Image pickup device and method for manufacturing the same

Abstract

The present invention relates to an image pickup device and a method of manufacturing the image pickup device. The image pickup device has a pixel region in which pixels are arranged and a multilayer wiring structure is provided therein. Each pixel includes a photoelectric conversion unit, a charge storage unit, a floating diffusion, a light-shielding portion that covers the charge storage unit and has an opening above the photoelectric conversion unit, and a waveguide that forms an opening at least partially overlapping the light-shielding portion in a plan view. The device includes an insulating film provided under the optical waveguide. The insulating film has a refractive index higher than that of the interlayer insulating film. The insulating film is provided closer to the photoelectric conversion unit than the lowermost wiring layer in the wiring layers of the multilayer wiring structure. The insulating film extends to a portion above the light-shielding portion. The insulating film is wider than the lower portion of the optical waveguide.

Description

[0001] This application is a divisional application of a patent application for invention, with the application number 201610805483.1, the filing date September 6, 2016, and the invention title "Image pickup device and manufacturing method thereof". Technical Field

[0002] Aspects of the present invention generally relate to an image pickup device, and more particularly, to a configuration including an optical waveguide on a photoelectric conversion unit. Background Art

[0003] There has been proposed a CMOS sensor in which a pixel includes an optical waveguide for guiding light to a photoelectric conversion unit and a charge storage unit for storing signal charges generated by the photoelectric conversion unit (for example, see Japanese Patent Laid-Open No. 2013-168546). In the image pickup device disclosed in Japanese Patent Laid-Open No. 2013-168546, the charge storage unit is covered with a light-shielding portion (metal light-shielding film) provided via an insulating film on the charge storage unit. The lower surface of the light-shielding portion, the lower surface of the optical waveguide, and the upper surface of the insulating film provided on the charge storage unit are flush with each other. An antireflection film is provided on the upper surface of the light-shielding portion.

[0004] The technology disclosed in Japanese Patent Laid-Open No. 2013-168546 has the following two problems.

[0005] The first problem is that in the configuration disclosed in Japanese Patent Laid-Open No. 2013-168546, light incident on the optical waveguide can be incident on the charge storage unit via the insulating film under the light-shielding portion. The light incident on the charge storage unit may cause noise to the signal in the previous storage period in the charge storage unit.

[0006] The second problem relates to the manufacturing method of the image pickup device disclosed in Japanese Patent Laid-Open No. 2013-168546. In Japanese Patent Laid-Open No. 2013-168546, an interlayer insulating film is etched to form an opening, and a core material that becomes an optical waveguide is formed in the opening. By using the light-shielding portion as an etching stop film, the interlayer insulating film and the antireflection film are etched to form an opening, and further, the opening is formed by self-alignment with respect to the opening of the interlayer insulating film and the antireflection film. Summary of the Invention

[0007] In this manufacturing method, the photoelectric conversion unit is easily damaged and the noise increases. Aspects of the present invention provide a low-noise imaging phase value.

[0008] According to one aspect of the present invention, there is provided an image pickup device having a pixel region in which a plurality of pixels are arranged, and a multilayer wiring structure is provided in the pixel region. Each of the pixels includes: a photoelectric conversion unit; a charge storage unit configured to store signal charges transferred from the photoelectric conversion unit; a floating diffusion to which the signal charges of the charge storage unit are transferred; a light-shielding portion configured to cover the charge storage unit and open above the photoelectric conversion unit; and an optical waveguide provided above the photoelectric conversion unit. The device includes an insulating film provided under the optical waveguide, wherein the insulating film has a refractive index larger than that of the interlayer insulating film of the multilayer wiring structure, and at a portion closer to the photoelectric conversion unit than the lowermost wiring layer in the wiring layers of the multilayer wiring structure, the insulating film extends from under the optical waveguide to a portion above the light-shielding portion, and in a plan view, the area of the insulating film is larger than the area of the exit surface of the optical waveguide.

[0009] Other features of aspects of the present invention will become apparent from the following description of exemplary embodiments with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a plan view of a pixel.

[0011] Figure 2 is a cross-sectional view of Example 1 of the present invention.

[0012] Figure 3A and Figure 3B is a plan view of a pixel of another example.

[0013] Figures 4A to 4C is a cross-sectional view of the manufacturing method of Example 2.

[0014] Figure 5A and Figure 5B is a cross-sectional view of the manufacturing method of Example 2.

[0015] Figure 6A and Figure 6B is a cross-sectional view of the manufacturing method of Example 2.

[0016] Figure 7 is a cross-sectional view of the image pickup device of Example 3.

[0017] Figure 8 is a cross-sectional view of the image pickup device of Example 4.

[0018] Figure 9 is a cross-sectional view of the image pickup device of Example 5.

[0019] Figure 10 is a cross-sectional view of the image pickup device of Example 6.

[0020] Figure 11 is an equivalent circuit diagram of a pixel. Detailed implementation manners

[0021] Embodiments of the present invention will be described in detail with reference to examples. It is desired that the embodiments of the present invention be applicable to a CMOS sensor. It is also desired that the embodiments of the present invention be applicable to an image pickup device provided with a multilayer wiring structure in a pixel region where a plurality of pixels are arranged. Figure 11 is an equivalent circuit diagram of a pixel of an image pickup device according to an embodiment of the present invention.

[0022] The pixel includes a photoelectric conversion unit 102, a charge storage unit 105, a floating diffusion unit (FD unit) 3, a signal line 8, and an overflow drain unit (OFD unit) 15. The pixel further includes a first transfer transistor 4, a second transfer transistor 5, a selection transistor 7, a reset transistor 9, a source follower transistor 10, and an OFD transistor 16 for switching between connection / disconnection or signal amplification among the photoelectric conversion unit 102, the charge storage unit 105, the FD unit 3, the signal line 8, and the OFD unit 15. Each transistor is formed of, for example, a MOSFET and includes a gate electrode provided as a control electrode between a drain and a source.

[0023] The photoelectric conversion unit 102 is an element that generates signal charges according to the amount of incident light. A photodiode can be used as the photoelectric conversion unit 102. The charge storage unit 105 is connected to the photoelectric conversion unit 102 via the first transfer transistor 4. The charge storage unit 105 serves as a ground capacitance and temporarily stores the charges transferred from the photoelectric conversion unit 102.

[0024] The FD unit 3 converts the charges transferred from the charge storage unit 105 into a voltage signal. The FD unit 3 includes a semiconductor region provided in a semiconductor substrate described later, and the FD capacitance designates the capacitance of the parasitic capacitance generated in the node. The FD unit 3 is connected to the charge storage unit 105 via the second transfer transistor 5. The FD unit 3 is also connected to the source terminal of the reset transistor 9 and the gate terminal of the source follower transistor 10. A power supply voltage is supplied to the drain terminal of the reset transistor 9. When the reset transistor 9 is turned on, the voltage of the FD unit 3 is reset to the power supply voltage. At this time, the reset signal voltage is output to the source terminal of the source follower transistor 10.

[0025] When the second transfer transistor 5 is turned on and charges are transferred from the charge storage unit 105 to the FD, a pixel signal voltage corresponding to the amount of charge transfer is output to the source terminal of the source follower transistor 10.

[0026] The source terminal of the source follower transistor 10 is connected to the drain terminal of the selection transistor 7. The source terminal of the selection transistor 7 is connected to the vertical output line 8. When the selection transistor 7 is turned on, a reset signal or a pixel signal is output to the vertical output line 8. Thus, a signal is read out from the pixel.

[0027] The OFD unit 15 is further connected to the photoelectric conversion unit 102 via the OFD transistor 16. When the OFD transistor 16 is turned on, the charge accumulated in the photoelectric conversion unit 102 is discharged to the OFD unit 15. In all pixels, the charge is simultaneously discharged to the OFD unit 15, and then, the accumulated charge is transferred to the charge accumulation unit 105. In this way, an electronic shutter that sets the same and constant exposure time for all pixels is realized. The electronic shutter reduces the time lag in the exposure timing caused by sequentially reading the charge from each pixel, thereby avoiding image distortion.

[0028] Figure 11 The equivalent circuit diagram shown applies to all of the following examples.

[0029] Example 1

[0030] Figure 1 is a plan view of the pixel of Example 1. Throughout the drawings referred to in the following examples and Figure 11 , the same components are denoted by the same reference numerals.

[0031] The gate electrode 104 of the first transfer transistor 4 is provided between the photoelectric conversion unit 102 and the charge accumulation unit 105. The gate electrode 106 of the second transfer transistor 5 is provided between the charge accumulation unit 105 and the FD 111.

[0032] The gate electrode 107 of the reset transistor 9 is provided adjacent to the FD 111. The drain region of the reset transistor 9 is provided on the opposite side of the FD 111 via the gate electrode 107. The drain region of the reset transistor 9 is common with the drain region of the source follower transistor 10. The gate electrode 108 of the source follower transistor 10 is provided adjacent to the drain region. The source region of the source follower transistor 10 is provided on the opposite side of the drain region of the source follower transistor 10 via the gate electrode 108. In Figure 1 the selection transistor 7 is not shown. The selection transistor 7 can be provided, for example, on the opposite side of the reset transistor 9 via the source follower transistor 10.

[0033] The gate electrode 101 of the OFD transistor 16 is provided adjacent to the photoelectric conversion unit 102. The gate electrode 101 is provided on a different part on one side of the gate electrode 104 where the photoelectric conversion unit 102 is provided. The semiconductor region forming a part of the OFD unit 15 is provided on the opposite side of the photoelectric conversion unit 102 via the gate electrode 101. The semiconductor region becomes the drain region of the OFD transistor 16.

[0034] The optical waveguide 103 is provided above the photoelectric conversion unit 102 to at least partially overlap the photoelectric conversion unit 102. Although the entire optical waveguide 103 is included in the photoelectric conversion unit 102 in the plan view in Figure 1 , it is only necessary that at least a part of the optical waveguide 103 overlaps the photoelectric conversion unit 102.

[0035] The light-shielding portion 109 covers the charge storage unit 105 and forms an opening above the photoelectric conversion unit 102. The insulating film 110 is provided to cover the entire photoelectric conversion unit 102, a part of the charge storage unit 105, and a part of the gate electrodes 101 and 104. The insulating film 110 will be described later. The element isolation region formed of an insulating material is provided at a portion other than the portion shown by the solid line. A part of the insulating film 110 overlaps the element isolation region.

[0036] Figure 2 is a cross-sectional view taken along the line II-II of Figure 1 . In Figure 2 , the photoelectric conversion unit 102 in the semiconductor substrate 200 is, for example, an n-type semiconductor region on which a p-type semiconductor region 205 is provided. Thus, an embedded-type photodiode structure is provided. With this configuration, the noise generated at the interface between the semiconductor substrate 200 and the insulating film 110 provided on the semiconductor substrate 200 can be reduced. The charge storage unit 105 is, for example, an n-type semiconductor region, and a p-type semiconductor region 206 is provided above the charge storage unit 105. Thus, an embedded-type structure is provided. This structure can reduce noise.

[0037] An antireflection film 211 is provided above the photoelectric conversion unit 102. A film having a refractive index between the refractive index of the interlayer insulating film 214 and the refractive index of the semiconductor substrate 200 can be used as the antireflection film 211. A silicon nitride film (SiN) having a refractive index of about 2.0 is used as the antireflection film 211.

[0038] The light-shielding portion 109 is provided to overlap a part of the photoelectric conversion unit 102 in the plan view, and an opening is formed at a portion overlapping another part of the photoelectric conversion unit 102 in the plan view. The light-shielding portion 109 is provided to cover at least a part of the charge storage unit 105 and the gate electrode 104 of the transistor that transfers charges from the photoelectric conversion unit 102 to the charge storage unit 105. The portion of the light-shielding portion 109 overlapping the photoelectric conversion unit 102 includes a portion extending from a portion above the gate electrode 104 and a portion extending from a portion above the gate electrode 101. The light-shielding portion 109 reduces the light incident on the charge storage unit 105, and reduces the charge generation and the occurrence of noise in the charge storage unit 105 due to the incident light.

[0039] It is desirable that the light-shielding portion 109 is formed of a material that hardly transmits visible light. For example, tungsten, tungsten silicide, tungsten oxide film, aluminum, or an alloy film thereof is used. The desired film thickness d of the light-shielding portion 109 is, for example, 100 ≤ d ≤ 200 nm. Since the light-shielding portion 109 is formed on the gate electrode and other portions simultaneously, the light-shielding portion 109 has non-uniformity caused by the film thickness of the gate electrode.

[0040] The wires 216a to 216c, the contacts 215, and the vias 219 and 223 are provided on the semiconductor substrate 200. Although three wiring layers are shown in Figure 2 , more or fewer wiring layers may be provided. Although multiple wiring layers, interlayer insulating films, and diffusion prevention films are formed here, if there is no need to distinguish them, these layers and films will be described uniformly without adding letters to the reference numerals. In particular, when the wire 216 is mainly formed of Cu, the diffusion prevention film 217 is used.

[0041] The wires constituting each wire 216 may be formed of copper, aluminum, or an alloy film thereof. The wire 216 and the light-shielding portion 109 can be connected to each other through the contact 215 to apply a voltage to the light-shielding portion 109. Alternatively, a contact (not shown) may be formed between the light-shielding portion 109 and the semiconductor substrate 200.

[0042] Diffusion prevention films 217a to 217c formed of a wiring material may be provided on the wires 216a to 216c. The diffusion prevention films 217a to 217c may be formed of, for example, a silicon nitride film (SiN) and silicon carbide (SiC).

[0043] Each pixel further includes an optical waveguide 103 and an interlayer lens 232 as an optical system provided directly above the photoelectric conversion unit 102. Although the optical waveguide 103 is circular in the plan view, the optical waveguide 103 may be square, rectangular, elliptical, polygonal, etc. A color filter and a microlens (not shown) may be provided above the interlayer lens 232.

[0044] The optical waveguide 103 has a function of converging incident light on the photoelectric conversion unit 102. Since the amount of light incident on the photoelectric conversion unit 102 is increased by the optical waveguide 103, the sensitivity is improved as compared with the case where the optical waveguide 103 is not provided. In particular, when the area of the photoelectric conversion unit 102 is small or when the F-number of the lens of the camera is large when the image pickup device is used in a camera, the sensitivity is reduced. By providing the optical waveguide 103, such an influence can be reduced.

[0045] The interlayer insulating films 214a to 214c are provided between the wirings 216. It is desirable that the interlayer insulating film 214 be formed of a material having a refractive index lower than that of the material constituting the optical waveguide 103. For example, the interlayer insulating film 214 can be formed of a silicon oxide film (SiO) having a refractive index of about 1.5, and the optical waveguide 103 can be formed of a silicon oxynitride film (SiON) having a refractive index of about 1.8. Light obliquely incident on each interface between the optical waveguide 103 and each of the insulating films 214a to 214c at a predetermined angle is totally reflected at each of the interfaces. Therefore, the leakage of light incident on the optical waveguide 103 into the interlayer insulating film 214 is reduced, and a larger amount of incident light reaches the photoelectric conversion unit 102. The materials of the interlayer insulating film 214 and the optical waveguide 103 are not limited to the combination of the silicon oxide film and the silicon oxynitride film. Any materials can be used in combination so that the refractive index of the optical waveguide 103 becomes higher than the refractive index of the interlayer insulating film 214. For example, the interlayer insulating film 214 can be a silicon oxide film and the optical waveguide 103 can be a silicon nitride film (SiN) having a refractive index of about 2.0. An organic film material and a material in which titanium oxide fine particles are mixed in the organic film material can be used. The interlayer insulating films 214a to 214c can be a laminated film of different materials. In this case, the refractive index of the optical waveguide 103 is set to be higher than the refractive index of the interlayer insulating films 214a to 214c around the optical waveguide 103. The optical waveguide 103 has a tapered shape in which the incident surface area is larger than the exit surface area. Therefore, a larger amount of incident light can be converged on the photoelectric conversion unit 102 via the optical waveguide 103.

[0046] An antireflection film 228, an interlayer insulating film 229, and an antireflection film 230 are provided between the optical waveguide 103 and the interlayer lens 232. As the antireflection films 228 and 230, for example, a silicon oxynitride film (SiON) having a refractive index of about 1.6 can be used, and as the interlayer insulating film 229, a silicon oxide film (SiO) having a refractive index of about 1.5 can be used. The interlayer insulating film 229 can be used as an interlayer insulating film in the peripheral circuit region.

[0047] An antireflection film 231 can be further formed on the interlayer lens 232. This antireflection structure can increase the transmittance of incident light, thereby increasing the sensitivity.

[0048] In Example 1, a multilayer wiring structure including a wire 216 and an interlayer insulating film 214 is provided on a semiconductor substrate 200 in a pixel region. It is desired to form an optical waveguide 103 by embedding the above-described high refractive index member in an opening formed through each of the insulating films 214 of the multilayer wiring structure.

[0049] The insulating film 110 is provided to extend from below the optical waveguide 103 to a portion above the light shielding portion 109. The insulating film 110 contains a material having a refractive index higher than that of the interlayer insulating film 214. In particular, it is desired that the insulating film 110 has a refractive index higher than that of the portion of the interlayer insulating film 214 provided above the charge storage unit. This configuration prevents light leaking from the optical waveguide 103 from entering the charge storage unit 105. The reason therefor will be explained below.

[0050] Consider a case where the insulating film 110 does not extend to a portion above the light shielding portion 109, that is, a case where the end of the insulating film 110 faces the end of the light shielding portion 109 at substantially the same height in a cross-sectional view. A part of the light incident on the optical waveguide 103 propagates through the insulating film 110, and a part of the light leaks into the interlayer insulating film 214 above the charge holding portion at the end of the insulating film 110 and becomes stray light. The stray light enters the charge storage unit 105 through the insulating film between the light shielding portion 109 and the semiconductor substrate 200 and causes noise. If the insulating film 110 extends to a portion above the light shielding portion 109 as Figure 2 shown, then the light propagating from the optical waveguide 103 to the insulating film 110 reaches the portion above the light shielding portion 109 along the insulating film 110. In this case, the presence of the light shielding portion 109 prevents the light leaking from the end of the insulating film 110 from entering the charge storage unit 105. It is desired that the area of the insulating film 110 is larger than the area of the exit surface of the optical waveguide in a plan view.

[0051] Since the insulating film 110 extends to a portion above the light shielding portion 109, light leaking from the optical waveguide 103 into the interlayer insulating film 214 and light not incident on the upper opening of the optical waveguide 103 can be converged on the optical waveguide 103 by the insulating film 110 having a refractive index higher than that of the interlayer insulating film 214. And, in this case, since the stray light in the interlayer insulating film 214 is reduced, the light incident on the charge storage unit 105 can be reduced. The shape of the insulating film 110 in the plan view is not limited to Figure 1 the shape shown, and can be various shapes.

[0052] Figure 3A Shows a first another example of the shape of the insulating film 110 of Example 1. Figure 3A WithFigure 1 The difference is that the insulating film 110 covers the entire light-shielding portion 109. In Figure 1 , there are portions where the insulating film 110 and the light-shielding portion 109 are not stacked vertically above the charge storage unit 105, while the first another example has a stacked structure in which the insulating film 110 is located above the entire light-shielding portion 109. In the stacked film, since reflection of incident light from above generally occurs at the interface, the transmittance of incident light from above can be reduced. That is, in the first another example, compared with the example shown in Figure 2 , in the stray light incident on the interlayer insulating film 214 without entering the upper opening of the optical waveguide 103, the ratio of the stray light passing through the light-shielding portion 109 and reaching the charge storage unit 105 can be reduced. Although Figure 3A is a plan view of a unit pixel, the light-shielding portion 109 and the insulating film 110 can be connected to the light-shielding portions and insulating films of adjacent pixels.

[0053] Figure 3B A second another example of the insulating film 110 of Example 1 is shown. In Figure 3B , the second another example is different from Example 1 of Figure 1 and Figure 2 in that the insulating film 110 does not extend above the light-shielding portion 109 on the gate electrode 101 of the OFD transistor 16. If the contact plug 215 does not overlap the light-shielding portion 109 or the insulating film 110 in the plan view for manufacturing process reasons, then the second another example is suitable. And, in the second another example, since the insulating film 110 extends above the light-shielding portion 109 between the optical waveguide 103 and the charge storage unit 105, the shielding performance for the charge storage unit 105 can be improved by the above mechanism.

[0054] If the insulating film 110 extends above the light-shielding portion 109 at least in part of the pixel, desirably between the optical waveguide 103 and the charge storage unit 105, then the effects of Example 1 are provided. Considering the pixel layout, desired pixel characteristics, and manufacturing process, the portion where the insulating film 110 extends above the light-shielding portion 109 can be appropriately designed.

[0055] Example 2

[0056] Figures 4A to 4C , Figure 5A , Figure 5B , Figure 6A and Figure 6B are cross-sectional views showing a method of manufacturing the image pickup device of Example 2.

[0057] In Figure 4AIn this case, after preparing a semiconductor substrate, OFD units 201, photoelectric conversion units 102, charge storage units 105, FD 111, and gate electrodes 101, 104, 106, and 107 of respective transistors are formed.

[0058] Then, an antireflection film 211 is formed on the photoelectric conversion units 102, the gate electrodes of the respective transistors, and the source regions and drain regions of the respective transistors. A silicon nitride film can be used as the antireflection film 211. The antireflection film 211 can be used as a film (not shown) for forming side spacers of transistors provided in a peripheral circuit region outside the pixel region.

[0059] Then, as Figure 4B shown, an insulating film 301 is formed in the entire pixel region. On the insulating film 301, a shielding member that becomes a light-shielding portion 109 is formed to cover at least the photoelectric conversion units 102, the gate electrode 104, and the charge storage units 105. A portion of the shielding member that overlaps the photoelectric conversion units 102 in a plan view is removed, so that a light-shielding portion 109 that covers a part of the photoelectric conversion units 102 and the charge storage units 105 is formed. The insulating film 301 can be formed of a silicon oxide film. The shielding member can be removed by dry etching. It is desirable that the insulating film 301 partially remains in the opening of the light-shielding portion 109. This is because, if the insulating film 301 is completely removed, a part of the antireflection film 211 is also removed, whereby the antireflection effect is reduced and the sensitivity is decreased.

[0060] Then, as Figure 4C shown, an insulating film 302 is formed in the pixel region. Then, an insulating film 110 is formed in the opening of the light-shielding portion 109 on the photoelectric conversion units 102, on the gate electrode 104, and on at least a part of the charge storage units 105. The shape of the insulating film 110 in a plan view will be described later.

[0061] The patterning of the insulating film 110 can be performed by dry etching. In the region where the insulating film 110 is removed, it is desirable that the insulating film 302 partially remains. This is because, if the insulating film 302 is completely removed, a part of the light-shielding portion 109 is also removed in the region where the light-shielding portion 109 is provided under the insulating film 302.

[0062] Then, as Figure 5A shown, wirings 216a to 216c, contact plugs 215, via plugs 219a and 219b, interlayer insulating films 214a to 214d, and diffusion preventing films 217a to 217c are formed by a known method. Although in Figure 5AThree wiring layers are shown, but more or fewer wiring layers can be provided. Although multiple wiring layers, interlayer insulating films, and diffusion prevention films are formed here, if there is no need to distinguish them, these layers and films will be described collectively without adding letters to the reference numerals. When the wire 216 is mainly formed of Cu, the diffusion prevention film 217 is not required.

[0063] Then, as Figure 5B shown, an opening 218 is formed at a portion of the interlayer insulating film 214 and the diffusion prevention film 217 where an optical waveguide is to be formed. The opening is formed by, for example, dry etching. During the formation of the opening, the insulating film 110 serves as an etching stop film. Since the etching is blocked by the insulating film 110, the exposure of the photoelectric conversion unit 102 to etching damage is reduced and an increase in noise is avoided. It is not necessary to completely block the etching by the insulating film 110. It is only necessary that the material is less likely to be etched than the interlayer insulating film 214 under the etching conditions during the etching of the interlayer insulating film 214. If the interlayer insulating film 214 is formed of a silicon oxide film or a glass-based material mainly made of silicon oxide such as BPSG, PSG, and NSG, the insulating film 110 can be formed of a film including a silicon nitride film and a silicon carbide film.

[0064] Part or all of the insulating film 110 can be removed by further etching.

[0065] Then, as Figure 6A shown, a high refractive index material having a refractive index higher than that of the interlayer insulating film 214 is embedded in the opening 208 for planarization, and an optical waveguide 103 is formed. The high refractive index material can be embedded by, for example, high density plasma chemical vapor deposition or spin coating of an organic material. Planarization can be performed by, for example, chemical mechanical polishing (CMP) or back etching.

[0066] Then, as Figure 6B shown, an interlayer insulating film 229 and antireflection films 228 and 230 located on the upper and lower sides of the interlayer insulating film 229 are formed. A silicon oxide film can be used as the interlayer insulating film 229, and a silicon oxynitride film can be used as the antireflection film 228. Compared with a configuration in which the interlayer insulating film 229 is provided in contact with the component constituting the optical waveguide 103, the antireflection film 228 can increase the amount of light incident on the photoelectric conversion unit 102.

[0067] Compared with a configuration in which the interlayer lens 232 and the insulating film 229 described later are provided in contact with each other, the antireflection film 230 can increase the amount of light incident on the photoelectric conversion unit 102.

[0068] The interlayer lens 232 is formed above the antireflection film 230, and the antireflection film 231 is formed above the interlayer lens 232.

[0069] As described above, in the manufacturing method of Example 2, the insulating film 110 used as an etch stop film is formed to continuously extend from at least a part of the photoelectric conversion unit 102 to at least a part of the portion above the light-shielding portion in a plan view. This configuration prevents light leaking from the side surface of the insulating film 110 from entering the semiconductor substrate 200 below the light-shielding portion 109, and improves the shielding performance of the charge storage unit 105.

[0070] As another effect, during the formation of the opening 218 in the interlayer insulating film 214, the opening 218 can be formed wider on the charge storage unit 105 side. This is because, even if the opening 218 is set to overlap the light-shielding portion 109 in a plan view, the light-shielding portion 109 is protected by the insulating film 110 during the etching of the opening 218.

[0071] Example 3

[0072] Figure 7 is a cross-sectional view of the imaging device of Example 3. Components identical to those of Example 1 are denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0073] Example 3 is different from Examples 1 and 2 in the planar shape of the insulating film 110. In Example 3, the end of the optical waveguide 103 is located outside the opening portion of the light-shielding portion 109. In Example 3, since the optical waveguide 103 has an exit surface and an incident surface wider than those of Examples 1 and 2, more light can be converged on the photoelectric conversion unit 102.

[0074] And, in the Figure 7 configuration shown, since the insulating film 110 extends to the portion above the light-shielding portion 109, light leaking on the interlayer insulating film 214 and light that does not enter the incident surface of the optical waveguide 103 are converged on the optical waveguide 103 by the insulating film 110 having a refractive index higher than that of the interlayer insulating film 214. Therefore, stray light in the interlayer insulating film 214 is reduced and noise generated in the charge storage unit 105 is reduced.

[0075] Example 4

[0076] Figure 8 is a cross-sectional view showing Example 4. In Example 4, compared with Example 3, there is no p-type semiconductor region 205 above the charge storage unit 105, and the gate electrode 104 of the first transfer transistor extends to the portion above the charge storage unit 105.

[0077] In Example 4, in the charge storage unit 105, the noise generated near the surface of the semiconductor substrate 200 is reduced by utilizing the voltage applied to the gate electrode 104. Since the volume of the p-type semiconductor portion on the surface of the silicon substrate can be reduced compared to the case where the p-type semiconductor region 205 is formed by ion implantation, the number of electrons that can be stored in the charge storage unit 105 can be increased.

[0078] Example 5

[0079] Figure 9 FIG. is a cross-sectional view showing Example 5. Example 5 is different from Example 1 in that the opening region A4 above the optical waveguide 103 is larger than the opening regions A1, A2, and A3 of the wiring layer. In the example of the present invention, since the charge storage unit 105 exists in the semiconductor region 200 in addition to the photoelectric conversion unit 102, the area occupied by the photoelectric conversion unit 102 becomes relatively small. As in Example 5, by greatly increasing the upper opening of the optical waveguide 103, a larger amount of light can be made to enter the photoelectric conversion unit 102 with a relatively small area, thereby increasing the sensitivity.

[0080] Example 6

[0081] Figure 10 is a cross-sectional view showing Example 6. In Figure 10 , compared with Example 1, the antireflection film 211 forms an opening at the position where the contact 215 for the FD 111 and the gate electrode 107 of the source follower transistor is to be formed. And the insulating film 110 remains at the position where the contact 215 is to be formed. The insulating film 110 is made to serve as an etch stop film when the contact 215 is opened by dry etching.

[0082] The antireflection film 211 can reduce the diffusion of hydrogen in the semiconductor substrate 200 during the hydrogen sintering process, while in Example 6, the antireflection film 211 can diffuse a larger amount of hydrogen in the semiconductor substrate 200 through the opening of the antireflection film 211. This increases the effect of terminating the tangling bonds existing on the surface of the silicon substrate and further reduces the noise.

[0083] The position where the opening of the antireflection film 211 is formed is not limited to the position where the contact 215 for the FD 111 and the gate electrode 107 of the source follower transistor is to be formed. The opening of the antireflection film 211 can be formed at the position where other contacts (not shown) are to be formed. Regarding the contact for the gate electrode 107 of the FD 111 and the SF transistor, the antireflection film 211 can be left and used as an etch stop film.

[0084] Although the present invention has been described with reference to the examples, combinations and variations can be made without departing from the concept of the present invention.

[0085] Although the present invention has been described with reference to exemplary embodiments, it should be understood that the present invention is not limited to the disclosed exemplary embodiments. The scope of the appended claims should be given the broadest interpretation to encompass all such modifications and equivalent structures and functions.

Claims

1. An image pickup device, characterized in that, The image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate. Each of the plurality of pixels includes: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode provided between the photoelectric conversion unit and the drain unit, A second gate electrode provided between the photoelectric conversion unit and the charge storage unit, and A third gate electrode provided between the charge storage unit and the floating diffusion unit, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, and wherein the second gate electrode and the third gate electrode are arranged in this order along a third direction parallel to and opposite to the first direction, The image pickup device includes: An optical waveguide provided above the photoelectric conversion unit, and A light-shielding portion provided between the plurality of wiring layers and the semiconductor substrate, arranged above at least a part of the charge storage unit and at least a part of the second gate electrode, and An insulating film including a portion provided between the photoelectric conversion unit and the optical waveguide and extending above the light-shielding portion, wherein the refractive index of the insulating film is higher than the refractive index of the interlayer insulating film provided between the plurality of wiring layers.

2. The image pickup device according to claim 1, wherein, The light-shielding portion is provided above the first gate electrode and the third gate electrode.

3. The image pickup device according to claim 1, wherein, The insulating film extends from above the photoelectric conversion unit to above the charge storage unit.

4. The image pickup device according to claim 1, wherein, The insulating film extends above the first gate electrode.

5. The image pickup device according to claim 1, wherein, The insulating film extends above the third gate electrode.

6. The image pickup device according to claim 1, wherein, The charge storage unit, the third gate electrode, and the floating diffusion unit are arranged in this order along a fourth direction different from the second direction.

7. The image pickup device according to claim 6, further comprising a fourth gate electrode configured to reset the floating diffusion unit, Among them, wherein the floating diffusion unit and the fourth gate electrode are arranged along the fourth direction.

8. The image pickup device according to claim 7, further comprising a first contact plug provided between the third gate electrode and the fourth gate electrode and configured to be electrically connected to the floating diffusion unit, Among them, wherein the fourth gate electrode and the first contact plug are arranged along the fourth direction.

9. The image pickup device according to claim 8, further comprising a second contact plug configured to be electrically connected to the fourth gate electrode, Among them, wherein the first contact plug and the second contact plug are arranged along the fourth direction.

10. The image pickup device according to claim 7, further comprising a fifth gate electrode configured to be electrically connected to the floating diffusion unit, Among them, wherein the third gate electrode and the fifth gate electrode are arranged along the fourth direction.

11. The image pickup device according to claim 8 further includes a third contact plug configured to be electrically connected to a fifth gate electrode, Among them, wherein the fifth gate electrode and the third contact plug are arranged in a fourth direction.

12. The image pickup device according to claim 6, wherein the second direction is parallel to the fourth direction.

13. The image pickup device according to claim 1, wherein in a plan view, the insulating film and the light-shielding portion are provided in at least one of a portion between the first gate electrode and the second gate electrode and a portion between the second gate electrode and the third gate electrode.

14. The image pickup device according to claim 1, wherein, The optical waveguide is provided to be separated from an outer periphery of the light-shielding portion.

15. The image pickup device according to claim 1, wherein, In a plan view, the insulating film completely covers the charge storage unit.

16. The image pickup device according to claim 1, wherein, Each of the plurality of pixels includes an antireflection film located between the insulating film and the semiconductor substrate.

17. The image pickup device according to claim 1, wherein, The film thickness of the light-shielding portion is greater than or equal to 100 nm and less than or equal to 200 nm.

18. The image pickup device according to claim 17, wherein, The light-shielding portion contains tungsten.

19. The image pickup device according to claim 1, wherein, The light-shielding portion is electrically connected to a wiring included in the plurality of wiring layers or connected to a part of the semiconductor substrate.

20. The image pickup device according to claim 1, wherein, The second gate electrode extends over the charge storage unit.

21. The image pickup device according to claim 1, wherein the interlayer insulating film is mainly made of silicon oxide, and wherein the insulating film includes a silicon nitride film or a silicon carbide film.

22. The image pickup device according to claim 8, wherein, In a plan view, the insulating film and the light-shielding portion are provided in at least one of a portion between the first gate electrode and the second gate electrode and a portion between the second gate electrode and the third gate electrode.

23. The image pickup device according to claim 8, wherein, The optical waveguide is provided to be separated from an outer periphery of the light-shielding portion.

24. The image pickup device according to claim 8, wherein each of the plurality of pixels includes an antireflection film located between the insulating film and the semiconductor substrate.

25. The image pickup device according to claim 8, wherein, The film thickness of the light-shielding portion is greater than or equal to 100 nm and less than or equal to 200 nm.

26. The image pickup device according to claim 1, wherein, A longitudinal direction of the first gate electrode is orthogonal to a first direction, and a longitudinal direction of the second gate electrode is orthogonal to a second direction.

27. The image pickup device according to claim 1, wherein, A part of the optical waveguide extends over the charge storage unit and extends over the drain unit.

28. The image pickup device according to claim 1, wherein, The light-shielding portion extends over the third gate electrode.

29. The image pickup device according to claim 1 further includes, a lens provided over the optical waveguide, Among them, wherein in a cross-sectional view, a width of the lens is smaller than a width of the optical waveguide.

30. An image pickup device, characterized in that, The image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate. Each of the plurality of pixels includes: a photoelectric conversion unit, a charge storage unit, a floating diffusion unit, a drain unit, a first gate electrode provided between the photoelectric conversion unit and the drain unit, a second gate electrode provided between the photoelectric conversion unit and the charge storage unit, and a third gate electrode provided between the charge storage unit and the floating diffusion unit; an optical waveguide provided over the photoelectric conversion unit, A light-shielding portion, which is provided between the plurality of wiring layers and the semiconductor substrate, is disposed over at least a part of the charge storage unit and the second gate electrode, and an insulating film, which includes a portion provided between the photoelectric conversion unit and the optical waveguide and extending over the light-shielding portion, wherein the refractive index of the insulating film is higher than the refractive index of the interlayer insulating film provided between the plurality of wiring layers, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, and wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction.

31. The image pickup device according to claim 30, wherein, The charge storage unit, the third gate electrode, and the floating diffusion unit are arranged in this order along a fourth direction different from the second direction.

32. The image pickup device according to claim 30, wherein in a plan view, the insulating film and the light-shielding portion are provided in at least one of a portion between the first gate electrode and the second gate electrode and a portion between the second gate electrode and the third gate electrode.

33. The image pickup device according to claim 30, wherein, The optical waveguide is provided so as to be separated from the outer periphery of the light-shielding portion.

34. The image pickup device according to claim 30, wherein, In a plan view, the insulating film completely covers the charge storage unit.

35. The image pickup device according to claim 30, wherein, The light-shielding portion contains tungsten.

36. The image pickup device according to claim 30, wherein, The second gate electrode extends over the charge storage unit.

37. The image pickup device according to claim 30, wherein, The insulating film extends from over the photoelectric conversion unit to over the charge storage unit.

38. The image pickup device according to claim 30, wherein, The insulating film extends over the first gate electrode.

39. The image pickup device according to claim 30, wherein, The insulating film extends over the third gate electrode.

40. The image pickup device according to claim 30, wherein, The longitudinal direction of the first gate electrode is orthogonal to the first direction, and the longitudinal direction of the second gate electrode is orthogonal to the second direction.

41. The image pickup device according to claim 30, wherein, A part of the optical waveguide extends over the charge storage unit and over the drain unit.

42. The image pickup device according to claim 30, wherein, The light-shielding portion extends over the third gate electrode.

43. The image pickup device according to claim 30, further comprising a lens provided over the optical waveguide, Among them, wherein in a cross-sectional view, the width of the lens is smaller than the width of the optical waveguide.

44. An image pickup device, characterized in that, The image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate. Each of the plurality of pixels includes: a photoelectric conversion unit, a charge storage unit, a floating diffusion unit, a drain unit, a first gate electrode, which is provided between the photoelectric conversion unit and the drain unit, a second gate electrode, which is provided between the photoelectric conversion unit and the charge storage unit, a third gate electrode, which is provided between the charge storage unit and the floating diffusion unit; a fourth gate electrode of a source follower transistor; an optical waveguide, which is provided over the photoelectric conversion unit, and a light-shielding portion, which is provided between the plurality of wiring layers and the semiconductor substrate, is disposed over at least a part of the charge storage unit and the second gate electrode, and An insulating film, which includes a portion disposed between the photoelectric conversion unit and the optical waveguide and extending over the light-shielding portion, wherein the refractive index of the insulating film is higher than the refractive index of the interlayer insulating film disposed between the plurality of wiring layers, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein the longitudinal direction of the first gate electrode is orthogonal to the longitudinal direction of the second gate electrode, and, wherein the first gate electrode is disposed on a first side of the photoelectric conversion unit, and the fourth gate electrode is disposed on a second side of the photoelectric conversion unit opposite to the first side.

45. The image pickup device according to claim 44, wherein, The charge storage unit, the third gate electrode, and the floating diffusion unit are arranged in this order along a fourth direction different from the second direction.

46. The image pickup device according to claim 44, wherein in a plan view, the insulating film and the light-shielding portion are disposed in at least one of a portion between the first gate electrode and the second gate electrode and a portion between the second gate electrode and the third gate electrode.

47. The image pickup device according to claim 44, wherein, The optical waveguide is disposed so as to be separated from the outer periphery of the light-shielding portion.

48. The image pickup device according to claim 44, wherein, In a plan view, the insulating film completely covers the charge storage unit.

49. The image pickup device according to claim 44, wherein, The light-shielding portion contains tungsten.

50. The image pickup device according to claim 44, wherein, The second gate electrode extends over the charge storage unit.

51. The image pickup device according to claim 44, wherein, The insulating film extends from above the photoelectric conversion unit to above the charge storage unit.

52. The image pickup device according to claim 44, wherein, The insulating film extends over the first gate electrode.

53. The image pickup device according to claim 44, wherein, The insulating film extends over the third gate electrode.

54. The image pickup device according to claim 44, wherein, A part of the optical waveguide extends over the charge storage unit and extends over the drain unit.

55. The image pickup device according to claim 44, wherein, The light-shielding portion extends over the third gate electrode.

56. The image pickup device according to claim 44, further comprising, a lens disposed on the optical waveguide, Among them, in a cross-sectional view, the width of the lens is smaller than the width of the optical waveguide.

57. A camera, characterized in that, Comprising: a lens; and an image pickup device, the image pickup device having a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, each of the plurality of pixels including: a photoelectric conversion unit, a charge storage unit, a floating diffusion unit, a drain unit, a first gate electrode disposed between the photoelectric conversion unit and the drain unit, a second gate electrode disposed between the photoelectric conversion unit and the charge storage unit, a third gate electrode disposed between the charge storage unit and the floating diffusion unit; an optical waveguide disposed on the photoelectric conversion unit, and a light-shielding portion disposed between the plurality of wiring layers and the semiconductor substrate, arranged on at least a part of the charge storage unit and above the second gate electrode, and An insulating film, which includes a portion disposed between the photoelectric conversion unit and the optical waveguide and extending over the light-shielding portion, wherein the refractive index of the insulating film is higher than that of the interlayer insulating film disposed between the plurality of wiring layers, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein the second gate electrode and the third gate electrode are arranged in this order along a third direction parallel to and opposite to the first direction.

58. A camera, characterized in that, Comprising: A lens; And An image pickup device, characterized in that the image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, and each of the plurality of pixels includes: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode, which is disposed between the photoelectric conversion unit and the drain unit, A second gate electrode, which is disposed between the photoelectric conversion unit and the charge storage unit, and A third gate electrode, which is disposed between the charge storage unit and the floating diffusion unit; An optical waveguide, which is disposed above the photoelectric conversion unit, and A light-shielding portion, which is disposed between the plurality of wiring layers and the semiconductor substrate, is arranged above at least a part of the charge storage unit and the second gate electrode, and An insulating film, which includes a portion disposed between the photoelectric conversion unit and the optical waveguide and extending over the light-shielding portion, wherein the refractive index of the insulating film is higher than that of the interlayer insulating film disposed between the plurality of wiring layers, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction.

59. A camera, characterized in that, Comprising: A lens; And An image pickup device, characterized in that the image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, and each of the plurality of pixels includes: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode, which is disposed between the photoelectric conversion unit and the drain unit, A second gate electrode, which is disposed between the photoelectric conversion unit and the charge storage unit, A third gate electrode, which is disposed between the charge storage unit and the floating diffusion unit; A fourth gate electrode of a source follower transistor; An optical waveguide, which is disposed above the photoelectric conversion unit, and A light-shielding portion, the light-shielding portion being provided between the plurality of wiring layers and the semiconductor substrate, being disposed over at least a portion of the charge storage unit and the second gate electrode, and An insulating film, which includes a portion provided between the photoelectric conversion unit and the optical waveguide and extending over the light-shielding portion, wherein the refractive index of the insulating film is higher than the refractive index of the interlayer insulating film provided between the plurality of wiring layers, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein the longitudinal direction of the first gate electrode is orthogonal to the longitudinal direction of the second gate electrode, and wherein the first gate electrode is provided on a first side of the photoelectric conversion unit, and the fourth gate electrode is provided on a second side of the photoelectric conversion unit opposite to the first side.

60. An image pickup device, characterized in that, The image pickup device includes a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, each of the plurality of pixels including: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode, the first gate electrode being provided between the photoelectric conversion unit and the drain unit, A second gate electrode, the second gate electrode being provided between the photoelectric conversion unit and the charge storage unit, and A third gate electrode, the third gate electrode being provided between the charge storage unit and the floating diffusion unit, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, and wherein the second gate electrode and the third gate electrode are arranged in this order along a third direction parallel to and opposite to the first direction, The image pickup device includes: An optical waveguide, the optical waveguide being provided over the photoelectric conversion unit, and A light-shielding portion, the light-shielding portion being provided between the plurality of wiring layers and the semiconductor substrate, being disposed over at least a portion of the charge storage unit and at least a portion of the second gate electrode, and An insulating film, which includes a portion provided between the photoelectric conversion unit and the optical waveguide and extending over the light-shielding portion, wherein an interlayer insulating film made of silicon oxide is provided between the plurality of wiring layers, and wherein the insulating film is a silicon nitride film or a silicon carbide film.

61. An image pickup device, characterized in that, The image pickup device includes a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, each of the plurality of pixels including: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode, the first gate electrode being provided between the photoelectric conversion unit and the drain unit, A second gate electrode, which is disposed between the photoelectric conversion unit and the charge storage unit, and A third gate electrode, which is disposed between the charge storage unit and the floating diffusion unit; An optical waveguide, which is disposed above the photoelectric conversion unit, A light-shielding portion, which is disposed between the plurality of wiring layers and the semiconductor substrate, and is arranged above at least a part of the charge storage unit and the second gate electrode, and An insulating film, which includes a portion disposed between the photoelectric conversion unit and the optical waveguide and extending above the light-shielding portion, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, and wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein an interlayer insulating film made of silicon oxide is disposed between the plurality of wiring layers, and wherein the insulating film is a silicon nitride film or a silicon carbide film.

62. An image pickup device, characterized in that, The image pickup device includes a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, and each of the plurality of pixels includes: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode, which is disposed between the photoelectric conversion unit and the drain unit, A second gate electrode, which is disposed between the photoelectric conversion unit and the charge storage unit, A third gate electrode, which is disposed between the charge storage unit and the floating diffusion unit; A fourth gate electrode of a source follower transistor; An optical waveguide, which is disposed above the photoelectric conversion unit, and A light-shielding portion, which is disposed between the plurality of wiring layers and the semiconductor substrate, and is arranged above at least a part of the charge storage unit and the second gate electrode, and An insulating film, which includes a portion disposed between the photoelectric conversion unit and the optical waveguide and extending above the light-shielding portion, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein a longitudinal direction of the first gate electrode is orthogonal to a longitudinal direction of the second gate electrode, and, wherein the first gate electrode is disposed on a first side of the photoelectric conversion unit, and the fourth gate electrode is disposed on a second side of the photoelectric conversion unit opposite to the first side, wherein an interlayer insulating film made of silicon oxide is disposed between the plurality of wiring layers, and wherein the insulating film is a silicon nitride film or a silicon carbide film.

63. A camera, characterized in that, Including: A lens; And An image pickup device, which includes a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, and each of the plurality of pixels includes: A photoelectric conversion unit, A charge storage unit, Floating diffusion unit, Drain unit, A first gate electrode disposed between the photoelectric conversion unit and the drain unit, A second gate electrode disposed between the photoelectric conversion unit and the charge storage unit, A third gate electrode disposed between the charge storage unit and the floating diffusion unit; An optical waveguide disposed above the photoelectric conversion unit, and A light-shielding portion disposed between the plurality of wiring layers and the semiconductor substrate, disposed above at least a portion of the charge storage unit and the second gate electrode, and An insulating film including a portion disposed between the photoelectric conversion unit and the optical waveguide and extending above the light-shielding portion, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein the second gate electrode and the third gate electrode are arranged in this order along a third direction parallel to and opposite to the first direction, wherein an interlayer insulating film made of silicon oxide is disposed between the plurality of wiring layers, and wherein the insulating film is a silicon nitride film or a silicon carbide film.

64. A camera, characterized in that, Comprising: A lens; And An image pickup device, characterized in that the image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, and each of the plurality of pixels includes: A photoelectric conversion unit, A charge storage unit, A floating diffusion unit, A drain unit, A first gate electrode disposed between the photoelectric conversion unit and the drain unit, A second gate electrode disposed between the photoelectric conversion unit and the charge storage unit, and A third gate electrode disposed between the charge storage unit and the floating diffusion unit; An optical waveguide disposed above the photoelectric conversion unit, and A light-shielding portion disposed between the plurality of wiring layers and the semiconductor substrate, disposed above at least a portion of the charge storage unit and the second gate electrode, and An insulating film including a portion disposed between the photoelectric conversion unit and the optical waveguide and extending above the light-shielding portion, wherein the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein an interlayer insulating film made of silicon oxide is disposed between the plurality of wiring layers, and wherein the insulating film is a silicon nitride film or a silicon carbide film.

65. A camera, characterized in that, Comprising: A lens; And An image pickup device, characterized in that the image pickup device has a semiconductor substrate on which a plurality of pixels are arranged, and a plurality of wiring layers provided on the semiconductor substrate, and each of the plurality of pixels includes: Photoelectric conversion unit, Charge storage unit, Floating diffusion unit, Drain unit, First gate electrode, the first gate electrode is disposed between the photoelectric conversion unit and the drain unit, Second gate electrode, the second gate electrode is disposed between the photoelectric conversion unit and the charge storage unit, Third gate electrode, the third gate electrode is disposed between the charge storage unit and the floating diffusion unit; Fourth gate electrode of the source follower transistor; Optical waveguide, the optical waveguide is disposed above the photoelectric conversion unit, and Light shielding portion, the light shielding portion is disposed between the plurality of wiring layers and the semiconductor substrate, and is disposed above at least a part of the charge storage unit and the second gate electrode, and Insulating film, which includes a portion disposed between the photoelectric conversion unit and the optical waveguide and extending above the light shielding portion, wherein, the photoelectric conversion unit, the first gate electrode, and the drain unit are arranged in this order along a first direction, wherein, the photoelectric conversion unit, the second gate electrode, and the charge storage unit are arranged in this order along a second direction intersecting the first direction, wherein the longitudinal direction of the first gate electrode is orthogonal to the longitudinal direction of the second gate electrode, and, wherein the first gate electrode is disposed on a first side of the photoelectric conversion unit, and the fourth gate electrode is disposed on a second side of the photoelectric conversion unit opposite to the first side, where an interlayer insulating film made of silicon oxide is disposed between the plurality of wiring layers, and the insulating film is a silicon nitride film or a silicon carbide film.

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