A temperature sensing device and a temperature measurement method

Abstract

An embodiment of the present invention discloses a temperature sensing device and a temperature measurement method. In the temperature sensing device of the embodiment of the present invention, an outer hollow light guide tube and an inner hollow light guide tube are coaxially nested. The inner hollow light guide tube is located inside the outer hollow light guide tube, forming an incident light transmission channel and a scattered light transmission channel. The outer hollow light guide tube is connected to a heat transfer guide plate through a heat insulation reflection cup, and a thermo-optic modulation unit is arranged on the inner surface of the heat transfer guide plate. The thermo-optic modulation unit is composed of an optical microcavity layer and a nano-particle layer. An optical illuminator is arranged on the outer hollow light guide tube, and an optical detector is arranged at the scattered light output end of the inner hollow light guide tube. When measuring the temperature, the optical illuminator irradiates the thermo-optic modulation unit through the incident light transmission channel, and the thermo-optic modulation unit reflects the reflected light to the optical detector through the scattered light transmission channel. Dark field scattered light is used for temperature detection, so the influence of ambient light and the noise of a broadband light source can be reduced, and the sensitivity of temperature measurement can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of temperature sensing, and particularly relates to a temperature sensing device and a temperature measurement method. Background Art

[0002] Traditional temperature sensors include expansion type temperature sensors, thermoelectric type temperature sensors, radiation type temperature sensors, etc. They have all developed relatively maturely and have been widely used commercially.

[0003] Among them, the fiber optic temperature sensor based on the Fabry-Perot reflection wave interference principle is a newly developed type of temperature sensor in recent years. However, its manufacturing process is complex, it is easily affected by environmental light and the noise of broadband light sources, and its temperature measurement sensitivity is not high. Summary of the Invention

[0004] Embodiments of the present invention provide a temperature sensing device and a temperature measurement method, which can improve the sensitivity of temperature measurement.

[0005] In a first aspect, embodiments of the present invention provide a temperature sensing device, including: a heat transfer guide plate, a heat insulation reflection cup, an outer hollow light guide tube, an inner hollow light guide tube, an optical illuminator, an optical detector, an optically transparent fixing ring, and a thermo-optic modulation unit, wherein:

[0006] The outer hollow light guide tube and the inner hollow light guide tube are coaxially nested, the inner hollow light guide tube is located inside the outer hollow light guide tube, and the optically transparent fixing rings are provided at both ends between the outer hollow light guide tube and the inner hollow light guide tube to form an incident light transmission channel and a scattered light transmission channel;

[0007] The incident light output end of the outer hollow light guide tube is connected to the heat transfer guide plate through the heat insulation reflection cup, and the thermo-optic modulation unit is arranged on the inner surface of the heat transfer guide plate;

[0008] The thermo-optic modulation unit is composed of an optical microcavity layer and a nano-particle layer. The optical microcavity layer is composed of a visible light reflection layer, a thermo-optic thin film layer, and a high refractive index layer. The visible light reflection layer is connected to the heat transfer guide plate, the thermo-optic thin film layer is connected to the visible light reflection layer, the high refractive index layer is connected to the thermo-optic thin film layer, the nano-particle layer is located on the surface of the high refractive index layer or inside the thermo-optic thin film layer, and the thermo-optic modulation unit is arranged opposite to the inner hollow light guide tube;

[0009] An optical illuminator is arranged at the incident light input end of the outer hollow light guide tube, an optical detector is arranged at the scattered light output end of the inner hollow light guide tube, and the optical illuminator is a ring array light emitting source.

[0010] In some embodiments, the optical microcavity layer is an FP microcavity or a photonic crystal microcavity.

[0011] In some embodiments, the nanoparticle layer is composed of metal conductive particles or dielectric particles with a high optical refractive index.

[0012] In some embodiments, the metal conductive particles are Au, Al, Ag, or Ni, and the dielectric particles are Si, Ge, TiO2, or Al2O3.

[0013] In some embodiments, the thermo-optic thin film layer is composed of optically transparent polydimethylsiloxane or Si.

[0014] In some embodiments, the optical illuminator is composed of an LED or a semiconductor laser light source.

[0015] In some embodiments, the heat-insulating reflective cup is made of a low-thermal-conductivity glass material, and the inner wall of the heat-insulating reflective cup is coated with an optical reflective film.

[0016] In some embodiments, the substrates of the inner hollow light guide tube and the outer hollow light guide tube are both glass, and the inner walls of the inner hollow light guide tube and the outer hollow light guide tube are both coated with optical reflective films.

[0017] In some embodiments, the optical detector is a unit photodetector or a planar array detector. The unit photodetector is a silicon photodiode, a silicon photocell, or a germanium diode, and the planar array detector is a CCD or a CMOS image sensor.

[0018] In a second aspect, an embodiment of the present invention further provides a temperature measurement method, including:

[0019] In some embodiments, the method is applied to a temperature sensing device, including:

[0020] Contacting a target to be measured through a heat transfer guide plate of the temperature sensing device. The change in temperature causes a change in the refractive index of the thermo-optic thin film layer in the optical microcavity layer, thereby causing a shift in the resonance spectrum of the optical microcavity layer;

[0021] Irradiating a thermo-optic modulation unit at a large angle through an optical illuminator of the temperature sensing device. The backscattering spectrum of the nanoparticles in the nanoparticle layer in the optical microcavity layer shifts when the temperature changes, generating backscattered light after the shift;

[0022] Collecting the backscattered light and measuring the target scattered light intensity of a target wavelength in the backscattered light through an optical detector in the temperature sensing device;

[0023] Determining the target electrical signal amplitude corresponding to the target scattered light intensity;

[0024] Determine the temperature of the target to be measured based on the correspondence between the amplitude of the electrical signal corresponding to the target wavelength and the temperature and the target electrical signal amplitude.

[0025] In a third aspect, an embodiment of the present invention further provides a temperature measurement device, including a memory and a processor. A computer program is stored in the memory, and when the processor calls the computer program in the memory, it executes the steps in any one of the temperature measurement methods provided by the embodiments of the present invention.

[0026] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium. The computer-readable storage medium stores multiple instructions, and the instructions are suitable for being loaded by a processor to execute the steps in any one of the temperature measurement methods provided by the embodiments of the present invention.

[0027] An embodiment of the present invention provides a temperature sensing device. When performing temperature measurement, an optical illuminator irradiates a thermo-optical modulation unit through an incident light transmission channel formed by an outer hollow light guide tube and an inner hollow light guide tube. The thermo-optical modulation unit reflects the reflected light to an optical detector through a scattered light transmission channel in the inner hollow light guide tube. The whole process is carried out inside the temperature sensing device. Using dark-field scattered light for temperature detection can reduce the influence of ambient light and the noise of broadband light sources and improve the sensitivity of temperature measurement. Description of the Drawings

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0029] Figure 1 is a schematic structural diagram of a temperature sensing device provided by an embodiment of the present invention;

[0030] Figure 2 is a schematic structural diagram of a thermo-optical modulation unit provided by an embodiment of the present invention;

[0031] Figure 3 is a spectral diagram of the scattering spectrum distribution of a microcavity-particle coupling system using a PDMS thermo-optical thin film of the present invention at different temperatures;

[0032] Figure 4 is a schematic flowchart of a temperature measurement method provided by an embodiment of the present invention;

[0033] Figure 5 is a schematic structural diagram of a temperature measurement device provided by an embodiment of the present invention. Detailed Embodiments

[0034] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are only a part rather than all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0035] In the following description, specific embodiments of the present invention will be described with reference to steps and symbols executed by one or more computers, unless otherwise stated. Therefore, these steps and operations will be referred to as being executed by a computer several times. The computer execution referred to herein includes the operations of a computer processing unit that represents electronic signals in a structured form of data. This operation transforms the data or maintains its position in the memory system of the computer, which can be reconfigured or otherwise changed in a manner well known to those skilled in the art. The data structure maintained by the data is the physical location of the memory, which has specific characteristics defined by the data format. However, the principles of the present invention are described in the above text, which does not represent a limitation. Those skilled in the art will understand that the various steps and operations described below can also be implemented in hardware.

[0036] The principles of the present invention are operational using many other general-purpose or special-purpose computing, communication environments or configurations. Examples of well-known computing systems, environments, and configurations suitable for the present invention may include, but are not limited to, cellular telephones, personal computers, servers, multiprocessor systems, microcomputer-based systems, mainframe computers, and distributed computing environments, including any of the above systems or devices.

[0037] The terms "first", "second", "third", etc. in the present invention are used to distinguish different objects rather than to describe a specific order. In addition, the terms "comprising" and "having", and any variations thereof, are intended to cover non-exclusive inclusion.

[0038] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of a temperature sensing device provided by an embodiment of the present invention.

[0039] The temperature sensing device includes a heat conduction plate 1, a heat insulation reflection cup 2, an outer hollow light guide tube 3, an inner hollow light guide tube 4, an optical illuminator 5, an optical detector 6, an optically transparent fixing ring 7, and a thermo-optical modulation unit 8, wherein:

[0040] The outer hollow light guide tube 3 and the inner hollow light guide tube 4 are coaxially nested, with the inner hollow light guide tube 4 located inside the outer hollow light guide tube 3. Optical transparent fixing rings 7 are provided at both ends between the outer hollow light guide tube 3 and the inner hollow light guide tube 4, forming an incident light transmission channel 9 and a scattered light transmission channel 10;

[0041] The incident light output end of the outer hollow light guide tube 3 is connected to the heat transfer guide plate 1 through the heat insulation reflection cup 2, and the thermo-optical modulation unit 8 is arranged on the inner surface of the heat transfer guide plate 1;

[0042] The thermo-optical modulation unit 8 is composed of an optical microcavity layer 81 and a nano-particle layer 82. More specifically, as Figure 2 shown, Figure 2 is a schematic structural diagram of the thermo-optical modulation unit 8. The optical microcavity layer 81 is composed of a visible light reflection layer 811, a thermo-optical thin film layer 812, and a high refractive index layer 813. The visible light reflection layer 811 is connected to the heat transfer guide plate 1, the thermo-optical thin film layer 812 is connected to the visible light reflection layer 811, and the high refractive index layer 813 is connected to the thermo-optical thin film layer 812. The nano-particle layer 82 is located on the surface of the high refractive index layer 813 or inside the thermo-optical thin film layer 812. The thermo-optical modulation unit 8 is disposed opposite to the inner hollow light guide tube 4;

[0043] An optical illuminator 5 is provided at the incident light input end of the outer hollow light guide tube 3, and an optical detector 6 is provided at the scattered light output end of the inner hollow light guide tube 4. The optical illuminator 5 is a ring array light source.

[0044] In some embodiments, the optical microcavity layer 81 is a Fabry-Perot (FP) microcavity or a photonic crystal microcavity.

[0045] In some embodiments, the nano-particle layer 82 is metal conductive particles or dielectric particles with a high optical refractive index. Among them, the size of the nano-particles in the nano-particle layer 82 is in the range of 20 - 300 nm, and the shape of the nano-particles can be spherical, disk-shaped, circular ring-shaped or other shapes.

[0046] In some embodiments, the metal conductive particles are Au, Al, Ag or Ni, and the dielectric particles are Si, Ge, TiO2 or Al2O3.

[0047] In some embodiments, the thermo-optical thin film layer 812 is composed of optically transparent polydimethylsiloxane (PDMS), Si or other materials with an absolute value of the thermo-optical coefficient not less than 1×10 -4 K -1 Among them, PDMS has a high linear negative thermo-optical coefficient, with a value as high as -4.5×10 -4 K -1 , and other optional common thermo-optical thin film materials also include silicon (1.8×10 -4 K -1 ).

[0048] The PDMS thickness is taken as 2 μm, and the backscattering intensity spectra at different temperatures obtained by the constructed thermo-optic modulation unit 8 at an incident angle of θ = 70° are as Figure 3 shown. It can be seen from the results in the figure that when the temperature range changes from 0 °C to 150 °C, the resonant scattering spectrum shifts, and the shift amount increases with the increase of the wavelength.

[0049] In some embodiments, the optical illuminator 5 is composed of an LED or a semiconductor laser light source. Specifically, it can be composed of a plurality of LEDs to form an annular array and be arranged around the incident light input end of the incident light transmission channel 9, or composed of a plurality of semiconductor laser light sources to form an annular array and be arranged around the incident light input end of the incident light transmission channel 9.

[0050] Among them, the optical radiation emitted by the optical illuminator 5 is coupled into the incident light transmission channel 9, and then after being reflected by the heat-insulating reflection cup 2, it irradiates the nanoparticle layer 82 on the surface of the heat transfer guide plate 1 at a large angle (more than 45 degrees), generating resonant backscattered light. The scattered light is collected by the scattered light transmission channel 10 and transmitted to the optical detector 6 for detection.

[0051] In some embodiments, the heat-insulating reflection cup 2 is made of a low-thermal-conductivity glass material, and the inner wall of the heat-insulating reflection cup 2 is coated with an optical reflection film.

[0052] In some embodiments, the base materials of the inner hollow light guide tube 4 and the outer hollow light guide tube 3 are both glass, and the inner walls of the inner hollow light guide tube 4 and the outer hollow light guide tube 3 are both coated with an optical reflection film.

[0053] In some embodiments, the optical detector 6 is a unit photodetector or a focal plane array detector. The unit photodetector is a silicon photodiode, a silicon photocell or a germanium diode, and the focal plane array detector is a CCD or a CMOS image sensor.

[0054] It should be noted that Figure 1 the structure shown is symmetric about the left and right.

[0055] The temperature sensing device of the present invention has the following basic working principle: When the heat transfer guide plate 1 contacts the object to be measured (i.e., the object whose temperature needs to be measured), heat is conducted to the thermo-optic modulation unit 8, causing the temperature of the modulation unit to rise. The change in temperature causes the refractive index of the thermo-optic thin film layer 812 in the optical microcavity layer 81 to change. As a result, the resonant spectrum of the optical microcavity layer 81 shifts, such as the resonant peak wavelength shifting from λ0 before temperature rise to λ0±Δλ0 after temperature rise. When the light radiation emitted by the optical illuminator 5 is transmitted through the incident light transmission channel 9 to its outlet and then reflected by the heat-insulating reflection cup 2 and irradiated onto the thermo-optic modulation unit 8 at a large angle, resonant backscattered light is excited in the coupling system composed of the optical microcavity layer 81 and the nanoparticle layer 82. The backscattered light is collected at a certain angle into the scattered light transmission channel 10, transmitted through this channel to the other end and received by the optical detector 6, while the reflected light cannot be collected into the scattered light transmission channel 10 because it is a large-angle specular reflection. Therefore, the optical detector 6 mainly obtains the scattered light intensity signal. The resonant peak wavelength of the scattering spectrum will shift to a certain extent when the temperature of the thermo-optic modulation unit 8 changes. By detecting the change in light intensity of a fixed wavelength in the scattering spectrum before and after the shift, the optical detector 6 can obtain information on temperature change. Under appropriate structural parameters of the optical microcavity layer 81 and the nanoparticle layer 82, scattering peaks of different orders can coexist in the optical band. Generally, the scattering peaks of long waves have a larger bandwidth and higher temperature sensitivity, while the scattering peaks of short waves have a smaller bandwidth and smaller temperature sensitivity. A large bandwidth means a larger temperature measurement range, but the relative change in light intensity when the temperature changes is slightly lower; a small bandwidth means a larger relative change in light intensity when the temperature changes. Therefore, according to the sensitivity requirements, different scattering mode orders (wavelengths) can be selected for detection to adapt to different temperature measurement ranges and accuracy requirements.

[0056] In some embodiments, more specifically, when the optical microcavity layer 81 is an FP microcavity, when optical radiation is incident on the optical microcavity layer 81, multi-beam interference of reflected waves occurs in the FP microcavity, forming a resonant cavity mode. The wavelength λ and bandwidth Δλ corresponding to the cavity mode are determined by the cavity layer thickness d (here, the thickness of the thermo-optic thin film layer 812) and the reflectivity of the cavity wall. When there is a nanoparticle layer 82 on the surface of the optical microcavity layer 81, the mode that satisfies formula (1) is the coupled resonant mode excited by the cavity mode and the nanoparticles. This coupled resonant film can be scattered to the far field by the nanoparticles.

[0057]

[0058] Where k represents the order of the FP cavity mode, λ represents the resonance wavelength, n represents the refractive index of the thermo-optic thin film layer 812, and Φ M is the additional phase shift caused by the metal particles and the optical reflection layer, and this phase shift causes the penetration depth of the electromagnetic wave to be elongated to a distance Δd outside the cavity layer thickness.

[0059] In this embodiment, a relative temperature sensitivity parameter is defined.

[0060] Where W k represents the wavelength shift within a unit temperature of the mode order k, that is, the temperature sensitivity, Δλ k represents the relative linewidth sensitivity parameter corresponding to this mode. R T can characterize the sensitivity of the light intensity change of the microcavity scattering spectrum when the ambient temperature changes. The larger R T is, the greater the relative change in the scattered light intensity at the resonant wavelength of the corresponding mode within a certain temperature change range. For each FP cavity mode, the corresponding temperature change range ΔT=(λ k -λ k+1 ) / W k can also be calculated. By linearly fitting the temperature and the resonant wavelength, the relative temperature sensitivity parameter R Figure 3 at different resonant wavelengths in T and the measurable temperature range ΔT are calculated, and the results are shown in Table 1.

[0061] Table 1

[0062]

[0063] For different FP cavity modes, different characteristics are shown in the face of temperature changes. In Table 1, the temperature sensitivity of mode 6 is the highest, and the temperature measurement range is the widest, indicating that this mode can be used to detect high-temperature infrared objects; the relative temperature sensitivity of mode 10 is the highest, indicating that this mode can be used to detect infrared objects with relatively high temperature resolution requirements and a narrow temperature range. It can be seen that in actual use, appropriate resonant scattering wavelengths and bandwidths can be selected for measurement according to the requirements of different temperature resolutions and temperature ranges.

[0064] Using the above temperature sensing device for temperature detection, the effects and benefits of the present invention compared with the prior art are as follows:

[0065] (1) For interferometric fiber optic temperature sensors, their measurement accuracy is relatively low. For thermoelectric temperature sensors, they are widely used in industrial production, but their requirements for the stability of the reference end temperature are relatively high, which limits their measurement accuracy. For thermal resistance sensors, they have strong stability and good accuracy, but they cannot measure instantaneous temperature changes and the temperature measurement range is limited. Compared with these traditional temperature sensors, the device provided by the present invention can flexibly meet the requirements of a wide temperature measurement range and high resolution.

[0066] (2) The fiber optic temperature sensor based on the Fabry-Perot reflection wave interference principle is a newly developed type of temperature sensor in recent years. However, its manufacturing process is complex and it is easily affected by the noise of ambient light and broadband light sources, and its temperature sensitivity is limited. Compared with this temperature sensor, the device provided by the present invention uses dark field scattered light readout, which has lower noise and higher sensitivity;

[0067] (3) In addition, compared with the mechanical optical readout system, it has a lower manufacturing cost.

[0068] To facilitate better implementation of the temperature sensing device provided by the embodiments of the present invention, the embodiments of the present invention also provide a temperature measurement method based on the above temperature sensing device.

[0069] Please refer to Figure 4 , Figure 4 is a schematic flowchart of the temperature measurement method provided by an embodiment of the present invention. The execution subject of this temperature measurement method can be the temperature sensing device provided by the embodiments of the present invention. By using a large-angle tilted optical illumination coupling system of the optical microcavity and nanoparticles containing a thermo-optic material in the temperature sensing device, the relationship between the scattered light intensity and temperature change is obtained and temperature measurement is carried out, realizing a method with lower readout noise and more sensitive detection than traditional temperature sensors. Unless otherwise specified, the concepts of "optical" and "optical radiation" in the present invention specifically refer to the electromagnetic wave band covering the visible light and near-infrared bands (400-2500 nm). This temperature measurement method may include:

[0070] S1. Contact the target to be measured through the heat transfer guide plate of the temperature sensing device. The change in temperature causes the refractive index of the thermo-optic thin film layer in the optical microcavity layer to change, thereby causing the resonance spectrum of the optical microcavity layer to shift.

[0071] In this embodiment, before contacting the target to be measured through the heat transfer guide plate of the temperature sensing device, it is first necessary to construct a temperature sensing device, especially to construct the thermo-optic modulation unit in the temperature sensing device. The thermo-optic modulation unit is composed of an optical microcavity layer and a nanoparticle layer, and the optical microcavity layer is composed of a visible light reflection layer, a thermo-optic thin film layer, and a high refractive index layer.

[0072] The thermo-optic material of the thermo-optic thin film layer in the optical microcavity layer is a type of material whose refractive index changes with temperature. The parameter characterizing its thermo-optic properties is the thermo-optic coefficient. In the optical band, common thermo-optic materials include inorganic material silicon and organic material PDMS, which have relatively high thermo-optic coefficients and can reach 10 -4 K -1 order of magnitude. For an optical microcavity containing a thermo-optic thin film, when the temperature changes, the resonance peak wavelength thereof will also shift to a certain extent. Generally, the larger the thermo-optic coefficient, the greater the shift of the resonance peak wavelength.

[0073] S2. The optical illuminator of the temperature sensing device irradiates the thermo-optic modulation unit at a large angle. When the temperature changes, the backscattering spectrum of the nanoparticles in the nanoparticle layer of the optical microcavity layer shifts, generating shifted backscattered light.

[0074] In this embodiment, specifically, the optical illuminator irradiates the thermo-optic modulation unit through the incident light transmission channel.

[0075] For a reflective optical microcavity layer, when there are nanoparticles on the surface, if optical radiation irradiates the surface at a large angle, in addition to specular reflection, there is also a scattering spectrum. The scattering spectrum of the nanoparticles contains a series of scattering resonance modes, and these scattering resonance modes generally have relatively large bandwidths. When the nanoparticles are coupled with the microcavity, its scattering spectrum has a hybrid mode that includes the combined characteristics of the cavity mode and the particle scattering resonance mode, and its characteristic is that it has a narrower bandwidth and higher backscattered light intensity than the pure particle resonance mode. In addition, the resonance wavelength and its bandwidth corresponding to the cavity mode can be adjusted within a certain range by changing the structural parameters of the microcavity. Therefore, the structural parameters of the microcavity can be selected as needed to obtain a specific resonance wavelength and appropriate bandwidth. On the other hand, the higher-order modes in the hybrid mode have narrower bandwidths than the lower-order modes, so selecting an appropriate mode order is also a method to obtain an appropriate bandwidth.

[0076] When the refractive index of the thermo-optic thin film layer changes with temperature, the optical scattering spectrum of the particles in the coupling system shifts, and the intensity of a specific scattered light wavelength increases or decreases accordingly.

[0077] S3. Collect the backscattered light, and measure the target scattered light intensity of the target wavelength in the backscattered light through the optical detector in the temperature sensing device.

[0078] In this embodiment, the backscattered light is collected by using the scattered light transmission channel in the temperature sensing device. Specifically, an optical fiber or a glass light guide tube is used to collect the backscattered light at a certain angle. An optical detector in the form of a unit or a planar array is used to measure the target scattered light intensity of the target wavelength in the scattering spectrum, where the target wavelength is the wavelength to be measured.

[0079] S4. Determine the target electrical signal amplitude corresponding to the target scattered light intensity.

[0080] In this embodiment, after the target scattered light intensity is determined, it is also necessary to determine the target electrical signal amplitude corresponding to the target scattered light intensity.

[0081] Among them, before using this temperature sensing device to measure temperature, this embodiment also needs to determine the correspondence between the electrical signal amplitude corresponding to the target wavelength and the temperature. Specifically, on the premise of knowing the temperature of the target to be measured, measure the target electrical signal amplitude corresponding to the target wavelength of the target to be measured at this time, obtain the correspondence between the electrical signal amplitude and the temperature at this temperature, measure the target electrical signal amplitudes corresponding to the target wavelengths of the target to be measured at different temperatures respectively, obtain the electrical signal amplitudes generated by the light intensity at the same wavelength at different temperatures, and obtain the correspondence between the electrical signal amplitude and the temperature.

[0082] S5. Determine the temperature of the target to be measured through the correspondence between the electrical signal amplitude corresponding to the target wavelength and the temperature and the target electrical signal amplitude.

[0083] When the correspondence between the electrical signal amplitude corresponding to the target wavelength and the temperature, and the target electrical signal amplitude corresponding to the target to be measured at this time are determined, the temperature of the target to be measured can be determined at this time.

[0084] In this embodiment, after the heat transfer guide plate in the temperature sensing device contacts the target to be measured, the optical illuminator irradiates the thermo-optic modulation unit through the incident light transmission channel located inside the temperature sensing device. The thermo-optic modulation unit reflects the incident light to generate backscattered light, and transmits the backscattered light to the optical detector through the scattered light transmission channel located inside the temperature sensing device. Finally, determine the temperature of the target to be measured according to the obtained backscattered light. This embodiment uses dark field scattered light reading, which has lower noise and higher sensitivity compared with traditional bright field reflected light reading.

[0085] To facilitate better implementation of the temperature measurement method provided by the embodiments of the present invention, the embodiments of the present invention also provide a device based on the above temperature measurement method. The meanings of the nouns are the same as those in the above temperature measurement method, and the specific implementation details can refer to the description in the method embodiments.

[0086] Please refer to Figure 5 , Figure 5 is a schematic structural diagram of the temperature measurement device provided by the embodiments of the present invention. The temperature measurement device 500 may include a contact unit 501, an irradiation unit 502, a processing unit 503, a first determination unit 504, a second determination unit 505, etc. Among them:

[0087] The contact unit 501 is used to contact the target to be measured through the heat transfer guide plate of the temperature sensing device. The change in temperature causes the refractive index of the thermo-optic thin film layer in the optical microcavity layer to change, thereby causing the resonance spectrum of the optical microcavity layer to shift;

[0088] An irradiation unit 502, configured to irradiate a thermo-optic modulation unit at a large angle through an optical illuminator of the temperature sensing device, and a backscattering spectrum of nanoparticles in a nanoparticle layer of an optical microcavity layer shifts when the temperature changes, generating backscattered light after the shift;

[0089] A processing unit 503, configured to collect the backscattered light and measure a target scattered light intensity of a target wavelength in the backscattered light through an optical detector in the temperature sensing device;

[0090] A first determination unit 504, configured to determine a target electrical signal amplitude corresponding to the target scattered light intensity;

[0091] A second determination unit 505, configured to determine the temperature of the target to be measured according to a correspondence between an electrical signal amplitude corresponding to the target wavelength and the temperature and the target electrical signal amplitude.

[0092] For the specific implementation of each of the above operations, reference may be made to the foregoing embodiments and will not be elaborated herein.

[0093] In the above embodiments, the descriptions of the respective embodiments have their own emphases. For parts not elaborated in a certain embodiment, reference may be made to the detailed description of the temperature measurement method above, and will not be elaborated herein.

[0094] Those of ordinary skill in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by instructions or by controlling related hardware through instructions. The instructions can be stored in a computer-readable storage medium and loaded and executed by a processor.

[0095] Therefore, an embodiment of the present invention provides a computer-readable storage medium, in which multiple instructions are stored, and the instructions can be loaded by a processor to execute the steps in any temperature measurement method provided by the embodiment of the present invention. For example, the instructions can execute the following steps:

[0096] Contact the target to be measured through a heat transfer guide plate of the temperature sensing device, and a change in temperature causes a change in the refractive index of a thermo-optic thin film layer in the optical microcavity layer, thereby causing a shift in the resonance spectrum of the optical microcavity layer;

[0097] Irradiate the thermo-optic modulation unit at a large angle through an optical illuminator of the temperature sensing device, and a backscattering spectrum of nanoparticles in a nanoparticle layer of the optical microcavity layer shifts when the temperature changes, generating backscattered light after the shift;

[0098] Collect the backscattered light and measure a target scattered light intensity of a target wavelength in the backscattered light through an optical detector in the temperature sensing device;

[0099] Determine the target electrical signal amplitude corresponding to the target scattered light intensity;

[0100] Determine the temperature of the target to be measured based on the correspondence between the electrical signal amplitude corresponding to the target wavelength and temperature and the target electrical signal amplitude.

[0101] For the specific implementation of each of the above operations, reference may be made to the previous embodiments and will not be elaborated herein.

[0102] Among them, the computer-readable storage medium may include: read-only memory (ROM, Read Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, etc.

[0103] Since the instructions stored in the computer-readable storage medium can execute the steps in any one of the temperature measurement methods provided by the embodiments of the present invention, the beneficial effects achievable by any one of the temperature measurement methods provided by the embodiments of the present invention can be achieved. For details, refer to the previous embodiments and will not be elaborated herein.

[0104] The above has introduced in detail a temperature sensing device and a temperature measurement method provided by the embodiments of the present invention. Specific examples are used herein to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A temperature sensing device, characterized in that, The device includes a heat transfer guide plate, a heat insulation reflective cup, an outer hollow light guide tube, an inner hollow light guide tube, an optical illuminator, an optical detector, an optically transparent fixing ring, and a thermo-optical modulation unit, where: The outer hollow light guide tube and the inner hollow light guide tube are coaxially nested, the inner hollow light guide tube is located inside the outer hollow light guide tube, and the optically transparent fixing rings are provided at both ends between the outer hollow light guide tube and the inner hollow light guide tube, forming an incident light transmission channel and a scattered light transmission channel; The incident light output end of the outer hollow light guide tube is connected to the heat transfer guide plate through the heat insulation reflective cup, and the thermo-optical modulation unit is arranged on the inner surface of the heat transfer guide plate; The thermo-optical modulation unit is composed of an optical microcavity layer and a nanoparticle layer. The optical microcavity layer is composed of a visible light reflection layer, a thermo-optical thin film layer, and a high refractive index layer. The visible light reflection layer is connected to the heat transfer guide plate, the thermo-optical thin film layer is connected to the visible light reflection layer, the high refractive index layer is connected to the thermo-optical thin film layer, the nanoparticle layer is located on the surface of the high refractive index layer or inside the thermo-optical thin film layer, and the thermo-optical modulation unit is arranged opposite to the inner hollow light guide tube; An optical illuminator is provided at the incident light input end of the outer hollow light guide tube, and the optical detector is provided at the scattered light output end of the inner hollow light guide tube. The optical illuminator is a ring array light-emitting light source; The optical detector is a unit photodetector or a planar array detector. The unit photodetector is a silicon photodiode, a silicon photocell, or a germanium diode, and the planar array detector is a CCD or a CMOS image sensor; The optical microcavity layer is an FP microcavity or a photonic crystal microcavity; The nanoparticle layer is a metal conductive particle or a medium particle with a high optical refractive index.

2. The device according to claim 1, characterized in that The metal conductive particle is Au, Al, Ag, or Ni, and the medium particle is Si, Ge, TiO2, or Al2O3.

3. The device according to claim 1, characterized in that, The thermo-optical thin film layer is composed of optically transparent polydimethylsiloxane or Si.

4. The device according to claim 1, characterized in that, The optical illuminator is composed of an LED or a semiconductor laser light source.

5. The device according to claim 1, characterized in that, The heat insulation reflective cup is made of low-thermal-conductivity glass material, and an optical reflection film is plated on the inner wall of the heat insulation reflective cup.

6. The device according to any one of claims 1 to 5, characterized in that, The base materials of the inner hollow light guide tube and the outer hollow light guide tube are both glass, and optical reflection films are plated on the inner walls of the inner hollow light guide tube and the outer hollow light guide tube.

7. A temperature measurement method, characterized in that, The method is applied to the temperature sensing device according to any one of claims 1 to 5, and includes: Contacting the target to be measured through the heat transfer guide plate of the temperature sensing device. The change in temperature causes the refractive index of the thermo-optical thin film layer in the optical microcavity layer to change, thereby causing the resonance spectrum of the optical microcavity layer to shift; Irradiating the thermo-optical modulation unit at a large angle through the optical illuminator of the temperature sensing device. The backscattering spectrum of the nanoparticles in the nanoparticle layer in the optical microcavity layer shifts when the temperature changes, generating backscattered light after the shift; Collecting the backscattered light and measuring the target scattered light intensity of the target wavelength in the backscattered light through the optical detector in the temperature sensing device; Determining the target electrical signal amplitude corresponding to the target scattered light intensity; Determine the temperature of the target to be measured based on the correspondence between the amplitude of the electrical signal corresponding to the target wavelength and the temperature and the target electrical signal amplitude.

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