Magnetic memory device including magnetic tunnel junction

Abstract

A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern having a perpendicular magnetization direction pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first magnetic pattern and the second magnetic pattern may have a different respective in-plane magnetization direction.

Description

Technical Field

[0001] The present disclosure relates to semiconductor devices, and in particular, to a magnetic memory device including a magnetic tunnel junction. Background Art

[0002] As electronic devices with high speed and / or low power consumption characteristics are increasingly required for various applications, there is a corresponding increase in demand for semiconductor memory devices with faster operating speeds and / or lower operating voltages. Magnetic memory devices have been proposed to meet this demand. For example, magnetic memory devices can provide technical advantages such as high speed and / or non-volatility, and therefore, magnetic memory devices are becoming potential next generation memory devices.

[0003] Typically, a magnetic memory device includes a magnetic tunnel junction (MTJ). The MTJ includes two magnetic layers and an insulating layer interposed between them. The resistance of the MTJ varies depending on the magnetization direction of the magnetic layers. For example, the resistance of the MTJ is higher when the magnetization directions of the magnetic layers are antiparallel to each other than when they are parallel to each other. Such a difference in resistance can be used for data storage operations of the magnetic memory device.

[0004] However, more research is still needed to achieve magnetic memory devices with improved thermal stability and reduced switching current, including reduction or scaling down of the magnetic memory devices in size. Summary of the invention

[0005] Aspects of the present disclosure provide a magnetic memory device having improved thermal stability characteristics and reduced switching current characteristics.

[0006] According to some embodiments of the inventive concept, a magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern having a perpendicular magnetization direction pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first magnetic pattern and the second magnetic pattern may have a different respective in-plane magnetization direction.

[0007] According to some embodiments of the inventive concept, a magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern having a perpendicular magnetization direction pinned to a specific direction, and the free magnetic pattern may have a magnetization direction switchable between parallel and antiparallel to the perpendicular magnetization direction of the at least one pinned pattern. The in-plane magnetic structure may include a first magnetic pattern, a second magnetic pattern, and a first non-magnetic pattern therebetween. The magnetization direction of each of the first magnetic pattern and the second magnetic pattern may be perpendicular to the magnetization direction of the free magnetic pattern, and the first magnetic pattern and the second magnetic pattern may be antiferromagnetically coupled to each other through the first non-magnetic pattern.

[0008] According to some embodiments of the inventive concept, a magnetic memory device may include an interconnect structure on a substrate, the interconnect structure including interconnect lines and contacts between the interconnect lines, the interconnect lines being spaced apart from each other in a first direction perpendicular to a top surface of the substrate; a lower contact plug on the interconnect structure and connected to an uppermost interconnect line among the interconnect lines; a magnetic tunnel junction pattern on the lower contact plug; a bottom electrode between the lower contact plug and the magnetic tunnel junction pattern; a top electrode on the magnetic tunnel junction pattern; an in-plane magnetic structure between the magnetic tunnel junction pattern and the top electrode; and a spacer between the magnetic tunnel junction pattern and the in-plane magnetic structure. The in-plane magnetic structure may include a first magnetic pattern, a second magnetic pattern on the first magnetic pattern, and a non-magnetic pattern between the first magnetic pattern and the second magnetic pattern. The first magnetic pattern and the second magnetic pattern may include at least one of nickel, iron, and cobalt. The thickness of each of the first magnetic pattern and the second magnetic pattern may be greater than or equal to 0.5 nm and may be less than 10 nm, and the thickness of the first magnetic pattern may be less than the thickness of the second magnetic pattern. The magnetocrystalline anisotropy energy of each of the first magnetic pattern and the second magnetic pattern may be greater than 0 erg / cm 3 and can be less than 1×10 7 erg / cm 3 . BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The present disclosure will be more clearly understood from the following description of example embodiments of the inventive concepts presented herein in conjunction with the accompanying drawings.The accompanying drawings depict non-limiting example embodiments as described herein.

[0010] Figure 1A are cross-sectional views illustrating magnetic memory devices according to some embodiments of the inventive concept.

[0011] Figure 1B yes Figure 1AAn enlarged view of portion 'aa'.

[0012] Figure 2A and Figure 2B is a cross-sectional view illustrating a change in the magnetization direction of a magnetic memory device in a write operation.

[0013] Figure 3 are cross-sectional views illustrating magnetic memory devices according to some embodiments of the inventive concept.

[0014] Figure 4 are cross-sectional views illustrating magnetic memory devices according to some embodiments of the inventive concept.

[0015] Figure 5 are cross-sectional views illustrating magnetic memory devices according to some embodiments of the inventive concept.

[0016] Fig. 6A and Figure 6B 2 is a cross-sectional view illustrating a method of manufacturing a magnetic memory device according to some embodiments of the inventive concept. DETAILED DESCRIPTION

[0017] A semiconductor device according to the inventive concept will be described herein with reference to the accompanying drawings.

[0018] Figure 1A are cross-sectional views illustrating magnetic memory devices according to some embodiments of the inventive concept. Figure 1B It is shown Figure 1A An enlarged view of portion 'aa'.

[0019] Reference Figure 1A and Figure 1B , the lower interlayer insulating layer 102 may be on the substrate 100. The substrate 100 may be a semiconductor substrate such as silicon (Si), silicon on insulator (SOI), silicon germanium (SiGe), germanium (Ge), and gallium arsenide (GaAs) wafers. A selection element (not shown) may be provided on the substrate 100, and the lower interlayer insulating layer 102 may cover the selection element (not shown). The selection element may be a field effect transistor or a diode. The lower interlayer insulating layer 102 may be formed of at least one of oxide, nitride, and / or oxynitride, or include at least one of oxide, nitride, and / or oxynitride.

[0020] The lower contact plug 104 may be disposed in the lower interlayer insulating layer 102. The lower contact plug 104 may be formed to penetrate the lower interlayer insulating layer 102 and may be electrically coupled to a terminal of a corresponding one of the selection elements. The lower contact plug 104 may include at least one of a doped semiconductor material (e.g., doped silicon), a metal (e.g., tungsten, titanium, and / or tantalum), a conductive metal nitride (e.g., titanium nitride, tantalum nitride, and / or tungsten nitride), and a metal semiconductor compound (e.g., metal silicide).

[0021] The bottom electrode BE may be on the lower interlayer insulating layer 102. The bottom electrode BE may include a conductive material. As an example, the bottom electrode BE may be formed of or include at least one conductive metal nitride (e.g., titanium nitride and tantalum nitride).

[0022] The magnetic tunnel junction pattern MTJ may be on the lower interlayer insulating layer 102 and may be electrically connected to the lower contact plug 104 through the bottom electrode BE. The bottom electrode BE may be interposed between the magnetic tunnel junction pattern MTJ and the lower contact plug 104. The magnetic tunnel junction pattern MTJ may include a vertical magnetic structure VMS, a free magnetic pattern 150, and a tunnel barrier pattern TBP therebetween.

[0023] The vertical magnetic structure VMS may include a first pinned pattern 120, a second pinned pattern 140 between the first pinned pattern 120 and the tunnel barrier pattern TBP, and an exchange coupling pattern 130 between the first pinned pattern 120 and the second pinned pattern 140. In other words, the first pinned pattern 120, the exchange coupling pattern 130, the second pinned pattern 140, and the tunnel barrier pattern TBP may be sequentially stacked with the first pinned pattern being closest to the substrate 100.

[0024] A first surface of the first pinned pattern 120 may be in contact with a first surface of the exchange coupling pattern 130. A first surface of the second pinned pattern 140 may be in contact with a second surface of the exchange coupling pattern 130, wherein the second surface of the exchange coupling pattern 130 is opposite to the first surface of the exchange coupling pattern 130. The first pinned pattern 120 and the second pinned pattern 140 may be antiferromagnetically coupled to each other through coupling with the exchange coupling pattern 130.

[0025] Each of the first pinned pattern 120 and the second pinned pattern 140 may have a perpendicular magnetization direction. The perpendicular magnetization direction 120m of the first pinned pattern 120 and the perpendicular magnetization direction 140m of the second pinned pattern 140 may be perpendicular to the interface between the tunnel barrier pattern TBP and the free magnetic pattern 150. The perpendicular magnetization direction 120m of the first pinned pattern 120 and the perpendicular magnetization direction 140m of the second pinned pattern 140 may be pinned to different directions, respectively. The perpendicular magnetization direction 120m of the first pinned pattern 120 may be antiparallel to the perpendicular magnetization direction 140m of the second pinned pattern 140.

[0026] The first pinned pattern 120 and the second pinned pattern 140 may each be a ferromagnetic pattern including a ferromagnetic element. The first pinned pattern 120 and the second pinned pattern 140 may include at least one of: i) a perpendicular magnetic material (e.g., CoFeTb, CoFeGd, and CoFeDy), ii) a perpendicular magnetic material of an L10 structure, iii) a CoPt-based material having a close-packed hexagonal lattice structure, iv) a multilayer structure in which ferromagnetic layers and non-magnetic layers are alternately stacked, and v) a cobalt-based full-Heusler alloy.

[0027] The perpendicular magnetic material of the L10 structure may include at least one of L10 FePt, L10 FePd, L10 CoPd, and L10 CoPt.

[0028] The multilayer structure may include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, and (CoCr / Pd)n, where “n” is a natural number equal to or greater than 2. Here, the first pinned pattern 120 and the second pinned pattern 140 may be thicker than the free magnetic pattern 150 or may have a coercive force greater than that of the free magnetic pattern 150.

[0029] Cobalt-based full-Heusler alloys may include Co 2 FeSi、Co 2 MnSi、Co 2 FeMnSi、Co 2 FelAl and Co 2 The exchange coupling pattern 130 may include a non-magnetic material exhibiting an antiferromagnetic coupling characteristic. For example, the exchange coupling pattern 130 may include at least one of iridium (Ir), chromium (Cr), and ruthenium (Ru).

[0030] The tunnel barrier pattern TBP may include at least one of magnesium oxide, titanium oxide, aluminum oxide, magnesium zinc oxide, magnesium boron oxide, titanium nitride, and vanadium nitride. For example, the tunnel barrier pattern TBP may include magnesium oxide (MgO) having a NaCl crystal structure.

[0031] The free magnetic pattern 150 may be in contact with the tunnel barrier pattern TBP. Due to the magnetic anisotropy caused by the contact between the free magnetic pattern 150 and the tunnel barrier pattern TBP, the free magnetic pattern 150 may have a perpendicular magnetization characteristic. The perpendicular magnetization direction 150m of the free magnetic pattern 150 may be changed to be parallel or anti-parallel to the perpendicular magnetization direction 140m of the second pinned pattern 140. When the perpendicular magnetization direction 140m of the second pinned pattern 140 is parallel to the perpendicular magnetization direction 150m of the free magnetic pattern 150, the magnetic tunnel junction pattern MTJ may have a low resistance value. On the contrary, when the perpendicular magnetization direction 140m of the second pinned pattern 140 is anti-parallel to the perpendicular magnetization direction 150m of the free magnetic pattern 150, the magnetic tunnel junction pattern MTJ may have a high resistance value. The free magnetic pattern 150 may include a magnetic material that may induce perpendicular magnetic anisotropy at the interface between the free magnetic pattern 150 and the tunnel barrier pattern TBP. The free magnetic pattern 150 may be formed of or include, for example, cobalt iron boron (CoFeB).

[0032] The seed pattern 110 may be interposed between the magnetic tunnel junction pattern MTJ and the bottom electrode BE. The seed pattern 110 may include a material that allows a magnetic layer constituting the magnetic tunnel junction pattern MTJ to grow in a crystal structure. The seed pattern 110 may be formed of or include at least one of chromium (Cr), iridium (Ir), and ruthenium (Ru).

[0033] The in-plane magnetic structure HMS may be on the magnetic tunnel junction pattern MTJ. The in-plane magnetic structure HMS will be described in more detail below.

[0034] The spacer SP may be interposed between the free magnetic pattern 150 and the in-plane magnetic structure HMS. The spacer SP may include at least one of a metallic material and a metal oxide. The metallic material may include, for example, tantalum (Ta). The metal oxide may include at least one of magnesium oxide and tantalum oxide.

[0035] The top electrode TE may be on the in-plane magnetic structure HMS. The magnetic tunnel junction pattern MTJ and the in-plane magnetic structure HMS may be interposed between the bottom electrode BE and the top electrode TE, wherein the in-plane magnetic structure is closer to the top electrode TE and the magnetic tunnel junction pattern MTJ is closer to the bottom electrode BE. The top electrode TE may include a conductive material. As an example, the top electrode TE may include at least one of a metallic material (e.g., tantalum (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), and titanium (Ti)) and a conductive metal nitride (e.g., tantalum nitride (TaN) and titanium nitride (TiN)).

[0036] The upper interlayer insulating layer 106 may be on the lower interlayer insulating layer 102 and may cover the side surfaces of the bottom electrode BE, the seed pattern 110, the magnetic tunnel junction pattern MTJ, the in-plane magnetic structure HMS, and the top electrode TE. The upper interlayer insulating layer 106 may be formed of at least one of oxide, nitride, and / or oxynitride, or include at least one of oxide, nitride, and / or oxynitride. The wire 108 may be on the upper interlayer insulating layer 106. The wire 108 may be connected to the in-plane magnetic structure HMS and the magnetic tunnel junction pattern MTJ through the top electrode TE. The wire 108 may be formed of at least one of a metallic material (e.g., titanium, tantalum, copper, aluminum, and tungsten) and a conductive metal nitride (e.g., titanium nitride and tantalum nitride), or include at least one of a metallic material (e.g., titanium, tantalum, copper, aluminum, and tungsten) and a conductive metal nitride (e.g., titanium nitride and tantalum nitride). In some embodiments, the wire 108 may be used as a bit line.

[0037] The in-plane magnetic structure HMS may include a first magnetic pattern 160 , a second magnetic pattern 180 between the first magnetic pattern 160 and the top electrode TE, and a non-magnetic pattern 170 between the first magnetic pattern 160 and the second magnetic pattern 180 .

[0038] A first surface of the first magnetic pattern 160 may contact a first surface of the spacer SP, and a second surface of the first magnetic pattern 160 may contact a first surface of the nonmagnetic pattern 170. A first surface of the second magnetic pattern 180 may contact a second surface of the nonmagnetic pattern 170. The first magnetic pattern 160 and the second magnetic pattern 180 may be antiferromagnetically coupled to each other through the nonmagnetic pattern 170.

[0039] Each of the first magnetic pattern 160 and the second magnetic pattern 180 may have an in-plane magnetization direction. The in-plane magnetization direction 160m of the first magnetic pattern 160 and the in-plane magnetization direction 180m of the second magnetic pattern 180 may be parallel to the interface between the spacer SP and the free magnetic pattern 150. The in-plane magnetization direction 160m of the first magnetic pattern 160 and the in-plane magnetization direction 180m of the second magnetic pattern 180 may be antiparallel to each other. The magnetization direction 160m of the first magnetic pattern 160 and the magnetization direction 180m of the second magnetic pattern 180 may both be perpendicular to both the magnetization direction 120m of the first pinned pattern 120 and the magnetization direction 140m of the second pinned pattern 140.

[0040] In some embodiments, the exchange coupling constant (Jex) between the first magnetic pattern 160 and the second magnetic pattern 180 may be -0.1 erg / cm 2 To -2erg / cm 2 within the range.

[0041] Each of the first magnetic pattern 160 and the second magnetic pattern 180 may include a soft magnetic material. As an example, each of the first magnetic pattern 160 and the second magnetic pattern 180 may include at least one of iron (Fe), cobalt (Co), and nickel (Ni). In some embodiments, the first magnetic pattern 160 and the second magnetic pattern 180 may include cobalt iron boron (CoFeB). The composition ratio of cobalt iron boron (CoFeB) in the first magnetic pattern 160 and the second magnetic pattern 180 may be different from the composition ratio of cobalt iron boron (CoFeB) of the free magnetic pattern 150.

[0042] As an example, the composition ratio of boron in the first and second magnetic patterns 160 and 180 may be higher than that in the free magnetic pattern 150. The first and second magnetic patterns 160 and 180 having high boron composition ratios may have crystallinity that is worse than that of the free magnetic pattern 150. In this specification, the term "crystallinity" is used to indicate a degree of regularity of atomic arrangement.

[0043] The first and second magnetic patterns 160 and 180 may have better non-crystallinity than the free magnetic pattern 150 .

[0044] The non-magnetic pattern 170 may include a non-magnetic material exhibiting antiferromagnetic coupling characteristics. As an example, the non-magnetic pattern 170 may be formed of or include at least one of iridium (Ir), chromium (Cr), and ruthenium (Ru).

[0045] Each of the first magnetic pattern 160 and the second magnetic pattern 180 may have an erg / cm 3and less than 1×10 7 erg / cm 3 The magnetocrystalline anisotropy energy is the energy required to fix the spin direction, which depends on the structure and direction of the crystal orientation. When the magnetocrystalline anisotropy energy of each of the first magnetic pattern 160 and the second magnetic pattern 180 is greater than 0erg / cm 3 and less than 1×10 7 erg / cm 3 In the range of , it is possible to relatively easily realize the in-plane magnetization direction of the first magnetic pattern 160 and the second magnetic pattern 180. If the magnetocrystalline anisotropy energy is greater than or equal to 1×10 7 erg / cm 3 , the first magnetic pattern 160 and the second magnetic pattern 180 may have perpendicular or nearly perpendicular magnetization directions. If the magnetocrystalline anisotropy energy is 0 erg / cm 3 , then the magnetization direction can have almost no perpendicular component even when a write current is applied thereto.

[0046] The magnetocrystalline anisotropy energy may be related to the perpendicular crystal magnetic anisotropy causing perpendicular magnetization and the shape magnetic anisotropy causing in-plane magnetization. In the first magnetic pattern 160 and the second magnetic pattern 180, the shape magnetic anisotropy may be stronger than the perpendicular magnetic anisotropy. Therefore, the first magnetic pattern 160 and the second magnetic pattern 180 may stably have an in-plane magnetization direction.

[0047] In the absence of a current supplied from the outside or in the presence of a current supplied for a read operation, the in-plane magnetization direction 160m of the first magnetic pattern 160 and the in-plane magnetization direction 180m of the second magnetic pattern 180 may be perpendicular to the perpendicular magnetization direction 150m of the free magnetic pattern 150. For example, the angle therebetween may be 90° or may be close to 90°.

[0048] Each of the first magnetic pattern 160 and the second magnetic pattern 180 may apply a stray field to the free magnetic pattern 150. As a vector, the first stray field applied to the free magnetic pattern 150 by the first magnetic pattern 160 may be opposite to the second stray field applied to the free magnetic pattern 150 by the second magnetic pattern 180. In this way, the first stray field and the second stray field may destructively interfere with each other. Due to the destructive interference between the stray fields applied to the free magnetic pattern 150, the thermal stability of the free magnetic pattern 150 may be improved.

[0049] like Figure 1BAs shown, the first magnetic pattern 160 may have a first thickness 160T when measured in a direction perpendicular to the interface between the spacer SP and the in-plane magnetic structure HMS. The second magnetic pattern 180 may have a second thickness 180T when measured in a direction perpendicular to the interface between the spacer SP and the in-plane magnetic structure HMS.

[0050] In the case where the first thickness 160T and the second thickness 180T are less than a specific thickness, the first magnetic pattern 160 and the second magnetic pattern 180 may have an in-plane magnetization direction. The first thickness 160T of the first magnetic pattern 160 and the second thickness 180T of the second magnetic pattern 180 may be less than the thickness 150T of the free magnetic pattern 150, wherein the thickness 150T of the free magnetic pattern is measured in a direction perpendicular to the interface between the spacer SP and the in-plane magnetic structure HMS. In some embodiments, the maximum value of the first thickness 160T of the first magnetic pattern 160 and the maximum value of the second thickness 180T of the second magnetic pattern 180 may be less than the maximum value of the thickness 150T of the free magnetic pattern 150.

[0051] As an example, the first thickness 160T of the first magnetic pattern 160 and the second thickness 180T of the second magnetic pattern 180 may be in the range of 0.5 nm to 10 nm.

[0052] In some embodiments, the second thickness 180T of the second magnetic pattern 180 may be greater than the first thickness 160T of the first magnetic pattern 160, in which case the stray field may be effectively suppressed. As an example, the maximum value of the second thickness 180T of the second magnetic pattern 180 may be greater than the maximum value of the first thickness 160T of the first magnetic pattern 160. When the first magnetic pattern 160 and the second magnetic pattern 180 have the same thickness, because the second magnetic pattern 180 is farther away from the free magnetic pattern 150 than the first magnetic pattern 160, the free magnetic pattern 150 may be more affected by the first stray field than by the second stray field.

[0053] In the case where the second thickness 180T of the second magnetic pattern 180 is greater than the first thickness 160T of the first magnetic pattern 160 as described above, the balance of the first stray field and the second stray field applied to the free magnetic pattern can be maintained. In some embodiments, the second thickness 180T of the second magnetic pattern 180 can be substantially equal to the first thickness 160T of the first magnetic pattern 160.

[0054] Figure 2A and Figure 2B is a cross-sectional view showing a change in the magnetization direction of a magnetic memory device during a write operation. For example, Figure 2A and Figure 2B is corresponding to Figure 1AA cross-sectional view of portion 'aa'.

[0055] Reference Figure 2A , the free magnetic pattern 150 may be provided to have a first perpendicular magnetization direction 150a (e.g., as shown in ellipse AP) that is antiparallel to the perpendicular magnetization direction 140m of the second pinned pattern 140. A write current may be applied to switch the first perpendicular magnetization direction 150a of the free magnetic pattern 150. In some embodiments, the write current may be a DC current flowing from the top electrode TE to the bottom electrode BE. This means that electrons flow in a direction from the bottom electrode BE to the top electrode TE.

[0056] In this case, the free magnetic pattern 150 may be oriented to receive the spin transfer torque from the electrons polarized by the second pinned pattern 140 .

[0057] Similarly, the first magnetic pattern 160 may be oriented to receive spin transfer torque from electrons polarized by the free magnetic pattern 150 .

[0058] Due to the spin transfer torque, the first magnetic pattern 160 may have a non-zero perpendicular magnetization component 160p. The second magnetic pattern 180 antiferromagnetically coupled with the first magnetic pattern 160 may also have a non-zero perpendicular magnetization component 180p. As a vector, the perpendicular magnetization component 160p of the first magnetic pattern 160 may be antiparallel to the perpendicular magnetization component 180p of the second magnetic pattern 180.

[0059] In the case where the first magnetic pattern 160 has a perpendicular magnetization component 160 p that is not zero, the first magnetic pattern 160 may apply an additional spin transfer torque to the free magnetic pattern 150 in the perpendicular direction.

[0060] In this way, a threshold current required to switch the first perpendicular magnetization direction 150 a of the free magnetic pattern 150 may be reduced.

[0061] In some embodiments, the first magnetic pattern 160 may have a thickness less than a specific thickness, in which case the first magnetic pattern 160 may effectively receive the spin transfer torque. As an example, the thickness 160T of the first magnetic pattern 160 may be less than the thickness 150T of the free magnetic pattern 150. As an example, the maximum value of the first thickness 160T of the first magnetic pattern 160 may be less than the maximum value of the thickness 150T of the free magnetic pattern 150. Figure 2B , the first perpendicular magnetization direction 150a of the free magnetic pattern 150 may be changed to a second perpendicular magnetization direction 150b (eg, as shown in an ellipse P) that is parallel to the perpendicular magnetization direction 140m of the second pinned pattern 140.

[0062] As described above, since the stray field from the first magnetic pattern 160 may be offset or reduced by the stray field from the second magnetic pattern 180, the free magnetic pattern 150 may have high thermal stability, and thus the second perpendicular magnetization direction 150b of the free magnetic pattern 150 may not change to the first perpendicular magnetization direction 150a.

[0063] According to some embodiments of the inventive concept, a magnetic memory device may include: a magnetic tunnel junction pattern including a pinned pattern having at least one perpendicular magnetization direction; and a first magnetic pattern 160 and a second magnetic pattern 180 having an in-plane magnetization direction and antiferromagnetically coupled to each other. Therefore, the thermal stability of the magnetic memory device may be improved and the threshold of the switching current may be reduced.

[0064] Figure 3 is a cross-sectional view showing a magnetic memory device according to some embodiments of the inventive concept. Figure 1A and Figure 1B Described elements may be identified by the same reference numerals without repeating their overlapping descriptions.

[0065] Reference Figure 3 , the in-plane magnetic structure HMS may be on the lower interlayer insulating layer 102, and may be electrically connected to the lower contact plug 104 through the bottom electrode BE. The seed pattern 110 may be interposed between the in-plane magnetic structure HMS and the bottom electrode BE.

[0066] The in-plane magnetic structure HMS may include the second magnetic pattern 180 , the first magnetic pattern 160 on the second magnetic pattern 180 , and the non-magnetic pattern 170 therebetween.

[0067] The magnetic tunnel junction pattern MTJ may be on the in-plane magnetic structure HMS. A spacer SP may be provided between the in-plane magnetic structure HMS and the magnetic tunnel junction pattern MTJ.

[0068] The magnetic tunnel junction pattern MTJ may include a free magnetic pattern 150, a vertical magnetic structure VMS on the free magnetic pattern 150, and a tunnel barrier pattern TBP therebetween. The vertical magnetic structure VMS may include a second pinned pattern 140, a first pinned pattern 120 on the second pinned pattern 140, and an exchange coupling pattern 130 therebetween.

[0069] The top electrode TE may be on the magnetic tunnel junction pattern MTJ. The magnetic tunnel junction pattern MTJ may be between the top electrode TE and the in-plane magnetic structure HMS. The magnetic tunnel junction pattern MTJ and the in-plane magnetic structure HMS may be interposed between the bottom electrode BE and the top electrode TE, wherein the in-plane magnetic structure is closer to the bottom electrode BE and the magnetic tunnel junction pattern MTJ is closer to the top electrode TE.

[0070] Figure 4 is a cross-sectional view showing a magnetic memory device 3000 according to some embodiments of the inventive concept. Figure 1A and Figure 1B Described elements may be identified by the same reference numerals without repeating their overlapping descriptions.

[0071] refer to Figure 4 , the in-plane magnetic structure HMS may include a first magnetic pattern 160 , a first non-magnetic pattern 170 , a second magnetic pattern 180 , a second non-magnetic pattern 190 , and a third magnetic pattern 195 , which may be sequentially stacked.

[0072] The first surface of the second nonmagnetic pattern 190 may contact the first surface of the second magnetic pattern 180, and the second surface of the second nonmagnetic pattern 190 may contact the first surface of the third magnetic pattern 195. The second magnetic pattern 180 and the third magnetic pattern 195 may be antiferromagnetically coupled to each other through the second nonmagnetic pattern 190.

[0073] The third magnetic pattern 195 may have a magnetization direction 195m that is parallel to the magnetization direction 160m of the first magnetic pattern 160 and antiparallel to the magnetization direction 180m of the second magnetic pattern 180. In some embodiments, the exchange coupling constant between the second magnetic pattern 180 and the third magnetic pattern 195 may be -0.1 erg / cm 2 To -2erg / cm 2 within the range.

[0074] The third magnetic pattern 195 may be formed of or include a soft magnetic material. As an example, the third magnetic pattern 195 may include at least one of iron (Fe), cobalt (Co), and nickel (Ni). In some embodiments, the first magnetic pattern 160, the second magnetic pattern 180, and the third magnetic pattern 195 may include nickel (Ni), cobalt (Co), and boron (B). The composition ratio of cobalt iron boron (CoFeB) in the first magnetic pattern 160, the second magnetic pattern 180, and the third magnetic pattern 195 may be different from the composition ratio of cobalt iron boron (CoFeB) in the free magnetic pattern 150. For example, the composition ratio of boron in each of the first magnetic pattern 160, the second magnetic pattern 180, and the third magnetic pattern 195 may be higher than the composition ratio of boron in the free magnetic pattern 150. The first magnetic pattern 160, the second magnetic pattern 180, and the third magnetic pattern 195 having a high boron composition ratio may have a crystallinity less than that of the free magnetic pattern 150.

[0075] The magnetocrystalline anisotropy energy of the third magnetic pattern 195 may be greater than 0 and may be less than or equal to 1×10 7 erg / cm3 .

[0076] The third magnetic pattern 195 may have a third thickness 195T measured in a direction perpendicular to the interface between the spacer SP and the in-plane magnetic structure HMS. The third thickness 195T of the third magnetic pattern 195 may be less than the second thickness 180T of the second magnetic pattern 180. As an example, a maximum value of the third thickness 195T of the third magnetic pattern 195 may be less than a maximum value of the second thickness 180T of the second magnetic pattern 180.

[0077] Figure 5 is a cross-sectional view showing a magnetic memory device 4000 according to some embodiments of the inventive concept. Figure 1A and Figure 1B Described elements may be identified by the same reference numerals without repeating their overlapping descriptions.

[0078] refer to Figure 5 , the interconnection structure 215 may be disposed on the substrate 100 a.

[0079] The substrate 100a may be a semiconductor substrate, such as silicon (Si), silicon on insulator (SOI), silicon germanium (SiGe), germanium (Ge), and gallium arsenide (GaAs) wafers. The interconnect structure 215 may include interconnect lines 210, which are spaced apart from each other in a first direction D1 perpendicular to the top surface of the substrate 100a. The interconnect lines 210 may extend in a second direction D2 parallel to the top surface of the substrate 100a. The lowest interconnect line among the interconnect lines 210 may be spaced apart from the substrate 100a in the first direction D1. The interconnect structure 215 may also include contacts 212, which are located between the lowest interconnect line among the interconnect lines 210 and the substrate 100 and between the interconnect lines 210. Some of the contacts 212 may connect the lowest interconnect line among the interconnect lines 210 to the substrate 100a, while other contacts among the contacts 212 may connect the interconnect lines 210 to each other. The interconnection line 210 and the contact 212 may be formed of or include at least one of metal materials (eg, copper).

[0080] The selection element SE may be arranged in the substrate 110a. The selection element SE may be, for example, a field effect transistor. The lowermost interconnection line among the interconnection lines 210 may be electrically connected to a terminal of the selection element SE through a contact 212 connected thereto.

[0081] The first interlayer insulating layer 220 may be on the substrate 100a to cover the interconnect structure 215. The uppermost interconnect line among the interconnect lines 210 may have a top surface located at the same height as the top surface of the first interlayer insulating layer 220. In this specification, the term "height" may mean a distance from the top surface 100U of the substrate 100a in the first direction D1. The first interlayer insulating layer 220 may be formed of or include at least one of oxide, nitride and / or oxynitride.

[0082] The second interlayer insulating layer 222 may be on the first interlayer insulating layer 220 and may cover the top surface of the uppermost interconnection line among the interconnection lines 210. The lower contact plugs 104 may be in the second interlayer insulating layer 222 and on the interconnection structure 215. The lower contact plugs 104 may be two-dimensionally arranged in the second direction D2 and the third direction D3 on the interconnection structure 215. The lower contact plugs 104 may extend in the first direction D1 and may have side surfaces inclined at an angle with respect to the top surface 100U of the substrate 100a.

[0083] The second direction D2 and the third direction D3 may be parallel to the top surface 100U of the substrate 100a, and may not be parallel to each other. Each lower contact plug 104 may be provided to penetrate the second interlayer insulating layer 222, and may be connected to the uppermost interconnection line of the interconnection lines 210. As an example, each lower contact plug 104 may contact the top surface of a corresponding one of the uppermost interconnection lines 210. Each lower contact plug 104 may be electrically connected to a terminal of a corresponding one of the selection elements SE through the interconnection structure 215.

[0084] The data storage structures DS may be on the lower contact plugs 104. The data storage structures DS may be two-dimensionally arranged in the second direction D2 and the third direction D3, and may be respectively on the lower contact plugs 104. Between the data storage structures DS, the second interlayer insulating layer 222 may have a recessed top surface 222RU.

[0085] The third interlayer insulating layer 226 may be on the second interlayer insulating layer 222 to cover the data storage structure DS. The third interlayer insulating layer 226 may cover the recessed top surface 222RU of the second interlayer insulating layer 222, and may cover the side surface of the data storage structure DS. The protective insulating layer 224 may be interposed between the side surface of each data storage structure DS and the third interlayer insulating layer 226. The protective insulating layer 224 may surround the side surface of each data storage structure DS. The protective insulating layer 224 may extend from the side surface of each data storage structure DS to the region between the second interlayer insulating layer 222 and the third interlayer insulating layer 226. The protective insulating layer 224 may be interposed between the recessed top surface 222RU of the second interlayer insulating layer 222 and the third interlayer insulating layer 226. The protective insulating layer 224 may be formed of or include a nitride (eg, silicon nitride), and the third interlayer insulating layer 226 may be formed of or include at least one of an oxide, a nitride, or a nitride oxide.

[0086] The conductive wires 108 may be on the third interlayer insulating layer 226. The conductive wires 108 may extend in the second direction D2 and may be spaced apart from each other in the third direction D3. Each conductive wire 108 may be commonly connected to some of the data storage structures DS arranged in the second direction D2. The conductive wires 108 may include metal (e.g., copper). The conductive wires 108 may be used as bit lines.

[0087] Each data storage structure DS may include a bottom electrode BE, a magnetic tunnel junction pattern MTJ, a spacer SP, an in-plane magnetic structure HMS, and a top electrode TE sequentially stacked on the lower contact plug 104. Each data storage structure DS may also include a seed pattern between the bottom electrode BE and the magnetic tunnel junction pattern MTJ. Each data storage structure DS may have a trapezoidal cross-section and may have an inclined side surface.

[0088] Each element of the data storage structure DS can be referenced Figure 1A and Figure 1B Corresponding elements of the described magnetic memory device are substantially the same.

[0089] Fig. 6A and Figure 6B is a cross-sectional view showing a method of manufacturing a magnetic memory device according to some embodiments of the present inventive concept. Figure 1A and Figure 1B Described elements may be identified by the same reference numerals without repeating their overlapping descriptions.

[0090] Reference Fig. 6A, a lower interlayer insulating layer 102 may be formed on the substrate 100. The substrate 100 may include a semiconductor substrate. For example, the substrate 100 may be or include a silicon substrate, a germanium substrate, or a silicon germanium substrate. A selection element (not shown) may be formed on the substrate 100, and the lower interlayer insulating layer 102 may be formed to cover the selection element. The selection element may be a field effect transistor or a diode. Thereafter, a lower contact plug 104 may be formed in the lower interlayer insulating layer 102, and the formation of the lower contact plug 104 may include forming a lower contact hole in the lower interlayer insulating layer 102 and forming a lower contact layer to fill the lower contact hole.

[0091] The bottom electrode layer BEL may be formed on the lower interlayer insulating layer 102. The bottom electrode layer BEL may be formed of at least one of conductive metal nitrides (e.g., titanium nitride and tantalum nitride), or include at least one of conductive metal nitrides (e.g., titanium nitride and tantalum nitride). The seed layer 110L may be formed on the bottom electrode layer BEL. The seed layer 110L may be formed of a material (e.g., iridium (Ir) and ruthenium (Ru)) that allows the magnetic layer thereon to grow in a crystal structure, or include the material (e.g., iridium (Ir) and ruthenium (Ru)). The bottom electrode layer BEL and the seed layer 110L may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process.

[0092] The first pinned layer 120L may be formed on the seed layer 110L. The first pinned layer 120L may be a ferromagnetic layer including a ferromagnetic material. The first pinned layer 120L may include at least one of: i) a perpendicular magnetic material (e.g., CoFeTb, CoFeGd, and CoFeDy), ii) a perpendicular magnetic material of an L10 structure, iii) a CoPt-based material having a hexagonal close-packed lattice structure, iv) a multilayer structure in which ferromagnetic layers and non-magnetic layers are alternately stacked, and v) a cobalt-based full-Heusler alloy.

[0093] The perpendicular magnetic material of the L10 structure may include at least one of L10 FePt, L10 FePd, L10 CoPd, and L10 CoPt.

[0094] The multilayer structure may include at least one of (Co / Pt)n, (CoFe / Pt)n, (CoFe / Pd)n, (Co / Pd)n, (Co / Ni)n, (CoNi / Pt)n, (CoCr / Pt)n, and (CoCr / Pd)n, where "n" is a natural number equal to or greater than 2. The cobalt-based full-Heusler alloy may include Co 2 FeSi、Co 2 MnSi、Co 2 FeMnSi、Co 2FeAl and Co 2 At least one of CrAl.

[0095] The first pinned layer 120L may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process.

[0096] The exchange coupling layer 130L may be formed on the first pinned layer 120L. The exchange coupling layer 130L may be formed of or include a non-magnetic material exhibiting antiferromagnetic coupling characteristics and may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process.

[0097] The second pinned layer 140L may be formed on the exchange coupling layer 130L. The second pinned layer 140L may be formed of or include, for example, the same ferromagnetic material as the first pinned layer 120L. The second pinned layer 140L may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process. The first pinned layer 120L, the exchange coupling layer 130L, and the second pinned layer 140L may constitute a vertical magnetic layer VML.

[0098] The tunnel barrier layer TBL may be formed on the vertical magnetic layer VML. The tunnel barrier layer TBL may be formed of or include at least one of magnesium oxide, titanium oxide, aluminum oxide, magnesium zinc oxide, and magnesium boron oxide, and may be formed by, for example, a sputtering deposition process.

[0099] The free magnetic layer 150L may be formed on the tunnel barrier layer TBL. When the free magnetic layer 150L is deposited, the free magnetic layer 150L may have an amorphous structure and may be formed of, for example, cobalt iron boron (CoFeB) or include, for example, cobalt iron boron (CoFeB). The free magnetic layer 150L may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process. The free magnetic layer 150L may be crystallized by a subsequent heat treatment process in which the tunnel barrier layer TBL serves as a seed layer.

[0100] The vertical magnetic layer VML, the tunnel barrier layer TBL, and the free magnetic layer 150L may constitute a magnetic tunnel junction layer MTJL.

[0101] The spacer layer SPL may be formed on the magnetic tunnel junction layer MTJL. The spacer layer SPL may be formed of at least one of a metallic material and a metal oxide material, or include at least one of a metallic material and a metal oxide material. In some embodiments, the metallic material may include tantalum (Ta), and the metal oxide material may include magnesium oxide and tantalum oxide. The spacer layer SPL may be formed by, for example, a sputtering deposition process.

[0102] The first magnetic layer 160L may be formed on the spacer layer SPL. The first magnetic layer 160L may be formed to have a thickness 160LT that is smaller than the thickness 150LT of the free magnetic layer 150L. The first magnetic layer 160L may be formed of or include a soft magnetic material. As an example, the first magnetic layer 160L may be formed of or include at least one of iron (Fe), cobalt (Co), and nickel (Ni). In some embodiments, the first magnetic layer 160L may include cobalt iron boron (CoFeB), and the composition ratio of cobalt iron boron (CoFeB) in the first magnetic layer 160L may be different from the composition ratio of cobalt iron boron (CoFeB) in the free magnetic layer 150L. The first magnetic layer 160L may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process.

[0103] The nonmagnetic layer 170L may be formed on the first magnetic layer 160L. The nonmagnetic layer 170L may be formed of or include a nonmagnetic material exhibiting antiferromagnetic coupling characteristics and may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process.

[0104] The second magnetic layer 180L may be formed on the non-magnetic layer 170L. The second magnetic layer 180L may be formed to have a thickness 180LT greater than the thickness 160LT of the first magnetic layer 160L. For example, the second magnetic layer 180L may be formed of or include the same soft magnetic material as the first magnetic layer 160L. The second magnetic layer 180L may be formed by a sputtering deposition process, a chemical vapor deposition process, or an atomic layer deposition process.

[0105] The first magnetic layer 160L, the nonmagnetic layer 170L, and the second magnetic layer 180L may constitute an in-plane magnetic layer HML.

[0106] A conductive mask pattern 109 may be formed on the in-plane magnetic layer HML. The conductive mask pattern 109 may be formed of or include at least one of tungsten, titanium, aluminum, and metal nitrides (e.g., titanium nitride and tantalum nitride). The conductive mask pattern 109 may define an area in which a magnetic tunnel junction pattern is to be formed.

[0107] Reference Figure 6B , an etching process may be performed using the conductive mask pattern 109 as an etching mask. The etching process may be, for example, an ion beam etching process. The in-plane magnetic layer HML, the spacer layer SPL, the magnetic tunnel junction layer MTJL, the seed layer 110L, and the bottom electrode layer BEL may be sequentially etched by the etching process to form an in-plane magnetic structure HMS, a spacer SP, a magnetic tunnel junction pattern MTJ, a seed pattern 110, and a bottom electrode BE, respectively.

[0108] The in-plane magnetic structure HMS may include a first magnetic pattern 160 , a non-magnetic pattern 170 , and a second magnetic pattern 180 sequentially stacked on the spacer SP.

[0109] The magnetic tunnel junction pattern MTJ may include a vertical magnetic structure VMS, a tunnel barrier pattern TBP, and a free magnetic pattern 150 sequentially stacked on the seed pattern 110. The vertical magnetic structure VMS may include a first pinned pattern 120, a second pinned pattern 140 between the first pinned pattern 120 and the tunnel barrier pattern TBP, and an exchange coupling pattern 130 between the first pinned pattern 120 and the second pinned pattern 140.

[0110] After the etching process, a portion of the conductive mask pattern 109 may remain on the in-plane magnetic structure HMS, in which case such non-removed portion of the conductive mask pattern 109 may serve as a top electrode TE.

[0111] Return to reference Figure 1A , an upper interlayer insulating layer 106 may be formed on the lower interlayer insulating layer 102 to cover the bottom electrode BE, the seed pattern 110, the magnetic tunnel junction pattern MTJ, the spacer SP, the in-plane magnetic structure HMS, and the top electrode TE. A wire 108 may be formed on the upper interlayer insulating layer 106, and the wire 108 may be electrically coupled to the in-plane magnetic structure HMS through the top electrode TE.

[0112] According to some embodiments of the inventive concept, a magnetic memory device may include a perpendicular magnetic structure, a free magnetic pattern having a perpendicular magnetization direction, and a first magnetic pattern and a second magnetic pattern having an in-plane magnetization direction and antiferromagnetically coupled to each other. The antiferromagnetic coupling between the first magnetic pattern and the second magnetic pattern can reduce the stray field affecting the free magnetic pattern, and thus, the thermal stability of the magnetic memory device can be improved. In addition, when the magnetization direction of the free magnetic pattern is switched, the first magnetic pattern can apply additional spin transfer torque to the free magnetic pattern, and thus, the switching current required to switch the magnetization direction of the free magnetic pattern can be reduced.

[0113] While example embodiments of the inventive concepts of the present disclosure have been particularly shown and described, it will be understood by those skilled in the art that changes in form and details may be made without departing from the scope of the appended claims.

[0114] This application claims the priority of Korean Patent Application No. 10-2019-0122494 filed on October 2, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.

Claims

1. A magnetic storage device, comprising: a perpendicular magnetic structure including at least one pinned pattern having a perpendicular magnetization direction pinned to a specific direction; an in-plane magnetic structure including a first magnetic pattern and a second magnetic pattern, each having a different respective in-plane magnetization direction; a free magnetic pattern having a switchable perpendicular magnetization direction between the perpendicular magnetic structure and the in-plane magnetic structure; as well as a tunnel barrier pattern between the vertical magnetic structure and the free magnetic pattern, Wherein, the magnetocrystalline anisotropy energy of each of the first magnetic pattern and the second magnetic pattern is greater than 0erg / cm 3 , and is less than 1×10 7 erg / cm 3 , wherein each of the first magnetic pattern, the second magnetic pattern, and the free magnetic pattern includes cobalt (Co), iron (Fe), and boron (B), and The boron composition ratio in the first magnetic pattern and the second magnetic pattern is higher than the boron composition ratio in the free magnetic pattern.

2. The device according to claim 1, wherein The first magnetic pattern is closer to the free magnetic pattern than the second magnetic pattern, and wherein a maximum thickness of the second magnetic pattern in a first direction is greater than a maximum thickness of the first magnetic pattern in the first direction.

3. The device according to claim 1, wherein The in-plane magnetization direction of the first magnetic pattern is antiparallel to the in-plane magnetization direction of the second magnetic pattern.

4. The device according to claim 1, wherein The exchange coupling constant (Jex) between the first magnetic pattern and the second magnetic pattern is -0.1 erg / cm 2 To -2erg / cm 2 within the range. 5 . The device of claim 1 , further comprising a spacer between the in-plane magnetic structure and the free magnetic pattern, wherein the spacer comprises a metal oxide or a metal.

6. The device according to claim 5, wherein The metal oxide comprises magnesium oxide or tantalum oxide, and wherein the metal comprises tantalum. 7 . The device of claim 1 , further comprising a nonmagnetic pattern between the first magnetic pattern and the second magnetic pattern, wherein the nonmagnetic pattern comprises at least one of iridium (Ir), chromium (Cr), and ruthenium (Ru).

8. The device according to claim 1, wherein The perpendicular magnetic structure includes a first pinned pattern, a second pinned pattern, and an exchange coupling pattern therebetween, and wherein the first pinned pattern and the second pinned pattern are antiferromagnetically coupled to each other.

9. The device according to claim 1, wherein A thickness of each of the first and second magnetic patterns is greater than or equal to 0.5 nm and less than 10 nm.

10. A magnetic storage device comprising: a perpendicular magnetic structure including at least one pinned pattern having a perpendicular magnetization direction pinned to a specific direction; an in-plane magnetic structure including a first magnetic pattern, a second magnetic pattern, and a first non-magnetic pattern therebetween; a free magnetic pattern having a magnetization direction switchable between parallel and antiparallel to the perpendicular magnetization direction of the at least one pinned pattern, wherein the free magnetic pattern is between the perpendicular magnetic structure and the in-plane magnetic structure; as well as a tunnel barrier pattern between the vertical magnetic structure and the free magnetic pattern, wherein a magnetization direction of each of the first magnetic pattern and the second magnetic pattern of the in-plane magnetic structure is perpendicular to the magnetization direction of the free magnetic pattern, wherein the first magnetic pattern and the second magnetic pattern of the in-plane magnetic structure are antiferromagnetically coupled to each other through the first non-magnetic pattern, Wherein, the magnetocrystalline anisotropy energy of each of the first magnetic pattern and the second magnetic pattern is greater than 0erg / cm 3 , and is less than 1×10 7 erg / cm 3 , wherein each of the first magnetic pattern, the second magnetic pattern, and the free magnetic pattern includes cobalt (Co), iron (Fe), and boron (B), and The boron composition ratio in the first magnetic pattern and the second magnetic pattern is higher than the boron composition ratio in the free magnetic pattern.

11. The device according to claim 10, wherein A thickness of each of the first magnetic pattern and the second magnetic pattern is smaller than a thickness of the free magnetic pattern.

12. The device according to claim 10, wherein The in-plane magnetic structure further includes a third magnetic pattern, wherein the third magnetic pattern is spaced apart from the first magnetic pattern with the second magnetic pattern interposed therebetween, and wherein the third magnetic pattern has an in-plane magnetization direction.

13. The device according to claim 12, wherein The third magnetic pattern is antiferromagnetically coupled to the second magnetic pattern, and wherein a thickness of the third magnetic pattern is smaller than a thickness of the second magnetic pattern.

14. A magnetic storage device comprising: an interconnect structure on a substrate, the interconnect structure comprising interconnect lines spaced apart from each other in a first direction perpendicular to a top surface of the substrate and comprising contacts between the interconnect lines; a lower contact plug on the interconnect structure and connected to an uppermost one of the interconnect lines; a magnetic tunnel junction pattern on the lower contact plug; a bottom electrode between the lower contact plug and the magnetic tunnel junction pattern; a top electrode on the magnetic tunnel junction pattern; an in-plane magnetic structure between the magnetic tunnel junction pattern and the top electrode; and a spacer between the magnetic tunnel junction pattern and the in-plane magnetic structure, wherein the magnetic tunnel junction pattern comprises a free magnetic pattern having a switchable perpendicular magnetization direction, Wherein, the in-plane magnetic structure comprises: a first magnetic pattern; a second magnetic pattern on the first magnetic pattern; and a non-magnetic pattern between the first magnetic pattern and the second magnetic pattern, wherein a thickness of each of the first magnetic pattern and the second magnetic pattern is greater than or equal to 0.5 nm and less than 10 nm, wherein the thickness of the first magnetic pattern is smaller than the thickness of the second magnetic pattern, Wherein, the magnetocrystalline anisotropy energy of each of the first magnetic pattern and the second magnetic pattern is greater than 0erg / cm 3 and less than 1×10 7 erg / cm 3 , wherein each of the first magnetic pattern, the second magnetic pattern, and the free magnetic pattern includes cobalt (Co), iron (Fe), and boron (B), and The boron composition ratio in the first magnetic pattern and the second magnetic pattern is higher than the boron composition ratio in the free magnetic pattern.

15. The device according to claim 14, wherein The spacer includes magnesium oxide, tantalum oxide, or tantalum, and wherein the non-magnetic pattern includes at least one of iridium (Ir), chromium (Cr), and ruthenium (Ru).

16. The device according to claim 14, wherein The exchange coupling constant (Jex) between the first magnetic pattern and the second magnetic pattern is -0.1 erg / cm 2 To -2erg / cm 2 within the range.

Images