Method of analyzing, imaging and / or processing a region of an object and particle beam device

Abstract

The invention described herein relates to a method for analyzing, imaging and / or processing an object. Moreover, the invention described herein relates to a particle beam device for carrying out the method. The method comprises: arranging a material layer on a region of the object, generating a first image of the material layer using a first particle beam, ablating partial layers of the material layer using a laser beam and / or a second particle beam and by relatively moving the laser beam and / or the second particle beam relative to the partial layers in a movement direction, adjusting the relative movement of the laser beam and / or the second particle beam in such a way that a first thickness of a first partial layer of the material layer is the same as a second thickness of a second partial layer of the material layer, and after the material layer has been partially or completely ablated, generating at least a second image of the region of the object using the first particle beam.

Description

Technical Field

[0001] The invention described herein relates to a method for analyzing, imaging, and / or processing an object. Furthermore, the invention described herein relates to a particle beam device for performing this method. For example, the particle beam device is an electron beam device and / or an ion beam device. Background Technology

[0002] Electron beam devices, especially scanning electron microscopes (hereinafter referred to as SEM) and / or transmission electron microscopes (hereinafter referred to as TEM), are used to examine objects (also known as samples) to gain knowledge about the properties and behavior of the objects under certain conditions.

[0003] In SEM, a beam generator is used to generate an electron beam (hereinafter referred to as a primary electron beam), and a beam guiding system is used to focus the electron beam onto the object to be examined. An objective lens is used for focusing. The primary electron beam is guided onto the surface of the object to be examined by a deflection device. This is also known as scanning. The area scanned by the primary electron beam is also called the scan area. In this area, the electrons of the primary electron beam interact with the object to be examined. Interacting particles and / or interacting radiation are generated as a result of this interaction. For example, the interacting particles are electrons. Specifically, the electrons are emitted by the object—so-called secondary electrons—and the electrons of the primary electron beam are backscattered—so-called backscattered electrons. The interacting particles form a so-called secondary particle beam and are detected by at least one particle detector. The particle detector generates a detection signal for generating an image of the object. Thus, an image of the object to be examined is obtained. For example, the interacting radiation is X-ray radiation or cathodoluminescence. At least one radiation detector is used to detect the interacting radiation. Alternatively, the electrons of the primary electron beam are used to ablate or modify the object.

[0004] In the case of TEM, a beam generator is also used to generate a primary electron beam, and a beam guiding system is used to guide the primary electron beam onto the object to be examined. The primary electron beam passes through the object. As the primary electron beam passes through the object, the electrons of the primary electron beam interact with the material of the object. The electrons that have passed through the object or are emitted by the object are imaged onto a light-emitting screen or a detector, such as a camera, by a system including an objective lens. For example, the aforementioned system may further include a projection lens. Imaging can also be performed in the scanning mode of TEM. This type of TEM is often referred to as STEM. Furthermore, at least one additional detector can be used to detect backscattered particles at the object and / or secondary particles emitted by the object to be examined, in order to image the object. Additionally or alternatively, in TEM or STEM, the electrons of the primary electron beam are used to ablate or modify the object.

[0005] It is known that STEM and SEM functions can be combined in a single particle beam device. Therefore, it is possible to use this particle beam device to examine objects using SEM and / or STEM functions.

[0006] Furthermore, particle beam devices in the form of ion beam columns are known. Ion beam generators arranged within the ion beam column are used to generate ions for treating an object. For example, a gas injection unit is used during treatment to ablate the material of the object or to apply material to the object. Additionally or alternatively, ions are used for imaging by generating interacting particles and / or interacting radiation generated by the interaction between the ions and the object upon impact, wherein the interacting particles are, for example, secondary electrons, and wherein the interacting radiation is, for example, X-ray radiation.

[0007] Furthermore, existing technologies have disclosed practices for analyzing and / or processing objects in particle beam apparatuses using both electrons and ions. For example, electron beam columns with SEM capabilities are arranged in particle beam apparatuses. Additionally, ion beam columns, as explained above, are arranged in particle beam apparatuses. Electron beam columns with SEM capabilities are specifically used for further examination of processed or unprocessed objects, and also for processing objects.

[0008] The electron beam column and the ion beam column can be arranged at a certain angle to each other, for example, greater than 45° and less than 100°. The electron beam column and the ion beam column can be arranged in such a way that the electron beam and the ion beam intersect at a specific point on the object.

[0009] In many fields, particularly in the biosciences, there is a strong desire to generate three-dimensional image data of relevant objects. This allows for various analyses of the objects based on the 3D image data, thus enabling a three-dimensional representation of the objects.

[0010] A method for generating three-dimensional image data of an object is known from the prior art. In this known method, layers of the object are ablated (in other words, removed) by exposing the surface of the object using a second particle beam in the form of an ion beam. A first particle beam in the form of an electron beam is then delivered to the exposed surface. When the first particle beam strikes the surface, interacting particles, particularly secondary electrons and backscattered electrons, appear and are detected. The detection signal generated during detection is used for imaging. Thus, image data about the exposed surface is acquired and stored. By repeatedly and sequentially performing the above method steps and subsequently combining the image data of each exposed surface, three-dimensional image data can be obtained, and thus a three-dimensional representation of the object is obtained.

[0011] In another known method, a first particle beam (i.e., an electron beam) and a second particle beam (i.e., an ion beam) are also used. The second particle beam is guided substantially perpendicular to the marked surface of the object to be inspected. Two longitudinal marks are applied to the marked surface of the object, arranged in a V-shape relative to the longitudinal axis of the object and intersecting at a point on the marked surface. Additionally, the object's layers are ablated by scanning the second particle beam perpendicular to the object's longitudinal axis. As a result, the surface oriented perpendicular to the object's longitudinal axis is exposed. In another step, the first particle beam strikes the exposed surface. The resulting interacting particles are thus detected. The detection signal generated during the detection of the interacting particles is used for imaging, and the acquired image data is stored. The above method steps are repeated to expose other surfaces of the object to be inspected and obtain image data for those other surfaces. In subsequent method steps, the stored image data of the different exposed surfaces are combined to form a three-dimensional image data representation of the object.

[0012] Acquiring three-dimensional image data of an object is also known as tomographic imaging of the object.

[0013] References are made to US 7,312,448 B2 and US2012 / 0112063 A1 as prior art.

[0014] Acquiring 3D image data of large objects, especially large biological structures, is known to take considerable time, such as weeks or even months. Therefore, systems used for acquiring 3D image data must meet high stability requirements and require substantially constant environmental conditions. If the system used for acquiring 3D image data fails to meet these high stability requirements, information about the 3D image data may be lost or unavailable. In particular, images of exposed surfaces may not be obtained. Furthermore, the spatial resolution of the acquired images may vary, which should be avoided.

[0015] As described above, systems for acquiring 3D image data require substantially constant environmental conditions. Environmental conditions that may affect the process of acquiring 3D image data of an object include, for example, ambient temperature, humidity, stray electric fields, and / or stray magnetic fields. Environmental conditions can be monitored, for example, by using temperature sensors, humidity sensors, and / or measuring units for measuring electric and / or magnetic fields. If nominal values ​​change relative to environmental conditions, the acquisition of 3D image data of the object can be paused so that the acquisition of 3D image data is unaffected by these changes. Once the nominal values ​​of the environmental conditions are reached again, the acquisition of 3D image data of the object resumes.

[0016] The acquisition of three-dimensional image data of an object may also be affected by the ion beam generator of the ion beam column, which generates ions for imaging and / or processing the object.

[0017] An ion beam generator known from the prior art includes: an ion source configured to emit ions; a suppression electrode configured to suppress ions emitted from a side surface of the ion source; an extraction electrode configured to extract ions from the ion source; a first variable voltage supply unit for biasing the extraction electrode using an extraction voltage; and a second variable voltage supply unit for biasing the suppression electrode using a suppression voltage. The ion beam generator provides an emission current containing ions.

[0018] When using a known ion beam generator, the emission current can follow a specific behavior that depends on time due to the inherent physical characteristics of the ion beam generator. Figure 1 An example of this specific behavior of the emission current EC is shown. In other words, Figure 1 The emission physiology of a known ion beam generator is illustrated. After an initial time T0, the emission current EC decreases. When the emission current EC reaches time T... MIN When it reaches its minimum value, the emission current EC is at T MIN It increases over the subsequent time period until it reaches time T. MAX It reaches its maximum value at time T. MAX After that, the emission current EC decreased again.

[0019] When using an ion beam generator, it is always desirable to obtain a nearly constant and specific emission current. Typical specific emission currents for ion beam generators range from 1.3 μA to 2.2 μA. For example, a specific emission current for an ion beam generator is 2 μA (see...). Figure 1 It is known that adjusting the suppression voltage applied to the suppression electrode can achieve or maintain a specific emission current of the ion beam generator (see [reference]). Figure 1 and Figure 2 For example, if the emission current EC increases, the suppression voltage applied to the suppression electrode also increases. However, when the emission current EC decreases, the suppression voltage applied to the suppression electrode also decreases. By increasing or decreasing the suppression voltage applied to the suppression electrode, the emission current EC of the ion beam generator is adjusted to a specific emission current, such as 2 μA.

[0020] If the emission current decreases and drops below a certain threshold, the suppression voltage applied to the suppression electrode will also decrease and may reach a lower threshold, such as 0V, and therefore no longer affect the emission current (see [link to relevant documentation]). Figure 2If the suppression voltage applied to the suppression electrode no longer affects the emission current, this can lead to ion source depletion, which is undesirable. In other words, the specific emission current decreases until it disappears. If the specific emission current is not reached or maintained, it is known to adjust the extraction voltage applied to the extraction electrode to a new value that allows the specific emission current to be reached or maintained. At this new value of the extraction voltage, the suppression electrode may affect the emission current and keep the specific emission current stable. However, the new value of the extraction voltage may differ from the previous value by several hundred volts. This may require realigning the particle beam impacting the object, thus requiring readjustment of the particle beam current and particle beam shape on the object. In other words, the path of the ions in the ion beam column changes due to the change in extraction voltage and may no longer be focused on the object. Therefore, the characteristics of all other beam guiding units, especially the voltages applied to these beam guiding units, must also be changed to realign the ion beam and ensure that the ions travel properly along the path through the ion beam column, which is suitable for focusing ions onto the object. The effort required to realign the ion beam impacting the object, and therefore readjust the ion beam current and shape on the object, can be high and time-consuming.

[0021] If the emission current increases above a certain threshold, the suppression voltage applied to the suppression electrode will also increase and may reach a high threshold, such as 2kV, thus making it impossible to maintain emission. Consequently, the mass of the particle beam decreases. Moreover, due to the physical characteristics of the ion source, a specific emission current can no longer be achieved or maintained using a specific value of the extraction voltage.

[0022] Other methods and apparatus for adjusting and / or controlling the emission current of an ion beam generator are also known in the prior art. For example, the emission current can be stabilized by varying the filament current or by mechanical arrangement.

[0023] Since adjusting and / or controlling the emission current of the ion beam in terms of the stability of the emission current affects the acquisition of three-dimensional image data of the object, the acquisition of three-dimensional image data of the object is paused when adjusting and / or controlling the emission current of the ion beam.

[0024] After the emission current of the ion beam has been adjusted and / or controlled, three-dimensional image data of the object can be acquired. Before acquiring the three-dimensional image data of the object, and as described above, the ion beam must typically be realigned so that it is accurately positioned on the area of ​​the object to be processed and / or imaged. If the ion beam is not accurately positioned, it will particularly affect the ablation of the material on the object's surface and / or the thickness of the layer ablated by the ion beam will vary. Realignment can be a time-consuming process, as described above, because it can be affected by a variety of factors, such as object drift, object charging, interaction between the object and the ion beam, and movement of the ion beam within the ion beam column.

[0025] The two longitudinal markers described above are arranged on an object in a V-shape. An ion beam is used to ablate layers of the object, which are arranged along the direction of ion beam movement. The direction of movement is given by a vector perpendicular to or substantially perpendicular to the surface of each ablated layer. The two longitudinal markers are used to monitor the advance of the ion beam along the direction of movement. The advance of the ion beam along the direction of movement is also known as the ion beam propagation velocity.

[0026] It is known that adjusting the advance of the ion beam in the direction of movement can achieve a uniform thickness of the layer ablated using the ion beam. In other words, adjusting the advance of the ion beam in the direction of movement can achieve a uniform thickness of the layer removed using the ion beam.

[0027] The acquisition of three-dimensional image data of an object can be divided into two stages: the first stage (the so-called transition stage) and the second stage (the so-called stable stage).

[0028] The transition phase can include a stabilization period, during which the acquisition of 3D image data of the object is unstable. Images of the object's surface cannot be obtained. Furthermore, the thickness of the layer ablated using the ion beam varies excessively, for example, twice the nominal size. Additionally, the transition phase can include a variation period, which can begin after the stabilization period has ended. During the variation period, the acquisition of 3D image data of the object is performed. However, the thickness of the layer ablated using the ion beam still varies significantly.

[0029] After the transition phase ends, the stabilization phase begins, during which the acquisition of 3D image data of the object can be performed very stably. During the stabilization phase, the thickness variation of the layer ablated using the ion beam is quite small. In other words, the thickness of the layer ablated using the ion beam is uniform or substantially uniform, where substantially uniform is defined as a variation ranging from 1 nm to 10 nm.

[0030] After the acquisition of 3D image data of an object has been paused and subsequently restarted, a transition phase may occur before a stable phase is reached. As mentioned above, some surfaces of the object's layers cannot be imaged during the transition phase, while other surfaces of the object's layers can be imaged during the transition phase. However, these layers have different thicknesses due to the aforementioned higher variations.

[0031] Figure 3 The above content is presented in a simplified manner. Specifically, Figure 3 The diagram shows the variation of the cycle of the aforementioned known ion beam generator over time, as well as the variation of the thickness of those layers in an object ablated using an ion beam over time.

[0032] Figure 3 Three emission cycles are illustrated: emission cycle I, emission cycle II, and emission cycle III. Emission cycle I begins when the user initiates the process of acquiring 3D image data of an object, and after the emission current of the ion beam has been controlled and / or adjusted for the first time. Emission cycle II begins after the emission current of the ion beam has been controlled and / or adjusted for the second time, and emission cycle III begins after the emission current of the ion beam has been controlled and / or adjusted for the third time.

[0033] The first transition phase 1 occurs at the beginning of the first emission cycle I. The first transition phase 1 includes a first stabilization period SP1, during which the acquisition of 3D image data of the object is unstable. Images of the object surface cannot be obtained. Furthermore, the thickness variations of the layers of the object ablated using the ion beam are too large. Additionally, the first transition phase 1 includes a first variation period VP1, which begins after the first stabilization period SP1 has ended. During the first variation period VP1, the acquisition of 3D image data of the object is performed. However, the thickness variations of the layers of the object ablated using the ion beam are still significant. After the first transition phase 1 has ended, the first stabilization phase 1 begins, during which the acquisition of 3D image data of the object can be performed very stably. In the first stabilization phase 1, the thickness variations of the layers of the object ablated using the ion beam are relatively small. In other words, the thickness of the ablated layers is uniform or substantially uniform, where substantially uniform is defined as a variation range of 1 nm to 10 nm.

[0034] The second transition phase 2 occurs at the beginning of the second emission cycle II. The second transition phase 2 includes a second stabilization period SP2, during which the acquisition of 3D image data of the object is unstable. Images of the object surface cannot be obtained. Furthermore, the thickness variations of the layers of the object ablated using the ion beam are too large. Additionally, the second transition phase 2 includes a second variation period VP2, which begins after the end of the second stabilization period SP2. During the second variation period VP2, the acquisition of 3D image data of the object is performed. However, the thickness variations of the layers of the object ablated using the ion beam are still significant. After the end of the second transition phase 2, the second stabilization phase 2 begins, during which the acquisition of 3D image data of the object can be performed very stably. In the second stabilization phase 2, the thickness variations of the ablated layers are relatively small. In other words, the thickness of the ablated layers is uniform or substantially uniform, where substantially uniform is defined as a variation range of 1 nm to 10 nm.

[0035] like Figure 3 As shown, the second emission cycle II is shorter than the first emission cycle I and the third emission cycle III. Due to the stability of the ion emission current, the acquisition of three-dimensional image data of the object is suspended during the second stabilization phase 2, until the start of the third emission cycle III, by controlling and / or adjusting the emission current of the ion beam.

[0036] The third transition phase 3 occurs at the beginning of the third emission cycle III. The third transition phase 3 includes a third stable period SP3, during which the acquisition of 3D image data of the object is unstable. Images of the object surface cannot be obtained. Furthermore, the thickness variations of the layers of the object ablated using the ion beam are too large. Additionally, the third transition phase 3 includes a third variation period VP3, which begins after the end of the third stable period SP3. During the third variation period VP3, the acquisition of 3D image data of the object is performed. However, the thickness variations of the layers of the object ablated using the ion beam are still significant. After the end of the third transition phase 3, the third stable phase 3 begins, during which the acquisition of 3D image data of the object can be performed very stably. In the third stable phase 3, the thickness variations of the ablated layers are relatively small. In other words, the thickness of the ablated layers is uniform or substantially uniform, where substantially uniform is defined as a variation range of 1 nm to 10 nm.

[0037] Therefore, the object of the present invention is to specify a method for analyzing, imaging and / or processing a region of an object using a particle beam apparatus, and a particle beam apparatus for performing the method, the method and the particle beam apparatus providing for very stable acquisition of three-dimensional image data of an object during a transition period, wherein the variation in the thickness of the ablation layer of the object is relatively small. Summary of the Invention

[0038] According to the invention, this object is achieved by the method described below. A computer program product includes program code that is loaded into a processor and, when executed, controls a particle beam device, as given below. A particle beam device for performing the method is given below. Further features of the invention will become clear from the following description and / or drawings.

[0039] A method for analyzing, imaging, and / or processing a region of an object using a particle beam device includes:

[0040] - Arrange at least one layer of material over the area of ​​the object;

[0041] - Using a first particle beam to generate at least one first image of the material layer, wherein a first beam generator is used to generate the first particle beam, wherein the first particle beam includes first charged particles, wherein the first particle beam is focused onto the material layer using a first objective lens, wherein first interacting particles and / or first interacting radiation are generated when the first particle beam strikes the material layer, and wherein a detector is used to detect the first interacting particles and / or the first interacting radiation;

[0042] - A portion of the material layer is ablated using a laser beam and / or a second particle beam and by moving the laser beam and / or the second particle beam relative to these portion layers in a moving direction, wherein a laser device is used to generate the laser beam, and wherein a second beam generator is used to generate the second particle beam, wherein the second particle beam includes second charged particles, wherein a second objective lens is used to focus the second particle beam onto these portion layers, wherein these portion layers are arranged along the moving direction;

[0043] - During the ablation of these partial layers of the material layer, the relative movement of the laser beam and / or the second particle beam is adjusted such that the first thickness of the first partial layer of the material layer is the same as or substantially the same as the second thickness of the second partial layer of the material layer; and

[0044] - After the material layer has been partially or completely ablated, the first particle beam is used to generate at least a second image of a region of the object, wherein the first particle beam is focused on the region of the object using the first objective lens, wherein second interacting particles and / or second interacting radiation are generated when the first particle beam strikes the region of the object, and wherein the second interacting particles and / or the second interacting radiation are detected using a detector.

[0045] A particle beam apparatus for analyzing, imaging, and / or processing a region of an object includes:

[0046] - At least one first beam generator for generating a first particle beam comprising a first charged particle.

[0047] - At least one first objective lens for focusing the first particle beam onto the object and / or onto a layer of material disposed on the object.

[0048] - At least one ablation device for ablating material from the object;

[0049] - A detector for detecting interacting particles and / or interacting radiation, which generate such interacting particles and / or interacting radiation when the first particle beam strikes the object and / or the material layer disposed on the object.

[0050] - The processor, according to the computer program product mentioned above, is loaded into the processor.

[0051] The method according to the invention is used to analyze, image, and / or process a region of an object using a particle beam apparatus. The aforementioned particle beam apparatus includes a first beam generator for generating a first particle beam comprising a first charged particle. The first charged particle may be an electron and / or an ion. Furthermore, the particle beam apparatus includes a first objective lens for focusing the first particle beam onto the object. The aforementioned particle beam apparatus may further include a second beam generator for generating a second particle beam comprising a second charged particle. The second charged particle may be an electron and / or an ion. Furthermore, the particle beam apparatus includes a second objective lens for focusing the second particle beam onto the object. Additionally or alternatively, the aforementioned particle beam apparatus may include a laser device for generating a laser beam.

[0052] The method according to the invention includes arranging at least one material layer on a region of an object. Examples of how to arrange the material layer on a region of an object and examples of the material layer itself are further given below.

[0053] The method according to the invention further includes using a first particle beam to generate at least one first image of the material layer. The first image is generated after the material layer is arranged on a region of the object. First interacting particles and / or first interacting radiation are generated when the first particle beam is focused onto the material layer using a first objective lens and when the first particle beam strikes the material layer. These first interacting particles and / or first interacting radiation are detected using a detector of a particle beam device. The first interacting particles may include particles emitted by the material layer (so-called secondary particles, particularly secondary electrons) and particles of the first particle beam backscattered from the material layer (so-called backscattered particles, particularly backscattered electrons). For example, the first interacting radiation may be X-ray radiation or cathodoluminescence.

[0054] When and / or after generating a first image of the material layer, the method according to the invention includes ablating a portion of the material layer using a second particle beam by moving the second particle beam relative to the portion of the layer in a movement direction. Alternatively, the invention includes ablating a portion of the material layer using a laser beam by moving the laser beam relative to the portion of the layer in a movement direction. The portion of the layer is arranged along the movement direction. For example, the second particle beam is focused on and ablates the corresponding portion of the layer. At least one gas may interact with the second particle beam to ablate the corresponding portion of the layer. This gas may be provided by a gas injection unit. Alternatively, a laser beam is focused on and ablates the corresponding portion of the layer.

[0055] The second particle beam and / or laser beam can be moved along the direction of movement and / or the object can be moved relative to the direction of movement, so as to move the second particle beam and / or laser beam relative to a portion of the layer in the direction of movement. Relative movement relative to the second particle beam can be provided, for example, by using a second objective lens and / or at least one additional guiding unit for the second particle beam in the particle beam apparatus. Alternatively or additionally, relative movement can be provided, for example, by using a movable stage on which the object is disposed. For example, the stage can be moved in the x, y, and z directions, for example, which can be arranged perpendicular to each other. Furthermore, the stage can rotate about a first stage rotation axis and a second stage rotation axis, the second stage rotation axis being arranged, for example, perpendicular to the first stage rotation axis. The laser beam can be moved using a laser beam guiding unit that may include at least one reflector.

[0056] These partial layers can be arranged vertically to each other along the direction of movement. Specifically, the first surface of the first partial layer is arranged parallel to or substantially parallel to the second surface of the second partial layer, wherein the substantially parallel arrangement of these partial layers includes a deviation of less than 1° relative to the parallel arrangement of these partial layers. When disposed on a region of the object, the thickness of each partial layer is considerably low compared to the thickness of the material layer. After being disposed on a region of the object, the material layer can have a thickness, for example, between 10 nm and 1000 nm or between 10 nm and 250 nm, wherein the boundaries are included within the aforementioned range, and each ablated partial layer can have a thickness of less than 10 nm, particularly less than 3 nm, less than 2 nm, less than 1 nm, or less than 0.5 nm. However, the invention is not limited to the aforementioned ranges of thickness for the material layer or each partial layer. Rather, any thickness of the material layer or each partial layer suitable for performing the method according to the invention can be selected.

[0057] The method according to the invention further includes adjusting the relative movement of the second particle beam and / or laser beam when ablating a portion of the material layer, such that the first thickness of the first portion of the material layer is the same as or substantially the same as the second thickness of the second portion of the material layer, wherein the deviation regarding the substantially identical thickness is less than 5 nm, particularly less than 3 nm or less than 0.6 nm. This relative movement is adjusted, for example, by using a second objective lens and / or at least one additional guiding unit for the second particle beam or for the laser beam of the particle beam apparatus. Alternatively or additionally, this relative movement can be provided, for example, by using a movable stage on which an object is disposed.

[0058] Furthermore, the method according to the invention includes generating at least one second image of a region of the object using a first particle beam after the material layer has been completely or partially ablated, wherein the first particle beam is focused onto the region of the object using a first objective lens. When the first particle beam strikes the region of the object, second interacting particles and / or second interacting radiation are generated. The second interacting particles and / or second interacting radiation are detected using a detector. These interacting particles may include particles emitted by the region of the object (so-called secondary particles, particularly secondary electrons) and particles of the first particle beam backscattered from the region of the object (so-called backscattered particles, particularly backscattered electrons). For example, the interacting radiation may be X-ray radiation or cathodoluminescence.

[0059] Furthermore, the method according to the invention may further include: acquiring a three-dimensional image of the object, starting from a region of the object, for example, in the direction of movement of the second particle beam and / or laser beam. An image of a first surface of the region of the object is generated using a first particle beam. When the first particle beam strikes the first surface, interacting particles and / or interacting radiation are generated, which can be detected using a detector. The interacting particles may be secondary electrons and / or backscattered electrons. The interacting radiation may be X-ray radiation or cathodoluminescence. A detection signal generated by the detector during detection is used to image the first surface. Thus, image data about the first surface is acquired and stored. Additionally, for example, a first layer of the object in the region of the object is ablated using the second particle beam and / or laser beam as described above. Ablation of the first layer may occur during or after generating the image of the first surface of the region of the object. A second surface of the object is exposed. The first particle beam is then directed to the exposed second surface. When the first particle beam strikes the second surface, interacting particles and / or interacting radiation are generated, which can be detected using a detector. The interacting particles may be secondary electrons and / or backscattered electrons. The interacting radiation may be X-ray radiation or cathodoluminescence. A detection signal generated by the detector during detection is used to image the second surface. Therefore, image data about the exposed second surface is acquired and stored. For example, another layer, namely the second layer of the object, is ablated using a second particle beam as described above. Ablation of the second layer can occur during or after the generation of an image of the second surface of the first layer. The third surface of the object is then exposed. A first particle beam is subsequently directed to the exposed third surface. When the first particle beam strikes the third surface, interacting particles and / or interacting radiation are generated, which can be detected using a detector. A third detection signal generated by the detector during detection is used to image the third surface. Thus, image data about the exposed third surface is acquired and stored.

[0060] By repeatedly and sequentially performing the steps described above for acquiring three-dimensional image data of an object, and in particular by subsequently combining the image data of each exposed surface, three-dimensional image data can be obtained, and thus a three-dimensional representation of the object can be obtained.

[0061] The method according to the invention offers the following advantages over the prior art. A transition phase occurs at the beginning of the cycle generating the first particle beam and / or the second particle beam. The transition phase includes a stabilization period, during which the first particle beam and / or the second particle beam interact only with the material layers. During the stabilization period, no image of the object's surface is obtained for acquiring three-dimensional image data of the object. Furthermore, the transition phase includes a change period, which begins after the stabilization period has ended. During the change period, the relative movement of the second particle beam and / or laser beam is adjusted such that the first thickness of the first portion of the material layer is the same as or substantially the same as the second thickness of the second portion of the material layer. After this adjustment, layers with the same or substantially the same thickness can be ablated using the second particle beam and / or laser beam. Once the material layers are partially or completely ablated, the acquisition of three-dimensional image data begins. The method according to the invention provides the possibility of imaging the surfaces of all exposed layers of an object and provides uniform thickness of all ablated layers of the object, which form the basis of the object's three-dimensional representation. Since all surfaces of all ablated layers of the object contribute to the object's three-dimensional representation, no information about the exposed surfaces of the layers is lost. The material layer is used to adjust the second particle beam and / or laser beam until the object's layers are ablated and the surface is imaged in a stable phase.

[0062] The material layer disposed on the area of ​​the object and the object itself may differ in composition. In other words, the material layer may include at least one first material, and the object may include at least one second material, wherein the first and second materials are different. This may result in the surface generated by ablating the layer using a second particle beam and / or laser beam not being arranged parallel to the surface of the object on which the material layer has been disposed. In fact, the surface generated by ablating the layer may be arranged at an angle of several degrees (e.g., in the range of 2° to 5°) to the surface on which the material layer has been disposed. This may require adjusting the angle between the object and the incident direction of the second particle beam and / or laser beam on the object. The angle can be adjusted, for example, by rotating a movable stage on which the object is disposed, by changing the incident direction of the second particle beam and / or laser beam on the object, by changing the tilt of the laser device or second particle generator object, and / or by changing the shape of the second particle beam and / or laser beam. The invention is not limited to the foregoing examples of angle adjustment. Rather, any method of angle adjustment suitable for use in the invention may be used.

[0063] In embodiments of the method according to the invention, the method is further or alternatively provided to include providing at least one first gas to a region of the object using a first gas injection unit and using electron beam induced deposition and / or ion beam induced deposition to arrange a material layer on the region of the object. For example, at least one of the following materials is used to provide the material layer: platinum, carbon, tungsten, copper, an insulator, and / or water. This material may be provided as a gaseous preliminary substance referred to as a precursor and guided to the region of the object using the first gas injection unit.

[0064] In another embodiment of the method according to the invention, the method is further provided, or alternatively, to include the step of setting at least one first mark on the object, wherein the first mark is used to adjust the relative movement of the second particle beam and / or laser beam in such a way that a first thickness of a first portion of the material layer is the same as or substantially the same as a second thickness of a second portion of the material layer. For example, the method may further include providing at least one second gas to the object using a second gas injection unit and using electron beam induced deposition and / or ion beam induced deposition to arrange the first mark on the object. In one embodiment, the first gas unit and the second gas unit are the same. In particular, the second gas is also provided by the first gas unit, for example, by using the same gas needle to provide both the first and second gases, or by using a first gas needle of the first gas unit to provide the first gas and a second gas needle of the first gas unit to provide the second gas. Alternatively, the first gas unit and the second gas unit may be different units. In another embodiment, the first mark is etched on the object using a first particle beam and / or a second particle beam. Moreover, the first mark is, for example, arranged on a mark surface arranged perpendicular to the surface of the area of ​​the object. Furthermore, at least one of the following materials can be used to set the first mark: platinum, carbon, tungsten, copper, insulators, and / or water. Water can enhance the etching of an object to set the first mark. Similarly, the material can be provided as a gaseous preliminary substance called a precursor and directed to the object using a second gas injection unit. For example, the first mark may include two longitudinal marks that can be applied to the marked surface of the object. These two longitudinal marks may be arranged in a V-shape relative to the direction of movement of the second particle beam and may intersect at a point on the object.

[0065] In another embodiment of the method according to the invention, the step of arranging a material layer is additionally or alternatively provided, including providing a material layer having a first material, wherein the region of the object includes a second material, and wherein the first material is different from the second material. In other words, the first material of the material layer and the second material of the region of the object are different materials. In this embodiment, it is easy to determine whether the material layer has been completely ablated, allowing the acquisition of three-dimensional image data of the object to begin.

[0066] In another embodiment of the method according to the invention, the step of arranging a material layer on a region of an object is further or alternatively provided, including providing a first portion of the material layer, wherein the first portion of the material layer comprises a first portion of material, and providing a second portion of the material layer, wherein the second portion of the material layer comprises a second portion of material, wherein the first portion of material is different from the second portion of material. In another embodiment of the method according to the invention, the first portion of the material layer is further or alternatively provided using a precursor and a first particle beam, and the second portion of the material layer is provided using the same precursor and a second particle beam.

[0067] In embodiments of the method according to the invention, the method is further provided, or alternatively, to include providing at least one second mark on the material layer, wherein the second mark is used to identify when the step of ablation of a portion of the material layer is to begin. In other words, the second mark can be used to identify when the second particle beam and / or laser beam is focused on the material layer. The second mark can be the shape of a dot on the material layer, or it can be a hole on the material layer. Moreover, the second mark can be used to identify whether the material layer has been completely ablated or to identify the remaining thickness of the material layer after ablation of some portions of the material layer. Additionally, or alternatively, the first mark can be used to identify whether the material layer has been completely ablated or to identify the remaining thickness of the material layer after ablation of some portions of the material layer.

[0068] For example, the method may further include using a third gas injection unit and providing at least one third gas to the material layer using electron beam induced deposition and / or ion beam induced deposition to arrange the second mark on the material layer. In one embodiment, the first gas unit is the same as the third gas unit. In particular, the third gas is also provided by the first gas unit, for example, by using the same gas needle to provide the first gas and the third gas, or by using the first gas needle of the first gas unit to provide the first gas and using the third gas needle of the first gas unit to provide the third gas. Additionally or alternatively, the second gas unit is the same as the third gas unit. In particular, the third gas is also provided by the second gas unit, for example, by using the same gas needle to provide the second gas and the third gas, or by using the second gas needle of the second gas unit to provide the second gas and using the third gas needle of the second gas unit to provide the third gas. Alternatively, the first gas unit, the second gas unit, and the third gas unit may each be different units. In another embodiment, a first particle beam and / or a second particle beam are used to etch the second mark on the material layer. For example, at least one of the following materials is used to set the second mark: platinum, carbon, tungsten, copper, an insulator, and / or water. Similarly, the material can be provided as a gaseous preliminary substance known as a precursor and guided into the material layer using a third gas injection unit.

[0069] As described above, in another embodiment of the method according to the invention, the first gas injection unit is additionally or alternatively the same as the second gas injection unit. Additionally, the first gas unit is additionally or alternatively the same as the third gas injection unit. In another embodiment, the second gas injection unit is additionally or alternatively the same as the third gas. Furthermore, in another embodiment of the method according to the invention, the first gas is additionally or alternatively the same as the second gas. Moreover, additionally or alternatively, the first gas may be the same as the third gas. Additionally, additionally or alternatively, the second gas may be the same as the third gas.

[0070] In one embodiment of the method according to the invention, the thickness of the material layer is further or alternatively identified and used to select the initial advance of the second particle beam and / or laser beam along the direction of movement of the second particle beam, and thus the advance speed of the second particle beam (or the advance speed of the laser beam if a laser beam is used). This initial advance of the second particle beam and / or laser beam along the direction of movement of the second particle beam and / or laser beam corresponds almost exactly to the advance of the second particle beam and / or laser beam along the direction of movement of the second particle beam and / or laser beam required to achieve the same or substantially the same thickness of the ablated partial layer and / or the layers of the object when acquiring three-dimensional image data of the object.

[0071] In embodiments of the method according to the invention, the method is further or alternatively configured to use an electron beam generator as a first particle beam generator to generate an electron beam containing electrons, and / or to use an ion beam generator as a second particle beam to generate an ion beam containing ions.

[0072] The present invention also relates to a computer program product comprising program code that can be loaded or incorporated into a processor and, when executed, controls a particle beam device in such a way as to perform a method comprising at least one step or a combination of at least two steps described above or below.

[0073] The present invention also relates to a particle beam apparatus for analyzing, imaging, and / or processing regions of an object. The particle beam apparatus according to the invention includes at least one first beam generator for generating a first particle beam containing first charged particles. These first charged particles may be, for example, electrons or ions. Furthermore, the particle beam apparatus according to the invention also has at least one first objective lens for focusing the first particle beam onto the object and / or onto a material layer disposed on the object. Additionally, the particle beam apparatus according to the invention includes at least one ablation device for ablating material from the object. For example, the ablation device may be at least one second beam generator for generating a second particle beam containing second charged particles. Furthermore, the particle beam apparatus according to the invention may have at least one second objective lens for focusing the second particle beam onto the object and / or onto a material layer disposed on the object. These second charged particles may be, for example, electrons or ions. Furthermore or alternatively, the particle beam apparatus includes a laser device as an ablation device, wherein the laser device is configured to generate a laser beam.

[0074] Furthermore, the particle beam device according to the invention has at least one detector for detecting interacting particles and / or interacting radiation generated when a first particle beam and / or a second particle beam strikes an object and / or a layer of material disposed on the object. These interacting particles can be secondary particles and / or backscattered particles, particularly secondary electrons and backscattered electrons. The interacting radiation can be X-ray radiation and / or cathodoluminescence. Additionally, the particle beam device according to the invention includes at least one processor into which the computer program product described above is loaded.

[0075] Embodiments of the particle beam apparatus according to the present invention further or alternatively include at least one of the following: (i) a first gas injection unit for providing a first gas, (ii) a second gas injection unit for providing a second gas, and (iii) a third gas injection unit for providing a third gas. In embodiments of the particle beam apparatus according to the present invention, the first gas injection unit is the same as the second gas injection unit. Furthermore or alternatively, the first gas unit is the same as the third gas injection unit. In another embodiment, the second gas injection unit is the same as the third gas injection unit. Additionally, in another embodiment of the particle beam apparatus according to the present invention, the first gas is the same as the second gas. Moreover, further or alternatively, the first gas may be the same as the third gas. Additionally, further or alternatively, the second gas may be the same as the third gas.

[0076] Another embodiment of the particle beam apparatus according to the invention further or alternatively includes a first particle beam generator that is an electron beam generator for generating an electron beam containing electrons. Furthermore or alternatively, the second particle beam generator may be an ion beam generator for generating an ion beam containing ions. Attached Figure Description

[0077] The embodiments of the invention described herein are explained in more detail below with reference to the accompanying drawings, in which:

[0078] Figure 1 A schematic representation of the emission current of a particle beam generator changing over time is shown (prior art);

[0079] Figure 2 A schematic representation (prior art) shows how a specific emission current of a particle beam generator varies over time and with respect to the suppression electrode;

[0080] Figure 3 A schematic representation is shown of the cycle of an ion beam generator changing over time and the thickness of layers of an object changing over time, which are ablated using an ion beam (prior art).

[0081] Figure 4 An exemplary embodiment of the particle beam device is shown;

[0082] Figure 5 It shows Figure 4 The electron beam device of the particle beam device;

[0083] Figure 5A An exemplary embodiment of another particle beam device is shown;

[0084] Figure 6 A schematic representation of an exemplary embodiment of a movable stage for arranging objects in a particle beam apparatus is shown.

[0085] Figure 7 It shows according to Figure 6 Another schematic representation of the platform;

[0086] Figure 8 It shows how to use Figure 4 or Figure 5A Exemplary embodiments of a method for analyzing, imaging, and / or processing objects using a particle beam device;

[0087] Figure 9 It shows Figure 8 The other steps of the method;

[0088] Figure 10 It shows Figure 8 Another step in the method;

[0089] Figure 11 A schematic representation of an object including material layers is shown;

[0090] Figure 12 Another schematic representation of an object including material layers is shown; and

[0091] Figure 13 A schematic representation is shown of the cycle of an ion beam generator according to the invention changing over time and the thickness of layers of an object changing over time, these layers being ablated using an ion beam. Detailed Implementation

[0092] The invention will now be described in more detail using a particle beam apparatus 200 in the form of a combined device as an example. The combined device 200 may include a first particle beam column in the form of an electron beam apparatus 100 and a second particle beam column in the form of an ion beam apparatus 300. The electron beam apparatus 100 is a SEM. It is explicitly stated that the first particle beam column may also be an ion beam column.

[0093] Figure 4 A particle beam apparatus 200 is shown. An electron beam apparatus 100 is arranged in a material chamber 201. The material chamber 201 is under vacuum. To generate the vacuum, a vacuum system (not shown) including a pump is arranged in the material chamber 201. Figure 4 In the exemplary embodiment shown, the object chamber 201 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10. -3 The pressure is hPa, and the second pressure range only includes pressures greater than 10. -3 The pressure is hPa. To ensure the pressure range, the object chamber 201 is vacuum-sealed.

[0094] Figure 5 A schematic diagram of an electron beam apparatus 100 is shown. The electron beam apparatus 100 includes a first beam generator in the form of an electron source 101, which is implemented as a cathode. Further, the electron beam apparatus 100 is provided with an extraction electrode 102 and an anode 103, the anode being disposed at one end of a beam guide tube 104 of the electron beam apparatus 100. For example, the electron source 101 is implemented as a thermal field emitter. However, the invention is not limited to this electron source 101. Rather, any electron source can be used.

[0095] Electrons emitted from electron source 101 form a first particle beam in the form of an electron beam. These electrons are accelerated to the anode potential due to the potential difference between electron source 101 and anode 103. In the exemplary embodiment shown here, the anode potential is 1 kV to 20 kV, for example 5 kV to 15 kV, particularly 8 kV, relative to the ground potential of the housing 201. However, alternatively, the anode potential may be at ground potential.

[0096] Two focusing lenses are arranged at the beam guide tube 104, namely the first focusing lens 105 and the second focusing lens 106. Figure 5 In the electron beam apparatus 100, viewed from the electron source 101 towards the first objective lens 107, a first condenser lens 105 is first arranged, followed by a second condenser lens 106. It is explicitly stated that another exemplary embodiment of the electron beam apparatus 100 may have only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. Together with the anode 103 and the beam guide tube 104, the first aperture unit 108 is at a high voltage potential (i.e., the potential of the anode 103), or it is grounded. The first aperture unit 108 has a plurality of first apertures 108A, in... Figure 5 One of these is shown in the diagram. For example, there may be two first apertures 108A. Each of these many first apertures 108A has a different aperture diameter. The desired first aperture 108A can be positioned on the first optical axis OA1 of the electron beam device 100 by means of an adjustment mechanism. For example, the first aperture unit 108 can be moved in the x-direction (i.e., the axis of the first aperture unit), the y-direction (i.e., the axis of the second aperture unit), and the z-direction (i.e., the axis of the third aperture unit) by means of an adjustment mechanism, these directions being perpendicular to each other. The adjustment mechanism can be a drive unit, particularly a motor, such as a stepper motor or a piezoelectric motor. It is explicitly stated that the drive unit is not limited to the foregoing embodiments. Rather, the drive unit can be any drive unit suitable for the present invention.

[0097] It is explicitly stated that in another exemplary embodiment, the first aperture unit 108 may be provided with only a single aperture 108A. In these exemplary embodiments, the adjustment mechanism may be omitted. The first aperture unit 108 is then designed to be fixed.

[0098] A fixed second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, the second aperture unit 109 can be configured to be movable.

[0099] The first objective lens 107 has electrodes 110 with holes formed in them. A beam guide tube 104 is guided through these holes. A coil 111 is arranged in the electrodes 110.

[0100] An electrostatic delay device is arranged in the lower region of the beam guide tube 104. It has a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged at one end of the beam guide tube 104, which faces the object 114 arranged on the stage 122 (see figure). Figure 4The tubular electrode 113, together with the beam guide tube 104, is at the potential of the anode 103, while the single electrode 112 and the object 114 are at a lower potential relative to the anode 103. In the present case, this is the ground potential of the shell of the object chamber 201. Therefore, the electrons of the electron beam may be slowed down to the desired energy required to examine the object 114.

[0101] The electron beam apparatus 100 further includes a scanning device 115 by which the electron beam can be deflected and scanned on the object 114. In doing so, the electrons of the electron beam interact with the object 114. Due to this interaction, interacting particles are generated and detected. Specifically, the interacting particles are electrons emitted from the surface of the object 114—so-called secondary electrons—or electrons from the electron beam that are backscattered—so-called backscattered electrons.

[0102] The object 114 and the single electrode 112 can also be at different potentials and different from the ground. Therefore, the delay position of the electron beam can be set relative to the object 114. For example, if the delay occurs very close to the object 114, the imaging aberrations become smaller.

[0103] A detector assembly, including a first detector 116 and a second detector 117, is arranged in a beam guide tube 104 for detecting secondary electrons and / or backscattered electrons. The first detector 116 is arranged along a first optical axis OA1 on the electron source side, while the second detector 117 is arranged along the first optical axis OA1 on the object side within the beam guide tube 104. The first detector 116 and the second detector 117 are offset from each other in the direction of the first optical axis OA1 of the electron beam assembly 100. Each of the first detector 116 and the second detector 117 has a channel opening through which the electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guide tube 104. The first optical axis OA1 of the electron beam assembly 100 extends through the corresponding channel opening.

[0104] The second detector 117 is primarily used to detect secondary electrons. Upon exiting the object 114, the secondary electrons initially possess low kinetic energy and arbitrary direction of motion. Through a strong extraction field emanating from the tubular electrode 113, the secondary electrons are accelerated toward the first objective lens 107. The secondary electrons enter the first objective lens 107 approximately parallel to the surface. The beam diameter of the secondary electron beam is also kept relatively small within the first objective lens 107. The first objective lens 107 then exerts a strong influence on the secondary electrons, producing a relatively short focus with a sufficiently steep angle relative to the first optical axis OA1, causing the secondary electrons to diverge far apart downstream of the focal point and incident on the effective region of the second detector 117. In contrast, only a small fraction of the electrons are detected by the second detector 117; these electrons are backscattered at the object 114, meaning they are backscattered electrons with relatively higher kinetic energy compared to the secondary electrons emitted from the object 114. The high kinetic energy of the backscattered electrons as they exit object 114 and the angle relative to the first optical axis OA1 result in the beam waist (i.e., the region with the smallest diameter of the beam) of the backscattered electrons being located near the second detector 117. Most of the backscattered electrons pass through the channel opening of the second detector 117. Therefore, the first detector 116 is essentially used to detect the backscattered electrons.

[0105] In another embodiment of the electron beam apparatus 100, the first detector 116 may further be implemented as having a reverse field grating 116A. The reverse field grating 116A is arranged on the side of the first detector 116 facing the object 114. The reverse field grating 116A has a negative potential relative to the potential of the beam guide tube 104, such that high-energy backscattered electrons pass only through the reverse field grating 116A to reach the first detector 116. Furthermore, or alternatively, the second detector 117 has another reverse field grating, designed and functioning similarly to the aforementioned reverse field grating 116A of the first detector 116.

[0106] The detection signals generated by the first detector 116 and the second detector 117 are used to generate one or more images of the surface of the object 114.

[0107] For clarity, the apertures of the first aperture unit 108 and the second aperture unit 109, as well as the channel openings 117 of the first detector 116 and the second detector, appear disproportionately large in the accompanying drawings. The channel openings of the first detector 116 and the second detector 117 have a diameter perpendicular to the first optical axis OA1 ranging from 0.5 mm to 5 mm. For example, the channel openings may have a circular design with a diameter ranging from 1 mm to 3 mm, perpendicular to the first optical axis OA1.

[0108] In the exemplary embodiment depicted herein, the second aperture unit 109 is configured as a pinhole aperture and includes a second aperture 118 for allowing an electron beam to pass through. This second aperture has a range of 5 μm to 500 μm, for example, 35 μm. Alternatively, in another embodiment, the second aperture unit 109 is provided with multiple apertures that can be mechanically displaced relative to the electron beam or can be reached by a single electron beam using electrical and / or magnetic deflection elements. The second aperture unit 109 is implemented as a pressure stage unit. The second aperture unit separates a first region from a second region in which an electron source 101 is arranged and an ultra-high vacuum (10) exists. -7 hPa to 10 -12 hPa), the second region has a high vacuum (10 hPa). -3 hPa to 10 -7 The second region is the intermediate pressure region of the bundle guide tube 104, which leads to the object chamber 201.

[0109] like Figure 4 The stage 122 shown is configured to move in three directions perpendicular to each other: the x-direction (first stage axis), the y-direction (second stage axis), and the z-direction (third stage axis). Furthermore, the stage 122 can rotate about two mutually perpendicular axes of rotation: the first stage axis of rotation and the second stage axis of rotation.

[0110] The electron beam apparatus 100 further includes a third detector 121 disposed in the object chamber 201. More precisely, the third detector 121 is disposed downstream of the stage 122, as seen from the electron source 101 along the first optical axis OA1. The stage 122 can be rotated such that the electron beam can be radiated through the object 114. As the electron beam passes through the object 114 to be inspected, the electrons of the electron beam interact with the material of the object 114. The third detector 121 detects the electrons that have passed through the object 114 to be inspected.

[0111] A radiation detector 500 is arranged in the object chamber 201 for detecting interacting radiation, such as X-ray radiation and / or cathodoluminescence. Additionally, the electron beam apparatus 100 includes a chamber detector 134 arranged in the object chamber 201. The chamber detector 134 specifically detects interacting particles, such as secondary electrons and / or backscattered electrons.

[0112] Chamber detector 134, first detector 116, second detector 117, and third detector 121 are connected to device control unit 123, which has monitor 124 and database 129. Radiation detector 500 is also connected to device control unit 123. This connection is not shown for clarity. Device control unit 123 processes the detection signals generated by first detector 116, second detector 117, third detector 121, chamber detector 134, and / or radiation detector 500, and displays the detection signals in image form on monitor 124.

[0113] The electron beam device 100 also includes a first deflection device 131, a second deflection device 132, and a third deflection device 135. The first deflection device 131, the second deflection device 132, and the third deflection device 135 are connected to a deflection device control unit 133, which provides current and / or voltage to the first deflection device 131, the second deflection device 132, and the third deflection device 135.

[0114] Gas injection unit 127 is disposed at object chamber 201 and may include gas needle 127A. In another embodiment, gas injection unit 127 may include an assembly of multiple gas needles or any other gas injection device of a gas injection unit that supplies gas to object 114. For example, gas injection unit 127 may be moved or moved away from a particular injection position relative to object 114 in object chamber 201.

[0115] The electron beam apparatus 100 further includes a high-voltage control unit 137 for adjusting the accelerating voltage of the electrons in the electron beam. Furthermore, the electron beam apparatus 100 includes a current control unit 136 for adjusting the current of the first objective lens 107.

[0116] As described above, the particle beam device 200 is equipped with an ion beam device 300, which is also arranged on the object chamber 201. The electron beam device 100 is arranged vertically relative to the object chamber 201. In contrast, the ion beam device 300 is tilted at an angle of approximately 50° relative to the electron beam device 100.

[0117] The ion beam apparatus 300 has a second beam generator in the form of an ion beam generator 301, which includes an ion source 301A, an ion suppression electrode 301B, and an ion extraction electrode 301C. Ions are generated by the ion beam generator 301 and form a second particle beam in the form of an ion beam. The ions are accelerated by the ion extraction electrode 301C, which is at a predetermined potential. The second particle beam then passes through the ion optics of the ion beam apparatus 300, wherein the ion optics include a focusing lens 303 and a second objective lens 304. The second objective lens 304 ultimately generates an ion probe, which is focused onto an object 114 arranged on a stage 122. The ion beam apparatus 300 includes a second optical axis OA2.

[0118] The ion beam apparatus 300 further includes an ion source supply unit 302 for supplying voltage and / or current to the ion beam generator 301.

[0119] An adjustable or selectable aperture unit 306, a first electrode arrangement 307, and a second electrode arrangement 308 are arranged above the second objective lens 304 (i.e., toward the ion beam generator 301), wherein the first electrode arrangement 307 and the second electrode arrangement 308 are implemented as scanning electrodes. A second particle beam is scanned on the surface of the object 114 by the first electrode arrangement 307 and the second electrode arrangement 308, wherein the first electrode arrangement 307 operates along a first direction and the second electrode arrangement 308 operates along a second direction, opposite to the first direction. Thus, scanning is performed along, for example, the x-direction. Scanning along the y-direction perpendicular to it is achieved by additional electrodes (not depicted here) rotated 90° from the first electrode arrangement 307 and the second electrode arrangement 308.

[0120] To better illustrate the various units of the particle beam device 200, Figure 4 The distances between the various units of the particle beam device 200 shown appear disproportionately large.

[0121] Additionally, the particle beam device 200 includes a processor 128 to which program code is loaded for controlling the particle beam device 200 in a manner that executes the method according to the invention.

[0122] Figure 5A Another embodiment of the combination device 200 is shown. Figure 5A The embodiments shown are based on Figure 4 The embodiments are shown. The same reference numerals denote the same units. Therefore, regarding... Figure 4 For details of the embodiments, please refer to the above content, which is also applicable to Figure 5A The embodiment. However, instead of having a second particle pillar, Figure 5AThe embodiments include a laser device 700 that generates a laser beam. The laser device 700 may or may not have a point of overlap on the object 114 along with a primary electron beam. In another embodiment, the laser device 700 is also arranged in the object chamber 201, in addition to the ion beam device. In yet another embodiment, the laser device 700 is arranged in a separate chamber of the combined device 200. Here, the object 114 is moved automatically or manually from the object chamber 201 to the separate chamber using a stage 122 in such a way that the laser beam from the laser device 700 is directed to the object 114.

[0123] The stage 122 of the aforementioned particle beam device 200 will now be discussed in more detail. The stage 122 is implemented as a movable object stage, in which... Figure 6 and Figure 7 The image is schematically illustrated. It is noted that the invention is not limited to the stage 122 depicted herein. Rather, the invention can have any movable stage suitable for its application.

[0124] Object 114 is arranged on stage 122. Stage 122 has moving elements that ensure movement of stage 122 in such a way that relevant areas on object 114 can be inspected by a particle beam. Figure 6 and Figure 7 The moving element is schematically illustrated and explained below.

[0125] The stage 122 has a first moving element 600 in the housing 601 of the object chamber 201, in which the stage 122 is arranged. The first moving element 600 facilitates movement of the stage 122 along the z-axis (third stage axis). Further, a second moving element 602 is provided. The second moving element 602 facilitates rotation of the stage 122 about the first stage rotation axis 603 (also referred to as the tilt axis). This second moving element 602 is used to tilt the object 114 arranged on the stage 122 about the first stage rotation axis 603.

[0126] A third moving element 604 is then arranged at the second moving element 602. This third moving element is implemented as a guide for the carriage and ensures that the platform 122 can move in the x-direction (the axis of the first platform). The aforementioned carriage is another moving element, namely a fourth moving element 605. The fourth moving element 605 is implemented such that the platform 122 can move in the y-direction (the axis of the second platform). For this purpose, the fourth moving element 605 has a guide in which another carriage is guided.

[0127] The carriage is then configured to have a fifth moving element 606 that facilitates the rotation of the object 114 about a second platform rotation axis 607. The second platform rotation axis 607 is oriented perpendicular to the first platform rotation axis 603.

[0128] Due to the above arrangement, the stage 122 of the exemplary embodiment discussed herein has the following kinematic chain: first moving element 600 (moving along the z-axis) - second moving element 602 (rotating about the first stage rotation axis 603) - third moving element 604 (moving along the x-axis) - fourth moving element 605 (moving along the y-axis) - fifth moving element 606 (rotating about the second stage rotation axis 607).

[0129] In another exemplary embodiment (not shown here), additional moving elements are arranged at the stage 122 to facilitate movement along additional translation axes and / or about additional rotation axes.

[0130] Each of the aforementioned moving elements is connected to a stepper motor. Therefore, the first moving element 600 is connected to the first stepper motor M1, and is driven by the driving force provided by the first stepper motor M1. The second moving element 602 is connected to the second stepper motor M2, which drives the second moving element 602. The third moving element 604 is then connected to the third stepper motor M3. The third stepper motor M3 generates the driving force for driving the third moving element 604. The fourth moving element 605 is connected to the fourth stepper motor M4, wherein the fourth stepper motor M4 drives the fourth moving element 605. Further, the fifth moving element 606 is connected to the fifth stepper motor M5. The fifth stepper motor M5 generates the driving force for driving the fifth moving element 606. The aforementioned stepper motors M1 to M5 are controlled by the control unit 608 (see [link to control unit]). Figure 7 ).

[0131] The stage 122 may also include at least one piezoelectric unit and / or DC unit for moving the aforementioned moving element.

[0132] Figure 8 An exemplary embodiment of the method according to the present invention is shown. The method is performed using a particle beam device 200.

[0133] In method step S1, material layer 140 is arranged on the area of ​​object 114. Figure 11 The diagram shows material layer 140 and object 114. Material layer 140 may cover only a portion of object 114, i.e., as shown... Figure 11 The area shown above. Additionally, material layer 140 can cover the entire surface of object 114, such as... Figure 12 As shown.

[0134] To arrange the material layer 140 on a region of the object 114, at least one gas is directed to the region of the object 114 using a gas injection unit 127 and electron beam induced deposition and / or ion beam induced deposition. The material can be provided as a gaseous preliminary substance referred to as a precursor and directed to the region of the object 114 using the gas injection unit 127. For example, the material layer 140 can be provided using at least one of the following materials: platinum, carbon, tungsten, copper, an insulator, and / or water. The material layer 140 can have a thickness, for example, between 10 nm and 1000 nm or between 100 nm and 250 nm, wherein the boundaries are included within the aforementioned range.

[0135] Material layer 140 may include several layers, which may be made of different materials. For example, the first layer of material layer 140 may be made of copper, and the second layer of material layer 140 may be made of platinum.

[0136] The object 114 is made of a different material than the material used to form the material layer 140. As described above, this makes it easy to determine whether the material layer 140 has been completely ablated, allowing the acquisition of three-dimensional image data of the object 114 to begin.

[0137] In method step S2, a first particle beam in the form of an electron beam is used to generate at least one image of the material layer 140. The image is generated after the material layer 140 has been arranged on the area of ​​the object 114. When the electron beam is focused onto the material layer 140 using a first objective lens 107, and when the electron beam strikes the material layer 140, interacting particles and / or interacting radiation are generated. For example, the interacting particles may be secondary electrons or backscattered electrons. The interacting radiation may be, for example, X-ray radiation or cathodoluminescence. The interacting particles and / or interacting radiation are detected using at least one of the following detectors: chamber detector 134, first detector 116, second detector 117, third detector 121, and radiation detector 500.

[0138] In method step S3, during and / or after generating an image of material layer 140, a second particle beam in the form of an ion beam and / or a laser beam is used to ablate portions of material layer 140. The ion beam and / or laser beam move relative to these portions of the layer in the direction of movement MD (see [link to method S3]). Figure 11These partial layers are arranged along the direction of movement MD. Furthermore, these partial layers can be arranged vertically to each other along the direction of movement MD. Specifically, the first surface of the first partial layer is arranged parallel to or substantially parallel to the second surface of the second partial layer, wherein the substantially parallel arrangement of these partial layers includes a deviation of less than 1° relative to the parallel arrangement of these partial layers. When arranged on a region of object 114, the thickness of each partial layer is considerably small compared to the thickness of material layer 140. The thickness of each partial layer subsequently ablated can be less than 2 nm, particularly less than 1 nm or less than 0.5 nm.

[0139] However, the present invention is not limited to the aforementioned range of thickness for material layer 140 or each partial layer. Rather, any thickness of material layer 140 or each partial layer suitable for performing the method according to the present invention can be selected.

[0140] To ablate these partial layers, an ion beam and / or a laser beam is focused onto the respective partial layer and ablates it. At least one gas can be used to ablate the respective partial layer that interacts with the ion beam. The gas can be provided by the gas injection unit 127.

[0141] The ion beam can be moved along the movement direction MD using the second objective lens 304, the first electrode arrangement 307, and / or the second electrode arrangement 308. Alternatively, a guiding unit including, for example, at least one mirror can be used to move the laser beam along the movement direction MD. Furthermore or alternatively, the object 114 can be moved relative to the movement direction MD using a stage 122 on which the object 114 is arranged.

[0142] When a portion of the material layer is ablated, the relative movement of the ion beam and / or laser beam is adjusted in method step S4. The relative movement of the ion beam and / or laser beam is adjusted such that the first thickness of the first portion of the layer ablated from material layer 140 is the same as or substantially the same as the second thickness of the second portion of the layer ablated from material layer 140, wherein the deviation regarding the substantially identical thickness is less than 1 nm. Similarly, the relative movement of the ion beam can be adjusted using, for example, a second objective lens 304, a first electrode arrangement 307, and / or a second electrode arrangement 308. Alternatively or additionally, the relative movement can be adjusted, for example, by using a stage 122 on which the object 114 is disposed.

[0143] After the material layer 140 has been partially or completely ablated, the object 114 is imaged using an electron beam in method step S5. An image of the object 114 is generated by focusing the electron beam onto a region of the object 114 using a first objective lens 107. When the electron beam strikes a region of the object 114, interacting particles and / or secondary interacting radiation are generated. The interacting particles can be secondary electrons and / or backscattered electrons. The interacting radiation can be X-ray radiation or cathodic emission. At least one of the following detectors is used to detect the interacting particles and / or interacting radiation: chamber detector 134, first detector 116, second detector 117, third detector 121, and radiation detector 500.

[0144] Method step S5 can be part of method step S6. In method step S6, three-dimensional image data of object 114 is acquired. Figure 9 The method steps S6 are explained in more detail. Figure 9 The sub-steps of method step S6 are shown.

[0145] In substep S6A, an electron beam is used to generate an image of the first surface of a region of object 114. When the electron beam strikes the first surface, interacting particles and / or interacting radiation are generated. The interacting particles can be secondary electrons and / or backscattered electrons. The interacting radiation can be X-ray radiation or cathodic emission. At least one of the following detectors is used to detect the interacting particles and / or interacting radiation: chamber detector 134, first detector 116, second detector 117, third detector 121, and radiation detector 500. The detection signals generated by the respective detectors during detection are used to generate an image of the first surface. Thus, image data about the first surface is obtained, and in substep S6B, the image data is stored in database 129.

[0146] In substep S6C, for example, an ion beam and / or laser beam, as described above, is used to ablate the object layer of object 114 in the region of object 114. The object layer is ablated during or after the generation of an image of the first surface of the region of object 114. Another surface, namely the second surface of object 114, is exposed. In substep S6D, an electron beam is then directed to the exposed second surface. When the electron beam strikes the second surface, interacting particles and / or interacting radiation are generated. The interacting particles can be secondary electrons and / or backscattered electrons. The interacting radiation can be X-ray radiation or cathodic emission. At least one of the following detectors is used to detect the interacting particles and / or interacting radiation: chamber detector 134, first detector 116, second detector 117, third detector 121, and radiation detector 500. Detection signals generated by the respective detectors during detection are used to generate an image of the second surface. Thus, image data about the second surface is obtained, and in substep S6E, the image data is stored in database 129.

[0147] In method step S6F, it is determined whether another surface of object 114 should be exposed. If it should be exposed, substeps S6C to S6E are repeated until no other surface needs to be exposed. If no other surface of object 114 needs to be exposed, three-dimensional image data is generated in substep S6G, thus obtaining a three-dimensional representation of object 114.

[0148] Figure 10 Another embodiment of the method according to the invention is shown. This other embodiment is based on... Figure 8 The embodiments described above. Therefore, referring to the above content, it is also applicable to... Figure 10 Another embodiment is shown. Figure 10 Another embodiment includes an additional method step S0 performed before method step S1. In method step S0, at least one mark 141 is provided on the object 114 (see...). Figure 11 Mark 141 may be a first mark used to adjust the relative movement of the ion beam in such a way that the first thickness of a first portion of the material layer 140 is the same as or substantially the same as the second thickness of a second portion of the material layer 140. Mark 141 is provided by using gas injection unit 127 and by using electron beam induced deposition and / or ion beam induced deposition to guide at least one gas onto the object 114 to arrange the mark 141 on the object 114. For example, at least one of the following materials may be used to provide the mark 141: platinum, carbon, tungsten, copper, insulators and / or water. Similarly, the material may be provided as a gaseous preliminary substance referred to as a precursor and guided onto the object 114 using gas injection unit 127. For example, mark 141 may include two longitudinal marks that may be applied to the mark surface of the object 114 (see Figure 11The two longitudinal markers can be arranged in a V-shape relative to the direction of movement of the ion beam MD, and can intersect at a point on the object 114.

[0149] Furthermore, after the material layer 140 has been disposed on the object 114, another mark 142, i.e., a second mark, can be set on the material layer 140. This can be part of method step S1. The other mark 142 can be set on the material layer 140, for example, by using the gas injection unit 127 and by using electron beam induced deposition and / or ion beam induced deposition to guide gas to the material layer 140. For example, at least one of the following materials can be used to set the other mark 142: platinum, carbon, tungsten, copper, insulators, and / or water. Similarly, the material can be provided as a gaseous preliminary substance referred to as a precursor and guided to the object 114 using the gas injection unit 127.

[0150] Another mark 142 is used to identify when the step of ablation of a portion of the material layer 140 should begin. In other words, the other mark 142 can be used to identify when the ion beam is focused on the material layer 140. The other mark 142 can be the shape of a dot on the material layer 140 or a hole in the material layer 140. Moreover, the other mark 142 can be used to identify whether the material layer 140 has been completely ablated or to identify the remaining thickness of the material layer 140 after ablation of some portions of the layer.

[0151] Alternatively, the mark 141 may be used to identify whether the material layer 140 has been completely ablated or to identify the remaining thickness of the material layer 140 after some partial layers have been ablated.

[0152] In one embodiment of the method according to the invention, the thickness of the material layer 140 is further or alternatively identified. For example, an image generated by an electron beam is used to determine the thickness. The identified thickness is used to select the initial advance of the ion beam and / or laser beam along the direction of movement MD, and thus to select the ion beam advance speed or the laser beam advance speed. This initial advance of the ion beam and / or laser beam along the direction of movement MD corresponds substantially to the advance of the ion beam and / or laser beam along the direction of movement MD required when acquiring three-dimensional image data of the object 114 for achieving the same or substantially the same thickness of the partial layers of the material layer 140 and / or the ablation of the object 114.

[0153] The method according to the invention offers advantages over existing technologies. A transition phase occurs at the beginning of the ion beam and / or electron beam cycle. The transition phase includes a stabilization period, during which the ion beam and / or electron beam interacts only with material layer 140. During the stabilization period, no image of the surface of object 114 is obtained for acquiring three-dimensional image data of object 114. Furthermore, the transition phase includes a change period, which begins after the stabilization period has ended. During the change period, the relative movement of the ion beam is adjusted such that the first thickness of a first portion of material layer 140 is the same as or substantially the same as the second thickness of a second portion of material layer 140. After this adjustment, layers with the same or substantially the same thickness can be ablated using an ion beam and / or laser beam. Once material layer 140 has been partially or completely ablated, three-dimensional image data acquisition begins in the stabilization phase. The method according to the invention provides the possibility of surface imaging of all exposed layers of object 114 and provides uniform thickness of all ablated layers of object 114, which form the basis for a three-dimensional representation of object 114. Information about the exposed surfaces of the layers will not be lost, because all surfaces of all ablated layers will contribute to the three-dimensional representation of object 114. Moreover, considerations have shown that the thickness change of some layers during the change period is less than the thickness change of layers ablated from objects in the prior art during the change period.

[0154] Now combine Figure 13 The advantages of the present invention will be discussed. In particular, Figure 13 The diagram shows the cycle of ion beam generator 301 over time and the thickness of layers of object 114 over time, which are ablated using an ion beam.

[0155] Figure 13 The cycle of the suppression electrode is illustrated, and three emission cycles are shown: a first emission cycle I, a second emission cycle II, and a third emission cycle III. The first emission cycle I begins (i) after the material layer 140 is placed on the object 114, (ii) when the user begins the process for acquiring three-dimensional image data of the object 114, and (iii) after the emission current of the ion beam has been controlled and / or adjusted for the first time. The second emission cycle II begins (i) after the emission current of the ion beam has been controlled and / or adjusted for the second time, and (ii) after another material layer 140 has been placed on the object 114. The third emission cycle III begins (i) after the emission current of the ion beam has been controlled and / or adjusted for the third time, and (ii) after another material layer 140 has been placed on the object 114.

[0156] The first transition phase 1 occurs at the beginning of the first emission cycle I. The first transition phase 1 includes a first stabilization period SP1, during which the ion beam interacts only with the material layer 140. During the first stabilization period SP1, no image of the surface of the object 114 is acquired for obtaining three-dimensional image data of the object 114. Furthermore, the first transition phase 1 includes a first change period VP1, which begins after the first stabilization period SP1 has ended. During the first change period VP1, the relative movement of the ion beam is adjusted such that the first thickness of a first portion of the material layer 140 is the same as or substantially the same as the second thickness of a second portion of the material layer 140. After this adjustment, layers with the same or substantially the same thickness can be ablated using the ion beam. Once the material layer 140 has been partially or completely ablated, the acquisition of three-dimensional image data of the object 114 begins in the first stabilization phase 1.

[0157] The second transition phase 2 occurs at the beginning of the second emission cycle II. The second transition phase 2 includes a second stabilization period SP2, during which the ion beam interacts only with the material layer 140. During the second stabilization period SP2, no image of the surface of the object 114 is acquired for obtaining three-dimensional image data of the object 114. Furthermore, the second transition phase 2 includes a second change period VP2, which begins after the end of the second stabilization period SP2. During the second change period VP2, the relative movement of the ion beam is adjusted such that the first thickness of the first portion of the material layer 140 is the same as or substantially the same as the second thickness of the second portion of the material layer 140. After this adjustment, layers with the same or substantially the same thickness can be ablated using the ion beam. Once the material layer 140 has been partially or completely ablated, the acquisition of three-dimensional image data of the object 114 begins in the second stabilization phase 2.

[0158] like Figure 13 As shown, the second emission cycle II is shorter than the first emission cycle I and the third emission cycle III. Due to the stability of the ion emission current and therefore due to the control and / or adjustment of the ion beam emission current, the acquisition of three-dimensional image data of object 114 is suspended during the second stabilization phase 2 until the start of the third emission cycle III.

[0159] The third transition phase 3 occurs at the beginning of the third emission cycle III. The third transition phase 3 includes a third stabilization period SP3, during which the ion beam interacts only with the material layer 140. During the third stabilization period SP3, no image of the surface of the object 114 is obtained for acquiring three-dimensional image data of the object 114. Furthermore, the third transition phase 3 includes a third variation period VP3, which begins after the end of the third stabilization period SP3. During the third variation period VP3, the relative movement of the ion beam is adjusted such that the first thickness of the first portion of the material layer 140 is the same as or substantially the same as the second thickness of the second portion of the material layer 140. After this adjustment, layers with the same or substantially the same thickness can be ablated using the ion beam. Once the material layer 140 has been partially or completely ablated, the acquisition of three-dimensional image data of the object begins in the third stabilization phase 3.

[0160] The various embodiments discussed herein can be combined with each other in suitable combinations with the systems described herein. Furthermore, in some cases, the flowcharts, processes, and / or the order of steps in the described process processing can be modified where appropriate. Further, various aspects of the systems described herein can be implemented using software, hardware, combinations of software and hardware, and / or other computer implementation modules or devices having the described features and performing the described functions. The system may further include a display and / or other computer components for providing a suitable interface with a user and / or with other computers.

[0161] The software implementation of aspects of the systems described herein may include executable code stored in a computer-readable medium and executed by one or more processors. The computer-readable medium may include volatile and / or non-volatile memory, and may include, for example, computer hard disk drives, ROM, RAM, flash memory, cloud storage, portable computer storage media such as CD-ROM, DVD-ROM, SO cards, flash drives, or other drives with an interface such as a Universal Serial Bus (USB), and / or any other suitable tangible or non-transitory computer-readable medium or computer memory that can store and execute the executable code by a processor. The systems described herein can be used in conjunction with any suitable operating system.

[0162] The features of the invention disclosed in this specification, drawings, and claims may be essential for implementing the invention in the various embodiments, either individually or in any combination. The invention is not limited to the described embodiments. Modifications can be made within the scope of the claims, taking into account the knowledge of those skilled in the art.

[0163] List of reference numerals

[0164] 100 Electron Beam Device

[0165] 101 Electronic Source

[0166] 102 Lead-out electrode

[0167] 103 Anode

[0168] 104 bundle guide tubes

[0169] 105 First Converging Lens

[0170] 106 Second Converging Lens

[0171] 107 First Objective

[0172] 108 First Aperture Unit

[0173] 108A First Aperture

[0174] 109 Second Aperture Unit

[0175] 110 Electrode

[0176] 111 coil

[0177] 112 Single Electrode

[0178] 113 Tubular electrode

[0179] 114 objects

[0180] 115 Scanning Device

[0181] 116 First Detector

[0182] 116A Opposite Field Grating

[0183] 117 Second Detector

[0184] 118 Second Aperture

[0185] 121 Third Detector

[0186] 122 platforms

[0187] 123 Device Control Unit

[0188] 124 monitor

[0189] 127 Gas Injection Unit

[0190] 127A Gas Needle

[0191] 128 processor

[0192] 129 Database

[0193] 131 First Deflection Unit

[0194] 132 Second Deflection Unit

[0195] 133 Deflection device control unit

[0196] 134-chamber detector

[0197] 135 Third deflection device

[0198] 136 Current Control Unit

[0199] 137 High Voltage Control Unit

[0200] 140 material layers

[0201] 141 Marker (First Marker)

[0202] 142 Another mark (second mark)

[0203] 200 Particle Beam Device

[0204] 201 Object Room

[0205] 300 Ion Beam Device

[0206] 301 Ion Beam Generator

[0207] 301A Ion Source

[0208] 301B Ion Suppression Electrode

[0209] 301C ion extraction electrode

[0210] 302 Ion Source Supply Unit

[0211] 303 Converging Lens

[0212] 304 Second Objective

[0213] 306 adjustable or selectable aperture unit

[0214] 307 First Electrode Arrangement

[0215] 308 Second Electrode Arrangement

[0216] 500 radiation detector

[0217] 600 First Moving Element

[0218] 601 Housing

[0219] 602 Second Moving Element

[0220] 603 First stage rotation axis

[0221] 604 Third Moving Element

[0222] 605 Fourth Moving Element

[0223] 606 Fifth Moving Element

[0224] 607 Second stage rotation axis

[0225] 608 Control Unit

[0226] 700 laser device

[0227] EC emission current

[0228] I. First Launch Cycle

[0229] II. Second Launch Cycle

[0230] III. Third Launch Cycle

[0231] M1 First Stepper Motor

[0232] M2 Second Stepper Motor

[0233] M3 Third Stepper Motor

[0234] M4 fourth stepper motor

[0235] M5 fifth stepper motor

[0236] MD movement direction

[0237] OA1 First Optical Axis

[0238] OA2 Second Optical Axis

[0239] S0 to S6 Method Steps

[0240] S6A to S6G sub-steps

[0241] SP1 First Stable Period

[0242] SP2 Second Stable Period

[0243] SP3 Third Stable Period

[0244] Stability 1 First Stability Phase

[0245] Stability 2, Second Stability Phase

[0246] Stability 3, Third Stability Phase

[0247] Transition 1: First Transition Phase

[0248] Transition 2: Second Transition Phase

[0249] Transition 3: The Third Transition Phase

[0250] VP1 First Change Period

[0251] VP2 Second Change Period

[0252] VP3 Third Change Period

Claims

1. A method for analyzing, imaging and / or processing a region of an object (114) using a particle beam device (200), the method comprising: - arranging at least one material layer (140) on a region of an object (114); - generating at least one first image of the material layer (140) using a first particle beam, wherein the first particle beam is generated using a first particle beam generator, wherein the first particle beam comprises first charged particles, wherein the first particle beam is focused on the material layer (140) using a first objective lens (107), wherein first interaction particles and / or first interaction radiation are generated when the first particle beam impinges on the material layer (140), and wherein the first interaction particles and / or the first interaction radiation are detected using a detector (116, 117, 121, 134, 500); - ablating partial layers of the material layer (140) using a laser beam and / or a second particle beam and by relatively moving the laser beam and / or the second particle beam with respect to the partial layers of the material layer (140) in a movement direction (MD), wherein the laser beam is generated using a laser device (700), and wherein the second particle beam is generated using a second particle beam generator, wherein the second particle beam comprises second charged particles, wherein the second particle beam is focused on the partial layers using a second objective lens (304), wherein the partial layers are arranged along the movement direction (MD); - adjusting the relative movement of the laser beam and / or the second particle beam in such a way that a first thickness of a first partial layer of the material layer (140) is the same or substantially the same as a second thickness of a second partial layer of the material layer (140) while ablating the partial layers of the material layer (140); and - generating at least a second image of the region of the object (114) using the first particle beam after the material layer (140) has been partially or completely ablated, wherein the first particle beam is focused on the region of the object (114) using the first objective lens (107), wherein second interaction particles and / or second interaction radiation are generated when the first particle beam impinges on the region of the object (114), and wherein the second interaction particles and / or the second interaction radiation are detected using the detector (116, 117, 121, 134, 500).

2. The method according to claim 1, further comprising: - providing at least one first gas to the region of the object using a first gas injection unit; and - arranging the material layer (140) on the region of the object (114) using electron beam-induced deposition and / or ion beam-induced deposition. The material layer (140) is provided using at least one of:

3. The method of claim 1 or 2, wherein, (i) platinum; (ii) carbon; (iii) tungsten; (iv) copper; (v) an insulator; (vi) water. ​ 4. The method according to claim 2, further comprising providing at least one first marker (141) on the object (114), wherein, The first mark (141) is used to adjust the step of relative movement of the laser beam and / or the second particle beam in such a way that a first thickness of a first partial layer of the material layer (140) is the same or substantially the same as a second thickness of a second partial layer of the material layer (140).

5. The method according to claim 4, further comprising one of the following features: (i) using a second gas injection unit (127) and using electron beam induced deposition and / or ion beam induced deposition to provide at least one second gas to the object (114) for setting the first mark (141); (ii) using the first particle beam and / or the second particle beam to etch the first mark (141) on the object (114).

6. The method of claim 1 or 2, wherein, Arranging the material layer (140) comprises a step of providing the material layer (140) with a first material, wherein a region of the object (114) comprises a second material, and wherein the first material is different from the second material.

7. The method of claim 1 or 2, wherein, The step of arranging the material layer (140) on a region of the object (114) comprises - providing a first partial material layer of the material layer (140), wherein the first partial material layer comprises a first partial material, and - providing a second partial material layer of the material layer (140), wherein the second partial material layer comprises a second partial material, wherein the first partial material is different from the second partial material.

8. The method according to claim 5, further comprising providing at least one second mark (142) on the material layer (140), wherein, The second mark (142) is used to identify when to start the step of ablating a partial layer of the material layer (140).

9. The method according to claim 8, further comprising one of the following features: (i) using a third gas injection unit and using electron beam induced deposition and / or ion beam induced deposition to provide at least one third gas to the material layer (140) for setting the second mark (142); (ii) using the first particle beam and / or the second particle beam to etch the second mark (142) on the material layer (140).

10. The method according to claim 9, further comprising at least one of the following: (i) the first gas injection unit is the same as the second gas injection unit; (ii) the first gas injection unit is the same as the third gas injection unit; (iii) the second gas injection unit is the same as the third gas injection unit; (iv) the first gas is the same as the second gas; (v) the first gas is the same as the third gas; (vi) the second gas is the same as the third gas.

11. The method of claim 1 or 2, wherein, The method comprises at least one of the following steps: (i) using an electron beam generator as the first particle beam generator for generating an electron beam comprising electrons; (ii) using an ion beam generator as the second particle beam generator for generating an ion beam comprising ions.

12. The method of claim 1 or 2, wherein, The method comprises the following steps: - using the first particle beam to generate an image of a first surface of a region of the object (114), wherein interaction particles and / or interaction radiation are detected, which are generated when the first particle beam impinges on the first surface, wherein first detection signals generated by the detector (116, 117, 134, 500) during the detection are used to image the first surface, - obtaining and storing image data about the first surface, - ablating an object layer of the object (114) in the region of the object (114) to expose a second surface of the object (114), wherein the laser beam and / or the second particle beam are used to ablate the object layer, - directing the first particle beam to the exposed second surface, detecting interaction particles and / or interaction radiation occurring when the first particle beam impinges on the second surface, and using second detection signals generated by the detector (116, 117, 121, 134, 500) during the detection to image the second surface, - obtaining and storing image data about the second surface, and - generating a three-dimensional representation based on the image data about the first surface and based on the image data about the second surface.

13. The method of claim 1 or 2, wherein, The method comprises the following steps: - identifying a layer thickness of the material layer (140), and - using the identified layer thickness to select a preliminary advancement of the second particle beam along a movement direction (MD) of the second particle beam.

14. A computer program product comprising program code which is loaded into a processor (128) and which, when executed, controls a particle beam device (200) in such a way that the method according to one of the preceding claims is carried out.

15. A particle beam device (200) for analyzing, imaging and / or processing a region of an object (114), comprising - at least one first particle beam generator for generating a first particle beam comprising first charged particles, - at least one first objective (107) for focusing the first particle beam onto the object (114) and / or onto a material layer (140) arranged on the object (114), - at least one ablation device for ablating material from the object (114); - a detector (116, 117, 121, 134, 500) for detecting interaction particles and / or interaction radiation, which are generated when the first particle beam impinges on the object (114) and / or on the material layer (140) arranged on the object (114), and - a processor (128) into which the computer program product according to claim 14 is loaded.

16. The particle beam device (200) according to claim 15, further comprising at least one of: - a second particle beam generator for generating a second particle beam comprising second charged particles, (i) as at least one second particle beam generator of the ablation device, the second particle beam generator being configured for generating a second particle beam comprising second charged particles, and at least one second objective (304) for focusing the second particle beam on the object (114) and / or on the material layer (140) arranged on the object (114); (ii) as a laser device (700) of the ablation device, the laser device (700) being configured for generating a laser beam.

17. The particle beam device (200) according to claim 15 or 16, further comprising at least one of: (i) a first gas injection unit for providing a first gas; (ii) a second gas injection unit for providing a second gas; (iii) a third gas injection unit for providing a third gas.

18. The particle beam device (200) according to claim 17, comprising at least one of the following features: (i) the first gas injection unit is identical to the second gas injection unit; (ii) the first gas injection unit is identical to the third gas injection unit; (iii) the second gas injection unit is identical to the third gas injection unit; (iv) the first gas is identical to the second gas; (v) the first gas is identical to the third gas; (vi) the second gas is identical to the third gas.

19. The particle beam device (200) according to claim 16, wherein - the first particle beam generator is an electron beam generator for generating an electron beam comprising electrons, wherein - the second particle beam generator is an ion beam generator for generating an ion beam comprising ions.

Images