length direction of the PFA main body 40a; and four carbon conductive parts 40c, which are arranged on the inner surface 43 of the main body 40a and extend in the length direction of the main body 40a.

[0072] In this case, four conductive parts 40b are provided on the outer surface 42 of the main body 40a at intervals of 90° along the circumferential direction, and four conductive parts 40c are provided on the inner surface 43 of the main body 40a at intervals of 90° along the circumferential direction. Furthermore, each conductive part 40b of the nozzle 40 is provided at the same position in the circumferential direction relative to the corresponding conductive part 40c, and each conductive part 40b is connected to the corresponding conductive part 40c via a current-carrying part 40d provided in a manner penetrating the main body 40a.

[0073] Therefore, the showerhead 40 has chemical resistance and heat resistance, and has conductivity on its inner and outer surfaces along its length.

[0074] In addition, if Figure 3B As shown in FIG. 1 , the nozzle 40 is embedded in the tip of the pipe 30A, but in this case, the tip of the first layer 31 of the pipe 30A is butted against the base end of the nozzle 40. Furthermore, the tip of the first layer 31 and the base end of the nozzle 40 are welded to form a joint 36. Furthermore, the first layer 31 having conductivity on the outer surface and the nozzle 40 having conductivity on the outer surface can be electrically connected via the joint 36.

[0075] The tip of the second layer 32 of the pipe 30A extends to the vicinity of the middle of the shower head 40, forming a joint 37 between the second layer 32 and the shower head 40. The second layer 32 and the shower head 40 having an electrically conductive outer surface can be electrically connected to each other.

[0076] Furthermore, the tip of the third layer 33 of the pipe 30A extends further toward the tip side of the nozzle head 40 than the second layer 32 , and the tip of the third layer 33 and the nozzle head 40 are welded to form a joint portion 38 .

[0077] exist Figure 3B In the embodiment, the nozzle 40 having conductivity on the inner surface can remove the static electricity of the treatment liquid passing through the inner surface. Meanwhile, the nozzle 40 having conductivity on the outer surface can be connected to the outer surface of the first layer 31 via the joint 36. In addition, the nozzle 40 can be connected to the second layer 32 on its outer surface.

[0078] Furthermore, a wire 48 is provided on the outer surface of the nozzle 40 for conducting with the nozzle 40 to remove static electricity from the treatment liquid. The wire 48 is used to conduct with the nozzle 40 to remove static electricity from the treatment liquid passing through the nozzle 40. Figure 3D As shown, it has: a metal wire (copper wire) 48a; and a chemical-resistant protective layer 48b, which protects the metal wire from the processing liquid.

[0079] The lead wire 48 is directly connected to the nozzle head 40 , extends along the pipe 30A, and is grounded at a desired grounding position 60 .

[0080] In addition, if Figure 3A As shown in the figure, as described above, the conductor 50 is provided on the base end side of the pipe 30A of the nozzle unit 30, but the conductor 50 is formed of PTFE (polytetrafluoroethylene) containing, for example, carbon stirred in and having conductivity as a whole. In this case, since the second layer 32 and the third layer 33 of the pipe 30A are both extended to the base end side and end in the conductor 50, the first layer 31 is exposed to the outside in the conductor 50, and the outer surface of the conductive first layer 31 is conductive and is in electrical connection with the conductor 50.

[0081] In addition, the third layer 33 extends to the left side of the mounting member 50a in the conductor 50 and ends, so the second layer 32 is exposed in the conductor 50 and is electrically connected to the conductor 50. Furthermore, the second layer 32 extends to the right side of the mounting member 50a in the conductor 50 and ends.

[0082] Then, the first layer 31 of the pipe 30A passes through the conductor 50 and is directed toward the base end side ( Figure 3A The connector 51 is provided on the first layer 31. The connector 51 is formed of, for example, a PFA material having conductivity. Specifically, the connector 51 can be made of, for example, a conductive material having conductivity on the inner and outer surfaces. Figure 5B The nozzle support 25 is provided with a connecting pipe 52 having the same structure as the conductive first layer 31. The connecting pipe 52 is composed of a NE type PFA tube having conductivity on the outer surface, and the first layer 31 and the connecting pipe 52 are clamped from the outside by a joint 51 having conductivity on the inner and outer surfaces, so that the inside of the first layer 31 and the inside of the connecting pipe 52 can be connected. In this case, the first layer 31 and the connecting pipe 52 are also electrically connected by means of the joint 51. The connecting pipe 52 in the nozzle support 25 having such a structure is grounded via a conductive wire not shown.

[0083] In addition, if Figure 3B As shown in FIG. 1 , on the tip side of the pipe 30A, the third layer 33 completely covers the first layer 31 and the second layer 32 from the outside, and also covers a part of the nozzle head 40 from the outside. Since the third layer 33 has high chemical resistance and heat resistance, the first layer 31, the second layer 32, and the nozzle head 40 can be effectively protected from the processing liquid containing, for example, high-temperature SPM by using the third layer 33 having high chemical resistance and heat resistance.

[0084] Next, the operation of this embodiment having such a structure will be described.

[0085] First, if Figure 2As shown, in the processing unit (substrate processing device of the present disclosure) 16, the wafer W is held by the substrate holding mechanism 22. Then, the wafer W held by the substrate holding mechanism 22 is rotated by the substrate holding mechanism 22, and the processing liquid composed of, for example, SPM is sprayed toward the wafer W from the nozzle head 40 of the nozzle unit 30 during the rotation of the wafer W.

[0086] During this period, the processing liquid scattered to the outside of the wafer W due to the centrifugal force generated by the rotation of the wafer W is received by the recovery cup 23 and recovered.

[0087] It is also considered that when the processing liquid is ejected from the nozzle head 40 of the nozzle unit 30 toward the wafer W, the processing liquid is charged and has electric charge.

[0088] According to the present embodiment, the inner surface of the shower head 40 has conductivity, and thus, the charges in the processing liquid passing through the shower head 40 are discharged toward the inner surface of the shower head 40 .

[0089] Next, the electric charge discharged to the inner surface of the shower head 40 is discharged to the outside through the following three conducting paths (1) to (3), and is appropriately eliminated.

[0090] (1) The charges discharged to the conductive inner surface of the nozzle head 40 flow to the conductive outer surface of the nozzle head 40, and then flow from the outer surface of the nozzle head 40 through the second layer 32 to the conductor 50. Then, the charges flowing to the conductor 50 reach the outer surface of the first layer 31, and then flow outward from the nozzle support part 25 through the connector 51 and are grounded, so that the charges in the processing liquid are properly removed.

[0091] (2) The electric charges discharged to the conductive inner surface of the nozzle 40 flow toward the conductive outer surface of the nozzle 40. The electric charges then flow from the outer surface of the nozzle 40 through the conductive outer surface of the first layer 31 to the connector 51, and then flow outward from the nozzle support 25 to the ground, thereby properly removing the electric charges in the processing liquid.

[0092] (3) The charges discharged to the conductive inner surface of the shower head flow to the conductive outer surface of the shower head 40. Then, the charges are grounded from the outer surface of the shower head 40 through the lead 48 to the desired grounding position 60. In this way, the charges in the processing liquid are appropriately removed.

[0093] As described above, according to the present embodiment, the electric charge in the processing liquid passing through the shower head 40 can be discharged to the inner surface of the shower head 40 and then grounded to the outside, so that the electric charge in the processing liquid can be appropriately eliminated.

[0094] In addition, at the tip end side of the pipe 30A, the third layer 33 having high chemical resistance and heat resistance can completely cover the first layer 31 and the second layer 32, and can also cover a portion of the shower head 40. Thus, the first layer 31, the second layer 32, and the shower head 40 can be effectively and reliably protected from the processing liquid containing high-temperature SPM.

[0095] Furthermore, by embedding the conductive shower head 40 in the tip of the pipe 30A, the nozzle unit 30 including the pipe 30A and the conductive shower head 40 provided at the tip of the pipe 30A can be easily and simply manufactured, thereby obtaining a substrate processing apparatus.

[0096] The nozzle head 40 is welded to the first layer 31 and welded to the third layer 33. Therefore, the nozzle head 40 can be welded to the first layer 31 and the third layer 33 of the pipe 30A, thereby firmly fixing the nozzle head 40 to the tip of the pipe 30A.

[0097] Furthermore, after the charges in the processing liquid passing through the nozzle head 40 are discharged toward the inner surface of the nozzle head 40, they can be discharged toward the outside through the three conducting paths (1) to (3). Therefore, compared with the case where the charges on the inner surface of the nozzle head 40 are discharged toward the outside through only one path, for example, the charges in the processing liquid can be removed quickly and reliably.

[0098] <Modification of the present disclosure>

[0099] Next, use Figure 6 In the above-mentioned embodiment, an example is shown in which a nozzle head 40 independently provided from the piping 30A is embedded in the top end of the piping 30A of the nozzle unit 30, but the present invention is not limited thereto, and the first layer 31 of the piping 30A may be further extended to the top end side to form an extension portion 46, a covering portion 47 is provided around the extension portion 46 to cover the extension portion 46 from the outside, and the nozzle head 40 is formed by the extension portion 46 and the covering portion 47.

[0100] Specifically, as the first layer 31 of the pipe 30A, a thermoplastic material having chemical resistance and heat resistance to SPM, such as a PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether) tube having conductivity can be used. In this case, as the first layer 31 of the pipe 30A, an AS type PFA tube having conductivity on the inner and outer surfaces can be used (see Figure 5B ). Furthermore, as the first layer 31, a PFA tube containing CNT (Carbon Nano Tube) may be used, which has electrical conductivity as a whole.

[0101] In addition, as the second layer 32 , a SUS (stainless steel) pipe which functions as a framework for ensuring the rigidity of the pipe 30A and has conductivity can be used.

[0102] Furthermore, as the third layer 33 , a thermoplastic material having chemical resistance and heat resistance to SPM, for example, a PFA tube can be used.

[0103] Thus, the first layer 31 of the pipe 30A has conductivity on the inner and outer surfaces and extends toward the base end side of the pipe 30A to form the extension portion 46. In addition, the covering portion 47 covering the extension portion 46 is also formed of a PFA material, and the covering portion 47 contains carbon stirred in. The nozzle 40 is formed by the extension portion 46 and the covering portion 47 having conductivity on the inner and outer surfaces.

[0104] exist Figure 6 In the process, the charges in the treatment liquid passing through the nozzle 40 are transmitted from the inner surface of the conductive extension part 46 to the outer surface, and then the charges reaching the outer surface of the extension part 46 reach the outer surface of the covering part 47 containing the stirred carbon.

[0105] However, in Figure 1 to Figure 5B In the illustrated embodiment, an example is shown in which the nozzle 40 is formed of an AS type PFA material and has conductivity on the inner surface and the outer surface. However, the present invention is not limited to this. The nozzle 40 may be formed of a PFA material containing carbon stirred therein so that the nozzle 40 as a whole including the inner surface and the outer surface has conductivity.

[0106] Furthermore, in Figure 1 to Figure 5B The embodiments shown and Figure 6 In the modification shown, an example in which a SUS tube is used as the second layer 32 is shown, but the present invention is not limited thereto, and a hard resin having conductivity may be used as the second layer 32. Furthermore, a ceramic material may be used as the second layer 32.

[0107] The configurations in the above-described embodiment and the various modifications can be appropriately combined as long as they do not contradict each other.

Claims

1. A substrate processing device comprising: a substrate holding mechanism that holds a substrate to be processed; and a nozzle unit that sprays a processing liquid toward the substrate to be processed held by the substrate holding mechanism, characterized in that: The nozzle unit includes: a pipe for supplying the processing liquid; and a nozzle head provided at a tip of the pipe for spraying the processing liquid toward the substrate to be processed. The pipe has a first layer formed of a corrosion-resistant resin, a second layer formed of a rigid material, and a third layer formed of a corrosion-resistant resin, which are arranged in order from the inside. The nozzle is formed of a corrosion-resistant resin having conductivity. The third layer covers the first layer and the second layer from the outside, and covers a portion of the nozzle from the outside, The nozzle is embedded in the pipe and is independently constructed from the pipe. The top end of the third layer extends further toward the top end side of the nozzle head than the top end of the second layer, and the top end of the second layer extends further toward the top end side of the nozzle head than the top end of the first layer.

2. The substrate processing device according to claim 1, characterized in that: The first layer has conductivity, and the first layer is bonded to the shower head, or the second layer has conductivity, and the second layer is bonded to the shower head.

3. The substrate processing device according to claim 1 or 2, characterized in that: The nozzle is connected with a wire.

4. The substrate processing device according to claim 1 or 2, characterized in that: The nozzle is welded to the first layer and the third layer.

5. The substrate processing device according to claim 1 or 2, characterized in that: The first layer is composed of a PFA tube having electrical conductivity.

6. The substrate processing device according to claim 1 or 2, characterized in that: The second layer is composed of a SUS tube.

7. The substrate processing device according to claim 1 or 2, characterized in that: The third layer is composed of a PFA tube.

8. The substrate processing device according to claim 1 or 2, characterized in that: The shower head is formed of a PFA material having electrical conductivity.

9. A method for manufacturing a substrate processing device, the substrate processing device comprising: a substrate holding mechanism that holds a substrate to be processed; and a nozzle unit that sprays a processing liquid toward the substrate to be processed held by the substrate holding mechanism, characterized in that: The manufacturing method of the substrate processing device comprises the following steps: A step of preparing a pipe having a first layer formed of a corrosion-resistant resin, a second layer formed of a rigid material, and a third layer formed of a corrosion-resistant resin, which are arranged in order from the inside, and the pipe supplies the treatment liquid; A step of preparing a nozzle, the nozzle being formed of a conductive corrosion-resistant resin and spraying the processing liquid toward the substrate to be processed; and The step of inserting the nozzle into the top end of the pipe, The third layer covers the first layer and the second layer from the outside, and covers a portion of the nozzle from the outside, The nozzle is embedded in the pipe and is independently constructed from the pipe. The top end of the third layer extends further toward the top end side of the nozzle head than the top end of the second layer, and the top end of the second layer extends further toward the top end side of the nozzle head than the top end of the first layer.

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