Light emitting device and apparatus including the same

By introducing a series structure and a charge generation unit with a specific material combination into the light-emitting device, the problem of low charge transport efficiency in the prior art is solved, higher light output and charge recombination efficiency are achieved, and the overall performance of the light-emitting device is improved.

CN112614948BActive Publication Date: 2026-03-27SAMSUNG DISPLAY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-08-28
Publication Date
2026-03-27

AI Technical Summary

Technical Problem

Existing light-emitting devices suffer from low efficiency in charge transport and recombination, especially in series structures, making it difficult to effectively improve light output performance.

Method used

The device employs a series light-emitting device structure, which includes multiple light-emitting units and charge-generating units. It utilizes n-type and p-type charge-generating layers with different material combinations and optimizes the charge transport and recombination process through an intermediate layer to improve light output efficiency.

Benefits of technology

By optimizing the material combination of the charge generation unit and the light-emitting unit, the light output performance and charge recombination efficiency of the light-emitting device are significantly improved, thereby increasing the overall luminous efficiency.

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Abstract

A light emitting device and an apparatus including the same are provided. The light emitting device includes a first electrode, a second electrode facing the first electrode, n number of light emitting cells between the first electrode and the second electrode, and n-1 number of charge generation cells between adjacent light emitting cells. The light emitting cells each include an emission layer, and at least one of the charge generation cells includes an n-type charge generation layer, a p-type charge generation layer, and an intermediate layer between the n-type charge generation layer and the p-type charge generation layer. The p-type charge generation layer includes a first material including a hole transport organic compound, an inorganic insulating compound, or any combination thereof, and a second material including at least one inorganic semiconductor compound, the intermediate layer includes a third material, and the third material is selected from an organic compound, an inorganic semiconductor compound, and an inorganic insulating compound.
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Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0123351, filed on October 4, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] One or more aspects of embodiments of the present disclosure relate to a light emitting device and an apparatus including the same. BACKGROUND

[0003] A light emitting device can convert electrical energy into light energy. Examples of such light emitting devices include organic light emitting devices using organic materials for an emission layer and / or quantum dot light emitting devices using quantum dots for an emission layer, etc.

[0004] In a light emitting device, a first electrode is located on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode are sequentially formed on the first electrode. Holes provided from the first electrode can move toward the emission layer through the hole transport region, and electrons provided from the second electrode can move toward the emission layer through the electron transport region. Then, the holes and the electrons as carriers can recombine in the emission layer to generate excitons. These excitons transition from an excited state to a ground state, thereby generating light. SUMMARY

[0005] One or more aspects of embodiments of the present disclosure relate to a tandem light emitting device including an intermediate layer in a charge generation unit and an apparatus including the same.

[0006] Additional aspects will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following description and drawings or can be learned by practice of the disclosed presented embodiments.

[0007] According to an embodiment, a light emitting device includes a first electrode; a second electrode facing the first electrode; n number of light emitting units between the first electrode and the second electrode; and n-1 number of charge generation units between adjacent light emitting units, where n can be a natural number of 2 or more, the light emitting units can each independently include an emission layer, and at least one of the charge generation units can include an n-type charge generation layer, a p-type charge generation layer, and an intermediate layer between the n-type charge generation layer and the p-type charge generation layer, where the p-type charge generation layer can include a first material and a second material, the first material includes a hole transport organic compound, an inorganic insulating compound, or any combination thereof, the second material includes at least one selected from an inorganic semiconductor compound, and the intermediate layer can include a third material selected from an organic compound, an inorganic semiconductor compound, and an inorganic insulating compound.

[0008] In one embodiment, the volume of the first material can be equal to or greater than the volume of the second material.

[0009] In one embodiment, the first material can include a hole transporting organic compound, and the volume ratio of the first material to the second material can be in a range from about 99: 1 to about 80:20, or the first material can include an inorganic insulating compound, and the volume ratio of the first material to the second material can be in a range from about 99: 1 to about 50:50.

[0010] In one embodiment, the third material can be an organic compound.

[0011] In one embodiment, the third material can have a band gap of about 2.5 eV or more.

[0012] In one embodiment, the third material can have a lowest unoccupied molecular orbital (LUMO) energy level of about -4.5 eV to about -6.5 eV.

[0013] In one embodiment, the n-type charge generation layer can include a fourth material and a fifth material, wherein the fourth material can include an alkali metal, an alkaline earth metal, a lanthanide metal, a transition metal, a post-transition metal, or any combination thereof, and the fifth material can include at least one selected from an electron transporting organic compound.

[0014] In one embodiment, the fifth material can have a LUMO energy level less than the LUMO energy level of the third material.

[0015] In one embodiment, the difference between the LUMO energy level of the fifth material and the LUMO energy level of the third material can be about 1 eV or less.

[0016] In one embodiment, the first electrode can be an anode, the second electrode can be a cathode, and the light-emitting device can include an n-th light-emitting unit between the first electrode and the second electrode, an (n-1)-th light-emitting unit between the first electrode and the n-th light-emitting unit, and an (n-1)-th charge generation unit between the n-th light-emitting unit and the (n-1)-th light-emitting unit, wherein the n-th light-emitting unit can include an n-th emission layer and the (n-1)-th light-emitting unit can include an (n-1)-th emission layer, an (n-1)-th hole transport region between the first electrode and the (n-1)-th emission layer, an (n-1)-th electron transport region between the (n-1)-th emission layer and the (n-1)-th charge generation unit, an n-th hole transport region between the (n-1)-th charge generation unit and the n-th emission layer, and an n-th electron transport region between the n-th emission layer and the second electrode, the hole transport regions can each independently include a hole injection layer, a hole transport layer, an electron blocking layer, a first buffer layer, or any combination thereof, and the electron transport regions can each independently include a hole blocking layer, an electron transport layer, an electron injection layer, a second buffer layer, or any combination thereof.

[0017] In one embodiment, the hole injection layer can include a sixth material and a seventh material, wherein the sixth material and the seventh material can be different from each other, the sixth material can include a halide of a lanthanide metal, a halide of a transition metal, a halide of a post-transition metal, tellurium, a telluride of a lanthanide metal, a telluride of a transition metal, a telluride of a post-transition metal, a selenide of a lanthanide metal, a selenide of a transition metal, a selenide of a post-transition metal, or any combination thereof, and the seventh material can include a hole transport organic compound, a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0018] In one embodiment, the seventh material can include at least one selected from a hole transport organic compound, and a volume ratio of the sixth material to the seventh material can be in a range of about 1:99 to about 20:80, or the seventh material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof, and a volume ratio of the sixth material to the seventh material can be in a range of about 1:99 to about 50:50.

[0019] In one embodiment, the electron injection layer can include an eighth material, and the eighth material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0020] In one embodiment, the electron injection layer can consist of the eighth material.

[0021] In one embodiment, the electron injection layer can further include a ninth material, the eighth material and the ninth material can be different from each other, and the ninth material can include an alkali metal, an alkaline earth metal, a lanthanide metal, or any combination thereof.

[0022] In one embodiment, the eighth material can be represented by Formula X, and the ninth material can be represented by Formula Y:

[0023] Formula X

[0024] A n B m

[0025] Formula Y

[0026] C.

[0027] In Formula X and Formula Y,

[0028] A and C can each independently include an alkali metal, an alkaline earth metal, a lanthanide metal, or any combination thereof,

[0029] B can be a halogen,

[0030] n and m can each independently be an integer of 1 or more, such that the eighth material is neutral, and

[0031] A and C can be different from each other.

[0032] In one embodiment, the hole transport layer can be in direct contact with the emission layer, the hole transport layer can include a tenth material and an eleventh material, the tenth material and the eleventh material can be different from each other, the tenth material can include at least one selected from hole transport organic compounds, and the eleventh material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0033] In one embodiment, the electron transport layer can be in direct contact with the emission layer, the electron transport layer can include a twelfth material and a thirteenth material, the twelfth material and the thirteenth material can be different from each other, the twelfth material can include at least one selected from electron transport organic compounds, and the thirteenth material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0034] According to another embodiment, there is provided a device including a thin film transistor including a source electrode, a drain electrode, and an active layer; and a light emitting device, wherein a first electrode of the light emitting device and one of the source electrode and the drain electrode of the thin film transistor can be electrically connected to each other.

[0035] In one embodiment, the device can further include a color filter, and the color filter can be located on a path along which light output from the light emitting device travels. BRIEF DESCRIPTION OF DRAWINGS

[0036] The above and other aspects, features, and advantages of certain embodiments of the disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0037] Figure 1 is a schematic cross-sectional view of a light emitting device according to an embodiment;

[0038] Figure 2 is a detailed cross-sectional view of a charge generation unit of Figure 1 ; and

[0039] Figure 3 is a schematic cross-sectional view of an apparatus including a light emitting device according to an embodiment. DETAILED DESCRIPTION

[0040] Reference will now be made in detail embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. It is to be understood that the embodiments can be implemented in various forms, and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are described below by referring to the drawings to explain aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0041] When an expression such as "at least one of a, b, and c," "one of a, b, and c," and "selected from the group consisting of a, b, and c" is used herein, it is intended to mean that a, b, and c are included as individuals, rather than a list of alternatives. Also, the use of "can" when describing embodiments of the present disclosure indicates "one or more embodiments of the present disclosure."

[0042] Hereinafter, embodiments of the present disclosure will be described in greater detail by referring to the accompanying drawings. Like or corresponding components will be designated by like reference numerals, and thus their redundant descriptions will be omitted.

[0043] It will be understood that, although the terms "first," "second," etc. can be used herein to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.

[0044] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0045] It will also be understood that the terms "comprises" and / or "comprising", or "includes" and / or "including" when used herein, specify the presence of stated features, integers, components or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, components or combinations thereof.

[0046] It will be understood that when a layer, region or component is referred to as being "on" or "to" another layer, region or component, it can be directly or indirectly formed on the other layer, region or component. That is, for example, one intervening layer, region or component can be present in between the layer, region or component and the other layer, region or component.

[0047] The size of the elements in the drawings can be exaggerated for the purpose of explanation. In other words, since the size and thickness of the components in the drawings are arbitrarily shown for the purpose of explanation, the following embodiments of the present disclosure are not limited thereto.

[0048] It will be understood that when a layer, region or component is referred to as being "connected to" another layer, region or component, it can be directly connected to the other layer, region or component, or one or more intervening layers, regions or components can be connected thereto. For example, it will be understood that when a layer, region or component is referred to as being "electrically connected to" another layer, region or component, it can be directly electrically connected to the other layer, region or component, or one or more intervening layers, regions or components can be electrically connected thereto.

[0049] The term "intermediate layer" as used herein refers to all layers (whether a single layer or multiple layers) located between a first electrode and a second electrode of a light-emitting device. The materials included in the "intermediate layer" can be organic materials and / or inorganic materials.

[0050] The expression "(intermediate layer) includes at least one compound represented by Formula 1" as used herein can include a case where "(intermediate layer) includes one or more identical compounds represented by Formula 1" as well as a case where "(intermediate layer) includes two or more different compounds represented by Formula 1".

[0051] The term "group" as used herein refers to a group of the IUPAC periodic table of elements.

[0052] The term "alkali metal" as used herein refers to Group 1 elements. In some embodiments, the alkali metal can be lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and / or cesium (Cs).

[0053] The term "alkali earth metal" as used herein refers to Group 2 elements. In some embodiments, the alkali earth metal can be magnesium (Mg), calcium (Ca), strontium (Sr), and / or barium (Ba).

[0054] The term "lanthanide metal" as used herein refers to lanthanum and the lanthanide elements in the periodic table. In some embodiments, the lanthanide metal can be lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and / or lutetium (Lu).

[0055] The term "transition metal" as used herein refers to elements belonging to periods 4-7 and groups 3-12. In some embodiments, the transition metal can be titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), zinc (Zn), and / or cadmium (Cd).

[0056] The term "post-transition metal" as used herein refers to a metal element belonging to one of periods 4-7 and simultaneously (synchronously) belonging to one of groups 13-17. In some embodiments, the post-transition metal can be aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), lead (Pb), bismuth (Bi), and / or polonium (Po).

[0057] The term "halogen" as used herein refers to group 17 elements. In some embodiments, the halogen can be fluorine (F), chlorine (Cl), bromine (Br), and / or iodine (I).

[0058] The term "inorganic semiconductor compound" as used herein can refer to all compounds that are inorganic materials and have a band gap of less than 4 eV. In some embodiments, the inorganic semiconductor compound can include halides of lanthanide metals, halides of transition metals, halides of post-transition metals, tellurium, tellurides of lanthanide metals, tellurides of transition metals, tellurides of post-transition metals, selenides of lanthanide metals, selenides of transition metals, selenides of post-transition metals, or any combination thereof. For example, the inorganic semiconductor compound can include Eul2, Ybl2, SmI2, Tml2, Agl, Cul, Nii2, Col2, Bii3, Pbl2, Sni2, Te, EuTe, YbTe, SmTe, TmTe, EuSe, YbSe, SmSe, TmSe, ZnTe, CoTe, ZnSe, CoSe, Bi2Te3, Bi2Se3, or any combination thereof.

[0059] The term "inorganic insulating compound" as used herein can refer to all compounds that are inorganic materials and have a band gap of at least 4 eV. In some embodiments, the inorganic insulating compound can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof. For example, the inorganic insulating compound can include Nal, KI, Rbl, Csl, NaCl, KC1, RbCl, CsCl, NaF, KF, RbF, CsF, MgI2, CaI2, SrI2, Bai2, MgCl2, CaCl2, SrCl2, BaCl2, MgF2, CaF2, SrF2, BaF2, Eul3, Ybl3, SmI3, Tml3, EuCl3, YbCl3, SmCl3, TmCl3, EuF3, YbF3, SmF3, TmF3, or any combination thereof.

[0060] The term "halide of an alkali metal" as used herein refers to a compound in which an alkali metal and a halogen ion are bonded. In some embodiments, the halide of an alkali metal can include Nal, KI, Rbl, Csl, NaCl, KC1, RbCl, CsCl, NaF, KF, RbF, CsF, or any combination thereof.

[0061] The term "halide of an alkaline earth metal" as used herein refers to a compound in which an alkaline earth metal and a halogen ion are bonded. In some embodiments, the halide of an alkaline earth metal can include MgI2, CaI2, SrI2, Bai2, MgCl2, CaCl2, SrCl2, BaCl2, MgF2, CaF2, SrF2, BaF2, or any combination thereof.

[0062] The term "halide of a lanthanide metal" as used herein refers to a compound in which a lanthanide metal and a halogen ion are bonded and / or covalently bonded. In some embodiments, the halide of a lanthanide metal can include Eul2, Ybl2, SmI2, Tml2, Eul3, Ybl3, SmI3, Tml3, EuCl3, YbCl3, SmCl3, TmCl3, EuF3, YbF3, SmF3, TmF3, or any combination thereof.

[0063] The term "halide of a transition metal" as used herein refers to a compound in which a transition metal and a halogen ion are bonded and / or covalently bonded. In some embodiments, the halide of a transition metal can include AgI, Cul, Nii2, CoI2, or any combination thereof.

[0064] The term "halide of a post-transition metal" as used herein refers to a compound in which a post-transition metal and a halogen ion are bonded and / or covalently bonded. In some embodiments, the halide of a post-transition metal can include B1I3, PbI2, SnI2, or any combination thereof.

[0065] The term "chalcogenide of a lanthanide metal" as used herein refers to a compound in which a lanthanide metal and a chalcogen ion are bonded, covalently bonded, and / or metallically bonded. In some embodiments, the chalcogenide of a lanthanide metal can include EuTe, YbTe, SmTe, TmTe, or any combination thereof.

[0066] The term "chalcogenide of a transition metal" as used herein refers to a compound in which a transition metal and a chalcogen ion are bonded, covalently bonded, and / or metallically bonded. In some embodiments, the chalcogenide of a transition metal can include ZnTe, CoTe, or any combination thereof.

[0067] The term "chalcogenide of a post-transition metal" as used herein refers to a compound in which a post-transition metal and a chalcogen ion are bonded, covalently bonded, and / or metallically bonded. In some embodiments, the chalcogenide of a post-transition metal can include Bi2Te3.

[0068] The term "selenide of a lanthanide metal" as used herein refers to a compound in which a lanthanide metal and a selenium (Se) ion are bonded, covalently bonded, and / or metallically bonded. In some embodiments, the selenide of a lanthanide metal can include EuSe, YbSe, SmSe, TmSe, or any combination thereof.

[0069] The term "selenide of a transition metal" as used herein refers to a compound in which a transition metal and a selenium ion are bonded, covalently bonded, and / or metallically bonded. In some embodiments, the selenide of a transition metal can include ZnSe, CoSe, or any combination thereof.

[0070] The term "selenide of a post-transition metal" as used herein refers to a compound in which a post-transition metal and a selenium ion are bonded, covalently bonded, and / or metallically bonded. In some embodiments, the selenide of a post-transition metal can include Bi2Se3.

[0071] Figure 1 Description of the Drawings

[0072] Figure 1 is a schematic cross-sectional view of a light emitting device according to an embodiment.

[0073] Reference Signs List Figure 1According to an embodiment, the light emitting device 1 can include a first electrode 110, a second electrode 190 facing the first electrode 110, a number n of light emitting units (ELUs) between the first electrode 110 and the second electrode 190, and a number n-1 of charge generation units (CGUs) between adjacent light emitting units, where n can be a natural number of 2 or more, the light emitting units can each independently include an emission layer, and at least one of the charge generation units can include an n-type charge generation layer, a p-type charge generation layer, and an intermediate layer between the n-type charge generation layer and the p-type charge generation layer.

[0074] Hereinafter, the structure of the light emitting device 1 according to an embodiment and a method of manufacturing the light emitting device 1 will be described with reference to the accompanying drawings. Figure 1

[0075] The first electrode 110

[0076] In Figure 1 , the substrate can be additionally positioned under the first electrode 110 or over the second electrode 190. The substrate can be a glass substrate and / or a plastic substrate each having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and / or water resistance.

[0077] The first electrode 110 can be formed by depositing or sputtering a material for forming the first electrode 110 on the substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 can be selected from materials having a high work function to facilitate hole injection.

[0078] The first electrode 110 can be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material for forming the first electrode 110 can be selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), and any combination thereof, but embodiments of the disclosure are not limited thereto. In one or more embodiments, when the first electrode 110 is a semi-transmissive electrode or a reflective electrode, the material for forming the first electrode 110 can be selected from magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and any combination thereof, but embodiments of the disclosure are not limited thereto.

[0079] The first electrode 110 can have a single-layer structure or a multi-layer structure including two or more layers. For example, the first electrode 110 can have a three-layer structure of ITO / Ag / ITO, but the structure of the first electrode 110 is not limited thereto.

[0080] The light emitting unit

[0081] ​The number of light emitting units is n.

[0082] Among the number of light emitting units, the light emitting unit closest to the first electrode 110 can be a first light emitting unit ELU1, the light emitting unit farthest from the first electrode 110 can be an n-th light emitting unit ELU(n), and the first light emitting unit ELU1 to the n-th light emitting unit ELU(n) are sequentially placed. That is, an n-1-th light emitting unit is located between the first electrode 110 and the n-th light emitting unit ELU(n).

[0083] The light emitting units can each independently include an electron transport region and / or a hole transport region.

[0084] The plurality of hole transport regions can each independently include a first buffer layer, a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof; and the plurality of electron transport regions can each independently include a second buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0085] In one embodiment, the first electrode 110 can be an anode, the second electrode 190 can be a cathode, and the n-th light emitting unit ELU(n) can be located between the first electrode 110 and the second electrode 190; the n-1-th light emitting unit can be located between the first electrode 110 and the n-th light emitting unit ELU(n); the n-1-th charge generation unit CGU(n-1) can be located between the n-th light emitting unit ELU(n) and the n-1-th light emitting unit, the n-th light emitting unit ELU(n) including an n-th emission layer, the n-1-th light emitting unit including an n-1-th emission layer; the n-1-th hole transport region can be located between the first electrode 110 and the n-1-th emission layer; the n-1-th electron transport region can be located between the n-1-th emission layer and the n-1-th charge generation unit CGU(n-1); the n-th hole transport region can be located between the n-1-th charge generation unit CGU(n-1) and the n-th emission layer; and the n-th electron transport region can be located between the n-th emission layer and the second electrode 190. The plurality of hole transport regions can each independently include a first buffer layer, a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof, and the plurality of electron transport regions can each independently include a hole blocking layer, an electron transport layer, an electron injection layer, a second buffer layer, or any combination thereof.

[0086] Hole injection layer in hole transport region

[0087] The light emitting device 1 can include a hole injection layer located between the first electrode 110 and the first emission layer and / or located between the n-1-th charge generation unit CGU(n-1) and the n-th emission layer.

[0088] The hole injection layer can include a sixth material and a seventh material, and the sixth material and the seventh material can be different from each other.

[0089] For example, the sixth material can include a halide of a lanthanide metal, a halide of a transition metal, a halide of a post-transition metal, tellurium, a telluride of a lanthanide metal, a telluride of a transition metal, a telluride of a post-transition metal, a selenide of a lanthanide metal, a selenide of a transition metal, a selenide of a post-transition metal, or any combination thereof.

[0090] In some embodiments, a volume of the seventh material can be equal to or greater than a volume of the sixth material in the hole injection layer.

[0091] For example, a volume of the sixth material can be about 50% or less in the hole injection layer.

[0092] For example, the seventh material can include a hole transporting organic compound, a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0093] The seventh material can include at least one selected from a hole transporting organic compound, and a volume ratio of the sixth material to the seventh material can be in a range of about 1:99 to about 20:80.

[0094] In some embodiments, the seventh material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof, and a volume ratio of the sixth material to the seventh material can be in a range of about 1:99 to about 50:50.

[0095] The term "hole transporting organic compound" as used herein refers to all suitable organic materials having hole transporting properties.

[0096] In some embodiments, the hole transporting organic compound can be selected from m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphor sulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), a compound represented by the following Formula 201, and a compound represented by the following Formula 202:

[0097]

[0098] Formula 201

[0099]

[0100] Formula 202

[0101]

[0102] In Formula 201 and Formula 202,

[0103] L 201 to L 204 may each independently be selected from substituted or unsubstituted C3-C 10 cycloalkylene, substituted or unsubstituted C1-C 10 heterocycloalkylene, substituted or unsubstituted C3-C 10 cycloalkenylene, substituted or unsubstituted C1-C 10 heterocycloalkenylene, substituted or unsubstituted C6-C 60 arylene, substituted or unsubstituted C1-C 60 heteroarylene, substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,

[0104] L 205 may be selected from *-O-*', *-S-*', *-N(Q 201 )-*', substituted or unsubstituted C1-C 20 alkylene, substituted or unsubstituted C2-C 20 alkenylene, substituted or unsubstituted C3-C 10 cycloalkylene, substituted or unsubstituted C1-C 10 heterocycloalkylene, substituted or unsubstituted C3-C 10 cycloalkenylene, substituted or unsubstituted C1-C 10 heterocycloalkenylene, substituted or unsubstituted C6-C 60 arylene, substituted or unsubstituted C1-C 60 heteroarylene, substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,

[0105] xa1to xa4may each independently be an integer of 0 to 3,

[0106] xa5may be an integer of 1 to 10, and

[0107] R 201 to R 204 and Q 201 may each independently be selected from substituted or unsubstituted C3-C 10 cycloalkyl, substituted or unsubstituted C1-C 10 heterocycloalkyl, substituted or unsubstituted C3-C10 cycloalkenyl, substituted or unsubstituted C1-C 10 heterocycloalkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C6-C 60 aryloxy, substituted or unsubstituted C6-C 60 arylthio, substituted or unsubstituted C1-C 60 heteroaryl, substituted or unsubstituted monovalent non-aromatic condensed polycyclic group and substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group.

[0108] For example, in Formula 202, R 201 and R 202 may be optionally connected to each other via a single bond, dimethyl-methylene and / or diphenyl-methylene; and R 203 and R 204 may be optionally connected to each other via a single bond, dimethyl-methylene and / or diphenyl-methylene.

[0109] In one embodiment, in Formula 201 and Formula 202,

[0110] L 201 to L 205 may be each independently selected from:

[0111] phenylene, indenylene, naphthylene, azulenylene, heptalene, indacene, acenylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenalenylene, phenanthrylene, anthrylene, fluoranthenylene, benzo[9,10]phenanthrylene, pyrenylene, pyrenylylene, tetracenylene, chrysenylene, pyranthrylene, pyronethrylene, thienylene, furanylene, carbazolylene, indolylene, isoindolylene, benzofuranylene, benzothienylene, dibenzofuranylene, dibenzothienylene, benzocarbazolylene, dibenzocarbazolylene, dibenzothiazolylene, and pyridinylene; and phenylene, indenylene, naphthylene, azulenylene, heptalene, indacene, acenylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenalenylene, phenanthrylene, anthrylene, fluoranthenylene, benzo[9,10]phenanthrylene, pyrenylene, pyrenylylene, tetracenylene, chrysenylene, pyranthrylene, pyronethrylene, thienylene, furanylene, carbazolylene, indolylene, isoindolylene, benzofuranylene, benzothienylene, dibenzofuranylene, dibenzothienylene, benzocarbazolylene, dibenzocarbazolylene, dibenzothiazolylene, and pyridinylene; and

[0112] each substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C 20 alkyl, C1-C 20 alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, phenyl, biphenyl, terphenyl, phenyl substituted with C1-C 10 alkyl, phenyl substituted with -F, indenylene, naphthylene, azulenylene, heptalene, indacene, acenylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenalenylene, phenanthrylene, anthrylene, fluoranthenylene, benzo[9,10]phenanthrylene, pyrenylene, pyrenylylene, tetracenylene, chrysenylene, pyranthrylene, pyronethrylene, thienylene, furanylene, carbazolylene, indolylene, isoindolylene, benzofuranylene, benzothienylene, dibenzofuranylene, dibenzothienylene, benzocarbazolylene, dibenzocarbazolylene, dibenzothiazolylene, and pyridinylene; and alkyl, tetraphenyl, francyl, perylene, pentylenetyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, leucophenyl, thiophene, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridyl, -Si(Q) 31 (Q) 32 (Q) 33 ) and -N(Q 31 (Q) 32 The following are selected from at least one of the following: phenylene, cyclopentadienylene, indenylene, naphthylene, chamomilecycloylene, heptadienylene, adaninylene, fluoreneylene, spirodifluoreneylene, benzo[9,10]fluoreneylene, dibenzo[9,10]fluoreneylene, phenanthroline, anthraceneylene, fluoranthroline, benzo[9,10]phenanthroline, pyreneylene, etc. The following compounds are listed: alkyl, tetraphenyl, terephthalyl, perylene, pentaphenyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, oleophyl, thiophene, furanyl, carbazolyl, indoleyl, isoyindoleyl, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazolyl, dibenzocarbazolyl, dibenzothiophene, and pyridyl.

[0113] Q 31 To Q 33 Each can be independently selected from C1-C 10 Alkyl, C1-C 10 Alkoxy, phenyl, biphenyl, terphenyl, and naphthyl.

[0114] In one or more embodiments, xa1 to xa4 can each be independently 0, 1 or 2.

[0115] In one or more embodiments, xa5 can be 1, 2, 3 or 4.

[0116] In one or more embodiments, R 201 To R 204 and Q 201 Each can be independently selected from:

[0117] Phenyl, biphenyl, terphenyl, cyclopentadienyl, indene, naphthyl, chamomilecycloyl, heptalenyl, indaneyl, acenaphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]phenanthryl, dibenzo[9,10]fluorenyl, phenanthyl, anthraceneyl, fluoranthyl, benzo[9,10]phenanthryl, pyrene, alkyl, tetraphenyl, francyl, perylene, pentylenetyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, leucophenyl, thienyl, furanyl, carbazoleyl, indoleyl, isoydinoleyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazoleyl, dibenzocarbazoleyl, dibenzothiophenyl, and pyridyl; and

[0118] All are substituted with groups ranging from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amido, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, phenyl, biphenyl, terphenyl, substituted with C1-C 10 Alkyl phenyl, substituted -F phenyl, cyclopentadienyl, indene, naphthyl, chamomilecycloyl, heptalenyl, indaneyl, acenaphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]phenanthryl, dibenzo[9,10]fluorenyl, pyrene alkyl, tetraphenyl, francyl, perylene, pentylenetyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, leucophenyl, thiophene, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridyl, -Si(Q) 31 (Q) 32 (Q) 33 ) and -N(Q 31 (Q) 32 The following are selected from at least one of the following: phenyl, biphenyl, terphenyl, cyclopentadienyl, indole, naphthyl, chamomilecycloyl, heptalenyl, indoleyl, acenaphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]phenanthryl, pyrene, The following compounds are listed: alkyl, tetraphenyl, furanyl, perylene, pentylenetyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, leucophenyl, thiophenyl, furanyl, carbazoleyl, indoleyl, isoindoleyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazoleyl, dibenzocarbazoleyl, dibenzothiophenolyl, and pyridyl.

[0119] Q 31 To Q 33 Same as described above.

[0120] In one or more embodiments, R from formula 201 201 To R 203 At least one of the selected items can be independently selected from:

[0121] fluorenyl, spirobifluorenyl, carbazolyl, diphénanthrol and diphénanthrol, and

[0122] each independently selected from deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 alkyl, C1-C 20 alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, phenyl, biphenyl, terphenyl, phenyl substituted with C1-C 10 alkyl, phenyl substituted with -F, naphthyl, fluorenyl, spirobifluorenyl, carbazolyl, diphénanthrol and diphénanthrol, and

[0123] Embodiments of the present disclosure are not limited thereto, however.

[0124] In one or more embodiments, in Formula 202, i) R 201 and R 202 may be connected to each other via a single bond, and / or ii) R 203 and R 204 may be connected to each other via a single bond.

[0125] In one or more embodiments, R 201 to R 204 may each independently be selected from:

[0126] carbazolyl; and

[0127] each independently selected from deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 alkyl, C1-C 20 alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, phenyl, biphenyl, terphenyl, phenyl substituted with C1-C 10 alkyl, phenyl substituted with -F, naphthyl, fluorenyl, spirobifluorenyl, carbazolyl, diphénanthrol and diphénanthrol, and

[0128] Embodiments of the present disclosure are not limited thereto, however.

[0129] The compound represented by Formula 201 can be represented by the following Formula 201A:

[0130] Formula 201A

[0131]

[0132] In one embodiment, the compound represented by formula 201 may be represented by the following formula 201A(1), but the embodiments of this disclosure are not limited thereto:

[0133] Formula 201A(1)

[0134]

[0135] In one or more embodiments, the compound represented by formula 201 may be represented by the following formula 201A-1, but the embodiments of this disclosure are not limited thereto:

[0136] Formula 201A-1

[0137]

[0138] In one embodiment, the compound represented by formula 202 can be represented by the following formula 202A:

[0139] Formula 202A

[0140]

[0141] In one or more embodiments, the compound represented by formula 202 can be represented by the following formula 202A-1:

[0142] Formula 202A-1

[0143]

[0144] In Equations 201A, 201A(1), 201A-1, 202A, and 202A-1,

[0145] L 201 To L 203 xa1 to xa3, xa5 and R 202 To R 204 All of these can be understood by referring to the corresponding descriptions provided above.

[0146] R 211 and R 212 All can be referenced and combined with R 203 To understand using the provided description,

[0147] R 213 To R 217 Each group can be independently selected from hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, cyclopentyl, cyclohexyl, cycloheptyl, cyclopentenyl, cyclohexenyl, phenyl, biphenyl, terphenyl, substituted with C1-C 10phenyl, phenyl substituted with -F, pentalenyl, indenyl, naphthyl, azulenyl, heptaienyl, indacene, acenaphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, phenyl, phenyl substituted with -F, pentalenyl, indenyl, naphthyl, azulenyl, heptaienyl, indacene, acenaphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl,

[0148] The hole transport region can include at least one compound selected from the group consisting of Compound HT1 to Compound HT39, but embodiments of the present disclosure are not limited thereto:

[0149]

[0150]

[0151]

[0152]

[0153] The thickness of the hole transport region can be in the range of about 0.1 nm to about 500 nm. When the thickness of the hole transport region is in the above range, suitable hole transport properties can be obtained without significantly increasing the driving voltage.

[0154] The hole transport layer in the hole transport region

[0155] The light emitting device 1 can include a hole transport layer in direct contact with the emission layer.

[0156] The hole transport layer can include a tenth material and an eleventh material, wherein the tenth material and the eleventh material can be different from each other. The tenth material can include at least one selected from hole transport organic compounds, and the eleventh material can include a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0157] In the hole transport layer, the volume of the tenth material can be equal to or greater than the volume of the eleventh material. In some embodiments, the volume ratio of the tenth material to the eleventh material in the hole transport layer can be in the range of about 99:1 to about 50:50.

[0158] The thickness of the hole transport layer can be in the range of about 0.1 nm to about 500 nm. When the thickness of the hole transport layer is in the above range, suitable hole transport properties can be obtained without significantly increasing the driving voltage.

[0159] Charge generation material in hole transport region

[0160] In addition to the above-described material, the hole transport region can further include a charge generation material for improving the electrical conductivity. The charge generation material can be uniformly or non-uniformly dispersed in the hole transport region.

[0161] The charge generation material can be, for example, a p-dopant.

[0162] In one embodiment, the p-dopant can have a lowest unoccupied molecular orbital (LUMO) energy level of -3.5 eV or less.

[0163] The p-dopant can include at least one selected from a quinone derivative, a metal oxide, and a cyano-containing compound, but embodiments of the present disclosure are not limited thereto.

[0164] For example, the p-dopant can include at least one selected from the following compounds: a quinone derivative such as tetracyanoquinodimethane (TCNQ) and / or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ);

[0165] a metal oxide such as tungsten oxide and / or molybdenum oxide;

[0166] 1,4,5,8,9,12-hexaazatriphenylenehexacarbonitrile (HAT-CN); and

[0167] a compound represented by the following formula 221,

[0168] but embodiments of the present disclosure are not limited thereto:

[0169]

[0170] Formula 221

[0171]

[0172] In formula 221,

[0173] R 221 to R 223 may be independently selected from substituted or unsubstituted C3-C 10 cycloalkyl, substituted or unsubstituted C1-C 10 heterocycloalkyl, substituted or unsubstituted C3-C 10 cycloalkenyl, substituted or unsubstituted C1-C 10 heterocycloalkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C1-C 60 heteroaryl, substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, wherein, from R221 To R 223 At least one of the selected groups may have a C1-C group substituted with cyano, -F, -Cl, -Br, -I, or -F. 20 Alkyl groups, C1-C substituted with -Cl 20 Alkyl groups, C1-C substituted with -Br 20 Alkyl groups and substituted C1-C groups with -I 20 At least one substituent selected from alkyl groups.

[0174] emission layer

[0175] Each light-emitting unit may independently include an emitting layer. For example, a light-emitting unit may include one emitting layer.

[0176] Multiple emitting layers can each independently emit light of different colors or can each independently emit light of the same color. For example, each of the multiple emitting layers can emit blue light, but the embodiments are not limited to this.

[0177] The emitting layer may include at least one selected from organic compounds and semiconductor compounds, but the embodiments are not limited thereto. When the emitting layer includes an organic compound, the light-emitting device 1 may be referred to as an organic light-emitting device.

[0178] In some embodiments, the organic compound may include a host and a dopant.

[0179] In some embodiments, the semiconductor compound may be a quantum dot, that is, the light-emitting device 1 may be a quantum dot light-emitting device.

[0180] In some embodiments, the semiconductor compound may be an organic perovskite and / or an inorganic perovskite.

[0181] The thickness of the emitting layer can range from about 0.1 nm to about 100 nm. In some embodiments, the thickness of the emitting layer can range from about 15 nm to about 50 nm. When the emitting layer emits blue light, the thickness of the blue emitting layer can range from about 15 nm to about 20 nm; when the emitting layer emits green light, the thickness of the green emitting layer can range from about 20 nm to about 40 nm; and when the emitting layer emits red light, the thickness of the red emitting layer can range from about 40 nm to about 50 nm. When the thickness of the emitting layer is within the above ranges, the light-emitting device 1 can obtain excellent (or suitable) light-emitting characteristics without significantly increasing the driving voltage.

[0182] The emitting layer of an organic light-emitting device may include a host and a dopant. The dopant may include phosphorescent dopant, fluorescent dopant, delayed fluorescence dopant, or any combination thereof.

[0183] The amount of the dopant in the emission layer can range from about 0.01 parts by weight to about 15 parts by weight, based on 100 parts by weight of the host, but embodiments of the present disclosure are not limited thereto.

[0184] The host can include a compound represented by the following Formula 301:

[0185] Formula 301

[0186] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 .

[0187] In Formula 301,

[0188] Ar 301 may be a substituted or unsubstituted C5-C 60 carbocyclyl, or a substituted or unsubstituted C1-C 60 heterocyclyl,

[0189] xb11may be 1, 2, or 3,

[0190] L 301 may be selected from substituted or unsubstituted C3-C 10 cycloalkylene, substituted or unsubstituted C1-C 10 heterocycloalkylene, substituted or unsubstituted C3-C 10 cycloalkenylene, substituted or unsubstituted C1-C 10 heterocycloalkenylene, substituted or unsubstituted C6-C 60 arylene, substituted or unsubstituted C1-C 60 heteroarylene, a substituted or unsubstituted divalent non-aromatic condensed polycyclyl, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclyl,

[0191] xb1may be an integer of 0 to 5,

[0192] R 301 may be selected from deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazine group, a hydrazone group, a substituted or unsubstituted C1-C 60 alkyl, a substituted or unsubstituted C2-C 60 alkenyl, a substituted or unsubstituted C2-C 60 alkynyl, a substituted or unsubstituted C1-C 60 alkoxy, a substituted or unsubstituted C3-C 10 cycloalkyl, a substituted or unsubstituted C1-C 10 heterocycloalkyl, a substituted or unsubstituted C3-C 10substituted or unsubstituted C1-C 10 substituted or unsubstituted C1-C 60 substituted or unsubstituted C1-C 60 substituted or unsubstituted C1-C 60 substituted or unsubstituted C1-C 60 substituted or unsubstituted C1-C 301 substituted or unsubstituted C1-C 302 substituted or unsubstituted C1-C 303 substituted or unsubstituted C1-C 301 substituted or unsubstituted C1-C 302 substituted or unsubstituted C1-C 301 substituted or unsubstituted C1-C 302 substituted or unsubstituted C1-C 301 substituted or unsubstituted C1-C 301 substituted or unsubstituted C1-C 301 substituted or unsubstituted C1-C 302

[0193] xb21may be an integer of 1 to 5, and

[0194] Q 301 to Q 303 may each independently be selected from C1-C 10 alkyl, C1-C 10 alkoxy, phenyl, biphenyl, terphenyl, and naphthyl, but embodiments of the present disclosure are not limited thereto.

[0195] In one embodiment, Ar 301 in formula 301may be selected from:

[0196] naphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, naphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl,

[0197] each of which is substituted with from one to three groups selected from the group consisting of deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl, naphthyl, -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ​), -C(=O)(Q 31 ), -S(=O)2(Q 31 ), and -P(=O)(Q 31 )(Q 32 ) can be selected from at least one of naphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, pyrenyl, indenanthryl, dibenzofuranyl, and dibenzothiophenyl, and

[0198] Q 31 to Q 33 may each be independently selected from C1-C 10 alkyl, C1-C 10 alkoxy, phenyl, biphenyl, terphenyl, and naphthyl, but embodiments of the present disclosure are not limited thereto.

[0199] When xb11 in formula 301 is 2 or more, two or more Ar 301 may be connected to each other via a single bond.

[0200] In one or more embodiments, the compound represented by formula 301 can be represented by the following formula 301-1 or formula 301-2:

[0201] Formula 301-1

[0202]

[0203] Formula 301-2

[0204]

[0205] In formula 301-1 and formula 301-2,

[0206] A 301 to A 304 may each be independently selected from benzene, naphthalene, phenanthrene, fluoranthene, benzo[9,10]phenanthrene, pyrene, pyridine, pyrimidine, indene, fluorene, spirobifluorene, benzofluorene, dibenzofluorene, indole, carbazole, benzocarbazole, dibenzocarbazole, furan, benzofuran, dibenzofuran, naphthofuran, benzonaphthofuran, dinaphthofuran, thiophene, benzothiophene, dibenzothiophene, naphthothiophene, benzonaphthothiophene, and dinaphthothiophene,

[0207] X 301 may be O, S, or N-[(L 304 ) xb4 -R 304 ],

[0208] R 311To R 314 Each group can be independently selected from hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, phenyl, biphenyl, terphenyl, naphthyl, -Si(Q) 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) and -P(=O)(Q 31 (Q) 32 ),

[0209] xb22 and xb23 can each be independently 0, 1, or 2.

[0210] L 301 xb1, R 301 and Q 31 To Q 33 All of these can be understood by referring to the corresponding descriptions provided above.

[0211] L 302 To L 304 All can be referenced and combined with L 301 To understand using the provided description,

[0212] xb2 to xb4 can all be understood by referring to and combining the description provided in xb1, and

[0213] R 302 To R 304 All can be referenced and combined with R 301 Use the provided description to understand.

[0214] For example, L in Equations 301, 301-1, and 301-2 301 To L 304 Each can be independently selected from:

[0215] Phenylidene, naphthylene, fluorene, spirodifluorene, benzo[a]fluorene, dibenzo[a]fluorene, phenanthrene, anthracene, fluorenylanethyl, benzo[9,10]phenanthrene, pyrene, phenanthrene Perylene, pentafenyl, hexaphenylene, pentaphenylene, thiopheneyl, furanyl, carbazolyl, indoleyl, isoyindoleyl, benzofuranyl, benzothiopheneyl, dibenzofuranyl, dibenzothiopheneyl, benzocarbazolyl, dibenzocarbazolyl, dibenzothiopheneyl, pyridinyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiazolyl, oxadiazolyl Pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxalinyl, quinoxalinyl, phenanthrenediyl, acridineyl, phenanthrene-rheinyl, benzimidazolyl, isobenzothiazolyl, benzimidazolyl, isobenzoxazolyl, isobenzoxazolyl, triazoleyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and zazacarbazolyl; and

[0216] All are substituted with groups ranging from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amido, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, pyrene, Peryl, pentylenyl, hexaphenyl, pentaphenyl, thienyl, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridinyl, imidazole, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiadiazolyl, oxadiazolyl, pyridinyl Azinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxolinyl, quinazolinyl, cenolinyl, phenanthridineyl, acridineyl, phenanthroxolinyl, phenazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridyl, imidazopyrimidinyl, azacarbazolyl, -Si(Q) 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) and -P(=O)(Q 31 (Q) 32The following are selected from at least one of the following: phenylene, naphthylene, fluorene, spirodifluorene, benzo[9,10]fluorene, dibenzo[9,10]fluorene, phenanthrene, anthracene, fluoranthracene, benzo[9,10]phenanthrene, pyrene, etc. Perylene, pentafenyl, hexaphenylene, pentaphenylene, thiopheneyl, furanyl, carbazolyl, indoleyl, isoyindoleyl, benzofuranyl, benzothiopheneyl, dibenzofuranyl, dibenzothiopheneyl, benzocarbazolyl, dibenzocarbazolyl, dibenzothiopheneyl, pyridinyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiazolyl, oxadiazolyl The following groups are listed: pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxalinyl, quinoxalinyl, phenanthrenediphenyl, acridineyl, phenanthrene-pyridinyl, benzimidazolyl, isobenzothiazolyl, benzimidazolyl, isobenzoxazolyl, isobenzoxazolyl, triazoleyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and zazacarbazolyl.

[0217] Q 31 To Q 33 Same as described above.

[0218] In one embodiment, R in Equations 301, 301-1, and 301-2 301 To R 304 Each can be independently selected from:

[0219] Phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, phenanthryl, anthracene, fluoranyl, benzo[9,10]phenanthryl, pyrene Peryl, pentylenyl, hexaphenyl, pentaphenyl, thienyl, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiadiazolyl, oxadiazolyl Pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxolinyl, quinazolinyl, cenolinyl, phenanthridineyl, acridineyl, phenanthroxolinyl, phenazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and azacarbazolyl; and

[0220] All are substituted with groups ranging from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amido, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20alkyl, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzo fluorenyl, dibenzo fluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyryl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphthridinyl, quinoxalinyl, quinazolinyl, cinnolinyl, phenanthridinyl, acridinyl, phenanthrolinyl, phenoxazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, azacarbazolyl, -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O)2(Q 31 ), and -P(=O)(Q 31 )(Q 32 ) are selected from at least one of phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzo fluorenyl, dibenzo fluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyryl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphthridinyl, quinoxalinyl, quinazolinyl, cinnolinyl, phenanthridinyl, acridinyl, phenanthrolinyl, phenoxazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and azacarbazolyl, and

[0221] Q 31 to Q 33 are the same as described above.

[0222] In one or more embodiments, the host can include an alkaline earth metal complex. For example, the host can be selected from a Be complex (e.g., compound H55), a Mg complex, and a Zn complex.

[0223] The host can include at least one selected from 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tris(carbazol-9-yl)benzene (TCP), and compounds H1 to H55 below, but embodiments of the present disclosure are not limited thereto:

[0224]

[0225]

[0226]

[0227] In one or more embodiments, the host can include at least one selected from a silicon-containing compound (e.g., BCPDS, etc.) and a phosphine oxide-containing compound (e.g., POPCPA, etc.).

[0228] In one or more suitable modifications, the host can include only one compound or can include two or more different compounds (e.g., the host can include BCPDS and POPCPA).

[0229] The phosphorescent dopant can include an organometallic complex represented by the following formula 401:

[0230] Formula 401

[0231] M(L 401 ) xc1 (L 402 ) xc2 ,

[0232] Formula 402

[0233]

[0234] In formula 401 and formula 402,

[0235] M can be selected from iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), and thulium (Tm),

[0236] L 401may be a ligand represented by formula 402, and xc1may be 1, 2, or 3, wherein, when xc1is 2 or more, two or more L 401 may be the same as or different from each other,

[0237] L 402 may be an organic ligand, and xc2may be an integer of 0 to 4, wherein, when xc2may be two or more, two or more L 402 may be the same as or different from each other,

[0238] X 401 to X 404 may each independently be nitrogen or carbon,

[0239] X 401 and X 403 may be connected to each other via a single bond or a double bond, X 402 and X 404 may be connected to each other via a single bond or a double bond,

[0240] A 401 and A 402 may each independently be selected from C5-C 60 carbocyclyl or C1-C 60 heterocyclyl,

[0241] X 405 may be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q 411 )-*', *-C(Q 411 )(Q 412 )-*', *-C(Q 411 )=C(Q 412 )-*', *-C(Q 411 )=*', *=C(Q 411 )-*' or *=C=*', wherein Q 411 and Q 412 may each independently be hydrogen, deuterium, C1-C 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl or naphthyl,

[0242] X 406 may be a single bond, O or S,

[0243] R 401 and R 402 may each independently be selected from hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, substituted or unsubstituted C1-C 20 alkyl, substituted or unsubstituted C1-C 20alkyl, substituted or unsubstituted C3-C 10 cycloalkyl, substituted or unsubstituted C1-C 10 heterocycloalkyl, substituted or unsubstituted C3-C 10 cycloalkenyl, substituted or unsubstituted C1-C 10 heterocycloalkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C6-C 60 aryloxy, substituted or unsubstituted C6-C 60 aralkyl, substituted or unsubstituted C7-C 60 heteroaryl, substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, -Si(Q 401 )(Q 402 )(Q 403 ), -N(Q 401 )(Q 402 ), -B(Q 401 )(Q 402 ), -C(=O)(Q 401 ), -S(=O)2(Q 401 ), and -P(=O)(Q 401 )(Q 402 ), and

[0244] Q 401 to Q 403 may each independently be selected from the group consisting of C1-C 10 alkyl, C1-C 10 alkoxy, C6-C 20 aryl, and C1-C 20 heteroaryl,

[0245] xc11and xc12may each independently be an integer of 0 to 10, and

[0246] In Formula 402, * and *' each represent a binding site to M in Formula 401.

[0247] In one embodiment, A 401 and A 402 in Formula 402 can each independently be selected from the group consisting of benzene, naphthalene, fluorene, spirobifluorene, indene, pyrrole, thiophene, furan, imidazole, pyrazole, thiazole, isothiazole, oxazole, isoxazole, pyridine, pyrazine, pyrimidine, pyridazine, quinoline, isoquinoline, benzoquinoline, quinoxaline, quinazoline, carbazole, benzimidazole, benzofuran, benzothiophene, isobenzothiophene, benzoxazole, isobenzoxazole, triazole, tetrazole, oxadiazole, triazine, dibenzofuran, and dibenzothiophene.

[0248] In one or more embodiments, in Formula 402, i) X 401may be nitrogen, X 402 may be carbon, or ii) X 401 and X 402 may each independently be nitrogen.

[0249] In one or more embodiments, R 401 and R 402 may each independently be selected from:

[0250] hydrogen, deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 alkyl, and C1-C 20 alkoxy;

[0251] each independently substituted with at least one selected from deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 alkyl, and C1-C 20 alkoxy;

[0252] cyclopentyl, cyclohexyl, adamantyl, norbornyl, norbornenyl, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, quinazolinyl, carbazolyl, diphenylene furanyl, and diphenylene thienyl;

[0253] each independently substituted with at least one selected from deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 alkyl, C1-C 20 alkoxy, cyclopentyl, cyclohexyl, adamantyl, norbornyl, norbornenyl, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, quinazolinyl, carbazolyl, diphenylene furanyl, and diphenylene thienyl; and

[0254] -Si(Q 401 )(Q 402 )(Q 403 ), -N(Q 401 )(Q 402 ), -B(Q 401 )(Q 402 ), -C(=O)(Q401 ), -S(=O)2(Q 401 ), and -P(=O)(Q 401 )(Q 402 ), and

[0255] Q 401 to Q 403 may each independently be selected from the group consisting of C1-C 10 alkyl, C1-C 10 alkoxy, phenyl, biphenyl, and naphthyl, but embodiments of the present disclosure are not limited thereto.

[0256] In one or more embodiments, when xc1in Formula 401 is 2 or more, two or more L 401 may each independently be selected from the group consisting of C1-C 401 may each independently be selected from the group consisting of C1-C 407 may each independently be selected from the group consisting of C1-C 402 may each independently be selected from the group consisting of C1-C 408 may each independently be selected from the group consisting of C1-C 407 and X 408 may each independently be a single bond, a bond selected from the group consisting of *-O-*', *-S-*', *-C(=O)-*', *-N(Q 413 )-*', *-C(Q 413 )(Q 414 )-*, and *-C(Q 413 )=C(Q 414 )-*' (wherein Q 413 and Q 414 may each independently be hydrogen, deuterium, C1-C 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl, or naphthyl), but embodiments of the present disclosure are not limited thereto.

[0257] L 402 in Formula 401 can be a monovalent organic ligand, a divalent organic ligand, or a trivalent organic ligand. For example, L 402 may be selected from the group consisting of halogen, diketone (e.g., acetylacetone), carboxylic acid (e.g., picolinic acid), -C(=O), isonitrile, -CN, and phosphorus (e.g., phosphine and / or phosphite), but embodiments of the present disclosure are not limited thereto.

[0258] In one or more embodiments, the organometallic phosphorescent dopant can be selected from, for example, the following compounds PD1 to PD25, but embodiments of the present disclosure are not limited thereto:

[0259]

[0260] The fluorescent dopant can include an arylamine compound and / or a styrylamine compound.

[0261] The fluorescent dopant can include a compound represented by the following Formula 501:

[0262] Formula 501

[0263]

[0264] In Formula 501,

[0265] Ar 501 may be a substituted or unsubstituted C5-C 60 carbocyclyl, or a substituted or unsubstituted C1-C 60 heterocyclyl,

[0266] L 501 to L 503 may each independently be selected from substituted or unsubstituted C3-C 10 cycloalkylene, substituted or unsubstituted C1-C 10 heterocycloalkylene, substituted or unsubstituted C3-C 10 cycloalkenylene, substituted or unsubstituted C1-C 10 heterocycloalkenylene, substituted or unsubstituted C6-C 60 arylene, substituted or unsubstituted C1-C 60 heteroarylene, a substituted or unsubstituted bivalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted bivalent non-aromatic condensed heteropolycyclic group,

[0267] xd1 to xd3 can each independently be an integer of 0 to 3,

[0268] R 501 and R 502 may each independently be selected from substituted or unsubstituted C3-C 10 cycloalkyl, substituted or unsubstituted C1-C 10 heterocycloalkyl, substituted or unsubstituted C3-C 10 cycloalkenyl, substituted or unsubstituted C1-C 10 heterocycloalkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C6-C 60 aryloxy, substituted or unsubstituted C6-C 60 arylthio, substituted or unsubstituted C1-C 60 heteroaryl, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and

[0269] xd4 can be an integer of 1 to 6.

[0270] In one embodiment, Ar in Formula 501 501 may be selected from:

[0271] naphthyl, heptacenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, naphthyl, heptacenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl,

[0272] each independently substituted with at least one selected from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C20alkyl, C1-C20alkoxy, phenyl, biphenyl, terphenyl, and naphthyl; 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl, and naphthyl; naphthyl, heptacenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenalenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl,

[0273] In one or more embodiments, L in Formula 501 501 to L 503 may each independently be selected from:

[0274] phenylene, naphthylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenanthrylene, anthrylene, fluoranthrylene, benzo[9,10]phenanthrylene, pyrenylene, perylenylene, naphthylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenanthrylene, anthrylene, fluoranthrylene, benzo[9,10]phenanthrylene, pyrenylene, perylenylene,

[0275] each independently substituted with at least one selected from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C20alkyl, C1-C20alkoxy, phenyl, biphenyl, terphenyl, and naphthyl; 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl, and naphthyl; The following are selected from at least one of the following groups: phenylene, perylene, pentofenyl, nehexaphenyl, nepentylphenyl, thiophenyl, furanyl, carbazoleyl, indoleyl, isoindoleyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazoleyl, dibenzocarbazoleyl, dibenzothiophenolyl, and pyridyl; phenylene, naphthylene, fluoreneylene, spirodifluoreneyl, benzo[9,10]fluoreneyl, dibenzo[9,10]fluoreneyl, phenanthreneyl, anthraceneylene, fluorenyleneyl, benzo[9,10]phenanthreneyl, pyreneyleneyl, etc. The compounds are: alkyl, perylene, pentafenyl, hexaphenylene, pentaphenylene, thiopheneyl, furanyl, carbazoyl, indoleyl, isoindoleyl, benzofuranyl, benzothiopheneyl, dibenzofuranyl, dibenzothiopheneyl, benzocarbazoyl, dibenzothiopheneyl, dibenzothiopheneyl, and pyridylene.

[0276] In one or more embodiments, R in Formula 501 501 and R 502 Each can be independently selected from:

[0277] Phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, phenanthryl, anthracene, fluoranyl, benzo[9,10]phenanthryl, pyrene alkyl, peryl, pentyranyl, hexaphenyl, pentaphenyl, thienyl, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, and pyridyl; and

[0278] All are substituted with groups ranging from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amido, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, pyrene, alkyl, peryl, pentyranyl, hexaphenyl, pentaphenyl, thienyl, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridyl and -Si(Q) 31 (Q) 32 (Q) 33 The following are selected from at least one of the following: phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, phenanthryl, anthraceneyl, fluoranthraceneyl, benzo[9,10]phenanthryl, pyreneyl, phenyl, perylenyl, pentaphenyl, hexacenyl, pentacenyl, thiophenyl, furanyl, carbazolyl, indolyl, isoindolyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazolyl, dibenzocarbazolyl, dibenzosilolyl, and pyridyl, and

[0279] Q 31 to Q 33 may each independently be selected from substituted or unsubstituted C1-C 10 alkyl, C1-C 10 alkoxy, phenyl, biphenyl, terphenyl, and naphthyl.

[0280] In one or more embodiments, xd4in Formula 501 can be 2, but embodiments of the present disclosure are not limited thereto.

[0281] For example, the fluorescent dopant can be selected from the following compounds FD1 to FD23:

[0282]

[0283]

[0284]

[0285] In one or more embodiments, the fluorescent dopant can be selected from the following compounds, but embodiments of the present disclosure are not limited thereto:

[0286]

[0287] The delayed fluorescent dopant can include a compound represented by the following Formula 502:

[0288] Formula 502

[0289]

[0290] In Formula 502,

[0291] A 501 to A 503 may each independently be C5-C 60 carbocyclyl, or C1-C 60 heterocyclyl,

[0292] L 501 to L 505 may each independently be selected from substituted or unsubstituted C3-C 10 cycloalkylene, substituted or unsubstituted C1-C 10 heterocycloalkylene, substituted or unsubstituted C3-C 10 cycloalkenylene, substituted or unsubstituted C1-C 10Heterocyclic alkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C1-C 60 Hybrid aryl, substituted or unsubstituted divalent non-aromatic condensed polycyclic groups and substituted or unsubstituted divalent non-aromatic condensed heterocyclic groups,

[0293] a501 to a505 can each be an independent integer from 0 to 3.

[0294] R 503 To R 507 Each can be independently selected from substituted or unsubstituted C3-C. 10 Alkyl, substituted or unsubstituted C3-C 10 cycloalkyl, substituted or unsubstituted C1-C 10 Heterocyclic alkyl, substituted or unsubstituted C3-C 10 Cycloalkenyl, substituted or unsubstituted C1-C 10 Heterocyclic alkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C6-C 60 aryloxy, substituted or unsubstituted C6-C 60 Arylthio, substituted or unsubstituted C1-C 60 Heteroaryl, substituted or unsubstituted monovalent nonaromatic condensed polycyclic groups, and substituted or unsubstituted monovalent nonaromatic condensed heterocyclic groups, and

[0295] c11 to c13 can each be an independent integer from 0 to 6.

[0296] In one embodiment, A in Equation 502 501 To A 503 Each of these can be independently selected from benzene, naphthalene, heptadene, fluorene, spirodifluorene, benzo[a]fluorene, dibenzo[a]fluorene, phenanthracene, anthracene, fluoranthracene, benzo[9,10]phenanthrene, pyrene, And tetraphenyl, fentanyl, perylene, pentophenone, indene-anthracene, indene-phenanthrene, and groups represented by the following formula 503:

[0297] Formula 503

[0298]

[0299] In Equation 503,

[0300] A 504 To A 506 All can be referenced through A in combination formula 502 501 To understand using the provided description,

[0301] L 504 To L 508 All can be obtained by referring to L in Formula 502. 501Provided descriptions to understand,

[0302] a504 to a508 can each be understood by referring to the provided descriptions in a501 in Formula 502,

[0303] R 506 to R 510 can each be understood by referring to the provided descriptions in R 503 in Formula 502, and

[0304] c14 to c16 can each be understood by referring to the provided descriptions in c11 in Formula 502.

[0305] In one or more embodiments, L 501 to L 505 can each be understood by referring to their respective descriptions provided above.

[0306] In one or more embodiments, R 503 to R 507 may each be independently selected from:

[0307] methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, s-butyl, t-butyl, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzo fluorenyl, dibenzo fluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, perylenyl, pentaphenyl, hexa perylenyl, penta perylenyl, thiophenyl, furanyl, carbazolyl, indolyl, isoindolyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazolyl, dibenzocarbazolyl, dibenzosilolyl, and pyridyl; and

[0308] each substituted with from zero to five of deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzo fluorenyl, dibenzo fluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, perylenyl, pentaphenyl, hexa perylenyl, penta perylenyl, thiophenyl, furanyl, carbazolyl, indolyl, isoindolyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazolyl, dibenzocarbazolyl, dibenzosilolyl, pyridyl, and -Si(Q 31 )(Q 32 )(Q 33methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, s-butyl, t-butyl, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzo fluorenyl, dibenzo fluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, perylenyl, pentaphenyl, hexa perylenyl, pentacene, hexacene, thiophenyl, furanyl, carbazolyl, indolyl, isoindolyl, benzofuranyl, benzothiophenyl, dibenzofuranyl, dibenzothiophenyl, benzocarbazolyl, dibenzocarbazolyl, dibenzosilolyl, and pyridyl, and

[0309] Q 31 to Q 33 may each independently be selected from C1-C 10 alkyl, C1-C 10 alkoxy, phenyl, biphenyl, terphenyl, and naphthyl.

[0310] In one embodiment, c11 to c13 in formula 502 can be 0 or 1, but embodiments of the present disclosure are not limited thereto.

[0311] For example, the delayed fluorescence dopant can be selected from the following compounds FD24 to compound FD26:

[0312]

[0313] The emission layer of the quantum dot light emitting device can include quantum dots. For example, the quantum dot light emitting device can include a quantum dot emission layer. The quantum dot emission layer can include a plurality of quantum dots (inorganic nanoparticles) arranged as a single layer or a plurality of layers.

[0314] The term "quantum dot" as used herein refers to a crystal of a semiconductor compound, and can include any material capable of emitting light of different lengths of emission wavelengths according to the size of the crystal. Thus, the type (or kind) of the compound constituting the quantum dot is not particularly limited.

[0315] In some embodiments, the quantum dot can include a semiconductor compound material selected from a group consisting of a III-VI group semiconductor compound; a II-VI group semiconductor compound; a III-V group semiconductor compound; a IV-VI group semiconductor compound; a IV group element and / or a IV group semiconductor compound; and a mixture thereof.

[0316] For example, the III-VI group semiconductor compound can be selected from a binary compound such as In2S3, and a ternary compound selected from AgInS, AgInS2, CuInS, CuInS2, and a mixture thereof, but embodiments of the present disclosure are not limited thereto.

[0317] ​For example, the II-VI semiconductor compound can be selected from binary compounds selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof, although embodiments of the present disclosure are not limited thereto.

[0318] For example, the III-V semiconductor compound can be selected from binary compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof, although embodiments of the present disclosure are not limited thereto.

[0319] For example, the IV-VI semiconductor compound can be selected from binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof, although embodiments of the present disclosure are not limited thereto.

[0320] For example, the Group IV element and / or Group IV semiconductor compound can be selected from among: a single element selected from among Si, Ge, and mixtures thereof; and a binary compound selected from among SiC, SiGe, and mixtures thereof, but embodiments of the present disclosure are not limited thereto.

[0321] The binary compound, the ternary compound, and / or the quaternary compound can be present in the particle at a uniform concentration, or can be present in the same particle in a state in which the concentration is partially different.

[0322] The quantum dot can have a uniform single structure or a dual core-shell structure. For example, the core-shell can include different materials. For example, the material constituting each of the core and the shell can include different semiconductor compounds.

[0323] The shell of the quantum dot can function as a protective layer for maintaining a semiconductor property by preventing (or reducing) chemical denaturation of the core, and / or can function as a charging layer for imparting an electrophoretic property to the quantum dot. The shell can be a single layer or multiple layers. The interface between the core and the shell can have a concentration gradient in which the concentration of atoms present in the shell decreases toward the center.

[0324] Examples of the shell of the quantum dot can include a metal oxide, a non-metal oxide, a semiconductor compound, and any combination thereof. For example, the metal oxide or the non-metal oxide can include a binary compound (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and / or NiO) or a ternary compound (such as MgAl2O4, CoFe2O4, NiFe2O4, and / or CoMn2O4), but embodiments of the present disclosure are not limited thereto. In some embodiments, the semiconductor compound can include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and / or AlSb, etc., but embodiments of the present disclosure are not limited thereto.

[0325] The diameter of the quantum dot is not particularly limited, but may, for example, be in the range of about 1 nm to about 10 nm. By adjusting the size of the quantum dot, the energy band gap can also be adjusted, thereby obtaining light of various wavelengths in the quantum dot emission layer. Thus, by using quantum dots of different sizes, a display that emits light of various suitable wavelengths can be implemented.

[0326] In some embodiments, the size of the quantum dot can be selected to emit red light, green light, and blue light, thereby constituting a color display. In addition, the size of the quantum dot can be configured to emit white light by combining light of various colors.

[0327] The quantum dots can be, for example, spherical, pyramidal, multi-armed, and / or cubic nanoparticles, nanotubes, nanowires, nanofibers, and / or nanoplatelet particles, but embodiments of the present disclosure are not limited thereto.

[0328] A full width at half maximum (FWHM) of an emission wavelength spectrum of the quantum dots can be about 45 nm or less, for example, can be about 40 nm or less, for example, can be about 30 nm or less. When the FWHM of the emission wavelength spectrum of the quantum dots is in this range, color purity and / or color reproducibility can be improved. In addition, light emitted by such quantum dots is irradiated in all directions, thereby improving a wide viewing angle.

[0329] The quantum dots can be synthesized by a wet-chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, or any suitable process.

[0330] According to the wet-chemical process, a precursor material is added to an organic solvent to grow a particle crystal. When the crystal grows, the organic solvent serves as a dispersant that naturally coordinates with the surface of the quantum dot crystal and controls the growth of the crystal. In this regard, the wet-chemical process can be easily performed compared to a vapor deposition process such as metal organic chemical vapor deposition (MOCVD) and / or molecular beam epitaxy (MBE), and the growth of inorganic nanoparticles can be controlled through a low-cost process.

[0331] Electron transport layer in electron transport region

[0332] The light emitting device 1 can include an electron transport layer in direct contact with the emission layer.

[0333] The electron transport layer can include a twelfth material and a thirteenth material, wherein the twelfth material and the thirteenth material can be different from each other, the twelfth material can include at least one selected from an electron transport organic compound, and the thirteenth material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0334] The term "electron transport organic compound" as used herein refers to a metal-free compound including at least one π electron-depleted nitrogen-containing ring.

[0335] The "π electron-depleted nitrogen-containing ring" means a C1-C 60 heterocyclyl.

[0336] For example, the "π-electron poor nitrogen-containing ring" can be: i) a 5- to 7- membered heteromonocyclic group having at least one *-N= * moiety; ii) a heteropolycyclic group in which two or more 5- to 7-membered heteromonocyclic groups each having at least one *-N= * moiety are condensed with each other; or iii) a 5- to 7-membered heteromonocyclic group in which at least one of the 5- to 7-membered heteromonocyclic groups each having at least one *-N= * moiety is condensed with at least one C5-C 60 a carbocyclyl-condensed heteropolycyclic group.

[0337] Examples of the π-electron poor nitrogen-containing ring include imidazole, pyrazole, thiazole, isothiazole, oxazole, isoxazole, pyridine, pyrazine, pyrimidine, pyridazine, indazole, purine, quinoline, isoquinoline, benzoquinoline, phthalazine, naphthylidine, quinoxaline, quinazoline, cinnoline, phenanthridine, acridine, phenanthroline, phenoxazine, benzimidazole, isobenzothiazole, benzoxazole, isobenzoxazole, triazole, tetrazole, oxadiazole, triazine, thiadiazole, imidazopyridine, imidazopyrimidine, and azacarbazole, but are not limited thereto.

[0338] In some embodiments, the "electron-transporting organic compound" can include a compound represented by the following formula 601:

[0339] Formula 601

[0340] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0341] In formula 601,

[0342] Ar 601 may be a substituted or unsubstituted C5-C 60 carbocyclyl, or a substituted or unsubstituted C1-C 60 heterocyclyl,

[0343] xe11may be 1, 2, or 3,

[0344] L 601 may be selected from substituted or unsubstituted C3-C 10 cycloalkylene, substituted or unsubstituted C1-C 10 heterocycloalkylene, substituted or unsubstituted C3-C 10 cycloalkenylene, substituted or unsubstituted C1-C 10 heterocycloalkenylene, substituted or unsubstituted C6-C 60 arylene, substituted or unsubstituted C1-C 60 heteroarylene, a substituted or unsubstituted divalent non-aromatic condensed polycyclyl, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclyl, ​

[0345] xe1 can be an integer from 0 to 5.

[0346] R 601 It can be selected from substituted or unsubstituted C3-C 10 cycloalkyl, substituted or unsubstituted C1-C 10 Heterocyclic alkyl, substituted or unsubstituted C3-C 10 Cycloalkenyl, substituted or unsubstituted C1-C 10 Heterocyclic alkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C6-C 60 aryloxy, substituted or unsubstituted C6-C 60 Arylthio, substituted or unsubstituted C1-C 60 Heteroaryl, substituted or unsubstituted monovalent nonaromatic condensed polycyclic groups, substituted or unsubstituted monovalent nonaromatic condensed heterocyclic groups, -Si(Q 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) and -P(=O)(Q 601 (Q) 602 ),

[0347] Q 601 To Q 603 Each can be independently C1-C 10 Alkyl, C1-C 10 Alkoxy, phenyl, biphenyl, terphenyl, or naphthyl, and

[0348] xe21 can be an integer from 1 to 5.

[0349] In one embodiment, xe11 numbers of Ar 601 R with xe21 numbers 601 At least one of them may include a nitrogen-containing ring that is π-electron depleted.

[0350] In one embodiment, Ar in Formula 601 601 It can be selected from:

[0351] Phenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, phenanthyl, anthraceneyl, fluoranthyl, benzo[9,10]phenanthyl, pyrene, alkyl, tetraphenyl, francyl, perylene, penfenyl, indoxanthracene, dibenzofuranyl, dibenzothiopheneyl, carbazoyl, imidazoyl, pyrazolyl, thiazoyl, isothiazolyl, oxazolyl, isoxazolyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, indazoleyl, purinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxolinyl, quinazolinyl, cenolinyl, phenanthridine, acridineyl, phenanthroxolinyl, phenazinyl, benzimidazolyl, isobenzothiazoyl, benzooxazolyl, isobenzooxazolyl, triazolyl, tetrazolyl, oxadiazolyl, triazinyl, thiadiazolyl, imidazopyridyl, imidazopyrimidinyl and azacarbazoyl; and

[0352] All are substituted with groups ranging from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amido, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, phenyl, biphenyl, terphenyl, naphthyl, -Si(Q) 31 (Q) 32 (Q) 33 -S(=O)2(Q) 31 ) and -P(=O)(Q 31 (Q) 32 The following are selected from at least one of the following: phenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, phenanthyl, anthraceneyl, fluoranthyl, benzo[9,10]phenanthyl, pyreneyl, The following groups are listed: alkyl, tetraphenyl, francyl, perylene, penfenyl, indanethenyl, dibenzofuranyl, dibenzothiopheneyl, carbazoyl, imidazoyl, pyrazolyl, thiazoyl, isothiazolyl, oxazolyl, isoxazolyl, pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, indazoleyl, purine, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxolinyl, quinazolinyl, cinolinyl, phenanthridine, acridineyl, phenanthroxolinyl, phenazinyl, benzimidazolyl, isobenzothiazoyl, benzooxazolyl, isobenzooxazolyl, triazolyl, tetrazolyl, oxadiazolyl, triazinyl, thiadiazolyl, imidazopyridyl, imidazopyrimidinyl, and azacarbazoyl.

[0353] Q 31 To Q 33 Each can be independently selected from C1-C 10 Alkyl, C1-C 10 Alkoxy, phenyl, biphenyl, terphenyl, and naphthyl.

[0354] When xe11 in equation 601 is 2 or greater, two or more Ar 601 They can be connected to each other via a single key.

[0355] In one or more embodiments, Ar in Formula 601 601 It can be anthracene-based.

[0356] In one or more embodiments, the compound represented by formula 601 can be represented by the following formula 601-1:

[0357] Formula 601-1

[0358]

[0359] In Equation 601-1,

[0360] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and from X 614 To X 616 At least one of the selected options can be N.

[0361] L 611 To L 613 All can be referenced and combined with L 601 To understand using the provided description,

[0362] XE611 to XE613 can all be understood by referring to and combining the description provided in XE1.

[0363] R 611 To R 613 All can be referenced and combined with R 601 The provided description is used to understand, and

[0364] R 614 To R 616 Each group can be independently selected from hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidine, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20 Alkoxy, phenyl, biphenyl, terphenyl, and naphthyl.

[0365] In one embodiment, L in Equation 601 601 L in Equation 601-1 611 To L 613 Each can be independently selected from:

[0366] Phenylidene, naphthylene, fluorene, spirodifluorene, benzo[a]fluorene, dibenzo[a]fluorene, phenanthrene, anthracene, fluorenylanethyl, benzo[9,10]phenanthrene, pyrene, phenanthrene phenylene, naphthylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenanthrylene, anthrylene, fluoranthenylene, benzo[9,10]phenanthrylene, pyrenylene,

[0367] substituted with at least one selected from the group consisting of deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C6 alkyl, C1-C6 alkoxy, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, 20 alkyl, C1-C 20 alkoxy, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirobifluorenyl, benzofluorenyl, dibenzofluorenyl, phenanthryl, anthryl, fluoranthenyl, benzo[9,10]phenanthryl, pyrenyl, phenylene, naphthylene, fluorenylene, spirobifluorenylene, benzofluorenylene, dibenzofluorenylene, phenanthrylene, anthrylene, fluoranthenylene, benzo[9,10]phenanthrylene, pyrenylene, Perylene, pentafenyl, hexaphenylene, pentaphenylene, thiopheneyl, furanyl, carbazolyl, indoleyl, isoyindoleyl, benzofuranyl, benzothiopheneyl, dibenzofuranyl, dibenzothiopheneyl, benzocarbazolyl, dibenzocarbazolyl, dibenzothiopheneyl, pyridinyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiazolyl, oxadiazolyl , pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxalinyl, quinoxalinyl, phenanthreneridinyl, acridineyl, phenanthrene-pyridinyl, benzimidazolyl, isobenzothiazolyl, benzimidazolyl, isobenzoxazolyl, isobenzoxazolyl, triazoleyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and zazacarbazolyl,

[0368] However, the embodiments disclosed herein are not limited thereto.

[0369] In one or more embodiments, xe1 in Formula 601 and xe611 to xe613 in Formula 601-1 can each be independently 0, 1 or 2.

[0370] In one or more embodiments, R in Formula 601 601 R in Equation 601-1 611 To R 613 Each can be independently selected from:

[0371] Phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, phenanthryl, anthracene, fluoranyl, benzo[9,10]phenanthryl, pyrene Peryl, pentylenyl, hexaphenyl, pentaphenyl, thienyl, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridinyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiadiazolyl, oxadiazolyl Pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxolinyl, quinazolinyl, cinolinyl, phenanthridineyl, acridineyl, phenanthroxolinyl, phenazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and azacarbazolyl;

[0372] All are substituted with groups ranging from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amido, hydrazine, hydrazone, C1-C 20 Alkyl, C1-C 20Alkoxy, phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, pyrene, Peryl, pentylenyl, hexaphenyl, pentaphenyl, thiophene, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridinyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiadiazolyl, oxadiazolyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalyl The phenyl, biphenyl, terphenyl, naphthinyl, quinoxalinyl, quinazolinyl, terazolinyl, phenanthrynyl, acridineyl, phenanthrynyl, phenazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridyl, imidazopyrimidinyl, and azacarbazolyl are selected from at least one of the following: phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, spirodifluorenyl, benzo[9,10]fluorenyl, dibenzo[9,10]fluorenyl, pyrene, Peryl, pentylenyl, hexaphenyl, pentaphenyl, thienyl, furanyl, carbazole, indole, isoindole, benzofuranyl, benzothiophene, dibenzofuranyl, dibenzothiophene, benzocarbazole, dibenzocarbazole, dibenzothiophene, pyridyl, imidazolyl, pyrazolyl, thiazolyl, isothiazolyl, oxazolyl, isoxazolyl, thiadiazolyl, oxadiazolyl Pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, phthalazinyl, naphridinyl, quinoxolinyl, quinazolinyl, cenolinyl, phenanthridineyl, acridineyl, phenanthroxolinyl, phenazinyl, benzimidazolyl, isobenzothiazolyl, benzoxazolyl, isobenzoxazolyl, triazolyl, tetrazolyl, imidazopyridinyl, imidazopyrimidinyl, and azacarbazolyl; and

[0373] -S(=O)2(Q 601 ) and -P(=O)(Q 601 (Q) 602 ),and

[0374] Q 601 and Q 602 Same as described above.

[0375] The electron transport region may include at least one compound selected from compounds ET1 to ET38 below, but embodiments of this disclosure are not limited thereto:

[0376]

[0377]

[0378]

[0379]

[0380] In one or more embodiments, the electron transport region can include at least one selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), and the following Alq3, BAlq, 3-(diphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), NTAZ, T2T, and TPM-TAZ:

[0381]

[0382] In the electron transport layer, the volume of the twelfth material can be greater than the volume of the thirteenth material. In some embodiments, the volume ratio of the twelfth material to the thirteenth material in the electron transport layer can be in the range of about 99:1 to about 50:50.

[0383] The thickness of the electron transport layer can be in the range of about 0.1 nm to about 100 nm. When the thickness of the electron transport layer is in the above range, satisfactory (or suitable) electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0384] Electron injection layer in the electron transport region

[0385] The light emitting device 1 can include an electron injection layer between the second electrode 190 and the nth emission layer or between the n-1 charge generation unit CGU(n-1) and the n-1 emission layer.

[0386] The electron injection layer can include an eighth material, and the eighth material can include a halide of an alkali metal, a halide of an alkaline earth metal, a halide of a lanthanide metal, or any combination thereof.

[0387] In one embodiment, the electron injection layer can include (e.g., can consist of) an eighth material. In some embodiments, the electron injection layer can not include any material other than the eighth material.

[0388] In another embodiment, the electron injection layer can further include a ninth material, the eighth material and the ninth material can be different from each other, and the ninth material can include an alkali metal, an alkaline earth metal, a lanthanide metal, or any combination thereof.

[0389] In some embodiments, the eighth material can be a compound having a wide band gap of about 7 eV or more. Accordingly, the eighth material can substantially not absorb light.

[0390] In some embodiments, the ninth material can include a compound having a low work function of about 2.6 eV or less.

[0391] For example, the eighth material can be represented by Formula X, and the ninth material can be represented by Formula Y:

[0392] Formula X

[0393] A n B m

[0394] Formula Y

[0395] C.

[0396] In Formula X and Formula Y,

[0397] A and C can each independently include an alkali metal, an alkaline earth metal, a lanthanide metal, or any combination thereof,

[0398] B can be a halogen,

[0399] n and m can each independently be an integer of 1 or greater, such that the eighth material is neutral (e.g., the sum of n and m results in the eighth material having a neutral charge), and

[0400] A and C can be different from each other.

[0401] When A and C are different from each other, the ninth material can supplement light absorption according to a narrow bandgap of the eighth material.

[0402] For example, in Formula X and Formula Y, A can include Li, Na, K, Rb, Cs, or any combination thereof; B can include F, Cl, Br, I, or any combination thereof; n and m can each be 1; and C can include La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or any combination thereof.

[0403] In some embodiments, the eighth material can include NaI, KI, RbI, CsI, NaCl, KCl, RbCl, CsCl, NaF, KF, RbF, CsF, or any combination thereof; and the ninth material can include La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or any combination thereof.

[0404] In the electron injection layer, the volume of the eighth material can be equal to or greater than the volume of the ninth material. In some embodiments, the volume of the ninth material in the electron injection layer can be greater than 0% and less than or equal to 50%. For example, the volume of the ninth material in the electron injection layer can be 5% or greater to 10% or less, although embodiments are not limited thereto. When the volume of the ninth material is within the above range, the ninth material can be sufficient (or suitable) to complement light absorption according to the narrow band gap of the eighth material.

[0405] The thickness of the electron injection layer can be in the range of about 0.1 nm to about 5 nm. When the thickness of the electron injection layer is within the above range, satisfactory (or suitable) electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0406] Metal-containing material in the electron transport region

[0407] In addition to the above-described materials, the electron transport region can further include a metal-containing material.

[0408] The metal-containing material can include at least one selected from an alkali metal complex and an alkaline earth metal complex.

[0409] The ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth metal complex can be selected from a hydroxyquinoline, a hydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, a hydroxyphenanthridine, a hydroxyphenyl oxazole, a hydroxyphenyl thiazole, a hydroxyphenyl oxadiazole, a hydroxyphenyl thiadiazole, a hydroxyphenyl pyridine, a hydroxyphenyl benzimidazole, a hydroxyphenyl benzothiazole, a bipyridine, a phenanthroline, and a cyclopentadiene, although embodiments of the present disclosure are not limited thereto.

[0410] For example, the metal-containing material can include a Li complex. The Li complex can include, for example, the following compound ET-D1 (lithium 8-hydroxyquinoline, LiQ) and / or the compound ET-D2:

[0411]

[0412] Charge generation unit

[0413] The light emitting device 1 includes a number of n-1 charge generation units between adjacent light emitting units.

[0414] In some embodiments, the n-1th charge generation unit CGU(n-1) is included between the nth light emitting unit ELU(n) and the n-1th light emitting unit. For example, when n is 2, the first electrode 110, the first light emitting unit ELU1, the first charge generation unit, and the second light emitting unit are sequentially positioned. For another example, when n is 3, the first electrode 110, the first light emitting unit ELU1, the first charge generation unit, the second light emitting unit, the second charge generation unit, and the third light emitting unit are sequentially positioned.

[0415] At least one of the charge generation units includes an intermediate layer between the n-type charge generation layer and the p-type charge generation layer. In some embodiments, at least one of the charge generation units includes the n-type charge generation layer, the p-type charge generation layer, and the intermediate layer between the n-type charge generation layer and the p-type charge generation layer.

[0416] Referring to Figure 2 , the n-1th charge generation unit CGU(n-1) (see Figure 1 ) includes an n-1th n-type charge generation layer nCGL(n-1), an n-1th p-type charge generation layer pCGL(n-1), and an n-1th intermediate layer IL(n-1) between the n-1th n-type charge generation layer nCGL(n-1) and the n-1th p-type charge generation layer pCGL(n-1).

[0417] The p-type charge generation layer includes a first material and a second material.

[0418] The first material can include a hole-transporting organic compound, an inorganic insulating compound, or any combination thereof. The hole-transporting organic compound can be understood by referring to its corresponding description provided herein.

[0419] The second material can include at least one selected from inorganic semiconductor compounds.

[0420] A volume of the first material can be equal to or greater than a volume of the second material.

[0421] In one embodiment, the first material can include a hole-transporting organic compound, and a volume ratio of the first material to the second material can be in a range of about 99:1 to about 80:20, although embodiments are not limited thereto.

[0422] In another embodiment, the first material can include an inorganic insulating compound, and a volume ratio of the first material to the second material can be in a range of about 99:1 to about 50:50, although embodiments are not limited thereto.

[0423] A thickness of the p-type charge generation layer can be in a range of about 0.1 nm to about 200 nm.

[0424] The intermediate layer can include (e.g., can consist of) a third material.

[0425] The third material can be one compound selected from organic compounds, inorganic semiconductor compounds, and inorganic insulating compounds.

[0426] In some embodiments, the third material can be an organic compound, although embodiments are not limited thereto.

[0427] For example, the third material can have a band gap of about 2.5 eV or more, for example, about 4.0 eV or more, but embodiments are not limited thereto.

[0428] For another example, the third material can be an organic insulating compound.

[0429] For another example, the third material can include at least one selected from a quinone derivative such as TCNQ (Tetracyanoquinodimethane) and / or F4-TCNQ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane), HAT-CN (1,4,5,8,9,12-Hexaazatriphenylenehexacarbonitrile), and a compound represented by Formula 221, but embodiments are not limited thereto.

[0430] A lowest unoccupied molecular orbital (LUMO) energy level of the third material can be about -4.5 eV to about -6.5 eV. In some embodiments, the LUMO energy level of the third material can be about -4.5 eV to about -5.5 eV, but embodiments are not limited thereto. When the LUMO energy level of the third material is in the above range, diffusion of the fourth material included in the n-type charge generation layer into the p-type charge generation layer can be prevented (or reduced).

[0431] The thickness of the intermediate layer can be in a range of about 0.1 nm to about 20 nm.

[0432] The n-type charge generation layer can include a fourth material and a fifth material.

[0433] The fourth material can include an alkali metal, an alkaline earth metal, a lanthanide metal, a transition metal, a post-transition metal, or any combination thereof.

[0434] The fifth material can include at least one selected from an electron-transporting organic compound. The electron-transporting organic compound can be understood by referring to its corresponding description provided herein.

[0435] A LUMO energy level of the fifth material can be less than a LUMO energy level of the third material. In some embodiments, a difference between the LUMO energy level of the fifth material and the LUMO energy level of the third material can be about 1 eV or less. When the difference between the LUMO energy level of the fifth material and the LUMO energy level of the third material is in the above range, electrons generated from the n-type charge generation layer can be well (properly) transported via the intermediate layer.

[0436] The thickness of the n-type charge generation layer can be in a range of about 0.1 nm to about 20 nm.

[0437] The n-type charge generation layer can be in direct contact with the intermediate layer.

[0438] In some embodiments, the n-type charge generation layer can be in direct contact with the electron injection layer or the electron transport layer. For example, the n-type charge generation layer included in the n-1th charge generation unit CGU(n-1) can be in direct contact with the electron injection layer or the electron transport layer included in the n-1th light emitting unit.

[0439] The p-type charge generation layer can be in direct contact with the intermediate layer.

[0440] In some embodiments, the p-type charge generation layer can be in direct contact with the hole injection layer or the hole transport layer. For example, the p-type charge generation layer included in the n-1th charge generation unit CGU(n-1) can be in direct contact with the hole injection layer or the hole transport layer included in the nth light emitting unit ELU(n).

[0441] When a voltage is applied to the light emitting device 1, the fourth material included in the n-type charge generation layer can diffuse to the p-type charge generation layer. However, the intermediate layer between the n-type charge generation layer and the p-type charge generation layer can prevent (or block) the diffusion of the fourth material. Accordingly, the deterioration of the interface between each layer can be prevented (or reduced), and the increase in driving voltage can be prevented (or reduced), and thus, the light emitting device 1 can provide improved lifespan and / or luminance.

[0442] The second electrode 190

[0443] The second electrode 190 is located on the n-th light emitting unit ELU(n). The second electrode 190 can be a cathode as an electron injection electrode, in which case the material used to form the second electrode 190 can be selected from a metal, an alloy, a conductive compound, and combinations thereof, having a relatively low work function.

[0444] The second electrode 190 can include at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), ytterbium (Yb), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), silver-ytterbium (Ag-Yb), ITO, and IZO, although embodiments of the present disclosure are not limited thereto. The second electrode 190 can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0445] The second electrode 190 can have a single layer structure or a multi-layer structure including two or more layers.

[0446] The thickness of the second electrode 190 can be in the range of about 5 nm to about 20 nm. When the thickness of the second electrode 190 satisfies the range described above, light absorption at the second electrode 190 can be minimized (or reduced), and satisfactory (or appropriate) electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0447] Apparatus

[0448] The light emitting device can be included in various suitable apparatuses. For example, a light emitting apparatus, an authentication apparatus, and / or an electronic apparatus including the light emitting device can be provided.

[0449] Light emitting apparatus

[0450] Reference Figure 3 The light emitting apparatus 3 according to an embodiment of the disclosure will be described in more detail.

[0451] In the light emitting apparatus 3, the color filter 340 can be located in at least one traveling direction of light emitted from the light emitting device.

[0452] For example, the light emitting device can include a first electrode 321, a first light emitting unit 322, a first charge generation unit, a second light emitting unit 323, and a second electrode 324. For example, the first light emitting unit 322 and the second light emitting unit 323 can each emit blue light, but embodiments are not limited thereto.

[0453] The first substrate 310 of the light emitting device can include a plurality of sub-pixel regions, and the color filter 340 can include a plurality of color filter regions 341, 342, and 343 respectively corresponding to the plurality of sub-pixel regions. The pixel defining film 330 can be formed between the plurality of sub-pixel regions to define each sub-pixel region. The color filter 340 can include a light blocking pattern 344 located between the plurality of color filter regions 341, 342, and 343.

[0454] The plurality of color filter regions 341, 342, and 343 can include a first color filter region emitting (to emit) first color light, a second color filter region emitting (to emit) second color light, and a third color filter region emitting (to emit) third color light, and the first color light, the second color light, and the third color light can have different maximum emission wavelengths from each other. For example, the first color light can be red light, the second color light can be green light, and the third color light can be blue light, but embodiments are not limited thereto,

[0455] For example, each of the plurality of color filter regions 341, 342, and 343 can include quantum dots, or only a part of the plurality of color filter regions 341, 342, and 343 can include quantum dots.

[0456] In one embodiment, the first color filter region can include red quantum dots, the second color filter region can include green quantum dots, and the third color filter region can not include quantum dots. In this case, the light emitting device can emit first light, the first color filter region can absorb the first light to emit first first-color light, the second color filter region can absorb the first light to emit second first-color light, and the third color filter region can transmit the first light without any change. In this case, the first first-color light, the second first-color light, and the first light can have different maximum emission wavelengths from each other. For example, the first light can be blue light, the first first-color light can be red light, and the second first-color light can be green light, but embodiments are not limited thereto.

[0457] In another embodiment, the first color filter region can include red quantum dots, the second color filter region can include green quantum dots, and the third color filter region can include blue quantum dots. In this case, the light emitting device can emit first light, the first color filter region can absorb the first light to emit first first-color light, the second color filter region can absorb the first light to emit second first-color light, and the third color filter region can absorb the first light to emit third first-color light. In this case, the first first-color light, the second first-color light, and the third first-color light can have different maximum emission wavelengths from each other. For example, the first light can be blue light, the first first-color light can be red light, the second first-color light can be green light, and the third first-color light can be blue light, but embodiments are not limited thereto.

[0458] The quantum dots can be understood by referring to their description provided herein.

[0459] Each of the first color filter region, the second color filter region, and the third color filter region can include one or more scatterers, but embodiments are not limited thereto.

[0460] The light emitting apparatus 3 can further include a thin film transistor in addition to the light emitting device. The thin film transistor can include a source electrode, a drain electrode, and an active layer, and the source electrode or the drain electrode (e.g., the drain electrode) can be electrically connected to the first electrode 321 or the second electrode 324 (e.g., the first electrode 321) of the light emitting device.

[0461] The thin film transistor can further include a gate electrode and / or a gate insulating layer, etc.

[0462] The active layer can include crystalline silicon, amorphous silicon, organic semiconductor, and / or oxide semiconductor, etc., but embodiments of the disclosure are not limited thereto.

[0463] The light emitting apparatus 3 can further include a sealing portion that seals the light emitting device. The sealing portion can be located between the color filter 340 and the light emitting device. The sealing portion can allow an image from the light emitting device to be realized, and can block (or reduce) external air and moisture from penetrating into the light emitting device. The sealing portion can be a sealing substrate including transparent glass and / or a plastic substrate. The sealing portion can be a thin film encapsulation layer including a plurality of organic layers and / or a plurality of inorganic layers. When the sealing portion is a thin film encapsulation layer, the entire planar light emitting apparatus 3 can be flexible.

[0464] The light emitting apparatus 3 can be used as various suitable displays and / or light sources, etc.

[0465] Authentication apparatus

[0466] The authentication apparatus can be a biometric authentication apparatus that authenticates an individual, for example, by using biometric information of a living body (e.g., a fingertip and / or a pupil, etc.).

[0467] The authentication apparatus can further include a biometric information collector in addition to the light emitting device.

[0468] Electronic apparatus

[0469] The electronic apparatus can be applied to a personal computer (e.g., a mobile personal computer), a mobile phone, a digital camera, an electronic notebook, an electronic dictionary, an electronic game machine, a medical instrument (e.g., an electronic thermometer, a sphygmomanometer, a blood glucose meter, a pulse measurement device, a pulse wave measurement device, an electrocardiogram (ECG) display, an ultrasonic diagnostic device, and / or an endoscope display), a fish finder, various measuring instruments, a meter (e.g., a meter for a vehicle, an airplane, and / or a ship), and / or a projector, etc., but embodiments of the present disclosure are not limited thereto.

[0470] Preparation method

[0471] The layers included in the light emitting unit and the layers constituting the charge generating unit can be formed in a specific region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser induced thermal imaging.

[0472] When the layers included in the light emitting unit and the layers constituting the charge generating unit are formed by vacuum deposition, vacuum deposition can be performed at a deposition temperature of about 100°C to about 500°C, a vacuum degree of about 10 -8 tor to about 10 -3 tor, and a deposition speed of about 0.1 / second to about / second, by considering the materials included in the layers to be formed and the structure of the layers to be formed.

[0473] When forming the layers included in the light emitting unit and the layers constituting the charge generating unit by spin coating, spin coating can be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and at a heat treatment temperature of about 80 °C to about 200 °C, by considering the materials included in the layers to be formed and the structure of the layers to be formed.

[0474] General definitions of substituents

[0475] As used herein, the term "C1-C 60 alkyl" refers to a linear or branched aliphatic saturated hydrocarbon monovalent radical having 1 to 60 carbon atoms, and non-limiting examples thereof include methyl, ethyl, propyl, isobutyl, sec-butyl, t-butyl, pentyl, isopentyl, and hexyl. As used herein, the term "C1-C 60 alkylene" refers to a divalent radical having the same structure as a C1-C 60 alkyl group.

[0476] As used herein, the term "C2-C 60 alkenyl" refers to a hydrocarbon radical having at least one carbon-carbon double bond in, for example, a C2-C 60 alkyl group, and non-limiting examples thereof include ethenyl, propenyl, and butenyl. As used herein, the term "C2-C 60 alkenylene" refers to a divalent radical having the same structure as a C2-C 60 alkenyl group.

[0477] As used herein, the term "C2-C 60 alkynyl" refers to a hydrocarbon radical having at least one carbon-carbon triple bond in, for example, a C2-C 60 alkyl group, and non-limiting examples thereof include ethynyl and propynyl. As used herein, the term "C2-C 60 alkynylene" refers to a divalent radical having the same structure as a C2-C 60 alkynyl group.

[0478] As used herein, the term "C1-C 60 alkoxy" refers to a monovalent radical represented by -OA 101 (wherein A 101 is a C1-C 60 alkyl group), and non-limiting examples thereof include methoxy, ethoxy, and isopropoxy.

[0479] As used herein, the term "C3-C 10 cycloalkyl" refers to a monovalent saturated hydrocarbon monocyclic radical having 3 to 10 carbon atoms, and non-limiting examples thereof include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cycloheptyl. As used herein, the term "C3-C 10 cycloalkylene" refers to a divalent radical having the same structure as a C3-C10 Cycloalkyl has the same structure as a divalent radical.

[0480] The term "Ci-C 10 Heterocycloalkyl refers to a monovalent saturated monocyclic radical having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and from 1 to 10 carbon atoms as the remaining ring-forming atoms, and non-limiting examples include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, and tetrahydrothiophenyl. The term "Ci-C 10 Heterocycloalkyl has the same structure as a divalent radical. 10 Heterocycloalkyl has the same structure as a divalent radical.

[0481] The term "C3-C 10 Cycloalkenyl refers to a monovalent monocyclic radical having from 3 to 10 carbon atoms in its ring and at least one carbon-carbon double bond and no aromaticity, and non-limiting examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl. The term "C3-C 10 Cycloalkenyl has the same structure as a divalent radical. 10 Cycloalkenyl has the same structure as a divalent radical.

[0482] The term "Ci-C 10 Heterocycloalkenyl refers to a monovalent monocyclic radical having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, from 1 to 10 carbon atoms as the remaining ring-forming atoms, and at least one double bond in its ring. Ci-C 10 Non-limiting examples of heterocycloalkenyl include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl. The term "Ci-C 10 Heterocycloalkenyl has the same structure as a divalent radical. 10 Heterocycloalkenyl has the same structure as a divalent radical.

[0483] The term "C6-C 60 Aryl refers to a monovalent radical having a carbocyclic aromatic ring system including from 6 to 60 carbon atoms. C6-C 60 Non-limiting examples of aryl include phenyl, naphthyl, anthryl, phenanthryl, pyrenyl, and Aryl has the same structure as a divalent radical. When C6-C 60 Aryl has the same structure as a divalent radical. When C6-C 60 Aryl has the same structure as a divalent radical. When C6-C 60 Aryl and C6-C 60 When C6-C

[0484] The term "C1-C60heteroaryl" as used herein refers to a monovalent radical having a heteroaromatic ring system having at least one heteroatom selected from N, O, Si, P, and S as ring-forming atoms in addition to 1 to 60 carbon atoms as remaining ring-forming atoms. Non-limiting examples of C1-C60heteroaryl include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, and isoquinolinyl. The term "C1-C60heteroaryloxy" as used herein refers to a monovalent radical represented by -OA 60 60 60 60 60 60 When C1-C60heteroaryl and C1-C60heteroaryloxy each independently include two or more rings, the respective rings can be condensed (fused) to each other.

[0485] The term "C6-C60aryloxy" as used herein refers to a monovalent radical represented by -OA 60 102 102 60 60 103 103 60

[0486] The term "C1-C60heteroaryloxy" as used herein refers to a monovalent radical represented by -OA 60 104 104 60 60 105 105 60

[0487] The term "monovalent non-aromatic condensed polycyclic radical" as used herein refers to a monovalent radical having two or more rings condensed to each other, only carbon atoms (e.g., having 8 to 60 carbon atoms) as ring-forming atoms, and no aromaticity in its entire molecular structure (e.g., the molecular structure as a whole does not have aromaticity). A non-limiting example of monovalent non-aromatic condensed polycyclic radical is fluorenyl. The term "divalent non-aromatic condensed polycyclic radical" as used herein refers to a divalent radical having the same structure as that of monovalent non-aromatic condensed polycyclic radical.

[0488] ​​​​​​​​​​​​​​​​​​​​​The term "monovalent non-aromatic condensed heteropolycyclic group" as used herein refers to a monovalent group having two or more rings condensed with each other, at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom in addition to carbon atoms (e.g., 1 to 60 carbon atoms), and having no aromaticity in its entire molecular structure (e.g., the molecular structure as a whole has no aromaticity). A non-limiting example of a monovalent non-aromatic condensed heteropolycyclic group is a carbazolyl group. The term "divalent non-aromatic condensed heteropolycyclic group" as used herein refers to a divalent group having the same structure as that of a monovalent non-aromatic condensed heteropolycyclic group.

[0489] The term "C5-C 60 carbocyclic group" refers to a monocyclic or polycyclic group having 5 to 60 carbon atoms, in which the ring-forming atoms are only carbon atoms. The term "C5-C 60 carbocyclic group" refers to an aromatic carbocyclic group or a non-aromatic carbocyclic group. The C5-C 60 carbocyclic group can be a ring (such as benzene), a monovalent group (such as phenyl), or a divalent group (such as phenylene). In one or more embodiments, depending on the number of substituents attached to the C5-C 60 carbocyclic group, the C5-C 60 carbocyclic group can be a trivalent group or a tetravalent group.

[0490] The term "C1-C 60 heterocyclic group" refers to a group having the same structure as a C5-C 60 carbocyclic group except that at least one heteroatom selected from N, O, Si, P, and S is used as a ring-forming atom in addition to carbon atoms (the number of carbon atoms can be in the range of 1 to 60).

[0491] In this specification, a substituted C5-C 60 carbocyclic group, a substituted C1-C 60 heterocyclic group, a substituted C1-C 20 alkylene group, a substituted C2-C 20 alkenylene group, a substituted C3-C 10 cycloalkylene group, a substituted C1-C 10 heterocycloalkylene group, a substituted C3-C 10 cycloalkenylene group, a substituted C1-C 10 heterocycloalkenylene group, a substituted C6-C 60 arylene group, a substituted C1-C 60 heteroarylene group, a substituted divalent non-aromatic condensed polycyclic group, a substituted divalent non-aromatic condensed heteropolycyclic group, a substituted C1-C 60 alkyl group, a substituted C2-C 60 alkenyl group, a substituted C2-C 60alkynyl, substituted C1-C 60 alkoxy, substituted C3-C 10 cycloalkyl, substituted C1-C 10 heterocycloalkyl, substituted C3-C 10 cycloalkenyl, substituted C1-C 10 heterocycloalkenyl, substituted C6-C 60 aryl, substituted C6-C 60 aryloxy, substituted C6-C 60 aralkyl, substituted C1-C 60 heteroaryl, substituted C1-C 60 heteroaryloxy, substituted C1-C 60 heteroarylthio, substituted monovalent non-aromatic condensed polycyclic group and substituted monovalent non-aromatic condensed heteropolycyclic group can be selected from at least one of:

[0492] deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C 60 alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl and C1-C 60 alkoxy;

[0493] each of which is independently substituted with at least one of deuterium, -F, -CI, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C3-C 10 cycloalkyl, C1-C 10 heterocycloalkyl, C3-C 10 cycloalkenyl, C1-C 10 heterocycloalkenyl, C6-C 60 aryl, C6-C 60 aryloxy, C6-C 60 aralkyl, C1-C 60 heteroaryl, C1-C 60 heteroaryloxy, C1-C 60 heteroarylthio, monovalent non-aromatic condensed polycyclic group, monovalent non-aromatic condensed heteropolycyclic group, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ) and -P(=O)(Q 11 )(Q 12 ) selected from at least one of C1-C 60 alkyl, C2-C60 alkenyl, C2-C 60 alkynyl and C1-C 60 alkoxy;

[0494] C3-C 10 cycloalkyl, C1-C 10 heterocycloalkyl, C3-C 10 cycloalkenyl, C1-C 10 heterocycloalkenyl, C6-C 60 aryl, C6-C 60 aryloxy, C6-C 60 aralkyl, C1-C 60 heteroaryl, C1-C 60 heteroaryloxy, C1-C 60 heteroaralkyl, monovalent non-aromatic condensed polycyclic group and monovalent non-aromatic condensed heteropolycyclic group;

[0495] each of which is independently selected from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazone, C1-C 60 alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl, C1-C 60 alkoxy, C3-C 10 cycloalkyl, C1-C 10 heterocycloalkyl, C3-C 10 cycloalkenyl, C1-C 10 heterocycloalkenyl, C6-C 60 aryl, C6-C 60 aryloxy, C6-C 60 aralkyl, C1-C 60 heteroaryl, C1-C 60 heteroaryloxy, C1-C 60 heteroaralkyl, monovalent non-aromatic condensed polycyclic group, monovalent non-aromatic condensed heteropolycyclic group, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O)2(Q 21 ) and -P(=O)(Q 21 )(Q 22 ) selected from at least one of C3-C 10 cycloalkyl, C1-C 10 heterocycloalkyl, C3-C 10 cycloalkenyl, C1-C 10heteroaryloxy, C1-C 60 aryl, C6-C 60 aryloxy, C6-C 60 arylthio, C1-C 60 heteroaryl, C1-C 60 heteroaryloxy, C1-C 60 heteroarylthio, monovalent non-aromatic condensed polycyclic group, and monovalent non-aromatic condensed heteropolycyclic group; and

[0496] -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O)2(Q 31 ), and -P(=O)(Q 31 )(Q 32 ), and

[0497] Q 11 to Q 13 , Q 21 to Q 23 , and Q 31 to Q 33 may each independently be selected from the group consisting of hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amidino, hydrazino, hydrazono, C1-C 60 alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl, C1-C 60 alkoxy, C3-C 10 cycloalkyl, C1-C 10 heterocycloalkyl, C3-C 10 cycloalkenyl, C1-C 10 heterocycloalkenyl, C6-C 60 aryl, C1-C 60 heteroaryl, C1-C 60 heteroaryloxy, C1-C 60 heteroarylthio, monovalent non-aromatic condensed polycyclic group, monovalent non-aromatic condensed heteropolycyclic group, C1-C 60 alkyl substituted with at least one selected from the group consisting of deuterium, -F, and cyano, C6-C 60 aryl substituted with at least one selected from the group consisting of deuterium, -F, and cyano, biphenyl, and terphenyl.

[0498] The term "Ph" as used herein means phenyl, the term "Me" as used herein means methyl, the term "Et" as used herein means ethyl, the term "tert-Bu" or "Bu" as used herein means tert-butyl, the term "OMe" as used herein means methoxy, and "D" means deuterium. t The term "Ph" as used herein means phenyl, the term "Me" as used herein means methyl, the term "Et" as used herein means ethyl, the term "tert-Bu" or "Bu" as used herein means tert-butyl, the term "OMe" as used herein means methoxy, and "D" means deuterium.

[0499] The term "Biphenyl" as used herein means "phenyl substituted with phenyl". For example, "biphenyl" can be C6-C12aryl substituted with C6-C12aryl. The term "Terphenyl" as used herein means "phenyl substituted with biphenyl". For example, "terphenyl" can be C6-C18aryl substituted with C6-C12aryl substituted with C6-C12aryl. 60 The term "Biphenyl" as used herein means "phenyl substituted with phenyl". For example, "biphenyl" can be C6-C12aryl substituted with C6-C12aryl. The term "Terphenyl" as used herein means "phenyl substituted with biphenyl". For example, "terphenyl" can be C6-C18aryl substituted with C6-C12aryl substituted with C6-C12aryl.

[0500] The term "Biphenyl" as used herein means "phenyl substituted with phenyl". For example, "biphenyl" can be C6-C12aryl substituted with C6-C12aryl. The term "Terphenyl" as used herein means "phenyl substituted with biphenyl". For example, "terphenyl" can be C6-C18aryl substituted with C6-C12aryl substituted with C6-C12aryl. 60 The term "Biphenyl" as used herein means "phenyl substituted with phenyl". For example, "biphenyl" can be C6-C12aryl substituted with C6-C12aryl. The term "Terphenyl" as used herein means "phenyl substituted with biphenyl". For example, "terphenyl" can be C6-C18aryl substituted with C6-C12aryl substituted with C6-C12aryl. 60 The term "Biphenyl" as used herein means "phenyl substituted with phenyl". For example, "biphenyl" can be C6-C12aryl substituted with C6-C12aryl. The term "Terphenyl" as used herein means "phenyl substituted with biphenyl". For example, "terphenyl" can be C6-C18aryl substituted with C6-C12aryl substituted with C6-C12aryl.

[0501] Unless otherwise defined, and as used herein, and *' both mean the binding site to the adjacent atom in the corresponding formula.

[0502] Hereinafter, the organic light emitting device according to the embodiments will be described in more detail with reference to synthesis examples and examples.

[0503] Examples

[0504] Example 1

[0505] A 15 Ωcm 2 ITO / Ag / ITO glass substrates (a product of Corning Inc.) were cut to a size of 50 mm x 50 mm x 0.7 mm, and cleaned using isopropanol and pure water each for 5 minutes by ultrasonication, and then by ultraviolet irradiation for 30 minutes and exposure to ozone. Then, the resulting glass substrates were loaded onto a vacuum deposition apparatus.

[0506] HAT-CN and Cul were co-deposited on the ITO / Ag / ITO anode on the glass substrate in a volume ratio of 97:3 to form a hole injection layer having a thickness of 10 nm, NPB was deposited on the hole injection layer to form a first hole transport layer having a thickness of 240 nm, TCTA was deposited on the first hole transport layer to form a second hole transport layer having a thickness of 5 nm, H18 and FD23 were co-deposited on the second hole transport layer in a volume ratio of 98:2 to form an emission layer having a thickness of 17 nm, a first electron transport layer having a thickness of 5 nm was formed on the emission layer by using T2T, and TPM-TAZ and Liq were co-deposited on the first electron transport layer in a volume ratio of 1:1 to form a second electron transport layer having a thickness of 25 nm, thereby forming a first light emitting unit.

[0507] ET37 and Li were co-deposited on the first light-emitting unit in a volume ratio of 99:1 to form an n-type charge generation layer having a thickness of 10 nm, HAT-CN was deposited to form an intermediate layer having a thickness of 5 nm, and HT3 and Cul were co-deposited on the intermediate layer in a volume ratio of 95:5 to form a p-type charge generation layer having a thickness of 100 nm, thereby forming a first charge generation unit.

[0508] NPB was deposited on the first charge generation unit to form a first hole transport layer having a thickness of 54 nm, TCTA was deposited on the first hole transport layer to form a second hole transport layer having a thickness of 5 nm, H18 and FD23 were co-deposited on the second hole transport layer in a volume ratio of 98:2 to form an emission layer having a thickness of 17 nm, a first electron transport layer having a thickness of 5 nm was formed on the emission layer by using T2T, TPM-TAZ and Liq were co-deposited on the first electron transport layer in a volume ratio of 1:1 to form a second electron transport layer having a thickness of 25 nm, thereby forming a second light-emitting unit.

[0509] ET37 and Li were co-deposited on the second light-emitting unit in a volume ratio of 99:1 to form an n-type charge generation layer having a thickness of 10 nm, HAT-CN was deposited to form an intermediate layer having a thickness of 5 nm, and HT3 and Cul were co-deposited on the intermediate layer in a volume ratio of 95:5 to form a p-type charge generation layer having a thickness of 100 nm, thereby forming a second charge generation unit.

[0510] NPB was deposited on the second charge generation unit to form a first hole transport layer having a thickness of 44.5 nm, TCTA was deposited on the first hole transport layer to form a second hole transport layer having a thickness of 5 nm, H18 and FD23 were co-deposited on the second hole transport layer in a volume ratio of 98:2 to form an emission layer having a thickness of 17 nm, a first electron transport layer having a thickness of 5 nm was formed on the emission layer by using T2T, TPM-TAZ and Liq were co-deposited on the first electron transport layer in a volume ratio of 1:1 to form a second electron transport layer having a thickness of 35 nm, and KI and Yb were co-deposited on the second electron transport layer in a volume ratio of 95:5 to form an electron injection layer having a thickness of 1.1 nm, thereby forming a third light-emitting unit.

[0511] Ag and Mg were co-deposited on the third light-emitting unit in a volume ratio of 9:1 to form a cathode having a thickness of 14 nm, thereby manufacturing a tandem light-emitting device.

[0512] Comparative Example 1

[0513] A light-emitting device was manufactured by using a method substantially the same as that of Example 1 except that HAT-CN was deposited as a p-type charge generation layer and no intermediate layer was formed.

[0514] Comparative Example 2

[0515] A light-emitting device was manufactured by using a method substantially the same as that of Example 1 except that no intermediate layer was formed.

[0516] Evaluation Example

[0517] The driving voltage, change in driving voltage, current efficiency, lifespan, and CIE color coordinates of the light-emitting devices manufactured according to Example 1 and Comparative Examples 1 and 2 were measured by using a Keithley SMU 236 and a luminance photometer PR650, and the results thereof are shown in Table 1. The lifespan (T 97 ) is a period of time taken until the luminance (@ 400 nit) is reduced to 97% of the initial luminance (100%) after driving the light-emitting device. The change in driving voltage is the difference between the initial driving voltage and the driving voltage measured after driving the light-emitting device for 500 hours.

[0518]

Table 1

[0519]

[0520] From the results shown in Table 1, it is confirmed that the light-emitting device of Example 1 can have improved efficiency and lifespan, particularly, can have significantly improved lifespan, compared to the light-emitting devices of Comparative Examples 1 and 2.

[0521] The light-emitting device can have low degradation and high stability even in a high voltage and / or high temperature environment.

[0522] As used herein, the term "use" and variations thereof can be considered synonymous with and be used in place of the term "utilize" and variations thereof.

[0523] In addition, the terms "substantially", "approximately", and similar terms are used as terms of approximation and not as terms of degree unless expressly stated otherwise, and are intended to account for the inherent deviations in measured and calculated values that would be recognized by those skilled in the art.

[0524] Furthermore, any numerical range recited herein is intended to include all sub-ranges of the same whole number recited, as well as an upper limit of 10.0% and a lower limit of 0.8% of the stated range. For example, a range of 1.0 to 10.0 is intended to include all sub-ranges, for example 1.0 to 2.4, 3.4 to 8.0, etc., as well as the same range of 1.0 to 10.0. Any maximum or minimum numerical limitation recited herein is intended to include all lower or higher limits subsumed therein. Accordingly, the applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range included in the ranges expressly recited in this specification.

[0525] It is to be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as being applicable to other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details can be made therein without departing from the spirit and scope of the disclosure as defined by the following claims and their equivalents.

Claims

1. A light-emitting device, the light-emitting device comprising: First electrode; The second electrode faces the first electrode; A number of n light-emitting units are located between the first electrode and the second electrode; as well as There are n-1 charge-generating units located between adjacent light-emitting units. Where n is a natural number of 2 or greater, Each of the light-emitting units includes an emitting layer. At least one of the charge generation units includes an n-type charge generation layer, a p-type charge generation layer, and an intermediate layer located between the n-type charge generation layer and the p-type charge generation layer. The p-type charge generation layer comprises a first material and a second material. The first material includes hole-transporting organic compounds, inorganic insulating compounds, or any combination thereof. The second material includes at least one inorganic semiconductor compound. The intermediate layer is composed of a third material, and The third material is selected from at least one of quinone derivatives, 1,4,5,8,9,12-hexaazabenzophenanthrene-hexanitrile, and compounds represented by formula 221: In Equation 221, R 221 To R 223 All were independently selected from substituted or unsubstituted C3-C. 10 cycloalkyl, substituted or unsubstituted C1-C 10 Heterocyclic alkyl, substituted or unsubstituted C3-C 10 Cycloalkenyl, substituted or unsubstituted C1-C 10 Heterocyclic alkenyl, substituted or unsubstituted C6-C 60 aryl, substituted or unsubstituted C1-C 60 Heteroaryl, substituted or unsubstituted monovalent nonaromatic condensed polycyclic groups, and substituted or unsubstituted monovalent nonaromatic condensed heterocyclic groups. Among them, from R 221 To R 223 At least one selected from cyano, -F, -Cl, -Br, -I, or C1-C substituted with -F is selected. 20 Alkyl groups, C1-C substituted with -Cl 20 Alkyl groups, C1-C substituted with -Br 20 Alkyl groups and substituted C1-C groups with -I 20 At least one substituent selected from alkyl groups.

2. The light-emitting device according to claim 1, wherein, The volume of the first material is equal to or greater than the volume of the second material.

3. The light-emitting device according to claim 1, wherein, The first material comprises the hole-transporting organic compound, and the volume ratio of the first material to the second material is in the range of 99:1 to 80:20, or The first material comprises the inorganic insulating compound, and the volume ratio of the first material to the second material is in the range of 99:1 to 50:

50.

4. The light-emitting device according to claim 1, wherein, The band gap of the third material is 2.5 eV or greater.

5. The light-emitting device according to claim 1, wherein, The lowest unoccupied molecular orbital energy level of the third material is -4.5 eV to -6.5 eV.

6. The light-emitting device according to claim 1, wherein, The n-type charge generation layer comprises a fourth material and a fifth material. The fourth material includes alkali metals, alkaline earth metals, lanthanides, transition metals, post-transition metals, or any combination thereof, and The fifth material includes at least one electron-transporting organic compound.

7. The light-emitting device according to claim 6, wherein, The lowest unoccupied molecular orbital energy level of the fifth material is lower than that of the third material.

8. The light-emitting device according to claim 6, wherein, The difference between the lowest unoccupied molecular orbital energy level of the fifth material and the lowest unoccupied molecular orbital energy level of the third material is 1 eV or less.

9. The light-emitting device according to claim 1, wherein, The first electrode is the anode. The second electrode is a cathode, and The light-emitting device includes: The nth light-emitting unit is located between the first electrode and the second electrode; The (n-1)th light-emitting unit is located between the first electrode and the nth light-emitting unit; and The (n-1)th charge generating unit is located between the nth light-emitting unit and the (n-1)th light-emitting unit. Wherein, the nth light-emitting unit includes the nth emitting layer, and the (n-1)th light-emitting unit includes the (n-1)th emitting layer; The (n-1)th hole transport region is located between the first electrode and the (n-1)th emitter layer; The (n-1)th electron transport region is located between the (n-1)th emission layer and the (n-1)th charge generation unit; The nth hole transport region is located between the (n-1)th charge generation unit and the nth emission layer; and The nth electron transport region is located between the nth emitter layer and the second electrode. Each hole transport region independently includes a hole injection layer, a hole transport layer, an electron blocking layer, a first buffer layer, or any combination thereof, and Each electron transport region independently includes a hole blocking layer, an electron transport layer, an electron injection layer, a second buffer layer, or any combination thereof.

10. The light-emitting device according to claim 9, wherein, The hole injection layer comprises a sixth material and a seventh material. The sixth material and the seventh material are different from each other. The sixth material includes lanthanide halides, transition metal halides, post-transition metal halides, tellurium, lanthanide tellurides, transition metal tellurides, post-transition metal tellurides, lanthanide selenides, transition metal selenides, post-transition metal selenides, or any combination thereof, and The seventh material includes hole-transporting organic compounds, alkali metal halides, alkaline earth metal halides, lanthanide metal halides, or any combination thereof.

11. The light-emitting device according to claim 10, wherein, The seventh material comprises at least one of the hole-transporting organic compounds, and the volume ratio of the sixth material to the seventh material is in the range of 1:99 to 20:80, or The seventh material includes halides of the alkali metal, halides of the alkaline earth metal, halides of the lanthanides, or any combination thereof, and the volume ratio of the sixth material to the seventh material is in the range of 1:99 to 50:

50.

12. The light-emitting device according to claim 9, wherein, The electron injection layer includes an eighth material, and The eighth material includes alkali metal halides, alkaline earth metal halides, lanthanide metal halides, or any combination thereof.

13. The light-emitting device according to claim 12, wherein, The electron injection layer is composed of the eighth material.

14. The light-emitting device according to claim 12, wherein, The electron injection layer also includes a ninth material. The eighth material and the ninth material are different from each other, and The ninth material includes alkali metals, alkaline earth metals, lanthanides, or any combination thereof.

15. The light-emitting device according to claim 14, wherein, The eighth material is represented by formula X, and the ninth material is represented by formula Y: Formula X A n B m Formula Y C, Among them, in equations X and Y, Both A and C independently include alkali metals, alkaline earth metals, lanthanides, or any combination thereof. B is a halogen. n and m are both independent integers of 1 or greater, so that the eighth material is neutral, and A and C are different from each other.

16. The light-emitting device according to claim 9, wherein, The hole transport layer is in direct contact with the emitter layer. The hole transport layer comprises a tenth material and an eleventh material. The tenth material and the eleventh material are different from each other. The tenth material includes at least one hole-transporting organic compound, and The eleventh material includes alkali metal halides, alkaline earth metal halides, lanthanide metal halides, or any combination thereof.

17. The light-emitting device according to claim 9, wherein, The electron transport layer is in direct contact with the emission layer. The electron transport layer comprises a twelfth material and a thirteenth material. The twelfth material and the thirteenth material are different from each other. The twelfth material includes at least one electron-transporting organic compound, and The thirteenth material includes alkali metal halides, alkaline earth metal halides, lanthanide metal halides, or any combination thereof.

18. An apparatus, the apparatus comprising: A thin-film transistor includes a source electrode, a drain electrode, and an active layer; as well as The light-emitting device according to claim 1, The first electrode of the light-emitting device is electrically connected to one of the source electrode and the drain electrode of the thin-film transistor.

19. The apparatus of claim 18, further comprising a color filter. in, The color filter is located along the path of the light output of the light-emitting device.

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