Substrate processing equipment

Abstract

In a substrate processing device (1), a plurality of collecting pipes (61a to 61c) are arranged above a plurality of processing units (31) arranged in a vertical direction. The plurality of collecting pipes (61a to 61c) correspond to a plurality of fluid types, respectively. In addition, a plurality of exhaust pipes (4) are provided that extend upward from the plurality of processing units (31) and into which exhaust gases from the plurality of processing units (31) flow respectively. A flow path switching unit (5) is provided at the upper end of each exhaust pipe (4), and the flow path switching unit (5) connects the upper end to the plurality of collecting pipes (61a to 61c) and switches the flow path of the exhaust gases flowing in the exhaust pipe (4) between the plurality of collecting pipes (61a to 61c). In the substrate processing device (1), the pressure loss in the exhaust pipe (4) can be reduced and the occupied area can be reduced.

Description

Technical Field

[0001] The invention relates to a substrate processing device. Background Art

[0002] In the past, in the manufacture of semiconductor devices, a substrate processing device was used that uses various processing fluids to process a semiconductor substrate (hereinafter referred to as a "substrate"). In addition, in JP Patent Publication No. 2016-72480 (Document 1), an exhaust switching device is disclosed that switches between three exhaust processing devices at the outlet end of the exhaust gas discharged from the substrate processing device according to the type of the processing fluid. In Document 1, the substrate processing device is arranged in a clean room, and the exhaust switching device is arranged in the lower space of the clean room, which is called a secondary clean area. By setting the exhaust switching device, the environmental burden can be reduced. In addition, International Publication No. WO2014 / 103523 discloses an exhaust switching device in which exhaust switching units corresponding to multiple processing chambers are embedded in a multi-layer state, and it is recorded that casters are installed on the exhaust switching device to make it movable, or the exhaust switching device is fixed to the ground of the installation location with bolts.

[0003] However, as shown in Document 1, when the exhaust switching device is arranged in the secondary clean area, the length of the exhaust pipe from the processing part of the substrate processing device to the exhaust switching device becomes longer, so the pressure loss in the exhaust pipe becomes larger. It can be considered to arrange the exhaust switching device on the side of the processing part to shorten the exhaust pipe, but the overall footprint of the substrate processing device will increase. Summary of the invention

[0004] The present invention is a technology for a substrate processing apparatus, and its purpose is to reduce the pressure loss in an exhaust pipe and to reduce the occupied area of ​​the substrate processing apparatus.

[0005] The substrate processing device of the present invention comprises: a plurality of processing parts arranged in the up-down direction, the plurality of processing parts being capable of supplying a plurality of processing fluids to the substrate respectively; a plurality of exhaust pipes, which extend upward from the plurality of processing parts and into which the exhaust gases from the plurality of processing parts flow respectively; two or more collecting pipes, which are arranged above the plurality of processing parts and respectively correspond to two or more fluid categories obtained by classifying the plurality of processing fluids; a plurality of flow path switching parts, the plurality of flow path switching parts being respectively provided at the upper end of an exhaust pipe, and the upper end being connected to the two or more collecting pipes so that the flow path of the exhaust gas flowing in the exhaust pipe is switched between the two or more collecting pipes; and a control part, which controls the plurality of flow path switching parts according to the processing fluids used in the plurality of processing parts.

[0006] According to the present invention, it is possible to reduce pressure loss in an exhaust pipe and reduce the occupied area of ​​a substrate processing apparatus.

[0007] In a preferred embodiment of the present invention, the two or more collecting pipes overlap with the plurality of treatment units in the up-down direction.

[0008] In another preferred embodiment of the present invention, the substrate processing apparatus further includes a support frame that supports the plurality of processing units, and the two or more collecting pipes are fixed to the support frame.

[0009] In other preferred embodiments of the present invention, the two or more collecting pipes extend along the long side direction substantially perpendicular to the up-down direction, and the collection group of the multiple processing units, the multiple exhaust pipes and the multiple flow path switching units is used as a stacking unit, and the substrate processing device also has another stacking unit having the same structure as the stacking unit and located in the long side direction relative to the stacking unit.

[0010] In other preferred embodiments of the present invention, each exhaust pipe comprises: a first exhaust path extending upward from a processing unit; and a second exhaust path having a portion extending from an upper end of the first exhaust path toward a direction substantially perpendicular to the up-down direction and connected to a flow path switching unit, the upper ends of a plurality of first exhaust paths in the plurality of exhaust pipes are arranged close to each other, the lengths of the plurality of first exhaust paths are different from each other, the lengths of the plurality of second exhaust paths in the plurality of exhaust pipes are different from each other, and in each combination of two exhaust pipes included in the plurality of exhaust pipes, the length of the first exhaust path in one exhaust pipe is longer than the first exhaust path in the other exhaust pipe, and the length of the second exhaust path in the one exhaust pipe is shorter than the second exhaust path in the other exhaust pipe.

[0011] In another preferred embodiment of the present invention, each processing unit is connected to an exhaust pipe extending in the up-down direction via a long hole extending in the up-down direction.

[0012] In another preferred embodiment of the present invention, the substrate processing apparatus further includes: a plurality of liquid ejecting units for ejecting a predetermined liquid into the plurality of exhaust pipes, respectively; and a plurality of liquid discharge pipes extending downward from lower ends of the plurality of exhaust pipes.

[0013] In another preferred embodiment of the present invention, the substrate processing apparatus further comprises a plurality of pressure regulating units respectively arranged in the plurality of exhaust pipes, each of the pressure regulating units comprising: a pressure sensor for measuring the pressure in the exhaust pipe; and a flow regulating mechanism for regulating the flow rate of the exhaust gas flowing in the exhaust pipe based on the measured value of the pressure sensor.

[0014] In another preferred embodiment of the present invention, each of the pressure regulating units is disposed in a region adjacent to an exhaust port of the processing unit.

[0015] In another preferred embodiment of the present invention, the substrate processing device further comprises a plurality of external gas inlet parts, which are respectively connected to the two or more collecting pipes and correspond to the plurality of flow path switching parts. The external gas inlet parts corresponding to each flow path switching part introduce external gas into the collecting pipes other than the collecting pipe of the flow path selected as the exhaust by each flow path switching part.

[0016] In this case, each external gas introduction portion preferably includes a shutter that changes an opening area of ​​an external gas introduction port communicating with the two or more collecting pipes.

[0017] The above-mentioned object and other objects, features, aspects and advantages will become more apparent from the following detailed description of the present invention with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a figure which shows the external appearance of a substrate processing apparatus.

[0019] Figure 2 is a top view showing a substrate processing apparatus.

[0020] Figure 3 is a diagram showing a stacking unit.

[0021] Figure 4 It is a plan view showing the second exhaust path.

[0022] Figure 5 It is a diagram showing the internal structure of the flow path switching unit and the external gas introduction unit.

[0023] Figure 6 It is a diagram showing the internal structure near the lower end portion of the exhaust pipe.

[0024] Figure 7 It is a diagram showing a plurality of stacked units connected to a collection pipe group.

[0025] Figure 8 FIG. 2 is a diagram showing another arrangement of a plurality of collecting pipes. DETAILED DESCRIPTION

[0026] Figure 1 1 is a diagram showing the appearance of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-sheet type apparatus that processes substrates 9 one by one in a processing unit 31 described later. Figure 1, three directions orthogonal to each other are shown as the X direction, the Y direction, and the Z direction. Typically, the Z direction is the up-and-down direction (vertical direction), and the X direction and the Y direction are horizontal directions.

[0027] Figure 2 FIG. 2 is a top view showing the substrate processing apparatus 1 viewed from the (+Z) side toward the (-Z) direction. Figure 1 as well as Figure 2 As shown, the substrate processing apparatus 1 includes a control unit 10, a support frame 20, a container placement unit 21, an indexing robot 22, a central robot 23, a plurality of stacking units 3, and a plurality of manifold groups 6. The control unit 10 controls the entire substrate processing apparatus 1.

[0028] like Figure 2 As shown, the container loading section 21 is provided at the end of the (-Y) side of the substrate processing device 1, and has a plurality of container loading tables 211. The plurality of container loading tables 211 extend in the X direction. A storage container C for storing a plurality of substrates 9 is placed on each container loading table 211. The storage container C is a carrier for storing a plurality of substrates 9 in multiple layers. The indexing plate robot 22 is arranged near the container loading section 21. The indexing plate robot 22 carries out unprocessed substrates 9 from the storage container C, and carries out processed substrates 9 into the storage container C. In addition, the indexing plate robot 22 transfers substrates 9 with the central robot 23. The central robot 23 is arranged on the (+Y) side of the indexing plate robot 22, approximately in the center in the X direction. The central robot 23 carries the unprocessed substrates 9 received from the indexing plate robot 22 into the processing section 31 described later. Furthermore, the central robot 23 carries out the processed substrate 9 from the processing unit 31 and delivers the substrate 9 to the index table robot 22 .

[0029] A plurality of stacking units 3 are arranged around the central robot 23. Figure 2 In the example, on the (+X) side of the central robot 23, two stacking units 3 are arranged along the Y direction, and on the (-X) side of the central robot 23, two stacking units 3 are arranged along the Y direction. Figure 1 As shown, each stacking unit 3 includes a plurality of processing units 31. The plurality of processing units 31 are arranged in the vertical direction. In this embodiment, each stacking unit 3 has three processing units 31. The number of processing units 31 in each stacking unit 3 can be two or more than four. The support frame 20 is a support body that is the main component of the substrate processing device 1. Figure 1 In FIG. 1 , a portion of the support frame 20 is indicated by a thick dotted line. The processing units 31 of the plurality of stacking units 3 are mounted on the support frame 20 by bolts or the like, and are supported by the support frame 20 .

[0030] exist Figure 1 as well as Figure 2In the figure, the outer shape of the processing chamber in each processing unit 31 is shown by a dotted rectangle. In the processing unit 31, a substrate holding unit, a nozzle unit, etc. are provided inside the processing chamber. In the processing unit 31, a variety of processing fluids can be supplied to the substrate 9 held by the substrate holding unit via the nozzle unit. In the case where the processing fluid is a liquid, for example, a substrate rotating unit that rotates the substrate holding unit and a cup unit surrounding the substrate holding unit are also provided, and the processing fluid supplied to the rotating substrate 9 is received and recovered by the cup unit. In addition, a fan filter unit (FFU) is provided above the processing chamber, and an airflow toward the bottom is formed in the processing chamber. The processing fluid used in the processing unit 31 is classified into a plurality of fluid categories. In the present embodiment, the plurality of fluid categories include an acidic solution, an alkaline solution, and an organic solvent. The processing fluid may also be a gas.

[0031] Acidic liquids include, for example, DHF (dilute hydrofluoric acid), SC2 (perhydrochloric acid), BHF (Buffered HF), sulfuric acid, SPM (hydrogen peroxide solution), fluoronitric acid (a mixture of hydrofluoric acid and nitric acid), etc. Alkaline liquids include, for example, SC1 (ammonia peroxide solution), ammonia water, ammonium fluoride solution, TMAH (tetramethylammonium hydroxide), etc. Organic solvents include IPA (isopropyl alcohol), methanol, ethanol, HFE (hydrofluoroether), acetone, etc. The organic solvent may be a mixed solution, for example, a mixed solution of IPA and acetone, a mixed solution of IPA and methanol, etc.

[0032] like Figure 2 As shown, in the substrate processing apparatus 1, an acidic solution supply unit 81, an alkaline solution supply unit 82, and an organic solvent supply unit 83 are further provided. The acidic solution supply unit 81, the alkaline solution supply unit 82, and the organic solvent supply unit 83 are arranged on the (+Y) side of the plurality of stacking units 3. The acidic solution supply unit 81 stores an acidic solution and supplies the acidic solution to the nozzle portion of the processing unit 31. The alkaline solution supply unit 82 stores an alkaline solution and supplies the alkaline solution to the nozzle portion of the processing unit 31. The organic solvent supply unit 83 stores an organic solvent and supplies the organic solvent to the nozzle portion of the processing unit 31.

[0033] A plurality of manifold groups 6 are disposed above a plurality of stacked units 3. Figure 1 As shown, each of the manifold groups 6 includes a plurality of manifolds 61a, 61b, and 61c. The plurality of manifolds 61a to 61c included in each manifold group 6 are stacked in the vertical direction and are arranged in a direction substantially perpendicular to the vertical direction ( Figure 1 In the present embodiment, the cross-sectional shape of the collecting tubes 61a to 61c perpendicular to the long side direction is a rectangle (see the later described section). Figure 3The cross-sectional shape of the collecting pipes 61a to 61c may be other shapes. The plurality of collecting pipes 61a to 61c are fixed to the support frame 20 via a member (not shown).

[0034] exist Figure 1 as well as Figure 2 In the example, two manifold groups 6 are provided, and each manifold group 6 includes three manifolds 61a to 61c. In addition, each manifold group 6 is arranged above two stacked units 3 arranged in the longitudinal direction, and each processing unit 31 included in the two stacked units 3 is connected to the three manifolds 61a to 61c of the manifold group 6 via the exhaust pipe 4 described later. The three manifolds 61a to 61c of the manifold group 6 overlap with the multiple processing units 31 included in the two stacked units 3 in the vertical direction. That is, as Figure 2 As shown in FIG. 1 , when the substrate processing apparatus 1 is viewed from above, the three manifolds 61a to 61c overlap with the plurality of processing sections 31. In the substrate processing apparatus 1, a fan filter unit (FFU) is provided above the central robot 23, but in the vertical direction, the plurality of manifolds 61a to 61c overlap with the plurality of processing sections 31, thereby preventing the introduction of air in the fan filter unit from being blocked by the manifolds 61a to 61c.

[0035] The plurality of manifolds 61a to 61c included in each manifold group 6 correspond to the plurality of fluid types described above. In the present embodiment, the uppermost manifold 61a of the plurality of manifolds 61a to 61c stacked in the vertical direction corresponds to the acidic liquid. That is, when the acidic liquid is used in the processing section 31, the uppermost manifold 61a is used as the discharge line of the gas (hereinafter referred to as "acidic exhaust") discharged from the processing section 31. The acidic exhaust includes, for example, gas and mist generated from the acidic liquid. Similarly, when the alkaline liquid is used in the processing section 31, the lowermost manifold 61c is used as the discharge line of the gas (hereinafter referred to as "alkaline exhaust") discharged from the processing section 31. The alkaline exhaust includes, for example, gas and mist generated from the alkaline liquid. In addition, when the organic solvent is used in the processing section 31, the central manifold 61b is used as the discharge line of the gas (hereinafter referred to as "organic exhaust") discharged from the processing section 31. The organic exhaust gas includes, for example, gas generated from an organic solvent and mist.

[0036] like Figure 2As shown, the ends of the (+Y) sides of the multiple collecting pipes 61a to 61c are connected to the exhaust unit 62. In the exhaust unit 62, multiple exhaust paths extending in the up-down direction are provided, and the multiple collecting pipes 61a to 61c are respectively connected to the upper ends of the multiple exhaust paths. The lower end of each exhaust path is connected to the factory piping. The factory piping is decompressed to a substantially constant pressure. Acidic exhaust gas, alkaline exhaust gas and organic exhaust gas are introduced into individual exhaust treatment equipment via the factory piping and are appropriately treated. According to the configuration of the factory piping, each collecting pipe 61a to 61c can be connected to the factory piping via the exhaust path extending upward from the collecting pipes 61a to 61c.

[0037] Figure 3 A diagram showing a stacking unit 3 viewed from the (-Y) side toward the (+Y) direction is shown. Each stacking unit 3 is provided with a plurality of exhaust pipes 4, a plurality of flow path switching parts 5, and a plurality of external gas introduction parts 7 in addition to a plurality of processing parts 31. The plurality of exhaust pipes 4 are respectively connected to the plurality of processing parts 31. Each exhaust pipe 4 is a flow path for acidic exhaust gas, alkaline exhaust gas, and organic exhaust gas (hereinafter collectively referred to as "exhaust gas") discharged from the processing part 31 to flow in. In addition, the processing liquid (including acidic liquid, alkaline liquid, and organic solvent) used by the processing part 31 is discharged via a drainage line not shown in the figure.

[0038] like Figure 3 As shown in FIG. 1 , each exhaust pipe 4 includes a first exhaust path 41 and a second exhaust path 42. The first exhaust path 41 extends in the up-down direction, and the lower end 411 of the first exhaust path 41 is connected to the processing unit 31. The lower end 411 of the first exhaust path 41 is the lower end of the exhaust pipe 4, hereinafter referred to as the "lower end 411". A pressure regulating unit 46, etc., which will be described later, is provided near the lower end 411 of the exhaust pipe 4 (see FIG. 1 ). Figure 6 ). An upper end 412 of the first exhaust path 41 is located above the processing unit 31. The upper end 412 of the first exhaust path 41 is connected to the second exhaust path 42.

[0039] As described above, in each stacking unit 3, a plurality of processing units 31 are stacked in the up-down direction, and in a plurality of first exhaust paths 41 connected to the plurality of processing units 31, positions of lower end portions 411 in the up-down direction are different from one another. On the other hand, in the plurality of first exhaust paths 41, positions of upper ends 412 in the up-down direction are the same as one another. Therefore, the lengths of the plurality of first exhaust paths 41 are different from one another. Among the plurality of first exhaust paths 41, the length of the first exhaust path 41 connected to the processing unit 31 disposed at the lowermost side is the longest, and the length of the first exhaust path 41 connected to the processing unit 31 disposed at the uppermost side is the shortest. In a stacking unit 3 in which three processing units 31 are stacked in the up-down direction, Figure 3In the example, the length of the first exhaust path 41 connected to the processing unit 31 of the lower layer is longer than the first exhaust path 41 connected to the processing unit 31 of the middle layer, and the length of the first exhaust path 41 connected to the processing unit 31 of the middle layer is longer than the first exhaust path 41 connected to the processing unit 31 of the upper layer.

[0040] In addition, in each stacking unit 3, the relative position of the lower end portion 411 of the first exhaust path 41 with respect to the processing unit 31 is the same in the plurality of first exhaust paths 41. Specifically, the lower end portion 411 is installed at the end in the X direction in the side surface facing the Y direction in the processing unit 31. In addition, in the first exhaust path 41 connected to the processing unit 31 of the middle layer and the first exhaust path 41 connected to the processing unit 31 of the lower layer, a portion extending in a direction inclined with respect to the up-down direction is provided so that the upper ends 412 of the plurality of first exhaust paths 41 are close to each other and arranged in the X direction.

[0041] Figure 4 It is shown Figure 3 FIG. 4 is a top view of a plurality of second exhaust paths 42 in the stacking unit 3 on the (+X) side. Each second exhaust path 42 has a first connection end 421 and a second connection end 422. The first connection end 421 and the second connection end 422 are both ends of the second exhaust path 42.

[0042] The first connection ends 421 of the plurality of second exhaust paths 42 are arranged in the X direction, and the upper ends 412 of the plurality of first exhaust paths 41 are connected to the plurality of first connection ends 421, respectively. Figure 3 as well as Figure 4 As shown, the upper end 412 of the first exhaust path 41 connected to the processing unit 31 of the upper layer is connected to the first connection end 421 on the most (-X) side, and the first connection end 421 is connected to the processing unit 31 of the upper layer via the first exhaust path 41. In this way, the first connection end 421 on the most (-X) side and the second exhaust path 42 having the first connection end 421 correspond to the processing unit 31 of the upper layer. Similarly, the first connection end 421 adjacent to the first connection end 421 on the (+X) side is connected to the upper end 412 of the first exhaust path 41 connected to the processing unit 31 of the middle layer, and the first connection end 421 and the second exhaust path 42 having the first connection end 421 correspond to the processing unit 31 of the middle layer. In addition, the upper end 412 of the first exhaust path 41 connected to the processing unit 31 of the lower layer is connected to the first connecting end 421 on the most (+X) side, and the first connecting end 421 and the second exhaust path 42 having the first connecting end 421 correspond to the processing unit 31 of the lower layer.

[0043] The second connection ends 422 of the plurality of second exhaust paths 42 are arranged along the longitudinal direction (Y direction) of the collecting pipes 61a to 61c, and the plurality of flow path switching parts 5 are connected to the plurality of second connection ends 422, respectively. In the second exhaust path 42 whose first connection end 421 is arranged on the most (+X) side, that is, the second exhaust path 42 corresponding to the processing unit 31 of the lower layer, the path from the first connection end 421 to the second connection end 422 extends only in the X direction. In the other two second exhaust paths 42, that is, the second exhaust path 42 corresponding to the processing unit 31 of the middle layer and the second exhaust path 42 corresponding to the processing unit 31 of the upper layer, the path from the first connection end 421 to the second connection end 422 is an L-shaped path having a portion extending in the Y direction and a portion extending in the X direction. The lengths of the above paths in the plurality of second exhaust paths 42 are different from each other. Specifically, the length of the second exhaust path 42 corresponding to the upper processing unit 31 is longer than the second exhaust path 42 corresponding to the middle processing unit 31, and the length of the second exhaust path 42 corresponding to the middle processing unit 31 is longer than the second exhaust path 42 corresponding to the lower processing unit 31. Figure 4 The shape of the second exhaust path 42 is merely an example, and the second exhaust path 42 may have another shape having a portion extending from the upper end of the first exhaust path 41 in a direction substantially perpendicular to the up-down direction.

[0044] As described above, among the plurality of exhaust pipes 4 included in each stacking unit 3, the length of the first exhaust path 41 corresponding to the processing unit 31 of the upper layer among the plurality of first exhaust paths 41 is the smallest, and the length of the first exhaust path 41 corresponding to the processing unit 31 of the lower layer is the largest. In addition, the length of the second exhaust path 42 corresponding to the processing unit 31 of the upper layer among the plurality of second exhaust paths 42 is the largest, and the length of the second exhaust path 42 corresponding to the processing unit 31 of the lower layer is the smallest. Therefore, in each combination of two exhaust pipes 4 included in the plurality of exhaust pipes 4, the length of the first exhaust path 41 in one exhaust pipe 4 is longer than the first exhaust path 41 in the other exhaust pipe 4, and the length of the second exhaust path 42 in the one exhaust pipe 4 is shorter than the second exhaust path 42 in the other exhaust pipe 4. In addition, the above relationship in each combination of two exhaust pipes 4 may not be established depending on the design of the substrate processing apparatus 1.

[0045] Figure 5 Schematically shows the internal structure of the flow path switching unit 5 and the external gas introduction unit 7. Figure 5 , the pressure regulating unit 46 described later is also shown. As described above, the flow path switching unit 5 is attached to the second exhaust path 42 (see FIG. 1 ) which is the upper end of the exhaust pipe 4. Figure 4), and is connected to a processing unit 31 via an exhaust pipe 4. The flow path switching unit 5 includes a branch pipe 51 and a plurality of exhaust opening and closing valves 53a, 53b, and 53c. One end of the branch pipe 51 is connected to the exhaust pipe 4. The other end of the branch pipe 51 branches into a plurality of branch paths 52a, 52b, and 52c, and the plurality of branch paths 52a to 52c are respectively connected to a plurality of collection pipes 61a to 61c of the collection pipe group 6. In this way, the flow path switching unit 5 connects the upper end of the exhaust pipe 4 to the plurality of collection pipes 61a to 61c.

[0046] In the present embodiment, the branch passage 52a is connected to the manifold 61a for acidic exhaust, the branch passage 52b is connected to the manifold 61b for organic exhaust, and the branch passage 52c is connected to the manifold 61c for alkaline exhaust. A plurality of exhaust on-off valves 53a to 53c are provided inside the plurality of branch passages 52a to 52c, respectively. The exhaust on-off valves 53a to 53c are, for example, butterfly valves. The exhaust on-off valves 53a to 53c may also be other types of valves. Each exhaust on-off valve 53a to 53c is connected to an actuator (not shown) such as a cylinder or a motor, and the exhaust on-off valves 53a to 53c can be used to open and close the flow paths of the branch passages 52a to 52c.

[0047] The external gas inlet portion 7 is arranged at a position opposite to each flow path switching portion 5 across the collecting pipe group 6, and is connected to a plurality of collecting pipes 61a to 61c. The external gas inlet portion 7 has a branch pipe 71, a plurality of external gas on-off valves 73a, 73b, 73c, and a gate 79. One end of the branch pipe 71 is opened as an external gas inlet port 711. As described later, the external gas inlet port 711 is connected to the plurality of collecting pipes 61a to 61c via the branch pipe 71. A gate 79 is provided at the external gas inlet port 711. The gate 79 has, for example, two plate-like members 791, and the two plate-like members 791 can move along the opening surface of the external gas inlet port 711. In the gate 79, by changing the positions of the two plate-like members 791, the opening area of ​​the external gas inlet port 711 can be changed.

[0048] The other end of the branch pipe 71 branches into a plurality of branch passages 72a, 72b, and 72c, and the plurality of branch passages 72a to 72c are respectively connected to the plurality of manifolds 61a to 61c of the manifold group 6. That is, the branch passage 72a is connected to the manifold 61a for acidic exhaust gas, the branch passage 72b is connected to the manifold 61b for organic exhaust gas, and the branch passage 72c is connected to the manifold 61c for alkaline exhaust gas. A plurality of external gas on-off valves 73a to 73c are respectively provided inside the plurality of branch passages 72a to 72c. The external gas on-off valves 73a to 73c are, for example, butterfly valves. The external gas on-off valves 73a to 73c may also be other types of valves. Each of the external gas on-off valves 73a to 73c is connected to an actuator (not shown) such as a cylinder or a motor, and the flow paths of the branch passages 72a to 72c can be opened and closed by the external gas on-off valves 73a to 73c.

[0049] In the substrate processing apparatus 1, the flow path switching unit 5 and the external gas introduction unit 7 corresponding to the processing unit 31 are controlled by the control unit 10 according to the processing fluid used in each processing unit 31. Specifically, when an acidic chemical solution is used in the processing unit 31 connected to each flow path switching unit 5, the exhaust on-off valve 53a in the branch path 52a is opened, and the other exhaust on-off valves 53b and 53c are closed. As a result, the acidic exhaust gas from the processing unit 31 is introduced into the collection pipe 61a for acidic exhaust gas, and is not introduced into the other collection pipes 61b and 61c. At this time, the external gas on-off valve 73a in the branch path 72a of the external gas introduction unit 7 is closed, and the other external gas on-off valves 73b and 73c are opened. As a result, the external gas is introduced into the collection pipe 61b for organic exhaust gas and the collection pipe 61c for alkaline exhaust gas via the branch paths 72b and 72c.

[0050] In addition, when an organic solvent is used in the processing section 31, the exhaust on-off valve 53b in the branch path 52b is opened, and the other exhaust on-off valves 53a and 53c are closed. As a result, the organic exhaust gas from the processing section 31 is introduced into the manifold 61b for organic exhaust, and is not introduced into the other manifolds 61a and 61c. At this time, the external gas on-off valve 73b in the branch path 72b of the external gas introduction section 7 is closed, and the other external gas on-off valves 73a and 73c are opened. As a result, the external gas is introduced into the manifold 61a for acidic exhaust and the manifold 61c for alkaline exhaust via the branch paths 72a and 72c.

[0051] Furthermore, when alkaline liquid is used in the treatment section 31, the exhaust on-off valve 53c in the branch path 52c is opened, and the other exhaust on-off valves 53a, 53b are closed. Thus, the alkaline exhaust gas from the treatment section 31 is introduced into the manifold 61c for alkaline exhaust, and is not introduced into the other manifolds 61a, 61b. At this time, the external gas on-off valve 73c in the branch path 72c of the external gas introduction section 7 is closed, and the other external gas on-off valves 73a, 73b are opened. Thus, the external gas is introduced into the manifold 61a for acidic exhaust and the manifold 61b for organic exhaust via the branch paths 72a, 72b.

[0052] As described above, in each flow path switching section 5, the flow path of the exhaust gas flowing in the exhaust pipe 4 is switched between the plurality of manifolds 61a to 61c. In addition, in the external gas introduction section 7 corresponding to the flow path switching section 5, the external gas is introduced into the manifolds other than the manifold selected as the flow path of the exhaust gas by the flow path switching section 5. In each external gas introduction section 7, the opening area of ​​the external gas introduction port 711 is adjusted in advance using the gate 79 so that the introduction flow rate of the external gas into each manifold 61a to 61c is similar to the flow rate of the exhaust gas when the exhaust gas is introduced only into the manifold 61a to 61c. In this way, the flow rate of the gas flowing into each manifold 61a to 61c can be kept substantially constant at all times, and the pressure fluctuation in the manifold 61a to 61c can be suppressed.

[0053] Figure 6 3 is a diagram showing the internal structure near the lower end 411 of the exhaust pipe 4. In the processing chamber of the processing part 31, a long hole 311 extending in the up-down direction is formed on the surface facing the Y direction. A long hole 413 extending in the up-down direction is also formed in the lower end 411 of the exhaust pipe 4 extending in the up-down direction. The exhaust pipe 4 is installed on the processing part 31 in such a way that the long hole 311 of the processing part 31 overlaps with the long hole 413 of the exhaust pipe 4. In this way, by connecting the processing part 31 and the exhaust pipe 4 through the long holes 311 and 413, the flow path area in the connection part between the processing part 31 and the exhaust pipe 4 is increased, and the pressure loss can be reduced.

[0054] The substrate processing apparatus 1 further includes a plurality of pressure regulating units 46, a plurality of liquid ejecting units 47, and a plurality of liquid drain pipes 48. The pressure regulating units 46 and the liquid drain pipes 48 are arranged at the lower end 411 of each exhaust pipe 4, that is, in an area adjacent to the exhaust port (long hole 311) of the processing unit 31. The liquid ejecting unit 47 is arranged near the long hole 311 in each processing unit 31. The pressure regulating unit 46 includes a pressure sensor 461 and a flow regulating mechanism 462. The flow regulating mechanism 462 includes a damper 463 and an opening regulating unit 464. The damper 463 is arranged in the exhaust pipe 4 above the long hole 413. The opening regulating unit 464 includes, for example, a motor, and changes the opening of the damper 463. The pressure sensor 461 is arranged in the exhaust pipe 4 near the long hole 413 to measure the pressure in the exhaust pipe 4. The measured value of the pressure sensor 461 is input to the control unit 10. In the control unit 10, the opening degree of the damper 463 is adjusted by the opening degree adjustment unit 464 so that the measured value of the pressure sensor 461 becomes constant at a predetermined value. In this way, the flow rate of the exhaust gas flowing through the exhaust pipe 4 is adjusted by the flow rate adjustment mechanism 462 based on the measured value of the pressure sensor 461.

[0055] The drain pipe 48 extends downward from the lower end portion 411 of the exhaust pipe 4. The drain pipe 48 is connected to the drain treatment equipment via factory piping. As described above, the liquid ejection portion 47 is provided in the vicinity of the long and medium hole 311 in the treatment portion 31. The liquid ejection portion 47 is a nozzle portion that ejects a specified liquid into the exhaust pipe 4. In the present embodiment, pure water is ejected from the liquid ejection portion 47. Thus, while being generated from the liquid medicine, etc., tiny crystals and the like contained in the exhaust are captured by the ejected pure water and discharged together with the pure water to the drain treatment equipment via the drain pipe 48. In this way, the tiny crystals and the like contained in the exhaust are separated from the exhaust by the pure water from the liquid ejection portion 47. Liquids other than pure water may also be used in the liquid ejection portion 47.

[0056] Figure 7 Schematically shows a plurality of stacked units 3 connected to one manifold group 6. Figure 7 In FIG. 1 , a plurality of manifolds 61a to 61c of the manifold group 6 are shown by thick solid lines. Figure 1 as well as Figure 7 As shown, each processing unit 31 included in one stacking unit 3 is connected to a plurality of manifolds 61a to 61c via an exhaust pipe 4 and a flow path switching unit 5. In addition, other stacking units 3 are located in the long side direction (Y direction) of the manifolds 61a to 61c relative to the one stacking unit 3, and each processing unit 31 included in the other stacking unit 3 is connected to a plurality of manifolds 61a to 61c via an exhaust pipe 4 and a flow path switching unit 5. In this way, a plurality of stacking units 3 having the same configuration are connected to the plurality of manifolds 61a to 61c of each manifold group 6.

[0057] In this embodiment, the pressure regulating unit 63 having the same structure as the pressure regulating unit 46 provided in the exhaust pipe 4 is as follows. Figure 7 As shown, each of the manifolds 61a to 61c is provided. Thus, even if the pressure of the factory piping changes due to the influence of other devices connected to the factory piping, the pressure in the manifolds 61a to 61c (the pressure on the stacking unit 3 side compared to the pressure regulating section 63) reduced via the factory piping is suppressed from changing.

[0058] In addition, as described above, each flow path switching portion 5 is provided with an external gas introduction portion 7 (at Figure 7 (not shown in the figure), the external gas inlet section 7 is used to introduce external gas into the collection pipe of the flow path that is not selected as the exhaust by the flow path switching section 5. As a result, the flow rate of the gas flowing into each collection pipe 61a~61c can be kept basically constant, and the pressure in the collection pipe 61a~61c is suppressed from changing according to the content of the treatment in the multiple processing units 31 connected to the collection pipe 61a~61c. In addition, a pressure regulating section 46 is provided in each exhaust pipe 4. Therefore, combined with the suppression of the pressure change in the collection pipe 61a~61c, the pressure near the long hole 311 serving as the exhaust port of the processing unit 31 can be kept basically constant at all times. As a result, the pressure condition in each processing unit 31 is kept constant in terms of time, and the pressure condition between the multiple processing units 31 can also be set to be constant.

[0059] In addition, as in the device of JP Patent Publication No. 2016-72480 (the above-mentioned document 1), when the exhaust switching device for each processing unit is arranged in the secondary clean area, the length of the exhaust pipe continuous from the processing unit to the exhaust switching device becomes longer, and therefore, the pressure loss in the exhaust pipe becomes larger. In addition, the length and path of the multiple exhaust pipes sometimes differ due to the arrangement of the exhaust switching device, and the pressure conditions in the multiple processing units connected to the multiple exhaust pipes are deviated. In this case, the processing results in the multiple processing units are greatly different. It is possible to consider arranging the exhaust switching device on the side of the processing unit to shorten the exhaust pipe, but the overall occupied area of ​​the substrate processing device becomes larger. In addition, when the number of processing units is increased, the number of required exhaust switching devices also increases, and therefore, the overall occupied area of ​​the substrate processing device becomes further larger (the same is true when the exhaust switching device is arranged in the secondary clean area).

[0060] In contrast, in the substrate processing device 1, a plurality of collecting pipes 61a to 61c are arranged above the plurality of processing units 31 arranged in the vertical direction. In addition, the plurality of exhaust pipes 4 are installed in a manner that extends upward from the plurality of processing units 31. Moreover, a flow path switching unit 5 is provided at the upper end of each exhaust pipe 4, and the flow path of the exhaust gas flowing in the exhaust pipe 4 is switched between the plurality of collecting pipes 61a to 61c. In this way, by arranging the flow path switching unit 5 near the processing unit 31, the exhaust pipe 4 can be shortened and the pressure loss in the exhaust pipe 4 can be reduced compared to the case where the exhaust switching device is arranged in the secondary clean area. In addition, the conditional deviation of the pressure in the plurality of processing units 31 can be reduced, and the difference in the processing results in the plurality of processing units 31 can be suppressed.

[0061] In the substrate processing apparatus 1, by arranging a plurality of collecting pipes 61a to 61c and a plurality of flow path switching parts 5 at the upper part (top), the occupied area of ​​the substrate processing apparatus 1 can be reduced compared to the case where the exhaust switching device is arranged on the side of the processing unit. In addition, when the number of processing units is increased, the increase in the occupied area can also be suppressed. Moreover, it is easy to realize a design in which the collecting pipes 61a to 61c and the flow path switching parts 5 are not covered by other structures. In this case, the collection pipes 61a to 61c and the flow path switching parts 5 can also be easily maintained. Figure 1 In the substrate processing apparatus 1, the manifolds 61a to 61c are also fixed to the support frame 20 in the same manner as the processing unit 31, thereby realizing a structure in which the manifolds 61a to 61c, the flow path switching unit 5, and the processing unit 31 are integrally provided.

[0062] In each exhaust pipe 4, there are provided a first exhaust path 41 extending upward from the processing unit 31, and a second exhaust path 42 connected to the upper end of the first exhaust path 41. The second exhaust path 42 has a portion extending from the upper end of the first exhaust path 41 in a direction substantially perpendicular to the up-down direction, and is connected to the flow path switching unit 5. In each combination of two exhaust pipes 4 included in the plurality of exhaust pipes 4 of each stacking unit 3, the length of the first exhaust path 41 in one exhaust pipe 4 is longer than the first exhaust path 41 in the other exhaust pipe 4, and the length of the second exhaust path 42 in the one exhaust pipe 4 is shorter than the second exhaust path 42 in the other exhaust pipe 4. Thus, in the plurality of exhaust pipes 4 included in the same stacking unit 3, the difference in pressure loss can be reduced.

[0063] The substrate processing apparatus 1 is further provided with a liquid ejection unit 47 for ejecting a predetermined liquid into the exhaust pipe 4, and a liquid discharge pipe 48 extending downward from the lower end portion 411 of the exhaust pipe 4. Thus, minute crystals and the like contained in the exhaust gas are captured by the liquid ejected from the liquid ejection unit 47, and are discharged together with the liquid to the liquid discharge processing device through the liquid discharge pipe 48. Thus, the crystals and the like adhere to the inner surface of the exhaust pipe 4 and the like, and an increase in pressure loss can be suppressed.

[0064] Here, it is assumed that in the case where an exhaust pipe extending downward from the processing unit 31 is provided, the liquid ejected from the liquid ejection unit 47 moves downward in the exhaust pipe. In this case, a recovery tank for recovering the liquid is provided in the middle of the exhaust pipe. In this structure, the pressure near the exhaust port of the processing unit 31 will fluctuate due to the amount of liquid in the recovery tank. In contrast, in the substrate processing apparatus 1, by providing the exhaust pipe 4 extending upward from the processing unit 31, the pressure fluctuation caused by the amount of liquid in the recovery tank as in the above structure is prevented.

[0065] The above-described substrate processing apparatus 1 can be modified in various ways.

[0066] In the above embodiment, the plurality of collecting pipes 61a to 61c in each collecting pipe group 6 are arranged in the vertical direction. Figure 8 As shown, the plurality of collection tubes 61a to 61c may be arranged in a direction (X direction) perpendicular to the longitudinal direction and the vertical direction. In this case, the plurality of collection tubes 61a to 61c and the plurality of processing units 31 are overlapped in the vertical direction to prevent the central robot 23 (see Figure 2 ) is hindered from introducing air into the fan filter unit above the collecting ducts 61a to 61c.

[0067] In addition, only two collecting pipes may be provided in each collecting pipe group 6. In this case, in one example, one collecting pipe is used for acidic exhaust and the other collecting pipe is used for alkaline exhaust. In other examples, one collecting pipe is used for acidic exhaust and the other collecting pipe is used for organic exhaust. In addition, more than four collecting pipes may be provided in each collecting pipe group 6, in which case the plurality of processing fluids that can be supplied in the processing section 31 are divided into four or more fluid categories. As described above, it is sufficient to provide two or more collecting pipes corresponding to the two or more fluid categories divided into the plurality of processing fluids in the substrate processing device 1. In addition, the number of exhaust opening and closing valves of each flow path switching section 5 and the number of external gas opening and closing valves of each external gas inlet section 7 are the same as the above-mentioned two or more collecting pipes.

[0068] In the exhaust pipe 4 provided Figure 6The pressure regulating unit 46 of the exhaust pipe 4 is used to change the opening of the damper 463 to adjust the flow rate of the exhaust gas flowing in the exhaust pipe 4. However, for example, a blower may be used as a flow regulating mechanism to realize the pressure regulating unit 46. In this case, the flow rate of the exhaust gas flowing in the exhaust pipe 4 is adjusted by changing the rotation speed of the blower based on the measured value of the pressure sensor 461. Figure 7 ) can also use a blower.

[0069] exist Figure 5 In the external gas introduction part 7, a plurality of independent tubes may be provided instead of the plurality of branch paths 72a to 72c (branch tubes 71). In this case, a plurality of external gas introduction ports 711 may be provided at the ends of the plurality of tubes on the opposite side to the plurality of collecting tubes 61a to 61c, and a gate 79 may be installed at each external gas introduction port 711. Thus, the introduction flow rate of the external gas can be adjusted with high precision for each of the collecting tubes 61a to 61c.

[0070] The external gas introduction part 7 may be omitted in each stacking unit 3 according to the design of the substrate processing apparatus 1. The stacking unit 3 only needs to include at least a collection of a plurality of processing units 31, a plurality of exhaust pipes 4, and a plurality of flow path switching units 5.

[0071] The substrate processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or other substrates.

[0072] The configurations in the above-described embodiment and various modifications may be appropriately combined as long as they do not contradict each other.

[0073] The invention has been described and explained in detail above, but the above description is for illustrative purposes only and is not intended to limit the invention. Therefore, various modifications and aspects are possible without departing from the scope of the invention.

[0074] Description of Reference Numerals

[0075] 1Substrate processing device

[0076] 3-layer stacking unit

[0077] 4 Exhaust pipe

[0078] 5 Flow path switching unit

[0079] 7 External gas inlet

[0080] 9 substrates

[0081] 10. Control Unit

[0082] 20 Support frame

[0083] 31 Processing Department

[0084] 41 1st exhaust path

[0085] 42 Second exhaust path

[0086] 46 Pressure regulation unit

[0087] 47 Liquid ejection unit

[0088] 48 drain pipe

[0089] 53a~53c Exhaust opening and closing valve

[0090] 61a~61c manifold

[0091] 73a~73c External air on-off valve

[0092] 79 Gate

[0093] 311 (Slotted hole in the processing part)

[0094] 411 (Exhaust pipe) lower end

[0095] 412 Upper end (of first exhaust path)

[0096] 461 Pressure Sensor

[0097] 462 flow regulating mechanism

[0098] 711 External gas inlet port.

Claims

1. A substrate processing device, characterized in that: have: A plurality of processing units arranged in a vertical direction, each of which can supply a plurality of processing fluids to the substrate; a plurality of exhaust pipes extending upward from the plurality of processing units and into which the exhaust gases from the plurality of processing units flow respectively; Two or more collecting pipes are arranged above the plurality of treatment parts and correspond to two or more fluid categories obtained by classifying the plurality of treatment fluids; a plurality of flow path switching parts, each of which is provided at an upper end of an exhaust pipe and connects the upper end to the two or more collecting pipes to switch the flow path of the exhaust gas flowing in the exhaust pipe between the two or more collecting pipes; and a control unit configured to control the plurality of flow path switching units according to the processing fluids used in the plurality of processing units, Each exhaust pipe has: a first exhaust path extending upward from the processing unit; and A second exhaust path having a portion extending from an upper end of the first exhaust path toward a direction substantially perpendicular to the up-down direction and connected to the flow path switching portion, The upper ends of the plurality of first exhaust paths in the plurality of exhaust pipes are arranged close to each other, and the lengths of the plurality of first exhaust paths are different from each other. The lengths of the plurality of second exhaust paths in the plurality of exhaust pipes are different from each other. In each combination of two exhaust pipes included in the multiple exhaust pipes, the length of the first exhaust path in one exhaust pipe is longer than the first exhaust path in the other exhaust pipe, and the length of the second exhaust path in the one exhaust pipe is shorter than the second exhaust path in the other exhaust pipe.

2. The substrate processing device according to claim 1, characterized in that: The two or more collecting pipes overlap with the plurality of processing parts in the up-down direction.

3. The substrate processing device according to claim 1, characterized in that: further comprising a support frame supporting the plurality of processing units, The two or more collecting pipes are fixed relative to the supporting frame.

4. The substrate processing device according to claim 1, characterized in that: The two or more collecting pipes extend along a long side direction substantially perpendicular to the up-down direction. The plurality of processing units, the plurality of exhaust pipes, and the plurality of flow path switching units are collectively constituted as a stacking unit, and the substrate processing apparatus further includes another stacking unit having the same structure as the stacking unit and located in the long side direction relative to the stacking unit.

5. The substrate processing apparatus according to claim 1, wherein: Each processing unit is connected to an exhaust pipe extending in the up-down direction via a long hole extending in the up-down direction.

6. The substrate processing apparatus according to claim 1, wherein: Also available: a plurality of liquid ejecting parts for ejecting a predetermined liquid into the plurality of exhaust pipes respectively; and A plurality of drain pipes extend downward from lower ends of the plurality of exhaust pipes.

7. The substrate processing apparatus according to claim 1, wherein: It also includes a plurality of pressure regulating units respectively provided in the plurality of exhaust pipes, Each pressure regulating unit has: A pressure sensor for measuring the pressure in the exhaust pipe; and A flow rate adjustment mechanism adjusts a flow rate of the exhaust gas flowing in the exhaust pipe based on a measurement value of the pressure sensor.

8. The substrate processing device according to claim 7, characterized in that: The pressure regulating units are arranged in a region adjacent to an exhaust port of the processing unit.

9. The substrate processing apparatus according to any one of claims 1 to 8, characterized in that: It also includes a plurality of external gas introduction parts, which are respectively connected to the two or more collecting pipes and correspond to the plurality of flow path switching parts. The external air introduction section corresponding to each flow path switching section introduces external air into the manifolds other than the manifold selected as the flow path of the exhaust gas by the respective flow path switching sections.

10. The substrate processing apparatus according to claim 9, wherein: Each external gas introduction portion has a shutter that changes an opening area of ​​an external gas introduction port communicating with the two or more collecting pipes.

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