Sensor device having a sensor chip and a bus bar

Abstract

Embodiments of the present application relate to a sensor device having a sensor chip and a busbar. A sensor device comprises: a busbar; a dielectric arranged on the busbar; and a sensor chip arranged on the dielectric, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the busbar, wherein a surface of the dielectric facing the busbar is spaced apart from the busbar in a region along the entire periphery of the dielectric.

Description

Technical Field

[0001] The present disclosure generally relates to a sensor device, and in particular, to a sensor device having a sensor chip and a bus bar. Background Art

[0002] The sensor device may comprise a sensor chip and a busbar. The busbar may be designed to conduct the current to be measured, and the sensor chip may be designed to detect the magnetic field induced by the current flowing through the busbar. Here, the measurement between the sensor chip and the busbar can be carried out in a contactless manner. Manufacturers of sensor devices are constantly working on improving their products. In particular, here, it is desirable to provide good sensor performance and reliable insulation between the sensor chip and the busbar. Summary of the invention

[0003] A number of different aspects relate to a sensor device. The sensor device comprises a busbar. The sensor device further comprises a dielectric arranged on the busbar. The sensor device further comprises a sensor chip arranged on the dielectric, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the busbar. In a region along the entire periphery of the dielectric, a surface of the dielectric facing the busbar is spaced apart from the busbar.

[0004] A number of different aspects relate to a sensor device. The sensor device comprises a lead frame, the lead frame comprising a first portion and a second portion, wherein the thickness of the first portion is greater than the thickness of the second portion. The sensor device further comprises a busbar formed by the first portion of the lead frame. The sensor device further comprises connecting leads formed by the second portion of the lead frame. The sensor device further comprises a sensor chip arranged on the connecting leads, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the busbar. In an orthographic projection of the sensor chip on the busbar, the sensor chip at least partially overlaps the busbar. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The sensor device according to the present disclosure is explained in detail below with the aid of the drawings. The elements shown in the drawings are not necessarily drawn to the correct scale relative to one another. The same reference numerals may denote the same components.

[0006] Figure 1 A cross-sectional side view of a sensor device 100 according to the present disclosure is schematically shown.

[0007] Figure 2 A cross-sectional side view of a sensor device 200 according to the present disclosure is schematically shown.

[0008] Figure 3A cross-sectional side view of a sensor device 300 according to the present disclosure is schematically shown.

[0009] Figure 4 A cross-sectional side view of a sensor device 400 according to the present disclosure is schematically shown.

[0010] Figure 5 A cross-sectional side view of a sensor device 500 according to the present disclosure is schematically shown.

[0011] Figure 6 A cross-sectional side view of a sensor device 600 according to the present disclosure is schematically shown.

[0012] Figure 7 A cross-sectional side view of a sensor device 700 according to the present disclosure is schematically shown.

[0013] Figure 8 A cross-sectional side view of a sensor device 800 according to the present disclosure is schematically shown.

[0014] Fig. 9 A cross-sectional side view of a sensor device 900 according to the present disclosure is schematically shown.

[0015] Fig.10 A cross-sectional side view of a sensor device 1000 according to the present disclosure is schematically shown.

[0016] Fig.11 A cross-sectional side view of a sensor device 1100 according to the present disclosure is schematically shown.

[0017] Fig.12 A cross-sectional side view of a sensor device 1200 according to the present disclosure is schematically shown.

[0018] Fig.13 A cross-sectional side view of a sensor device 1300 according to the present disclosure is schematically shown.

[0019] Fig.14 A perspective view of a sensor device 1400 according to the present disclosure is schematically shown.

[0020] Fig.15 A perspective view of a sensor device 1500 according to the present disclosure is schematically shown.

[0021] Fig.16 A perspective view of a sensor device 1600 according to the present disclosure is schematically shown.

[0022] Figure 17 includes 17A to 17C , 17A to 17CSchematically shown is a top view of busbars 1700A to 1700C that may be included in a sensor device according to the present disclosure.

[0023] Figure 18 includes Fig.18A and Fig.18B , Fig.18A and Fig.18B Schematically depicts a top view of busbars 1800A and 1800B that may be included in a sensor device according to the present disclosure. DETAILED DESCRIPTION

[0024] Figure 1 Schematically illustrates a cross-sectional side view of a sensor device 100 according to the present disclosure. The sensor device 100 is shown in a general manner in order to qualitatively describe various aspects of the present disclosure. The sensor device 100 may have Figure 1 For simplicity, the sensor device 100 may include additional aspects that are not shown. For example, the sensor device 100 may be extended in aspects described in combination with other sensor devices according to the present disclosure. Figure 1 The descriptions of can also be applied to other sensor devices described in this article.

[0025] The sensor device 100 may have a lead frame having a first part 2 and a second part 4. A first dielectric 6 and a second dielectric 8 stacked on top of each other may be arranged above the first part 2 of the lead frame. A sensor chip 10 having one or more sensor elements 12 may be arranged above the first dielectric 6. The aforementioned components may be fixed to each other by means of a fixing material 14. The sensor chip 10 may be electrically connected to the second part 4 of the lead frame via an electrical connection element 16. The components of the sensor device 100 may be at least partially encapsulated by an encapsulation material 18.

[0026] The lead frame can generally have one or more die pads and one or more connecting leads. At the beginning of manufacturing the sensor device and during the manufacturing of the sensor device, the die pads and the connecting leads can be mechanically connected to each other, for example, by a connecting piece. Here, in particular, the die pads and the connecting leads can be made of one piece. During the manufacturing process, some of the die pads and the connecting leads can be separated from each other, for example, by cutting off the connecting piece. During the manufacturing of the sensor package (sensor housing) or at the end of the manufacturing of the sensor package (sensor housing), in particular after the components of the sensor device to be manufactured are encapsulated with the encapsulation material, the die pads can be separated from the connecting leads. The separation can include one or more of the following: mechanically sawing, laser cutting, cutting, stamping, milling, etching. According to the above description, during the manufacturing of the sensor device 100, the first part 2 and the second part 4 of the lead frame can be mechanically connected to each other, but in the sensor device 100 that has been manufactured, the first part 2 and the second part 4 of the lead frame can be mechanically separated from each other. In particular, the lead frame may be electrically conductive. For example, the lead frame may be made completely of metal and / or a metal alloy, in particular of copper, a copper alloy, nickel, an iron-nickel alloy, aluminum, an aluminum alloy, steel, stainless steel.

[0027] The first part 2 of the lead frame can form a busbar 2 which can be designed to conduct the current to be measured. In particular, the first part or the busbar 2 can be constructed in one piece. The second part 4 of the lead frame can form a connecting lead 4. Figure 1 In the example of FIG. 4 , only one connecting lead 4 is shown. In other examples, the lead frame may have any number of other connecting leads 4. The thickness d1 of the busbar 2 may be greater than the thickness d2 of the connecting lead 4. In one example, the lead frame may be a dual gauge lead frame. In another example, the lead frame may include two lead frames with different thicknesses.

[0028] The sensor chip 10 or the sensor element 12 can be designed to detect a magnetic field induced by an electric current flowing through the bus 2. Based on the detected magnetic field or the detected magnetic flux density of the induced magnetic field, the intensity of the current can be determined. Here, in particular, the induced magnetic field can be detected in an electrically isolated manner or in a contactless manner. Here, in an orthographic projection of the sensor chip 10 or the sensor element 12 along the y direction onto the bus 2, the sensor chip 10 or the sensor element 12 can at least partially overlap with the bus 2. The physical signal detected by the sensor chip 10 can be converted into an electrical signal for further processing and can be transmitted to another component (not shown) via the electrical connection element 16 and the connecting lead 4 for further processing or evaluation. Figure 1 In the example of the embodiment, the electrical connection element 16 can be a wire. In another example, the electrical connection element can be formed by a ribbon or a clip.

[0029] exist Figure 1 In the example of , only one sensor element 12 of the sensor chip 10 is shown. In other examples, the sensor chip 10 may have one or more other sensor elements. For example, the sensor chip 10 may be a differential magnetic field sensor chip having two sensor elements. The sensor element 12 may be, for example, a Hall sensor element, a magnetoresistive sensor element, a vertical Hall sensor element or a fluxgate sensor element. The magnetoresistive xMR sensor element may be designed in the form of an AMR sensor element, a GMR sensor element or a TMR sensor element. Figure 1 In one example, the sensor element 12 may be arranged on a side of the sensor chip 10 facing away from the busbar 2 . In another example, the sensor element 12 may be arranged on a side of the sensor chip 10 facing the busbar 2 .

[0030] exist Figure 1 In the example of , the dielectrics 6, 8 can be mechanically connected to each other and form a common dielectric. In the area along the entire periphery of the dielectrics 6, 8, the face 50 of the (common) dielectric 6, 8 facing the busbar 2 can be spaced apart from the busbar 2. In other words, in Figure 1 In the embodiment of the present invention, the first dielectric 6 can extend or protrude beyond the second dielectric 8 in the region along the entire circumference of the first dielectric observed in the (negative) y direction. In this way, a base can be provided on which the sensor chip 10 can be arranged. In this case, in a plane perpendicular to the y direction, the dielectric 6 can be larger than the sensor chip 10 and the dielectric 8. Figure 1In the example of , the spacing between the first dielectric 6 and the bus bar 2 can be provided by the second dielectric 8 arranged between the bus bar 2 and the first dielectric 6. The distance d3 generated between the sensor chip 10 and the bus bar 2 can be in a range with an upper limit and a lower limit. The lower limit of the range can be about 5 microns or about 10 microns or about 15 microns or about 20 microns or about 30 microns or about 40 microns. The upper limit of the range can be about 2 mm or about 1.5 mm or about 1 mm or about 500 microns or about 200 microns or about 100 microns.

[0031] In the y-direction, the dielectrics 6, 8 may have substantially the same or different thicknesses. Here, the thickness of the dielectrics 6, 8 may be substantially constant along the x-direction. Viewed in the (negative) y-direction, the outline or shape of the second dielectric 8 may be (in particular completely) within the outline of the first dielectric 6. Similarly, viewed in the (negative) y-direction, the outline or shape of the sensor chip 10 may be (in particular completely) within the outline of the first dielectric 6. The outlines of the dielectrics 6, 8 may each have any shape, such as circular, oval, elliptical, square, rectangular, polygonal. The dielectrics 6, 8 may each include one of the following materials: ceramic, glass, silicone-based material, polymer-based material. Here, the dielectrics 6, 8 may be made of the same or different materials. In a specific example, one or both of the dielectrics 6, 8 may be designed as a small plate made of a dielectric material. form.

[0032] The creepage distance between the busbar 2 and the conductive area of ​​the sensor chip 12 may extend along the surface of the dielectric 6, 8. The creepage distance may be defined as the shortest distance between two conductive parts along the surface of a solid electrically insulating material. Of course, the creepage distance of the sensor device 100 may also depend on the shape and size of the dielectric 6, 8. For example, the creepage distance may extend along the surface of the dielectric 6, 8. Figure 1, the path shown in the form of dashed lines in the figure is extended by way of example. The creepage distance of the sensor device 100 can be increased by the shape of the dielectrics 6, 8 according to the present disclosure, and in particular by the spacing obtained between the busbar 2 and the dielectrics 6, 8 around the entire circumference of the dielectrics 6, 8. In this way, the robustness of the sensor device 100 with respect to leakage currents that may occur, for example, can be improved. It is also possible to provide an improved electrical isolation between the busbar 2 and the sensor chip 10. In this way, the risk of possible operational failures of the sensor device 100 can be avoided or at least reduced. When viewed in the (positive) y direction, the contour of the sensor chip 10 can be (in particular completely) within the contour of the first dielectric 6. By this relative arrangement, the creepage distance between the busbar 2 and the sensor chip 10 can also be increased. In another example, the dielectric 8 can also be replaced by a conductive element. In this way, the electrical isolation between the busbar 2 and the sensor chip 10 does not have to be lost, and the electrical isolation between the busbar 2 and the sensor chip 10 can always be provided by the dielectric 6. In particular, the conductivity of the element 8 may be chosen according to its influence on the quality of the magnetic measurement.

[0033] The fixing material 14 may include, for example, one or more of the following: carbon-filled DAF (die attach film), carbon-filled adhesive, weakly conductive glass solder (glaslot), non-conductive DAF, non-conductive adhesive, (especially non-silver-filled) conductive adhesive. The parts of the fixing material 14 arranged between the corresponding components of the sensor device 100 may be composed of the same or different materials.

[0034] exist Figure 1 In FIG. 1 , encapsulation material 18 of sensor device 100 is shown qualitatively by dashed lines. Figures 14 to 16 , an exemplary perspective view of a sensor device with a housing according to the present disclosure is shown. The encapsulation material 18 can encapsulate one or more components of the sensor device 100. Here, the busbar 2 and the connecting lead 4 can at least partially extend from the encapsulation material 18 so that the busbar 2 and the connecting lead 4 can be contacted from the outside of the encapsulation material 18. In particular, the encapsulation material 18 can be arranged in the interval between the dielectric 6, 8 and the busbar 2, and here, the electrical insulation between the busbar 2 and the sensor chip 10 is provided or improved. In particular, the encapsulation material 18 can be constructed in one piece. The encapsulation material 18 can include at least one of the following: a molding compound (Moldverbindung), a laminate, an epoxy resin, a filled epoxy resin, a glass fiber-filled epoxy resin, an imide, a thermoplastic, a thermosetting polymer, a polymer mixture.

[0035] In particular, the sensor device 100 may be a coreless sensor device, ie the sensor device 100 may not have or use a magnetic field concentrator for concentrating the magnetic field induced by the measurement current.

[0036] Figures 2 to 7 Schematically shows a cross-sectional side view of a sensor device 200 to 700 according to the present disclosure. The sensor device 200 to 700 may be at least partially connected to Figure 1 The sensor device 100 is similar to that of Figure 1 The description can also be applied to Figures 2 to 7 Each of the accompanying drawings.

[0037] exist Figure 2 In the example of FIG. 1 , the dielectric 6 and the bus bar 2 are already bonded Figure 1 The spacing in question can also be provided by the shape or shaping of the dielectric 6. By shaping, the dielectric 6 can have different thicknesses d4 and d5. Here, the transition between the sections of different thickness can have the shape of a step, for example. The dielectric 6 can be constructed in one piece. In one example, the dielectric can be a shaped or structured glass pane. In another example, the dielectric 6 can be made of a glass sheet that has been combined with a glass sheet. Figure 1 Made of one of the materials mentioned.

[0038] exist Figure 3 In the example of , the spacing between the dielectric 6 and the busbar 2 can be provided by the curvature or shaping or form of the busbar 2. The busbar 2 can have two parts or sections 20A, 20B, which can be located at different levels N1 and N2 relative to the y direction. The dielectric 6 can be arranged relative to the two sections 20A, 20B of the busbar 2 so that a spacing is generated between the dielectric 6 and the busbar 2. Figure 3 In the example of , the section 20C of the busbar 2 connecting two sections 20A, 20B located at different levels can form an angle α with the two sections 20A, 20B. Of course, the value of the angle α can depend on the desired spacing between the busbar 2 and the dielectric 6. For example, the angle α can have a value between about 10 degrees and about 90 degrees. The curvature of the busbar 2 can be provided by any process, for example by one or more processes of bending, stamping, die casting. Here, in particular, the busbar 2 can be constructed in one piece.

[0039] exist Figure 4In the example of , the bus 2 can have a first section 20A and a second section 20B, wherein the first section 20A can be connected to the dielectric 6, and the second section 20B can have a distance d6 relative to the dielectric 6. The first section 20A of the bus 2 can form a base 20A (or a base or a pillar). The spacing between the dielectric 6 and the bus 2 can be provided by the base 20A arranged on the bus 2, wherein the dielectric 6 can be mechanically connected to the base 20A. The base 20A can be constructed by any suitable process, for example, by one or more processes of bending, stamping, and die casting. Here, in particular, the bus 2 can be constructed in one piece. When viewed in the y direction, the base 20A can have any shape, such as circular, oval, elliptical, square, rectangular, polygonal.

[0040] exist Figure 5 In the example of , the spacing between the dielectric 6 and the busbar 2 can be provided by one or more recesses 22 (or holes or cavities or grooves) in the busbar 2. The dielectric 6 can be arranged relative to the recesses 22 so that a spacing according to the present disclosure is generated between the dielectric 6 and the busbar 2. Figure 5 In the side view of the y direction and / or viewed in the y direction, the recess 22 can have any shape, for example circular, oval, elliptical, square, rectangular, polygonal. The recess 22 in the busbar 2 can be provided by any suitable process, for example by one or more processes of stamping, die casting, etching. Here, in particular, the busbar 2 can be constructed in one piece.

[0041] and Figure 5 Similarly, in Figure 6 In the example of FIG. 1 , the spacing between the dielectric and the busbar 2 can be provided by one or more recesses 22 in the busbar 2. In other examples, the spacing can also be provided by other means described in conjunction with the above figures. Figure 6 In the example of , the dielectric may be constructed in the form of a Routable Molded Leadframe (Rt-MLF) 24. The Rt-MLF 24 may, for example, have one or more electrically insulating laminate layers extending in the x-direction, and conductive via connections extending through the laminate layers in the y-direction. Figure 6 , the electrically insulating section 24A and the conductive section 24B of the Rt-MLF 24 are exemplarily shown. The Rt-MLF 24 may have any number of additional electrically insulating sections or conductive sections. Figure 62. The electrically insulating section 24A of the Rt-MLF 24 may be free of conductive structures (e.g., via connections) and may provide electrical isolation between the busbar 2 and the sensor chip 10. The sensor chip 10 may be electrically connected to the connecting lead 4 via the first electrical connection element 16A, via the conductive section 24B and via the second electrical connection element 16B. In this way, wiring between the sensor chip 10 and the connecting lead 4 may be provided over a larger distance in the x-direction.

[0042] Figure 7 The sensor device 700 may be at least partially connected to Figure 6 Similar to the sensor device 600 of Figure 6 compared to, Figure 7 The dielectric in the can be constructed by a substrate (Substrat) 26 (or a circuit board). Figure 6 Similarly, Figure 7 The substrate 26 can have one or more electrically insulating sections 26A or electrically conductive sections 26B. In particular, the substrate 26 can have a rewiring structure on the upper side and / or the lower side of the substrate 26. Figure 6 Rewiring between the sensor chip 10 and the connecting leads 4 is provided in a similar manner.

[0043] Figure 8 Schematically illustrates a cross-sectional side view of a sensor device 800 according to the present disclosure. The sensor device 800 is shown in a general manner in order to qualitatively describe various aspects of the present disclosure. The sensor device 800 may have Figure 8 For simplicity, the sensor device 800 may include additional aspects that are not shown. For example, the sensor device 800 may be extended in aspects described in conjunction with other sensor devices according to the present disclosure. Figure 8 The descriptions of can also be applied to other sensor devices described in this article.

[0044] The sensor device 800 may have a lead frame having a first part 2 and a second part 4. A sensor chip 10 having one or more sensor elements 12 may be arranged above the second part 4. The sensor chip 10 may be fixed to the second part 4 of the lead frame by a fixing material 14. Figure 8In the example of the embodiment of the present invention, the fixing material 14 can be arranged on the entire surface of the lower side of the sensor chip 10. In other examples, the fixing material does not have to be deposited on the entire surface, but can, for example, be arranged only between the contact surface of the sensor chip 10 and the second part 4 of the lead frame. The sensor chip 10 can be electrically connected to the second part 4 of the lead frame via one or more electrical connection elements 16. One or more components of the sensor device 800 can be at least partially encapsulated by the encapsulation material 18. The components of the sensor device 800 can be similar to the corresponding components of the sensor device described above according to the present disclosure. Thus, for example, for Figure 1 The description of the components of the sensor device 100 also applies to Figure 8 Components of sensor device 800.

[0045] The first part 2 of the lead frame can form a busbar 2, which can in particular be constructed in one piece. The second part 4 of the lead frame can form one or more connecting leads 4. The thickness d1 of the busbar 2 can be greater than the thickness d2 of the connecting lead 4. The lead frame can be, for example, a dual-gauge lead frame.

[0046] The sensor chip 10 or the sensor element 12 can be designed to detect a magnetic field induced by a current flowing through the busbar 2. In this case, in an orthographic projection of the sensor chip 10 or the sensor element 12 along the y direction onto the busbar 2, the sensor chip 10 or the sensor element 12 can at least partially overlap with the busbar 2. For example, in particular in the case of a GMR sensor element, the position of the sensor element 12 relative to the busbar 2 can be used as in Figure 8 In another example, the sensor element 12 may be a Hall sensor element, and in particular, the Hall sensor element may be arranged closer to the edge of the busbar 2. Here, the sensor element 12 and the busbar 2 may only partially overlap, or may not overlap at all. Figure 8 In the example of , the sensor chip 10 can be arranged on the face of the connecting lead 4 away from the bus 2. The distance d3 between the sensor chip 10 and the bus 2 can be in a range with an upper limit and a lower limit. The lower limit of the range can be about 5 microns or about 10 microns or about 15 microns or about 20 microns or about 30 microns or about 40 microns. The upper limit of the range can be about 2 mm or about 1.5 mm or about 1 mm or about 500 microns or about 200 microns or about 100 microns.

[0047] The sensor chip 10 can be arranged on the connecting lead 4 only by a partial section of its lower side, while another section of the lower side can protrude beyond the connecting lead 4. In particular, the sensor element 12 can be arranged in this protruding area of ​​the sensor chip 10. The sensor chip 10 can be arranged on the connecting lead 4 so that the sensor element 12 is arranged above the bus bar 2 when viewed in the y direction. The connecting lead 4 can be curved or bent so that the sensor element 12 can be arranged above the bus bar 2 in the manner described. Figure 8 In the example of , the connecting lead 4 may have two sections, which may be located at different levels in the y direction. Alternatively or additionally, in another example, the busbar 2 and the connecting lead 4 may be arranged to be offset from each other in the y direction.

[0048] By the described arrangement of the sensor chip 10 on the connecting lead 4, the sensor element 12 can be placed precisely and contactlessly in the magnetic field generated by the measuring current flowing through the busbar 2. By the protruding section of the sensor chip 10, the creepage distance between the connecting lead 4 and the conductive part of the sensor chip 10 can also be increased. In addition, by the spacing d3 between the busbar 2 and the sensor chip 10 and the encapsulation material 18 arranged in this spacing, a reliable electrical isolation can be provided between the busbar 2 and the sensor chip 10. In particular, the encapsulation material 18 of the sensor device 800 can be constructed in one piece.

[0049] In particular, the sensor device 800 may be a coreless sensor device, ie, the sensor device 800 may not have or use a magnetic field concentrator for concentrating the magnetic field induced by the measurement current.

[0050] Figures 9 to 13 Schematically shows a cross-sectional side view of a sensor device 900 to 1300 according to the present disclosure. The sensor device 900 to 1300 may be at least partially connected to Figure 8 The sensor device 800 is similar to that of Figure 8 The description can also be applied to Figures 9 to 13 Each of the accompanying drawings.

[0051] exist Fig. 9 In the example of FIG. 1 , the sensor chip 10 can be arranged on the surface of the connecting lead 4 facing the busbar 2 . Figure 8 By comparison, this arrangement can provide a smaller distance between the busbar 2 and the sensor chip 10 or the sensor element 12. The arrangement shown, in which the sensor chip 10 is arranged between the thin connecting leads 4 and the thick busbar 2, can be regarded as special. In contrast, the arrangement of the sensor chip 10, the connecting leads 4 and the busbar 2 as in Figure 8 The relative arrangement shown in can be regarded as a standard variant of the components. Fig. 9 In one example, the sensor element 12 may face the busbar 2 . In another example, the sensor element 12 may face the connecting lead 4 .

[0052] exist Fig.10 In the example of , the sensor package (sensor housing) 28 is arranged on the connecting leads 4. The sensor package 29 can be, for example, a wafer-level package, such as an eWLB (embedded Wafer Level Ball Grid Array) package. The sensor package 28 can have a second packaging material 30, by which the sensor chip 10 can be packaged. The bus 2 and / or the connecting leads 4 can, in particular, be completely arranged outside the second packaging material 30. The second packaging material 30 can, for example, include at least one of the following: a molding compound, a laminate, an epoxy resin, a filled epoxy resin, a glass fiber-filled epoxy resin, an imide, a thermoplastic, a thermosetting polymer, a polymer mixture. The materials of the packaging materials 18 and 30 can be the same or different from each other. In particular, the packaging materials 18 and 30 can be manufactured in different packaging processes, or can be manufactured in packaging processes that are staggered in time. The sensor package 28 or the sensor chip 10 can be electrically connected to the connecting leads 4 , for example, via a solder connection 38 .

[0053] The sensor package 28 may have a rewiring layer 32. The rewiring layer 32 may include one or more conductor traces 34 in the form of a metal layer or metal traces. A plurality of dielectric layers 36 may be arranged between the plurality of conductor traces 34 to electrically insulate the conductor traces 34 from one another. In addition, the metal layers 34 arranged on different planes may be electrically connected to one another via a plurality of through holes (or vias). The conductor traces 34 of the rewiring layer 32 may provide a rewiring or redistribution function in order to electrically couple the terminals of the sensor chip 10 with the external terminals of the sensor package 28.

[0054] exist Fig.11In the example, the sensor package 28 can be fixed on the bus 2 by the fixing material 14. The sensor package 28 can be, for example, an SSO (Shrink Small Outline) package. The sensor package 28 may include a lead frame having a die pad 40 and connecting leads 4. The sensor chip 10 can be fixed on the die pad 40 by the fixing material 14. The sensor chip 10 can be electrically connected to the connecting leads 4 by electrical connection elements 16. The die pad 40, the sensor chip 10 and the connecting leads 4 can be encapsulated by the encapsulation material 30 of the sensor package 28. Here, the connecting leads 4 can extend from the encapsulation material 30 so as to enable electrical contact with the sensor chip 10 from the outside of the encapsulation material 30. In Fig.11 In the example of , the connecting leads 4 can be bent downwards, for example, for mounting the sensor device 1100 on a circuit board or printed circuit board (not shown). The busbar 2 can in particular be arranged completely outside the second packaging material 30 of the sensor package 28. The sensor package 28 and the busbar 2 can be packaged by a further packaging material 18, in particular, the further packaging material 18 can be constructed in one piece. Here, the connecting leads 4 and the busbar 2 can extend from the further packaging material 18 so that the connecting leads 4 and the busbar 2 can be electrically contacted from the outside of the further packaging material 18.

[0055] Fig.12 The sensor device 1200 may be at least partially similar to Fig.11 The sensor device 1100. Fig.11 In contrast, the sensor package 28 is spaced apart from the busbar 2. The encapsulation material 18 may be arranged in the region between the busbar 2 and the sensor package 28. Fig.12 In the example of FIG. 4 , the connecting lead 4A extending from the encapsulation material 18 is designed as a gull wing. The connecting lead 4A can be soldered to another connecting lead 4B, which can extend substantially in the x-direction.

[0056] Fig.13 The sensor device 1300 may be at least partially connected to Fig.12 In addition to the sensor package 28A arranged above the bus bar 2, another sensor package 28B may be arranged below the bus bar 2. Fig.13In the embodiment, the sensor packages 28A, 28B, which exemplarily have identical components, can be constructed in a mirror-inverted manner. In one example, the sensor chips 10A, 10B of the sensor packages 28A, 28B can be redundant sensor chips based on the same sensor technology. In another example, the sensor chips can be based on different sensor technologies and thereby provide a diversity of sensor measurements. The connecting leads 4A and 4B extending from the respective packaging materials 30A and 30B of the sensor packages 28A and 28B and extending from the further packaging material 18 can be welded to a further connecting lead 4C, which can extend substantially in the x-direction.

[0057] Figures 14 to 16 Schematically, perspective views of sensor devices or sensor packages 1400 to 1600 according to the present disclosure are shown. The sensor devices 1400 to 1600 may be at least partially similar to each of the sensor devices described above. The description of the above figures also applies to Figures 14 to 16 Each of the accompanying drawings.

[0058] Fig.14 A sensor package 1400 is shown having a packaging material 18, which can form an outer housing. Components as described in conjunction with the above figures can be arranged in the packaging material 18. A bus 2 and a plurality of connecting leads 4 can extend from the packaging material 18. The bus 2 can, for example, be designed to be U-shaped and extend substantially planarly or in a plane. Two end components 44A, 44B of the bus 2 can extend from a side 42A of the packaging material 18 and form input terminals and output terminals for the current to be measured. The bus 2 can also at least partially extend from opposite sides 42B, 42D of the packaging material 18. The connecting leads 4 can extend from a side 42C of the packaging material 18 and be designed to be substantially straight. Fig.14 In the embodiment, five connecting leads 4 are shown by way of example. The number of connecting leads 4 may depend on the respective application and may be different from Fig.14 .

[0059] Fig.15 The sensor package 1500 can be used with Fig.14 Similar to the sensor package 1400 of FIG. Fig.14 In contrast, the terminal parts 44A, 44B connecting the lead wire 4 and the busbar 2 are Fig.15 For example, the sensor package 1500 may be mechanically and electrically connected to a circuit board (not shown) disposed below the sensor package 1500 through the bent connection leads 4 and the bent end parts 44A, 44B.

[0060] Fig.16 The sensor package 1600 can be used with Fig.15 Similar to the sensor package 1500 of FIG. Fig.15 In contrast, one or both of the end pieces 44A, 44B of the busbar 2 may be designed to be comb-shaped, and a plurality of terminals 46 are formed due to the comb-shaped structure. Fig.16 In FIG. 4 , four terminals 46 are exemplarily shown. The number of terminals 46 may depend on the respective application and may be different in other examples.

[0061] 17 and 18 schematically show top views of a busbar that may be included in the above-described sensor device according to the present disclosure.

[0062] Fig.17A A busbar 1700A and a sensor chip 10 arranged above the busbar 1700A are shown, the sensor chip 10 having two sensor elements 12A, 12B. The sensor chip 10 can in particular be a differential sensor chip and the sensor elements 12A, 12B can in particular be Hall sensor elements. Fig.17A The busbar 1700A in the example of FIG. 4 may have two cutouts 48A, 48B, so that Fig.17A In a top view of the busbar, the busbar may be substantially S-shaped. In other examples, the busbar may have other numbers of cutouts. Thus, for example, current flowing from left to right Fig.17A The measuring current of busbar 1700A can have a substantially S-shaped course and here it circulates counterclockwise around sensor element 12A on the left and clockwise around sensor element 12B on the right. Due to this course of the measuring current, it can generate a differential magnetic field with opposite directions at the location of sensor elements 12A, 12B, based on which the measuring current can be detected or determined. Fig.17A In the top view of , the busbar 1700A (or the current course of the measuring current) may not overlap with the sensor elements 12A, 12B (at least partially). In this way, it can be ensured that the magnetic field induced at the position of the sensor elements 12A, 12B has a component perpendicular to the corresponding Hall sensor element. In one example, the busbar 1700A may not overlap with the sensor elements 12A, 12B at all. In another example, the busbar 1700A may overlap with the sensor elements 12A, 12B to a small extent. Here, the busbar 1700A may not overlap with the sensor elements 12A, 12B by at least 80%, at least 85%, at least 90%, or at least 95%.

[0063] and Fig.17ASimilarly, Fig. 17B The busbar 1700B can be used in conjunction with a Hall sensor element. Fig.17A In comparison, Fig. 17B In the example of , the cutouts 48A and 48B do not have to be arranged in a way that they are offset from each other in the lateral direction, but can be aligned with each other. The sensor elements of the sensor chip and the bus 1700B can be arranged in a (at least partially) non-overlapping manner. In one example, the sensor chip can have two Hall sensor elements, which can be arranged at the inner ends of the cutouts 48A, 48B. Here, the measurement current passing through the bus 1700B, for example, passes from the lower left through the sensor element or between the cutouts 48A, 48B to the upper right.

[0064] Fig. 17C The busbar 1700C can have a single cutout 48 and be used in combination with a Hall sensor element. The sensor element can be arranged, for example, at the inner end of the cutout 48. For example, the measurement current can run from the upper left around the cutout 48 to the upper right.

[0065] Fig.18A A busbar 1800A and a sensor chip 10 arranged above the busbar are shown, the sensor chip 10 having two sensor elements 12A, 12B. The sensor chip 10 can in particular be a differential sensor chip, and the sensor elements 12A, 12B can in particular be magnetoresistive sensor elements or vertical Hall sensor elements or fluxgate sensor elements. For example, the sensor elements 12A, 12B can be magnetoresistive xMR sensor elements, in particular AMR sensor elements, GMR sensor elements or TMR sensor elements. Fig.18A In the example of FIG. 1 , the busbar 1800A may have three cutouts 48A to 48C such that Fig.18A In the top view of FIG. 1 , the busbar 1800A and the measurement current can basically form a serpentine shape. In other examples, the busbar can have other numbers of cutouts. Fig.18A The mentioned sensor element type can be particularly sensitive to "in-plane" magnetic field components. The sensor elements 12A, 12B can be aligned with the busbar 1800A or the measurement current path. In other words, the sensor elements 12A, 12B can be arranged directly on the path of the busbar 1800A or the measurement current path. That is, in Fig.18A In the top view, busbar 1800A may overlap (particularly completely) with sensor elements 12A, 12B, respectively.

[0066] and Fig.18A Similarly, Fig.18BThe busbar 1800B can be used in combination with an xMR sensor element. Here, the sensor element can be arranged at the cutout 48, wherein the busbar 1800B can overlap the sensor element (in particular completely).

[0067] It should be noted that the examples described herein according to the present disclosure may be combined with each other in any manner. For example, the second dielectric 8 (see Figure 1 ) and the recess 22 in the busbar 2 (see Figure 5 ) are used together to provide dielectric 6 and bus 2 (see Figures 1 to 7 In another example, the busbar 2 may be curved (see Figure 3 ), and additionally has a recess 22 (see Figure 5 ). For the sake of simplicity, all possible combinations of aspects described in the present disclosure are not described in detail herein.

[0068] Example

[0069] The sensor device is explained below using examples.

[0070] Example 1 is a sensor device comprising: a bus; a dielectric arranged on the bus; and a sensor chip arranged on the dielectric, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the bus, wherein in an area along the entire periphery of the dielectric, a surface of the dielectric facing the bus is spaced apart from the bus.

[0071] Example 2 is the sensor device according to Example 1, wherein the busbar includes a first section and a second section, wherein the first section is connected to the dielectric, and the second section has a distance relative to the dielectric.

[0072] Example 3 is a sensor device according to example 1 or 2, wherein the busbar is designed in one piece.

[0073] Example 4 is a sensor device according to any of the above examples, wherein the spacing between the dielectric and the bus bar is provided by a recess in the bus bar.

[0074] Example 5 is a sensor device according to any of the above examples, wherein the spacing between the dielectric and the busbar is provided by a base arranged on the busbar, wherein the dielectric is mechanically connected to the base.

[0075] Example 6 is a sensor device according to any of the above examples, wherein the spacing between the dielectric and the bus bar is provided by a curvature of the bus bar.

[0076] Example 7 is a sensor device according to any of the above examples, wherein the spacing between the dielectric and the bus bar is provided by another dielectric arranged between the bus bar and the dielectric.

[0077] Example 8 is a sensor device according to any of the above examples, wherein the spacing between the dielectric and the bus bar is provided by shaping the dielectric so that the dielectric has different thicknesses.

[0078] Example 9 is the sensor device according to any of the above examples, wherein the distance between the sensor chip and the bus bar is in the range of 5 micrometers to 2 millimeters.

[0079] Example 10 is a sensor device according to any one of the above examples, further comprising: a packaging material constructed in one piece, wherein the bus bar, the dielectric, and the sensor chip are encapsulated by the packaging material.

[0080] Example 11 is the sensor device according to Example 10, wherein the encapsulation material is disposed in a space between the dielectric and the bus bar.

[0081] Example 12 is a sensor device according to any one of the above examples, further comprising: a lead frame, the lead frame comprising a first part and a second part, wherein the thickness of the first part is greater than the thickness of the second part, wherein the bus is formed by the first part of the lead frame, and wherein the second part of the lead frame forms a connecting lead electrically connected to the sensor chip.

[0082] Example 13 is a sensor device according to any of the above examples, wherein the sensor device does not have a magnetic field concentrator.

[0083] Example 14 is a sensor device according to any of the above examples, wherein the dielectric comprises at least one of the following materials: ceramic, glass, silicone-based material, polymer-based material.

[0084] Example 15 is a sensor device, comprising: a lead frame, the lead frame comprising a first part and a second part, wherein the thickness of the first part is greater than the thickness of the second part; a bus formed by the first part of the lead frame; connecting leads formed by the second part of the lead frame; and a sensor chip arranged on the connecting leads, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the bus, wherein in an orthographic projection of the sensor chip on the bus, the sensor chip at least partially overlaps with the bus.

[0085] Example 16 is a sensor device according to Example 15, further comprising: a packaging material constructed in one piece, wherein the bus bar, the connecting leads, and the sensor chip are packaged by the packaging material, and the packaging material is arranged between the bus bar and the sensor chip.

[0086] Example 17 is the sensor device according to Example 15 or 16, further comprising: another packaging material, wherein the sensor chip is packaged by the another packaging material, and the bus bar is arranged outside the another packaging material.

[0087] Example 18 is the sensor device according to any one of Examples 15 to 17, wherein the sensor chip is arranged on a face of the connection leads that is remote from the bus bar.

[0088] Example 19 is the sensor device according to any one of Examples 15 to 17, wherein the sensor chip is arranged on a surface of the connecting leads facing the busbar.

[0089] Example 20 is the sensor device according to any one of Examples 15 to 19, wherein a distance between the sensor chip and the bus bar is in a range of 5 micrometers to 2 millimeters.

[0090] Although specific embodiments are shown and described herein, it is apparent to those of ordinary skill in the art that multiple alternative and / or equivalent embodiments may replace the specific embodiments shown and described without departing from the scope of the present disclosure. This application is intended to cover all modifications or variations of the specific embodiments discussed herein. Therefore, the present disclosure is limited only by the claims and the equivalents of the claims.

Claims

1. A sensor device, comprising: Busbar; Connect the leads; a dielectric disposed on the bus bar; a sensor chip arranged on the dielectric and electrically connected to the connecting leads, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the busbar, wherein a surface of the dielectric facing the busbar is spaced apart from the busbar in a region along the entire periphery of the dielectric; as well as A one-piece encapsulation material, wherein the busbar, the dielectric, the sensor chip, and the connecting leads are encapsulated by the encapsulation material, wherein the busbar and the connecting leads each have a portion that protrudes beyond the encapsulation material. 2 . The sensor device according to claim 1 , wherein the busbar comprises a first section and a second section, wherein the first section is connected to the dielectric and the second section has a distance relative to the dielectric. 3 . The sensor device according to claim 1 , wherein the busbar is designed in one piece. 4 . The sensor device according to claim 1 , wherein the spacing between the dielectric and the busbar is provided by a recess in the busbar. 5 . The sensor device according to claim 1 , wherein the spacing between the dielectric and the busbar is provided by a base arranged on the busbar, wherein the dielectric is mechanically connected to the base. 6 . The sensor device according to claim 1 , wherein the spacing between the dielectric and the busbar is provided by a curvature of the busbar.

7. The sensor device according to any of the preceding claims, wherein the spacing between the dielectric and the busbar is provided by a further dielectric arranged between the busbar and the dielectric. 8 . The sensor device according to claim 1 , wherein the spacing between the dielectric and the busbar is provided by shaping the dielectric such that the dielectric has different thicknesses. 9 . The sensor device according to claim 1 , wherein the distance between the sensor chip and the busbar is in the range of 5 μm to 2 mm. 10 . The sensor device of claim 1 , wherein the encapsulation material is arranged in a space between the dielectric and the bus bar.

11. The sensor device according to any one of the preceding claims, further comprising: a lead frame, the lead frame comprising a first portion and a second portion; wherein the thickness of the first portion is greater than the thickness of the second portion; wherein the busbar is formed by the first portion of the lead frame; and The second portion of the lead frame forms the connecting lead electrically connected to the sensor chip. 12 . The sensor device according to claim 1 , wherein the sensor device is free of a magnetic field concentrator.

13. The sensor device according to any of the preceding claims, wherein the dielectric comprises at least one of the following materials: ceramic, glass, silicone-based material, polymer-based material.

14. A sensor device comprising: A lead frame comprising a first portion and a second portion, wherein a thickness of the first portion is greater than a thickness of the second portion; a busbar formed by the first portion of the lead frame; a connecting lead formed by the second portion of the lead frame; a sensor chip arranged on a face of the connecting lead facing the busbar, wherein the sensor chip is designed to detect a magnetic field induced by a current flowing through the busbar, wherein in an orthographic projection of the sensor chip on the busbar, the sensor chip at least partially overlaps the busbar; as well as A one-piece encapsulation material, wherein the busbar, the connecting leads, and the sensor chip are encapsulated by the encapsulation material and the encapsulation material is arranged between the busbar and the sensor chip, wherein the busbar and the connecting leads each have a portion protruding from the encapsulation material.

15. The sensor device according to claim 14, further comprising: Another packaging material, wherein the sensor chip is packaged by the another packaging material, and the busbar is arranged outside the another packaging material. 16 . The sensor device according to claim 14 , wherein the distance between the sensor chip and the busbar is in the range of 5 μm to 2 mm.

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